Display device

Abstract

To provide a semiconductor device with low wiring resistance, a semiconductor device with high transmittance, or a semiconductor device with a high opening ratio, display device, a light-emitting device and a method for manufacturing the same.SOLUTION: In a transistor 152 of a semiconductor device, a gate electrode 132, a semiconductor layer 112a, and a source electrode or drain electrodes 136, 138 are formed of a material with a light-transmitting property. A conductive layer such as a gate wire 104a or a source wire 126 is formed of a material with lower resistivity than that of the material with a light-transmitting property. The source wire and / or the gate wire provided in a stacking structure of the conductive layer 108a and the conductive layer 110a is formed by stacking the material with a light-transmitting property and the material with lower resistivity than that of the material with a light-transmitting property. Thus, the semiconductor device with low wiring resistance and high transmittance can be provided.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, a display device, a light emitting device, or a method for manufacturing the same. A semiconductor device having a circuit formed of a thin film transistor using an oxide semiconductor film in a panel formation region. The present invention relates to a body device and a method for making the same. [Background technology]

[0002] Currently, amorphous silicon is used as a switching element in display devices such as liquid crystal displays. Thin-film transistors (TFTs) that use a silicon layer such as a capacitor as a channel layer are widely used. Thin-film transistors using amorphous silicon have low field-effect mobility, but This has the advantage that it can accommodate the increase in the area of glass substrates.

[0003] Recently, thin-film transistors have been fabricated using metal oxides that exhibit semiconducting properties, and electronic devices have been developed. For example, among metal oxides, the technology of applying it to devices and optical devices is attracting attention. It is known that tin oxide, indium oxide, zinc oxide, etc. exhibit semiconductor properties. A thin film transistor in which a transparent semiconductor layer made of such a metal oxide is used as a channel forming region. A transistor is disclosed in Patent Document 1.

[0004] In addition, a channel layer of the transistor is formed using a light-transmitting oxide semiconductor layer. The gate electrode, source electrode, and drain electrode are also formed of a transparent conductive film having light transmitting properties. Therefore, techniques for improving the aperture ratio are being studied (Patent Document 2).

[0005] By improving the aperture ratio, the light utilization efficiency is improved, and the power consumption and size of the display device are reduced. On the other hand, from the viewpoint of larger display devices and application to mobile devices, Therefore, there is a demand for further reduction in power consumption along with improvement in aperture ratio.

[0006] As a method for wiring metal auxiliary wiring to the transparent electrodes of the electro-optical element, In either case, the metal auxiliary wiring is wired so that it overlaps with the transparent electrode to provide electrical continuity with the transparent electrode. It is known that such a method is used (see, for example, Patent Document 3).

[0007] The additional capacitance electrodes provided on the active matrix substrate are made of transparent material such as ITO or SnO2. The electrode is made of a conductive film, and in order to reduce the electrical resistance of the electrode for the additional capacitance, the electrode is made of a metal film. A configuration is known in which an auxiliary wiring is provided in contact with an electrode for additional capacitance (see, for example, Patent Document 4). ).

[0008] In a field-effect transistor using an amorphous oxide semiconductor film, The source and drain electrodes were made of indium tin oxide (ITO), indium Transparent electrodes such as zinc oxide, ZnO, SnO2, and Al, Ag, Cr, Ni, Mo, Au Metal electrodes such as Ti, Ta, etc., or metal electrodes of alloys containing these metals can be used. However, it is known that stacking two or more layers of them can reduce contact resistance and improve interface strength. (See, for example, Patent Document 5).

[0009] In addition, the source electrode, drain electrode and The materials for the gate electrode and the auxiliary capacitance electrode are indium (In), aluminum (Al), and gold ( Metals such as Au, silver (Ag), indium oxide (In2O3), and tin oxide (SnO2) , zinc oxide (ZnO), cadmium oxide (CdO), cadmium indium oxide (CdI n2O4), cadmium tin oxide (Cd2SnO4), zinc tin oxide (Zn2SnO4) and other oxide materials can be used, and the materials of the gate electrode, source electrode, and drain electrode are , all of which may be the same or different (see, for example, Patent Documents 6 and 7 ).

Prior Art Documents

Patent Documents

[0010]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Summary of the Invention

Problems to be Solved by the Invention

[0011] One aspect of the present invention aims to provide a semiconductor device with low wiring resistance. Or, one aspect of the present invention aims to provide a semiconductor device with high transmittance. Or, one aspect of the present invention aims to provide a semiconductor device with a high aperture ratio. Or, one aspect of the present invention aims to provide a semiconductor device with low power consumption. Or, one The object is to provide a semiconductor device that supplies an accurate voltage. Or, one aspect of the present invention is to provide a semiconductor device with reduced voltage drop. Or, one aspect of the present invention is to provide a semiconductor device with improved display quality. Or, one aspect of the present invention is to provide a semiconductor device with reduced contact resistance. Or, one aspect of the present invention is to provide a semiconductor device with reduced flicker. Or, one aspect of the present invention is to provide a semiconductor device with a small off-current. Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention is not required to solve all of the above problems.

Means for Solving the Problems

[0012] To solve the above problems, in one aspect of the present invention, the gate electrode, the semiconductor layer, the source electrode, or the drain electrode is formed using a light-transmissive material, and wirings such as the gate wiring or the source wiring are provided with a material having a lower resistivity than the light-transmissive material.

[0013] Also, in one aspect of the present invention, a first electrode provided with a first conductive layer having light-transmittance, a first wiring provided with a laminated structure of a second conductive layer that is electrically connected to the first electrode and has a lower resistance than the first conductive layer, an insulating layer provided on the first electrode and the first wiring, a second electrode provided on the insulating layer and provided with a third conductive layer having light-transmittance, a second wiring provided with a laminated structure of a fourth conductive layer that is electrically connected to the second electrode and has a lower resistance than the third conductive layer, and a third wiring provided with a fifth conductive layer having light-transmittance An electrode, provided so as to overlap with the first electrode on an insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided.

[0014] Also, one aspect of the present invention is a first electrode provided with a first conductive layer having translucency, and a first electrode electrically connected to the first wiring provided in a laminated structure with a second conductive layer having a lower resistance than the first conductive layer and the first conductive layer a second wiring provided with a third conductive layer having translucency, an insulating layer provided on the first electrode, the first wiring, and the second wiring, and provided on the insulating layer a second electrode provided with a fourth conductive layer having translucency, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer and electrically connected to the second electrode, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. a second electrode provided with a fourth conductive layer having translucency, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer and electrically connected to the second electrode, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. connected, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. connected, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. connected, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. connected, a third wiring provided in a laminated structure with a fifth conductive layer having a lower resistance than the fourth conductive layer, a third electrode provided with a sixth conductive layer having translucency, a seventh conductive layer having translucency provided on the second wiring via an insulating layer, and provided so as to overlap with the first electrode on the insulating layer, and a semiconductor device having a semiconductor layer provided on the second electrode and the third electrode are provided. electrode are provided.

[0015] Note that switches of various forms can be used. Examples include electrical switches and mechanical switches. That is, any device that can control the flow of current is acceptable and is not limited to a specific one. For example, as the switch, a transistor (e.g., bipolar transistor, MOS transistor, etc.), a diode (e.g., PN diode, PIN diode, Schottky diode, MIM (Metal Insulator Metal) diode, MIS (Metal Insulator Semicond ductor) diode, etc.) can be used. It is possible to use (e.g., a diode, a diode-connected transistor, etc.). Or, a logic circuit combining these can be used as a switch. Further, it is possible to use a mechanical switch such as a digital micromirror device (DMD).

[0016] As an example of a mechanical switch, there is a switch using MEMS (Micro-Electro-Mechanical System) technology, such as a digital micromirror device (DMD). That switch has an electrode that can be mechanically moved, and by moving that electrode, it operates by controlling conduction and non-conduction. When using a transistor as a switch, since the transistor operates simply as a switch,

[0017] the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress the off-current, it is desirable to use a transistor with a lower off-current polarity. Examples of transistors with a low off-current include transistors having an LDD region and transistors having a multi-gate structure. Or, when the potential of the source terminal of the transistor operating as a switch operates at a value close to the potential of the low-potential side power supply (Vss, GND, 0V, etc.), it is desirable to use an N-channel type transistor. Conversely, when the potential of the source terminal operates at a value close to the potential of the high-potential side power supply (Vdd, etc.), it is desirable to use a P-channel type transistor. This is because, in an N-channel type transistor, when the source terminal operates at a value close to the potential of the low-potential side power supply, and in a P-channel type transistor, when the source terminal operates at a value close to the potential of the high-potential side power supply, the absolute value of the voltage between the gate and the source can be made large, so that more accurate operation can be performed as a switch. Furthermore, ​​Since the transistor is less likely to operate in a source follower configuration, the magnitude of the output voltage is less likely to decrease.

[0018] Note that both an N-channel transistor and a P-channel transistor may be used to form a CMOS type switch. When a CMOS type switch is used, current flows when either the P-channel transistor or the N-channel transistor is conducting, making it easier to function as a switch. For example, the switch can appropriately output a voltage whether the input signal voltage is high or low. Furthermore, the voltage amplitude value of the signal for turning the switch on or off can be reduced, thereby also reducing power consumption.

[0019] When using a transistor as a switch, the switch has an input terminal (either the source terminal or the drain terminal), an output terminal (the other of the source terminal or the drain terminal), and a terminal for controlling conduction (the gate terminal). On the other hand, when using a diode as a switch, the switch may not have a terminal for controlling conduction. Therefore, using a diode as a switch can reduce the wiring for controlling the terminals more than using a transistor.

[0020] When it is explicitly stated that A and B are connected, it shall include the case where A and B are electrically connected, the case where A and B are functionally connected, and the case where A and B are directly connected. Here, A and B are objects (e.g., devices, elements, circuits ​​, wiring, electrodes, terminals, conductive films, layers, etc.). Therefore, a predetermined connection relationship, For example, it is not limited to the connection relationship shown in the figure or the text, and it shall include those other than the connection relationship shown in the figure or the text.

[0021] For example, when A and B are electrically connected, an element that enables the electrical connection between A and B (for example, a switch, transistor, capacitor element, inductor, resistor element, diode, etc.) may be connected between A and B by one or more. Alternatively, when A and B are functionally connected, a circuit that enables the functional connection between A and B (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), a signal conversion circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), a potential level conversion circuit (a power supply circuit (boost circuit, buck circuit, etc.), a level shifter circuit that changes the potential level of a signal, etc.), a voltage source, a current source, a switching circuit, an amplification circuit (a circuit that can increase the signal amplitude or current amount, etc., an operational amplifier, a differential amplification circuit, a source follower circuit, a buffer circuit, etc.), a signal generation circuit, a memory circuit, a control circuit, etc.) may be connected between A and B by one or more. For example, even if there is another circuit between A and B, when the signal output from A is transmitted to B, A and B shall be considered to be functionally connected.

[0022] In addition, when it is explicitly described that A and B are electrically connected, it includes the case where A and B are electrically connected (that is, when there is another element or another circuit between A and B), the case where A and B are functionally connected (that is, when there is another circuit between A and B and they are functionally connected), and the case where A and B are directly connected. ​​​​​​​​​​​​​​​ including the case where they are connected without interposing another element or another circuit between A and B That is, when it is explicitly described that they are electrically connected, it is considered the same as the case where it is only explicitly described that they are connected as such

[0023] Note that a display element, a display device having the display element, a light-emitting element, and a light-emitting device having the light-emitting element can use various forms and have various elements. For example , as the display element, the display device, the light-emitting element, or the light-emitting device, an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (a transistor that emits light according to current ), an electron-emitting element, a liquid crystal element, electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display (PDP), a digital micromirror device (DMD), a piezoelectric ceramic display, a carbon nanotube, etc , and can have a display medium in which contrast, luminance, reflectance, transmittance, etc. change due to electromagnetic action . Note that as a display device using an EL element, there is an EL display , as a display device using an electron-emitting element, there is a field emission display (FED) or a SED type flat panel display (SED: Surface-conduction Electron-emitter Disply), etc. As a display device using a liquid crystal element , there is a liquid crystal display (transmissive liquid crystal display, transflective liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection liquid crystal display), electronic ink, or an electrophoretic element . Note that as a display device using an EL element, there is an EL display , as a display device using an electron-emitting element, there is a field emission display (FED) or a SED type flat panel display (SED: Surface-conduction Electron-emitter Disply), etc. As a display device using a liquid crystal element , there is a liquid crystal display (transmissive liquid crystal display, transflective liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection liquid crystal display), electronic ink, or an electrophoretic element such as a liquid crystal display (transmissive liquid crystal display, transflective liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection liquid crystal display), electronic ink, or an electrophoretic element . As a display device using an electrokinetic element, there is electronic paper.

[0024] Note that an EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. Note that as the EL layer, those using light emission (fluorescence) from singlet excitons, those using light emission (phosphorescence) from triplet excitons, those including both those using light emission (fluorescence) from singlet excitons and those using light emission (phosphorescence) from triplet excitons, those formed of organic substances, those formed of inorganic substances, those including both those formed of organic substances and those formed of inorganic substances, those having a polymer material, a low-molecular material, those including both a polymer material and a low-molecular material, etc. can be included. However, it is not limited to this, and various EL elements can be included. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal.

[0025] Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included. Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. Note that an electron-emitting element is an element that concentrates a high electric field on the cathode to extract electrons. For example, as the electron-emitting element, a spin type, a carbon nanotube (CNT) type, a MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, a MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, a MOS type, a silicon type, a thin-film diode type, a diamond type, a surface conduction emission type SCD type, a thin-film type such as a metal-insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SCE) type, etc. can be included. However, it is not limited to this, and various electron-emitting elements can be included.

[0026] Note that a liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal. It is composed of a pair of electrodes and liquid crystal. The optical modulation effect of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). Note that as the liquid crystal element, nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain type liquid crystal, side chain type high molecular weight liquid crystal, plasma address liquid crystal (PALC), banana type liquid crystal, TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and high molecular weight liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain type liquid crystal, side chain type high molecular weight liquid crystal, plasma address liquid crystal (PALC), banana type liquid crystal, TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and FFS (Fringe Field Switching) mode, MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and MVA (Multi-domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and PVA (Patterned Vertical Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and ASM (Axially Symmetric aligned Microcell) mode, OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and OCB (Optical Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and ECB (Electrically Controlled Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and AFLC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and PDLC (Polymer Dispersed Liquid Crystal) mode, guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and guest-host mode, blue phase mode, etc. can be used. However, it is not limited to this, and the liquid crystal element and A variety of different types of filters can be used.

[0027] In addition, electronic paper is displayed by molecules (optical anisotropy, dye molecule orientation, etc.). (electrophoresis, particle migration, particle rotation, phase change, etc.), Those that are displayed by the movement of one end of the film, and those that are displayed by coloring / phase changes of molecules. Some are displayed by molecular light absorption, while others are displayed by spontaneous light emission caused by the combination of electrons and holes. For example, electronic paper is a type of microcapsule electrophoretic display. , horizontally moving electrophoresis, vertically moving electrophoresis, spherical twist ball, magnetic twist ball , cylindrical twist ball method, charged toner, electronic liquid powder (registered trademark of Bridgestone Corporation) ), magnetophoretic type, magnetic heat sensitive type, electrowetting, light scattering (transparent, opaque), cores Cholesteric Liquid Crystal / Photoconductive Layer, Cholesteric Liquid Crystal, Bistable Nematic Liquid Crystal, Ferroelectric Liquid Crystal , dichroic dye / liquid crystal dispersion type, movable film, leuco dye coloring / decoloring, photochromic, electro It is possible to use chromic, electrodeposition, flexible organic electroluminescence, etc. However, the present invention is not limited to this, and various types of electronic paper can be used. Here, by using microcapsule electrophoresis, the disadvantages of the electrophoretic method are eliminated. It can solve the aggregation and precipitation of electrophoretic particles. Electronic powder has high speed response and high reflectivity. It has advantages such as high efficiency, wide viewing angle, low power consumption, and memory properties.

[0028] A plasma display is made up of a substrate on which electrodes are formed, and a display panel on which electrodes and minute grooves are formed. The substrate is placed opposite to a substrate having a groove formed therein and a phosphor layer formed therein at a narrow interval, and a rare gas is sealed in the substrate. It has a structure. Alternatively, the plasma display may have a structure in which the plasma tube is sandwiched between frame-shaped electrodes. The plasma tube is a glass tube in which a discharge gas, phosphors for each of RGB, etc. are sealed. By applying a voltage between the electrodes to generate ultraviolet rays and causing the phosphors to emit light, display can be performed. As the plasma display, a DC type PDP or an AC type PDP may be used. Here, as the plasma display panel, ASW (Address While Sustain) drive, ADS (Address Display Separated) drive that divides the sub-frame into a reset period, an address period, and a sustain period, CL EAR (HIGH-CONTRAST&LOW ENERGY ADDRESS&RED UCTION OF FALSE CONTOUR SEQUENCE) drive, ALIS (Alternate Lighting of Surfaces) method, TERES (Techbology of Reciprocal Susfainer) drive, etc. can be used. However, it is not limited to this, and various types can be used as the plasma display. Note that as the light source for a display device that requires a light source, for example, a liquid crystal display (transmissive liquid crystal display , transflective liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection type liquid crystal display), a display device using a grating light valve (GLV), a display device using a digital micromirror device (DMD), etc., as the light source, electroluminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. can be used. (Alternate Lighting of Surfaces) method, TERES (Techbology of Reciprocal Susfainer) drive, etc. can be used. However, it is not limited to this, and various types can be used as the plasma display. (Techbology of Reciprocal Susfainer) drive, etc. can be used. However, it is not limited to this, and various types can be used as the plasma display. However, it is not limited to this, and various types can be used as the plasma display.

[0029] Note that as the light source for a display device that requires a light source, for example, a liquid crystal display (transmissive liquid crystal display , transflective liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection type liquid crystal display), a display device using a grating light valve (GLV), a display device using a digital micromirror device (DMD), etc., as the light source, electroluminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. can be used. roluminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. can be used.​ It is possible. However, it is not limited to this, and various things can be used as the light source. .

[0030] In addition, various forms of transistors can be used as the transistor. Therefore, there is no limitation on the type of transistor to be used. For example, amorphous silicon, polycrystalline silicon, micro crystal (also called microcrystal, nanocrystal, semi-amorphous) silicon, etc. A thin film transistor (TFT) having a non-single crystal semiconductor film typified by can be used. When using a TFT, there are various merits. For example, since it can be manufactured at a lower temperature than in the case of single crystal silicon, it is possible to reduce the manufacturing cost or reduce the size of the manufacturing apparatus. Since the manufacturing apparatus can be made large, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured at the same time, it can be manufactured at low cost. Furthermore, since the manufacturing temperature is low, a substrate with weak heat resistance can be used. Therefore, a transistor can be manufactured on a substrate having translucency. And, using the transistor on the substrate having translucency, the transmission of light in the display element can be controlled. Alternatively, since the film thickness of the transistor is thin, a part of the film constituting the transistor can transmit light. Therefore, the aperture ratio can be improved.

[0031]

[0031] In addition, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, and it becomes possible to manufacture a transistor with good electrical characteristics. As a result, a gate driver circuit (scanning line driving circuit), a source driver circuit (signal line driving circuit), a signal processing circuit (such as a signal generation circuit, a gamma correction circuit, a DA conversion circuit), etc. can be integrally formed on the substrate. It can be achieved.

[0032] In addition, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, and it becomes possible to manufacture transistors with good electrical characteristics. At this time, it is also possible to improve the crystallinity only by applying heat treatment without performing laser irradiation. As a result, a part of the source driver circuit (such as an analog switch) and the gate driver circuit (scanning line driving circuit) can be integrally formed on the substrate. Furthermore, when laser irradiation is not performed for crystallization, unevenness in the crystallinity of silicon can be suppressed. Therefore, an image with improved image quality can be displayed.

[0033] However, it is possible to manufacture polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

[0034] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline, etc. is desirably performed for the entire panel, but is not limited thereto. The crystallinity of silicon may be improved only in a part of the region of the panel. Selectively improving the crystallinity can be achieved by selectively irradiating laser light, etc. For example, laser light may be irradiated only on the peripheral circuit region which is a region other than the pixels. Or, laser light may be irradiated only on regions such as the gate driver circuit and the source driver circuit. Or, laser light may be irradiated only on a part of the source driver circuit (for example, an analog switch) region. As a result, it is possible to improve the crystallization of silicon only in the regions where it is necessary to operate the circuit at high speed. Since the pixel region has little need to operate at high speed, even if the crystallinity is not improved, there is no problem. ​ The pixel circuit can operate without problems. Since the area for improving crystallinity is small, the manufacturing process can be shortened, throughput can be improved, and manufacturing costs can be reduced. Since it can be manufactured with a small number of required manufacturing apparatuses, manufacturing costs can be reduced.

[0035] Alternatively, transistors can be formed using a semiconductor substrate, an SOI substrate, or the like. By these, transistors with little variation in characteristics, size, shape, etc., high current supply capacity, and small size can be manufactured. Using these transistors, low power consumption of the circuit or high integration of the circuit can be achieved.

[0036] Alternatively, transistors having a compound semiconductor or an oxide semiconductor such as ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, AlZnSnO (AZTO), etc., and further, thin film transistors obtained by thinning these compound semiconductors or oxide semiconductors can be used. By these, the manufacturing temperature can be lowered, and for example, it becomes possible to manufacture transistors at room temperature. As a result, transistors can be directly formed on a substrate with low heat resistance, for example, a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors are not only used for the channel portion of the transistor, but can also be used for other applications. For example, these compound semiconductors or oxide semiconductors can be used as resistive elements, pixel electrodes, and electrodes having translucency. Furthermore, since they can be film-formed or formed simultaneously with the transistor, costs can be reduced.

[0037] ​​​​Alternatively, a transistor formed by inkjet or printing method can be used. These allow fabrication at room temperature, in a low vacuum, or on a large substrate. Since it is possible to manufacture without using a mask (reticle), The layout can be easily changed. Furthermore, since there is no need to use resist, The cost of materials is reduced and the number of processes can be reduced. Furthermore, the film is applied only to the necessary parts, so the entire This method is less wasteful and less costly than the method of forming a film on a surface and then etching it. can.

[0038] Alternatively, transistors having organic semiconductors or carbon nanotubes may be used. These features make it possible to form transistors on a flexible substrate. A semiconductor device using such a substrate can be made resistant to shock.

[0039] Furthermore, transistors of various structures can be used. For example, MOS transistors Use of transistors such as junction transistors and bipolar transistors as transistors By using MOS transistors, the size of the transistors can be reduced. Therefore, multiple transistors can be mounted. By using a transistor, a large current can be passed through. This allows the circuit to operate at high speed. It can be made to work.

[0040] In addition, MOS transistors, bipolar transistors, etc. can be mixed and formed on a single substrate. This can achieve low power consumption, compact size, high speed operation, etc. .

[0041] In addition, various transistors can be used.

[0042] Note that the transistor can be formed using various substrates. The type of substrate is not limited to a specific one. Examples of such substrates include single-crystal substrates (e.g., silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates having stainless steel foils, tungsten substrates, substrates having tungsten foils, flexible substrates, etc. An example of a glass substrate includes barium borosilicate glass, aluminoborosilicate glass, etc. An example of a flexible substrate includes plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), or synthetic resins having flexibility such as acrylic. In addition, there are laminated films (such as polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), papers containing fibrous materials, base films (such as polyester, polyamide, polyimide, inorganic vapor deposition films, papers, etc.). Alternatively, a transistor can be formed using a certain substrate, and then the transistor can be transferred to another substrate and arranged on the other substrate. Examples of substrates to which the transistor is transferred include single-crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (such as silk, cotton, linen), synthetic fibers (such as nylon, polyurethane, polyester), or regenerated fibers (such as acetate, cupra, rayon, regenerated polyester)), leather substrates, rubber substrates, stainless steel ones. · A still substrate, a substrate having a stainless-steel foil, etc. can be used. Or, the skin (epidermis, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Also, a transistor may be formed using a certain substrate, and then the substrate may be polished to make it thinner. As the substrate to be polished, a single-crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a stainless-steel substrate, a substrate having a stainless-steel foil, etc. can be used. By using these substrates, it is possible to form a transistor with good characteristics, form a transistor with low power consumption, manufacture a device that is difficult to break, impart heat resistance, reduce weight, or make it thinner.

