Display

Abstract

To provide a display that can easily improve definition, and to provide a display having an imaging function.SOLUTION: A display has pixels, first wiring, and second wiring. The pixel has first to fourth transistors, a first capacitive element, and a light-emitting device. The first transistor is connected with the first wiring at one of its source and drain, and is connected with a gate of the second transistor and one electrode of the first capacitive element at the other of the source and drain. The light-emitting device is connected with one of a source and a drain of the second transistor at one electrode. A first data potential is given to the first wiring. A second data potential and a reset potential are given to the second wiring in different periods. When the third transistor is turned on, it supplies the second data potential to the other electrode of the first capacitive element. When the fourth transistor is turned on, it supplies the reset potential to the one electrode of the light-emitting device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] 1. Field of the Invention The present invention relates to a display device. 1. Field of the Invention The present invention relates to a display device having an imaging function. Regarding.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, and the like. , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof Semiconductor devices function by utilizing the semiconductor properties. This refers to all devices that can do this. [Background technology]

[0003] In recent years, display devices have been required to have higher definition in order to display high-resolution images. , smartphones, tablet devices, notebook PCs (personal computers), etc. In information terminal devices, display devices are required to have not only high definition but also low power consumption. Furthermore, it has functions such as a touch panel and a function to capture fingerprints for authentication. There is a demand for display devices that not only display information but also have various additional functions.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Utilizing the luminescence (electroluminescence, hereafter referred to as EL) phenomenon The light-emitting element (also referred to as EL element) used is thin and lightweight, and has high speed response to input signals. and can be driven using a low-voltage DC power supply. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. An optical device is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device that can easily have high resolution. An object of one embodiment of the present invention is to provide a display device that can consume less power.

[0007] Another embodiment of the present invention provides a display device that can function as a touch panel. An object of one embodiment of the present invention is to provide a display device having an imaging function. This is one of the challenges.

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device including a pixel, a first wiring, and a second wiring. The pixel includes first to fourth transistors, a first capacitor, and a light-emitting element. One of the source and drain of the first transistor is electrically connected to the first wiring, and the other is electrically connected to the gate of the second transistor and one electrode of the first capacitor. The light-emitting element has one electrode electrically connected to one of the source and drain of the second transistor. The first wiring has a function of applying a first data potential. The second wiring has a function of applying a first data potential. The second data potential and the reset potential are applied for different periods. When the transistor is in an on state, the transistor receives a second data potential applied to the second wiring. The fourth transistor has a function of supplying a current to the other electrode of the first capacitor. In the ON state, the reset potential applied to the second wiring is applied to one electrode of the light emitting element. It has the function of supplying

[0010] Another embodiment of the present invention is a display device including a pixel, a first wiring, and a second wiring. The pixel includes first to fourth transistors, a first capacitor, and a light-emitting element. The first transistor has one of a source and a drain electrically connected to a first wiring. the other is electrically connected to the gate of the second transistor and one electrode of the first capacitor. The light-emitting element has one electrode connected to one of the source and drain of the second transistor. The first wiring has a function of applying a first data potential. The wiring has a function of applying the second data potential and the reset potential for different periods. The third transistor has one of a source and a drain electrically connected to the second wiring. The other electrode of the fourth transistor is electrically connected to the other electrode of the first capacitor. One of the source and drain is electrically connected to a second wiring, and the other is one of the electrodes of the light-emitting element. and electrically connected to each other.

[0011] Another embodiment of the present invention is a display device including a pixel, a first wiring, and a second wiring. The pixel includes first to fourth transistors, a first capacitor, and a light-emitting element. The first transistor has one of a source and a drain electrically connected to a first wiring. the other is electrically connected to the gate of the second transistor and one electrode of the first capacitor. The light-emitting element has one electrode connected to one of the source and drain of the second transistor. The first wiring has a function of applying a first data potential. The wiring has a function of applying the second data potential and the reset potential for different periods. The third transistor has one of a source and a drain electrically connected to the second wiring. the other electrode of the first capacitor element and one of the source and drain of the fourth transistor. The fourth transistor has the other of the source and the drain electrically connected to the light-emitting element. The electrode is electrically connected to one of the electrodes of the element.

[0012] In the above, it is preferable that the device further includes a third wiring and a fourth wiring. The wiring is electrically connected to the gate of the first transistor and the gate of the fourth transistor. The fourth wiring is electrically connected to the gate of the third transistor.

[0013] In the above, it is preferable that a second capacitance element is further included. One electrode of the second transistor is electrically connected to the gate of the second transistor, and the other electrode of the first transistor is electrically connected to the gate of the light-emitting element. The electrode is electrically connected to the other electrode.

[0014] In the above, it is preferable to have a plurality of pixels. In this case, the plurality of pixels are arranged in rows. The second wiring is arranged in a matrix in the row and column directions. In each of the pixels, the third transistor and the fourth transistor are electrically connected. It is preferable that this be done.

[0015] Alternatively, the second wiring may be connected to each of three adjacent pixels among a plurality of pixels arranged in the row direction. The third transistor and the fourth transistor are electrically connected to each other. In this case, it is preferable that the three adjacent pixels emit light of different colors. It is preferable that

[0016] In addition, it is preferable that the above-mentioned device further comprises a light receiving element. In this case, the light receiving element is The light emitting element and the light receiving element have a function of receiving light emitted by the light emitting element. It is preferably provided on a surface.

[0017] In the above, the light emitting element has a first electrode, a light emitting layer, and a common electrode stacked thereon. It is preferable that the light receiving element has a second electrode, an active layer, and a common electrode stacked thereon. In this case, it is preferable that the light-emitting layer and the active layer contain different organic compounds, and the first The electrode and the second electrode are provided on the same plane and spaced apart from each other, and the common electrode is connected to the light-emitting layer and the active layer. It is preferable that the insulating film is provided so as to cover the insulating film.

[0018] Alternatively, in the above, the light-emitting element may include a first electrode, a common layer, a light-emitting layer, and a common electrode. , are preferably stacked. The light receiving element also includes a second electrode, a common layer, an active layer, and In this case, the light-emitting layer and the active layer are preferably made of different organic layers. The first electrode and the second electrode are provided on the same surface and spaced apart from each other, and a common electrode is provided to cover the light-emitting layer and the active layer, and the common layer is provided to cover the first electrode and the second electrode. It is preferable that a stator be provided. [Effects of the Invention]

[0019] According to one embodiment of the present invention, a display device that can easily achieve high resolution can be provided. It is possible to provide a display device that can reduce the

[0020] According to another aspect of the present invention, a display device that can function as a touch panel is provided. Alternatively, a display device having an imaging function can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0022] [Figure 1] Fig. 1(A) is a block diagram of a display device, and Fig. 1(B) is a circuit diagram of a pixel. [Figure 2] FIG. 2 is a timing chart illustrating a method for driving the display device. [Figure 3] FIG. 3 is a circuit diagram of a pixel. [Figure 4] 4(A) and 4(B) are circuit diagrams of the pixel. [Figure 5] FIG. 5 is a block diagram of the display device. [Figure 6] FIG. 6 is a circuit diagram of a pixel. [Figure 7] FIG. 7 is a circuit diagram of a pixel. [Figure 8] 8A and 8B are timing charts illustrating a method for driving a display device. [Figure 9] 9(A) and 9(B) are block diagrams of a display device. [Figure 10]10(A) and 10(B) are block diagrams of a display device. [Figure 11] Fig. 11(A) is a circuit diagram of a pixel, and Fig. 11(B) is a timing chart illustrating a method for driving a display device. [Figure 12] FIG. 12 is a circuit diagram of a pixel. [Figure 13] FIG. 13 is a timing chart illustrating a method for driving the display device. [Figure 14] 14(A), 14(B), 14(D), 14(F) to 14(H) are diagrams showing configuration examples of a display device, and Fig. 14(C) and Fig. 14(E) are diagrams showing example images. [Figure 15] 15A to 15D are diagrams illustrating configuration examples of display devices. [Figure 16] 16A to 16C are diagrams illustrating configuration examples of display devices. [Figure 17] 17(A) and 17(B) are diagrams illustrating a configuration example of a display device. [Figure 18] 18A to 18C are diagrams illustrating configuration examples of display devices. [Figure 19] FIG. 19 is a diagram illustrating an example of the configuration of a display device. [Figure 20] FIG. 20 is a diagram illustrating an example of the configuration of a display device. [Figure 21] 21A and 21B are diagrams illustrating a configuration example of a display device. [Figure 22] 22A and 22B are diagrams illustrating a configuration example of a display device. [Figure 23] FIG. 23 is a diagram illustrating an example of the configuration of a display device. [Figure 24] 24(A) and 24(B) are diagrams showing configuration examples of electronic devices. [Figure 25] 25A to 25D are diagrams showing configuration examples of electronic devices. [Figure 26] 26A to 26F are diagrams showing configuration examples of electronic devices. [Figure 27] 27(A) to 27(C) are diagrams showing imaging results according to the example. DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, embodiments will be described with reference to the drawings. It is understood that the present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily apparent to those skilled in the art that various modifications may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0025] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area The figures may be exaggerated for clarity and are not necessarily limited to that scale. I can't.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0027] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0028] Also, the functions of "source" and "drain" can be changed by using transistors with different polarities. Or, when the direction of the current changes during circuit operation, the positions may be swapped. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It shall be possible.

[0029] In this specification, the EL layer is provided between a pair of electrodes of a light-emitting element and includes at least It refers to a layer containing a light-emitting substance (also called a light-emitting layer) or a laminate containing a light-emitting layer. .

[0030] In this specification, a display panel, which is one aspect of a display device, displays (outputs) an image or the like on a display surface. Therefore, a display panel is one aspect of an output device.

[0031] In this specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). Integrated Circuit) or TCP (Tape Carrier Packet ge) or a connector such as COG (Chip On Ground) is attached to the board. The IC mounted on the display panel module is called a display module. It may also be called a display panel or simply a display panel.

[0032] In this specification and the like, a touch panel, which is one aspect of a display device, is a device for displaying images and the like on a display surface. The function of displaying the information and detecting when a detectable object such as a finger or stylus touches, presses, or approaches the display surface. It also functions as a touch sensor to detect when something is touching the screen. A rule is one form of input / output device.

[0033] The touch panel is, for example, a display panel (or display device) with a touch sensor, A touch panel can also be called a display panel (or display device) with a touch function. Alternatively, the display panel may have a touch sensor panel. It may also be configured to have a touch sensor function inside or on the surface.

[0034] In addition, in this specification, a touch panel substrate on which a connector or IC is mounted is referred to as a touch panel. , touch panel module, display module, or simply touch panel. be.

[0035] (Embodiment 1) In this embodiment, a structural example and a driving method of a display device according to one embodiment of the present invention will be described. do.

[0036] One embodiment of the present invention is a display device having a plurality of pixels arranged in a matrix. The display device includes first to fourth transistors, a capacitor, and a light-emitting element. The device has first and second wirings electrically connected to the pixels.

[0037] The second transistor has a function of controlling a current flowing through the light emitting element, and is a driving transistor. The first transistor functions as a gate electrode. The first wiring functions as a switch that controls conduction and non-conduction. A first data potential is supplied to the first wiring. The first transistor is turned on (conducting), The first data potential can be applied to the gate of the second transistor via the

[0038] The second wiring is supplied with a second data potential and a reset potential for different periods.

[0039] The capacitor has one electrode (also called the first electrode) electrically connected to the gate of the second transistor. The third transistor is electrically connected to the other electrode (also referred to as the second electrode) of the capacitor. The third transistor functions as a switch that controls the conduction and non-conduction between the first wiring and the second wiring. When the second transistor is turned on, the second electrode of the capacitor is connected to the second electrode of the capacitor through the third transistor. A data potential of 100 kJ / s can be applied.

[0040] After applying a first data potential to the gate of the second transistor, the first transistor The gate of the second transistor is set to an off state (non-conducting state) to be in a floating state, A second data potential is applied to the second electrode of the capacitor through the third transistor. By this, the second transistor is turned on in response to the second data potential by capacitive coupling via the capacitive element. The potential of the gate of the transistor can be changed from the first data potential.

[0041] In this way, the pixel combines two types of data potentials to drive the light-emitting element. For example, a potential can be generated to be supplied to the gate of the first transistor. The display device can perform gradation correction by the second data potential. The maximum potential that can be supplied by a drive circuit (source driver circuit) that supplies the potential and the second data potential This allows a potential exceeding the potential of the driving circuit to be generated inside the pixel. Since the voltage can be lowered, the power consumption of the driving circuit can be reduced.

[0042] The fourth transistor is connected to one electrode (first electrode) of the light-emitting element and to the second wiring. The second wiring functions as a switch for supplying the reset potential. When the fourth transistor is turned on, the first electrode of the light-emitting element is The supply of the first data potential and the supply of the reset potential are performed at the same time. By doing so, the gate-source of the second transistor can be controlled without depending on the electrical characteristics of the light-emitting element. This allows a high quality display to be achieved.

[0043] In a display device according to one embodiment of the present invention, the second wiring includes a wiring for supplying a second data potential and a lead. This can also serve as wiring for supplying a set potential. Even if the wiring is large, the number of wires can be reduced, and high definition can be achieved.

[0044] Furthermore, the second wiring is a wiring for supplying a second data potential and a reset potential to two or more pixels. This allows the number of wires in the display device to be further reduced. This is preferable.

