Multifunctional Optoelectronic Devices

Abstract

The present invention relates to a multifunctional optoelectronic device (10) comprising at least one photoresponsive perovskite light emitting diode (LED1) configured to operate alternately in an emission mode and a sensing mode. The at least one perovskite LED (1) comprises a cathode (2), an electron transport layer (ETL3) having a lowest unoccupied molecular orbital (LUMO) level and a highest occupied molecular orbital (HOMO) level, a perovskite layer (4) having a conduction band (CB) and a valence band (VB), a hole transport layer (HTL5) having a LUMO level and a HOMO level, and an anode (6). The LUMO level of the ETL (3) is lower than the bottom of the CB of the perovskite layer, and the HOMO level of the HTL (5) is higher than the top of the VB of the perovskite layer (4). The multifunction device (10) further comprises a sensing circuit comprising a sensor configured to determine a current through the at least one perovskite LED (1), and a switch configured to select between an emission mode and a sensing mode of the perovskite LED (1) as a function of the current through the at least one perovskite LED (1).

Description

[Technical field]

[0001] The present invention relates to multifunction optoelectronic devices, and in particular to multifunction displays. [Background technology]

[0002] Display screens are essential components, usually of large area, in modern electronic devices such as smartphones, smart watches, laptops, tablet computers, etc. Traditionally, displays, including liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays, are designed to perform a single function, namely, information display. Therefore, auxiliary functions, such as touch control, ambient light sensing, and fingerprint sensing, which are almost always essential in electronic products, are usually achieved by corresponding additional sensors, which inevitably increase the cost and make the device complex and cumbersome.

[0003] Using ultra-thin display screens with high screen-to-body ratios is currently one of the development trends of consumer electronics. Integrating auxiliary functions provided by additional sensors into display pixels is an effective way to reduce thickness and increase display screen-to-body ratios. However, traditional display devices, such as LCD and OLED displays, cannot effectively realize this application due to insufficient or no sensing function in pixels.

[0004] Metal halide perovskites have been recognized as promising emitters for high-quality displays due to their high color purity, high efficiency, and compatibility with solution and vacuum deposition processes. Furthermore, the combination of high optical absorption, low exciton binding energy, and remarkable carrier transport ability makes perovskites promising materials for photoresponsive LEDs. However, previously reported visible-light perovskite LEDs have shown poor photoresponse.

[0005] In view of the above, there is a need for optoelectronic devices, and particularly displays, that combine excellent light emitting properties with photoresponsiveness, thus allowing the integration of auxiliary functions within the device. Summary of the Invention

[0006] The present invention therefore discloses such a multifunctional device. In particular, the present invention relates to a multifunctional display based on perovskite LED pixels, such as metal halide perovskite LED pixels. Taking advantage of the high photoresponsiveness of perovskites, the display can include auxiliary functions, such as an image sensor or a touch screen, as described in more detail below.

[0007] The primary function of the multi-function device of the present invention may be to operate as a display, while the secondary function may be a touch sensor, a fingerprint sensor, a solar cell, or a combination thereof. It should be noted that both the primary and secondary functions are provided by the perovskite LED. The multi-function device of the present invention may further comprise other functions not provided by the perovskite LED.

[0008] Accordingly, the present invention discloses a multifunctional optoelectronic device comprising at least one photoresponsive perovskite light emitting diode (LED) configured to operate alternately in an emission mode and a sensing mode, the at least one perovskite LED comprising a cathode, an electron transport layer (ETL) having a lowest unoccupied molecular orbital (LUMO) level and a highest occupied molecular orbital (HOMO) level, a perovskite layer having a conduction band (CB) and a valence band (VB), a hole transport layer (HTL) having a LUMO level and a HOMO level, and an anode, wherein the LUMO level of the ETL is lower than the bottom of the CB of the perovskite layer and the HOMO level of the HTL is higher than the top of the VB of the perovskite layer.

