Light-emitting device

Abstract

To provide driving method for a semiconductor device capable of reducing variation in threshold voltage and variation of mobility of a transistor.SOLUTION: The semiconductor device includes a transistor and a capacitance element electrically connected to the gate of the transistor, in which variation in current flowing the transistor or variation in mobility of the transistor is reduced by discharging, once through the transistor, charge stored in the capacitance element according to a sum voltage of a voltage according to the threshold voltage of the transistor and a video signal voltage.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to semiconductor devices or methods for driving them.

Background Art

[0002] In recent years, flat panel displays such as liquid crystal displays (LCDs) have become widely popular. However, LCDs have various drawbacks such as a narrow viewing angle, a narrow chromaticity range, and a slow response speed. Therefore, as displays that overcome these drawbacks, research on organic EL (electroluminescence, organic light-emitting diode, also called OLED, etc.) displays has been actively conducted (Patent Document 1). However, organic EL displays have a problem that the current characteristics of the transistors for controlling the current flowing through the organic EL elements vary from pixel to pixel. If the current flowing through the organic EL elements (i.e., the current flowing through the transistors) varies, the luminance of the organic EL elements also varies, resulting in a display screen with unevenness. Therefore, methods for correcting the variation in the threshold voltage of the transistors have been studied (Patent Documents 2 to 6).

[0003]

[0004] However, even if the variation in the threshold voltage of the transistors is corrected, if the mobility of the transistors varies, the current flowing through the organic EL elements also varies, resulting in image unevenness. Therefore, methods for correcting not only the threshold voltage of the transistors but also the variation in mobility have been studied (Patent Documents 7 to 8).

Prior Art Documents

[0005] [Patent Document 1] JP 2003-216110 A [Patent Document 2] JP 2003-202833 A [Patent Document 3] JP 2005-31630 A [Patent Document 4] JP 2005-345722 A [Patent Document 5] JP 2007-148129 A [Patent Document 6] International Publication No. 2006 / 060902 Brochure [Patent Document 7] JP 2007-148128 A (paragraph

[0098] ) [Patent Document 8] JP 2007-310311 A (paragraph

[0026] Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the techniques disclosed in Patent Documents 7 and 8, the image signal (video signal) is input to the pixel while correcting the variation in the mobility of the transistor. , various problems arise.

[0007] For example, in order to correct the variation in mobility while inputting a video signal, a different image may be displayed during that time. It is usually impossible to input a video signal directly. Once the size and other factors are decided, the period during which the video signal is input to each pixel (so-called one gate selection period or The maximum value of the mobility variation during one gate selection period is also determined. The increased period during which correction is performed reduces the time required for other processing (such as inputting video signals and acquiring threshold voltages). Therefore, in a pixel, various processes are performed during one gate selection period. This will result in insufficient processing time and inaccurate processing. Or, due to the inability to sufficiently secure the period for correcting the mobility variation, the correction of the mobility becomes insufficient.

[0008] Furthermore, as the number of pixels, frame frequency increases, or the screen size becomes larger, the selection period for one gate per pixel becomes shorter and shorter. Therefore, it becomes impossible to sufficiently secure the input of the video signal to the pixel and the correction of the mobility variation.

[0009] Alternatively, when correcting the mobility variation while inputting the video signal, the correction of the mobility variation is easily affected by the distortion of the waveform of the video signal. Therefore, there is a variation in the degree of correction of the mobility between the case where the distortion of the waveform of the video signal is large and the case where it is small, and accurate correction cannot be performed. That is, accurate correction cannot be achieved.

[0010] Alternatively, when correcting the mobility variation while inputting the video signal to the pixel, it is often difficult to perform dot sequential driving. In dot sequential driving, when inputting the video signal to the pixels in a certain row, the video signal is not input to all the pixels in that row simultaneously, but sequentially one pixel at a time. Therefore, the length of the period during which the video signal is being input varies from pixel to pixel. Therefore, when correcting the mobility variation while inputting the video signal, since the correction period for the mobility variation varies from pixel to pixel, the correction amount also varies from pixel to pixel, and normal correction cannot be performed. Therefore, when correcting the mobility variation while inputting the video signal, it is necessary to perform line sequential driving in which the signal is input to all the pixels in that row simultaneously instead of dot sequential driving. That is, normal correction cannot be performed. Therefore, when correcting the mobility variation while inputting the video signal, it is necessary to perform line sequential driving in which the signal is input to all the pixels in that row simultaneously instead of dot sequential driving. ​

[0011] Furthermore, when performing line sequential driving, compared with the case of performing dot sequential driving, the configuration of the source signal line driving circuit (also referred to as a video signal line driving circuit, a source driver, or a data driver) becomes complex . For example, the source signal line driving circuit in line sequential driving often requires circuits such as a DA converter, an analog buffer, and a latch circuit. However, an analog buffer is often composed of an operational amplifier, a source follower circuit, etc., and is easily affected by variations in the current characteristics of transistors . Therefore, when configuring a circuit using TFTs (thin film transistors), a circuit for correcting variations in the current characteristics of transistors is required, which may increase the circuit scale or increase the power consumption. Therefore, when TFTs are used as the transistors in the pixel portion, it may be difficult to form the pixel portion and the signal line driving circuit on the same substrate. Therefore, it is necessary to create the signal line driving circuit using a means different from the pixel portion, which may increase the cost . Furthermore, it is necessary to connect the pixel portion and the signal line driving circuit using COG (chip on glass) or TAB (tape automated bonding), etc., which may cause contact failures or reduce the reliability . Therefore, it is necessary to create the signal line driving circuit using a means different from the pixel portion, which may increase the cost . Furthermore, it is necessary to connect the pixel portion and the signal line driving circuit using COG (chip on glass) or TAB (tape automated bonding), etc., which may cause contact failures or reduce the reliability . That is, it is necessary to connect the pixel portion and the signal line driving circuit using COG (chip on glass) or TAB (tape automated bonding), etc., which may cause contact failures or reduce the reliability

[0012] Therefore, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the threshold voltage of a transistor. Or, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the mobility of a transistor. Or, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the current characteristics of a transistor . Or, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the mobility of a transistor. Or, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the current characteristics of a transistor . Or, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the current characteristics of a transistor . That is, an object of the present invention is to provide an apparatus or a driving method thereof that reduces the influence of variations in the current characteristics of a transistor Let it be so. Or, to provide a device or its driving method capable of ensuring a long input period of a video signal is an issue. Or, to provide a correction period for reducing the influence of variations in threshold voltage and ensure a long period for it. Or, to provide a device or its driving method capable of ensuring a long correction period for reducing the influence of variations in mobility is an issue. Or, to provide a device or its driving method that is less affected by the rounding of the waveform of a video signal is an issue. Or, to provide a device or its driving method that can use not only line sequential driving but also dot sequential driving is an issue. Or, to provide a device or its driving method capable of forming a pixel and a driving circuit on the same substrate is an issue. Or, to provide a device or its driving method with low power consumption is an issue. Or, to provide a device or its driving method with low cost is an issue. Or, to provide a device or its driving method with a low possibility of causing poor contact at the connection part of wiring is an issue. Or, to provide a highly reliable device or its driving method is an issue. Or, to provide a device or its driving method with a large number of pixels is an issue. Or, to provide a device or its driving method with a high frame frequency is an issue. Or, to provide a device or its driving method with a large panel size is an issue. In addition to these, it is an issue to provide a better device or its driving method using various means is an issue.

Means for Solving the Issues

Means for Solving the Issues

[0013] having a transistor and a capacitive element electrically connected to the gate of the transistor, the transistor The charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage is discharged once through the transistor, thereby reducing the variation in the current flowing through the transistor or the variation in the mobility of the transistor. The charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage is discharged once through the transistor, thereby reducing the variation in the current flowing through the transistor or the variation in the mobility of the transistor. The charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage is discharged once through the transistor, thereby reducing the variation in the current flowing through the transistor or the variation in the mobility of the transistor.

[0014] One exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor, the method comprising discharging, through the transistor, the charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage. One exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor, the method comprising discharging, through the transistor, the charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage. One exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor, the method comprising discharging, through the transistor, the charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage. One exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor, the method comprising discharging, through the transistor, the charge held in the capacitive element in accordance with the voltage corresponding to the sum of the threshold voltage of the transistor and the video signal voltage.

[0015] Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element. Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, and a wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into non-conduction with the display element, and, in a second period, bringing one of the source or drain of the transistor into non-conduction with the gate of the transistor, bringing the other of the source or drain of the transistor into conduction with the wiring, and bringing one of the source or drain of the transistor into conduction with the display element.

[0016] Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, a first wiring, and a second wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, a first wiring, and a second wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, Another exemplary aspect of the present invention is a method of driving a semiconductor device having a transistor, a display element, a first wiring, and a second wiring, the method comprising, in a first period, bringing one of the source or drain of the transistor into conduction with the gate of the transistor, Connect the other of the source or drain to the first wiring to make it conductive, and make the other of the source or drain of the transistor non-conductive with the second wiring. Make one of the source or drain of the transistor non-conductive with the display element. In the second period, make one of the source or drain of the transistor non-conductive with the gate of the transistor, connect the other of the source or drain of the transistor to the first wiring to make it conductive, and make the other of the source or drain of the transistor non-conductive with the second wiring. Connect one of the source or drain of the transistor to the display element to make it conductive. This is a driving method for a semiconductor device. Also, in the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. This is a driving method for a semiconductor device. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. In the third period, supply current to the display element through the transistor. This is a driving method for a semiconductor device. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor and a capacitor element electrically connected to the gate of the transistor, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor, a capacitor element electrically connected to the gate of the transistor, and a display element, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor, and in a third period, current is supplied to the display element through the transistor. Connect the other of the source or drain to the first wiring to make it conductive, and make the other of the source or drain of the transistor non-conductive with the second wiring. Make one of the source or drain of the transistor non-conductive with the display element. In the second period, make one of the source or drain of the transistor non-conductive with the gate of the transistor, connect the other of the source or drain of the transistor to the first wiring to make it conductive, and make the other of the source or drain of the transistor non-conductive with the second wiring. Connect one of the source or drain of the transistor to the display element to make it conductive. This is a driving method for a semiconductor device. Also, in the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. This is a driving method for a semiconductor device.

[0017] Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor and a capacitor element electrically connected to the gate of the transistor, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor, a capacitor element electrically connected to the gate of the transistor, and a display element, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor, and in a third period, current is supplied to the display element through the transistor. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. This is a driving method for a semiconductor device. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. In the third period, supply current to the display element through the transistor. This is a driving method for a semiconductor device. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor and a capacitor element electrically connected to the gate of the transistor, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor.

[0018] Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor, a capacitor element electrically connected to the gate of the transistor, and a display element, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor, and in a third period, current is supplied to the display element through the transistor. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. This is a driving method for a semiconductor device. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. In the third period, supply current to the display element through the transistor. This is a driving method for a semiconductor device. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor and a capacitor element electrically connected to the gate of the transistor, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor. Another exemplary aspect of the present invention is a driving method for a semiconductor device having a transistor, a capacitor element electrically connected to the gate of the transistor, and a display element, wherein in a first period, a voltage that is the sum of a voltage corresponding to the threshold voltage of the transistor and a video signal voltage is held across the capacitor element, and in a second period, the charge held in the capacitor element in accordance with the voltage applied in the first period is discharged through the transistor, and in a third period, current is supplied to the display element through the transistor. In the first period, keep the voltage across the capacitor element, which is connected electrically to the gate of the transistor, at a voltage that is the sum of the threshold voltage of the transistor and the video signal voltage. In the second period, discharge the charge held in the capacitor element in accordance with the voltage applied in the first period through the transistor. In the third period, supply current to the display element through the transistor. This is a driving method for a semiconductor device.

[0019] Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor. In a first period, the capacitive element holds a first voltage, and one of the source or drain of the transistor and the display element are in a non-conductive state. In a second period, the capacitive element holds a second voltage, and one of the source or drain of the transistor and the display element are in a conductive state, and the first voltage is greater than the second voltage. This is a method for driving a semiconductor device. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element. In a first period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. In a second period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off. This is a method for driving a semiconductor device. In a first period, the capacitive element holds a first voltage, and one of the source or drain of the transistor and the display element are in a non-conductive state. In a second period, the capacitive element holds a second voltage, and one of the source or drain of the transistor and the display element are in a conductive state. The first voltage is greater than the second voltage. This is a method for driving a semiconductor device. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element.

[0020] In a first period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element. In a second period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off. This is a method for driving a semiconductor device. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element. In a first period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. In a second period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off. This is a method for driving a semiconductor device. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element. In a first period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. In a second period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off. This is a method for driving a semiconductor device. Another exemplary aspect of the present invention is a method for driving a semiconductor device having a transistor, a first wiring, a first switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the first wiring, a second wiring, a second switch for controlling conduction or non-conduction between one of the source or drain of the transistor and the second wiring, a third switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the gate of the transistor, and a fourth switch for controlling conduction or non-conduction between the other of the source or drain of the transistor and the display element.

[0021] In a first period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. In a second period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off. This is a method for driving a semiconductor device. and a second switch that controls conduction or non - conduction with one of the source or drain of the transistor and a third switch that controls conduction or non - conduction between the other of the source or drain of the transistor and the gate of the transistor and a fourth switch that controls conduction or non - conduction between the other of the source or drain of the transistor and the display element, a driving method of a semiconductor device having In the first period, the second switch and the third switch are turned on and the first switch and the fourth switch are turned off. In the second period, the first switch and the third switch are turned on, and the second switch and the fourth switch are turned off. In the third period, the first switch and the fourth switch are turned on, and the second switch and the third switch are turned off, which is a driving method of a semiconductor device. Note that switches of various forms can be used. Examples include electrical switches and mechanical switches. That is, anything that can control the flow of current is acceptable and is not limited to a specific one. For example, as the switch, a transistor (e.g., bipolar transistor, MOS transistor, etc.), a diode (e.g., PN diode,

[0022] PIN diode, Schottky diode, MIM (Metal Insulator Metal) diode, MIS (Metal Insulator Semiconductor) diode, a transistor connected in diode - fashion, etc.) can be used. Or, a logic circuit combining these can be used as the switch.

[0023] ​​​​​​Examples of mechanical switches include those such as digital micromirror devices (DMDs) and switches using MEMS (micro-electro-mechanical system) technology. The switch has electrodes that can be mechanically moved, and by moving the electrodes, it controls connection and disconnection to operate.

