Light-emitting device

Abstract

To provide a novel light-emitting device, or a novel light-emitting device of high productivity in which power consumption is reduced.SOLUTION: In a light-emitting device having first through third pixels, the first pixel has a first light-emitting element and a first optical element, the second pixel has a second light-emitting element and a second optical element, and the third pixel has a third light-emitting element, and in first through third light-emitting elements, a first light-emitting layer or a second light-emitting layer is commonly used. And, the first light-emitting layer has a first light-emitting material having a spectral peak in a range being more than or equal to 540 nm and less than or equal to 580 nm, and the second light-emitting layer has a second light-emitting material having a spectral peak in a range being more than or equal to 420 nm and less than or equal to 480 nm.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention is a light-emitting layer that emits light when an electric field is applied between a pair of electrodes. The present invention relates to a light-emitting device, an electronic device, and a lighting device that have a light-emitting element made of the above.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to an article, a method, or a manufacturing method. One aspect of the invention is a process, machine, manufacture, or composition of matter. Therefore, the present invention disclosed in this specification more specifically relates to the In one embodiment, the present invention relates to a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, and the like. As examples, a device, a power storage device, a storage device, a driving method thereof, or a manufacturing method thereof These can be listed as follows. [Background technology]

[0003] The organic compound used as the light-emitting layer has the characteristics of being thin, lightweight, fast response, and driven by low DC voltage. The light-emitting element used is expected to be applied to next-generation flat panel displays. In addition, a light-emitting device in which light-emitting elements (for example, organic EL elements) are arranged in a matrix is ​​different from conventional liquid crystal displays. Compared to LCD displays, it is believed to have an advantage in that it has a wider viewing angle and better visibility. .

[0004] In an organic EL element, a light-emitting layer is sandwiched between electrodes, and when a voltage is applied, light is injected from the electrodes. The electrons and holes recombine to excite the organic light-emitting material, and the excited state The spectrum of light emitted by a luminescent material is determined by the characteristics of that luminescent material. By using different types of organic compounds as luminescent materials, various A light-emitting element that emits light of various colors can be obtained.

[0005] In the case of light-emitting devices designed to display images, in order to reproduce full-color images, To achieve this, it is necessary to obtain at least three colors of light: red, green, and blue. To improve image quality, a microcavity structure or color filters are used. Its use has also been devised to improve the color purity of emitted light.

[0006] In addition, one method for achieving full color is to paint the light-emitting layer separately for each pixel. The light-emitting layer is deposited only on the required pixels using a shadow mask. In order to reduce the number of processes and reduce costs, layers other than the light-emitting layer, such as a hole transport layer and an electron transport layer, are A configuration in which a transmission layer and a cathode are formed in common for a plurality of pixels has been disclosed (for example, Patent Document 1). See 1). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-6362 Summary of the Invention [Problem to be solved by the invention]

[0008] In the case of the configuration described in Patent Document 1, it is necessary to paint a different light-emitting layer for each pixel, High accuracy is required to place the openings of the dough mask at the desired positions (also called alignment). As light-emitting devices become more precise, higher alignment accuracy is required. This leads to a problem of reduced yield in the manufacture of light-emitting devices.

[0009] In addition, a light-emitting element that emits white light and a color filter that is provided over the light-emitting element Or, when a color conversion layer is used to make the image full color, the effect of the color filter or color conversion layer To compensate for this energy loss, the current density of the light-emitting element is increased. If the temperature is too high, power consumption increases or reliability of the light-emitting element decreases.

[0010] In view of the above-described problems, one object of one embodiment of the present invention is to provide a novel light-emitting device. Another object of the present invention is to provide a novel light-emitting device with high productivity and reduced power consumption. Another object is to provide a method for manufacturing a novel light-emitting device. .

[0011] The above description of the problem does not preclude the existence of other problems. The embodiment does not necessarily have to solve all of these problems. Problems other than those mentioned above can be solved by the specification. It is clear from the description of the specification, etc. that the problems other than those mentioned above cannot be extracted from the description of the specification, etc. It is possible to issue it. [Means for solving the problem]

[0012] One embodiment of the present invention includes first to third pixels, and the first pixel includes a first light-emitting element. and a first optical element, and the second pixel has a second light-emitting element and a second optical element. The third pixel has a third light-emitting element, and the first to third light-emitting elements The first light-emitting layer or the second light-emitting layer is commonly used. a first light-emitting material having a spectral peak in the range of 100 nm to 580 nm, and a second light-emitting material The light-emitting layer has a second light-emitting layer having a spectral peak in the range of 420 nm to 480 nm. The present invention relates to a light-emitting device having a material.

[0013] One aspect of the present invention is a light-emitting device that emits a plurality of lights, the light-emitting device exhibiting a first color. a first pixel having a function of emitting light of a second color; and a second pixel having a function of emitting light of a second color. a second pixel having a function of being able to emit light of a third color; and a third pixel having a first light-emitting element and a first optical element. The first light-emitting element and the first optical element have an overlapping region, and the second pixel has: The second light emitting element and the second optical element are , have mutually overlapping regions, the third pixel has a third light-emitting element, and the first light-emitting element a first electrode, a first light-emitting layer on the first electrode, a second light-emitting layer on the first light-emitting layer, and a second light-emitting layer on the second electrode; and a second electrode on the light-emitting layer, and the second light-emitting element has a third electrode and a a first light-emitting layer, a second light-emitting layer on the first light-emitting layer, and a second electrode on the second light-emitting layer; The third light-emitting element has a fourth electrode, a second light-emitting layer on the fourth electrode, and a second light-emitting layer and a second electrode on the first light-emitting layer, the first light-emitting layer emitting light in the range of 540 nm to 580 nm. The first light-emitting material has a spectral peak between 420 nm and 480 nm. a second light-emitting material having a spectral peak in the range of 100 nm or less; It is an optical device.

[0014] Another embodiment of the present invention is a light-emitting device that emits a plurality of lights, the light-emitting device including: a first a first pixel having a function of emitting light exhibiting a first color and a second pixel having a function of emitting light exhibiting a second color; a second pixel having a function of emitting light of a third color; and a third pixel having a function of: the first light-emitting element and the first optical element have an overlapping region, and the second The pixel has a second light-emitting element and a second optical element, The third pixel has a third light-emitting element and the first light-emitting element has an overlapping area. The optical element includes a first electrode, a first transparent conductive film on the first electrode, and a second transparent conductive film on the first transparent conductive film. a first light-emitting layer, a second light-emitting layer on the first light-emitting layer, and a second electrode on the second light-emitting layer. The second light-emitting element includes a third electrode, a second transparent conductive film on the third electrode, and a second transparent A first light-emitting layer on the conductive film, a second light-emitting layer on the first light-emitting layer, and a second light-emitting layer on the second light-emitting layer. and a third light-emitting element having a fourth electrode and a third transparent conductive film on the fourth electrode. a second light-emitting layer on the third transparent conductive film, and a second electrode on the second light-emitting layer; The light-emitting layer is a first light-emitting layer having a spectral peak in the range of 540 nm to 580 nm. The second light-emitting layer has a spectral peak in the range of 420 nm to 480 nm. The light-emitting device is characterized by having a second light-emitting material having a fluorine-containing compound.

[0015] In the above structure, the first transparent conductive film has a first region, and the first region is the second transparent conductive film has a second region, and the second region has a second thickness. the third transparent conductive film has a third region, the third region has a third thickness, and the first Preferably, the first thickness is greater than the second thickness, and the second thickness is greater than the third thickness.

[0016] Another embodiment of the present invention is a light-emitting device that emits a plurality of lights, the light-emitting device including: a first a first pixel having a function of emitting light exhibiting a first color and a second pixel having a function of emitting light exhibiting a second color; a second pixel having a function of emitting light of a third color; a third pixel having a function of emitting light of a fourth color; and a fourth pixel having a function of emitting light of a fourth color. and four pixels, the first pixel having a first light-emitting element and a first optical element, The first light emitting element and the first optical element have an overlapping area, and the second pixel has a second The light emitting element and the second optical element are mutually the third pixel has a third light-emitting element, and the fourth pixel has a fourth light-emitting element. The first light-emitting element has a first electrode, a first light-emitting layer on the first electrode, and a first a second light-emitting layer on the light-emitting layer, and a second electrode on the second light-emitting layer, a third electrode; a first light-emitting layer on the third electrode; a second light-emitting layer on the first light-emitting layer; a second electrode on the second light-emitting layer, and a third light-emitting element having a fourth electrode and a and a second electrode on the second light-emitting layer. a first light-emitting layer on the fifth electrode; a second light-emitting layer on the first light-emitting layer; and a second electrode on the first light-emitting layer, the first light-emitting layer emitting light in the range of 540 nm to 580 nm. The first light-emitting material has a spectral peak between 420 nm and 480 nm. The second light-emitting material has a spectral peak in the range of 0 nm or less. It is a light-emitting device.

[0017] Another embodiment of the present invention is a light-emitting device that emits a plurality of lights, the light-emitting device including: a first a first pixel having a function of emitting light exhibiting a first color and a second pixel having a function of emitting light exhibiting a second color; a second pixel having a function of emitting light of a third color; a third pixel having a function of emitting light of a fourth color; and a fourth pixel having a function of emitting light of a fourth color. and four pixels, the first pixel having a first light-emitting element and a first optical element, The first light emitting element and the first optical element have an overlapping area, and the second pixel has a second The light emitting element and the second optical element are mutually the third pixel has a third light-emitting element, and the fourth pixel has a fourth light-emitting element. The first light-emitting element has a first electrode, a first transparent conductive film on the first electrode, and a second a first light-emitting layer on the first transparent conductive film, a second light-emitting layer on the first light-emitting layer, and a second light-emitting layer on the second light-emitting layer; and a second electrode, and the second light-emitting element has a third electrode and a second transparent electrode on the third electrode. a conductive film, a first light-emitting layer on the second transparent conductive film, a second light-emitting layer on the first light-emitting layer, and a a second electrode on the second light-emitting layer, and a third light-emitting element having a fourth electrode and a a third transparent conductive film, a second light-emitting layer on the third transparent conductive film, and a second light-emitting layer on the second light-emitting layer. and a fourth light-emitting element having a fifth electrode and a fourth transparent conductive film on the fifth electrode. a second light-emitting layer on the fourth transparent conductive film, and a second electrode on the second light-emitting layer; The light-emitting layer is a first light-emitting layer having a spectral peak in the range of 540 nm to 580 nm. The second light-emitting layer has a spectral peak in the range of 420 nm to 480 nm. The light-emitting device is characterized by having a second light-emitting material having a fluorine-containing compound.

[0018] In the above structure, the first transparent conductive film has a first region, and the first region is the second transparent conductive film has a second region, and the second region has a second thickness. the third transparent conductive film has a third region, the third region has a third thickness, and a fourth The transparent conductive film has a fourth region, the fourth region has a fourth thickness, and the first thickness is The fourth thickness is greater than the second thickness, and the second thickness is greater than the third thickness. It is preferable that the thickness is thicker than the thickness.

[0019] Another embodiment of the present invention is a light-emitting device that emits a plurality of lights, the light-emitting device including: a first a first pixel having a function of emitting light exhibiting a first color and a second pixel having a function of emitting light exhibiting a second color; a second pixel having a function of emitting light of a third color; a third pixel having a function of emitting light of a fourth color; and a fourth pixel having a function of emitting light of a fourth color. and four pixels, the first pixel having a first light-emitting element and a first optical element, The first light emitting element and the first optical element have an overlapping area, and the second pixel has a second The light emitting element and the second optical element are mutually the third pixel has a third light-emitting element, and the fourth pixel has a fourth light-emitting element. The first light-emitting element has a first electrode, a first light-emitting layer on the first electrode, and a first a second electrode on the light-emitting layer, and the second light-emitting element has a third electrode and a second electrode on the third electrode. a first light-emitting layer and a second electrode on the first light-emitting layer, and a third light-emitting element having a fourth electrode a second light-emitting layer on the fourth electrode; a first light-emitting layer on the second light-emitting layer; and a second light-emitting layer on the first light-emitting layer. the fourth light-emitting element has a fifth electrode and a first light-emitting element on the fifth electrode. a layer and a second electrode on the first light-emitting layer, the first light-emitting layer emitting light having a wavelength of 540 nm or more and 580 nm or more; The first light-emitting material has a spectral peak in the range of 4 nm or less, and the second light-emitting layer has a The second light-emitting material has a spectral peak in the range of 20 nm to 480 nm. The light emitting device is characterized by the above.

[0020] The first light-emitting material preferably emits yellow-green, yellow, or orange light. In addition, the second light-emitting material preferably exhibits purple, blue, or blue-green emission. The order in which the first light-emitting layer and the second light-emitting layer are stacked may be reversed as appropriate.

[0021] Another embodiment of the present invention is an electronic device including a light-emitting device having any of the above structures and a touch sensor function. The category also includes a lighting device having a touch sensor function and a light emitting device having the above configuration. In addition, the light-emitting device in this specification is an image display device, It refers to a light source (including lighting devices). It also refers to a connector, such as an FPC (Flexible Printed Circuit) that is attached to a light emitting device. ble printed circuit) or TCP (Tape Carrier The TCP is attached to a module with a printed wiring board. The module is mounted with a COG (Chip On Glass) method. All modules in which C (integrated circuit) is directly mounted are also included in the light-emitting device. [Effects of the Invention]

[0022] According to one embodiment of the present invention, a novel light-emitting device can be provided. According to the embodiment, a novel light-emitting device with high productivity and reduced power consumption can be provided. According to one embodiment of the present invention, a method for manufacturing a novel light-emitting device can be provided. .

