Liquid crystal display device

Abstract

To control a gradient of an electric field applied between electrodes that drive a liquid crystal and apply an optimal electric field between the electrodes by increasing an interval between the electrodes.SOLUTION: A liquid crystal display device includes: a first electrode 101 formed over a substrate 100; an insulating film 102 formed on the substrate 100 and the first electrode 101; a semiconductor film 103 formed on the insulating film 102 and including a source, a channel region and a drain of a thin film transistor 121; a second electrode 112 that is an upper layer relative to the semiconductor film 103 and located above the first electrode 101, and includes first opening patterns 112a and 112b; and a liquid crystal 114 provided above the second electrode 112.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device and a liquid crystal display device. The present invention relates to a semiconductor device and a liquid crystal display device that control liquid crystal molecules. [Background technology]

[0002] One of the technological development policies for LCD devices is to widen the viewing angle. The technology to realize this is to generate an electric field roughly parallel to the substrate, which moves the liquid crystal molecules in a plane parallel to the substrate. This method controls the gradation by moving the LCD panel. -Plane switching) and FFS (Fringe-field switching) FFS has a second electrode (e.g., a For example, a pixel electrode where the voltage is controlled for each pixel is arranged, and a third electrode is arranged below the opening pattern. In some cases, a single electrode (for example, a common electrode to which a common voltage is supplied to all pixels) is arranged. An electric field is applied between the element electrode and the common electrode to control the liquid crystal. An electric field is applied to the liquid crystal molecules, and the electric field can be used to control the liquid crystal molecules. The liquid crystal molecules, which are oriented in a homogeneous direction, can be controlled in a direction parallel to the substrate. This results in a wider viewing angle.

[0003] The first electrode (common electrode) is formed directly on the glass substrate and is an inverted staggered type. The gate electrode of this transistor is also formed directly on the glass substrate. An insulating film that functions as a gate insulating film in an inverted staggered transistor is directly formed on the surface. The second electrode (pixel electrode) is formed on top of the first electrode. (See Patent Document 1).

[0004] Alternatively, the first electrode (common electrode) may be a gate insulator in an inverted staggered transistor. It is formed in direct contact with the insulating film that functions as a film. The electrode and drain electrodes also function as gate insulating films in an inverted staggered transistor. The insulating film is formed on the insulating film in direct contact with the insulating film. Then, a second electrode (pixel electrode) is formed on the first electrode in direct contact therewith (particularly (See Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-89255 Summary of the Invention [Problem to be solved by the invention]

[0006] In the above-mentioned conventional example, the electrodes that drive the liquid crystal are arranged with one insulating film in between. Therefore, there is a limit to how far the distance between the electrodes can be increased. If the thickness of the insulating film is increased, for example, the gate insulating film in a transistor also becomes thicker. This has the effect of reducing the current driving capacity of the transistor. Ta.

[0007] The spacing and width of the openings in the pixel electrodes are determined by the distance between the pixel electrodes and the common electrode. Therefore, the optimum value changes depending on the distance between the pixel electrode and the common electrode. If the distance cannot be freely set, the spacing and width of the openings in the pixel electrodes will be greatly limited. Therefore, the magnitude and direction of the electric field applied to the liquid crystal molecules are insufficient. It was a difficult situation.

[0008] The present invention has been made in consideration of the above circumstances, and its object is to provide a display element having a This allows for greater freedom in the spacing between the two electrodes, making it possible to apply an optimal electric field between the electrodes. The present invention aims to provide a display device and a manufacturing method thereof. [Means for solving the problem]

[0009] In order to solve the above problems, the semiconductor device according to the present invention includes a first insulating film formed above a substrate. an electrode, a first insulating film formed above the first electrode, and a second insulating film formed above the first insulating film; a semiconductor film formed on the semiconductor film, a second insulating film formed on the semiconductor film, and a second insulating film formed on the second insulating film. a conductive film formed on the insulating film; a third insulating film formed on the conductive film; and a second electrode having an opening.

[0010] The liquid crystal display device according to the present invention comprises a first electrode formed above a substrate, and a second electrode formed above the first electrode. a first insulating film formed on the semiconductor film; a semiconductor film formed on the first insulating film; a second insulating film formed above the conductive film; a conductive film formed above the second insulating film; a third insulating film formed above the insulating film; and a second insulating film formed above the third insulating film and having an opening. The liquid crystal display device includes a first electrode and a liquid crystal disposed above a second electrode.

[0011] According to the semiconductor device and the liquid crystal display device, the first electrode is formed on the substrate, i.e., on the semiconductor film. The second electrode is formed and disposed under the conductive film (for example, a transistor). The gate electrode or source electrode of the transistor, etc.) and the third insulating film are located above the Therefore, the distance between the first electrode and the second electrode can be increased compared to the conventional case. The thickness of the insulating film does not have much effect on other elements such as transistors, even if the thickness is changed. Therefore, the thickness can be arbitrarily changed, and as a result, the first electrode and the second electrode The distance between the electrodes can be freely set. Therefore, the distance between the first electrode and the second electrode can be freely set. This increases the degree of freedom, and makes it possible to control the gradient of the electric field applied between the electrodes. This makes it easy to increase the electric field in the direction parallel to the substrate, for example. In a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called homogeneous Since the orientation of the liquid crystal can be controlled in a direction parallel to the substrate, the field of view can be controlled by applying an optimal electric field. The corners become wider.

[0012] The opening generates an electric field between the first electrode and the second electrode in a direction approximately parallel to the substrate. Therefore, it is possible to generate an electric field in a direction approximately parallel to the substrate. If possible, it can take a variety of shapes.

[0013] Therefore, the opening is not limited to a closed opening such as a slit, but may be, for example, a comb-shaped electrode. The conductive patterns are located between each other, such as the spaces between the comb teeth of the conductive patterns. This includes the space where no pattern is formed, i.e., the space between the electrodes. , as long as there is a gap or space between them. The same applies below.

[0014] Another semiconductor device according to the present invention includes a first electrode formed above a substrate, and a first electrode a first insulating film formed above, a semiconductor film formed above the first insulating film, and a semiconductor a conductive film formed above the film; a second insulating film formed above the conductive film; and a second insulating film. and a second electrode formed above the membrane and having an opening.

[0015] According to the semiconductor device and the liquid crystal display device, the first electrode is disposed on the substrate, i.e., on the front side. The second electrode is formed and disposed under the semiconductor film. is located above the insulating film and the source electrode, The distance between the first electrode and the second electrode can be increased. Even if the thickness is changed, it does not have much effect on other elements such as transistors. can be arbitrarily changed, and as a result, the distance between the first electrode and the second electrode can be freely adjusted. Therefore, the degree of freedom in determining the distance between the first electrode and the second electrode is improved. This makes it possible to control the gradient of the electric field applied between the electrodes, and for example, It is easy to increase the electric field parallel to the plate. In display devices, liquid crystal molecules are aligned parallel to the substrate (so-called homogeneous alignment). can be controlled in a direction parallel to the substrate, and by applying an optimal electric field, the viewing angle can be widened. .

[0016] Another semiconductor device according to the present invention includes a first electrode formed above a substrate, and a first electrode A first insulating film formed above, a conductive film formed above the first insulating film, and a conductive film A semiconductor film formed above, a second insulating film formed above the semiconductor film, and a second insulating film and a second electrode formed above the membrane and having an opening.

[0017] According to the semiconductor device and the liquid crystal display device, the first electrode is disposed on the substrate, i.e., on the front side. The gate electrode is formed and disposed below the semiconductor film and below the conductive film (for example, the gate electrode). In addition, since the second electrode is disposed above the second insulating film, compared to the conventional method, The distance between the first electrode and the second electrode can be increased. The thickness does not significantly affect other elements such as transistors, even if the thickness is changed. Therefore, the thickness can be arbitrarily changed, and as a result, the distance between the first electrode and the second electrode can be Therefore, the distance between the first electrode and the second electrode can be freely set. This improves the accuracy of the measurement. It also makes it possible to control the gradient of the electric field applied between the electrodes. For example, it is easy to increase the electric field parallel to the substrate. In a display device using a liquid crystal display, the liquid crystal molecules are aligned parallel to the substrate (so-called homogeneous The viewing angle can be adjusted by applying an optimal electric field. It becomes wider.

[0018] Another semiconductor device according to the present invention has the above-mentioned configuration, wherein the first electrode is a common electrode, and the second electrode is a common electrode. The second electrode is a pixel electrode.

[0019] Another semiconductor device according to the present invention has the above-mentioned configuration, wherein the first electrode is a pixel electrode, and the second electrode is a pixel electrode. The second electrode is a common electrode.

[0020] Another liquid crystal display device according to the present invention includes a first electrode formed above a substrate, and a first electrode a first insulating film formed above the semiconductor film; a semiconductor film formed above the first insulating film; a conductive film formed above the conductive film; a second insulating film formed above the conductive film; a second electrode formed above the insulating film and having an opening; and a liquid crystal layer disposed above the second electrode. It is equipped with the following.

[0021] Another liquid crystal display device according to the present invention includes a first electrode formed above a substrate, and a second electrode of the first electrode. A first insulating film formed above, a conductive film formed above the first insulating film, and a conductive film A semiconductor film formed above, a second insulating film formed above the semiconductor film, and a second insulating film a second electrode formed above the film and having an opening; and a liquid crystal disposed above the second electrode. It is equipped with:

[0022] Another liquid crystal display device according to the present invention has the above-mentioned configuration, wherein a first electrode and a second electrode are disposed between the first electrode and the second electrode. The liquid crystal is controlled by an electric field.

[0023] Another liquid crystal display device according to the present invention has the above-mentioned configuration, wherein the first electrode is a common electrode and the second electrode is a common electrode. The second electrode is a pixel electrode.

[0024] Another liquid crystal display device according to the present invention has the above-mentioned configuration, wherein the first electrode is a pixel electrode, and the second electrode is a pixel electrode. The second electrode is a common electrode.

[0025] The switch according to the present invention can be of various types. For example, There are electrical switches and mechanical switches, that is, switches that can control the flow of current. If there is a transistor, it is not limited to a specific one and various types can be used. It can be a diode (PN diode, PIN diode, Schottky diode) A logic circuit that combines these elements can be used. Therefore, when a transistor is used as a switch, the transistor may be a single Since the transistor operates as a switch, the polarity (conductivity type) of the transistor is not particularly limited. However, if a low off-state current is desired, a transistor with a polarity that reduces the off-state current should be used. It is desirable to use a transistor with a low off-state current by providing an LDD region. Some have a multi-gate structure, while others operate as switches. The potential of the transistor's source terminal is close to the low-potential power supply (Vss, GND, 0V, etc.) If the source terminal voltage is higher than the high-potential power supply (V When operating in a state close to the P-channel type, it is preferable to use a P-channel type. This is because the absolute value of the gate-source voltage can be increased, making it easier to operate as a switch. It should be noted that both N-channel and P-channel types are used to make a CMOS switch. If a CMOS switch is used, the voltage output through the switch (i.e., the input voltage) When the voltage is higher or lower than the output voltage, The switch of the present invention can also operate appropriately. These include TFTs that control pixel electrodes and switching elements used in the drive circuit section. In other areas, if it is necessary to control the flow of current, a switch can be used. It is possible.

[0026] In the present invention, "connected" refers to both electrical connection and direct connection. Therefore, in the configuration disclosed in the present invention, a predetermined In addition to the connection relationship between the two, other elements (such as switches and transistors) that allow electrical connections between them are also included. transistors, capacitance elements, inductors, resistance elements, diodes, etc.) may be arranged. Alternatively, they may be arranged without any other elements between them. When the membrane is not electrically connected without other elements that allow electrical connection between them shall be described as directly connected or directly connected. When describing something as being electrically connected, it is meant to be used in conjunction with the case where the item is electrically connected. This includes cases where the equipment is directly connected to the power supply.

[0027] The display element, the display device, and the light-emitting device of the present invention can be applied to various forms. In addition, various elements can be used. In the present invention, a liquid crystal element can be used. A liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. It is composed of a pair of electrodes and liquid crystal. LCDs include ray, transmissive LCDs, semi-transmissive LCDs, and reflective LCDs. For example, EL elements (EL elements are elements that emit luminescence when an electric field is applied) It also refers to an element having an emitting layer from which light can be obtained. (including organic and inorganic EL elements), electron emission elements, electronic ink, gratings Light valves (GLV), plasma displays (PDP), digital micromirror displays DMD, piezoelectric ceramic display, carbon nanotube, etc. It is possible to provide a display medium whose contrast changes due to an electrochemical effect. As a display device using electron-emitting devices, an EL display is used. Field emission displays (FED) and SED flat panel displays (SE D:Surface-conduction Electron-emitter Di There are also electronic paper displays that use electronic ink. .

[0028] In the present invention, various types of transistors may be used. Therefore, there is no limitation on the type of transistor that can be applied. Thin-film transistors (TF) using non-single-crystal semiconductor films, such as silicon and polycrystalline silicon. T), transistors formed using semiconductor substrates or SOI substrates, MOS transistors , junction transistors, bipolar transistors, ZnO, a-InGaZnO and other chemical Transistors using compound semiconductors, transistors using organic semiconductors and carbon nanotubes In addition, the transistors are arranged in a The type of substrate used can be various and is not limited to a specific one. Therefore, for example, glass substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, etc. In addition, when a reflective display is used, a single crystal substrate, S An OI substrate can also be used. Also, a transistor can be formed on one substrate, and then a The substrate may be moved to place the transistor on another substrate.

[0029] As already mentioned, various types of transistors can be used in the present invention. Therefore, all of the circuits can be formed on glass substrates. It may be formed on a substrate or a plastic substrate. If the product is a reflective display, it may be formed on a single crystal substrate. It may be formed on an OI substrate, that is, it may be formed on any substrate. All circuits are formed on the same board, reducing the number of components and lowering costs. This can improve reliability by reducing the number of connections to circuit components. In this case, part of the circuit is formed on one substrate and another part of the circuit is formed on another substrate. That is, not all of the circuits need to be formed on the same substrate. For example, One part of the circuit is formed using transistors on a glass substrate, and another part of the circuit is formed using a single crystal The IC chip is formed on a substrate and connected to the glass using COG (Chip On Glass). Alternatively, the IC chip may be mounted on a TAB (Tape Automated Bonding) It may be connected to the glass substrate using a printed circuit board or fused bonding. As shown above, part of the circuit is formed on the same board, reducing the number of components and costs. This reduces the number of connections to the circuit components, thereby improving reliability. In addition, areas with high drive voltages or high drive frequencies consume a lot of power. Therefore, if such parts are not formed on the same board, it is possible to prevent an increase in power consumption. can.

[0030] The structure of the transistor can take various forms and is not limited to a specific structure. For example, a multi-gate structure in which the number of gate electrodes is two or more may be used. By using a multi-gate structure, it is possible to reduce the off-state current and increase the breakdown voltage of the transistor. This improves reliability by improving the drain-source voltage when operating in the saturation region. Even if the voltage changes, the drain-source current does not change much, and the characteristics are flat. Also, a structure in which gate electrodes are arranged above and below the channel is possible. By using a structure in which gate electrodes are placed above and below the Increasing the current value and making it easier for a depletion layer to form make it possible to reduce the S value. Alternatively, a structure in which a gate electrode is disposed above the channel may be used, and a structure in which a gate electrode is disposed below the channel may be used. The gate electrode may be disposed in a staggered structure. Furthermore, the channel region may be divided into a plurality of regions, which are connected in parallel. The channels (or parts thereof) may be connected in series. The source electrode and drain electrode may overlap the channel (or part of it). By using a structure in which the source electrode and drain electrode overlap, charges accumulate in part of the channel. This can prevent the operation from becoming unstable. Also, the LDD area may be included. By providing a DD region, the off-current can be reduced and the breakdown voltage of the transistor can be improved. This improves reliability and reduces the drain-source voltage fluctuation when operating in the saturation region. Even if the drain-source current is changed, it does not change much, and the characteristics are flat. .

[0031] In the present invention, one pixel refers to one element whose brightness can be controlled. Therefore, as an example, one pixel refers to one color element, and one color element Therefore, the brightness is expressed as R (red), G (green), and B (blue). In the case of a color display device, the smallest unit of an image is a triplet of R, G, and B pixels. The number of color elements is not limited to three, and may be more than three. For example, RGBW (W is white) or RGB plus yellow, cyan, and magenta. Another example is the brightness calculation using multiple regions for one color element. When controlling the area, one pixel is used for the area. When this is done, there are multiple areas for controlling brightness for each color element, and the gradation is displayed across all of them. The area for controlling the brightness is one pixel. In this case, one color element is composed of multiple pixels. The size of the area that contributes to the display may differ depending on the color element. In multiple brightness control areas, that is, multiple pixels that make up one color element In this case, the signals supplied to each are made slightly different to widen the viewing angle. When describing one pixel (three colors), it means that one pixel is composed of three pixels of R, G, and B. When describing one pixel (one color), it means that multiple pixels are used for one color element. When there are several pixels, they are considered as one pixel.

[0032] In the present invention, the pixels may be arranged (distributed) in a matrix. Here, the pixels are arranged (arranged) in a matrix, which means that vertical and horizontal stripes are combined. This includes cases where the colors are arranged in stripes in a grid pattern. When displaying full color using a pixel (for example, RGB), the dots of the three color elements are called digital dots. This also includes the case where the image is arranged in a Bayer format. The color elements are not limited to three colors, and may be more than three. For example, RGBW (W There are also colors that add yellow, cyan, and magenta to RGB. The size of the light emitting area may differ for each element.

[0033] A transistor is a semiconductor having at least three elements, each of which includes a gate, a drain, and a source. The element has a drain region, a source region, and a channel region between the drain region and the source region. The source and drain of a transistor vary depending on the structure and operating conditions of the transistor. Therefore, it is difficult to determine which is the source and which is the drain. In the present invention, the regions functioning as the source and drain are referred to as the first terminal and the second terminal, respectively. It is written as two terminals.

[0034] The gate is a gate electrode and a gate wiring (also called a gate line or a gate signal line). The gate electrode is the entire structure including the channel region. semiconductors that form regions such as the gate and drain regions, and LDD (Lightly Doped Drain) regions. This refers to the conductive film that overlaps with the gate insulating film. is used to connect the gate electrodes of each pixel and to connect the gate electrodes to other wiring. This refers to the wiring.

[0035] However, there are also parts that function as gate electrodes and gate wiring. Such a region may be called a gate electrode or a gate wiring. Therefore, there are also areas where the gate electrode and the gate wiring cannot be clearly distinguished. When a channel region overlaps with an extended gate wiring, The region functions as a gate wiring and also as a gate electrode. Therefore, such a region may be called a gate electrode or a gate wiring.

[0036] In addition, the region formed of the same material as the gate electrode and electrically connected to the gate electrode is also Similarly, it is made of the same material as the gate wiring and is electrically connected to the gate wiring. The area electrically connected to the gate wiring may also be called the gate wiring. In this case, there is a function that does not overlap with the channel region or connects to another gate electrode. However, it may be possible to reduce manufacturing costs and processes, or to improve layout. For reasons such as simplifying the design, the gate electrode and gate wiring are made of the same material. There are areas that are electrically connected to the gate wiring. This may also be called gate wiring.

[0037] For example, in a multi-gate transistor, the gate voltage of one transistor The electrode of the other transistor and the gate electrode of the other transistor are made of a conductive film made of the same material as the gate electrode. Such a region is often used to connect gate electrodes. Since it is an area of ​​1, it can be called gate wiring, but Since it can be considered as a transistor, it can also be called a gate electrode. It is made of the same material as the gate electrode and gate wiring, and is electrically connected to them. The gate electrode and the gate wiring may be called gate electrodes or gate wirings. The conductive film that connects the line can also be called the gate electrode or gate wiring. is also good.

[0038] The gate terminal is a region of the gate electrode or a region electrically connected to the gate electrode. It refers to a part of an area.

[0039] The source is a combination of a source region, a source electrode, and a source wiring (source line or source signal The source region refers to the whole or part of the source area. , contains a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic) It refers to a semiconductor region. Therefore, it is a region that contains a small amount of P-type impurities or N-type impurities. The so-called LDD (Lightly Doped Drain) region is not included in the source region. The source electrode is made of a material different from the source region and is electrically isolated from the source region. The source electrode is the conductive layer in the source region. The source wiring is the wiring that connects the source electrodes of each pixel. This refers to wiring for connecting a source electrode to another wiring or for connecting a source electrode to another wiring.

[0040] However, there are also parts that function as source electrodes and source wiring. Such a region may be called a source electrode or a source wiring. In other words, there are areas where the source electrode and the source wiring cannot be clearly distinguished. For example, if there is a source region overlapping with an extended source wiring, This region functions as a source wiring, but also as a source electrode. Therefore, such a region may be called a source electrode or a source wiring. stomach.

[0041] In addition, a region formed of the same material as the source electrode and electrically connected to the source electrode, The part connecting the source electrodes may also be called the source electrode. The part that overlaps with the source wiring may also be called the source electrode. The area formed of the same material as the source wiring and electrically connected to the source wiring is also called the source wiring. In the strict sense, such a region does not have the function of connecting to another source electrode. However, there are cases where this is not possible due to factors such as reducing manufacturing costs and processes, or simplifying the layout. It is formed of the same material as the source electrode and source wiring, and is electrically connected to the source electrode and source wiring. Therefore, such areas are also called source electrodes or source wiring. is also good.

[0042] In addition, for example, the conductive film in the portion connecting the source electrode and the source wiring is also It may be called a source wiring.

[0043] The source terminal is a region of the source electrode or a region electrically connected to the source electrode. It refers to a part of an area.

[0044] The drain includes the drain region, drain electrode, and drain wiring. The term "source" is used in this specification in the same way as "drain terminal." Even if it is connected, it is used in the same way as the source terminal.