[0009] A multifunction device of the present invention may comprise a plurality of perovskite LEDs, the term "plurality" being understood to mean at least two.

[0010] Because the LUMO level of the ETL is lower than the bottom of the CB of the perovskite and the HOMO level of the HTL is higher than the top of the VB of the perovskite, there is no carrier separation barrier between the charge transport layer and the perovskite layer, which would prevent the separation of the photogenerated carriers and significantly reduce the photoresponsivity of the device.

[0011] At least one perovskite LED according to the present invention is configured to show light. The light emitted by the at least one perovskite LED is preferably in the visible spectrum, i.e., has a wavelength within the range of 380 nm to 750 nm. Furthermore, at least one perovskite LED according to the present invention can be configured to function as a photodetector.

[0012] The multifunction device of the present invention further comprises a sensing circuit comprising a sensor configured to determine a current through the at least one perovskite LED, and a switch configured to select between an emission mode and a sensing mode of the perovskite LED as a function of the current through the at least one perovskite LED. The sensor may be a current sensor or a voltage sensor.

[0013] In other words, the sensing circuit is configured to read the current for each perovskite LED, or pixel, and control the bias within the circuit. The sensing circuit can be designed into the substrate or can be an external drive circuit for the display.

[0014] The multifunctional device according to the present invention offers several advantages. First, the pixels in the multifunctional perovskite display can function both in light-emitting and sensing modes. Second, the sensing circuit is designed to read out the photocurrent of the pixel, especially when the pixel is in the sensor mode. From this data, the multifunctional display can sense the touch position, the image (acting as a fingerprint sensor or scanner), or information from optical communication. Furthermore, the pixel can be used as a solar cell to convert light energy into electricity to charge the device.

[0015] As mentioned above, for perovskite LEDs, charge confinement structures are always introduced to suppress charge carrier recombination in the perovskite layer to obtain adequate performance. However, the optical response of these devices is always strongly limited by the photogenerated carriers being confined in the perovskite layer instead of being separated and collected by the electrodes. Devices with low energy barriers between the charge transport layer and the perovskite layer are desirable to achieve good sensing performance. However, in such devices, the ratio of non-radiative recombination of carriers will increase, resulting in reduced luminous efficiency. Reducing the non-radiative recombination centers is particularly important for these devices to obtain both good luminescence and sensing performance. To that end, the perovskite layer of the multifunctional device may be provided with a passivation agent. The passivation agent can be 2,2'-(ethylenedioxy)diethylamine (EDEA), 2,2'-(oxybis(ethyleneoxy))diethylamine (ODEA), 5-aminovaleric acid (5-AVA), 5-aminovaleric acid hydroiodide (5-AVAI), or 5-aminovaleric acid hydrobromide (5-AVABr). Adding the passivation agent significantly reduces non-radiative recombination centers, thus resulting in a perovskite layer with a high photoluminescence quantum efficiency (PLQE). Specifically, the PLQE can exceed 40%.

[0016] According to the present invention, the perovskite layer may comprise a metal halide perovskite having the general formula AMII Metal halide perovskites with X3, general formula A2M I M III Double perovskite with X6, general formula A'A n M n X 3n+1 or a combination thereof.

[0017] In the general formula, A is a small monovalent cation, A' is a large monovalent cation, and M I is a monovalent metal cation, M II is a divalent metal cation, M III is a trivalent metal cation and X is an anion.

[0018] The small monovalent cation is methylammonium (MA + ), Formamidinium (FA + ), Cs + and combinations thereof.

[0019] The large monovalent cation can be an aliphatic or aromatic alkyl ammonium. Specifically, the large monovalent cation is n-butylammonium (n-BA + ), 2-phenylethylammonium (PEA + ), 1-naphthylmethylammonium (NMA + ), and combinations thereof.