[0023] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other effects from the descriptions in the aspects and claims. [Brief explanation of the drawings]

[0024] [Figure 1] 1A and 1B are a top view and a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 2] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 3] 1A and 1B are a top view and a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 4] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 5] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 6] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 7] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 8] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 9] FIG. 1 is a cross-sectional view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 10] FIG. 1 is a top view illustrating a light-emitting device according to one embodiment of the present invention. [Figure 11] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 12] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 13] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 14] 1A and 1B are cross-sectional views illustrating the element structure of a light-emitting element. [Figure 15] 1A and 1B are cross-sectional views illustrating the element structure of a light-emitting element. [Figure 16] 1A and 1B illustrate a light-emitting device. [Figure 17] 1A and 1B are diagrams illustrating electronic devices. [Figure 18] 1A and 1B are diagrams illustrating electronic devices. [Figure 19] 1A and 1B are diagrams illustrating a lighting device. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the above description, and the embodiments and details thereof may be modified without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the embodiments described below. It is not to be construed as being limited to the content.

[0026] In addition, the position, size, range, etc. of each component shown in the drawings etc. are not necessarily shown in order to facilitate understanding. It may not represent the actual position, size, range, etc. Therefore, the disclosed invention The position, size, range, etc. are not necessarily limited to those disclosed in the drawings, etc.

[0027] In addition, in this specification and the like, ordinal numbers such as 1st, 2nd, etc. are used for convenience. It does not indicate the order of processes or stacking. For example, "first" may be changed to "second" "the" or "third" can be used as appropriate for explanation. The ordinal numbers listed in the specification do not match the ordinal numbers used to identify an aspect of the present invention. There are cases where this happens.

[0028] In addition, in this specification and the like, when explaining the configuration of the invention using drawings, the same The reference numerals are used commonly even among different drawings.

[0029] (Embodiment 1) In this embodiment, a light emitting device of the present invention will be described below with reference to FIGS. do.

[0030] <Configuration example 1 of light-emitting device> FIG. 1A is a top view illustrating an example of a light-emitting device according to one embodiment of the present invention, and FIG. This corresponds to the cross-sectional view of the cross section taken along the dashed line X1-Y1 shown in FIG. 1(A). The light emitting device 100 shown in FIG. 1 includes a first pixel 101R that emits light of a first color and a second pixel 101B that emits light of a second color. a second pixel 101G that emits light of a third color; and a third pixel 10 1B. The first pixel 101R has a first light-emitting element 120R and a first light-emitting element 121B. The second pixel 101G has a first optical element 156R overlapping with the optical element 120R. a second light-emitting element 120G, a second optical element 156G overlapping the second light-emitting element 120G, and the third pixel 101B has a third light-emitting element 120B.

[0031] The first light emitting element 120R and the second light emitting element 120G are formed on the first substrate 102. The first electrode 104, the first light-emitting layer 110 on the first electrode 104, and the second light-emitting layer 110 on the first light-emitting layer 110. a second light-emitting layer 112 and a second electrode 114 on the second light-emitting layer 112; Device 120B includes first electrode 104, second light-emitting layer 112 on first electrode 104, and and a second electrode 114 on the second light-emitting layer 112. A transparent conductive film 106 may be provided on the first electrode 104 .

[0032] The first optical element 156R and the second optical element 156G are disposed below the substrate 152. A light-shielding layer 154 is provided below the substrate 152 to block light from the adjacent light-emitting elements. The light-shielding layer 154 may not be provided.

[0033] The light-emitting device 100 also has an insulating partition wall 108. The partition wall 108 is formed between the lower electrode (the The first electrode 104 and the transparent conductive film 106 are covered with the insulating film 105. It has an opening that overlaps with the transparent conductive film 106).

[0034] The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The second light-emitting layer 112 has a first light-emitting material having a wavelength of 420 nm or more and 480 nm or more. The second luminescent material has a spectral peak in the lower range. Layer 110 has a first light-emitting material that emits yellow light, and second light-emitting layer 112 has a blue light-emitting material that emits blue light. The first light-emitting material and the second light-emitting material have a singlet Luminescent substances (e.g., fluorescent substances) that convert excitation energy into light emission and triplet excited energies Any luminescent material that converts energy into luminescence (e.g., phosphorescent material) may be used. stomach.

[0035] In this way, in the light-emitting device 100 shown in FIG. 1(A), the first light-emitting layer 110 is The second light-emitting layer 112 is commonly used for the first light-emitting element 120R and the second light-emitting element 120G. Common to the first light emitting element 120R, the second light emitting element 120G, and the third light emitting element 120B In each light-emitting element, the first light-emitting layer 110 or the second light-emitting layer 112 is used in common. By using the same as above, productivity in forming the light emitting device can be improved. The separate coating process for the first light-emitting layer 110 during the fabrication of each light-emitting element of the device 100 is performed only once. This allows for increased productivity.

[0036] Furthermore, red (R) light is emitted from the first pixel 101R, and red (R) light is emitted from the second pixel 10 The third pixel 101G emits green (G) light, and the third pixel 101B emits blue (B) light. Therefore, the first pixel 101R, the second pixel 101G, and The third pixel 101B allows full color display.

[0037] The first light-emitting element 120R of the first pixel 101R emits yellow light. The yellow light is emitted and passes through the first optical element 156R, whereby the yellow light is converted to red. The second light emitting element 120G of the second pixel 101G emits light. Yellow light is emitted from the second optical element 156G, and the yellow light passes through the second optical element 156G. By doing so, the first light emitting element 120R becomes green light and is emitted to the outside. In the second light emitting element 120G, the second light emitting layer 112 does not contribute to light emission. The third light emitting element 120B of the third pixel 101B emits blue light. The light is then emitted directly to the outside without passing through optical elements, etc. B has no optical element.

[0038] As described above, the light emitted from the third light emitting element 120B is emitted to the outside without passing through an optical element. Therefore, the light emitted from the third light emitting element 120B is extracted to the first light emitting element 120B. The loss is less than that of the light emitted from the first light emitting element 120R and the second light emitting element 120G. It is ejected.

[0039] Therefore, it is possible to reduce the power consumption of the light emitting device 100. When a blue fluorescent substance is used as 0B, the effect of reducing power consumption is more significant. In addition, when the third light emitting element 120B is not provided with an optical element, the third light emitting element In order to prevent external light reflection in the device, optical elements or circular polarizers may be used depending on the application. It may also be possible to use the following.

[0040] In addition, in FIG. 1(B), red light, green light, and The blue and blue light are each represented by a dashed arrow, and the same applies to the light-emitting device described below. In this way, the light emitting device 100 shown in FIGS. 1(A) and 1(B) emits light emitted by each light emitting element. A top emission type (top emission type) in which light is extracted from the opposite side of the substrate 102 on which the optical element is formed. However, one embodiment of the present invention is not limited thereto, and light emitted from each light-emitting element may be is extracted onto the substrate side where the light emitting element is formed (also called bottom emission type). Alternatively, the light emitted by each light emitting element may be reflected from both above and below the substrate 102 on which the light emitting element is formed. The light source may be a double-sided injection type (also called a dual emission type) in which light is extracted from both sides.

[0041] In addition, in FIG. 1A, a first pixel 101R and a second pixel 101R of the light-emitting device of one embodiment of the present invention are The first pixel 101G and the third pixel 101B are configured in a stripe arrangement. However, the present invention is not limited to this. For example, the pixel structure of the light-emitting device according to one embodiment of the present invention may be 10(A) or the pentile arrangement shown in FIG. 10(B). A column may be applied.

[0042] Here, other components of the light emitting device 100 shown in FIGS. 1(A) and 1(B) will be described in detail below. I will explain in detail.

[0043] <Substrate> The substrate 102 is used as a support for the light emitting element. The substrate 102, 152 is made of, for example, glass, quartz, or plastic. A flexible substrate may be used. It refers to a flexible substrate, such as polycarbonate, Examples include plastic substrates made of acrylate and polyethersulfone. , film (polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, etc.) In addition, it is also possible to use inorganic vapor deposition films. Any other material may be used as long as it functions as a support in the manufacturing process.

[0044] <First electrode> The first electrode 104 functions as a lower electrode or an anode of each light-emitting element. The first electrode 104 is preferably made of a conductive material having reflectivity. The reflectivity of the material is 40% or more and 100% or less, preferably 70% or more and 100% or less, of visible light. 0% or less, and its resistivity is 1×10 -2 Examples include conductive materials with a resistance of Ωcm or less. Specifically, the first electrode 104 may be made of silver, aluminum, or a material containing silver or aluminum. As the alloy containing aluminum, for example, aluminum Examples of alloys containing silver include alloys containing nickel and lanthanum. The first electrode 104 may be an alloy containing silver, palladium, and copper. The film can be formed by a coating method, a vapor deposition method, a printing method, a coating method, or the like. ), the first electrode 104 is provided in an island shape for each light-emitting element. In each light-emitting element, the first electrodes 104 are individually identified by a third electrode. It may be called the third electrode, fourth electrode, or fifth electrode.

[0045] <Transparent conductive film> The transparent conductive film 106 functions as a lower electrode or an anode of each light-emitting element. The transparent conductive film 106 resonates the desired light from each light-emitting layer and intensifies the light of that wavelength. The optical distance between the first electrode 104 and the second electrode 114 is adjusted for each desired wavelength of light so that For example, by changing the film thickness of the transparent conductive film 106, a desired light The optical distance between the electrodes is adjusted to mλ / 2 (where m is a natural number) for the wavelength λ of the light. The specific configuration of the optical distance between the electrodes will be described later.

[0046] The transparent conductive film 106 may be, for example, an indium oxide-tin oxide (Indium Ti ITO), silicon or silicon oxide Indium oxide-tin oxide, indium oxide-zinc oxide (Indium Zinc O xide), tungsten oxide, and indium oxide containing zinc oxide, etc. In particular, the transparent conductive film 106 is preferably made of a material with a large work function (4.0 eV or more). The transparent conductive film 106 can be formed by sputtering, vapor deposition, printing, or the like. The layer can be formed by a printing method, a coating method, or the like.

[0047] <Second electrode> The second electrode 114 functions as an upper electrode or a cathode of each light-emitting element. The second electrode 114 is made of a conductive material having reflectivity and a conductive material having light-transmitting properties. It is preferable that the conductive material has a visible light reflectance of 20% or more and 80% or less. , preferably 40% or more and 70% or less, and the resistivity is 1×10 -2 Ωcm or less The second electrode 114 may be made of a conductive metal, alloy, or conductive material. The layer can be formed by using one or more compounds having a low work function. It is preferable to use a material with a valence energy of 3.8 eV or less. For example, a material in Group 1 or 2 of the periodic table Elements belonging to the group (alkali metals such as lithium and cesium, calcium, strontium, etc.) alkaline earth metals, magnesium, etc.), alloys containing these elements (e.g., Mg-Ag, Al-Li), europium, ytterbium, and other rare earth metals, including these rare earth metals The second electrode 114 may be made of a material such as an alloy, aluminum, or silver. It can be formed by a ring method, a vapor deposition method, a printing method, a coating method, or the like.

[0048] <Bulkhead> The partition wall 108 may be formed using an inorganic material or an organic material as long as it has insulating properties. Inorganic materials include silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, and silicon nitride films. Examples of the organic material include silicon film, aluminum oxide film, and aluminum nitride film. Examples of the material include photosensitive resin materials such as acrylic resin and polyimide resin.

[0049] <Light-emitting layer> The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The second light-emitting layer 112 has a first light-emitting material that emits light in the range of 420 nm or more and 480 nm or less. The first light-emitting layer 110 comprises a second light-emitting material having a spectral peak in the range of In addition to the first light-emitting material, the light-emitting device may contain one or both of an electron-transporting material and a hole-transporting material. The second light-emitting layer 112 is made of an electron transport material in addition to the second light-emitting material. Alternatively, it may contain one or both of the hole transport materials.

[0050] The first and second light-emitting materials are materials that convert singlet excitation energy into light emission. It is possible to use luminescent materials that can emit light or that convert triplet excitation energy into light. Examples of the luminescent substance include the following:

[0051] Luminescent substances that convert singlet excitation energy into luminescence include fluorescent substances. For example, N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N, N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H- Carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenyl amine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10 -diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9 -diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-chlor PCAPA, 4-(10-phenyl-9-anthryl) -4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-( 9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAP) BA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TB P), N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl] -N,N'-diphenyl-pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H- Fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation: 1,6mMem Substances that emit blue light (emission wavelength 400nm to 480nm) such as FLPAPrn, , rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyl BPT, 2-(2-[4-(dimethylamino)phenyl] ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: D CM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H -benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}p Yellow light emission (emission wavelength 540nm to 580nm) such as dibenzofuran (abbreviated as DCM2) m) can be used.

[0052] Furthermore, examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials. Examples of such substances include bis[2-(4',6'-difluorophenyl)pyridinato -N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: F Ir6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]stomach Lithium(III) picolinate (abbreviation: FIrpic), tris{2-[5-(2-methyl- (2,6-dimethylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole {K,N,N-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mppttz) -dmp)3), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl- 4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz )3), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1, 2,4-triazolato]iridium(III) (abbreviation: Ir(Mptz1-mp)3), Tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato) Iridium(III) (abbreviation: Ir(PrPrTz1-Me)3), fac-tris[(1 (2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium (III) (abbreviation: Ir(iPrpmi)3), tris[3-(2,6-dimethylphenyl Iridium(III) (Ir)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) Blue light emission (emission wavelength 400nm to 480nm) such as Ir(dmpimpt-Me)3 0 nm) and (acetylacetonato)bis(6-methyl-4-phenylpyridine) Iridium(III) (abbreviation: Ir(mppm)2(acac)), (acetylacetonate ruacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium( III) (Abbreviation: Ir(tBuppm)2(acac)), (acetylacetonato)bis [6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation : Ir(nbppm)2(acac)), (acetylacetonato)bis[5-methyl-6 -(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: Ir(mpmppm)2(acac)), (acetylacetonato)bis{4,6-dimethyl 2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl- κC}iridium(III) (abbreviation: Ir(dmppm-dmp)2(acac)), ( acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III)( Abbreviation: Ir(dppm)2(acac)), (acetylacetonato)bis(3,5-dimethyl (2-phenyl-2-pyrazinato)iridium(III) (abbreviation: Ir(mppr-Me) 2(acac), (acetylacetonato)bis(5-isopropyl-3-methyl-2-furan (phenylpyrazinate)iridium(III) (abbreviation: Ir(mppr-iPr)2(aca c), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: I r(pq)3), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) Cetylacetonate (abbreviation: Ir(pq)2(acac)), bis(benzo[h]quinolinol) Nato)iridium(III) acetylacetonate (abbreviation: Ir(bzq)2(acac )), bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ ) Iridium (I II) Acetylacetonate (abbreviation: Ir(dpo)2(acac)), bis{2-[4 '-(Perfluorophenyl)phenyl]pyridinato-N,C 2’} Iridium (III ) acetylacetonate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2- Phenylbenzothiazolato-N,C 2’ ) Iridium(III) acetylacetonate ( Yellow light emission (emission wavelength 540nm to 580nm) such as Ir(bt)2(acac) m) can be used.

