Display device

Abstract

To provide a display device having light detection function.SOLUTION: The display device includes a first pixel and a second pixel. The first pixel has a first sub-pixel and a second sub-pixel. The second pixel has a third sub-pixel. The first sub-pixel is a sub-pixel emitting the shortest wavelength light (for example, blue light or light of shorter wavelength than blue light) in the sub-pixels included in the first pixel. The second sub-pixel has a function of receiving light emitted by the first sub-pixel. The third sub-pixel is a sub-pixel emitting the shortest wavelength in the sub-pixels included in the second pixel. A wavelength of light emitted by the first sub-pixel is shorter than a wavelength of light emitted by the third sub-pixel.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. has a light receiving device (also called a light receiving element) and a light emitting device (also called a light emitting element) One embodiment of the present invention relates to a display device. The present invention relates to a display device having a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called televisions or television receivers), digital Digital Signage, PID (Public Identification Number) c Information Display) and other mobile information terminals. As a result, development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Electroluminescence (hereinafter referred to as EL) phenomenon The light-emitting devices used (also called EL devices or EL elements) can be easily made thin and lightweight. It has the following characteristics: it can respond quickly to input signals, and it can be driven using a low-voltage DC power supply. For example, Patent Document 1 discloses an organic EL device (organic A flexible light-emitting device using a light-emitting diode (EL element) is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function. An object of one embodiment of the present invention is to improve the resolution of a display device having a light detection function. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of the present invention is to provide a multifunctional display device. An object of one embodiment of the present invention is to provide a novel display device. One of our goals is to provide

[0007] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0008] A display device according to one embodiment of the present invention includes a first pixel and a second pixel. The pixel has a first subpixel and a second subpixel. The second pixel has a third subpixel. The pixel emits light with the shortest wavelength (for example, blue light, or The second subpixel is a subpixel that emits light with a wavelength shorter than that of blue. The third sub-pixel has a function of receiving light that is incident on the second pixel. The wavelength of the light emitted by the first subpixel is shorter than that of the third subpixel. It is shorter than the wavelength of the light it emits.

[0009] Alternatively, a display device according to one embodiment of the present invention includes a first pixel, a second pixel, and a third pixel. The first pixel has a first sub-pixel, and the second pixel has a second sub-pixel. The third pixel has a third sub-pixel. The first sub-pixel has a sub-pixel included in the first pixel. The second subpixel is the subpixel that emits light with the shortest wavelength. The third sub-pixel has the function of receiving light. The wavelength of light emitted by the first subpixel is the wavelength of light emitted by the third subpixel. It is shorter than the wavelength of light.

[0010] The first subpixel preferably has a first light-emitting device. The third subpixel preferably has a second light-emitting device. Preferably, the light emitting device comprises a first light emitting device that enhances light of a first wavelength. The second light emitting device preferably has a microcavity structure. It is preferable to have a microcavity structure that enhances the light. It is preferable that the length is shorter than .

[0011] Alternatively, the first subpixel preferably includes a first light-emitting device and a colored layer. The third subpixel preferably has a second light-emitting device. The colored layer preferably overlaps the light-emitting region of the first light-emitting device. The first light-emitting device and the second light-emitting device preferably have a function of partially absorbing the light. and preferably have the same light-emitting layer.

[0012] Alternatively, the first subpixel preferably has a first light-emitting device. The first light-emitting device preferably has a first light-emitting layer and a second light-emitting device. The second light-emitting device preferably has a second light-emitting layer. The first light-emitting device preferably emits light of a shorter wavelength than the second light-emitting device. stomach.

[0013] The second subpixel is a light-receiving device that receives the light emitted by the first subpixel and converts it into an electrical signal. It is preferable to have

[0014] Alternatively, the second subpixel preferably includes a light-receiving and light-emitting device. It is preferable that the first sub-pixel has a function of emitting light having a longer wavelength than the light emitted by the first sub-pixel. The device has a function of receiving light emitted by the first subpixel and converting it into an electrical signal. preferable.

[0015] The third sub-pixel preferably emits blue light. The first sub-pixel preferably emits blue light, or It is preferable to emit light with a wavelength shorter than blue.

[0016] One aspect of the present invention is a display device having any of the above configurations, board (Flexible Printed Circuit, hereinafter referred to as FPC) or is equipped with a connector such as TCP (Tape Carrier Package) Module, or COG (Chip On Glass) or COF (Chi These are modules in which integrated circuits (ICs) are mounted using methods such as the MOS p On Film method.

[0017] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. [Effects of the Invention]

[0018] According to one embodiment of the present invention, a display device having a light detection function can be provided. This allows the resolution of a display device having a light detection function to be improved. According to one embodiment of the present invention, a multifunctional display device can be provided. According to one embodiment of the present invention, a display device with a high aperture ratio can be provided. Thus, a novel display device can be provided.

[0019] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0020] [Figure 1] 1A to 1D and 1F are cross-sectional views showing an example of a display device. Figs. 1E and 1G are diagrams showing examples of images captured by the display device. Figs. 1H and 1J to 1L are top views showing examples of pixels. [Figure 2] 2A to 2G are top views showing examples of pixels. [Figure 3] 3A and 3B are diagrams illustrating an example of a method for driving a display device. [Figure 4] 4A to 4F are diagrams illustrating an example of a method for driving a display device. [Figure 5] 5A and 5B are cross-sectional views showing an example of a display device. [Figure 6] FIG. 6 is a cross-sectional view showing an example of a display device. [Figure 7] 7A to 7C are cross-sectional views showing an example of a display device. [Figure 8] 8A and 8B are cross-sectional views showing an example of a display device, and Figs. 8C to 8F are cross-sectional views showing an example of a light emitting and receiving device. [Figure 9] Fig. 9A is a diagram showing an example of a method for driving a display device, and Fig. 9B and Fig. 9C are diagrams illustrating the time integral value of pixel luminance. [Figure 10] Fig. 10A is a diagram showing an example of a method for driving a display device, and Fig. 10B is a diagram illustrating the time integral value of pixel luminance. [Figure 11] FIG. 11 is a diagram showing an example of a method for driving a display device. [Figure 12] 12A to 12C are cross-sectional views showing an example of a display device. [Figure 13] Fig. 13A is a cross-sectional view showing an example of a display device, and Fig. 13B and Fig. 13C are diagrams showing an example of an upper surface layout of a resin layer. [Figure 14] FIG. 14 is a perspective view showing an example of a display device. [Figure 15] 15A and 15B are cross-sectional views showing an example of a display device. [Figure 16] FIG. 16 is a cross-sectional view showing an example of a display device. [Figure 17] 17A is a cross-sectional view showing an example of a display device, and FIG 17B is a cross-sectional view showing an example of a transistor. [Figure 18] 18A to 18C are circuit diagrams showing examples of pixel circuits. [Figure 19]19A and 19B are diagrams showing an example of an electronic device. [Figure 20] 20A to 20D are diagrams showing examples of electronic devices. [Figure 21] 21A to 21F are diagrams showing examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0023] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0024] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0025] In this specification and the like, unless otherwise specified, elements (pixels, light-emitting devices, light-emitting layers, etc.) Even when explaining a configuration that has multiple elements (e.g., a product, a service, a service), explain the matters common to each element. In this case, the alphabet will be omitted. For example, pixel 300a and pixel 300b When explaining matters common to the above, the pixel may be referred to as pixel 300.

[0026] (Embodiment 1) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0027] A display device according to one embodiment of the present invention includes a first pixel and a second pixel. The pixel has a first subpixel and a second subpixel. The second pixel has a third subpixel. The pixel is a sub-pixel that emits light with the shortest wavelength among the sub-pixels included in the first pixel. The second sub-pixel has a function of receiving light emitted by the first sub-pixel. The first subpixel is the subpixel that emits light with the shortest wavelength among the subpixels included in the pixel. The wavelength of the emitted light is shorter than the wavelength of the light emitted by the third sub-pixel.

[0028] Alternatively, a display device according to one embodiment of the present invention includes a first pixel, a second pixel, and a third pixel. The first pixel has a first sub-pixel, and the second pixel has a second sub-pixel. The third pixel has a third sub-pixel. The first sub-pixel has a sub-pixel included in the first pixel. The second subpixel is the subpixel that emits light with the shortest wavelength. The third sub-pixel has the function of receiving light. The wavelength of light emitted by the first subpixel is the wavelength of light emitted by the third subpixel. It is shorter than the wavelength of light.

[0029] The wavelength of the light emitted by the first sub-pixel is shorter than the wavelength of the light emitted by the third sub-pixel. The light emitted by the first sub-pixel is hardly visible to the user of the display device, and the change in the amount of light is small. The change is difficult for users to recognize.

[0030] In the display device of one embodiment of the present invention, at least some of the pixels have a light-receiving function, and therefore, For example, the display device may have a Not only do all the sub-pixels display an image, but some of the sub-pixels also emit light as a light source and remain In this case, the sub-pixels used as the light source are the above-mentioned By using the first subpixel, the light from the light source becomes less visible to the user, resulting in a natural image. Image display can be performed.

[0031] The first and third subpixels preferably have light-emitting devices. , a light receiving device, or a light emitting / receiving device.

[0032] First, a display device having a light receiving device and a light emitting device will be described.

[0033] A display device according to one embodiment of the present invention includes a light-receiving device and a light-emitting device. The display device has a display section in which light-emitting devices are arranged in a matrix. The display unit can display an image. The display unit has light receiving devices arranged in a matrix. The display unit has an image display function as well as either an imaging function or a sensing function. The display unit can be used as an image sensor or a touch sensor. By detecting light on the display, it is possible to capture images and measure the distance between objects (finger, pen, etc.). The display device of one embodiment of the present invention can detect proximity or contact. The device can be used as a light source for the sensor. This eliminates the need for a light source and reduces the number of components in the electronic device.

[0034] In the display device of one embodiment of the present invention, light emitted from a light-emitting device included in a display portion is reflected by an object. When the reflected light (or scattered light) is reflected (or scattered), the light receiving device can detect the reflected light (or scattered light), Capturing images and detecting touches are possible even in dark places.

[0035] A display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting device. That is, the light-emitting device functions as a display device (also called a display element).

[0036] As a light-emitting device, OLED (Organic Light Emitting Diode) iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL device such as an EL device. These include fluorescent materials, phosphorescent materials, and inorganic compounds ( quantum dot materials), materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence lly Activated Delayed Fluorescence (TADF) In addition, light-emitting devices include micro LEDs (Light E Alternatively, an LED such as a light emitting diode (LED) can be used.

[0037] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving device.

[0038] When the light receiving device is used as an image sensor, the display device receives an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner. This can be done.

[0039] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By incorporating a biometric authentication sensor into the device, it is possible to provide a biometric authentication sensor separately from the display device. Compared to the conventional method, the number of parts in an electronic device can be reduced, making it possible to make the electronic device smaller and lighter. do.

[0040] Furthermore, when the light receiving device is used as a touch sensor, the display device uses the light receiving device to The proximity or contact of an object can be detected.

[0041] As the light receiving device, for example, a pn-type or pin-type photodiode is used. The light-receiving device is a photoelectric converter that detects the light incident on the device and generates an electric charge. It functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects the amount of light incident on the light receiving device. The amount of charge generated by the light-receiving device is determined based on this.

[0042] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving device. The organic photodiode can be easily made thin, lightweight, and large in area. Furthermore, since there is a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0043] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and a An organic photodiode is used. The organic EL device and the organic photodiode are made of the same substrate. Therefore, it is possible to form an organic film on a display device using an organic EL device. A photodiode can be built in.

[0044] When trying to create all the layers that make up an organic EL device and an organic photodiode, The organic photodiode has the same structure as the organic EL device. Since there are many layers that can be combined, layers that can have a common configuration can be formed in one go, reducing the number of film formation processes. can be suppressed.

[0045] For example, one of the pair of electrodes (common electrode) may be shared by the light receiving device and the light emitting device. In addition, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron It is preferable that at least one of the injection layers is a layer common to the light receiving device and the light emitting device. Furthermore, for example, the light-receiving device may have an active layer and the light-emitting device may have a light-emitting layer. The light receiving device and the light emitting device may have the same configuration. A light-receiving device can also be fabricated by simply replacing the light-emitting layer of the device with an active layer. As described above, the light-receiving device and the light-emitting device have a common layer, so that the number of film formation times and the mass The number of blocks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. In addition, a display device having a light receiving device can be manufactured using an existing manufacturing apparatus and manufacturing method for a display device. It is possible to create a device.

[0046] The layers that are common to the light-receiving device and the light-emitting device have different functions depending on whether they are light-emitting devices or receiving devices. In this specification, the function of the light emitting device may be different from that of the light emitting device. Components are named based on their function. For example, a hole injection layer is a layer that It functions as an injection layer in a light-receiving device and as a hole transport layer in a light-receiving device. The doping layer functions as an electron injection layer in a light-emitting device and an electron transport layer in a light-receiving device. The layer that is common to the light-receiving device and the light-emitting device functions as a layer. In some cases, the hole transport layer has the same function in the light receiving device as in the light receiving device. In both light-emitting and light-receiving devices, it functions as a hole transport layer and an electron transport layer. The layer functions as an electron transport layer in both light-emitting and light-receiving devices.

[0047] Next, a display device having a light emitting and receiving device and a light emitting device will be described.

[0048] In the display device according to one embodiment of the present invention, a subpixel that exhibits any color is provided with a light-emitting device instead of a light-emitting device. The light receiving and emitting device has a function of emitting light (light emitting function) and a function of receiving light (light receiving function). It has both the function of detecting the incident light and converting it into an electrical signal (light receiving function). If a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, At least one subpixel has a light-receiving device, and the other subpixels have light-emitting devices. The light receiving and emitting device functions as both a light emitting device and a light receiving device, so that the This allows the pixel to have a light-receiving function without increasing the number of sub-pixels. While maintaining the original aperture ratio (aperture ratio of each sub-pixel) and the definition of the display device, The display unit can be provided with either or both of an imaging function and a sensing function.

[0049] In a display device according to one embodiment of the present invention, a display portion includes a light-emitting and receiving device and a light-emitting device arranged in matrix. The display unit is arranged on the display unit, and an image can be displayed on the display unit. The display device of one embodiment of the present invention can be used as a light-emitting device. Therefore, the chair can be used as a light source for the sensor. This eliminates the need for a light source and reduces the number of components in the electronic device.

[0050] In the display device of one embodiment of the present invention, light emitted from a light-emitting device included in a display portion is reflected by an object. When the light is reflected (or scattered), the light-receiving device can detect the reflected (or scattered) light. It is possible to capture images and detect touches even in dark places.

[0051] The light-emitting and receiving device can be fabricated by combining an organic EL device and an organic photodiode. For example, the active layer of an organic photodiode can be integrated into the stacked structure of an organic EL device. By adding this, it is possible to create a light-receiving device. Light-emitting and receiving devices made by combining organic photodiodes are also used in organic EL devices. By forming layers that can be used in the same configuration at once, it is possible to suppress an increase in the number of film formation steps.

[0052] For example, one of the pair of electrodes (common electrode) is shared by the light emitting and receiving device and the light emitting device. For example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron transport layer may be used. At least one of the electron injection layers may be a layer common to the light receiving and emitting device. Furthermore, for example, the light receiving and emitting devices are different from each other except for the presence or absence of an active layer in the light receiving device. In other words, the light-emitting device can be made to have the same structure as the light-receiving device. By simply adding a conductive layer, a light-emitting / receiving device can be fabricated. The number of film depositions and masks can be reduced by having common layers for the substrate and the light-emitting device. This allows the manufacturing process and manufacturing costs of the display device to be reduced. To manufacture a display device having a light emitting / receiving device using existing manufacturing equipment and manufacturing methods. can be done.

[0053] The layers of the light-receiving and light-emitting device are formed in the following manner when the light-receiving and light-emitting device functions as a light-receiving device: The function may differ depending on whether the device functions as a light-emitting device or not. The components are determined based on the function when the light emitting / receiving device functions as a light emitting device. For example, the hole injection layer is used to form a hole when the light emitting / receiving device functions as a light emitting device. functions as a hole injection layer, and when the light emitting / receiving device functions as a light receiving device, Similarly, the electron injection layer functions as a hole transport layer. When the light emitting / receiving device functions as a light receiving device, it functions as an electron injection layer. When the light emitting / receiving device is used, the layer functions as an electron transport layer. The device functions as a light-receiving device and a light-emitting device. The functions may be the same. The hole transport layer may be used in both light-emitting and light-receiving devices. Even when the layer functions as a hole transport layer, the layer functions as an electron transport layer. In both the case where the device functions as a light-receiving device and the case where the device functions as a light-transporting layer, the layer functions as an electron transporting layer.

[0054] The display device of this embodiment mode displays an image using a light-emitting device and a light-receiving and light-emitting device. In other words, the light-emitting device and the light-receiving and light-emitting device function as a display device. do.

[0055] The display device of this embodiment mode has a function of detecting light using a light-emitting and receiving device. The optical device can detect light with a shorter wavelength than the light emitted by the light-receiving device itself. .

[0056] When the light emitting and receiving device is used as an image sensor, the display device of this embodiment For example, the display device of this embodiment can capture an image. It can be used as a scanner.

[0057] Furthermore, when the light emitting and receiving device is used as a touch sensor, the display device of the present embodiment The device can be used to detect the proximity or contact of an object.

[0058] The light-emitting / receiving device is a photoelectric conversion device that detects light incident on the device and generates an electric charge. The light emitted from the light emitting / receiving device is measured based on the amount of light incident on the device. The amount of charge is determined.

[0059] The light-receiving and light-emitting device is formed by adding an active layer of a light-receiving device to the configuration of the light-emitting device. It can be made.

[0060] For example, a pn-type or pin-type photodiode structure is applied to the light-receiving and light-emitting device. It is possible.

[0061] In particular, the light-receiving and light-emitting device may include an active layer of an organic photodiode having a layer containing an organic compound. It is preferable to use an organic photodiode. The organic photodiode can be easily made thin, lightweight, and large in area. Since the device is easy to manufacture and has a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0062] The display device of one embodiment of the present invention will be described in more detail below with reference to the drawings.

[0063] [Display device] 1A to 1D and 1F each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0064] The display device 200A shown in FIG. 1A has a light-receiving device between a substrate 201 and a substrate 209. The light-emitting device 200 includes a layer 203 having a light-emitting device, a functional layer 205, and a layer 207 having a light-emitting device.

[0065] The display device 200A emits red (R), green (G), and The configuration is such that blue (B) light is emitted.

[0066] The light receiving devices included in the layer 203 having the light receiving devices are visible from the outside of the display device 200A. It is possible to detect incident light.

[0067] The display device 200B shown in FIG. 1B has a light emitting and receiving device between a substrate 201 and a substrate 209. The optical fiber 200 includes a layer 204 having a light-emitting device, a functional layer 205, and a layer 207 having a light-emitting device.