[0020] Monovalent metal cations include, but are not limited to, Ag + Alternatively, or in addition, the divalent metal cation may be Pb 2+ , Sn 2+ , Ga 2+ , Ge 2+ and combinations thereof. Additionally, the trivalent metal cation may be selected from the group consisting of Bi 3+ , In 3+ , Sb 3+ and combinations thereof.

[0021] The anion can be a halide anion. Specifically, the anion can be bromide (Br - ), iodide (I - ), and chloride (Cl - ) may be a mixture of

[0022] According to a particular embodiment, the metal halide perovskite is APbI2Br, where A is Cs + , F.A. + , or a combination thereof. The appropriate I:Br ratio makes the emission peak located at about 650 nm, which promises a saturated red color and good luminance efficiency. The device based on the co-passivated APbI2Br perovskite with low energy barrier can achieve high emission and sensing efficiency simultaneously.

[0023] The multi-function device according to the present invention provides another signal input or sensing method based on hardware in addition to the conventional display. It opens up many new application possibilities that can be made possible through program design. Some examples include the functions of touch interface, fingerprint reading, and ambient light sensing without additional devices or sensors. This helps to achieve an ultra-thin screen with a high screen-to-body ratio. In addition, some new functions can be developed using this display, such as solar cells to charge the device and data communication through the screen.

[0024] A multi-function device according to the present invention may comprise a driving circuit, in such an embodiment the sensing circuit may be integrated into the driving circuit.

[0025] The thickness of the ETL and / or HTL may be from 20 nm to 100 nm. Furthermore, the thickness of the perovskite layer may be from 50 nm to 500 nm. In practice, the thickness of the layers of the perovskite LED may be varied to achieve the desired performance.

[0026] The ETL can be ethoxylated polyethyleneimine (PEIE) modified or pure zinc oxide (ZnO), tin oxide (SnO2), or titanium oxide (TiO2). The HTL can be poly(9,9-dioctylfluorene-co-N-(4-sec-butylphenyl)-diphenylamine) (TFB) / molybdenum oxide (MoO x ).

[0027] As mentioned above, the multifunction device according to the present invention can be a display with auxiliary functions provided by perovskite LEDs. It is desirable to maximize the screen-to-body ratio of the multifunction display. In particular, the multifunction device can have a screen-to-body ratio of at least 90%.

[0028] As is evident from the above, the photoresponse of perovskite LEDs emitting in the visible region is significantly enhanced while preserving outstanding luminescence performance through sufficient defect passivation. The excellent performance of these pixels in both luminescence and photoresponse makes them successful candidates for the fabrication of multi-function displays with integrated auxiliary functions such as touch screens, ambient light sensors, and fingerprint sensors, thus providing ultra-thin displays at significantly reduced costs. Furthermore, charging functions can be integrated into the display, and the display can be used to charge batteries to convert ambient light energy into electricity. Another application is inter-device communication functions using the display as a signal transceiver. Finally, heart rate and oximeter sensors can be provided using the display pixels as light sources and detectors.

[0029] Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which: [Brief description of the drawings]