[0024] When using a transistor as a switch, since the transistor operates merely as a switch, the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress the off-current, it is desirable to use a transistor with the polarity having a smaller off-current. Transistors with a small off-current include transistors having an LDD region and transistors having a multi-gate structure. Or, when the potential of the source terminal of the transistor operating as a switch operates at a value close to the potential of the low-potential side power supply (Vss, GND, 0V, etc.), it is desirable to use an N-channel type transistor. Conversely, when the potential of the source terminal operates at a value close to the potential of the high-potential side power supply (Vdd, etc.), it is desirable to use a P-channel type transistor. This is because when the source terminal of an N-channel type transistor operates at a value close to the potential of the low-potential side power supply, and when the source terminal of a P-channel type transistor operates at a value close to the potential of the high-potential side power supply, the absolute value of the voltage between the gate and the source can be increased, so that more accurate operation can be performed as a switch. Furthermore, since the transistor is less likely to perform source follower operation, the magnitude of the output voltage is less likely to decrease.

[0025] ​Note that both an N-channel transistor and a P-channel transistor may be used to form a CMOS type switch. When a CMOS type switch is used, current can flow when either a P-channel transistor or an N-channel transistor is turned on, making it easier for the switch to function. For example, the switch can appropriately output a voltage whether the voltage of the input signal to the switch is high or low. Furthermore, since the voltage amplitude value of the signal for turning the switch on or off can be reduced, the power consumption can also be reduced.

[0026] Note that when a transistor is used as the switch, the switch has an input terminal (either the source terminal or the drain terminal), an output terminal (the other of the source terminal or the drain terminal), and a terminal for controlling conduction (the gate terminal). On the other hand, when a diode is used as the switch, the switch may not have a terminal for controlling conduction. Therefore, using a diode as the switch rather than a transistor can reduce the wiring for controlling the terminals.

[0027] Note that when it is explicitly described that A and B are connected, it shall include the case where A and B are electrically connected, the case where A and B are functionally connected, and the case where A and B are directly connected. Here, A and B are assumed to be objects (e.g., devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to a predetermined connection relationship, such as the connection relationship shown in the figure or the text, but shall also include

[0028] For example, when A and B are electrically connected, one or more elements (e.g., switches, transistors, capacitive elements, inductors, resistive elements, diodes, etc.) that enable the electrical connection between A and B may be connected between A and B. Alternatively, when A and B are functionally connected, one or more circuits (e.g., logic circuits (such as inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (such as DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (such as power supply circuits (step-up circuits, step-down circuits, etc.), level shifter circuits that change the potential level of signals, etc.), voltage sources, current sources, switching circuits, amplification circuits (circuits that can increase the signal amplitude or current amount, such as operational amplifiers, differential amplification circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) that enable the functional connection between A and B may be connected between A and B. For example, even if another circuit is interposed between A and B, when the signal output from A is transmitted to B, A and B are considered to be functionally connected. Note that when it is explicitly described that A and B are electrically connected, it includes the case where A and B are electrically connected (i.e., connected with another element or another circuit interposed between A and B), the case where A and B are functionally connected (i.e., functionally connected with another circuit interposed between A and B), and the case where A and B are directly connected (i.e., connected without another element or another circuit interposed between A and B). That is, when it is explicitly described that they are electrically connected, it is considered the same as when it is only explicitly described that they are connected.

[0029] ​

[0030] Note that a display element, a display device having the display element, a light-emitting element, and a device having the light-emitting element can use various forms and have various elements. For example, as the display element, the display device, the light-emitting element, or the light-emitting device, an EL (electroluminescence) element (an EL element including an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an LE D (a white LED, a red LED, a green LED, a blue LED, etc.), a transistor (a transistor that emits light according to an electric current), an electron-emitting element, a liquid crystal element, an electronic ink, an electrophoretic element, a gr ating light valve (GLV), a plasma display (PDP), a digital micromirror device (DMD), a piezoelectric ceramic display, a carbon nanotube, etc., can have a display medium in which contrast, luminance, reflectance, transmittance, etc. change due to an electromagnetic action. Note that as a display device using an EL element, there is an EL display, and as a display device using an electron-emitting element, there are a field emission display (FED ), an SED type flat panel display (SED: Surface-conduction Electron-emitter Display), etc. As a display device using a liquid crystal element, there are a liquid crystal display (a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, a projection liquid crystal display), an electronic ink ), and as a display device using an electrophoretic element, there is an electronic paper.

[0031] Note that the EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. Note that as the EL layer, those using light emission (fluorescence) from singlet excitons are used, Those that utilize light emission (phosphorescence) from triplet excitons, those that utilize light emission (fluorescence) from singlet excitons, and those that include both those that utilize light emission (phosphorescence) from triplet excitons, those formed of organic substances, those formed of inorganic substances, and those that include both those formed of organic substances and those formed of inorganic substances, those having polymeric materials, low molecular weight materials, and those that include both polymeric materials and low molecular weight materials, etc. However, it is not limited to this, and various things can be had as the EL element. formed by organic substances, formed by inorganic substances, and those that include both those formed by organic substances and those formed by inorganic substances, polymeric materials, low molecular weight materials, and those that include both polymeric materials and low molecular weight materials, etc. formed by organic substances, formed by inorganic substances, and those that include both those formed by organic substances and those formed by inorganic substances, polymeric materials, low molecular weight materials, and those that include both polymeric materials and low molecular weight materials, etc. formed by organic substances, formed by inorganic substances, and those that include both those formed by organic substances and those formed by inorganic substances, polymeric materials, low molecular weight materials, and those that include both polymeric materials and low molecular weight materials, etc. can have. However, it is not limited to this, and various things can be had as the EL element. can have. However, it is not limited to this, and various things can be had as the EL element.

[0032] Note that as the transistor, various forms of transistors can be used. Therefore, there is no limitation on the type of transistor used. For example, thin film transistors (TFTs) having an amorphous semiconductor film typified by amorphous silicon, polycrystalline silicon, formed by organic substances, formed by inorganic substances, and those that include both those formed by organic substances and those formed by inorganic substances, polymeric materials, low molecular weight materials, and those that include both polymeric materials and low molecular weight materials, etc. microcrystalline (also referred to as microcrystal, nanocrystal, semi-amorphous) silicon, etc. can be used. When using a TFT, there are various merits. For example, since it can be manufactured at a lower temperature than in the case of single crystal silicon, the manufacturing cost can be reduced, or the size of the manufacturing apparatus can be increased. Since the manufacturing apparatus can be made large, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured simultaneously, it can be manufactured at low cost. Further, since the manufacturing temperature is low, a substrate with poor heat resistance can be used. Therefore, a transistor can be manufactured on a substrate having light transmittance. And the transmission of light in the display element can be controlled using the transistor on the substrate having light transmittance. Or, since the film thickness of the transistor is thin, a part of the film constituting the transistor can transmit light. Therefore, the aperture ratio can be improved. the manufacturing cost can be reduced, or the size of the manufacturing apparatus can be increased. Since the manufacturing apparatus can be made large, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured simultaneously, it can be manufactured at low cost. Further, since the manufacturing temperature is low, a substrate with poor heat resistance can be used. Therefore, a transistor can be manufactured on a substrate having light transmittance. And the transmission of light in the display element can be controlled using the transistor on the substrate having light transmittance. Or, since the film thickness of the transistor is thin, a part of the film constituting the transistor can transmit light. And the transmission of light in the display element can be controlled using the transistor on the substrate having light transmittance. Or, since the film thickness of the transistor is thin, a part of the film constituting the transistor can transmit light. Therefore, the aperture ratio can be improved. Therefore, the aperture ratio can be improved.

[0033] When manufacturing polycrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, making it possible to manufacture transistors with good electrical characteristics. As a result, a gate driver circuit (scanning line driving circuit), a source driver circuit (signal line driving circuit ), and a signal processing circuit (such as a signal generation circuit, a gamma correction circuit, a DA conversion circuit, etc.) can be integrally formed on a substrate.

[0034] When manufacturing microcrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, making it possible to manufacture transistors with good electrical characteristics. In this case, it is possible to improve the crystallinity only by applying heat treatment without performing laser irradiation. As a result, a part of the gate driver circuit (scanning line driving circuit) and the source driver circuit (such as an analog switch) can be integrally formed on a substrate. Furthermore, when laser irradiation is not performed for crystallization, non-uniformity in the crystallinity of silicon can be suppressed. Therefore, an image with improved image quality can be displayed.

[0035] However, it is possible to manufacture polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

[0036] Note that improving the crystallinity of silicon to polycrystalline or microcrystalline, etc., is preferably performed for the entire panel, but is not limited thereto. The crystallinity of silicon may be improved only in a part of the panel area. Selectively improving the crystallinity is possible, for example, by selectively irradiating with laser light. For example, in the peripheral circuit area which is an area other than the pixels, Only the domain may be irradiated with laser light. Or, only the regions such as the gate driver circuit and the source driver circuit may be irradiated with laser light. Alternatively, only a part (for example, an analog switch) of the source driver circuit region may be irradiated with laser light. As a result , crystallization of silicon can be improved only in the regions where it is necessary to operate the circuit at high speed. Since the pixel region has low necessity for high-speed operation, the pixel circuit can operate without problems even if the crystallinity is not improved. Since the number of regions where crystallinity needs to be improved can be reduced, the manufacturing process can also be shortened, throughput can be improved, and manufacturing costs can be reduced. Since the required number of manufacturing apparatuses can be reduced, manufacturing costs can be reduced.

[0037] Alternatively, transistors can be formed using a semiconductor substrate, an SOI substrate, or the like. With these, transistors with high current supply ability and small size can be manufactured. Using these transistors, low power consumption or high integration of the circuit can be achieved.

[0038] Alternatively, transistors having a compound semiconductor or an oxide semiconductor such as ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO can be used, and further, thin film transistors in which these compound semiconductors or oxide semiconductors are thinned can be used. With these, the manufacturing temperature can be lowered, for example, it becomes possible to manufacture transistors at room temperature. As a result, transistors can be directly formed on a substrate with low heat resistance, for example, a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors , it can be used not only for the channel part of the transistor but also for other applications. For example, these compound semiconductors or oxide semiconductors can be used as resistive elements, pixel electrodes, and electrodes with transparency. Furthermore, since they can be formed simultaneously with the transistor or formed, the cost can be reduced.

[0039] Alternatively, transistors formed using inkjet or printing methods can be used. With these, it becomes possible to manufacture at room temperature, at low vacuum, or on a large substrate. Since manufacturing is possible without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, since there is no need to use a resist, the material cost is reduced and the number of processes can be reduced. Additionally, since the film is applied only to the necessary parts, compared to the manufacturing method of etching after forming a film over the entire surface, less material is wasted and the cost can be kept low.

[0040] Alternatively, transistors having an organic semiconductor or carbon nanotubes can be used. With these, transistors can be formed on a substrate that can be bent. A semiconductor device using such a substrate can be made resistant to impact.

[0041] Note that transistors can be formed using various substrates. The type of substrate is not particularly limited. As such a substrate, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a stainless steel substrate, a substrate having a stainless steel foil, etc. can be used. Or, using a certain substrate, a transistor Form a dissta, and then transfer the transistor to another substrate and place the transistor on another substrate. It may be arranged. As the substrate on which the transistor is transferred, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, hemp), synthetic fibers (nylon, polyurethane, polyester ester), or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), a leather substrate, a rubber substrate, a stainless steel substrate, a substrate having a stainless steel foil, etc. can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of an animal such as a human can be used as the substrate. Or, a transistor can be formed using a certain substrate, and the substrate can be polished to make it thinner. As the substrate to be polished, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a stainless steel substrate, a substrate having a stainless steel foil, etc. can be used. By using these substrates, it is possible to form a transistor with good characteristics, form a transistor with low power consumption, manufacture a durable device, impart heat resistance, reduce weight, or reduce thickness.

[0042] Note that the configuration of the transistor can take various forms and is not limited to a specific configuration. For example, a multi-gate structure with two or more gate electrodes can be applied. When a multi- gate structure is used, the channel regions are connected in series, so that a configuration in which a plurality of transistors are connected in series is formed. With the multi-gate structure, it is possible to reduce the off-current and improve the breakdown voltage (improve reliability) of the transistor. Alternatively, with the multi-gate structure, saturation When operating in the region, even if the drain-source voltage changes, the drain-source current does not change much, and the slope of the voltage-current characteristic can be made flat. Utilizing the characteristic that the slope of the voltage-current characteristic is flat, an ideal current source circuit or an active load with a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized.

[0043] As another example, a structure in which gate electrodes are arranged above and below the channel can be applied. By adopting a structure in which gate electrodes are arranged above and below the channel, the channel region increases, so that the current value can be increased. Or, by adopting a structure in which gate electrodes are arranged above and below the channel, the depletion layer is likely to be formed, so that the S value can be improved. Note that by adopting a configuration in which gate electrodes are arranged above and below the channel, a configuration is obtained in which a plurality of transistors are connected in parallel.

[0044] A structure in which a gate electrode is arranged above the channel region, a structure in which a gate electrode is arranged below the channel region, a positive stagger structure, a reverse stagger structure, a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or a configuration in which the channel regions are connected in series can also be applied. Further, a structure in which a source electrode or a drain electrode overlaps with the channel region (or a part thereof) can also be applied. By adopting a structure in which a source electrode or a drain electrode overlaps with the channel region (or a part thereof), it is possible to prevent the operation from becoming unstable due to the accumulation of charges in a part of the channel region. Or, a structure provided with an LDD region can also be applied. ​​​​It is applicable. By providing an LDD region, reduction of the off-current or improvement of the breakdown voltage (improvement of reliability) of the transistor can be achieved. Alternatively, by providing an LDD region, even when the drain-source voltage changes during operation in the saturation region, the drain-source current hardly changes, and the slope of the voltage-current characteristics can be made flat. In addition, various types of transistors can be used and can be formed using various substrates. Therefore, all of the circuits necessary to realize a predetermined function can also be formed on the same substrate. For example, all of the circuits necessary to realize a predetermined function can also be formed using various substrates such as a glass substrate, a plastic substrate, a single-crystal substrate, or an SOI substrate. By forming all of the circuits necessary to realize a predetermined function on the same substrate, cost reduction due to reduction of the number of components or improvement of reliability due to reduction of the number of connection points with circuit components can be achieved. Alternatively, it is also possible that a part of the circuits necessary to realize a predetermined function is formed on a certain substrate and another part of the circuits necessary to realize a predetermined function is formed on another substrate. That is, all of the circuits necessary to realize a predetermined function do not necessarily have to be formed using the same substrate. For example, a part of the circuits necessary to realize a predetermined function is formed by transistors on a glass substrate, and another part of the circuits necessary to realize a predetermined function is formed on a single-crystal substrate, and an IC chip composed of transistors formed using the single-crystal substrate is connected to the glass substrate by COG (Chip On Glass).

