Organic compound and light-emitting device

Abstract

To provide an organic compound with low synthesis cost, and a light-emitting device with a long lifetime.SOLUTION: An organic compound represented by General Formula (G4) is provided. Note that Ar1 and Ar2 are each independently a group represented by any one of General Formulas (Ar-1) to (Ar-4) and include the same fused ring, and R1 to R14 each independently represent hydrogen (including deuterium). Note that the organic compound represented by General Formula (G4) contains two or more deuterium atoms.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting device, a light-receiving device, a light-receiving and light-emitting device, a light-emitting apparatus, a light-receiving and light-emitting apparatus, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, driving methods thereof, and manufacturing methods thereof. [Background technology]

[0002] Light-emitting devices (organic EL devices) that utilize electroluminescence (EL) using organic compounds are becoming more and more common. The basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material between them. By applying a voltage to this device, carriers are injected, and the recombination energy of these carriers is utilized to emit light from the light-emitting material.

[0003] Since such light-emitting devices are self-luminous, when used in the pixels of a display device, they offer advantages such as higher visibility and no need for backlighting compared to liquid crystals, making them suitable for use in flat panel displays. Another major advantage of display devices using such light-emitting devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response time.

[0004] Display devices using light-emitting devices are suitable for a variety of electronic devices, and research and development is underway to develop light-emitting devices with even better characteristics. For example, Patent Document 1 discloses a light-emitting device that has a longer lifespan by using a deuterated iridium complex. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-227374 [Non-patent literature]

[0006] [Non-Patent Document 1] Dolomanov, OV, Bourhis, LJ, Gildea, RJ, Howard, JAK & Puschmann, H. (2009), J. Appl. Cryst. 42, 339-341 [Non-patent document 2] Sheldrick, GM (2015). Acta Cryst. A71, 3-8 [Non-patent document 3] Sheldrick, GM (2015). Acta Cryst. C71, 3-8 Summary of the Invention [Problem to be solved by the invention]

[0007] This technology achieves both a longer lifespan for light-emitting devices and reduced manufacturing costs. Devices using organic compounds containing deuterium can achieve a longer lifespan than devices using organic compounds without deuterium. However, deuterated compounds are difficult to purify and have high synthesis costs. Therefore, the manufacturing costs of light-emitting devices using organic compounds containing deuterium are likely to be high. In particular, the host material used in the light-emitting layer of a light-emitting device is one of the most frequently used materials among the materials that make up a light-emitting device. Therefore, when an organic compound containing deuterium is used as the host material, there is a particular concern about increased manufacturing costs for light-emitting devices.

[0008] Therefore, an object of one embodiment of the present invention is to provide a deuterated organic compound that can be synthesized at low cost. Another object of one embodiment of the present invention is to provide an organic compound with high purity. Another object of one embodiment of the present invention is to provide a synthesis method suitable for providing a highly pure organic compound. Another object of one embodiment of the present invention is to provide an organic compound with high hole-transporting properties. Another object of one embodiment of the present invention is to provide a light-emitting device with a long lifetime. Another object of one embodiment of the present invention is to provide a light-emitting device with high reliability.

[0009] Another object of one embodiment of the present invention is to provide a novel organic compound. Another object of one embodiment of the present invention is to provide a novel hole-transporting material. Another object of one embodiment of the present invention is to provide a novel host material. Another object of one embodiment of the present invention is to provide a novel light-emitting device. Another object of one embodiment of the present invention is to provide a novel display device or electronic device.

[0010] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0011] One embodiment of the present invention is an organic compound represented by general formula (G4).

[0012] [ka]

[0013] In general formula (G4), Ar 1 and Ar 2 are each independently a group represented by any one of general formulas (Ar-1) to (Ar-4), and each have the same fused ring; R 1 ~R 14 Each independently represents hydrogen (including deuterium). 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G4) has two or more deuterium atoms.

[0014] Another embodiment of the present invention is an organic compound represented by general formula (G5).

[0015] [ka]

[0016] In general formula (G5), Ar 1 is a group represented by any one of general formulas (Ar-1) to (Ar-4), and R 1 ~R 7 Each independently represents hydrogen (including deuterium). 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G5) has two or more deuterium atoms.

[0017] Another embodiment of the present invention is an organic compound represented by general formula (G6).

[0018] [ka]

[0019] In general formula (G6), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 15 ~R 21 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G6) has two or more deuterium atoms.

[0020] Another embodiment of the present invention is an organic compound represented by general formula (G7).

[0021] [ka]

[0022] In general formula (G7), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 15 ~R 21 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G7) has two or more deuterium atoms.

[0023] Another embodiment of the present invention is an organic compound represented by structural formula (200), structural formula (217), structural formula (260), structural formula (270), structural formula (278), or structural formula (287).

[0024] [ka]

[0025] Another embodiment of the present invention is a light-emitting device including an organic compound layer between a pair of electrodes, the organic compound layer including an organic compound represented by General Formula (G1).

[0026] [ka]

[0027] In general formula (G1), Ar 1 and Ar 2 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, and R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G1) has two or more deuterium atoms and Ar 1 The number of carbon atoms forming the ring of Ar 2 The total number of carbon atoms forming the ring is 18 or more.

[0028] Another embodiment of the present invention is a light-emitting device including an organic compound layer between a pair of electrodes, the organic compound layer including an organic compound represented by General Formula (G2).

[0029] [ka]

[0030] In general formula (G2), Ar 1 and Ar 2 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, and R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G2) has two or more deuterium atoms and Ar 1 The number of carbon atoms forming the ring of Ar 2 The total number of carbon atoms forming the ring is 18 or more.

[0031] In the light-emitting device having the above configuration, Ar 1 and Ar 2 It is more preferable that at least one of them is a group represented by any one of general formulas (Ar-1) to (Ar-5).

[0032] [ka]

[0033] In the general formulae (Ar-1) to (Ar-5), R 15 ~R 59 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

[0034] Another embodiment of the present invention is a light-emitting device including an organic compound layer between a pair of electrodes, the organic compound layer including an organic compound represented by General Formula (G3).

[0035] [ka]

[0036] In general formula (G3), Ar 1 and Ar 2 each independently represents a substituted or unsubstituted aryl group having 10 to 30 carbon atoms forming a ring, and each has the same fused ring; R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G3) has two or more deuterium atoms.

[0037] In the light-emitting device having the above configuration, Ar 1 is more preferably a group represented by any one of general formulas (Ar-1) to (Ar-4).

[0038] [ka]

[0039] In the general formulae (Ar-1) to (Ar-4), R 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

[0040] Another embodiment of the present invention is a display device including the light-emitting device having any of the above structures and a transistor or a substrate.

[0041] Another embodiment of the present invention is an electronic device including a light-emitting device having any of the above structures and a detection unit, an input unit, or a communication unit. [Effects of the Invention]

[0042] According to one embodiment of the present invention, a deuterated organic compound can be provided at low synthesis cost. According to another embodiment of the present invention, a highly pure organic compound can be provided. According to another embodiment of the present invention, a synthesis method suitable for providing a highly pure organic compound can be provided. According to another embodiment of the present invention, an organic compound with a high hole-transporting property can be provided. According to another embodiment of the present invention, a light-emitting device with a long lifetime can be provided. According to another embodiment of the present invention, a light-emitting device with high reliability can be provided.

[0043] According to one embodiment of the present invention, a novel organic compound can be provided. According to one embodiment of the present invention, a novel hole-transporting material can be provided. According to one embodiment of the present invention, a novel host material can be provided. According to one embodiment of the present invention, a novel light-emitting device can be provided. According to one embodiment of the present invention, a novel display device or electronic device can be provided.

[0044] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0045] [Figure 1] 1(A) and 1(B) are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 2] 2A to 2E are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 3] 3(A) and 3(B) are a top view and a cross-sectional view of the light-emitting device. [Figure 4] 4A to 4E are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 5] 5A and 5B are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 6] 6A to 6D are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 7] 7A to 7C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 8] 8A to 8C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 9] 9A to 9C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 10] 10A and 10B are perspective views showing configuration examples of a display module. [Figure 11] 11(A) and 11(B) are cross-sectional views showing examples of the configuration of a light-emitting device. [Figure 12] FIG. 12 is a perspective view showing an example of the configuration of a light emitting device. [Figure 13]Fig. 13A is a cross-sectional view showing a structural example of a light-emitting device, Fig. 13B and Fig. 13C are cross-sectional views showing structural examples of a transistor. [Figure 14] FIG. 14 is a cross-sectional view showing an example of the configuration of a light emitting device. [Figure 15] 15A to 15C are cross-sectional views and top views showing structural examples of a light-emitting device. [Figure 16] 16A to 16D are cross-sectional views showing examples of the configuration of a light-emitting device. [Figure 17] 17A to 17C are cross-sectional views and top views showing structural examples of a light-emitting device. [Figure 18] 18A to 18D are diagrams showing examples of electronic devices. [Figure 19] 19A to 19F are diagrams showing examples of electronic devices. [Figure 20] 20A to 20G are diagrams showing examples of electronic devices. [Figure 21] FIG. 21 shows the results of electron diffraction crystal structure analysis. [Figure 22] FIG. 22 shows the absorption spectrum and PL spectrum of a toluene solution of BisβNCz-d28. [Figure 23] FIG. 23 shows the absorption and PL spectra of a thin film of BisβNCz-d28. [Figure 24] FIG. 24 shows the results of an analysis of the spin density distribution in the triplet excited state of BisβNCz-d28 using molecular dynamics calculations. [Figure 25] FIG. 25 is a diagram illustrating the configuration of a device according to an embodiment. [Figure 26] FIG. 26 is a graph illustrating the luminance-current density characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 27] FIG. 27 is a diagram illustrating the luminance-voltage characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 28]FIG. 28 is a graph illustrating the current efficiency-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 2. In FIG. [Figure 29] FIG. 29 is a graph illustrating the current density-voltage characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 30] FIG. 30 is a graph illustrating the external quantum efficiency-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 2. In FIG. [Figure 31] FIG. 31 is a diagram illustrating the electroluminescence spectra of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 32] FIG. 32 is a graph showing the change in luminance of the light-emitting device 1 and the comparative light-emitting device 2 with respect to the driving time. [Figure 33] FIG. 33 shows the absorption and PL spectra of a toluene solution of βNCCαN-d28. [Figure 34] FIG. 34 shows the absorption and PL spectra of a thin film of βNCCαN-d28. [Figure 35] FIG. 35 shows the absorption spectrum and PL spectrum of a toluene solution of BisβNCz-d28. [Figure 36] FIG. 36 shows the absorption and PL spectra of a thin film of BisβNCz-d28. [Figure 37] FIG. 37 is a diagram illustrating the luminance-current density characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 38] FIG. 38 is a diagram illustrating the luminance-voltage characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 39] FIG. 39 is a graph illustrating the current efficiency-luminance characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 40] FIG. 40 is a diagram illustrating the current density-voltage characteristics of the light-emitting device 3 and the light-emitting device 4. In FIG. [Figure 41] FIG. 41 is a diagram illustrating the external quantum efficiency-luminance characteristics of the light-emitting device 3 and the light-emitting device 4. In FIG. [Figure 42] FIG. 42 is a diagram illustrating the electroluminescence spectra of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 43] FIG. 43 is a diagram showing the change in luminance of light-emitting device 3 and light-emitting device 4 with respect to the driving time. DETAILED DESCRIPTION OF THE INVENTION

[0046] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention and an organic compound according to one embodiment of the present invention that can be used for the light-emitting device will be described.

[0047] <Example of light-emitting device configuration> First, a structure of a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0048] FIG. 1A is a schematic cross-sectional view of a light-emitting device 10, which is an example of a light-emitting device according to one embodiment of the present invention.

[0049] The light-emitting device 10 has a pair of electrodes (a first electrode 101 and a second electrode 102) and an organic compound layer 103 provided between the pair of electrodes. The organic compound layer 103 has at least a light-emitting layer 113. The organic compound layer 103 shown in FIG. 1A also has functional layers such as a hole-injection layer 111, a hole-transport layer 112, an electron-transport layer 114, and an electron-injection layer 115 in addition to the light-emitting layer 113.

[0050] In the present embodiment, the first electrode 101 of the pair of electrodes is described as an anode and the second electrode 102 as a cathode, but the configuration of the light-emitting device 10 is not limited to this. That is, the first electrode 101 may be the cathode and the second electrode 102 may be the anode, and the layers between the electrodes may be stacked in the reverse order. That is, the stacking order from the anode side may be the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114, and the electron injection layer 115.

[0051] 1A , the organic compound layer 103 may have at least one selected from a hole-injection layer 111, a hole-transport layer 112, an electron-transport layer 114, and an electron-injection layer 115 in addition to the light-emitting layer 113. Alternatively, the organic compound layer 103 may have a functional layer that has a function of reducing a hole- or electron-injection barrier, improving hole- or electron-transport properties, inhibiting hole- or electron-transport properties, or suppressing quenching caused by an electrode. Each functional layer may be a single layer or may have a stacked structure of multiple layers.

[0052] Fig. 1(B) is a cross-sectional schematic view illustrating an example of the light-emitting layer 113 shown in Fig. 1(A). The light-emitting layer 113 shown in Fig. 1(B) includes a host material 118 and a guest material 119. One or more organic compounds can be used as the host material 118. Fig. 1(B) illustrates an example of the light-emitting layer 113 using organic compounds 118_1 and 118_2 as the host materials 118.

[0053] In the light-emitting device of one embodiment of the present invention, an organic compound having a structure in which two carbazole rings, each having an aryl group bonded to N (nitrogen) at the 9-position, are bonded to the two carbazole rings by a single bond, is preferably used as the host material 118. Such an organic compound has a high hole-transport property and therefore can function well as the host material 118, thereby improving the carrier balance of the light-emitting device, and therefore can be suitably used for the light-emitting device.

[0054] In addition, the two carbazole rings of the organic compound or the aryl group bonded to the carbazole ring preferably contain deuterium, which increases the thermal stability and electrochemical stability of the organic compound. Therefore, when the organic compound is used as the host material 118, deterioration of the light-emitting device of one embodiment of the present invention can be suppressed and reliability can be improved.

[0055] Furthermore, when the total number of carbon atoms in the aryl group bonded to the N at the 9th position of one carbazole ring of the organic compound and the aryl group bonded to the N at the 9th position of the other carbazole ring is 18 or more, the organic compound can have a higher glass transition point than when the total number of carbon atoms is less than 18. Therefore, by using an organic compound as the host material 118, crystallization of the light-emitting layer 113 can be prevented, and the heat resistance and reliability of the light-emitting device of one embodiment of the present invention can be improved. Furthermore, when the total number of carbon atoms in the aryl group bonded to the N at the 9th position of one carbazole ring and the aryl group bonded to the N at the 9th position of the other carbazole ring is 18 or more, the organic compound can have a higher carrier-transport property than when the total number of carbon atoms in the aryl group bonded to the N at the 9th position of the other carbazole ring is less than 18. Therefore, by using an organic compound as the host material 118, a device with high efficiency and low driving voltage can be provided.

[0056] Furthermore, when the organic compound does not have a substituent such as an alkyl group, when used as the host material 118, the intermolecular distance in the light-emitting layer 113 is shorter than that of a host material having an alkyl group. This increases the efficiency of carrier conduction (hopping conduction) and improves carrier transport, making it possible to provide a light-emitting device that can be driven at a high efficiency and low voltage. On the other hand, when the organic compound has an alkyl group, the sublimation property of the material is improved, allowing it to be sublimated at a low temperature, which is suitable for achieving high purity in sublimation purification. When a film is formed by evaporation, a high-purity film can be formed, and deterioration caused by impurities can be suppressed. Therefore, when used as the host material 118, a light-emitting device with a long lifetime can be provided.

[0057] Next, a more specific structure of an organic compound that can be used as the host material 118 will be described using a general formula. In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G1) can be used as the host material 118.

[0058] [ka]

[0059] In general formula (G1), Ar 1 and Ar 2 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, and R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G1) has two or more deuterium atoms and Ar 1 The number of carbon atoms forming the ring of Ar 2 The total number of carbon atoms forming the ring is 18 or more.

[0060] The organic compound represented by general formula (G1) has an aryl group (Ar 1 and Ar 2 ) is bonded to the two carbazole rings, and the two carbazole rings are bonded to each other by a single bond. Therefore, the compound has a high hole-transporting property and can function favorably as the host material 118.

[0061] Furthermore, since the organic compound represented by the general formula (G1) contains two or more deuterium atoms, it is an organic compound having high thermal stability and high electrochemical stability. Therefore, by using it as the host material 118, deterioration of the light-emitting device 10 can be suppressed and reliability can be improved.