[0043] Note that the configuration of the transistor can take various forms and is not limited to a specific configuration. For example, a multi-gate structure with two or more gate electrodes can be applied. When a multi-gate structure is used, since the channel regions are connected in series, a configuration in which a plurality of transistors are connected in series is formed. With the multi-gate structure, it is possible to reduce the off-current and improve the breakdown voltage (improve the reliability) of the transistor. Alternatively, with the multi-gate structure, when operating in the saturation region, even if the drain-source voltage changes, the drain-source current hardly changes, and the slope of the voltage-current characteristics can be made flat. By using the characteristic that the slope of the voltage-current characteristics is flat, an ideal current source circuit and an active load having a very high resistance value can be realized. As a result, a differential circuit and a current mirror circuit with good characteristics can be

[0044] realized. As another example, a structure in which gate electrodes are arranged above and below the channel By adopting a structure in which gate electrodes are arranged above and below the channel, the channel region can be increased, and thus an increase in the current value can be achieved. Alternatively, by adopting a structure in which gate electrodes are arranged above and below the channel it becomes easier to form a depletion layer, so that the S value can be improved. Note that by adopting a configuration in which gate electrodes are arranged above and below the channel a configuration is obtained in which a plurality of transistors are connected in parallel.

[0045] Structures in which a gate electrode is arranged above the channel region, structures in which a gate electrode is arranged below the channel region, a positive stagger structure, a reverse stagger structure, a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or a configuration in which the channel regions are connected in series can also be applied. Furthermore, a structure in which a source electrode or a drain electrode overlaps with the channel region (or a part thereof) can also be applied. By adopting a structure in which a source electrode or a drain electrode overlaps with the channel region (or a part thereof), it is possible to prevent the operating state from becoming unstable due to the accumulation of charges in a part of the channel region. Alternatively, a structure provided with an LDD region can be applied. By providing an LDD region, it is possible to reduce the off-current or improve the breakdown voltage (improve the reliability) of the transistor. Alternatively, by providing an LDD region, even when the drain-source voltage changes during operation in the saturation region, the drain-source current does not change much, and the slope of the voltage-current characteristics can be made flat. Note that various types of transistors can be used and they can be formed using various substrates. Therefore, all of the circuits necessary to realize a predetermined function are the same

[0046] Note that various types of transistors can be used, and they can be formed using various substrates. Therefore, all of the circuits necessary to realize a predetermined function are the same substrate. ​​​​​It is also possible to form it on a substrate. For example, all of the circuits necessary to realize a predetermined function can be formed using various substrates such as a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. By forming all of the circuits necessary to realize a predetermined function using the same substrate, cost reduction due to a reduction in the number of parts, or improvement in reliability due to a reduction in the number of connection points with circuit components can be achieved. Alternatively, it is also possible that a part of the circuits necessary to realize a predetermined function is formed on one substrate, and another part of the circuits necessary to realize a predetermined function is formed on another substrate. That is, it is not necessary for all of the circuits necessary to realize a predetermined function to be formed using the same substrate. For example, a part of the circuits necessary to realize a predetermined function is formed by transistors on a glass substrate, and another part of the circuits necessary to realize a predetermined function is formed on a single crystal substrate and is composed of transistors formed using the single crystal substrate. The IC chip can be connected to the glass substrate by COG (Chip On Glass), and the IC chip can be arranged on the glass substrate. Alternatively, the IC chip can be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed circuit board. In this way, by forming a part of the circuits on the same substrate, cost reduction due to a reduction in the number of parts, or improvement in reliability due to a reduction in the number of connection points with circuit components can be achieved. Alternatively, since the circuits in the parts with a high drive voltage and a high drive frequency consume a large amount of power, the circuits in such parts are not formed on the same substrate. Instead, for example, the circuits in such parts are formed on a single crystal substrate, and the circuits formed by those circuits are not formed on the same substrate. Instead, for example, a part of the circuits necessary to realize a predetermined function is formed by transistors on a glass substrate, and another part of the circuits necessary to realize a predetermined function is formed on a single crystal substrate. The IC chip composed of transistors formed using the single crystal substrate is connected to the glass substrate by COG (Chip On Glass), and the IC chip is arranged on the glass substrate. Alternatively, the IC chip can be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed circuit board. In this way, by forming a part of the circuits on the same substrate, cost reduction due to a reduction in the number of parts, or improvement in reliability due to a reduction in the number of connection points with circuit components can be achieved. Alternatively, since the circuits in the parts with a high drive voltage and a high drive frequency consume a large amount of power, the circuits in such parts are not formed on the same substrate. Instead, for example, the circuits in such parts are formed on a single crystal substrate, and the circuits formed by those circuits are used to configure the IC chip, and the IC chip is connected to the glass substrate by COG (Chip On Glass), and the IC chip is arranged on the glass substrate. Alternatively, the IC chip can be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed circuit board. In this way, by forming a part of the circuits on the same substrate, cost reduction due to a reduction in the number of parts, or improvement in reliability due to a reduction in the number of connection points with circuit components can be achieved. Alternatively, since the circuits in the parts with a high drive voltage and a high drive frequency consume a large amount of power, the circuits in such parts are not formed on the same substrate. Instead, for example, the circuits in such parts are formed on a single crystal substrate, and the circuits formed by those circuits are used to configure the IC chip, and the IC chip is connected to the glass substrate by COG (Chip On Glass), and the IC chip is arranged on the glass substrate. In this way, by forming a part of the circuits on the same substrate, cost reduction due to a reduction in the number of parts, or improvement in reliability due to a reduction in the number of connection points with circuit components can be achieved. Alternatively, since the circuits in the parts with a high drive voltage and a high drive frequency consume a large amount of power, the circuits in such parts are not formed on the same substrate. Instead, for example, the circuits in such parts are formed on a single crystal substrate, and the circuits formed by those circuits are used to configure the IC chip, and the IC chip is connected to the glass substrate by COG (Chip On Glass), and the IC chip is arranged on the glass substrate. Alternatively, since the circuits in the parts with a high drive voltage and a high drive frequency consume a large amount of power, the circuits in such parts are not formed on the same substrate. Instead, for example, the circuits in such parts are formed on a single crystal substrate, and the circuits formed by those circuits are used to configure the IC chip, and the IC chip is connected to the glass substrate by COG (Chip On Glass), and the IC chip is arranged on the glass substrate. If an IC chip that has been made is used, an increase in power consumption can be prevented.

[0047] Note that one pixel indicates one element that can control brightness. Therefore, as an example one pixel indicates one color element, and the brightness is expressed by one such color element. Therefore, in the case of a color display device composed of color elements of R (red), G (green), and B (blue) at that time the minimum unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel shall be. Note that the color elements are not limited to three colors, and three or more colors may be used, or colors other than RGB may be used. For example, it is also possible to add white and use RGBW (W is white). Or to RGB, for example, one or more colors such as yellow, cyan, magenta, emerald green, and vermilion can be added. Or, for example, a color similar to at least one color in RGB can be added to RGB. For example, it may be R, G, B1, B2 B1 and B2 are both blue, but have slightly different wavelengths. Similarly it is also possible to use R1, R2, G, B. By using such color elements, a display closer to the real thing can be performed. By using such color elements, the power consumption can be reduced. As another example, when controlling the brightness using a plurality of regions for one color element it is also possible to regard one such region as one pixel. Therefore, as an example, when performing area gradation or when having sub-pixels, for one color element, there are a plurality of regions for controlling the brightness, and the gradation is expressed as a whole, but it is also possible to regard one of the regions for controlling the brightness as one pixel. Therefore, in that case, for one color element, one pixel is one region for controlling the brightness. The element will be composed of a plurality of pixels. Alternatively, even if there are a plurality of regions for controlling brightness within one color element, they may be grouped together and regarded as one pixel for one color element. Thus, in that case, one color element will be composed of one pixel. Alternatively, when controlling brightness for one color element using a plurality of regions, the size of the region contributing to the display may vary depending on the pixel. Alternatively, in the case of a plurality of regions for controlling brightness for one color element, the signals supplied to each may be made slightly different so as to widen the viewing angle. That is, for one color element, it is also possible that the potentials of the pixel electrodes each owned by the plurality of regions are different from each other. As a result, the voltages applied to the liquid crystal molecules will be different for each pixel electrode. Therefore, the viewing angle can be widened.

[0048] Note that when explicitly described as one pixel (for three colors), it is assumed to be the case of considering three pixels of R, G, and B as one pixel. When explicitly described as one pixel (for one color), it is assumed to be the case of considering a plurality of regions for one color element together as one pixel.

[0049] Note that the pixels may be arranged (arrayed) in a matrix. Here, when the pixels are arranged (arrayed) in a matrix, it includes the cases where the pixels are arranged side by side in a straight line in the vertical or horizontal direction, or arranged on a zigzag line. Therefore, for example, when performing full-color display with three color elements (e.g., RGB), it includes the cases where they are arranged in stripes, or the dots of the three color elements are arranged in a delta pattern. Furthermore, This includes the case where it is arranged in a Bayer pattern. Note that the size of the display area may be different for each dot of the color element. Thereby, it is possible to achieve low power consumption or a longer lifespan of the display element.

[0050] Note that an active matrix method having an active element in a pixel or a passive matrix method not having an active element in a pixel can be used.

[0051] In the active matrix method, as the active element (active element, non-linear element), not only a transistor but also various active elements (active elements, non-linear elements) can be used. For example, it is also possible to use MIM (Metal Insulator Metal), TFD ( Thin Film Diode), etc. Since these elements have few manufacturing steps, it is possible to reduce the manufacturing cost or improve the yield. Furthermore, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

[0052] Note that as something other than the active matrix method, it is also possible to use a passive matrix type that does not use an active element (active element, non-linear element). Since it does not use an active element (active element, non-linear element), there are few manufacturing steps, and it is possible to reduce the manufacturing cost or improve the yield. Since it does not use an active element (active element, non-linear element), the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

[0053] Note that a transistor includes at least three terminals including a gate, a drain, and a source. is an element having a channel region between a drain region and a source region, and current can flow through the drain region, the channel region, and the source region. Here, since the source and the drain change depending on the structure and operating conditions of the transistor, etc., it is difficult to limit which is the source or the drain. Therefore, there are cases where the regions that function as the source and the drain are not called the source or the drain. In that case, as an example, they may be referred to as the first terminal and the second terminal, respectively. Alternatively, they may be referred to as the first electrode and the second electrode, respectively. Alternatively, there are cases where they are referred to as the first region and the second region.

[0054] Note that a transistor may be an element having at least three terminals including a base, an emitter, and a collector. Similarly in this case, the emitter and the collector may be referred to as the first terminal, the second terminal, etc.

[0055] Note that the gate refers to the entirety including the gate electrode and the gate wiring (also referred to as the gate line, gate signal line, scanning line, scanning signal line, etc.), or a part of them. The gate electrode refers to the conductive film of the part that overlaps with the semiconductor forming the channel region via the gate insulating film. Note that a part of the gate electrode may overlap with the LDD (Lightly Dop ed Drain) region or the source region (or drain region) via the gate insulating film. The gate wiring refers to the wiring for connecting between the gate electrodes of each transistor, the wiring for connecting between the gate electrodes of each pixel, or the wiring for connecting the gate electrode to another wiring.

[0056] ​​​​​​​ However, there are also portions (regions, conductive films, wirings, etc.) that function as both a gate electrode and a gate wiring. Such portions (regions, conductive films, wirings, etc.) may be referred to as a gate electrode or a gate wiring. That is, there are regions where the gate electrode and the gate wiring cannot be clearly distinguished. For example, when a part of an extended gate wiring overlaps with a channel region, such a portion (region, conductive film, wiring, etc.) functions as a gate wiring but also functions as a gate electrode. Therefore, such a portion (region, conductive film, wiring, etc.) may be referred to as a gate electrode or a gate wiring.

[0057] In addition, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode and connected by forming the same island as the gate electrode may also be referred to as a gate electrode. Similarly, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate wiring and connected by forming the same island as the gate wiring may also be referred to as a gate wiring. Such portions (regions, conductive films, wirings, etc.) may not overlap with the channel region in a strict sense or may not have a function of connecting to another gate electrode. However, due to specifications during manufacturing, etc., there are portions (regions, conductive films, wirings, etc.) formed of the same material as the gate electrode or the gate wiring and connected by forming the same island as the gate electrode or the gate wiring. Therefore, such portions (regions, conductive films, wirings, etc.) may also be referred to as a gate electrode or a gate wiring.

[0058] ​​​​​​​​​​​​​​​​Incidentally, for example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected by a conductive film formed of the same material as the gate electrode. Such a portion (region, conductive film, wiring, etc.) is a portion (region, conductive film, wiring, etc.) for connecting the gate electrode and the gate electrode, so it may be called a gate wiring. However, since a multi-gate transistor can be regarded as a single transistor, it may also be called a gate electrode. That is, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode or the gate wiring and forming and connecting the same island (island) as the gate electrode or the gate wiring may be called a gate electrode or a gate wiring. Further, for example, a conductive film of a portion connecting the gate electrode and the gate wiring, which is formed of a material different from the gate electrode or the gate wiring, may also be called a gate electrode or a gate wiring. Incidentally, the gate terminal refers to a portion (region, conductive film, wiring, etc.) of the gate electrode or a portion (region, conductive film, wiring, etc.) electrically connected to the gate electrode, and refers to a part of it. Incidentally, when a certain wiring is called a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, etc., the transistor gate may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, the scanning signal line may mean a wiring formed in the same layer as the transistor gate, a wiring formed of the same material as the transistor gate, or a wiring formed simultaneously with the transistor gate. Examples include a wiring for a holding capacitor, a power supply line, a reference potential supply wiring, etc.

[0059] Incidentally, the gate terminal refers to a portion (region, conductive film, wiring, etc.) of the gate electrode or a portion (region, conductive film, wiring, etc.) electrically connected to the gate electrode, and refers to a part of it.

[0060] Incidentally, when a certain wiring is called a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, etc., the transistor gate may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, the scanning signal line may mean a wiring formed in the same layer as the transistor gate, a wiring formed of the same material as the transistor gate, or a wiring formed simultaneously with the transistor gate. Examples include a wiring for a holding capacitor, a power supply line, a reference potential supply wiring, etc. ​​​​​​​

[0061] The source includes the source region, the source electrode, and the source wiring (source line, source signal line, de- This refers to the whole or a part of the data line, including the data signal line, etc. The source region is formed by doping P-type impurities (such as boron or gallium) or N-type impurities (such as phosphorus or arsenic). Therefore, it is a semiconductor region that contains a large amount of P-type impurities and N-type impurities. The region containing The source electrode is formed of a material different from the source region and is not included in the source region. The term refers to the conductive layer that is disposed in electrical contact with the source region. The source electrode is sometimes called the source electrode including the source region. Wiring for connecting the source electrodes of the transistors, wiring for connecting the source electrodes of each pixel This refers to a wiring for connecting a source electrode to another wiring, or a wiring for connecting a source electrode to another wiring.

[0062] However, there is a portion (area) that functions as both a source electrode and a source wiring. Such parts (areas, conductive films, wiring, etc.) are In other words, the source electrode and the source wiring are There are also areas where the lines are not clearly distinguishable. When a part of the source wiring overlaps with the source region, that part (region, conductive film , wiring, etc.) function as source wiring, but also function as source electrodes. Therefore, such a part (region, conductive film, wiring, etc.) can be called a source electrode. That's fine, you can call it source wiring.

[0063] Note that a part formed of the same material as the source electrode and forming the same island as the source electrode (the connected part (region, conductive film, wiring, etc.), or the part (region, conductive film, wiring, etc.) connecting the source electrode and the source electrode) may also be called the source electrode. Further, the part overlapping with the source region may also be called the source electrode. Similarly, a region formed of the same material as the source wiring and forming the same island as the source wiring and being connected may also be called the source wiring. Such parts (regions, conductive films, wirings, etc.) may not strictly have the function of connecting to another source electrode. However, due to relationships such as manufacturing specifications, there are parts (regions, conductive films, wirings, etc.) formed of the same material as the source electrode or the source wiring and connected to the source electrode or the source wiring. Therefore, such parts (regions, conductive films, wirings, etc.) may also be called the source electrode or the source wiring.

[0064]

[0065]

[0066] This is the case where the source wiring, source line, source signal line, data line, and data signal line are wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines. The drain is the same as the source. Note that the drain is the same as the source. Here, the semiconductor device refers to a device having a circuit including semiconductor elements (such as transistors, diodes, thyristors, etc.). Further, generally, a device that can function by utilizing semiconductor characteristics may also be referred to as a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device. Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the display element. The display device may include a peripheral drive circuit for driving the plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, that is, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached. The display device may be connected via a flexible printed circuit (FPC) or the like, and an IC chip

[0067] In this case, the source wiring, source line, source signal line, data line, and data signal line may mean wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines.

[0068] Here, the semiconductor device refers to a device having a circuit including semiconductor elements (such as transistors, diodes, thyristors, etc.). Further, generally, a device that can function by utilizing semiconductor characteristics may also be referred to as a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device. Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the display element. The display device may include a peripheral drive circuit for driving the plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, that is, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached. The display device may be connected via a flexible printed circuit (FPC) or the like, and an IC chip This is the case where the source wiring, source line, source signal line, data line, and data signal line are wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines. In this case, the source wiring, source line, source signal line, data line, and data signal line may mean wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines.

[0069] Here, the semiconductor device refers to a device having a circuit including semiconductor elements (such as transistors, diodes, thyristors, etc.). Further, generally, a device that can function by utilizing semiconductor characteristics may also be referred to as a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device. Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the display element. The display device may include a peripheral drive circuit for driving the plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, that is, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached. The display device may be connected via a flexible printed circuit (FPC) or the like, and an IC chip In this case, the source wiring, source line, source signal line, data line, and data signal line may mean wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines. Here, the semiconductor device refers to a device having a circuit including semiconductor elements (such as transistors, diodes, thyristors, etc.). Further, generally, a device that can function by utilizing semiconductor characteristics may also be referred to as a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device. Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the display element. The display device may include a peripheral drive circuit for driving the plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, that is, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached. The display device may be connected via a flexible printed circuit (FPC) or the like, and an IC chip In this case, the source wiring, source line, source signal line, data line, and data signal line may mean wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines. Here, the semiconductor device refers to a device having a circuit including semiconductor elements (such as transistors, diodes, thyristors, etc.). Further, generally, a device that can function by utilizing semiconductor characteristics may also be referred to as a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device. Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including the display element. The display device may include a peripheral drive circuit for driving the plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, that is, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached. The display device may be connected via a flexible printed circuit (FPC) or the like, and an IC chip In this case, the source wiring, source line, source signal line, data line, and data signal line may mean wirings formed in the same layer as the source (drain) of the transistor, wirings formed of the same material as the source (drain) of the transistor, or wirings formed simultaneously with the source (drain) of the transistor. Examples include wirings for holding capacitors, power lines, and reference potential supply lines. A printed wiring board to which a capacitor, a resistor, a capacitor element, an inductor, a transistor, etc. are attached may include a substrate (PWB). Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. Note that the display device may include an illumination device, a housing, an audio input / output device, an optical sensor, etc.

[0070] Note that the illumination device may have a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (such as an LED or a cold cathode tube), a cooling device (water-cooled, air-cooled), etc.

[0071] Note that the light-emitting device refers to a device having a light-emitting element or the like. When it has a light-emitting element as a display element, the light-emitting device is an example of a display device.

[0072] Note that the reflection device refers to a device having a light reflection element, a light diffraction element, a light reflection electrode, etc.

[0073] Note that the liquid crystal display device refers to a display device having a liquid crystal element. The liquid crystal display device includes a direct-view type, a projection type, a transmissive type, a reflective type, a transflective type, etc.

[0074] Note that the driving device refers to a device having a semiconductor element, an electric circuit, or an electronic circuit. For example, a transistor (sometimes called a selection transistor, a switching transistor, etc.) that controls the input of a signal from a source signal line into a pixel, a transistor that supplies a voltage or current to a pixel electrode, a transistor that supplies a voltage or current to a light-emitting element, etc. are examples of the driving device. Further, a circuit that supplies a signal to a gate signal line (a gate driver, a gate circuit, etc.), a transistor that supplies a voltage or current to a pixel electrode, a transistor that supplies a voltage or current to a light-emitting element, etc. are examples of the driving device. Further, a circuit that supplies a signal to a gate signal line (a gate driver, a gate circuit, etc.) is also an example of the driving device. a circuit that supplies a signal to a source signal line (sometimes called a source line driving circuit, etc.), such as a source driver is an example of a driving device.

[0075] Note that a display device, a semiconductor device, a lighting device, a cooling device, a light-emitting device, a reflecting device, a driving device, etc. may have overlapping functions with each other. For example, a display device may have a semiconductor device and a light-emitting device. Alternatively, a semiconductor device may have a display device and a driving device inside it.

[0076] When it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly in contact with A. It includes the case where they are not in direct contact, that is, the case where another object is interposed between A and B. Here, A and B are assumed to be objects (such as devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Accordingly, for example, when it is explicitly described that layer B is formed on (or on) layer A, it includes the case where layer B is directly formed on layer A and the case where another layer (such as layer C or layer D) is directly formed on layer A and layer B is directly formed on it. Note that another layer (such as layer C or layer D) may be a single layer or a multi-layer. layer or a multi-layer.

[0077] Therefore, for example, when it is explicitly described that layer B is formed on (or on) layer A, it includes the case where layer B is directly formed on layer A and the case where another layer (such as layer C or layer D) is directly formed on layer A and layer B is directly formed on it. Note that another layer (such as layer C or layer D) may be a single layer or a multi-layer. layer or a multi-layer. layer or a multi-layer. layer or a multi-layer.

[0078] Furthermore, the same applies when it is explicitly described that B is formed above A. It is not limited to the case where B is directly in contact with A, and another object may be interposed between A and B. ​For example, if a layer B is formed above a layer A, In this case, layer B is formed directly on layer A, and layer B is formed directly on layer A. Another layer (such as layer C or layer D) is formed, and layer B is formed directly on top of it. In addition, the other layers (e.g., layers C and D) may be single layers. Alternatively, it may be multi-layered.

[0079] In addition, B is formed on A, B is formed on A, or B is formed above A. When explicitly stating that B is formed, this also includes the case where B is formed diagonally above. .

[0080] The same applies to the case where B is below A, or B is below A.

[0081] In addition, where something is explicitly stated as singular, it is preferable to use the singular. However, this is not limited to this, and plurals are also possible. It is preferable that the items described are plural. However, this is not limited to this. , it is also possible that it is singular.

[0082] In the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0083] Note that the diagram is a schematic representation of an ideal example, and is not limited to the shapes or values shown in the diagram. For example, there are variations in shape due to manufacturing techniques, variations in shape due to errors, and noise. Variations in signals, voltages, or currents due to timing differences, or variations in signals, voltages, Or, it is possible to include current variation.

[0084] In addition, technical terms are often used for the purpose of describing specific embodiments, examples, etc., and are not limited thereto. Not limited to this.

[0085] In addition, words that are not defined (including scientific and technical words such as technical terms or academic terms) can be used as meanings equivalent to the general meanings understood by ordinary skilled persons in the art. Words defined by dictionaries, etc. should preferably be interpreted in a meaning that does not conflict with the background of the related art. is preferred.

[0086] In addition, terms such as first, second, and third are used to describe various elements, members, regions, layers, and areas separately from others. Therefore, terms such as first, second, and third do not limit the number of elements, members, regions, layers, areas, etc. Furthermore, for example, "the first" can be replaced with "the second" or "the third". or "the third", etc.

[0087] In addition, terms indicating spatial arrangements such as "above", "upward", "below", "downward", "sideways", "right", "left", "diagonal", "inward", or "forward", etc. are often used to simply show the relationship between an element or feature and other elements or features by means of a figure. However, it is not limited thereto, and these terms indicating spatial arrangements can include other directions in addition to the directions depicted in the figure. For example, when explicitly shown as B above A, it is not limited to B being above A. Since the devices in the figure can be inverted or rotated 180°, it is possible to include B being below A. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". For example, when explicitly shown as B above A, it is not limited to B being above A. Since the devices in the figure can be inverted or rotated 180°, it is possible to include B being below A. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". For example, when explicitly shown as B above A, it is not limited to B being above A. Since the devices in the figure can be inverted or rotated 180°, it is possible to include B being below A. Thus, the term "above" ​​​In addition, without being limited to this, since the device in the figure can rotate in various directions, the phrase " above" can include other directions such as "sideways", "to the right", "to the left", "diagonally", "towards the back", or "towards the front" in addition to the directions of "above" and "below". .