[0068] The display device 200B emits green (G) light and blue (B) light from the layer 207 having the light-emitting devices. ) light is emitted from the layer 201 having the light receiving and emitting device, and red (R) light is emitted from the layer 204 having the light receiving and emitting device. Note that in the display device of one embodiment of the present invention, the layer 204 having the light-emitting and receiving devices The color of the light emitted by the layer 207 having the light-emitting device is not limited to red. The color of the light is not limited to a combination of green and blue.

[0069] The light emitting and receiving devices included in the layer 204 having the light emitting and receiving devices are external to the display device 200B. The light receiving and emitting device can detect light incident from, for example, green light and It can detect either or both of the blue and blue lights.

[0070] The functional layer 205 includes a circuit for driving the light receiving device or the light emitting / receiving device, and a circuit for driving the light emitting device. The functional layer 205 includes a switch, a transistor, a capacitor, a resistor, and a circuit for driving the switch. Wiring, terminals, etc. can be provided. When driving with a matrix system, it is possible to use a configuration without switches or transistors. good.

[0071] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger that is in contact with the display device ( For example, as shown in FIG. 1C, The light emitted by the light emitting device in the layer 207 having the device is guided to the surface of the display device 200A. The light receiving device in the layer 203 having the light receiving device is reflected by the finger 202. This allows the touch of the finger 202 on the display device 200A to be detected. In the display device 200B, the layer 207 having the light-emitting device The light emitted by the light-emitting device is reflected by a finger touching the display device 200B, and the light is received by the light-emitting device. The light receiving and emitting devices in the layer 204 having the devices can detect the reflected light. In the following, an example will be described in which light emitted from a light-emitting device is reflected by an object. However, light may also be scattered by the object.

[0072] The display device according to one embodiment of the present invention is in close proximity to (in contact with) the display device, as shown in FIG. 1D. The sensor may have the function of detecting or capturing an object (not shown).

[0073] The display device of one embodiment of the present invention may have a function of detecting a fingerprint of a finger 202. FIG. 1E shows an image captured by a display device according to one embodiment of the present invention. Within the range 263, the outline of the finger 202 is indicated by a dashed line, and the outline of the contact part 261 is indicated by a dashed line. In the contact portion 261, the difference in the amount of light incident on the light receiving device (or light emitting / receiving device) This allows a high-contrast image of the fingerprint 262 to be captured.

[0074] The display device of one embodiment of the present invention can also function as a pen tablet. In this case, the tip of the stylus 208 is brought into contact with the substrate 209 and slid in the direction of the dashed arrow. This shows how the device is being used.

[0075] As shown in FIG. 1F, scattering light is scattered at the contact surface between the tip of the stylus 208 and the substrate 209. The light is incident on the layer 203 having a light receiving device located in an area overlapping the contact surface. Therefore, the position of the tip of the stylus 208 can be detected with high accuracy.

[0076] FIG. 1G shows an example of a trajectory 266 of a stylus 208 detected by a display device according to one embodiment of the present invention. The display device according to one aspect of the present invention is capable of detecting an object such as a stylus 208 with high positional accuracy. Position detection is possible, allowing high-resolution drawing in drawing applications, etc. It is also possible to use a capacitance type touch sensor or an electromagnetic induction type touch pen. Unlike the conventional method, it is possible to detect the position of highly insulating objects, so the stylus The material of the tip of the 208 does not matter, and it can be used with various writing implements (e.g., brushes, glass pens, quills, etc.) ) can also be used.

[0077] [Pixels] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. The pixel has multiple sub-pixels. One sub-pixel contains one light-emitting device and one light-receiving / light-emitting device. or one light receiving device.

[0078] Each of the plurality of pixels includes a sub-pixel having a light-emitting device, a sub-pixel having a light-receiving device, and one or more of the sub-pixels having a light emitting / receiving device.

[0079] For example, a pixel may have multiple (e.g., three or four) subpixels each having a light-emitting device; It has one sub-pixel having a light receiving device.

[0080] The light receiving device may be provided in all pixels or in some pixels. Also, one pixel may have multiple light receiving devices. The optical device may be provided across multiple pixels. The devices may have different resolutions.

[0081] When a pixel has three sub-pixels each having a light-emitting device, the three sub-pixels are R, Three sub-pixels of G and B, and three sub-pixels of yellow (Y), cyan (C), and magenta (M) When a pixel has four sub-pixels each having a light-emitting device, the four sub-pixels The pixels are divided into four sub-pixels of R, G, B, and white (W), and four sub-pixels of R, G, B, and Y. Examples include:

[0082] 1H, 1J, 1K, and 1L show a multi-pixel structure having a light-emitting device and a light-receiving device. 1 shows an example of a pixel having one sub-pixel having a channel. The arrangement is not limited to the order shown in the figure. For example, the positions of the subpixels (B) and (G) can be reversed. It's okay to do so.

[0083] The pixels shown in FIGS. 1H, 1J, and 1K each include a sub-pixel (PD) having a light-receiving function, a red A sub-pixel (R) that emits green light, a sub-pixel (G) that emits blue light, and a sub-pixel (C) that emits red light. It has a sub-pixel (B).

[0084] The pixel shown in FIG. 1H is a matrix array, and the pixel shown in FIG. 1J is a strip array. In addition, Figure 1K shows a red light-emitting sub-pixel (R ), a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light are arranged; In this example, a sub-pixel (PD) with a light-receiving function is placed underneath. In this example, the sub-pixels (R), (G), and (B) are arranged in the same row. The pixel (PD) is arranged in a different row.

[0085] The pixel shown in FIG. 1L has the same configuration as the pixel shown in FIG. 1K, but also has a sub-pixel that emits light other than R, G, and B. It has pixels (X). In addition to R, G, and B, it also has white (W), yellow (Y), and cyan ( The sub-pixels (X) emit infrared light, and the sub-pixels (X) emit magenta light. In this case, the sub-pixel (PD) having a light receiving function preferably has a function of detecting infrared light. The sub-pixel (PD) with a light-receiving function has the function of detecting both visible light and infrared light. In addition, the pixel may have a sub-pixel for detecting visible light and a sub-pixel for detecting infrared light. The wavelength of light to be detected by the light receiving device can be determined depending on the application of the sensor. This can be done.

[0086] Alternatively, for example, the pixel may have a plurality of sub-pixels each having a light-emitting device and a plurality of sub-pixels each having a light-receiving device. It has one sub-pixel.

[0087] A display device having a light receiving / emitting device changes the pixel arrangement to incorporate a light receiving function into the pixel. Therefore, the image capturing function and sensing function can be added to the display without reducing the aperture ratio and definition. One or both of the functions can be added.

[0088] The light emitting and receiving devices may be provided in all pixels or in some pixels. Furthermore, one pixel may have a plurality of light receiving and emitting devices.

[0089] 2A to 2D show a plurality of sub-pixels each having a light-emitting device, and a plurality of sub-pixels each having a light-receiving and light-emitting device. An example of a pixel having one pixel is shown.

[0090] The pixel shown in FIG. 2A is a stripe array pixel that emits red light and has a light-receiving function. The sub-pixels (R·PD) emit green light, the sub-pixels (G) emit blue light, and the sub-pixels (R·PD) emit green light. In a display device in which a pixel is composed of three sub-pixels of R, G, and B, By replacing the light-emitting device used in the sub-pixel with a light-receiving device, the pixel can have a light-receiving function. A display device having such a structure can be manufactured.

[0091] The pixel shown in FIG. 2B has a sub-pixel (R·PD) that emits red light and has a light-receiving function, and a green The sub-pixel (G) emits light of a color other than red, and the sub-pixel (B) emits light of a blue color. R·PD) is arranged in a different column from the subpixels (G) and (B). The sub-pixels (B) are arranged alternately in the same column, one in odd-numbered rows and the other in even-numbered rows. The sub-pixels arranged in a column different from the sub-pixels of other colors are not limited to red, and may be It may be green or blue.

[0092] The pixel shown in FIG. 2C is arranged in a matrix, emits red light, and has a light-receiving function. The sub-pixels that emit green light (R·PD), the sub-pixels that emit blue light (G), and the sub-pixels that emit blue light (B ) and a sub-pixel (X) that exhibits light other than R, G, and B. In the display device consisting of four sub-pixels, the light-emitting device used in the R sub-pixel is By replacing it with an optical device, it is possible to create a display device with a light-receiving function in the pixel. do.

[0093] FIG. 2D shows two pixels, each of which is made up of three sub-pixels enclosed by dotted lines. The pixel shown in FIG. 2D is a sub-pixel that emits red light and has a light-receiving function. (R·PD), a sub-pixel that emits green light (G), and a sub-pixel that emits blue light (B). In the left pixel shown in Figure 2D, the subpixel (G) is located in the same row as the subpixel (R·PD). The right side of Figure 2D shows that the subpixel (B) is located in the same column as the subpixel (R·PD). In the pixel, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the In the pixel layout shown in Figure 2D, the odd and even rows have sub-pixels (B) arranged in columns. In either case, the sub-pixels (R·PD), (G), and (B) are repeated. In each column, sub-pixels of different colors are arranged in odd-numbered rows and even-numbered rows. It will be placed.

[0094] Figure 2E shows four pixels to which the Pentile arrangement is applied, and two adjacent pixels The sub-pixels shown in FIG. 2E have two different color combinations of light. The shape indicates the top surface shape of the light-emitting device or light-receiving / light-emitting device of the subpixel. FIG. 2F is a modification of the pixel array shown in FIG. 2E.

[0095] The upper left pixel and the lower right pixel shown in FIG. 2E are sub-pixels that emit red light and have a light-receiving function. The bottom left pixel in Figure 2E has a sub-pixel (R·PD) that emits green light and a sub-pixel (G) that emits green light. The top right pixel is a sub-pixel (G) that emits green light and a sub-pixel (B) that emits blue light. )

[0096] The upper left pixel and the lower right pixel shown in FIG. 2F are sub-pixels that emit red light and have a light-receiving function. The bottom left pixel in Figure 2F has a sub-pixel (R·PD) that emits green light and a sub-pixel (G) that emits green light. The upper right pixel and the lower right pixel are sub-pixels (R·PD) that emit red light and have a light-receiving function, and , and a sub-pixel (B) that emits blue light.

[0097] In FIG. 2E, each pixel is provided with a sub-pixel (G) that emits green light. Each pixel has a sub-pixel (R·PD) that emits red light and has a light-receiving function. Since each pixel has a sub-pixel with a light-receiving function, in the configuration shown in FIG. Compared to the configuration shown in FIG. 2E, it is possible to perform imaging with higher resolution. This can improve the accuracy of biometric authentication.

[0098] The top surface shape of the light emitting device and the light receiving / emitting device is not particularly limited, and may be a circle, an ellipse, a polygon, or the like. , a polygon with rounded corners, etc. The top surface shape of the light-emitting device of the sub-pixel (G) 2E shows an example where the shape is circular, and FIG. 2F shows an example where the shape is square. The top surface shapes of the light-emitting device and the light-receiving device may be different from each other, and may be partially different. Or it may be the same for all colors.

[0099] The aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, a sub-pixel (G in FIG. 2E, and a sub-pixel (G) in FIG. 2F) provided in each pixel may be In this case, the aperture ratio of the sub-pixel (R·PD) may be smaller than that of the sub-pixels of other colors. stomach.

[0100] FIG. 2G is a modified example of the pixel array shown in FIG. 2F. Specifically, the configuration of FIG. 2G is the same as that of FIG. In Figure 2F, two sub-pixels form one pixel. However, as shown in FIG. 2G, one image is composed of four sub-pixels. It can also be seen as being composed of elements.

[0101] In Figure 2G, one pixel is explained as being made up of four sub-pixels surrounded by dotted lines. One pixel consists of two sub-pixels (R·PD), one sub-pixel (G), and one sub-pixel (P). In this way, one pixel has a plurality of sub-pixels with a light receiving function. This allows for high-resolution imaging, thereby improving the accuracy of biometric authentication. For example, the resolution of the image can be set to the root double of the resolution of the display. do.

[0102] The display device having the configuration shown in FIG. 2F or FIG. 2G includes p (p is an integer of 2 or more) a first light-emitting device, q (q is an integer of 2 or more) second light-emitting devices, and r (r is p and q is an integer greater than or equal to 2p. In addition, p, q, and r satisfy the equation r=p+q. One of the light sources emits green light and the other emits blue light. It emits light and has a light-receiving function.

[0103] For example, when touch detection is performed using a light emitting / receiving device, light emitted from a light source is visible to the user. Blue light is less visible than green light, so blue light Therefore, the light emitting device is preferably a light source that emits blue light. It is preferable that the color sensor has a function of receiving light of a certain color and converting it into an electrical signal.

[0104] As described above, pixels with various arrangements can be applied to the display device of this embodiment mode. .

[0105] [Touch panel] Next, a case where the display device of this embodiment is made to function as a touch panel will be described.

[0106] The display device of this embodiment can be used to capture images of fingerprints, palm prints, etc., and perform biometric authentication. To enhance security functions, high resolution is required for capturing fingerprints and palm prints. Therefore, all imaging data acquired using a light receiving device or a light receiving / emitting device It is preferable that the pixels can be read out individually one by one (pixel by pixel).

[0107] On the other hand, when the display device is used as a touch panel, it is more difficult to Therefore, high resolution is not required, but high speed readout operations are required.

[0108] For example, by performing touch detection on multiple pixels at once, the drive frequency can be increased. For example, the number of pixels read simultaneously can be set to 4 pixels (2 x 2 pixels), 9 pixels (3 x 3 pixels), or can be appropriately determined to be 16 pixels (4×4 pixels), etc.

[0109] Alternatively, for example, the driving frequency can be increased by performing touch detection using only some of the pixels. For example, the number of pixels used for touch detection can be set to one for every four pixels (2 × 2 pixels). 1 pixel per 9 pixels (3x3 pixels), 1 pixel per 16 pixels (4x4 pixels), 100 1 pixel per pixel (10x10 pixels) or 1 pixel per 900 pixels (30x30 pixels) The amount of the element can be determined appropriately.

[0110] In the display device of one embodiment of the present invention, the configuration of the subpixel used as a light source for touch detection and the Specifically, the subpixels used as the light source for touch detection are different from the subpixels used as the light source for touch detection. The wavelength of the light emitted by the sub-pixel is shorter than the wavelength of the light emitted by the sub-pixel that is not used as a light source. The light source is less visible to the user, allowing for natural image display.

[0111] 3A and 3B show an example in which touch detection is performed using some pixels.

[0112] FIG. 3A shows an example in which the configuration shown in FIG. 1H is applied to a pixel 300.

[0113] The pixel 300a has a sub-pixel PD having a light receiving function, a sub-pixel R that emits red light, and a sub-pixel B that emits green light. The pixel 300b has a sub-pixel G that emits red light and a sub-pixel B1 that emits blue light. a sub-pixel PD that emits red light, a sub-pixel R that emits green light, and a sub-pixel G that emits red light. The target pixel 320 to be read out is indicated by a dashed line. Only the pixel 300a surrounded by a dot is read out. No imaging data is read out from the pixel 300b. In FIG. 3A, the target pixel 320 used for touch detection is one pixel per nine pixels (3×3 pixels). However, the number of target pixels 320 is not particularly limited. The image data is read out, and then the image data of the target pixel 320b is read out. This reduces the number of readouts compared to reading out image data from all pixels one by one. This allows the drive frequency to be increased.

[0114] The wavelength of the light emitted by the sub-pixel B1 is shorter than the wavelength of the light emitted by the sub-pixel B2. The light emitted by the sub-pixel B2 is more visible than the light emitted by the pixel B1. It is preferable that B1 is used as a light source for touch detection, and sub-pixel B2 is used for image display. That is, the subpixel B1 is used as the subpixel that emits blue light included in the target pixel 320, and the other It is preferable to use the subpixel B2 as the subpixel that emits blue light included in this pixel. In such a configuration, the number of subpixels B1 is sufficiently smaller than the number of subpixels B2, and in addition, Since the light emitted by the sub-pixel B1 is difficult for the user to see, a natural image can be displayed. In this way, the display device according to one aspect of the present invention can detect the touch of an object while displaying an image. Or proximity can be detected.

[0115] In this embodiment, the subpixel B1 is called a subpixel that emits blue light. The light emitted by the sub-pixel B1 may be light having a shorter wavelength than the light emitted by the sub-pixel B2. The light may be light of a short wavelength (for example, indigo, violet, ultraviolet light, etc.).

[0116] FIG. 3B shows an example in which the configuration shown in FIG. 2E is applied, and the device emits red light and has a light receiving function. The pixels with the sub-pixel R·PD that emits blue light and the pixels with the sub-pixel B that emits blue light alternate. are placed.

[0117] The pixel 300a includes a sub-pixel R·PD that emits red light and has a light receiving function, and a green The pixel 300b has a sub-pixel G that emits green light and a sub-pixel B that emits blue light. The pixel 300c has a subpixel B1 that emits green light, and a subpixel G that emits green light. The target pixel 320 to be read out has a dot-chain structure. In FIG. 3B, only the pixel 300a surrounded by a line is used for touch detection. Although an example in which one pixel is selected for every 16 pixels (4×4 pixels) is shown, the number of target pixels 320 is not particularly limited. First, the image data of the target pixel 320a is read out, and then the image data of the target pixel 320b is read out. The image data of the pixel between the target pixel 320a and the target pixel 320b is read out. No imaging data is read out from 300a. Compared to reading out image data, the number of readouts can be reduced and the drive frequency can be increased. can.

[0118] The wavelength of the light emitted by the subpixel B1 is shorter than the wavelength of the light emitted by the subpixel B2. It is preferable that the sub-pixel B1 is used as a light source for touch detection, and the sub-pixel B2 is used for image display. In FIG. 3B, pixel 300b uses subpixel B1, and pixel 300c uses subpixel B2. In FIG. 3B, a pixel 300b is placed to the right of the target pixel 320. The arrangement of the pixel 300b is not limited to this. In a plan view, the pixel 300b is a target pixel. The pixel may be located above, below, to the left, or to the right of the target pixel 320, and is preferably adjacent to the target pixel 320. In such a configuration, the number of sub-pixels B1 is sufficiently smaller than the number of sub-pixels B2. Furthermore, since the light emitted by the sub-pixel B1 is difficult for the user to see, a natural image is displayed. In this way, the display device of one embodiment of the present invention can perform the following while displaying an image. It is possible to detect contact or proximity of an object.

[0119] A display device according to one embodiment of the present invention has two or more pixel operation modes. For example, a mode for reading out all pixels may be used. It is preferable that the mode can be switched between a normal mode and a mode in which only some pixels are read out. This allows fingerprints to be captured at high resolution, and images to be displayed at high drive frequency. Touch detection can be performed by changing the operation mode depending on the application. The functionality of the device can be increased.

[0120] Furthermore, when performing touch detection, it is preferable to eliminate the influence of ambient light, which can cause noise. .