[0045] ​It is also possible to arrange the IC chip on the substrate. Alternatively, the IC chip can be connected to the glass substrate using TA B (Tape Automated Bonding) or a printed circuit board. In this way, since a part of the circuit is formed on the same substrate, cost reduction can be achieved by reducing the number of components, or reliability can be improved by reducing the number of connection points with circuit components. Alternatively, since the power consumption of the circuit in the part with a high driving voltage and a high driving frequency becomes large, the circuit in such a part is not formed on the same substrate. Instead, for example, the circuit of that part is formed on a single crystal substrate, and an IC chip configured with that circuit is used, so that an increase in power consumption can be prevented. Incidentally, a transistor is an element having at least three terminals including a gate, a drain, and a source, and has a channel region between the drain region and the source region, and current can flow through the drain region, the channel region, and the source region. Here, since the source and the drain change depending on the structure and operating conditions of the transistor, etc., it is difficult to limit which one is the source or the drain. Therefore, the regions functioning as the source and the drain may not be called the source or the drain. In that case, as an example, they may be denoted as the first terminal and the second terminal respectively. Alternatively, they may be denoted as the first electrode and the second electrode respectively. Alternatively, there are cases where they are denoted as the first region and the second region. Note that a semiconductor device includes semiconductor elements (such as transistors, diodes, thyristors, etc.).

[0046]

[0047] This refers to a device having a circuit. Furthermore, it is a device that can function by utilizing semiconductor characteristics Generally, it may be called a semiconductor device. Or, a device having a semiconductor material is called a semiconductor device as well.

[0048] Note that a display device refers to a device having display elements. Note that the display device may include a plurality of pixels including the display elements Note that the display device may include a peripheral drive circuit for driving a plurality of pixels. Note that the peripheral drive circuit for driving a plurality of pixels may be formed on the same substrate as the plurality of pixels Note that the display device may include a peripheral drive circuit arranged on the substrate by wire bonding or bumps, so-called chip-on-glass (COG) connected IC chips, or IC chips connected by TAB or the like. Note that the display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached Note that the display device may include a printed wiring board (PWB) connected via a flexible printed circuit (FPC) or the like and to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. Note that the display device may include an illumination device, a housing, an audio input / output device, an optical sensor, etc. Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included

[0049] Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Note that when it is explicitly described that B is formed on A, or B is formed on A, it is not limited to the case where B is directly formed in contact with A. The case where they are not in direct contact, that is, the case where another object intervenes between A and B is also included Here, A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers , etc.).

[0050] Therefore, for example, when it is explicitly described that layer B is formed on (or over) layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that layer B is formed on layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that layer B is formed on layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that layer B is formed on layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that layer B is formed on layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer.

[0051] Furthermore, the same applies when it is explicitly described that B is formed above A. It is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer. When it is described that B is formed above A, it is not limited to B being directly in contact with A, and also includes the case where another object is interposed between A and B. Therefore, for example, when it is described that layer B is formed above layer A, it includes the case where layer B is formed directly in contact with layer A, and the case where another layer (for example, layer C or layer D, etc.) is formed directly in contact with layer A and layer B is formed directly on top of it. Note that another layer (for example, layer C or layer D, etc.) may be a single layer or a multi - layer.

[0052] When it is explicitly described that B is formed on A or above A, it also includes the case where B is formed obliquely above A. When it is explicitly described that B is formed on A or above A, it also includes the case where B is formed obliquely above A.

[0053] The same also applies to the case where B is below A or beneath A.

[0054] For those explicitly described as singular, it is desirable that they be singular. However, it is not limited to this, and a plurality is also possible. Similarly, for those explicitly described as a plurality it is desirable that there be a plurality. However, it is not limited to this , and it is also possible to be singular.

[0055] In the drawings, the size, layer thickness, or area may be exaggerated for clarity . Therefore, it is not necessarily limited to that scale.

[0056] The drawings schematically show ideal examples and are not limited to the shapes or values shown in the drawings . For example, it can include variations in shape due to manufacturing techniques, variations in shape due to errors, signals, voltages, or currents variations due to noise, or variations in signals, voltages, or currents due to timing deviations, etc.

[0057] Technical terms are often used for the purpose of describing specific embodiments or examples, etc., and are not limited to this .

[0058] For words that are not defined (including scientific and technical words such as technical terms or academic terms), they can be used with a meaning equivalent to the general meaning understood by those skilled in the art. Words defined by a dictionary, etc. should be interpreted in a meaning that is not contradictory to the background of the related technology preferably.

[0059] Terms such as first, second, third, etc. are used to distinguish various elements, members, regions, layers, areas from others. Therefore, terms such as first, second, third, etc. do not limit the number of elements, members, regions, layers, areas, etc. Furthermore, for example, "the first" can be replaced with "the second" or "the third", etc. ​ Effect of the Invention

[0060] The effect of variations in the threshold voltage of the transistor can be reduced. The effect of variations in the mobility of the transistor can be reduced. It is possible to reduce the effect of variations in characteristics, or to secure a long input period for the video signal. Alternatively, a correction period for reducing the effect of variations in threshold voltage can be set. Or, the correction period to reduce the effect of the mobility variation can be secured for a long time. It is possible to secure a long period of time. Or, it is possible to make it less susceptible to the distortion of the video signal waveform. Alternatively, not only line sequential driving but also point sequential driving can be used. In this case, the pixel and the driver circuit can be formed on the same substrate. Or, the cost can be reduced. Or, the connection of the wiring part can be improved. It is possible to reduce contact failures, improve reliability, or improve pixel count. You can increase the number of frames, or you can increase the frame frequency, or The panel size can be increased. [Brief description of the drawings]

[0061]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Embodiments for Carrying Out the Invention

[0062] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and it will be easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore it should not be construed as being limited to the description of the present embodiment. In the configuration of the present invention described below, the same components are denoted by common reference numerals among different drawings, and detailed descriptions of the same parts or parts having the same functions are omitted.

[0063] Note that in each of the following embodiments, various figures will be used for description. In that case, in one embodiment, the content described in each figure (even part of the content) can be freely applied, combined, or replaced with the content described in another figure (even part of the content). Similarly, the content described in each figure of one or more embodiments can be freely applied, combined, or replaced with the content described in each figure of one or more (Part of the content may also be) applicable, combinable, or replaceable freely with respect to the content described in the diagrams of one or more other embodiments (part of the content may also be). It can be done.

[0064] (Embodiment 1) FIG. 1 shows an example of a driving method, driving timing, and the circuit configuration at that time when correcting variations in current characteristics such as the mobility of a transistor.

[0065] FIG. 1(a) shows the circuit configuration during the period of correcting variations in current characteristics such as the mobility of transistor 101. Note that the circuit configuration shown in FIG. 1(a) is a circuit configuration for discharging the charge held in the gate of the transistor in order to correct variations in current characteristics such as the mobility of transistor 101, and in practice, the connection relationship of this circuit configuration is realized by controlling the on or off of a plurality of switches provided between wirings. In FIG. 1(a), the source (or drain, first terminal, first electrode) of transistor 101 is in a conductive state with wiring 103. The drain (or source, second terminal, second electrode) of transistor 101 is in a conductive state with the gate of transistor 101. The first terminal (or first electrode) of capacitor element 102 is in a conductive state with the gate of transistor 101. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103. The first terminal (or first electrode) of display element 105 is in a non-conductive state with the drain ( or source, second terminal, second electrode) of transistor 101.

[0066] In FIG. 1(a), the source (or drain, first terminal, first electrode) of transistor 101 is in a conductive state with wiring 103. The drain (or source, second terminal, second electrode) of transistor 101 is in a conductive state with the gate of transistor 101. The first terminal (or first electrode) of capacitor element 102 is in a conductive state with the gate of transistor 101. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103. The first terminal (or first electrode) of capacitor element 102 is in a conductive state with the gate of transistor 101. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103. The first terminal (or first electrode) of capacitor element 102 is in a conductive state with the gate of transistor 101. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103. The second terminal (or second electrode) of capacitor element 102 is in a conductive state with wiring 103.

[0067] The first terminal (or first electrode) of display element 105 is in a non-conductive state with the drain ( or source, second terminal, second electrode) of transistor 101. The gate of transistor 101 Terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode), and the first terminal (or first electrode) of the display element 105 are desirably in a non-conductive state. However, it is not limited to this. The second terminal (or second electrode) of the display element 105 is desirably in a conductive state with the wiring 106, but it is not limited to this. The wiring 104 is in a non-conductive state with the drain (or source, second terminal, second electrode) of the transistor 101. Furthermore, the wiring 104 is in a non-conductive state with the first terminal (or first electrode) of the capacitor element 102. Note that, as shown in Fig. 1(a), the wiring 104 is also desirably in a non-conductive state with terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this.

[0068] In addition, a video signal or a predetermined voltage may be supplied to the transistor 101 or the capacitor element 102 via the wiring 104. Therefore, the wiring 104 may be called a source signal line, a video signal line, or a video signal line. Before the connection configuration as shown in Fig. 1(a), that is, before correcting the variations in current characteristics such as the mobility of the transistor 101, it is desirable that the capacitor element 102 holds a voltage corresponding to the threshold voltage of the transistor 101. And it is desirable that a video signal (video signal) is input to the capacitor element 102 via the wiring 104. Therefore, the capacitor element 102 has a voltage corresponding to the threshold voltage of the transistor 101 and a video signal. Note that, as shown in Fig. 1(a), the wiring 104 is also desirably in a non-conductive state with terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this. Furthermore, the wiring 104 is in a non-conductive state with the drain (or source, second terminal, second electrode) of the transistor 101. In addition, a video signal or a predetermined voltage may be supplied to the transistor 101 or the capacitor element 102 via the wiring 104. Therefore, the wiring 104 may be called a source signal line, a video signal line, or a video signal line. However, it is not limited to this. The second terminal (or second electrode) of the display element 105 is desirably in a conductive state with the wiring 106, but it is not limited to this.

[0069] Before the connection configuration as shown in Fig. 1(a), that is, before correcting the variations in current characteristics such as the mobility of the transistor 101, it is desirable that the capacitor element 102 holds a voltage corresponding to the threshold voltage of the transistor 101. And it is desirable that a video signal (video signal) is input to the capacitor element 102 via the wiring 104. Therefore, the capacitor element 102 has a voltage corresponding to the threshold voltage of the transistor 101 and a video signal. Furthermore, the wiring 104 is in a non-conductive state with the first terminal (or first electrode) of the capacitor element 102. Note that, as shown in Fig. 1(a), the wiring 104 is also desirably in a non-conductive state with terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this. However, it is not limited to this. The second terminal (or second electrode) of the display element 105 is desirably in a conductive state with the wiring 106, but it is not limited to this.

[0070] Before the connection configuration as shown in Fig. 1(a), that is, before correcting the variations in current characteristics such as the mobility of the transistor 101, it is desirable that the capacitor element 102 holds a voltage corresponding to the threshold voltage of the transistor 101. And it is desirable that a video signal (video signal) is input to the capacitor element 102 via the wiring 104. Therefore, the capacitor element 102 has a voltage corresponding to the threshold voltage of the transistor 101 and a video signal. Furthermore, the wiring 104 is in a non-conductive state with the first terminal (or first electrode) of the capacitor element 102. Note that, as shown in Fig. 1(a), the wiring 104 is also desirably in a non-conductive state with terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this. Before the connection configuration as shown in Fig. 1(a), that is, before correcting the variations in current characteristics such as the mobility of the transistor 101, it is desirable that the capacitor element 102 holds a voltage corresponding to the threshold voltage of the transistor 101. And it is desirable that a video signal (video signal) is input to the capacitor element 102 via the wiring 104. Therefore, the capacitor element 102 has a voltage corresponding to the threshold voltage of the transistor 101 and a video signal. Furthermore, the wiring 104 is in a non-conductive state with the first terminal (or first electrode) of the capacitor element 102. Note that, as shown in Fig. 1(a), the wiring 104 is also desirably in a non-conductive state with terminals, wirings, or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this. However, it is not limited to this. The second terminal (or second electrode) of the display element 105 is desirably in a conductive state with the wiring 106, but it is not limited to this. It is desirable to maintain the sum of the voltages. Therefore, in the state before FIG. 1(a), That is, before compensating for variations in current characteristics such as the mobility of the transistor 101, The wiring 104 is connected to the drain, source, and gate of the transistor 101 and the capacitor 102. At least one of the first terminal (or first electrode), the second terminal (or second electrode), etc. It is desirable that both of them are in a conductive state and that the input operation of the video signal has already been performed.

[0071] Note that the capacitor 102 controls the voltage and It is desirable to hold the sum of the video signal voltages, but this is not limiting. The element 102 does not hold a voltage corresponding to the threshold voltage of the transistor 101. It is also possible that only the video signal voltage is held.

[0072] When a voltage is held by the capacitor 102, a switching noise or the like may cause a However, this is within the range that does not affect the actual operation. Therefore, for example, the threshold voltage of the transistor 101 is When a voltage corresponding to the voltage and the sum of the video signal voltage is input to the capacitance element 102, The voltage held in the capacitance element 102 at this time does not completely match the input voltage. The actual operation may differ slightly due to noise and other factors. It's not a problem if the timing is a little off as long as it doesn't cause any disturbance.

[0073] Next, in FIG. 1(b), a current is supplied to the display element 105 via the transistor 101. The circuit configuration shown in Fig. 1(b) is a transistor. It is a circuit configuration for supplying current from the transistor 101 to the display element 105. Actually, by controlling the on or off of a plurality of switches provided between the wirings, the connection relationship of the circuit configuration is realized.

[0074] The source (or drain, first terminal, first electrode) of the transistor 101 is in conduction with the wiring 10 3. The drain (or source, second terminal, second electrode) of the transistor 101 is in conduction with the first terminal (or first electrode) of the display element 105. The drain (or source, second terminal, second electrode) of the transistor 101 is in non - conduction with the gate of the transistor 101. The first terminal (or first electrode) of the capacitor element 102 is in conduction with the gate of the transistor 101. The second terminal (or second electrode) of the capacitor element 102 is in conduction with the wiring 103. The second terminal (or second electrode) of the display element 105 is in conduction with the wiring 106. The second terminal (or second electrode) of the capacitor element 102 is in conduction with the wiring 103. The second terminal (or second electrode) of the display element 105 is in conduction with the wiring 106.