[0045] In the present invention, a semiconductor device refers to a semiconductor element (such as a transistor or a diode). Also, any device that can function by utilizing the characteristics of semiconductors. The display device may be a device having a display element (such as a liquid crystal element or a light emitting element). It should be noted that a plurality of pixels including display elements such as liquid crystal elements and EL elements and the like are formed on a substrate. It may also refer to a display panel body on which a peripheral driving circuit for driving the pixels is formed. Flexible printed circuits (FPC) and printed wiring boards (PWB) are used for display panels. The light-emitting device may also include a device attached to an EL element or an FED. A liquid crystal display device is a display device that has a self-luminous display element such as an element that uses a liquid crystal display. It refers to a display device that has a liquid crystal element.

[0046] In the present invention, the term "a material formed on a certain object" refers to a material formed on a certain object. Regarding the description of "on something" or "on top of something," It is not limited to being directly on top of something. It is not limited to being directly on top of something. This also includes cases where another material is sandwiched between layers. For example, if there is a layer on top of layer A (or When we say that layer B is formed on layer A, it means that layer B is formed directly on top of layer A. In some cases, layer A is formed directly on top of another layer (such as layer C or layer D). This also includes the case where layer B is formed on the surface of the material in direct contact with the material. The same applies to the description "above," which is limited to being directly on top of something. This also includes cases where there is something else sandwiched between them. For example, above layer A, When we say that layer B is formed, it means that layer B is formed directly on top of layer A. And another layer (such as layer C or layer D) is formed directly on top of layer A, and on top of that This also includes cases where layer B is formed in direct contact with the material. The same applies to the case of something being below it, and there are cases where it is directly in contact with something and cases where it is not in contact with something. In addition, when it is written "above" something, it means that the electrode is The substrate on which the electrodes are formed is taken as the reference, and the side on which the electrodes are formed is taken as the upper side. [Effects of the Invention]

[0047] According to the present invention, the distance between the first electrode and the second electrode can be increased and other elements can be used. Since the spacing can be controlled without affecting the children, the degree of freedom in spacing is improved. As a result, the spacing and width of the openings in the pixel electrodes depend on the distance between the pixel electrodes and the common electrode. Therefore, the optimum value will change, and the size, width and spacing of the openings can be freely set. This makes it possible to control the gradient of the electric field applied between the electrodes, and for example, It is easy to increase the electric field parallel to the plate. In the device, the liquid crystal molecules aligned parallel to the substrate (so-called homogeneous alignment) are Since it can be controlled in a direction parallel to the substrate, the viewing angle can be widened by applying an optimal electric field. [Brief explanation of the drawings]

[0048] [Figure 1] 10A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a second embodiment, and FIG. 10B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 2] 10A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a second embodiment, and FIG. 10B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 3] 10A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a third embodiment, and FIG. 10B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 4]10A is a plan view for explaining the configuration of an IPS-type liquid crystal display device according to a fourth embodiment, and FIG. 10B is an AB cross-sectional view and a CD cross-sectional view of FIG. [Figure 5] 10A is a plan view for explaining the configuration of an IPS-type liquid crystal display device according to a fifth embodiment, and FIG. 10B is an AB cross-sectional view and a CD cross-sectional view of FIG. [Figure 6] 10A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a sixth embodiment, and FIG. 10B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 7] 13A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a seventh embodiment, and FIG. 13B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 8] 13A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to an eighth embodiment, and FIG. 13B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 9] 13A is a plan view illustrating the configuration of an FFS-type liquid crystal display device according to a ninth embodiment, and FIG. 13B is an EF cross-sectional view and a GH cross-sectional view of FIG. [Figure 10] 13A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a tenth embodiment, and FIG. 13B is an EF cross-sectional view and a GH cross-sectional view of FIG. [Figure 11] 11A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to the eleventh embodiment, and FIG. 11B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 12] 12A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a twelfth embodiment, and FIG. 12B is an EF cross-sectional view and a GH cross-sectional view of FIG. [Figure 13] 13A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to the thirteenth embodiment, and FIG. 13B is an EF cross-sectional view and a GH cross-sectional view of FIG. [Figure 14] 14A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to a fourteenth embodiment, and FIG. 14B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 15]15A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to the fifteenth embodiment, and FIG. 15B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 16] 16A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to the sixteenth embodiment, and FIG. 16B is a cross-sectional view taken along lines EF and GH of FIG. [Figure 17] 17A is a plan view illustrating the configuration of an FFS-mode liquid crystal display device according to the seventeenth embodiment, and FIG. 17B is a cross-sectional view taken along lines EF, GH, and IJ of FIG. [Figure 18] 18(A) is a plan view for explaining the configuration of an FFS-mode liquid crystal display device according to the 18th embodiment, and FIG. 18(B) is an EF cross-sectional view and a GH cross-sectional view of FIG. [Figure 19] 20A is a plan view illustrating the configuration of an FFS-type liquid crystal display device according to the 19th embodiment, and FIG. 20B is a KL cross-sectional view and an IJ cross-sectional view of FIG. 20A. [Figure 20] 20(A) is a plan view for explaining the configuration of an FFS-mode liquid crystal display device according to the twentieth embodiment, and FIG. 20(B) is an MN cross-sectional view and an OP cross-sectional view of FIG. 20(A). [Figure 21] (A) is a cross-sectional view for explaining the configuration of an FFS-type liquid crystal display device according to the 21st embodiment, and (B) is a cross-sectional view for explaining the configuration of an FFS-type liquid crystal display device according to the 22nd embodiment. [Figure 22] FIG. 23 is a cross-sectional view illustrating the configuration of an FFS-type liquid crystal display device according to the 23rd embodiment. [Figure 23] FIG. 24 is a cross-sectional view illustrating the configuration of a liquid crystal display device according to a 24th embodiment. [Figure 24] 24(A) is a plan view of the liquid crystal display device shown in FIG. 23, and FIG. 24(B) is an enlarged view of the pixel portion of FIG. 24(A). [Figure 25] 25A is a plan view of a liquid crystal display device according to a 25th embodiment, and FIG. 25B is an enlarged view of a pixel portion of FIG. [Figure 26] FIG. 26 is a cross-sectional view illustrating the configuration of a liquid crystal display device according to a 26th embodiment. [Figure 27]FIG. 27 is a plan view illustrating the shape of an electrode of an FFS-mode liquid crystal display device according to the 27th embodiment. [Figure 28] FIG. 28 is a plan view illustrating the shape of an electrode of an IPS liquid crystal display device according to the 28th embodiment. [Figure 29] FIG. 29 is a circuit diagram for explaining the circuit configuration of a liquid crystal display device according to a 29th embodiment. [Figure 30] FIG. 30 is a circuit diagram for explaining the circuit configuration of a liquid crystal display device according to a 30th embodiment. [Figure 31] 31(A) to 31(E) are cross-sectional views showing a method for manufacturing a liquid crystal module according to a thirty-first embodiment. [Figure 32] 31(A) to 31(D) are cross-sectional views showing a method for manufacturing a liquid crystal module according to a thirty-first embodiment. [Figure 33] 3A is a plan view of a liquid crystal module according to a thirty-first embodiment, and FIG. 3B is a KL cross-sectional view of FIG. [Figure 34] FIG. 32 is a diagram for explaining a liquid crystal display module according to the thirty-second embodiment. [Figure 35] FIG. 32 is a diagram for explaining a liquid crystal display module according to the thirty-second embodiment. [Figure 36] 33(A) to 33(H) are perspective views showing an electronic device according to a thirty-third embodiment. [Figure 37] 1 is a cross-sectional view illustrating a basic configuration of a first embodiment of the present invention. [Figure 38] 34(A) and 34(B) are cross-sectional views illustrating the configuration of a light-emitting device according to a thirty-fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0049] Hereinafter, embodiments of the present invention will be described with reference to the drawings. and the present invention may be practiced in various different ways without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications can be made to the modes and details of the present invention. Therefore, it should not be construed as being limited to the description of this embodiment mode.

[0050] (First embodiment) FIG. 37 is a cross-sectional view for explaining the basic configuration of the present invention. The substrate 3700 is a glass substrate, a quartz substrate, an aluminum substrate, or the like. The substrate is made of insulating materials such as mina, and the plastic has heat resistance that can withstand the processing temperatures of the post-processing. The substrate is a black substrate, a silicon substrate, or a metal substrate. In this case, it is desirable that the substrate 3700 be optically transparent.

[0051] The first electrode 3701 is a conductive film (for example, ITO: indium stannate) that transmits visible light. It is formed using a compound (a compound of methyl methacrylate).

[0052] An insulating film 3704 is formed on the substrate 3700 and the first electrode 3701. 3704 is, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), oxynitride silicon Ricon (SiO x N y :x>y), silicon oxynitride (SiN x O y :x>y), etc. It is made of an insulating material containing silicon or nitrogen, and has a single layer structure of either of these films. Alternatively, a laminated structure in which a plurality of these films are laminated may be used. This prevents impurities from diffusing from the substrate 3700 to the upper layer of the insulating film 3704. can.

[0053] Between the substrate 3700 and the insulating film 3704, there are further provided a gate electrode, a gate wiring, A gate insulating film and the like may be disposed. The wiring may be formed in the same process as the first electrode 3701 .

[0054] A thin film transistor 3703 is formed on the insulating film 3704. The thin film transistor 3703 may be either a top gate type or a bottom gate type. The electrode 3703 is disposed near the first electrode 3701 and the second electrode 3702 .

[0055] An interlayer insulating film 3705 is formed on the thin film transistor 3703 and the insulating film 3704. The interlayer insulating film 3705 may be a single layer or may have a multi-layer structure.

[0056] The interlayer insulating film 3705 can be made of an inorganic material or an organic material. Organic materials include polyimide, acrylic, polyamide, polyimideamide, resist, Siloxane or polysilazane can be used. As the inorganic material, silicon oxide can be used. Kon(SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y :x> y), silicon oxynitride (SiN x O y :x>y) and other insulating materials containing oxygen or nitrogen Alternatively, a laminated film in which a plurality of these films are laminated may be used. A laminated film may be formed by combining organic and inorganic materials.

[0057] When an inorganic material is used for the interlayer insulating film 3705, it is possible to prevent the penetration of moisture and impurities. In particular, using a layer containing nitrogen has a high ability to block moisture and impurities. When an organic material is used for the interlayer insulating film 3705, the surface can be made flat. Therefore, it can have a positive effect on the layer above it. For example, The layer that is formed can also be made flat, which prevents the alignment of the liquid crystal from becoming distorted. This prevents wiring from being cut and allows the resist to be formed accurately. do.

[0058] A second electrode 3702 is formed on the interlayer insulating film 3705. For 02, it is desirable to use a material with high optical transparency. For example, indium (In), tin (Sn), one or more elements selected from the group consisting of (I), (II), (III), (IV), (IV), (V), (VI), (VII ... Compounds and alloy materials containing one or more elements (e.g., indium tin oxide (I TO), indium zinc oxide (IZO), indium tin oxide doped with silicon oxide (I TSO) is preferable. In particular, IZO is easy to process and can be formed into precise and fine shapes. However, the present invention is not limited to this.

[0059] Either the first electrode 3701 or the second electrode 3702 is a pixel electrode in response to a video signal. Each pixel functions as a pixel electrode, to which a different signal is supplied. The first electrode 370 is electrically connected to the source or drain of the transistor 3703. The remaining one of the first and second electrodes 3702 functions as a common electrode.

[0060] An opening pattern (slit) is formed in the second electrode 3702. The line is formed by applying a current between a first electrode 3701 and a second electrode 3702 in a direction approximately parallel to the substrate. It is possible to generate an electric field including a direction roughly parallel to the substrate. If possible, the aperture pattern can have various shapes. This refers to the case where the display is parallel, with some deviation. For example, the deviation may be ±10 degrees, more preferably ±5 degrees. This includes cases where there is a deviation.

[0061] Therefore, the opening pattern includes not only closed opening patterns such as slits, but also For example, the spacing between the teeth of a comb-shaped electrode may be a problem. This includes spaces between the conductive patterns where the conductive patterns are not formed. In other words, it is sufficient that there is a gap or space between the electrodes.

[0062] In this way, an electric field is generated between the second electrode 3702 and the first electrode 3701, and the liquid crystal The molecular orientation can be controlled.

[0063] As described above, in this embodiment, between the first electrode 3701 and the thin film transistor 3703 The insulating film 3704 is located on the substrate 3701. Therefore, by adjusting the thickness of the insulating film 3704, This improves the degree of freedom in determining the distance between the first electrode 3701 and the second electrode 3702. The spacing and width of the opening patterns of the electrodes are determined by the distance between the pixel electrode and the common electrode. The optimum value changes depending on the distance, so you can freely adjust the size, width and spacing of the opening pattern. The gradient of the electric field applied between the electrodes can be controlled. This makes it easy to increase the electric field in the direction parallel to the substrate. In a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called polarized light) Since the uniform orientation of the liquid crystal can be controlled in a direction parallel to the substrate, applying an optimal electric field The viewing angle becomes wider.

[0064] In addition, even if the thickness of the insulating film 3704 is changed, the operation of the transistor is not affected. Therefore, the thickness can be freely controlled. The gap can be freely widened.

[0065] In FIG. 37, only the second electrode 3702 has an opening pattern. The first electrode 3701 may also have an opening pattern, which allows the electric field to be approximately parallel to the substrate. It is possible to generate and control liquid crystal molecules.

[0066] Furthermore, the presence of the first electrode 3701 reduces the amount of light transmitted unless the transmittance is 100%. On the other hand, if the first electrode 3701 has an opening pattern, the opening pattern The light does not attenuate in the area, so the overall amount of light transmitted increases. As a result, brightness is improved. This can reduce power consumption and improve the overall efficiency.

[0067] (Second embodiment) FIG. 1A is a plan view illustrating the configuration of a liquid crystal display device according to a second embodiment of the present invention. This figure shows one pixel. This liquid crystal display uses the FFS method to align the liquid crystal. In FIG. 1A, a plurality of source wirings 108 are arranged parallel to each other. The gate wirings 10 extend in the vertical direction in the drawing and are arranged at a distance from each other. 5 extend in a direction (horizontal direction in the drawing) substantially perpendicular to the source wiring 108 and are spaced apart from each other. The auxiliary wiring 106 is arranged so as to be adjacent to each of the plurality of gate wirings 105. The gate line 105 is disposed in a direction substantially parallel to the source line 108. The source wiring 108 and the auxiliary wiring 109 extend in a direction substantially perpendicular to the source wiring 108 (the left-right direction in the drawing). A substantially rectangular space is enclosed by the gate wiring 106 and the gate wiring 105, and a liquid crystal display device is mounted in this space. The thin film transistor 121 that drives the pixel electrode is shown on the left side of the figure. The pixel electrodes and thin film transistors are arranged in a matrix. It is being done.

[0068] The gate wiring 105, auxiliary wiring 106, and source wiring 108 are made of aluminum ( Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W) , neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au) , silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt ( Co), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B) , arsenic (As), gallium (Ga), indium (In), tin (Sn), oxygen (O) One or more elements selected from the group consisting of Compounds and alloy materials consisting of multiple elements (e.g., indium tin oxide (ITO), Indium zinc oxide (IZO), indium tin oxide doped with silicon oxide (ITSO), Zinc oxide (ZnO), aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag) etc.), or a substance that is a combination of these compounds. The compounds of these with silicon (silicides) (e.g., aluminum silicon, molybdenum silicon) Nitrogen compounds (e.g., titanium nitride, silicon silicide, nickel silicide, etc.) and their compounds with nitrogen (e.g., titanium nitride, It is formed by using silicon (Si) containing n It may contain a large amount of p-type impurities (such as phosphorus) or p-type impurities (such as boron). By including pure materials, the conductivity is improved and the material behaves like a normal conductor, making it suitable for wiring. Silicon can be either single crystal or polycrystalline (polysilicon). It can be either single crystal silicon or polycrystalline silicon. By using crystalline silicon, the resistance can be reduced. By doing so, it can be made in a simple manufacturing process. Because it has a high resistance, it can reduce signal delay, and it is easy to etch, so it is easy to process. Copper has high electrical conductivity, which reduces signal delay. Molybdenum can be used in contact with oxide semiconductors such as ITO and IZO, or silicon. Even if the material is not properly processed, it can be manufactured without any problems such as defects. Titanium is desirable because it is easy to apply and has high heat resistance. Even if it comes into contact with conductors or silicon, it can be manufactured without causing problems such as material defects. Tungsten is desirable because it has high heat resistance. Neodymium is preferable because it has high heat resistance. In particular, the combination of neodymium and aluminum When alloyed with aluminum, heat resistance improves and aluminum becomes less likely to develop hillocks. Silicon can be formed simultaneously with the semiconductor film of the transistor, It is also desirable because of its high heat resistance. Zinc oxide (IZO), indium tin oxide doped with silicon dioxide (ITSO), zinc oxide (ZnO) and silicon (Si) have translucency, so they are used in areas where light can pass through. For example, it can be used as a pixel electrode or a common electrode. can be done.

[0069] The wiring and electrodes may be formed in a single layer, or may have a multi-layer structure. By forming it in a single layer structure, the manufacturing process can be simplified and the number of days required for the process can be reduced. In addition, by using a multi-layer structure, each Making the most of the advantages of materials and reducing their disadvantages to form high-performance wiring and electrodes For example, it is possible to include a low-resistance material (such as aluminum) in the multilayer structure. By doing so, it is possible to reduce the resistance of the wiring. In this way, for example, a material with low heat resistance but other advantages can be used in place of a material with high heat resistance. By using a laminated structure sandwiching the wiring and electrodes, the heat resistance of the wiring and electrodes as a whole can be improved. For example, a layer containing aluminum is sandwiched between layers containing molybdenum or titanium. It is desirable to have a laminated structure with a shape that is easy to handle. For example, if one material is mixed with another, They penetrate into the material, changing its properties and making it unable to fulfill its intended purpose, or making it difficult to manufacture. When doing so, problems may occur and normal manufacturing may not be possible. In this case, the problem can be solved by sandwiching or covering one layer with another. For example, if you want to contact indium tin oxide (ITO) and aluminum, you need It is desirable to sandwich titanium or molybdenum between them. Also, it is preferable to place silicon and aluminum in contact with each other. If this is desired, it is desirable to sandwich titanium or molybdenum between them.

[0070] The gate wiring 105 is made of a material having higher heat resistance than the source wiring 108. This is because the gate wiring 105 is exposed to a higher temperature during the manufacturing process. This is because they are often placed

[0071] The source wiring 108 is made of a material having a lower resistance than the gate wiring 105. This is because the gate wiring 105 is supplied with binary signals of H signal and L signal. However, an analog signal is applied to the source wiring 108, and it may contribute to the display. Therefore, a signal of accurate magnitude can be supplied to the source line 108. Therefore, it is desirable to use a material with low resistance.

[0072] Although the auxiliary wiring 106 may not be provided, providing the auxiliary wiring 106 can The potential of the common electrode in the pixel can be stabilized. The source wiring 10 is arranged approximately parallel to the gate line, but is not limited to this. In that case, the source wiring 108 may be made of the same material as the source wiring 108. It is desirable that this be done.

[0073] However, the aperture ratio can be increased by arranging the auxiliary wiring 106 approximately parallel to the gate line. This is preferable because it allows for efficient layout.

[0074] FIG. 1(B) is a cross-sectional view taken along lines EF and GH of FIG. 1(A). As shown in FIG. 1(A), a first electrode for controlling the alignment direction of the liquid crystal is formed on a part of the substrate 100. However, another layer is disposed between the substrate 100 and the first electrode 101. It may be placed.

[0075] The substrate 100 may be a glass substrate, a quartz substrate, a substrate made of an insulating material such as alumina, or a substrate made of a material other than a glass substrate. A plastic substrate, a silicon substrate, or a metal substrate that has heat resistance that can withstand the processing temperature of Alternatively, polysilicon may be used.

[0076] When the display device is operated as a transmissive display device, the substrate 100 must be optically transparent. It is desirable that:

[0077] The first electrode 101 is a light-transmitting conductive film (for example, ITO (indium tin oxide) film, IZO (indium zinc oxide) film, ZnO film, or polysilicon film with impurities It is made of a silicon film or amorphous silicon film and functions as a common electrode. As shown in FIG. 1A, the first electrode 101 is connected vertically. By connecting them, the resistance of the common electrode is reduced, making it easier to apply a specified voltage. .

[0078] An insulating film 102 is formed on the first electrode 101 and the substrate 100. Insulating Film 102 is a film that prevents impurities from diffusing from the substrate 100 and functions as a base film. The insulating film 102 is made of, for example, silicon oxide (SiO x ), silicon nitride (SiN x ) , silicon oxynitride (SiO x N y :x>y), silicon oxynitride (SiN x O y :x> y), and is formed from an insulating material containing oxygen or nitrogen. It is also possible to use a laminated film having an insulating film 102 between the substrate 100 and the first electrode 101. There may be an insulating film having the same function.

[0079] A semiconductor film 103 is formed on the insulating film 102. The semiconductor film 103 has a thin film transistor. The impurity region 103a becomes the source of the transistor 121, and the impurity region 10b becomes the drain. The impurity regions 103a and 103b are, for example, n-type impurity regions. However, it may be a p-type impurity region. The impurity that gives n-type conductivity is, for example, phosphorus ( P) and arsenic (As), and impurities that give p-type conductivity include boron (B) and Gallium (Ga) is one of them.

[0080] As shown by the dotted line in FIG. 1A, the first electrode 101 has one corner of a rectangle (the upper left corner in the figure). The rectangular corners are cut out and are formed over almost the entire surface of the pixel. A thin film transistor 121 is disposed in the corner-cut portion 101d. By disposing the transistor 121, the area effective for display in the pixel can be more efficiently used. In other words, the aperture ratio can be improved. The film is, for example, a polysilicon film, but other semiconductor films (e.g., amorphous silicon film, monolithic silicon film) can also be used. The film may be a crystalline silicon film, an organic semiconductor film, or a carbon nanotube.