[0030] [Figure 1] Schematic of a photoresponsive perovskite LED. [Figure 2a] Cross-section of a perovskite LED. [Figure 2b]Energy diagram of photoresponsive perovskite LEDs. [Diagram 3] Diagram of the schematic structure of the driving / sensing circuitry in a multifunctional perovskite display. [Figure 4] FIG. 1 is a diagram of a multifunctional perovskite display according to the present invention. [Diagram 5] Diagram of JV and luminance-voltage curves of perovskite LEDs. [Figure 6] EQE and energy conversion efficiency of perovskite LEDs. [Figure 7a] Illustration of the JV curves of a perovskite device functioning as a solar cell under the AM1.5 solar simulator. [Figure 7b] Illustration of the J-V curves of the perovskite device functioning as a solar cell under illumination from a white LED lamp (4000K, 1000 lux). [Figure 8] Figure 1. Specific detectivity spectrum of a perovskite device serving as a photodetector test under zero bias. [Figure 9a] Transient photocurrent (TPC) curves of perovskite devices with different areas acting as photodetectors. [Figure 9b] Diagram of response times obtained by fitting TPC curves for devices of different areas. [Figure 10] A diagram of the schematic structure of a perovskite LED display. [Figure 11a] A diagram of touch position sensing on a perovskite LED display. [Figure 11b-d] An illustration of how information can be input by touching a perovskite LED display. [Figure 12a] A diagram of the image sensor function of a perovskite display. [Figure 12b] Image obtained by the perovskite display when acting as an image sensor. [Figure 13] Illustration of PPG results of a commercial PPG sensor and a perovskite display with a green III-V LED bead and a Si photodiode. [Figure 14a] Diagram of the charging curve of a supercapacitor using a perovskite LED as a power source. [Figure 14b] Diagram of the discharge curve of a supercapacitor using a perovskite LED as a power load. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] Perovskite LEDs 1 according to the present invention were prepared as follows. A pre-patterned indium tin oxide (ITO) substrate 2 was cleaned with a cleaning agent, rinsed with deionized water, and the substrate was dried with air flow, followed by 15 min of UV ozone treatment. A zinc oxide (ZnO) suspension in ethanol was synthesized and prepared according to procedures known in the art. A ZnO layer 3 was prepared by spin-coating the ZnO suspension at 4000 rpm onto the cleaned ITO substrate 2 and then transferred to a nitrogen-filled glove box. A perovskite precursor solution was prepared by mixing PbI2 (0.125 M), CsBr (0.25 M), FAI (0.25 M) in DMF and stirring at 60 °C for 1 h. Additionally, different amounts of 5AVAI (0-0.038 M) are introduced as a processing additive. The perovskite precursor solution was coated on the ZnO layer at 4000 rpm for 30 seconds, and then annealed on a hotplate at 120 °C for 10 minutes, thus forming the perovskite layer 4. After cooling, a TFB layer 5 (12 mg / mL in chlorobenzene) was further coated as the HTL. In a thermal evaporator, 2 × 10 -6 MoO under a chamber pressure of 1 Pa x The devices were finished by evaporating Zn (7 nm) and Au (50 nm) as electrodes 6. The LED and PV device pixels were 7.25 mm 2 The perovskite LED had a size of 100 nm, which was defined by a shadow mask. The perspective and cross-sectional views of the perovskite LED 1 are shown in Figures 1 and 2a, respectively. The LED mode of the perovskite LED is indicated by the white arrow 7, while the light detection / solar cell mode is indicated by the black arrow 8.

[0032] To ensure that the photogenerated carriers can be effectively separated and collected, ZnO and TFB are employed as the electron transport layer 3 and hole transport layer 5, respectively, and together they have been demonstrated as efficient charge transport layers in high-performance perovskite solar cells. Here, the three-dimensional (3D) mixed halide FA y Cs 1-y PbI 3-x Br x Perovskite films are used as the photoactive and light-emitting layers. When the device is functioning in the PV model, FA y Cs 1-y PbI 3-x Br x The photogenerated carriers in the perovskite film can be efficiently collected by the anode and cathode to the output circuit. During LED mode, the injected electrons and holes from the external circuit recombine in the perovskite layer and emit light.

[0033] As mentioned above, as shown in the right of FIG. 2 b and compared to the energy diagram of the conventional device shown in the left part of FIG. 2 a, the LUMO level of ETL3 is lower than the bottom of the CB of the perovskite layer 4, and the HOMO level of HTL5 is higher than the top of the VB of the perovskite layer 4.

[0034] The dashed lines shown in Figure 3 indicate the control bias in the sensing unit and the circuit. The voltage control selects between the LED mode and the sensing mode of the perovskite LED. When the value of the voltage control is high, the LED mode is ON, while when the value of the voltage control is low, the sensor mode is ON.