[0053] The electron transporting material used in the first light-emitting layer 110 and the second light-emitting layer 112 is π-electron deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds are preferred, for example, 2 -[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl) Biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq -II), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl ]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzo[f,h]quinoxaline benzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7m DBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl ]Dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II) and other quinoxalines Examples of the quinoxaline derivatives include quinoxaline and dibenzoquinoxaline derivatives.

[0054] The hole transport material used in the first light-emitting layer 110 and the second light-emitting layer 112 is π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives and indole derivatives) and aromatic Aromatic amine compounds are preferred, for example, 4-phenyl-4'-(9-phenyl-9H-carbamoyl)- PCBA1BP, 4,4'-di(1-benzol-3-yl)triphenylamine -naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenyl Amine (abbreviation: PCBNBB), 3-[N-(1-naphthyl)-N-(9-phenylcarbamoyl) (3-(carbazol-3-yl)amino)-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4',4''-Tris[N-(1-naphthyl)-N-phenylamino]triphenyl Amine (abbreviation: 1'-TNATA), 2,7-bis[N-(4-diphenylaminophenyl) [N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPA2SF) , N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene 1,3-diphenyl-1,3-diamine (abbreviation: PCA2B), N-(9,9-dimethyl-2-diphenyl) N,N-(9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF) ',N''-triphenyl-N,N',N''-tris(9-phenylcarbazole-3 -yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 2-[N-(9-furanyl) (phenylcarbazol-3-yl)-N-phenylamino]spiro-9,9'-bifluorene PCASF, 2-[N-(4-diphenylaminophenyl)-N-phenyl amino]spiro-9,9'-bifluorene (abbreviation: DPASF), N,N'-bis[4- (Carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluor 2,7-diaminediamine (abbreviation: YGA2F), 4,4'-bis[N-(3-methylphenyl)- phenyl)-N-phenylamino]biphenyl (abbreviation: TPD), 4,4'-bis[N-( 4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) , N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl- 2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amine o]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), 3-[ N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol-3-yl Rubazole (abbreviation: PCzPCA1), 3-[N-(4-diphenylaminophenyl)- N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6- Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcaprylamide Rubazole (abbreviation: PCzDPA2), 4,4'-bis(N-{4-[N'-(3-methyl (phenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl( Abbreviation: DNTPD), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1 -naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3,6- Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenyl One example is carbazole (abbreviation: PCzPCA2).

[0055] <Light blocking layer> The light-shielding layer 154 has a function of suppressing reflection of external light. The light-shielding layer 154 has a function of preventing the color mixture of light emitted from adjacent light-emitting elements. Examples include metals, resins containing black pigments, carbon black, metal oxides, and multiple metal oxides. A composite oxide containing a solid solution of such a material can be used.

[0056] <Optical elements> The first optical element 156R and the second optical element 156G are configured to extract a specific color from the incident light. For example, color filters, bandpass filters, Multilayer filters can be applied. Color conversion elements can also be applied to optical elements. A color conversion element is an optical element that converts incident light into light with a longer wavelength than the wavelength of the light. It is preferable that the color conversion element is an element that uses a quantum dot method. By using this method, the color reproducibility of the light emitting device can be improved.

[0057] The first optical element 156R extracts red light from the light emitted by the first light emitting element 120R. The second optical element 156G also transmits green light from the light emitted by the second light emitting element 120G. The thread transmits light.

[0058] The optical element may be provided so as to overlap the third light emitting element 120B, and a plurality of optical elements may be provided on the third light emitting element 120B. It may be provided overlapping the first light emitting element 120R and / or the second light emitting element 120G. As the optical element, for example, a circular polarizing plate, an anti-reflection film, etc. can be provided. When the light emitting element of the light emitting device is provided on the side where the light emitted from the light emitting element is extracted, the light entering from the outside of the light emitting device This can prevent the incident light from being reflected inside the light emitting device and being emitted to the outside. Furthermore, providing an anti-reflection film can weaken the external light reflected on the surface of the light emitting device. This allows the light emitted by the light emitting device to be clearly observed.

[0059] <Configuration Example 2 of Light-Emitting Device> Next, a configuration example different from the light emitting device 100 shown in FIGS. 1(A) and 1(B) will be described with reference to FIG. The following explanation will be given using B).

[0060] 2A and 2B are cross-sectional views illustrating an example of a light-emitting device according to one embodiment of the present invention. 2(A) and 2(B) are top views of the light-emitting device 100 shown in FIG. Since it is the same as the top view, the description here is omitted.

[0061] The light emitting device 100A shown in FIG. 2A includes a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color The first pixel 101R has a first light-emitting element 121 and a third pixel 101B. R and a first optical element 156R overlapping with the first light emitting element 121R, 101G is a second light emitting element 121G and a second optical element overlapping the second light emitting element 121G. The third pixel 101B has a third light-emitting element 121B.

[0062] The first light emitting element 121R includes a first electrode 104 and a first A transparent conductive film 106R, a first light-emitting layer 110 on the first transparent conductive film 106R, and a first light-emitting layer 110 on the first transparent conductive film 106R. a second light-emitting layer 112 on the light-emitting layer 110, and a second electrode 114 on the second light-emitting layer 112; The second light emitting element 121G has a first electrode 104 and a second transparent electrode on the first electrode 104. a transparent conductive film 106G, a first light-emitting layer 110 on the second transparent conductive film 106G, and a first light-emitting layer a second light-emitting layer 112 on the layer 110, and a second electrode 114 on the second light-emitting layer 112. The third light emitting element 121B has a first electrode 104 and a third transparent electrode on the first electrode 104. a conductive film 106B, a second light-emitting layer 112 on the third transparent conductive film 106B, and a second light-emitting layer and a second electrode 114 on the substrate 112.

[0063] The light emitting device 100A shown in FIG. 2A has the following advantages compared to the light emitting device 100 shown in FIG. A first light emitting element 121R, a second light emitting element 121G, and a third light emitting element 121B are provided. The first light emitting element 121R, the second light emitting element 121G, and The third light emitting element 121B has a microresonator structure (also called a microcavity structure). When the microcavity structure is combined with each light-emitting element, Therefore, light having a specific wavelength can be extracted efficiently.

[0064] The light emitted from the first light-emitting layer 110 and the second light-emitting layer 112 is incident on the first electrode 104 and the second electrode 106. The resonance occurs between the first electrode 114 and the second electrode 114. In the light emitting device 100A, the first The thicknesses of the first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film 106B are By adjusting the thickness, the intensity of light emitted from the first light-emitting layer 110 and the second light-emitting layer 112 can be adjusted. The intensity can be strengthened.

[0065] Specifically, the first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film 106R are The thickness of the conductive film 106B is adjusted to obtain the desired wavelength λ of light. The optical distance between the electrode 114 is adjusted to be mλ / 2 (where m is a natural number). Furthermore, the first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film The thickness of the film 106B is adjusted to obtain the desired wavelength λ of light. The optical distance between the first light-emitting layer 110 and the second light-emitting layer 112 is (2m'+1)λ / 4 (where m' is a natural number).

[0066] Strictly speaking, the optical distance between the first electrode 104 and the second electrode 114 is The product of the film thickness from the reflective area of ​​the second electrode 104 to the reflective area of ​​the second electrode 114 and the refractive index However, it is difficult to strictly determine the reflective area of ​​the first electrode 104 or the second electrode 114. Since it is difficult to determine the position of the first electrode 104 and the second electrode 114, It is assumed that the above-mentioned effect can be obtained sufficiently by assuming it as a region.

[0067] Furthermore, strictly speaking, the optical distance between the first electrode 104 and the light-emitting layer that emits the desired light is The optical coupling between the reflective area in the electrode 104 and the light emitting area in the light emitting layer that emits the desired light is However, the reflection area of ​​the first electrode 104 and the desired Since it is difficult to precisely determine the light-emitting region in the light-emitting layer, Any position on the electrode 104 is a reflection region, and any position on the light-emitting layer that emits desired light is a light-emitting region. This assumption is sufficient to obtain the above-mentioned effects.

[0068] The first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film 106 The thickness of B is in the order of "first transparent conductive film 106R>second transparent conductive film 106G>third transparent conductive film 106R". In other words, the first transparent conductive film 106R satisfies the relationship of The second transparent conductive film 106G has a first region, the first region having a first thickness, the second region has a second thickness, and the third transparent conductive film 106B has a third region a third region having a third thickness, the first thickness being greater than the second thickness, and the second region having a third thickness; For example, the first transparent conductive film 106R has a thickness of 1 The second transparent conductive film 106G is an ITO film having a thickness of 60 nm. The third transparent conductive film 106B may be an ITO film having a thickness of 20 nm. The first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film 10 When the thickness of 6B satisfies the above relationship, light having a specific wavelength can be extracted from the light emitted by each light-emitting element. Light can be extracted efficiently.

[0069] The light emitting device 100B shown in FIG. 2B has a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color The first pixel 101R has a first light-emitting element 122. R and a first optical element 156R overlapping with the first light emitting element 122R, 101G is a second light emitting element 122G and a second optical element overlapping the second light emitting element 122G. The third pixel 101B has a third light-emitting element 122B.

[0070] The first light emitting element 122R and the second light emitting element 122G have a first electrode 104 and A first transparent conductive film 106 on the first electrode 104 and a hole injection layer on the first transparent conductive film 106 a hole transport layer 132 on the hole injection layer 131; a first light emitting layer 133 on the hole transport layer 132; a light-emitting layer 110, a second light-emitting layer 112 on the first light-emitting layer 110, and a second light-emitting layer 112 on the second light-emitting layer 112. An electron transport layer 133, an electron injection layer 134 on the electron transport layer 133, and a The third light emitting element 122B has a first electrode 104 and a second electrode 114. , the first transparent conductive film 106 on the first electrode 104, and the hole injection layer on the first transparent conductive film 106 a hole injection layer 131, a hole transport layer 132 on the hole injection layer 131, and a second hole transport layer 132 on the hole transport layer 132. The light-emitting layer 112, the electron transport layer 133 on the second light-emitting layer 112, and the electron transport layer 133 on the electron transport layer 133 a second electrode 114 on the electron injection layer 134;

[0071] The light emitting device 100B has a first light emitting element 122R, a second light emitting element 122R, and a The difference is that an element 122G and a third light emitting element 122B are provided.

[0072] In this way, in the light-emitting device 100B shown in FIG. 2(B), the first light-emitting layer 110 is The first light emitting element 122R and the second light emitting element 122G share the same light emitting layer 11. 2 is a first light emitting element 122R, a second light emitting element 122G, and a third light emitting element 122B. The first light emitting element 122R, the second light emitting element 122G, and the third light emitting element 122R are also used in common. The light-emitting element 122B includes a hole injection layer 131, a hole transport layer 132, and an electron transport layer 133. The electron injection layer 134 and the electron injection layer 135 can be used in common in each light-emitting element. That is, a hole injection layer 131, a hole transport layer 132, an electron transport layer 133, and an electron injection layer 134. Therefore, it is not necessary to paint each light emitting element differently. The separate coating step during fabrication can be performed only once for the first light-emitting layer 110.

[0073] Here, the light emitting device 100B includes a hole injection layer 131, a hole transport layer 132, an electron transport layer 133, and a The details of layer 133 and electron injection layer 134 will now be described.

[0074] <Hole injection layer, hole transport layer> The hole injection layer 131 is connected to the first light-emitting layer 110 via the hole transport layer 132 having a high hole transporting property. and a layer for injecting holes into the second light-emitting layer 112, which is made of a hole transporting material and an acceptor material. The layer contains a hole transport material and an acceptor material. The conductive material pulls out electrons from the hole transport material, generating holes, which then transport the holes. Holes are injected into the first light-emitting layer 110 and the second light-emitting layer 112 through the transport layer 132. Alternatively, the hole injection layer 131 may be a laminate of a hole transport material and an acceptor material. The hole transport layer 132 may be formed using a hole transport material.

[0075] Examples of hole transport materials used in the hole injection layer 131 and the hole transport layer 132 include: ,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD) and N,N'-bis(3-methylphenyl)-N,N'-diphenyl- [1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4',4''- Tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4', 4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA) , 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]tri Phenylamine (abbreviation: MTDATA), 4,4'-bis[N-(spiro-9,9'-biphenylamine)] Aromatic compounds such as [fluoren-2-yl]-N-phenylamino]biphenyl (abbreviation: BSPB) Aromatic amine compound, 3-[N-(9-phenylcarbazol-3-yl)-N-phenyl amino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-( 9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazo (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbamoyl) [(3-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc. Other examples include 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP) , 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB ), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazo Carbazole derivatives such as CzPA (abbreviation: CzPA) can be used. The substance is mainly 10 -6 cm 2 A material with a hole mobility of 1 / Vs or more. Any substance other than these may be used as long as it has a higher hole transporting property than the above.

[0076] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriflate) Phenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl (N'-phenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bi Poly(phenyl)benzidine (abbreviation: Poly-TPD) and other polymer compounds are used. It can also be done as follows.