[0081] A gate insulating film 104 of the thin film transistor 121 is formed so as to cover the semiconductor film 103. It is being done.

[0082] However, the gate insulating film 104 is disposed only in the vicinity of the channel region, and in other parts In addition, thickness and layer structure may vary depending on the location. For example, the thickness may be high only near the channel, or the number of layers may be large, while the thickness may be low in other areas. In some cases, the thickness of the film may be thin or the number of layers may be small. This makes it easier to control the doping of impurities into the gate and drain regions. By changing the thickness of the insulating film 104 and the number of layers, the amount of impurities added to the semiconductor film can be varied in different places. Therefore, the LDD region can be formed in such a manner that the LDD region is changed. This reduces leakage current and suppresses the generation of hot carriers, improving reliability. It is possible to do this.

[0083] The gate insulating film 104 is made of, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y :x>y), silicon oxynitride (SiN x O y :x It is made of insulating materials containing oxygen or nitrogen, such as y. On the gate insulating film 104, a layered film may be formed. As shown in FIG. 1(B) and FIG. 1(A), gate electrodes 105a and 105b are formed. As shown, the gate electrodes 105a and 105b are connected to the auxiliary wiring 106 and the gate wiring 105. The gate electrodes 105a, 105b are electrically connected to the gate wiring 105. The semiconductor film 103 located below each of these functions as a channel region 103c. The semiconductor film 103 located between the two channel regions 103c also has an impurity region 103 In this embodiment, the same impurities as those in the gate electrodes 103a and 103b are introduced. However, the present invention is not limited to this configuration. .

[0084] A first interlayer insulating film 10 is formed on the gate insulating film 104 and the gate electrodes 105a and 105b. The first interlayer insulating film 107 may be made of an inorganic material or an organic material. Organic materials include polyimide, acrylic, polyamide, polyimideamide, and Examples of inorganic materials that can be used include siloxane, polysilazane, and the like. Silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y :x>y), silicon oxynitride (SiN x O y :x>y) and so on, containing oxygen or nitrogen An insulating material can be used. Alternatively, a laminated film made by laminating a plurality of these films can be used. Alternatively, a laminated film may be formed by combining an organic material and an inorganic material. The insulating film 104 and the first interlayer insulating film 107 have a contact hole located above the impurity region 103a. , a contact hole located on the impurity region 103b, a contact hole located on the first electrode 101, and A contact hole is formed on the first interlayer insulating film 107, the contact hole being located above the auxiliary wiring 106. A source wiring 108, a connecting conductive film 109, and a connecting conductive film 110 are formed.

[0085] In addition, by using inorganic materials as the insulating film, it is possible to prevent the penetration of moisture and impurities. In particular, using a layer containing nitrogen has a high ability to block moisture and impurities.

[0086] In addition, by using an organic material as the insulating film, the surface can be made flat. Therefore, it can have a positive effect on the layer above it. For example, The layer formed on the substrate can also be made flat, which prevents the alignment of the liquid crystal from becoming distorted. come.

[0087] The source wiring 108 is located above the impurity region 103a, and a part of it is buried in the contact hole. Therefore, the source electrode is electrically connected to the impurity region 103a. The conductive film 109 for connection is present as a part of the source wiring 108. A part of the insulating film is buried in the contact hole, and is electrically connected to the impurity region 103b. By disposing the conductive film 109 for connection as described above, it is not necessary to make the connection hole deep. And it can be formed accurately.

[0088] However, as shown in FIG. 2(B), the second electrode 112 and the impurity region 103b are The connection may be made directly without the use of the connecting conductive film 109 shown in FIG. 1(B). The contact hole for connecting the electrode 112 and the impurity region 103b needs to be opened deeply. However, since the connecting conductive film 109 is not required, the area can be used as an opening area for image display. This improves the aperture ratio and reduces power consumption.

[0089] The connecting conductive film 110 is located above the auxiliary wiring 106, and a part of the connecting conductive film 110 is embedded in the connecting hole. By incorporating the wiring 106, the wiring 106 is electrically connected to the first electrode 101. In this way, the first electrode 101 is electrically connected to the auxiliary wiring 106 via the connecting conductive film 110. It should be noted that a plurality of connecting conductive films 110 may be provided. By doing so, the potential of the first electrode 101 is stabilized. By connecting the first electrode 101 and the auxiliary wiring 106, the number of times that connection holes need to be opened can be reduced. This allows the process steps to be simplified.

[0090] The connecting conductive film 110 was formed at the same time as the source wiring 108 using the same material. However, the present invention is not limited to this. The second electrode 112 may be formed at the same time as the first electrode 112 using the same material. .

[0091] The source wiring 108, the connecting conductive film 109, the connecting conductive film 110, and the first interlayer insulating film 1 A second interlayer insulating film 111 is formed on the insulating film 07. The second interlayer insulating film 111 may be made of an inorganic material or an organic material. The organic materials include polyimide, acrylic, polyamide, and polyimide ammonia. The inorganic material may be a metal, a resist, a siloxane, a polysilazane, or the like. Silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (Si O x N y :x>y), silicon oxynitride (SiN x O y :x>y) and oxygen or nitrogen In addition, a laminated film in which a plurality of these films are laminated can be used. Alternatively, a laminated film may be formed by combining an organic material and an inorganic material. In 111, a contact hole located above the conductive film 109 for connection is formed.

[0092] A second electrode 112 for controlling the alignment direction of the liquid crystal is formed on the second interlayer insulating film 111. The second electrode 112 functions as a pixel electrode to which an individual voltage is supplied for each pixel. ITO (indium tin oxide), ZnO (zinc oxide), indium oxide, 2 to 20 wt% IZO (indium zinc oxide) formed using a target mixed with ZnO The second electrode 112 is formed by a part located above the connecting conductive film 109. A part of this portion is embedded in the contact hole, and the contact conductive film 109 In this way, the second electrode 112 is electrically connected to the first electrode 112 via the connecting conductive film 109. It is electrically connected to the impurity region 103 b of the thin film transistor 121 .

[0093] As shown in FIG. 2, when the connecting conductive film 109 is not provided, the second electrode 112 is a thin It is directly connected to the impurity region 103 b of the film transistor 121 .

[0094] As shown in FIG. 2 and FIG. 1(A), the second electrode 112 is substantially rectangular, and the first electrode 1 The aperture pattern is located above the aperture plate 01 and has a plurality of aperture patterns 112a and 112b. Examples of the grooves 112a and 112b include many slit-shaped grooves that are parallel to each other. In the example shown in the figure, the opening patterns 112a and 112b are oriented such that ... Although they are diagonal, the opening pattern 112a is located in the upper half of the pixel in the drawing, and the opening pattern 112b is located in the lower half. The opening patterns 112a and 112b are formed in different directions. By this, a component parallel to the substrate is formed between the first electrode 101 and the second electrode 112. An electric field is generated above the second electrode 112. Therefore, the potential of the second electrode 112 can be controlled by This makes it possible to control the alignment direction of the liquid crystal, which will be described later.

[0095] In addition, opening patterns 112a and 112b, which have different opening patterns, may be used. By arranging the liquid crystal molecules in this way, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. This means that it can be made into a multi-domain structure. By making it into a multi-domain structure, This prevents the image from appearing incorrectly when viewed from a specific angle. As a result, the viewing angle can be improved.

[0096] The shape of the opening pattern is not limited to that of this embodiment. The shape of the opening pattern described can also be applied. For example, the spaces between the teeth of a comb-shaped electrode are formed with a conductive pattern. The characters in the parentheses are treated as including spaces that are not included in the parentheses.

[0097] As shown in FIG. 1A, when viewed from a direction perpendicular to the substrate 100, The first electrode 101 functions as an electrode, and the second electrode 112 functions as a pixel electrode. By doing this, the signal is received and the floating state is maintained. The second electrode 112 in this state is the source of the signal transmitted to other pixels via the source line 108. As a result, image defects such as crosstalk can be reduced. The present invention is not limited to such an electrode structure, and the common electrode may be It may have a portion disposed inside the element electrode.

[0098] A first alignment film 113 and a liquid crystal 11 are disposed on the second interlayer insulating film 111 and the second electrode 112. The liquid crystal 114 may be a ferroelectric liquid crystal (FLC), a nematic liquid crystal, or the like. , smectic liquid crystals, liquid crystals that have homogeneous alignment, liquid crystals that have homeotropic alignment On the liquid crystal 114, a second alignment film 115 and a color The opposing substrate 120 is disposed via a filter 116. Each of the substrates 120 is provided with a polarizing plate 119, 118.

[0099] In addition to the polarizing plate, a retardation plate, a λ / 4 plate, etc. are often arranged.

[0100] In the above-described configuration, the first electrode 101 and the second electrode 112 are formed with an opening pattern. The capacitance is formed by the areas where no capacitors are formed and the insulating films located between them. The formation of this capacitance increases the storage capacitance.

[0101] Next, an example of a method for manufacturing a semiconductor device or a liquid crystal display device according to the present invention will be described. A conductive film (e.g., an ITO (indium tin oxide) film, an ITO film, an ITO film) having optical transparency is formed on the substrate 100. O film, ZnO film, or Si film) is formed on the conductive film. The photoresist film is then exposed and developed. A resist pattern is then formed on the conductive layer using this resist pattern as a mask. The conductive film is selectively removed, and the first conductive film is left on the substrate 100. The electrode 101 is formed, and then the resist pattern is removed.

[0102] Next, an insulating film 102 is formed on the substrate 100 and the first electrode 101. It is desirable that the insulating film 02 be formed thicker than the gate insulating film 104 described later. A semiconductor film (for example, a polysilicon film) is formed on the film 102, and this semiconductor film is then The insulating film 102 is selectively removed by etching using a turn. A semiconductor film 103 having a shape similar to that of a semiconductor film 103 is formed.

[0103] Next, a gate insulating film 104 is formed on the semiconductor film 103 and the insulating film 102. The gate insulating film 104 is, for example, a silicon oxynitride film or a silicon oxide film, and is The gate insulating film 104 is formed by the D method. The gate insulating film 10 may be formed of a multilayer film containing silicon and silicon oxide. A conductive film is formed on the substrate 4, and the conductive film is etched using a resist pattern as a mask. As a result, the gate insulating film located on the semiconductor film 103 is selectively removed. Gate electrodes 105a and 105b are formed on the film 104. A port wiring 105 and an auxiliary wiring 106 are formed.

[0104] As described above, by providing the auxiliary wiring 106, the first electrode The potential of the electrode 101 can be stabilized. In addition, the auxiliary wiring 106 does not need to be formed. In addition, the auxiliary wiring 106 may be formed in another layer (for example, the same layer as the source wiring 108 or the first electrode The second electrode 101 may be provided in the same layer as the first electrode 102, or in the same layer as the second electrode 112, or may be divided into a plurality of layers. In addition, in FIG. 1B, the auxiliary wiring 106 may be directly connected to the source wiring 108. However, it may be configured to extend in the same direction as the source line 108. stomach.

[0105] The conductive film may be made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), or the like. Mo, Tungsten (W), Neodymium (Nd), Chromium (Cr), Nickel ( Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu), magnesium (Mg), Scandium (Sc), cobalt (Co), zinc (Zn), niobium (Nb), silicon ( Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (I one or more elements selected from the group consisting of tin (Sn), oxygen (O), or The compound or alloy material (e.g., Ion) containing one or more elements selected from the group Indium tin oxide (ITO), indium zinc oxide (IZO), and indium oxide with silicon dioxide Indium tin oxide (ITSO), zinc oxide (ZnO), aluminum neodymium (Al-Nd) , magnesium silver (Mg-Ag), etc.), or combinations of these compounds Or, a compound of these with silicon (silicide) (for example , aluminum silicon, molybdenum silicon, nickel silicide, etc.) and their combinations with nitrogen It is formed with a compound (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.). Silicon (Si) is doped with many n-type impurities (such as phosphorus) and p-type impurities (such as boron). It may contain

[0106] The wiring and electrodes may be formed in a single layer, or may have a multi-layer structure. By forming it in a single layer structure, the manufacturing process can be simplified and the number of days required for the process can be reduced. In addition, by using a multi-layer structure, each Making the most of the advantages of materials and reducing their disadvantages to form high-performance wiring and electrodes For example, it is possible to include a low-resistance material (such as aluminum) in the multilayer structure. By doing so, it is possible to reduce the resistance of the wiring. In this way, for example, a material with low heat resistance but other advantages can be used in place of a material with high heat resistance. By using a laminated structure sandwiching the wiring and electrodes, the heat resistance of the wiring and electrodes as a whole can be improved. For example, a layer containing aluminum is sandwiched between layers containing molybdenum or titanium. It is desirable to have a laminated structure with a shape that is easy to handle. For example, if one material is mixed with another, They penetrate into the material, changing its properties and making it unable to fulfill its intended purpose, or making it difficult to manufacture. When doing so, problems may occur and normal manufacturing may not be possible. In this case, the problem can be solved by sandwiching or covering one layer with another. For example, if you want to contact indium tin oxide (ITO) and aluminum, you need It is desirable to sandwich titanium or molybdenum between them. Also, it is preferable to place silicon and aluminum in contact with each other. If this is desired, it is desirable to sandwich titanium or molybdenum between them.

[0107] Next, impurities are implanted into the semiconductor film 103 using the gate electrodes 105a and 105b as a mask. As a result, impurity regions 103a and 103b and a gate electrode are formed in the semiconductor film 103. An impurity region is formed between the electrodes 105a and 105b. The impurity elements may be implanted individually, or a specific region may be implanted with n-type impurity elements and p-type impurity elements. However, in the latter case, n-type impurity elements or p-type impurity elements may be implanted together. In this step, the amount of implantation of one of the resist elements is larger than the other. The pattern may be used as a mask.

[0108] At this time, by changing the thickness and stack structure of the gate insulating film 104, the LDD region In the area where the LDD region is to be formed, the gate insulating film 104 may be formed thick. As a result, the amount of impurities injected is reduced, and the L The DD region can be easily formed.

[0109] When impurities are implanted into the semiconductor film 103, the gate electrodes 105a and 105b are formed. For example, it may be performed before or after the gate insulating film 104 is formed. In this case, a resist pattern is used as a mask to form the gate. A capacitance can be formed between the electrode of the layer and the semiconductor film into which impurities are injected. A gate insulating film is placed between the electrode on the same layer as the gate and the semiconductor film into which impurities are injected. Therefore, the film thickness is thin and a large capacitance can be formed.

[0110] Next, the first interlayer insulating film 107 and each connection hole are formed. A conductive film (for example, a metal film) is formed on the contact hole 7 and in each contact hole. This selectively removes the source wiring 108 and the connecting wiring 109. A conductive film 109 and a connecting conductive film 110 are formed.

[0111] Next, the second interlayer insulating film 111 and each connection hole are formed. A conductive film (e.g., ITO film, IZO film, ZnO film, or Si film) is formed, and this conductive film is selectively etched using a resist pattern. As a result, the second electrode 112 is formed.

[0112] The contact hole in which a part of the contact conductive film 109 is buried and the part of the second electrode 112 are connected to each other. The positions of the contact holes in which the contact portions are embedded are different from each other. Even if the portions of the connecting conductive film 109 and the second electrode 112 located above the connection hole are recessed, Therefore, a deep recess is formed in the second electrode 112. This prevents the occurrence of the above-mentioned defects in the resist pattern. Remove the turn.

[0113] Next, a first alignment film 113 is formed, and a counter substrate 120 on which a second alignment film 115 is formed is connected to the counter substrate 120. Then, the liquid crystal 114 is sealed between the opposing substrate 120 and the substrate 120 on the side not in contact with the liquid crystal 114. 100, polarizing plates 118, 119, retardation plates (not shown), λ / 4 plates and other optical films ( (not shown), and optical films such as a diffusion plate and a prism sheet are provided. For backlighting, direct or side light types are used. Cold cathode fluorescent lamps and LEDs (light emitting diodes) can be used as light sources. The LEDs are white LEDs and LEDs of different colors (e.g., white, red, blue, green, cyan). When using LEDs, the wavelength of light can be In the case of a side light type, the light guide plate is In this way, a liquid crystal display device is formed.

[0114] The term "liquid crystal display device" refers to the portion consisting of only the substrate, the opposing substrate, and the liquid crystal sandwiched between them. Furthermore, the liquid crystal display device is a device in which optical films such as polarizing plates and retardation plates are arranged. It may also include diffusers, prism sheets, and light sources (cold cathode tubes and LEDs). ) or a light guide plate.

[0115] As described above, according to the second embodiment of the present invention, the liquid crystal display device in which the alignment direction of the liquid crystal is controlled by the FFS method is In the display device, the first electrode 101 is disposed on the substrate 100, i.e., under the insulating film 102. Therefore, compared to the case where the first electrode 101 is disposed on the insulating film 102, Therefore, the distance between the first electrode 101 and the second electrode 112 can be increased. As a result, the degree of freedom in the spacing between the first and second electrodes 112 is improved. The spacing between the lines and the width of the opening pattern are optimized depending on the distance between the pixel electrode and the common electrode. Since the values ​​change, the size, width and spacing of the opening pattern can also be freely set. This allows the gradient of the electric field applied between the electrodes to be controlled, for example, by It is easy to increase the electric field in the parallel direction. In the device, the liquid crystal molecules aligned parallel to the substrate (so-called homogeneous alignment) are Since it can be controlled in a direction parallel to the substrate, the viewing angle can be widened by applying an optimal electric field.

[0116] In addition, even if the thickness of the insulating film 102 is changed, the operation of the transistor is not affected. Therefore, the distance between the first electrode 101 and the second electrode 112 can be freely controlled. It can be expanded freely.

[0117] Furthermore, by making the insulating film 102 thick, the first The distance between the electrode 101 and the second electrode 112 is increased to apply an appropriate electric field to the liquid crystal 114. When the gate insulating film 104 is thinned, the current driving capability of the thin film transistor 121 is and the gate capacitance can be improved.

[0118] The gate electrode 105a and the gate wiring 105 may be formed in different layers. The material may be selected from the group consisting of:

[0119] The connecting conductive film 109 is disposed on the same layer as the source wiring 108, but other wiring layers ( For example, the gate wiring 105, the first electrode 101, or the second electrode 112) The gate insulating film 104 does not have to be formed on the entire surface.

[0120] Also, the contact hole in which part of the second electrode 112 is buried is covered with part of the contact conductive film 109. It may be formed at a position overlapping the buried contact hole. In this case, it is possible to fit them in one place. This allows for an efficient layout, improving the pixel aperture ratio. It can be done.

[0121] In this embodiment, a gate electrode is disposed above the channel region, which is called a top Although the gate type thin film transistor has been described, the present invention is not particularly limited to this. It is not a bottom-gate type thin-film transistor in which the gate electrode is placed below the channel region. It may be a thin-film transistor, or may have a structure in which gate electrodes are arranged above and below the channel region. A transistor may be formed that

[0122] The liquid crystal display device may be a transmissive type, a semi-transmissive type, or a reflective type. In the semi-transmissive liquid crystal display device, for example, the first electrode 101 is formed of a light-transmitting film (e.g., For example, ITO (indium tin oxide) film, IZO (indium zinc oxide) film, ZnO film, or an impurity-doped polysilicon film or an amorphous silicon film) This can be achieved by forming the second electrode 112 from a metal film. The first electrode 101 is formed of a metal film. If the remaining portion is made of a light-transmitting film, a semi-transmitting liquid crystal display device can be realized. In the liquid crystal display device of this type, the first electrode 101 is made of a metal film, The insulating layer 101 can be made to function as a reflector. An insulating film (for example, a silicon oxide film) is provided, and a metal film is formed as a reflective film within this insulating film. Furthermore, a reflective sheet (for example, aluminum) can be provided on the outer surface of the substrate 100 as a reflective film. It is also possible to provide a film of aluminum. can be applied to

[0123] (Third embodiment) FIG. 3A is a plan view illustrating the configuration of a liquid crystal display device according to a third embodiment. FIG. 3B is a cross-sectional view taken along the lines EF and GH of FIG. 3A. The first electrode 101 is electrically connected to the impurity region 103b of the thin film transistor 121. The second electrode 112 is electrically connected to the auxiliary wiring 106 and functions as a pixel electrode. When viewed from a direction perpendicular to the substrate 100, The second electrode 112 extends beyond the first electrode 101, and the first electrode 1 The structure is generally the same as that of the second embodiment except for the connection structure between the first electrode 112 and the second electrode 112 and each wiring. The method for manufacturing the liquid crystal display device according to this embodiment is substantially the same as that of the second embodiment. Therefore, the contents described in the second embodiment can also be applied to this embodiment. Hereinafter, parts having the same configuration as those in the second embodiment will be given the same reference numerals and the description thereof will be omitted. Abbreviated.

[0124] In this embodiment, the first interlayer insulating film 107, the gate insulating film 104, and the insulating film 102 A contact hole is formed in the first interlayer insulating film 107, which is located above the first electrode 101. The gate insulating film 104 has a gate insulating film 104a and a gate insulating film 104b on the impurity regions 103a and 103b of the thin film transistor 121. In addition, the first interlayer insulating film 107 has a contact hole formed therein, which is located at the position of the auxiliary wiring 106. An overlying contact hole is formed.

[0125] The connecting conductive film 109 extends from above the impurity region 103b to above the first electrode 101. The impurity region 103b and the first electrode 103c are connected by being partially embedded in the contact hole. In this way, the first electrode 101 is electrically connected to the connecting conductors 101. The conductive film 109 is electrically connected to the impurity region 103b. 10 is electrically connected to the auxiliary wiring 106 by being partially embedded in the connection hole. .