[0075] The wiring 104 is in non - conduction with the drain (or source, second terminal, second electrode ) of the transistor 101. Further, the wiring 104 is in non - conduction with the first terminal (or first electrode) of the capacitor element 102. Note that, as shown in FIG. 1(b), the wiring 104 is preferably in non - conduction with terminals, wirings or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but is not limited thereto. That is, during the period when variations in current characteristics such as the mobility of the transistor 101 are corrected (FIG. 2), the wiring 104 is preferably in non - conduction with terminals, wirings or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but is not limited thereto. It is desirable that the wiring 104 is also in non - conduction with terminals, wirings or electrodes other than the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the capacitor element 102, but it is not limited to this.

[0076] That is, during the period when variations in current characteristics such as the mobility of the transistor 101 are corrected (FIG. As shown in Fig. 1(a), current is supplied to the display element 105 through the transistor 101. When transitioning to the period (Fig. 1(b)), at least the conduction state between the drain ( or source, second terminal, second electrode) of the transistor 101 and the gate of the transistor 101 and the conduction state between the drain (or source, second terminal, second electrode) of the transistor 101 and the first terminal (or first electrode) of the display element 105 will change. However, it is not limited to this, and the conduction states of other parts can also change. And, as described above, in order to be able to control the conduction state, it is desirable to arrange elements such as switches, transistors, or diodes. Then, using the said element to control the conduction state, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b). Therefore, if a connection situation like Figs. 1(a) and 1(b) can be realized, elements such as switches, transistors, or diodes can be freely arranged, and their number or connection structure is not limited either. As an example, as shown in Fig. 2(a), connect the first terminal of the switch 201 electrically to the gate of the transistor 1 01, and connect the second terminal electrically to the drain (or source, second terminal, second electrode) of the transistor 101. And, connect the first terminal of the switch 202 electrically to the drain (or source, second terminal, second electrode) of the transistor 101, and connect the second terminal electrically to the display element 105. In this way, by arranging two switches, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b).

[0077] As an example, as shown in Fig. 2(a), electrically connect the first terminal of the switch 201 to the gate of the transistor 1 01, and electrically connect the second terminal to the drain (or source, second terminal, second electrode) of the transistor 101. Then, electrically connect the first terminal of the switch 202 to the drain (or source, second terminal, second electrode) of the transistor 101, and electrically connect the second terminal to the display element 105. In this way, by arranging two switches, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b). terminal of the switch 202 to the drain (or source, second terminal, second electrode) of the transistor 101, and electrically connect the second terminal to the display element 105. In this way, by arranging two switches, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b). Electrically connect the second terminal to the display element 105. In this way, by arranging two switches, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b). By arranging two switches in this manner, a circuit configuration can be realized that realizes the connection situations of Figs. 1(a) and 1(b).

[0078] Another example different from Fig. 2(a) is shown in Figs. 2(b) and 2(c). In Fig. 2(b), the position of switch 202 in Fig. 2(a) is changed to a position like switch 205 in Fig. 2(b). In Fig. 2(c), switch 202 in Fig. 2(a) is deleted. Instead, for example, by changing the potential of wiring 106, display element 105 becomes non-conductive, and the same operation as in Fig. 1(a) can be realized. And when further switches or transistors are needed, they are arranged as appropriate. Note that it is described that A is in a conductive state with B. In that case, various elements can be connected between A and B. For example, it is possible that a resistance element, a capacitance element, a transistor

[0079] , a diode, etc. are connected between A and B in series connection or parallel connection. Similarly, it is described that A is in a non-conductive state with B. In that case, various elements can be connected between A and B. As long as A and B are made non-conductive , it is possible that various elements are connected in other parts. For example, it is possible that elements such as a resistance element, a capacitance element, a transistor, a diode are connected in series connection or parallel connection. Therefore, for example, in the circuit of Fig. 2(a), the circuit when switch 203 is added is shown in Fig. 2(d), the circuit when switch 204 is added is shown in Fig. 2(e), and the circuit when switch 206 is added is shown in Fig. 2(f). In this way, during the period when variations in current characteristics such as the mobility of transistor 101 are corrected

[0080] For example, in the circuit of Fig. 2(a), when switch 203 is added, the circuit is shown in Fig. 2(d), when switch 204 is added, the circuit is shown in Fig. 2(e), and when switch 206 is added, the circuit is shown in Fig. 2(f).

[0081] During the period when variations in current characteristics such as the mobility of transistor 101 are corrected ​In (Fig. 1(a)), variations in current characteristics such as the mobility of transistor 101 are reduced. Therefore, during the period when current is supplied to display element 105 (Fig. 1(b)), variations in the current supplied to display element 105 are also reduced. As a result, variations in the display state of display element 105 are also reduced, and high-quality display can be performed.

[0082] The circuit configurations shown in Figs. 2(a) to 2(f) described above are shown as an example of realizing the circuit configurations shown in Figs. 1(a) and 1(b). In actuality, in addition to the plurality of switches shown in Figs. 2(a) to 2(f), the connection relationship of the circuit configuration is realized by controlling the on or off of a plurality of switches provided between wirings.

[0083] Note that the period when current is supplied to display element 105 (Fig. 1(b)) should desirably appear immediately after the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected. This is because processing is performed during the period when current is supplied to display element 105 (Fig. 1(b)) using the gate potential (charge held in capacitor element 102) of transistor 101 obtained during the period when current is supplied to display element 105 (Fig. 1(b)). However, it is not limited to causing the period when current is supplied to display element 105 (Fig. 1(b)) to appear immediately after the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected. During the period in which variations in current characteristics such as the mobility of transistor 101 are corrected (Fig. 1(a)), the charge amount of capacitor element 102 changes, and the charge amount of capacitor element 102 determined at the end of the period is used when current is supplied to display element 105. ​​​​​​​When there is little change during a given period (Fig. 1(b)), etc., the transi During the period (Fig. 1(a)) when variations in current characteristics such as the mobility of transistor 101 are corrected, and the Another process may be provided during the period (Fig. 1(b)) when current is supplied to the display element 105. A period may be provided.

[0084] Therefore, the charge held in the capacitive element 102 at the end of the period when variations in current characteristics such as the mobility of the transistor 101 are corrected, and the charge held in the capacitive element 102 at the start of the period when current is supplied to the display element 105 are preferably approximately the same amount. However, due to the influence of noise, etc., there may be a slight difference in the charge amounts of both. Specifically, the difference in the charge amounts of both is preferably within 10%, more preferably within 3%. If the difference in the charge amounts is within 3%, the difference is not visually recognizable when the display element in which the difference is reflected is viewed with the human eye, which is more desirable.

[0085] Therefore, in the period (Fig. 1(a)) when variations in current characteristics such as the mobility of the transistor 101 are corrected, Fig. 3(a) shows how the voltage-current characteristics change. The charge stored in the capacitive element 102 is discharged through the between the source and drain of the transistor 101 during the period (Fig. 1(a)) when variations in current characteristics such as the mobility of the transistor 101 are corrected. As a result, the amount of charge held in the capacitive element 102 decreases, and the voltage held in the capacitive element 102 also decreases. Therefore, the absolute value of the voltage between the gate and source of the transistor 101 also decreases. In the capacitive element 102 The stored charge is discharged through transistor 101, so the amount of charge discharged depends on the current characteristics of transistor 101. That is, if the mobility of transistor 101 is high, more charge will be discharged. Or, if the ratio (W / L) of the channel width W to the channel length L of transistor 101 is large, more charge will be discharged. Or, if the absolute value of the voltage between the gate and the source of transistor 101 is large (that is, if the absolute value of the voltage held by capacitor element 102 is large), more charge will be discharged. Or, if the parasitic resistance in the source region and drain region of transistor 101 is small, more charge will be discharged. Or, if the resistance in the LDD region of transistor 101 is small, more charge will be discharged. Or, if the contact

[0086] resistance at the contact hole electrically connected to transistor 101 is small, more charge will be discharged. Therefore, before discharge, that is, during the period when the variations in current characteristics such as the mobility of transistor 101 are being corrected (Figure 1(a)), the graph of the voltage-current characteristics changes to a curve with a smaller slope as a result of part of the charge stored in capacitor element 102 being discharged. And, for example, the difference between the graphs of the voltage-current characteristics before and after discharge becomes larger as the mobility of transistor 101 is higher. In the case of (i), after discharge, the amount of change in the slope becomes small. As a result, after discharge, the difference in the graphs of the voltage-current characteristics becomes small between the case where the mobility of the transistor 101 is high and the case where it is low, and the influence of the variation in mobility can be reduced. Further, if the absolute value of the voltage between the gate and the source of the transistor 101 is large (that is, if the absolute value of the voltage held by the capacitive element 102 is large), more charges are discharged, and if the absolute value of the voltage between the gate and the source of the transistor 101 is small (that is, if the absolute value of the voltage held by the capacitive element 102 is small), the amount of charge discharged becomes small, so that the variation in mobility can be reduced more appropriately. Between the case where the mobility of the transistor 101 is high and the case where it is low, the difference in the graph of the voltage-current characteristics becomes small, and the influence of the variation in mobility can be reduced. Further, if the absolute value of the voltage between the gate and the source of the transistor 101 is large (that is, if the absolute value of the voltage held by the capacitive element 102 is large), more charges are discharged, and if the absolute value of the voltage between the gate and the source of the transistor 101 is small (that is, if the absolute value of the voltage held by the capacitive element 102 is small), the amount of charge discharged becomes small, so that the variation in mobility can be reduced more appropriately. For this reason, the amount of charge discharged becomes small, so that the variation in mobility can be reduced more appropriately.

[0087] Note that the graph in Fig. 3(a) is a graph in the case after the influence of the variation in the threshold voltage has already been reduced. Therefore, as shown in Fig. 3(b), before entering the period (Fig. 1(a)) during which the variation in the mobility of the transistor 101 is corrected, the influence of the variation in the threshold voltage is reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. Note that the graph in Fig. 3(a) is a graph in the case after the influence of the variation in the threshold voltage has already been reduced. Therefore, as shown in Fig. 3(b), before entering the period (Fig. 1(a)) during which the variation in the mobility of the transistor 101 is corrected, the influence of the variation in the threshold voltage is reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. Before entering the period (Fig. 1(a)) during which the variation in the mobility of the transistor 101 is corrected, the influence of the variation in the threshold voltage is reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. Before entering the period (Fig. 1(a)) during which the variation in the mobility of the transistor 101 is corrected, the influence of the variation in the threshold voltage is reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. To reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated in parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and the source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced.

[0088] Note that the current characteristics of the transistor 101 for which the variation can be corrected are the movement ​Not only mobility, but also threshold voltage, parasitic resistance in the source part (drain part), resistance in the LDD region resistance in the region, contact resistance at the contact hole electrically connected to the transistor 101 etc. can be mentioned. Since these current characteristics are also due to the discharge of charges through the transistor 101, similar to the case of mobility, the variation can be reduced.

[0089] Therefore, the charge amount of the capacitor element 102 in the period before discharge, that is, before entering the period (Fig. 1(a)) during which the variations in current characteristics such as the mobility of the transistor 101 are corrected, is larger than the charge amount of the capacitor element 102 at the end of the period (Fig. 1(a)) during which the variations in current characteristics such as the mobility of the transistor 101 are corrected. This is because during the period (Fig. 1(a)) during which the variations in current characteristics such as the mobility of the transistor 101 are corrected, the charge of the capacitor element 102 is discharged, so the charge stored in the capacitor element 102 decreases. That's why.

[0090] Note that if a part of the charge held in the capacitor element 102 is discharged, it is desirable to stop the discharge immediately. If it is completely discharged, that is, if the discharge is allowed until the current stops flowing, almost all the information of the video signal will be lost. Therefore, it is desirable to stop the discharge before it is completely discharged. That is, it is desirable to stop the discharge while the current is flowing through the transistor 101.

[0091] Therefore, one gate selection period (or a value obtained by dividing one horizontal period, one frame period by the number of pixel rows, etc.) and the variations in current characteristics such as the mobility of the transistor 101 are corrected When comparing with the length of the period (Fig. 1(a)), it is desirable that the length of one gate selection period (or one horizontal period, the value obtained by dividing one frame period by the number of pixel rows, etc.) is longer. This is because, if discharging is performed for a longer time than one gate selection period, there is a possibility of excessive discharging. However, it is not limited to this. Or, when comparing with the length of the period during which a video signal is input to the pixel and the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, it is desirable that the length of the period during which a video signal is input to the pixel is longer. This is because, if discharging is performed for a longer time than the period during which a video signal is input to the pixel, there is a possibility of excessive discharging. However, it is not limited to this. When discharging is performed for a longer time than one gate selection period, there is a possibility of excessive discharging. However, it is not limited to this.

[0092] Or, when comparing with the length of the period during which a video signal is input to the pixel and the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, it is desirable that the length of the period during which a video signal is input to the pixel is longer. This is because, if discharging is performed for a longer time than the period during which a video signal is input to the pixel, there is a possibility of excessive discharging. However, it is not limited to this. When comparing with the length of the period during which a video signal is input to the pixel and the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, it is desirable that the length of the period during which a video signal is input to the pixel is longer. This is because, if discharging is performed for a longer time than the period during which a video signal is input to the pixel, there is a possibility of excessive discharging. However, it is not limited to this. When discharging is performed for a longer time than the period during which a video signal is input to the pixel, there is a possibility of excessive discharging. However, it is not limited to this. However, it is not limited to this.

[0093] Or, when comparing with the length of the period during which the threshold voltage of the transistor is acquired and the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, it is desirable that the length of the period during which the threshold voltage of the transistor is acquired is longer. This is because, if discharging is performed for a longer time than the period during which the threshold voltage of the transistor is acquired, there is a possibility of excessive discharging. However, it is not limited to this. When comparing with the length of the period during which the threshold voltage of the transistor is acquired and the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, it is desirable that the length of the period during which the threshold voltage of the transistor is acquired is longer. This is because, if discharging is performed for a longer time than the period during which the threshold voltage of the transistor is acquired, there is a possibility of excessive discharging. However, it is not limited to this. When discharging is performed for a longer time than the period during which the threshold voltage of the transistor is acquired, there is a possibility of excessive discharging. When discharging is performed for a longer time than the period during which the threshold voltage of the transistor is acquired, there is a possibility of excessive discharging. However, it is not limited to this.