[0077] The acceptor material used in the hole injection layer 131 is 7,7,8,8-tetramethyl-2-phenylpropanol. tetrafluoroquinodimethane (abbreviation: F4-TCNQ), Loranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexanol hexaazatriphenylene (HAT-CN) and other compounds containing electron-withdrawing groups (halogen groups or cyano groups) In particular, condensed compounds having multiple heteroatoms such as HAT-CN can be used. Compounds in which an electron-withdrawing group is bonded to an aromatic ring are thermally stable and are preferred. Metal oxides, which belong to Groups 4 to 8 of the periodic table, can also be used. Specifically, vanadium oxide, niobium oxide, titanium oxide, talc, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide Molybdenum oxide is particularly preferred because it has high electron-accepting properties. It is preferred because it has low moisture absorption and is easy to handle.

[0078] The hole injection layer 131 may be formed by using the above-mentioned acceptor material alone or in combination with other materials. In this case, the acceptor material may extract electrons from the hole transport layer, The hole transport layer can inject holes. The acceptor material transports the extracted electrons to the anode. To transport.

[0079] <Electron transport layer> The electron transport layer 133 is a layer containing a substance with a high electron transport property. Alq3, tris(4-methyl-8-quinolinolato)aluminum (abbreviated as Almq3) , bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq2), BAlq, Zn(BOX)2, bis[2-(2-hydroxyphenyl)benzothiazol- ] zinc (abbreviation: Zn(BTZ)2) and other metal complexes can be used. 4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazol-1,3,4-diol PBD, 1,3-bis[5-(p-tert-butylphenyl)-1, 3,4-Oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4-te rt-butylphenyl)-4-phenyl-5-(4-biphenylyl)-1,2,4-trimethyl Azole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethyl phenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtT AZ), Bathophenanthroline (abbreviated as Bphen), Bathocuproine (abbreviated as BCP) ), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: B Heteroaromatic compounds such as poly(2,5-pyridine) can also be used. diyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl) -co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-di octylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl) Polymer compounds such as PF-BPy can also be used. The material is mainly 1×10 -6 cm 2 It is a substance with an electron mobility of 1 / Vs or more. Any substance other than those mentioned above can be used as the electron transport layer 133 as long as it has a higher electron transporting property than hole transporting property. It may be used.

[0080] The electron transport layer 133 may be not only a single layer, but also a layer of two or more layers made of the above-mentioned materials. It may also be layered.

[0081] <Electron injection layer> The electron injection layer 134 is a layer containing a substance with high electron injection properties. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2) , lithium oxide (LiO x ) and the like, alkaline metals, alkaline earth metals, or the like Also, rare earth compounds such as erbium fluoride (ErF3) can be used. Metal compounds can be used. Alternatively, electride can be used for the electron injection layer 134. The electride may be, for example, a mixed oxide of calcium and aluminum. Examples include substances containing high concentrations of methylcellulose.

[0082] The electron injection layer 134 may contain a composite material formed by mixing an organic compound and an electron donor (donor). Such composite materials may be formed by electron donors giving electrons to organic compounds. In this case, the organic compound is It is preferable that the material is excellent in transporting the generated electrons. Specifically, for example, the above-mentioned The material constituting the electron transport layer 133 (metal complex, heteroaromatic compound, etc.) can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. For the metal, alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cesium, Examples include magnesium, calcium, erbium, and ytterbium. Preferred are lithium metal oxides and alkaline earth metal oxides, and lithium oxide and calcium oxide are preferred. , barium oxide, etc. Also, Lewis bases such as magnesium oxide are used. It is also possible to use organic compounds such as tetrathiafulvalene (abbreviation: TTF). It can also be done as follows.

[0083] The above-mentioned light-emitting layer, hole-transporting layer, hole-injecting layer, electron-transporting layer, and electron-injecting layer are These are sputtering, vapor deposition (including vacuum deposition), and printing (e.g., letterpress printing). printing, gravure printing, lithography, stencil printing, etc.), inkjet printing, It can be formed by a method such as a fabric method.

[0084] As described above, in the light emitting device 100B, each light emitting element has a hole transport layer, a hole injection layer, The structure is provided with an electron transport layer and an electron injection layer. ) is similar to the light emitting device 100 shown in (B), and provides similar effects.

[0085] <Configuration Example 3 of Light-Emitting Device> Next, a configuration example different from the light emitting device 100 shown in FIGS. 1(A) and 1(B) will be described with reference to FIG. The following explanation will be given using B).

[0086] FIG. 3A is a top view illustrating an example of a light-emitting device according to one embodiment of the present invention, and FIG. This corresponds to the cross-sectional view of the cross section taken along the dashed line X2-Y2 shown in Figure 3(A). The light emitting device 140 shown in FIG. 1 includes a first pixel 101R that emits light of a first color and a second pixel 101B that emits light of a second color. a second pixel 101G that emits light of a third color; and a third pixel 10 1B and a fourth pixel 101Y that emits light of a fourth color. 101R is a first light emitting element 120R and a first optical element overlapping the first light emitting element 120R. The second pixel 101G has a second light-emitting element 120G and a second light-emitting element 156R. The third pixel 101B has a second optical element 156G overlapping with the element 120G. The fourth pixel 101Y has a fourth light-emitting element 120B, and the fourth pixel 101Y has a fourth light-emitting element 120Y.

[0087] In addition, the first light emitting element 120R, the second light emitting element 120G, and the fourth light emitting element 120 Y is the first electrode 104, the first light-emitting layer 110 on the first electrode 104, and the first light-emitting layer a second light-emitting layer 112 on the substrate 110, and a second electrode 114 on the second light-emitting layer 112. The third light-emitting element 120B has a first electrode 104 and a second light-emitting layer on the first electrode 104. 3B, the second light-emitting layer 112 is formed on the second electrode 114. As shown, a transparent conductive film 106 may be provided on the first electrode 104 .

[0088] In this way, in the light emitting device 140, the first light emitting layer 110 is formed as the first light emitting element 120. R, the second light emitting element 120G, and the fourth light emitting element 120Y. The layer 112 is divided into a first light-emitting element 120R, a second light-emitting element 120G, a third light-emitting element 120B, and a The first light-emitting layer 1 is used in common with the fourth light-emitting element 120Y. By using the first light-emitting layer 10 or the second light-emitting layer 112 in common, productivity in forming the light-emitting element can be improved. Specifically, the separate coating process for the light emitting elements of the light emitting device 140 can be performed as follows: Since the first light-emitting layer 110 can be formed only once, productivity is improved.

[0089] Furthermore, red (R) light is emitted from the first pixel 101R, and red (R) light is emitted from the second pixel 10 The third pixel 101G emits green (G) light, and the third pixel 101B emits blue (B) light. The fourth pixel 101Y emits light exhibiting yellow (Y). Therefore, the first pixel 101R, the second pixel 101G, the third pixel 101B, and The four pixels 101Y can provide a full color display.

[0090] The light emitting device 140 also includes a first pixel 101R, a second pixel 101G, and a third pixel In addition to the first pixel 101B, the fourth pixel 101Y is also included, which improves color reproducibility. Furthermore, the light emitting device 140 has the fourth pixel 101Y, which reduces power consumption. It is possible.

[0091] The first light-emitting element 120R of the first pixel 101R emits yellow light. The yellow light is emitted and passes through the first optical element 156R, whereby the yellow light is converted to red. The second light emitting element 120G of the second pixel 101G emits light. Yellow light is emitted from the second optical element 156G, and the yellow light passes through the second optical element 156G. By this, the light becomes green and is emitted to the outside. The light emitting element 120Y emits yellow light, which does not pass through the optical elements, etc. The light is emitted to the outside as it is. In the fourth light emitting element 120Y, the second light emitting layer 112 does not contribute to light emission. The third light-emitting element 120B of the third pixel 101B emits blue light. The light is emitted directly to the outside without passing through the optical elements. The third light-emitting element 120B and the fourth pixel 101Y do not have an optical element. The light emitted from the fourth light emitting element 120Y is extracted to the outside without passing through any optical element. In other words, the light emitted from the third light emitting element 120B and the fourth light emitting element 120Y The light emitted from the first light emitting element 120R and the second light emitting element 120G is The light is also emitted with little loss.

[0092] Therefore, it is possible to reduce the power consumption of the light emitting device 140. When a blue fluorescent substance is used as 0B, the effect of reducing power consumption becomes more pronounced. It is noted that the third light emitting element 120B and the fourth light emitting element 120Y are provided with optical elements. If the third light emitting element 120B and the fourth light emitting element 120Y are not provided with the external light reflection, To prevent reflection, an optical element or a circular polarizer may be provided depending on the application.

[0093] The other configuration of the light emitting device 140 shown in FIGS. 3(A) and 3(B) is the same as that of the light emitting device shown in FIGS. It is similar to the optical device 100 and provides the same effects.

[0094] <Configuration Example 4 of Light-Emitting Device> Next, regarding an example of a configuration different from that of the light emitting device 140 shown in FIG. 3(A)(B), The following explanation will be given using B).

[0095] 4A and 4B are cross-sectional views illustrating an example of a light-emitting device according to one embodiment of the present invention. 4(A) and 4(B) are top views of the light-emitting device 140 shown in FIG. Since it is the same as the top view, the description here is omitted.

[0096] The light emitting device 140A shown in FIG. 4A includes a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color It has a third pixel 101B and a fourth pixel 101Y that emits light of a fourth color. The first pixel 101R has a first light emitting element 121R and a second light emitting element 121R. The second pixel 101G has a second light-emitting element 121 and a first optical element 156R that overlaps the first light-emitting element 121. G and a second optical element 156G overlapping with the second light emitting element 121G, The fourth pixel 101Y has a fourth light-emitting element 121B. It has 21Y.

[0097] The first light emitting element 121R includes a first electrode 104 and a first A transparent conductive film 106R, a first light-emitting layer 110 on the first transparent conductive film 106R, and a first light-emitting layer 110 on the first transparent conductive film 106R. a second light-emitting layer 112 on the light-emitting layer 110, and a second electrode 114 on the second light-emitting layer 112; The second light emitting element 121G has a first electrode 104 and a second transparent electrode on the first electrode 104. a transparent conductive film 106G, a first light-emitting layer 110 on the second transparent conductive film 106G, and a first light-emitting layer a second light-emitting layer 112 on the layer 110, and a second electrode 114 on the second light-emitting layer 112. The third light emitting element 121B has a first electrode 104 and a third transparent electrode on the first electrode 104. a conductive film 106B, a second light-emitting layer 112 on the third transparent conductive film 106B, and a second light-emitting layer The fourth light-emitting element 121Y has a first electrode 104 and a second electrode 114 on the first electrode 104. a fourth transparent conductive film 106Y on the first electrode 104; A first light-emitting layer 110, a second light-emitting layer 112 on the first light-emitting layer 110, and a second light-emitting layer 112 on the second light-emitting layer 110. and a second electrode 114 on the substrate 12.

[0098] The light emitting device 140A shown in FIG. 4A has the following advantages compared to the light emitting device 140 shown in FIG. The first light emitting element 121R, the second light emitting element 121G, the third light emitting element 121B, and the fourth light emitting element 121G. The difference is that a light emitting element 121Y is provided. The first light emitting element 121G, the third light emitting element 121B, and the fourth light emitting element 121Y are micro-coherent light emitting elements. When the microcavity structure is combined with a light-emitting device, the light-emitting device Light having a specific wavelength can be extracted efficiently from the emitted light.

[0099] The light emitted from the first light-emitting layer 110 and the second light-emitting layer 112 is incident on the first electrode 104 and the second electrode 106. The resonance occurs between the first electrode 114 and the second electrode 114. In the light emitting device 140A, the first the first transparent conductive film 106R, the second transparent conductive film 106G, the third transparent conductive film 106B, and By adjusting the thickness of the transparent conductive film 106Y, the first light-emitting layer 110 and the second light-emitting layer The intensity of the light emitted from 112 can be increased.

[0100] Specifically, the first transparent conductive film 106R, the second transparent conductive film 106G, the third transparent conductive film 106R, the The thickness of the fourth transparent conductive film 106B and the fourth transparent conductive film 106Y is adjusted to obtain a desired wavelength λ of light. The optical distance between the first electrode 104 and the second electrode 114 is mλ / 2 (where m is the Furthermore, the first transparent conductive film 106R and the second transparent conductive film 1 The thicknesses of the transparent conductive film 106G, the third transparent conductive film 106B, and the fourth transparent conductive film 106Y are adjusted to the desired thickness. For the desired wavelength λ of light, the first electrode 104 and the light-emitting layer (first light-emitting layer 110 and second light-emitting layer The optical distance between the optical fiber 112 and the optical fiber 113 is (2m'+1)λ / 4 (where m' is a natural number). Adjust it so that

[0101] A first transparent conductive film 106R, a second transparent conductive film 106G, a third transparent conductive film 106B, The thickness of the fourth transparent conductive film 106Y is set to "first transparent conductive film 106R>fourth transparent conductive film 106Y". The relationship of "transparent conductive film 106Y>second transparent conductive film 106G>third transparent conductive film 106B" is satisfied. In other words, the first transparent conductive film 106R has a first region, and the first region has a first thickness, the second transparent conductive film 106G has a second region, and the second region is , has a second thickness, and the third transparent conductive film 106B has a third region, and the third region is The fourth transparent conductive film 106Y has a third thickness, and the fourth transparent conductive film 106Y has a fourth region, and the fourth region is a The first thickness is greater than the fourth thickness, and the fourth thickness is greater than the second thickness. The first thickness is thicker than the first transparent conductive film 106R, and the second thickness is thicker than the third thickness. The first transparent conductive film 106G is an ITO film with a thickness of 100 nm, and the second transparent conductive film 106G is an ITO film with a thickness of 60 nm. The third transparent conductive film 106B is an ITO film having a thickness of 20 nm, and the fourth The transparent conductive film 106Y may be an ITO film having a thickness of 80 nm. the first transparent conductive film 106R, the second transparent conductive film 106G, the third transparent conductive film 106B, and When the thickness of the transparent conductive film 106Y satisfies the above relationship, the light emitted from each light emitting element is Light having a specific wavelength can be extracted efficiently.

