Micro LED panel with re-grown layer and method for manufacturing same

Abstract

A micro LED panel having a micro LED array, and a system and method for manufacturing the micro LED panel are provided in accordance with the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure includes at least a mesa structure and a regrowth layer. In some embodiments, the mesa structure includes a first type epitaxial layer, a light emitting layer, and a second epitaxial layer. In some embodiments, the regrowth layer is grown on at least a portion of the sidewalls of the first type epitaxial layer, the entire sidewalls of the light emitting layer, and at least a portion of the sidewalls of the second type epitaxial layer. The present disclosure can reduce non-radiative recombination at the sidewalls of the mesa structure and increase the luminous efficiency of the micro LED structure.

Description

[Technical field]

[0001] Technical Field The present disclosure relates generally to light emitting diode (LED) technology, and more particularly to micro LED panels and methods for manufacturing micro LED structures. [Background technology]

[0002] background

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used not only in stationary large screens such as liquid crystal display televisions (LCD TVs) and organic light emitting diode televisions (OLED TVs), but also in portable electronic devices such as laptop personal computers, smartphones, tablets, and wearable electronic devices.

[0003]

[0003] Inorganic micro light-emitting diodes are becoming increasingly important for use in a variety of applications, including self-luminous microdisplays, visible light communication, and optogenetics. Micro LEDs exhibit higher output performance than conventional LEDs due to their excellent strain relief, improved light extraction efficiency, and uniform current distribution. Micro LEDs also have improved thermal effects and operate at higher current densities, faster response speeds, larger operating temperature ranges, higher resolutions, color gamuts, and contrasts, and lower power consumption compared to conventional LEDs.

[0004]

[0004] To achieve higher pixel density, the size of micro-LEDs is getting smaller than 200 nm. However, the efficiency and carrier lifetime of devices based on micro-LED arrays are significantly degraded with the drastic reduction in micro-LED size due to surface recombination and poor p-type electrical conduction caused by top-down etching. The performance of micro-LEDs is also severely affected, especially by the quantum confined Stark effect caused by strain-induced polarization fields, which leads to unstable operation and a large change in emission wavelength with increasing current. In addition, as the diameter of the micro-LEDs is reduced, a large number of surface states and scratches are formed on the surface of the micro-LED structure by Inductively Coupled Plasma (ICP) etching, which increases non-radiative recombination at the surface of the micro-LED structure.

[0005]

[0005] In addition, the light emitted by the conventional micro LED structure is mainly distributed in all directions, resulting in poor directional light emission and reduced light intensity along the vertical direction. In order to realize the directional light emission of the micro LED structure, an additional reflective structure is configured around the mesa and at the bottom of the mesa of the micro LED structure to reflect the emitted light in the same direction, which complicates the manufacturing process and increases the cost of the micro LED.

[0006]

[0006] Furthermore, in devices based on micro-LED arrays, one micro-LED is traditionally used as one pixel, such as in a monolithic micro-LED array panel. However, as the diameter of the micro-LED structure decreases, the external quantum efficiency (EQE) decreases, which reduces the light efficiency of each pixel.

[0007]

[0007] The above content is only used to facilitate understanding of the technical solutions of the present application, and is not an admission that the above content is prior art. Summary of the Invention [Problem to be solved by the invention]

[0008] overview

[0008] Improved display designs are needed that help ameliorate and address the shortcomings of conventional display systems as discussed above. In particular, display panels with increased efficiency and improved images are needed.

[0009]

[0009] To overcome the above-mentioned drawbacks, the present invention provides a micro LED panel that improves luminous efficiency, avoids crosstalk, minimizes surface carrier loss, and optimizes quantum well sidewall area. [Means for solving the problem]

[0010]

[0010] In order to achieve the above objectives, some exemplary embodiments of the present disclosure provide a micro LED panel having a micro LED structure array, comprising: At least one micro LED structure, comprising at least a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on at least a portion of the sidewalls of the first type epitaxial layer, on the entire sidewalls of the light emitting layer, and on a portion of the sidewalls of the second type epitaxial layer; The present invention provides a micro LED panel comprising a micro LED structure comprising:

[0011]

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is formed between adjacent mesa structures, and the upper end of the regrown layer protrudes further into the dielectric layer.