[0062] In addition, the organic compound represented by general formula (G1) has an aryl group (Ar 1 ) and an aryl group (Ar ) bonded to N at the 9-position of the other carbazole ring. 2) has a total carbon number of 18 or more, and thus is an organic compound with a high glass transition point. Therefore, by using the aryl group bonded to the N at the 9-position of one carbazole ring and the aryl group bonded to the N at the 9-position of the other carbazole ring as the host material 118, crystallization of the light-emitting layer 113 can be prevented, and the reliability of the light-emitting device of one embodiment of the present invention can be improved. Furthermore, when the total carbon number of the aryl group bonded to the N at the 9-position of one carbazole ring and the aryl group bonded to the N at the 9-position of the other carbazole ring is 18 or more, the aryl group has a high carrier-transport property compared to when the total carbon number is less than 18, and therefore a highly efficient device with a low driving voltage can be provided.

[0063] In the light-emitting device of one embodiment of the present invention, the organic compound represented by General Formula (G2) can be used as the host material 118.

[0064] [ka]

[0065] In general formula (G2), Ar 1 and Ar 2 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, and R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G2) has two or more deuterium atoms and Ar 1 The number of carbon atoms forming the ring of Ar 2 The total number of carbon atoms forming the ring is 18 or more.

[0066] The organic compound represented by general formula (G2) differs from the organic compound represented by general formula (G1) in that the bonding position of the single bond connecting the two carbazole rings is limited to the C (carbon) at the 3-position of each carbazole ring. By limiting the bonding position of the single bond connecting the two carbazole rings to the C (carbon) at the 3-position of each carbazole ring, when focusing on the benzene ring to which both the single bond and the N of the carbazole ring are bonded, the respective positions are in a para-position relationship with respect to the benzene ring. This is true for both carbazole rings. This is preferable because the π-conjugated system within the molecule extends to both carbazole rings, raising the HOMO level and improving hole transport properties.

[0067] Furthermore, organic compounds in which the bonding position of the single bond connecting two carbazole rings is limited to the C-3 of each carbazole ring, such as the organic compound represented by general formula (G2), are preferred because they can reduce synthesis costs. The synthesis of such organic compounds requires the use of an intermediate in which a halogen atom or the like is introduced into the C-3 of the carbazole ring. Because methods for introducing a halogen atom or the like into the C-3 of the carbazole ring are generally established, impurities are less likely to be generated in the synthesis reaction compared to introducing a halogen atom or the like into a C-3 of the carbazole ring at another position. Therefore, organic compounds that can be synthesized using an intermediate in which a halogen atom or the like is introduced into the C-3 of the carbazole ring, such as the organic compound represented by general formula (G2), are easier to purify and achieve high purity, making them preferred because they can reduce synthesis costs.

[0068] In the light-emitting device of one embodiment of the present invention, when the organic compound represented by General Formula (G1) or the organic compound represented by General Formula (G2) is used as the host material 118, Ar 1 and Ar 2 It is more preferable that at least one of them is a group represented by any one of general formulas (Ar-1) to (Ar-5).

[0069] [ka]

[0070] In the general formulae (Ar-1) to (Ar-5), R 15 ~R 59 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

[0071] The groups represented by the general formulae (Ar-1) to (Ar-5) have a condensed aromatic ring, and therefore, in the organic compound represented by the general formula (G1) or (G2), Ar 1 and Ar 2 For example, if a heteroaromatic ring in which carbon (C) in any of the general formulae (Ar-1) to (Ar-5) is substituted with nitrogen (N), the compound may not be able to emit light efficiently due to the influence of electrons in the light-emitting device. Therefore, a fused aromatic ring is preferred.

[0072] In addition, in the organic compound represented by general formula (G2), Ar 1 and Ar 2 and each independently represent a group represented by any one of the groups represented by general formulas (Ar-1) to (Ar-5), thereby achieving a high glass transition temperature (T g ) and is an organic compound with high electrochemical stability, which is preferable.

[0073] In the light-emitting device of one embodiment of the present invention, the organic compound represented by General Formula (G3) can be used as the host material 118.

[0074] [ka]

[0075] In general formula (G3), Ar 1 and Ar 2each independently represents a substituted or unsubstituted aryl group having 10 to 30 carbon atoms forming a ring, and each has the same fused ring; R 1 ~R 14 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G3) has two or more deuterium atoms.

[0076] In the organic compound represented by general formula (G3), Ar 1 and Ar 2 have the same fused rings, for example, Ar 1 and Ar 2 Both of these have a naphthalene ring. 1 and Ar 2 As long as each of Ar has the same fused ring, the positions of the bonds of the fused rings, the presence or absence of substituents, etc. may not be the same. For example, Ar 1 is a 1-naphthyl group, Ar 2 can be a 2-naphthyl group.

[0077] The organic compound represented by general formula (G3) differs from the organic compound represented by general formula (G2) in that the aryl groups bonded to N atoms of the two carbazole rings are groups having the same fused ring. The aryl groups bonded to N atoms of the two carbazole rings have the same fused ring, which increases the symmetry of the organic compound and enables high carrier transport properties to be achieved.

[0078] In the light-emitting device of one embodiment of the present invention, when the organic compound represented by General Formula (G3) is used as the host material 118, Ar 1 is more preferably a group represented by any one of general formulas (Ar-1) to (Ar-4).

[0079] [ka]

[0080] In the general formulae (Ar-1) to (Ar-4), R 15~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

[0081] The groups represented by the general formulae (Ar-1) to (Ar-4) have a condensed aromatic ring. In the organic compound represented by the general formula (G3), Ar 1 is a group represented by any one of general formulas (Ar-1) to (Ar-4), thereby achieving high T g and is an organic compound having high electrochemical stability, which is preferable.

[0082] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G4) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G4).

[0083] [ka]

[0084] In general formula (G4), Ar 1 and Ar 2 are each independently a group represented by any one of general formulas (Ar-1) to (Ar-4), and each have the same fused ring; R 1 ~R 14 Each independently represents hydrogen (including deuterium). 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G4) has two or more deuterium atoms.

[0085] In the organic compound represented by general formula (G4), Ar 1 and Ar 2 have the same fused rings, for example, Ar 1 is a group represented by general formula (Ar-1), Ar 2 It is also understood that Ar is a group represented by general formula (Ar-1). 1and Ar 2 It can be said that these groups are each represented by the same general formula. 15 ~R 50 ) may be the same or different from each other.

[0086] The organic compound represented by general formula (G4) is Ar 1 is limited to a group represented by any one of general formulas (Ar-1) to (Ar-4). The groups represented by general formulas (Ar-1) to (Ar-4) have a condensed aromatic ring, so that Ar 1 is limited to a group represented by any one of general formulas (Ar-1) to (Ar-4), the sublimation property is high and the T g and is an organic compound having high electrochemical stability, which is preferable.

[0087] In addition, the organic compound represented by general formula (G4) is R 1 ~R 14 It also differs from the organic compound represented by general formula (G3) in that R is limited to hydrogen (including deuterium). 1 ~R 14 By using hydrogen (including deuterium) as the host material 118, the intermolecular distance in the light-emitting layer 113 becomes shorter than that of a host material having an alkyl group, and therefore the efficiency of carrier conduction (hopping conduction) increases and the carrier transport property becomes good, making it possible to provide a light-emitting device that can be driven with high efficiency and low voltage. Furthermore, when two or more types of compounds are mixed to form an exciplex, the exciplex can be formed efficiently and energy transfer from the host material to the dopant is efficiently performed, making it possible to provide a light-emitting device that can be driven with high efficiency and low voltage.

[0088] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G5) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G5).

[0089] [ka]

[0090] In general formula (G5), Ar 1 is a group represented by any one of general formulas (Ar-1) to (Ar-4), and R 1 ~R 7 Each independently represents hydrogen (including deuterium). 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G5) has two or more deuterium atoms.

[0091] In the organic compound represented by general formula (G5), two Ar 1 is represented by the same general formula, (Ar-1) to (Ar-4), and two R 1 ~R 7 And two R 15 ~R 50 are the same groups.

[0092] The organic compound represented by general formula (G5) is a compound represented by general formula (G4), 8 R 1 Then, R 9 R 2 Then, R 10 R 3 Then, R 11 R 4 Then, R 12 R 5 Then, R 13 R 6 Then, R 14 R 7 And Ar 2 Ar 1In the organic compound according to one embodiment of the present invention, when the carbazole ring has deuterium, the two carbazole rings have deuterium at the same substitution position, thereby further enhancing symmetry. Specifically, the organic compound represented by general formula (G5) is an organic compound having a highly symmetric molecular structure with a C2 axis, which is formed by two identical skeletons bonded together via a single bond. Therefore, common raw materials and intermediates can be used for the two skeletons, making it easy to synthesize, and therefore preferable. Specifically, the organic compound represented by general formula (G5) is easy to synthesize because common raw materials and intermediates can be used for the two skeletons. Furthermore, the by-product of the homo-coupling product, which is easily produced, has the same molecular structure as the target compound, thereby suppressing the generation of impurities and enabling the target compound to be obtained with high purity. Furthermore, the organic compound represented by general formula (G5) is preferably a compound with Ar in the lowest triplet excited state (T1) in molecular dynamics calculations. 1 Therefore, when the highly symmetric organic compound is used as the host material 118, the excitation energy is distributed to two places, and therefore, when the light-emitting device is driven at the same current density (when the excitation frequency per molecule is the same), one Ar 1 This is preferable because the excitation frequency per group is reduced, making the molecule less susceptible to degradation.

[0093] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G6) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G6).

[0094] [ka]

[0095] In general formula (G6), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 15 ~R 21each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G6) has two or more deuterium atoms.

[0096] The organic compound represented by general formula (G6) differs from the organic compounds represented by the above general formulas in that the aryl groups bonded to the N atoms of the two carbazole rings are limited to substituted or unsubstituted naphthyl groups. By using substituted or unsubstituted naphthyl groups for both of the aryl groups bonded to the N atoms of the two carbazole rings, the sublimability can be improved and the compound can have high heat resistance, which is preferable. Furthermore, the naphthyl group is the smallest substituent among fused aromatic ring groups, and the absolute number of hydrogen atoms in the substituent is small. Therefore, when replacing hydrogen atoms in the substituent with deuterium, the absolute number of hydrogen atoms to be replaced is small, and there are few options for the replacement position, which is preferable in terms of reducing the synthetic load and cost.

[0097] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G7) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G7).

[0098] [ka]

[0099] In general formula (G7), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 15 ~R 21 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G7) has two or more deuterium atoms.

[0100] In the organic compound represented by general formula (G7), two R 1 are the same groups, and two R 2 are the same groups, and two R 3are the same groups, and two R 4 are the same groups, and two R 5 are the same groups, and two R 6 are the same groups, and two R 7 are the same groups, and two R 15 are the same groups, and two R 16 are the same groups, and two R 17 are the same groups, and two R 18 are the same groups, and two R 19 are the same groups, and two R 20 are the same groups, and two R 21 are the same group as each other.

[0101] The organic compound represented by general formula (G7) differs from the organic compound represented by general formula (G6) in that the aryl groups bonded to the N atoms of the two carbazole rings are limited to substituted or unsubstituted 2-naphthyl groups (also referred to as β-naphthyl groups). By using substituted or unsubstituted 2-naphthyl groups as the aryl groups bonded to the N atoms of the two carbazole rings, the organic compound represented by general formula (G7) can be an organic compound with a highly symmetric molecular structure having a C2 axis, formed by two identical skeletons bonded via a single bond. The organic compound represented by general formula (G7) is preferred because the two skeletons can be synthesized using common raw materials and intermediates. Furthermore, in the organic compound represented by general formula (G7), the spin density is distributed in the 2-naphthyl group at the T1 level in molecular dynamics calculations. When this organic compound is used as the host material 118, excitation energy is dispersed to two locations, and therefore, when a light-emitting device is driven at the same current density (when the excitation frequency per molecule is the same), the excitation frequency per 2-naphthyl group is reduced, making the molecule less susceptible to deterioration, which is preferable. Furthermore, organic compounds having 2-naphthyl groups have a higher T1 level than organic compounds having 1-naphthyl groups, which is preferable because it broadens the options for light-emitting materials in light-emitting devices.

[0102] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G8) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G8).

[0103] [ka]

[0104] In general formula (G8), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 31 ~R 39 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G8) has two or more deuterium atoms.

[0105] In the organic compound represented by general formula (G8), two R 1 are the same groups, and two R 2 are the same groups, and two R 3 are the same groups, and two R 4 are the same groups, and two R 5 are the same groups, and two R 6 are the same groups, and two R 7 are the same groups, and two R 31 are the same groups, and two R 32 are the same groups, and two R 33 are the same groups, and two R 34 are the same groups, and two R 35 are the same groups, and two R 36 are the same groups, and two R 37 are the same groups, and two R 38 are the same groups, and two R 39 are the same group as each other.

[0106] The organic compound represented by general formula (G8) is preferred because it has a highly symmetric bicarbazole skeleton, which allows for a reduction in the number of raw materials required for synthesis, making it easier to synthesize. Furthermore, the Suzuki coupling reaction can also be used as the final step in the synthesis of this organic compound. While the Suzuki coupling reaction potentially produces a homocoupling product as a by-product, the organic compound represented by general formula (G8) is preferred because the product obtained by the homocoupling reaction is also the desired product, reducing the burden of the purification process. Furthermore, the organic compound represented by general formula (G8) is preferred because it contains a phenanthryl group, which can improve robustness and glass transition temperature while maintaining a high T1 level.

[0107] In the light-emitting device of one embodiment of the present invention, an organic compound represented by General Formula (G9) can be used as the host material 118. Another embodiment of the present invention is an organic compound represented by General Formula (G9).

[0108] [ka]

[0109] In general formula (G9), R 1 ~R 7 each independently represents hydrogen (including deuterium), and R 40 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G9) has two or more deuterium atoms.

[0110] In the organic compound represented by general formula (G9), two R 1 are the same groups, and two R 2 are the same groups, and two R 3 are the same groups, and two R 4 are the same groups, and two R 5 are the same groups, and two R 6 are the same groups, and two R7 are the same groups, and two R 40 are the same groups, and two R 41 are the same groups, and two R 42 are the same groups, and two R 43 are the same groups, and two R 44 are the same groups, and two R 45 are the same groups, and two R 46 are the same groups, and two R 47 are the same groups, and two R 48 are the same groups, and two R 49 are the same groups, and two R 50 are the same group as each other.

[0111] The organic compound represented by general formula (G9) is preferred because it has a highly symmetric bicarbazole skeleton, which allows for a reduction in the number of raw materials used in the synthesis, making it easier to synthesize. Furthermore, the organic compound represented by general formula (G9) is preferred because it has a triphenylenyl group, which allows for increased robustness and an improved glass transition temperature while maintaining a high T1 level.

[0112] When the organic compounds represented by any of the general formulae (G1) to (G9) do not have an alkyl group and are used as the host material 118, the intermolecular distance in the light-emitting layer 113 becomes shorter than that of a host material having an alkyl group. This increases the efficiency of carrier conduction (hopping conduction) and improves carrier transport, making it possible to provide a light-emitting device that can be driven with high efficiency and low voltage.

[0113] <Position of deuterium> Here, the preferred positions of deuterium in the organic compounds represented by the above general formulae (G1) to (G9) will be explained.

[0114] In the organic compounds represented by general formulas (G1) to (G4), R 3 and R 10In the organic compounds represented by the general formulas (G5) to (G9), it is preferable that two R 3 is preferably deuterium. 3 and R 10 and two R in the general formulae (G5) to (G9) 3 are located at the para-position of nitrogen in the carbazole ring of the organic compound, where the C-H bond is weaker and more reactive than at other positions. Therefore, by using deuterium at these positions, the stability of the organic compound can be increased with minimal deuteration, which is preferable. Therefore, R in the organic compounds represented by general formulas (G1) to (G4) 3 and R 10 is deuterium, and two R 3 However, deuterium is preferred because it can most efficiently reduce chemical reactivity.

[0115] In the organic compounds represented by the general formulas (G1) to (G4), R 5 , R 6 , R 7 , R 12 , R 13 , and R 14 In the organic compounds represented by the general formulas (G5) to (G9), two R 5 , two R 6 , and two R 7 It is more preferable that R in the general formulas (G1) to (G4) is deuterium. 5 , R 6 , R 7 , R 12 , R 13 , and R 14 and two R in the general formulae (G5) to (G9) 5 , two R 6 , and two R 7are positions in the carbazole ring of the organic compound where C-H bonds are easily dissociated due to steric hindrance with the other carbazole ring, etc., and therefore, by having these be deuterium atoms, the stability of the organic compound can be increased, which is more preferable. Therefore, it is more preferable that six or more of the hydrogen atoms in the organic compounds represented by general formulas (G1) to (G9) are deuterium atoms.

[0116] In the organic compounds represented by the general formulas (G1) to (G4), R 1 ~R 7 is more preferably deuterium, and R 8 ~R 14 It is more preferable that each of the organic compounds represented by the general formulas (G5) to (G9) has two R 1 ~R 7 is more preferably deuterium. This converts all hydrogen atoms in the carbazole ring of the organic compound to deuterium, thereby suppressing degradation reactions involving hydrogen elimination from the entire carbazole ring. This improves the stability of the organic compound. Therefore, the organic compounds represented by general formulas (G1) to (G4) more preferably contain 7 or more deuterium atoms, and even more preferably 14 or more deuterium atoms. Furthermore, the organic compounds represented by general formulas (G5) to (G9) more preferably contain 14 or more deuterium atoms.