[0035] Some functions realized by the multifunction display of the present invention are presented in Figure 4. As can be seen, the multifunction display may incorporate some auxiliary functions such as an ambient light sensor, a solar cell, a touch screen, data transport, photoplethysmography (PPG), and an oximeter.

[0036] The device according to the present invention was investigated as follows. The JV curve, EQE, and luminance of the perovskite LED were measured on an LED testing platform, where a spectrometer (QE Pro, Ocean Optics) coupled with an integrating sphere (FOIS1) and a source meter (Keithley2400) were used to measure the device emission and electrical data at different scanning voltages in a glove box. The solar cell performance was measured using a source meter (Keithley2400) under an AM1.5 solar simulator or a commercial LED lamp. The photocurrent conversion EQE of the device was measured using a solar cell spectral response measurement system (QE-R3011, Enli Technology) at 0V bias. The dark current noise of the device was measured using a lock-in amplifier (SR830, Stanford Research System) coupled with a low noise preamplifier (SR570, Stanford Research System). The transient photocurrent curves of the device were recorded by an oscilloscope with an input impedance of 50Ω when the device was excited by a pulsed laser (337 nm, pulse width approximately 3.8 ns).

[0037] The performance of the red LED is shown in Figures 5 and 6. -2 A peak EQE of 9.8% at a drive current density of 1600 Cd cm -2 The brightness and EQE of the device of the present invention are sufficient for practical application in high brightness displays.

[0038] In addition to potential applications as light-emitting pixels in displays, our devices exhibit remarkable photoresponse, as shown in Figures 7a and 7b, and can function as solar cells and photodetectors. Through optimizing the interfaces and perovskite layers, power conversion efficiencies of 5.34% in AM1.5G and 7.80% in indoor light (white LED, 4000K, 1000 lux) were achieved. The higher efficiency in indoor light benefits from the better fitting between the EQE and the emission spectrum of illumination using white LEDs. The remarkable photoresponse of the device also indicates potential light-sensing applications of the device.

[0039] To investigate the photodetection performance, the dark current noise of the devices was measured. Due to the significant defect passivation of the perovskite layer 4, the optimized device achieved a dark current noise of 0.23 A at 475 nm. -1 Peak photoresponsivity (Figure 8) of approximately 10 fA Hz -0.5 The low noise equivalent power (NEP) and high peak ratio detectivity are 44 fW Hz and 45 fW Hz, respectively. -0.5 and 6.08 × 10 12 Jones and these are among the most sensitive perovskite photodetectors.

[0040] As an optical signal emitting or detecting device, the ability to emit or receive an optical signal is important. Therefore, the response speed of the device as an optical signal emitting and receiving device was determined. Figure 9a shows the transient photocurrent (TPC) curves of the device with different areas when functioning in photodetector mode. 2 For a device with an area of ​​7.25 mm, the response time is apparently determined by the fall time. Through fitting the TPC curve with a single exponential function, the fall time is found to be 7.25 mm. 2 520ns to 0.12mm area devices 2 As shown in Figure 9b, the fall time is reduced to 7.5 ns for a device of this area. 2When the voltage was reduced to 0.05V, the rise time was equal to the fall time.

[0041] Furthermore, potential applications of perovskite LED multifunctional displays have been demonstrated. A proof-of-concept display device 10 containing 1024 pixels 1 is shown diagrammatically in Figure 10. The emissive and charge transport layers were spin-coated onto patterned ITO glass, and Au electrodes were deposited using a patterned mask. Pixels are defined by the overlap of the ITO and Au electrodes. Information is displayed through controlling the on-off state of the pixels 1 using a shift register. This demonstration shows that perovskite LEDs are bright enough and fast enough for practical small-area passive matrix display applications.

[0042] The touchscreen function can be practically realized by the proof-of-concept display. By detecting the photocurrent of each pixel, the touch location on the display can be sensed. Figure 11a shows the photocurrent mapping of the display receiving a touch, which clearly indicates the touch location. Figures 11b-d show images of inputting information through the touchscreen function of the photoresponsive display.