[0094] In addition, in the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, the length of the period for discharging the charge held in capacitor element 102 is desirably determined according to, for example, the variation amount of the mobility of transistor 101, the size of capacitor element 102, the W / L of transistor 101, etc. In addition, in the period (Fig. 1(a)) during which variations in current characteristics such as the mobility of transistor 101 are corrected, the length of the period for discharging the charge held in capacitor element 102 is desirably determined according to, for example, the variation amount of the mobility of transistor 101, the size of capacitor element 102, the W / L of transistor 101, etc. For example, it is desirably determined according to, for example, the variation amount of the mobility of transistor 101, the size of capacitor element 102, the W / L of transistor 101, etc. For example, it is desirably determined according to, for example, the variation amount of the mobility of transistor 101, the size of capacitor element 102, the W / L of transistor 101, etc.

[0095] For example, consider the case where there are multiple circuits shown in FIGS. 1 and 2. As an example, it has a first pixel for displaying a first color and a second pixel for displaying a second color, and each pixel is regarded as a transistor corresponding to transistor 101, with the first pixel having transistor 101A and the second pixel having transistor 101B. Similarly, as a capacitor element corresponding to capacitor element 102, the first pixel has capacitor element 102A and the second pixel has capacitor element 102B. And, assuming that the W / L of transistor 101A is larger than the W / L of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. This is because transistor 101A discharges more charge, so the voltage of capacitor element 102A will also change more significantly. Therefore, in order to adjust this, it is desirable that the capacitance value of capacitor element 102A is large. Or, when the channel width W of transistor 101A is larger than the channel width W of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. Or, when the channel length L of transistor 101A is smaller than the channel length L of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B.

[0096] Furthermore, in order to control the amount of charge discharged from the charge held in capacitor element 102, it is possible to additionally arrange a capacitor element. For example, FIGS. 4(a) and 4(b) show an example of the case where a capacitor element is added with respect to FIGS. 1(a) and 1(b). Note that FIGS. 4(a) to 4(f)

[0097] ​​​​​​​​​​​​​ The circuit configuration to be described is an example for realizing the circuit configurations shown in FIGS. 1(a) and 1(b). It is shown as such. In practice, in addition to the plurality of switches and capacitive elements shown in FIGS. 4(a) to 4(f), the on or off of the plurality of switches provided between wirings is controlled to realize the connection relationship of the circuit configuration.

[0098] In FIGS. 4(a) and 4(b), the first terminal (or the first electrode) of the capacitive element 402A is in a conductive state with the drain (or source, second terminal, second electrode) of the transistor 101, and the second terminal (or the second electrode) of the capacitive element 402A is in a conductive state with the wiring 103. In FIG. 4(b), it is desirable that the conductive states of the respective terminals of the capacitive element 402A are the same as those in FIG. 4(a), but it is not limited thereto. A part may be in a non-conductive state. .

[0099] Similarly, FIGS. 4(c) and 4(d) show another example when a capacitive element is added to FIGS. 1(a) and 1(b). The first terminal (or the first electrode) of the capacitive element 402B is in a conductive state with the drain (or source, second terminal, second electrode) of the transistor 101, and the second terminal (or the second electrode) of the capacitive element 402B is in a conductive state with the wiring 106. In FIG. 4(d), it is desirable that the conductive states of the respective terminals of the capacitive element 402B are the same as those in FIG. 4(c), but it is not limited thereto. A part may be in a non-conductive state.

[0100] For example, consider the case where there are a plurality of circuits shown in FIG. 4 etc. As an example, it has a first pixel for displaying a first color and a second pixel for displaying a second color, and each ​​​​​​​The pixel corresponding to the transistor 101 has a transistor 101A for the first pixel and a transistor 101B for the second pixel. Similarly, as the capacitive element corresponding to the capacitive element 102, the first pixel has a capacitive element 102A and the second pixel has a capacitive element 102B. Further, as the capacitive element corresponding to at least one of the capacitive elements 402A to 402C, the first pixel has a capacitive element 402AA and the second pixel has a capacitive element 402AB. Suppose. And, when the W / L of the transistor 101A is larger than the W / L of the transistor 101B, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB. Because the transistor 101A discharges more charges, it is for adjusting the potential. Or, when the channel width W of the transistor 101A is larger than the channel width W of the transistor 101B, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB. Or, the channel length of the transistor 101A is longer than the channel length of the transistor 101B it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB.

[0101] And, when the W / L of the transistor 101A is larger than the W / L of the transistor 101B, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. In this case, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB. This is because the transistor 101A discharges more charges, so it is for adjusting the potential. Or, when the channel width W of the transistor 101A is larger than the channel width W of the transistor 101B, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB. Or, when the channel length of the transistor 101A is longer than the channel length of the transistor 101B, it is desirable that the capacitance value of the capacitive element 102A is larger than the capacitance value of the capacitive element 102B. Or, it is desirable that the capacitance value of the capacitive element 402AA is larger than the capacitance value of the capacitive element 402AB. Or, it is desirable that the total capacitance value of the capacitive element 102A and the capacitive element 402AA is larger than the total capacitance value of the capacitive element 102B and the capacitive element 402AB. Or, when the channel length of the transistor 101A is longer than the channel length of the transistor 101B, When the loop length L is smaller than the channel length L of the transistor 101B, it is desirable that the capacitance value of the capacitor element 102A is larger than the capacitance value of the capacitor element 102B. Or, it is desirable that the capacitance value of the capacitor element 402AA is larger than the capacitance value of the capacitor element 402AB . Or, it is desirable that the total capacitance value of the capacitor element 102A and the capacitor element 402AA is larger than the total capacitance value of the capacitor element 1 02B and the capacitor element 402AB.

[0102] Note that the capacitance values of the capacitor elements 402AA and 402AB are different, and it is also possible that the capacitance values of the capacitor elements 10 2A and 102B are approximately equal. That is, it is also possible to perform the adjustment of the capacitance value using the capacitor elements 402AA and 402AB instead of the capacitor elements 102A and 102B. When the sizes of the capacitor elements 102A and 102B are different, there may be an influence on others, such as a difference in the magnitude of the video signal . Therefore, it is desirable to adjust the capacitance value using the capacitor elements 402AA and 402AB. . When the sizes of the capacitor elements 102A and 102B are different, there may be a difference in the magnitude of the video signal , and there may be a large influence on others. Therefore, it is desirable to adjust the capacitance value using the capacitor elements 402AA and 402AB.

[0103] Note that the connection structure of the circuit is not limited to FIGS. 1(a) and 1(b). For example, in FIGS. 1(a) and 1(b), the second terminal (or the second electrode) of the capacitor element 102 is in a conductive state with the wiring 103, but it is not limited to this. As long as it is in a conductive state with a wiring having a function of supplying a constant potential for at least a predetermined period. For example, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 107. Similarly, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 10 . For example, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 107. Similarly, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 10 . An example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 107 is shown in FIGS. 1(c) and 1(d). Similarly, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 10 . Similarly, FIGS. 1(c) and 1(d) show an example in which the second terminal (or the second electrode) of the capacitor element 102 is connected to the wiring 10 Examples of the case where it is connected to 6 are shown in FIGS. 1(e) and 1(f).

[0104] In addition, in FIGS. 1(c) to 1(f) as well, similar to FIGS. 4(a) to 4(d), additional capacitive elements can be arranged. As an example, for FIGS. 1(c) and 1(d), the case where an additional capacitive element 402C is arranged is shown in FIGS. 4(e) and 4(f).

[0105] In addition, in FIGS. 1(c) to 1(f) as well, similar to FIGS. 2(a) to 2(f), switches can be arranged.

[0106] In addition, in FIGS. 1(a) to 1(f), FIGS. 2(a) to 2(f), FIGS. 4(a) to 4(f ), etc., although the capacitive element 102 has been described by individual notation, it is not limited to this. A plurality of capacitive elements can be arranged by series connection or parallel connection. For example, in FIGS. 1(a) and 1(b), examples of the case where two capacitive elements 102A and 102B are connected in series are shown in FIGS. 1(g) and 1(h).

[0107] In addition, in FIGS. 1, 3, 4, etc., although the case where the transistor 101 is of P-channel type has been described, it is not limited to this. As shown in FIG. 5, an N-channel type can be used . As an example, for FIGS. 1(a) to 1(d), the case where an N-channel type is used is shown in FIGS. 5(a) to 5(d). In other cases as well, it can be done similarly. The circuit configuration described in FIGS. 5(a) to 5(d) is shown as an example of realizing the circuit configuration shown in FIGS. 1(a) and 1(b) above. In actuality, in addition to the plurality of switches and capacitive elements shown in FIGS. 5(a) to 5(d), a plurality of switches provided between wirings are also present. ​The connection relationship of the circuit configuration is realized by controlling the on / off of the switches.

[0108] The transistor 101 controls the amount of current flowing through the display element 105. 105, but is not limited thereto.

[0109] In addition, the wiring 103 often has a capability of supplying power to the display element 105. Alternatively, the wiring 103 may have a capability of supplying a current to the transistor 101. This is often the case, but is not limited to this.

[0110] Note that the wiring 107 often has a capability of supplying a voltage to the capacitor 102. Alternatively, in order to make the gate potential of the transistor 101 less likely to fluctuate due to noise, etc. In many cases, the function of the ion exchange is, but not limited to, that of the ion exchange.

[0111] Note that the voltage according to the threshold voltage of the transistor 101 is A voltage as large as the low-value voltage or a voltage close to the threshold voltage of transistor 101. For example, when the threshold voltage of the transistor 101 is large, , the voltage according to the threshold voltage is also large, and when the threshold voltage of the transistor 101 is small, In this way, the magnitude is determined according to the threshold voltage. The voltage that is waiting is called the voltage according to the threshold voltage. Voltages that are slightly different due to the effects of the above are also called voltages according to the threshold voltage. It is possible.

[0112] The display element 105 has a function of changing the luminance, brightness, reflectance, transmittance, etc. refers to the element it has. Therefore, as an example of the display element 105, a liquid crystal element, a light emitting element, an organic EL element, an electrophoretic element, etc. can be used.

[0113] In addition, in this embodiment, the contents described in each figure can be freely combined, replaced, etc. as appropriate with respect to the contents described in another embodiment.

[0114] (Embodiment 2) In this embodiment, specific examples of the circuit and the driving method described in Embodiment 1 are shown.

[0115] FIG. 6(a) shows specific examples of FIGS. 1(a), 1(b), 2(a), and 2(d). The first terminal of the switch 601 is connected to the wiring 104, and the second terminal is connected to the source (or drain) of the transistor 101. The first terminal of the switch 203 is connected to the wiring 103, and the second terminal is connected to the source (or drain) of the transistor 101. The first terminal of the capacitor element 102 is connected to the gate of the transistor 101, and the second terminal is connected to the wiring 103. The first terminal of the switch 201 is connected to the gate of the transistor 101, and the second terminal is connected to the drain ( or source) of the transistor 101. The first terminal of the switch 202 is connected to the drain ( or source) of the transistor 101, and the second terminal is connected to the first terminal of the display element 105. The second terminal of the display element 105 is connected to the wiring 106.

[0116] In addition, the potential of the drain (or source), or gate of the transistor 101 is controlled. ​​​Therefore, it is desirable to add a switch. However, it is not limited to this. The switch added examples are shown in FIGS. 6(b) and 6(c). In FIG. 6(b), a switch 602 is added and its first terminal is connected to the gate of the transistor 101, and the second terminal is connected to the wiring 60 6. In FIG. 6(c), a switch 603 is added, and its first terminal is connected to the drain (or source) of the transistor 101, and the second terminal is connected to the wiring 606 .

[0117] Note that the wiring 606 can be shared with another wiring to reduce the number of wirings. For example , an example of the case where the wiring 106 and the wiring 606 are shared and only the wiring 106 is used is shown in FIG. 6(d ). The first terminal of the switch 602 is connected to the gate of the transistor 101, and the second terminal is connected to the wiring 106. In this way, the connection destination of the second terminal of the switch 602 is not limited and can be connected to various wirings. And by sharing with another wiring, the number of wirings can be reduced.

[0118] Note that the connection configuration of the circuit is not limited to this. As long as it is arranged so that the desired operation can be performed, switches, transistors, etc. can be arranged in various places to realize circuits of various configurations.

[0119] Thus, the examples of the configuration described in Embodiment 1 can take various configurations . Further, although specific examples of FIGS. 1(a), 1(b), 2(a), and 2(d) are shown , in FIGS. 1, 2, 4, and 5 as well, specific examples can be similarly configured.

[0120] ​​​As an example, an example for FIGS. 1(c) and 1(d) is shown in FIG. 6(e). Note that in FIG. 6(e) the second terminal of the switch 603 and the second terminal (or the second electrode ) of the capacitor element 102 are both connected to the wiring 107 and share the wiring. However, it is not limited to this.

[0121] Furthermore, examples for FIGS. 4(c) and 4(d) are shown in FIG. 6(f). The first terminal of the capacitor element 402B is connected to the drain (or source) of the transistor 101, and the second terminal is connected to the wiring 106.

[0122] As described above, FIG. 6 shows a part of an example of the configuration described in the first embodiment, but other examples can be configured in the same manner.

[0123] Next, an operation method will be described. Here, it will be described using the circuit of FIG. 6(b), but the same operation method can be used for other circuits.

[0124] First, as shown in FIG. 7(a), initialization is performed. This is an operation of setting the potential of the gate, or the drain (or source) of the transistor 101 to a predetermined potential. By this the transistor 101 can be put into a state where it is turned on. Alternatively, a predetermined voltage is supplied to the capacitor element 102. Therefore, the capacitor element 102 will hold electric charge . The switch 602 is in a conductive state and is on. It is desirable that the switches 601, S witch 201, switch 202, and switch 203 are in a non-conductive state and are off . However, it is not limited to this. However, power is supplied to the display element 105 Since it is desirable for there to be no current, it is desirable to be in a state where this can be achieved. Therefore, at least one of the switches 202 and 203 It is preferably in a non-conducting state and turned off.

[0125] Note that the potential of the wiring 606 is desirably lower than that of the wiring 104. It is desirable that the position of the wiring 106 is approximately the same as that of the wiring 106. Here, approximately means that the position is equal within the margin of error. This refers to a state where the electrical characteristics are equal within a range of ±10%. In addition, these potentials are set when the transistor 101 is a P-channel type. Therefore, when the polarity of the transistor 101 is an N-channel type, the potential Preferably the relationship is reversed.