[0045] Here, a third transistor is provided between the second wiring and the fourth transistor. When both the third transistor and the fourth transistor are in the on state, A reset potential may be supplied to the first electrode of the light-emitting element. This reduces the number of wirings provided, making it easier to achieve higher definition.

[0046] Alternatively, the second wiring and one of the source and the drain of the fourth transistor are electrically connected. The third transistor may not be provided between the two. Compared to supplying the reset potential through the transistor, This is preferable because it is possible to reduce the difference between the reset potential and the potential applied to the first electrode of the light-emitting element. stomach.

[0047] A more specific example will be described below with reference to the drawings.

[0048] [Configuration example 1] 1A shows a block diagram of a display device 10. The display device 10 includes a display unit 11, a driving It has a circuit section 12 and a drive circuit section 13.

[0049] The display unit 11 has a plurality of pixels 21 arranged in a matrix. The pixels 21 are connected to wiring S L, wiring VL, wiring GL1, and wiring GL2. VL is electrically connected to the drive circuit unit 12. The wiring GL1 and the wiring GL2 are The drive circuit section 12 is electrically connected to the source line drive circuit (source driver The driving circuit unit 13 functions as a gate line driving circuit (also called a gate driver). It functions as a

[0050] [Pixel configuration example 1-1] FIG. 1B shows an example of a circuit diagram of the pixel 21. The pixel 21 includes a transistor M1, a transistor transistor M2, transistor M3, transistor M4, capacitance element C1, capacitance element C2, and and a light-emitting element EL.

[0051] The transistor M1 has a gate electrically connected to the wiring GL1 and a source and a drain One of the source and drain is electrically connected to the wiring SL, and the other of the source and drain is one of the capacitors C1. an electrode (first electrode), one electrode (first electrode) of the capacitance element C2, and a transistor M2 The transistor M2 has a source and a drain that are electrically connected to the gate of the transistor M1. The other of the source and drain is electrically connected to the wiring AL, and the other of the source and drain is connected to one electrode ( The transistor M3 has a gate that is electrically connected to the anode electrode (first electrode). It is electrically connected to the wiring GL2, and one of the source and drain is electrically connected to the wiring VL. The other of the source and drain is electrically connected to the other electrode (second electrode) of the capacitance element C1. The transistor M4 has a gate electrically connected to the wiring GL1 and a source and a One of the source and drain is electrically connected to the wiring VL, and the other of the source and drain is a light emitting element. One electrode of EL, the other electrode (second electrode) of the capacitance element C2, and the The light-emitting element EL is electrically connected to one of the source and drain electrodes. The cathode electrode, the second electrode) is electrically connected to the wiring CL.

[0052] Transistor M1, transistor M3, and transistor M4 function as switches. The transistor M2 is a transistor for controlling the current flowing through the light-emitting element EL. It works like this.

[0053] A data potential D (also referred to as a first data potential) is applied to the wiring SL. is the data potential D W (also called the second data potential) and the reset potential V R but for different periods Different selection signals are applied to the wiring GL1 and the wiring GL2. The selection signals include a potential that makes the transistor conductive and a potential that makes the transistor non-conductive. Includes place.

[0054] The wiring AL is a wiring to which an anode potential is applied. The wiring CL is a wiring to which a cathode potential is applied. In the pixel 21, the anode potential is set to a potential higher than the cathode potential. do.

[0055] Here, as shown in FIG. 1B, the node to which the gate of the transistor M2 is connected is defined as: Let's call this node N1.

[0056] In this specification, a node is a circuit that allows electrical connection of elements that constitute a circuit. Therefore, "the node to which A is connected" means , A is electrically connected to A and can be considered to have the same potential as A. Elements that allow electrical connections within the Even if one or more elements (inductor, resistor, diode, etc.) are placed, they can be considered to have the same potential as A. If so, the wiring can be considered as the node to which A is connected.

[0057] Here, the transistors M1 and M3 functioning as switches and For transistor M4, a transistor with extremely small leakage current in the non-conducting state is used. In particular, a transistor using an oxide semiconductor for a semiconductor layer in which a channel is formed is preferably used. In addition, a transistor using an oxide semiconductor can be preferably used for the transistor M2. By applying the transistor, all transistors can be formed through a common manufacturing process. It is preferable that the transistor M2 has a silicon ( It is also possible to use amorphous silicon, polycrystalline silicon, and single crystal silicon. Alternatively, silicon transistors may be used for all the transistors.

[0058] [Driving method example 1] An example of a method for driving the pixel 21 shown in FIG. 1B is shown in the timing chart of FIG. 2 shows the signals input to the wiring GL1, wiring GL2, wiring SL, and wiring VL. 10 also shows an example of the transition of the potential at the node N1 and the signals that are output.

[0059] For ease of explanation, the threshold voltage of a transistor and the on-state voltage of a transistor are used below. Consider the effects of resistance in the on state, transistor gate capacitance, wiring resistance, parasitic capacitance, etc. do not.

[0060] <Before time T1> Before time T1, the wiring GL1 and the wiring GL2 are connected to the transistors that are in a non-conductive state. A potential (here, a low-level potential) is applied to the wiring SL and the wiring VL. Data to be written to the pixels in the previous row is given. The potential of node N1 is , the potential V written in the previous frame X is a given state.

[0061] <Period T1-T2> At time T1, a potential ( Here, a high-level potential is applied to the wiring SL, and a data potential D is applied to the wiring VL is the reset potential V R is given.

[0062] During the period T1-T2, the transistors M1, M3, and M The first electrode of the light-emitting element EL and the second electrode of the capacitive element C2 are respectively in a conductive state. The reset potential V R is supplied. The second electrode is connected to a reset potential V through a transistor M3. R is supplied. N1 is supplied with a data potential D via a transistor M1.

[0063] In this way, when the data potential D is written to the node N1, the anode potential of the light-emitting element EL is The reset potential V is applied to the node to which the pole is connected. R By writing Regardless of the state, the potential difference between the node and the node N1, i.e., the gate The voltage between the gate and source of transistor M2 can be determined. The voltage between the electrodes is the reset potential V R Based on this, DV R This becomes:

[0064] The capacitance element C1 is connected to the data potential D and the reset potential V R charged according to the potential difference This is the state.

[0065] At this time, the anode electrode of the light-emitting element EL is supplied with a reset potential V R Given that When the voltage between the pair of electrodes of the light-emitting element EL does not exceed the threshold voltage of the light-emitting element EL, Therefore, the reset potential V R By setting the above, the light emitting element EL does not emit light.

[0066] <Period T2-T3> Subsequently, at time T2, a low-level potential is applied to the wiring GL1, and a low-level potential is applied to the wiring GL2. A high level potential is applied to the wiring VL, and a data potential D W is given.

[0067] When the wiring GL1 is at a low level potential, the transistors M1 and M4 are non- This puts the node N1 into a floating state.

[0068] The second electrode of the capacitance element C1 is supplied with a data potential D W is given The voltage DV R Since the second electrode is in a charged state, The potential is reset potential V R to data potential D W As the voltage changes to The potential of node N1 changes from data potential D to potential V D+W Here, the potential of the node N1 changes to (i.e., the change in potential V D+W and the data potential D) is the capacitance value of the capacitive element C1 and The capacitance value of the capacitance element C1 is determined by the capacitance value of the capacitance element C2. If the capacitance value of the data potential D W and Lise Net potential V R The value is close to the difference between

[0069] This causes the gate of transistor M2 to be supplied with a potential V D+W is given. A current corresponding to the potential flows through the transistor M2 to the light-emitting element EL, The child EL can be made to emit light.

[0070] For example, the data potential D W By applying a high level potential to the light emitting element EL, The brightness can be increased. On the other hand, the data potential D W As a result, a low level potential is applied. Therefore, the luminance of the light emitting element EL can be reduced.

[0071] By using such a driving method, the light emission luminance can be adjusted for each pixel 21. It is possible to achieve pixel dimming to optimize brightness according to the image being displayed. By performing the correction, it is possible to realize a display with high display quality. The device generates video data that combines data for display and data for correction. In the past, it was necessary to generate and supply data to pixels, but in one aspect of the present invention, data for display and correction Since the data for the pixel and the pixel for the pixel can be supplied separately, the configuration of the drive circuit etc. can be simplified. This can be done.

[0072] <After time T3> At time T3, a low-level potential is applied to the line GL2. The data write operation to 1 is completed. After time T3, the write operation to the next row begins. do.

[0073] The above is a description of an example of a method for driving the pixel 21.

[0074] [Variation 1] FIG. 3 shows a circuit diagram of a pixel 21a, which is a modification of the pixel 21 shown in FIG. 1(B).

[0075] In the pixel 21a, the transistors M1 to M4 have back gates. Each transistor has a pair of gates electrically connected together. This increases the transistor on-state current and improves the saturation characteristics, resulting in higher reliability. A highly efficient display device can be realized.

[0076] In this example, all the transistors are configured such that a pair of gates are electrically connected. However, the pixel 21a has a transistor that connects one gate to another wiring. For example, one of the pair of gates may be arranged to be applied with a constant potential. By connecting the gates to the wires, the stability of the electrical characteristics can be improved. One of the gates is connected to a wiring that is given a potential to control the threshold voltage of the transistor. may be connected to

[0077] In addition, although an example in which all four transistors have back gates has been shown, The present invention is not limited to the above, but also includes transistors with and without back gates. may be mixed.

[0078] [Pixel configuration example 1-2] Below, we will explain an example of a pixel configuration that is partially different from the pixel illustrated in FIG. 1(B). Reveal.

[0079] 4A shows a circuit diagram of pixel 21b. Compared with pixel 21, pixel 21b has the following features: The main difference is the connections of the transistor M3, the transistor M4, and the capacitance element C1.

[0080] The transistor M3 has a gate electrically connected to the wiring GL2 and a source and a drain One of the source and drain is electrically connected to the wiring VL, and the other of the source and drain is the second and one of the source and drain of the transistor M4. Other connection relationships can be referenced to pixel 21 in FIG. 1(B).

[0081] The pixel 21b has a second electrode of the capacitance element C1 and a source and drain of the transistor M3. The other of these is electrically connected to one of the source and drain of the transistor M4. This configuration simplifies the wiring within the pixel 21b, making it suitable for high definition. There are.

[0082] The pixel 21b has two transistors between the wiring VL and the anode electrode of the light-emitting element EL. In this configuration, transistors M3 and M4 are provided.

[0083] [Variation 2] FIG. 4B shows a circuit diagram of a pixel 21c, which is a modification of the pixel 21b shown in FIG. 4A. vinegar.

[0084] In the pixel 21c, the transistors M1 to M4 have back gates. Each transistor has a pair of gates electrically connected to each other, similar to the pixel 21a (see FIG. 3). are actively connected.

[0085] As with the pixel 21a, not all transistors have a pair of gates electrically connected. It is not necessary to have a structure in which the transistors are connected to other wirings, and the transistors may be connected to other wirings. Also, not all transistors necessarily have a back gate. The transistors may include both transistors without a back gate and transistors with a back gate. .

[0086] The above-mentioned driving method example 1 can be used as an example of the driving method for the pixel 21b and the pixel 21c. Cut.

[0087] The above is the explanation of the first configuration example.

[0088] [Configuration example 2] Below, a description will be given of a configuration example of a display device that is partially different from the above configuration example 1. In the following, explanations of parts that overlap with those described above may be omitted.

[0089] 5 shows a block diagram of the display device 10a. The display device 10a includes a display unit 11a, a drive unit 11b, and a The display unit 11a includes a circuit unit 12 and a drive circuit unit 13. It has a plurality of pixels 20 .

[0090] The pixel 20 includes a sub-pixel 21R, a sub-pixel 21G, and a sub-pixel 21B. The sub-pixel 21R is a sub-pixel that exhibits red, the sub-pixel 21G is a sub-pixel that exhibits green, and The sub-pixel 21B is a sub-pixel that exhibits blue. Although the example in which the pixel 20 has three color sub-pixels has been shown here, it is possible to It may have more than one color sub-pixel.

[0091] The wiring GL1 and the wiring GL2 are arranged in the row direction (extension direction of the wiring GL1, etc.). The wiring SLR and the wiring S are electrically connected to the pixel 1R, the sub-pixel 21G, and the sub-pixel 21B. The LG and the wiring SLB are sub-pixels arranged in the column direction (extension direction of the wiring VL, etc.). The wiring VL is electrically connected to the sub-pixel 21R, the sub-pixel 21G, or the sub-pixel 21B. The wiring VL is electrically connected to the pixels 20 arranged in the direction of the arrow A. The pixel 21R, the sub-pixel 21G, and the sub-pixel 21B are electrically connected to each other.

[0092] [Pixel configuration example 2-1] 6 shows an example of a circuit diagram of the pixel 20. The pixel 20 includes sub-pixels 21R, 21G, and sub-pixel 21B.

[0093] The pixel 20 shown in FIG. 6 has a subpixel 21R, a subpixel 21G, and a subpixel 21B. This is an example in which the configuration of the pixel 21a illustrated in FIG. 3 is applied. The subpixel 21R and the subpixel 21B do not necessarily have to have a back gate. 1B is applied to the sub-pixels 21G and 21B. Good too.

[0094] The sub-pixel 21R has a light-emitting element ELR that emits red light. The sub-pixel 21B has a light-emitting element ELG that emits blue light. The pixel 20 may have sub-pixels that have light-emitting elements that emit light of other colors. For example, the pixel 20 may have a light emitting element that emits white light in addition to the three sub-pixels. Alternatively, the pixel may have a sub-pixel having a light-emitting element that emits yellow light, or a sub-pixel having a light-emitting element that emits yellow light.