Advantages of the Invention

[0088] In the disclosed invention, a transistor having translucency or a capacitive element having translucency can be formed. Therefore, even when a transistor or a capacitive element is arranged in a pixel, light can be transmitted through the portion where the transistor or the capacitive element is formed, so that the aperture ratio can be improved. Further, the wiring connecting the transistor and an element (for example, another transistor), or the wiring connecting the capacitive element and an element (for example, another capacitive element) can be formed using a material having a low resistivity and a high conductivity. Therefore, the waveform distortion of the signal can be reduced, and the voltage drop due to the wiring resistance can be reduced.

Brief Description of the Drawings

[0089]

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Embodiments for Carrying Out the Invention

[0090] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the description of the embodiments shown below, and it is obvious to those skilled in the art that the forms and details can be variously changed without departing from the spirit of the invention. In the configuration of the invention described below, the same reference numerals are used for the same parts or parts having similar functions, and the repeated description thereof is omitted.

[0091]

[0091] Note that the content described in one embodiment (even a part of the content) can be...Another content (which may be part of the content), and / or application, combination, or replacement with respect to the content described in the form of (which may be part of the content). can be performed.

[0092] Note that the content described in the embodiments refers to the content described using various figures in each embodiment, or the content described using the text described in the specification.

[0093] Note that the figure (which may be part of it) described in a certain embodiment is combined with another part of that figure, another figure (which may be part of it) described in that embodiment, and / or one or more figures (which may be part of it) described in other embodiments,

[0094] Note that in the figure or text described in a certain embodiment, taking out a part of it can constitute an aspect of the invention. Therefore, when a figure or text describing a part is described, the content obtained by taking out a part of that figure or text is also disclosed as an aspect of the invention and can constitute an aspect of the invention. For this reason, for example, active elements (such as transistors, diodes, etc.), wiring, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, substrates, modules, devices, solids, liquids, gases, operating methods, manufacturing methods, etc. are described singly or plurally in the drawings (cross-sectional views, plan views, circuit diagrams, block diagrams, flowcharts, process diagrams, perspective views , elevation views, layout diagrams, timing charts, structure diagrams, schematic diagrams, graphs, tables, optical path diagrams, vectors In a circuit diagram, state diagram, waveform diagram, photograph, chemical formula, etc.) or in a text, a part thereof is extracted and it is assumed that it can constitute one aspect of the invention.

[0095] (Embodiment 1) In this embodiment, a semiconductor device and a method for manufacturing the same will be described with reference to the drawings.

[0096] FIG. 1 and FIG. 2 show a configuration example of the semiconductor device shown in this embodiment. Note that FIG. 1 is a top view and FIG. 2(A) corresponds to the cross section between A and B in FIG. 1, and FIG. 2(B) corresponds to the cross section between C- D in FIG. 1.

[0097] The semiconductor device shown in FIG. 1 has a pixel portion 150 provided with a transistor 152 and a holding capacitor portion 154, a wiring 122, a wiring 124, and a wiring 126. Note that in FIG. 1

[0098] the pixel portion 150 refers to a region surrounded by a plurality of wirings 122 and a plurality of wirings 126. The wiring 122 can function as a gate wiring. The wiring 124 can function as a capacitor wiring

[0099] or a common wiring. The wiring 126 can function as a source wiring but is not limited thereto.

[0100]

[0100] Note that the electrode 132 can function as a gate electrode. The insulating layer 106 is a gate It can function as a gate insulating layer. Electrode 136 or electrode 138 can function as a source electrode or a drain electrode. The semiconductor layer 112a can be made of an oxide semiconductor, but is not limited thereto.

[0101] Electrode 132 is provided by a conductive layer 102a having translucency and is electrically connected to wiring 122. Wiring 122 is provided in a laminated structure of a conductive layer 102a and a conductive layer 104a. Also, the conductive layer 102a constituting electrode 132 and the conductive layer 102a constituting wiring 122 are formed on the same island. By providing electrode 132 and wiring 122 with the same island-shaped conductive layer 102a, the electrical connection between electrode 132 and wiring 122 can be made good. Also, by providing electrode 132 and wiring 122 with the same island-shaped conductive layer 102a, the number of masks can be reduced in the manufacturing process and cost reduction can be achieved. Note that an underlying insulating layer may be provided between substrate 100 and electrode 132.

[0102] The conductive layer 102a can be provided with a material having translucency such as indium tin oxide (ITO). Also, the conductive layer 104a may be provided with a material having a lower resistivity than the conductive layer 102a. For example, metals such as aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (N d), niobium (Nb), cerium (Ce), chromium (Cr), or alloy materials mainly composed of these metal materials, or nitrides containing these metal materials as components can be used. It can be formed in a single layer or a laminate. Generally, these metal materials have light-shielding properties. Therefore, in the structure shown in FIG. 1, the portion where the electrode 132 is formed exhibits light transmissivity, and the portion where the wiring 1 22 is formed exhibits light-shielding properties as compared with the portion where the electrode 132 is formed. .

[0103] Note that having light transmissivity as described above means that, at least, the light transmittance in the visible region (about 400 nm to 800 nm) is high compared with the conductive layer 104a and the conductive layer 110a. This implies that the light transmittance in the visible region (about 400 nm to 800 nm) is high compared with the conductive layer 104a and the conductive layer 110a. It means that the light transmittance in the visible region (about 400 nm to 800 nm) is high compared with the conductive layer 104a and the conductive layer 110a.

[0104] Also, it is preferable to form the conductive layer 104a thicker than the conductive layer 102a. When the conductive layer 104 a is formed thick, the wiring resistance can be reduced. Also, when the conductive layer 102a is formed thin, the light transmittance can be improved. However, it is not limited to this. It is not limited to this.

[0105] Note that in FIGS. 1 and 2, the case where the conductive layer 104a is laminated on the conductive layer 102a as the wiring 122 is shown, but the conductive layer 102a may be laminated on the conductive layer 104a. Note that in FIGS. 1 and 2, the case where the conductive layer 104a is laminated on the conductive layer 102a as the wiring 122 is shown, but the conductive layer 102a may be laminated on the conductive layer 104a.

[0106] The electrode 136 is provided with a conductive layer 108a having light transmissivity and is electrically connected to the wiring 126. The wiring 126 is provided in a laminated structure of the conductive layer 108a and the conductive layer 110a. Also, the conductive layer 108a constituting the electrode 136 and the conductive layer 108a constituting the wiring 126 are formed on the same island. By providing the electrode 136 and the wiring 126 with the same island-shaped conductive layer 108a, the electrical connection between the electrode 136 and the wiring 126 can be made good. between the electrode 136 and the wiring 126 can be made good. between the electrode 136 and the wiring 126 can be made good.

[0107] Further, the electrode 138 is provided by the conductive layer 108b having translucency. The electrode 136 and the electrode 138 can be formed using the same material.

[0108] The conductive layers 108a and 108b can be provided with a material having translucency such as indium tin oxide. Further, the conductive layer 110a may be provided with a material having a lower resistivity than the conductive layer 108a. For example, metals such as aluminum (Al), tungsten (W), titanium (Ti), tantalum ( Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au ), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), cerium (C e), chromium (Cr), or alloy materials mainly composed of these metal materials , or nitrides containing these metal materials as components can be used to form a single layer or a laminate. Generally, since metal materials have light-shielding properties, in the structure shown in FIG. 1, the portion where the electrode 136 is formed exhibits translucency, and the portion where the wiring 126 is formed exhibits light-shielding properties as compared with the portion where the electrode 136 is formed.

[0109] Further, it is preferable that the conductive layer 110a is formed thicker than the conductive layers 108a and 108b. When the conductive layer 110a is formed thick, the wiring resistance can be reduced. When the conductive layers 108a and 108b are formed thin, the transmittance can be improved. However, it is not limited thereto.

[0110] The wiring 124 is preferably formed using the conductive layer 102b having translucency. Further, as shown in FIGS. 1 and 2, in the region where the wiring 124 and the wiring 126 overlap (and the vicinity thereof) In this case, a stacked structure of a conductive layer 102b and a conductive layer 104b having a lower resistance than the conductive layer 102b can be provided. As shown in FIGS. 1 and 2, by forming the wiring 124, the aperture ratio of the pixel portion 150 can be improved, the wiring resistance of the wiring 124 can be reduced, and low power consumption can be achieved. Of course, the wiring 124 can be provided only with the conductive layer 102b having translucency or only with the conductive layer 104b. The storage capacitor portion 154 is configured with the insulating layer 106 as a dielectric and the conductive layer 102b having translucency and the conductive layer 108c having translucency as electrodes. Further, the conductive layer 108c is electrically connected to the conductive layer 116. The electrical connection between the conductive layer 108c and the conductive layer 116 can be made through a contact hole formed in the insulating layer 114 that functions as an interlayer film. Note that the conductive layer 116 can function as a pixel electrode. Further, as the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114 are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(A)). Alternatively, in FIG. 35(A), a structure in which an insulating layer 114a made of an inorganic material (such as silicon nitride) and an insulating layer 114b made of an organic material are sequentially stacked as the insulating layer 114 is used, and the insulating layer 114b made of an organic material is removed in the storage capacitor portion 154. As the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114a are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(B)). As shown in FIGS. 1 and 2, the storage capacitor portion 154 can be provided using a material having translucency.

[0111] The storage capacitor portion 154 is configured with the insulating layer 106 as a dielectric and the conductive layer 102b having translucency and the conductive layer 108c having translucency as electrodes. Further, the conductive layer 108c is electrically connected to the conductive layer 116. The electrical connection between the conductive layer 108c and the conductive layer 116 can be made through a contact hole formed in the insulating layer 114 that functions as an interlayer film. Note that the conductive layer 116 can function as a pixel electrode. Further, as the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114 are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(A)). Alternatively, in FIG. 35(A), a structure in which an insulating layer 114a made of an inorganic material (such as silicon nitride) and an insulating layer 114b made of an organic material are sequentially stacked as the insulating layer 114 is used, and the insulating layer 114b made of an organic material is removed in the storage capacitor portion 154. As the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114a are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(B)). As shown in FIGS. 1 and 2, the storage capacitor portion 154 can be provided using a material having translucency. The storage capacitor portion 154 is configured with the insulating layer 106 as a dielectric and the conductive layer 102b having translucency and the conductive layer 108c having translucency as electrodes. Further, the conductive layer 108c is electrically connected to the conductive layer 116. The electrical connection between the conductive layer 108c and the conductive layer 116 can be made through a contact hole formed in the insulating layer 114 that functions as an interlayer film. Note that the conductive layer 116 can function as a pixel electrode.

[0112] Further, as the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114 are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(A)). Alternatively, in FIG. 35(A), a structure in which an insulating layer 114a made of an inorganic material (such as silicon nitride) and an insulating layer 114b made of an organic material are sequentially stacked as the insulating layer 114 is used, and the insulating layer 114b made of an organic material is removed in the storage capacitor portion 154. As the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114a are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(B)). As shown in FIGS. 1 and 2, the storage capacitor portion 154 can be provided using a material having translucency. The storage capacitor portion 154 is configured with the insulating layer 106 as a dielectric and the conductive layer 102b having translucency and the conductive layer 108c having translucency as electrodes. Further, the conductive layer 108c is electrically connected to the conductive layer 116. The electrical connection between the conductive layer 108c and the conductive layer 116 can be made through a contact hole formed in the insulating layer 114 that functions as an interlayer film. Note that the conductive layer 116 can function as a pixel electrode. Further, as the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114 are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(A)). Alternatively, in FIG. 35(A), a structure in which an insulating layer 114a made of an inorganic material (such as silicon nitride) and an insulating layer 114b made of an organic material are sequentially stacked as the insulating layer 114 is used, and the insulating layer 114b made of an organic material is removed in the storage capacitor portion 154. As the storage capacitor portion 154, a configuration may be adopted in which the insulating layer 106 and the insulating layer 114a are used as dielectrics, and the conductive layer 102b and the conductive layer 116 are used as electrodes (see FIG. 35(B)). As shown in FIGS. 1 and 2, the storage capacitor portion 154 can be provided using a material having translucency.

[0113] As shown in FIGS. 1 and 2, the storage capacitor portion 154 can be provided using a material having translucency. ​​​​This allows light to pass through the area where the storage capacitor 154 is formed. Therefore, the aperture ratio of the pixel section 150 can be improved.

[0114] In addition, by forming the electrode for the storage capacitor 154 from a conductive layer having light transmission properties, Therefore, the storage capacitor 154 can be enlarged without decreasing the aperture ratio. By making the conductive layer 4 large, even when the transistor 152 is turned off, The potential retention characteristic of the feedthrough 116 is improved, and the display quality is improved. By reducing the field-through potential, the positive This allows for accurate voltage application, reducing flickering and improving noise resistance. By increasing the number of inputs, crosstalk can be reduced.

[0115] The conductive layer 116 is electrically connected to the electrode 138 and the conductive layer 108c.

[0116] As described above, the electrode 132, the semiconductor layer 112a, the electrode 136, the electrode 138, and the storage capacitor 1 The region 54 in which the transistor 152 is formed is formed of a light-transmitting material. Since light can be transmitted through the region where the storage capacitor 154 is formed and the region where the storage capacitor 154 is formed, The aperture ratio of the element portion 150 can be improved. By providing a part of 24 with a conductive layer made of a metal material with low resistivity, the wiring resistance can be reduced. As a result, waveform distortion can be reduced. can be reduced.

[0117] Usually, the gate wiring and gate electrode, and the source wiring and source electrode are formed on the same island. is formed. Therefore, when the gate electrode, source electrode, and drain electrode are made of a material having translucency the wirings such as the gate wiring and source wiring are also formed of a material having translucency . However, materials having translucency, such as indium tin oxide, indium zinc oxide, indium tin zinc oxide, etc., have a lower conductivity compared to materials having light-shielding and reflective properties, such as metal materials such as aluminum, molybdenum, titanium, tungsten, neodymium, copper, silver, etc. Therefore, it becomes difficult to sufficiently reduce the wiring resistance. For example, when manufacturing a large display device, since the wiring becomes long, the wiring resistance is very likely to become high. Thus , as described above, by forming the electrode 132, semiconductor layer 112a, electrode 136, electrode 138, and holding capacitance portion 154 with a material having translucency and providing a part of the wirings 122, 126, 124 with a conductive layer made of a metal material having a low resistivity, such problems can be solved.

[0118] Further, by forming the conductive layer 104a constituting the gate wiring and the conductive layer 110a constituting the source wiring using a light-shielding metal material, the wiring resistance can be reduced and the region between adjacent pixel portions can be shielded from light. That is, the region between pixels without using a black matrix can be shielded from light by the gate wiring arranged in the row direction and the source wiring arranged in the column direction. Of course, a black matrix may be separately provided to perform light shielding more effectively.

[0119] In addition, in the structure shown in FIGS. 1 and 2, a configuration may be adopted in which the holding capacitance portion 154 is not provided . In this case, the wiring 124 also becomes unnecessary.

[0120] Next, with reference to FIGS. 3 to 5, an example of the method for manufacturing the semiconductor device shown in FIGS. 1 and 2 will be described. Hereinafter, it will be described.

[0121] First, a conductive film 102 is formed on a substrate 100 (see FIG. 3(A)). An underlying insulating film may be formed between the substrate 100 and the conductive film 102.

[0122] As the substrate 100, for example, a glass substrate can be used. In addition, as the substrate 100 and, an insulating substrate made of an insulator such as a ceramic substrate, a quartz substrate, or a sapphire substrate, a semiconductor substrate made of a semiconductor material such as silicon etc. whose surface is coated with an insulating material, or a conductive substrate made of a conductor such as metal or stainless steel etc. whose surface is coated with an insulating material can be used. Also, if it can withstand the heat treatment in the manufacturing process, a plastic substrate can also be used .

[0123] As the conductive film 102, a material having translucency can be used to form it. As the material having translucency , for example, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin , zinc oxide (ZnO), etc. can be used. Also, indium zinc oxide (IZO) containing zinc oxide, a material doped with gallium (Ga) in zinc oxide , tin oxide (SnO2), indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, etc. may be used. These materials can be formed into a single-layer structure or a laminated structure by sputtering . However, when forming a laminated structure . ​ It is desirable to sufficiently increase the light transmittance in the laminated structure.

[0124] Next, a resist mask 161 is formed on the conductive film 102, and the conductive film 102 is etched using the resist mask 161 to form island-shaped conductive layers 102a and 102b (see Fig. 3(B)). The conductive layer 102a functions as part of the wiring 122 and the electrode 132. Also, the conductive layer 102b functions as part of the wiring 124. b is formed (see Fig. 3(B)).

[0125] The conductive layer 102a functions as part of the wiring 122 and the electrode 132. Also, the conductive layer 102b functions as part of the wiring 124. The conductive layer 102b functions as part of the wiring 124.

[0126] Next, a conductive film 104 is formed on the substrate 100, the conductive layer 102a, and the conductive layer 102b (see Fig. 3(C)). See Fig. 3(C).

[0127] As the conductive film 104, a metal material such as aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), cerium (Ce), chromium (Cr), or an alloy material mainly composed of these metal materials, or a nitride containing these metal materials as components can be used to form a single layer or a laminate. In particular, it is desirable to form it with a low-resistance conductive material such as aluminum. When the conductive film 104 is formed on the conductive layers 102a and 102b, the films of the two may react with each other. For example, when ITO is used for the conductive layers 102a and 102b and aluminum is used for the conductive film 104, a chemical reaction may occur. Therefore, it is desirable to form it with a low-resistance conductive material such as aluminum. Yes.

[0128] When the conductive film 104 is formed on the conductive layers 102a and 102b, the films of the two may react with each other. For example, when ITO is used for the conductive layers 102a and 102b and aluminum is used for the conductive film 104, a chemical reaction may occur. Therefore, a chemical reaction may occur. Therefore, In order to avoid chemical reactions, it is desirable to use a high melting point material between the conductive layers 102a, 102b and the conductive film 104. For example, examples of high melting point materials include molybdenum, titanium, tungsten, tantalum, chromium, etc. Then, it is preferable to form the conductive film 104 as a multilayer film using a material with high conductivity on the film made of the high melting point material. Examples of materials with high conductivity include aluminum, copper, silver, etc. For example, when forming the conductive film 104 in a laminated structure, the first layer can be molybdenum, the second layer can be aluminum, and the third layer can be a laminate of molybdenum, or the first layer can be molybdenum, the second layer can be aluminum containing a small amount of neodymium, and the third layer can be a laminate of molybdenum. By adopting such a configuration, hillock can be prevented. Next, a resist mask 162 is formed on the conductive film 104, and the conductive film 104 is etched using the resist mask 162 to form island-shaped conductive layers 104a and 104b (see Fig. 3(D)). At this time, the conductive film 104 formed on the conductive layer 102a that functions as the electrode 132 and the conductive film 104 provided in the region arranged in the pixel portion in the wiring 124 are removed. The conductive layer 104a functions as a part of the wiring 122. Also, the conductive layer 104b functions as a part of the wiring 124. In addition, in Fig. 3(D), the case where the width of the conductive layer 104a is formed to be smaller than the width of the conductive layer 102a and the width of the conductive layer 104b is formed to be smaller than the width of the conductive layer 102b is shown.

[0129]

[0130]

[0131]

[0132]

[0131]

[0132] Although shown, it is not limited thereto. The width of the conductive layer 104a may be made larger than the width of the conductive layer 102a and the conductive layer 104a may be formed so as to cover the conductive layer 102a, or the width of the conductive layer 104b may be made larger than the width of the conductive layer 102b and the conductive layer 104b may be formed so as to cover the conductive layer 102b.

[0133] Next, an insulating layer 106 is formed so as to cover the conductive layers 102a, 102b, the conductive layers 104a, 104b, and then a conductive film 108 is formed on the insulating layer 106 (see Fig. 3(E)).

[0134] The insulating layer 106 can be provided as a single layer or a laminate of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, an aluminum oxynitride film, or a tantalum oxide film. The insulating layer 106 can be formed to have a film thickness of 50 nm or more and 250 nm or less using a sputtering method or the like. For example, as the insulating layer 106, a silicon oxide film can be formed to a thickness of 100 nm by a sputtering method or a CVD method. Or, an aluminum oxide film can be formed to a thickness of 100 nm by a sputtering method. The conductive film 108 can be formed using a material having translucency. As the material having translucency, for example, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide (ZnO), etc. can be used.

[0135] In addition, indium zinc oxide (IZO) containing zinc oxide, gallium (Ga) added to zinc oxide ​​​​​​​​​​Doped materials, indium oxide containing tin oxide (SnO2), tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxidation Indium tin oxide containing titanium oxide, etc. may also be used. These materials can be formed into a single-layer structure or a laminated structure by sputtering method. However, when a laminated structure is used, it is desirable to make the light transmittance of all the multiple films sufficiently high.

[0136] Next, a resist mask 163 is formed on the conductive film 108, and by etching the conductive film 108 using the resist mask 163, island-shaped conductive layers 108a, 108b, and 108c are formed (see Fig. 4(A)).

[0137] The conductive layer 108a functions as part of the wiring 126 and the electrode 136. Also, the conductive layer 10 8b functions as the electrode 138. Also, the conductive layer 108c functions as one of the electrodes of the holding capacitor portion 154.

[0138] Also, it is preferable to form the end portion of the conductive layer 108b in a tapered shape. This is because it can prevent the step of the semiconductor layer formed on the conductive layer 108 b.

[0139] Next, a conductive film 110 is formed so as to cover the conductive layers 108a to 108c (see Fig. 4(B) ).

[0140] As the conductive film 110, metal materials such as aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) , gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), etc., and also ​​​are alloy materials whose main components are these metal materials, or nitride materials whose components are these metal materials. The conductive material may be a low-resistance conductive material such as aluminum. It is preferable to form the material from

[0141] When the conductive film 110 is formed on the conductive layers 108a to 108c, the two films react with each other. For example, when ITO is used as the conductive layers 108a to 108c, the conductive film 11 If aluminum is used as 0, a chemical reaction may occur. In order to prevent chemical reactions from occurring, It is desirable to use a high melting point material for the above-mentioned. For example, molybdenum is an example of a high melting point material. Examples of materials that can be used include titanium, tungsten, tantalum, and chromium. It is preferable to form the conductive film 110 as a multi-layer film by using a material with high conductivity on the previously formed film. Materials with high electrical conductivity include aluminum, copper, and silver. When the film 110 is formed in a laminated structure, the first layer is made of molybdenum, the second layer is made of aluminum, The third layer is a layer of molybdenum, or the first layer is molybdenum and the second layer is a small amount of neodymium. The first layer is made of aluminum, and the second layer is made of molybdenum. By so doing, hillocks can be prevented.

[0142] Next, a resist mask 164 is formed over the conductive film 110. The conductive film 110 is etched using the etching method to form island-shaped conductive layers 110a (FIG. 4). (See (C)).

[0143] Specifically, etching is performed so that the conductive film 110 remains on the conductive layer 108a. In this case, the conductive film 110 formed on the conductive layer 108a that functions as the electrode 136 is removed. That is, the conductive layer 110a functions as part of the wiring 126.

[0144] Next, a semiconductor film 112 having translucency is formed so as to cover the conductive layers 108a and 108b, the insulating layer 106, etc. (see Fig. 4(D)). (See Fig. 4(D).)

[0145] As the semiconductor film 112, for example, an oxide semiconductor containing In, M, or Zn can be used. Here, M represents one metal element or a plurality of metal elements selected from Ga, Fe, Ni, Mn, Co, etc. When Ga is used as M, this thin film is also called an In-Ga-Zn-O-based non-single crystal film. In addition, in the above oxide semiconductor, in addition to the metal elements contained as M, impurity elements such as Fe, Ni, and other transition metal elements, or oxides of the transition metals are included in some cases. Further, the semiconductor film 112 may contain insulating impurities. Examples of such impurities include insulating oxides typified by silicon oxide, germanium oxide, and aluminum oxide, insulating nitrides typified by silicon nitride and aluminum nitride, or insulating oxynitrides such as silicon oxynitride and aluminum oxynitride. These insulating oxides or insulating nitrides are added at a concentration that does not impair the electrical conductivity of the oxide semiconductor. By including insulating impurities in the oxide semiconductor, crystallization of the oxide semiconductor can be suppressed. By suppressing the crystallization of the oxide semiconductor, the characteristics of the thin film transistor can be stabilized. By including impurities such as silicon oxide in the In-Ga-Zn-O-based oxide semiconductor, crystallization of the oxide semiconductor can be suppressed. By suppressing the crystallization of the oxide semiconductor, the characteristics of the thin film transistor can be stabilized.