[0102] The light emitting device 140B shown in FIG. 4B has a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color The pixel has a third pixel 101B and a fourth pixel 101Y that emits light of a fourth color. In addition, the first pixel 101R overlaps with the first light emitting element 122R. The second pixel 101G has a first optical element 156R that and a second optical element 156G overlapping with the second light emitting element 122G, The fourth pixel 101Y has a fourth light-emitting element 122B. It has 2Y.

[0103] In addition, the first light emitting element 122R, the second light emitting element 122G, and the fourth light emitting element 122 Y is the first electrode 104, the first transparent conductive film 106 on the first electrode 104, and the first transparent conductive film 106 on the first electrode 104. A hole injection layer 131 on the transparent conductive film 106, a hole transport layer 132 on the hole injection layer 131, and a hole transport layer 132 on the hole injection layer 131. A first light-emitting layer 110 on the hole transport layer 132 and a second light-emitting layer 112 on the first light-emitting layer 110. an electron transport layer 133 on the second light-emitting layer 112; and an electron injection layer 13 on the electron transport layer 133. 4 and a second electrode 114 on the electron injection layer 134. 2B is a first electrode 104, a first transparent conductive film 106 on the first electrode 104, and a first a hole injection layer 131 on the transparent conductive film 106, and a hole transport layer 132 on the hole injection layer 131; a second light-emitting layer 112 on the hole-transporting layer 132 and an electron-transporting layer 133 on the second light-emitting layer 112; an electron injection layer 134 on the electron transport layer 133; and a second electrode 114 on the electron injection layer 134. and,

[0104] The light emitting device 140B has a first light emitting element 12 2R, a second light emitting element 122G, and a third light emitting element 122B are provided. do.

[0105] The first light-emitting element 122R, the second light-emitting element 122G, the third light-emitting element 122B, and the fourth light-emitting element 122Y has a hole injection layer 131, a hole transport layer 132, an electron transport layer The layer 133 and the electron injection layer 134 can be used in common in each light-emitting element. That is, a hole injection layer 131, a hole transport layer 132, an electron transport layer 133, and an electron injection layer Therefore, it is not necessary to paint the layer 134 differently for each light emitting element. The separate coating process during the fabrication of the optical element can be performed only once for the first light-emitting layer 110. Cut.

[0106] The light-emitting device 140B includes a hole injection layer 131, a hole transport layer 132, and an electron transport layer 133. The above description of the light-emitting device 100B is incorporated herein by reference with respect to the electron injection layer 134. It can be formed by

[0107] The other configurations are the same as those of the light emitting device 140 shown in FIGS. 3(A) and 3(B). This has the effect of:

[0108] <Configuration Example 5 of Light-Emitting Device> Next, a configuration example different from the light emitting device 100 shown in FIGS. 1(A) and 1(B) will be described with reference to FIG. The following description will be given with reference to FIG.

[0109] 5A and 5B, and FIG. 6 are cross-sectional views illustrating examples of light-emitting devices according to embodiments of the present invention. 5(A) and (B) and the top view of the light-emitting device shown in FIG. 6 are the same as those shown in FIG. 10. Since this is the same as the top view of the light emitting device 100 shown in FIG.

[0110] The light emitting device 160 shown in FIG. 5A includes a first pixel 101R that emits light of a first color. a second pixel 101G that emits light of a second color; and a third pixel 101G that emits light of a third color. The first pixel 101R has a first light-emitting element 123R. and a first optical element 156R overlapping with the first light emitting element 123R, 01G is a second light emitting element 123G and a second optical element overlapping with the second light emitting element 123G. The third pixel 101B has a third light-emitting element 123B.

[0111] The first light emitting element 123R and the second light emitting element 123G have a first electrode 104 and A first light-emitting layer 110 on the first electrode 104 and a second electrode 114 on the first light-emitting layer 110 The third light emitting element 123B has a first electrode 104 and a second electrode 105 on the first electrode 104. the first light-emitting layer 110 on the second light-emitting layer 112; 5A, the first electrode 104 is disposed on the second electrode 114. A transparent conductive film 106 may be provided on top.

[0112] In this way, in the light-emitting device 160 shown in FIG. 5(A), the first light-emitting layer 110 is The first light emitting element 123R, the second light emitting element 123G, and the third light emitting element 123B are commonly The second light-emitting layer 112 is used in the third light-emitting element 123B. By using the same light-emitting layer 110, productivity in forming the light-emitting element can be improved. Specifically, the separate coating process for the light emitting elements of the light emitting device 160 is carried out by This allows for only one cycle of 112, thereby increasing productivity.

[0113] Furthermore, red (R) light is emitted from the first pixel 101R, and red (R) light is emitted from the second pixel 10 The third pixel 101G emits green (G) light, and the third pixel 101B emits blue (B) light. Therefore, the first pixel 101R, the second pixel 101G, and The third pixel 101B allows full color display.

[0114] The first light-emitting element 123R of the first pixel 101R emits yellow light. The yellow light is emitted and passes through the first optical element 156R, whereby the yellow light is converted to red. The second light emitting element 123G of the second pixel 101G emits light. Yellow light is emitted from the second optical element 156G, and the yellow light passes through the second optical element 156G. By this, the light becomes green and is emitted to the outside. The third light emitting element 123B emits blue light, which does not pass through optical elements, etc. That is, the third pixel 101B does not have an optical element. Therefore, the light emitted from the third light emitting element 123B is taken to the outside without passing through any optical element. In other words, the light emitted from the third light emitting element 123B is The light emitted from the first light emitting element 123R and the second light emitting element 123G has less loss than the light emitted from the first light emitting element 123R and the second light emitting element 123G. Therefore, the power consumption of the light emitting device 160 can be reduced. In the light emitting element 123B, the first light emitting layer 110 does not contribute to light emission.

[0115] The light emitting device 160A shown in FIG. 5B has a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color The first pixel 101R includes a first light-emitting element 124. R and a first optical element 156R overlapping with the first light emitting element 124R, 101G includes a second light emitting element 124G and a second optical element overlapping the second light emitting element 124G. The third pixel 101B has a third light-emitting element 124B.

[0116] The first light emitting element 124R includes a first electrode 104 and a first A transparent conductive film 106R, a first light-emitting layer 110 on the first transparent conductive film 106R, and a first light-emitting layer 110 on the first transparent conductive film 106R. The second light-emitting element 124G has a first electrode 114 on the optical layer 110. 04, a second transparent conductive film 106G on the first electrode 104, and a second transparent conductive film 106G a first light-emitting layer 110 on the first electrode 114; and a third light-emitting layer 114 on the first electrode 114. The light emitting element 124B includes a first electrode 104 and a third transparent conductive film 1 on the first electrode 104. 06B, the second light-emitting layer 112 on the third transparent conductive film 106B, and and a second electrode 114 on the first light-emitting layer 110.

[0117] The first light-emitting element 124R, the second light-emitting element 124G, and the third light-emitting element 124 B is a configuration having a microcavity structure.

[0118] The first light emitting element 124R, the second light emitting element 124G, and the third light emitting element 124B are The first transparent conductive film 106R, the second transparent conductive film 106G, and the third transparent conductive film 10 The configuration of 6B can be the same as that of the light emitting device 100.

[0119] The other configurations are the same as those of the light emitting device 160, and the same effects are achieved.

[0120] The light emitting device 160B shown in FIG. 6 includes a first pixel 101R that emits light of a first color, a second pixel 101G that emits light of a second color; and a third pixel 101G that emits light of a third color. The first pixel 101R includes a first light-emitting element 125R and a second light-emitting element 125B. The second pixel 101 includes a first light-emitting element 125R and a first optical element 156R overlapping the first light-emitting element 125R. G is a second light emitting element 125G and a second optical element 125G overlapping with the second light emitting element 125G. 56G, and the third pixel 101B has a third light-emitting element 125B.

[0121] The first light emitting element 125R and the second light emitting element 125G have a first electrode 104 and a transparent conductive film 106 on the first electrode 104, a hole injection layer 131 on the transparent conductive film 106, a hole transport layer 132 on the hole injection layer 131; and a first light-emitting layer 110 on the hole transport layer 132. , an electron transport layer 133 on the first light-emitting layer 110, and an electron injection layer 134 on the electron transport layer 133. and a second electrode 114 on the electron injection layer 134. B is a first electrode 104, a transparent conductive film 106 on the first electrode 104, and a transparent conductive film 10 6, a hole injection layer 131 on the hole injection layer 131, a hole transport layer 132 on the hole injection layer 131, and a hole transport layer 13 2, a second light-emitting layer 112 on the second light-emitting layer 112, an electron transport layer 133 on the second light-emitting layer 112, and an electron transport layer an electron injection layer 134 on the first electrode 133 and a second electrode 114 on the electron injection layer 134 .

[0122] The light-emitting device 160B shown in FIG. 6 includes a hole injection layer 131, a hole transport layer 132, an electron transport layer 133, and a The layer 133 and the electron injection layer 134 may be formed by referring to the description of the light-emitting device 100B. It can be achieved.

[0123] The first light-emitting element 125R, the second light-emitting element 125G, and the third light-emitting element 125B The hole injection layer 131, the hole transport layer 132, the electron transport layer 133, and the electron injection layer 13 The hole injection layer 13 can be used in common for each light emitting element. 1. The hole transport layer 132, the electron transport layer 133, and the electron injection layer 134 are coated on each light-emitting element. Therefore, the separate coating process for the light emitting elements of the light emitting device 160B is unnecessary. The second light-emitting layer 112 may be doped only once.

[0124] The other configurations are the same as those of the light emitting device 160, and the same effects are achieved.

[0125] <Configuration Example 6 of Light-Emitting Device> Next, regarding an example of a configuration different from that of the light emitting device 140 shown in FIG. 3(A)(B), The following description will be made with reference to FIGS. 8(A) and 8(B), and 9.

[0126] The light emitting device 170 shown in FIG. 7A includes a first pixel 101R that emits light of a first color. a second pixel 101G that emits light of a second color; and a third pixel 101G that emits light of a third color. The pixel 101B emits light of a third color, and the pixel 101Y emits light of a fourth color. The first pixel 101R has a first light-emitting element 123R and a light-emitting element 123R overlapping the first light-emitting element 123R. The second pixel 101G has a first optical element 156R and a second light-emitting element 123G. , a second light emitting element 123G and a second optical element 156G overlapping each other, and a third pixel 10 1B has a third light-emitting element 123B, and the fourth pixel 101Y has a fourth light-emitting element 123 It has Y.

[0127] In addition, the first light emitting element 123R, the second light emitting element 123G, and the fourth light emitting element 123 Y is the first electrode 104, the first light-emitting layer 110 on the first electrode 104, and the first light-emitting layer The third light-emitting element 123B has a first electrode 104 and a second electrode 114 on the first electrode 110. a second light-emitting layer 112 on the first electrode 104; and a first light-emitting layer 112 on the second light-emitting layer 112. 110 and a second electrode 114 on the first light-emitting layer 110.

[0128] In this way, in the light emitting device 170, the first light emitting layer 110 is formed as the first light emitting element 123. R, the second light emitting element 123G, and the third light emitting element 123B are used in common. The layer 112 is used in the third light-emitting element 123B. In each light-emitting element, the first light-emitting layer 110 By using these in common, productivity in forming the light emitting element can be improved. In the manufacturing process of each light emitting element of the light emitting device 170, the first light emitting layer 112 is painted separately. It can be limited to one time only.

[0129] Furthermore, red (R) light is emitted from the first pixel 101R, and red (R) light is emitted from the second pixel 10 The third pixel 101G emits green (G) light, and the third pixel 101B emits blue (B) light. The fourth pixel 101Y emits light exhibiting yellow (Y). It can be done.

[0130] The light emitting device 170 includes a first pixel 101R, a second pixel 101G, and a third pixel In addition to the first pixel 101B, the fourth pixel 101Y is also included, which improves color reproducibility. Furthermore, the light emitting device 170 has the fourth pixel 101Y, which reduces power consumption. It is possible.

[0131] The first light-emitting element 123R of the first pixel 101R emits yellow light. The yellow light is emitted and passes through the first optical element 156R, whereby the yellow light is converted to red. The second light emitting element 123G of the second pixel 101G emits light. Yellow light is emitted from the second optical element 156G, and the yellow light passes through the second optical element 156G. By this, the light becomes green and is emitted to the outside. The third light emitting element 123B emits blue light, which does not pass through optical elements, etc. The fourth light emitting element 123Y emits yellow light. The light is emitted from the third pixel and is emitted directly to the outside without passing through any optical elements. The third pixel 101B and the fourth pixel 101Y do not have an optical element. The light emitted from the fourth light emitting element 123B and the fourth light emitting element 123Y is taken outside without passing through an optical element. In other words, the third light emitting element 123B and the fourth light emitting element 123 The light emitted from Y is the light emitted from the first light emitting element 123R and the second light emitting element 123G. Therefore, the light emitting device 170 can reduce power consumption. In the third light emitting element 123B, the first light emitting layer 110 does not contribute to

[0132] The light emitting device 170A shown in FIG. 7B has a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color It has a third pixel 101B and a fourth pixel 101Y that emits light of a fourth color. The first pixel 101R has a first light-emitting element 124R and a light-emitting element 124B overlapping the first light-emitting element 124R. The second pixel 101G has a second light-emitting element 124 and a first optical element 156R that overlaps the first light-emitting element 124. G and a second optical element 156G overlapping with the second light emitting element 124G, The fourth pixel 101Y has a fourth light-emitting element 124B. It has 24Y.

[0133] The first light emitting element 124R includes a first electrode 104 and a first A transparent conductive film 106R, a first light-emitting layer 110 on the first transparent conductive film 106R, and a first light-emitting layer 110 on the first transparent conductive film 106R. The second light-emitting element 124G has a first electrode 114 on the optical layer 110. 04, a second transparent conductive film 106G on the first electrode 104, and a second transparent conductive film 106G a first light-emitting layer 110 on the first electrode 114; and a third light-emitting layer 114 on the first electrode 114. The light emitting element 124B includes a first electrode 104 and a third transparent conductive film 1 on the first electrode 104. 06B, the second light-emitting layer 112 on the third transparent conductive film 106B, and a first light-emitting layer 110 and a second electrode 114 on the first light-emitting layer 110; The light emitting element 124Y includes a first electrode 104 and a fourth transparent conductive film 10 on the first electrode 104. 6Y, the first light-emitting layer 110 on the fourth transparent conductive film 106Y, and and a second electrode 114.