[0126] Next, as shown in FIG. 7(b), a video signal is input. The threshold voltage of the transistor 101 is also acquired. Switch 202, switch 203, and switch 1 are in a conductive state and are turned on. 602 is in a non-conducting state and is preferably turned off. At this time, the capacitive element 102 is supplied with a video signal during the period shown in FIG. Since there is an accumulated charge, the charge is discharged. Therefore, the transistor 101 The potential of the gate of the transistor 101 is determined by a video signal supplied from a wiring 104. In other words, the potential supplied from the wiring 104 approaches the potential obtained by adding the low-value voltage (negative value) and the low-value voltage (negative value). The potential of the image signal is lower than the potential of the image signal by the absolute value of the threshold voltage of the transistor 101. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge. By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated. Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge. By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated. Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge.

[0127] By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated. Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates.

[0128] Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge. By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated. Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge. By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated. Incidentally, when discharging the charge of the capacitive element 102, even if there is a difference in that period, there is no major problem. Because after a certain period of time, it will be almost completely discharged, so even if the length of the period is different, the impact on the operation is small. Therefore, this operation can be driven using dot sequential instead of line sequential. Therefore, the configuration of the drive circuit can be realized with a simple configuration. Thus, when a circuit as shown in FIG. 6 is used as one pixel, for the pixel portion in which the pixels are arranged in a matrix and the drive circuit portion that supplies signals to the pixel portion, both can be configured using the same type of transistor or formed on the same substrate. However, it is not limited to this, and line sequential driving can also be used, or the pixel portion and the drive circuit portion can be formed on separate substrates. Then it proceeds. At this time, the voltage between the gate and the source of the transistor 101 approaches the threshold voltage of the transistor 101. Through these operations, the input of the video signal and the acquisition of the threshold voltage can be performed in parallel. When discharging the charge of the capacitive element 102, it is possible to discharge almost completely. In that case, since almost no current flows through the transistor 101, the voltage between the gate and the source of the transistor 101 is very close to the threshold voltage of the transistor 101. However, it is also possible to stop the discharge before complete discharge. By such operations, a voltage obtained by adding the voltage corresponding to the threshold voltage and the video signal voltage is supplied to the capacitive element 102, and the charge corresponding to that voltage is accumulated.

[0129] Next, as shown in FIG. 7(c), variations in current characteristics such as the mobility of transistor 101 are corrected. This corresponds to periods such as those in FIGS. 1(a) and 1(c). And switches 201 and switch 203 are in the conducting state and are on. It is desirable that switches 601, swi tch 202, and switch 602 are in the non-conducting state and are off. By setting it in such a state, the charge accumulated in capacitor element 102 is discharged through transistor 101. In this way, by slightly discharging through transistor 101 it is possible to reduce the influence of variations in the current of transistor 101 .

[0130] Next, as shown in FIG. 7(d), a current is supplied to display element 105 through transistor 101 . This corresponds to periods such as those in FIGS. 1(b) and 1(d). And switch 2 02 and switch 203 are in the conducting state and are on. It is desirable that switches 201, swi tch 601, and switch 602 are in the non-conducting state and are off. At this time, the voltage between the gate and source of transistor 101 is the voltage obtained by subtracting a voltage corresponding to the current characteristics of transistor 101 from the sum of the threshold voltage and the video signal voltage. Therefore, the influence of variations in the current characteristics of transistor 101 can be reduced, and an appropriate amount of current can be supplied to display element 105 .

[0131] In the case of the circuit configuration in FIG. 6(a), during the initialization period shown in FIG. 7(a), as shown in FIG. 8 (a), through display element 105, the gate or drain of transistor 101 It is possible to control the potential of the in (or source). And, it is desirable that switches 201 and switch 202 are in a conducting state and are turned on. For switches 601, switch 203, it is desirable that they are in a non-conducting state and are turned off, but it is not limited to this. For the subsequent figures from Figure 7(b) onwards, the same operation can be performed.

[0132] Or, in the case of the circuit configuration in Figure 6(c), during the initialization period shown in Figure 7(a), as shown in Figure 8(b), it is possible to control the potential of the gate or drain (or source) of transistor 101 via switch 603. And, it is desirable that switches 201 and switch 603 are in a conducting state and are turned on. For switches 601 switch 202, and switch 203, it is desirable that they are in a non-conducting state and are turned off, but it is not limited to this. For the subsequent figures from Figure 7(b) onwards, the same operation can be performed. That's fine.

[0133] Note that in Figure 7, at the time of switching to each operation, it is also possible that another operation or another period is provided during that operation. For example, a state as shown in Figure 8(c) can be provided between Figure 7(a) and Figure 7(b). Since there is no problem even if such a period is provided, there is no issue.

[0134] Note that in this embodiment, the content described in each figure can be freely combined, replaced, etc. as appropriate with the content described in another embodiment.

[0135] (Embodiment 3) In this embodiment, another specific example of the circuit and driving method described in Embodiment 1 is shown. ​

[0136] Fig. 9(a) shows specific examples of Fig. 1(a), Fig. 1(b), and Fig. 2(a). Switch 9 The first terminal of switch 01 is connected to wiring 104, and the second terminal is connected to the gate of transistor 101 The first terminal of capacitor element 102 is connected to the gate of transistor 101, and the second terminal is connected to wiring 103 The first terminal of switch 201 is connected to the gate of transistor 101, and the second terminal is connected to the drain (or source) of transistor 101 The first terminal of switch 202 is connected to the drain (or source) of transistor 101, and the second terminal is connected to the first terminal of display element 105 (or source) of transistor 101. The second terminal of display element 105 is connected to wiring 106. The source (or drain) of transistor 101 is connected to wiring 103 Note that the connection configuration of the circuit is not limited to this. As long as it is arranged so that a desired operation can be performed, switches, transistors, etc. can be arranged in various places to realize circuits of various configurations For example, as shown in Fig. 9(e), it is possible to change the connection of switch 901 In Fig. 9(e), the first terminal of switch 901 is connected to wiring 104, and the second terminal is connected to the drain (or source) of transistor 101

[0137] Thus, the examples of the configuration described in Embodiment 1 can take various configurations. Furthermore, specific examples of Fig. 1(a), Fig. 1(b), and Fig. 2(a) are shown, but Figs. 1 and 2

[0138]

[0139] ​​​​​​​, similarly, specific examples can also be configured in FIGS. 4 and 5.

[0140] Next, the operation method will be described.

[0141] First, as shown in FIG. 9(b), an image signal is input. Switch 901 is in a conducting state and is on. Switches 201 and 202 are preferably in a non-conducting state and off. Then, the image signal is supplied from wiring 104. At this time, charges are accumulated in the capacitor element 102.

[0142] Next, as shown in FIG. 9(c), variations in current characteristics such as the mobility of transistor 101 are corrected. This corresponds to periods such as those in FIGS. 1(a) and 1(c). And switch 201 is in a conducting state and is on. Switches 901 and 202 are preferably in a non-conducting state and off. By setting it in such a state, the charges accumulated in the capacitor element 102 are discharged through transistor 101. In this way, by slightly discharging through transistor 101, the influence of variations in the current of transistor 101 can be reduced.

[0143] Next, as shown in FIG. 9(d), a current is supplied to the display element 105 through transistor 101. This corresponds to periods such as those in FIGS. 1(b) and 1(d). And switch 2 02 is in a conducting state and is on. Switches 201 and 901 are preferably in a non-conducting state and off. At this time, the voltage between the gate and source of transistor 101 is the image signal voltage minus a voltage corresponding to the current characteristics of transistor 101. ​It has become the induced voltage. Therefore, the influence of the variation in the current characteristics of the transistor 101 can be reduced, and an appropriate amount of current can be supplied to the display element 105.

[0144] In the case of the circuit configuration of FIG. 9(e), during the period of FIG. 9(b), it is desirable that the switch 201 and the switch 901 be in a conducting state and be turned on. For the period after FIG. 9(c), the same operation may be performed.

[0145] In FIG. 9, at the time of switching to each operation, it is also possible that another operation or another period is provided during that operation.

[0146] In the present embodiment, the contents described in each figure can be freely combined, replaced, etc. as appropriate with respect to the contents described in another embodiment.

[0147] (Embodiment 4) In the present embodiment, specific examples are shown for the circuits described in Embodiments 1 to 3.

[0148] As an example, for the case where the circuit shown in FIG. 6(b) constitutes one pixel and the pixels are arranged in a matrix, FIG. 10 shows it. In FIG. 10, the switch is realized using a P-channel type transistor. However, it is not limited to this, and it is also possible to use transistors of another polarity, use transistors of both polarities, use diodes or transistors connected in diode connection, etc.

[0149] The circuit shown in FIG. 6(b) constitutes a pixel 1000M which is one pixel. Pixel 10 ​​​​​​​​​​​Pixels having the same configuration as 00M are used as pixel 1000N, pixel 1000P, and pixel 1000Q. They are arranged in a matrix. In each pixel, depending on the vertical and horizontal arrangement, they may be connected to the same wiring.

[0150] Next, the correspondence between each element in Fig. 6(b) and each element in pixel 1000M is shown below. Wiring 104 corresponds to wiring 104M, wiring 103 corresponds to wiring 103M, switch 601 corresponds to transistor 601M, switch 203 corresponds to transistor 203M, transistor 101 corresponds to transistor 101M, capacitive element 102 corresponds to capacitive element 102M, switch 201 corresponds to transistor 201M, switch 2 02 corresponds to transistor 202M, switch 602 corresponds to transistor 602M, display element 105 corresponds to light-emitting element 105M, wiring 106 corresponds to wiring 106M, and wiring 606 corresponds to wiring 606M.

[0151] The gate of transistor 601M is connected to wiring 1002M. The gate of transistor 20 3M is connected to wiring 1001M. The gate of transistor 202M is connected to wiring 1003M. The gate of transistor 201M is connected to wiring 1004M and the gate of transistor 602M is connected to wiring 1005M.

[0152] Note that the wiring connected to the gate of each transistor can be connected to the wiring of another pixel or another wiring of the same pixel. For example, the gate of transistor 602M can be connected to wiring 1002N, which is the wiring of pixel 1000N. ​​In this case, wiring 1005M and wiring 1002N are shared, and wiring 1005M can be deleted. It can be done.

[0153] Note that as the switch 602, a transistor 602M having three or four terminals is used. Although the case where it is used is shown, a two-terminal diode or a transistor connected in diode configuration can be used. When using them, the wiring 1005M that controlled the on or off of the transistor 602M can be deleted. It can be deleted.

[0154] Note that the wiring 606M can be continued with the wiring 606P, the wiring 606N, the wiring 606Q, and the wiring 106M. Or, the wiring 606M can be connected to the wiring that other pixels have. It is possible. It is possible.

[0155] Similar to FIG. 10, various circuits can be configured.

[0156] Note that in this embodiment, the content described in each figure can be freely combined or replaced as appropriate with respect to the content described in another embodiment. It can be freely combined or replaced as appropriate.

[0157] (Embodiment 5) In this embodiment, the structure and manufacturing method of a transistor will be described.

[0158] FIGS. 11(A) to (G) are diagrams showing an example of the structure and manufacturing method of a transistor. FIG. 1 11(A) is a diagram showing an example of the structure of a transistor. FIGS. 11(B) to (G) are diagrams showing an example of the manufacturing method of a transistor. It is a diagram showing an example of the manufacturing method of a transistor.

[0159] Note that the structure and manufacturing method of the transistor are not limited to those shown in FIGS. 11(A) to (G). Without this, various structures and manufacturing methods can be used.

[0160] First, referring to Fig. 11(A), an example of the structure of a transistor will be described. Fig. 11(A) is a cross-sectional view of a transistor having a plurality of different structures. Here, in Fig. 11(A) a plurality of transistors having different structures are shown juxtaposed, but this is an expression for explaining the structure of the transistor, and it is not necessary for the transistors to be actually juxtaposed as in Fig. 11(A), and they can be made separately as needed. is an expression for explaining the structure of the transistor, and it is not necessary for the transistors to be actually juxtaposed as in Fig. 11(A), and they can be made separately as needed. It is not necessary for the transistors to be actually juxtaposed as in Fig. 11(A), and they can be made separately as needed.

[0161] Next, the characteristics of each layer constituting the transistor will be described.

[0162] The substrate 7011 can be made of a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, or a metal substrate including stainless steel. In addition, it is also possible to use a substrate made of a plastic such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), a flexible synthetic resin such as polyethersulfone (PES) or acrylic. By using a substrate having flexibility, it becomes possible to manufacture a semiconductor device that can be bent. If a substrate having flexibility is used, there are no major restrictions on the area and shape of the substrate. Therefore, as the substrate 7011, for example, if a rectangular one with a side length of 1 meter or more is used, the productivity can be significantly improved. Such an advantage is a major advantage compared to the case of using a circular silicon substrate. improved. Such an advantage is a major advantage compared to the case of using a circular silicon substrate. improved. Such an advantage is a major advantage compared to the case of using a circular silicon substrate. This is a major advantage.

[0163] The insulating film 7012 functions as an underlayer film. Alkali metals such as Na from the substrate 7011 or The purpose of the insulation is to prevent alkaline earth metals from adversely affecting the characteristics of semiconductor elements. The film 7012 is made of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (S iO x N y )(x>y), silicon oxynitride (SiN x O y ) (x>y) etc. The insulating film may have a single layer structure or a laminate structure of these insulating films. When the film 7012 is provided in a two-layer structure, a silicon nitride oxide film is provided as the first insulating film, and a silicon nitride oxide film is provided as the second insulating film. As another example, the insulating film 7012 may be a three-layer film. In the case of a structure, a silicon oxynitride film is provided as the first insulating film, and a silicon nitride film is provided as the second insulating film. It is preferable to provide a silicon nitride oxide film and then provide a silicon oxynitride film as a third insulating film.