[0121] For example, in some pixels, the light-emitting device is turned on and off periodically, and By obtaining the difference in the detection intensity of the light receiving device or light emitting / receiving device (when not lit), The effect of ambient light can be eliminated. It is preferable to provide multiple frames as long as they do not affect the image displayed on the frame. In even and odd frames, the lit pixels are swapped with the unlit pixels. It is preferable to switch the light-emitting device on and off for each frame. The light color is not particularly limited.

[0122] In the display device of one embodiment of the present invention, a light-emitting device (e.g., a blue light-emitting device) that periodically turns on and off is used. A sub-pixel configuration having a blue light-emitting device and another sub-pixel having a blue light-emitting device. Specifically, the light-emitting device is a device that periodically turns on and off. The wavelength of light emitted by a sub-pixel having the light-emitting device is different from the wavelength of light emitted by a sub-pixel not having the light-emitting device. Therefore, even if the light-emitting device repeatedly turns on and off, it will not be recognized by the user. This can make it less likely to leak.

[0123] In Figures 4A and 4B, one pixel out of every nine pixels (3 x 3 pixels) alternates between lighting and extinguishing. An example of the arrangement is shown below.

[0124] In FIG. 4A, the pixels 330a and 330d are turned off, and the pixels 330b and 330c are turned off. In FIG. 4B, the pixel 330a and the pixel 330d are lit up, and 3 shows an example in which pixel 330b and pixel 330c are turned off.

[0125] Pixel 330d is the part of the display device that is in contact with finger 340, and pixels 330a to Pixel 330c is a portion where finger 340 is not in contact.

[0126] 4C and 4D show cross-sectional views of a pixel 330a in the display device, and FIGS. 4E and 4F show A cross-sectional view of pixel 330d is shown.

[0127] The display device shown in FIGS. 4C to 4F includes a functional layer 255, a light-emitting layer 256, and a light-emitting layer 258 between a substrate 251 and a substrate 259. The light emitting device 290B includes a light receiving device 295. When B emits blue light and the light receiving device 295 receives the blue light and converts it into an electrical signal, The display device may have a light receiving / emitting device instead of a light receiving device. It may be possible.

[0128] In this configuration, the number of light-emitting devices 290B that are periodically turned on and off is The number of sub-pixels that emit light is sufficiently smaller than the total number of sub-pixels that emit light of the same wavelength. The light emitted by the subpixel 330 having the repeating light-emitting device 290B is less visible to the user. Therefore, a natural image can be displayed. can accurately detect contact or proximity of an object while displaying an image.

[0129] 4C and 4E show the state when the light source is turned on (light-emitting device 290B is emitting light). 4D and 4F show the display device with the light source turned off (light-emitting device 290B is not emitting light). This refers to a display device when the display is not in use.

[0130] In FIG. 4C, pixel 330a is not touched by a finger, and light emitted by light-emitting device 290B is 4D shows that the light from the light-emitting device 290B is not incident on the light-receiving device 295. Since no light is emitted, the light from the light-emitting device 290B is not incident on the light-receiving device 295. In addition, as shown in Figs. 4C and 4D, the ambient light Ambient light 305 is incident on the light receiving device 295. Therefore, the ambient light 305 is a constant light. If the amount is large, the detection intensity of the light receiving device 295 of the pixel 330a is different between when the light source is turned on and when it is turned off. It can be said that it does not change when lit.

[0131] In FIGS. 4E and 4F, the ambient light 305 is incident on the object 3 regardless of whether the light source is on or off. 40 and does not reach the light receiving device 295. When the light source is turned on, the light emitted from the light-emitting device 290B is reflected by the finger 340 and is received by the light-receiving device 290B. In FIG. 4F, light-emitting device 290B is not emitting light. The light from the light-emitting device 290B is not incident on the light-receiving device 295. The detection intensity of the light receiving device 295 included in 330d changes depending on whether the light source is on or off.

[0132] For the light receiving device 295, the detected intensity from the ambient light 305 varies depending on whether the light source is on or off. The change in the detection intensity due to an object such as a finger 340 is small when the light source is on and when it is off. Therefore, it can be said that the difference in the detected intensity between when the light is on and when it is off is used to calculate the This eliminates the influence of ambient light and allows for highly accurate detection of objects.

[0133] In the above example, the difference between the detected intensity when the light source is on and when it is off is used. It is not necessary to turn off the light source. For example, when the light source emits strong light and when it emits weak light, It is also possible to use the difference in detection intensity between the

[0134] [Subpixel] Next, a detailed structure of a subpixel of a display device according to one embodiment of the present invention will be described. A light-emitting device, a light-receiving device, and a light-receiving / light-emitting device that can be used in a display device of one embodiment The detailed configuration of the device will be described.

[0135] The wavelength of the light emitted by the subpixel is the same as or approximately the same as the wavelength of the light emitted by the light-emitting device. Alternatively, the wavelength of the light emitted by the sub-pixel may be determined by the wavelength of the light emitted by the light-emitting device. Alternatively, it may be the wavelength of light extracted through a color conversion layer or the like.

[0136] The display device according to one embodiment of the present invention emits light in a direction opposite to the substrate on which the light-emitting device is formed. top-emission type, which emits light toward the substrate on which the light-emitting device is formed; and bottom-emission type, which emits light toward the substrate on which the light-emitting device is formed. It can be either a one-emission type or a dual-emission type that emits light from both sides. .

[0137] In this embodiment, a top-emission display device will be described as an example.

[0138] The display device 280A, the display device 280B, and the display device 280C shown in FIGS. 5A, 5B, and 6 80C each includes a pixel 300a and a pixel 300b.

[0139] The pixel 300a is a sub-pixel having a light receiving device 270PD, a light emitting device that emits red light (R), A subpixel having a light-emitting device 270R that emits green light (G) and a subpixel having a light-emitting device 270G that emits green light (G). and a subpixel having a light-emitting device 270B1 that emits blue light (Ba). do.

[0140] The pixel 300b is a subpixel having a light receiving device 270PD and a light emitting device 270R that emits red light (R). A subpixel having a light-emitting device 270R that emits green light (G) and a subpixel having a light-emitting device 270G that emits green light (G). and a subpixel having a light-emitting device 270B2 that emits blue light (Bb). do.

[0141] Red light (R) is, for example, light with a maximum peak wavelength of 580 nm or more in the emission spectrum. Examples of blue light (Bb) include light with an emission spectrum of less than 50 nm. Green light (G) is light with a maximum peak wavelength of 400 nm or more and 480 nm or less. For example, the maximum peak wavelength of red light (R) and the maximum peak wavelength of blue light (Bb) For example, green light (G) can be emitted at a wavelength between Examples of such light include light with a peak wavelength of 480 nm or more and less than 580 nm.

[0142] Here, compared to the wavelength of blue light Bb extracted from pixel 300b, The wavelength of the extracted blue light Ba is short. Therefore, the blue light Ba is used as the touch detection light. It is preferable to use blue light Bb for the image display and blue light Bc for the light source. This makes it difficult for blue light (Ba) to be seen, allowing for natural image display. For example, the maximum peak wavelength of the emission spectrum is 400 nm or more, and blue light (B b) can be less than the maximum peak wavelength of blue light (Ba). The maximum peak wavelength of the spectrum may be less than 400 nm.

[0143] Each light-emitting device shown in FIG. 5A includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, and a hole injection layer 283. The light-emitting layer, the electron transport layer 284, the electron injection layer 285, and the common electrode 275 are laminated in this order. Light-emitting device 270R has light-emitting layer 283R, and light-emitting device 270G has Light-emitting device 270B1 has light-emitting layer 283B1, and light-emitting device The device 270B2 has a light-emitting layer 283B2. The light-emitting layer 283R emits red light. The light-emitting layer 283G contains a light-emitting material that emits green light, and the light-emitting layer 283B1 The light-emitting layer 283B2 contains a light-emitting material that emits blue light. The pixel electrodes 271 are electrically insulated from each other (also called electrically separated). The common electrode 275 is used in common for each light-emitting device.

[0144] The luminescent material contained in the luminescent layer 283B1 has a shorter wavelength than the luminescent material contained in the luminescent layer 283B2. In this way, the light-emitting layer of a blue light-emitting device is formed and divided. By doing so, it is possible to provide two types of blue sub-pixels with different visibility in a display device. Cut.

[0145] The light-emitting device emits light by applying a voltage between the pixel electrode 271 and the common electrode 275. It is an electroluminescent device that emits light to the electrode 275 side.

[0146] The light receiving device 270PD includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 283, and a photodiode 284. The conductive layer 273, the electron transport layer 284, the electron injection layer 285, and the common electrode 275 are laminated in this order. and possesses.

[0147] The light receiving device 270PD receives light incident from outside the display device 280A and outputs an electric signal. It is a photoelectric conversion device that converts light into electrical signals.

[0148] In this embodiment, in both the light-emitting device and the light-receiving device, the pixel electrode 271 The description will be given assuming that the electrode functions as an anode and the common electrode 275 functions as a cathode. The light receiving device is driven by applying a reverse bias between the pixel electrode 271 and the common electrode 275. By doing so, the light incident on the light receiving device is detected, an electric charge is generated, and the electric charge is extracted as a current. This can be done.

[0149] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light receiving device 270PD. The light receiving device 270PD has layers other than the active layer 273 that are the same as those of the light emitting device. Therefore, the process of forming the active layer 273 can be omitted in the manufacturing process of the light emitting device. By simply adding a step, the light receiving device 270PD is formed in parallel with the formation of the light emitting device. In addition, the light emitting device and the light receiving device 270PD can be formed on the same substrate. Therefore, it is possible to incorporate a light-receiving device into a display device without significantly increasing the manufacturing process. It can accommodate 270PD.

[0150] In the display device 280A, the active layer 273 of the light receiving device 270PD and the light emitting layer of the light emitting device The light receiving device 270PD and the light emitting device have the same configuration except for the layer 283. However, the configuration of the light receiving device 270PD and the light emitting device is not limited to this. The light receiving device 270PD and the light emitting device include an active layer 273, a light emitting layer 283, and The light-receiving device 270PD and the light-emitting device 270PD may have separate layers. It is preferable that the layers have at least one layer that is commonly used (common layer). The light-receiving device 270PD can be built into the display device without significantly increasing the number of processes. do.

[0151] The electrode from which light is extracted, either the pixel electrode 271 or the common electrode 275, is provided with a transparent electrode that transmits visible light. A conductive film that reflects visible light is used for the electrode on the side where light is not extracted. It is preferable that

[0152] The light-emitting device included in the display device of this embodiment is a micro-optical resonator (microcavity). Therefore, the light-emitting device preferably has a pair of electrodes. One of them has an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to visible light. The other electrode preferably has a reflectivity to visible light (reflective electrode). It is preferable that the light-emitting device has a microcavity structure, and the light-emitting layer can be easily obtained. The emitted light can be resonated between the electrodes, thereby enhancing the light emitted from the light-emitting device.

[0153] The semi-transparent / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). It can have a laminated structure with a polyimide film.

[0154] The light transmittance of the transparent electrode is 40% or more. For example, in a light-emitting device, visible light (wavelength It is preferable to use an electrode having a transmittance of 40% or more for light having a wavelength of 400 nm or more and less than 750 nm. The reflectance of the semi-transmissive / semi-reflective electrode for visible light is 10% or more and 95% or less, preferably 3 The reflectance of the reflective electrode for visible light is 40% or more and 100% or less, preferably Preferably, the resistivity of these electrodes is 70% or more and 100% or less. -2 It is preferable that the light emitting device emits near-infrared light (wavelength 750 nm or more, 1300 nm or less). When emitting near-infrared light (light below 1000 nm), the transmittance or reflectance of these electrodes is As with the transmittance or reflectance, it is preferable that the above numerical range is satisfied.

[0155] The light emitting device has at least a light emitting layer 283. The light emitting device has other layers than the light emitting layer 283. As the layer, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, an electron transport material, a material with high electron transporting ability, a material with high electron injecting ability, or a bipolar material (electron transporting and hole transporting ability) The layer containing a substance having high transport properties may further be provided.

[0156] For example, light-emitting and light-receiving devices may include a hole injection layer, a hole transport layer, an electron transport layer, and One or more layers of the electron injection layer may have a common structure. The optical device includes one or more layers selected from the group consisting of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. They can be made different from each other.

[0157] The hole injection layer is a layer that injects holes from the anode to the hole transport layer, and is made of a material with high hole injection properties. The material having a high hole injection property is an aromatic amine compound or a hole transporting material. and an acceptor material (electron-accepting material).

[0158] In a light-emitting device, the hole transport layer transports holes injected from the anode by the hole injection layer. In a light-receiving device, the hole transport layer transports electrons incident on the active layer to the light-emitting layer. The hole transport layer is a layer that transports holes generated by the incident light to the anode. The hole transport material is a layer containing -6 cm 2 / Vs or higher hole mobility In addition, other than these, any substance having a higher hole transporting property than an electron transporting property is preferable. As the hole transport material, a π-electron-rich heteroaromatic compound ( For example, carbazole derivatives, thiophene derivatives, furan derivatives, etc., and aromatic amines (aromatic A material having a high hole transporting property, such as a compound having an aromatic amine skeleton, is preferred.

[0159] In a light-emitting device, the electron transport layer transports electrons injected from the cathode by the electron injection layer. In a light-receiving device, the electron transport layer is a layer that transports electrons incident on the active layer to the light-emitting layer. The electron transport layer is a layer that transports electrons generated by the incident light to the cathode. The electron transport material is a layer containing 1×10 -6 cm 2 Electron mobility above / Vs It is preferable that the material has a higher electron transporting property than a hole transporting property than the above. As the electron transporting material, metal complexes having a quinoline skeleton can be used. metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, thiazolidinyl compounds, In addition to metal complexes with an oxadiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, Quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoline derivatives, Benzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, In addition, π-electron deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds have high electron transport properties. Materials can be used.

[0160] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is made of a material with high electron injection properties. The material with high electron injection properties is an alkali metal, an alkaline earth metal, or As a material with high electron injection properties, an electron transport material can be used. A composite material containing a material and a donor material (electron donor material) can also be used.

[0161] The light-emitting layer 283 is a layer containing a light-emitting material. The luminescent materials include blue, purple, blue-purple, green, yellow-green, yellow A material that emits light of a color such as red, orange, or near-infrared light is used as the light-emitting material. It is also possible to use a substance that emits light.

[0162] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials. do.

[0163] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. , fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran Derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidin Examples of the aryl group include phenylene derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0164] Examples of phosphorescent materials include those with a 4H-triazole skeleton, a 1H-triazole skeleton, and an imidazoline skeleton. Organometallic complexes having a zole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton (especially iridium complexes), and the use of phenylpyridine derivatives with electron-withdrawing groups as ligands. Examples include organic metal complexes (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0165] The light-emitting layer 283 contains one or more organic compounds (phosphatides) in addition to a light-emitting substance (guest material). The organic compound may contain one or more organic compounds such as a support material, an assist material, etc. One or both of a hole transporting material and an electron transporting material can be used. Bipolar materials or TADF materials are used as one or more organic compounds. Good too.

[0166] The light-emitting layer 283 is made of, for example, a phosphorescent material and a hole transport compound, which is a combination that easily forms an exciplex. It is preferable that the layer has an electron transport material and an electron transfer material. Therefore, the energy transfer from the exciplex to the luminescent material (phosphorescent material) is called ExTET (Exc Efficient light emission using triplex-triplet energy transfer The emission wavelength overlaps with the lowest energy absorption band of the luminescent material. By selecting a combination that forms an exciplex exhibiting This configuration allows for high efficiency light emission of the light-emitting device. , low voltage operation and long life can be achieved at the same time.

[0167] The combination of materials that form an exciplex is determined by the HOMO level (highest peak) of the hole transport material. It is preferable that the occupied orbital level of the electron transporting material is equal to or higher than the HOMO level of the electron transporting material. The LUMO level (lowest unoccupied molecular orbital) of the material is equal to or higher than the LUMO level of the electron transport material. The LUMO and HOMO levels of the material can be determined by cyclic voltammetry (C V) Derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by measurement It is possible.

[0168] The formation of an exciplex changes the emission spectrum of, for example, a hole transport material or an electron transport material. The emission spectra of the mixed film were compared with those of the other materials. The spectrum shifts to longer wavelengths than the emission spectrum of each material (or a new peak appears on the longer wavelength side). This can be confirmed by observing the phenomenon of hole transport. Transient photoluminescence (PL) of electron transport materials, and the transient PL of the mixtures of these materials. The transient PL lifetime of the mixed film was compared, and it was found that the transient PL lifetime of the mixed film was longer than that of each material. Differences in transient response were observed, such as the presence of long-lived components or a larger proportion of delayed components. The above-mentioned transient PL can be confirmed by transient electroluminescence. In other words, the transient EL of the hole transport material, electron The transient EL of materials with transport properties and the transient EL of their mixed films were compared to examine the differences in transient response. The formation of the exciplex can also be confirmed by observing the

[0169] The active layer 273 includes a semiconductor, such as an inorganic semiconductor such as silicon, In this embodiment, the active layer 273 has An example of using an organic semiconductor as a semiconductor is shown below. By using an organic semiconductor, the light-emitting layer 283 The active layer 273 and the active layer 274 can be formed by the same method (for example, vacuum deposition). This is preferable because the equipment can be shared.

[0170] The active layer 273 has an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 etc. ) and fullerene derivatives, which are electron-accepting organic semiconductor materials. Fullerenes have a shape like a ball, which is energetically stable. In fullerenes, both the HOMO level and the LUMO level are deep (low). Because it is deep, it has extremely high electron-accepting properties. When the π-electron conjugation (resonance) spreads, the electron donating property (donor property) increases. Because of its spherical shape, the electron-accepting property is high despite the large spread of π electrons. High electron acceptance allows charge separation to occur quickly and efficiently, making it useful as a light-receiving device. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C6 It is preferred because it has a larger π-electron conjugated system than 0 and has a wide absorption band in the long wavelength region.

[0171] In addition, as materials for n-type semiconductors, metal complexes with a quinoline skeleton and benzoquinoline skeletons are available. a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, compounds, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole Derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline Derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridin derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0172] The p-type semiconductor material of the active layer 273 is copper (II) phthalocyanine (Copp er(II) phthalocyanine (CuPc), tetraphenyldibenzophenone Tetraphenyldibenzoperiflanthene (D BP), Zinc Phthalocyanine (ZnPc), Examples include electron-donating organic semiconductor materials such as tin phthalocyanine (SnPc) and quinacridone. can be done.

[0173] In addition, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Furthermore, as a p-type semiconductor material, are naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, Fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, Dhole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, cinchona Cridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives Examples of the thiophene derivatives include polyvinylcarbazole derivatives, polythiophene derivatives, and the like.

[0174] The HOMO level of an electron-donating organic semiconductor material is higher than the HOMO level of an electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the It is preferable that the LUMO level is shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0175] Spherical fullerenes are used as electron-accepting organic semiconductor materials, and electron-donating organic semiconductors are It is preferable to use an organic semiconductor material with a nearly planar shape. When molecules of the same kind aggregate, the energy levels of their molecular orbitals Since the distance is close, the carrier transport property can be improved.