[0134] The first light-emitting element 124R, the second light-emitting element 124G, the third light-emitting element 124B, The fourth light emitting element 124Y has a microcavity structure. When combined with a light-emitting element, it efficiently extracts light with a specific wavelength from the light emitted by the light-emitting element. It can be taken out.

[0135] A first light-emitting element 124R, a second light-emitting element 124G, a third light-emitting element 124B, and The first transparent conductive film 106R and the second transparent conductive film 106G of the fourth light emitting element 124Y, The configurations of the third transparent conductive film 106B and the fourth transparent conductive film 106Y are the same as those of the previous embodiment. The light emitting device 140 may have the same configuration as that of the light emitting device 140 shown in the embodiment.

[0136] The light emitting device 170B shown in FIG. 8A has a first pixel 101 that emits light of a first color. a second pixel 101G that emits light of a second color R, and a third pixel 101G that emits light of a third color The pixel has a third pixel 101B and a fourth pixel 101Y that emits light of a fourth color. In addition, the first pixel 101R overlaps with the first light-emitting element 125R. The second pixel 101G has a first optical element 156R that and a second optical element 156G overlapping with the second light emitting element 125G, The fourth pixel 101Y has a fourth light-emitting element 125B. It has 5Y.

[0137] In addition, the first light emitting element 125R, the second light emitting element 125G, and the fourth light emitting element 125 Y is the first electrode 104, the transparent conductive film 106 on the first electrode 104, and the transparent conductive film 10 6, a hole injection layer 131 on the hole injection layer 131, a hole transport layer 132 on the hole injection layer 131, and a hole transport layer 13 2, the first light-emitting layer 110 on the first light-emitting layer 110, the electron transport layer 133 on the first light-emitting layer 110, and the electron transport layer an electron injection layer 134 on the first electrode 133 and a second electrode 114 on the electron injection layer 134 . The third light emitting element 125B has a first electrode 104 and a transparent conductive film on the first electrode 104. a film 106, a hole injection layer 131 on the transparent conductive film 106, and a hole transport layer on the hole injection layer 131. layer 132, the second light-emitting layer 112 on the hole-transporting layer 132, and the electron-transporting layer 132 on the second light-emitting layer 112. a transport layer 133, an electron injection layer 134 on the electron transport layer 133, and a second and an electrode 114.

[0138] The light-emitting device 170B shown in FIG. 8(A) includes a hole injection layer 131, a hole transport layer 132, an electrode The electron transport layer 133 and the electron injection layer 134 may be formed by referring to the light-emitting device 140B. It can be achieved.

[0139] The other configurations are the same as those of the light emitting device 170, and the same effects are achieved.

[0140] The light emitting device 170C shown in FIG. 8(B) is a modified example of the light emitting device 170B shown in FIG. 8(A). Specifically, the third pixel 1 of the light emitting device 170C has a different structure from the third pixel 1 of the light emitting device 170C. The third optical element 156B and the fourth optical element 156Y are connected to the third pixel 101B and the fourth pixel 101Y. and

[0141] The third optical element 156B and the fourth optical element 156Y are the same as the first optical element shown above. The third optical element 156R can have the same configuration as the second optical element 156G. Optical element 156B transmits blue light emitted by third light emitting element 125B. The fourth optical element 156Y emits yellow light from the light emitted by the fourth light emitting element 125Y. It transmits light.

[0142] In this way, by providing an optical element above each light-emitting element, color purity is improved. Furthermore, it is possible to suppress reflection of external light.

[0143] The light emitting device 170D shown in FIG. 9 is a modified example of the light emitting device 170B shown in FIG. 8(A). The difference is in the configuration of the optical elements. Specifically, the first pixel 101R of the light emitting device 170D is The second pixel 101G, the third pixel 101B, and the fourth pixel 101Y have optical elements. This is a configuration that does not

[0144] In this way, by adopting a configuration in which no optical element is provided above each light-emitting element, power consumption can be reduced. However, as shown in the light emitting device 170D, each light emitting element has a small common When the resonator structure is provided, light having a specific wavelength can be efficiently extracted from the light emitted by the light emitting element. The light emission spectrum from the light-emitting element varies depending on the observation angle. When the viewing angle dependency is large, As shown in the light emitting device 170C, an optical element may be provided above each light emitting element. This makes it possible to suppress viewing angle dependency.

[0145] The respective components of the light-emitting device exemplified above can be used in appropriate combination. do.

[0146] <Method 1 for manufacturing a light-emitting device> Next, a manufacturing method of a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. Here, a method for manufacturing the light-emitting device 140 shown in FIGS. I will explain.

[0147] 11 and 12 are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention. be.

[0148] The method for manufacturing the light emitting device 140 described below includes six steps, namely, first to sixth steps. .

[0149] <First step> The first step is to form the lower electrode of each light-emitting element (specifically, the first electrode 104 and the transparent conductive layer 106). The conductive film 106 and the partition wall 108 are attached to the substrate 102 on which the light-emitting layer containing the organic compound is not formed. This is the process of forming the above (see FIG. 11(A)).

[0150] In the first step, there is no risk of damaging the light-emitting layer containing the organic compound. Various microfabrication techniques can be applied. In this embodiment, the first A conductive film that will become the electrode 104 and the transparent conductive film 106 is formed, and then photolithography is used. The conductive film is patterned by dry etching and wet etching. The conductive film is processed into an island shape to form a lower electrode. A partition wall 108 is formed to cover the

[0151] In the first step, a reflective conductive film is formed on the substrate 102, and then a transparent conductive film is formed. In this embodiment, a film made of silver and palladium is formed as the reflective conductive film. The transparent conductive film is an ITO film.

[0152] Before the first step, a transistor may be formed on the substrate 102. The transistor and the first electrode 104 may be electrically connected.

[0153] The transparent conductive film may be formed in a plurality of steps. By forming the transparent conductive film, it is possible to form a transparent conductive film with a thickness that forms a microcavity structure in each light-emitting element. can.

[0154] The partition wall 108 has an opening so as to overlap with the lower electrode. The transparent conductive film functions as a lower electrode of the light-emitting element. Acrylic resin is used.

[0155] <Second step> The second step is to form the first light-emitting layer 110 using a shadow mask 190. (See FIG. 11(B)).

[0156] In the second step, a shadow mask 190 having openings 191 is applied to the transparent conductive film 1 06 and the partition wall 108, and from the side where the shadow mask 190 is arranged , a first light-emitting layer 110 is formed by depositing an organic compound 192 having a first light-emitting material. Form.

[0157] In this embodiment, the substrate 102 is supplied to the deposition device, and the shadow mask 190 is attached to the deposition source ( Then, the opening 191 of the shadow mask 190 is positioned at a desired position. The shadow mask 190 is aligned so that the opening 191 is A metal foil with a thickness of several tens of micrometers or more or a metal plate with a thickness of several hundred micrometers or less is provided. It is a formed shielding plate.

[0158] The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The first light-emitting material is a phosphorescent material that emits yellow light. The phosphorescent organic compound can be used alone. However, it may be mixed with other materials and deposited. For example, a phosphorescent organic compound may be used as a guest material. The guest material is dispersed in a host material having a higher excitation energy than the guest material and evaporated. You may do so.

[0159] Before forming the first light-emitting layer 110, the first light-emitting element 120R and the second light-emitting element The organic compound common to the third light-emitting element 120G, the third light-emitting element 120B, and the fourth light-emitting element 120Y (e.g., a hole injection layer and / or a hole transport layer) may be formed on the transparent conductive film 106 .

[0160] <Third step> The third step is to form the lower electrode (transparent conductive film 106), the partition wall 108, and the first light-emitting layer 1. This is a step of forming a second light-emitting layer 112 on the light-emitting layer 10 (see FIG. 11(C)).

[0161] The second light-emitting layer 112 has a spectral peak in the range of 420 nm to 480 nm. The second light-emitting material is a fluorescent material that emits blue light. The fluorescent organic compound can be used alone. However, it may be mixed with other materials and deposited. For example, a fluorescent organic compound may be used as a guest material. The guest material is dispersed in a host material having a higher excitation energy than the guest material and evaporated. You may do so.

[0162] <Fourth step> The fourth step is to form a second electrode 114, which functions as the upper electrode of the light-emitting element, on the second electrode 114. This is a step of forming the optical layer 112 (see FIG. 11(D)).

[0163] Before forming the second electrode 114, the first light emitting element 120R and the second light emitting element 120R are 20G, the third light-emitting element 120B, and the fourth light-emitting element 120Y. For example, an electron transport layer and / or an electron injection layer may be formed on the second light-emitting layer 112. .

[0164] Through the above steps, the first light emitting element 120R, the second light emitting element 120G, and the third light emitting element A fourth light-emitting element 120B, and a fourth light-emitting element 120Y are formed on the substrate 102.

[0165] <5th step> The fifth step is to form a light-shielding layer 154, a first optical element 156R, and a second optical element 156R on the substrate 152. This is a step of forming the optical element 156G (see FIG. 12(A)).

[0166] In this embodiment, the light-shielding layer 154 is formed by applying an organic resin film containing a black pigment to a desired area. Then, the first optical element 156R and the second optical element 156R are formed on the substrate 152 and the light-shielding layer 154. The first optical element 156R is formed from an organic material containing a red pigment. A resin film is formed in a desired area. Also, as the second optical element 156G, a resin film containing a green pigment is formed. The organic resin film is then formed in the desired area.

[0167] <Sixth step> The sixth step is to form the first light-emitting element 120R and the second light-emitting element 120R on the substrate 102. a third light-emitting element 120G, a third light-emitting element 120B, and a fourth light-emitting element 120Y, and The formed light-shielding layer 154, the first optical element 156R, and the second optical element 156G are This is a step of laminating and sealing using a sealing material (not shown) (see FIG. 12(B)).

[0168] Through the above steps, the light-emitting device 140 shown in FIG. In this embodiment, the process of separately painting the light emitting element is performed only once for the first light emitting layer 110. As a result, it is possible to provide a method for manufacturing a light-emitting device with high productivity. It is possible to provide a method for manufacturing a novel light-emitting device in which the reduction in aperture ratio is suppressed. Thus, a novel light emitting device can be provided.

[0169] <Method 2 for manufacturing a light-emitting device> Next, a manufacturing method of a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. Note that a method for manufacturing the light-emitting device 170 shown in FIG.

[0170] 13A to 13C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to one embodiment of the present invention.

[0171] The method for manufacturing the light emitting device 170 described below includes six steps, namely, first to sixth steps. .

[0172] <First step> The first step is to form the lower electrode of each light-emitting element (specifically, the first electrode 104 and the transparent conductive layer 106). The conductive film 106 and the partition wall 108 are attached to the substrate 102 on which the light-emitting layer containing the organic compound is not formed. This is the process of forming the above (see FIG. 13(A)).

[0173] The first step is the same as the first step of the light emitting device 140 shown above. , a detailed description of which will be omitted here.

[0174] <Second step> In the second step, the second light-emitting layer 112 is formed using a shadow mask 190a. This is the process (see FIG. 13(B)).

[0175] In the second step, a shadow mask 190a having openings 191 is applied to the transparent conductive film. 106 and the partition wall 108, and the side where the shadow mask 190a is arranged. Then, an organic compound 193 having a second light-emitting material is vapor-deposited to form a second light-emitting layer 1 Form 12.

[0176] In this embodiment, the substrate 102 is supplied to a vapor deposition device, and the shadow mask 190a is placed in the vapor deposition source. Then, the opening 191 of the shadow mask 190a is The shadow mask 190a is aligned to place the opening 1 91 is provided, a metal foil having a thickness of several tens of μm or more or a metal having a thickness of several hundred μm or less It is a shielding plate formed of a plate.

[0177] The shadow mask 190a has a larger opening than the shadow mask 190 described above. The area of ​​the opening 191 is small. By reducing the area of ​​the opening 191, the shadow mask 190 The mechanical strength of the shadow mask 190a is increased, and the deflection of the shadow mask 190a is reduced. This is preferable because it improves the accuracy of the measurement.

[0178] The second light-emitting layer 112 has a spectral peak in the range of 420 nm to 480 nm. The second light-emitting material is a fluorescent material that emits blue light. The fluorescent organic compound can be used alone. However, it may be mixed with other materials and deposited. For example, a fluorescent organic compound may be used as a guest material. The guest material is dispersed in a host material having a higher excitation energy than the guest material and evaporated. You may do so.

[0179] Before forming the second light-emitting layer 112, the first light-emitting element 123R and the second light-emitting element an organic compound common to the third light-emitting element 123G, the third light-emitting element 123B, and the fourth light-emitting element 123Y; (e.g., a hole injection layer and / or a hole transport layer) may be formed on the transparent conductive film 106 .

[0180] <Third step> The third step is to form the lower electrode (transparent conductive film 106), the partition wall 108, and the second light-emitting layer 1. This is a step of forming a first light-emitting layer 110 on the substrate 12 (see FIG. 13(C)).

[0181] The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The first light-emitting material is a phosphorescent material that emits yellow light. The phosphorescent organic compound can be used alone. However, it may be mixed with other materials and deposited. For example, a phosphorescent organic compound may be used as a guest material. The guest material is dispersed in a host material having a higher excitation energy than the guest material and evaporated. You may do so.

[0182] <Fourth step> The fourth step is to form a second electrode 114, which functions as the upper electrode of the light-emitting element, on the first electrode 114. This is a step of forming the optical layer 110 (see FIG. 13(D)).

[0183] Before forming the second electrode 114, the first light emitting element 123R and the second light emitting element 123R are 23G, the third light-emitting element 123B, and the fourth light-emitting element 123Y. For example, an electron transport layer and / or an electron injection layer may be formed on the first light-emitting layer 110. .