[0146] the characteristics of the thin film transistor can be stabilized. Even when heat treatment is performed at 300°C to 600°C, crystallization of the oxide semiconductor or generation of microcrystalline grains can be prevented. In the manufacturing process of a thin-film transistor having an In-Ga-Zn-O-based oxide semiconductor layer as a channel formation region, by performing heat treatment, it is possible to improve the S value (subthreshold swing value) and the field-effect mobility. However, even in such a case, it is possible to prevent the thin-film transistor from becoming normally-on. Further, even when heat stress or bias stress is applied to the thin-film transistor, variation in the threshold voltage can be prevented. In addition to the above, as the oxide semiconductor to be applied to the channel formation region of the thin-film transistor, In-Sn-Zn-O-based, In-Al-Zn-O-based, Sn-Ga-Zn-O-based, Al-Ga-Zn-O-based, Sn-Al-Zn-O-based, In-Zn-O-based, Sn-Zn-O-based, Al-Zn-O-based, In-O-based, Sn-O-based, Zn-O-based oxide semiconductors can be applied. That is, by adding impurities that suppress crystallization and maintain an amorphous state to these oxide semiconductors, the characteristics of the thin-film transistor can be stabilized. The impurities are insulating oxides typified by silicon oxide, germanium oxide, aluminum oxide, insulating nitrides typified by silicon nitride, aluminum nitride, or insulating oxynitrides such as silicon oxynitride, aluminum oxynitride. As an example, the semiconductor film 112 can be formed by a sputtering method using an oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2O3:ZnO = 1:1:1).

[0147]

[0148] ​​​​​​​​​​​​​​​It is possible. As sputtering conditions, for example, the distance between the substrate 100 and the target is 30 mm to 500 mm, the pressure is 0.1 Pa to 2.0 Pa, the DC (direct current) power supply is 0.25 kW to 5.0 kW (when using an 8-inch diameter target), and the atmosphere can be an argon atmosphere, an oxygen atmosphere, or a mixed atmosphere of argon and oxygen. The film thickness of the semiconductor film 112 may be about 5 nm to 200 nm.

[0149] As the above sputtering method, an RF sputtering method using a high-frequency power supply for the sputtering power supply, a D C sputtering method, a pulsed DC sputtering method in which a DC bias is applied pulsedly, etc. can be used The RF sputtering method is mainly used when forming an insulating film, and the DC sputtering method is mainly used when forming a metal film.

[0150] Also, a multi-source sputtering apparatus capable of installing a plurality of targets made of different materials may be used. In a multi-source sputtering apparatus, different films can be laminated and formed in the same chamber, or a single film can be formed by simultaneously sputtering a plurality of types of materials in the same chamber. Furthermore, a method using a magnetron sputtering apparatus equipped with a magnetic field generation mechanism inside the chamber (magnetron sputtering method), an ECR sputtering method using plasma generated by using microwaves, etc. may be used An ECR sputtering method using plasma generated by using microwaves, etc. may also be used. Also, a reactive sputtering method in which a chemical reaction is caused between the target substance and the sputtering gas component during film formation to form their compounds, a bias sputtering method in which a voltage is also applied to the substrate during film formation, etc. may be used their compounds, a bias sputtering method in which a voltage is also applied to the substrate during film formation, etc. may be used As for the semiconductor material used as the channel layer of the transistor 152, it is not limited to an oxide semiconductor

[0151] For example, a silicon layer (an amorphous silicon layer, a microcrystalline silicon layer, a polycrystalline silicon layer) A crystalline silicon layer or a single-crystalline silicon layer) may also be used as the channel layer of the transistor 152. Alternatively, as the channel layer of the transistor 152, a transparent organic semiconductor material , carbon nanotubes, or compound semiconductors such as gallium arsenide and indium phosphide may be used. Note that the semiconductor layer having light-transmitting properties means that it only needs to have higher light-transmitting properties than the conductive layer 1 04a constituting the wiring 122 and the conductive layer 110a constituting the wiring 126.

[0152] In this embodiment, since the semiconductor film 112 is provided after the formation of the conductive layers (conductive layer 108a, conductive layer 108b, conductive layer 110a), the semiconductor film 112 is not etched during the etching of these conductive layers. Therefore, the semiconductor film 112 can be formed thinly. By providing the semiconductor film 112 thinly, the light-transmitting properties are improved and a depletion layer is easily formed. As a result, the S value of the transistor can be reduced, and the switching characteristics of the transistor can be improved. Also, the off-current can be lowered.

[0153] Note that the thickness of the semiconductor film 112 is preferably formed thinner than the conductive layer 108a and the conductive layer 108b. However, it is not limited to this.

[0154] Next, a resist mask 165 is formed on the semiconductor film 112, and the semiconductor film 112 is etched using the resist mask 165 to form an island-shaped semiconductor layer 112a (see Fig. 5(A)). (See Fig. 5(A).)

[0155] Also, the semiconductor layer 112a may be formed before forming the conductive film 110 (after Fig. 4(A)). In this case, after performing the process of Fig. 4(A), the semiconductor film 112 is formed and etched. ​ An island-shaped semiconductor layer 112a can be formed, and then the conductive film 110 can be formed. .

[0156] Also, after forming the semiconductor layer 112a, it is preferable to perform a heat treatment at 100 °C to 600°C, typically 200°C to 400°C, in a nitrogen atmosphere or an air atmosphere. For example, a heat treatment at 350°C for 1 hour can be performed in a nitrogen atmosphere. By this heat treatment, atomic-level rearrangement of the island-shaped semiconductor layer 112a is carried out. This heat treatment (including photo annealing, etc.) is important in that it can release the strain that inhibits the movement of carriers in the island-shaped semiconductor layer 112a. Note that the timing of performing the above heat treatment is not particularly limited as long as it is after the formation of the semiconductor film 112.

[0157] Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrodes 136, 138, and the conductive layer 108c (see Fig. 5(B)).

[0158] The insulating layer 114 can be provided as a single layer or a laminated structure with a film made of an insulating film containing oxygen or nitrogen such as silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, a film containing carbon such as DLC (diamond-like carbon), or an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as siloxane resin.

[0159] Also, the insulating layer 114 can have a function as a color filter. By providing a color filter on the substrate 1 00 side, there is no need to provide a color filter on the counter substrate side, and there is no need for a margin for adjusting the positions of the two substrates, so the panel Manufacturing can be facilitated.

[0160] Next, a conductive layer 116 is formed on the insulating layer 114 (see Fig. 5(C)). The conductive layer 116 can function as a pixel electrode and is formed so as to be electrically connected to the conductive layer 108c.

[0161] As the conductive layer 116, a material having translucency can be used. Examples of the material having translucency include, for example, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide (ZnO), etc. Further, indium zinc oxide (IZO) containing zinc oxide, a material doped with gallium (Ga) in zinc oxide, tin oxide (SnO2), indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, etc. may be used. These materials can be formed in a single-layer structure or a laminated structure by sputtering. However, when a laminated structure is used, it is desirable to make the light transmittance of all of the plurality of films sufficiently high. Specifically, in order to enhance the translucency in the pixel portion, it is preferable to form the conductive layer 116 thinner than the conductive layer 102a and the conductive layer 108a. However, it is not limited to this.

[0162] Through the above steps, a semiconductor device can be manufactured. According to the manufacturing method shown in this embodiment, a transistor 152 having translucency and a holding capacitor portion 154 having translucency can be formed. Therefore, even when transistors and capacitor elements are arranged within a pixel, ​​​​​​​ Also, light can be transmitted even through the portions where transistors and capacitive elements are formed, so that the aperture ratio can be improved. Further, the wiring for connecting a transistor and an element (e.g., another transistor) can be formed using a material having a low resistivity and a high conductivity, so that the waveform distortion of the signal can be reduced and the voltage drop due to the wiring resistance can be reduced.

[0163] Also, in the present embodiment, a structure (bottom contact type) in which the semiconductor layer 112a is provided on the electrodes 136 and 138 has been shown, but the present invention is not limited to this. For example, a structure (channel etch type) in which the electrodes 136 and 138 are provided on the semiconductor layer 112a may be used (see FIG. 4 5). Note that FIG. 45(A) is a top view, and FIG. 45(B) corresponds to a cross section between A and B in FIG. 45(A).

[0164] The structure shown in FIG. 45 can be obtained by forming the conductive film 108 after forming and patterning the semiconductor film 112 on the insulating layer 106 in FIG. 3(E).

[0165] Also, in the structure shown in FIG. 45, a structure (channel protection type) in which an insulating layer 127 that functions as a channel protection film is provided on the semiconductor layer 112a may be used (see FIG. 46(A)). By providing the insulating layer 127, the semiconductor layer 112a can be protected when patterning the conductive film 108.

[0166] (Embodiment 2) In the present embodiment, a method for manufacturing a semiconductor device different from that in the above Embodiment 1 will be described with reference to the drawings. Specifically, the case of manufacturing a semiconductor A description will be given. Note that the manufacturing process of the semiconductor device in the present embodiment is common to Embodiment 1 in many parts. Therefore, in the following, overlapping parts will be omitted, and different points will be described in detail. First, a conductive film 102 is formed on a substrate 100, and then a conductive film 104 is formed on the conductive film 102 (see Fig. 7(A)). An underlying insulating film may be provided between the substrate 100 and the conductive film 102.

[0167] Next, resist masks 171a to 171c are formed on the conductive film 104 (see Fig. 7(B)).

[0168]

[0169] By using a multi-tone mask, resist masks with different thicknesses can be selectively formed.

[0170] A multi-tone mask is a mask capable of performing exposure with a multi-stage amount of light. Typically, exposure is performed with three levels of light amount: an exposed area, a semi-exposed area, and an unexposed area. By using a multi-tone mask, resist masks having a plurality of (typically two types) thicknesses can be formed by a single exposure and development process. Therefore, by using a multi-tone mask, the number of photomasks can be reduced. Hereinafter, with reference to Fig. 6, the light transmittance in the case of using a multi-tone mask will be described.

[0171] Fig. 6 shows a cross-section of a typical multi-tone mask. Fig. 6(A-1) shows the case of using a grayscale mask 403, and Fig. 6(B-1) shows the case of using a halftone mask 414.

[0172] The grayscale mask 403 shown in Fig. 6(A-1) includes a light-transmissive substrate 400, a light-shielding portion 401 formed by a light-shielding layer, and a diffraction grating 402 provided by the pattern of the light-shielding layer. The diffraction grating 402 controls the light transmittance by having slits, dots, or meshes provided at intervals below the resolution limit of the light used for exposure. Note that the slits, dots, or meshes provided in the diffraction grating 402 may be periodic or non-periodic. It is composed of...

[0173] The diffraction grating 402 controls the light transmittance by having slits, dots, or meshes provided at intervals below the resolution limit of the light used for exposure. Note that the slits, dots, or meshes provided in the diffraction grating 402 may be periodic or non-periodic. For the light-transmissive substrate 400, quartz or the like can be used. The light-shielding layer constituting the light-shielding portion 401 and the diffraction grating 402 may be formed using a metal film, preferably chromium or chromium oxide. When the grayscale mask 403 is irradiated with light for exposure, as shown in Fig. 6(A-2), the light transmittance in the region overlapping the light-shielding portion 401 becomes 0%, and the light transmittance in the region where the light-shielding portion 401 or the diffraction grating 402 is not provided can be 100%.

[0174] For the light-transmissive substrate 400, quartz or the like can be used. The light-shielding layer constituting the light-shielding portion 401 and the diffraction grating 402 may be formed using a metal film, preferably chromium or chromium oxide. It is preferably provided by chromium oxide or the like.

[0175] In addition, the light transmittance in the diffraction grating 402 is generally in the range of 10% to 70% and can be adjusted by the interval of the slits, dots, or meshes of the diffraction grating. When the grayscale mask 403 is irradiated with light for exposure, as shown in Fig. 6(A-2), the light transmittance in the region overlapping the light-shielding portion 401 becomes 0%, and the light transmittance in the region where the light-shielding portion 401 or the diffraction grating 402 is not provided can be 100%. In addition, the light transmittance in the diffraction grating 402 is generally in the range of 10% to 70% and can be adjusted by the interval of the slits, dots, or meshes of the diffraction grating. The light transmittance in the diffraction grating 402 is generally in the range of 10% to 70% and can be adjusted by the interval of the slits, dots, or meshes of the diffraction grating. The light transmittance in the diffraction grating 402 is generally in the range of 10% to 70% and can be adjusted by the interval of the slits, dots, or meshes of the diffraction grating.

[0176] The halftone mask 414 shown in Fig. 6(B-1) is composed of a semi-transmissive portion 412 formed by a semi-transmissive layer on a light-transmissive substrate 411 and a light-shielding portion 413 formed by a light-shielding layer. The semi-transmissive portion 412 is composed of layers such as MoSiN, MoSi, MoSiO, MoSiON, CrSi. It is composed of...

[0177] The semi-transmissive portion 412 is composed of layers such as MoSiN, MoSi, MoSiO, MoSiON, CrSi. It can be formed using. The light-shielding portion 413 is the same as the light-shielding layer of the grayscale mask It may be formed using a metal film, and is preferably provided with chromium, chromium oxide, or the like.

[0178] When light for exposing the halftone mask 414 is irradiated, as shown in FIG. 6(B-2), the light transmittance in the region overlapping the light-shielding portion 413 becomes 0%, and the light transmittance in the region where the light-shielding portion 413 or the semi-transmissive light portion 412 is not provided can be 100%. Also, the light transmittance in the semi-transmissive portion 412 is generally in the range of 10% to 70%, and can be adjusted according to the type of material to be formed or the film thickness to be formed.

[0179] As described above, by using a multi-tone mask, masks with three exposure levels, namely an exposed portion, an intermediate exposed portion, and an unexposed portion, can be formed, and a resist mask having regions of a plurality (typically two types) of thicknesses can be formed by a single exposure and development process . Therefore, by using a multi-tone mask, the number of photomasks can be reduced .

[0180] FIG. 7(B) shows a case where a halftone mask is used as a multi-tone mask. The halftone mask is composed of a substrate 180 that transmits light and light-shielding layers 181a, 181c and semi-transmissive layers 181b, 181d provided on the substrate 180. Therefore, conductive films 104 have thick resist masks 171a, thin resist masks 171b, and resist masks 171c having thick and thin portions formed thereon.

[0181] Next, using the resist masks 171a to 171c, the non-uniformity of the conductive film 102 and the conductive film 104 ​Etch the necessary portions to form a conductive layer 102a, a conductive layer 102b, a conductive layer 104a', and a conductive layer 104b' (see Fig. 7(C)).

[0182] Next, perform ashing on the resist masks 171a to 171c using oxygen plasma. By performing ashing on the resist masks 171a to 171c using oxygen plasma, the resist mask 171b is removed, and a part of the conductive layer 1 04a' formed on the conductive layer 102a is exposed. Also, the resist masks 171a and 171c are reduced and remain as resist masks 171a' and 171c' (see Fig. 8(A)). In this way, by using a multi-tone mask as the resist mask, the need for an additional resist mask is eliminated, and the process can be simplified.

[0183] Next, using the resist masks 171a' and 171c', etch the exposed conductive layer 104a' and the conductive layer 104b' to form a conductive layer 104a and a conductive layer 104b (see Fig. 8(B)). In this case, the conductive layer 104a' formed on the conductive layer 102a that functions as the electrode 132 and the conductive layer 104b' provided in the region arranged in the pixel portion in the wiring 124 are removed.

[0184] As a result, the electrode 132 is formed of the conductive layer 102a having translucency, and the wiring 122 is formed of a laminated structure of the conductive layer 102a having translucency and a conductive layer 104a having a lower resistance than the conductive layer 102a.

[0185] In this way, the conductive layer 102a that functions as the electrode 132 is formed of a material having translucency. As a result, the aperture ratio of the pixel portion can be improved. Also, as the conductive layer that functions as wiring 122, by forming it with the conductive layer that constitutes electrode 132 (here, conductive layer 102a) and conductive layer 104a made of a metal material having a lower resistivity than that of the conductive layer 102a, the wiring resistance can be reduced and the waveform distortion can be reduced. As a result, low power consumption can be achieved. Also, as wiring 122, by using a conductive layer having light-shielding properties (here, conductive layer 104a), the region between adjacent pixels can be shielded from light. Therefore, the black matrix can be omitted. However, it is not limited to this. As the conductive layer that functions as such, by forming it with the conductive layer that constitutes electrode 132 (here, conductive layer 102a) and conductive layer 104a made of a metal material having a lower resistivity than that of the conductive layer 102a, the wiring resistance can be reduced and the waveform distortion can be reduced. As a result, low power consumption can be achieved. Also, as wiring 122, by using a conductive layer having light-shielding properties (here, conductive layer 104a), the region between adjacent pixels can be shielded from light. Therefore, the black matrix can be omitted. However, it is not limited to this. .

[0186] Also, by using a multi-tone mask, the conductive layer 102a and the conductive layer 104a that become wiring 122 have different surface areas for each layer. That is, the surface area of the conductive layer 102a is larger than the surface area of the conductive layer 104a. Similarly, the surface area of the conductive layer 102b is larger than the surface area of the conductive layer 104b. That is, the surface area of the conductive layer 102a is larger than the surface area of the conductive layer 104a. Similarly, the surface area of the conductive layer 102b is larger than the surface area of the conductive layer 104b. .

[0187] Next, after forming the insulating layer 106 so as to cover the conductive layer 102a, the conductive layer 102b, the conductive layer 104a, and the conductive layer 104b, the conductive film 108 and the conductive film 110 are sequentially laminated on the insulating layer 106 (see Fig. 8(C)). Next, after forming the insulating layer 106 so as to cover the conductive layer 102a, the conductive layer 102b, the conductive layer 104a, and the conductive layer 104b, the conductive film 108 and the conductive film 110 are sequentially laminated on the insulating layer 106 (see Fig. 8(C)). . (See Fig. 8(C).)

[0188] Next, resist masks 172a to 172d are formed on the conductive film 110 (see Fig. 9(A). )

[0189] By using a multi-tone mask, resist masks having different thicknesses can be formed for the resist masks 172a to 172d. .

[0190] FIG. 9(A) shows a case where a halftone mask is used as a multi-tone mask. In this case, the halftone mask is composed of a substrate 182 that transmits light, and semi-transmissive layers 183a and 183d, and light-shielding layers 183b, 183c, and 183e provided on the substrate 182. Therefore, a thick resist mask 172c, a thin resist mask 172b, 172d, and a resist mask 172a having thick and thin portions are formed on the conductive film 110.

[0191] Next, using the resist masks 172a to 172d, unnecessary portions of the conductive film 108 and the conductive film 110 are etched to form conductive layers 108a to 108c, and conductive layers 110a' to 110c' (see FIG. 9(B)).

[0192] Next, ashing of the resist masks 172a to 172d is performed using oxygen plasma. By performing ashing of the resist masks 172a to 172d using oxygen plasma, the resist masks 172b and 172d are removed, and the conductive layers 110b' and 110c ' are exposed. Also, the resist masks 172a and 172c are reduced and remain as resist masks 17 2a' and 172c' (see FIG. 9(C)). In this way, by using a multi-tone mask as a resist mask, it becomes unnecessary to use an additional resist mask, and thus the process can be simplified.

[0193] Next, by using the resist masks 172a' and 172c', a part of the conductive layer 110a', the conductive layer 110b', and the conductive layer 110c' are etched to form the conductive layer 110a (see FIG. 10(A)). In this case, the conductive layer 110a' formed on the conductive layer 108a Part of the conductive layer 110b' formed on the conductive layer 108b and the conductive layer 110c' formed on the conductive layer 108c are removed. Remove the formed conductive layer 110c' on the conductive layer 108c formed on the conductive layer 108b and part of it.

[0194] As a result, the electrode 136 is formed of the light-transmissive conductive layer 108a, and the wiring 126 is formed of a laminated structure of the light-transmissive conductive layer 108a and the conductive layer 110a having a lower resistance than the conductive layer 108a. Also, the electrode 138 is formed of the light-transmissive conductive layer 108b. By forming the conductive layer 108a functioning as the electrode 136 and the conductive layer 108b functioning as the electrode 138 with a light-transmissive material, the aperture ratio of the pixel portion can be improved. Also, as the conductive layer functioning as the wiring 126, by forming it with the conductive layer (here, the conductive layer 108a) constituting the electrode 136 and the conductive layer 110a using a metal material having a lower resistivity than the conductive layer 108a, the wiring resistance can be reduced and the waveform distortion can be reduced. As a result, low power consumption can be achieved. Also, by using a conductive layer having light-shielding properties (here, the conductive layer 110a) as the wiring 126, the region between adjacent pixels can be shielded from light. Next, an oxide semiconductor film is formed so as to cover the conductive layers 108a and 108b, the insulating layer 106, etc., and then the oxide semiconductor film is etched to form an island-shaped semiconductor layer 112a (see FIG. 10(B)).

[0195] In this way, by forming the conductive layer 108a functioning as the electrode 136 and the conductive layer 108b functioning as the electrode 138 with a light-transmissive material, the aperture ratio of the pixel portion can be improved. Also, as the conductive layer functioning as the wiring 126, by forming it with the conductive layer (here, the conductive layer 108a) constituting the electrode 136 and the conductive layer 110a using a metal material having a lower resistivity than the conductive layer 108a, the wiring resistance can be reduced and the waveform distortion can be reduced. As a result, low power consumption can be achieved. Also, by using a conductive layer having light-shielding properties (here, the conductive layer 110a) as the wiring 126, the region between adjacent pixels can be shielded from light. Next, an oxide semiconductor film is formed so as to cover the conductive layers 108a and 108b, the insulating layer 106, etc., and then the oxide semiconductor film is etched to form an island-shaped semiconductor layer 112a (see FIG. 10(B)). Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. By forming the conductive layer 108a functioning as the electrode 136 and the conductive layer 108b functioning as the electrode 138 with a light-transmissive material, the aperture ratio of the pixel portion can be improved. Also, as the conductive layer functioning as the wiring 126, by forming it with the conductive layer (here, the conductive layer 108a) constituting the electrode 136 and the conductive layer 110a using a metal material having a lower resistivity than the conductive layer 108a, the wiring resistance can be reduced and the waveform distortion can be reduced. As a result, low power consumption can be achieved. Also, by using a conductive layer having light-shielding properties (here, the conductive layer 110a) as the wiring 126, the region between adjacent pixels can be shielded from light. Next, an oxide semiconductor film is formed so as to cover the conductive layers 108a and 108b, the insulating layer 106, etc., and then the oxide semiconductor film is etched to form an island-shaped semiconductor layer 112a (see FIG. 10(B)). Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG.

[0196] Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG.

[0197] Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. Next, an insulating layer 114 is formed so as to cover the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c, and then a conductive layer 116 is formed on the insulating layer 114 (see FIG. 10 (C) Reference). The conductive layer 116 is formed so as to be electrically connected to the conductive layer 108c. .

[0198] Through the above steps, a semiconductor device can be manufactured. By using a multi-tone mask, it is possible to form masks with three exposure levels: an exposed portion, an intermediate exposed portion, and an unexposed portion. With a single exposure and development process, a resist mask having regions of a plurality (typically two types) of thicknesses can be formed. Therefore, by using a multi-tone mask, the number of photomasks can be reduced.

[0199] In this embodiment, the case where a multi-tone mask is used in both the process of forming the gate wiring and the process of forming the source wiring has been described. However, a multi-tone mask may be used in either the process of forming the gate wiring or the process of forming the source wiring.

[0200] (Embodiment 3) In this embodiment, a semiconductor device different from that of the above Embodiment 1 will be described with reference to the drawings. Note that the configuration of the semiconductor device shown below is common to FIGS. 1 and 2 in many parts. Therefore, in the following, overlapping parts will be omitted and different points will be described.