[0117] In addition, in the organic compounds represented by the general formulas (G5) to (G9), each of the R 15 ~R 21 is more preferably deuterium. This can increase the stability of the naphthyl group, thereby increasing the stability of the organic compound. Furthermore, molecular dynamics calculations have shown that spin density is distributed in this naphthyl group at the T1 level. The presence of deuterium in the skeleton where spin density is distributed at the T1 level also improves thermal and electrochemical stability in the excited state. Therefore, it is more preferable that the organic compounds represented by general formulas (G5) to (G9) contain 14 or more deuterium atoms.

[0118] In addition, in the organic compounds represented by the general formulae (G1) to (G9), it is preferable that all of the hydrogen atoms contained in the organic compounds are deuterium atoms, since this can maximize the thermal and electrochemical stability.

[0119] <Specific examples of substituents> Next, specific examples of the substituents applicable to the organic compounds represented by the general formulas (G1) to (G9) will be described. The substituents applicable to the organic compounds represented by the general formulas (G1) to (G9) are not limited to the specific examples of the substituents described below.

[0120] An aryl group having 6 to 30 carbon atoms forming a ring refers to a monovalent group obtained by removing one hydrogen atom from a monocyclic or polycyclic aromatic hydrocarbon having a total number of carbon atoms forming a ring of 6 to 30. Here, polycyclic aromatic hydrocarbon refers to both aromatic hydrocarbons in which multiple rings are linked via bonds, such as biphenyl, and condensed polycyclic aromatic hydrocarbons in which multiple rings are condensed, such as naphthalene. Specific examples of aryl groups having 6 to 30 carbon atoms forming a ring include a phenyl group, a naphthyl group (1-naphthyl group, 2-naphthyl group), a biphenylyl group (biphenyl-2-yl group, biphenyl-3-yl group, biphenyl-4-yl group), a fluorenyl group, a phenanthryl group, an anthryl group, a phenylnaphthyl group, a naphthylphenyl group, a fluoranthenyl group, a terphenylyl group, a quaterphenylyl group, a 9,9'-diphenylfluorenyl group, a 9,9'-spirobifluorenyl group, and a binaphthylphenyl group. When an aryl group having 6 to 30 carbon atoms forming a ring has a substituent, specific examples of the substituent include an alkyl group having 1 to 6 carbon atoms and an alkyl group having 2 to 6 carbon atoms. It is more preferable that an aryl group having 6 to 30 carbon atoms forming a ring has deuterium. Furthermore, when an aryl group having 6 or more and 30 or less carbon atoms forming a ring has a substituent, it is more preferable that the substituent has a deuterium atom.

[0121] An alkyl group having 1 to 6 carbon atoms refers to a monovalent group formed by removing one hydrogen atom from an alkane having 1 to 6 carbon atoms. Specific examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, and a 2,3-dimethylbutyl group. It is more preferable that the alkyl group having 1 to 6 carbon atoms contains deuterium.

[0122] <Specific examples of organic compounds> Next, specific examples of the organic compound represented by the above general formula are shown below: However, the organic compound represented by the above general formula is not limited to the specific examples shown below.

[0123] Specific examples of the organic compounds represented by the general formulas (G1) to (G3) include organic compounds represented by the structural formulas (100) to (136). Note that the organic compounds represented by the general formulas (G1) to (G3) are not limited to the organic compounds represented by the structural formulas (100) to (136).

[0124] [ka]

[0125] [ka]

[0126] [ka]

[0127] [ka]

[0128] Specific examples of organic compounds represented by general formulas (G4) to (G9) include organic compounds represented by structural formulas (200) to (287). Note that the organic compounds represented by general formulas (G4) to (G9) are not limited to the organic compounds represented by structural formulas (200) to (287). The organic compounds represented by structural formulas (200) to (287) are also specific examples of organic compounds represented by the above general formulas (G1) to (G3).

[0129] [ka]

[0130] [ka]

[0131] [ka]

[0132] [ka]

[0133] [ka]

[0134] [ka]

[0135] [ka]

[0136] [ka]

[0137] [ka]

[0138] <Synthesis method> A method for synthesizing an organic compound represented by the following general formula (G5) will be described below.

[0139] [ka]

[0140] In general formula (G5), Ar 1 is a group represented by any one of general formulas (Ar-1) to (Ar-4), and R 1 ~R 7 Each independently represents hydrogen (including deuterium). 15 ~R 50 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G5) has two or more deuterium atoms.

[0141] In the organic compound represented by general formula (G5), two Ar 1 are the same groups, and two R 1 are the same groups, and two R 2 are the same groups, and two R 3 are the same groups, and two R 4 are the same groups, and two R 5 are the same groups, and two R 6 are the same groups, and two R 7 are the same group as each other.

[0142] First, a 9-aryl-9H-carbazole compound (compound 3) can be obtained by coupling an aryl halide compound (compound 1) with a 9H-carbazole compound (compound 2) according to the synthesis scheme (a-1).

[0143] [ka]

[0144] In the synthetic scheme (a-1), Ar 1 , R 1 ~R 7 In the synthesis scheme (a-1), Q 1 represents chlorine, bromine, iodine or a trifluoromethanesulfonyl group.

[0145] In the synthesis scheme (a-1), when the Buchwald-Hartwig reaction is carried out using a palladium catalyst, palladium compounds such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(0), and allylpalladium(II) chloride (dimer) can be used, along with ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, and di(tert-butyl)(1-methyl-2,2-diphenylcyclopropyl)phosphine (abbreviation: cBRIDP). In this reaction, an organic base such as sodium tert-butoxide or an inorganic base such as potassium carbonate, cesium carbonate, or sodium carbonate can be used. In this reaction, a phase transfer catalyst such as 18-crown-6 can also be used. In this reaction, toluene, xylene, benzene, tetrahydrofuran, dioxane, or the like can be used as a solvent. Reagents that can be used in this reaction are not limited to the above-mentioned reagents.

[0146] In addition, in the synthesis scheme (a-1), the Ullmann reaction can also be carried out using copper or a copper compound and nickel or a nickel compound. Examples of the base used include inorganic bases such as potassium carbonate. Examples of solvents that can be used in this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone (DMPU), N-methylpyrrolidone, toluene, xylene, and benzene. In the Ullmann reaction, a reaction temperature of 100°C or higher allows the desired product to be obtained in a shorter time and with a higher yield, so it is preferable to use DMPU or xylene, which have high boiling points. Furthermore, a reaction temperature of 150°C or higher is even more preferable, so DMPU is more preferably used. The reagents that can be used in this reaction are not limited to those listed above.

[0147] Next, according to the synthesis scheme (a-2), a 9-aryl-9H-carbazole compound (compound 3) is reacted with a halogenating reagent (compound 4) to obtain a 9-aryl-9H-carbazole halide compound (compound 5).

[0148] [ka]

[0149] In the synthetic scheme (a-2), Ar 1 , R 1 ~R 7 In the synthesis scheme (a-2), Q 2 represents chlorine, bromine, or iodine. 2 can also be a trifluoromethanesulfonyl group.

[0150] In the synthesis scheme (a-2), examples of halogenating reagents that can be used include N-chlorosuccinimide, N-bromosuccinimide, N-iodosuccinimide, bromine, etc. Reagents that can be used in this reaction are not limited to the above-mentioned reagents.

[0151] Next, the target bicarbazole compound (G5) can also be obtained by homo-coupling 9-aryl-9H-carbazole compounds (compounds 3) with each other according to the synthesis scheme (a-3).

[0152] [ka]

[0153] In the synthetic scheme (a-3), Ar 1 , R 1 ~R 7 and Q 2 is omitted because it is the same as that shown above.

[0154] In synthetic scheme (a-3), when performing the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide, the same reaction conditions as in synthetic schemes (a-1) and (a-2) can be used.

[0155] Next, according to the synthesis scheme (a-4), a 9-aryl-9H-carbazole halide compound (compound 5) can be reacted with a borylation reagent (compound 6) to obtain a 9-aryl-9H-carbazole boryl compound (compound 7).

[0156] [ka]

[0157] In the synthetic scheme (a-5), Ar 1 , R 1 ~R 7 and Q 2 is omitted because it is the same as that shown above.

[0158] In the synthetic scheme (a-5), R 9 , R 10 each independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms; R 9 and R 10may be bonded to each other to form a ring, and in this case, examples of the boron compound include pinacolborane.

[0159] In the synthesis scheme (a-5), instead of a borylation reagent, an organometallic reagent or the like may be used to convert compound 7 into an organoaluminum, organozirconium, organozinc, or organotin compound.

[0160] Next, according to synthetic scheme (a-5), the target bicarbazole compound (G5) can be obtained by cross-coupling a 9-aryl-9H-carbazole boryl compound (compound 7) with a 9-aryl-9H-carbazole halide compound (compound 5). When synthesis is performed according to synthetic scheme (a-5), the homo-coupled product of compound 7 and the homo-coupled product of compound 5, which are produced in small amounts in the coupling reaction, both become the target compound (G5). Therefore, by synthesizing according to synthetic scheme (a-5), it is possible to obtain the target compound with high purity, even if by-products, which are homo-coupled products of the two raw materials, are produced.

[0161] [ka]

[0162] In the synthetic scheme (a-5), Ar 1 , R 1 ~R 7 , R 9 , R 10 and Q 2 is omitted because it is the same as that shown above.

[0163] In the synthesis scheme (a-5), for example, palladium(II) acetate, tetrakis(triphenylphosphine)palladium(0), or bis(triphenylphosphine)palladium(II) dichloride can be used as the palladium catalyst. Also, for example, tri(ortho-tolyl)phosphine, triphenylphosphine, or tricyclohexylphosphine can be used as the ligand of the palladium catalyst.

[0164] In the synthesis scheme (a-5), an organic base such as sodium tert-butoxide or an inorganic base such as potassium carbonate or sodium carbonate can be used as the base.

[0165] In addition, in the synthesis scheme (a-5), a mixed solvent of toluene and water, a mixed solvent of xylene and water, a mixed solvent of benzene and water, a mixed solvent of ethylene glycol dimethyl ether, or a mixed solvent of water and an ether such as 1,4-dioxane can be used as the reaction solvent. The more soluble the boronic acid or boryl compound is in the aqueous phase, the faster the reaction rate and the higher the yield can be expected to be. Therefore, adding water is preferred, but when an ether is used as the solvent, it is expected that the same effect can be obtained without adding water.

[0166] In addition, in the synthesis scheme (a-5), a mixed solvent of toluene, water, and an alcohol such as ethanol, a mixed solvent of xylene, water, and an alcohol such as ethanol, a mixed solvent of benzene, water, and an alcohol such as ethanol, etc. can be used as the reaction solvent. In particular, a mixed solvent of toluene and water, a mixed solvent of toluene, water, and ethanol, or a mixed solvent of an ether such as ethylene glycol dimethyl ether and water is preferred.

[0167] Compound (G5) can also be synthesized according to the following synthesis scheme (a-6): the aryl halide compound (compound 1) and the bicarbazole compound (compound 8) are coupled together according to synthesis scheme (a-6) to obtain the desired bicarbazole compound (G5).

[0168] [ka]

[0169] In the synthetic scheme (a-6), Ar 1 , R 1 ~R 7 and Q 1is omitted because it is the same as that shown above.

[0170] In the synthesis scheme (a-6), when the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide is performed, the same reaction conditions as in the synthesis scheme (a-1) can be used.

[0171] The above is the description of the synthesis method for the general formula (G5). Note that the synthesis method for the organic compound represented by the general formula (G5) is not limited to the above synthesis schemes (a-1) to (a-6).

[0172] In the light-emitting device of one embodiment of the present invention, when two or more organic compounds are used as the host material 118, in addition to the organic compounds represented by any of the general formulas (G1) to (G9), an organic compound capable of forming an exciplex with the organic compound is preferably used as the host material 118. For example, as shown in FIG. 1B , when the light-emitting layer 113 includes two organic compounds (organic compound 118_1 and organic compound 118_2) as the host material 118, it is preferable to use an organic compound represented by any of the general formulas (G1) to (G9) as the organic compound 118_1 and an organic compound capable of forming an exciplex with the organic compound as the organic compound 118_2.

[0173] As the organic compound capable of forming an exciplex with the organic compound represented by any one of the general formulae (G1) to (G9), an electron-transporting material is preferably used. Examples of the electron-transporting material include compounds having a π-electron-deficient heteroaromatic ring skeleton, such as nitrogen-containing heteroaromatic compounds, zinc-based metal complexes, and aluminum-based metal complexes. Examples of compounds having a π-electron-deficient heteroaromatic ring skeleton include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of zinc-based metal complexes and aluminum-based metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand. These will be described in detail later.

[0174] In the above, examples have been shown in which the organic compounds represented by the general formulas (G1) to (G9) are used as host materials in the light-emitting layer of light-emitting devices. However, the organic compounds can also be used in layers other than the light-emitting layer 113 in light-emitting devices. The organic compounds represented by the general formulas (G1) to (G9) have high hole-transporting properties, and therefore, by using them in light-emitting devices, light-emitting devices with high luminous efficiency and low-voltage operation can be achieved. Furthermore, the organic compounds represented by the general formulas (G1) to (G9) have high thermal and electrochemical stability, and therefore, by using them in light-emitting devices, degradation of the light-emitting device can be suppressed and reliability can be improved. Specifically, the organic compounds represented by the general formulas (G1) to (G9) can be used in hole-transporting layers, capping layers, and the like in addition to the light-emitting layer.

[0175] Note that the compound described in this embodiment can be used in appropriate combination with any of the structures described in other embodiments.

[0176] (Embodiment 2) In this embodiment mode, a structure of a light-emitting device using the organometallic compound described in Embodiment Mode 1 will be described with reference to FIGS.

[0177] <Basic structure of light-emitting devices> The basic structure of a light-emitting device will be described. Figure 2(A) shows a light-emitting device having a structure (single structure) in which an organic compound layer including a light-emitting layer is disposed between a pair of electrodes. Specifically, the light-emitting device has a structure in which an organic compound layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0178] 2B shows a light-emitting device having a stacked structure (tandem structure) in which a plurality of organic compound layers (103a, 103b) (two layers in FIG. 2B) are disposed between a pair of electrodes and a charge generation layer 106 is disposed between the organic compound layers. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0179] The charge generation layer 106 has a function of injecting electrons into one organic compound layer (103a or 103b) and injecting holes into the other organic compound layer (103b or 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in FIG. 2B, when a voltage is applied to the first electrode 101 so that the potential thereof is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a and holes are injected into the organic compound layer 103b.

[0180] From the viewpoint of light extraction efficiency, the charge generation layer 106 is preferably transparent to visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). The charge generation layer 106 functions even if it has lower conductivity than the first electrode 101 and the second electrode 102.

[0181] FIG. 2C shows a stacked structure of the organic compound layer 103 of the light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked over the first electrode 101. The light-emitting layer 113 may have a stacked structure of a plurality of light-emitting layers emitting different light colors. For example, a light-emitting layer containing a red light-emitting substance, a light-emitting layer containing a green light-emitting substance, and a light-emitting layer containing a blue light-emitting substance may be stacked, or a layer containing a carrier-transporting material may be interposed between the light-emitting layers. Alternatively, a light-emitting layer containing a yellow light-emitting substance and a light-emitting layer containing a blue light-emitting substance may be combined. However, the stacked structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which multiple light-emitting layers emitting the same light-emitting color are stacked. For example, a first light-emitting layer containing a blue light-emitting substance and a second light-emitting layer containing a blue light-emitting substance are stacked, or a layer containing a carrier-transporting material is interposed between the layers. A structure in which multiple light-emitting layers emitting the same light-emitting color are stacked may have higher reliability than a single-layer structure. Even in a tandem structure having multiple organic compound layers as shown in FIG. 2B, each organic compound layer is stacked in order from the anode side as described above. When the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layers 103 is reversed. Specifically, the structure is such that 111 on the first electrode 101, which is a cathode, is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0182] The light-emitting layer 113 included in the organic compound layers (103, 103a, 103b) each contains a light-emitting substance and an appropriate combination of multiple substances, and can be configured to emit fluorescent or phosphorescent light of a desired emission color. The light-emitting layer 113 may also have a stacked structure of layers that emit different light colors. In this case, different materials may be used for the light-emitting substance and other substances used in each stacked light-emitting layer. Alternatively, a structure in which different light-emitting colors are emitted from the multiple organic compound layers (103a, 103b) shown in Figure 2(B) may also be used. In this case, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0183] In addition, in a light-emitting device according to one embodiment of the present invention, for example, the first electrode 101 shown in FIG. 2C may be a reflective electrode, the second electrode 102 may be a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure may be formed. This allows light emitted from the light-emitting layer 113 included in the organic compound layer 103 to resonate between the two electrodes, thereby enhancing the intensity of light emitted from the second electrode 102. Therefore, high definition can be easily achieved. Furthermore, the intensity of light emitted from a specific wavelength in the front direction can be enhanced, thereby reducing power consumption.

[0184] When the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is an integer of 1 or greater) or in the vicinity thereof, for the wavelength λ of light obtained from the light-emitting layer 113.

