Display device and method for manufacturing the display device

By forming a metal oxide layer on the opening plate of the MEMS shutter display device, the problems of low contrast and complex manufacturing are solved, the contrast is improved, the process is simplified, and the backlight light is effectively utilized.

CN102778751AInactive Publication Date: 2012-11-14SNAPTRACK INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SNAPTRACK INC
Filing Date
2012-03-20
Publication Date
2012-11-14
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

In display devices using MEMS shutters, it is difficult to effectively improve contrast with existing technology, and the manufacturing process is complicated, which increases material costs.

Method used

By forming a metal oxide layer on the metal layer of the opening plate, it ensures low reflectivity on the shutter side of the MEMS, prevents light scattering, and simplifies the process to reduce levels of different reflectivity, using a highly translucent substrate and silver or silver alloy The metal layer is etched and oxidized to form openings.

Benefits of technology

The contrast of the display device is improved, the manufacturing process is reduced, the material cost is reduced, and the backlight light is effectively used to prevent light scattering, thereby improving the contrast.

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Abstract

The present invention provides a display device and a method for manufacturing the display device. A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
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