[0126] The first electrode 101 is provided with a conductive film for connection formed in the same layer as the second electrode 112. The impurity region 103b may be electrically connected to the impurity region 103b through the impurity region 103b.

[0127] In addition, a contact hole located above the connecting conductive film 110 is formed in the second interlayer insulating film 111. The second electrode 112 is partially embedded in the contact hole, and is connected to the contact conductive film 11. 0. In this way, the second electrode 112 is electrically connected to the connecting conductive film 110. As shown in FIG. 3A, the auxiliary wiring 106 is electrically connected to the auxiliary wiring 106. The adjacent second electrodes 112 are partially connected to each other.

[0128] It should be noted that the auxiliary wiring 106 and the second electrode 112 may be directly connected without disposing the connecting conductive film 110. The power supply may be connected to the power supply.

[0129] In this embodiment, the connecting conductive film 110 is formed at each of the four corners of the first electrode 101. Of these, they are formed above each of the three corners except for the corner near the thin film transistor.

[0130] This embodiment also provides the same effects as the second embodiment. In this embodiment, the connecting conductive film 110 may not be provided. In this case, the first and second layers In the insulating films 107 and 111, a connection hole is formed that is located above the auxiliary wiring 106. A part of the second electrode 112 is embedded in this connection hole, thereby connecting the auxiliary wiring 106 and the second electrode 112. In this case, the aperture ratio can be improved. However, when the connecting conductive film 110 is provided, the first and second interlayer insulating films 107 and 111 are Even if a positional deviation occurs in the formed contact hole, this positional deviation is absorbed by the conductive film 110 for contact. It can be collected.

[0131] As shown in FIG. 3, the first electrode 101 functions as a pixel electrode, and the second electrode 11 2 functions as a common electrode, and the common electrode is arranged closer to the liquid crystal than the pixel electrode. As a result, even if the voltage of the pixel electrode changes for each pixel, the voltage of the common electrode remains constant. Therefore, the electric field in the area where the liquid crystal is present is less susceptible to the influence of adjacent pixels, and crosstalk For example, depending on the image to be displayed, the signal input to the adjacent pixels may be large. Although there may be cases where the common electrode is disposed close to the liquid crystal as in this embodiment, By using this, crosstalk can be prevented.

[0132] Although only one pixel is shown in FIG. 3, in reality, multiple pixels are arranged in a matrix. In this case, the second electrodes 112 of the pixels may be connected to each other. By doing so, the resistance is reduced and a sufficient voltage is applied to the second electrode 112. This can be done.

[0133] This embodiment is a partial modification, improvement, or variation of the second embodiment. Therefore, the contents described in the second embodiment also apply to this embodiment. They can be applied and combined.

[0134] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0135] (Fourth embodiment) FIG. 4A is a plan view illustrating the configuration of a liquid crystal display device according to a fourth embodiment of the present invention. 4(B) is a cross-sectional view taken along line AB and line CD of FIG. 4(A). In the liquid crystal display device according to the present embodiment, the shape of the opening pattern 112c formed in the second electrode 112 is different. and that the first electrode 101 has an opening pattern 101a formed therein. That is, the liquid crystal display device according to this embodiment is an IPS type liquid crystal display device. This is a device that controls the alignment direction of liquid crystals in a manner that is perpendicular to the liquid crystal display device. In this case, the pixel electrodes and the common electrodes are alternately arranged and approximately parallel in the main part. In the example, the pixel electrode and the common electrode located at the lower position do not have an opening pattern. The method for manufacturing the liquid crystal display device according to this embodiment is generally the same as that of the third embodiment. Therefore, the contents described in the third embodiment can also be applied to this embodiment. The contents described in the second embodiment are also applicable to the third embodiment. The same configurations as those in the third embodiment will be applied to the second embodiment as well. The symbols are given and the explanation is omitted.

[0136] The opening patterns 112c and 101a are each extended in a zigzag pattern up and down in FIG. 4(A). The opening pattern 101a is formed in the opening pattern 112c of the second electrode 112. are located below and around the uninhabited area.

[0137] In addition, opening patterns having different orientations, such as opening patterns 112c and 101a, By arranging the liquid crystal molecules in this way, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. This means that it can be made into a multi-domain structure. By making it into a multi-domain structure, This prevents the image from appearing incorrectly when viewed from a specific angle. As a result, the viewing angle can be improved.

[0138] This embodiment also provides the same effects as the third embodiment. In this embodiment, the shape of the second electrode 112 and the shape of the opening pattern 112c, and the shape of the first electrode 112 are The shape of the electrode 101 and the opening pattern 101a is the same as that of the second electrode 1 in the second embodiment. However, the shape of the opening pattern 112c may be the same as that of the substrate 100. When viewed from a vertical direction, the opening patterns 101a and 112c are The second electrodes 112 need to be arranged alternately and approximately parallel to each other except for the peripheral portion. However, it is not limited to these.

[0139] In addition, in the FFS type liquid crystal display device shown in the second or third embodiment, In this embodiment, the shape of the second electrode 112 and the shapes of the opening patterns 112a and 112b are It may be in the shape shown.

[0140] In addition, the first electrode 101 is overlapped with the second electrode 112 and the auxiliary wiring 106. By doing so, a capacitance can be formed, which can be used as a storage capacitance. .

[0141] In this embodiment, the contents described in the second and third embodiments are partially modified, improved, or changed. Therefore, the contents described in the second and third embodiments are not applicable to this embodiment. The present invention can be applied to the embodiments and can be combined with them.

[0142] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0143] (Fifth embodiment) FIG. 5A illustrates the configuration of an IPS liquid crystal display device according to a fifth embodiment of the present invention. FIG. 5(B) is a cross-sectional view taken along line AB and a cross-sectional view taken along line CD of FIG. 5(A). In this embodiment, the first electrode 101 is electrically connected to the auxiliary wiring 106, and the common electrode The second electrode 112 is electrically connected to the connecting conductive film 109. The first electrode 101 and the second electrode 112 function as pixel electrodes. Except for the connection structure of each wiring, the configuration is the same as that of the fourth embodiment. The method for manufacturing the liquid crystal display device is substantially the same as that of the fourth embodiment. Portions with similar configurations are given the same reference numerals and descriptions thereof will be omitted.

[0144] Therefore, the contents described in the first to fourth embodiments also apply to this embodiment. It is possible to use it.

[0145] In this embodiment, the connecting conductive film 110 shown in the third embodiment is not formed. Instead, the gate insulating film 104 and the insulating film 102 are provided with a layer of a metal oxide film located on the first electrode 101. A portion of the auxiliary wiring 106 is embedded in this connection hole. As a result, it is electrically connected to the first electrode 101.

[0146] The contact holes are formed before the gate electrodes 105a and 105b are formed.

[0147] By arranging in this way, an efficient layout can be achieved, improving the aperture ratio. It is possible to do this.

[0148] In addition, the second interlayer insulating film 111 does not have a contact hole located above the connecting conductive film 110. Instead, a contact hole is formed on the connecting conductive film 109. The electrode 112 is partially embedded in the connection hole, and thus is electrically connected to the connection conductive film 109. are emotionally connected.

[0149] Although the second electrode 112 is electrically connected to the connecting conductive film 109, The connecting conductive film 109 is not provided, and the impurity region 103b is electrically connected to the connecting conductive film 109. It's fine.

[0150] In this embodiment, the shape of the second electrode 112 and the shape of the opening pattern 112c are , and the shapes of the first electrode 101 and the opening pattern 101a are the same as those in the second embodiment. The shape of the second electrode 112 and the shape of the opening pattern 112c may be the same. When viewed from a direction perpendicular to 00, the opening patterns 101a and 112c are The first electrode 101 and the second electrode 112 are arranged alternately and substantially parallel to each other except for the peripheral portions thereof. It needs to be done.

[0151] In addition, opening patterns having different orientations, such as opening patterns 112c and 101a, By arranging the liquid crystal molecules in this way, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. This means that it can be made into a multi-domain structure. By making it into a multi-domain structure, This prevents the image from appearing incorrectly when viewed from a specific angle. As a result, the viewing angle can be improved.

[0152] In this embodiment, the contents described in the second to fourth embodiments are partially modified, improved, or changed. Therefore, the contents described in the second to fourth embodiments are not applicable to this embodiment. The present invention can be applied to the embodiments and can be combined with them.

[0153] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0154] (Sixth embodiment) FIG. 6A illustrates the configuration of an FFS-type liquid crystal display device according to a sixth embodiment of the present invention. FIG. 6(B) is a cross-sectional view taken along the line EF and a cross-sectional view taken along the line GH of FIG. 6(A). In this embodiment, the source wiring 108 is bent, and the third wiring 106 is arranged to match the source wiring 108. The first electrode 101 and the second electrode 112 are also bent, and the second electrode 112 has The opening pattern 112h extends along the source wiring 108 and is bent. This has the same configuration as the FFS type liquid crystal display device shown in the second embodiment. The contents described in the second embodiment can also be applied to this embodiment. The same reference numerals are used to designate parts having the same configuration as the embodiment, and the description thereof will be omitted.

[0155] Therefore, the contents described in the second to fifth embodiments also apply to this embodiment. It is possible to use it.

[0156] As shown in FIG. 6, opening patterns with different orientations can be arranged. By doing so, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. By using a multi-domain structure, it is possible to This prevents the image from appearing incorrectly when viewed from different angles. As a result, the viewing angle can be improved.

[0157] Furthermore, since the source wiring 108 is also bent along the opening pattern 112h, This allows for efficient layout and improves the aperture ratio.

[0158] This embodiment can also provide the same effects as the second embodiment. The shape of the opening pattern of the second electrode 112 in the second or fourth embodiment is The shape shown in FIG.

[0159] In this embodiment, the contents described in the second to fifth embodiments are partially modified, improved, or changed. Therefore, the contents described in the second to fifth embodiments are the same as those in this embodiment. The present invention can be applied to the embodiments and can be combined with them.

[0160] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0161] (Seventh embodiment) FIG. 7A illustrates the configuration of an FFS-type liquid crystal display device according to a seventh embodiment of the present invention. FIG. 7(B) is a cross-sectional view taken along the line EF and a cross-sectional view taken along the line GH of FIG. 7(A). In this embodiment, the source wiring 108 is bent, and the third wiring 106 is arranged to match the source wiring 108. The first electrode 101 and the second electrode 112 are also bent, and the second electrode 112 has The opening pattern 112h extends along the source wiring 108 and is bent. This has the same configuration as the FFS type liquid crystal display device shown in the third embodiment. The contents described in the third embodiment can also be applied to this embodiment. The same reference numerals are used to designate parts having the same configuration as the embodiment, and the description thereof will be omitted.

[0162] Therefore, the contents described in the second to sixth embodiments are also applicable to this embodiment. It is possible to use it.

[0163] As in the opening pattern 112h in FIG. 7, opening patterns with different orientations can be arranged. By doing so, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. By using a multi-domain structure, it is possible to This prevents the image from appearing incorrectly when viewed from different angles. As a result, the viewing angle can be improved.

[0164] Furthermore, since the source wiring 108 is also bent along the opening pattern 112h, This allows for efficient layout and improves the aperture ratio.

[0165] This embodiment can also provide the same effects as the third embodiment. The shape of the opening pattern of the second electrode 112 in the second or fourth embodiment is The shape shown in FIG.

[0166] In this embodiment, the contents described in the second to sixth embodiments are partially changed, improved, or This shows an example of a modified example. Therefore, the contents described in the second to sixth embodiments are , can be applied to this embodiment or can be combined.

[0167] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0168] (Eighth embodiment) FIG. 8A illustrates the configuration of an FFS-type liquid crystal display device according to an eighth embodiment of the present invention. FIG. 8(B) is a cross-sectional view taken along the line EF and a cross-sectional view taken along the line GH of FIG. 8(A). In this embodiment, a conductive film 160 is formed on the substrate 100, the conductive film 160 being positioned on the entire surface below the semiconductor film 103. This embodiment has the same configuration as the second embodiment except that In the manufacturing method of the liquid crystal display device, the conductive film 160 is formed in the same process as the first electrode 101. The second embodiment is substantially the same as the second embodiment except for the above points. The above can also be applied to this embodiment. The conductive film 160 is electrically connected to any of the members. The same configuration as in the second embodiment is used below. The same reference numerals are used for the parts and the explanation will be omitted.

[0169] Therefore, the contents described in the second to seventh embodiments are also applicable to this embodiment. It is possible to use it.

[0170] This embodiment also provides the same effects as the second embodiment. Since the conductive film 160 located below the semiconductor film 103 is formed on the insulating film 100, The film 102 may be a single layer of silicon oxide film. When the insulating film 102 is a single layer of silicon oxide film, impurities diffuse from the substrate 100 to the semiconductor film 103. Therefore, when silicon nitride is used for the insulating film 102, the diffusion of silicon nitride may not be sufficiently suppressed. However, when the silicon nitride film is brought into contact with the semiconductor film 103, a thin In this embodiment, the operation of the conductive film 16 0, even if the insulating film 102 is a single layer of silicon oxide film, The diffusion of impurities into the semiconductor film 103 can be sufficiently suppressed. By using a single layer of silicon oxide film, the operation of the thin film transistor 121 can be stabilized. Cut.

[0171] The insulating film 102 may have a laminated structure of a silicon oxide film and a silicon nitride film. If this is done, even if the silicon oxide film contains impurities such as iron, these impurities will not be absorbed into the semiconductor. In addition, the diffusion of impurities from the substrate 100 into the film 103 can be suppressed. It can be easily blocked.

[0172] The FFS type liquid crystal display device shown in the third embodiment and the fourth and fifth embodiments Even if the conductive film 160 is formed in each of the IPS liquid crystal display devices shown in the embodiments, In this embodiment, the same effect as that of the first embodiment can be obtained. 2 and the shape of the opening pattern 112a may be the shape shown in the fourth embodiment.

[0173] In addition, opening patterns 112a and 112b, which have different opening patterns, may be used. By arranging the liquid crystal molecules in this way, it is possible to create multiple regions in which the liquid crystal molecules move in different directions. This means that it can be made into a multi-domain structure. By making it into a multi-domain structure, This prevents the image from appearing incorrectly when viewed from a specific angle. As a result, the viewing angle can be improved.

[0174] In this embodiment, the contents described in the second to seventh embodiments are partially changed, improved, or This shows an example of a modified example. Therefore, the contents described in the second to seventh embodiments are , can be applied to this embodiment or can be combined.

[0175] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0176] (Ninth embodiment) FIG. 9A illustrates the configuration of an FFS-type liquid crystal display device according to a ninth embodiment of the present invention. 9(B) is a cross-sectional view taken along the line EF and GH of FIG. 9(A). In this embodiment, a part of the first electrode 101 is an impurity region 103 of the semiconductor film 103. This embodiment has the same configuration as the second embodiment, except that it extends to below b. The manufacturing method of the liquid crystal display device according to the present embodiment is substantially the same as that of the second embodiment. The contents explained in the first embodiment can also be applied to this embodiment. The same components as those in the previous embodiment are denoted by the same reference numerals and the description thereof will be omitted.

[0177] Therefore, the contents described in the second to eighth embodiments are also applicable to this embodiment. It is possible to use it.

[0178] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0179] This embodiment also provides the same effects as the second embodiment. In this embodiment, the shapes of the second electrode 112 and the opening pattern 112a are the same as those of the fourth embodiment. In addition, the FFS type liquid crystal display device shown in the sixth embodiment may have the shape shown in In the IPS type liquid crystal display devices shown in the first and second embodiments, Similarly, a portion of the first electrode 101 may be located below the impurity region 103b.

[0180] Furthermore, the FFS type liquid crystal display devices shown in the third and seventh embodiments and the fourth embodiment In each of the IPS liquid crystal display devices shown in the embodiments, the first A part of the electrode 101 may be located below the impurity region 103b. Since the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, the influence of noise, etc. As a result, the voltage of the impurity region 103b is stabilized. It is possible to narrow the gap between 2a and the electric field is applied smoothly, so the liquid Furthermore, by narrowing the intervals between the opening patterns 112a, the electric field This reduces the voltage, which also reduces power consumption. Therefore, the reliability of the thin film transistor 121 is also improved.

[0181] In this embodiment, the first electrode 101 is located below the impurity region 103b. The portion to be connected is separated from the main body of the first electrode 101 and electrically connected to the connecting conductive film 109. In this way, the above-mentioned effect can be obtained. Easier control, lower power consumption, and improved reliability of the thin film transistor 121 do.

[0182] (Tenth embodiment) FIG. 10A shows the configuration of an FFS-type liquid crystal display device according to a tenth embodiment of the present invention. 10(B) is a plan view for explaining the cross-sectional view taken along lines EF and GH of FIG. In this embodiment, a part of the first electrode 101 is formed in the impurity region of the semiconductor film 103. region 103b, two channel regions 103c, and an impurity region between the channel regions 103c. This has the same configuration as the ninth embodiment, except that it extends to below each of the regions. In addition, the method for manufacturing the liquid crystal display device according to this embodiment is substantially the same as that of the ninth embodiment. Therefore, the contents explained in the ninth embodiment can also be applied to this embodiment. The same components as those in the previous embodiment are designated by the same reference numerals, and the description thereof will be omitted.

[0183] Therefore, the contents described in the second to ninth embodiments are also applicable to this embodiment. It is possible to use it.

[0184] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0185] This embodiment also provides the same effects as the ninth embodiment. the FFS type liquid crystal display device shown in the first embodiment and the IPS type liquid crystal display device shown in the fifth embodiment In each of the liquid crystal display devices, a part of the first electrode 101 is impurity-free, as in the present embodiment. The impurities in the solid region 103b, the two channel regions 103c, and the impurities between the channel regions 103c The film may extend underneath each of the object regions.

[0186] In this embodiment, the shapes of the second electrode 112 and the opening pattern 112a are The shape shown in the fourth embodiment may also be used.

[0187] Furthermore, the FFS type liquid crystal display devices shown in the third and seventh embodiments and the fourth embodiment In each of the IPS liquid crystal display devices shown in the embodiments, the first A part of the electrode 101 is divided into an impurity region 103b, two channel regions 103c, and a channel region The impurity regions 103c may be extended to below the impurity regions between the regions 103c. Since the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, the influence of noise, etc. As a result, the voltage of the impurity region 103b is stabilized. It is possible to narrow the gap between 12a and the electric field is applied smoothly. It becomes easier to control the liquid crystal molecules. Since the voltage can be reduced, power consumption can also be reduced. In addition, the concentration of the electric field is also reduced. Therefore, the reliability of the thin film transistor 121 is improved.

[0188] In this embodiment, the impurity region 103b of the first electrode 101 and the two channels The impurity regions between the channel regions 103c are located below the respective impurity regions. The portion to be connected is separated from the main body of the first electrode 101 and electrically connected to the connecting conductive film 109. In this way, the above-mentioned effect can be obtained. Easier control, lower power consumption, and improved reliability of the thin film transistor 121 do.

[0189] (Eleventh embodiment) FIG. 11A shows the configuration of an FFS-type liquid crystal display device according to an eleventh embodiment of the present invention. 11(B) is a plan view for explaining the cross-sectional view taken along lines EF and GH of FIG. In this embodiment, a part of the first electrode 101 extends below the entire surface of the semiconductor film 103. Except for the fact that it is elongated, it has the same configuration as the tenth embodiment. The method for manufacturing the liquid crystal display device is substantially the same as that of the tenth embodiment. The contents described in the first embodiment can also be applied to this embodiment. Portions with similar configurations are given the same reference numerals and descriptions thereof will be omitted.

[0190] Therefore, the contents described in the second to tenth embodiments also apply to this embodiment. It is possible to apply

[0191] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0192] This embodiment also provides the same effects as the tenth embodiment. 8, even if the insulating film 102 is a single layer of silicon oxide film, the substrate 1 The diffusion of impurities from the insulating film 100 to the semiconductor film 103 can be sufficiently suppressed. By making 102 a single layer of silicon oxide film, the operation of the thin film transistor 121 becomes stable. It is possible.

[0193] In this embodiment, the shapes of the second electrode 112 and the opening pattern 112a are The shape shown in the fourth embodiment may also be used. In the liquid crystal display device of the first embodiment and the IPS type liquid crystal display device of the fifth embodiment, As in the present embodiment, a part of the first electrode 101 is extended to below the entire surface of the semiconductor film 103. That's fine.

[0194] Furthermore, the FFS type liquid crystal display devices shown in the third and seventh embodiments and the fourth embodiment In each of the IPS liquid crystal display devices shown in the embodiments, the first A part of the electrode 101 may be extended to below the entire surface of the semiconductor film 103. Since the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, the influence of noise, etc. As a result, the voltage of the impurity region 103b is stabilized. It is possible to narrow the gap between 12a and the electric field is applied smoothly. It becomes easier to control the liquid crystal molecules. Since the voltage can be reduced, power consumption can also be reduced. In addition, the concentration of the electric field is also reduced. Therefore, the reliability of the thin film transistor 121 is improved.

[0195] In this embodiment, the first electrode 101 located below the semiconductor film 103 The part is separated from the main body of the first electrode 101 and electrically connected to the connecting conductive film 109. In this way, the above-mentioned effect can be obtained. This makes it easier to operate the thin film transistor 121, reduces power consumption, and improves the reliability of the thin film transistor 121. .