[0095] The wiring VL is connected to the transistors of the subpixels 21R, 21G, and 21B. The transistor M1 is electrically connected to one of the source and drain of the transistor M3. As a result, the number of wiring VL can be reduced to one-third compared to the configuration illustrated in Configuration Example 1. Therefore, it is possible to realize a display device with higher resolution.

[0096] [Pixel configuration example 2-2] 7 shows an example of a circuit diagram of the pixel 20a. The pixel 20a includes a sub-pixel 21aR and a sub-pixel 21b. 1aG and sub-pixel 21aB.

[0097] The pixel 20a shown in FIG. 7 includes subpixels 21aR, 21aG, and 21aB. Each of these sub-pixels is an example of applying the configuration of the pixel 21c illustrated in FIG. Each of the transistors does not necessarily have to have a back gate. The pixel 21aR, the sub-pixel 21aG, and the sub-pixel 21aB are the same as those shown in FIG. A configuration in which the method b is applied may also be used.

[0098] The pixel 20a shown in FIG. 7 can also reduce the number of wirings VL, similar to the pixel 20, and therefore can achieve high resolution. These pixels are suitable for image processing.

[0099] [Driving method example 2-1] In the following, an example of a method for driving the pixel 20 shown in FIG. 6 will be described with reference to the timing shown in FIG. 8(A). The following description will be given using a block diagram. In FIG. 8(A), there are wiring GL1, wiring GL2, wiring SLR, Illustrated are signals input to the wirings SLG, SLB, and VL.

[0100] <Before time T11> Before time T11, the transistors on the wiring GL1 and the wiring GL2 are set to a non-conductive state. A potential (here, a low-level potential) is applied to the wiring SLR, wiring SLG, and wiring SL B and wiring VL are supplied with data to be written to the pixels in the previous row. There are.

[0101] <Period T11-T12> At time T11, a potential that turns on the transistors is applied to the wiring GL1 and the wiring GL2. (Here, a high level potential is applied.) are the data potentials D R , data potential D G , data potential D B is given. The wiring VL has a reset potential V R is given.

[0102] During the period T11-T12, the transistors M1 and M3 in each subpixel , and the transistor M4 is turned on, and the anode electrode of each light-emitting element is connected to the transistor M Reset potential V via 4R A transistor is supplied to the second electrode of the capacitance element C1. Reset potential V via transistor M3 R Also, the gate of transistor M2 is The data potential D R , data potential D G , or data potential D B is supplied.

[0103] At this time, the anodes of the light-emitting elements ELR, ELG, and ELB The electrode is supplied with a reset potential V R The voltage between the pair of electrodes of each light-emitting element is given. However, the reset potential V R By setting No unintended light emission occurs.

[0104] <Period T12-T13> Subsequently, at time T12, a low-level potential is applied to the wiring GL1, and a low-level potential is applied to the wiring GL2. is given a high level potential, and the wiring VL is given a data potential D W is given.

[0105] When transistor M1 is turned off, the gate of transistor M2 is floating. In this state, data is applied to the second electrode of the capacitance element C1 via the transistor M3. potential D W By using the capacitive coupling, the potential of the gate of the transistor M2 is can be varied.

[0106] Here, the sub-pixels 21R, 21G, and 21B are supplied with the same data potential D W but As a result, the light emitting elements of the subpixels 21R, 21G, and 21B For example, the luminance of the data potential D W As a high-level By applying a potential to the subpixels 21R, 21G, and 21B, the light-emitting elements of the subpixels 21R, 21G, and 21B are turned on. The luminance of light emitted can be increased uniformly.

[0107] By using such a driving method, it is possible to adjust the light emission luminance for each pixel 20. It is possible to achieve pixel dimming to optimize brightness according to the image being displayed. By performing the correction, it is possible to realize a display with high display quality. The device generates video data that combines data for display and data for correction. In the past, it was necessary to generate and supply data to pixels, but in one aspect of the present invention, data for display and correction Since the data for the pixel and the pixel for the pixel can be supplied separately, the configuration of the drive circuit etc. can be simplified. can.

[0108] In addition, since the wiring VL is shared by multiple sub-pixels, the correction voltage supplied to the wiring VL is This reduces the amount of data required to increase the frame frequency. This also reduces power consumption.

[0109] <After time T13> At time T13, a low level potential is applied to the line GL2. The data write operation to the element 20 is completed. After time T13, the write operation for the next row is started. Transition to.

[0110] [Driving method example 2-2] An example of a driving method different from the above driving method example 2-1 will be described below with reference to FIG. 8(B). Here, the timing chart will be used to explain the timing chart. When the drive circuit unit 12 that supplies the data potential to the SLB has a demultiplexer circuit An example will be described.

[0111] The demultiplexer circuit divides the input data signal into multiple lines. Here, a single demultiplexer circuit is used to demultiplex the wiring S An example in which data potentials are sequentially supplied to the LR, the line SLG, and the line SLB will be described.

[0112] <Before time T21> Before time T21, the transistors on the wiring GL1 and the wiring GL2 are set to a non-conductive state. A potential (here, a low-level potential) is applied to the wiring SLR, wiring SLG, and wiring SL B and wiring VL are supplied with data to be written to the pixels in the previous row. There are.

[0113] <Period T21-T22> At time T21, a potential that turns on the transistors is applied to the wiring GL1 and the wiring GL2. (here, a high level potential) is applied. Also, the wiring SLR is applied with a data potential D R is given The wiring SLG and wiring SLB are each provided with a line for writing to the pixels in the previous row. Data is given. Also, the wiring VL is connected to a reset potential V R is given.

[0114] At this time, the sub-pixels 21G and 21B contain data to be written to the pixels in the previous row. The anode electrodes of the light-emitting elements ELG and ELB are provided with Reset potential V R Since the voltage between the pair of electrodes of each light-emitting element is given, The reset potential V RBy setting Furthermore, the sub-pixel 21R is supplied with the data potential D R is written, but similarly As a result, the light emitting element ELR does not emit light. W is written to each sub-pixel Since each light-emitting element does not emit light until it is turned on, an unintended image may be displayed, resulting in a decrease in display quality. This can prevent this from happening.

[0115] <Period T22-T23> At time T22, the transistors for the wiring GL1 and the wiring GL2 are still in a conductive state. When a potential is applied to the wiring SLG, a data potential D G is given, and subpixel 21G At this time, the line SLR is supplied with a data potential D R However, the wiring SLB has the previous The data to be written to the pixels in the row is given. The daughter ELR, the light-emitting element ELG, and the light-emitting element ELB do not emit light.

[0116] <Period T23-T24> At time T23, the transistors for the wiring GL1 and the wiring GL2 are still in a conductive state. When a potential is applied to the wiring SLB, a data potential D B is given, and subpixel 21B At this time, the line SLR is supplied with a data potential D R However, the wiring SLG has a data potential D G Also at this time, the light-emitting elements ELR and ELG Therefore, the light-emitting element ELB does not emit light.

[0117] <Period T24-T25> Subsequently, at time T24, a low-level potential is applied to the wiring GL1, and a low-level potential is applied to the wiring GL2. is given a high level potential, and the wiring VL is given a data potential D W This gives us Data potential D W The light emitting element of each sub-pixel can emit light at the luminance corrected by .

[0118] The above is a description of an example of the driving method.

[0119] Although the driving method for the pixel 20 has been described here, the same driving method can be applied to the pixel 20a. The dynamic method can be applied.

[0120] [Variation 2-1] The display device 10a illustrated in FIG. 5 has a structure in which one wiring VL is provided for one pixel 20. However, a single wiring VL may be configured to connect to a plurality of pixels 20.

[0121] FIG. 9A shows a block diagram of the display device 10b.

[0122] The display device 10b shows an example in which one wiring VL electrically connects all the pixels 20. The sub-pixels 21R, 21G, and 21H of the plurality of pixels 20 arranged in the row direction are 1B has the same reset potential V R and the data potential D W This gives us the following for each row: Correction data can be written to

[0123] The display device 10b is connected to a reset potential V R and data potential D W The number of wiring VL that is supplied This makes it possible to realize a very high-definition display device. can.

[0124] In addition, when the area of ​​the display unit 11a is large or when the number of pixels 20 arranged in the row direction is large, In addition, due to the influence of the electrical resistance of the wiring VL, the potential given to the pixel 20 close to the wiring VL is 9B, a difference may occur between the potential applied to the pixel 20 and the potential applied to the pixel 20 at a distance. By using the configuration of the display device 10c, such problems can be prevented.

[0125] The display device 10c has a wiring VL1 and a wiring VL2 at both ends of the display unit 11a. The same signal is output to the wiring VL1 and the wiring VL2 from the drive circuit unit 12. The same signal (reset potential V R , and the data potential D W ) can effectively prevent the above-mentioned problems.

[0126] In this case, one wiring VL (or a pair of wirings VL1 and VL2) Although the configuration in which the pixel 20 is connected is shown, the present invention is not limited to this. For example, It is also possible to arrange the wiring VL at a ratio of one line. It is possible to realize so-called local dimming, which adjusts the light brightness.

[0127] The above is the explanation of configuration example 2.

[0128] [Configuration example 3] A display device according to one embodiment of the present invention has a function of capturing an image in addition to a function of displaying an image. More specifically, the pixel of the display device may have a light emitting element and a light receiving element. The light receiving elements arranged in a matrix form capture an image of the object. The light-emitting element can also be used as a light source when capturing an image with a light-receiving element. The light emitted from the light-emitting element is reflected by the object, and the light-receiving element captures the reflected light. Cut.

[0129] The display device according to one embodiment of the present invention has a second data potential (data potential D W ) for each pixel For example, when a light emitting element is used as a light source for imaging, By using a potential that increases the gradation of the pixel as the second data potential, the light emitting brightness of each light emitting element can be increased. Furthermore, in the display device of one embodiment of the present invention, It is also possible to correct the gradation on a pixel-by-pixel basis, so you can adjust the brightness of only the pixels in the range you want to use as a light source. It is also possible to increase

[0130] For example, the display device captures biometric information such as fingerprints and palm prints using a light-receiving element, This can be applied to personal authentication. The display device also detects the position of an object touching the display. By detecting the touch, it can be applied to touch sensors. By capturing images of these objects, it can be applied to image scanners.

[0131] A more specific example will be described below with reference to the drawings.

[0132] 10A shows a block diagram of the display device 10d. The display device 10d includes a display unit 11 b, includes a drive circuit unit 12, a drive circuit unit 13, a drive circuit unit 14, a circuit unit 15, and the like.

[0133] The display unit 11b has a plurality of pixels 30 arranged in a matrix. The image sensor 20 includes a pixel 21R, a sub-pixel 21G, a sub-pixel 21B, and an imaging pixel 22. The imaging pixel 22 is The light-receiving element functions as a photoelectric conversion element.

[0134] The imaging pixel 22 is electrically connected to the wiring TX, the wiring SE, the wiring RS, and the wiring WX. The wiring TX, wiring SE, and wiring RS are electrically connected to the drive circuit unit 14. The wiring WX is electrically connected to the circuit portion 15.

[0135] The drive circuit unit 14 generates signals for driving the imaging pixels 22, and transmits the signals to the wirings SE and T The circuit section 15 has a function of outputting the signal to the imaging pixel 22 via the signal lines X and RS. Receives a signal output from element 22 via wiring WX and outputs it to the outside as image data. The circuit section 15 functions as a readout circuit.

[0136] In the display device 10d, the wiring VLR connected to the subpixel 21R and the wiring VLR connected to the subpixel 21G are The example shown includes a line VLG and a line VLB connected to the subpixel 21B. The line VLG and the wiring VLB are electrically connected to the drive circuit unit 12. 12 is a wiring to which a reset potential and a data potential are supplied for different periods.

[0137] As shown in FIG. 10B, a display device 10e has one wiring per pixel 30. In addition, the above-mentioned modified example 2-1 (FIGS. 9(A) and 9(B)) may be configured to provide a VL. Similarly, a single wiring VL may be connected to a plurality of pixels 30.

[0138] [Pixel configuration example 3-1] FIG. 11A shows an example of a circuit that can be applied to the imaging pixel 22. , transistor M5, transistor M6, transistor M7, transistor M8, capacitance element The sensor has a photodiode C3 and a photodetector PD.

[0139] The transistor M5 has a gate electrically connected to the wiring TX and a source and a drain The source and drain are electrically connected to the anode electrode of the light receiving element PD, and the other of the source and drain is One of the source and drain of the transistor M6, the first electrode of the capacitance element C3, and the The gate of the transistor M6 is electrically connected to the wiring RS and the other of the source and drain is electrically connected to the wiring V1. One of the source and drain of the transistor M7 is electrically connected to the wiring V3. The other of the source and drain is electrically connected to one of the source and drain of transistor M8. The transistor M8 has a gate electrically connected to the wiring SE, and a source and a The other drain is electrically connected to the wiring WX. The capacitor C3 is electrically connected to the wiring CL. The second electrode of the capacitor C3 is electrically connected to the wiring V2. is connected.

[0140] Transistor M5, transistor M6, and transistor M8 function as switches. The transistor M7 functions as an amplifying element (amplifier).

[0141] The wiring TX, the wiring SE, and the wiring RS are connected to the transistors A signal for controlling the non-conductive state is given to the wiring WX. S will be output.