[0012]

[0012] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer protruding into the dielectric layer is connected to an adjacent light emitting layer and an adjacent first type epitaxial layer.

[0013]

[0013] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrowth layer is grown on the entire sidewall of the first type epitaxial layer, as well as on the entire sidewall of the light emitting layer and on a portion of the sidewall of the first type epitaxial layer.

[0014]

[0014] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regrowth layer is grown on a portion of the sidewall of the first type epitaxial layer, the entire sidewall of the light emitting layer and a portion of the sidewall of the second type epitaxial layer.

[0015]

[0015] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0016]

[0016] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the inclination angle of the regrown layer on the sidewall of the light emitting layer is 30 degrees to 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer protruding into the dielectric layer is parallel to the bottom surface of the second type epitaxial layer.

[0017]

[0017] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the diameter of the mesa structure is less than or equal to 3 μm.

[0018]

[0018] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0019]

[0019] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a plurality of quantum well pairs, and the regrown layer on the sidewalls of the light emitting layer is not parallel to the respective surfaces of the plurality of quantum well pairs.

[0020]

[0020] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0021]

[0021] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

[0022]

[0022] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0023]

[0023] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0024]

[0024] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0025]

[0025] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0026]

[0026] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0027]

[0027] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is greater than the resistance of the light emitting layer.

[0028]

[0028] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the re-grown layer is not electrically conductive.

[0029]

[0029] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a dielectric layer is formed on the surface of the regrown layer between adjacent mesa structures.

[0030]

[0030] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0031]

[0031] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0032] Some exemplary embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 of forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover a sidewall of the first type epitaxial layer, a sidewall of the light emitting layer, and a part of a sidewall of the second type epitaxial layer; Step 4 depositing a first dielectric layer on the substrate between adjacent mesa structures, the first dielectric layer having an upper portion lower than a lower portion of the light emitting layer; Step 5 of removing the first mask pattern; Step 6 of forming a regrowth layer on the entire sidewall of the light emitting layer, on a portion of the sidewall of the second type epitaxial layer, and on at least a portion of the sidewall of the first epitaxial layer by an epitaxial material regrowth process; a step 7 of forming a bottom contact in the regrowth layer on the top surface of the epitaxial layer of the first type and forming a second dielectric layer on the regrowth layer having an opening exposing a top of the bottom contact; Step 8, forming a sub-connection structure in the opening; Step 9: bonding the first type epitaxial layer and the lower connection structure with the IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; forming a top contact and a top conductive layer on the second epitaxial layer; The present invention provides a method comprising:

[0033]

[0033] In some exemplary embodiments or any combination of exemplary embodiments, the method for manufacturing a micro LED panel further includes, in step 6, forming a second mask pattern covering an upper portion and a portion of the sidewall of the first type epitaxial layer before forming the regrowth layer, forming the regrowth layer on the entire sidewall of the light emitting layer, at least a portion of the sidewall of the first type epitaxial layer, and a portion of the sidewall of the second type epitaxial layer, and removing the second mask pattern after forming the regrowth layer.

[0034]

[0034] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, a regrowth layer is formed directly on the entire sidewall of the light emitting layer, on the entire sidewall of the first type epitaxial layer, and on the top of the first type epitaxial layer.

[0035]

[0035] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the temperature in the re-growth process is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds.

[0036] Some exemplary embodiments of the present disclosure provide a micro LED panel having an array of micro LED structures, comprising: At least one micro LED structure, comprising at least a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on a portion of the sidewall of the first-type epitaxial layer, on all of the sidewall of the second-type epitaxial layer, and on all of the sidewall of the light-emitting layer; The present invention provides a micro LED panel comprising a micro LED structure comprising:

[0037]

[0037] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a dielectric layer is formed between adjacent micro LED structures, and the upper end of the regrown layer protrudes further along the upper surface of the dielectric layer.