[0184] Through the above steps, the first light emitting element 123R, the second light emitting element 123G, and the third light emitting element A fourth light emitting element 123B and a fourth light emitting element 123Y are formed on the substrate 102.

[0185] <The fifth and sixth steps> The fifth and sixth steps are the same as the fifth and sixth steps of the light emitting device 140 described above. The steps are the same as the first and sixth steps, and therefore, the explanation will be omitted here.

[0186] Through the above steps, the light-emitting device 170 shown in FIG. In this embodiment, the process of separately painting the light emitting element is performed only once for the second light emitting layer 112. As a result, it is possible to provide a method for manufacturing a light-emitting device with high productivity. It is possible to provide a method for manufacturing a novel light-emitting device in which the reduction in aperture ratio is suppressed. Thus, a novel light emitting device can be provided.

[0187] As described above, this embodiment mode can be combined with other embodiment modes as appropriate.

[0188] (Embodiment 2) In this embodiment, a structure of a light-emitting element included in a light-emitting device of one embodiment of the present invention will be described with reference to FIGS. 14 and 15(A), (B), (C), and (D) will be used below for explanation.

[0189] The light-emitting element exemplified in this embodiment has a lower electrode and a layer containing an organic compound ( The lower electrode or the upper electrode is disposed on the EL layer. One acts as an anode and the other as a cathode.

[0190] The EL layer is provided between the lower electrode and the upper electrode. Select appropriately according to the polarity and material.

[0191] The configuration of the light emitting element is exemplified below, but the configuration of the light emitting element is not limited to this.

[0192] <Configuration example of light-emitting element> An example of the configuration of a light-emitting element is shown in Fig. 14. The light-emitting element shown in Fig. 14 has an anode 1101 and a cathode A light emitting unit 1103 is sandwiched between the light emitting units 1102.

[0193] The light-emitting unit 1103 has at least one region where electrons and holes recombine. The light-emitting unit 1103 may include at least one light-emitting layer containing a light-emitting material. The layer other than the light-emitting layer may be a laminated layer. Substances with high hole injection properties, substances with high hole transport properties, substances with poor hole transport properties (blocking ) materials, materials with high electron transport properties, materials with high electron injection properties, and materials with bipolar properties (electron and A layer containing a substance having a high hole transporting property can be given as an example.

[0194] A voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102. Then, holes are injected into the light-emitting unit 1103 from the anode 1101 side, and electrons are injected from the cathode 1102 side. The injected electrons and holes are recombined in the light-emitting unit 1103, The luminescent material contained in the luminescent unit 1103 emits light.

[0195] <Light-emitting unit configuration example 1> An example of the configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 131, a hole transport layer 132, a first light-emitting layer 110, a second The light-emitting layer 112, the electron transport layer 133, and the electron injection layer 134 are arranged in this order from the anode 1101 side. It is layered.

[0196] The light-emitting unit 1103 shown in FIG. 15A is the same as the first light-emitting element shown in FIG. 4B. This corresponds to the configuration of the first light emitting element 122R, the second light emitting element 122G, and the fourth light emitting element 122Y.

[0197] The holes injected from the anode 1101 side and the electrons injected from the cathode 1102 side are The electrons recombine near the first light-emitting layer 110, and the energy of the recombination is converted into the first electrons of the first light-emitting layer 110. The luminescent material emits light.

[0198] The first light-emitting layer 110 transports holes injected from the anode side to the second light-emitting layer 112. For example, a material having excellent electron transporting properties but poor hole transporting properties, or a material having excellent electron transporting properties but poor hole transporting properties, such as HOM, is preferable. The layer containing a material whose O level is deeper than that of the second light-emitting layer 112 is called the second light-emitting layer of the first light-emitting layer 110. It may also be provided on the side in contact with layer 112.

[0199] The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The first light-emitting material is a phosphorescent material with high luminous efficiency. It is preferable that

[0200] In the configuration of the light-emitting unit 1103 shown in FIG. 15(A), the second light-emitting layer 112 The second light-emitting layer 112 does not function as a light-emitting layer but functions as an electron transport layer. Electrons injected from the 102 side are transported to the first light-emitting layer 110 .

[0201] <Light-emitting unit configuration example 2> An example of the configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 131, a hole transport layer 132, a second light-emitting layer 112, an electron transport layer 133, and a second light-emitting layer 114. A transport layer 133 and an electron injection layer 134 are stacked in this order from the anode 1101 side.

[0202] The light-emitting unit 1103 shown in FIG. 15B is the same as the third light-emitting element shown in FIG. 4B. This corresponds to the configuration of 122B.

[0203] The holes injected from the anode 1101 side and the electrons injected from the cathode 1102 side are The electrons recombine in the light-emitting layer 112, and the energy of the recombination generates a second light-emitting The material emits light.

[0204] The second light-emitting layer 112 has a spectral peak in the range of 420 nm to 480 nm. The second light-emitting material is a fluorescent material from the viewpoint of reliability. In addition, when a fluorescent material is used in the second light-emitting layer 112, the fluorescent material is preferably an It is preferable to disperse the anthracene derivative in the anthracene derivative because the anthracene derivative has high electron transport properties. Therefore, by using it in the second light-emitting layer 112, in the light-emitting unit 1103 shown in FIG. In this case, the second light-emitting layer 112 can be prevented from emitting light. The material is preferably an aromatic amine compound. Aromatic amine compounds have high hole trapping properties (positive This is because the electron transport properties of the second light-emitting layer 112 are relatively improved. As the aromatic amine compound, pyrene derivatives are particularly preferred.

[0205] In the configuration of the light-emitting unit 1103 shown in FIG. 15(B), the second light-emitting layer 112 functions as a light-emitting layer.

[0206] <Light-emitting unit configuration example 3> An example of the configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 131, a hole transport layer 132, a first light-emitting layer 110, an electron transport layer 132, and a second light-emitting layer 110. A transport layer 133 and an electron injection layer 134 are stacked in this order from the anode 1101 side.

[0207] The light-emitting unit 1103 shown in FIG. 15C is the same as the first light-emitting element shown in FIG. 8A. This corresponds to the configuration of the first light emitting element 125R, the second light emitting element 125G, and the fourth light emitting element 125Y.

[0208] The holes injected from the anode 1101 side and the electrons injected from the cathode 1102 side are The electrons recombine near the first light-emitting layer 110, and the energy of the recombination is converted into the first electrons of the first light-emitting layer 110. The luminescent material emits light.

[0209] The first light-emitting layer 110 has a spectral peak in the range of 540 nm to 580 nm. The first light-emitting material is a phosphorescent material with high luminous efficiency. It is preferable that

[0210] <Light-emitting unit configuration example 4> An example of the configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 131, a hole transport layer 132, a second light-emitting layer 112, a first The light-emitting layer 110, the electron transport layer 133, and the electron injection layer 134 are arranged in this order from the anode 1101 side. It is layered.

[0211] The light-emitting unit 1103 shown in FIG. 15(D) is the same as the third light-emitting element shown in FIG. 8(A). Equivalent to the 125B configuration.

[0212] The holes injected from the anode 1101 side and the electrons injected from the cathode 1102 side are The electrons recombine in the light-emitting layer 112, and the energy of the recombination generates a second light-emitting The material emits light.

[0213] The second light-emitting layer 112 transports holes injected from the anode side to the first light-emitting layer 110. For example, a material having excellent electron transporting properties but poor hole transporting properties, or a material having excellent electron transporting properties but poor hole transporting properties, such as HOM, is preferable. A layer containing a material whose O level is deeper than that of the first light-emitting layer 112 is called the first light-emitting layer of the second light-emitting layer 112. It may also be provided on the side in contact with layer 110 .

[0214] The second light-emitting layer 112 has a spectral peak in the range of 420 nm to 480 nm. The second light-emitting material is a fluorescent material from the viewpoint of reliability. It is preferable to have one.

[0215] In the configuration of the light-emitting unit 1103 shown in FIG. 15(D), the first light-emitting layer 110 The first light-emitting layer 110 does not function as a light-emitting layer, but functions as an electron transport layer. Electrons injected from the 102 side are transported to the second light-emitting layer 112 .

[0216] In addition, the EL layer, the upper electrode, and the lower electrode described in this embodiment are Depending on the material being used, various methods (e.g., dry method, wet method, etc.) can be used. For example, sputtering, vacuum deposition, transfer, printing (relief printing, intaglio printing, gravure printing, etc.) printing method, lithographic printing method, stencil printing method, etc.), inkjet method, coating method or spin coating method Each layer may be formed by a different method.

[0217] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. do.

[0218] (Embodiment 3) In this embodiment, an active matrix light-emitting device is used as an example of a light-emitting device according to one embodiment of the present invention. The light-emitting device of this type will be described with reference to FIG.

[0219] 16(A) is a top view showing a light-emitting device, and FIG. 16(B) is a top view showing the same as FIG. 16(A). 1 is a cross-sectional view taken along the dashed line A-A' of an active matrix type liquid crystal display device according to the present embodiment. The light emitting device includes a pixel section 302 provided on an element substrate 301 and a driving circuit section (source line driving a gate line driving circuit 303, a driving circuit section (gate line driving circuit) 304 (304a and 304b), The pixel portion 302, the driver circuit portion 303, and the driver circuit portion 304 are covered with a sealing material 305. The element substrate 301 is sealed between the element substrate 301 and the sealing substrate 306 by the sealing.

[0220] Further, on the element substrate 301, a driving circuit section 303 and a driving circuit section 304 are provided. Signals (e.g., video signals, clock signals, start signals, reset signals, etc.) and potentials A wiring 307 is provided to connect an external input terminal that transmits the signal. An example of providing an FPC (flexible printed circuit) 308 as an external input terminal is shown below. Although only the FPC is shown here, this FPC also has a printed wiring board. The light emitting device in this specification may be a light emitting device itself. This includes not only the body but also the state in which an FPC or PWB is attached to it.

[0221] Next, the cross-sectional structure will be described with reference to Fig. 16(B). A path section and a pixel section are formed, but here, a drive circuit section 30 which is a source line drive circuit is formed. 3 and pixel portion 302 are shown.

[0222] The driving circuit section 303 is exemplified by a configuration in which an FET 309 and an FET 310 are combined. The FET 309 and FET 310 in the driving circuit unit 303 are unipolar (N-type) It may be formed of a circuit including transistors of either N-type or P-type only. It may be formed of a CMOS circuit including a P-type transistor and a P-type transistor. In the embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this does not necessarily mean that It is not necessary, and the driving circuit can be formed externally instead of on the substrate.

[0223] The pixel section 302 also includes a switching FET (not shown) and a current control FET 31. 2, and the wiring (source electrode or drain electrode) of the current control FET 312 is The first electrodes (anodes) (313a, 313b) of the element 317a and the light-emitting element 317b are connected to the electrodes. In this embodiment, the pixel section 302 is provided with two FETs ( An example of a configuration using a switching FET and a current control FET (312) is shown. However, the present invention is not limited to this. For example, a configuration in which three or more FETs and a capacitance element are combined is also possible. It may also be possible to use the following.

[0224] The FETs 309, 310, and 312 may be, for example, staggered or inverted staggered transistors. Semiconductors that can be used for the FETs 309, 310, and 312 Examples of materials include Group 13 (gallium, etc.) semiconductors and Group 14 (silicon, etc.) semiconductors. Compound semiconductors, oxide semiconductors, and organic semiconductor materials can be used. The crystallinity of the material is not particularly limited, and may be, for example, an amorphous semiconductor film or a crystalline semiconductor film. In particular, the FETs 309, 310, and 312 may be made of oxide semiconductors. As the oxide semiconductor, for example, In-Ga oxide, In-Mn oxide, -Zn oxide (M is Al, Ga, Y, Zr, La, Ce, or Nd), etc. The FETs 309, 310, and 312 preferably have an energy gap of 2 eV or more. Preferably, an oxide semiconductor material with a conductivity of 2.5 eV or more, more preferably 3 eV or more, is used. Therefore, the off-state current of the transistor can be reduced.

[0225] The first electrode 313 also includes a structure in which a conductive film 320 for optical adjustment is laminated. For example, as shown in FIG. 16(B), the light emitting element 317a and the light emitting element 317b Since the wavelengths of the light are different, the conductive films 320a and 320b are formed with different film thicknesses. In addition, a partition wall 314 made of an insulating material is provided so as to cover the ends of the first electrodes (313a, 313b). Here, the partition wall 314 is formed using a positive photosensitive acrylic resin. In this embodiment, the first electrodes (313a, 313b) are used as anodes.

[0226] In addition, the partition wall 314 is formed with a curved surface at the upper or lower end thereof. By forming the partition wall 314 in the shape described above, it is possible to form a layer on the partition wall 314. For example, the partition wall 314 may be made of the following material: Either a negative photosensitive resin or a positive photosensitive resin can be used. Not limited to compounds, but also inorganic compounds, such as silicon oxide, silicon oxynitride, silicon nitride, etc. can be used.

[0227] An EL layer 315 and a second electrode 316 are stacked on the first electrodes (313a, 313b). The EL layer 315 is provided with at least a light-emitting layer, and the first electrode (3 13a, 313b), an EL layer 315, and a light-emitting element (317a, The edge of the EL layer 315 shared by the second electrode 316 and the second electrode 317b) is covered with the second electrode 316. The structure of the EL layer 315 is the same as that in the second embodiment.

[0228] The first electrode 313, the EL layer 315, and the second electrode 316 may be made of the following materials: The materials shown in Embodiment 1 can be used. The first electrodes (313a, 313b) are electrically connected to the wiring 307 in the region 321. An external signal is input via the FPC 308. The second electrode 316 (shown in 317a and 317b) is electrically connected to the wiring 323 in the region 322. Although not shown here, an external signal is input via the FPC 308.