[0043] The photoresponsive display pixel array 10 can also be used as an imaging sensor. Figure 12a shows a schematic of the imaging process of a touch surface using a photoresponsive display. A pixel working in photodetector mode receives light emitted by a nearby pixel working in LED mode and reflected by the surface of the touch object. The imaging capability of our display makes it promising for a screen-based scanner. Figure 12b shows an image scanned by the proof-of-concept display 10. Based on the full-color photoresponsive display, full color is easily supported to be realized.

[0044] Another impressive potential application of the imaging capability of the display of the present invention is to act as an on-display optical fingerprint sensor. Fingerprint recognition is one of the most welcome security and access control measures in consumer electronics. Generally, fingerprints can only be read at the specific position where the fingerprint reader is fixed. Multi-point fingerprint recognition solutions have been gaining attention due to the compelling new user experiences they can create, such as encryption and unlocking for different specific apps and countersigning with fingerprints. Displays based on the device described herein can read fingerprints at any part of the display, making displays based on our device a promising solution for in-screen multi-point fingerprint recognition.

[0045] The high brightness of the device of the present invention working in LED mode and the high photosensitivity working in detector mode allows the display to be used to monitor photoplethysmography (PPG) and oxyhemoglobin saturation, which will not only be beneficial in health monitoring but also improve the security level of fingerprint recognition by monitoring the activity of the PPG signal. We show the PPG signal captured by a proof-of-concept display using 10x10 pixels as LEDs and another 10x10 pixels as detectors (Figure 13). The simultaneous PPG signal captured by a commercial PPG sensor based on III-V LEDs and Si photodetectors is also shown for comparison. The similar PPG signal obtained by the device of the present invention compared to the commercial one indicates that our device exhibits a suitable signal / noise ratio when used as a PPG sensor.

[0046] The high power conversion efficiency of the devices described herein in indoor lighting provides our displays with photovoltaic capabilities to charge electronic products by converting light to electricity. Figure 14a shows the charging curve of the supercapacitor using our device acting as a solar cell under the AM1.5G solar simulator. Figure 14b shows the discharge curve of the charged supercapacitor when driving the device acting as an LED.

[0047] We propose a multifunctional display based on photoresponsive perovskite LEDs as pixels. It has been demonstrated that this multifunctional display can simultaneously act as a touch screen, ambient light sensing, and fingerprint sensing, which are essential functions in most electronic products. Furthermore, the high photoresponsiveness of the pixels makes the display screen a platform for man-machine interaction and communication function development. For example, functions such as screen-based scanner, screen-based data transfer, PPG sensing, and charging through the screen have been demonstrated using a proof-of-concept device in the real world.

[0048] As mentioned above, through effective defect passivation and interface engineering, we have significantly improved the power conversion efficiency of the red pixel for indoor LED light (4000K, 1000 lux) with a value of 7.8%, which allows the display to act as a photovoltaic device for charging devices. The photoresponse speed of the pixel can reach tens of MHz, which makes it possible to realize data transmission through the display. These results demonstrate the attractive advantages of perovskite LEDs when utilized in display fields.

[0049] Although the present invention has been described with reference to various embodiments, those skilled in the art will recognize that modifications may be made without departing from the scope of the invention. It is intended that the detailed description be considered as exemplary and that the appended claims, including all equivalents, are intended to define the scope of the invention.