[0196] (Twelfth embodiment) FIG. 12(A) shows the configuration of an FFS-type liquid crystal display device according to a twelfth embodiment of the present invention. 12(B) is a plan view for explaining the cross-sectional view taken along lines EF and GH of FIG. In this embodiment, a semiconductor film 103 is formed on a substrate 100, and a source wiring 108 is formed on the semiconductor film 103. A conductive film 170 is formed below the electrically connected impurity region 103a. and the conductive film 170 is electrically connected to the source wiring 108. The liquid crystal display device according to this embodiment has the same configuration as that of the second embodiment. This embodiment is the same as the second embodiment except that the conductive film 170 is formed in the same process as the first electrode 101. Therefore, the contents explained in the second embodiment are also applicable to this embodiment. Hereinafter, the same components as those in the second embodiment will be denoted by the same reference numerals, and the description thereof will be omitted. do.

[0197] Therefore, the contents described in the second to eleventh embodiments also apply to this embodiment. It is possible to apply

[0198] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0199] The first interlayer insulating film 107, the gate insulating film 104, and the insulating film 102 are provided with a conductive film 170. A connection hole is formed at the position of the source wiring 108. A part of the source wiring 108 is buried in this connection hole. By being embedded in the conductive film 170, the conductive film 170 is electrically connected to the conductive film 170.

[0200] This embodiment also provides the same effects as the second embodiment. The conductive film 17 located below the impurity region 103a electrically connected to the source wiring 108 The same voltage as that applied to the impurity region 103a is also applied to the impurity region 103a. The voltage stabilizes.

[0201] The FFS type liquid crystal displays shown in the third, sixth, seventh, ninth and tenth embodiments and the IPS liquid crystal display devices shown in the fourth and fifth embodiments. In this way, the conductive film 170 similar to that of this embodiment may be formed. For example, the voltage of the impurity region 103a can be stabilized. In this embodiment, the shape of the second electrode 112 and the opening pattern 112a is The shape may be the shape shown in the fourth embodiment.

[0202] (Thirteenth embodiment) FIG. 13A shows the configuration of an FFS-type liquid crystal display device according to a thirteenth embodiment of the present invention. 13(B) is a plan view for explaining the cross section of FIG. 13(A) taken along the lines EF and GH. In this embodiment, the conductive film 170 is formed in the impurity region 103a of the semiconductor film 103. and formed below the channel region 103c and the impurity region 103a adjacent to the A part of the first electrode 101 is a channel adjacent to the impurity region 103b of the semiconductor film 103. The same as in the twelfth embodiment except that it is formed under the region 103c and the impurity region 103b. The manufacturing method of the liquid crystal display device according to the present embodiment is the same as that of the twelfth embodiment. Therefore, the contents explained in the twelfth embodiment also apply to this embodiment. In the following, the same components as those in the twelfth embodiment will be denoted by the same reference numerals. , explanation will be omitted.

[0203] Therefore, the contents described in the second to twelfth embodiments also apply to this embodiment. It is possible to apply

[0204] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, This embodiment also allows for the same configuration as the twelfth embodiment. The same effects as those of the ninth embodiment can be obtained. The FFS type liquid crystal display device shown in the first embodiment and the liquid crystal display device shown in the fourth and fifth embodiments In each of the IPS liquid crystal display devices, a conductive film 170 similar to that of this embodiment is formed. The shape of the first electrode 101 may be the same as that of this embodiment. In this embodiment, the same effect as that of the first embodiment can be obtained. 2 and the shape of the opening pattern 112a may be the shape shown in the fourth embodiment.

[0205] (Fourteenth embodiment) FIG. 14A shows the configuration of an FFS-type liquid crystal display device according to a fourteenth embodiment of the present invention. 14(B) is a plan view for explaining the cross-sectional view taken along lines EF and GH of FIG. In this embodiment, the conductive film 170 is formed in the impurity region 103a of the semiconductor film 103. , two channel regions 103c, and an impurity region between the channel regions 103c. This embodiment has the same configuration as the twelfth embodiment, except that it is formed below the The method for manufacturing the liquid crystal display device according to this embodiment is substantially the same as that of the twelfth embodiment. The contents described in the twelfth embodiment are also applicable to this embodiment. The same components as those in the embodiment are denoted by the same reference numerals and the description thereof will be omitted.

[0206] Therefore, the contents described in the second to thirteenth embodiments also apply to this embodiment. It is possible to apply

[0207] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0208] This embodiment also provides the same effects as the twelfth embodiment. The voltage of the pure region 103a can be stabilized. The FFS type liquid crystal display device shown in the ninth embodiment and the FFS type liquid crystal display device shown in the fourth and fifth embodiments In each of the IPS liquid crystal display devices, a conductive film 170 similar to that of this embodiment is formed. Even in this case, the same effect as that of this embodiment can be obtained. The voltage of the pure region 103a can be stabilized. Even if the shapes of the electrode 112 and the opening pattern 112a are the same as those shown in the fourth embodiment, good.

[0209] (Fifteenth embodiment) FIG. 15(A) shows the configuration of an FFS-type liquid crystal display device according to a fifteenth embodiment of the present invention. Fig. 15(B) is a plan view for explanation, and Fig. 15(A) is a cross-sectional view taken along lines EF and GH. In this embodiment, the conductive film 170 is formed below the entire surface of the semiconductor film 103. The liquid crystal display according to this embodiment has the same configuration as that of the fourteenth embodiment except for the above. The manufacturing method of the device is substantially the same as that of the 14th embodiment. The same reference numerals are used for the components, and the description thereof will be omitted.

[0210] Therefore, the contents described in the second to fourteenth embodiments also apply to this embodiment. It is possible to apply

[0211] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0212] This embodiment can also provide the same effects as the fourteenth embodiment. The voltage of the pure region 103a can be stabilized. the FFS type liquid crystal display device shown in the first embodiment, and the IPS type liquid crystal display device shown in the fourth and fifth embodiments. In each of the liquid crystal display devices of the above modes, the conductive film 170 similar to that of this embodiment may be formed. Even in this case, the same effect as that of this embodiment can be obtained. For example, the impurity region In this embodiment, the voltage of the second electrode 103a can be stabilized. The shapes of the opening pattern 12 and the opening pattern 112a may be the shapes shown in the fourth embodiment.

[0213] (16th embodiment) FIG. 16A shows the configuration of an FFS type liquid crystal display device according to the 16th embodiment of the present invention. Fig. 16(B) is a plan view for explanation, showing a cross section taken along lines EF and GH of Fig. 16(A). In this embodiment, a second gate wiring 180 and a second gate The configuration is the same as that of the second embodiment except that electrodes 180a and 180b are formed. When viewed from a direction substantially perpendicular to the substrate 100, the second gate wiring 180 and the second The gate electrodes 180a and 180b are connected to the gate wiring 105 and the gate electrodes 105a and 105b, respectively. It roughly overlaps with 105b.

[0214] Furthermore, in the method for manufacturing the liquid crystal display device according to this embodiment, the second gate wiring 180 and the second Except that the gate electrodes 180a and 180b are formed in the same process as the first electrode 101. , which is substantially the same as the second embodiment. Therefore, the contents explained in the second embodiment are the same as those in this embodiment. In the following, the same components as those in the second embodiment will be denoted by the same reference numerals. and the explanation will be omitted.

[0215] Therefore, the contents described in the second to fifteenth embodiments also apply to this embodiment. It is possible to apply

[0216] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0217] This embodiment also provides the same effects as the second embodiment. The two channel regions 103c of the body film 103 are connected to the gate electrode 105a and the second gate electrode 105b. 180a, or is sandwiched between the gate electrode 105b and the second gate electrode 180b. Therefore, the channel area is essentially doubled, and the thin film transistor 121 The amount of current flowing through increases.

[0218] The FFS type liquid crystal displays shown in the third, sixth, seventh, ninth and twelfth embodiments and the IPS liquid crystal display devices shown in the fourth and fifth embodiments. Similarly to the present embodiment, the second gate wiring 180 and the second gate electrodes 180a and 180b are 0b may be formed in the same process as the first electrode 101. In this embodiment, the second electrode 112 and the opening The shape of the pattern 112a may be the shape shown in the fourth embodiment.

[0219] (17th embodiment) FIG. 17A shows the configuration of an FFS-type liquid crystal display device according to the seventeenth embodiment of the present invention. 17(B) is a cross-sectional view taken along line EF and line GH of FIG. In this embodiment, the gate wiring 105 is not formed, and the The gate electrodes 105a and 105b are electrically connected to the second gate wiring 180 via the connecting wiring 105c. This has the same configuration as the 16th embodiment except that it is electrically connected. The details described in the previous embodiment are also applicable to this embodiment. The gate electrodes 105a and 105b are formed in the same wiring layer.

[0220] Therefore, the contents described in the second to sixteenth embodiments also apply to this embodiment. It is possible to apply

[0221] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0222] The insulating film 102 and the gate insulating film 104 have a connecting portion located on the second gate wiring 180. A part of the connection wiring 105c is embedded in the connection hole. It is electrically connected to the second gate wiring 180 .

[0223] In addition, in the method for manufacturing the liquid crystal display device according to this embodiment, the connection wiring 105c is This is substantially the same as the second embodiment except that it is formed in the same process as 105a and 105b. Hereinafter, the same components as those in the second embodiment will be denoted by the same reference numerals, and the description thereof will be omitted. .

[0224] This embodiment also provides the same effects as the sixteenth embodiment. FFS-type liquid crystal display devices shown in the third, sixth, seventh, ninth and twelfth embodiments, and In the IPS type liquid crystal display devices shown in the fourth and fifth embodiments, Similarly to the embodiment, the second gate wiring 180 and the second gate electrodes 180a and 180b are connected to the first The electrode 101 is formed in the same process as the gate electrode 101, and the connection wiring 10 is formed without forming the gate wiring 105. 5c, the gate electrodes 105a and 105b are electrically connected to the second gate wiring 180. Even in this case, the same effect as in this embodiment can be obtained. In this embodiment, the shapes of the second electrode 112 and the opening pattern 112a are The shape shown in the embodiment may also be used.

[0225] (18th embodiment) FIG. 18A shows the configuration of an FFS-type liquid crystal display device according to the eighteenth embodiment of the present invention. 18(B) is a plan view for explaining the cross section of FIG. 18(A) taken along the lines EF and GH. In this embodiment, the thin film transistor 121 is a bottom gate type transistor. Except for one point, the configuration is the same as that of the second embodiment. The above content can also be applied to this embodiment. The same reference numerals are used for the other components, and the description thereof will be omitted.

[0226] Therefore, the contents described in the second to seventeenth embodiments also apply to this embodiment. It is possible to apply

[0227] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0228] In this embodiment, the gate electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring The line 105 is formed on the substrate 100, and the gate insulating film 104 is formed on the substrate 100, the gate The electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed on the respective The semiconductor film 103 is formed on a gate insulating film 104 .

[0229] The method for manufacturing the liquid crystal display device according to this embodiment is as follows. A first electrode 101 and an insulating film 102 are formed on the insulating film 102. Complete.

[0230] The conductive film may be made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), or the like. Mo, Tungsten (W), Neodymium (Nd), Chromium (Cr), Nickel ( One selected from the group consisting of platinum (Pt), gold (Au), and silver (Ag) A compound containing multiple elements, or one or multiple elements selected from the above group, or a combination of one or more elements selected from the above group with silicon It is formed from a compound (silicide). It is also formed from silicon (Si) doped with n-type impurities. may also be used.

[0231] Next, this conductive film is selectively removed by etching using a resist pattern. As a result, the gate electrodes 105a and 105b, the auxiliary wiring 106, The gate wiring 105 is then formed. After that, the resist pattern is removed. A gate insulating film 104 is formed.

[0232] Next, a semiconductor film is formed on the gate insulating film 104, and this semiconductor film is then patterned with a resist pattern. The semiconductor film 103 is formed by etching using a silicon dioxide film. After that, the resist pattern is removed.

[0233] Next, a resist pattern is formed on the semiconductor film 103, and this resist pattern is masked. As a result, impurities are implanted into the semiconductor film 103. b, and an impurity region located between the gate electrodes 105a and 105b. When the substrate 100 is made of a transparent material such as glass, the resist pattern When forming the gate, the gate wiring is exposed to the substrate as an exposure pattern without using an exposure mask. In some cases, a resist pattern is formed by exposing the substrate 100 from the back side. In this case, the number of steps can be reduced by the amount that an exposure mask is not used, and therefore manufacturing costs can be reduced. In addition, since the resist pattern can be formed in a self-aligned manner, there is no misalignment of the resist pattern. The advantage is that the deviation is suppressed and does not need to be considered. This is the same as the embodiment.

[0234] In this embodiment, the same effects as those of the second embodiment can be obtained. In the FFS or IPS liquid crystal display device shown in each of the four embodiments, The thin film transistor for driving the device is a bottom gate type thin film transistor having the same structure as that of this embodiment. In this embodiment, the second electrode 112 and the opening pattern The shape of the ring 112a may be the shape shown in the fourth embodiment.

[0235] (19th embodiment) FIG. 19(A) shows the configuration of an FFS-type liquid crystal display device according to the 19th embodiment of the present invention. 19(B) is a plan view for explaining the IJ cross section and the KL cross section of FIG. The liquid crystal display device according to this embodiment controls the second electrode 112 which serves as a pixel electrode. The difference is that the second interlayer insulating film 111 is not present, and the second electrode 1 12 and the first alignment film 113 are formed on the first interlayer insulating film 107; 108 and the connecting conductive film 109 are formed on the gate insulating film 104. The second embodiment is the same as the second embodiment except that the conductive film 110 is formed in the same layer as the second electrode 112. Hereinafter, the same components as those in the second embodiment will be denoted by the same reference numerals, and the explanation will be repeated. The details are omitted.

[0236] Therefore, the contents described in the second to eighteenth embodiments also apply to this embodiment. It is possible to apply

[0237] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0238] In this embodiment, the thin film transistor 122 is a bottom gate type, and the gate wiring 10 A gate insulating film 104 is formed on the gate insulating film 104. A channel region The semiconductor film 123 is formed of, for example, amorphous silicon. It is a membrane.

[0239] The semiconductor film 123 is electrically connected to the source wiring 108 via an n-type semiconductor film 124a. and is electrically connected to the connecting conductive film 109 via the n-type semiconductor film 124b. The n-type semiconductor films 124a and 124b are, for example, polysilicon films doped with phosphorus or arsenic. and functions as a source or a drain.

[0240] The method for manufacturing the liquid crystal display device according to this embodiment is as follows. A first electrode 101 and an insulating film 102 are formed on the insulating film 102. Complete.

[0241] The conductive film may be made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), or the like. Mo, Tungsten (W), Neodymium (Nd), Chromium (Cr), Nickel ( One selected from the group consisting of platinum (Pt), gold (Au), and silver (Ag) A compound containing multiple elements, or one or multiple elements selected from the above group, or a combination of one or more elements selected from the above group with silicon It is formed from a compound (silicide). It is also formed from silicon (Si) doped with n-type impurities. may also be used.

[0242] Next, this conductive film is selectively removed by etching using a resist pattern. As a result, the gate wiring 105 and the auxiliary wiring 106 are formed on the insulating film 102. After that, the resist pattern is removed, and then the gate insulating film 104 is formed.

[0243] Next, a semiconductor film is formed on the gate insulating film 104 by, for example, a CVD method. The film is selectively removed by etching using a resist pattern. A solid film 123 is formed, and then the resist pattern is removed.

[0244] Next, a semiconductor film is formed on the semiconductor film 123 and the gate insulating film 104. Then, n-type impurities are implanted into the semiconductor film. As a result, the n-type semiconductor film 124 is removed on the semiconductor film 123. a and 124b are formed. After that, the resist pattern is removed.

[0245] Next, the semiconductor film 123, the n-type semiconductor films 124a and 124b, the gate insulating film 104, and A conductive film is formed on each of them, and this conductive film is etched using a resist pattern. As a result, the source wiring 108 and the connecting conductive film 109 are formed. After that, the resist pattern is removed.

[0246] Next, a first interlayer insulating film 107 is formed. Next, a connecting layer is formed on the first interlayer insulating film 107. A contact hole is formed on the conductive film 109. In this step, the first interlayer insulating film 10 A contact hole located above the auxiliary wiring 106 is formed in the first interlayer insulating film 7 and the gate insulating film 104. The insulating film 107, the gate insulating film 104, and the insulating film 102 are provided with a first electrode 101. A contact hole is formed.

[0247] Next, a light-transmitting conductive film (e.g., a conductive film (ITO film, IZO film, ZnO film, or Si film) is formed on the substrate, and this conductive film is then This selectively removes the second electrode 112 and the connecting Next, a first interlayer insulating film 107, a second electrode 112, and The first alignment film 113 is formed on each of the connecting conductive films 110. The subsequent steps are the same as those of the second This is the same as the manufacturing method of the liquid crystal display device according to the embodiment.

[0248] This embodiment also provides the same effects as the second embodiment. The source wiring 108 and the connecting conductive film 109 are formed without forming the semiconductor films 124a and 124b. It may be directly connected to the semiconductor film 123. In addition, the shape of the opening pattern of the second electrode 112 may be , it may have the same shape as that of the fifth embodiment.

[0249] Furthermore, the FFS type liquid crystal display devices shown in the sixth to eighteenth embodiments and the fifth embodiment In each of the IPS type liquid crystal display devices shown in FIG. The structure of the transistor is changed so that the second interlayer insulating film 111 is not formed, and the second electrode 112 and the first wiring A counter film 113 is formed on the first interlayer insulating film 107, and a source wiring 108 and a connecting conductive film 10 9 is formed on the gate insulating film 104, and the connecting conductive film 110 is formed in the same layer as the second electrode 112. It may be formed.

[0250] (Twentieth embodiment) FIG. 20A shows the configuration of an FFS-type liquid crystal display device according to the twentieth embodiment of the present invention. 20(B) is a plan view for explaining the MN cross section and the OP cross section of FIG. In this embodiment, the connecting conductive film 110 is connected to the connecting conductive film 109 and the first electrode 10. 1 and the second electrode 112 is electrically connected to the auxiliary wiring 106. , and when viewed from a direction perpendicular to the substrate 100, the second electrode 112 is The structure is the same as that of the 19th embodiment except that the first electrode 1 protrudes outside the The electrode 101 functions as a pixel electrode, and the second electrode 112 functions as a common electrode.

[0251] The method for manufacturing the liquid crystal display device according to this embodiment is the same as that for manufacturing the liquid crystal display device according to the 19th embodiment. The manufacturing method is the same as that of the 19th embodiment. Therefore, the details explained in the 19th embodiment also apply to this embodiment. It can be used.

[0252] Therefore, the contents described in the second to nineteenth embodiments also apply to this embodiment. It is possible to apply

[0253] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0254] This embodiment also provides the same effects as the second embodiment. The source wiring 108 and the connecting conductive film 109 are formed without forming the semiconductor films 124a and 124b. It may be directly connected to the semiconductor film 123. In this embodiment, the opening of the second electrode 112 The shape of the mouth pattern may be the same as that in the fourth embodiment.

[0255] An opening pattern may also be formed in the first electrode 101. In this case, in the IPS system, The device controls the alignment direction of the liquid crystal. The shape and the shape of the opening pattern of these electrodes may be the same as that shown in the fourth embodiment, for example. It is in this state.

[0256] (21st embodiment) FIG. 21(A) shows the configuration of an FFS-type liquid crystal display device according to the 21st embodiment of the present invention. This cross-sectional view corresponds to the EF cross-section and the GH cross-section in FIG. In this embodiment, the second interlayer insulating film 111 shown in FIG. the second electrode 112 is located on the first interlayer insulating film 107; The third embodiment is the same as the third embodiment except that a part of the second electrode 112 is located on the connecting conductive film 110. It has the same configuration as the above.

[0257] In the method for manufacturing the liquid crystal display device according to this embodiment, the step of forming the second interlayer insulating film 111 is omitted. Therefore, the second embodiment is substantially the same as the third embodiment except that The contents can be applied to this embodiment as well. The same reference numerals are used for the parts, and the explanation will be omitted.

[0258] The second electrode 112 may be formed simultaneously with the source wiring 108. The electrodes may be formed by simultaneously processing the same material. This can eliminate the formation process and reduce costs.

[0259] Therefore, the second electrode 112 does not need to be optically transparent. 112 may have a light-reflecting property.

[0260] Therefore, the contents described in the second to twentieth embodiments also apply to this embodiment. It is possible to apply

[0261] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0262] This embodiment also provides the same effects as the third embodiment. Since the step of forming the interlayer insulating film 111 is omitted, the manufacturing cost can be reduced. Even with such a structure, the first electrode 10 is formed under the insulating film 102 that functions as a base film. 1 is arranged, the distance between the first electrode 101 and the second electrode 112 is made sufficiently large. A suitable electric field can be applied to the liquid crystal 114.

[0263] The FFS type liquid crystal display devices shown in the second and sixth to eighteenth embodiments and the fourth embodiment In the IPS type liquid crystal display devices shown in the first and second embodiments, Similarly, the second electrode 112 is formed on the first interlayer insulating film 107 without forming the second interlayer insulating film 111. The second electrode 112 may be disposed on the conductive film 110 for connection, with a portion of the second electrode 112 being located on the conductive film 110 for connection. In this case, the same effect as that of this embodiment can be obtained.

[0264] (Twenty-second embodiment) FIG. 21B shows the configuration of an FFS-type liquid crystal display device according to the 22nd embodiment of the present invention. This cross-sectional view corresponds to the EF cross-section and the GH cross-section in FIG. In this embodiment, the entire second electrode 112 is formed on the first interlayer insulating film 10. 7, and a part of the connecting conductive film 110 is located on the second electrode 112. Except for this, the configuration is the same as that of the 21st embodiment.

[0265] In the method for manufacturing the liquid crystal display device according to this embodiment, after the second electrode 112 is formed, Except that the wiring 108, the connecting conductive film 109, and the connecting conductive film 110 are formed, This is substantially the same as the 21st embodiment. Therefore, the contents described in the 21st embodiment are the same as those in this embodiment. The same components as those in the 21st embodiment will be described below. The same reference numerals are used and the explanations are omitted.