[0142] A fixed potential is applied to the wiring V1 and the wiring V3. The potential to be applied to the circuit section 15 can be selected depending on the configuration of the readout circuit. The wiring V2 may be given a fixed potential or two or more different potentials. The wiring CL is a wiring to which a cathode potential is applied. A higher potential than that of the line V1 is applied to the line CL so that a reverse bias is applied.

[0143] As shown in FIG. 12, each transistor may have a back gate. In Fig. 12, each transistor has a pair of gates electrically connected to each other.

[0144] In FIG. 12, all the transistors are configured such that a pair of gates are electrically connected. However, the present invention is not limited to this. The imaging pixel 22 is a transistor that connects one gate to another wiring. For example, one of the pair of gates may be applied with a constant potential. By connecting the pair of gates to the wiring, the stability of the electrical characteristics can be improved. One of the gates is given a potential that controls the threshold voltage of the transistor. It may be connected to a wire.

[0145] In addition, although an example in which all four transistors have back gates has been shown, The present invention is not limited to the above, but also includes transistors with and without back gates. may be mixed.

[0146] [Driving method example 3-1] An example of a method for driving the imaging pixels 22 will be described below with reference to the timing chart shown in FIG. 11(B). 11B shows a diagram of a wiring TX, a wiring SE, a wiring RS, and a wiring The signal input to WX is shown.

[0147] <Before time T31> Before time T31, a low-level potential is applied to the wiring TX, the wiring SE, and the wiring RS. In addition, the wiring WX is in a state where no data is being output, and is at a low level here. A predetermined potential may be applied to the wiring WX.

[0148] <Period T31-T32> At time T31, a potential (which turns on the transistor) is applied to the wiring TX and the wiring RS. In this case, a high level potential is applied to the wiring SE. A potential (here, a low-level potential) is applied.

[0149] At this time, the transistors M5 and M6 are in a conductive state, and the wiring V1 to the anode electrode of the light receiving element PD via the transistor M6 and the transistor M5. A potential lower than the potential of the cathode electrode is applied. In other words, a reverse bias is applied to the light receiving element PD. The voltage is applied.

[0150] The potential of the wiring V1 is also supplied to the first electrode of the capacitance element C3, and the capacitance element C3 is charged. It will be in an electrified state.

[0151] The period T31-T32 can also be called a reset (initialization) period.

[0152] <Period T32-T33> At time T32, a low-level potential is applied to the wiring TX and the wiring RS. As a result, the transistors M5 and M6 are brought into a non-conductive state.

[0153] Since the transistor M5 is in a non-conducting state, a reverse bias voltage is applied to the photodetector PD. Here, photoelectric conversion occurs when light is incident on the photodetector PD. , charges are accumulated in the anode electrode of the light receiving element PD.

[0154] The period T32-T33 can also be called an exposure period. It can be set according to the sensitivity, the amount of incident light, etc., but at least compared to the reset period It is preferable to set a sufficiently long period.

[0155] During the period T32-T33, the transistors M5 and M6 are non-conductive. Therefore, the potential of the first electrode of the capacitance element C3 is the low level supplied from the wiring V1. The potential is maintained at the same level as the capacitor.

[0156] <Period T33-T34> At time T33, a high-level potential is applied to the wiring TX. The charge stored in the photodetector PD is transferred to the photodiode PD through the transistor M5. This transfers the current to the first electrode of the capacitance element C3. The potential of the node connected to the light receiving element PD rises according to the amount of charge accumulated in the light receiving element PD. , the gate of the transistor M7 is given a potential according to the amount of exposure of the light receiving element PD. This becomes:

[0157] <Period T34-T35> At time T34, a low level potential is applied to the wiring TX. The node to which the gate of transistor M7 is connected becomes floating. Since the light receiving element PD is always exposed, the After the transfer operation is completed, transistor M5 is turned off, This can prevent the potential of the node to which the gate of transistor M7 is connected from changing.

[0158] <Period T35-T36> At time T35, a high level potential is applied to the wire SE. The period T35-T36 can also be called a readout period. .

[0159] For example, the transistor M7 and the transistor included in the circuit unit 15 form a source follower circuit. In this case, the data potential output to the wiring WX is D S is determined depending on the gate potential of the transistor M7. The potential obtained by subtracting the threshold voltage of the transistor M7 from the gate potential of the transistor M7 is the data potential. rank D S The potential is output to the wiring WX as a readout signal, and the readout signal is read out by a readout circuit included in the circuit portion 15. Overflowing.

[0160] The transistor M7 and the transistor included in the circuit unit 15 form a source ground circuit. Moreover, the data can also be read out by the read circuit that the circuit unit 15 has.

[0161] <After time T36> At time T36, a low level potential is applied to the line SE. This completes the reading of the data from the imaging pixel 22. After time T36, the data read operation for the next row and onward is carried out in sequence.

[0162] The above is the description of driving method example 3-1.

[0163] As shown in FIG. 13, during the exposure period T32-T33, the wiring TX A high-level potential may be applied. At this time, the transistor M5 is in a conducting state during the exposure period. This allows exposure and transfer to be performed simultaneously. This allows for a longer exposure period. Alternatively, the driving frequency can be increased.

[0164] By using the driving methods illustrated in FIG. 11B and FIG. 13, the exposure period and the readout period can be set separately, so that the same image can be displayed on all the imaging pixels 22 provided on the display unit 11b. The data can be read out sequentially after exposure. When global shutter driving is performed, the image The transistors that function as switches in the pixel 22 (particularly the transistors M5 and M6) The oxide semiconductor, which has extremely low leakage current in the non-conducting state, was applied to the Preferably, a transistor is used.

[0165] The above is the explanation of configuration example 3.

[0166] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0167] (Embodiment 2) In this embodiment, a display device having an imaging function will be described. The device includes a light emitting element and a light receiving element. The display device has a function of displaying an image and a function of detecting the object to be detected. The function of detecting the position using the reflected light from the object, and the function of taking a picture of a fingerprint etc. using the reflected light from the object to be detected. The display device exemplified below has a function as a touch panel and It can also be said that it has a function as a fingerprint sensor.

[0168] A display device according to one embodiment of the present invention includes a light-emitting element (light-emitting device) that emits a first light, The light receiving element (light receiving device) receives the light of the light receiving element. The light wavelength range of the light receiving element is the same as that of the light emitting element. It is preferable that the first light be visible light or infrared light. When infrared light is used as the first light, a light emitting element that emits visible light is also used. The light emitting element may have a structure in which the light emitting element

[0169] The display device also has a pair of substrates (also referred to as a first substrate and a second substrate). The display element and the light receiving element are disposed between a first substrate and a second substrate. The first substrate is located on the side opposite the display surface side, and the second substrate is located on the side opposite the display surface side.

[0170] Visible light emitted from the light emitting element is emitted to the outside through the first substrate. By having a plurality of light emitting elements arranged in a matrix, an image can be displayed. Cut.

[0171] The first light emitted from the light emitting element reaches the surface of the first substrate. When an object touches the surface of the first substrate, the first light is scattered at the interface between the first substrate and the object, and the A part of the scattered light is incident on the light receiving element. When the light receiving element receives the first light, it detects the intensity of the first light. The display device can convert the light into an electrical signal according to the light and output it. By having multiple light receiving elements, it is possible to detect the position information, shape, etc. of an object that touches the first substrate. That is, the display device can be an image sensor panel, a touch sensor panel, etc. It can function as such.

[0172] Even if the object does not touch the surface of the first substrate, the first light that passes through the first substrate The light is reflected or scattered on the surface of the object, and the reflected or scattered light is transmitted through the first substrate. Therefore, the display device is a non-contact touch sensor panel (Near Touch It can also be used as a touch panel.

[0173] When visible light is used as the first light, the first light used for displaying an image is transmitted to the touch sensor. In this case, the light emitting element functions as a display element and a light source. The first light also functions as a light source, which simplifies the configuration of the display device. When infrared light is used, it is not visible to the user, so the visibility of the displayed image is reduced. Image pickup or sensing can be performed by the light receiving element without any trouble.

[0174] When infrared light is used as the first light, it is preferable that the first light contains infrared light, preferably near-infrared light. In particular, a near-infrared light having one or more peaks in the wavelength range of 700 nm to 2500 nm is preferable. Infrared light can be preferably used, particularly in the wavelength range of 750 nm to 1000 nm. By using light having one or more peaks in the This is preferable because it spreads.

[0175] When a fingertip touches the surface of the display device, the shape of the fingerprint can be captured. There are concave and convex parts, and the first light is likely to be scattered at the convex parts of the fingerprint that touches the surface of the first substrate. Therefore, the intensity of the scattered light incident on the light receiving element overlapping the convex portion of the fingerprint is high, and the intensity of the scattered light incident on the light receiving element overlapping the concave portion of the fingerprint is high. The intensity of the scattered light incident on the light receiving element is reduced. The device having the display device according to one embodiment of the present invention can utilize the captured fingerprint image. This can be used to perform fingerprint authentication, a type of biometric authentication.

[0176] The display device can also capture images of blood vessels, particularly veins, in fingers and hands. Light with a wavelength of 760 nm or thereabouts is not absorbed by reduced hemoglobin in the veins, so it can be The position of veins is detected by capturing reflected light from the palm or finger with a light-receiving element and creating an image. The device having the display device according to one aspect of the present invention can display an image of the captured veins. This can be used to perform vein authentication, a type of biometric authentication.

[0177] Furthermore, a device including the display device of one embodiment of the present invention can perform touch sensing and fingerprint authentication. This allows for low-cost authentication without increasing the number of parts. It is possible to perform high-security biometric authentication at low cost.

[0178] The light receiving element is preferably an element capable of receiving both visible light and infrared light. The light-emitting element has both a light-emitting element that emits infrared light and a light-emitting element that emits visible light. It is preferable that the reflected light reflected by the user's finger is visible light. By receiving the infrared light with a light receiving element, the shape of the fingerprint can be captured. This allows for both fingerprint and vein authentication. This makes it possible to perform the process on a single display device. These may be performed at different times or simultaneously. By capturing the fingerprint and vein information simultaneously, the fingerprint and vein information are both included. This makes it possible to obtain image data that is accurate enough to achieve more accurate biometric authentication.

[0179] Furthermore, the display device of one embodiment of the present invention has a function of detecting the health condition of a user. For example, the reflectance and the reflectance for visible light and infrared light may be changed in response to changes in the oxygen saturation level in the blood. By utilizing the change in oxygen saturation and transmittance, the time modulation of the oxygen saturation can be obtained. It is also possible to measure the glucose concentration in the dermis and the neutral fat in the blood. The concentration and the like can also be measured using infrared light or visible light. The device has a function to acquire information that is an indicator of the user's health condition. It can be used as a healthcare device.

[0180] The first substrate may be a sealing substrate for sealing the light emitting element, a protective film, or the like. In addition, a resin layer may be provided between the first substrate and the second substrate to bond them together. may have

[0181] Here, the light emitting element is an OLED (Organic Light Emitting Diode) and QLED(Quantum-dot Light Emitting D) It is preferable to use an EL element such as an EL element (e.g., a luminescent element). , fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence The material exhibiting thermally activated delayed fluorescence (TDF) d fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.) In addition, as a light emitting element, micro LED (Light Emitting Diode) LEDs such as LEDs (LEDs) can also be used.

[0182] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element acts as a photoelectric conversion element that detects the light incident on the light receiving element and generates an electric charge. The amount of charge generated by a photoelectric conversion element is determined according to the amount of incident light. As the light receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. Organic photodiodes are easy to make thin, lightweight, and large in area, and are also easy to form. The high degree of freedom in shape and design allows it to be applied to a variety of display devices.

[0183] The light-emitting element can have, for example, a stacked structure including a light-emitting layer between a pair of electrodes. The light receiving element may have a laminated structure including an active layer between a pair of electrodes. The active layer can be made of a semiconductor material, such as an inorganic semiconductor material such as silicon. can be used.

[0184] It is also preferable to use an organic compound in the active layer of the light-receiving element. It is preferable that the electrode of the light receiving element and one of the electrodes (also called a pixel electrode) are provided on the same surface. Furthermore, the other electrodes of the light emitting element and the light receiving element are formed by an electrode ( It is more preferable that the light emitting element and the light receiving element are connected to each other through a common electrode. It is more preferable that the light emitting element and the light receiving element have a layer. The process can be simplified, the manufacturing cost can be reduced, and the manufacturing yield can be improved. Cut.

[0185] A more specific example will be described below with reference to the drawings.

[0186] [Display panel configuration example 1] [Configuration Example 1-1] 14A shows a schematic diagram of a display panel 50. The display panel 50 includes a substrate 51, a substrate 52, light receiving element 53, light emitting element 57R, light emitting element 57G, light emitting element 57B, functional layer 55, etc. It has.

[0187] The light emitting element 57R, the light emitting element 57G, the light emitting element 57B, and the light receiving element 53 are connected to the substrate 51. It is provided between the substrates 52.

[0188] The light emitting element 57R, the light emitting element 57G, and the light emitting element 57B are red (R), green (G), and ) or blue (B) light.

[0189] The display panel 50 has a plurality of pixels arranged in a matrix. Each subpixel has one light-emitting element. For example, a pixel has , a configuration having three sub-pixels (three colors of R, G, B, or yellow (Y), cyan (C), and and magenta (M), or a configuration with four sub-pixels (R, G, B, white ( In addition, the pixel can be configured with four colors (e.g., red, green, blue, and yellow) or four colors (e.g., red, green, blue, and yellow). The light receiving element 53 may be provided in all pixels, or in some pixels. Furthermore, one pixel may have a plurality of light receiving elements 53.