[0201] Other configuration examples of the semiconductor device shown in the above Embodiment 1 are shown in FIGS. 11 and 12. In FIGS. 11 and 12, FIG. 11 shows a top view, FIG. 12(A) corresponds to a cross-section between A and B in FIG. 11, and FIG. 12(B) corresponds to a cross-section between C and D in FIG. 11.

[0202] The semiconductor device shown in FIGS. 11 and 12 is the semiconductor device shown in FIGS. 1 and 2, in which the gate wiring A conductive layer 102a having translucency is laminated and provided on a conductive layer 104a as a line 120, and wiring shows a case where a conductive layer 108a having translucency is laminated and provided on a conductive film 110 as 126. That is, in the structures shown in FIGS. 1 and 2, the gate wiring 120 and the wiring 126 have a configuration in which the lamination structure of the conductive layers is reversed.

[0203] In the configurations shown in FIGS. 11 and 12, an electrode 132 electrically connected to the gate wiring 120 is formed of a conductive layer 102a having translucency, and an electrode 136 electrically connected to the wiring 126 is formed of a conductive layer 108a having translucency.

[0204] In addition to the configurations shown in FIGS. 11 and 12, in the structures shown in FIGS. 1 and 2, the wiring 12 may have a configuration in which the lamination structure of the conductive layer in either one of 2 and the wiring 126 is reversed. Yes.

[0205] Further, in FIGS. 11 and 12, a structure (bottom contact type) in which a semiconductor layer 112a is provided on the electrodes 136 and 138 is shown, but the present invention is not limited to this. For example, a structure (channel etch type) in which the electrodes 136 and 138 are provided on the semiconductor layer 11 2a may be used (see FIG. 47). Note that FIG. 47(A) is a top view, and FIG. 47(B) corresponds to a cross section taken between A and B in FIG. 47(A). 47). Note that FIG. 47(A) is a top view, and FIG. 47(B) corresponds to a cross section taken between A and B in FIG. 47(A). A-B.

[0206] Further, in the structure shown in FIG. 47, a structure (channel protection type) in which an insulating layer 127 that functions as a channel protection film is provided on the semiconductor layer 112a may be used (see FIG. 46(B)). A structure (channel protection type) in which an insulating layer 127 that functions as a channel protection film is provided on the semiconductor layer 112a may be used (see FIG. 46(B)).

[0207] Subsequently, another configuration example of the semiconductor device shown in the above Embodiment 1 is shown in FIG. 13. In FIG. 13 In FIG. 13(A), a top view is shown, and FIG. 13(B) corresponds to the cross-section between A and B in FIG. 13(A).

[0208] The semiconductor device shown in FIG. 13 has a structure in which the semiconductor layer 112a is provided between the conductive layer 108a and the conductive layer 110a that become the wiring 126 in the semiconductor devices shown in FIGS. 1 and 2. That is, after forming the conductive layer 108a, the semiconductor layer 112a is formed before forming the conductive layer 110a.

[0209] As shown in FIG. 13, by providing the semiconductor layer 112a between the conductive layer 108a and the conductive layer 110a, the contact area between the electrode 136 and the wiring 126 and the semiconductor layer 112a can be increased, and the contact resistance can be reduced.

[0210] Subsequently, another configuration example of the semiconductor device shown in the above Embodiment 1 is shown in FIG. 14. In FIG. 14, FIG. 14(A) shows a top view, and FIG. 14(B) corresponds to the cross-section between C and D in FIG. 14(A).

[0211] The semiconductor device shown in FIG. 14 has a structure in which a conductive layer having a light-shielding property (here, the conductive layer 104b) is provided in a region located below the contact hole 125 formed when connecting the conductive layer 108c and the conductive layer 116 that become the electrodes of the holding capacitor portion 154 in the wiring 124. That is, the configuration shown in FIG. 14 has a structure in which, in the configuration shown in FIGS. 1 and 2, in the region where the pixel portion 150 is provided, the wiring 124 is also provided with a laminated structure of the conductive layer 102b having a light-transmitting property and the conductive layer 104b having a lower resistance and a light-shielding property than the conductive layer 102b.

[0212] ​​​​​​​​​​​Normally, when the conductive layer 108c and the conductive layer 116 are electrically connected through the contact hole 125, a recess is formed on the surface of the conductive layer 116 due to the contact hole 125. As a result, the alignment of the liquid crystal molecules provided on the recess of the conductive layer 116 may be disturbed, causing light leakage.

[0213] Therefore, as shown in FIG. 14, by selectively forming a light-shielding film below the contact hole 125, it is possible to reduce light leakage due to the recess on the surface of the conductive layer 116. Also, as the light-shielding film, using the conductive layer 104b having a lower resistance than the conductive layer 102b can reduce the resistance of the wiring 124. Further, as shown in FIG. 14, by concentrating and providing the position where the contact hole 125 is formed at one end of the wiring 124, and also providing the conductive layer 104b on one end side of the wiring 124, the aperture ratio of the pixel portion 150 can be improved.

[0214] Note that the shape of the conductive layer 104b is not limited to the shape shown in FIG. 14(A) as long as it is disposed below the contact hole 125. When it is desired to reduce light leakage and also reduce the wiring resistance of the wiring 124, as shown in FIG. 14, the conductive layer 104b may be provided by extending it in a direction parallel to the wiring 124. In this case, as described above, by concentrating and providing the contact hole 125 on one end side of the wiring 124 and also providing the conductive layer 104b on one end side of the wiring 124, the aperture ratio of the pixel portion 150 can be improved.

[0215] Also, when it is desired to reduce light leakage and further improve the aperture ratio of the pixel portion 150, ​​​Rather than electrically connecting the conductive layer 104b in a direction parallel to the line 124, island-shaped conductive layers 104b may be provided in regions overlapping with the contact holes 125, respectively (see FIGS. 15(A) and (B)). In FIG. 15, FIG. 15(A) shows a top view, and FIG. 15(B) corresponds to a cross section taken between C and D in FIG. 15(A). Also, as shown in FIG. 15, a light-shielding film may be provided below the contact hole 125 formed in the wiring 124, and a light-shielding film may also be provided below the contact holes formed in regions other than the wiring 124 (regions where the conductive layer 108b and the conductive layer 116 are continuous). Subsequently, another configuration example of the semiconductor device shown in the above Embodiment 1 is shown in FIG. 16. In FIG. 16, FIG. 16(A) shows a top view, and FIG. 16(B) corresponds to a cross section taken between A and B in FIG. 16(A). (B) corresponds to the cross section between C and D in FIG. 15(A).

[0216] Also, as shown in FIG. 15, a light-shielding film may be provided below the contact hole 125 formed in the wiring 124, and a light-shielding film may also be provided below the contact holes formed in regions other than the wiring 124 (regions where the conductive layer 108b and the conductive layer 116 are continuous). Below the contact hole formed in the region other than the wiring 124 (the region where the conductive layer 108b and the conductive layer 116 are continuous), a light-shielding film may be provided. Subsequently, another configuration example of the semiconductor device shown in the above Embodiment 1 is shown in FIG. 16. In FIG. 16, FIG. 16(A) shows a top view, and FIG. 16(B) corresponds to a cross section taken between A and B in FIG. 16(A).

[0217] Subsequently, another configuration example of the semiconductor device shown in the above Embodiment 1 is shown in FIG. 16. In FIG. 16, FIG. 16(A) shows a top view, and FIG. 16(B) corresponds to a cross section taken between A and B in FIG. 16(A). In FIG. 16, FIG. 16(A) shows a top view, and FIG. 16(B) corresponds to a cross section taken between A and B in FIG. 16(A). (B) corresponds to the cross section between A and B in FIG. 16(A).

[0218] The semiconductor device shown in FIG. 16 is configured such that high-conductivity regions (n+ regions 113a, 113b) are provided in a part of the semiconductor layer 112a, and the electrodes 136 and 138 are provided so as not to overlap with the electrode 132. The n+ regions 113a, 113b can be provided in the semiconductor layer 112a in regions connected to the electrode 136 and regions connected to the electrode 138. Note that the n+ regions 113a, 113b may be provided so as to overlap with the electrode 132 or may be provided so as not to overlap with the electrode 132. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity.

[0219] The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. The n+ regions 113a, 113b can be formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity. Hydrogen may be added to the part of the semiconductor layer 112a where it is desired to increase the conductivity.

[0220] For example, a semiconductor layer 112a is formed using an oxide semiconductor containing In, M, or Zn, etc. After that, a resist mask 168 is formed on a part of the semiconductor layer 112a (see Fig. 36(A)). By adding hydrogen ions, n+ regions 113a and 113b can be formed in the semiconductor layer 112a (see Fig. 36(B)).

[0221] In this way, by providing the electrodes 136 and 138 so as not to overlap with the electrode 132, the parasitic capacitance generated between the electrodes 136 and 138 and the electrode 132 can be suppressed.

[0222] Note that in the above-described configuration, the case where the upper surface shape of the channel formation region formed between the source and the drain in the structure of the transistor 152 is a parallel type is shown, but it is not limited to this. Alternatively, as shown in Fig. 17, a transistor in which the top view of the channel formation region is C-shaped (U-shaped) may also be used. In this case, the conductive layer 108a that functions as the electrode 136 is formed in a C-shape or a U-shape, and the conductive layer 108a is arranged so as to surround the conductive layer 108b that functions as the electrode 138. By adopting such a configuration, the channel width of the transistor 15 2 can be increased.

[0223] Also, in the above-described configuration, the case where the semiconductor layer 112a is provided on the electrode 132 electrically connected to the wiring 122 is shown, but it is not limited to this. Alternatively, as shown in Fig. 21, a configuration in which the semiconductor layer 112a is provided on the wiring 122 may also be used. In this case, the wiring 122 also functions as a gate electrode. Further, the wiring 122 is provided with a conductive layer 104a having a low resistance. It is possible. Of course, the wiring 122 may be provided in a laminated structure of the conductive layer 102a having translucency and the conductive layer 104a. Further, the conductive layer 104a may be a conductive layer having light-shielding properties. By doing so, it is possible to suppress light from irradiating the semiconductor layer 112a that becomes the channel formation region. This configuration is effective when a material whose characteristics are affected by light is used as the semiconductor layer for forming the channel.

[0224] Also, as shown in FIG. 37, the wiring 122 may be formed only of the conductive layer 104a. Further, the wiring 126 may be formed only of the conductive layer 110a. Also, the wiring 124 may be formed only of the conductive layer 104b.

[0225] Also, as shown in FIG. 38, in the wiring 122, a configuration in which the conductive layer 108a is selectively provided in a part (a part used as the electrode 132 of the transistor 152) may be adopted. Similarly, in the wiring 126, a configuration in which the conductive layer 110a is selectively provided in a part (a part used as the electrode 136 of the transistor 152) may be adopted.

[0226] Note that in FIG. 38, the case where the conductive layer 102a is provided below the conductive layer 104a is shown, but a configuration in which the conductive layer 102a is provided on the conductive layer 104a may also be adopted (see FIG. 39). Similarly, a configuration in which the conductive layer 108a is provided on the conductive layer 110a may also be adopted (see FIG. 39).

[0227] Also, in the above-described configuration, the case where the holding capacitor portion 154 is provided using the wiring 124 is shown, but it is not limited to this. As shown in FIG. 40, without providing the wiring 124, a configuration in which the conductive layer 108c and the conductive layer 102a constituting the wiring 122 of an adjacent pixel are used as the electrodes of the holding capacitor portion 154 may be adopted. ​​​​​​​

[0228] Note that in FIGS. 13 to 17 and FIGS. 37 to 40, a structure (bottom contact type) in which a semiconductor layer 112a is provided on the electrodes 136 and 138 is shown, but it is not limited thereto. As shown in FIGS. 45 to 47, a structure (channel etch type) in which the electrodes 136 and 138 are provided on the semiconductor layer 112a may be used, or a structure (channel protection type) in which an insulating layer 127 that functions as a channel protection film is provided on the semiconductor layer 112a may be used.

[0229] (Embodiment 4) In this embodiment, a semiconductor device different from those in the above-described Embodiments 1 and 2 will be described with reference to the drawings. Specifically, a case where a plurality of transistors are provided in one pixel portion will be described. Note that the configuration of the semiconductor device described below is common to FIGS. 1 and 2 in many parts. Therefore, in the following description, overlapping parts will be omitted, and different points will be described.

[0230] A configuration example of the semiconductor device shown in this embodiment is shown in FIGS. 18 and 19. In FIGS. 18 and 19, FIG. 18 shows a top view, FIG. 19(A) corresponds to a cross-section taken along line A-B in FIG. 18, and FIG. 19(B) corresponds to a cross-section taken along line C-D in FIG. 18.

[0231] The semiconductor device shown in FIGS. 18 and 19 includes a pixel portion 150 provided with a switching transistor 152, a driving transistor 156, and a holding capacitor portion 158, wiring 122, wiring 126, and wiring 128. The configuration shown in FIGS. 18 and 19 can be applied to, for example, a pixel portion of an EL display device.

[0232] ​​​Transistor 156 has an electrode 232 provided on substrate 100, an insulating layer 106 provided on electrode 232, electrodes 236 and 238 provided on insulating layer 106, and a semiconductor layer 112b provided on insulating layer 106 so as to overlap electrode 232 and provided on electrodes 236 and 238. Note that electrode 232 can function as a gate electrode. Electrode 236 or electrode 238 can function as a source electrode or a drain electrode. Semiconductor layer 112b can be provided as an oxide semiconductor. Wiring 128 can function as a power supply line. However, it is not limited thereto. Electrode 232 is provided with a conductive layer 102c having translucency and is electrically connected to electrode 138 (conductive layer 108b) of transistor 152. The electrical connection between conductive layer 108b and conductive layer 102c can be made via conductive layer 117. In addition, conductive layer 117 can be formed in the same process as conductive layer 116. That is, after forming insulating layer 114, after forming contact hole 118a reaching conductive layer 108b and contact hole 118b reaching conductive layer 102c, conductive layer 116 and conductive layer 117 are formed on insulating layer 114. Contact hole 118a and contact hole 118b can be formed in the same process (same etching process).

[0233] Electrode 232 can be formed in the same process as conductive layer 102a. Semiconductor layer 112b can be formed in the same process as semiconductor layer 112a. Electrode 232 can function as a gate electrode. Electrode 236 or electrode 238 can function as a source electrode or a drain electrode. Semiconductor layer 112b can be provided as an oxide semiconductor. Wiring 128 can function as a power supply line. However, it is not limited thereto. Electrode 232 is provided with a conductive layer 102c having translucency and is electrically connected to electrode 138 (conductive layer 108b) of transistor 152. The electrical connection between conductive layer 108b and conductive layer 102c can be made via conductive layer 117.

[0234] In addition, conductive layer 117 can be formed in the same process as conductive layer 116. That is, after forming insulating layer 114, after forming contact hole 118a reaching conductive layer 108b and contact hole 118b reaching conductive layer 102c, conductive layer 116 and conductive layer 117 are formed on insulating layer 114. Contact hole 118a and contact hole 118b can be formed in the same process (same etching process). Electrode 232 can be formed in the same process as conductive layer 102a. Semiconductor layer 112b can be formed in the same process as semiconductor layer 112a.

[0235] Electrode 232 can be formed in the same process as conductive layer 102a. Semiconductor layer 112b can be formed in the same process as semiconductor layer 112a. Electrode 232 can function as a gate electrode. Electrode 236 or electrode 238 can function as a source electrode or a drain electrode. Semiconductor layer 112b can be provided as an oxide semiconductor. Wiring 128 can function as a power supply line. However, it is not limited thereto. Electrode 232 is provided with a conductive layer 102c having translucency and is electrically connected to electrode 138 (conductive layer 108b) of transistor 152. The electrical connection between conductive layer 108b and conductive layer 102c can be made via conductive layer 117. In addition, conductive layer 117 can be formed in the same process as conductive layer 116. That is, after forming insulating layer 114, after forming contact hole 118a reaching conductive layer 108b and contact hole 118b reaching conductive layer 102c, conductive layer 116 and conductive layer 117 are formed on insulating layer 114. Contact hole 118a and contact hole 118b can be formed in the same process (same etching process).

[0236] Electrode 232 can be formed in the same process as conductive layer 102a.

[0237] Semiconductor layer 112b can be formed in the same process as semiconductor layer 112a.

[0238] The electrode 236 is provided by the conductive layer 108d having translucency, and is electrically connected to the wiring 128. The wiring 128 is provided in a laminated structure of the conductive layer 108d and the conductive layer 110b. Also, the conductive layer 108d constituting the electrode 236 and the conductive layer 108d constituting the wiring 128 are formed on the same island.

[0239] In FIGS. 18 and 19, the case where the conductive layer 110b is laminated on the conductive layer 108d is shown as the wiring 128, but the conductive layer 108d may be laminated on the conductive layer 110b.

[0240] Also, the electrode 238 is provided by the conductive layer 108e having translucency, and is electrically connected to the conductive layer 116.

[0241] The conductive layer 108d and the conductive layer 108e can be formed in the same process as the conductive layer 108a and the conductive layer 108b. Also, the conductive layer 110b can be formed in the same process as the conductive layer 110a.

[0242] The holding capacitor portion 158 is configured with the insulating layer 106 as a dielectric, the conductive layer 102c having translucency, and the conductive layer 108d having translucency as electrodes. Also, the conductive layer 102c is electrically connected to the electrode 138 of the transistor 152.

[0243] As described above, by forming the transistor 152, the transistor 156, and the holding capacitor portion 158 with a material having translucency, light can be transmitted through the regions where the transistors 152 and 156 are formed and the region where the holding capacitor portion 158 is formed. Therefore, in the pixel portion ​​​​​The aperture ratio of 150 can be improved. Also, part of wiring 122, wiring 126, and wiring 128 is provided with a conductive layer made of a metal material having a low resistivity, thereby reducing the wiring resistance and reducing the power consumption.

[0244] Also, the conductive layer 104a constituting the gate wiring, the conductive layer 110a constituting the source wiring, and the conductive layer 110b constituting the wiring 128 are formed using a metal material having light-shielding properties to reduce the wiring resistance and shield light between adjacent pixel portions. Thus the gap between pixels can be shielded by the gate wiring arranged in the row direction, the source wiring arranged in the column direction, and the wiring 128 without using a black matrix. .

[0245] Note that in FIGS. 18 and 19, the case where the electrical connection between the conductive layer 108b and the conductive layer 102c is made via the conductive layer 1 17 is shown, but it is not limited to this. For example, as shown in FIG. 20, the conductive layer 102c and the conductive layer 108b may be electrically connected via a contact hole 119 formed in the insulating layer 106. In this case, after forming the contact hole 119 in the insulating layer 106 , the conductive layer 108b may be formed. In the structure shown in FIG. 20, the conductive layer 116 can also be arranged above the connection region between the conductive layer 108b and the conductive layer 102c. Also, in this embodiment, the case where two transistors are provided in the pixel portion 150 is shown, but

[0246] it is not limited to this. Three or more transistors can also be arranged in parallel or in series .

[0247] In this embodiment, the case where the structure of the transistor is a bottom contact type is shown ​is not limited to this. The structure of the transistor may be a channel etch type or a channel protection type.

[0248] (Embodiment 5) In this embodiment, in a display device which is a form of a semiconductor device, when at least a part of a drive circuit and a pixel portion are provided using thin film transistors on the same substrate, it will be described below.

[0249] An example of a block diagram of an active matrix liquid crystal display device which is an example of a display device is shown in Fig. 22 (A). The display device shown in Fig. 22(A) has a pixel portion 5301 having a plurality of pixels provided with display elements on a substrate 5300, a scanning line drive circuit 5302 for selecting each pixel, and a signal line drive circuit 5303 for controlling the input of a video signal to the selected pixel.

[0250] The light-emitting display device shown in Fig. 22(B) has a pixel portion 5401 having a plurality of pixels provided with display elements on a substrate 5400, a first scanning line drive circuit 5402 and a second scanning line drive circuit 5404 for selecting each pixel, and a signal line drive circuit 5 403 for controlling the input of a video signal to the selected pixel.

[0251] When the video signal input to the pixel of the light-emitting display device shown in Fig. 22(B) is in digital format, the pixel becomes a light-emitting or non-light-emitting state by switching on and off of the transistor. Therefore, gradation display can be performed using an area gradation method or a time gradation method. The area gradation method is a driving method for performing gradation display by dividing one pixel into a plurality of sub-pixels and driving each sub-pixel independently based on a video signal. The time gradation method is a method in which a pixel emits light It is a driving method for performing gradation display by controlling the period.

[0252] Since the light-emitting element has a higher response speed than a liquid crystal element, etc., it is more suitable for the time gradation method than a liquid crystal element. When performing display by the time gradation method, one frame period is divided into a plurality of sub-frame periods. Then, according to the video signal, the light-emitting element of the pixel is made to emit light or not emit light in each sub-frame period. By dividing into a plurality of sub-frame periods, the total length of the period during which the pixel emits light during one frame period can be controlled by the video signal, and gradation can be displayed. In the light-emitting display device shown in FIG. 22(B), it is a case where two switching TFTs are arranged for one pixel, and the signal input to the first scanning line, which is the gate wiring of one of the switching TFTs, is generated by the first scanning line driving circuit 5402, and the signal input to the second scanning line, which is the gate wiring of the other switching TFT, is generated by the second scanning line driving circuit 5404. However, the signal input to the first scanning line and the signal input to the second scanning line may both be generated by one scanning line driving circuit. Also, for example, depending on the number of switching TFTs that one pixel has, a plurality of scanning lines may be provided for each pixel to control the operation of the switching element. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit.

[0253] In addition, in the light-emitting display device shown in FIG. 22(B), it is a case where two switching TFTs are arranged for one pixel, and the signal input to the first scanning line, which is the gate wiring of one of the switching TFTs, is generated by the first scanning line driving circuit 5402, and the signal input to the second scanning line, which is the gate wiring of the other switching TFT, is generated by the second scanning line driving circuit 5404. However, the signal input to the first scanning line and the signal input to the second scanning line may both be generated by one scanning line driving circuit. Also, for example, depending on the number of switching TFTs that one pixel has, a plurality of scanning lines may be provided for each pixel to control the operation of the switching element. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit. The signal input to the first scanning line, which is the gate wiring of one of the switching TFTs, is generated by the first scanning line driving circuit 5402, and the signal input to the second scanning line, which is the gate wiring of the other switching TFT, is generated by the second scanning line driving circuit 5404. However, the signal input to the first scanning line and the signal input to the second scanning line may both be generated by one scanning line driving circuit. In addition, for example, depending on the number of switching TFTs that one pixel has, a plurality of scanning lines may be provided for each pixel to control the operation of the switching element. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit. Also, for example, depending on the number of switching TFTs that one pixel has, a plurality of scanning lines may be provided for each pixel to control the operation of the switching element. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit. In this case, the signals input to the plurality of scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of each scanning line driving circuit.

[0254] The thin film transistor arranged in the pixel portion of the liquid crystal display device is formed according to Embodiments 1 to 4. It is possible. Also, the thin film transistors shown in Embodiments 1 to 4 are n-channel type TFTs Therefore, in the driving circuit, a part of the driving circuit that can be composed of n-channel type TFTs is formed on the same substrate as the thin film transistor in the pixel portion.

[0255] Also, in the light-emitting display device, a part of the driving circuit that can be composed of n-channel type TFTs can be formed on the same substrate as the thin film transistor in the pixel portion. In addition, the signal line driving circuit and the scanning line driving circuit can be fabricated only with the n-channel type TFTs shown in Embodiments 1 to 4.

[0256] Note that in the peripheral driving circuit portions such as the protection circuit, the gate driver, and the source driver, there is no need to transmit light through the transistors. Therefore, the pixel portion transmits light through the transistors and capacitive elements, and in the peripheral driving circuit portion, it is not necessary to transmit light through the transistors.

[0257] FIG. 23(A) shows the driving portion and the thin film transistors in the pixel portion when the thin film transistors are formed without using a multi-tone mask, and FIG. 23(B) shows the driving portion and the thin film transistors in the pixel portion when formed using a multi-tone mask.