[0176] For example, the active layer 273 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. .

[0177] Light-emitting devices and light-receiving devices use either low-molecular-weight compounds or high-molecular-weight compounds. The light-emitting device and the light-receiving device may be made of a material selected from the group consisting of a silicon dioxide, a silicon nitride, a silicon nitride, a silicon dioxide powder ... Each of the light-emitting devices and the light-receiving devices may be fabricated using premixed materials. The layers constituting the layer are formed by deposition (including vacuum deposition), transfer, printing, inkjet, etc. The layer can be formed by a method such as a jet method or a coating method.

[0178] The display device 280B shown in FIG. 5B has a hole transport layer that is individually fabricated for each device. , the light-emitting device 270B1 and the light-emitting device 270B2 have the same light-emitting layer 283B. In the following description of the display device, the display device 280A is different from the display device 280A. Descriptions of configurations similar to those of the display device may be omitted.

[0179] The light-receiving device 270PD has a hole-transporting layer 282PD, and the light-emitting device 270R has a hole-transporting layer 282PD. light-emitting device 270G has hole-transport layer 282G and light-emitting device Light-emitting device 270B1 has a hole-transport layer 282B1, and light-emitting device 270B2 has a hole-transport layer 282B2. The transmission layer 282B2.

[0180] The hole transport layers 282PD, 282R, 282G, 282B1, and 282B2 are Specifically, the light-emitting device 270B1 has a function as an optical adjustment layer. The thickness of the hole transport layer 282B1 is adjusted so that the optical distance is an optical distance that intensifies blue light. Similarly, it is preferable that the optical distance between the pair of electrodes of the light-emitting device 270B2 is blue. It is preferable to adjust the thickness of the hole transport layer 282B2 so that the optical distance is such that the light from the hole transport layer 282B2 is intensified. It's nice.

[0181] The light-emitting device 270B1 is configured to intensify light of a shorter wavelength than the light-emitting device 270B2. This allows the light emitting device 270B1 and the light emitting device 270B2 to Even if the same light-emitting layer 283B is used, two types of blue sub-pixels with different visibility can be displayed. It can be provided in the device.

[0182] In addition, as in the display device 280A, a display device in which the light-emitting layer of the blue light-emitting device is separately manufactured In the device, two types of blue sub-pixels are used to enhance different wavelengths of light, resulting in two The difference in visibility between the different blue sub-pixels may be further increased.

[0183] The light emitting device 270B1 is configured to intensify light of a shorter wavelength than the light emitting device 270B2. In order to achieve this, for example, the thickness of the hole transport layer 282B1 is set to be larger than the thickness of the hole transport layer 282B2. Alternatively, only the hole transport layer 282B2 is provided, and the hole transport layer 28 2B1 does not need to be provided.

[0184] In addition, the optical distance between the pair of electrodes of the light-emitting device 270G is set to an optical distance that intensifies green light. It is preferable to adjust the thickness of the hole transport layer 282G so that the thickness of the hole transport layer 282G is large enough. The hole transport layer is formed so that the optical distance between the pair of electrodes of 70R is an optical distance that enhances red light. It is preferable to adjust the film thickness of the photodetector 282R. The hole transport layer 28 is formed so that the optical distance between the hole transport layer 28 and the hole transport layer 28 is an optical distance that mainly enhances the light of the wavelength that is desired to be received. It is preferable to adjust the film thickness of 2PD. It is not limited to layers.

[0185] In the display device 280C shown in FIG. 6, the pixel 300a and the pixel 300b are the same light-emitting device 27 0B, and in pixel 300a, light emitted from light-emitting device 270B is transmitted through colored layer CF. The display device 280 differs from the display device 280A in that the image is extracted in a separate image.

[0186] Light-emitting device 270B has light-emitting layer 283B. In pixel 300b, light emitted from light-emitting device 2 is extracted through colored layer CF. The emitted light from 70B is extracted without passing through the colored layer CF.

[0187] The colored layer CF cuts out light on the long wavelength side of the blue light emitted by the light emitting device 270B. It is preferable that light on the short wavelength side can be extracted. The blue subpixel can emit light with a shorter wavelength than the blue subpixel of pixel 300b. That is, the pixel 300a and the pixel 300b have the same configuration of light-emitting devices that emit blue light. Even if the blue subpixels are the same, two types of blue subpixels with different visibility can be provided in the display device. Furthermore, the light emitted by the light emitting device 270B of the pixel 300b is more transparent than the colored layer CF. The light may be extracted through a colored layer that can extract light of a longer wavelength.

[0188] In addition, as in the display devices 280A and 280B, the pixel 300a and the pixel 300b form a blue Even if the configurations of the light-emitting devices are different from each other, the structure in which light is extracted through the colored layer is By using a colored layer to extract different wavelengths of light, two types of blue light can be obtained. The difference in visibility between the color sub-pixels may be even greater.

[0189] The display devices 280D to 280G described below are each illustrated with respect to one pixel. However, each display device has at least two types of pixels, one of which has a blue subpixel. The blue subpixel of the other pixel emits light at a shorter wavelength than the blue subpixel of the other pixel. The blue subpixels have different luminescent materials, different thicknesses of the optical adjustment layers, and different coloring materials. By applying one or more of the following configurations, visibility can be improved: Two different blue sub-pixels having different blue colors can be provided in the display device.

[0190] The display device 280D shown in FIG. 7A includes a light receiving device 270PD and a light emitting device 270R. It differs from the display device 280A in that it has a single configuration.

[0191] The light receiving device 270PD and the light emitting device 270R share an active layer 273 and a light emitting layer 283R. It has throughout.

[0192] Here, the light receiving device 270PD is a light emitting device that emits light with a longer wavelength than the light to be detected. For example, a light-receiving device configured to detect blue light is preferably configured in the same way as a light-receiving device configured to detect blue light. 270PD is similar to one or both of light emitting device 270R and light emitting device 270G. For example, the light receiving device 270PD can be configured to detect green light. can be configured similarly to light emitting device 270R.

[0193] The light receiving device 270PD and the light emitting device 270R are configured in a common configuration. The light-emitting device 270PD and the light-emitting device 270R have different layers. In comparison, the number of film forming steps and the number of masks can be reduced. The manufacturing process and manufacturing costs can be reduced.

[0194] In addition, by using a common configuration for the light receiving device 270PD and the light emitting device 270R, The light receiving device 270PD and the light emitting device 270R have different layers. This allows for a narrower margin for misalignment compared to the conventional configuration, thereby increasing the aperture ratio of the pixel. This can increase the light extraction efficiency of the display device. This can extend the life of the device. Also, the display device can express high brightness. It is also possible to increase the resolution of display devices.

[0195] The light-emitting layer 283R contains a light-emitting material that emits red light. It contains organic compounds that absorb light of wavelengths (e.g., green light and / or blue light). The active layer 273 does not easily absorb red light and absorbs light with wavelengths shorter than red. As a result, red light is emitted from the light-emitting device 270R. Light is extracted efficiently, and the 270PD photodetector detects light with wavelengths shorter than red with high precision. can be detected.

[0196] In the display device 280D, the light-emitting device 270R and the light-receiving device 270PD are the same. The light emitting device 270R and the light receiving device 270PD are configured as follows: The optical adjustment layers may have different thicknesses.

[0197] For example, as in a display device 280E shown in FIG. 7B, an optical adjustment layer is provided on the pixel electrode 271. If the thickness of the optical adjustment layer is different between the light emitting device 270R and the light receiving device 270PD, It is preferable to perform optical adjustment by adjusting the optical axis.

[0198] Specifically, the optical distance between the pair of electrodes of the light-emitting device 270R is set to an optical distance that enhances red light. It is preferable that the optical adjustment layer 272R is provided so as to be spaced apart from the light receiving device 270. The optical distance between the pair of electrodes of the PD is adjusted to an optical distance that intensifies the light of the wavelength to be detected. Preferably, an optical adjustment layer 272PD is provided. The light receiving device 270PD can extract red light efficiently and detects light with high accuracy. It can be detected.

[0199] For example, a reflective electrode may be used for the pixel electrode 271, and a transparent electrode may be used for the optical adjustment layer 272. In this case, the optical adjustment layer 272 can be regarded as a part of the pixel electrode 271.

[0200] Furthermore, the light-emitting device 270G uses an optical adjustment layer 272G to adjust the optical distance between the pair of electrodes. It is preferable that the optical distance is adjusted so that the green light is strengthened. The light-emitting device 270B uses an optical adjustment layer 272B to adjust the optical distance between the pair of electrodes to blue. It is preferable that the optical distance is adjusted so as to intensify the light.

[0201] In the display device 280E, the light receiving device 270PD and the light emitting device 270R are active The display device has a common layer 273 and a light-emitting layer 283R. Costs can be reduced.

[0202] The display device 280F shown in FIG. 7C uses a light-emitting device having a tandem structure with multiple EL layers. The display device 280 differs from the display device 280A in that it has a display device.

[0203] The light receiving device 270PD of the display device 280F is the same as the light receiving device 270PD of the display device 280A. It has the same configuration as the Vise 270PD.

[0204] The light emitting devices 270R, 270G, and 270B of the display device 280F have a common configuration. The light emitted by the light emitting device 270R is displayed as red light through the colored layer CFR. The light emitted by the light-emitting device 270G is then removed from the display device 280F. The light is extracted from the display device 280F as green light via FG. The light emitted by the chair 270B passes through the colored layer CFB and is transmitted as blue light to the display device 280F. is taken out from

[0205] The light-emitting devices 270R, 270G, and 270B of the display device 280F include a hole transport layer 2 82, a unit 286a, an intermediate layer 287, and a unit 286b are laminated in this order. An electron transport layer 284 is provided on unit 286b.

[0206] The unit 286a and the unit 286b each have a single layer structure or a laminated structure, The unit 286a and the unit 286b have at least one light-emitting layer. It is preferable to obtain white light emission by combining the light emitted from the light-emitting layers. The unit 286a is provided with a light-emitting layer having a light-emitting material that emits blue light, and the unit 286b is provided with A light-emitting layer having a light-emitting material that emits green light and a light-emitting layer having a light-emitting material that emits red light. By providing the above, the light emitting device as a whole can emit white light.

[0207] The intermediate layer 287 has at least a charge generating region. When a voltage higher than the threshold voltage is applied, holes and electrons are generated in the intermediate layer 287. The electrons move to unit 286a and are injected into unit 286b. The holes recombine with electrons injected from the common electrode 275 side and are contained in the unit 286b. The electrons injected into the unit 286a are then transported to the pixel electrode 27. The electrons recombine with the holes injected from the first side, causing the luminescent material contained in the unit 286a to emit light. Therefore, the holes and electrons generated in the intermediate layer 287 are respectively in different units. The intermediate layer 287 has a charge generating region, a hole transport layer, and an electron transport layer. It's fine.

[0208] By making the light-emitting devices 270R, 270G, and 270B have a common configuration, the light-emitting device 2 Compared to the structure in which 70R, 270G, and 270B have layers that are created separately, the number of film formation processes is Therefore, the manufacturing process and manufacturing costs of the display device can be reduced. This can reduce costs.

[0209] In addition, by making the light emitting devices 270R, 270G, and 270B have a common configuration, Compared to the structure in which the seats 270R, 270G, and 270B have layers that are created separately from each other, This allows the aperture ratio of the pixel to be increased, and the display The higher the aperture ratio of the pixel, the more efficient the light extraction efficiency of the display device. This allows the brightness of the sub-pixels required to obtain a certain brightness to be reduced. The life of the device can be extended. Also, the display device can express high brightness. It is also possible to increase the resolution of display devices.

[0210] The light-emitting devices 270R, 270G, and 270B each have an optical adjustment layer with a different thickness. may have

[0211] The display device 280G shown in FIGS. 8A and 8B emits red light (R) and has a light receiving function. a light emitting device 270G that emits green light (G); and a light-emitting device 270B that emits blue light (B).

[0212] Each light-emitting device includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, and a The electron transport layer 284, the electron injection layer 285, and the common electrode 275 are laminated in this order. The optical device 270G has a light-emitting layer 283G, and the light-emitting device 270B has a light-emitting layer 283 The light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B has It contains a luminescent material that emits blue light.

[0213] The light emitting / receiving device 270R-PD includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 28 2, the active layer 273, the light-emitting layer 283R, the electron transport layer 284, the electron injection layer 285, and the common electrode The poles 275 are stacked in this order.

[0214] The light emitting and receiving device 270R-PD of the display device 280G is the same as that of the display device 280D. The light emitting device 270R and the light receiving device 270PD have the same configuration. The light emitting devices 270G and 270B of the display device 280G are also The light emitting devices 270G and 270B have the same configuration as the light emitting devices 270G and 270B.

[0215] FIG. 8A shows a case where the light emitting and receiving device 270R-PD functions as a light emitting device. In FIG. 8A, light-emitting device 270B emits blue light and light-emitting device 270G emits green light. 10 shows an example in which the light emitting and receiving device 270R-PD emits red light.

[0216] FIG. 8B shows a case where the light receiving and emitting device 270R-PD functions as a light receiving device. In FIG. 8B, light-emitting device 270B emits blue light and light-emitting device 270G emits blue light. 10 shows an example in which the light emitting and receiving device 270R-PD detects green light.

[0217] The light emitting device 270B, the light emitting device 270G, and the light receiving and emitting device 270R-PD are Each of the pixel electrodes 271 and the common electrode 275 is provided. 71 functions as an anode and the common electrode 275 functions as a cathode. do.

[0218] In this embodiment, similarly to the light emitting device, the light receiving and emitting device 270R-PD also has the following characteristics: The pixel electrode 271 functions as an anode, and the common electrode 275 functions as a cathode. That is, the light emitting and receiving device 270R-PD includes a pixel electrode 271 and a common electrode 275. By applying a reverse bias between the can be detected, a charge can be generated, and extracted as a current.

[0219] The light emitting and receiving device 270R-PD shown in FIGS. 8A and 8B has an active layer In other words, the active layer 273 is added to the manufacturing process of the light-emitting device. By simply adding the process of forming a film of 273, the light-emitting device can be formed in parallel with the formation of the light-emitting device. 270R-PD can be formed. Therefore, the display area can be formed without significantly increasing the manufacturing process. It is possible to provide one or both of an imaging function and a sensing function to the sensor.

[0220] [Light receiving and emitting devices] 8C to 8F show examples of the stacked structure of the light emitting and receiving device.

[0221] The light emitting and receiving device has at least an active layer and a light emitting layer between a pair of electrodes.

[0222] The light-receiving and light-emitting device is made up of layers other than the active layer and the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, and Highly electron-blocking materials, highly electron-blocking materials, highly electron-transporting materials, and highly electron-injecting materials Highly electron-blocking or bipolar materials (electron transporting and hole transporting The material may further include a layer containing a material having a high resistance to light.

[0223] The light-receiving and light-emitting devices shown in FIGS. 8C and 8D each include a first electrode 277 and a hole injection layer 28. 1, hole transport layer 282, light emitting layer 283R, active layer 273, electron transport layer 284, electron injection layer 285 and a second electrode 278.

[0224] The stacking order of the light-emitting layer 283R and the active layer 273 is not limited. An active layer 273 is provided on the transmission layer 282, and a light-emitting layer 283R is provided on the active layer 273. In FIG. 8C, an example is shown in which a light-emitting layer 283R is provided on a hole-transporting layer 282. 8D shows an example in which an active layer 273 is provided on the active layer 273. 2 shows an example in which a transport layer 282 is provided and a light-emitting layer 263R is provided on the hole transport layer 282. vinegar.

[0225] As shown in FIGS. 8A to 8C, the active layer 273 and the light-emitting layer 283R are in contact with each other. As shown in FIG. 8D, a buffer layer is provided between the active layer 273 and the light-emitting layer 283R. The buffer layer is preferably a hole injection layer, a hole transport layer, an electron transport layer, or a At least one layer selected from the group consisting of a layer, an electron injection layer, a hole blocking layer, and an electron blocking layer is used. 8D shows an example in which a hole transport layer 282 is used as a buffer layer.

[0226] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, It is possible to suppress the transfer of excitation energy to the active layer 273. In addition, by using a buffer layer, It is also possible to adjust the optical path length (cavity length) of the microcavity structure. Therefore, from the light emitting and receiving device having a buffer layer between the active layer 273 and the light emitting layer 283R, High luminous efficiency can be obtained.

[0227] The light emitting and receiving device shown in FIG. 8E differs from the light emitting and receiving device shown in FIGS. 8A to 8D in that it does not have the hole transport layer 282. The light-receiving and light-emitting device is different from the light-receiving and light-emitting device. At least one of the electron transport layer 284 and the electron injection layer 285 may not be included. The light-receiving and light-emitting device may also have other functional layers such as a hole-blocking layer and an electron-blocking layer. It's fine.

[0228] The light emitting and receiving device shown in FIG. 8F does not have the active layer 273 and the light emitting layer 283R. 8A to 8E in that it has a layer 289 that also serves as a conductive layer.

[0229] The layer 289 that functions as both a light-emitting layer and an active layer can be used for the active layer 273, for example. An n-type semiconductor, a p-type semiconductor that can be used for the active layer 273, and a A layer containing three materials, namely, a light-emitting material capable of emitting light and a light-emitting material capable of emitting light, can be used.

[0230] The absorption spectrum of the mixed material of n-type and p-type semiconductors is The band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap each other. It is preferable that they are not present, and it is more preferable that they are sufficiently separated.

[0231] In light-receiving devices, a conductive film that transmits visible light is used for the electrode on the light-extracting side. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0232] The functions and materials of each layer constituting the light-receiving and light-emitting device are Since the functions and materials of the layers are similar to those of the other layers, detailed description thereof will be omitted.

[0233] [Drive method] Next, an example of a method for driving a display device according to one embodiment of the present invention will be described with reference to FIGS. 9 to 11. The following describes a method for performing touch detection (capturing images) while displaying an image. In the following, we will use the time series in which the influence of ambient light that causes noise has been removed, as explained with reference to FIG. An example of application of the method of detecting a pixel will be described below.

[0234] 9A to 9C, for each of the pixel 300 and the target pixel 320, two frames The driving method for the minute will be explained.

[0235] The pixel 300 is used for image display. The target pixel 320 is used for both image display and touch detection. It is used for.

[0236] Each frame consists of two periods: a period in which an image is displayed and a period in which an image is captured while being displayed. It can be divided into subframes.

[0237] The pixel 300 displays an image in both of the two sub-frames. The luminance values ​​of the sub-pixels in the first frame are: sub-pixel R has a luminance value P11, sub-pixel G has a luminance value P1 2, subpixel B has a luminance value P13. The luminance values ​​of each subpixel in the second frame shown in FIG. 9A are The subpixel R has a luminance value P21, the subpixel G has a luminance value P22, and the subpixel B has a luminance value P23. The sub-pixel PD of the pixel 300 does not capture an image.