[0190] 14(A) shows a state in which a finger 60 touches the surface of the substrate 52. A part of the light emitted by G is reflected or scattered at the contact point between the substrate 52 and the finger 60. A part of the reflected light or scattered light is incident on the light receiving element 53, and the finger 60 moves toward the substrate 52. That is, the display panel 50 can function as a touch panel. It can function as such.

[0191] The functional layer 55 includes circuits for driving the light emitting elements 57R, 57G, and 57B, and The functional layer 55 includes a switch, a transistor, Capacitances, wiring, etc. are provided. When the light receiving element 53 is driven by a passive matrix method, a switch or a transistor A configuration without a resistor may also be used.

[0192] The display panel 50 may have a function for detecting the fingerprint of a finger 60. 1 is a schematic enlarged view of a contact portion when a finger 60 is in contact with the substrate 52. FIG. 14B shows light emitting elements 57 and light receiving elements 53 arranged alternately.

[0193] A fingerprint is formed on the finger 60 by recesses and protrusions. As shown in the figure, the raised portions of the fingerprint touch the substrate 52, and the scattered light (shown by the dashed arrows) is scattered at the contact surface. ) occurs.

[0194] As shown in FIG. 14B, the intensity distribution of the scattered light scattered at the contact surface between the finger 60 and the substrate 52 is The strength is highest in the direction perpendicular to the contact surface, and the angle becomes larger in the oblique direction. Therefore, the intensity distribution is low when the light receiving element is located directly below the contact surface (overlapping with the contact surface). The intensity of the light received by the element 53 is the highest. The light is totally reflected by the other surface of the substrate 52 (the surface opposite to the contact surface) and reaches the light receiving element 53 side. Therefore, the fingerprint shape can be clearly captured.

[0195] The arrangement interval of the light receiving elements 53 is the distance between two convex portions of a fingerprint, preferably the distance between adjacent concave portions and convex portions. By making the interval smaller than the distance between the portions, a clear image of the fingerprint can be obtained. Since the distance between the recesses and protrusions of a human fingerprint is approximately 200 μm, for example, the arrangement of the light receiving element 53 The row spacing is 400 μm or less, preferably 200 μm or less, and more preferably 150 μm or less. , more preferably 100 μm or less, and even more preferably 50 μm or less, Preferably, the thickness is 10 μm or more, and more preferably 20 μm or more.

[0196] An example of a fingerprint image captured by the display panel 50 is shown in FIG. 14(C). Within the imaging range 63, the outline of the finger 60 is indicated by a broken line, and the outline of the contact part 61 is indicated by a dashed line. In the contact portion 61, the difference in the amount of light incident on the light receiving element 53 causes high contrast. Therefore, a clear image of the fingerprint 62 can be captured.

[0197] The display panel 50 can also function as a touch panel or a pen tablet. In FIG. 14(D), the tip of the stylus 65 is in contact with the substrate 52, and the broken arrow indicates the position of the substrate 52. It shows the slide in the direction.

[0198] As shown in FIG. 14(D), the tip of the stylus 65 and the scattered light at the contact surface of the substrate 52 The scattered light is incident on the light receiving element 53 located at the part overlapping with the contact surface, and the stylus The position of the tip of the nozzle 65 can be detected with high accuracy.

[0199] FIG. 14(E) shows an example of a trajectory 66 of the stylus 65 detected by the display panel 50. The display panel 50 is capable of detecting the position of a detection object such as a stylus 65 with high positional accuracy. Therefore, it is possible to perform high-resolution drawing in drawing applications, etc. Also, unlike capacitive touch sensors or electromagnetic induction touch pens, Since it is possible to detect the position of even highly insulating objects, the tip of the stylus 65 The material of the writing implements is not important, and various writing implements (e.g., brushes, glass pens, quills, etc.) may be used. It is also possible.

[0200] Here, an example of a pixel applicable to the display panel 50 is shown in FIG. 14(F) to FIG. 14(H). show.

[0201] The pixels shown in FIG. 14(F) and FIG. 14(G) each include a red (R) light-emitting element 57R. , a green (G) light-emitting element 57G, a blue (B) light-emitting element 57B, and a light-receiving element 53. The pixels are each made up of a light emitting element 57R, a light emitting element 57G, a light emitting element 57B, and a light receiving element 5 3. The pixel circuit for driving the pixel 3.

[0202] FIG. 14(F) shows a 2×2 matrix arrangement of three light-emitting elements and one light-receiving element. FIG. 14(G) shows an example in which three light emitting elements are arranged in a row, and a horizontal In this example, one light receiving element 53 is arranged.

[0203] The pixel shown in FIG. 14(H) is an example having a white (W) light-emitting element 57W. Four light-emitting elements are arranged in a row, and a light-receiving element 53 is arranged below them.

[0204] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0205] [Configuration Example 1-2] Hereinafter, a light emitting element that emits visible light, a light emitting element that emits infrared light, and a light receiving element will be described. An example of a configuration that can be implemented will be described below.

[0206] The display panel 50A shown in FIG. 15A has the same configuration as that shown in FIG. 14A, but also has a light-emitting The light emitting element 57IR is a light emitting element that emits infrared light IR. At this time, the light receiving element 53 receives at least the infrared light IR emitted by the light emitting element 57IR. It is preferable to use an element that can receive visible light and infrared light as the light receiving element 53. It is more preferable to use an element that can receive both types of light.

[0207] As shown in FIG. 15(A), when a finger 60 touches the substrate 52, light is emitted from the light emitting element 57IR. The infrared light IR is reflected or scattered by the finger 60, and a part of the reflected or scattered light is When the light is incident on the light receiving element 53, the position information of the finger 60 can be obtained.

[0208] 15(B) to 15(D) show an example of a pixel that can be applied to the display panel 50A.

[0209] In FIG. 15(B), three light emitting elements are arranged in a row, and below them, a light emitting element 57IR and 15C shows an example in which the light-emitting element 53 is arranged side by side. Four light emitting elements including 57IR are arranged in a row, and a light receiving element 53 is disposed below them. This is an example.

[0210] FIG. 15(D) shows a configuration in which a light emitting element 57IR is at the center, and three light emitting elements and a receiving element are arranged on all four sides. This is an example in which an optical element 53 is arranged.

[0211] In the pixels shown in FIGS. 15B to 15D, the light-emitting elements and the light-emitting elements The positions of the light receiving element and the light receiving element can be interchanged.

[0212] This concludes the description of the first example of the display panel configuration.

[0213] [Display panel configuration example 2] [Configuration Example 2-1] FIG. 16A is a schematic cross-sectional view of the display panel 100A.

[0214] The display panel 100A includes a light receiving element 110 and a light emitting element 190. 1, a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115. The light emitting element 190 includes a pixel electrode 191, a common layer 112, a light emitting layer 193, and a common layer 114. 14 and a common electrode 115.

[0215] Pixel electrode 111, pixel electrode 191, common layer 112, active layer 113, light-emitting layer 193, common The layer 114 and the common electrode 115 may each have a single layer structure or a laminated structure. That's fine.

[0216] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 191 can be formed using the same material and in the same process.

[0217] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is , a layer used in common by the light receiving element 110 and the light emitting element 190.

[0218] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 is The active layer 113 overlaps with the pixel electrode 191 via the common layer 112. The active layer 113 contains a first organic compound. The light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0219] Common layer 114 is located on common layer 112 , active layer 113 , and light-emitting layer 193 . The common layer 114 is a layer that is used in common by the light receiving element 110 and the light emitting element 190 .

[0220] The common electrode 115 is connected to the pixel electrode via the common layer 112, the active layer 113, and the common layer 114. The common electrode 115 has a portion overlapping with the common layer 112 and the light-emitting layer 193. , and has a portion overlapping with the pixel electrode 191 via the common layer 114. The common electrode 115 , a layer used in common by the light receiving element 110 and the light emitting element 190.

[0221] In the display panel of this embodiment, an organic compound is used for the active layer 113 of the light receiving element 110. The light receiving element 110 has layers other than the active layer 113 that share a structure with the light emitting element 190 (EL element). Therefore, in the manufacturing process of the light emitting device 190, the active layer 113 can be formed. By simply adding a step of forming the light-emitting element 190, the light-receiving element 110 can be formed in parallel with the formation of the light-emitting element 190. Furthermore, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Therefore, the light receiving element 110 can be incorporated into the display panel without significantly increasing the number of manufacturing steps. It can be stored.

[0222] In the display panel 100A, the active layer 113 of the light receiving element 110 and the light emitting layer 190 193 and 194 are made separately, but the light receiving element 110 and the light emitting element 190 have the same configuration. However, the configuration of the light receiving element 110 and the light emitting element 190 is not limited to this. The element 110 and the light emitting element 190 are fabricated separately from each other in addition to the active layer 113 and the light emitting layer 193. (See display panels 100D, 100E, and 100F described later.) The element 110 and the light emitting element 190 may have one or more layers that are used in common (common layers). This is preferable. It is possible to provide the light receiving element 110 on the display panel without significantly increasing the manufacturing process. can be built in.

[0223] The display panel 100A includes a pair of substrates (substrate 151 and substrate 152) and a light receiving element 11 disposed between them. 0, a light-emitting element 190, a transistor 131, a transistor 132, and the like.

[0224] In the light receiving element 110, the pixel electrodes 111 and the common electrode 115 are located between the pixel electrodes 111 and the common electrode 115. The common layer 112, the active layer 113, and the common layer 114 are called organic layers (layers containing organic compounds). It is preferable that the pixel electrode 111 has a function of reflecting visible light. The end of the electrode 111 is covered by a partition wall 216. The common electrode 115 is transparent to visible light. It has the function of

[0225] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is 152 receives the light 122 incident from the outside and converts it into an electrical signal. He is a child.

[0226] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping the optical element 110 and the light-emitting element 190. By providing this, the range in which the light receiving element 110 detects light can be controlled.

[0227] The light-shielding layer BM can be made of a material that blocks light emitted from the light-emitting element. It is preferable that M absorbs visible light. The light-shielding layer BM is made of, for example, a metal material or Black matrix is ​​created using resin materials containing pigments (carbon black, etc.) or dyes. The light-shielding layer BM can be formed with a red color filter, a green color filter, and a The transparent electrode may have a laminated structure of a transparent electrode and a blue color filter.

[0228] Here, a part of the light emitted from the light emitting element 190 is reflected within the display panel 100A and The light blocking layer BM suppresses the influence of such stray light. For example, if the light-shielding layer BM is not provided, the light emitted by the light-emitting element 190 The reflected light 123a is reflected by the substrate 152, and the reflected light 123b is incident on the light receiving element 110. By providing the light-shielding layer BM, the reflected light 123b is prevented from entering the light-receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110. It is possible.

[0229] In the light-emitting element 190, the pixel electrode 191 and the common electrode 115 are located between the pixel electrode 191 and the common electrode 115. The common layer 112, the light-emitting layer 193, and the common layer 114 can also be called an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The pixel electrode 111 and the pixel electrode 191 are covered by the partition wall 216. They are electrically insulated from each other. The common electrode 115 has a function of transmitting visible light.

[0230] The light emitting element 190 has a function of emitting visible light. By applying a voltage between the element electrode 191 and the common electrode 115, light 121 is emitted to the substrate 152 side. It is an electroluminescent element that emits light.

[0231] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving region of the light-receiving element 110. This can prevent the light emitting layer 193 from absorbing the light 122, and This allows for a larger amount of light to be irradiated onto the target object.

[0232] The pixel electrode 111 is connected to the transistor 131 via an opening provided in the insulating layer 214. The edge of the pixel electrode 111 is electrically connected to the source or drain of the pixel electrode 111. is covered by

[0233] The pixel electrode 191 is connected to the transistor 132 via an opening provided in the insulating layer 214. The edge of the pixel electrode 191 is electrically connected to the source or drain of the pixel electrode 191. The transistor 132 has the function of controlling the driving of the light emitting element 190. Has.

[0234] The transistor 131 and the transistor 132 are formed on the same layer (substrate 15 in FIG. 16(A)). It is in contact with the top surface of 1).

[0235] At least a part of the circuit electrically connected to the light receiving element 110 is electrically connected to the light emitting element 190. It is preferable that the circuit is formed from the same material and in the same process as the circuit to which it is electrically connected. This allows the thickness of the display panel to be thinner than when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0236] The light receiving element 110 and the light emitting element 190 are each covered with a protective layer 195. In FIG. 16(A), the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, impurities such as water are prevented from entering the light receiving element 110 and the light emitting element 190. This can prevent the intrusion of dust particles, thereby improving the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. .

[0237] As shown in FIG. 17(A), a protective layer is formed on the light receiving element 110 and the light emitting element 190. In FIG. 17A, the common electrode 115 and the substrate are bonded together by the adhesive layer 142. The plate 152 is bonded to the substrate.

[0238] Also, as shown in FIG. 17(B), a configuration without the light-shielding layer BM may be used. This allows the light receiving area of ​​the light receiving element 110 to be increased, thereby further increasing the sensitivity of the sensor. Cut.

[0239] [Configuration Example 2-2] FIG. 16B shows a cross-sectional view of the display panel 100B. In this case, the description of the same configuration as the display panel described above may be omitted.