[0038]

[0038] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0039]

[0039] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the inclination angle of the regrown layer on the sidewall of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer protruding along the dielectric layer is parallel to the top surface of the dielectric layer.

[0040]

[0040] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer protruding along the top of the dielectric layer is connected to the adjacent light emitting layer and the second type epitaxial layer.

[0041]

[0041] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0042]

[0042] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the re-grown layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0043]

[0043] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a plurality of quantum well pairs, and the regrown layer on the sidewalls of the light emitting layer is not parallel to each of the plurality of quantum well pairs.

[0044]

[0044] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0045]

[0045] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without the intentional doping ions.

[0046]

[0046] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0047]

[0047] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0048]

[0048] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0049]

[0049] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0050]

[0050] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0051]

[0051] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is greater than the resistance of the light emitting layer.

[0052]

[0052] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the re-grown layer is not electrically conductive.

[0053]

[0053] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a dielectric layer is further formed on the surface of the re-grown layer.

[0054]

[0054] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0055]

[0055] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0056] Some exemplary embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 of forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to cover an upper portion and a portion of a sidewall of the first type epitaxial layer; Step 4, forming a regrowth layer on the entire sidewall of the light emitting layer, the entire sidewall of the second type epitaxial layer, and a portion of the sidewall of the first type epitaxial layer by an epitaxial material regrowth process; Step 5 of removing the mask pattern; forming a bottom contact on a surface of the epitaxial layer of the first type and forming a dielectric layer over the regrowth layer and over the top and sidewalls of the epitaxial layer of the first type, the dielectric layer having an opening exposing a top of the bottom contact; Step 7 of forming a sub-connection structure in the opening; Step 8: bonding the first type epitaxial layer and the lower connection structure with the IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 9 of forming a top contact and a top conductive layer on the second epitaxial layer; The present invention provides a method comprising:

[0057]

[0057] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, a regrowth layer is further formed on the substrate between adjacent mesa structures, and the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0058] Some exemplary embodiments of the present disclosure provide a micro LED panel including an array of micro LED structures, At least one micro LED structure, a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on all of the sidewalls of the first-type epitaxial layer, on all of the sidewalls of the light-emitting layer, and on all of the sidewalls of the second-type epitaxial layer; The present invention provides a micro LED panel comprising a micro LED structure comprising:

[0059]

[0059] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a dielectric layer is formed between adjacent mesa structures.

[0060]

[0060] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the upper end of the regrown layer protrudes further along the upper surface of the dielectric layer.

[0061]

[0061] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0062]

[0062] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the inclination angle of the regrown layer on the sidewall of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer protruding along the dielectric layer is parallel to the top surface of the dielectric layer.

[0063]

[0063] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer protruding along the top of the dielectric layer is connected to an adjacent second type epitaxial layer.

[0064]

[0064] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a re-growth layer is further formed on the entire sidewall of the mesa structure.

[0065]

[0065] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a re-growth layer is further formed on a bottom surface of the first type epitaxial layer.

[0066]

[0066] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is 3 μm or less.

[0067]

[0067] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the re-grown layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0068]

[0068] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a plurality of quantum well pairs, and the regrown layer on the sidewalls of the light emitting layer is not parallel to the respective surfaces of the plurality of quantum well pairs.

[0069]

[0069] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0070]

[0070] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without the intentional doping ions.

[0071]

[0071] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0072]

[0072] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0073]

[0073] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0074]

[0074] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0075]

[0075] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0076]

[0076] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is greater than the resistance of the light emitting layer.

[0077]

[0077] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the re-grown layer is not electrically conductive.

[0078]

[0078] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is further formed on the bottom of the mesa structure, and the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0079]

[0079] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, a bottom connection structure is formed in the dielectric layer.