[0238] The luminance values ​​of the sub-pixels may be different between the first and second frames. For the sake of simplicity, let us assume that the brightness values ​​P11 and P21 are equal, and the brightness values ​​P12 and P23 are equal. The following description will be given by taking as an example a case where the brightness values ​​P22 are equal and the brightness values ​​P13 and P23 are equal.

[0239] As shown in FIG. 9B, in the pixel 300, the luminance of the sub-pixel B that emits blue light is It is constant in both the first and second frames.

[0240] The target pixel 320 displays an image in one of the two subframes and captures an image in the other. In FIG. 9A, an image is displayed in the first subframe, and then in the second subframe. An example of capturing an image in a frame is shown below.

[0241] In each frame, the luminance values ​​of the pixel 300 and the target pixel 320 are different from each other. For the sake of simplicity, the first and second frames are both pixel 3. An example where the luminance value of 00 is equal to the luminance value of the target pixel 320 will be described.

[0242] The luminance values ​​of the R and G subpixels of the target pixel 320 are the same as those of the pixel 300. In the first frame, the R subpixel has a luminance value of P11, the G subpixel has a luminance value of P12, and in the second frame, the The R subpixel has a luminance value P21, and the G subpixel has a luminance value P22.

[0243] The luminance value of the sub-pixel B in the first sub-frame of each frame (luminance value P13, luminance value P23) is the same as pixel 300. In the first subframe of each frame, In the sub-pixel PD of the target pixel 320, no imaging is performed.

[0244] In the second subframe of each frame, the subpixel PD of the target pixel 320 is As shown in Figures 9A and 9C, in the second sub-frame of the first frame, The luminance value P14 of the subpixel B in the second subframe of the second frame is The brightness value P24 is greater than the brightness value P24 of B. Note that the brightness value P24 is zero (the light-emitting device is not lit). It is not important whether the brightness value P13 or P14 is larger or smaller. The magnitude relationship between the value P23 and the brightness value P24 does not matter.

[0245] The difference in the detected intensity of the sub-pixel PD between the first frame and the second frame is By acquiring this information, the influence of ambient light can be eliminated and touch detection can be performed with high accuracy.

[0246] Here, if high-intensity light emission and low-intensity light emission are performed consecutively in an extremely short light emission time, The human eye cannot distinguish between the two lights and perceives them as having a brightness between the two. The luminance perceived by the eye depends on the time integral of the luminance.

[0247] Therefore, the luminance of the sub-pixel B in the first frame is higher for the target pixel 320 than for the pixel 300. Specifically, the target pixel 320 is brighter than the pixel 300 in the first frame. The difference X between the brightness value P14 and the brightness value P13 in the second subframe of The integral value becomes larger.

[0248] On the other hand, the luminance of the sub-pixel B in the second frame is darker in the target pixel 320 than in the pixel 300. Specifically, the target pixel 320 has two pixels in the second frame, which are different from the pixel 300. The difference Y between the brightness value P24 and the brightness value P23 in the eye subframe is the time integral value of brightness. becomes smaller.

[0249] Therefore, the time integral value of the luminance at the target pixel 320 is set to a desired value (here, pixel 3 In each frame, the first sub-pixel is The time integral value of the luminance of the target pixel 320 in the first sub-frame is calculated by It is preferable to adjust the sum of the time integral value of the luminance of 0 and the luminance of 0.

[0250] 10A and 10B show the time integral value of the luminance in the first subframe and the time integral value of the luminance in the second subframe. In this example, the sum of the time integral value of the brightness of the frame and the target pixel 320 is the same for the pixel 300. do.

[0251] As described above, in FIG. 9A, in the first subframe of each frame, the luminance of subpixel B is The values ​​(brightness value P13, brightness value P23) are the same as those of pixel 300. On the other hand, in FIG. 10A, The luminance value of sub-pixel B in the first sub-frame of each frame is the luminance value P 13, luminance value P23) and the target pixel 320 (luminance value P15, luminance value P25) are different. .

[0252] The brightness value P15 is preferably set to a value obtained by subtracting the difference X from the brightness value P13. It is preferable that 5 is a value obtained by adding the difference Y to the brightness value P13.

[0253] In this way, if the desired luminance values ​​of pixel 300 and target pixel 320 are equal, the first subpixel The sum of the time integral value of the luminance of the frame and the time integral value of the luminance of the second subframe is By making the pixel 300 and the target pixel 320 equivalent, the target pixel 320 can receive light as a light source. Even if the light is emitted, a natural image can be displayed.

[0254] Even if the desired luminance values ​​of the pixel 300 and the target pixel 320 are different, The sum of the time integral of the luminance of the first subframe and the time integral of the luminance of the second subframe is By making the adjustment, the luminance of the target pixel 320 can be set to a desired value.

[0255] One frame consists of a period in which an image is displayed and a period in which touch detection is performed while a black image is displayed. It may be divided into two subframes:

[0256] As shown in FIG. 11, in the subframe in which the target pixel 320 captures an image, the pixel 300 In the subframe where an image is displayed, black display may be performed (also called black image insertion or black insertion). By inserting a black image between the two images, it is possible to reduce motion blur and afterimages on the display device.

[0257] A detailed configuration of a display device according to one embodiment of the present invention will be described below with reference to FIGS. 12 and 13. Reveal.

[0258] [Display device 100A] FIG. 12A shows a cross-sectional view of the display device 100A.

[0259] The display device 100A includes a light receiving device 110 and a light emitting device 190.

[0260] The light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer The buffer layer 192 has a hole injection layer 194 and a common electrode 115 stacked in this order. The light-emitting layer 193 may have one or both of an organic compound layer and a hole transport layer. The buffer layer 194 may include one or both of an electron injection layer and an electron transport layer. The light emitting device 190 has a function of emitting visible light. The optical fiber OA may further include a light-emitting device capable of emitting infrared light.

[0261] The light receiving device 110 includes a pixel electrode 191, a buffer layer 182, an active layer 183, and a buffer layer The buffer layer 182 has a hole transport layer 184 and a common electrode 115 stacked in this order. The active layer 183 may include an organic compound. The buffer layer 184 may include: The light-receiving device 110 has a function of detecting visible light. The light receiving device 110 may further have a function of detecting infrared light.

[0262] In this embodiment, both the light-emitting device 190 and the light-receiving device 110 The explanation will be given assuming that the element electrode 191 functions as an anode and the common electrode 115 functions as a cathode. That is, the light receiving device 110 is reverse biased between the pixel electrode 191 and the common electrode 115. By driving the display device 100A with astigmatism, the display device 100A receives light incident on the light receiving device 110. It can be detected, generate a charge, and extract it as a current.

[0263] Pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183, light-emitting layer 193, The buffer layer 184, the buffer layer 194, and the common electrode 115 each have a single-layer structure. It may have a laminated structure.

[0264] The pixel electrodes 191 are located on the insulating layer 214. Each pixel electrode 191 is made of the same material and the same The edge of the pixel electrode 191 is covered with the partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. (also called electrically isolated).

[0265] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include: Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide resin. Amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and the resins The partition wall 216 is a layer that transmits visible light. Alternatively, a partition that blocks visible light may be provided.

[0266] The common electrode 115 is a layer that is used in common for the light receiving device 110 and the light emitting device 190. do.

[0267] The light receiving device 110 and the light emitting device 190 have a pair of electrodes made of the same material and having the same film thickness. This reduces the manufacturing cost of the display device and simplifies the manufacturing process. can.

[0268] The display device 100A includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 11 disposed between the substrates. 0, a light emitting device 190, a transistor 131, and a transistor 132.

[0269] In the light receiving device 110, the pixel electrodes 191 and the common electrode 115 are located between the pixel electrodes 191 and the common electrode 115. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. In the case of a configuration for detecting external light, the common electrode 115 has a function of transmitting infrared light. In addition, it is preferable that the pixel electrode 191 has a function of reflecting infrared light.

[0270] The light receiving device 110 has a function of detecting light. Specifically, the light receiving device 110 , a photoelectric conversion element that receives light 122 incident from outside the display device 100A and converts it into an electrical signal. The light 122 is light emitted from the light emitting device 190 and reflected by an object. The light 122 can also be projected through a lens or the like provided in the display device 100A. The light may be incident on the light receiving device 110 .

[0271] In the light-emitting device 190, the pixel electrodes 191 and the common electrode 115 are located between the pixel electrodes 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are collectively referred to as an EL layer. The EL layer has at least the light-emitting layer 193. As described above, the pixel electrode The common electrode 115 preferably has a function of reflecting visible light. The display device 100A has a light-emitting device that emits infrared light. In this configuration, the common electrode 115 has a function of transmitting infrared light. The pole 191 preferably has the function of reflecting infrared light.

[0272] The light-emitting device included in the display device of this embodiment is a micro-optical resonator (microcavity). ) structure is preferably applied.

[0273] The buffer layer 192 or the buffer layer 194 may function as an optical adjustment layer. By making the thickness of the buffer layer 192 or the buffer layer 194 different, In this case, it is possible to enhance and extract light of a specific color.

[0274] The light-emitting device 190 has a function of emitting visible light. By applying a voltage between the pixel electrode 191 and the common electrode 115, light is emitted to the substrate 152 side. It is an electroluminescent device that emits light (see light emission 121).

[0275] The pixel electrode 191 of the light receiving device 110 is connected to the insulating layer 214 through an opening. , is electrically connected to the source or drain of the transistor 131 .

[0276] The pixel electrode 191 of the light-emitting device 190 is connected to the insulating layer 214 through an opening. , is electrically connected to the source or drain of the transistor 132 .

[0277] The transistors 131 and 132 are formed on the same layer (substrate 151 in FIG. 12A). It is adjacent to.

[0278] At least a part of the circuit electrically connected to the light receiving device 110 is connected to the light emitting device 190. It is preferable that the circuit be formed from the same material and in the same process as the circuit to which it is electrically connected. This makes it possible to reduce the thickness of the display device compared to when the two circuits are formed separately. Furthermore, the manufacturing process can be simplified.

[0279] The light receiving device 110 and the light emitting device 190 are each covered with a protective layer 116. In FIG. 12A, the protective layer 116 is provided on and in contact with the common electrode 115. By providing the protective layer 116, the light-receiving device 110 and the light-emitting device 190 are protected from water and other The intrusion of impurities is suppressed, and the reliability of the light receiving device 110 and the light emitting device 190 is improved. In addition, the adhesive layer 142 can improve the adhesion between the protective layer 116 and the substrate 152. It's pasted together.

[0280] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is The light-emitting device 190 and the light-receiving device 110 have openings at positions overlapping each other. do.

[0281] Here, the light emitted by the light emitting device 190 is reflected by the object and received by the light receiving device 110. However, the light emitted from the light emitting device 190 is reflected within the display device 100A. The light may be incident on the light receiving device 110 without passing through an object. For example, if the light-shielding layer 158 is not provided, the influence of such stray light can be suppressed. If the substrate 152 is not reflective, the light 123 emitted by the light emitting device 190 is reflected by the substrate 152, resulting in reflected light 124. The light-shielding layer 158 may block the reflected light 12 4 can be prevented from entering the light receiving device 110. This reduces noise and The sensitivity of a sensor using the optical device 110 can be increased.

[0282] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting device. The light-shielding layer 158 preferably absorbs visible light. For example, a metal material can be used as the light-shielding layer 158. Or, black using a resin material containing a pigment (carbon black, etc.) or a dye. The light-shielding layer 158 can be formed as a matrix. The color filter may have a laminated structure of at least two layers of a white filter and a blue color filter. stomach.

[0283] [Display device 100B] 12B and 12C are cross-sectional views of the display device 100B. In this case, the description of the same configuration as the display device described above may be omitted.

[0284] The display device 100B includes a light-emitting device 190B, a light-emitting device 190G, and a light-receiving and light-emitting device It has a 190R-PD.

[0285] The light-emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, a buffer layer 194B, and a light-emitting layer 195B. The light-emitting device 190B includes a light-emitting layer 194B, a common electrode 115, and a gate electrode 116, stacked in this order. has the function of emitting blue light 121B.

[0286] The light-emitting device 190G includes a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, a buffer layer 195G, a buffer layer 196G, a buffer layer 197G, a buffer layer 198G, a buffer layer 199G, a buffer layer 191G, a buffer layer 192G, a buffer layer 193G, a buffer layer 194 The light-emitting device 190G includes a light-emitting layer 194G, a common electrode 115, and a light-emitting layer 194G. has the function of emitting green light 121G.

[0287] The light emitting / receiving device 190R-PD includes a pixel electrode 191, a buffer layer 192R, an active layer 183, and a , a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115 are laminated in this order. The light emitting / receiving device 190R-PD has the function of emitting red light 121R and detecting light 122. It has the function of:

[0288] FIG. 12B shows a case where the light emitting and receiving device 190R-PD functions as a light emitting device. In FIG. 12B, light-emitting device 190B emits blue light and light-emitting device 190G emits green light. 10B shows an example in which the light emitting and receiving device 190R-PD emits red light.

[0289] FIG. 12C shows a case where the light emitting and receiving device 190R-PD functions as a light receiving device. In FIG. 12C, the blue light emitted by light-emitting device 190B and the blue light emitted by light-emitting device 190G are 10 shows an example in which the light emitting and receiving device 190R-PD detects green light.

[0290] The display device 100B includes a pair of substrates (substrate 151 and substrate 152) and a light emitting and receiving device 1 disposed between the substrates. 90R-PD, light emitting device 190G, light emitting device 190B, and transistor 132 etc.

[0291] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are The pixel electrodes 191 are electrically insulated from each other by the partition wall 216. The source or drain of the transistor is electrically connected through the opening. can be.

[0292] The light emitting and receiving devices are preferably covered with a protective layer 116. In addition, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151.

[0293] [Display device 100C] FIG. 13A shows a cross-sectional view of the display device 100C.

[0294] The display device 100C includes a light receiving device 110 and a light emitting device 190.

[0295] The light-emitting device 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 in this order. The common layer 112 is one of a hole injection layer and a hole transport layer. The light-emitting layer 193 may include either one or both of the organic compounds. 4 may have one or both of an electron injection layer and an electron transport layer. The display device 100C further has a function of emitting infrared light. The light emitting device may have a function of emitting light.

[0296] The light receiving device 110 includes a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 laminated in this order. The active layer 183 includes an organic compound. The light receiving device 110 has a function of detecting visible light. Furthermore, it may have a function of detecting infrared light.

[0297] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common Each of the electrodes 115 may have a single layer structure or a multilayer structure.

[0298] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are The pixel electrodes 191 are electrically insulated from each other by the partition wall 216. The source or drain of the transistor is electrically connected through the opening. can be.

[0299] The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device. This layer is commonly used for the light receiving device 110 and the light emitting device 190. By making at least a part of the layers common to each other, the manufacturing process of the display device can be reduced, and it is preferable I wish.

[0300] The display device 100C includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 11 disposed between the substrates. 0, a light emitting device 190, a transistor 131, and a transistor 132.

[0301] The light receiving device 110 and the light emitting device 190 are each covered with a protective layer 116. In addition, the adhesive layer 142 bonds the protective layer 116 to the substrate 152. It has been done.

[0302] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is The light emitting device 190 is provided at a position overlapping the light receiving device 110. I can't.

[0303] The resin layer 159 is provided at a position overlapping the light emitting device 190, as shown in FIG. 13B, for example. The structure has an opening 159p at a position overlapping the light receiving device 110. Alternatively, the resin layer 159 may be formed on the light emitting device 19 as shown in FIG. 13C. 0 and is provided in an island shape at a position overlapping with the light receiving device 110. It is possible to have a configuration in which this is not the case.

[0304] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided at a position where it overlaps the light-emitting device 190 and at a position where it overlaps the light-receiving device 190. It has an opening at the position where it overlaps with the chair 110.

[0305] Here, the light emitted by the light emitting device 190 is reflected by the object and received by the light receiving device 110. However, the light emitted from the light emitting device 190 is reflected within the display device 100C. The light may be incident on the light receiving device 110 without passing through an object. Such stray light can be absorbed, and the stray light incident on the light receiving device 110 can be reduced. For example, the light blocking layer 158 passes through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. The light blocking layer 158 can absorb the stray light 123a before it reaches the resin layer 159. This allows the stray light 123b incident on the light receiving device 110 to be absorbed. Therefore, noise can be reduced and the light receiving device 110 can be used The sensitivity of the sensor can be increased. In particular, when the light-shielding layer 158 is close to the light-emitting device 190, It is preferable that the light-shielding layer 158 is positioned at the light-emitting device because it can further reduce stray light. If it is located close to 190°, the viewing angle dependency of the display can be suppressed, which improves the display quality. It is also preferable from the viewpoint.

[0306] Furthermore, by providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. In the direction perpendicular to the substrate 151, the light-shielding layer 158 can be If the camera is positioned further away from the target, the imaging range will be narrower and the imaging resolution can be increased.

[0307] When the resin layer 159 has an opening, the light-shielding layer 158 covers at least a part of the opening and the It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0308] When the resin layer 159 is provided in an island shape, the light-shielding layer 158 is formed on at least a portion of the side surface of the resin layer 159. It is preferable that the coating layer is at least partially covered.

[0309] In this way, the light-shielding layer 158 is provided along the shape of the resin layer 159, so that the light-shielding layer 158 to the light-emitting device 190 (specifically, the light-emitting region of the light-emitting device 190) is From the light-shielding layer 158 to the light-receiving device 110 (specifically, the light-receiving region of the light-receiving device 110) This allows for a reduction in sensor noise while increasing the image resolution. Therefore, the display device can be improved in terms of the viewing angle dependency of the display. This can improve both the display quality and the image quality.

[0310] The resin layer 159 is a layer that transmits light emitted from the light emitting device 190. The material of the resin layer 159 is Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide resin. Amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and the resins The structure provided between the substrate 152 and the light-shielding layer 158 is The thickness of the structure is not limited to a resin layer, and an inorganic insulating film or the like may be used. There is a difference between the distance from the optical layer to the light receiving device and the distance from the light blocking layer to the light emitting device. Since organic insulating films such as resins can be easily formed thick, they are suitable for the structure. is.

[0311] The distance from the light-shielding layer 158 to the light-receiving device 110 and the distance from the light-shielding layer 158 to the light-emitting device 19 0, for example, the end of the light-shielding layer 158 on the light-receiving device 110 side. the shortest distance L1 from the end of the light-shielding layer 158 to the common electrode 115 and the end of the light-shielding layer 158 on the light-emitting device 190 side The shortest distance L2 from the portion to the common electrode 115 can be used. In all cases, the shortest distance L2 is short, which suppresses stray light from the light-emitting device 190 and The sensitivity of the sensor using the sensor 110 can be improved. Also, the viewing angle dependency of the display can be suppressed. Since the shortest distance L1 is longer than the shortest distance L2, the light receiving device 1 The imaging range of the image sensor 10 can be narrowed, and the imaging resolution can be increased.