[0240] The display panel 100B shown in FIG. 16B has the same configuration as the display panel 100A, but also has a lens. It has 149.

[0241] The lens 149 is provided at a position overlapping the light receiving element 110. Display panel 100B In the display panel 100B, the lens 149 is provided in contact with the substrate 152. The lens 149 is a convex lens having a convex surface on the substrate 151 side. A convex lens having a surface may be disposed in the area overlapping with the light receiving element 110.

[0242] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation 16B shows an example in which the lens 149 is formed first, but the light-shielding layer BM In FIG. 16(B), the edge of the lens 149 is covered with the light-shielding layer BM. It is said that.

[0243] The display panel 100B has a structure in which light 122 is incident on the light receiving element 110 via a lens 149. When the lens 149 is provided, the light receiving element 1 is more easily illuminated than when the lens 149 is not provided. This increases the amount of light 122 incident on the light receiving element 110. Sensitivity can be increased.

[0244] The method for forming the lenses used in the display panel of this embodiment is to form the lenses on the substrate or on the light receiving element. A lens such as a microlens may be formed directly on the substrate, or a separately manufactured microlens may be formed on the substrate. A lens array such as a lens array may be attached to the substrate.

[0245] [Configuration Example 2-3] FIG. 16C is a schematic cross-sectional view of the display panel 100C. The plate 151, the substrate 152, and the partition wall 216 are not included, and the substrate 153, the substrate 154, and the adhesive layer 15 5, the display panel 100 differs from the display panel 100A in that it has an insulating layer 212 and a partition wall 217.

[0246] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are bonded together by adhesive layer 142.

[0247] The display panel 100C includes an insulating layer 212, a transistor 131, and a The transistor 132, the light receiving element 110, the light emitting element 190, etc. are transferred onto the substrate 153. The substrate 153 and the substrate 154 are each made of flexible material. This makes it possible to improve the flexibility of the display panel 100C. For example, it is preferable to use a resin for the substrate 153 and the substrate 154, respectively.

[0248] The substrates 153 and 154 are made of polyethylene terephthalate (PET). ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate Polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose One or both of the substrate 153 and the substrate 154 may be made of a material such as silicon nanofiber. Alternatively, glass having a thickness sufficient to provide flexibility may be used.

[0249] A film having high optical isotropy may be used for the substrate of the display panel of this embodiment. Triacetyl cellulose (TAC, cellulose acetate) is an example of a film with high optical isotropy. (also called triacetate) film, cycloolefin polymer (COP) film, Examples include chloroolefin copolymer (COC) film and acrylic film.

[0250] The partition 217 preferably absorbs light emitted from the light emitting element. For example, a black matrix can be formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 217 can be formed of a colored insulating layer. It is possible.

[0251] When the partition wall 217 is made of a material that transmits the light emitted by the light emitting element 190, The light 123c emitted by the substrate 154 and the partition wall 217 is reflected by the substrate 154 and the partition wall 217, and the reflected light 123d is received. The light 123c may be incident on the element 110. The light 123c may also be transmitted through the partition wall 217 and incident on the transistor. When the light is reflected by a capacitor or wiring, the reflected light may be incident on the light receiving element 110. The light 123c is absorbed by the wall 217, and the reflected light 123d enters the light receiving element 110. This reduces noise and improves the sensor performance using the light receiving element 110. The sensitivity can be increased.

[0252] The partition wall 217 preferably absorbs at least the wavelength of light detected by the light receiving element 110. For example, when the light receiving element 110 detects red light emitted by the light emitting element 190, It is preferable that the partition wall 217 absorbs at least red light. The color filter 123b absorbs red light 123c and reflects red light 123d. can be prevented from being incident on the light receiving element 110.

[0253] [Configuration Example 2-4] In the above example, the light emitting element and the light receiving element have two common layers. However, this is not limiting. Below, we will explain an example in which the common layer has a different configuration.

[0254] FIG. 18A is a schematic cross-sectional view of the display panel 100D. The display panel does not have the through layer 114 but has the buffer layer 184 and the buffer layer 194. 100A. The buffer layer 184 and the buffer layer 194 each have a single layer structure. It may have a laminated structure.

[0255] In the display panel 100D, the light receiving element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, and a The display panel 100 includes a conductive layer 113, a buffer layer 184, and a common electrode 115. In FIG. 1D, the light emitting element 190 includes a pixel electrode 191, a common layer 112, a light emitting layer 193, a buffer layer 194, and a light emitting layer 195. The layer 194 and the common electrode 115 are provided.

[0256] In the display panel 100D, the buffer layer 184 between the common electrode 115 and the active layer 113 1 shows an example in which the buffer layer 194 between the common electrode 115 and the light-emitting layer 193 is separately formed. The buffer layer 184 and the buffer layer 194 may be, for example, one of an electron injection layer and an electron transport layer. Either or both can be formed.

[0257] FIG. 18B is a schematic cross-sectional view of the display panel 100E. The display panel does not have the through layer 112 but has the buffer layer 182 and the buffer layer 192. 100A. The buffer layer 182 and the buffer layer 192 each have a single-layer structure. It may have a laminated structure.

[0258] In the display panel 100E, the light receiving element 110 includes a pixel electrode 111, a buffer layer 182, and a , an active layer 113, a common layer 114, and a common electrode 115. The display panel 100 In E, the light emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light emitting layer 193, and a common electrode 194. It has a through layer 114 and a common electrode 115 .

[0259] In the display panel 100E, the buffer layer 182 between the pixel electrode 111 and the active layer 113 1 shows an example in which the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 is separately formed. The buffer layer 182 and the buffer layer 192 may be, for example, a hole injection layer and a hole transport layer. Either or both can be formed.

[0260] FIG. 18C is a schematic cross-sectional view of the display panel 100F. The buffer layer 182, the buffer layer 184, and the buffer layer 186 are not provided. The display panel 100 differs from the display panel 100A in that it includes a layer 192 and a buffer layer 194.

[0261] In the display panel 100F, the light receiving element 110 includes a pixel electrode 111, a buffer layer 182, and a , an active layer 113, a buffer layer 184, and a common electrode 115. 00F, the light emitting element 190 includes a pixel electrode 191, a buffer layer 192, and a light emitting layer 193. , a buffer layer 194 , and a common electrode 115 .

[0262] In the manufacture of the light receiving element 110 and the light emitting element 190, the active layer 113 and the light emitting layer 193 are formed. Not only can you separate it, but you can also create other layers.

[0263] In the display panel 100F, the light receiving element 110 and the light emitting element 190 form a pair of electrodes (pixel electrodes). 1 shows an example in which there is no common layer between the electrode 111 or pixel electrode 191 and the common electrode 115. The light receiving element 110 and the light emitting element 190 of the display panel 100F are formed on the insulating layer 214. The element electrode 111 and the pixel electrode 191 are formed using the same material and in the same process. The buffer layer 182, the active layer 113, and the buffer layer 184 are disposed on the pixel electrode 191. After forming the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, The common electrode 115 is formed to cover the photoresist layer 184 and the buffer layer 194. can.

[0264] The stacked structure of the buffer layer 182, the active layer 113, and the buffer layer 184 and the buffer The order of forming the laminated structure of the light emitting layer 192, the light emitting layer 193, and the buffer layer 194 is not particularly limited. For example, after the buffer layer 182, the active layer 113, and the buffer layer 184 are formed, The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed. Before the deposition of the photoresist layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192 , a light-emitting layer 193, and a buffer layer 194 may be formed. The buffer layer 192, the active layer 113, the light-emitting layer 193, etc. may be deposited alternately in this order.

[0265] [Display panel configuration example 3] A more specific example of the configuration of the display panel will be described below.

[0266] [Configuration Example 3-1] FIG. 19 shows a perspective view of the display panel 200A.

[0267] The display panel 200A has a structure in which a substrate 151 and a substrate 152 are bonded together. 9, the substrate 152 is shown in dashed lines.

[0268] The display panel 200A includes a display unit 162, a circuit 164, wiring 165, etc. 1 is an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display panel 200A. Therefore, the configuration shown in FIG. 19 includes the display panel 200A, the IC, and the FPC. It can also be called a display module having the above.

[0269] The circuit 164 can be a scanning line driver circuit.

[0270] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164 . The signal and power are input from the outside via FPC172 or from IC173. The signal is input to wiring 165.

[0271] In Figure 19, the COG (Chip On Glass) method or COF (Chip On In this example, an IC 173 is mounted on a substrate 151 using a method such as an IC Film. C173 can be applied to an IC having, for example, a scanning line driving circuit and a signal line driving circuit. The display panel 200A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0272] FIG. 20 shows a part of the area including the FPC 172 of the display panel 200A shown in FIG. A part of the area including the path 164, a part of the area including the display unit 162, and a part of the area including the end 1 shows an example of a cross section when each part is cut.

[0273] The display panel 200A shown in FIG. 20 has a transistor 2 between a substrate 151 and a substrate 152. 01, transistor 205, transistor 206, light emitting element 190, light receiving element 110, etc. Has.

[0274] The substrate 152 and the insulating layer 214 are bonded together via an adhesive layer 142. A solid sealing structure or a hollow sealing structure can be applied to seal the light receiving element 110. In this example, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is inactive. It is filled with gas (nitrogen, argon, etc.) and has a hollow sealing structure. The substrate 152 and the adhesive layer 142 may be provided overlapping the light emitting element 190. The space 143 surrounded by the insulating layer 214 is filled with a resin different from that of the adhesive layer 142. That's fine.

[0275] The light emitting element 190 is made up of a pixel electrode 191, a common layer 112, and a light emitting layer 193 from the insulating layer 214 side. , a common layer 114, and a common electrode 115 are laminated in this order. 1 is connected to the conductive layer 22 of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The edge of the pixel electrode 191 is covered with a partition wall 216. The common electrode 115 comprises a material that reflects visible light, and the common electrode 115 comprises a material that transmits visible light.

[0276] The light receiving element 110 is made up of a pixel electrode 111, a common layer 112, an active layer 113, and a common layer 114. The pixel electrode 11 has a laminated structure in which the pixel electrode 11, the common layer 114, and the common electrode 115 are laminated in this order. 1 is connected to the conductive layer 22 of the transistor 205 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered with a partition wall 216. The pixel electrode 111 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. Contains materials that

[0277] The light emitted by the light emitting element 190 is emitted to the substrate 152 side. The light is incident on the substrate 152 through the space 143. The substrate 152 has a It is preferable to use a material that is highly transparent.

[0278] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting element 110. The light receiving element 110 and the light emitting element 190 are both formed of an active layer 113 and a light emitting layer. The structure of the layer 193 is different, but the other components can be the same. The light receiving element 110 can be built into the display panel 200A without significantly increasing the manufacturing cost. do.

[0279] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping the optical element 110 and the light-emitting element 190. By providing the shielding member, it is possible to control the range in which the light receiving element 110 detects light. By providing the optical layer BM, light from the light emitting element 190 is allowed to directly enter the light receiving element 110. Therefore, a sensor with low noise and high sensitivity can be realized.

[0280] The transistor 201, the transistor 205, and the transistor 206 are all substrate These transistors are formed on the same substrate 151 using the same material and process. It can be made.

[0281] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. The insulating layer 213 has a portion that functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The gate insulating layer is formed to cover the gate electrode and has a function as a planarization layer. The number of insulating layers covering the transistor is not limited, and each may be a single layer or two or more layers. .

[0282] At least one insulating layer covering the transistor is designed to prevent impurities such as water and hydrogen from diffusing. It is preferable to use a material that can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0283] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Also, hafnium oxide film, yttrium oxide film, zirconium oxide film, etc. can be used. um oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, oxide A cerium film, a neodymium oxide film, or the like may also be used. It may also be used.

[0284] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The organic insulating film preferably has an opening near the edge of the display panel 200A. In addition, the diffusion of impurities from the end of the display panel 200A through the organic insulating film is suppressed. Alternatively, the edge of the organic insulating film may be positioned inside the edge of the display panel 200A. The organic insulating film is formed so as to prevent the organic insulating film from being exposed at the edge of the display panel 200A. It can also be set to

[0285] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, amide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenone Examples of the resin include olefin resins and precursors of these resins.

[0286] In the region 228 shown in FIG. 20, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the insulating layer 214, the display unit Therefore, the reliability of the display panel 200A can be improved. can be increased.

[0287] The transistors 201, 205, and 206 have gates a conductive layer 221 that functions as a gate insulating layer, an insulating layer 211 that functions as a gate insulating layer, a source and a drain the conductive layers 222a and 222b, which function as a gate insulating layer; the semiconductor layer 231; The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. The same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is It is located between the conductive layer 223 and the semiconductor layer 231 .

[0288] The structure of the transistor included in the display panel of this embodiment is not particularly limited. Planar type transistors, staggered type transistors, inverted staggered type transistors, etc. In addition, either a top-gate or bottom-gate transistor can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. It's fine.

[0289] The transistor 201, the transistor 205, and the transistor 206 have channels The structure in which the semiconductor layer is sandwiched between two gates is applied. and drive the transistors by supplying the same signal to them. A potential for controlling the threshold voltage is applied to one of the two gates, and a potential for driving the other is applied to the other. The threshold voltage of the transistor may be controlled by applying a potential of the above formula.