[0185] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to be (2m'+1)λ / 4 (where m' is an integer of 1 or greater) or close to that. Note that the light-emitting region here refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0186] By performing such optical adjustment, the spectrum of the specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.

[0187] In the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective regions of the first electrode 101 and the second electrode 102, the above-mentioned effect can be sufficiently achieved by assuming any position of the first electrode 101 and the second electrode 102 as the reflective region. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which desired light is obtained can be strictly defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained, the above-mentioned effect can be sufficiently achieved by assuming any position of the first electrode 101 as the reflective region and any position of the light-emitting layer from which desired light is obtained as the light-emitting region.

[0188] The light-emitting device shown in Figure 2(D) has a tandem structure. The tandem structure allows the device to emit light with high brightness. Furthermore, the tandem structure can reduce the current required to obtain the same brightness compared to a single structure, thereby improving reliability. Furthermore, power consumption can be reduced.

[0189] The light-emitting device shown in FIG. 2(E) is an example of the tandem-structure light-emitting device shown in FIG. 2(B). As shown in the figure, the light-emitting device has a structure in which three organic compound layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) sandwiched between them. Each of the three organic compound layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be red, green, or yellow, and the light-emitting layer 113c can be blue. Alternatively, the light-emitting layer 113a can be red, the light-emitting layer 113b can be blue, green, or yellow, and the light-emitting layer 113c can be red.

[0190] In the light-emitting device according to one embodiment of the present invention, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transmitting / semi-reflective electrode). When the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In addition, when the semi-transmitting / semi-reflective electrode is used, the visible light reflectance of the semi-transmitting / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 -2 It is preferable to set it to Ωcm or less.

[0191] In the above-described light-emitting device according to one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (a reflective electrode), the reflectivity of the reflective electrode for visible light is set to 40% to 100%, preferably 70% to 100%. -2 It is preferable to set it to Ωcm or less.

[0192] <Specific structure of light-emitting device> Next, a specific structure of a light-emitting device according to one embodiment of the present invention will be described. Here, a tandem structure will be described with reference to FIG. 2D. The single-structure light-emitting devices shown in FIGS. 2A and 2C also have the same organic compound layer structure. When the light-emitting device shown in FIG. 2D has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive and semi-reflective electrode. Therefore, a single or multiple desired electrode materials can be used to form a single layer or a stacked layer. The second electrode 102 is formed by selecting an appropriate material after the organic compound layer 103b is formed.

[0193] <Light-emitting device materials> <Light-emitting layer> The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting substance. Light-emitting substances that can be used for the light-emitting layers (113, 113a, 113b) include substances that emit light of colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When multiple light-emitting layers are provided, different light-emitting substances can be used for each light-emitting layer to produce different light-emitting colors (for example, white light emission obtained by combining complementary light-emitting colors). Furthermore, a stacked structure in which each light-emitting layer contains different light-emitting substances may be used.

[0194] The light-emitting layers (113, 113a, and 113b) may contain one or more organic compounds (host materials or the like) in addition to a light-emitting substance (guest material). Specifically, the organic compounds described in Embodiment 1 are preferably used. This can improve the reliability of the light-emitting device of one embodiment of the present invention.

[0195] When a plurality of host materials are used in the light-emitting layers (113, 113a, and 113b), the light-emitting layer 113 can have the structure described with reference to FIG. 1B in Embodiment 1, for example. In the light-emitting layer 113, the host material 118 is present in the largest amount by weight, and the guest material 119 is dispersed in the host material 118. The T1 level of the host material 118 (organic compound 118_1 and organic compound 118_2) of the light-emitting layer 113 is preferably higher than the T1 level of the guest material (guest material 119) of the light-emitting layer 113.

[0196] As the organic compound 118_1, a material having a higher electron transporting property than a hole transporting property can be used. -6 cm 2 Preferably, the material has an electron mobility of 1 / Vs or higher. Examples of materials that readily accept electrons (materials with electron transport properties) include compounds having a π-electron-deficient heteroaromatic ring skeleton, such as nitrogen-containing heteroaromatic compounds, and zinc-based metal complexes or aluminum-based metal complexes. Examples of compounds having a π-electron-deficient heteroaromatic ring skeleton include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of zinc-based metal complexes or aluminum-based metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0197] Specific examples include metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq). In addition, metal complexes having oxazole- or thiazole-based ligands, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), can also be used. In addition to metal complexes, we have also developed 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole (abbreviation: CO12), and other compounds. Heterocyclic compounds such as 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-[3-(3,9'-bi-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzCzPDBq), 4,6-bis[ 3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), etc. Heterocyclic compounds having a diazine skeleton, such as heterocyclic compounds having a triazine skeleton, 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), heterocyclic compounds having a pyridine skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 4,Heteroaromatic compounds such as 4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs) can also be used. Among the heterocyclic compounds mentioned above, heterocyclic compounds having a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton, or a pyridine skeleton are preferred due to their stability and high reliability. Furthermore, heterocyclic compounds having such skeletons have high electron transport properties and contribute to reduced driving voltage. Polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances mentioned here are mainly 1×10, -6 cm 2 It is to be noted that any substance other than those mentioned above may be used as long as it has a higher electron transporting property than a hole transporting property.

[0198] The organic compound 118_2 is preferably a combination capable of forming an exciplex with the organic compound 118_1. Specifically, it preferably has a highly donor skeleton such as a π-electron-rich heteroaromatic ring skeleton or an aromatic amine skeleton. Examples of compounds having a π-electron-rich heteroaromatic ring skeleton include heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives. In this case, it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) so that the emission peak of the exciplex formed by the organic compound 118_1 and the organic compound 118_2 overlaps with the triplet MLCT (Metal to Ligand Charge Transfer) transition absorption band of the guest material 119 (phosphorescent compound), more specifically, the absorption band located at the longest wavelength. This allows for a light-emitting device with dramatically improved luminous efficiency. However, when a thermally activated delayed fluorescence material is used instead of a phosphorescent compound, the absorption band located at the longest wavelength is preferably a singlet absorption band.

[0199] The organic compound 118_2 is preferably any of the organic compounds described in Embodiment 1. This can improve the reliability of the light-emitting device of one embodiment of the present invention. Alternatively, the organic compound 118_2 can be any of the following hole-transporting materials.

[0200] As the hole transporting material, a material having a higher hole transporting property than electron transporting property can be used. -6 cm 2 It is preferable that the hole transport material has a hole mobility of 1 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. can be used. The hole transport material may also be a polymer compound.

[0201] Specific examples of these materials with high hole transport properties include aromatic amine compounds such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0202] Specific examples of carbazole derivatives include 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), and 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTP N2), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), and the like can be mentioned.

[0203] Other carbazole derivatives that can be used include 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), and 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.

[0204] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. In addition, pentacene, coronene, etc. can also be used. Thus, 1×10 -6 cm 2 It is more preferable to use an aromatic hydrocarbon having a hole mobility of 14 to 42 carbon atoms and having a hole mobility of 14 to 42 carbon atoms.

[0205] The aromatic hydrocarbon may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl skeleton include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

[0206] Alternatively, polymer compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used.

[0207] Furthermore, examples of materials with high hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), ... H-fluoren]-2-yl)-N,N'N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviated as PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviated as PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine amine (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(9,9-spirobi[9H-fluorene]-2-amine Spirobi[9H-fluoren]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,Aromatic amine compounds such as 7-diamine (abbreviation: YGA2F) can be used. In addition, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenylfuran) (phenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,6-di(9H-carbazol-9-yl)-9-phenyl-9H-carbazole (abbreviation: PhCzGI), 2,8-di(9H-carbazol-9-yl)dibenzothiophene (abbreviation: CzDBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-I) Examples of compounds that can be used include amine compounds such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and 4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, and phenanthrene compounds. Among the above-mentioned compounds, compounds having a pyrrole skeleton, a furan skeleton, a thiophene skeleton, or an aromatic amine skeleton are preferred because they are stable and reliable. Furthermore, compounds having such skeletons have high hole transport properties and contribute to reducing driving voltage.

[0208] When an organic compound having an electron-transporting property is used as the organic compound 118_1 and an organic compound having a hole-transporting property is used as the organic compound 118_2, it is preferable that the HOMO level of the organic compound having a hole-transporting property is equal to or higher than the HOMO level of the organic compound having an electron-transporting property. Also, it is preferable that the LUMO level of the organic compound having a hole-transporting property is equal to or higher than the LUMO level of the organic compound having an electron-transporting property, because an exciplex can be formed more efficiently.

[0209] The values ​​of the HOMO level and the LUMO level can be determined by cyclic voltammetry (CV) measurement.

[0210] In cyclic voltammetry (CV) measurements, the values ​​of the HOMO and LUMO levels (E) are determined by the oxidation peak potential (E pa ), and reduction peak potential (E pc ) can be calculated based on the above. In the measurement, the HOMO level can be obtained by scanning the potential in the positive direction, and the LUMO level can be obtained by scanning the potential in the negative direction. The scan rate in the measurement should be 0.1 V / s.

[0211] Specifically, the oxidation peak potential (E pa ), and reduction peak potential (E pc ) to obtain the standard redox potential (E o )(=(E pa +E pc ) / 2) and calculate the potential energy (E x ) to obtain the values ​​of the HOMO and LUMO levels (E) (=E x -E o ) can be calculated respectively.

[0212] The above shows the case where a reversible redox wave is obtained. However, when an irreversible redox wave is obtained, the oxidation peak potential (E pa) and subtracted a fixed value (0.1 eV) to determine the reduction peak potential (E pc ) and the standard redox potential (E o ) to one decimal place. Also, to calculate the LUMO level, the reduction peak potential (E pc ) plus a certain value (0.1 eV) is taken as the oxidation peak potential (E pa ) and the standard redox potential (E o ) to one decimal place.

[0213] The guest material 119 that can be used in the light-emitting layers (113, 113a, 113b) is not particularly limited, and a light-emitting substance that converts singlet excitation energy into light emission in the visible light region, or a light-emitting substance that converts triplet excitation energy into light emission in the visible light region can be used.

[0214] <Light-emitting material that converts singlet excitation energy into light> Examples of luminescent materials that convert singlet excitation energy into luminescence and can be used in the luminescent layers (113, 113a, 113b) include the following fluorescent substances (fluorescent luminescent materials): pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), and the like.

[0215] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyl-4,4'-stilbenediamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)phenyl N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl) N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), and the like can be used.

[0216] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[ 4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinit (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhA FD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAPrn-0 3, N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviated as 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0217] <Light-emitting material that converts triplet excitation energy into light> Next, examples of luminescent materials that can be used in the light-emitting layer 113 and convert triplet excitation energy into luminescence include phosphorescent materials and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0218] A phosphorescent material is a compound that exhibits phosphorescence but does not exhibit fluorescence at a temperature range from low temperatures (e.g., 77 K) to room temperature (i.e., 77 K to 313 K). The phosphorescent material preferably contains a metal element with a large spin-orbit interaction, such as an organometallic complex, a metal complex (platinum complex), or a rare-earth metal complex. Specifically, a transition metal element is preferred, and a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)) is particularly preferred. Among these, iridium is preferred because it can increase the transition probability associated with the direct transition between the singlet ground state and the triplet excited state.

[0219] <Phosphorescent materials (400 nm or more but less than 580 nm: blue or green)> Examples of phosphorescent materials that exhibit blue or green light and have an emission spectrum with a peak wavelength of 400 nm or more and less than 580 nm include the following materials.

[0220] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl organometallic complexes containing a 4H-triazole ring, such as tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), Organometallic complexes containing a 1H-triazole ring, such as [Ir(Mptz1-mp)3]tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-diisopropyl organometallic complexes containing an imidazole ring, such as tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), and bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’] Organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviation: FIr(acac)), are also included.

[0221] <Phosphorescent material (490nm or more but less than 590nm: green or yellow)> Examples of phosphorescent materials that exhibit green or yellow color and have an emission spectrum with a peak wavelength of 490 nm or more and less than 590 nm include the following materials.

[0222] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [I r(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), organometallic iridium complexes containing a pyrimidine ring, such as (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes containing a pyrazine ring, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], [2-d3- Methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2- [5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviated as Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2- Organometallic iridium complexes containing a pyridine ring, such as bis(2,4-diphenyl-1,3-oxazolato-N,C)bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), tris{2-[5-(methyl-d3)-4-phenyl-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5m4dppy-d3)3), 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2’) iridium(III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]).

[0223] <Phosphorescent materials (570 nm or more but less than 750 nm: yellow or red)> Examples of phosphorescent materials that exhibit yellow or red color and have an emission spectrum with a peak wavelength of 570 nm or more and less than 750 nm include the following materials.

[0224] For example, pyrimidinato]iridium(III) such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic complexes containing an imidine ring, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κN). 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ) 2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ )iridium(III) (abbreviation: [Ir(dpq)2(acac)]), organometallic complexes with a pyrazine ring such as (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2 Examples of such complexes include organometallic complexes with a pyridine ring, such as (O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes, such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: [PtOEP]), and rare earth metal complexes, such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0225] ≪TADF material≫ The following materials can be used as TADF materials. TADF materials are materials that have a small difference between the S1 level and the T1 level (preferably 0.20 eV or less), can upconvert a triplet excited state to a singlet excited state with a small amount of thermal energy (reverse intersystem crossing), and efficiently emit light (fluorescence) from the singlet excited state. Conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level of 0.00 eV or more and 0.20 eV or less, preferably 0.00 eV or more and 0.10 eV or less. Delayed fluorescence in TADF materials refers to light emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifetime. Its lifetime is 1×10 -6 seconds or more, or 1×10 -3 More than a second.

[0226] The TADF material can also be used as an electron transporting material, a hole transporting material, or a host material.

[0227] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as proflavine, eosin, etc. Also included are metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviation: SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)), etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0228] [ka]

[0229] Other examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxy) 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9, 9-Dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Heteroaromatic compounds having a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound, such as 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0230] In addition, a substance in which a π-electron-rich heteroaromatic compound and a π-electron-deficient heteroaromatic compound are directly bonded is particularly preferable because the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-deficient heteroaromatic compound are both strong, thereby reducing the energy difference between the singlet excited state and the triplet excited state. Furthermore, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may also be used as the TADF material. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress efficiency decline in light-emitting devices in the high-brightness range.

[0231] [ka]

[0232] In addition to the above, examples of materials capable of converting triplet excitation energy into luminescence include nanostructures of transition metal compounds having a perovskite structure. Nanostructures of metal halide perovskites are particularly preferred. Nanoparticles and nanorods are preferred as such nanostructures.

[0233] The light-emitting layer 113 can also be configured with two or more layers. For example, when the light-emitting layer 113 is formed by stacking a first light-emitting layer and a second light-emitting layer in this order from the hole-transporting layer side, a substance having hole-transporting properties may be used as a host material for the first light-emitting layer, and a substance having electron-transporting properties may be used as a host material for the second light-emitting layer. The light-emitting materials of the first light-emitting layer and the second light-emitting layer may be the same or different, and may be materials that emit light of the same color or different colors. By using light-emitting materials that emit light of different colors in the two light-emitting layers, multiple light emissions can be obtained simultaneously. In particular, it is preferable to select light-emitting materials for each light-emitting layer so that the light emitted by the two light-emitting layers becomes white.

[0234] The light-emitting layer 113 may contain materials other than the host material 118 and the guest material 119 .

[0235] The light-emitting layer 113 can be formed by a vapor deposition method (including a vacuum deposition method), an inkjet method, a coating method, gravure printing, etc. In addition to the materials described above, the light-emitting layer 113 may contain inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.).

[0236] <Hole injection layer> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101, which is an anode, and the charge generation layer (106, 106a, 106b) into the organic compound layer (103, 103a, 103b), and is a layer that contains an organic acceptor material and a material with high hole injection properties.

[0237] The hole injection layer (111, 111a, 111b) functions to promote hole injection by reducing the hole injection barrier from one of the pair of electrodes (the first electrode 101 or the second electrode 102). It is formed, for example, from a transition metal oxide, a phthalocyanine derivative, or an aromatic amine. Examples of transition metal oxides include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Examples of phthalocyanine derivatives include phthalocyanine and metal phthalocyanine. Examples of aromatic amines include benzidine derivatives and phenylenediamine derivatives. Polymer compounds such as polythiophene and polyaniline can also be used. A typical example is poly(ethylenedioxythiophene) / polystyrene sulfonic acid, which is a self-doped polythiophene.

[0238] The hole-injection layers (111, 111a, 111b) may be layers containing a composite material of a hole-transporting material and a material exhibiting electron-accepting properties. Alternatively, a stack of a layer containing an electron-accepting material and a layer containing a hole-transporting material may be used. Charges can be transferred between these materials in a steady state or under the presence of an electric field. Examples of electron-accepting materials include organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives. Specific examples include compounds having an electron-withdrawing group (halogen or cyano group), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN). Alternatively, transition metal oxides, such as oxides of metals from Groups 4 to 8, can be used. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle.