[0312] In addition, the adhesive layer 142 has a thickness smaller than that of the light-receiving device 190, compared to the portion overlapping the light-emitting device 190. By configuring the portion overlapping with 110 to be thick, the distance from the light-shielding layer 158 to the light-receiving device 110 can be reduced. and the distance from the light-shielding layer 158 to the light-emitting device 190. can be done.

[0313] Hereinafter, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to FIGS. 14 to 17. and explain.

[0314] [Display device 100D] FIG. 14 shows a perspective view of the display device 100D, and FIG. 15A shows a cross-sectional view of the display device 100D. vinegar.

[0315] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. , the substrate 152 is clearly shown by the dashed line.

[0316] The display device 100D includes a display unit 162, a circuit 164, wiring 165, etc. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100D. Therefore, the configuration shown in FIG. 14 is a display device having a display device 100D, an IC, and an FPC. It can also be called a display module.

[0317] The circuit 164 can be, for example, a scanning line driver circuit.

[0318] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are transmitted from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0319] In Figure 14, the COG (Chip On Glass) method or the COF (Chip On 1 shows an example in which an IC 173 is mounted on a substrate 151 by a film method or the like. 73 can be, for example, an IC having a scanning line driving circuit or a signal line driving circuit. The display device 100D and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0320] FIG. 15A shows a part of the area including the FPC 172, the circuit, and the like of the display device 100D shown in FIG. 164, a part of the area including the display unit 162, and a part of the area including the edge 1 shows an example of a cross section when each of the above is cut.

[0321] The display device 100D shown in FIG. 15A includes a transistor 24 between a substrate 151 and a substrate 152. 1, transistor 245, transistor 246, transistor 247, light-emitting device 19 0B, a light emitting device 190G, a light receiving and emitting device 190R-PD, etc.

[0322] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. The light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R-PD are sealed with a solid sealing structure. In FIG. 15A, a substrate 152, an adhesive layer 142, and The space surrounded by the insulating layer 214 is sealed by the adhesive layer 142 to form a solid sealing structure. It is applied.

[0323] The light-emitting device 190B is made up of a pixel electrode 191, a common layer 112, a light-emitting layer 113, and a 93B, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191 is connected to the conductive layer of the transistor 247 through an opening in the insulating layer 214. Transistor 247 is connected to layer 222b. Transistor 247 controls the driving of light-emitting device 190B. The edge of the pixel electrode 191 is covered by a partition wall 216. The electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. nothing.

[0324] The light-emitting device 190G is made up of a pixel electrode 191, a common layer 112, a light-emitting layer 113, and a 93G, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191 is connected to the conductive layer of the transistor 246 through an opening in the insulating layer 214. Transistor 246 is connected to layer 222b. Transistor 246 controls the driving of light-emitting device 190G. It has the function of controlling

[0325] The light emitting and receiving device 190R-PD is made up of a pixel electrode 191, a common layer 112, and a The active layer 183, the light-emitting layer 193R, the common layer 114, and the common electrode 115 are stacked in this order. The pixel electrode 191 is connected to the transistor through an opening provided in the insulating layer 214. The transistor 245 is electrically connected to the conductive layer 222b of the transistor 245. It has a function of controlling the driving of the light emitting and receiving device 190R-PD.

[0326] The light-emitting device 190B, the light-emitting device 190G, and the light-receiving and light-emitting device 190R-PD emit light. The light is emitted to the substrate 152 side. Light is incident on the substrate 152 through the adhesive layer 142. It is preferable to use a material that is highly permeable to .

[0327] The light-emitting device 190B, the light-emitting device 190G, and the light-receiving and light-emitting device 190R-PD have The pixel electrode 191 can be fabricated using the same material and process. The conductive layer 114 and the common electrode 115 are connected to the light-emitting device 190B, the light-emitting device 190G, and the receiving The light emitting device 190R-PD is commonly used. The active layer 183 is added to the configuration of the light emitting device that emits red light. The device 190B, the light-emitting device 190G, and the light-receiving and light-emitting device 190R-PD are formed by using an active layer 1 The light emitting layers 83 and 193 of each color may have the same configuration except for the different configurations. This allows the display unit 162 of the display device 100D to have a light receiving device without significantly increasing the manufacturing process. Noh can be added.

[0328] The light-emitting layer of the light-emitting device overlaps with the light-emitting layer and active layer of the light-receiving and light-emitting device. Similarly, the light-emitting layer of a light-emitting device may have a portion that is different from that of another light-emitting device. The light-emitting layer may have a portion overlapping with the light-emitting layer of the display device. For example, in FIG. 15B, the receiving and transmitting portions are arranged on the partition wall 216. The light-emitting device 190R-PD has an active layer 183 and a light-emitting layer 193R on the active layer 183 and the light-emitting layer 193R. 19 shows an example in which a light-emitting layer 193G of a semiconductor substrate 190G overlaps with a light-emitting layer 193G of a semiconductor substrate 190G.

[0329] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is The light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R-PD By providing the light-shielding layer 158, the light-receiving and light-emitting device 190R has an opening at a position where the light-shielding layer 158 overlaps the light-receiving and light-emitting device 190R. As described above, the light receiving and emitting device 190 can control the range in which the PD detects light. By adjusting the position of the opening in the light-shielding layer that is placed at the position overlapping the R-PD, It is preferable to control the light incident on the object by providing the light blocking layer 158. Light is incident from the light emitting device 190 to the light receiving and emitting device 190R-PD without passing through the Therefore, a sensor with low noise and high sensitivity can be realized.

[0330] Transistor 241, transistor 245, transistor 246, and transistor 24 7 are all formed on a substrate 151. These transistors are made of the same material and The same process can be used to manufacture the same.

[0331] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 has a portion serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. An insulating layer 214 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. The number of insulating layers covering the star is not limited, and each may be a single layer or two or more layers.

[0332] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such that the insulating layer can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the noise and improves the reliability of the display device.

[0333] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Also, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, etc. can be used. tungsten oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film , magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film, etc. In addition, two or more of the above insulating films may be stacked. A base film may be provided between the transistor and the insulating film. can be done.

[0334] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the edge of the display device 100D. Therefore, it is possible to prevent impurities from entering from the end of the display device 100D through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the edge of the organic insulating film is located inside the edge of the display device 100D. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100D.

[0335] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0336] A protection covering the light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R-PD By providing the protective layer 116, the light emitting device 190B, the light emitting device 190G, the light receiving and emitting device The device 190R-PD is protected from impurities such as water, and the light-emitting device 190B, This can improve the reliability of the light emitting device 190G and the light receiving and emitting device 190R-PD.

[0337] In the region 228 shown in FIG. 15A, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the insulating layer 214, the display unit Therefore, the reliability of the display device 100D can be improved. It can be increased.

[0338] In a region 228 near the edge of the display device 100D, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 116 contact each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 116 are in contact with each other. This prevents impurities from entering the display section 162 from the outside via the organic insulating film. Therefore, the reliability of the display device 100D can be improved.

[0339] The protective layer 116 may have a single layer or a laminate structure. For example, the protective layer 116 may be an organic The insulating film may have a laminated structure with an inorganic insulating film. It is preferable that the end of the organic insulating film extends outward.

[0340] Transistor 241, transistor 245, transistor 246, and transistor 24 7 is a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, The conductive layer 222a and the conductive layer 222b functioning as a source and a drain, and the semiconductor layer 231 , an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 22 functioning as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconducting layer 231 .

[0341] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses a staggered transistor, a staggered transistor, an inverted staggered transistor, etc. In addition, either a top-gate type or a bottom-gate type transistor structure can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. Good too.

[0342] Transistor 241, transistor 245, transistor 246, and transistor 24 7, a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied. The transistor is driven by connecting two gates and applying the same signal to them. Alternatively, a potential for controlling the threshold voltage may be applied to one of the two gates. The threshold voltage of the transistor may be controlled by applying a driving potential to the other.

[0343] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor with crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0344] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. are amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.) ) etc.

[0345] The semiconductor layer may be made of, for example, indium and M (M is gallium, aluminum, silicon, fluorine, etc.). Uron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from the group consisting of tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the organic solvent is one or more selected from the group consisting of:

[0346] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (Indium Zirconate Oxide).

[0347] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide The atomic ratio of In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of elements is In:M:Zn=1:1:1 or a composition close to that. Zn=1:1:1.2 or a similar composition, In:M:Zn=2:1:3 or a similar composition Near composition, In:M:Zn=3:1:2 or nearby composition, In:M:Zn=4:2 :3 or a composition thereof, In:M:Zn=4:2:4.1 or a composition thereof, I n:M:Zn=5:1:3 or a composition close thereto, In:M:Zn=5:1:6 or a composition close thereto In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5 :1:8 or a composition thereof, In:M:Zn=6:1:6 or a composition thereof, I Examples include compositions of n:M:Zn=5:2:5 or the vicinity thereof. includes a range of ±30% of the desired atomic ratio.

[0348] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition in the vicinity When the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is This includes cases where the ratio is 2 or more and 4 or less. Also, the atomic ratio is In:Ga:Zn=5:1:6 or less. When describing a composition in the vicinity of or near the atomic ratio of Ga, the atomic ratio of In is set to 5. This includes cases where the atomic ratio of Zn is greater than 0.1 and less than 2, and the atomic ratio of Zn is greater than 5 and less than 7. In addition, when describing a composition in which the atomic ratio is In:Ga:Zn=1:1:1 or in the vicinity thereof, When the atomic ratio of n is 1, the atomic ratio of Ga is greater than 0.1 and is not greater than 2, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than 2.

[0349] The transistors included in the circuit 164 and the transistors included in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0350] A connection portion 244 is provided in the area of ​​the substrate 151 where the substrate 152 does not overlap. In the portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 244 is made of the same conductive film as the pixel electrode 191. The resulting conductive layer 166 is exposed. This allows the connection portion 244 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0351] Various optical members can be arranged on the outside of the substrate 152. Examples of optical members include a polarizing plate. Examples of the optical film include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that protects the surface, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0352] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, resin, etc. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0353] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as elastomeric adhesives and anaerobic adhesives can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl Chloride) Resin, PVB (Polyvinyl Butyral) Resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low viscosity is preferable. Two-component resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0354] The connection layer is made of anisotropic conductive film (ACF). tive Film), Anisotropic Conductive Paste (ACP) Inductive Paste) can be used.

[0355] The configurations and materials of the light-emitting devices 190G and 190B and the light-receiving and light-emitting device 190R-PD For details, please refer to the above description.

[0356] In addition to the gate, source, and drain of the transistor, various wiring and power supply components that make up the display device are also included. Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as tungsten, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0357] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g., For example, titanium nitride) may be used. When using a material, it is preferable to make it thin enough to have light-transmitting properties. For example, a laminated film of an alloy of silver and magnesium and an indium alloy can be used as the conductive layer. It is preferable to use a laminated film of tungsten oxide or the like, since this can increase the conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, light-emitting devices, and light-receiving devices. The conductive layer (which functions as a pixel electrode or a common electrode) of the device (or light-receiving / light-emitting device) It can also be used for the conductive layer.

[0358] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0359] [Display device 100E] 16 and 17A show cross-sectional views of the display device 100E. It is the same as the display device 100D (FIG. 14). 72, a part of the circuit 164, and a part of the display unit 162 are cut out. 17A shows an example of a cross section of a part of the display unit 162 of the display device 100E. FIG. 16 shows an example of a cross section of the display unit 162, particularly the light receiving device. 1 is a cross section of a region including the light emitting device 110 and the light emitting device 190R that emits red light. 17A shows an example of a display unit 162, in which a light-emitting device 1 that emits green light is specifically shown. 90G and an example of a cross section when a region including a light emitting device 190B that emits blue light is cut. Shows.

[0360] The display device 100E shown in FIGS. 16 and 17A has a transistor between the substrate 153 and the substrate 154. Transistor 243, transistor 248, transistor 249, transistor 240, light-emitting diode a light-emitting device 190R, a light-emitting device 190G, a light-emitting device 190B, and a light-receiving device 11 0 etc.

[0361] The resin layer 159 and the common electrode 115 are bonded together via an adhesive layer 142, and the display device 10 The 0E uses a solid sealing structure.

[0362] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The insulating layer 157 is bonded to the substrate 151 by an adhesive layer 156 .

[0363] The method for manufacturing the display device 100E is as follows: first, the insulating layer 212, the transistors, the light-receiving device The first substrate on which the light emitting devices and the like are provided is made up of an insulating layer 157 and a resin layer 110. 59 and a second substrate on which a light-shielding layer 158 and the like are provided are bonded by an adhesive layer 142. Then, the first fabrication substrate is peeled off and the substrate 153 is attached to the exposed surface, and the second fabrication substrate is attached. The substrate is peeled off and a substrate 154 is attached to the exposed surface, so that the first fabrication substrate and the second fabrication substrate are The components formed on the plate are transferred to the substrate 153 and the substrate 154. It is preferable that each of the plates 154 is flexible. The flexibility of the film can be increased.

[0364] The insulating layer 212 and the insulating layer 157 are respectively formed by the insulating layer 211, the insulating layer 213, and the insulating layer 157. An inorganic insulating film that can be used for the layer 215 can be used.

[0365] The light-emitting device 190R is made up of, from the insulating layer 214b side, a pixel electrode 191, a common layer 112, and a light-emitting layer 193R, the common layer 114, and the common electrode 115 are stacked in this order. The electrode 191 is connected to the conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the conductive layer 222b provided in the insulating layer 215. The pixel electrode 191 is connected to the low resistance region 231n through the opening. Transistor 248 is electrically connected to the light emitting device 190R. It has the function of controlling the drive.

[0366] Similarly, the light-emitting device 190G is formed by connecting the pixel electrode 191 and the common layer 112 from the insulating layer 214b side. The light-emitting layer 193G, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the conductive layer 169 and the conductive layer 222b of the transistor 249. , and is electrically connected to the low resistance region 231n of the transistor 249. 91 is electrically connected to the transistor 249. The transistor 249 is It has the function of controlling the drive of the Vise 190G.

[0367] The light-emitting device 190B is formed by connecting the pixel electrode 191 and the common layer 112 from the insulating layer 214b side. The light-emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the conductive layer 169 and the conductive layer 222b of the transistor 240. , and is electrically connected to the low resistance region 231n of the transistor 240. 91 is electrically connected to the transistor 240. The transistor 240 is a light-emitting device. It has a function of controlling the driving of the vise 190B.

[0368] The light receiving device 110 is made up of a pixel electrode 191, a common layer 112, an active layer 113, and a semiconductor layer 114b. 83, a common layer 114, and a common electrode 115 are laminated in this order.

[0369] The edge of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 emits visible light. The common electrode 115 comprises a material that is transparent to visible light.

[0370] The light emitted from the light emitting devices 190R, 190G, and 190B is emitted toward the substrate 154. Furthermore, light is incident on the light-receiving device 110 through the substrate 154 and the adhesive layer 142 . The substrate 154 is preferably made of a material that is highly transparent to visible light.

[0371] Each pixel electrode 191 can be made of the same material and in the same process. The common layer 114 and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device 190R. The light receiving device 110 and the light emitting devices of each color are used in common for 190G and 190B. The structures of the active layer 183 and the light-emitting layer are different, but the structures of the two layers can be the same. This allows the light receiving device 110 to be mounted on the display device 100E without significantly increasing the number of manufacturing steps. It can be built-in.

[0372] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light emitting devices 190R, 190G, and 190B. The light-shielding layer 158 is not provided at a position where it overlaps with the light-receiving device 110. The surface of the resin layer 159 on the substrate 153 side, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side are covered. The light-shielding layer 158 is provided at a position overlapping the light-receiving device 110 and at a position overlapping the light-emitting device 190. The light-shielding layer 158 has openings at positions overlapping with the R, 190G, and 190B. This allows the range in which the light receiving device 110 detects light to be controlled. 158, the light emitting devices 190R, 190G, and 190B can be illuminated without passing through the object. Therefore, the light receiving device 110 can be prevented from being incident on the light receiving device 110. By providing the resin layer 159, the light from the light-shielding layer 158 can be prevented from passing through the resin layer 159. The distance from the light-shielding layer 158 to the light-receiving device 110 is This reduces sensor noise while suppressing the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the image quality.

[0373] As shown in FIG. 16, the partition wall 216 is disposed between the light receiving device 110 and the light emitting device 190R. The light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219 is located between the light-receiving device 110 and the light-emitting device 190R. a absorbs the light emitted by the light-emitting device 190R. It is possible to suppress incident stray light.

[0374] The spacer 219b is provided on the partition wall 216, and the light emitting device 190G and the light emitting device 190G are spaced apart from each other. 90B. The upper surface of the spacer 219b is located between the light-shielding layer 219a and the light-shielding layer 219b. It is preferable that the thickness of the partition wall 216 is close to the layer 158. For example, the height (thickness) of the partition wall 216 and the spacer 219b The sum of the heights (thicknesses) of the light-shielding layer 219a is preferably greater than the height (thickness) of the light-shielding layer 219b. This makes it easier to fill the adhesive layer 142. As shown in FIG. In the area where 219b and the light-shielding layer 158 overlap, the light-shielding layer 158 is in contact with the common electrode 115 (or The protective layer may be in contact with the film.

[0375] A connection portion 244 is provided in the area of ​​the substrate 153 where the substrate 154 does not overlap. In the portion 244, the wiring 165 is connected to the F via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 is electrically connected to the PC 172. The conductive layer 167 is made of the same conductive film as the conductive layer 169. The upper surface of the connection portion 244 is formed by processing the same conductive film as the pixel electrode 191. The conductive layer 166 obtained by the process is exposed. can be electrically connected via the connection layer 242.

[0376] Transistor 243, transistor 248, transistor 249, and transistor 24 0 is a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low resistance regions 231n; The conductive layer 222a is connected to one of the pair of low resistance regions 231n, and the conductive layer 222b is connected to the other of the pair of low resistance regions 231n. a conductive layer 222b connecting the gate electrode to the insulating layer 225; The insulating layer 211 includes a conductive layer 223 and an insulating layer 215 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 221 and the channel forming region 231i. 23 and the channel forming region 231i.

[0377] The conductive layer 222a and the conductive layer 222b are each formed through an opening in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is connected to the low resistance region 231n. One acts as a source and the other acts as a drain.

[0378] 16 and 17A, the insulating layer 225 is formed in the channel forming region 23 of the semiconductor layer 231. For example, the conductive layer 223 is insulated by a mask. The edge layer 225 can be processed to produce the structure shown in Figures 16 and 17A. In FIG. 17A, an insulating layer 215 is provided over the insulating layer 225 and the conductive layer 223. The conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231 through the openings in the insulating film 215. n. Furthermore, an insulating layer may be provided to cover the transistor.

[0379] On the other hand, in the transistor 252 shown in FIG. 17B, the insulating layer 225 is formed on the top and side surfaces of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are covered with the insulating layer 225 and the insulating layer 226, respectively. It is connected to the low resistance region 231n through an opening provided in the edge layer 215.