[0290] The crystallinity of the semiconductor material used in the transistor is not particularly limited. Single crystal semiconductors or semiconductors with crystallinity other than single crystal (microcrystalline semiconductors, polycrystalline semiconductors) A single-crystal semiconductor or a semiconductor having a crystalline region in part may be used. It is preferable to use a crystalline semiconductor because it can suppress deterioration of transistor characteristics.

[0291] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. For example, amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.) etc.)

[0292] The semiconductor layer may be, for example, a layer of indium and M (where M is gallium, aluminum, silicon, Boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium Rumanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and Preferably, the metal oxide is one or more selected from tin.

[0293] In particular, the semiconductor layer is made of indium (In), gallium (Ga), and zinc (Zn). It is preferable to use an oxide containing IGZO (also referred to as IGZO).

[0294] When the semiconductor layer is an In-M-Zn oxide, the The sputtering target preferably has an atomic ratio of In to M of 1 or more. The atomic ratio of the metal elements in such a sputtering target is In:M:Zn. =1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In: M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1 , In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1 :7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, In:M:Zn=5 :2:5 etc.

[0295] When a target containing polycrystalline oxide is used as a sputtering target, This is preferable because it is easy to form a semiconductor layer having crystallinity. The atomic ratio is the plus or minus of the atomic ratio of the metal elements contained in the sputtering target. For example, the composition of the sputtering target used for the semiconductor layer is When the atomic ratio is In:Ga:Zn=4:2:4.1, the composition of the semiconductor layer to be formed is: The atomic ratio may be close to In:Ga:Zn=4:2:3.

[0296] When the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity, it means In When Ga is 4, this includes the case where Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. In addition, when describing that the atomic ratio is In:Ga:Zn=5:1:6 or in the vicinity, When n is 5, Ga is greater than 0.1 and less than or equal to 2, and Zn is greater than or equal to 5 and less than or equal to 7. It also includes cases where the atomic ratio is In:Ga:Zn=1:1:1 or in the vicinity. When mounting, when In is 1, Ga is greater than 0.1 and not more than 2, and Zn is 0. Includes cases where the value is greater than 1 and less than or equal to 2.

[0297] The transistors included in the circuit 164 and the transistors included in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0298] A connecting portion 204 is provided in the area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is made of the same conductive film as the pixel electrode 191. The conductive layer 166 thus obtained is exposed. Electrical connection can be made via the connection layer 242 .

[0299] Various optical members can be arranged on the outside of the substrate 152. Examples include a plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, a water-repellent film that makes the surface resistant to scratches, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0300] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, Resin or the like can be used. The substrate 151 and the substrate 152 are made of a flexible material. This can increase the flexibility of the display panel.

[0301] The adhesive layers 142 and 155 may be formed of a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, or the like. Various curing adhesives such as curing adhesives, thermosetting adhesives, and anaerobic adhesives can be used. These adhesives include epoxy resin, acrylic resin, silicone resin, and phenolic resin. , polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl vinyl butyral resin, EVA (ethylene vinyl acetate) resin, etc. A material with low moisture permeability such as epoxy resin is preferred. Two-component resin may also be used. An adhesive sheet or the like may also be used.

[0302] The connection layer 242 is made of an anisotropic conductive film (ACF). Conductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0303] The light emitting element 190 may be a top emission type, a bottom emission type, a dual emission type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. It is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0304] The light-emitting element 190 has at least a light-emitting layer 193. As the other layers, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, an electrode A material with high electron transport properties, a material with high electron injection properties, or a bipolar material (electron transport properties and For example, the common layer 112 may further include a layer containing a material having a high hole transporting property. It is preferable that the layer has one or both of a hole injection layer and a hole transport layer. For example, The layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0305] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular compounds and high-molecular compounds. The common layer 112 and the light-emitting layer may be made of any of these materials, and may contain inorganic compounds. The layers constituting the common layer 114 and the layer 193 are formed by deposition (including vacuum deposition), transfer, respectively. The layer can be formed by a method such as a copying method, a printing method, an ink jet method, or a coating method.

[0306] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0307] The active layer 113 of the light receiving element 110 includes a semiconductor, such as silicon. and organic semiconductors containing organic compounds. An example in which an organic semiconductor is used as the semiconductor in the conductive layer will be shown below. The light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 are formed by the same method (for example, For example, it can be formed by a vacuum deposition method, which is preferable because it allows the use of common manufacturing equipment.

[0308] The active layer 113 has an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of suitable organic semiconductor materials include electron-accepting organic semiconductor materials such as fullerene derivatives. It has a soccer ball-like shape, which is energetically stable. has deep (low) HOMO and LUMO levels. Because of its deep structure, it has extremely high electron-accepting properties. When the π-electron conjugation (resonance) spreads across the surface, the electron donating property (donor property) increases. Because of its spherical shape, the electron-accepting property is high even though the π electrons are widely spread. High electron acceptance allows charge separation to occur quickly and efficiently, making it an effective light-receiving device. It is beneficial. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to the above.

[0309] The active layer 113 may be made of an n-type semiconductor material such as a metal complex having a quinoline skeleton. metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, thiazolidinyl compounds, metal complexes having an oxadiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazoline azole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, Lysine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. can be done.

[0310] The p-type semiconductor material of the active layer 113 is copper (II) phthalocyanine (Cop per(II) phthalocyanine (CuPc), tetraphenyldibenzo Periflanthene (Tetraphenyldibenzoperiflanthene; DBP), Zinc Phthalocyanine (ZnPc) Examples of electron-donating organic semiconductor materials include tin phthalocyanine (SnPc) and quinacridone. It can be obtained.

[0311] In addition, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Compounds with an aromatic amine skeleton and conductors are also listed. Examples of such derivatives include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, Fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, Indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazo derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, chiral derivatives, Nacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyphenylene derivatives Examples include fluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives. .

[0312] For example, the active layer 113 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 113 may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0313] In addition to the gate, source and drain of the transistor, various wiring and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and the like. , nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples of such materials include metals such as stainless steel and alloys that contain such metals as the main component. The film containing the material can be used as a single layer or as a laminate structure.

[0314] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as iron, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, a nitride of the metal material (e.g., a nitride of the metal material) can be used. For example, titanium nitride) may be used. When using a material such as a fluoride, it is preferable to make it thin enough to have light-transmitting properties. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of tin oxide or the like, since the conductivity can be increased. These include conductive layers such as various wirings and electrodes that make up the display panel, and conductive layers of the display elements. The conductive layer can also be used as a pixel electrode or a common electrode.

[0315] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as oils, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, acid Examples of suitable insulating materials include inorganic insulating materials such as aluminum oxide.

[0316] [Configuration Example 3-2] 21A shows a cross-sectional view of the display panel 200B. The difference from the display panel 200A is mainly in that the display panel 200A has a protective layer 149 and a protective layer 195.

[0317] By providing a protective layer 195 that covers the light receiving element 110 and the light emitting element 190, The diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 is suppressed. The reliability of the optical element 190 can be improved.

[0318] In a region 228 near the edge of the display panel 200B, through an opening in the insulating layer 214, It is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from diffusing from the outside into the display section 162 via the organic insulating film. This makes it possible to improve the reliability of the display panel 200B.

[0319] FIG. 21(B) shows an example in which the protective layer 195 has a three-layer structure. The protective layer 195 is made up of an inorganic insulating layer 195a on the common electrode 115 and an organic insulating layer 195b on the inorganic insulating layer 195a. It has an insulating layer 195b and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0320] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c are aligned with the end of the organic insulating layer 195b. The inorganic insulating layer 195a extends outward from the insulating layer 214 and is in contact with the insulating layer 214. The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening in the insulating layer 215 (organic insulating layer). The edge layer 215 and the protective layer 195 can surround the light receiving element 110 and the light emitting element 190. Therefore, the reliability of the light receiving element 110 and the light emitting element 190 can be improved.

[0321] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film. .

[0322] A lens 149 is provided on the surface of the substrate 152 facing the substrate 151. The lens 149 is The light receiving area of ​​the light receiving element 110 overlaps with the lens 149, and the light receiving area of ​​the light receiving element 110 overlaps with the lens 149. In addition, it is preferable that the light-receiving element 110 does not overlap with the light-emitting layer 193. This can increase the sensitivity and accuracy of the sensor.

[0323] The lens 149 has a refractive index of 1.3 or more and 2.5 or less for the wavelength of light received by the light receiving element 110. The lens 149 is preferably made of at least one of an inorganic material and an organic material. For example, the lens 149 can be formed using a material containing resin. In addition, by using a material containing at least one of oxide and sulfide for the lens 149, This can be done.

[0324] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, Resin containing sulfur, resin containing sulfur, etc. can be used for the lens 149. A material containing nanoparticles of a material with a higher refractive index than the resin can be used for the lens 149. Titanium oxide or zirconium oxide can be used for the nanoparticles.

[0325] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide , tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, indium and tin containing oxide The lens 149 may be made of an oxide containing indium, gallium, and zinc, or an oxide containing indium, gallium, and zinc. Alternatively, zinc sulfide or the like can be used for the lens 149.

[0326] In the display panel 200B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 overlaps the light receiving element 110 and the light emitting element 190. The display panel 200B is provided with a solid sealing structure.

[0327] [Configuration Example 3-3] FIG. 22A shows a cross-sectional view of the display panel 200C. The difference is mainly in the structure of the display panel, in that it does not have a light-shielding layer BM and a lens 149. It differs from 200B.

[0328] The display panel 200C includes a transistor 208, a transistor 209, and a and a transistor 210.

[0329] The transistors 208, 209, and 210 have gates a conductive layer 221 that functions as a gate insulating layer, an insulating layer 211 that functions as a gate insulating layer, a channel forming region 2 31i and a semiconductor layer having a pair of low resistance regions 231n, one of the pair of low resistance regions 231n the conductive layer 222a connected to one of the pair of low resistance regions 231n, and the conductive layer 222b connected to the other of the pair of low resistance regions 231n. b, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and The insulating layer 211 is formed between the conductive layer 221 and the channel. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i. It is located between the area 231i.

[0330] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening. One of 2b functions as a source and the other functions as a drain.

[0331] The pixel electrode 191 of the light emitting element 190 is connected to one side of the transistor 208 via the conductive layer 222b. It is electrically connected to one of the pair of low resistance regions 231n.

[0332] The pixel electrode 111 of the light receiving element 110 is connected to one side of the transistor 209 via the conductive layer 222b. It is electrically connected to the other of the pair of low resistance regions 231n.

[0333] FIG. 22A shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer. On the other hand, in FIG. 22B, the insulating layer 225 is formed between the channel forming region 231i of the semiconductor layer 231 and the For example, the conductive layer 223 may be formed by By processing the insulating layer 225 using the mask, the structure shown in FIG. 22(B) can be fabricated. In FIG. 22B, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223. Through the openings in the insulating layer 215, the conductive layer 222a and the conductive layer 222b are respectively formed as low resistance regions. 231n. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0334] [Configuration Example 3-4] FIG. 23 shows a cross-sectional view of the display panel 200D. The display panel 200D has a substrate structure The main difference is with the display panel 200C.

[0335] The display panel 200D does not have the substrate 151 and the substrate 152, but has the substrates 153 and 154. , adhesive layer 155, and insulating layer 212.

[0336] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are bonded together by adhesive layer 142.

[0337] The display panel 200D includes an insulating layer 212, a transistor 208, and a The transistor 209, the light receiving element 110, the light emitting element 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are each made of flexible material. This makes it possible to improve the flexibility of the display panel 200D.

[0338] The insulating layer 212 can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. Alternatively, the insulating layer 212 may be a combination of an organic insulating film and an inorganic insulating film. In this case, the film on the transistor 209 side is an inorganic insulating film. It is preferable that

[0339] The above is a description of an example of the configuration of the display panel.

[0340] [About metal oxides] Metal oxides applicable to the semiconductor layer will be described below.

[0341] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal ox). Metal oxides containing nitrogen are sometimes collectively called metal oxynitrides (metal oxynitrides). For example, zinc oxynitride (ZnON) Nitrogen-containing metal oxides such as the above may be used for the semiconductor layer.

[0342] In this specification, CAAC (c-axis aligned crystal) l), and when written as CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. .

[0343] For example, the semiconductor layer uses CAC (Cloud-Aligned Composite) OS (Oxide Semiconductor) can be used.

[0344] CAC-OS or CAC-metal oxide is a material that has a conductive function in some parts. The material has insulating properties in some parts and semiconducting properties in the whole material. Note that CAC-OS or CAC-metal oxide is used as the semiconductor of a transistor. When used in a dielectric layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary, the switching function (On / Off) This function (which turns off the power supply) is given to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0345] In addition, CAC-OS or CAC-metal oxide is a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a bell. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0346] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than 1 m.

[0347] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide-gap component due to the insulating region and a conductive component due to the conductive region. In this configuration, when carriers flow, In addition, carriers mainly flow in the narrow gap component. The component with a narrow gap acts complementary to the component with a wide gap. Carriers also flow into the wide-gap component in conjunction with the component that has a wide gap. CAC-OS or CAC-metal oxide is used as the channel formation region of the transistor. When used in a transistor, it has a high current driving force in the on-state, i.e., a large on-current. , and high field-effect mobility can be obtained.

[0348] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a matrix composite.

[0349] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (c- axis aligned crystalline oxide semiconductor ctor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline ox ide semiconductor), pseudo-amorphous oxide semiconductor (a-like OS : amorphous-like oxide semiconductor), and non crystalline oxide semiconductors.