[0164] The semiconductor layer 7013, the semiconductor layer 7014, and the semiconductor layer 7015 are made of amorphous semiconductor. Conductor, microcrystalline semiconductor, or semi-amorphous semiconductor (SAS) Alternatively, a polycrystalline semiconductor layer may be used. It has an intermediate structure between crystal structures (including single crystals and polycrystals) and is stable in terms of free energy. A semiconductor having three states, which has short-range order and contains crystalline regions with lattice distortion. At least in some areas of the film, crystalline regions of 0.5 to 20 nm were observed. When the main component is silicon, the Raman spectrum has a peak at 520 cm -1 Lower wave number than X-ray diffraction shows that the (111) and (22) structures are derived from the silicon crystal lattice. 0) diffraction peak is observed. It contains at least 1 atomic % or more of hydrogen or halogen. The SAS is a source gas formed by glow discharge decomposition (plasma CVD). As the source gas, SiH4, and others such as Si2H6, SiH2Cl2, SiHCl3, SiCl4, SiF4 can also be used . Alternatively, GeF4 can be mixed. This source gas can be diluted with H2, or diluted with H2 and one or more noble gas elements selected from He, Ar, Kr, and Ne . The dilution ratio is in the range of 2 to 1000 times, the pressure is in the range of approximately 0.1 Pa to 133 Pa, the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz, and the substrate heating temperature can be 300 °C or lower. As impurity elements in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon should desirably be 1×10 20 cm -1 or less, and in particular, the oxygen concentration should be 5×10 1 9 / cm 3 or less, preferably 1×10 19 / cm 3 or less. Here, a material mainly composed of silicon (Si) (such as Si Ge x etc.) is used to form an amorphous semiconductor layer by sputtering, 1-x LPCVD method, plasma CVD method, etc., and the amorphous semiconductor layer is crystallized by a crystallization method such as a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization.

[0165] The insulating film 7016 is silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (Si O x N y )(x > y), silicon nitride oxide (SiN xO y (x>y) such as oxygen or nitrogen having It can be provided in a single-layer structure of an insulating film or a laminated structure thereof.

[0166] The gate electrode 7017 can be a single-layer conductive film or a laminated structure of two or three conductive films. As the material of the gate electrode 7017, a conductive film can be used. For example, Tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon (Si), etc. single-element films, or nitride films of the above elements (typically tantalum nitride film, tungsten nitride film, titanium nitride film), or alloy films combining the above elements (typically Mo-W alloy, Mo-Ta alloy), or silicide films of the above elements (typically tungsten silicide film, titanium silicide film), etc. can be used. Note that the above single-element films, nitride films, alloy films, silicide films, etc. can be used alone in a single layer or can be used in a laminated manner.

[0167] The insulating film 7018 is made of silicon oxide (SiO x ) , silicon nitride (SiN x ), silicon oxynitride (SiO x N y )(x>y), silicon nitride oxide (S iN x O y )(x>y) such as an insulating film having oxygen or nitrogen or a film containing carbon such as DLC (diamond-like carbon) in a single-layer structure or a laminated structure thereof.

[0168] The insulating film 7019 is a siloxane resin or silicon oxide (SiO x ), silicon nitride (Si N x) Silicon oxynitride (SiO x N y )(x > y), silicon nitride oxide (SiN x O y )(x > y), and other insulating films containing oxygen or nitrogen such as DLC (diamond-like carbon), or films containing carbon such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc., can be provided in a single-layer or laminated structure made of organic materials. Note that the siloxane resin corresponds to a resin containing Si-O-Si bonds. Silo xane has a skeletal structure composed of bonds between silicon (Si) and oxygen (O). As substituents at least an organic group containing hydrogen (e.g., an alkyl group, an aromatic hydrocarbon) is used . A fluoro group can also be used as a substituent. Alternatively, as substituents, at least an organic group containing hydrogen and a fluoro group may be used. Note that it is also possible to directly provide the insulating film 7019 so as to cover the gate electrode 7017 without providing the insulating film 7018 . The conductive film 7023 can be made of a single-element film of any of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, Mn, etc., or a nitride film of the above elements, or an alloy film combining the above elements, or a silicide film of the above elements, etc. For example, as an alloy containing a plurality of the above elements, an Al alloy containing C and Ti, an Al alloy containing Ni, an Al alloy containing C and Ni, an Al alloy containing C and Mn, etc. can be used. For example, when provided in a laminated structure, it can be structured such that Al is sandwiched between Mo or Ti, etc

[0169] . By doing so, the resistance of Al to heat and chemical reactions can be improved . . . . . .

[0170] Next, referring to the cross-sectional view of transistors having a plurality of different structures shown in Fig. 11(A), the features of each structure will be described.

[0171] Transistor 7001 is a single-drain transistor and can be manufactured by a simple method. Therefore, it has the advantages of low manufacturing cost and high production yield. The taper angle is 45° or more and less than 95°, more preferably 60° or more and less than 95°. Or, the taper angle can also be less than 45°. Here, the semiconductor layers 7013 and 7015 have different impurity concentrations respectively. The semiconductor layer 7013 is a channel region, and the semiconductor layer 7015 is used as a source region and a drain region. Thus, by controlling the amount of impurities, the resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 7023 can be made closer to an ohmic connection. As a method of forming semiconductor layers with different amounts of impurities, a method of doping impurities into the semiconductor layer using the gate electrode 7017 as a mask can be used.

[0172] Transistor 7002 is a transistor having a taper angle of a certain degree or more on the gate electrode 7017. Since it can be manufactured by a simple method, it has the advantages of low manufacturing cost and high production yield. Here, the semiconductor layers 7013, 7014, and 7015 have different impurity concentrations respectively. The semiconductor layer 7013 is a channel region, and the semiconductor layer 7014 is a lightly doped drain (LDD) region. The semiconductor layer 7015 is used as a source region and a drain region. Thus, by controlling the amount of impurities, the resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 7023 ​ It can approach ohmic connection. Since it has an LDD region, inside the transistor it is difficult for a high electric field to be applied, and degradation of the element due to hot carriers can be suppressed. Incidentally , as a method of fabricating semiconductor layers with different amounts of impurities, a method of doping impurities into the semiconductor layer using the gate electrode 7017 as a mask can be used. In the transistor 70 02, since the gate electrode 7017 has a taper angle of a certain degree or more, a gradient can be given to the concentration of impurities doped into the semiconductor layer through the gate electrode 7017 , and an LDD region can be formed simply. The taper angle is 45° or more and less than 95° , more preferably 60° or more and less than 95°. Or, it is also possible to make the taper angle less than 45° .

[0173] The transistor 7003 is a transistor in which the gate electrode 7017 is composed of at least two layers, and the lower gate electrode has a shape longer than that of the upper gate electrode. In this specification , the shapes of the upper gate electrode and the lower gate electrode are referred to as a hat shape. Since the shape of the gate electrode 7017 is a hat shape, an LDD region can be formed without adding a photomask . Incidentally, a structure in which the LDD region overlaps with the gate electrode 7017 like the transistor 7003 is particularly referred to as a GOLD structure (Gate Overlapped LDD) . As a method of making the shape of the gate electrode 7017 a hat shape, the following method may be used . .

[0174] First, when patterning the gate electrode 7017, by dry etching, the lower gate electrode and the upper gate electrode are etched to have a shape with an inclination (taper) on the side . Subsequently, anisotropic etching is performed to make the inclination of the upper gate electrode closer to vertical. As a result, a gate electrode with a hat-shaped cross-sectional shape is formed. Thereafter, the semiconductor layer 7013 used as the channel region, the semiconductor layer 7014 used as the LDD region, and the semiconductor layer 7015 used as the source and drain regions are formed by doping impurity elements twice.

[0175] Note that the LDD region overlapping with the gate electrode 7017 is referred to as the Lov region, and the LDD region not overlapping with the gate electrode 7017 is referred to as the Loff region. Here, the Loff region has a high effect of suppressing the off-current value, but has a low effect of relaxing the electric field near the drain and preventing the degradation of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field near the drain and is effective in preventing the degradation of the on-current value, but has a low effect of suppressing the off-current value. Therefore, it is preferable to fabricate transistors with a structure according to the required characteristics for each of various circuits. For example, when the semiconductor device is used as a display device, it is preferable to use a transistor having an Loff region in order to suppress the off-current value. On the other hand, for the transistors in the peripheral circuits, it is preferable to use a transistor having a Lov region in order to relax the electric field near the drain and prevent the degradation of the on-current value.

[0176] The transistor 7004 is a transistor having a sidewall 7021 in contact with the side surface of the gate electrode 7017. By having the sidewall 7021, the region overlapping with the sidewall 7021 can be used as the LDD region.

[0177] ​​​​​​​​​​​​​Transistor 7005 is a transistor in which an LDD (Loff) region is formed by doping a semiconductor layer using mask 7022. By doing so, an LDD region can be surely formed, and the off-current value of the transistor can be reduced. , and an LDD region can be surely formed, and the off-current value of the transistor can be reduced. Transistor 7006 is a transistor in which an LDD (Lov) region is formed by doping a semiconductor layer using a mask. By doing so, an LDD region can be surely formed, the electric field near the drain of the transistor can be relaxed, and the degradation of the on-current value

[0178] can be reduced. (Lov) region is formed. By doing so, an LDD region can be surely formed, the electric field near the drain of the transistor can be relaxed, and the degradation of the on-current value can be reduced. Next, an example of a method for manufacturing a transistor is shown in FIGS. 11(B) to (G).

[0179] Note that the structure and manufacturing method of the transistor are not limited to those shown in FIGS. 11(A) to (G), and various structures and manufacturing methods can be used.

[0180] In the present embodiment, oxidation or nitridation of a semiconductor layer or an insulating film can be performed by performing oxidation or nitridation using plasma treatment on the surface of the substrate 7011, on the surface of the insulating film 7012, on the surface of the semiconductor layer 7 013, on the surface of the semiconductor layer 7014, on the surface of the semiconductor layer 7015, on the surface of the insulating film 701

[0181] 6, on the surface of the insulating film 7018, or on the surface of the insulating film 7019. Thus, by oxidizing or nitriding a semiconductor layer or an insulating film using plasma treatment, the surface of the semiconductor layer or the insulating film is modified, and a more dense insulating film can be formed as compared with an insulating film formed by a CVD method or a sputtering method. Therefore, defects such as pinholes can be suppressed, and the characteristics of the semiconductor device can be improved. Note that plasma treatment is performed By oxidizing or nitriding a semiconductor layer or an insulating film using plasma treatment, the surface of the semiconductor layer or the insulating film is modified, and a more dense insulating film can be formed as compared with an insulating film formed by a CVD method or a sputtering method. Therefore, defects such as pinholes can be suppressed, and the characteristics of the semiconductor device can be improved. By oxidizing or nitriding a semiconductor layer or an insulating film using plasma treatment, the surface of the semiconductor layer or the insulating film is modified, and a more dense insulating film can be formed as compared with an insulating film formed by a CVD method or a sputtering method. Therefore, defects such as pinholes can be suppressed, and the characteristics of the semiconductor device can be improved. Since a more dense insulating film can be formed as compared with an insulating film formed by a CVD method or a sputtering method, defects such as pinholes can be suppressed, and the characteristics of the semiconductor device can be improved. Note that plasma treatment is performed The insulating film 7024 formed in this way is called a plasma-treated insulating film.

[0182] Note that the sidewall 7021 can be made of silicon oxide (SiO x ) or silicon nitride (SiN x ). As a method of forming the sidewall 7021 on the side surface of the gate electrode 7017, for example, after forming the gate electrode 7017, silicon oxide (SiO ) or nitrogen x is deposited, and then anisotropic etching is used to etch the silicon oxide (SiO ) or silicon nitride (SiN x ) film. By doing so x , a silicon oxide (SiO ) or silicon nitride (SiN x ) film can be left only on the side surface of the gate electrode 7017, so that the sidewall 7021 can be formed on the side surface of the gate electrode 7017. x ) or silicon nitride (SiN x ) film

[0183] So far, the structure of the transistor and the method of manufacturing the transistor have been described. Here, wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium ( )), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), ), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc ( Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As) ), gallium (Ga), indium (In), tin (Sn), oxygen (O), and are selected from the group consisting of ), gallium (Ga), indium (In), tin (Sn), oxygen (O). ​​​One or more selected elements, or one or more elements selected from said group as components of a compound, an alloy material (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (Zn O), tin oxide (SnO), cadmium tin oxide (CTO), aluminum neodymium (Al-Nd) , magnesium silver (Mg-Ag), molybdenum niobium (Mo-Nb), etc.) formed is desirable. Or, wirings, electrodes, conductive layers, conductive films, terminals, etc. are desirably formed with substances obtained by combining these compounds. Or, a compound of silicon (silicide) with one or more elements selected from said group (e.g., aluminum silicon , molybdenum silicon, nickel silicide, etc.), a compound of nitrogen with one or more elements selected from said group (e.g., titanium nitride, tantalum nitride, molybdenum nitride, etc.) are desirably had and formed.

[0184] Note that silicon (Si) may contain an n-type impurity (such as phosphorus) or a p-type impurity (such as boron). By silicon containing an impurity, improvement of conductivity or behavior similar to that of a normal conductor becomes possible. Therefore, it becomes easier to use as wirings, electrodes, etc.

[0185] Note that as silicon, silicon having various crystallinities such as single crystal, polycrystal (polysilicon), microcrystal (microcrystalline silicon) can be used. Or, as silicon, silicon having no crystallinity such as amorphous (amorphous silicon) can be used. By using single crystal silicon or polycrystal silicon, wirings, electrodes, conductive layers, conductive The resistance of the electrofilm, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon it is possible to form wirings, etc. in a simple process.

[0186] Note that since aluminum or silver has a high conductivity, signal delay can be reduced. Furthermore, since it is easy to etch, it is easy to pattern and fine processing can be performed .

[0187] Note that since copper has a high conductivity, signal delay can be reduced. When using copper, it is desirable to form a laminated structure in order to improve adhesion.

[0188] Note that molybdenum or titanium has advantages such as not causing defects even when in contact with an oxide semiconductor (ITO, IZO, etc.) or silicon being easy to etch, and having high heat resistance, etc., and thus is desirable.

[0189] Note that tungsten has advantages such as high heat resistance and thus is desirable.

[0190] Note that neodymium has advantages such as high heat resistance and thus is desirable. In particular, when forming an alloy of neodymium and aluminum, the heat resistance is improved and it is less likely for aluminum to cause hillocks.

[0191] Note that silicon has advantages such as being able to be formed simultaneously with the semiconductor layer of a transistor and having high heat resistance, etc., and thus is desirable.

[0192] Note that ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S nO), cadmium tin oxide (CTO) have light-transmitting properties, and thus are used for portions that transmit light. It can be used, for example, as a pixel electrode or a common electrode.