[0266] Therefore, the contents described in the second to twenty-first embodiments also apply to this embodiment. It is possible to apply

[0267] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0268] This embodiment also provides the same effects as the 21st embodiment. Since the connecting conductive film 110 is located on the second electrode 112, disconnection of the second electrode 112 is prevented. That is, as in the twenty-first embodiment, the second electrode 112 is a connecting conductor. When the conductive film 110 is formed on the second electrode 112, the conductive film 110 is formed thicker than the second electrode 112. Therefore, the second electrode 112 may be disconnected at the end of the connecting conductive film 110. On the other hand, as in this embodiment, the second electrode 112 is formed on the conductive film 110 for connection. If it is formed on the lower part, it is possible to prevent the second electrode 112 from being broken. Since the conductive film 110 is often formed thick, there is a risk that the connecting conductive film 110 may break. In addition, since the step of forming the second interlayer insulating film 111 is omitted, the manufacturing cost is reduced. Even with such a structure, the insulating film 102 that functions as a base film can be formed. Since the first electrode 101 is disposed below the second electrode 112, the first electrode 101 and the second electrode 112 The spacing can be made large enough to allow a suitable electric field to be applied to the liquid crystal 114 .

[0269] The FFS type liquid crystal display devices shown in the second and sixth to eighteenth embodiments and the fourth embodiment In the IPS type liquid crystal display devices shown in the first and second embodiments, Similarly, the second electrode 112 is formed on the first interlayer insulating film 107 without forming the second interlayer insulating film 111. In this embodiment, even if the connecting conductive film 110 is disposed on the second electrode 112, a part of the connecting conductive film 110 is positioned on the second electrode 112. The same effect can be obtained.

[0270] (Twenty-third embodiment) FIG. 22 shows the shape of an electrode of an FFS-type liquid crystal display device according to the 23rd embodiment of the present invention. This cross-sectional view corresponds to the EF cross-section and the GH cross-section in FIG. In this embodiment, a metal film 110a is formed on a second interlayer insulating film 111. The second electrode 112 and the connecting conductive film 110 are electrically connected via this metal film 110a. This is the same as the third embodiment except that the electrodes are electrically connected. The contents described in the previous section can also be applied to this embodiment. The same components are denoted by the same reference numerals and the description thereof will be omitted.

[0271] Therefore, the contents described in the second to twenty-second embodiments also apply to this embodiment. It is possible to apply

[0272] Also, I have used various diagrams to explain this, but each diagram is made up of various constituent elements. Therefore, from each diagram, regarding each constituent element, It is also possible to create a configuration consisting of:

[0273] A part of the metal film 110a is embedded in a contact hole formed in the second interlayer insulating film 111. As a result, the second electrode 112 is electrically connected to the connecting conductive film 110. A part of the second electrode 112 is made of gold. By being located on the metal film 110a, it is electrically connected to the metal film 110a.

[0274] In addition, in the method for manufacturing a liquid crystal display device according to this embodiment, a contact hole is formed in the second interlayer insulating film 111. Between the step of forming the first electrode 112 and the step of forming the second electrode 112, a step of forming a metal film 110a is performed. The metal film 110a is the second interlayer insulating film. A metal film is formed on 111 and in the contact hole, and this metal film is etched using a resist pattern. It is formed by selectively removing the film by etching.

[0275] This embodiment can also provide the same effects as the third embodiment.

[0276] In the IPS liquid crystal display device shown in the fourth embodiment, the metal film 110a In addition, the liquid crystal display of the FFS system explained in the second and sixth to eighteenth embodiments may be formed. In the liquid crystal display device of the IPS type described in the fifth embodiment, A metal film similar to the metal film 110a is provided above the connecting conductive film 109, and the connecting The interconnect conductive film 109 and the second electrode 112 may be electrically connected.

[0277] (Twenty-fourth embodiment) FIG. 23 shows the configuration of a pixel portion of an FFS-type liquid crystal display device according to a 24th embodiment of the present invention. The pixel portion of the liquid crystal display device according to this embodiment is formed on the counter substrate 12. No color filter is arranged on the 0 side, and a red color filter is arranged instead of the first interlayer insulating film 107. A blue color filter 130r, a green color filter 130g, and a blue color filter 130b are arranged. Except for this point, the configuration is substantially the same as that of the second embodiment. The contents explained in the 23rd embodiment can also be applied to this embodiment. The same components are denoted by the same reference numerals and the description thereof will be omitted. are located between the color filters 130r, 130b, and 130g and the semiconductor film 103, It also has the function of suppressing the diffusion of impurities from each color filter into the semiconductor film 103. It will have.

[0278] An insulating film made of an inorganic material is formed between the color filters and the gate electrodes 105a and 105b. As inorganic materials, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y :x>y), silicon oxynitride (SiN x O y : Insulating materials containing oxygen or nitrogen, such as x>y, can be used. To achieve locking, it is desirable to use a material that contains a lot of nitrogen.

[0279] The color of the color filter may be other than red, blue, and green, or may be more than three colors, for example, For example, four or six colors may be used, for example, yellow, cyan, magenta, and white may be added. In addition to the color filters, a black matrix may also be disposed.

[0280] In this way, by disposing a color filter on the substrate 100, the opposing substrate 120 and Since there is no need to precisely align the parts, it can be manufactured easily and the cost is low. This reduces the manufacturing cost and improves the manufacturing yield.

[0281] The method for manufacturing a liquid crystal display device according to this embodiment includes the steps of forming the first interlayer insulating film 107. Instead, the steps of forming color filters 130r, 130g, and 130b are included. , are the same as those in the second to twenty-third embodiments. g, 130b are steps of forming a color filter layer, applying a resist pattern on the color filter layer, A process of forming a pattern on a color filter layer using a resist pattern as a mask. This is formed by repeating the dry etching process three times. The color filter layers are formed using photosensitive materials and pigments. A space is created, but this space is filled with the second interlayer insulating film 111. Further, inorganic or organic materials are laminated on the surface. Alternatively, a black matrix or the like is laminated. In addition, color filters 130r, 130g, and 130b and a black matrix are formed on the substrate. The film can also be formed by using a droplet discharge method (for example, an ink-jet method).

[0282] This reduces the number of manufacturing steps for the liquid crystal display device. Since a color filter is provided on the opposing substrate, the Even if misalignment occurs between the opposing substrate, the aperture ratio can be prevented from decreasing. The margin for plate misalignment is increased.

[0283] FIG. 24(A) is a plan view of the liquid crystal display device shown in FIG. 23. As shown in FIG. As described above, the present liquid crystal display device includes a source line driving circuit, which is a peripheral driving circuit, around the pixel section 150. The source line driver circuit 152 and the gate line driver circuit 154 are provided. A red color filter 130r is provided on each of the light line driving circuits 154. By providing the color filter 130r, the source line driving circuit 152 and The active layer of the thin film transistor of the gate line driving circuit 154 is prevented from being photodegraded, and the gate line driving circuit 154 is kept flat. Efforts are being made to make the area smoother.

[0284] FIG. 24B is an enlarged view of a part (3×3 matrix) of the pixel section 150 of FIG. 24A. The pixel section 150 has a red color filter 130r and a blue color filter 130b. Green and red color filters 130g are alternately arranged in stripes. A red color filter 130r is disposed on the thin film transistor of the pixel.

[0285] In addition, the source wiring (not shown) and the gate wiring (not shown) are mutually connected to the color filters. Since they are arranged so as to overlap with the spaces between them, light leakage is suppressed.

[0286] In this way, the color filter 130r plays the role of a black matrix. It is also possible to omit the previously necessary step of forming a black matrix.

[0287] As described above, according to this embodiment, the same effects as those of the second to twenty-third embodiments can be obtained. In addition, the color filters 130r and 130r can be used instead of the first interlayer insulating film 107. b, 130g, the number of manufacturing steps for the liquid crystal display device can be reduced. Compared to when a color filter is provided on the opposing substrate, even if there is a positional misalignment between the opposing substrate, In other words, the margin for the positional deviation of the opposing substrate becomes large. do.

[0288] In FIG. 23, a capacitor is provided between the gate electrodes 105a and 105b and the source wiring 108. However, the present invention is not limited to this. It may be placed between

[0289] In addition to the color filters, a black matrix may also be disposed.

[0290] In addition, between the color filter and the source line 108, and between the color filter and the second electrode 11 An insulating film made of an inorganic material may be disposed between the insulating film 2 and the substrate 1. Examples of the inorganic material include silicon oxide (S iO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y :x>y), nitrogen Silicon oxide (SiN x O y :x>y) and other insulating materials containing oxygen or nitrogen are used. To block the intrusion of impurities, it is necessary to use a material that contains a lot of nitrogen. desirable.

[0291] In this way, by disposing a color filter or a black matrix under the second electrode 112, By doing so, the part that comes into contact with the liquid crystal and the alignment film can be made flat. This reduces the alignment disorder of the liquid crystal molecules, suppresses light leakage, and improves contrast. It is possible to do this.

[0292] In addition, the FFS or IPS liquid crystal display shown in the third to eighteenth and twenty-second embodiments In the device, as in the present embodiment, instead of the first interlayer insulating film 107 and the second interlayer insulating film 111, Instead, color filters 130r, 130b, and 130g may be provided. In this case, the same effect as in this embodiment can be obtained.

[0293] (Twenty-fifth embodiment) FIG. 25(A) shows the configuration of an FFS-type liquid crystal display device according to the 25th embodiment of the present invention. 25(B) is a plan view for explaining the configuration of the pixel portion of FIG. 25(A). In this embodiment, the layout of the color filters 130r, 130b, and 130g is Except for the output, the configuration is the same as that of the 24th embodiment. The above description can also be applied to this embodiment. The same reference numerals are used for the other components, and the description thereof will be omitted.

[0294] In this embodiment, the color filters 130r, 130b, and 130g are matrix filters for each pixel. Specifically, blue color filters 130b and green color filters 130c are arranged alternately. A red color filter 130r is provided to fill the gap of 30g. The source line driver circuit 152 and the gate line driver circuit 154, which are peripheral driver circuits, are also color-coded. Although a filter 130r is provided, the source line driving circuit 152 and the gate line driving circuit 1 A color filter 130r is also provided in the space between each of the electrodes 54 and the pixel section 150. This prevents spaces from being generated between the color filter layers.

[0295] This embodiment can also provide the same effects as the 24th embodiment. After forming the interlayer insulating film 107, the color filter 13 is formed instead of the second interlayer insulating film 111. In this case, the same effect as in this embodiment can be obtained. can be obtained.

[0296] Furthermore, the FFS or IPS liquid crystal display shown in the third to eighteenth and twenty-third embodiments In each device, the first interlayer insulating film 107 and the second interlayer insulating film 108 are formed in the same manner as in this embodiment. Instead of 11, color filters 130r, 130b, and 130g may be provided. In this case, the same effect as that of this embodiment can be obtained.

[0297] (Twenty-sixth embodiment) FIG. 26 is a diagram illustrating the configuration of an FFS-type liquid crystal display device according to a 26th embodiment of the present invention. In the liquid crystal display device according to this embodiment, instead of the first interlayer insulating film 107, 22 except that color filters 130r, 130b, and 130g are provided in the The color filters 130r, 130b, and The layout of 130g is the same as that shown in the 25th embodiment. The contents described in the 22nd embodiment and the 25th embodiment are the same as those described in the present embodiment. The following description will be made in conjunction with the same configuration as the 22nd embodiment and the 25th embodiment. The same components as those in the previous embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0298] In this embodiment, the same effects as those of the 25th embodiment can be obtained. In each of the FFS type liquid crystal display devices shown in the ninth to twenty-first embodiments, Similarly, instead of the first interlayer insulating film 107, color filters 130r, 130b, and 130r are used. In this case, the same effect as in this embodiment can be obtained.

[0299] The layout of the color filters 130r, 130b, and 130g is the same as that of the 23rd embodiment. The layout is not limited to that shown in the 25th embodiment, and may be a triangular mosaic arrangement, Various layouts are possible, such as RGBG four-pixel array, RGBW four-pixel array, etc. In these cases, a red color filter is placed above the active layer of the thin film transistor. It is desirable to place 130r.

[0300] (Twenty-seventh embodiment) 27(A) to 27(D) show the FFS mode liquid crystal display according to the 27th embodiment of the present invention. 1 is a plan view for explaining the shape of an electrode of a display device. Since the configuration is the same as that of the second embodiment except for the shape, the first electrode 101 and the second electrode All but the pole 112 are not shown.

[0301] In FIG. 27(A), the second electrode 112 has slit-shaped opening patterns 112d, 1 The opening patterns 112d and 112e are formed in plural. The opening pattern 112d is formed in the upper half of the second electrode 112 in the figure. In the figure, the opening pattern 112e is formed in the lower half of the second electrode 112. The angles are different.

[0302] In FIG. 27(B), the second electrodes 112 are shaped along the circumference and have different radii. The electrodes are arranged concentrically and connected to each other. The spaces in between act as an aperture pattern.

[0303] In FIG. 27(C), the second electrode 112 is made up of two comb-shaped electrodes arranged in opposite directions. The comb teeth are arranged so that the spaces between them are staggered. The base acts as an aperture pattern.

[0304] In FIG. 27(D), the second electrode 112 has a comb-like shape, and the comb-like portions are mutually spaced. The spaces between act as an aperture pattern.

[0305] In any case, the method for manufacturing the liquid crystal display device according to this embodiment is the same as that of the second embodiment. Therefore, the contents described in the second embodiment can also be applied to this embodiment. can.

[0306] This embodiment can also provide the same effects as the second embodiment. In each of the FFS-type liquid crystal display devices shown in the fourth to twenty-sixth embodiments, the second electrode The pole 112 may have any of the shapes shown in FIG.

[0307] (Twenty-eighth embodiment) 28(A) to 28(D) show IPS type liquid crystal displays according to the 28th embodiment of the present invention. FIG. 1 is a plan view for explaining the shape of the electrodes of a display device. The configuration is the same as that of the fourth embodiment except for the shape of the first electrode 112 and the second electrode 113. The illustration is omitted except for the first electrode 101 and the second electrode 112.

[0308] In FIG. 28(A), the opening pattern 101b of the first electrode 101 and the opening pattern 101b of the second electrode 11 The second opening pattern 112f has a wavy line shape. The area below and around the area where the opening pattern 112f is not formed in the second electrode 112 It is located in.

[0309] In FIG. 28(B), the first electrode 101 has a rectangular main body with a circular opening at the center. A turn 101c is provided, and the opening pattern 101c has a shape along the circumference and has a radius of 100. A plurality of different electrodes are arranged concentrically with the opening pattern 101c, and a shape along these circumferences is formed. Each electrode is connected to the main body by a single linear electrode. 112 has a circular opening pattern 112g in the center of the rectangular main body portion. In the opening 112g, an electrode having a shape along the circumference is arranged concentrically with the opening pattern 112g. The second electrode 112 has a shape in which the first electrode and the main body are connected by a linear electrode. The number of electrodes shaped along the circumference may be plural.

[0310] In addition, since the opening patterns 101c and 112g are concentric with each other, the first electrode 101 The electrode having a shape along the circumference of the first electrode 111 and the electrode having a shape along the circumference of the second electrode 112 are mutually The first electrode 101 has a circumferential shape, and the second electrode The electrodes 112 have a shape along the circumference, and because they have different radii, they are staggered and parallel. be.

[0311] In FIG. 28(C), the first electrode 101 is a plurality of linear electrodes extending vertically in the drawing. The upper and lower ends of the two are arranged parallel to each other, and are each formed into a straight line extending horizontally in the drawing. The second electrode 112 has a comb-like shape, and the comb-like portions are connected to the first electrode. The electrodes are located in the spaces between the linear electrodes that make up the first electrode 101.

[0312] In FIG. 28(D), the first electrode 101 and the second electrode 112 are each in a comb-like shape. The teeth are arranged in a staggered pattern. .

[0313] In any case, the method for manufacturing the liquid crystal display device according to this embodiment is the same as that of the fourth embodiment. Therefore, the contents described in the fourth embodiment can also be applied to this embodiment. can.

[0314] This embodiment also provides the same effects as the fourth embodiment. In the liquid crystal display device according to this embodiment, the shapes of the first electrode 101 and the second electrode 112 may be in any of the shapes shown in FIG.

[0315] (Twenty-ninth embodiment) FIG. 29 is a circuit diagram for explaining the circuit configuration of a liquid crystal display device according to a 29th embodiment of the present invention. In the liquid crystal display device according to this embodiment, a plurality of pixels are arranged in a matrix. Each pixel is configured such that a second auxiliary wiring 106a extending in the vertical direction in the drawing is formed. Except for the fact that the liquid crystal display device shown in the second to twenty-eighth embodiments has the same display screen as that of the liquid crystal display device shown in the second to twenty-eighth embodiments, Therefore, the contents described in the second to twenty-eighth embodiments are the same as those in this embodiment. In the following, the same components as those in the second to twenty-eighth embodiments will be The same reference numerals are used and the explanation is omitted.

[0316] The second auxiliary wiring 106a is formed in the same layer as the auxiliary wiring 106. and are electrically connected to auxiliary wiring 106 at each intersection.

[0317] The pixel also has a capacitance C s and capacity C ls of It has a capacity of C s The first electrode 101 and the second electrode 112 have an opening pattern. The capacitance is formed by the insulating film between the non-insulating film and the insulating film. Yes. Capacity C ls The opening pattern of the first electrode 101 overlaps with the opening pattern of the second electrode 112. The capacitance is formed by the part located above the part in contact with the capacitor. This increases the storage capacity.

[0318] This embodiment also provides the same effects as those of the second to twenty-eighth embodiments. By providing the second auxiliary wiring 106a, the potential of the common electrode in all pixels The liquid crystal display device according to this embodiment is an FFS type. The method may be either IPS or IPS.

[0319] (Thirtieth embodiment) 30 is a circuit diagram of a liquid crystal display device according to a 30th embodiment. The liquid crystal display device according to the present invention is an FFS or IPS liquid crystal display device, and one pixel Each sub-pixel is composed of a plurality of sub-pixels (for example, two). This has the same structure as any of the pixels of the liquid crystal display device shown in the embodiment. The contents explained in the second to twenty-eighth embodiments are also applicable to this embodiment. The same components as those in the twenty-eighth embodiment are designated by the same reference numerals and the description thereof will be omitted.

[0320] In the example shown in FIG. 30(A), a plurality of sub-pixels constituting the same pixel are The source wiring 108 and the auxiliary wiring 105 are electrically connected to each other and are different from each other. The source wiring 108 is electrically connected to the sub-pixels for one pixel column. The number of lines is the same as the number of lines (two in FIG. 30(A)). A signal can be transmitted.

[0321] In the example shown in FIG. 30(B), a plurality of sub-pixels constituting the same pixel are different from each other. The gate wiring 105 is electrically connected to the same auxiliary wiring 106. is doing.

[0322] Each sub-pixel has a capacitance C s and capacity C lsThese capacities are the 29th Since the configuration is the same as that of the embodiment, the description will be omitted.

[0323] According to this embodiment, it is possible to obtain the same effects as those of the second to twenty-eighth embodiments. Since one pixel is made up of multiple sub-pixels, the viewing angle can be further widened. The effect of allowing pixels to have redundancy and enabling area gradation display. The following effect can also be obtained.

[0324] (Thirty-first embodiment) 31, 32, and 33, a manufacturing method of a liquid crystal display device according to a 31st embodiment will be described. This embodiment is a liquid crystal display having the structure shown in the third embodiment. This is an example of a method for manufacturing a device. By using this manufacturing method, the common electrode and the pixel electrode The degree of freedom in the spacing between the pixel electrodes and the spacing between the opening patterns is improved. The optimum width varies depending on the distance between the pixel electrode and the common electrode. The size, width and spacing of the electrodes can be freely set. It is now possible to control the gradient, for example by increasing the electric field parallel to the substrate. That is, in a display device using a liquid crystal, the The liquid crystal molecules, which are oriented in a homogeneous direction, can be controlled in a direction parallel to the substrate. Therefore, applying an optimal electric field widens the viewing angle. Although the interlayer insulating film has a single layer structure in the above, it may have a two layer structure.

[0325] First, as shown in FIG. 31(A), a conductive film having optical transparency is formed on a substrate 800. The substrate 800 may be a glass substrate, a quartz substrate, a substrate made of an insulating material such as alumina, or a substrate made of a material that is suitable for a post-process. A plastic substrate, silicon substrate, or metal plate that is heat-resistant and can withstand the processing temperature of The substrate 800 is a metal such as stainless steel or a semiconductor substrate having silicon oxide on the surface. The substrate 800 may be a substrate on which an insulating film such as silicon or silicon nitride is formed. When using a black substrate, PC (polycarbonate), PES (polyethersulfone) , PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) It is preferable to use a material having a relatively high glass transition point such as

[0326] The conductive film may be, for example, an ITO film, or an indium tin oxide film or an indium oxide film containing Si elements. IZO (Indium Zinc Oxide) is a mixture of indium and 2 to 20 wt% zinc oxide (ZnO). c Oxide) membrane.

[0327] Next, a photoresist film is formed on the conductive film, and the photoresist film is exposed and This forms a resist pattern on the conductive film. The conductive film is etched using the pattern as a mask. A first electrode 801, which is a pixel electrode, is formed. Thereafter, the resist pattern is removed.

[0328] Next, an insulating film 802 is formed on the first electrode 801 and the substrate 800. 2 is, for example, silicon nitride (SiN X ) film, a silicon oxide film (SiO X ) laminated However, other insulators (e.g., silicon oxynitride (SiO X N y )(x>y) or nitride Silicon oxide (SiN X O y )(x>y)).