[0350] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure is distorted by the connection of multiple nanocrystals. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. This refers to the point where the direction of the

[0351] Nanocrystals are basically hexagonal, but are not limited to regular hexagonal shapes. They may also have non-regular hexagonal shapes. In addition, the distortion may have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the lattice distortion. This is because the CAAC-OS has a crystalline structure in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms is shortened by the substitution of metal elements. This is because distortion can be tolerated by changing the frequency.

[0352] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure consisting of layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer). (also called layer structure). Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer Also, when indium in the In layer is substituted with element M, (In,M) It can also be expressed as a layer.

[0353] CAAC-OS is a highly crystalline metal oxide. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS should be free from impurities and defects (oxygen vacancies (V O :oxygen v It can also be called a metal oxide with low acancy. Metal oxides with CAAC-OS have stable physical properties. The metal oxides used are heat resistant and highly reliable.

[0354] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 10 nm). The atomic arrangement is periodic in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS may be classified as a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the body.

[0355] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is used. The IGZO nanocrystals mentioned above are stable. In particular, IGZO tends to have difficulty growing crystals in the atmosphere, Small crystals (e.g., crystals of a few mm or a few cm) are more likely to be formed than large crystals (here, crystals of a few mm or a few cm). , the nanocrystals mentioned above) may be structurally more stable.

[0356] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has pores or low density regions. The ke-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0357] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention may be an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-li The ke-OS, nc-OS, and CAAC-OS may have two or more of them.

[0358] The metal oxide film that functions as a semiconductor layer is heated with either an inert gas or oxygen gas, or The metal oxide film can be formed by using both of the oxygen flow rate and the oxygen flow rate. There is no particular limitation on the ratio (oxygen partial pressure). However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is 0% or more. Preferably, it is 30% or less, more preferably 5% to 30% or less, and even more preferably 7% to 15% or less. Preferred.

[0359] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the electron energy is 3 eV or more, and even more preferable that the electron energy is 3 eV or more. The off-state current of a transistor is reduced by using a metal oxide with a wide energy gap. It is possible.

[0360] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. The temperature is more preferably from room temperature to 130° C., and even more preferably from room temperature to 130° C. The temperature is preferably room temperature, as this can increase productivity.

[0361] The metal oxide film can be formed by sputtering. The LD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0362] This concludes the explanation of metal oxides.

[0363] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0364] (Embodiment 3) In this embodiment, an electronic device which is one embodiment of a composite device of one embodiment of the present invention will be described. This will be explained using FIGS. 24 to 26.

[0365] The electronic devices of this embodiment include the display device of one embodiment of the present invention. It has the function of displaying the biometric information, so it can be used for biometric authentication on the display and by touch or near touch. The electronic device according to one embodiment of the present invention is difficult to be tampered with and has high security. It is an electronic device with an extremely high level of reliability. It also improves the functionality and convenience of electronic devices. It is possible.

[0366] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information Examples include terminals, sound reproduction devices, etc.

[0367] The electronic device of this embodiment is a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, , distance, light, liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared radiation) It may be possible.

[0368] The electronic device of this embodiment can have various functions. For example, various information ( Still images, videos, text images, etc.) on the display, touch panel function, calendar It has the functions of displaying the date, time, etc., and running various software (programs). functions, wireless communication functions, and functions to read programs or data recorded on recording media. They may have abilities, etc.

[0369] The electronic device 6500 shown in FIG. 24(A) is a mobile phone that can be used as a smartphone. It is a mobile information terminal.

[0370] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, and a 504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0371] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0372] FIG. 24B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0373] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. The space surrounded by the protective member 6510 is provided with a display panel 6511, an optical member 6512, a tab The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. do.

[0374] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The flannel 6513 is fixed by an adhesive layer (not shown).

[0375] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. IC6516 is mounted on the FPC6515, which is mounted on the printed circuit board 6517. is connected to the terminal.

[0376] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. This allows for extremely lightweight electronic devices. It is extremely thin, so it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back and an FPC 6515 can be attached to the back of the pixel area. By arranging the connection part with the substrate, an electronic device with a narrow frame can be realized.

[0377] FIG. 25A shows an example of a television device. The television device 7100 has a housing 7 The display unit 7000 is built into the housing 101. 101 is shown as a supported configuration.

[0378] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0379] The television device 7100 shown in FIG. 25A is operated by an operation switch provided in the housing 7101. This can be done by a separate remote control 7111 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the application device 7100. The remote control 7111 may have a display unit that displays information output from the remote control 7111. You can control the channel and volume using the operation keys or touch panel provided on the By doing so, it is possible to operate the image displayed on the display unit 7000.

[0380] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. By connecting to a wireless communication network, it can be transmitted in one direction (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0381] An example of a notebook personal computer is shown in FIG. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device The housing 7211 has a display unit 7000 and an external connection port 7213. It is included.

[0382] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0383] 25(C) and 25(D) show examples of digital signage.

[0384] The digital signage 7300 shown in FIG. 25C includes a housing 7301, a display unit 7000, and a speaker 7303. In addition, LED lamps, operation keys (power switch, It may have a variety of functions, including a control switch, connection terminals, various sensors, a microphone, etc. Cut.

[0385] FIG. 25(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 is a display unit 700 provided along the curved surface of a pillar 7401. 0.

[0386] 25C and 25D, the display device of one embodiment of the present invention is included in the display portion 7000. The position can be applied.

[0387] The larger the display unit 7000, the more information can be displayed at once. The wider the display unit 7000, the more easily it will be noticed by people, which can increase the effectiveness of advertising, for example. can.

[0388] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is not only a display but also allows users to operate it intuitively, which is desirable. When used to provide information such as road traffic information, intuitive operation is required. This can further improve usability.

[0389] Also, as shown in FIG. 25(C) and FIG. 25(D), the digital signage 7300 The Digital Signage 7400 is a system that displays information on smartphones and other information terminals owned by users. It is preferable that the device can be connected to the information terminal 7311 or the information terminal 7411 via wireless communication. For example, the advertisement information displayed on the display unit 7000 may be displayed on the information terminal 7311 or the information terminal It can be displayed on the screen of the information terminal 7311 or the information terminal By operating 7411, the display on the display unit 7000 can be changed.

[0390] In addition, the Digital Signage 7300 or Digital Signage 7400 can be used with an information terminal. 7311 or the screen of the information terminal 7411 is used as a control means (controller) to play the game. This allows an unspecified number of users to participate in the game at the same time and have fun. You can enjoy it.

[0391] The electronic devices shown in FIGS. 26A to 26F include a housing 9000, a display portion 9001, a screen Speaker 9003, operation keys 9005 (including power switch or operation switch), connection Terminal 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance , light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation , including the ability to measure flow, humidity, gradient, vibration, odor or infrared), micro It has the Von 9008, etc.

[0392] The electronic devices shown in FIGS. 26A to 26F have various functions. Function to display various information (still images, videos, text images, etc.) on the display, touch panel function , calendar, date or time display functions, various software (programs) a function to control processing by wireless communication, a program recorded on a recording medium, or The electronic device can have the function of reading and processing data. The electronic device may have a variety of functions, including but not limited to the above. In addition, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external). It has functions such as saving the captured image to a memory card (built-in to the camera or the internal memory) and displaying the captured image on the display. It may be possible.

[0393] The electronic devices shown in FIGS. 26A to 26F will be described in detail below.

[0394] 26(A) is a perspective view showing a mobile information terminal 9101. For example, the mobile information terminal 9101 can be used as a smartphone. A speaker 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. An example of displaying three icons 9050 is shown in the figure. 051 can also be displayed on another surface of the display unit 9001. An example of the information 9051 is , notifications of incoming emails, SNS, phone calls, etc., subject of emails and SNS, sender Name, date and time, remaining battery power, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where the number 1 is displayed.

[0395] 26(B) is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 is , and has the function of displaying information on three or more surfaces of the display unit 9001. An example is shown in which information 9053 and information 9054 are displayed on different surfaces. The user holds the mobile information terminal 9102 in the breast pocket of his / her clothes. You can also check the information 9053 displayed in a position that can be observed from above 02. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can, for example, You can decide whether to accept the offer or not.

[0396] 26(C) is a perspective view showing a wristwatch-type mobile information terminal 9200. The display surface of the display device 9001 is curved, and the display can be performed along the curved display surface. In addition, the mobile information terminal 9200 can communicate with, for example, a headset capable of wireless communication. By doing so, hands-free conversation is also possible. The connection terminal 9006 allows data to be transmitted to and from other information terminals and for charging. The charging operation may be performed by wireless power supply.

[0397] 26(D), 26(E), and 26(F) show a foldable portable information terminal 92. 26(D) shows the mobile information terminal 9201 in an unfolded state. Figure 26(F) shows the folded state, and Figure 26(E) shows the state from either Figure 26(D) or Figure 26(F). The portable information terminal 9201 is in a folded state. It is highly portable and has a seamless, wide display area when unfolded, making it easy to see the display. The display unit 9001 of the portable information terminal 9201 is connected by a hinge 9055. The display unit 9001 is supported by three housings 9000. For example, the display unit 9001 has a curvature radius of 0.1 m. It can be bent from 1m to 150mm.

[0398] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Example]

[0399] In this example, a display device according to one embodiment of the present invention was manufactured, and imaging was performed using the display device. The results are shown below.

[0400] [Display device] The display device has a transistor on a glass substrate, and a light-emitting element and a light-receiving element on the transistor. In addition, a protective layer for protecting the light-emitting element and the light-receiving element was formed on the A film containing an organic resin was attached onto the electrode and the light-receiving element via an adhesive layer.

[0401] The transistor uses In-Ga-Zn oxide for the semiconductor layer where the channel is formed. The transistor was a top-gate transistor heated at 500°C on a glass substrate. It was made using a process less than 100 times faster.

[0402] Red (R), green (G), and blue (B) organic EL elements were used as the light-emitting elements. The optical element is a top-emission type, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode share the same buffer layer and common electrode. The light-emitting layer and the active layer were separately formed by vacuum deposition using a metal mask.

[0403] The circuits shown in Figures 4(B) and 7 were used to drive the light-emitting elements. The circuit shown in FIG. 12 was used as the driving circuit.

[0404] The display device we created has a diagonal size of 7.99 inches and a pixel count of 1080 x 21. 60, pixel size is 84 μm × 84 μm, and resolution is 302 ppi. Display gate driver, demultiplexer, sensor scan driver, readout circuit The display source driver, AD conversion circuit, etc. are external.

[0405] [Image capture] The image was taken with the palm of the hand placed on the display surface of the display device. The photoelectric element was used as a light source, and the experiment was carried out while it was emitting light. In contrast, smoothing processing is performed to remove noise and contrast adjustment is performed to improve visibility. Each of the following was carried out.

[0406] Fig. 27(A) shows the captured image. Fig. 27(B) shows the image captured in Fig. 27(A). FIG. 27(C) shows an enlarged image of region P, and FIG. 27(A) shows an enlarged image of region Q. Image shown.

[0407] In addition, in Fig. 27(A), Fig. 27(B), and Fig. 27(C), in order to protect personal information, Some parts have been mosaicked.

[0408] One aspect of the present invention is that the imaging area can be enlarged, and the entire display area can be used as the imaging area. As shown in Figure 27(A), it is possible to capture the palm and the fingertips of each finger in one image. It is possible to capture a clear image.

[0409] In addition, one embodiment of the present invention can increase the pixel density over the entire imaging region (display region). Therefore, whether it is region Q near the center of the imaging area or region P near the edge, as shown in Figure 2 As shown in Figs. 7(C) and 27(B), fingerprints and palm prints can be clearly captured.

[0410] In this way, the display device according to one embodiment of the present invention not only displays an image but also displays a light emitting element (LED) in contact with the display surface. Therefore, the display device is suitable for fingerprint authentication, palm print authentication, and other similar applications. The display device can be suitably used for biometric authentication such as authentication. It can also be used as an extremely thin image scanner. [Explanation of symbols]

[0411] M1 to M8: transistors, C1 to C3: capacitance elements, SL, VL, GL1, GL2, VL 1, VL2, TX, SE, RS, WX: Wiring, PD: Light receiving element, EL: Light emitting element, N1: Nodes 10, 10a to 10e: display devices, 11, 11a, 11b: display units, 12 to 14 : drive circuit section, 15: circuit section, 20, 20a, 21, 21a, 21b, 21c, 30: image Pixels, 21R, 21G, 21B, 21aR, 21aB, 21aG: sub-pixels, 22: imaging pixel

Claims

[Claim 1] a pixel, a first wiring, and a second wiring; the pixel includes first to fourth transistors, a first capacitor, a first insulating layer, a light-emitting element, and a light-receiving element; the light-emitting element has a first electrode, a light-emitting layer, and a common electrode; the light receiving element has a second electrode, an active layer, and the common electrode; the first electrode has a region in contact with an upper surface of the first insulating layer; the second electrode has a region in contact with the top surface of the first insulating layer; one electrode of the light-emitting element is electrically connected to one of the source and drain of the second transistor; one of a source and a drain of the first transistor is electrically connected to the first wiring, and the other is electrically connected to a gate of the second transistor and one electrode of the first capacitor element; one of a source and a drain of the third transistor is electrically connected to the second wiring, and the other of the source and the drain is electrically connected to the other electrode of the first capacitor element and one of the source and the drain of the fourth transistor; the other of the source and the drain of the fourth transistor is electrically connected to one electrode of the light-emitting element.

Images