[0229] In addition, although only two light-emitting elements 317 are shown in the cross-sectional view of FIG. 16(B), In the unit 302, a plurality of light emitting elements are arranged in a matrix as shown in the first embodiment. That is, the pixel unit 302 has four types of light emission (R, G, B, Y). and forming a light-emitting device capable of full color display. can.

[0230] Furthermore, by bonding the sealing substrate 306 to the element substrate 301 with the sealing material 305, The light is emitted into a space 318 surrounded by the element substrate 301, the sealing substrate 306, and the sealant 305. The structure is provided with element 317.

[0231] The sealing substrate 306 is provided with optical elements 324, and the optical elements 324 are spaced apart from each other. A light-shielding layer 325 is provided on the light-emitting elements 317a and 317b. The light is extracted to the outside via the optical element 324 .

[0232] The space 318 may be filled with an inert gas (nitrogen, argon, etc.) or may be sealed. This also includes a configuration filled with a solid such as material 305.

[0233] It is also preferable to use epoxy resin or glass frit for the sealing material 305. In addition, it is desirable that these materials be as impermeable to moisture and oxygen as possible. The sealing substrate 306 may be made of glass or quartz, or may be made of FRP (Fiber-Reinforced Plastic). Reinforced Plastics), PVF (Polyvinyl Fluoride), Polyethylene A plastic substrate made of stainless steel, acrylic, or the like can be used as a sealing material. When glass frit is used, the element substrate 301 and the sealing substrate 302 are preferably bonded to each other from the viewpoint of adhesiveness. 6 is preferably a glass substrate.

[0234] In this manner, an active matrix light emitting device can be obtained. As the optical device, a passive matrix to which a light-emitting element having the element structure shown in Embodiment 1 is applied is used. It is also possible to fabricate a risk-type light-emitting device.

[0235] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. You can be there.

[0236] (Fourth embodiment) In this embodiment, various electronic devices completed using a light-emitting device which is one embodiment of the present invention will be described. An example of this will be described with reference to FIG.

[0237] Examples of electronic devices to which light-emitting devices are applied include television sets (television sets, or television sets (also known as TV receivers), computer monitors, digital cameras, digital video digital cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), Examples include portable game machines, personal digital assistants, sound players, and large game machines such as pachinko machines. It can be obtained.

[0238] FIG. 17(A) shows an example of a television device. The television device 7100 is A display unit 7103 is incorporated in the housing 7101. The display unit 7103 displays an image. A light-emitting device can be used for the display portion 7103. 7 shows a configuration in which a housing 7101 is supported by a stand 7105.

[0239] The television device 7100 can be operated using an operation switch provided on the housing 7101 or a separate remote control. This can be done by using the remote control operation device 7110. The channel and volume can be controlled by the -7109, and the information displayed on the display 7103 In addition, the remote control unit 7110 can be used to control the video. A display unit 7107 for displaying information output from the device 7110 may be provided.

[0240] The television device 7100 includes a receiver, a modem, and the like. It is possible to receive general television broadcasts by this, and furthermore, it is possible to receive television broadcasts by wired or wireless via a modem. By connecting to a communication network, it is possible to communicate in one direction (from sender to receiver) or two directions ( It is also possible to communicate information between a sender and a receiver, or between receivers.

[0241] FIG. 17B shows a computer, which includes a main body 7201, a housing 7202, a display unit 7203, It includes a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. Note that the computer is manufactured by using a light-emitting device for the display portion 7203. It is possible.

[0242] FIG. 17C shows a wristwatch-type information terminal, which includes a housing 7302, a display panel 7304, an operation panel 7306, and a touch panel 7308. Buttons 7311, 7312, connection terminals 7313, bands 7321, clasps 7322, etc. Has.

[0243] The display panel 7304 mounted on the housing 7302, which also serves as a bezel, is a non-rectangular display panel. The display panel 7304 has an icon 7305 that indicates the time, other icons, Con7306 etc. can be displayed.

[0244] The wristwatch-type information terminal shown in FIG. 17(C) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Sensor function, calendar, date or time display function, various software (programs) The function of controlling processing by the program, wireless communication function, and various computer Functions for connecting to computer networks, and for transmitting or receiving various data using wireless communication functions. The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. It may have the function of indicating, etc.

[0245] In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angle) Speed, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, Includes functions to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays The wristwatch type information terminal may have a light emitting device, a microphone, etc. The display panel 7304 can be manufactured by using the above.

[0246] FIG. 17(D) shows an example of a mobile phone (including a smartphone). The device 7400 includes a housing 7401, a display unit 7402, a microphone 7406, a speaker 7405, It is equipped with a camera 7407, an external connection section 7404, operation buttons 7403, etc. When a light-emitting element according to one embodiment of the present invention is formed over a flexible substrate to manufacture a light-emitting device, In this case, it can be applied to a display portion 7402 having a curved surface as shown in FIG. .

[0247] In a mobile phone 7400 shown in FIG. 17D, when a user touches the display portion 7402 with a finger or the like, You can input information, make calls, write emails, etc. This can be done by touching the display portion 7402 with a finger or the like.

[0248] The screen of the display unit 7402 has three main modes. The first is a mode that mainly displays images. The first mode is a display mode, and the second mode is an input mode that mainly inputs information such as characters. This is a display + input mode that combines the display mode and the input mode.

[0249] For example, when making a call or creating an email, the display portion 7402 is used for inputting characters. In this case, you can input characters displayed on the screen. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402. Desirable.

[0250] In addition, a detection device such as a gyro sensor or an acceleration sensor is provided inside the mobile phone 7400. By doing so, the orientation of the mobile phone 7400 (portrait or landscape) is determined and the screen display of the display unit 7402 is displayed. The display can be switched automatically.

[0251] The screen mode can be switched by touching the display portion 7402 or operating the housing 7401. This is done by operating the action button 7403. Also, the type of image displayed on the display unit 7402 can be changed. For example, the image signal to be displayed on the display unit may be switched depending on the type. If it is image data, the mode is switched to display mode, and if it is text data, the mode is switched to input mode.

[0252] In the input mode, a signal detected by the optical sensor of the display unit 7402 is detected and displayed. If there is no input by touch operation on the display unit 7402 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0253] The display portion 7402 can also function as an image sensor. By touching 402 with the palm or fingers and capturing an image of the palm print, fingerprint, etc., personal authentication can be performed. In addition, a backlight that emits near-infrared light to the display unit or a sensing light that emits near-infrared light By using a source, it is also possible to image finger veins, palm veins, etc.

[0254] Furthermore, as another configuration of a mobile phone (including a smartphone), FIG. 17(D'-1) It can also be applied to a mobile phone having a structure such as that shown in FIG. 17(D'-2).

[0255] In addition, when the structure shown in Figure 17(D'-1) or Figure 17(D'-2) is present, the character Information and image information are stored on the first surface 7501(1) and the second surface 7502(2) of the housing 7500(1) and the housing 7500(2). It can be displayed not only on 501(2) but also on the second side 7502(1) and 7502(2). This structure allows the mobile phone to be stored in a breast pocket without needing to be opened. In this state, text information and image information displayed on the second side 7502(1), 7502(2), etc. The user can easily check this.

[0256] 18(A) to 18(C) show a foldable mobile information terminal 9310. FIG. 18(A) shows the mobile information terminal 9310 in an unfolded state. indicates a mobile information terminal 9310 in a state in which it is changing from one folded state to the other. FIG. 18C shows the portable information terminal 9310 in a folded state. The 0 offers excellent portability when folded and a seamless, large display area when unfolded. The display is easy to see depending on the area.

[0257] The display panel 9311 is supported by three housings 9315 connected by hinges 9313. The hinge 9313 allows the two housings 9315 to bend, making it portable. The information terminal 9310 can be reversibly transformed from an unfolded state to a folded state. The light-emitting device of one embodiment of the present invention can be used for the display panel 9311.

[0258] As described above, an electronic device can be obtained by applying the light-emitting device which is one embodiment of the present invention. The electronic devices to which the present invention can be applied are not limited to those shown in this embodiment, but can be applied to electronic devices in any field. The present invention can be applied to the following electronic devices.

[0259] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. You can be there.

[0260] (Embodiment 5) In this embodiment, an example of a lighting device to which a light-emitting device according to one embodiment of the present invention is applied will be described. This will be explained using FIG.

[0261] FIG. 19 shows an example in which the light emitting device is used as an indoor lighting device 8001. Since the surface area can be increased, a large-area lighting device can be formed. By using a housing having the above structure, a lighting device 8002 having a curved light-emitting area can be formed. The light-emitting element included in the light-emitting device shown in this embodiment mode is a thin film, and the design of the housing Therefore, it is possible to create lighting devices with a wide variety of elaborate designs. Furthermore, a large lighting device 8003 may be provided on the wall of the room. Touch sensors are provided on 01, 8002, and 8003 to turn the power of the light-emitting device on or off. may be performed.

[0262] In addition, by using a light emitting device on the surface of a table, it is possible to make a lighting device that functions as a table. The lighting device 8004 can be used as a lighting device. This allows the lighting device to function as furniture.

[0263] As described above, various lighting devices using the light-emitting device can be obtained. is included in one aspect of the present invention.

[0264] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. You can be there. [Explanation of symbols]

[0265] 100 Light-emitting device 100A light emitting device 100B Light-emitting device 101B pixels 101G pixels 101R pixels 101Y pixels 102 Circuit Board 104 Electrode 106 Transparent conductive film 106B Transparent conductive film 106G Transparent conductive film 106R Transparent conductive film 106Y transparent conductive film 108 Bulkhead 110 Light-emitting layer 112 Light-emitting layer 114 Electrode 120B Light-emitting element 120G light emitting element 120R light emitting element 120Y light emitting element 121B Light-emitting element 121G Light-emitting element 121R light-emitting element 121Y light-emitting element 122B Light-emitting element 122G light emitting element 122R light-emitting element 122Y light-emitting element 123B Light-emitting element 123G Light-emitting element 123R light-emitting element 123Y light-emitting element 124B Light-emitting element 124G light emitting element 124R light-emitting element 124Y light-emitting element 125B Light-emitting element 125G light emitting element 125R light emitting element 125Y light emitting element 131 Hole injection layer 132 Hole transport layer 133 Electron transport layer 134 Electron injection layer 140 Light-emitting device 140A Light Emitting Device 140B Light-emitting device 152 PCB 154 Light blocking layer 156B Optical Elements 156G Optical Element 156R Optical Element 156Y Optical Elements 160 Light-emitting device 160A Light Emitting Device 160B Light-emitting device 170 Light-emitting device 170A Light Emitting Device 170B Light-emitting device 170C Light-emitting device 170D Light-emitting device 190 Shadow Mask 190a Shadow Mask 191 Opening 192 Organic compounds 193 Organic compounds 301 Element substrate 302 Pixel section 303 Drive circuit section 304 Drive circuit section 305 Sealing material 306 Sealing substrate 307 Wiring 308 FPC 309 FET 310 FET 312 FET 313 Electrode 314 Bulkhead 315 EL layer 316 Electrode 317 Light-emitting element 317a Light-emitting element 317b Light-emitting element 318 Space 320 Conductive Film 320a Conductive film 320b Conductive film 321 areas 322 areas 323 Wiring 324 Optical Elements 325 Light blocking layer 1101 Anode 1102 Cathode 1103 Lighting unit 7100 Television equipment 7101 Housing 7103 Display section 7105 Stand 7107 Display section 7109 Operation key 7110 Remote control device 7201 Main unit 7202 Case 7203 Display section 7204 keyboard 7205 External connection port 7206 Pointing Device 7302 Housing 7304 Display Panel 7305 Icon 7306 Icons 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Gold 7400 mobile phone 7401 Housing 7402 Display section 7403 Operation buttons 7404 External connection part 7405 Speaker 7406 Microphone 7407 Camera 7500 chassis 7501 sides 7502 faces 8001 Lighting equipment 8002 Lighting equipment 8003 Lighting equipment 8004 Lighting equipment 9310 Mobile Information Terminal 9311 Display Panel 9313 Hinge 9315 chassis

Claims

1. a first substrate; a transistor, a first light-emitting element, a second light-emitting element, a partition wall, and wiring, which are provided on the first substrate; a second substrate; a color conversion layer and a light-shielding layer provided on the second substrate; the first light-emitting element and the second light-emitting element each have a lower electrode, an upper electrode, and a layer containing an organic compound provided between the lower electrode and the upper electrode; the partition wall is provided to cover an end portion of the lower electrode, the layer containing an organic compound has a first light-emitting layer containing a fluorescent substance and a second light-emitting layer containing a phosphorescent substance, the color conversion layer is disposed between the first light-emitting element and the second substrate; the light from the second light-emitting element is emitted without passing through a color conversion layer; the transistor is connected to the first light-emitting element, the transistor includes an oxide semiconductor material; the wiring is connected to the upper electrode in a region where the partition is not provided, a region facing the light-shielding layer, and a region where the wiring does not overlap with the color conversion layer.

2. In claim 1, The wiring is connected to the upper electrode in a region that does not overlap with the transistor.

3. a first substrate; a first transistor, a second transistor, a first light-emitting element, a second light-emitting element, a partition wall, and wiring, which are provided on the first substrate; a second substrate; a color conversion layer and a light-shielding layer provided on the second substrate; the first light-emitting element and the second light-emitting element each have a lower electrode, an upper electrode, and a layer containing an organic compound provided between the lower electrode and the upper electrode; the partition wall is provided to cover an end portion of the lower electrode, the layer containing an organic compound has a first light-emitting layer containing a fluorescent substance and a second light-emitting layer containing a phosphorescent substance, the color conversion layer is disposed between the first light-emitting element and the second substrate; the light from the second light-emitting element is emitted without passing through a color conversion layer; the first transistor is connected to the first light-emitting element; the second transistor is connected to the second light-emitting element, the first transistor and the second transistor include an oxide semiconductor material; the wiring is connected to the upper electrode in a region where the partition is not provided, a region facing the light-shielding layer, and a region where the wiring does not overlap with the color conversion layer.

4. In claim 2, The wiring is connected to the upper electrode in a region that does not overlap with the first transistor and in a region that does not overlap with the second transistor.

Images