[0239] As the hole transporting material, a material having a higher hole transporting property than electron transporting property can be used. -6 cm 2 It is preferable that the material has a hole mobility of 1 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, and the like, which are listed as hole-transporting materials that can be used for the light-emitting layer 113, can be used. The hole-transporting material may also be a polymer compound.

[0240] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers containing a hole transport material, and the hole transport materials exemplified as the material for the hole injection layers (111, 111a, 111b) can be used. The hole transport layers (112, 112a, 112b) have the function of transporting holes injected into the hole injection layers (111, 111a, 111b) to the light-emitting layers (113, 113a, 113b), and therefore preferably have a HOMO level that is the same as or close to the HOMO level of the hole injection layers (111, 111a, 111b).

[0241] The hole transport material is 1×10 -6 cm 2 It is preferable that the material is a substance having a hole mobility of 1 / Vs or more. However, other substances may be used as long as they have a higher hole transporting property than electron transporting property. Note that the layer containing the substance having a high hole transporting property may be a single layer or may be a stack of two or more layers made of the above-mentioned substance. The organic compound described in Embodiment 1 has a high hole transporting property, so it can also be used for the hole transporting layer. This can improve the reliability of the light-emitting device.

[0242] ≪Electron transport layer≫ The electron transport layers (114, 114a, 114b) have a function of transporting electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) through the electron injection layers (115, 115a, 115b) to the light-emitting layer 113. As the electron transport material, a material having a higher electron transporting property than that of holes can be used, and the electron transporting property is 1×10 -6 cm 2 / Vs or more. As a compound that easily accepts electrons (a material having electron transport properties), a compound having a π-electron-deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound, or a metal complex, etc. can be used. Specific examples include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand, which are listed as electron transport materials that can be used in the light-emitting layer 113. Other examples include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. The electron transport materials can have a conductivity of 1×10 -6 cm 2 It is preferable that the electron transport layer is a substance having an electron mobility of 1 / Vs or higher. Note that other substances may be used as the electron transport layer as long as they have a higher electron transporting property than hole transporting property. The electron transport layer (114, 114a, 114b) may be a single layer or a stack of two or more layers made of the above substances.

[0243] Furthermore, a layer for controlling the movement of electron carriers may be provided between the electron transport layer (114, 114a, 114b) and the light-emitting layer (113, 113a, 113b). This layer is made by adding a small amount of a substance with high electron trapping properties to a material with high electron transport properties as described above, and by suppressing the movement of electron carriers, it becomes possible to adjust the carrier balance. Such a configuration is highly effective in suppressing problems (e.g., a reduction in device life) caused by electrons passing through the light-emitting layer.

[0244] ≪Electron injection layer≫ The electron injection layer (115, 115a, 115b) has a function of promoting electron injection by reducing the electron injection barrier from the second electrode 102, and can be made of, for example, a Group 1 metal, a Group 2 metal, or an oxide, halide, or carbonate thereof. Also, a composite material of the above-mentioned electron transport material and a material that exhibits electron donating properties can be used. Examples of materials that exhibit electron donating properties include Group 1 metals, Group 2 metals, or oxides thereof. Specific examples include lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF2), and lithium oxide (LiO x Alkali metals, alkaline earth metals, or compounds thereof such as fluoride (ErF3) can be used. Rare earth metal compounds such as erbium fluoride (ErF3) can also be used. Electrides can also be used for the electron injection layer 115. Examples of such electrides include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. Materials that can be used for the electron transport layers (114, 114a, 114b) can also be used for the electron injection layers (115, 115a, 115b).

[0245] The electron injection layer (115, 115a, 115b) may also be made of a composite material containing an organic compound and an electron donor (donor). Such composite materials have excellent electron injection and transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that is excellent at transporting the generated electrons. Specifically, the above-mentioned substances constituting the electron transport layer 114 (metal complexes, heteroaromatic compounds, etc.) can be used. The electron donor may be any substance that exhibits electron donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferred, such as lithium, sodium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides or alkaline earth metal oxides are preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. Organic compounds such as tetrathiafulvalene (TTF) can also be used.

[0246] The light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be formed by vapor deposition (including vacuum deposition), inkjet printing, coating, gravure printing, etc. In addition to the materials described above, the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be made of inorganic compounds such as quantum dots or polymeric compounds (oligomers, dendrimers, polymers, etc.).

[0247] Quantum dots may be colloidal quantum dots, alloy quantum dots, core-shell quantum dots, core quantum dots, etc. Quantum dots containing elements from groups 2 and 16, 13 and 15, 13 and 17, 11 and 17, or 14 and 15 may also be used. Quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), and aluminum (Al) may also be used.

[0248] <Pair of electrodes> The first electrode 101 and the second electrode 102 function as an anode or a cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, or a mixture or stack of these materials.

[0249] It is preferable that one of the first electrode 101 and the second electrode 102 is formed of a conductive material that has a light-reflecting function. Examples of the conductive material include aluminum (Al) and alloys containing Al. Examples of alloys containing Al include alloys containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as alloys containing Al and Ti, or Al, Ni, and La. Aluminum has low resistance and high light reflectivity. Furthermore, aluminum is abundant in the earth's crust and inexpensive, so the use of aluminum can reduce the production costs of light-emitting devices. Alternatively, silver (Ag) or an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au)) may be used. Examples of alloys containing silver include alloys containing silver, palladium, and copper, alloys containing silver and copper, alloys containing silver and magnesium, alloys containing silver and nickel, alloys containing silver and gold, and alloys containing silver and ytterbium. Other transition metals that can be used include tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium.

[0250] Furthermore, light emitted from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, at least one of the first electrode 101 and the second electrode 102 is preferably formed from a conductive material that has a light-transmitting function. The conductive material has a visible light transmittance of 40% or more and 100% or less, preferably 60% or more and 100% or less, and a resistivity of 1×10 -2 Examples include conductive materials with a resistance of Ω·cm or less.

[0251] The first electrode 101 and the second electrode 102 may be formed of a conductive material that has both a light transmitting and a light reflecting function. The conductive material has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1×10 -2 Examples of suitable conductive materials include those with a resistivity of Ω·cm or less. For example, the conductive layer can be formed using one or more conductive metals, alloys, conductive compounds, etc. Specifically, metal oxides such as indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide (abbreviated as ITSO), indium zinc oxide, titanium-containing indium tin oxide, indium titanium oxide, and indium oxide containing tungsten oxide and zinc oxide can be used. Alternatively, a thin metal film that is light-transmitting (preferably, a thickness of 1 nm to 30 nm) can be used. Examples of suitable metals include Ag, and alloys such as Ag and Al, Ag and Mg, Ag and Au, and Ag and Yb.

[0252] In this specification and the like, the material having the function of transmitting light may be any material that has the function of transmitting visible light and is conductive, and includes, for example, oxide conductors such as ITO as described above, as well as oxide semiconductors or organic conductors containing organic substances. Examples of organic conductors containing organic substances include composite materials obtained by mixing an organic compound with an electron donor (donor), and composite materials obtained by mixing an organic compound with an electron acceptor. In addition, inorganic carbon-based materials such as graphene may also be used. The resistivity of the material is preferably 1×10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0253] Alternatively, one or both of the first electrode 101 and the second electrode 102 may be formed by stacking a plurality of the above materials.

[0254] Furthermore, in order to improve light extraction efficiency, a material having a higher refractive index than an electrode having a light-transmitting function may be formed in contact with the electrode. Such a material may be any material that transmits visible light, and may or may not be conductive. Examples of such a material include oxide semiconductors and organic materials, as well as the oxide conductors described above. Examples of organic materials include the materials exemplified for the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer. Inorganic carbon-based materials or thin metal films that transmit light may also be used, and multiple layers of several nanometers to several tens of nanometers thick may be stacked.

[0255] When the first electrode 101 or the second electrode 102 functions as a cathode, it is preferable that the electrode be made of a material with a small work function (3.8 eV or less). For example, elements belonging to Group 1 or 2 of the periodic table (alkali metals such as lithium, sodium, and cesium, alkaline earth metals such as calcium and strontium, magnesium, etc.), alloys containing these elements (e.g., Ag and Mg, Al and Li), rare earth metals such as europium (Eu) and Yb, alloys containing these rare earth metals, alloys containing aluminum and silver, etc. can be used.

[0256] When the first electrode 101 or the second electrode 102 is used as an anode, it is preferable to use a material with a large work function (4.0 eV or more).

[0257] The first electrode 101 and the second electrode 102 may be a laminate of a conductive material having a light-reflecting function and a conductive material having a light-transmitting function. In this case, the first electrode 101 and the second electrode 102 are preferable because they can adjust the optical path so that light of a desired wavelength from each light-emitting layer can be resonated and the light of that wavelength can be intensified.

[0258] The first electrode 101 and the second electrode 102 can be formed by any suitable method, such as sputtering, vapor deposition, printing, coating, MBE (Molecular Beam Epitaxy), CVD, pulsed laser deposition, or ALD (Atomic Layer Deposition).

[0259] <Charge generation layer> The charge generation layer 106 has a function of injecting electrons into the organic compound layer 103a and injecting holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be a structure in which an electron acceptor is added to a hole transporting material (also referred to as a P-type layer), or a structure in which an electron donor is added to an electron transporting material (also referred to as an electron injection buffer layer). Alternatively, both of these structures may be stacked. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using the above-mentioned materials, it is possible to suppress an increase in driving voltage when organic compound layers are stacked.

[0260] When the charge generation layer 106 has a structure in which an electron acceptor is added to a hole-transporting material that is an organic compound (a P-type layer), the material described in this embodiment can be used as the hole-transporting material. Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples of the electron acceptor include oxides of metals that belong to Groups 4 to 8 of the periodic table. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. The acceptor materials described above may also be used. Materials for the P-type layer may be mixed together to form a mixed film, or single films containing each material may be stacked.

[0261] When the charge generation layer 106 has a structure in which an electron donor is added to an electron transporting material (electron injection buffer layer), the material described in this embodiment can be used as the electron transporting material. The electron donor can be an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Groups 2 and 13 of the periodic table, or an oxide or carbonate thereof. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (LiO), cesium carbonate, or the like is preferably used. An organic compound such as tetrathianaphthacene can also be used as the electron donor.

[0262] When an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties and has the function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer is −5.0 eV or higher, preferably −5.0 eV or higher and −3.0 eV or lower. Note that the substance having electron transport properties used in the electron relay layer is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0263] Although FIG. 2D shows a structure in which two organic compound layers 103 are stacked, a stack structure of three or more organic compound layers may be used by providing a charge generation layer between different organic compound layers.

[0264] <Cap layer> Although not shown in FIGS. 2A to 2E, a capping layer may be provided on the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the capping layer. By providing the capping layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 can be improved.

[0265] Specific examples of materials that can be used for the capping layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc) and 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II). The organic compounds described in the first embodiment can also be used for the capping layer. This can improve the reliability of the light-emitting device.

[0266] <Substrate> The light-emitting device according to one embodiment of the present invention may be fabricated over a substrate made of glass, plastic, or the like. The order of fabrication on the substrate may be from the first electrode 101 side or from the second electrode 102 side.

[0267] Note that, as a substrate on which a light-emitting device according to one embodiment of the present invention can be formed, for example, glass, quartz, or plastic can be used. A flexible substrate may also be used. A flexible substrate is a substrate that can be bent, and examples thereof include a plastic substrate made of polycarbonate or polyarylate. Films, inorganic vapor-deposited films, and the like can also be used. Note that other materials may be used as long as they function as a support in the manufacturing process of the light-emitting device and the optical element. Alternatively, any material may be used as long as it has a function of protecting the light-emitting device and the optical element.

[0268] For example, in this specification, a light-emitting device can be formed using various substrates. The type of substrate is not particularly limited. Examples of such substrates include semiconductor substrates (e.g., single-crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless steel foil, tungsten substrates, substrates with tungsten foil, flexible substrates, laminated films, cellulose nanofibers (CNF) containing fibrous materials, paper, and base films. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include the following: plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is acrylic resin. Another example is polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Other examples include resins such as polyamide resin, polyimide resin, aramid resin, and epoxy resin, inorganic vapor deposition films, and papers.

[0269] Alternatively, a flexible substrate may be used as the substrate, and the light-emitting device may be formed directly on the flexible substrate. Alternatively, a release layer may be provided between the substrate and the light-emitting device. The release layer can be used to separate the light-emitting device from the substrate after it has been partially or entirely completed and transfer it to another substrate. In this case, the light-emitting device can be transferred to a substrate with poor heat resistance or a flexible substrate. The release layer may be, for example, a laminated structure of inorganic films such as a tungsten film and a silicon oxide film, or a structure in which a resin film such as polyimide is formed on a substrate.

[0270] That is, a light-emitting device may be formed using a certain substrate, and then the light-emitting device may be transferred to another substrate, and the light-emitting device may be disposed on the other substrate. In addition to the substrates mentioned above, examples of the substrate onto which the light-emitting device may be transferred include a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or recycled fibers (acetate, cupra, rayon, recycled polyester)), a leather substrate, or a rubber substrate. By using these substrates, a light-emitting device that is durable, highly heat-resistant, lightweight, or thin can be obtained.

[0271] Alternatively, a field effect transistor (FET) may be formed on the substrate, and a light-emitting device may be fabricated on an electrode electrically connected to the FET. This allows fabrication of an active matrix display device in which the FET controls the driving of the light-emitting device.

[0272] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0273] (Embodiment 3) 3B, a display device is formed by forming a plurality of light-emitting devices 130 over an insulating layer 175. In this embodiment, a display device according to one embodiment of the present invention will be described in detail.

[0274] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0275] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0276] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel unit 177. In this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and yellow (Y); and sub-pixels of R, G, B, and infrared (IR).

[0277] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0278] 3A shows an example in which sub-pixels of different colors are arranged side by side in the X direction, and sub-pixels of the same color are arranged side by side in the Y direction. Note that sub-pixels of different colors may also be arranged side by side in the Y direction, and sub-pixels of the same color may also be arranged side by side in the X direction.

[0279] A connection portion 140 may be provided outside the pixel portion 177, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. The region 141 is provided with an organic compound layer 103. Furthermore, the connection portion 140 is provided with a conductive layer 151C.

[0280] 3A shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0281] Fig. 3(B) is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 3(A). As shown in Fig. 3(A), the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layers 175, 174, and 173 have openings that reach the conductive layer 172, and plugs 176 are provided to fill the openings.

[0282] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 135 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 135 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0283] 3B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the display device 100 is viewed from above. That is, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are insulating layers having openings above the first electrodes.

[0284] 3(B) shows light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Light emitting device 130R, light emitting device 130G, or light emitting device 130B may also emit other visible light or infrared light.

[0285] The display device of one embodiment of the present invention can be, for example, a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0286] Examples of the light-emitting material contained in the light-emitting device 130 include organic compounds or organometallic complexes such as fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. Furthermore, the light-emitting material may also be an inorganic compound such as quantum dots.

[0287] The light-emitting device 130R has the configuration described in Embodiment 1. It includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a common electrode 155 on the common layer 104. The common electrode 155 corresponds to the second electrode 102 in Embodiments 1 and 2. The common layer 104 may or may not be provided, but its inclusion is preferred because it reduces damage to the organic compound layer 103R during processing. When the common layer 104 is provided, it is preferred that the common layer 104 be an electron injection layer. When the common layer 104 is not provided, the organic compound layer 103R corresponds to the organic compound layer 103 in Embodiments 1 and 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiments 1 and 2.

[0288] The light-emitting device 130G has the same configuration as that described in Embodiment 1. It includes a first electrode (pixel electrode) including a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a common electrode 155 on the common layer 104. The common electrode 155 corresponds to the second electrode 102 in Embodiments 1 and 2. The common layer 104 may or may not be provided, but its inclusion is preferred because it reduces damage to the organic compound layer 103G during processing. When the common layer 104 is not provided, the organic compound layer 103G corresponds to the organic compound layer 103 in Embodiments 1 and 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in Embodiments 1 and 2.

[0289] The light-emitting device 130B has the same configuration as that described in Embodiment 1. It includes a first electrode (pixel electrode) including a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a common electrode 155 on the common layer 104. The common electrode 155 corresponds to the second electrode 102 in Embodiments 1 and 2. The common layer 104 may or may not be provided, but its inclusion is preferred because it reduces damage to the organic compound layer 103B during processing. When the common layer 104 is not provided, the organic compound layer 103B corresponds to the organic compound layer 103 in Embodiments 1 and 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiments 1 and 2.

[0290] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0291] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-shaped layers for each light-emitting device or for each emitted color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0292] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a lithography method.

[0293] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in the example shown in FIG. 3B, the first electrode of the light-emitting device 130 has a stacked structure of conductive layers 151 (151R, 151G, and 151B) and conductive layers 152 (152R, 152G, and 152B). For example, when the display device 100 is a top-emission type and the pixel electrode of the light-emitting device 130 functions as an anode, the conductive layer 151 preferably has high reflectivity for visible light, and the conductive layer 152 preferably has transparency to visible light and a high work function. When the display device 100 is a top-emission type, the higher the reflectivity of the pixel electrode for visible light, the higher the extraction efficiency of light emitted from the organic compound layer 103. When the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. As described above, by forming the pixel electrode of the light-emitting device 130 into a laminated structure of the conductive layer 151 having a high reflectivity for visible light and the conductive layer 152 having a high work function, the light-emitting device 130 can be a light-emitting device with a high light extraction efficiency and a low driving voltage. Note that in this specification and the like, when describing matters common to the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, they may be referred to as the conductive layer 151.