[0329] Here, a highly dense film is formed on the surface of the insulating film 802 made of a silicon oxide film, a silicon oxynitride film, or the like. By performing nitriding treatment using plasma, a nitride film is formed on the surface of the insulating film 802. Good too.

[0330] High density plasma is generated by using microwaves of, for example, 2.45 GHz. , electron density is 1×10 11 ~1×10 13 / cm 3 And the electron temperature is 2 eV or less, and the ion energy Such a high-density plasma has a kinetic energy of activated species. It has low energy and less plasma damage compared to conventional plasma treatment, resulting in fewer defects. A film with little damage can be formed. The distance at this point is set to 20 to 80 mm, preferably 20 to 60 mm.

[0331] Nitrogen atmosphere, for example, an atmosphere containing nitrogen and a rare gas, or an atmosphere containing nitrogen, hydrogen and a rare gas The high-density plasma treatment is carried out under atmospheric conditions or under an atmosphere containing ammonia and a rare gas. By this process, the surface of the insulating film 802 can be nitrided. The diffusion of impurities can be suppressed, and the high-density plasma treatment described above can form an extremely thin Since the semiconductor film can be formed on the insulating film, the influence of stress on the semiconductor film formed thereon can be reduced.

[0332] Next, as shown in FIG. 31(B), a crystalline semiconductor film (for example, poly As a method for forming a crystalline semiconductor film, a method for directly bonding the crystalline semiconductor film on the insulating film 802 is used. A method for forming a crystalline semiconductor film and a method for forming an amorphous semiconductor film on an insulating film 802 A method of crystallizing the mixture is mentioned.

[0333] The amorphous semiconductor film can be crystallized by irradiating it with laser light, or by irradiating it with a thin film of the semiconductor film. Crystallization is achieved by heating using elements that promote crystallization (for example, metallic elements such as nickel). or a method of crystallizing a semiconductor film by heating it using an element that promotes crystallization of the semiconductor film, and then Of course, it is possible to use a method of irradiating the amorphous semiconductor without using the above elements. A method of thermally crystallizing the film can also be used. However, if the substrate is a quartz substrate or a silicon wafer, It is limited to those that can withstand high temperatures.

[0334] When using laser irradiation, continuous wave laser beam (CW laser beam) or pulsed laser A pulsed laser beam can be used. The laser beams that can be used are Ar laser, Kr laser, excimer laser, etc. Which gas laser, single crystal YAG, YVO4, forsterite (Mg2SiO4), YAlO 3、 GdVO4 or polycrystalline (ceramic) YAG, Y2O3, YVO4 , YAlO3, GdVO4, with Nd, Yb, Cr, Ti, Ho, Er as dopants, Lasers with one or more of Tm and Ta added as a medium, glass lasers Laser, Ruby Laser, Alexandrite Laser, Ti:Sapphire Laser, Copper Examples include lasers generated by one or more of the following: a vapor laser or a gold vapor laser. The fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves are By irradiating a harmonic laser beam, large crystal grains can be obtained. d: YVO4 laser (fundamental wave 1064 nm) second harmonic (532 nm) and third harmonic (355 nm) can be used. In this case, the laser energy density is 0.01 to 100MW / cm 2 (preferably 0.1 to 10 MW / cm 2 ) is required, and The scanning speed is set to about 10 to 2000 cm / sec.

[0335] In addition, single crystal YAG, YVO4, forsterite (Mg2SiO4), YAlO3 , GdVO4, or polycrystalline (ceramic) YAG, Y2O3, YVO4, YAlO 3. GdVO4 with Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as dopants Lasers that use one or more of the above as a medium, Ar ion lasers , or Ti:sapphire lasers can be made to oscillate continuously and can be Q-switched. By performing pulse oscillation at frequencies above 10 MHz, it is possible to achieve high-speed pulse oscillation. When a laser beam is oscillated at an oscillation frequency of 10 MHz or more, Between the time when the semiconductor film is melted by the laser and the time when it solidifies, the next pulse Therefore, unlike the case of using a pulsed laser with a low oscillation frequency, Since the solid-liquid interface can be moved continuously in the scanning direction, It is possible to obtain crystal grains that have grown to a high degree.

[0336] If ceramic (polycrystalline) is used as the medium, it is possible to form the medium into any shape in a short time and at low cost. When using a single crystal, it is usually possible to form a crystal with a diameter of several mm and a length of several tens of mm. Cylindrical media are used, but larger ones can be made using ceramics. It is possible to do this.

[0337] The concentration of dopants such as Nd and Yb in the medium that directly contribute to light emission varies depending on the crystal structure, both in single crystals and polycrystals. Since the concentration cannot be changed significantly even in the crystal, increasing the concentration can improve the laser output. However, in the case of ceramics, the size of the medium is smaller than that of a single crystal. This can significantly increase the power output, which is expected to be a major improvement.

[0338] Furthermore, in the case of ceramics, parallelepiped or rectangular parallelepiped media can be easily formed. By using a medium with such a shape, it is possible to make the oscillating light propagate in a zigzag pattern inside the medium. This allows for a longer oscillation path, resulting in greater amplification and higher output. In addition, the laser beam emitted from the medium with this shape can be The cross section of the beam is square when it is emitted, so it has a linear beam shape compared to a round beam. The laser beam emitted in this way can be shaped using an optical system. By doing so, it is possible to easily create a linear beam with a short side length of 1 mm or less and a long side length of several mm to several meters. Furthermore, by irradiating the medium with excitation light uniformly, a linear beam can be obtained. The energy distribution is uniform in the longitudinal direction.

[0339] By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. If uniform annealing is required to both ends of the linear beam, Some ingenuity will be required, such as placing slits on both ends to block the areas where energy is attenuated.

[0340] The resulting linear beam with uniform intensity is used to anneal the semiconductor film. When an electronic device is manufactured using a semiconductor film, the characteristics of the electronic device are good and uniform.

[0341] As a method of crystallizing an amorphous semiconductor film by heating using an element that promotes crystallization, The technique described in Japanese Patent Laid-Open No. 8-78329 can be used. A metal that promotes crystallization in amorphous semiconductor films (also called amorphous silicon films) By adding an element and performing heat treatment, the amorphous semiconductor film is crystallized starting from the added region. This is what is done.

[0342] Moreover, by irradiating the amorphous semiconductor film with strong light instead of heat treatment, the amorphous semiconductor film is crystallized. In this case, infrared light, visible light, or ultraviolet light or any one of them may be used. Although a combination can be used, typically halogen lamps, metal halide lamps, etc. lamp, xenon arc lamp, carbon arc lamp, high pressure sodium lamp, or Light emitted from a high-pressure mercury lamp is used. The lamp light source is turned on for 1 to 60 seconds, preferably 30 to 60 seconds. The lamp is turned on for 60 seconds, and this is repeated 1 to 10 times, preferably 2 to 6 times. The intensity is arbitrary, but the semiconductor film is instantaneously heated to about 600 to 1000°C. If necessary, the amorphous semiconductor having an amorphous structure may be formed before irradiation with strong light. Alternatively, a heat treatment may be performed to release hydrogen contained in the film. Crystallization may be achieved by carrying out both.

[0343] After heat treatment, the crystallization rate of the crystalline semiconductor film (the proportion of crystalline components in the total volume of the film) is increased. In order to repair defects remaining in the crystal grains, a laser beam is irradiated onto the crystalline semiconductor film in the atmosphere. Alternatively, irradiation may be performed in an oxygen atmosphere. The laser light may be any of those described above. It is possible.

[0344] It is also necessary to remove the added elements from the crystalline semiconductor film, and the method for doing so is as follows: First, the surface of the crystalline semiconductor film is treated with an ozone-containing aqueous solution (typically ozone water). By processing, an oxide film (called chemical oxide) is formed on the surface of the crystalline semiconductor film. The barrier layer is formed to a thickness of 1 nm to 10 nm. It functions as an etching stopper when selectively removing only the ring layer.

[0345] Next, a gettering layer containing a rare gas element is formed on the barrier layer as a gettering site. Here, a semiconductor film containing a rare gas element is formed by a CVD method or a sputtering method. When forming the gettering layer, the rare gas element is used as a getter. The sputtering conditions are adjusted appropriately so that the rare gas element is added to the ring layer. Helium (He), Neon (Ne), Argon (Ar), Krypton (Kr), Xenon (Xe) or a plurality of species selected from the group consisting of

[0346] In addition, when a source gas containing phosphorus, which is an impurity element, is used or a target containing phosphorus is used, When a gettering layer is formed using rare gas elements, in addition to gettering by rare gas elements, Gettering can be performed by utilizing the Ron force. (e.g. nickel) tends to migrate to areas with high oxygen concentration, so gettering The oxygen concentration in the layer is, for example, 5×1018 cm -3 It is desirable to have more than this.

[0347] The crystalline semiconductor film, the barrier layer, and the gettering layer are then subjected to a heat treatment (e.g., a heat treatment or is a process of irradiating the surface with strong light) to getter metal elements (e.g., nickel), The metal element in the crystalline semiconductor film is reduced in concentration or removed.

[0348] Next, a known etching method is carried out using the barrier layer as an etching stopper, and gettering is performed. Then, the barrier layer made of an oxide film is selectively removed by using a solution containing, for example, hydrofluoric acid. It is removed by an etchant.

[0349] Here, even if impurity ions are doped in consideration of the threshold characteristics of the TFT to be fabricated, good.

[0350] Next, a photoresist film (not shown) is applied onto the crystalline semiconductor film by a coating method. The photoresist film is exposed and developed. The coating method is spin coating, spraying, These methods include thin printing and painting. By using these methods, a resist is formed on the crystalline semiconductor film. Next, a resist pattern is formed on the crystalline semiconductor film using this resist pattern as a mask. As a result, a crystalline semiconductor film 803 is formed on the insulating film 802. do.

[0351] Next, the surface of the crystalline semiconductor film 803 is washed with an etchant containing hydrofluoric acid, and then A gate insulating film 804 is formed on the crystalline semiconductor film 803 to a thickness of 10 nm to 200 nm. The gate insulating film 804 is an insulating film mainly composed of silicon, such as a silicon oxide film or silicon nitride film. It is made of silicon film, silicon oxynitride film, silicon nitride oxide film, etc. The gate insulating film 804 is also formed on the insulating film 802. .

[0352] Next, as shown in FIG. 31(C), after cleaning the gate insulating film 804, A first conductive film and a second conductive film are formed in this order on the substrate 804. The first conductive film is, for example, The first conductive film is a tungsten film, and the second conductive film is a tantalum nitride film.

[0353] Next, a photoresist film (not shown) is applied onto the second conductive film. The resist film is exposed and developed, thereby forming a resist pattern on the second conductive film. Next, using this resist pattern as a mask, the first conductive film and the second conductive film are formed. The first conductive film is etched under the first condition, and the second conductive film is etched under the second condition. As a result, first gate electrodes 805a and 805b and a second gate electrode 805c are formed on the crystalline semiconductor film 803. The first gate electrodes 806a and 806b are formed. The second gate electrode 806a is located on the first gate electrode 805a. The second gate electrode 806b is located on the first gate electrode 805b. The inclination angles of the side surfaces of the first gate electrodes 805a and 805b are 06bThe angle of inclination of each side is gentler than that of the other.

[0354] Furthermore, this etching process forms a first wiring 807 and a second wiring 808 near the first electrode 801. Then, a second wiring 808 is formed on the first wiring 807. The electrodes and the wiring are routed so that the corners are rounded when viewed from a direction perpendicular to the substrate 800. It is preferable to round the corners to prevent dust and other particles from remaining on the corners of the wiring. This reduces defects caused by dust and improves yield. The photoresist film is removed.

[0355] Next, as shown in FIG. 31(D), the first gate electrodes 805a and 805b and the second gate electrodes 805a and 805b are The gate electrodes 806a and 806b are used as masks to form a first conductivity type ( For example, n-type impurity elements 809 (for example, phosphorus) are implanted. First impurity regions 810a, 810b, and 810c are formed in the film 803. The impurity region 810a is located in a region that will become the source of the thin film transistor, and the first impurity The first impurity region 810c is located in a region that will become the drain of the thin film transistor. The material region 810b is located between the first gate electrodes 805a and 805b.

[0356] Next, as shown in FIG. 31(E), the first gate electrodes 805a and 805b and the second gate A photoresist film is applied to cover the front electrodes 806a and 806b. The photoresist film is exposed and developed, thereby forming the first gate electrode 805a and the second gate electrode 805b. The upper surface and periphery of each of the first gate electrodes 805b and the second gate electrodes 806a, The upper surface and periphery of each of the gate electrodes 806b are formed with resist patterns 812a and 812b. Then, using the resist patterns 812a and 812b as a mask, A first conductivity type impurity element 811 (for example, phosphorus) is implanted into the semiconductor film 803. A portion of each of the first impurity regions 810a, 810b, and 810c contains impurities of the first conductivity type. The impurity element 811 is again implanted to form second impurity regions 813a, 813b, and 813c. The remaining portions of the first impurity regions 810a, 810b, and 810c are These remain as third impurity regions 814a, 814b, 814c, and 814d.

[0357] Thereafter, as shown in FIG. 32(A), the resist patterns 812a and 812b are removed. Next, an insulating film (not shown) is formed to cover almost the entire surface. It is a silicon film formed by plasma CVD.

[0358] Next, the crystalline semiconductor film 803 is subjected to heat treatment to activate the impurity elements added thereto. This heat treatment is performed by rapid thermal annealing (RTA) using a lamp light source. Alternatively, a method of irradiating a YAG laser or an excimer laser from the rear side, or a method of using a furnace These methods are heat treatments, or treatments that combine a plurality of these methods.

[0359] The above-mentioned heat treatment activates the impurity elements and simultaneously solidifies the crystalline semiconductor film 803. The element used as a catalyst during crystallization (for example, a metal element such as nickel) is a highly concentrated impurity. The second impurity regions 813a, 813b, and 813c contain impurities (e.g., phosphorus) for gettering. The nickel concentration in the portion of the crystalline semiconductor film 803 that mainly becomes the channel formation region is As a result, the crystallinity of the channel forming region improves. The value is reduced and high field effect mobility is obtained. TFT is obtained.

[0360] Next, an insulating film 815 is formed so as to cover the crystalline semiconductor film 803. is, for example, a silicon nitride film, and is formed by plasma CVD. On the insulating film 815, a planarization film is formed to become an interlayer insulating film 816. The insulating film 816 is made of: Translucent inorganic materials (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.) , photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide a amide, resist or benzocyclobutene), or a laminate of these. Another example of a film having light-transmitting properties that can be used as a planarization film is a film containing an alkyl group obtained by a coating method. Insulating films made of SiOx films containing, for example, silica glass, alkylsiloxane polymers, Alkylsilsesquioxane polymers, hydrogenated silsesquioxane polymers, hydrogenated alkylsilsesquioxane polymers An insulating film formed using a silsesquioxane polymer or the like can be used. Examples of hydroxylase polymers include PSB-K1 and PSB -K31 and ZRS-5PH, a coating insulating film material made by Catalyst Chemicals. The film 16 may be a single layer film or a multilayer film.

[0361] Next, a photoresist film (not shown) is applied onto the interlayer insulating film 816, and this photoresist The resist film is exposed and developed, and a resist pattern is formed on the interlayer insulating film 816. Next, using this resist pattern as a mask, an interlayer insulating film 816 and an insulating film 8 15 and the gate insulating film 804 are etched. The film 815 and the gate insulating film 804 are provided with connection holes 817a, 817b, 817c, and 817d. The contact hole 817a is connected to the second impurity region 81d, which is the source of the transistor. 3a, and the contact hole 817b is the drain of the transistor. The contact hole 817c is located on the first electrode 801. The contact hole 817d is located on the second wiring 808. After that, the resist pattern is removed. do.

[0362] Next, as shown in FIG. 32(B), the connection holes 817a, 817b, 817c, and 817d A first conductive film 818 is formed in each of the layers and on the interlayer insulating film 816. The film 818 is a light-transmitting conductive film, for example, an ITO film or an indium tin film containing Si elements. Oxide or indium oxide mixed with 2 to 20 wt% zinc oxide (ZnO) The IZO (Indium Zinc Oxide) film was formed using a PET film. Then, a second conductive film 819 is formed on the first conductive film 818. The second conductive film 819 is, for example, For example, it is a metal film.

[0363] Next, a photoresist film 820 is applied onto the second conductive film 819. A reticle 840 is placed above the resist film 820. The reticle 840 is a glass substrate. Semipermeable membrane patterns 842a, 842b, 842c, and 842d are formed on the A light-shielding pattern 84 is formed on a part of each of the turns 842a, 842b, 842c, and 842d. The semi-permeable film pattern 842a and the light-shielding pattern 841b are formed. The pattern 841a is located above the connection hole 817a, and the semi-permeable film pattern 842b and the light-shielding pattern The filter 841b is located above the connection holes 817b and 817c, and the semipermeable membrane pattern 842 The semi-permeable membrane pattern 842d and the light-shielding pattern 841c are located above the connection hole 817d. is located above the first electrode 801.

[0364] Next, the photoresist film 820 is exposed to light using the reticle 840 as a mask. As a result, the photoresist film 820 is formed under the light-shielding patterns 841a, 841b, and 841c. The semi-permeable membrane patterns 842a, 842b, 842c, 842d and the light-shielding patterns The second conductive film 8 is located below the area where the electrodes 841a, 841b, and 841c do not overlap. The area is exposed to light except for the lower layer portion located near 19. They are numbered 821a, 821b, 821c, and 821d.

[0365] Next, as shown in FIG. 32(C), the photoresist film 820 is developed. The exposed portion of the photoresist film 820 is removed, forming a resist pattern 822. The resist pattern 822a is formed with the contact holes 8 The resist pattern 822b is located above the contact hole 817b and the contact hole 817a. 7c and between them. The resist pattern 822d is located above and around the hole 817d. The resist pattern 822c is located above the contact hole 817d. The other portions and the resist pattern 822d are thinner than the other resist patterns.

[0366] Next, as shown in FIG. 32(D), resist patterns 822a, 822b, and 822c are formed. , 822d are used as a mask to etch the first conductive film 818 and the second conductive film 819. As a result, the resist patterns 822a, 822b, 822c, and 822d are covered with The first conductive film 818 and the second conductive film 819 are removed from the non-existent region.

[0367] Moreover, the resist patterns 822a, 822b, 822c, and 822d are also gradually etched. Therefore, during the etching process, the thin part of the resist pattern (specifically, the resist The portion of the pattern 822c other than the portion above the contact hole 817d and the resist pattern 822 Therefore, the resist pattern 822c is removed from above the contact hole 817d. In the other portions and the regions located under the resist patterns 822d, the second conductive The film 819 is removed, leaving only the first conductive film 818. Then, a resist pattern 822 a, 822b, and 822c are removed.

[0368] In this way, the source is formed by one resist pattern and one etching process. Wirings 823a, 824a, drain wirings 823b, 824b, connecting conductive film 824c, and A second electrode 828, which is a common electrode, is formed. The drain wirings 823b and 824b are connected to the impurity regions and gate electrodes formed in the crystalline semiconductor film 803. a gate insulating film 804, first gate electrodes 805a and 805b, and a second gate electrode 806 a and 806b form a thin film transistor 825. 3b and 824b electrically connect the impurity region 813c serving as the drain and the first electrode 801. The second electrode 828 is partially embedded in the connection hole 817d, The connecting conductive film 824c is electrically connected to the second wiring 808. The second electrode 828 is located on the second electrode 828.

[0369] Then, the first alignment film 826 is formed. In this way, the active matrix substrate By the processes shown in FIGS. 31 and 32, the liquid crystal display device shown in FIG. The gate signal line driving circuit region 854 of the device also includes thin film transistors 827 and 829 (FIG. 33( 31(B)) is formed. Also, by the processing shown in FIG. 31(B) to (D), the active The first terminal electrode 838a and the second terminal electrode 838b connect the matrix substrate to the outside. b (shown in FIG. 33(B)) is formed.

[0370] Thereafter, as shown in the plan view of FIG. 33(A) and the KL cross section of FIG. 33(B), An organic resin film such as an acrylic resin film is formed on a positive matrix substrate. This is selectively removed by etching using a resist pattern. A columnar spacer 833 is formed on the trix substrate. After forming the cooling material 834, liquid crystal is dropped onto the active matrix substrate. Before this, a protective film may be formed on the sealant to prevent the sealant from reacting with the liquid crystal. .

[0371] Then, a color filter 832 and a second The opposing substrate 830 on which the alignment film 831 is formed is disposed, and these two substrates are bound by a sealing material 83 At this time, the spacer 833 is used to separate the active matrix substrate. The facing substrates 830 are attached together with a uniform gap. Then, a sealing material (not shown) is applied. In this way, the gap between the active matrix substrate and the A liquid crystal is sealed between the substrates.

[0372] Next, if necessary, the active matrix substrate or the counter substrate or both substrates Then, polarizing plates 835a and 835b are provided. Flexible Printed Circuit (FP) C) 837 is disposed in the external terminal connection region 852 via the anisotropic conductive film 836. The second terminal electrode 838b is connected to the second terminal electrode 838a.

[0373] The structure of the liquid crystal module thus formed will be described below. A pixel region 856 is disposed in the center of the substrate. In FIG. 33A, a gate electrode is formed above and below the pixel region 856. A gate signal line driving circuit region 854 for driving the signal lines is arranged. The area between the area 856 and the FPC 837 is where the source signal line is driven. The gate signal line driving circuit region 857 is arranged on one side. The layout of only the LCD panel may be selected by the designer in consideration of the size of the LCD panel. However, in consideration of the operational reliability and driving efficiency of the circuit, it is preferable to select The signal input to each driver circuit is FPC837 It will be held from

[0374] This embodiment can also achieve the same effects as the third embodiment.