[0080]

[0080] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0081] Some exemplary embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 of forming a mesa structure by patterning the entire epitaxial structure; Step 3: forming a regrowth layer on the entire sidewall of the light emitting layer, on at least a portion of the sidewall of the first type epitaxial layer, and on at least a portion of the sidewall of the second type epitaxial layer by an epitaxial material regrowth process; Step 4 of forming an opening in the regrowth layer over an upper portion of the epitaxial layer of the first type and forming a bottom contact on a surface of the epitaxial layer of the first type in the opening, then forming a dielectric layer over the regrowth layer and forming a second opening in the dielectric layer to expose the bottom contact; Step 5, forming a sub-connection structure in the opening; Step 6: bonding the first type epitaxial layer and the lower connection structure with the IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7 of forming a top contact and a top conductive layer on the second epitaxial layer; The present invention provides a method comprising:

[0082]

[0082] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, a re-growth layer is further formed on the entire sidewall and top of the first type epitaxial layer and on the top of the semiconductor substrate, and in step 4, an opening is further formed in the re-growth layer on the first type epitaxial layer, wherein the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0083]

[0083] In some exemplary embodiments or any combination of exemplary embodiments, the method for manufacturing a micro LED panel further includes, in step 3, forming a mask pattern covering an upper portion and a portion of the sidewall of the first type epitaxial layer before forming the re-growth layer, and removing the mask pattern after forming the re-growth layer.

[0084]

[0084] In some exemplary embodiments or any combination of exemplary embodiments, the method for manufacturing a micro LED panel further includes, in step 3, forming a mask pattern covering a portion of the sidewall of the second type epitaxial layer before forming the re-growth layer, and removing the mask pattern after forming the re-growth layer.

[0085]

[0085] In some exemplary embodiments or any combination of exemplary embodiments, the method for manufacturing a micro LED panel further includes, in step 3, forming a first mask pattern covering an upper portion and a portion of a sidewall of the first type epitaxial layer before forming the regrowth layer, forming a second mask pattern covering a portion of a sidewall of the second type epitaxial layer, and removing the first mask pattern and the second mask pattern after forming the regrowth layer.

[0086] Some exemplary embodiments of the present disclosure provide a micro LED panel including an array of micro LED structures, At least one micro LED structure, a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on the entire sidewall of the mesa structure to completely fill between adjacent mesa structures; The present invention provides a micro LED panel comprising a micro LED structure comprising:

[0087]

[0087] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the width of the top of the re-grown layer is the same as the width of the top of the space between adjacent mesa structures.

[0088]

[0088] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0089]

[0089] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0090]

[0090] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes multiple quantum well pairs.

[0091]

[0091] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0092]

[0092] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without the intentional doping ions.

[0093]

[0093] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0094]

[0094] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0095]

[0095] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0096]

[0096] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0097]

[0097] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0098]

[0098] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is greater than the resistance of the light emitting layer.

[0099]

[0099] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the re-grown layer is not conductive.

[0100]

[0100] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0101]

[0101] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regrowth layer is further formed on the bottom of the mesa structure, and a bottom connection structure is formed in the regrowth layer and electrically connected to the first type epitaxial layer.

[0102]

[0102] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is further formed on the bottom of the mesa structure and on the bottom of the re-grown layer, and a bottom connection structure is formed in the dielectric layer and electrically connected to the first type epitaxial layer.

[0103] Some exemplary embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 forming a mesa structure by patterning the epitaxial structure from top to bottom; Step 3 forming a completely filled regrowth ring in the space of the adjacent mesa structure and on top of the semiconductor substrate; Step 4 of forming an opening in the regrowth layer over the epitaxial layer of the first type and forming a bottom contact on a surface of the epitaxial layer of the first type in the opening; Step 5, forming a sub-connection structure in the opening; Step 6: bonding the lower connection structure with the IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7 of forming a top contact and a top conductive layer on the second epitaxial layer; The present invention provides a method comprising:

[0104]

[0104] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the re-growth process is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds.