[0380] As described above, the display device of one embodiment of the present invention has at least two types of pixels. The blue subpixel of one pixel emits light with a shorter wavelength than the blue subpixel of the other pixel. The two blue sub-pixels have different luminescent materials and different optical adjustment layer thicknesses. By applying one or more of the following configurations, Therefore, two types of blue sub-pixels having different visibility can be provided in the display device. Since at least some of the pixels of the device have a light receiving function, the device can detect the object while displaying an image. It can detect contact or proximity. There are two types of sub-pixels used as light sources. By using sub-pixels that emit light of shorter wavelengths, the light from the light source is visible to the user. This reduces distortion and allows for natural image display.

[0381] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0382] (Embodiment 2) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0383] [Pixel circuit example 1] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving device and a light-emitting and a second pixel circuit having a device. The first pixel circuit and the second pixel circuit are They are arranged in a matrix.

[0384] FIG. 18A shows an example of a first pixel circuit having a light-receiving device, and FIG. 18B shows an example of a first pixel circuit having a light-emitting device. 1 shows an example of a second pixel circuit having a

[0385] The pixel circuit PIX1 shown in FIG. 18A includes a light receiving device PD, a transistor M1, a transistor The photodiode includes a photodiode M2, a transistor M3, a transistor M4, and a capacitor C1. An example is shown in which a photodiode is used as the device PD.

[0386] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the anode of the light receiving device PD is electrically connected to the wiring V2. The gate of the transistor M1 is electrically connected to either the source or the drain of the transistor M2. The other of the source and drain is electrically connected to one electrode of the capacitor C1. The source or drain of transistor M2 is electrically connected to the gate of transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other input is electrically connected to the wiring V2. One of the source and drain is electrically connected to the wiring V3, and the other of the source and drain is The gate of the transistor M4 is electrically connected to the wiring S E, and the other of the source or drain is electrically connected to the wiring OUT1.

[0387] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When D is driven with a reverse bias, a potential lower than the potential of the wire V1 is applied to the wire V2. The transistor M2 is controlled by a signal supplied to the wiring RES. The potential of the node connected to the gate of the transistor M3 is reset to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX. The function is to control the timing when the potential of the above nodes changes depending on the current flowing through the device PD. The transistor M3 serves as an amplifier transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE. A selection transistor is used to read out the output according to the potential of the board using an external circuit connected to wiring OUT1. It functions as a register.

[0388] The pixel circuit PIX2 shown in FIG. 18B includes a light-emitting device EL, a transistor M5, a transistor Here, the light emitting device EL is In particular, an example using an organic EL device as the light-emitting device EL is shown. It is preferable to use a vice.

[0389] The transistor M5 has a gate electrically connected to the wiring VG and a source or a drain is electrically connected to the wiring VS, and the other of the source or drain is connected to one electrode of the capacitance C2, and the gate of the transistor M6. One of the drains is electrically connected to the wiring V4, and the other is connected to the anode of the light-emitting device EL, Electrically connected to either the source or the drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2. The cathode of the light-emitting device EL is electrically connected to the wiring V5.

[0390] A constant potential is supplied to the wiring V4 and the wiring V5. The cathode side can be set to a higher potential than the anode side, and the cathode side can be set to a lower potential than the anode side. M5 is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor for It functions as a driving transistor that controls the current flowing through the light-emitting device EL according to the potential applied to the When the transistor M5 is in a conducting state, the potential supplied to the wiring VS is The potential is supplied to the gate of M6, and the luminance of the light-emitting device EL is controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS. The potential between M6 and the light emitting device EL is output to the outside via the wiring OUT2. do.

[0391] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the cathode of the light emitting device EL is electrically connected to the wiring V2. The wiring V5 to which the nodes are electrically connected can be in the same layer and at the same potential.

[0392] In the display device according to one embodiment of the present invention, the transistors included in the pixel circuits PIX1 and PIX2 All transistors have a metal oxide (also called oxide semiconductor) in the semiconductor layer where the channel is formed. ) (hereinafter also referred to as OS transistor) is preferably used. OS transistors have extremely low off-state current and are The charge stored in the OS transistor can be maintained for a long period of time. By using the above, the power consumption of the display device can be reduced.

[0393] Alternatively, in the display device of one embodiment of the present invention, the pixel circuits PIX1 and PIX2 each include All of the transistors used in this study have silicon in the semiconductor layer where the channel is formed. It is preferable to use silicon transistors (hereinafter also referred to as Si transistors). Examples include crystalline silicon, polycrystalline silicon, and amorphous silicon. Polysilicon (LTPS (Low Temperature Poly-Silicon )) (hereinafter also referred to as an LTPS transistor) is preferably used. LTPS transistors have high field-effect mobility and are capable of high-speed operation.

[0394] Furthermore, by using Si transistors such as LTPS transistors, it is possible to This makes it easy to build the various circuits that make up the display unit on the same substrate. This simplifies the external circuitry mounted on the display device, reducing component and mounting costs. It is possible.

[0395] Alternatively, in the display device of one embodiment of the present invention, two types of transistors are included in the pixel circuit PIX1. Specifically, the pixel circuit PIX1 includes an OS transistor and an LTP transistor. It is preferable to have an S transistor. By changing the material of the semiconductor layer, the quality of the pixel circuit PIX1 can be improved, resulting in improved sensing and imaging precision. At this time, the pixel circuit PIX2 includes an OS transistor and an LT Either one or both of the PS transistors may be used.

[0396] Furthermore, two types of transistors (e.g., OS transistor and LTPS transistor) are used in the pixel. Even when using a CMOS circuit, the use of LTPS transistors allows This makes it easy to integrate various circuits into the display unit on the same substrate. The external circuitry can be simplified, reducing component and implementation costs. can.

[0397] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the current. Therefore, it is possible to maintain the capacitance of the transistor connected in series to the capacitor C1 or the capacitor C2. OS transistors are used for the transistors M1, M2, and M5. It is preferable that

[0398] It is also preferable to use a Si transistor for the transistor M3. The imaging data can be read out at high speed.

[0399] The display unit includes a first pixel circuit having a light-receiving device and a second pixel circuit having a light-emitting device. The display device having the pixel circuit has an image display mode, an image capture mode, and an image display mode. The camera can be driven in either a mode in which the image is displayed and a mode in which the image is captured simultaneously. For example, a light-emitting device can be used to display a full-color image. In the imaging mode, for example, a light-emitting device is used to emit an image to be captured (for example, a monochrome green, blue A mode in which an image can be captured using a light-receiving device. For example, fingerprint authentication can be performed. Also, image display and image capture can be performed simultaneously. In the mode, for example, some pixels display an image to be captured using a light-emitting device, and , the light-receiving device is used to capture an image, and the remaining pixels are used to capture a full color image using the light-emitting device. You can display images of the

[0400] [Pixel circuit example 2] A display device according to one embodiment of the present invention includes a third pixel circuit having a light-emitting and receiving device and a light-emitting and a second pixel circuit having a photodevice. The third pixel circuit and the second pixel circuit are The second pixel circuit is arranged in a matrix. B).

[0401] FIG. 18C shows an example of a third pixel circuit having an emitting and receiving device.

[0402] The pixel circuit PIX3 shown in FIG. 18C is a light receiving / emitting device that emits red light and has a light receiving function. For example, a pixel of the display device includes a pixel circuit PIX3 and A pixel circuit PIX2 having a light-emitting device that emits green light and a light-emitting device that emits blue light and a pixel circuit PIX2 having a pixel element.

[0403] The pixel circuit PIX3 further includes a transistor M8, a transistor M9, a transistor M1 0, transistor M11, transistor M12, transistor M13, transistor M1 The transistor M4 has a capacitance Csr and a capacitance Cf. The transistor M11, the transistor M12, and the transistor M14 are switches. It functions as:

[0404] The transistor M8 has a gate electrically connected to the wiring GL and a source and a drain The first terminal is electrically connected to the wiring SLR, and the second terminal is connected to the gate of the transistor M9 and one of the capacitors Csr. The transistor M9 has one of its source and drain electrically connected to the other. One of the source and drain of transistor M10, one of the source and drain of transistor M11 The other electrode of the capacitor Csr and the anode of the light emitting and receiving device 190R-PD are connected to the The other end is electrically connected to the wiring ANODE. The gate is electrically connected to the wiring GL, and the other of the source and drain is electrically connected to the wiring V0. The transistor M11 has a gate electrically connected to the wiring TX and a source The other of the drain and source of the transistor M12 is the source or drain of the transistor M The transistor M12 is electrically connected to the gate of the transistor M13 and one electrode of the capacitor Cf. In the case of the transistor, the gate is electrically connected to the wiring RS, and the other of the source and the drain is electrically connected to the wiring VRS. The transistor M13 has one of its source and drain electrically connected to the transistor M 14, and the other is electrically connected to the wiring VPI. The transistor M14 has a gate electrically connected to the wiring SE, and a source and a drain The other electrode of the capacitor Cf is electrically connected to the wiring VCP. The cathode of the light emitting / receiving device 190R-PD is electrically connected to the It is electrically connected to the VPD.

[0405] The wiring GL, the wiring SE, the wiring TX, and the wiring RS each have a transistor that controls the operation of the transistor. A signal is provided to control the

[0406] When an image is displayed, an image signal VdataR is supplied to each of the lines SLR.

[0407] Wiring V0, wiring VPI, wiring VCP, wiring VRS, wiring ANODE, and wiring CATHO A predetermined potential is supplied to each of the DE and VPD. A potential Vo (for example, 0 V) ​​corresponding to the black display of R is supplied to the wiring VPI. A potential higher than the range of the gate voltage of the transistor M13 is supplied to the wiring VCP. A voltage (for example, 0V) can be supplied to the wiring VRS. A potential lower than D is supplied to the wiring ANODE. A higher potential is supplied to the

[0408] The wiring CATHODE / VPD and the wiring V5 shown in FIG. 18B are in the same layer and have the same potential. It is possible.

[0409] The transistors M8 and M10 are controlled by a signal supplied to the wiring GL. , functioning as a selection transistor for controlling the selection state of the pixel.

[0410] The transistor M9 outputs a voltage to the light-emitting device 190R-PD in response to the potential supplied to its gate. It functions as a drive transistor that controls the flow of current.

[0411] When the transistor M8 is in a conducting state, the transistor M10 is also in a conducting state at the same time. The potential supplied to the line SLR (for example, the image signal VdataR) is applied to the gate of the transistor M9. The potential Vo supplied to the wiring V0 is applied to the source or drain of the transistor M10. The capacitor Csr stores a charge according to the voltage VdataR-Vo. The light emitting and receiving device 190R-PD is connected to the potential of the node GR (the gate of the transistor M9). It can emit light with a brightness that depends on the gate potential.

[0412] The transistor M11 is controlled by a signal supplied to the wiring TX, and the light emitting / receiving device 19 A function that controls the timing at which the potential of node FD changes according to the current flowing through OR-PD. The transistor M12 is controlled by a signal supplied to the wiring RS. The potential of the node FD connected to the gate of the transistor M13 is reset to the potential supplied to the wiring VRS. The transistor M13 has the function of outputting an amplifier that outputs a signal according to the potential of the node FD. The transistor M14 functions as a width transistor. The output corresponding to the potential of the node FD is read out by an external circuit connected to the wiring WX. It functions as a select transistor for

[0413] The display unit includes a third pixel circuit having a light-receiving device and a second pixel circuit having a light-emitting device. The display device having the pixel circuit is operable in a mode for displaying an image, a mode for capturing an image, and a mode for displaying an image. The image display mode can be driven in either a mode in which image display and image capture are performed simultaneously. In the LCD panel, for example, a full-color image is displayed using a light-receiving and light-emitting device. In the imaging mode, for example, a light emitting device is used to illuminate the image to be captured. It is possible to display an image (for example, a single green or blue color) and capture the image using a light-receiving and light-emitting device. In the image capture mode, for example, fingerprint authentication can be performed. In a mode in which display and image capture are performed simultaneously, for example, some pixels are illuminated using light-emitting devices. An image to be captured is displayed, and an image is captured using the light receiving and emitting device, and the light receiving and emitting elements of the remaining pixels are used. Light emitting devices and light emitting devices can be used to display full color images.

[0414] In the display device according to one embodiment of the present invention, the transistors included in the pixel circuits PIX3 and PIX2 It is preferable to use OS transistors for all of the transistors. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time. Furthermore, by using an OS transistor, it is possible to This can reduce the power consumption of the device.

[0415] Alternatively, in the display device of one embodiment of the present invention, the pixel circuits PIX3 and PIX2 each include It is preferable to use Si transistors for all transistors used. It is preferable to use a LTPS transistor. High speed operation is possible.

[0416] Furthermore, by using Si transistors such as LTPS transistors, it is possible to This makes it easy to build the various circuits that make up the display unit on the same substrate. This simplifies the external circuitry mounted on the display device, reducing component and mounting costs. It is possible.

[0417] Alternatively, in the display device of one embodiment of the present invention, two types of transistors are included in the pixel circuit PIX3. Specifically, the pixel circuit PIX3 includes an OS transistor and an LTP transistor. It is preferable to have an S transistor. By changing the material of the semiconductor layer, the quality of the pixel circuit PIX3 can be improved, resulting in improved sensing and imaging precision. At this time, the pixel circuit PIX2 includes an OS transistor and an LT Either one or both of the PS transistors may be used.

[0418] Furthermore, two types of transistors (e.g., OS transistor and LTPS transistor) are used in the pixel. Even when using a CMOS circuit, the use of LTPS transistors allows This makes it easy to integrate various circuits into the display unit on the same substrate. The external circuitry can be simplified, reducing component and implementation costs. can.

[0419] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the current. Therefore, it is possible to maintain the capacitance in series with the capacitance C2, capacitance Csr, or capacitance Cf. The transistors M8, M10, M11, and M2 connected to It is preferable to use an OS transistor for the transistor M12.

[0420] It is also preferable to use a Si transistor for the transistor M13. Therefore, the image data can be read out at high speed.

[0421] 18A to 18C, the transistors are assumed to be n-channel transistors. Although it is shown as a transistor, a p-channel transistor can also be used. The transistor is not limited to a single gate, and may further have a back gate.

[0422] The position where the light receiving device PD, the light emitting device EL, or the light receiving and emitting device 190R-PD overlaps It is preferable to provide one or more layers having one or both of a transistor and a capacitor in the device. This makes it possible to reduce the effective area occupied by each pixel circuit, thereby enabling a high-definition display section to be realized. It can be realized.

[0423] This embodiment mode can be combined with other embodiment modes as appropriate.

[0424] (Embodiment 3) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. Metal oxides (also called oxide semiconductors) will be described.

[0425] The metal oxide preferably contains at least indium or zinc, particularly indium. and zinc. In addition to these, aluminum, gallium, yttrium, It is preferable that the material contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One selected from aluminum, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0426] Metal oxides can be deposited by sputtering, metal organic chemical vapor deposition (MOCVD), Organic Chemical Vapor Deposition (OCCVD) method Chemical Vapor Deposition (CVD) method, By using atomic layer deposition (ALD) method, It can be formed.

[0427] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous). ous), CAAC (c-axis-aligned crystalline) , nc(nanocrystalline), CAC(cloud-aligned c composite, single crystal, and polycrystalline crystal) etc.

[0428] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). For example, GIXD (Grazing-on) spectra can be used to evaluate the It can be evaluated using the XRD spectrum obtained by the (Echo-Incidence XRD) measurement. The GIXD method is also known as the thin film method or the Seemann-Bohlin method.

[0429] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetrical. On the other hand, in the IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetric. The asymmetric shape of the peak in the XRD spectrum indicates that the film or the substrate In other words, the shape of the peaks in the XRD spectrum clearly shows the presence of crystals in the left and right. If it is not, the film or substrate cannot be said to be in an amorphous state.

[0430] The crystal structure of the film or substrate was also analyzed by nanobeam electron diffraction (NBED). Diffraction patterns observed by electron diffraction (microelectron For example, the diffraction pattern of a quartz glass substrate can be evaluated by A halo is observed in the pattern, confirming that the silica glass is in an amorphous state. In addition, the diffraction pattern of the IGZO film formed at room temperature shows a spot-like pattern rather than a halo. Therefore, the IGZO film formed at room temperature is not in a crystalline state, but in an amorphous state. It is not considered to be in an amorphous state, but rather an intermediate state, and it cannot be concluded that it is in an amorphous state. .

[0431] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and quasi-amorphous oxide semiconductors. amorphous-like oxide semiconductor (a-like OS) conductor), amorphous oxide semiconductor, etc.

[0432] Here, for details of the above-mentioned CAAC-OS, nc-OS, and a-like OS, Give an explanation.

[0433] [CAAC-OS] The CAAC-OS has multiple crystalline regions, each of which has its c-axis aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed or the direction normal to the surface of the CAAC-OS film. The crystalline region is a region in which the atomic arrangement has periodicity. When viewed as an arrangement, the crystalline region is also a region with a uniform lattice arrangement. S has a region where multiple crystalline regions are connected in the ab-plane direction, and this region has strain. The distortion is a distortion of the lattice arrangement in the region where multiple crystal regions are connected. A place where the orientation of the lattice arrangement changes between a uniform area and a uniform area with a different lattice arrangement. In other words, CAAC-OS has a c-axis orientation and no clear orientation in the ab-plane direction. It is an oxide semiconductor that does not contain

[0434] Each of the plurality of crystalline regions is made up of one or more minute crystals (maximum diameter 10n If a crystalline region is made up of a single microcrystal, The maximum diameter of the crystalline region is less than 10 nm. When the crystallized region is formed, the size of the crystallized region may be approximately several tens of nanometers.

[0435] In-M-Zn oxide (where element M is aluminum, gallium, yttrium, or tin) In the case of titanium, CAAC-OS is one or more selected from the group consisting of indium and titanium. A layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) are A layered crystal structure (also called a layered structure) is formed by stacking a layer having the formula (hereinafter, the (M, Zn) layer) and a layer having the formula (hereinafter, the (M, Zn) layer). ) It should be noted that indium and element M can be substituted for each other. The (M,Zn) layer may contain indium. The In layer may contain the element M. The In layer may contain Zn. The layered structure may be, for example, High-resolution TEM (Transmission Electron Microscope) ) image, it is observed as a lattice image.

[0436] For example, when the structure of the CAAC-OS film is analyzed using an XRD device, the θ / 2θ shift In the out-of-plane XRD measurement using a tuner, the peak indicating the c-axis orientation was = 31° or its vicinity. The position of the peak indicating the c-axis orientation (2θ value) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0437] In addition, for example, in the electron diffraction pattern of the CAAC-OS film, multiple bright spots (spots) ) is observed. Note that one spot and another spot are the result of the incident electron beam passing through the sample. The spot (also called the direct spot) is the center of symmetry and the observed positions are point-symmetric. .

[0438] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is a hexagonal lattice. The unit cell is not necessarily a regular hexagon, but may be a non-regular hexagon. The above distortion may have a lattice arrangement such as a pentagon or heptagon. In the OS, clear grain boundaries were confirmed even near the strain. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because the arrangement of oxygen atoms in the CAAC-OS is dense in the ab-plane direction. The metal atoms are replaced by other atoms, which changes the bond distance between the atoms. This is thought to be because distortion can be tolerated.