[0258] When forming the thin film transistors without using a multi-tone mask, in the transistors in the driving portion, a conductive layer 104a having a higher conductivity than the conductive layer 102a is used as the gate electrode, and a conductive layer 110a having a higher conductivity than the conductive layer 108a is used as the source electrode and the drain electrode. In addition, in the driving portion, the gate wiring can be provided with the conductive layer 104a, and the source wiring can be provided with the conductive layer 110a. ​

[0259] When forming a thin film transistor using a multi-tone mask, in the transistor of the driving section, it is provided with a laminated structure of conductive layer 102a and conductive layer 104a as the gate electrode, and as the source electrode it is provided with a laminated structure of conductive layer 108a and conductive layer 110a, and as the drain electrode, it can be provided with a laminated structure of conductive layer 10 8b and conductive layer 110a.

[0260] Note that in FIG. 23, the transistor in the pixel section may have the configuration shown in the above embodiment. and so on.

[0261] Also, the above-described driving circuit is not limited to a liquid crystal display device or a light-emitting display device, and may be used for an electronic paper that drives electronic ink using an element electrically connected to a switching element. The electronic paper is also called an electrophoretic display device (electrophoretic display), can achieve the same readability as paper, suppress power consumption compared to other display devices, and can be made thin and light. The present embodiment can be implemented in appropriate combination with the configurations described in other embodiments. and so on. and so on.

[0262] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. and so on.

[0263] (Embodiment 6) In this embodiment, a case of manufacturing a semiconductor device (also referred to as a display device) having a display function using a thin film transistor in a pixel section and further in a driving circuit will be described. Also, a thin film transistor can be integrally formed on the same substrate as the pixel section for a part or the whole of the driving circuit to form a system on-panel. and so on. and so on.

[0264] The display device includes a display element. As the display element, a liquid crystal element (also referred to as a liquid crystal display element), a light-emitting Elements (also referred to as light-emitting display elements) can be used. The light-emitting element includes, in its category, an element whose luminance is controlled by current or voltage. Specifically, it includes inorganic EL (Electro Luminescence) elements, organic EL elements, etc. In addition, electronic ink or a display medium whose contrast changes due to an electrical action can also be applied. Furthermore, the display device includes a panel in a state where the display element is sealed, and a module in a state where an IC including a controller is mounted on the panel. Further, the display device relates to an element substrate corresponding to a form before the display element is completed in the process of manufacturing the display device. The element substrate includes means for supplying current to the display element for each of a plurality of pixels. The element substrate may specifically be in a state where only the pixel electrode of the display element is formed, or may be in a state after forming a conductive film to form the pixel electrode and before etching to form the pixel electrode, and any form is applicable.

[0265] Note that the display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible Printed Circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or TCP, or a module in which an IC (integrated circuit) is directly mounted on the display element by the COG (Chip On Glass) method is also included in the display device. In the process of manufacturing the display device, with respect to the element substrate corresponding to a form before the display element is completed, the element substrate includes means for supplying current to the display element for each of a plurality of pixels. The element substrate may specifically be in a state where only the pixel electrode of the display element is formed, or may be in a state after forming a conductive film to form the pixel electrode and before etching to form the pixel electrode, and any form is applicable. That is, it may be in a state where only the pixel electrode of the display element is formed, or may be in a state after forming a conductive film to form the pixel electrode and before etching to form the pixel electrode, and any form is applicable. After forming a conductive film to form the pixel electrode and before etching to form the pixel electrode, it may also be in a state, and any form is applicable. All forms are applicable.

[0266] Note that the display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a connector, for example, an FPC (Flexible Printed Circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached to the module, a module in which a printed wiring board is provided at the tip of the TAB tape or TCP, or an IC (integrated circuit) is directly mounted on the display element by the COG (Chip On Glass) method is also included in the display device. A module to which a connector, for example, an FPC (Flexible Printed Circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or TCP, or an IC (integrated circuit) is directly mounted on the display element by the COG (Chip On Glass) method is also included in the display device. That is, all modules in which an IC (integrated circuit) is directly mounted on the display element by the COG (Chip On Glass) method are also included in the display device.

[0267] In this embodiment, a liquid crystal display device is shown as an example of the semiconductor device. The appearance and cross section of a liquid crystal display panel corresponding to this embodiment will be described with reference to FIG. The semiconductor layer is an In-Ga-Zn-O-based non-single crystal film formed on a first substrate 4001. The thin film transistors 4010 and 4011 and the liquid crystal element 4013 are highly reliable. FIG. 4 is a top view of a panel sealed between a second substrate 4006 and the panel by a sealant 4005. FIG. 24(B) corresponds to a cross-sectional view taken along line MN in FIG. 24(A1) and (A2).

[0268] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In this manner, a sealant 4005 is provided. A second substrate 4006 is provided on the path 4004. The line driver circuit 4004 is made up of a first substrate 4001, a sealant 4005, and a second substrate 4006. The liquid crystal layer 4008 is sealed together with the first substrate 4001. In a region different from the region surrounded by the material 4005, a single crystal is formed on a separately prepared substrate. A signal line driver circuit 4003 formed of a semiconductor film or a polycrystalline semiconductor film is mounted.

[0269] The method of connecting the separately formed drive circuit is not particularly limited, and may be a COG method, A wire bonding method, a TAB method, or the like can be used. FIG. 24(A2) shows an example of mounting a signal line driver circuit 4003 by the COG method. This is an example in which a signal line driver circuit 4003 is mounted by the TAB method.

[0270] Also, the pixel portion 4002 provided on the first substrate 4001 and the scanning line driving circuit 4004 each have a plurality of thin film transistors. In FIG. 24(B), the thin film transistor 4010 included in the pixel portion 4002 and the thin film transistor 401 1 included in the scanning line driving circuit 4004 are illustrated. Insulating layers 4020 and 40 21 are provided on the thin film transistors 4010 and 4011.

[0271] The thin film transistors 4010 and 4011 can be applied with highly reliable thin film transistors including an In-Ga-Zn-O based non-single crystal film as a semiconductor layer. In the present embodiment , the thin film transistors 4010 and 4011 are n-channel type thin film transistors.

[0272] Also, the pixel electrode layer 4030 included in the liquid crystal element 4013 is electrically connected to the thin film transistor 4010. And the counter electrode layer 4031 of the liquid crystal element 4013 is formed on the second substrate 40 06. The portion where the pixel electrode layer 4030, the counter electrode layer 4031, and the liquid crystal layer 4008 overlap corresponds to the liquid crystal element 4013. Note that insulating layers 4032 and 4033 that function as alignment films are provided on the pixel electrode layer 4030 and the counter electrode layer 4031, respectively, and the liquid crystal layer 4008 is sandwiched via the insulating layers 4032 and 4033.

[0273] Note that as the first substrate 4001 and the second substrate 4006, glass, metal (typically stainless steel), ceramics, or plastic can be used. As the plastic , an FRP (Fiberglass-Reinforced Plastics) plate, PV F (polyvinyl fluoride) film, a polyester film, a polyester film can be used. Alternatively, an acrylic resin film can be used. Also, a sheet having a structure in which an aluminum foil is sandwiched between a PVF film or a polyester film can be used.

[0274] Further, 4035 is a columnar spacer obtained by selectively etching an insulating film, and is provided to control the distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031. Note that a spherical spacer may be used. Also, the counter electrode layer 403 1 is electrically connected to a common potential line provided on the same substrate as the thin film transistor 4010. Using a common connection portion, the counter electrode layer 4 031 and the common potential line can be electrically connected via conductive particles disposed between a pair of substrates. Note that the conductive particles are incorporated into the sealing material 4 005.

[0275] Alternatively, a liquid crystal exhibiting a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the cholesteric liquid crystal transitions from the cholesteric phase to the isotropic phase when the temperature is raised. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with 5 wt% or more of a chiral agent is used for the liquid crystal layer 4008 in order to improve the temperature range. The liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed as short as 10 μs to 100 μs, is optically isotropic, does not require alignment treatment, and has little viewing angle dependence.

[0276] Note that the liquid crystal display device shown in this embodiment is an example of a transmissive liquid crystal display device, but the liquid crystal display device can be applied to a reflective liquid crystal display device or a transflective liquid crystal display device.

[0277] In the liquid crystal display device shown in this embodiment, a polarizing plate is provided on the outside (viewing side) of the substrate, and an example is shown in which a colored layer and an electrode layer used for the display element are provided in this order on the inside. However, the polarizing plate may be provided on the inside of the substrate. Also, the laminated structure of the polarizing plate and the colored layer is not limited to this embodiment, and may be appropriately set according to the materials and manufacturing process conditions of the polarizing plate and the colored layer. Further, a light-shielding film that functions as a black matrix may be provided. An example is shown in which it is provided in the order of a colored layer on the inner side and an electrode layer used for the display element. However, the polarizing plate may be provided on the inner side of the substrate. Also, the laminated structure of the polarizing plate and the colored layer is not limited to this embodiment, and may be appropriately set according to the materials and manufacturing process conditions of the polarizing plate and the colored layer. Further, a light-shielding film that functions as a black matrix may be provided.

[0278] In this embodiment, in order to reduce the surface unevenness of the thin film transistor and improve the reliability of the thin film transistor, the thin film transistor is covered with an insulating layer (insulating layer 4020, insulating layer 4021) that functions as a protective film and a planarizing insulating film. The protective film is for preventing the intrusion of contaminating impurities such as organic substances, metal substances, and water vapor floating in the air, and a dense film is preferable. The protective film may be formed as a single layer or a laminate of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film using a sputtering method. In this embodiment, an example of forming the protective film by a sputtering method is shown, but it is not particularly limited and may be formed by various methods. The protective film is for preventing the intrusion of contaminating impurities such as organic substances, metal substances, and water vapor floating in the air, and a dense film is preferable. The protective film may be formed as a single layer or a laminate of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film using a sputtering method. In this embodiment, an example of forming the protective film by a sputtering method is shown, but it is not particularly limited and may be formed by various methods.

[0279] Here, an insulating layer 4020 having a laminated structure is formed as the protective film. Here, a silicon oxide film is formed as the first layer of the insulating layer 4020 using a sputtering method. When a silicon oxide film is used as the protective film, it is effective in preventing the hillock of the aluminum film used as the source electrode layer and the drain electrode layer. When a silicon oxide film is used as the protective film, it is effective in preventing the hillock of the aluminum film used as the source electrode layer and the drain electrode layer.

[0280] Also, an insulating layer is formed as the second layer of the protective film. Here, as the second layer of the insulating layer 4020, Then, a silicon nitride film is formed using a sputtering method. The silicon nitride film is used as a protective film. When the silicon nitride film is used, it is possible to suppress the intrusion of mobile ions such as sodium into the semiconductor region and the change in the electrical characteristics of the TFT.

[0281] Also, after forming the protective film, annealing (300°C to 400°C) of the semiconductor layer may be performed.

[0282] Also, an insulating layer 4021 is formed as a planarization insulating film. As the insulating layer 4021, heat-resistant organic materials such as polyimide, acrylic, benzocyclobutene, polyamide, and epoxy can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane resins, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), etc. can be used. Note that the insulating layer 4021 may be formed by laminating a plurality of insulating films formed of these materials.

[0283] The siloxane resin corresponds to a resin containing an Si-O-Si bond formed using a siloxane-based material as a starting material. As substituents of the siloxane resin, an organic group (for example, an alkyl group or an aryl group) or a fluoro group may be used. Also, the organic group may have a fluoro group.

[0284] The method for forming the insulating layer 4021 is not particularly limited, and depending on the material, a sputtering method, a SOG method, spin coating, dipping, spray coating, a droplet discharge method (inkjet method, screen printing, offset printing, etc.), a doctor knife, a roll coater, a curtain coater, a knife coater, etc. can be used. When the insulating layer 4021 is formed using a material solution, At the same time in the step of baking, annealing of the semiconductor layer (300 ° C to 400 ° C) may be performed. Absolutely By combining the baking process of the insulating layer 4021 and the annealing of the semiconductor layer, a semiconductor device can be efficiently manufactured It becomes possible.

[0285] The pixel electrode layer 4030 and the counter electrode layer 4031 are indium oxide containing tungsten oxide , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Indium zinc oxide, indium tin oxide added with silicon oxide, etc., having translucency A conductive material can be used.

[0286] Further, as the pixel electrode layer 4030 and the counter electrode layer 4031, they can be formed using a conductive composition containing a conductive polymer (also referred to as a conductive polymer ). The pixel electrode formed using the conductive composition preferably has a light transmittance of 70% or more at a wavelength of 550 nm. Also, the resistivity of the conductive polymer contained in the conductive composition is preferably 0.1 Ω·cm or less. Preferably.

[0287] As the conductive polymer, so-called π - electron conjugated system conductive polymers can be used. For example polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or copolymers of two or more of these can be mentioned.

[0288] Also, various signals and potentials given to the separately formed signal line driving circuit 4003 and the scanning line driving circuit 4004 or the pixel portion 4 002 are supplied from the FPC4018.

[0289] In this embodiment, the connection terminal electrode 4015 is formed of the same conductive film as the pixel electrode layer 40 30 included in the liquid crystal element 4013, and the terminal electrode 4016 is formed of the same conductive film as the source electrode layer and the drain electrode layer of the thin film transistors 4010 and 40 11.

[0290] The connection terminal electrode 4015 is electrically connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019 ..

[0291] Also, in FIG. 24, an example is shown in which the signal line driving circuit 4003 is separately formed and mounted on the first substrate 4001. However, this embodiment is not limited to this configuration. The scanning line driving circuit may be separately formed and mounted, or a part of the signal line driving circuit or a part of the scanning line driving circuit may be separately formed and mounted.

[0292] FIG. 25 shows an example of a configuration of a liquid crystal display module corresponding to one form of a semiconductor device using the TFT substrate 2600 ..

[0293] FIG. 25 is an example of a liquid crystal display module. The TFT substrate 2600 and the counter substrate 2601 are fixed by a sealing material 2602, and an element layer 2603 including TFTs and the like, a display element 2604 including a liquid crystal layer, and a coloring layer 2605 are provided therebetween to form a display area. The coloring layer 2605 is necessary when performing color display. In the case of the RGB system, coloring layers corresponding to each color of red, green, and blue are provided corresponding to each pixel. Outside the TFT substrate 2600 and the counter substrate 2601 polarizing plates 2606, 2607, and a diffusion plate 2613 are disposed. The light source is composed of a cold cathode tube 2610 and a reflector 2611, and the circuit board 2612 is a flexible circuit .. board. board 2612 is a flexible circuit board. The wiring circuit portion 2608 of the TFT substrate 2600 is connected by the wiring substrate 2609, and external circuits such as a control circuit and a power supply circuit are incorporated. Also, it may be laminated in a state having a retardation plate between the polarizing plate and the liquid crystal layer. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. With the above steps, a highly reliable liquid crystal display device can be fabricated as a semiconductor device.

[0294] The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc. The liquid crystal display module may use a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment), an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal), etc.

[0295] With the above steps, a highly reliable liquid crystal display device can be fabricated as a semiconductor device.

[0296] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0297] (Embodiment 7) In this embodiment, an electronic paper is shown as an example of a semiconductor device.

[0298] FIG. 26 shows an active matrix type electronic paper as an example of a semiconductor device. As the thin film transistor 581 used in the body device, it can be fabricated in the same manner as the thin film transistor shown in the above-described Embodiments 1 to 3.

[0299] The electronic paper in FIG. 26 is an example of a display device using a twist ball display method. Twist The ball display method is a method in which spherical particles painted white and black are disposed between a first electrode layer and a second electrode layer which are electrode layers using the display element, and a potential difference is generated between the first electrode layer and the second electrode layer, thereby controlling the orientation of the spherical particles to perform display.

[0300] The thin film transistor 581 provided on the substrate 580 is a thin film transistor having a bottom gate structure, and the source electrode layer or the drain electrode layer is electrically connected to the first electrode layer 587 through contact holes formed in the insulating layers 583, 584, and 585. Between the first electrode layer 587 and the second electrode layer 588, spherical particles 589 having black regions 590a and white regions 590b and surrounded by a liquid-filled cavity 594 are provided, and a filler 595 such as resin is provided around the spherical particles 589 (see FIG. 26). In FIG. 26, the first electrode layer 587 corresponds to a pixel electrode, and the second electrode layer 588 corresponds to a common electrode. The second electrode layer 588 is electrically connected to a common potential line provided on the same substrate as the thin film transistor 581. Using the common connection portion shown in the above-described embodiment, the second electrode layer 588 provided on the substrate 596 and the common potential line can be electrically connected through conductive particles disposed between a pair of substrates.

[0301] Also, instead of the twist ball, it is also possible to use an electrophoresis element. In that case, ​​​​​​​​​​​​A transparent liquid is enclosed in a 10 cm diameter tube containing positively charged white particles and negatively charged black particles. Microcapsules of about 200 μm in size are used. Between the first electrode layer and the second electrode layer The microcapsules provided on the substrate are subjected to an electric field by the first electrode layer and the second electrode layer. When the light is turned on, the white particles and black particles move in opposite directions, allowing the display to be white or black. A display element that applies this principle is an electrophoretic display element, and is generally called electronic paper. Since electrophoretic display elements have a higher reflectivity than liquid crystal display elements, the auxiliary light It does not require a battery, consumes little power, and the display can be seen even in dimly lit places. In addition, even if power is not supplied to the display unit, the image once displayed can be retained. Therefore, it is possible to transmit the signal from the radio wave source to the semiconductor device with a display function (simply a display device, or a display The displayed image is preserved even if the device (also called a semiconductor device having the device) is moved away. It will be possible to keep

[0302] In this manner, electronic paper with high reliability as a semiconductor device can be manufactured.

[0303] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0304] (Embodiment 8) In this embodiment mode, a light-emitting display device is shown as an example of a semiconductor device. Here, a light-emitting element that uses electroluminescence is used as the element. Light-emitting devices that utilize fluoroluminescence are characterized by the fact that the luminescent material is either an organic compound or an inorganic compound. Generally, the former are called organic EL elements and the latter are called inorganic EL elements. It's been discovered.

[0305] When a voltage is applied to the light-emitting element, electrons and holes are injected from a pair of electrodes into a layer containing a light-emitting organic compound, respectively, and an electric current flows. Then, when these carriers (electrons and holes) recombine, the light-emitting organic compound forms an excited state, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting element is called a current-excited type light-emitting element. and when they are injected into a layer containing a light-emitting organic compound, respectively, an electric current flows. Then, when these carriers (electrons and holes) recombine, the light-emitting organic compound forms an excited state, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting element is called a current-excited type light-emitting element. riers (electrons and holes) recombine, the light-emitting organic compound forms an excited state, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting element is called a current-excited type light-emitting element. and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting element is called a current-excited type light-emitting element. and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting element is called a current-excited type light-emitting element.

[0306] Inorganic EL elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements according to their element structures. Dispersed inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the light-emitting mechanism is donor-acceptor recombination type light emission that utilizes donor levels and acceptor levels. Thin-film inorganic EL elements have a structure in which a light-emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. and the light-emitting mechanism is donor-acceptor recombination type light emission that utilizes donor levels and acceptor levels. Thin-film inorganic EL elements have a structure in which a light-emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. and the light-emitting mechanism is donor-acceptor recombination type light emission that utilizes donor levels and acceptor levels. Thin-film inorganic EL elements have a structure in which a light-emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. and the light-emitting mechanism is localized light emission that utilizes inner-shell electron transitions of metal ions. Here, an organic EL element is used as the light-emitting element for explanation. Here, an organic EL element is used as the light-emitting element for explanation.

[0307] FIG. 27 is a diagram showing an example of a pixel configuration to which digital time-graded driving can be applied as an example of a semiconductor device. FIG. 27 is a diagram showing an example of a pixel configuration to which digital time-graded driving can be applied as an example of a semiconductor device.

[0308] The configuration and operation of a pixel to which digital time-graded driving can be applied will be described. Here, an example in which two n-channel type transistors using an oxide semiconductor layer (In-Ga-Zn-O-based non-single crystal film) in a channel formation region are used for one pixel will be shown. Here, an example in which two n-channel type transistors using an oxide semiconductor layer (In-Ga-Zn-O-based non-single crystal film) in a channel formation region are used for one pixel will be shown. Here, an example in which two n-channel type transistors using an oxide semiconductor layer (In-Ga-Zn-O-based non-single crystal film) in a channel formation region are used for one pixel will be shown.

[0309] The pixel 6400 shown in FIG. 27(A) includes a switching transistor 6401 and a driving transistor 6401. It has a transistor 6402, a light-emitting element 6404, and a capacitor element 6403. The switching transistor 6401 has its gate connected to the scanning line 6406, and its first electrode (one of the source electrode and the drain electrode) is connected to the signal line 6405, and its second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 6402. The driving transistor 6402 has its gate connected to the power supply line 6407 via the capacitor element 6403, its first electrode connected to the power supply line 6407, and its second electrode connected to the first electrode (pixel electrode) of the light-emitting element 6404. The second electrode of the light-emitting element 6404 corresponds to the common electrode 6408.

[0310] Note that a low power supply potential is set for the second electrode (common electrode 6408) of the light-emitting element 6404. Note that the low power supply potential is a potential that satisfies the low power supply potential < high power supply potential with respect to the high power supply potential set on the power supply line 6407, and for example, GND, 0V, etc. may be set as the low power supply potential. A potential difference between this high power supply potential and the low power supply potential is applied to the light-emitting element 6404 to cause a current to flow through the light-emitting element 6404 and make the light-emitting element 6404 emit light. Therefore, the potential difference between the high power supply potential and the low power supply potential is set so as to be equal to or greater than the forward threshold voltage of the light-emitting element 6404. Each potential is set accordingly.

[0311] However, it is not limited to this, and a high power supply potential may be set for the second electrode and a low power supply potential may be set for the power supply line 6407.

[0312] Note that the capacitor element 6403 can also be omitted by substituting for the gate capacitance of the driving transistor 6402. Regarding the gate capacitance of the driving transistor 6402, a capacitance may be formed between the channel region and the gate electrode. ​

[0313] Here, in the case of the voltage input voltage driving method, a video signal is input to the gate of the driving transistor 6402 such that the driving transistor 6402 has two states of being fully turned on or off. That is, the driving transistor 6402 operates in the linear region. Since the driving transistor 6402 operates in the linear region, a voltage higher than the voltage of the power supply line 6407 is applied to the gate of the driving transistor 6402. Note that a voltage equal to or higher than (the power supply line voltage + the Vth of the driving transistor 6402) is applied to the signal line 6405. Note that a voltage equal to or higher than (the power supply line voltage + the Vth of the driving transistor 6402) is applied to the signal line 6405. Also, when performing analog gradation driving instead of digital time gradation driving, the same pixel configuration as in FIG. 27 can be used by changing the signal input. When performing analog gradation driving, a voltage equal to or higher than (the forward voltage of the light emitting element 6404 + the Vth of the driving transistor 6402) is applied to the gate of the driving transistor 6402. The forward voltage of the light emitting element 6404 refers to the voltage when a desired luminance is set, and includes at least the forward threshold voltage. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. (The power supply line voltage + the Vth of the driving transistor 6402) or higher voltage is applied.

[0314] Also, when performing analog gradation driving instead of digital time gradation driving, the same pixel configuration as in FIG. 27 can be used by changing the signal input. When performing analog gradation driving, a voltage equal to or higher than (the forward voltage of the light emitting element 6404 + the Vth of the driving transistor 6402) is applied to the gate of the driving transistor 6402. The forward voltage of the light emitting element 6404 refers to the voltage when a desired luminance is set, and includes at least the forward threshold voltage. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed.

[0315] When performing analog gradation driving, a voltage equal to or higher than (the forward voltage of the light emitting element 6404 + the Vth of the driving transistor 6402) is applied to the gate of the driving transistor 6402. The forward voltage of the light emitting element 6404 refers to the voltage when a desired luminance is set, and includes at least the forward threshold voltage. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. When performing analog gradation driving, a voltage equal to or higher than (the forward voltage of the light emitting element 6404 + the Vth of the driving transistor 6402) is applied to the gate of the driving transistor 6402. The forward voltage of the light emitting element 6404 refers to the voltage when a desired luminance is set, and includes at least the forward threshold voltage. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. The forward voltage of the light emitting element 6404 refers to the voltage when a desired luminance is set, and includes at least the forward threshold voltage. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. By inputting a video signal such that the driving transistor 6402 operates in the saturation region, current can flow through the light emitting element 6404. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. To operate the driving transistor 6402 in the saturation region, the potential of the power supply line 6407 is made higher than the gate potential of the driving transistor 6402. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed. By making the video signal analog, current corresponding to the video signal can flow through the light emitting element 6404, and analog gradation driving can be performed.