[0105] Some exemplary embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 forming a mesa structure by patterning the epitaxial structure from top to bottom; Step 3: forming a completely filled regrowth layer in the spaces of the adjacent mesa structures and on the entire sidewalls of the epitaxial structures by an epitaxial material regrowth process; Step 4 of forming a dielectric layer over an upper portion of the epitaxial layer of the first type and over an upper portion of the regrowth layer; Step 5 of forming an opening in the dielectric layer over the epitaxial layer of the first type and forming a bottom contact on a surface of the epitaxial layer of the first type in the opening; Step 6 of forming a lower connection structure in the opening; Step 7: bonding the lower connection structure with the IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 8 of forming a top contact and a top conductive layer on top of the second type epitaxial layer; The present invention provides a method comprising:

[0106]

[0106] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the re-growth process is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds.

[0107]

[0107] The micro LED panel provided by the present disclosure can avoid non-radiative recombination on the sidewall of the micro LED structure. Moreover, compared with conventional micro LEDs, the micro LED structure of the present disclosure has high directional emission without other reflective structures, which simplifies the micro LED structure and reduces the cost. Moreover, the present disclosure can also suppress non-radiative recombination on the surface of the micro LED structure, which improves image quality and increases the EQE of the pixel.

[0108]

[0108] It should be noted that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described herein are not all-inclusive, and in particular many additional features and advantages will be apparent to those skilled in the art in view of the drawings, the specification, and the claims. It should also be noted that the wording used herein is primarily selected for readability and instructional purposes, and may not be selected to delineate or limit the subject matter of the present invention.

[0109] BRIEF DESCRIPTION OF THE DRAWINGS

[0109] In order to allow the present disclosure to be more fully understood, a more specific description may be given with reference to the features of various embodiments, some of which are illustrated in the accompanying drawings. However, the accompanying drawings merely illustrate the relevant features of the present disclosure and should therefore not be considered limiting, since the description may admit of other useful features.

[0110]

[0110] For convenience, "up" is used to mean away from the substrate of the light-emitting structure shown in the figures and "down" means toward the substrate, and other directional terms such as top, bottom, above, below, underneath, beneath, etc. should be interpreted accordingly. [Brief description of the drawings]

[0111] [Figure 1]

[0111] A cross-sectional view of a micro LED structure according to some embodiments of the present disclosure (e.g., embodiment 1). [Diagram 2]

[0112] FIG. 2 is a cross-sectional view of another micro LED structure according to embodiment 1 of the present invention. [Diagram 3]

[0113] 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments (e.g., embodiment 1) of the present disclosure. [Figure 4]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Diagram 5]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 6]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 7]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 8]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 9]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 10]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 11]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 12]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 13]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 14]

[0113] FIG. 2 illustrates steps of a method for manufacturing the micro LED panel in FIG. 1 according to some embodiments of the present disclosure (eg, embodiment 1). [Figure 15]

[0114] FIG. 3 is a cross-sectional structural diagram of step 5 of the method for manufacturing the micro LED panel of FIG. 2 according to some embodiments (e.g., embodiment 1) of the present invention. [Figure 16]

[0115] FIG. 2 is a cross-sectional structural diagram of another micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 1). [Figure 17]

[0116] FIG. 2 is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 2). [Figure 18]

[0117] 18 illustrates steps of a method for manufacturing the micro LED panel in FIG. 17 according to some embodiments of the present disclosure (e.g., embodiment 2). [Figure 19]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 20]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 21]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 22]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Diagram 23]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 24]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Diagram 25]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 26]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 27]

[0117] FIG. 17 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 2). [Figure 28]

[0118] FIG. 2 is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 3). [Figure 29]

[0119] 29 illustrates steps of a method for manufacturing a micro LED panel in FIG. 28 according to some embodiments of the present disclosure (e.g., embodiment 3). [Diagram 30]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 31]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 32]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 33]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 34]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 35]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Diagram 36]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Figure 37]