[0193] Note that IZO is desirable because it is easy to etch and process. When IZO is etched, it is also less likely to leave residues. Therefore, when IZO is used as a pixel electrode, it can reduce the occurrence of defects (such as short circuits and orientation disorders) in liquid crystal elements and light-emitting elements.

[0194] Note that wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. may have a single-layer structure or a multilayer structure. By having a single-layer structure, the manufacturing processes of wiring, electrodes, conductive layers, conductive films, terminals, etc. can be simplified, the number of process days can be reduced, and the cost can be reduced. Alternatively, by having a multilayer structure, while taking advantage of the merits of each material, the demerits can be reduced, and wiring, electrodes, etc. with good performance can be formed. For example, by including a low-resistance material (such as aluminum) in a multilayer structure, the resistance of the wiring can be reduced. As another example, by sandwiching a low heat-resistant material with a high heat-resistant material to form a multilayer structure, while taking advantage of the merits of the low heat-resistant material, the heat resistance of wiring, electrodes, etc. can be increased. For example, it is desirable to form a multilayer structure in which a layer containing aluminum is sandwiched between layers containing molybdenum, titanium, neodymium, etc.

[0195] Here, when wiring, electrodes, etc. are in direct contact with each other, they may have an adverse effect on each other. For example, one wiring, electrode, etc. may penetrate into the material of the other wiring, electrode, etc. and change its properties, making it impossible to achieve the original purpose. As another example, a high-resistance portion is formed or manufactured. When doing so, problems may occur and it may become impossible to manufacture normally. In such a case, it is advisable to sandwich or cover a material that is prone to reaction due to the laminated structure with a material that is less prone to reaction. For example, when connecting ITO and aluminum, it is desirable to sandwich a titanium, molybdenum, neodymium alloy between ITO and aluminum. As another example, when connecting silicon and aluminum, it is desirable to sandwich a titanium, molybdenum, neodymium alloy between silicon and aluminum. In addition, a wiring refers to something in which a conductor is arranged. The shape of the wiring may be linear or may be short and not linear. Therefore, an electrode is included in the wiring. In addition, in this embodiment, the content described in each figure can be freely combined or replaced as appropriate with respect to the content described in another embodiment. (Embodiment 6) In this embodiment, an example of an electronic device will be described. Figures 12(A) to 12(H), Figures 13(A) to 13(D) are diagrams showing an electronic device. These electronic devices can have a housing 9630, a display unit 9631, a speaker 9633, an LED lamp 9634, operation keys 9635, connection terminals 9636, a sensor 9637 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9638, etc.

[0196] When problems occur during manufacturing and normal production becomes impossible, it may be beneficial to sandwich or cover materials that are prone to reaction due to the laminated structure with materials that are less reactive. For instance, when connecting ITO and aluminum, it is advisable to sandwich a titanium, molybdenum, neodymium alloy between them. Similarly, when connecting silicon and aluminum, it is also desirable to sandwich this alloy between them. Moreover, wiring refers to a component where a conductor is placed. The shape of the wiring can be linear or non - linear and short. Thus, electrodes are included within the wiring.

[0197] In this embodiment, the content described in each figure can be freely combined or replaced as appropriate with respect to the content described in other embodiments.

[0198] (Embodiment 6) In this embodiment, an example of an electronic device will be explained.

[0199] Figures 12(A) through 12(H), Figures 13(A) through 13(D) are diagrams depicting an electronic device. These electronic devices can have a housing 9630, a display unit 9631, a speaker 9633, an LED lamp 9634, operation keys 9635, connection terminals 9636, a sensor 9637 (which includes the function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9638, etc.

[0200] Figure 12(A) is a mobile computer, and in addition to what has been described above, it can have a switch 9670, an infrared port 9671, etc. Figure 12(B) is a portable type image playback device (for example, a DVD playback device), and in addition to what has been described above, it can have a second display unit 9632, a recording medium reading unit 9672, etc. Figure 12(C) is a goggle type display, and in addition to what has been described above, it can have a second display unit 9632, a support unit 9673, earphones 9674, etc. Figure 12(D) is a portable game machine, and in addition to what has been described above, it can have a recording medium reading unit 9672, etc. Figure 12(E) is a digital camera with a TV reception function, and in addition to what has been described above, it can have an antenna 9675, a shutter button 9676, an imaging unit 9677, etc. Figure 12(F) is a portable type game machine, and in addition to what has been described above, it can have a second display unit 9632, a recording medium reading unit 9672, etc. Figure 12(G) is a TV receiver, and in addition to what has been described above, it can have a tuner, an image processing unit, etc. Figure 12(H) is a portable TV receiver and in addition to what has been described above, it can have a charger 9678 capable of transmitting and receiving signals, etc. Figure 13(A) is a display, and in addition to what has been described above, it can have a support stand 9679, etc. Figure 13(B) is a camera, and in addition to what has been described above, it can have an external connection port 9680, a shutter button 9676, an imaging unit 9677, etc. Figure 13(C) is a computer, and in addition to what has been described above, it can have a pointing device 96 81, an external connection port 9680, a reader / writer 9682, etc. Figure 13(D) is a mobile phone, and in addition to those described above, it can have a transmission unit, a reception unit, a tuner for one-segment partial reception service for mobile terminals, etc. It can have a tuner for one-segment partial reception service for mobile terminals, etc.

[0201] The electronic devices shown in FIGS. 12(A) to 12(H) and FIGS. 13(A) to 13(D) can have various functions. For example, functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, displaying a calendar, date, or time, etc. functions, a function of controlling processing by various software (programs), a wireless communication function, a function of connecting to various computer networks using the wireless communication function, using the wireless communication function to send or receive various data, a function of reading a program or data recorded on a recording medium and displaying it on the display unit, etc. can be had. Furthermore, in an electronic device having a plurality of display units, a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a three-dimensional image by displaying an image considering parallax on a plurality of display units, etc. can be had. Furthermore, in an electronic device having an imaging unit, functions such as a function of taking a still image, a function of taking a moving image, a function of automatically or manually correcting the taken image, a function of saving the taken image on a recording medium (external or built into the camera), a function of displaying the taken image on the display unit, etc. can be had. Note that the functions that the electronic devices shown in FIGS. 12(A) to 12(H) and FIGS. 13(A) to 13(D) can have are not limited to these, and they can have various functions. The electronic devices described in this embodiment have a display unit for displaying some kind of information.

[0202] The electronic devices described in this embodiment have a display unit for displaying some kind of information. It is characterized in that the electronic device can display a very uniform image because the influence of the characteristic variations of the transistors is reduced in the display unit. Since the influence of the characteristic variations of the transistors is reduced, a very uniform image can be displayed.

[0203] Next, application examples of the semiconductor device will be described.

[0204] Fig. 13(E) shows an example in which the semiconductor device is provided integrally with a building. Fig. 13(E ) includes a housing 9730, a display unit 9731, a remote control device 9732 which is an operation unit, a speaker 9 733, etc. The semiconductor device is wall-mounted and integrated with the building, and can be installed without requiring a large installation space. It can be installed without requiring a large installation space.

[0205] Fig. 13(F) shows another example in which the semiconductor device is provided integrally with a building inside the building. The display panel 9741 is attached integrally with the unit bus 9742, and a bather can view the display panel 9741.

[0206] In addition, in this embodiment, although a wall and a unit bath are exemplified as the building, this embodiment is not limited thereto, and the semiconductor device can be installed in various buildings.

[0207] Next, an example in which the semiconductor device is provided integrally with a moving body will be shown.

[0208] Fig. 13(G) is a diagram showing an example in which the semiconductor device is provided in an automobile. The display panel 9761 is attached to the vehicle body 9762 of the automobile, and can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. Note that it may have a navigation function. It can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. Note that it may have a navigation function. It may have a navigation function.

[0209] FIG. 13(H) is a diagram showing an example in which a semiconductor device is provided integrally with a passenger airplane. FIG. 13(H) is a diagram showing the shape during use when a display panel 9782 is provided on the ceiling 9781 above the seat of a passenger airplane. The display panel 9782 is integrally attached to the ceiling 97 81 via a hinge portion 9783, and the extension and contraction of the hinge portion 9783 allows passengers to view the display panel 9782. The display panel 9782 has a function of displaying information when operated by a passenger.

[0210] In addition, in the present embodiment, examples of the moving body include an automobile body and an airplane body, but the present invention is not limited thereto, and it can be installed on various things such as motorcycles, automobiles (including cars, buses, etc.), trains (including monorails, railways, etc.), ships, and the like.

[0211] In addition, in the present embodiment, the content described in each figure can be freely combined, replaced, etc. as appropriate with respect to the content described in another embodiment.

Description of Reference Numerals

[0212] 101 Transistor 102 Capacitor element 103 Wiring 104 Wiring 105 Display element 106 Wiring 107 Wiring 201 Switch 202 Switch 203 Switch 204 Switch 205 Switch 206 Switch 601 Switch 602 Switch 603 Switch 606 Wiring 901 Switch 101A Transistor 101B Transistor 101M Transistor 102A Capacitor Element 102B Capacitor Element 102M Capacitor Element 103M Wiring 104M Wiring 105M Light Emitting Element 106M Wiring 201M Transistor 202M Transistor 203M Transistor 402A Capacitor Element 402B Capacitor Element 402C A to Capacitor Element 601M Transistor 602M Transistor 606M Wiring 606N Wiring 606P Wiring 606Q Wiring 7001 Transistor 7002 Transistor 7003 Transistor 7004 Transistor 7005 Transistor 7006 Transistor 7011 Substrate 7012 Insulating Film 7013 Semiconductor Layer 7014 Semiconductor Layer 7015 Semiconductor Layer 7016 Insulating Film 7017 Gate Electrode 7018 Insulating Film 7019 Insulating Film 7021 Sidewall 7022 Mask 7023 Conductive Film 7024 Insulating Film 8601 Anode 8602 Cathode 8603 Hole Transport Region 8604 Electronic transport area 8605 Hybrid area 8606 Area 8607 Area 8608 Area 8609 Area 9601 Display panel 9602 Pixel section 9603 Scanning line drive circuit 9604 Signal line drive circuit 9605 Circuit board 9606 Control circuit 9607 Signal splitting circuit 9608 Connection wiring 9611 Tuner 9612 Video signal amplification circuit 9613 Video signal processing circuit 9614 Signal line drive circuit 9615 Audio signal amplification circuit 9616 Audio signal processing circuit 9617 Speaker 9618 Control circuit 9619 Input section 9621 Display panel 9622 Control circuit 9623 Signal splitting circuit 9624 Scanning line drive circuit 9630 Housing 9631 Display section 9632 Display section 9633 Speaker 9634 LED lamp 9635 Operation key 9636 Connection terminal 9637 Sensor 9638 Microphone 9670 Switch 9671 Infrared port 9672 Recording medium reading section 9673 Support section 9674 Earphone 9675 Antenna 9676 Shutter button Image receiving unit Charger Support stand External connection port Pointing device Reader / writer Housing Display unit Remote control device Speaker Display panel Unit bus Display panel Vehicle body Ceiling Display panel Hinge part 1000M pixels 1000N pixels 1000P pixels 1000Q pixels 1001M wiring 1002M wiring 1002N wiring 1003M wiring 1004M wiring 1005M wiring 1005N wiring 402AA capacitive element 402AB capacitive element

Claims

1. A pixel includes first to sixth transistors, a light-emitting element, a first capacitor, and first to third wirings, the first wiring has a function of supplying a video signal to the pixel, the third wiring has a function of supplying a first potential to the pixel; the first transistor has a function of controlling a magnitude of a current flowing between the second wiring and the light-emitting element in accordance with a potential corresponding to the video signal; each of the second transistor to the sixth transistor has a function as a switch; one of the source and the drain of the second transistor is always electrically connected to the first wiring; the other of the source and the drain of the second transistor is always electrically connected to the one of the source and the drain of the first transistor; one of the source and the drain of the third transistor is always electrically connected to the second wiring; the other of the source and the drain of the third transistor is always electrically connected to the one of the source and the drain of the first transistor; one of the source and the drain of the fourth transistor is always electrically connected to the gate of the first transistor; the other of the source and the drain of the fourth transistor is always electrically connected to the other of the source and the drain of the first transistor; one of the source and the drain of the fifth transistor is always electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the fifth transistor is always electrically connected to a pixel electrode of the light-emitting element, one of the source and the drain of the sixth transistor is always electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the sixth transistor is always electrically connected to the third wiring; one electrode of the first capacitance element is always electrically connected to the gate of the first transistor; the other electrode of the first capacitance element is always electrically connected to the second wiring; When a current is supplied to the light-emitting element via the first transistor, the sixth transistor is in a non-conductive state; a period during which the second transistor is in a non-conductive state and the sixth transistor is in a conductive state; Light-emitting device.

2. A pixel includes first to sixth transistors, a light-emitting element, a first capacitor, and first to third wirings, the first wiring has a function of supplying a video signal to the pixel, the third wiring has a function of supplying a first potential to the pixel; the first transistor has a function of controlling a magnitude of a current flowing between the second wiring and the light-emitting element in accordance with a potential corresponding to the video signal; each of the second transistor to the sixth transistor has a function as a switch; one of the source and the drain of the second transistor is always electrically connected to the first wiring; the other of the source and the drain of the second transistor is always electrically connected to the one of the source and the drain of the first transistor; one of the source and the drain of the third transistor is always electrically connected to the second wiring; the other of the source and the drain of the third transistor is always electrically connected to the one of the source and the drain of the first transistor; one of the source and the drain of the fourth transistor is always electrically connected to the gate of the first transistor; the other of the source and the drain of the fourth transistor is always electrically connected to the other of the source and the drain of the first transistor; one of the source and the drain of the fifth transistor is always electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the fifth transistor is always electrically connected to a pixel electrode of the light-emitting element, one of the source and the drain of the sixth transistor is always electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the sixth transistor is always electrically connected to the third wiring; one electrode of the first capacitance element is always electrically connected to the gate of the first transistor; the other electrode of the first capacitance element is always electrically connected to the second wiring; When a current is supplied to the light-emitting element via the first transistor, the sixth transistor is in a non-conductive state; a period during which the second transistor is in a non-conductive state and the sixth transistor is in a conductive state; the sixth transistor is not brought into a conductive state during a period in which the video signal is input to the pixel via the second transistor; Light-emitting device.

3. In claim 1 or claim 2, the first transistor is a p-channel transistor; Light-emitting device.

4. In any one of claims 1 to 3, the first capacitance element has a plurality of second capacitance elements connected in parallel; Light-emitting device.

Images