[0316] Note that the pixel configuration shown in this embodiment is not limited to this. For the pixel shown in FIG. 27(A), A new switch, resistor element, capacitor element, transistor, logic circuit, etc. may be added. For example, the configuration shown in FIG. 27(B) may be used. The pixel 6420 shown in FIG. 27(B) includes a switching transistor 6401, a driving transistor 6402, a light-emitting element 6404 and a capacitor element 6423. The switching transistor 6401 has a gate connected to the scanning line 6406, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 64 05, and a second electrode (the other of the source electrode and the drain electrode) connected to the gate of the driving transistor 6402. The driving transistor 6402 has a gate connected to the first electrode (pixel electrode) of the light-emitting element 6404 via the capacitor element 6423, a first electrode connected to the wiring 6426 for applying a pulse voltage, and a second electrode connected to the first electrode of the light-emitting element 6404 is connected. The second electrode of the light-emitting element 6404 corresponds to the common electrode 6408. Of course , for this configuration, a new switch, resistor element, capacitor element, transistor, or logic circuit etc. may be added.

[0317] Next, the configuration of the light-emitting element will be described with reference to FIG. 28. Here, the case where the driving TFT is of the n type will be taken as an example to describe the cross-sectional structure of the pixel. The TFTs 7001, 7011, and 7021, which are driving TFTs used in the semiconductor devices of FIGS. 28(A), (B), and (C), can be fabricated in the same manner as the thin-film transistors shown in the above-described embodiments, and are highly reliable thin-film transistors including an In-Ga-Zn-O-based non-single-crystalline crystalline film as the semiconductor layer.

[0318] For the light-emitting element, at least one of the anode and the cathode may be transparent in order to extract light. Then, a thin-film transistor and a light-emitting element are formed on a substrate, and light emission is extracted from the surface opposite to the substrate side There are top-emitting structures that extract light from the surface opposite to the substrate, bottom-emitting structures that extract light from the substrate side surface, and double-sided emission structures that extract light from both the substrate side and the surface opposite to the substrate side. The pixel configuration can be applied to light-emitting elements of any emission structure .

[0319] The light-emitting element with a top-emitting structure will be described with reference to FIG. 28(A)

[0320] FIG. 28(A) shows a cross-sectional view of a pixel when the TFT 7001, which is a driving TFT, is of the n-type and the light emitted from the light-emitting element 7002 escapes to the anode 7005 side . In FIG. 28(A), the cathode 7003 of the light-emitting element 7002 is electrically connected to the TFT 7001, which is a driving TFT, and a light-emitting layer 7004 and an anode 7005 are sequentially laminated on the cathode 7003 . The cathode 7003 can be made of various materials as long as it has a low work function and reflects light . For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable . The light-emitting layer 7004 may be composed of a single layer or a plurality of laminated layers . When it is composed of a plurality of layers, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer are sequentially laminated on the cathode 7003 . Note that it is not necessary to provide all of these layers . The anode 7005 is formed using a conductive material having light-transmitting properties, and examples include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide , indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, and indium oxide containing cerium . formed, and for example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide , indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium oxide containing cerium , indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium oxide containing cerium A light-transmissive conductive film such as indium tin oxide to which iodine is added may be used.

[0321] The region where the light-emitting layer 7004 is sandwiched between the cathode 7003 and the anode 7005 corresponds to the light-emitting element 7002. In the case of the pixel shown in Fig. 28(A), the light emitted from the light-emitting element 7002 is emitted toward the anode 7005 as indicated by the arrow.

[0322] Further, in the above configuration, a microcavity structure may be formed by adjusting the film thickness of the light-emitting layer 7004. By adopting a microcavity structure, the color purity can be improved. Also, when a plurality of light-emitting layers 7004 emit different colors (for example, RGB), it is preferable to adjust the film thickness of the light-emitting layer 7004 for each color to form a microcavity structure.

[0323] Further, in the above configuration, an insulating film such as silicon oxide or silicon nitride may be provided on the anode 7005. This can suppress the deterioration of the light-emitting layer.

[0324] Next, the light-emitting element with a bottom emission structure will be described with reference to Fig. 28(B). Fig. 28(B) shows a cross-sectional view of a pixel when the driving TFT 7011 is n-type and the light emitted from the light-emitting element 7012 is emitted toward the cathode 7013. In Fig. 28(B), the cathode 7013 of the light-emitting element 7012 is formed on a light-transmissive conductive film 7017 that is electrically connected to the driving TFT 7011. The light-emitting layer 7014 and the anode 7015 are sequentially laminated on the cathode 7013. When the anode 7015 is light-transmissive, a shielding film 7016 for reflecting or shielding light may be formed so as to cover the anode. The cathode 7013 is the same as in the case of Fig. 28(A). ​​​​Various materials can be used as long as they are conductive materials with a small work function. However, the film thickness should be such that light can pass through it (preferably about 5 nm to 30 nm). For example, an aluminum film with a thickness of 20 nm can be used as the cathode 7013. And the light-emitting layer 7 014 can be composed of a single layer or multiple layers stacked on top of each other, similar to Figure 28(A). The anode 7015 does not necessarily need to transmit light, but it can be formed using a conductive material with light-transmitting properties, similar to Figure 28(A). And the shielding film 7016 can be made of, for example, a metal that reflects light, etc., but it is not limited to a metal film. For example, a resin with a black pigment added can also be used. 28(A). And The region where the light-emitting layer 7014 is sandwiched between the cathode 7013 and the anode 7015 corresponds to the light-emitting element 7012. In the case of the pixel shown in Figure 28(B), the light emitted from the light-emitting element 7012 is emitted toward the cathode 7013 side as indicated by the arrow.

[0325]

[0326] Next, the light-emitting element with a double-sided emission structure will be described with reference to Figure 28(C). In Figure 28(C), on the light-transmitting conductive film 7027 electrically connected to the driving TFT 7021, the cathode 7023 of the light-emitting element 7022 is formed, and the light-emitting layer 7024 and the anode 7025 are sequentially stacked on the cathode 7023. The cathode 7023 can be made of various materials as long as they are conductive materials with a small work function, similar to the case of Figure 28(A). However, the film thickness should be such that light can pass through it. For example, Al with a thickness of 20 nm can be used as the cathode 7023. And the light-emitting layer 7024 can be composed of a single layer, similar to Figure 28(A). It may be either that a plurality of layers are laminated or not. Anode 70 25 can be formed using a conductive material having light-transmitting properties that transmit light, similar to FIG. 28(A). It can be done.

[0327] The portion where the cathode 7023, the light-emitting layer 7024, and the anode 7025 overlap corresponds to the light-emitting element 70 22. In the case of the pixel shown in FIG. 28(C), the light emitted from the light-emitting element 7022 is emitted to both the anode 7025 side and the cathode 7023 side as indicated by the arrows.

[0328] Here, although the organic EL element has been described as the light-emitting element, it is also possible to provide an inorganic EL element as the light-emitting element.

[0329] In this embodiment, an example in which a thin-film transistor (driving TFT) for controlling the driving of the light-emitting element and the light-emitting element are electrically connected has been shown. However, a configuration in which a current control TFT is connected between the driving TFT and the light-emitting element may also be used.

[0330] Note that the semiconductor device shown in this embodiment is not limited to the configuration shown in FIG. 28, and various modifications are possible.

[0331] Next, the appearance and cross-section of a light-emitting display panel (also referred to as a light-emitting panel) corresponding to one form of the semiconductor device will be described with reference to FIG. 29. FIG. 29(A) shows a highly reliable thin-film transistor formed on the first substrate 4051 with an In-Ga-Zn-O-based non-single-crystalline film as a semiconductor layer 4509, 4510 and a light-emitting element 4511 sealed with a sealing material 4505 between the second substrate 4506. FIG. 29(B) corresponds to a cross-sectional view taken along H-I of FIG. 29(A). 4509, 4510 and a light-emitting element 4511 sealed with a sealing material 4505 between the second substrate 4506. FIG. 29(B) corresponds to a cross-sectional view taken along H-I of FIG. 29(A). 4509, 4510 and a light-emitting element 4511 sealed with a sealing material 4505 between the second substrate 4506. FIG. 29(B) corresponds to a cross-sectional view taken along H-I of FIG. 29(A). It is a top view of the panel, and FIG. 29(B) corresponds to a cross-sectional view taken along H-I of FIG. 29(A). It corresponds to the cross-sectional view taken along H-I of FIG. 29(A).

[0332] A pixel portion 4502, signal line drive circuits 4503a and 4503b, and scan line drive circuits 4504a and 4504b provided on a first substrate 4501 are surrounded by a sealing material 4505. Also, a second substrate 4506 is provided over the pixel portion 4502, the signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b. Thus, the pixel portion 4502, the signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b are sealed together with a filling material 4507 by the first substrate 4501, the sealing material 4505, and the second substrate 4506. In this way, a high airtightness and low outgassing protection film (such as a bonding film, an ultraviolet curable resin film, etc.) or a cover material is preferably used for packaging (enclosing) so as not to be exposed to the outside air. Also, the pixel portion 4502, the signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b provided on the first substrate 4501 have a plurality of thin film transistors. In FIG. 29(B), the thin film transistor 4510 included in the pixel portion 4502 and the thin film transistor 4509 included in the signal line drive circuit 4503a are illustrated as examples. The thin film transistors 4509 and 4510 can have the configurations shown in the above embodiment. Here, the thin film transistors 4509 and 4510 can be high-reliability thin film transistors including an In-Ga-Zn-O-based amorphous film as a semiconductor layer. In the present embodiment, the thin film transistors 4509 and 4510 are n-channel type thin film transistors.

[0333] Also, the pixel portion 4502, the signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b provided on the first substrate 4501 have a plurality of thin film transistors. In FIG. 29(B), the thin film transistor 4510 included in the pixel portion 4502 and the thin film transistor 4509 included in the signal line drive circuit 4503a are illustrated as examples. The thin film transistors 4509 and 4510 can have the configurations shown in the above embodiment. Here, the thin film transistors 4509 and 4510 can be high-reliability thin film transistors including an In-Ga-Zn-O-based amorphous film as a semiconductor layer.

[0334] The thin film transistors 4509 and 4510 can have the configurations shown in the above embodiment. Here, the thin film transistors 4509 and 4510 can be high-reliability thin film transistors including an In-Ga-Zn-O-based amorphous film as a semiconductor layer. In the present embodiment, the thin film transistors 4509 and 4510 are n-channel type thin film transistors. In the present embodiment, the thin film transistors 4509 and 4510 are n-channel type thin film transistors. Here, the thin film transistors 4509 and 4510 are n-channel type thin film transistors.

[0335] Also, 4511 corresponds to a light-emitting element, and the first electrode is a pixel electrode of the light-emitting element 4511 Layer 4517 is electrically connected to the source electrode layer or the drain electrode layer of the thin-film transistor 4510 Note that the structure of the light-emitting element 4511 is a laminated structure of the first electrode layer 4517, the electroluminescent layer 4512, and the second electrode layer 4513, but it is not limited to the structure shown in this embodiment The structure of the light-emitting element 4511 can be appropriately changed according to the direction of light extracted from the light-emitting element 4511, etc

[0336] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane In particular, it is preferable to use a photosensitive material to form an opening on the first electrode layer 4517 and form it so that the side wall of the opening becomes an inclined surface formed with a continuous curvature

[0337] The electroluminescent layer 4512 may be composed of a single layer or may be configured such that a plurality of layers are laminated

[0338] A protective film may be formed on the second electrode layer 4513 and the partition wall 4520 so that oxygen, hydrogen, moisture, carbon dioxide, etc. do not enter the light-emitting element 4511 As the protective film, a silicon nitride film, a silicon oxynitride film, a DLC film, etc. can be formed

[0339] Also, various signals and potentials applied to the signal line drive circuits 4503a, 4503b, the scan line drive circuits 4504a, 4504b , or the pixel section 4502 are supplied from the FPCs 4518a, 4518 b

[0340] In this embodiment, the connection terminal electrode 4515 is the first electrode layer 4 of the light-emitting element 4511​​​​ It is formed from the same conductive film as 517, and the terminal electrode 4516 is formed from the same conductive film as the source electrode layer and the drain electrode layer of the thin film transistors 4509 and 4 510.

[0341] The connection terminal electrode 4515 is electrically connected to the terminal of the FPC 4518a via an anisotropic conductive film 4519.

[0342] The substrate located in the light extraction direction from the light emitting element 4511 must be translucent. In that case, a translucent material such as a glass plate, a plastic plate, a polyester film, or an acrylic film is used.

[0343] In addition to inert gases such as nitrogen and argon, an ultraviolet curable resin or a thermosetting resin can be used as the filler 4507, and PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinyl acetate) can be used. In this embodiment, nitrogen is used as the filler.

[0344] If necessary, an optical film such as a polarizing plate, a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), or a color filter may be appropriately provided on the light emitting surface of the light emitting element. In addition, an antireflection film may be provided on the polarizing plate or the circular polarizing plate. For example, an antiglare treatment that diffuses reflected light due to surface irregularities and can reduce reflections can be performed.

[0345] The signal line drive circuits 4503a, 4503b, and the scan line drive circuits 4504a, 4504b are formed by a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate. It may be implemented on a circuit board. Also, only the signal line driving circuit, or a part thereof, or only the scanning line driving circuit, or a part thereof may be separately formed and implemented, and the present embodiment is not limited to the configuration of FIG. 29. or only a part of it may be separately formed and implemented, and the present embodiment is not limited to the configuration of FIG. 29. It is not limited.

[0346] Through the above steps, a highly reliable light-emitting display device (display panel) can be manufactured as a semiconductor device. It can be done.

[0347] The present embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0348] (Embodiment 9) The semiconductor device can be applied as an electronic paper. The electronic paper can be used in electronic devices in any field as long as it can display information. For example, the electronic paper can be used for displays in various cards such as electronic books (e-books), posters, in-vehicle advertisements in vehicles such as trains, and credit cards. An example of an electronic device is shown in FIGS. 30 and 31. It can be used for displays in various cards such as electronic books (e-books), posters, in-vehicle advertisements in vehicles such as trains, and credit cards. An example of an electronic device is shown in FIGS. 30 and 31. Using the electronic paper, it can be applied to displays in various cards such as electronic books (e-books), posters, in-vehicle advertisements in vehicles such as trains, and credit cards. It can be applied to displays in various cards such as electronic books (e-books), posters, in-vehicle advertisements in vehicles such as trains, and credit cards. shown in FIGS. 30 and 31.

[0349] FIG. 30(A) shows a poster 2631 made of electronic paper. When the advertising medium is a paper print, the advertisement is exchanged manually, but when using electronic paper, the advertisement can be changed in a short time. Also, a stable image can be obtained without the display being distorted. Note that the poster may be configured to be able to wirelessly transmit and receive information. When the advertising medium is a paper print, the advertisement is exchanged manually, but when using electronic paper, the advertisement can be changed in a short time. Also, a stable image can be obtained without the display being distorted. Note that the poster may be configured to be able to wirelessly transmit and receive information. it is possible to change the advertisement display in a short time. Also, a stable image can be obtained without the display being distorted. Note that the poster may be configured to be able to wirelessly transmit and receive information. A stable image can be obtained without the display being distorted. Note that the poster may be configured to be able to wirelessly transmit and receive information.

[0350] Also, FIG. 30(B) shows an in-vehicle advertisement 2632 in a vehicle such as a train. When the advertising medium is a paper print, the advertisement is exchanged manually, but when using electronic paper, When the advertising medium is a paper print, the advertisement is exchanged manually, but when using electronic paper, Then, without requiring a large amount of manpower, the advertisement display can be changed in a short time. Also, a stable image can be obtained without the display being disrupted. Note that the poster may be configured to be able to wirelessly transmit and receive information. In addition, the poster may be configured to be able to wirelessly transmit and receive information.

[0351] Also, FIG. 31 shows an example of an electronic book 2700. For example, the electronic book 2700 is composed of two housings, a housing 2701 and a housing 2703. The housing 2701 and the housing 2703 are integrated by a shaft portion 2711, and can be opened and closed around the shaft portion 2711. With such a configuration, it is possible to perform operations similar to those of a paper book.

[0352] A display unit 2705 is incorporated in the housing 2701, and a display unit 2707 is incorporated in the housing 2703. The display unit 2705 and the display unit 2707 may be configured to display a continuous screen, or may be configured to display different screens. When configured to display different screens, for example, text can be displayed on the right display unit (display unit 2705 in FIG. 31), and an image can be displayed on the left display unit (display unit 2707 in FIG. 31).

[0353] Also, FIG. 31 shows an example in which the housing 2701 is provided with an operation unit or the like. For example, in the housing 2 701, a power supply 2721, operation keys 2723, a speaker 2725, etc. are provided. The page can be advanced by the operation keys 2723. Note that the housing may be configured to be provided with a key board, a pointing device, etc. on the same surface as the display unit of the housing. Also, on the back surface or side surface of the housing, external connection terminals (such as earphone terminals, USB terminals, or terminals connectable to various cables such as an AC adapter and a USB cable), a recording medium insertion portion, etc. may be provided. It may be configured as such. Furthermore, the electronic book 2700 may be configured to have a function as an electronic dictionary. It may be.

[0354] Also, the electronic book 2700 may be configured to be able to wirelessly transmit and receive information. By wireless means, it is possible to purchase and download desired book data and the like from an electronic book server. It is also possible.

[0355] (Embodiment 10) In this embodiment, the configuration of pixels applicable to a liquid crystal display device and the operation of the pixels will be described. Note that, as the operation mode of the liquid crystal element in this embodiment, TN (Twist ed Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Mul ti-domain Vertical Alignment) mode, PVA (Pat terned Vertical Alignment), ASM (Axially S ymmetric aligned Micro-cell) mode, OCB (Opti cal Compensated Birefringence) mode, FLC (Fe rroelectric Liquid Crystal) mode, AFLC (Anti Ferroelectric Liquid Crystal), etc. can be used. It is possible.

[0356] FIG. 41(A) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. Pixel 508 0 has a transistor 5081, a liquid crystal element 5082, and a capacitor element 5083. The gate of transistor 5081 is electrically connected to wiring 5085. Transistor 508 The first terminal of 1 is electrically connected to wiring 5084. The second terminal of transistor 5081 is electrically connected to the first terminal of liquid crystal element 5082. The second terminal of liquid crystal element 5082 is connected to wiring 5087 electrically. The first terminal of capacitor element 5083 is electrically connected to the first terminal of liquid crystal element 5082. The second terminal of capacitor element 5083 is electrically connected to wiring 5086 electrically. Note that the first terminal of the transistor is either the source or the drain, and the second terminal of the transistor is the other of the source or the drain. That is, when the first terminal of the transistor is the source, the second terminal of the transistor becomes the drain . Similarly, when the first terminal of the transistor is the drain, the second terminal of the transistor is the source.

[0357] Wiring 5084 can function as a signal line. The signal line is a wiring for transmitting the signal voltage input from outside the pixel to pixel 5080. Wiring 5085 can function as a scanning line . The scanning line is a wiring for controlling the on / off of transistor 5081. Wiring 5086 can function as a capacitor line . The capacitor line is a wiring for applying a predetermined voltage to the second terminal of capacitor element 5083. Transistor 5081 can function as a switch. Capacitor element 5083 can function as a holding capacitor . The holding capacitor is a capacitor element for allowing the signal voltage to continue to be applied to liquid crystal element 5 082 even when the switch is off. Wiring 5087 can function as a counter electrode . The counter electrode is a wiring for applying a predetermined voltage to the second terminal of liquid crystal element 5082 . Note that the functions that each wiring can have are not limited to this . ​ and can have various functions. For example, by changing the voltage applied to the capacitance line , the voltage applied to the liquid crystal element can also be adjusted. Note that since the transistor 5081 only needs to function as a switch, the polarity of the transistor 5081 can be P-channel type or N-channel type.

[0358] FIG. 41(B) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. The pixel configuration example shown in FIG. 41(B ) is the same configuration as the pixel configuration example shown in FIG. 41(A), except that the wiring 5087 is omitted and the second terminal of the liquid crystal element 5082 and the second terminal of the capacitance element 5083 are electrically connected . The pixel configuration example shown in FIG. 41(B) is applicable particularly when the liquid crystal element is in the horizontal electric field mode (including the IPS mode and the FFS mode). This is because when the liquid crystal element is in the horizontal electric field mode, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitance element 5083 can be formed on the same substrate, so it is easy to electrically connect the second terminal of the liquid crystal element 5082 and the second terminal of the capacitance element 5 083. By adopting the pixel configuration as shown in FIG. 41(B), the wiring 5087 can be omitted, so the manufacturing process can be simplified and the manufacturing cost can be reduced.

[0359] The pixel configurations shown in FIG. 41(A) or FIG. 41(B) can be arranged in a matrix form in a plurality. By doing so, the display portion of the liquid crystal display device is formed, and various images can be displayed . FIG. 41(C) shows a state where a plurality of the pixel configurations shown in FIG. 41(A) are arranged in a matrix form The circuit configuration shown in FIG. 41C is a diagram showing a circuit configuration in the case where the display unit has The figure shows four pixels extracted from the multiple pixels. The pixel located at the position (j is a natural number) is represented as pixel 5080_i,j. The wiring 5084_i, the wiring 5085_j, and the wiring 5086_j are electrically connected to Similarly, for the pixel 5080_i+1,j, a wiring 5084_i+1, a wiring 5085_j is electrically connected to the wiring 5086_j. For +1, wire 5084_i, wire 5085_j+1, wire 5086_j+1 and Similarly, for the pixel 5080_i+1, j+1, i+1, a wiring 5085_j+1, and a wiring 5086_j+1. A wiring can be shared by multiple pixels in the same column or row. In the pixel configuration shown in FIG. 41(C), the wiring 5087 is a counter electrode. Since the elements are common, the notation for wiring 5087 using natural numbers i or j is It is also possible to use the pixel configuration shown in FIG. Therefore, even if the wiring 5087 is shown in the configuration, the wiring 5087 is not essential, and other wiring It may be omitted by being shared with a line, etc.

[0360] The pixel configuration shown in FIG. 41(C) can be driven in various ways. The liquid crystal display is driven by a method called flow driving, which prevents deterioration of the liquid crystal element (burn-in). FIG. 41(D) shows a case where dot inversion driving, which is one of the AC driving methods, is used. When the case occurs, the voltage timings applied to each wiring in the pixel configuration shown in Fig. 41(C). It is a diagram showing a voltage chart. By performing dot inversion driving, it is possible to suppress flicker (flashing) visually recognized when AC driving is performed.

[0361] In the pixel configuration shown in Fig. 41(C), the switch in the pixel electrically connected to wiring 5085_j is in the selected state (on state) during the j-th gate selection period in one frame period, and is in the non-selected state (off state) in other periods. And after the j-th gate selection period, the (j + 1)-th gate selection period is provided. By performing sequential scanning in this way, all pixels become the selected state in order within one frame period. In the timing chart shown in Fig. 41(D), when the voltage becomes a high state (high level), the switch in the pixel becomes the selected state, and when the voltage becomes a low state (low level), it becomes the non-selected state. Note that this is the case when the transistor in each pixel is of the N-channel type. When a P-channel type transistor is used, the relationship between the voltage and the selected state is opposite to that in the case of the N-channel type.

[0362] In the timing chart shown in Fig. 41(D), during the j-th gate selection period in the k-th frame (k is a natural number), a positive signal voltage is applied to wiring 5084_i used as a signal line, and a negative signal voltage is applied to wiring 5084_i + 1. And during the (j + 1)-th gate selection period in the k-th frame, a negative signal voltage is applied to wiring 5084_i, and a positive signal voltage is applied to wiring 5084_i + 1. After that, each signal line is also selected by the gate. ​​​​​​​​​​​​​​In each selection period, a signal with the polarity inverted is added alternately. As a result, in the kth frame, A positive signal voltage is applied to the pixel 5080_i,j, and a negative signal voltage is applied to the pixel 5080_i+1,j. A negative signal voltage is applied to pixel 5080_i, j+1, and a positive signal voltage is applied to pixel 5080_i+1, j+1. In the k+1-th frame, the signal voltages are added as follows: In each pixel, a signal voltage of the opposite polarity to the signal voltage written in the kth frame is written. As a result, in the k+1th frame, the pixel 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to pixel 5080_i+1,j+1, and a negative signal voltage is applied to pixel 5080_i+1,j+1. In this way, adjacent pixels in the same frame have different polarities. A signal voltage having a specific polarity is applied to each pixel, and a signal voltage The dot inversion driving method inverts the polarity of the liquid crystal. This is visible when the entire or part of the displayed image is uniform while suppressing deterioration of the element. Flicker can be reduced. The voltage applied to all the wirings 5086 including the wiring 5086 can be a constant voltage. The timing chart for the signal voltage of line 5084 only indicates the polarity. In this case, various signal voltage values can be used for the displayed polarity. Although the polarity is inverted for each pixel, the present invention is not limited to this. For example, the polarity of the signal voltage written every two gate selection periods can be reversed. By reversing the polarity, it is possible to reduce the power consumption required to write the signal voltage. This is also possible. Additionally, it is possible to invert the polarity for each column (source line inversion), or invert the polarity for each row (gate line inversion).