[0439] The crystal structure in which clear grain boundaries are observed is called polycrystalline. The grain boundaries act as recombination centers, trapping carriers and forming transistor on-states. Therefore, it is highly likely that this will cause a decrease in the on-state current and a decrease in the field-effect mobility. CAAC-OS, which has no visible grain boundaries, has a crystal structure suitable for the semiconductor layer of a transistor. It is one of the crystalline oxides that can be used to form CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferable. This is preferable because it can suppress the occurrence of grain boundaries more effectively than the material.

[0440] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to the decrease in electron mobility caused by the grain boundaries. In addition, the crystallinity of oxide semiconductors may be reduced due to the inclusion of impurities or the generation of defects. Therefore, CAAC-OS is similar to oxide semiconductors with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of an oxide semiconductor having a CAAC-OS are stable. Therefore, oxide semiconductors having CAAC-OS are heat-resistant and highly reliable. -OS is stable even under high temperatures (so-called thermal budget) during the manufacturing process Therefore, using CAAC-OS for OS transistors can increase the flexibility of the manufacturing process. This makes it possible to:

[0441] [nc-OS] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). In other words, nc-OS has a periodic atomic arrangement in the region of microscopic The size of the minute crystals is, for example, 1 nm or more and 10 nm or less. In particular, since the size of these tiny crystals is between 1 nm and 3 nm, they are also called nanocrystals. In nc-OS, there is no regularity in the crystal orientation between different nanocrystals. Therefore, depending on the analytical method, nc-OS may be considered as a-like OS. For example, in the case of an nc-OS film, XR When structural analysis is performed using the D instrument, out-of-plane θ / 2θ scans are used. In the XRD measurement, no peaks indicating crystallinity were detected. Electron diffraction (control) using an electron beam with a probe diameter larger than that of the silicon crystal (for example, 50 nm or more) When electron diffraction (also called limited-area electron diffraction) is performed, a diffraction pattern resembling a halo pattern is observed. On the other hand, for the nc-OS film, probes with sizes close to or smaller than the nanocrystals were Electron beam diffraction (nanobeam electron beam) using an electron beam with a diameter (for example, 1 nm to 30 nm) When the light is diffracted, multiple beams are generated within a ring-shaped area centered on the direct spot. An electron diffraction pattern may be obtained in which the spots are observed.

[0442] [a-like OS] The a-like OS is an oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0443] <<Oxide semiconductor structure>> Next, the details of the CAC-OS will be explained. Regarding.

[0444] [CAC-OS] CAC-OS is, for example, a metal oxide in which the elements constituting the metal oxide are 0.5 nm or more and 10 nm or less. Preferably, a material unevenly distributed in a size of 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide, and the The region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A state where the mixture is at or near this size is also called a mosaic or patch state.

[0445] Furthermore, CAC-OS is a mosaic structure in which the material is separated into a first region and a second region. The first region is in a cloud-like shape, and the first region is distributed throughout the film (hereinafter also referred to as a cloud-like shape). In other words, the CAC-OS is a mixture of the first and second regions. It is a composite metal oxide having the following structure.

[0446] Here, the ratio of In to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide is The atomic ratios of In, Ga, and Zn are expressed as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is In] is larger than [In] in the composition of the CAC-OS film. The region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region has a larger [In] than the second region. and [Ga] is smaller than [Ga] in the first region. In the second region, [Ga] is larger than [Ga] in the first region, and [In] is , which is a region smaller than [In] in the first region.

[0447] Specifically, the first region is mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region in which the gallium oxide, gallium zinc oxide, etc. In other words, the first region is called a region where In is the main component. The second region can be rephrased as a region containing Ga as the main component. This can be done.

[0448] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0449] In addition, CAC-OS in In-Ga-Zn oxide is a compound consisting of In, Ga, Zn, and O. In the material composition containing Ga, there is a region mainly composed of Ga and a region mainly composed of In. The regions are arranged in a mosaic pattern, and these regions are randomly distributed. Therefore, it is speculated that CAC-OS has a structure in which metal elements are distributed non-uniformly. .

[0450] CAC-OS can be formed by sputtering without heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, an insoluble gas is used as a deposition gas. Any one selected from the group consisting of an active gas (typically argon), oxygen gas, and nitrogen gas. In addition, the flow rate of oxygen gas relative to the total flow rate of film-forming gas during film formation may be The lower the ratio, the more preferable. For example, the ratio of the flow rate of oxygen gas to the total flow rate of film-forming gas during film formation is It is preferable to set the content to 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0451] For example, in the CAC-OS of In-Ga-Zn oxide, energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) The EDX mapping obtained using scopy revealed that the region containing In as the main component (first The structure is unevenly distributed and mixed with a region (first region) mainly composed of Ga. It can be confirmed that it has.

[0452] Here, the first region is a region having higher conductivity than the second region. When carriers flow through this region, the metal oxide exhibits electrical conductivity. The first region is distributed in a cloud-like manner in the metal oxide, resulting in high field-effect mobility (μ ) can be achieved.

[0453] On the other hand, the second region is a region having higher insulating properties than the first region. The regions are distributed in the metal oxide, thereby suppressing leakage current.

[0454] Therefore, when the CAC-OS is used in a transistor, the conductivity due to the first region and the conductivity due to the second region are different. The insulating properties of the second region act in a complementary manner to provide switching functionality. (On / Off function) can be given to CAC-OS. OS is a material that has a conductive function in part of the material and an insulating function in part of the material. The entire structure functions as a semiconductor. By separating the conductive function from the insulating function, Therefore, the CAC-OS can be used in transistor By using on ), high field-effect mobility (μ), and good switching A switching operation can be realized.

[0455] Furthermore, transistors using CAC-OS have high reliability. It is ideal for various semiconductor devices including display devices.

[0456] Oxide semiconductors have a variety of structures, each of which has different characteristics. Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA Two or more of C-OS, nc-OS, and CAAC-OS may be included.

[0457] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0458] By using the oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Furthermore, a highly reliable transistor can be realized.

[0459] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3 Less than or equal to 1×10 11 c m -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 In addition, when the carrier concentration of the oxide semiconductor film is reduced, the oxide semiconductor This can be achieved by lowering the impurity concentration in the conductor film and lowering the defect level density. A low impurity concentration and a low defect level density are called high purity intrinsic or substantially high purity intrinsic. Note that the oxide semiconductor having a low carrier concentration is a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. It may be called an oxide semiconductor.

[0460] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states. Therefore, the trap level density may also be low.

[0461] In addition, it takes a long time for the charges trapped in the trap levels of the oxide semiconductor to disappear. Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. There are cases where this happens.

[0462] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is In order to reduce the impurity concentration in the oxide semiconductor, It is also preferable to reduce the impurity concentration in the film in contact with the film. Potassium metal, alkaline earth metal, iron, nickel, silicon, etc.

[0463] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0464] When oxide semiconductors contain silicon or carbon, which are elements of Group 14, oxide Defect levels are formed in semiconductors. This causes defects in silicon and carbon in oxide semiconductors. The concentration of silicon and carbon near the interface with the oxide semiconductor (Secondary Ion Mass Spectroscopy ( SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 at oms / cm 3 The following applies.

[0465] In addition, when an oxide semiconductor contains an alkali metal or alkaline earth metal, defect levels are formed. Therefore, alkali metals or alkaline earth metals A transistor using an oxide semiconductor containing such a compound tends to be normally on. Therefore, alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS The concentration of 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0466] In addition, when nitrogen is contained in an oxide semiconductor, electrons that act as carriers are generated, and the carriers As a result, the concentration of nitrogen in the oxide semiconductor increases, making it easier to convert it into an n-type semiconductor. The transistor using the oxide semiconductor is likely to be normally on. If nitrogen is contained, trap levels may be formed. The electrical properties may become unstable. The nitrogen concentration is 5×10 19 atoms / cm 3 Less than 5 x 10 18 atom s / cm 3 Less than 1×10, more preferably 18 atoms / cm 3 The following is more preferably is 5 x 10 17 atoms / cm 3 Do the following:

[0467] In addition, hydrogen contained in oxide semiconductors reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the electrons acting as carriers are released. In addition, some of the hydrogen may combine with the oxygen that is bonded to the metal atom, forming a carrier. Therefore, it is necessary to use an oxide semiconductor containing hydrogen. Therefore, hydrogen in the oxide semiconductor It is preferable that the SIM is reduced as much as possible. The hydrogen concentration obtained by S is 1×10 20 atoms / cm 3 Less than 1x1 0 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than, More preferably, 1 × 10 18 atoms / cm 3 Make it less than.

[0468] To use an oxide semiconductor in which impurities are sufficiently reduced for a channel formation region of a transistor This allows stable electrical properties to be imparted.

[0469] This embodiment mode can be combined with other embodiment modes as appropriate.

[0470] (Fourth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 19 to 21. do.

[0471] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be applied to the display portion. has the function of detecting light, so it can be used for biometric authentication on the display and for detecting touch actions (contacts). This allows electronic devices to improve their functionality and convenience. It can be done.

[0472] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0473] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0474] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0475] The electronic device 6500 shown in FIG. 19A is a portable information device that can be used as a smartphone. It is a terminal device.

[0476] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0477] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0478] FIG. 19B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0479] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. A display panel 6511, an optical member 6512, a touch panel 6513, and a protective member 6510 are arranged in a space surrounded by the display panel 6511, the optical member 6512, and a touch panel 6513. The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. .

[0480] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The cable 6513 is fixed by an adhesive layer (not shown).

[0481] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. C6516 is mounted on the FPC6515. connected to a child.

[0482] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, extremely lightweight electronic devices can be realized. Because it is thin, it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. In addition, a part of the display panel 6511 is folded back and the FPC 6515 is attached to the back of the pixel area. By arranging the connection portion, an electronic device with a narrow frame can be realized.

[0483] By using the display device of one embodiment of the present invention for the display panel 6511, For example, a fingerprint can be captured on the display panel 6511 for fingerprint authentication. This can be done.

[0484] The display unit 6502 further includes a touch sensor panel 6513. 2 can be given a touch panel function. Capacitive, resistive, surface acoustic wave, infrared, optical, pressure-sensitive, etc. Alternatively, the display panel 6511 can function as a touch sensor. In that case, the touch sensor panel 6513 does not need to be provided.

[0485] An example of a television device is shown in FIG. 20A. The television device 7100 has a housing 7101. The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0486] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0487] The television device 7100 shown in FIG. 20A is operated by an operation switch provided on the housing 7101. Alternatively, it can be performed by a separate remote control device 7111. The television may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the device 7100. The remote control unit 7111 may have a display unit that displays information output from the The channel and volume can be controlled using the operation keys or touch panel. The image displayed on the display unit 7000 can be manipulated.

[0488] The television device 7100 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0489] FIG. 20B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721 3, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. are.

[0490] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0491] 20C and 20D show an example of digital signage.

[0492] The digital signage 7300 shown in FIG. 20C includes a housing 7301, a display unit 7000, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a switch, connection terminals, various sensors, a microphone, etc.

[0493] FIG. 20D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. do.

[0494] 20C and 20D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0495] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0496] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0497] Also, as shown in FIGS. 20C and 20D, the digital signage 7300 or the digital signage The Ineji 7400 is an information terminal device 7311 such as a smartphone owned by the user or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. By doing so, the display on the display unit 7000 can be switched.

[0498] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0499] The electronic device shown in FIGS. 21A to 21F includes a housing 9000, a display unit 9001, a speaker 900 3. Operation keys 9005 (including power switch or operation switch), connection terminal 9006 ,Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetic Air, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , including the ability to measure gradient, vibration, smell or infrared), microphone 900 8, etc.

[0500] The electronic devices shown in FIGS. 21A to 21F have various functions. Functions for displaying images, videos, text images, etc. on the display, touch panel function, calendar , function to display date or time, etc., processed by various software (programs) functions to control the computer, wireless communication functions, and reading programs or data recorded on recording media. The functions of electronic devices are not limited to these. The electronic device may have multiple display units. In addition, a camera or the like is installed in the electronic device to take still images or videos and store them on a recording medium (external or The camera may have a function to save the captured image to a camera (built into the camera), a function to display the captured image on the display, etc. stomach.

[0501] The electronic devices shown in FIGS. 21A to 21F will be described in detail below.

[0502] FIG. 21A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. 101 can display text and image information on its multiple sides. 9 shows an example of displaying an icon 9050. Also, information 9051 shown in a dashed rectangle is displayed. It may also be displayed on another surface of the display unit 9001. An example of the information 9051 is an e-mail. Notifications of incoming emails, SNS, phone calls, etc., the subject of emails and SNS, the sender name, the date and time, The time, remaining battery power, signal strength, etc. are displayed. An icon 9050 or the like may be displayed at the location.

[0503] 21B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a display The information display unit 9001 has a function to display information on three or more sides of the information display unit 9001. 053, information 9054 are displayed on different sides. For example, the user , with the mobile information terminal 9102 stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can, for example, receive a call. You can determine whether or not it is possible.

[0504] 21C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 communicates with a wireless headset, for example. The mobile information terminal 9200 also has a connection terminal 90 06 also allows data to be transmitted to and from other information terminals and for charging. The charging operation may be performed by wireless power supply.

[0505] 21D to 21F are perspective views showing a foldable mobile information terminal 9201. 21D shows the mobile information terminal 9201 in an unfolded state, FIG. 21F shows the mobile information terminal 9201 in a folded state, and FIG. 21E is a perspective view showing a state in the middle of changing from one of FIG. 21D and FIG. 21F to the other. The terminal 9201 is highly portable when folded and has a seamless, wide opening when unfolded. The display area provides excellent visibility of the display. , and is supported by three housings 9000 connected by hinges 9055. The indicator 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0506] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0507] B1: Subpixel, B2: Subpixel, C1: Capacitance, C2: Capacitance, L1: Shortest distance, L2: Shortest distance M1: transistor, M2: transistor, M3: transistor, M4: transistor M5: transistor, M6: transistor, M7: transistor, M8: transistor M9: transistor, M10: transistor, M11: transistor, M12: transistor Transistor, M13: Transistor, M14: Transistor, OUT1: Wiring, OUT2: Wiring, P11: Brightness value, P12: Brightness value, P13: Brightness value, P14: Brightness value, P15: Brightness P21: Brightness value, P22: Brightness value, P23: Brightness value, P24: Brightness value, P25: Brightness value degree value, PIX1: pixel circuit, PIX2: pixel circuit, PIX3: pixel circuit, V0: wiring, V 1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 100A: Display device, 1 00B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 1 10: light receiving device, 112: common layer, 114: common layer, 115: common electrode, 116: protection Protective layer, 121: luminescence, 121B: light, 121G: light, 121R: light, 122: light, 123 : light, 123a: stray light, 123b: stray light, 124: reflected light, 131: transistor, 13 2: transistor, 142: adhesive layer, 151: substrate, 152: substrate, 153: substrate, 15 4: substrate, 155: adhesive layer, 156: adhesive layer, 157: insulating layer, 158: light-shielding layer, 159 : Resin layer, 159p: Opening, 162: Display, 164: Circuit, 165: Wiring, 166: Conductor 167: conductive layer, 169: conductive layer, 172: FPC, 173: IC, 182: battery layer, 183: active layer, 184: buffer layer, 190: light-emitting device, 190B: light-emitting Device, 190G: Light-emitting device, 190R: Light-emitting device, 190R-PD: Light-emitting and receiving device Device, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: Buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer 194R: buffer layer; 200A: display device; 200B: display device; 201: substrate Plate, 202: finger, 203: layer having a light receiving device, 204: layer having a light receiving and emitting device 205: functional layer, 207: layer having a light-emitting device, 208: stylus, 209: substrate plate, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 214a: insulating Edge layer, 214b: insulating layer, 215: insulating layer, 216: partition wall, 219a: light-shielding layer, 219b : spacer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel formation region, 23 1n: low resistance region, 240: transistor, 241: transistor, 242: connection layer, 2 43: transistor, 244: connection portion, 245: transistor, 246: transistor, 247: transistor, 248: transistor, 249: transistor, 251: substrate, 252: transistor, 255: functional layer, 259: substrate, 261: contact portion, 262: fingerprint , 263: imaging range, 266: trajectory, 270B: light-emitting device, 270B1: light-emitting device 270B2: light emitting device, 270G: light emitting device, 270PD: light receiving device, 270R: light-emitting device, 270R-PD: light-receiving and light-emitting device, 271: pixel electrode, 272 :Optical adjustment layer, 272B: Optical adjustment layer, 272G: Optical adjustment layer, 272PD: Optical adjustment layer , 272R: Optical adjustment layer, 273: Active layer, 275: Common electrode, 277: Electrode, 278: Electrode, 280A: Display device, 280B: Display device, 280C: Display device, 280D: Display device, 280E: display device, 280F: display device, 280G: display device, 281: hole injection 282B1: hole transport layer; 282B2: hole transport layer; G: hole transport layer, 282PD: hole transport layer, 282R: hole transport layer, 283: light emitting layer, 2 83B: Light-emitting layer, 283B1: Light-emitting layer, 283B2: Light-emitting layer, 283G: Light-emitting layer, 283 R: light-emitting layer, 284: electron transport layer, 285: electron injection layer, 286a: unit, 286b : unit, 287: intermediate layer, 289: layer serving as both a light-emitting layer and an active layer, 290B: light-emitting device chair, 295: light receiving device, 300: pixel, 300a: pixel, 300b: pixel, 300 c: pixel, 305: light, 320: target pixel, 320a: target pixel, 320b: target pixel, 330: subpixel, 330a: pixel, 330b: pixel, 330c: pixel, 330d: pixel, 340: Finger, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power supply Button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printer board, 6518: battery, 7000: display unit, 7100: television device, 710 1: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook PC Nal computer, 7211: case, 7212: keyboard, 7213: pointing Device, 7214: External connection port, 7300: Digital signage, 7301: Housing ,7303: Speaker, 7311: Information terminal, 7400: Digital signage, 740 1: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9003: Speaker 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Micro Phone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 90 54: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal, 9 200: Portable information terminal, 9201: Portable information terminal

Claims

[Claim 1] a first pixel and a second pixel; the first pixel has a first sub-pixel and a second sub-pixel; the second pixel has a third subpixel; the first subpixel is a subpixel that emits light of a first color, the second subpixel has a function of receiving light emitted by the first subpixel; the third subpixel is a subpixel that emits light of a second color, the first color is blue or a color having a wavelength shorter than blue, the second color is blue; the wavelength of the first color light is shorter than the wavelength of the second color light; the first subpixel includes a first light-emitting device and a colored layer; the third subpixel includes a second light-emitting device; the third subpixel does not have the colored layer, the colored layer overlaps a light-emitting region of the first light-emitting device; The colored layer has a function of absorbing a portion of the light emitted by the first light-emitting device.

Images