[0294] When the conductive layer 151 is a layer having high reflectance to visible light, the reflectance of the conductive layer 151 to visible light is preferably, for example, 40% to 100%, or 70% to 100%. When the conductive layer 152 is an electrode that is transparent to visible light, the transmittance of the conductive layer 152 to visible light is preferably, for example, 40% or more.

[0295] Here, when the pixel electrode has a laminated structure made up of multiple layers, the pixel electrode may be altered due to, for example, a reaction between the multiple layers. For example, when a film formed after forming the pixel electrode is removed by a wet etching method, galvanic corrosion may occur when a chemical solution comes into contact with the pixel electrode.

[0296] Therefore, in the display device 100 of the present embodiment, insulating layers 156 (156R, 156G, 156B) are formed on the side surfaces of the conductive layers 151 and 152. This prevents a chemical solution from coming into contact with the conductive layer 151, even when a film formed after forming a pixel electrode having the conductive layers 151 and 152 is removed by wet etching. This prevents, for example, galvanic corrosion from occurring in the pixel electrode. The display device 100 can therefore be manufactured using a method with a high yield, resulting in a low-cost display device. Furthermore, since defects in the display device 100 can be prevented, the display device 100 can be made highly reliable. In this specification and the like, when describing matters common to the insulating layers 156R, 156G, and 156B, they may be referred to as the insulating layer 156.

[0297] For example, a metal material can be used for the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing appropriate combinations of these metals can also be used.

[0298] The conductive layer 152 can be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0299] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0300] 3A will be described with reference to FIGS. 4 to 9. The light-emitting device included in the display device 100 has an organic compound layer formed through a manufacturing process that includes treatment using water. By applying the light-emitting device of one embodiment of the present invention as the light-emitting device included in the display device of one embodiment of the present invention, a display device including a light-emitting device with reduced driving voltage and high emission efficiency can be provided.

[0301] [Example of manufacturing method] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), or ALD. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0302] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0303] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the organic compound layer (e.g., hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer) can be formed by vapor deposition (e.g., vacuum deposition), coating methods (e.g., dip coating, die coating, bar coating, spin coating, and spray coating), printing methods (e.g., inkjet printing, screen printing, offset printing, flexography, gravure printing, and microcontact printing).

[0304] Furthermore, when processing the thin film that constitutes the display device, it can be processed using, for example, a lithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0305] As a lithography method, for example, photolithography can be used. There are two typical photolithography methods: one is a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by, for example, etching, and then the resist mask is removed; the other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into a desired shape.

[0306] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. An electron beam can also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0307] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0308] In addition, in the process of creating light-emitting devices, organic compounds that absorb light and become excited are handled. Excited organic compounds may be highly likely to react with oxygen in the atmosphere or water. In other words, when light with a wavelength that the organic compound absorbs is irradiated in the presence of oxygen, degradation products may be generated in the organic compound.

[0309] Therefore, when processing a substrate on which an organic compound is formed by photolithography, if the processing involves exposure to the atmosphere, it is advisable to carry out the processing in an environment where the lighting is appropriately controlled. Ideally, the processing should be carried out under lighting with a wavelength that does not excite the organic compound that absorbs and becomes excited by light. However, in order to ensure illuminance or color rendering properties that do not reduce work efficiency, it is advisable to use lighting with an emission edge at the shortest wavelength of 600 nm or less, preferably 580 nm or less, in the emission edge of the light source's emission spectrum.

[0310] For example, it is preferable to use yellow light (fluorescent lamp or light-emitting diode (LED)) that does not emit light with a wavelength shorter than 500 nm for illumination. It is also preferable to use orange light (fluorescent lamp or light-emitting diode (LED)) that does not emit light with a wavelength shorter than 530 nm. A low-pressure sodium lamp can also be used. Lighting using an optical filter that can block light in the short wavelength range can also be used, and for example, incandescent lamps, fluorescent lamps, light-emitting diodes (LED), halogen lamps, and sunlight can be used. Examples of optical filters that can block light in the short wavelength range include band-pass filters and long-pass filters (short-wavelength cut filters). Furthermore, by using the above-mentioned lighting, the illuminance of the illumination light can be reduced.

[0311] 4A, an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0312] The substrate may be a substrate having heat resistance sufficient to withstand at least subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. Also, a semiconductor substrate such as a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0313] 4A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0314] 4A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum evaporation. The conductive film 151f can be made of, for example, a metal material.

[0315] 4A, a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed over the conductive film 151f. The conductive film 152f can be formed by, for example, a sputtering method or a vacuum evaporation method. The conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide thereon. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide thereon.

[0316] The conductive film 152f can be formed by an ALD method. In this case, the conductive film 152f can be made of an oxide containing one or more elements selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. The conductive film 152f can be formed by repeating a cycle consisting of introducing a precursor (which may be generally referred to as a precursor or metal precursor), purging the precursor, introducing an oxidizing agent (which may be generally referred to as a reactant, reactant, or non-metal precursor), and purging the oxidizing agent. When forming the conductive film 152f as an oxide film containing multiple metals, such as indium tin oxide, the metal composition can be controlled by varying the number of cycles for each type of precursor.

[0317] For example, when forming an indium tin oxide film as the conductive film 152f, an indium-containing precursor is introduced, the precursor is purged, an oxidizer is introduced, and an In—O film is formed. Next, a tin-containing precursor is introduced, the precursor is purged, and an oxidizer is introduced, and an Sn—O film is formed. Here, by increasing the number of cycles for forming the In—O film compared to the number of cycles for forming the Sn—O film, the number of In atoms contained in the conductive film 152f can be made larger than the number of Sn atoms.

[0318] Furthermore, for example, when a zinc oxide film is formed as the conductive film 152f, a Zn-O film is formed using the above procedure. For example, when an aluminum zinc oxide film is formed as the conductive film 152f, a Zn-O film and an Al-O film are formed using the above procedure. For example, when a titanium oxide film is formed as the conductive film 152f, a Ti-O film is formed using the above procedure. For example, when an indium tin oxide film containing silicon is formed as the conductive film 152f, an In-O film, an Sn-O film, and an Si-O film are formed using the above procedure. For example, when a zinc oxide film containing gallium is formed, a Ga-O film and a Zn-O film are formed using the above procedure.

[0319] Examples of precursors that can be used include indium-containing precursors such as triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amido]-indium. Examples of precursors that can be used include tin chloride or tetrakis(dimethylamido)tin. Examples of precursors that can be used include zinc-containing precursors such as diethylzinc or dimethylzinc. Examples of precursors that can be used include gallium-containing precursors such as triethylgallium. Examples of precursors that can be used include titanium chloride, tetrakis(dimethylamido)titanium, or tetraisopropyl titanate. Examples of precursors that can be used include aluminum chloride or trimethylaluminum. Examples of precursors that can be used include silicon-containing precursors such as trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane. Examples of oxidizing agents include water vapor, oxygen plasma, or ozone gas.

[0320] 4A, a resist mask 191 is formed over the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0321] 4B, for example, the conductive films 151f and 152f in regions that do not overlap with the resist mask 191 are removed by, for example, etching, specifically, dry etching, to form a pixel electrode including the conductive layer 151 and the conductive layer 152. Note that if the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. As a result, the conductive layer 151 and the conductive layer 152 are formed. Note that, for example, when part of the conductive film 151f is removed by dry etching, a recess may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0322] Note that the conductive film 152f may be processed by lithography to form the conductive layers 152R, 152G, 152B, and 152C, and then the conductive film 151f may be processed using the conductive layers 152R, 152G, 152B, and 152C as masks. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. The conductive film 152f may also be removed by dry etching. After that, the conductive film 151f may be removed by wet etching.

[0323] Here, it is preferable to perform hydrophobic treatment on the conductive layer 152. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the conductive layer 152, adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be improved, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0324] 4(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0325] 4(D), an insulating film 156f, which will later become the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C, is formed on the conductive layer 151R and the conductive layer 152R, the conductive layer 151G and the conductive layer 152G, the conductive layer 151B and the conductive layer 152B, the conductive layer 151C and the conductive layer 152C, and the insulating layer 175. The insulating film 156f can be formed by, for example, a CVD method, an ALD method, a sputtering method, or a vacuum deposition method.

[0326] The insulating film 156f can be formed using an inorganic material. For example, the insulating film 156f can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using an oxide insulating film containing silicon, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using silicon oxynitride.

[0327] 4(E), the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the upper surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may also be formed using lithography.

[0328] Next, as shown in FIG. 5(A), an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 175.

[0329] 5A, the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the organic compound film 103Rf can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, the light-emitting device can be manufactured through a relatively simple process.

[0330] The organic compound film 103Rf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method, or may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0331] Next, as shown in FIG. 5(A), a sacrificial film 158Rf, which will later become the sacrificial layer 158R, and a mask film 159Rf, which will later become the mask layer 159R, are formed in this order on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175.

[0332] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf, but the mask film may have a single-layer structure or a laminated structure of three or more layers. Also, in this specification, the mask layer may be referred to as a sacrificial layer.

[0333] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0334] The sacrificial film 158Rf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Rf, specifically, a film that has a large etching selectivity with respect to the organic compound film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the sacrificial film 158Rf.

[0335] The sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperatures when forming the sacrificial film 158Rf and the mask film 159Rf are typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0336] The sacrificial film 158Rf and the mask film 159Rf are preferably made of films that can be removed by wet etching, which can reduce damage to the organic compound film 103Rf when processing the sacrificial film 158Rf and the mask film 159Rf compared to when dry etching is used.

[0337] The sacrificial film 158Rf and the mask film 159Rf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0338] The sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, it is preferable to form the sacrificial film 158Rf using the ALD method or the vacuum deposition method rather than the sputtering method.

[0339] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0340] The sacrificial film 158Rf and the mask film 159Rf can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf is preferable because it can prevent ultraviolet rays from being irradiated onto the organic compound film 103Rf and suppress deterioration of the organic compound film 103Rf.

[0341] Furthermore, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0342] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0343] Furthermore, it is preferable to use a film containing a material that has light-shielding properties against light, particularly ultraviolet light, as the sacrificial film and the mask film. As the light-shielding material, various materials such as metals, insulators, semiconductors, and semimetals that have light-shielding properties against ultraviolet light can be used, but since part or all of the sacrificial film and the mask film will be removed in a later step, it is preferable that the film be a film that can be processed by etching, and it is particularly preferable that the film have good processability.

[0344] For the sacrificial film and mask film, semiconductor materials such as silicon or germanium are preferably used because they have high compatibility with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or their compounds can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0345] By using a film containing a material that blocks ultraviolet light for the sacrificial film and the mask film, it is possible to prevent the organic compound layer from being irradiated with ultraviolet light during, for example, an exposure process, and by preventing the organic compound layer from being damaged by ultraviolet light, the reliability of the light-emitting device can be improved.

[0346] It should be noted that a film containing a material that has a light-shielding property against ultraviolet rays can also achieve the same effect when used as the material for the inorganic insulating film 125f, which will be described later.

[0347] Moreover, various inorganic insulating films can be used for the sacrificial film 158Rf and the mask film 159Rf. In particular, oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Rf than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf. For example, aluminum oxide films can be formed as the sacrificial film 158Rf and the mask film 159Rf using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (especially the organic compound layer).

[0348] For example, the sacrificial film 158Rf can be an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method, and the mask film 159Rf can be an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method.

[0349] The same inorganic insulating film can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125 to be formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125. The sacrificial film 158Rf and the inorganic insulating layer 125 may be formed under the same or different film-forming conditions. For example, by forming the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 158Rf is a layer that will be mostly or completely removed in a later process, it is preferable that it be easily processed. For this reason, the sacrificial film 158Rf is preferably formed under conditions where the substrate temperature during film formation is lower than that of the inorganic insulating layer 125.

[0350] An organic material may be used for one or both of the sacrificial film 158Rf and the mask film 159Rf. For example, the organic material may be a material that is soluble in a chemically stable solvent, at least for the film located at the top of the organic compound film 103Rf. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the organic compound film 103Rf.

[0351] The sacrificial film 158Rf and the mask film 159Rf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0352] For example, the sacrificial film 158Rf may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 159Rf may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0353] 5(A), a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0354] The resist mask 190R may be made of either a positive resist material or a negative resist material.

[0355] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably also provided in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R does not necessarily have to be provided on the conductive layer 152C. Furthermore, as shown in the cross-sectional view between B1 and B2 in FIG. 5A, the resist mask 190R is preferably provided so as to cover from the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0356] 5(B), a resist mask 190R is used to remove a portion of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0357] The sacrificial film 158Rf and the mask film 159Rf can be processed by wet etching or dry etching, respectively. The sacrificial film 158Rf and the mask film 159Rf are preferably processed by isotropic etching.

[0358] By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide aqueous solution (TMAH), diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0359] In processing the mask film 159Rf, the organic compound film 103Rf is not exposed, so the range of processing methods to be selected is wider than in processing the sacrificial film 158Rf. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 159Rf, deterioration of the organic compound film 103Rf can be further suppressed.

[0360] Furthermore, when dry etching is used to process the sacrificial film 158Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas. When dry etching is used, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He as the etching gas.

[0361] For example, when an aluminum oxide film formed by ALD is used as the sacrificial film 158Rf, a portion of the sacrificial film 158Rf can be removed by dry etching using CHF3 and He, or CHF3, He, and CH4. When an In-Ga-Zn oxide film formed by sputtering is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by wet etching using diluted phosphoric acid. Alternatively, a portion of the mask film 159Rf may be removed by dry etching using CH4 and Ar. Alternatively, a portion of the mask film 159Rf can be removed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by dry etching using SF6, CF4 and O2, or CF4, Cl2, and O2.

[0362] The resist mask 190R can be removed by the same method as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. Furthermore, the range of options for removing the resist mask 190R can be expanded.

[0363] 5(B), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a part of the organic compound film 103Rf, thereby forming the organic compound layer 103R.

[0364] 5B, a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layers 152G and 152B are exposed.

[0365] 5B shows an example in which the edge of the organic compound layer 103R is located inside the edge of the conductive layer 152R. This structure enables miniaturization of pixels, enabling the creation of a high-resolution display. Although not shown in FIG. 5B, the etching process may result in the formation of a recess in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0366] As described above, the resist mask 190R is preferably provided to cover the area between the dashed-dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). As a result, as shown in FIG. 5B, the sacrificial layer 158R and the mask layer 159R are provided to cover the area between the dashed-dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). This prevents the insulating layer 175 from being exposed between the dashed-dotted lines B1-B2, for example. This prevents the conductive layer 179 from being exposed when parts of the insulating layers 175, 174, and 173 are removed by etching or the like. This prevents the conductive layer 179 from being unintentionally electrically connected to other conductive layers. For example, this prevents a short circuit between the conductive layer 179 and the common electrode 155, which will be formed in a later step.

[0367] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0368] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0369] Alternatively, an etching gas containing oxygen may be used. The etching rate can be increased by using an etching gas containing oxygen. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be reduced.

[0370] When dry etching is used, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He can be used as the etching gas. Alternatively, for example, a gas containing CF4, He, and oxygen can be used as the etching gas. Alternatively, for example, a gas containing H2 and Ar, or a gas containing oxygen can be used as the etching gas.

[0371] As described above, in one embodiment of the present invention, the resist mask 190R is formed over the mask film 159Rf, and part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. Then, part of the organic compound film 103Rf is removed using the mask layer 159R as a hard mask to form the organic compound layer 103R. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using a lithography method. Note that part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may be removed.

[0372] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152G. When processing the organic compound film 103Rf, for example, the surface state of the conductive layer 152G may change to a hydrophilic state. For example, by performing a hydrophobic treatment on the conductive layer 152G, it is possible to improve the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later step, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0373] Next, as shown in FIG. 6(A), an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, and the insulating layer 175.

[0374] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0375] 6A, a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159R. A resist mask 190G is then formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190R.

[0376] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0377] 6(B), a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form an organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0378] 6B, a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G, and the mask layer 159R and the conductive layer 152B are exposed.

[0379] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B may change to a hydrophilic state. For example, by performing a hydrophobic treatment on the conductive layer 152B, it is possible to improve the adhesion between the conductive layer 152B and a layer (here, the organic compound layer 103B) formed in a later step, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0380] Next, as shown in FIG. 6(C), an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, the mask layer 159G, and the insulating layer 175.

[0381] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0382] 6(C), a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are sequentially formed on the organic compound film 103Bf and the mask layer 159R. A resist mask 190B is then formed. The materials and formation methods for the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190B are the same as those applicable to the resist mask 190R.

[0383] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0384] 6(D), a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B. The organic compound film 103Bf is then processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0385] 6(D), a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0386] It is preferable that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are perpendicular or approximately perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces is 60 degrees or more and 90 degrees or less.