[0363] Note that a constant voltage may be applied to the second terminal of the capacitive element 5083 in the pixel 5080 within one frame period. Here, the voltage applied to the wiring 5085 used as the scanning line is at a low level for most of one frame period, and since a substantially constant voltage is applied, the connection destination of the second terminal of the capacitive element 5083 in the pixel 5080 may be the wiring 5 085. FIG. 41(E) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. The pixel configuration shown in FIG. 41(E), when compared with the pixel configuration shown in FIG. 41(C), is characterized in that the wiring 5086 is omitted, and the second terminal of the capacitive element 5083 within the pixel 5080 is electrically connected to the wiring 5085 in the previous row. Specifically, within the range shown in FIG. 41(E), the second terminals of the capacitive elements 5083 in the pixels 5080_i,j+1 and the pixel 5080_i+1,j+1 are electrically connected to the wiring 5085_j. In this way, by electrically connecting the second terminal of the capacitive element 5083 within the pixel 5080 to the wiring 5085 in the previous row, the wiring 5086 can be omitted, thereby improving the aperture ratio of the pixel. Note that the connection destination of the second terminal of the capacitive element 5083 may be the wiring 5085 in another row instead of the wiring 5085 in the previous row. Note that the driving method of the pixel configuration shown in FIG. 41(E) may use the same method as the driving method of the pixel configuration shown in FIG. 41(C). method of the pixel configuration shown in FIG. 41(C). method of the pixel configuration shown in FIG. 41(C). The connection destination of the second terminal of the capacitive element 5083 may be the wiring 5085 in another row instead of the wiring 5085 in the previous row. Note that the driving method of the pixel configuration shown in FIG. 41(E) may use the same method as the driving method of the pixel configuration shown in FIG. 41(C). method of the pixel configuration shown in FIG. 41(C).

[0364] Note that, by using the capacitive element 5083 and the wiring electrically connected to the second terminal of the capacitive element 5083, the voltage applied to the wiring 5084 used as a signal line can be reduced. The pixel configuration and the driving method in this case will be described with reference to FIGS. 41(F) and 41(G). The pixel configuration shown in FIG. 41(F) is characterized in that, compared with the pixel configuration shown in FIG. 41(A), the wiring 5 086 is provided with two lines per pixel column, and the electrical connection between the second terminal of the capacitive element 5083 in the pixel 5080 is made alternately in adjacent pixels. The two lines of the wiring 5086 are respectively referred to as the wiring 5086-1 and the wiring 5086-2. Specifically, within the range shown in FIG. 41(F), the second terminal of the capacitive element 5083 in the pixel 5080_i ,j is electrically connected to the wiring 5086-1_j, the second terminal of the capacitive element 5083 in the pixel 5080_i+1,j is electrically connected to the wiring 5086-2 _j, the second terminal of the capacitive element 5083 in the pixel 5080_i,j+1 is electrically connected to the wiring 5086-2_j+1, and the second terminal of the capacitive element 5083 in the pixel 5080_i+1,j+1 is electrically connected to the wiring 5086-1_j+1. And, for example, as shown in FIG. 41(G), when a positive-polarity signal voltage is written into the pixel 5080_i, j in the k-th frame, the wiring 5086-1_j is set to a low level during the j-th gate selection period and changed to a high level after the end of the j-th gate selection period. And it maintains the high level throughout one frame period and is changed to a low level after a negative-polarity signal voltage is written in the j-th gate selection period in the (k + 1)-th frame.

[0365] ​​​​​​​​​​​​。Thus, after a positive-polarity signal voltage is written into the pixel, by changing the voltage of the wiring electrically connected to the second terminal of the capacitor element 5083 in the positive direction, the voltage applied to the liquid crystal element can be changed by a predetermined amount in the positive direction. That is, since the signal voltage written into the pixel can be reduced by that amount, the power consumption for signal writing can be reduced. When a negative-polarity signal voltage is written during the j-th gate selection period, after the negative-polarity signal voltage is written into the pixel, by changing the voltage of the wiring electrically connected to the second terminal of the capacitor element 5083 in the negative direction, the voltage applied to the liquid crystal element can be changed by a predetermined amount in the negative direction. Thus, similar to the case of positive polarity, the signal voltage written into the pixel can be reduced. That is, the wiring electrically connected to the second terminal of the capacitor element 5083 is preferably a different wiring for pixels to which a positive-polarity signal voltage is applied and pixels to which a negative-polarity signal voltage is applied in the same row of the same frame. FIG. 41(F) shows an example in which wiring 5086-1 is electrically connected to pixels to which a positive-polarity signal voltage is written in the k-th frame, and wiring 5086-2 is electrically connected to pixels to which a negative-polarity signal voltage is written in the k-th frame. However, this is just an example. For example, in the case of a driving method in which pixels to which a positive-polarity signal voltage is written and pixels to which a negative-polarity signal voltage is written appear every two pixels, the electrical connections of wiring 5086-1 and wiring 5086-2 are preferably alternated every two pixels accordingly. Furthermore, the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion) is also conceivable. In that case, one wiring 5086 per row is sufficient. In FIG. 41(F), wiring 5086-1 is electrically connected to pixels to which a positive-polarity signal voltage is written in the k-th frame, and wiring 5086-2 is electrically connected to pixels to which a negative-polarity signal voltage is written in the k-th frame. However, this is just an example. For example, in the case of a driving method in which pixels to which a positive-polarity signal voltage is written and pixels to which a negative-polarity signal voltage is written appear every two pixels, the electrical connections of wiring 5086-1 and wiring 5086-2 are preferably alternated every two pixels accordingly. Furthermore, the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion) is also conceivable. In that case, one wiring 5086 per row is sufficient. That is, the wiring electrically connected to the second terminal of the capacitor element 5083 is preferably a different wiring for pixels to which a positive-polarity signal voltage is applied and pixels to which a negative-polarity signal voltage is applied in the same row of the same frame. FIG. 41(F) shows an example in which wiring 5086-1 is electrically connected to pixels to which a positive-polarity signal voltage is written in the k-th frame, and wiring 5086-2 is electrically connected to pixels to which a negative-polarity signal voltage is written in the k-th frame. However, this is just an example. For example, in the case of a driving method in which pixels to which a positive-polarity signal voltage is written and pixels to which a negative-polarity signal voltage is written appear every two pixels, the electrical connections of wiring 5086-1 and wiring 5086-2 are preferably alternated every two pixels accordingly. Furthermore, the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion) is also conceivable. In that case, one wiring 5086 per row is sufficient. That is, the wiring electrically connected to the second terminal of the capacitor element 5083 is preferably a different wiring for pixels to which a positive-polarity signal voltage is applied and pixels to which a negative-polarity signal voltage is applied in the same row of the same frame. For example, in the case of a driving method in which pixels to which a positive-polarity signal voltage is written and pixels to which a negative-polarity signal voltage is written appear every two pixels, the electrical connections of wiring 5086-1 and wiring 5086-2 are preferably alternated every two pixels accordingly. Furthermore, the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion) is also conceivable. In that case, one wiring 5086 per row is sufficient. That is, the wiring electrically connected to the second terminal of the capacitor element 5083 is preferably a different wiring for pixels to which a positive-polarity signal voltage is applied and pixels to which a negative-polarity signal voltage is applied in the same row of the same frame. Furthermore, the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion) is also conceivable. In that case, one wiring 5086 per row is sufficient. That is, even in the pixel configuration shown in Fig. 41(C), a driving method for reducing the signal voltage written to the pixel as described with reference to Figs. 41(F) and 41(G) can be used. Next, a pixel configuration and its driving method that are particularly preferable when the liquid crystal element is in a vertical alignment (VA) mode typified by an MVA mode or a PVA mode will be described. The VA mode has excellent characteristics such as no need for a rubbing process during manufacturing, little light leakage during black display, and a low driving voltage. However, it also has a problem that the image quality deteriorates (the viewing angle is narrow) when the screen is viewed obliquely.

[0366] To widen the viewing angle of the VA mode, as shown in Figs. 42(A) and 42(B), it is effective to adopt a pixel configuration in which a pixel has a plurality of sub-pixels. The pixel configurations shown in Figs. 42(A) and 42(B) represent an example in the case where pixel 5080 includes two sub-pixels (sub-pixel 5080-1 and sub-pixel 5080-2). Note that the number of sub-pixels in one pixel is not limited to two, and various numbers of sub-pixels can be used. The larger the number of sub-pixels, the wider the viewing angle can be. The plurality of sub-pixels can have the same circuit configuration. Here, it will be described assuming that all sub-pixels have the same circuit configuration as that shown in Fig. 41(A). Note that the first sub-pixel 5080-1 includes a transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). Similarly, the second sub-pixel 5080-2 includes a transistor 5081-2, a liquid crystal element 5082-2, and a capacitor element 5083-2, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). The pixel configuration shown in Figs. 42(A) and 42(B) is an example when pixel 5080 includes two sub-pixels (sub-pixel 5080-1 and sub-pixel 5080-2). Note that the number of sub-pixels in one pixel is not limited to two, and various numbers of sub-pixels can be used. The larger the number of sub-pixels, the wider the viewing angle can be. The plurality of sub-pixels can have the same circuit configuration. Here, it will be described assuming that all sub-pixels have the same circuit configuration as that shown in Fig. 41(A). Note that the first sub-pixel 5080-1 includes a transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). Similarly, the second sub-pixel 5080-2 includes a transistor 5081-2, a liquid crystal element 5082-2, and a capacitor element 5083-2, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). That is, the first sub-pixel 5080-1 has a transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). Similarly, the second sub-pixel 5080-2 has a transistor 5081-2, a liquid crystal element 5082-2, and a capacitor element 5083-2, and the connection relationships of these components shall follow the circuit configuration shown in Fig. 41(A). The connection relationships of each component shall follow the circuit configuration shown in Fig. 41(A). shall conform to

[0367] The pixel configuration shown in Fig. 42(A) has two wirings 5085 (wiring 5085-1, wiring 5085-2) used as scanning lines for two sub-pixels constituting one pixel, one wiring 5084 used as a signal line, and one wiring 5086 used as a capacitance line. By sharing the signal line and the capacitance line among two sub-pixels in this way, the aperture ratio can be improved, and furthermore, the signal line driving circuit can be made simple, resulting in reduced manufacturing costs and a reduced number of connection points between the liquid crystal panel and the driving circuit IC, and thus the yield can be improved. The pixel configuration shown in Fig. 42(B) has one wiring 5085 used as a scanning line for two sub-pixels constituting one pixel, two wirings 5084 (wiring 5084-1, wiring 5084-2) used as signal lines, and one wiring 5086 used as a capacitance line. By sharing the scanning line and the capacitance line among two sub-pixels in this way, the aperture ratio can be improved, and furthermore, the total number of scanning lines can be reduced, so that in a high-definition liquid crystal panel, the gate line selection period per element can be made sufficiently long, and an appropriate signal voltage can be written to each pixel. Figs. 42(C) and 42(D) are examples schematically showing the electrical connection states of the elements after replacing the liquid crystal elements with the shapes of the pixel electrodes in the pixel configuration shown in Fig. 42(B). In Figs. 42(C) and 42(D), electrode 5088-1 represents the first pixel electrode, and electrode 5088-2 represents the second pixel electrode. In Fig. 42(C), the first pixel

[0368] Figs. 42(C) and 42(D) are examples schematically showing the electrical connection states of the elements after replacing the liquid crystal elements with the shapes of the pixel electrodes in the pixel configuration shown in Fig. 42(B). In Figs. 42(C) and 42(D), electrode 5088-1 represents the first pixel electrode, and electrode 5088-2 represents the second pixel electrode. In Fig. 42(C), the first pixel The electrode 5088-1 corresponds to the first terminal of the liquid crystal element 5082-1 in Fig. 42(B). The second pixel electrode 5088-2 corresponds to the first terminal of the liquid crystal element 5082-2 in Fig. 42(B). That is, the first pixel electrode 5088-1 is electrically connected to one of the source or drain of the transistor 5081-1, and the second pixel electrode 5088-2 is electrically connected to one of the source or drain of the transistor 5081-2. On the other hand, in Fig. 42(D) the connection relationship between the pixel electrode and the transistor is reversed. That is, the first pixel electrode 5 088-1 is electrically connected to one of the source or drain of the transistor 5081-2 and the second pixel electrode 5088-2 is electrically connected to one of the source or drain of the transistor 5081-1.

[0369] By arranging the pixel configurations as shown in Figs. 42(C) and 42(D) alternately in a matrix a special effect can be obtained. An example of such a pixel configuration and its driving method is shown in Figs. 48(A) and 48(B). The pixel configuration shown in Fig. 48(A) has the parts corresponding to the pixel 5080_i,j and the pixel 5080_i+1,j+1 configured as shown in Fig. 42(C), and the parts corresponding to the pixel 5080_i+1,j and the pixel 5080_i,j+1 configured as shown in Fig. 42(D). In this configuration, when driven as shown in the timing chart of Fig. 48(B), during the j-th gate selection period of the k-th frame, a positive-polarity signal voltage is written to the first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j, and a negative-polarity signal voltage is written to the second pixel electrode of the pixel 5080_i,j and the first pixel electrode of the pixel 50 80_i+1,j. Further, in the k-th frame during the j-th gate selection period, a positive-polarity signal voltage is written to the first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j, and a negative-polarity signal voltage is written to the second pixel electrode of the pixel 5080_i,j and the first pixel electrode of the pixel 5080_i+1,j. a positive-polarity signal voltage is written to the first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j, and a negative-polarity signal voltage is written to the second pixel electrode of the pixel 5080_i,j and the first pixel electrode of the pixel 5080_i+1,j. 80_i+1,j. Further, in the k-th frame In the (j + 1)-th gate selection period of the frame, a signal voltage with a positive polarity is written to the second pixel electrode of pixel 5080_i,j+1 and the first pixel electrode of pixel 5080_i+1,j+1, and a signal voltage with a negative polarity is written to the first pixel electrode of pixel 5080_i,j+1 and the second pixel electrode of pixel 5080_i+1,j+1. In the (k + 1)-th frame, the polarity of the signal voltage is inverted for each pixel. By doing so, while realizing a drive corresponding to dot inversion drive in a pixel configuration including sub-pixels, the polarity of the voltage applied to the signal line can be made the same within one frame period, so that the power consumption for writing the signal voltage of the pixel can be significantly reduced. Note that the voltage applied to all wirings 5086 including wirings 5086_j and 5086_j+1 can be set to a constant voltage. Furthermore, by the pixel configuration and its driving method shown in FIGS. 48(C) and 48(D), the magnitude of the signal voltage written to the pixel can be reduced. This is because the capacitance lines electrically connected to the plurality of sub-pixels included in each pixel are made different for each sub-pixel. That is, by the pixel configuration and its driving method shown in FIGS. 48(A) and 48(B), for sub-pixels to which the same polarity is written within the same frame, the capacitance lines are made common within the same row, and for sub-pixels to which different polarities are written within the same frame, the capacitance lines are made different within the same row. Then, when the writing of each row is completed, the voltage of each capacitance line is changed in the positive direction for the sub-pixel to which the signal voltage with a positive polarity is written and in the negative direction for the sub-pixel to which the signal voltage with a negative polarity is written, so that the signal voltage written to the pixel

[0370] ​​​​​​​​​​​​​​​It can be made smaller. Specifically, the wiring 5086 used as the capacitance line is made into two for each row (wiring 5086-1, wiring 5086-2), and the first pixel electrode of the pixel 5080_i,j and the wiring 5086-1_j are electrically connected via a capacitance element, and the second pixel electrode of the pixel 5080 _i,j and the wiring 5086-2_j are electrically connected via a capacitance element, and the first pixel electrode of the pixel 5080_i+1,j and the wiring 5086-2_j are electrically connected via a capacitance element, and the second pixel electrode of the pixel 5080_i+1,j and the wiring 508 6-1_j are electrically connected via a capacitance element, and the first pixel electrode of the pixel 5080_i,j+1 and the wiring 5086-2_j+1 are electrically connected via a capacitance element, and the second pixel electrode of the pixel 5080_i,j+1 and the wiring 5086-1_j+1 are electrically connected via a capacitance element, and the first pixel electrode of the pixel 5080_i+1,j+1 and the wiring 5086 -1_j+1 are electrically connected via a capacitance element, and the second pixel electrode of the pixel 5080_i+1,j+1 and the wiring 5086-2_j+1 are electrically connected via a capacitance element . However, this is just an example. For example, in the case of a driving method where pixels with a positive-polarity signal voltage written and pixels with a negative-polarity signal voltage written appear every two pixels, the electrical connections of the wiring 5 086-1 and the wiring 5086-2 should also be alternated every two pixels accordingly . Furthermore, in the case where the same-polarity signal voltage is written for all pixels in one row (gate line inversion), in that case, the wiring 5086 may be just one per row . That is, also in the pixel configuration shown in Fig. 48(A), a driving method for reducing the signal voltage written to the pixel, as described using Fig. 48(C) and Fig. 48(D), is used . ​ There can be.

[0371] (Embodiment 11) Next, another example of the configuration of the display device and a method of driving the same will be described. In the case of a display device using a display element having a slow luminance response (long response time) to signal writing, In this embodiment, a liquid crystal display device is used as a display device with a long response time. However, the display element in this embodiment is not limited to this, and may be a signal writing element. A variety of display elements can be used that have a slow response of brightness to crowding.

[0372] In the case of a general liquid crystal display device, the response of brightness to signal writing is slow, and the signal current is not applied to the liquid crystal element. Even when pressure is continued, it may take more than one frame period for the response to complete. Even if moving images are displayed on such a display device, they cannot be reproduced faithfully. Furthermore, in the case of active matrix driving, the time required to write a signal to one liquid crystal element is Usually, the signal writing period (one frame period or one subframe period) is divided by the number of scanning lines. The time it takes for the liquid crystal element to respond is only one scan line selection period. Therefore, most of the response of the liquid crystal element occurs during the period when no signal is written. Here, the dielectric constant of the liquid crystal element changes according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during the period when no signal is written means that The dielectric constant of the liquid crystal element changes when no charge is exchanged with the outside (constant charge state). In other words, in the equation (charge) = (capacity) · (voltage), the charge is in a constant state. Since the capacitance changes with the change in the capacitance, the voltage applied to the liquid crystal element changes according to the response of the liquid crystal element. Therefore, it will change from the voltage at the time of signal writing. Thus, for when driving a liquid crystal element with a slow luminance response that changes from the voltage at the time of signal writing using an active matrix, the voltage applied to the liquid crystal element cannot reach the voltage at the time of signal writing in principle.

[0373] In the display device according to the present embodiment, in order to make the display element respond to a desired luminance within the signal writing period, the signal level at the time of signal writing is set to a pre-corrected value (correction signal), thereby solving the above problems. Furthermore, since the response time of the liquid crystal element becomes shorter as the signal level increases, by writing the correction signal, the response time of the liquid crystal element can also be shortened. Such a driving method of adding such a correction signal is also called over-drive. The over-drive in the present embodiment can make the display element respond to a desired luminance within the signal writing period by correcting the signal level according to the signal writing period, even when the signal writing period is shorter than the period of the image signal input to the display device (input image signal period T in in in in ). When the signal writing period is shorter than the input image signal period T in in in

[0374]

[0374] Next, an example of a method for correcting the signal level at the time of signal writing in an active matrix-driven display device will be described with reference to FIGS. 43(A) and (B). FIG. 43(A) is a graph showing the time change of the luminance of the signal level at the time of signal writing in a certain display element, with the horizontal axis being time and the vertical axis being the signal level at the time of signal writing. FIG. 43(B) is A graph schematically showing the change over time of the display level in a single display element, with the horizontal axis representing time and the vertical axis representing the display level. This is a graph that schematically represents [the change over time of the display level in a single display element]. When the display element is a liquid crystal element, the signal level during signal writing can be the voltage, and the display level can be the transmittance of the liquid crystal element. From here on, it will be explained assuming that the vertical axis in Fig. 4 3(A) is the voltage and the vertical axis in Fig. 43(B) is the transmittance. Note that the over-drive in this embodiment includes cases where the signal level is other than voltage (such as duty ratio, current, etc.). Note that the over-drive in this embodiment also includes cases where the display level is other than transmittance (such as luminance, current, etc.). Note that liquid crystal elements include a normally black type (e.g., VA mode, IPS mode, etc.) that becomes black display when the voltage is 0, and a normally white type (e.g., TN mode, OCB mode, etc.) that becomes white display when the voltage is 0. There is also a normally white type (e.g., TN mode, OCB mode, etc.) that becomes white display when the volta...

Claims

1. A pixel includes a first transistor, a second transistor, a capacitor, and a light-emitting element, wherein a source or drain of the first transistor is electrically connected to a gate of the second transistor, the gate of the second transistor is electrically connected to the capacitor, and a source or drain of the second transistor is electrically connected to the light-emitting element. A display device having: a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer, wherein the first insulating layer has a region functioning as a gate insulating layer of the second transistor and a region functioning as a dielectric of the capacitor, the first oxide layer has a region in contact with an upper surface of the first insulating layer, the first oxide layer has a channel formation region of the first transistor, the second oxide layer has a region in contact with an upper surface of the first insulating layer, the second oxide layer has a channel formation region of the second transistor, the third oxide layer has a region in contact with an upper surface of the first insulating layer, the third oxide layer has a region functioning as one of a pair of electrodes of the capacitor, the second insulating layer has a region disposed above the first oxide layer, a region disposed above the second oxide layer, and a region disposed above the third oxide layer, the second insulating layer has a region functioning as a color filter, the fourth oxide layer has a region disposed above the second insulating layer, the fourth oxide layer has a region functioning as a pixel electrode of the light-emitting element, in a plan view of the pixel, a channel length direction of the first transistor is a direction along a first direction, and in a plan view of the pixel, a channel length direction of the second transistor is a direction along the first direction. A display device.

2. A pixel includes a first transistor, a second transistor, a capacitor, and a light-emitting element, wherein a source or drain of the first transistor is electrically connected to a gate of the second transistor, the gate of the second transistor is electrically connected to the capacitor, and a source or drain of the second transistor is electrically connected to the light-emitting element. A display device having: It has a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer. The first oxide layer, the second oxide layer, and the third oxide layer have translucency. The first insulating layer has a region that functions as a gate insulating layer of the second transistor and a region that functions as a dielectric of the capacitor. The first oxide layer has a region that contacts the upper surface of the first insulating layer. The first oxide layer has a channel formation region of the first transistor. The second oxide layer has a region that contacts the upper surface of the first insulating layer. The second oxide layer has a channel formation region of the second transistor. The third oxide layer has a region that contacts the upper surface of the first insulating layer. The third oxide layer has a region that functions as one of a pair of electrodes of the capacitor. The second insulating layer has a region disposed above the first oxide layer, a region disposed above the second oxide layer, and a region disposed above the third oxide layer. The second insulating layer has a region that functions as a color filter. The fourth oxide layer has a region disposed above the second insulating layer. The fourth oxide layer has a region that functions as a pixel electrode of the light-emitting element. In a plan view of the pixel, the channel length direction of the first transistor is a direction along a first direction. In a plan view of the pixel, the channel length direction of the second transistor is a direction along the first direction. A display device.

3. In claim 1 or claim 2, The first oxide layer, the second oxide layer, and the third oxide layer contain indium. A display device.

4. In claim 1 or claim 2, The first oxide layer, the second oxide layer, and the third oxide layer contain indium, gallium, and zinc. A display device.

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