[0375] (Thirty-second embodiment) The liquid crystal display module according to the 32nd embodiment will be described with reference to FIGS. 34 and 35. In each figure, the configuration of the pixel section 930 is the same as that of the pixel region shown in the 31st embodiment. The configuration is similar to that of 856, and a plurality of pixels are formed on a substrate 100.

[0376] FIG. 34(A) is a schematic plan view of a liquid crystal display module, and FIG. 34(B) is a schematic plan view of a source driver. 34A is a diagram for explaining the circuit configuration of the buffer 910. In the example shown in FIG. In this way, both the gate driver 920 and the source driver 910 are connected to the same The source driver 910 is integrally formed on the substrate 100. In this way, the input video signal is transmitted to one of the source signal lines. a thin film transistor 912 and a shift register 91 for controlling the thin film transistors 912; 1 and has.

[0377] FIG. 35(A) is a schematic plan view of a liquid crystal display module, and FIG. 35(B) is a schematic plan view of a source driver. 35A is a diagram for explaining the circuit configuration of the The source driver is a thin film transistor group 940 formed on the substrate 100 and a The IC 950 and the thin film transistor group 940 are For example, they are electrically connected using FPC960.

[0378] The IC950 is formed using, for example, a single crystal silicon substrate, and includes a thin film transistor (TFT) The thin film transistors 940 are controlled and video signals are input to the thin film transistors 940. The register group 940 selects which of the source signal lines to transmit video signals to based on a control signal from the IC 950. Controls whether to transmit the audio signal.

[0379] The liquid crystal display module according to the 32nd embodiment also has the same effect as the third embodiment. can be obtained.

[0380] (Thirty-third embodiment) 38(A) and (B) are cross-sectional views for explaining the structure of a light-emitting device using the present invention. In this embodiment, the configuration of the present invention is combined with a self-luminous element (such as an EL element). Here is an example.

[0381] FIG. 38(A) shows an example of a light-emitting device in which the configuration of the present invention is combined with a thin-film EL element. Thin-film EL elements have a light-emitting layer made of a thin film of a light-emitting material, and emit light accelerated by a high electric field. Light emission is obtained by collision excitation of the luminescent center or the host material by the trapped electrons.

[0382] The mechanism of light emission is donor-acceptor coupling, which utilizes the donor and acceptor levels. Two types of luminescence are known: one is the adsorbate recombination type, and the other is the localized luminescence, which utilizes the inner-shell electron transition of metal ions. Generally, thin-film EL devices emit localized light, while dispersed EL devices emit donor-acceptor light. - Recombination type emission is often the case.

[0383] The specific structure is shown below. FIG. 38(A) shows a top-gate thin film transistor 221 In terms of using the first electrode 201 and the second electrode 212, The structure is similar to that of the liquid crystal display device according to the first embodiment. A first electrode 201 is formed, and an insulating film 202 is formed on the substrate 200 and the first electrode 201. A thin film transistor 221 is formed on the insulating film 202. Interlayer insulating films 206 and 207 are formed on the capacitor 221, and a second electrode is formed on the interlayer insulating film 207. The second electrode 212 is formed with a slit. The first electrode 201 may also have a slit formed therein. Above the pole 212 is a layer 214 containing a light-emitting material.

[0384] The substrate 200, the first electrode 201, the insulating film 202, and the A thin film transistor 221, interlayer insulating films 206 and 207, and a second electrode 212 are formed. Next, a dielectric 213 is formed on the second electrode 212, and a layer containing a light-emitting material is formed on the dielectric 213. However, it is not limited to the above-mentioned configuration, and the dielectric 213 does not necessarily have to be provided. If the dielectric 213 is not formed, the interlayer insulating films 206 and 207 serve as the dielectric. A second substrate 214 is formed on the layer 214 containing the light-emitting material via a protective layer 215. Place 220.

[0385] The luminescent material consists of a host material and a luminescent center. Manganese ( Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), Thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr ) can be used. For charge compensation, fluorine (F), chlorine (Cl), etc. The halogen element may be added.

[0386] The first inclusion that forms the donor level serves as the luminescence center for donor-acceptor recombination luminescence. Use of a light-emitting material containing a pure element and a second impurity element that forms an acceptor level The first impurity element can be, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like. The second impurity element may be, for example, copper (Cu), Silver (Ag) or the like can be used.

[0387] The base material used for the light-emitting material may be a sulfide, an oxide, or a nitride. Examples of sulfides include zinc sulfide (ZnS), cadmium sulfide (CdS), and calcium sulfide. CaS, yttrium sulfide (Y2S3), gallium sulfide (Ga2S3), sulfur Strontium (SrS), barium sulfide (BaS), etc. can be used, and as oxides For example, zinc oxide (ZnO), yttrium oxide (Y2O3), etc. can be used. do.

[0388] Furthermore, examples of nitrides include aluminum nitride (AlN) and gallium nitride (GaN ), indium nitride (InN), etc. can be used. Furthermore, zinc selenide (ZnS e), zinc telluride (ZnTe), etc. can also be used, and calcium gallium sulfide (C aGa2S4), strontium gallium sulfide (SrGa2S4), barium gallium sulfide The luminescent material may be a ternary mixed crystal such as BaGa2S4. The light-emitting material can be made by appropriately combining the cores.

[0389] Thin-film EL devices emit localized light, while dispersed EL devices emit donor-acceptor recombination light. In the case of the configuration of Figure 38(A), a light emitting center that becomes a localized light is used. It is preferable to use a light-emitting material (for example, ZnS:Mn, ZnS:Cu,Cl, etc.) as the material.

[0390] Next, FIG. 38(B) shows a light-emitting device that combines the configuration of the present invention with a dispersed EL element. Here is an example: A dispersion type EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. As with thin-film EL devices, electrons accelerated by a high electric field emit light from the luminescent center or host material. In the case of a dispersion type EL element, the second electrode 212 is connected to the As a result, a layer 224 containing a light emitting material is provided.

[0391] The light-emitting material dispersed in the binder is the same as that of the thin-film EL element. In the case of a dispersion type EL element, the donor-acceptor recombination The luminescent material (e.g., ZnS:Ag,Cl, ZnS:Cu) is prepared using the luminescent center that results in combined luminescence. The luminescent material is not limited to the inorganic materials mentioned above, but may be an organic material. It is also possible to use a light-emitting material (e.g., rubrene, 9,10-diphenylanthracene, etc.) good.

[0392] Binders that can be used in dispersion-type EL elements include organic and inorganic materials. Alternatively, a mixture of organic and inorganic materials may be used. Polymers with relatively high dielectric constants, such as cyanoethyl cellulose resins, and polyethylene , polypropylene, polystyrene resin, silicone resin, epoxy resin, vinyl fluoride Resins such as polyamide and polybenzoimide can also be used. Heat-resistant polymers such as polybenzimidazole or siloxane resins It may be used.

[0393] In addition, vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenolic resins, Oil, novolac resin, acrylic resin, melamine resin, urethane resin, oxazole resin ( Resin materials such as polybenzoxazole may also be used, and photocurable resins may also be used. Furthermore, barium titanate (BaTiO3) and titanium dioxide (STI) can be added to these resins. The dielectric constant is adjusted by mixing an appropriate amount of high dielectric constant particles such as trontium (SrTiO3) It is also possible.

[0394] Inorganic materials used for binders include silicon oxide (SiO X ), silicon nitride (SiN X ), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen Aluminum, or aluminum oxide (Al2O3), titanium oxide (TiO2), BaTiO 3. SrTiO3, lead titanate (PbTiO3), potassium niobate (KNbO3), Lead niobate (PbNbO3), tantalum oxide (Ta2O5), barium tantalate (BaT a2O6), lithium tantalate (LiTaO3), yttrium oxide (Y2O3), acid Materials selected from substances including zirconium oxide (ZrO2), ZnS, and other inorganic materials It can be used by adding an inorganic material with a high dielectric constant to an organic material. By this, the dielectric constant of the layer containing the luminescent material composed of the luminescent material and the binder can be controlled. It is possible to further increase the dielectric constant.

[0395] The EL element can emit light by applying a voltage between a pair of electrode layers. However, in this embodiment, it is preferable to use AC driving. In the optical element, an electric field generated by the first electrode 201 and the second electrode 212 is used. The electric field generated for light emission is different from that of other devices. This is similar to the electric field in the liquid crystal display device described in the embodiment.

[0396] As shown in this embodiment, the distance between the electrodes is controlled by forming an insulating film on the first electrode. For example, in the configuration shown in this embodiment, the distance between the electrodes can be controlled. This also makes it possible to obtain a microcavity effect between the first electrode and the second electrode. This makes it possible to create a light emitting device with good color purity.

[0397] As described above, the scope of application of the present invention is extremely wide, and it can be used in electronic devices in all fields. It is possible.

[0398] The present invention is not limited to the above-described embodiment, and the present invention is not limited to the above-described embodiment. Various modifications can be made within the scope of the present invention.

[0399] (34th embodiment) An electronic device according to a 34th embodiment of the present invention will be described with reference to FIG. These electronic devices include the display device or display module shown in any of the above-described embodiments. It is equipped with.

[0400] These electronic devices include cameras such as video cameras and digital cameras, goggle-type devices, displays (head-mounted displays), navigation systems, sound reproduction devices ( car audio components, computers, game devices, personal digital assistants (mobile computers, computers, mobile phones, portable game consoles, electronic books, etc.), image playback devices equipped with recording media (Specifically, recording media such as Digital Versatile Disc (DVD) (Devices equipped with a display that can reproduce and display the image) A specific example of electronic equipment is shown in FIG.

[0401] FIG. 36(A) shows a television receiver or a monitor of a personal computer. 01, support base 2002, display unit 2003, speaker unit 2004, video input terminal 200 The display unit 2003 includes the display device or display shown in any of the above embodiments. The display module is used. This improves the degree of freedom in determining the distance between the pixel electrode and the common electrode. The optimum values ​​for the spacing and width of the opening pattern vary depending on the distance between the pixel electrode and the common electrode. Therefore, the size, width and spacing of the opening pattern can be freely arranged. It is possible to control the gradient of the electric field applied between the electrodes, for example, in the direction parallel to the substrate. In particular, in a display device using a liquid crystal, The liquid crystal molecules aligned parallel to the substrate (so-called homogeneous alignment) are The viewing angle can be widened by applying an optimal electric field. When a part of a pixel electrode having the same potential as the drain or source of a transistor is arranged below the drain or source, In this case, the potential of the drain or source is stabilized. This allows the distance between the electrodes to be narrowed, and the electric field is applied smoothly, allowing the liquid crystal molecules to In addition, by narrowing the spacing between the opening patterns of the electrodes, the voltage can be reduced, so power consumption can also be reduced.

[0402] Figure 36(B) shows a digital camera. The main body 2101 has an image receiving unit 2103 on the front side. A shutter 2106 is provided on the top surface of the main body 2101. The rear surface of the main body 2101 is provided with a display unit 2102, operation keys 2104, and an external connection port. The display unit 2102 is provided with a display port 2105. A display device or a display module having the above structure is used. By having such a structure, it is possible to obtain the same effects as those of the above-described embodiment. As a result, the degree of freedom in the spacing between the pixel electrode and the common electrode is improved. The optimum values ​​for the arrangement interval and the width of the opening pattern vary depending on the distance between the pixel electrode and the common electrode. Therefore, the size, width and spacing of the opening pattern can be freely arranged. This makes it possible to control the gradient of the electric field applied between the electrodes, and for example, In particular, in a display device using a liquid crystal, In this case, the liquid crystal molecules aligned parallel to the substrate (so-called homogeneous alignment) are Since it can be controlled in various directions, it can be used for products with LCD displays or LCD modules with wide viewing angles. We can provide it.

[0403] FIG. 36(C) shows a notebook personal computer. The main body 2201 has a keyboard. A keyboard 2204, an external connection port 2205, and a pointing device 2206 are provided. The main body 2201 is provided with a housing 2202 having a display unit 2203. The display unit 2203 may be a display device or a display module shown in any of the above embodiments. By having this display device or display module, For example, the distance between the pixel electrode and the common electrode can be freely adjusted. The arrangement interval and width of the opening pattern of the pixel electrode are set to be equal to or smaller than the pixel electrode. The optimum value varies depending on the distance between the electrode and the common electrode. The size, width, and spacing of the electrodes can be freely arranged. This makes it possible to easily increase the electric field in the direction parallel to the substrate, for example. In particular, in a display device using liquid crystal, the liquid crystal molecules aligned parallel to the substrates The molecules (so-called homogeneous alignment) can be controlled in a direction parallel to the substrate, resulting in a wide viewing angle. Products having a liquid crystal display device or a liquid crystal module can be provided.

[0404] FIG. 36(D) shows a mobile computer, which includes a main body 2301, a display unit 2302, a switch, The display unit 2302 includes an LCD panel 2303, operation keys 2304, an infrared port 2305, etc. The display unit 2302 is provided with an active matrix display device. The display device or display module shown in the embodiment is used. By having the display module, the same effects as those of the above-described embodiment can be obtained. For example, the degree of freedom in the spacing between the pixel electrode and the common electrode is improved. The spacing between the electrodes and the width of the opening pattern are determined by the distance between the pixel electrode and the common electrode. Since the size, width and spacing of the opening pattern can be freely arranged. This makes it possible to control the gradient of the electric field applied between the electrodes, for example, It is easy to increase the electric field in the row direction. In this method, the liquid crystal molecules are aligned parallel to the substrate (so-called homogeneous alignment). Since it can be controlled in a parallel direction, it is suitable for LCD displays or LCD modules with a wide viewing angle. We can provide products.

[0405] FIG. 36(E) shows an image reproducing device. The main body 2401 has a display unit 2404, a recording medium reader / writer, and a The main body 2401 is provided with a slot 2405 and operation keys 2406. A housing 2402 having a speaker unit 2407 and a display unit 2403 is attached. The display unit 2403 and the display unit 2404 each have the display shown in any of the above embodiments. A display device or a display module is used. By using the pixel electrode, the same effect as that of the above embodiment can be obtained. The degree of freedom in the spacing between the common electrodes is improved. The optimum width of the turn varies depending on the distance between the pixel electrode and the common electrode. The size, width and spacing of the opening pattern can also be freely set. This allows us to control the gradient of the electric field, for example, by increasing the electric field parallel to the substrate. In particular, in a display device using a liquid crystal, the The liquid crystal molecules, which are aligned in a uniform direction (so-called homogeneous alignment), can be controlled in a direction parallel to the substrate. Therefore, it is possible to provide products having a liquid crystal display device or liquid crystal module with a wide viewing angle.

[0406] Figure 36(F) shows an electronic book. The main body 2501 is provided with operation keys 2503. In addition, a plurality of display units 2502 are attached to the main body 2501. The display device or display module shown in any of the above-described embodiments is used in the By having this display device or display module, the same as the above-described embodiment can be realized. For example, the degree of freedom in determining the distance between the pixel electrode and the common electrode is improved. The spacing and width of the opening patterns of the electrodes are determined by the distance between the pixel electrode and the common electrode. The optimum value changes depending on the distance, so you can freely adjust the size, width and spacing of the opening pattern. The gradient of the electric field applied between the electrodes can be controlled. This makes it easy to increase the electric field in the direction parallel to the substrate. In a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called polarized light) Since the liquid crystal display device can be controlled in a direction parallel to the substrate, it can be used for LCDs with wide viewing angles. can provide products with liquid crystal modules.

[0407] FIG. 36(G) shows a video camera, and the main body 2601 has an external connection port 2604 and a remote control. A computer receiving unit 2605, an image receiving unit 2606, a battery 2607, an audio input unit 2608, and an operation The main body 2601 is provided with a key 2609 and an eyepiece 2610. The display unit 2602 has a housing 2603 mounted thereon. The display device or display module shown in any of the embodiments is used. Alternatively, by having a display module, the same effects as those of the above-described embodiment can be obtained. For example, the degree of freedom in the spacing between the pixel electrode and the common electrode is improved. The pattern spacing and the width of the opening pattern depend on the distance between the pixel electrode and the common electrode. The size, width and spacing of the opening pattern can be freely set as the optimum values ​​change. This makes it possible to control the gradient of the electric field applied between the electrodes, and for example, It is easy to increase the electric field parallel to the plate. In the device, the liquid crystal molecules aligned parallel to the substrate (so-called homogeneous alignment) are Since it can be controlled in a direction parallel to the substrate, it is possible to effectively realize a liquid crystal display device or liquid crystal module with a wide viewing angle. We can provide products that meet your needs.

[0408] FIG. 36(H) shows a mobile phone, which includes a main body 2701, a housing 2702, a display unit 2703, and an audio Input unit 2704, audio output unit 2705, operation keys 2706, external connection port 2707, The display unit 2703 includes an antenna 2708 and the like. A display device or a display module is used. By using the pixel electrode, the same effect as that of the above embodiment can be obtained. The degree of freedom in the spacing between the common electrodes is improved. The optimum width of the turn varies depending on the distance between the pixel electrode and the common electrode. The size, width and spacing of the opening pattern can also be freely set. This allows us to control the gradient of the electric field, for example, by increasing the electric field parallel to the substrate. In particular, in a display device using a liquid crystal, the The liquid crystal molecules, which are aligned in a uniform direction (so-called homogeneous alignment), can be controlled in a direction parallel to the substrate. Therefore, it is possible to provide products having a liquid crystal display device or liquid crystal module with a wide viewing angle. [Explanation of symbols]

[0409] 100 boards 101 Electrode 102 insulating film 103 Semiconductor film 104 Gate insulating film 105 Gate wiring 106 Auxiliary wiring 107 Interlayer insulating film 108 Source wiring 109 Conductive film for connection 110 Conductive film for connection 111 Interlayer insulating film 112 Electrode 113 Orientation film 114 LCD 115 Orientation film 116 Color Filter 118 Polarizing Plate 119 Polarizing Plate 120 Opposing substrate 121 Thin-film transistor 122 Thin-film transistor 123 Semiconductor Film 150 pixel unit 152 Source line driver circuit 154 Gate line driving circuit 160 Conductive film 170 Conductive film 180 Gate wiring 200 boards 201 Electrode 202 insulating film 206 Interlayer insulating film 207 Interlayer insulating film 212 Electrode 213 Dielectric 214 layers 215 Protective layer 220 board 221 Thin-film transistor 224 layers 800 boards 801 Electrode 802 insulating film 803 Crystalline Semiconductor Film 804 Gate insulating film 807 Wiring 808 Wiring 811 Impurity elements 815 insulating film 816 Interlayer insulating film 818 Conductive film 819 Conductive film 820 Photoresist film 825 Thin-film transistor 826 Alignment film 827 Thin-film transistor 828 Electrode 830 Opposing substrate 831 Alignment film 832 Color Filter 833 Spacer 834 Sealing material 836 Anisotropic Conductive Film 837 FPC 840 reticle 852 External terminal connection area 853 Sealing area 854 Gate signal line driving circuit area 856 pixel area 857 Source signal line driver circuit area 910 Source Driver 911 Shift Register 912 Thin Film Transistor 920 Gate Driver 930 pixel section 940 Thin Film Transistors 950 IC 101a Opening pattern 101b Opening pattern 103a Impurity region 103b Impurity region 103c Channel Region 105a gate electrode 105b gate electrode 105c connection wiring 106a Auxiliary wiring 110a metal film 112a Opening pattern 112b Opening pattern 112c opening pattern 112d opening pattern 112e opening pattern 112f opening pattern 112g opening pattern 112h Opening Pattern 124a n-type semiconductor film 124b n-type semiconductor film 130b color filter 130g color filter 130r color filter 180a Gate electrode 180b gate electrode 2001 Case 2002 Support stand 2003 Display section 2004 Speaker section 2005 Video input terminal 2101 Main unit 2102 Display section 2103 Image receiving unit 2104 Operation key 2105 External connection port 2106 Shutter 2201 Main unit 2202 Case 2203 Display section 2204 keyboard 2205 External connection port 2206 Pointing Mouse 2301 Main unit 2302 Display section 2303 Switch 2304 Operation key 2305 Infrared port 2401 Main Unit 2402 Case 2403 Display section A 2404 Display part B 2406 Operation Key 2407 Speaker section 2501 Main Unit 2502 Display section 2503 Operation Key 2601 Main unit 2602 Display section 2603 Housing 2604 External connection port 2605 Remote control receiver 2606 Image receiving unit 2607 Battery 2608 Audio input section 2609 Operation Key 2610 Eyepiece 2701 Main unit 2702 Case 2703 Display section 2704 Audio input unit 2705 ​​Audio output unit 2706 Operation Key 2707 External connection port 2708 Antenna 3700 board 3701 Electrode 3702 Electrode 3703 Thin-film transistors 3704 Insulating film 3705 Interlayer insulating film 3707 Thin-film transistor 805a Gate electrode 805b Gate electrode 806a Gate electrode 806b Gate electrode 810a Impurity region 810b Impurity region 810c impurity region 812a Resist pattern 813a Impurity region 813c Impurity region 814a Impurity region 817a Connection hole 817b Connection hole 817c Connection hole 817d Connection hole 821a code 822a Resist pattern 822b Resist pattern 822c ​​resist pattern 822d resist pattern 823a Source wiring 823b Drain wiring 824c Conductive film for connection 835a Polarizing plate 838a Terminal electrode 838b terminal electrode 841a shading pattern 841b shading pattern 841c shading pattern 842a Semipermeable membrane pattern 842b Semipermeable membrane pattern 842c Semipermeable membrane pattern 842d Semipermeable membrane pattern

Claims

[Claim 1] a first electrode formed above the substrate; a first insulating film formed above the first electrode; a semiconductor film formed above the first insulating film; a second insulating film formed above the semiconductor film; a conductive film formed above the second insulating film; a third insulating film formed above the conductive film; a second electrode formed above the third insulating film and having an opening; a liquid crystal disposed above the second electrode.

Images