[0387] As described above, the distance between adjacent pairs of the organic compound layers 103R, 103G, and 103B formed using lithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. The distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0388] 7A, it is preferable to remove the mask layers 159R, 159G, and 159B. Depending on the subsequent process, the sacrificial layers 158R, 158G, and 158B, and the mask layers 159R, 159G, and 159B may remain in the display device. By removing the mask layers 159R, 159G, and 159B at this stage, it is possible to prevent the mask layers 159R, 159G, and 159B from remaining in the display device. For example, if a conductive material is used for the mask layers 159R, 159G, and 159B, removing the mask layers 159R, 159G, and 159B in advance can prevent leakage current and capacitance from being generated by the remaining mask layers 159R, 159G, and 159B.

[0389] Although the present embodiment will be described taking as an example a case where the mask layers 159R, 159G, and 159B are removed, it is not necessary to remove the mask layers 159R, 159G, and 159B. For example, if the mask layers 159R, 159G, and 159B contain the aforementioned material that has a light-blocking property against ultraviolet light, it is preferable to proceed to the next step without removing them, because this protects the organic compound layer from ultraviolet light.

[0390] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, wet etching can reduce damage to the organic compound layers 103R, 103G, and 103B when removing the mask layer compared to dry etching.

[0391] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0392] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, as well as water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced-pressure atmosphere is preferred because it enables drying at a lower temperature.

[0393] Next, as shown in FIG. 7(B), an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0394] As will be described later, an insulating film 127f, which will later become the insulating layer 127, is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has a high affinity with the material used for the insulating film (e.g., a photosensitive resin composition containing an acrylic resin). To improve this affinity, it is preferable to hydrophobize (or increase the hydrophobicity of) the upper surface of the inorganic insulating film 125f by performing a surface treatment. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion. Note that the surface treatment may be the hydrophobization treatment described above.

[0395] Subsequently, as shown in FIG. 7(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0396] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than the insulating film 127f.

[0397] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperatures of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be formed into a film with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0398] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0399] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0400] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and also allows for the formation of a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0401] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling a highly reliable display device to be manufactured with high productivity.

[0402] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0403] The insulating film 127f is preferably formed using a resin composition containing, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid when irradiated with light and a compound that generates an acid when heated can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0404] Furthermore, heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50° C. to 200° C., more preferably 60° C. to 150° C., and still more preferably 70° C. to 120° C. This allows the solvent contained in the insulating film 127f to be removed.

[0405] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. If a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in a later process. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152R, 152G, 152B, and 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0406] The exposed region of the insulating film 127f can control the width of the insulating layer 127 to be formed later. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping the upper surface of the conductive layer 151.

[0407] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0408] Here, by providing an oxygen barrier insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B) and the inorganic insulating film 125f, it is possible to reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer becomes excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when light (visible light or ultraviolet light) is irradiated to the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0409] 8(A), development is performed to remove the exposed region of the insulating film 127f, thereby forming the insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0410] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0411] Etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f can be adjusted by ashing, for example.

[0412] 8(B), an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and reduce the thickness of a portion of the sacrificial layers 158R, 158G, and 158B. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Furthermore, the surfaces of the thin portions of the sacrificial layers 158R, 158G, and 158B are exposed. Note that, hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0413] The first etching process can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the first etching process can be performed all at once, which is preferable.

[0414] By performing etching using insulating layer 127a, which has tapered side surfaces, as a mask, the side surfaces of inorganic insulating layer 125 and the upper end portions of the side surfaces of sacrificial layers 158R, 158G, and 158B can be tapered relatively easily.

[0415] When dry etching is performed, it is preferable to use a chlorine-based gas. Examples of chlorine-based gases that can be used include Cl2, BCl3, SiCl4, and CCl4, either singly or in combination. Furthermore, oxygen gas, hydrogen gas, helium gas, and argon gas can be added to the chlorine-based gas, either singly or in combination. By using dry etching, thin-film regions of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0416] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. The dry etching apparatus having a high-density plasma source may be, for example, an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel-plate electrodes may be used. The capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes, or to apply a plurality of different high-frequency voltages to one of the parallel-plate electrodes, or to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes, or to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0417] Furthermore, when dry etching is performed, by-products and the like produced by the dry etching may be deposited on the upper surface and side surfaces of insulating layer 127a, etc. Therefore, components contained in the etching gas, components contained in inorganic insulating film 125f, and components contained in sacrificial layers 158R, 158G, and 158B may be contained in insulating layer 127 after the display device is completed.

[0418] Furthermore, it is preferable to perform the first etching process by wet etching. Using wet etching can reduce damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B compared to using dry etching. For example, wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed by a puddle method. Note that, if the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the above-mentioned etching process can be performed all at once, which is preferable.

[0419] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thicknesses of the sacrificial layers 158R, 158G, and 158B are reduced. In this manner, by leaving the sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, respectively, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged in subsequent processes.

[0420] Next, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of 0 mJ / cm. 2 Larger, 800mJ / cm 2 It is preferable that the dose is 0 mJ / cm or less. 2 Larger, 500mJ / cm 2 It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0421] Here, the presence of an oxygen barrier insulating layer (e.g., an aluminum oxide film) as the sacrificial layers 158R, 158G, and 158B can reduce oxygen diffusion into the organic compound layers 103R, 103G, and 103B. When the organic compound layers are irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layers become excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when light (visible light or ultraviolet light) is irradiated onto an organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layers 158R, 158G, and 158B on the island-shaped organic compound layers, it is possible to reduce oxygen from the atmosphere bonding to the organic compounds contained in the organic compound layers.

[0422] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces (FIG. 8C). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. The substrate temperature in this heat treatment is preferably higher than that in the heat treatment (pre-baking) performed after the formation of the insulating film 127f. This can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0423] By not completely removing the sacrificial layers 158R, 158G, and 158B in the first etching process and leaving the sacrificial layers 158R, 158G, and 158B in a thinner state, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0424] Depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of post-baking, a concave curved shape may be formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the post-baking time, the more likely the shape of the insulating layer 127 is to change, and a concave curved shape may be formed.

[0425] 9(A), an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a portion of the inorganic insulating layer 125 may also be removed. As a result, openings are formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, respectively, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Note that, hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as a second etching process.

[0426] The end of the inorganic insulating layer 125 is covered with the insulating layer 127. Also, Fig. 9(A) shows an example in which a part of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127, and the tapered portion formed by the second etching process is exposed.

[0427] If the inorganic insulating layer 125 and the mask layer are etched together after post-baking without the first etching process, side etching may cause the inorganic insulating layer 125 and the mask layer below the edge of the insulating layer 127 to disappear, forming a cavity. Such a cavity may cause unevenness on the surface on which the common electrode 155 is formed, making the common electrode 155 prone to step discontinuities. Even if the inorganic insulating layer 125 and the mask layer are side-etched in the first etching process, post-baking can subsequently fill the cavity with the insulating layer 127. The second etching process then etches the thinner mask layer, reducing the amount of side etching and making it less likely for a cavity to form. Even if a cavity does form, it can be extremely small. This allows for a flatter surface on which the common electrode 155 is formed.

[0428] The insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. Furthermore, for example, the end of the insulating layer 127 may contact the upper surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, if the developed insulating layer 127a is not exposed to light, the shape of the insulating layer 127 may be easily deformed.

[0429] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when using the dry etching method. The wet etching can be performed using an alkaline solution such as TMAH.

[0430] On the other hand, when the second etching process is performed using a wet etching method, if gaps are present between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, or at the interface between the organic compound layer 103 and the insulating layer 175 due to, for example, adhesion issues between the organic compound layer 103 and other layers, the chemical solution used in the second etching process may penetrate into these gaps and come into contact with the pixel electrodes. If the chemical solution comes into contact with both the conductive layer 151 and the conductive layer 152, the conductive layer with the lower natural potential may corrode due to galvanic corrosion. For example, if aluminum is used for the conductive layer 151 and indium tin oxide is used for the conductive layer 152, the conductive layer 152 may corrode. As a result, the yield of the display device may decrease. Furthermore, the reliability of the display device may also decrease.

[0431] As described above, by forming the insulating layer 156 so as to have an area overlapping with the side surface of the conductive layer 151 and by forming the insulating layer 156 so as to cover the conductive layer 151 and the conductive layer 152, it is possible to prevent the inorganic insulating layer 125 from being broken, and therefore it is possible to prevent the chemical solution from coming into contact with the underlying structure such as the conductive layer 151 during the second etching process, for example. This makes it possible to prevent corrosion of the pixel electrode.

[0432] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to prevent connection defects caused by disconnected portions of the common electrode 155 between the light-emitting devices and an increase in electrical resistance caused by locally thin portions of the common electrode 155. As a result, the display quality of the display device of one embodiment of the present invention can be improved.

[0433] Furthermore, after exposing portions of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, a further heat treatment is performed. This heat treatment can remove water contained in each organic compound layer, water adsorbed to the surface of each organic compound layer, and the like. This heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0434] If the temperature of the heat treatment is too low, it is not possible to sufficiently remove the water contained in each organic compound layer, the water adsorbed on the surface of each organic compound layer, etc. If the temperature of the heat treatment is too high, there is a possibility that the organic compound layer 103 may be deteriorated and the shape of the insulating layer 127 may be excessively changed. Therefore, the heat treatment should be performed at a temperature higher than the temperature at which water is desorbed from the organic compound layer 103, and at a temperature higher than the temperature at which the T of the organic compound contained in the organic compound layer 103 is desorbed. g A lower temperature is preferable, and the T g A lower temperature is more preferable. Specifically, the substrate temperature is preferably 80°C or higher and 130°C or lower, preferably 90°C or higher and 120°C or lower, more preferably 100°C or higher and 120°C or lower, and even more preferably 100°C or higher and 110°C or lower. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, but a reduced pressure atmosphere is preferred so that water desorbed from the organic compound layer 103 does not re-adsorb.

[0435] This heat treatment can sufficiently remove water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer without causing deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, or excessive change in the shape of the insulating layer 127. This can prevent deterioration in the characteristics of the light-emitting device.

[0436] 9(B), the common layer 104 and the common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by a method such as sputtering or vacuum deposition. The common layer 104 may be formed by deposition, and the common electrode 155 may be formed by sputtering.

[0437] 9(C), a protective layer 135 is formed on the common electrode 155. The protective layer 135 can be formed by a method such as vacuum deposition, sputtering, CVD, or ALD. The protective layer 135 may also function as a cap layer. For example, by using a material having an ordinary refractive index (no) of 1.90 or more at a wavelength of 450 nm, an ordinary refractive index (no) of 1.80 or more at a wavelength of 520 nm, or an ordinary refractive index (no) of 1.75 or more at a wavelength of 630 nm, the total reflection of light from the organic compound layer 103 at the cap layer can be suppressed, thereby improving the light extraction efficiency.

[0438] Furthermore, a sealing film may be provided on the protective layer 135 to prevent the light-emitting device from being exposed to the atmosphere before being incorporated into a display device or a light-emitting device. A material that is impermeable to impurities such as oxygen and water can be used for the sealing film. Specifically, an aluminum oxide film may be provided by the ALD method. After the protective layer 135 is formed, the light-emitting device may be transported to the ALD apparatus in a glove box with a nitrogen atmosphere to prevent exposure to the atmosphere until the sealing film is provided. At this time, the oxygen concentration in the glove box is preferably 100 ppm or less, more preferably 10 ppm or less, and even more preferably 1 ppm or less.

[0439] Subsequently, the substrate 120 is attached to the protective layer 135 or the sealing film using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device of one embodiment of the present invention, the insulating layer 156 is provided on the side surfaces of the conductive layer 151 and the conductive layer 152. This can increase the yield of the display device and suppress the occurrence of defects. Note that a display device having a microlens array can also be manufactured by providing a microlens array on the protective layer 135 or the sealing film before attaching the substrate 120, and then attaching the substrate 120.

[0440] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped organic compound layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, a display device with excellent characteristics can be provided, even in a display device including tandem light-emitting devices fabricated by lithography.

[0441] The structure of this embodiment can be used in appropriate combination with structures of other embodiments.

[0442] (Fourth embodiment) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described.

[0443] The light emitting device of the present embodiment can be a high-definition light emitting device, and therefore can be used for the display unit of a wristwatch-type or bracelet-type information terminal (wearable device), a head-mounted display (HMD) or other VR device, and a head-mounted wearable device such as a glasses-type AR device.

[0444] The light-emitting device of this embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, the light-emitting device of this embodiment can be used in the display portion of electronic devices having relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0445] [Display module] 10A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the display device 100A, and may be any of display devices 100B to 100F described later.

[0446] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0447] 10(B) is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0448] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 10(B). The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 10(B) shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 3(A).

[0449] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0450] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix light-emitting device.

[0451] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0452] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may be mounted on the FPC 290.

[0453] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0454] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0455] [Display device 100A] The display device 100A shown in FIG. 11A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0456] The substrate 301 corresponds to the substrate 291 in FIGS. 10A and 10B. The transistor 310 has a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0457] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0458] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0459] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0460] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0461] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are provided on the insulating layer 175. FIG. 11A shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the layered structure shown in FIG. 1A. An insulator is provided in the region between adjacent light-emitting devices. For example, in FIG. 11A, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0462] Insulating layer 156R is provided to have a region overlapping with a side surface of conductive layer 151R of light-emitting device 130R, insulating layer 156G is provided to have a region overlapping with a side surface of conductive layer 151G of light-emitting device 130G, and insulating layer 156B is provided to have a region overlapping with a side surface of conductive layer 151B of light-emitting device 130B. Furthermore, conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0463] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0464] Furthermore, a protective layer 135 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 135 via a resin layer 122. For details of the components from the light-emitting devices 130 to the substrate 120, refer to embodiment 3. The substrate 120 corresponds to the substrate 292 in FIG. 10(A).

[0465] Fig. 11(B) is a modified example of the display device 100A shown in Fig. 11(A). The light-emitting device shown in Fig. 11(B) has a colored layer 136R, a colored layer 136G, and a colored layer 136B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 136R, 136G, and 136B. In the light-emitting device shown in Fig. 11(B), the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 136R can transmit red light, the colored layer 136G can transmit green light, and the colored layer 136B can transmit blue light.

[0466] [Display device 100B] FIG. 12 shows a perspective view of the display device 100B, and FIG. 13(A) shows a cross-sectional view of the display device 100B.

[0467] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 12, the substrate 352 is clearly indicated by a dashed line.

[0468] The display device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, etc. Fig. 12 shows an example in which an IC (integrated circuit) 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 12 can also be called a display module having the display device 100B, the IC, and the FPC. Here, a light-emitting device having a connector such as an FPC attached to a substrate, or a light-emitting device having an IC mounted on the substrate, is called a display module.

[0469] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one side or multiple sides of the pixel portion 177. There may be one or multiple connection portions 140. FIG. 12 shows an example in which the connection portion 140 is provided so as to surround the four sides of the pixel portion 177. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0470] The circuit 356 can be, for example, a scanning line driver circuit.

[0471] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0472] 12 shows an example in which an IC 354 is provided on a substrate 351 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 354 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by, for example, a COF method.

[0473] Figure 13(A) shows an example of a cross section of the display device 100B when cutting a portion of the area including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the area including the end portion.

[0474] The display device 100B shown in Figure 13(A) has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0475] The light emitting devices 130R, 130G, and 130B each have the layered structure shown in Fig. 1A, except that the configuration of the pixel electrodes is different. For details of the light emitting devices, refer to the above embodiment.

[0476] Light-emitting device 130R includes conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G includes conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B includes conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B. Here, conductive layer 224R, conductive layer 151R, and conductive layer 152R may collectively be referred to as the pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R may also be referred to as the pixel electrode of light-emitting device 130R. Similarly, conductive layer 224G, conductive layer 151G, and conductive layer 152G may be collectively referred to as the pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G may be collectively referred to as the pixel electrode of light-emitting device 130G. Furthermore, conductive layer 224B, conductive layer 151B, and conductive layer 152B may be collectively referred to as the pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B may be collectively referred to as the pixel electrode of light-emitting device 130B.

[0477] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0478] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0479] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0480] Layer 128 has the function of planarizing the recesses of conductive layer 224R, conductive layer 224G, and conductive layer 224B. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses of conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0481] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for the layer 128 as appropriate. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0482] A protective layer 135 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 135 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 13(A), the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0483] 13A shows an example in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. Also, FIG. 13A shows an example in which an insulating layer 156C is provided so as to have a region overlapping with a side surface of the conductive layer 151C.

[0484] The display device 100B is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0485] The transistor 201 and the transistor 205 are both formed over a substrate 351. These transistors can be manufactured using the same material and the same process.

[0486] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0487] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the light-emitting device.

[0488] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0489] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, or the like.

[0490] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0491] The structure of the transistor included in the light-emitting device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0492] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0493] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0494] A semiconductor layer of the transistor preferably contains a metal oxide. That is, the light-emitting device of this embodiment preferably uses a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0495] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0496] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0497] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the light-emitting device and reduces component and mounting costs.