Claims

1. A multi-function optoelectronic device (10), comprising: at least one photoresponsive perovskite light emitting diode (LED, 1) configured to operate alternately in a light emitting mode and a sensing mode, the at least one perovskite LED (1) comprising a cathode (2), an electron transport layer (ETL, 3) having a lowest unoccupied molecular orbital (LUMO) level and a highest occupied molecular orbital (HOMO) level, a perovskite layer (4) having a conduction band (CB) and a valence band (VB), a hole transport layer (HTL, 5) having a LUMO level and a HOMO level, and an anode (6), the LUMO level of the ETL (3) being lower than the bottom of the CB of the perovskite layer and the HOMO level of the HTL (5) being higher than the top of the VB of the perovskite layer, The multifunctional optoelectronic device (10) further comprises a sensing circuit comprising a sensor configured to determine a current through the at least one perovskite LED (1), and a switch configured to select between the emission mode and the sensing mode of the perovskite LED (1) as a function of the current through the at least one perovskite LED (1). A multi-function optoelectronic device (10).

2. The multifunction optoelectronic device (10) of claim 1 , wherein the perovskite layer (4) comprises a metal halide perovskite.

3. The metal halide perovskite has the general formula AM II X 3 Metal halide perovskites having the general formula A 2 M I M III X 6 Double perovskite having the general formula A′A n M n X 3n+1 3. The multifunctional optoelectronic device (10) of claim 2, wherein the perovskite is a layered perovskite having

4. A is a small monovalent cation, A' is a large monovalent cation, and M I is a monovalent metal cation, M II is a divalent metal cation, M III The multifunctional optoelectronic device (10) of claim 3, wherein is a trivalent metal cation and X is an anion.

5. The small monovalent cation is methylammonium (MA + ), Formamidinium (FA + ), Cs + 5. The multifunction optoelectronic device (10) of claim 4, wherein the multifunction optoelectronic device (10) is selected from the group consisting of:

6. The multifunctional optoelectronic device (10) of claim 4 or 5, wherein the large monovalent cation is an aliphatic or aromatic alkyl ammonium.

7. The monovalent metal cation is Ag + and / or the divalent metal cation is Pb 2+ , Sn 2+ , Ga 2+ , Ge 2+ and / or the trivalent metal cation is selected from the group consisting of Bi 3+ , In 3+ , Sb 3+ The multifunction optoelectronic device (10) of any one of claims 4 to 6, wherein the multifunction optoelectronic device (10) is selected from the group consisting of:

8. The multifunctional optoelectronic device (10) of any one of claims 4 to 7, wherein said anions are halide anions.

9. The anion is bromide (Br - ), iodide (I - ), and chloride (Cl - 9. The multifunction optoelectronic device (10) of claim 8, wherein the material is a mixture of:

10. The multifunctional optoelectronic device (10) according to any one of the preceding claims, wherein the perovskite layer (4) comprises a passivation agent.

11. 11. The multifunctional optoelectronic device (10) of claim 10, wherein the passivation agent is 2,2'-(ethylenedioxy)diethylamine (EDEA), 2,2'-(oxybis(ethyleneoxy))diethylamine (ODEA), 5-aminovaleric acid (5-AVA), 5-aminovaleric acid hydroiodide (5-AVAI), or 5-aminovaleric acid hydrobromide (5-AVABr), or a combination thereof.

12. The multifunction optoelectronic device (10) according to any one of claims 1 to 11, wherein the multifunction optoelectronic device (10) comprises a driving circuit, and the sensing circuit is integrated into the driving circuit.

13. The multifunctional optoelectronic device (10) according to any one of the preceding claims, wherein the thickness of the ETL (3) and / or the HTL (5) is between 20 nm and 100 nm and the thickness of the perovskite layer (4) is between 50 nm and 500 nm.

14. The ETL (3) may be zinc oxide (ZnO), tin oxide (SnO), modified with ethoxylated polyethyleneimine (PEIE) or pure. 2 ), or titanium oxide (TiO 2 The multifunction optoelectronic device (10) according to any one of claims 1 to 13, wherein

15. The HTL (5) is a poly(9,9-dioctylfluorene-co-N-(4-sec-butylphenyl)-diphenylamine) (TFB) / molybdenum oxide (MoO x The multifunction optoelectronic device (10) according to any one of the preceding claims, wherein

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