[0498] OS transistors have significantly higher field-effect mobility than transistors using amorphous silicon. Furthermore, OS transistors have significantly smaller source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of light-emitting devices.

[0499] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Because OS transistors have a higher source-drain breakdown voltage than Si transistors, a high voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0500] Furthermore, in terms of the saturation characteristics of the current that flows when the transistor operates in the saturation region, OS transistors can pass a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a drive transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of the light-emitting device vary. In other words, when operating in the saturation region, the source-drain current of an OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting brightness of the light-emitting device.

[0501] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission brightness," "multiple gradations," and "suppression of variations in light-emitting devices."

[0502] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0503] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) for the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0504] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, In:M:Zn=4:2:4.1 or a composition thereabout, In:M:Zn=5:1:3 or a composition thereabout, In:M:Zn=5:1:6 or a composition thereabout, In:M:Zn=5:1:7 or a composition thereabout, In:M:Zn=5:1:8 or a composition thereabout, In:M:Zn=6:1:6 or a composition thereabout, and In:M:Zn=5:2:5 or a composition thereabout. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0505] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0506] The transistors included in the circuit 356 and the transistors included in the pixel portion 177 may have the same structure or different structures. The transistors included in the circuit 356 may all have the same structure or may have two or more types. Similarly, the transistors included in the pixel portion 177 may all have the same structure or may have two or more types.

[0507] All the transistors included in the pixel portion 177 may be OS transistors, all the transistors included in the pixel portion 177 may be Si transistors, or some of the transistors included in the pixel portion 177 may be OS transistors and the rest may be Si transistors.

[0508] For example, by using both an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined is sometimes called LTPO. It is preferable to use an OS transistor as a transistor that functions as a switch for controlling the conduction / non-conduction of wiring, and an LTPS transistor as a transistor for controlling current.

[0509] For example, one of the transistors included in the pixel portion 177 functions as a transistor for controlling the current flowing through the light-emitting device and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0510] On the other hand, another transistor in the pixel portion 177 functions as a switch for controlling pixel selection / deselection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of the pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), so power consumption can be reduced by stopping the driver when displaying a still image.

[0511] As described above, the light-emitting device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0512] Note that a light-emitting device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current). Furthermore, with this structure, when an image is displayed on the light-emitting device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage during black display (so-called floating black).

[0513] In particular, among light-emitting devices with an MML structure, by applying the SBS (Side By Side) structure, which is a structure in which the light-emitting layers are made differently or painted differently as described above, the layers provided between the light-emitting devices (for example, organic layers shared between the light-emitting devices, also called common layers) are configured to be separated, thereby eliminating or greatly reducing side leakage.

[0514] 13B and 13C show other structural examples of the transistor.

[0515] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistor may also be provided.

[0516] 13B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0517] 13C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 13C. In FIG. 13C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0518] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a wiring 355 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0519] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. Also, various optical members can be arranged on the outside of the substrate 352.

[0520] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0521] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0522] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0523] [Display device 100C] The display device 100C shown in FIG. 14 differs from the display device 100B shown in FIG. 13(A) mainly in that it is a bottom-emission light-emitting device.

[0524] Light emitted from the light emitting device is emitted toward the substrate 351. It is preferable that a material with high transparency to visible light is used for the substrate 351. On the other hand, the light transparency of the material used for the substrate 352 is not an issue.

[0525] It is preferable to form a light-shielding layer 157 between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 14 shows an example in which the light-shielding layer 157 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 157, and the transistors 201, 205, etc. are provided over the insulating layer 153.

[0526] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0527] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0528] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are made of a material that is highly transparent to visible light. The common electrode 155 is preferably made of a material that reflects visible light.

[0529] Although the light emitting device 130G is not shown in FIG. 14, the light emitting device 130G is also provided.

[0530] Although FIG. 14 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0531] [Display device 100D] The display device 100D shown in Fig. 15(A) is a bottom-emission type, but is an example of a bottom-emission type display device that differs from the display device 100C shown in Fig. 14. The display device 100D differs from the display device 100C in that it has an organic resin layer 180. Note that in the drawing, the reference numerals of the same components as those in Fig. 11 may be omitted, and the description in Fig. 11 may be referred to for details.

[0532] 15(B) shows a top view layout of pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, 110B, and 110W), and FIG. 15(C) shows a top view of organic resin layer 180 in the region where subpixels 110R and 110W of pixel 178 are formed. Note that the distance between light-shielding layers 317 is width 110Rw in the light-emitting region of subpixel 110R.

[0533] As shown in FIG. 15(A), the organic resin layer 180 is provided on the insulating layer 214. As shown in the region surrounded by the dashed line in FIG. 15(A) and in FIG. 15(C), the organic resin layer 180 has curved recesses 181 (recesses 181a and 181b) at least in the region where the subpixels are formed. The recesses 181 may be provided outside the light-emitting region, such as recess 181c. By providing recess 181c, light emitted in the region overlapping with the light-shielding layer 317 or light traveling to the region overlapping with the light-shielding layer 317 is refracted and can be extracted from the light-emitting region, thereby improving the light-emitting efficiency.

[0534] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface between them.

[0535] 15, the recess has a hexagonal top surface shape (FIG. 15(C)) and a semicircular cross-sectional shape (FIG. 15(A)), but other shapes may be used as needed. For example, the recess may have a polygonal top surface shape such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0536] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0537] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive type material or a negative type material.

[0538] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0539] In addition, a first electrode 101 (a first electrode 101R and a first electrode 101W) is provided on the organic resin layer 180, and an organic compound layer 103 is provided on the first electrode 101. Ends of the first electrode 101 and the organic compound layer 103 may be covered with an insulating layer 127.

[0540] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a recess similar to the recess of the organic resin layer 180. Furthermore, the organic compound layer 103 formed on the first electrode 101 has a recess similar to the recess of the first electrode 101. Furthermore, the common layer 104 formed on the organic compound layer 103 has a recess similar to the recess of the organic compound layer 103. Furthermore, the common electrode 155 formed on the common layer 104 has a recess similar to the recess of the common layer 104. In other words, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the common electrode 155 have a structure in which they overlap one another.

[0541] In addition, a common layer 104 is provided on the organic compound layer 103 and the insulating layer 127, and a common electrode 155 is provided on the common layer 104. A protective layer 135 is provided on the common electrode 155, and the common electrode 155 is bonded to a substrate 352 via an adhesive layer 142.

[0542] Although the light emitting device 130G and the light emitting device 130B are not shown in FIG. 15(A), the light emitting device 130G and the light emitting device 130B are also provided.

[0543] [Display device 100E] The display device 100E shown in Figure 16(A) is a modified example of the top-emission type display device 100B shown in Figure 13(A), and differs from the display device 100B mainly in that it has colored layers 136R, 136G, and 136B.

[0544] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layer 136R, the colored layer 136G, and the colored layer 136B. The colored layer 136R, the colored layer 136G, and the colored layer 136B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 136R, an end of the colored layer 136G, and an end of the colored layer 136B can overlap the light-shielding layer 157.

[0545] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 136R can transmit red light, the colored layer 136G can transmit green light, and the colored layer 136B can transmit blue light. The display device 100E may be configured such that the colored layers 136R, 136G, and 136B are provided between the protective layer 135 and the adhesive layer 142.

[0546] 13A, 16A, and the like show examples in which the top surface of the layer 128 has a flat portion, but there is no particular limitation on the shape of the layer 128. Modified examples of the layer 128 are shown in FIGS.

[0547] 16(B) and 16(D), the upper surface of layer 128 may have a recessed shape in the center and its vicinity in cross section, i.e., a shape having a concave curved surface. In addition, common layer 154 may be provided so as to contact common electrode 155.

[0548] As shown in FIG. 16(C), the upper surface of the layer 128 can be configured so that the center and its vicinity bulge in cross section, that is, have a convex curved shape.

[0549] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and concave curved surfaces that the upper surface of layer 128 has is not limited, and may be one or more.

[0550] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 224R may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 224R.

[0551] 16(B) can also be considered an example in which layer 128 is contained within a recess formed in conductive layer 224R. On the other hand, as shown in FIG. 16(D), layer 128 may be present outside the recess formed in conductive layer 224R, that is, the width of the upper surface of layer 128 may be wider than the recess.

[0552] [Display device 100F] The display device 100F shown in Fig. 17(A) is a modified example of the top-emission type display device 100B shown in Fig. 13(A), and has microlenses 182 on the colored layers 136R, 136G, and 136B. Note that in the drawing, the reference numerals of the same components as those in Fig. 13(A) may be omitted, and the description in Fig. 13(A) may be referred to for details.

[0553] 17(B) shows a top view layout of a pixel 178 (pixels 178a and 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and Fig. 17(C) shows a top view of a microlens 182 in a region where the subpixels 110R, 110G, and 110B of the pixel 178 are formed. Note that the region where the common electrode 155 and the organic compound layer 103 are in contact has a width 110Gw in the light-emitting region of the subpixel 110G.

[0554] 17(A) has a planarization film 143 provided on a protective layer 135, and colored layers 136R, 136G, and 136B provided on the planarization film 143. A planarization film 144 is provided so as to cover the colored layers 136R, 136G, and 136B. A microlens 182 is provided on the planarization film 144.

[0555] As shown in FIG. 17C, the microlens 182 may be provided for each sub-pixel in a region where the sub-pixel is formed.

[0556] 17(C), the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the microlens 182 may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any other polygon with rounded corners, an ellipse, or a circle.

[0557] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0558] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0559] (Embodiment 5) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0560] The electronic devices of this embodiment include the light-emitting device of one embodiment of the present invention in their display portions. The light-emitting device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, the light-emitting device can be used in the display portions of various electronic devices.

[0561] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0562] In particular, the light-emitting device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display portion. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), eyeglass-type AR devices, and MR devices.

[0563] The light-emitting device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the light-emitting device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a light-emitting device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the light-emitting device of one embodiment of the present invention is not particularly limited. For example, the light-emitting device can be used with various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0564] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0565] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0566] 18(A) to 18(D), an example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the user's sense of immersion.

[0567] The electronic device 700A shown in Figure 18(A) and the electronic device 700B shown in Figure 18(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0568] The light-emitting device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0569] Electronic device 700A and electronic device 700B can each project an image displayed on display panel 751 onto display area 756 of optical member 753. Because optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through optical member 753. Therefore, electronic device 700A and electronic device 700B are each electronic devices capable of AR display.

[0570] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0571] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0572] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0573] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module detects a tap operation, a slide operation, or the like by the user, and can execute various processes. For example, a tap operation can execute processes such as pausing or resuming a video, and a slide operation can execute processes such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can broaden the range of operations.

[0574] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0575] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving element. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0576] The electronic device 800A shown in Figure 18(C) and the electronic device 800B shown in Figure 18(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0577] The light-emitting device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can be highly reliable.

[0578] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform a three-dimensional display using parallax.

[0579] Electronic device 800A and electronic device 800B can each be said to be electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view an image displayed on display unit 820 through lens 832.

[0580] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0581] The user can wear the electronic device 800A or the electronic device 800B on the head by using the wearing unit 823. Note that, for example, in Fig. 18(C), the wearing unit 823 is shaped like the temples of glasses (also called joints or temples), but is not limited to this. The wearing unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0582] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0583] Although an example having the imaging unit 825 has been shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0584] Electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of display unit 820, housing 821, and wearing unit 823. This allows a user to enjoy video and audio simply by wearing electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0585] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0586] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 700A shown in FIG. 18A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, the electronic device 800A shown in FIG. 18C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0587] 18B includes an earphone unit 727. For example, the earphone unit 727 and the control unit may be connected to each other by wire. A portion of the wiring connecting the earphone unit 727 and the control unit may be disposed inside the housing 721 or the wearing unit 723.

[0588] 18(D) has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be configured to be connected to each other by wire. A portion of the wiring connecting the earphone unit 827 and the control unit 824 may be disposed inside the housing 821 or the wearing unit 823. The earphone unit 827 and the wearing unit 823 may also have a magnet. This allows the earphone unit 827 to be fixed to the wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0589] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0590] As described above, the electronic devices of one embodiment of the present invention are preferably either glasses-type devices (such as the electronic devices 700A and 700B) or goggle-type devices (such as the electronic devices 800A and 800B).

[0591] Furthermore, the electronic device according to one embodiment of the present invention can transmit information to the earphone via a wired or wireless connection.

[0592] An electronic device 6500 shown in FIG. 19A is a portable information terminal that can be used as a smartphone.

[0593] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0594] The light-emitting device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.

[0595] FIG. 19B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0596] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0597] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0598] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0599] The light-emitting device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0600] 19C shows an example of a television set. A television set 7100 includes a display portion 7000 built in a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0601] The light-emitting device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0602] 19C can be operated using an operation switch provided on the housing 7171 and a separate remote control 7151. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7151 may have a display portion that displays information output from the remote control 7151. Channels and volume can be controlled by operation keys or a touch panel provided on the remote control 7151, and an image displayed on the display portion 7000 can be controlled.

[0603] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0604] 19D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0605] The light-emitting device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0606] FIG. 19(E) and FIG. 19(F) show an example of digital signage that can be used for a show window, a showcase, etc.

[0607] The digital signage 7300 shown in FIG. 19(E) includes a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0608] FIG. 19(F) shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401.

[0609] In FIG. 19(E) and FIG. 19(F), the light-emitting device according to one aspect of the present invention can be applied to the display unit 7000. Thus, an electronic device with high reliability can be obtained.

[0610] The larger the display unit 7000 is, the more information can be provided at once. Also, the larger the display unit 7000 is, the more easily it catches people's eyes. For example, the advertising effect can be enhanced.

[0611] In particular, when using the display device according to one aspect of the present invention for an advertisement or the like using the digital signage 7400 shown in FIG. 19(F), by using a panel with light transmissibility, the degree of freedom in expression can be increased. For example, a display device with light transmissibility can be manufactured by using wiring and support members using a conductive film that transmits visible light and adjusting the distance between pixel electrodes.

[0612] Furthermore, by using a tandem light-emitting device according to one embodiment of the present invention in addition to the wiring and support members using the conductive film th...

Claims

1. An organic compound represented by general formula (G4): 【Chemistry 1】 (In the general formula (G4), Ar １ and Ar ２ are each independently a group represented by any one of general formulas (Ar-1) to (Ar-4), and each have the same fused ring; R １ ~R １４ Each independently represents hydrogen (including deuterium). １５ ~R ５０ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by General Formula (G4) has two or more deuterium atoms.

2. An organic compound represented by general formula (G5): 【Chemistry 2】 (In the general formula (G5), Ar １ is a group represented by any one of general formulas (Ar-1) to (Ar-4), and R １ ~R ７ Each independently represents hydrogen (including deuterium). １５ ~R ５０ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by General Formula (G5) has two or more deuterium atoms.

3. An organic compound represented by general formula (G6): 【Transformation 3】 (In general formula (G6), R １ ~R ７ each independently represents hydrogen (including deuterium), R １５ ~R ２１ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by General Formula (G6) has two or more deuterium atoms.

4. An organic compound represented by general formula (G7): 【Chemistry 4】 (In general formula (G7), R １ ~R ７ each independently represents hydrogen (including deuterium), R １５ ~R ２１ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G7) has two or more deuterium atoms.

5. An organic compound represented by structural formula (200), structural formula (217), structural formula (260), structural formula (270), structural formula (278) or structural formula (287). 【Transformation 5】

6. An organic compound layer is disposed between a pair of electrodes, The organic compound layer comprises an organic compound represented by general formula (G1). 【Transformation 6】 (In the general formula (G1), Ar １ and Ar ２ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, R １ ~R １４ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G1) has two or more deuterium atoms, and Ar １ The number of carbon atoms forming the ring of Ar ２ The total number of carbon atoms forming the ring is 18 or more.

7. An organic compound layer is disposed between a pair of electrodes, The organic compound layer comprises an organic compound represented by general formula (G2). 【Transformation 7】 (In the general formula (G2), Ar １ and Ar ２ each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms forming a ring, R １ ~R １４ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by general formula (G2) has two or more deuterium atoms, and Ar １ The number of carbon atoms forming the ring of Ar ２ The total number of carbon atoms forming the ring is 18 or more.

8. In claim 6 or claim 7, Ar １ and Ar ２ at least one of the above is a group represented by any one of general formulae (Ar-1) to (Ar-5): 【Transformation 8】 (In the general formulae (Ar-1) to (Ar-5), R １５ ~R ５９ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

9. An organic compound layer is disposed between a pair of electrodes, The organic compound layer comprises an organic compound represented by general formula (G3). 【Chemistry 9】 (In the general formula (G3), Ar １ and Ar ２ each independently represents a substituted or unsubstituted aryl group having 10 to 30 carbon atoms forming a ring, and each has the same fused ring; １ ~R １４ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, provided that the organic compound represented by General Formula (G3) has two or more deuterium atoms.

10. In claim 9, Ar １ is a group represented by any one of general formulas (Ar-1) to (Ar-4): 【Chemistry 10】 (In general formulas (Ar-1) to (Ar-4), R １５ ~R ５０ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms.

Images