[0119] FIG. 28 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 3). [Figure 38]

[0120] FIG. 1 is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 4). [Figure 39]

[0121] 39 illustrates steps of a method for manufacturing a micro LED panel in accordance with some embodiments of the present disclosure (e.g., embodiment 4). [Diagram 40]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Diagram 41]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Diagram 42]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Diagram 43]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Diagram 44]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Diagram 45]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Figure 46]

[0121] FIG. 38 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (eg, embodiment 4). [Figure 47]

[0122] FIG. 1 is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 48]

[0123] 48 illustrates steps of a method for manufacturing a micro LED panel in FIG. 47 according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 49]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 50]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 51]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 52]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Diagram 53]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 54]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). [Figure 55]

[0123] FIG. 47 illustrates steps of a method for manufacturing a micro LED panel according to some embodiments of the present disclosure (e.g., embodiment 5). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0112]

[0124] According to common practice, the various features illustrated in the figures are not drawn to scale. Accordingly, dimensions of the various features may be arbitrarily expanded or reduced for clarity. In addition, some drawings may not depict all of the components of a given system, method, or device. Finally, like reference numerals may be used to denote like features throughout the specification and figures.

[0113] Detailed Description

[0125] Numerous details have been described herein to provide a thorough understanding of the example embodiments illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the claims are limited only by the features and aspects specifically recited in the claims. Moreover, well-known processes, components, and materials have not been described in extensive detail so as not to unnecessarily obscure relevant aspects of the embodiments described herein.

[0114]

[0126] In order to solve the problems in the related art as discussed above, in some embodiments, a micro LED panel including a plurality of micro LED structures is disclosed in the present disclosure. The dimension of the micro LED panel is 1 cm or less. The micro LED structures are arrayed in the micro LED panel with a resolution of 720*480, 640*480, 1920*1080, 1280*720, 2k, or 4k, etc. The diameter of the micro LED structure is at the nanometer level, such as 20 nm to 100 nm.

[0115]

[0127] 1 is a cross-sectional view of a micro LED structure according to some embodiments of the present invention. Referring to FIG. 1, the micro LED structure is formed by, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The first type and the second type have different conductivity types, for example, the first type is P type while the second type is N type. In another example, the first type is N type while the second type is P type. In some embodiments, the material of the first type epitaxial layer 01 is one or more of P-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of P-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof. and the material of the second type epitaxial layer 03 can be one or more of N-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of N-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof.

[0116]

[0128] In some embodiments, the light emitting layer 03 is formed by a plurality of quantum well layer pairs. The material of the quantum well layer can be one of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, and the like. In addition, the thickness of the first type epitaxial layer 01 is greater than the thickness of the second type epitaxial layer 02, and the thickness of the light emitting layer 03 is less than the thickness of the first type epitaxial layer 01. Preferably, the thickness of the first type epitaxial layer 01 is between 700 nm and 2 μm, and the thickness of the second type epitaxial layer 02 is between 100 and 200 nm. Preferably, the thickness of a single quantum well layer is 30 nm or less. In some examples, the light emitting layer 03 includes three or less quantum well layer pairs.

[0117]

[0129] In some embodiments, the first type epitaxial layer 01 may have multiple stacked first type epitaxial sublayers, and the second type epitaxial layer 02 may have multiple stacked second type epitaxial sublayers. For example, the top layer of the first type epitaxial sublayer is a P-cap layer connected with the bottom of the light emitting layer 03, and the bottom layer of the second type epitaxial sublayer is an N-cap layer connected with the top of the light emitting layer 03 to protect the quantum well layers from damage.

[0118]

[0130] Furthermore, the first type epitaxial layer 01 includes one or more reflective mirror layers 011 (not shown in FIG. 1). The reflective mirror layer 011 can be formed on the bottom surface of the first type epitaxial layer 01 or formed inside the first type epitaxial layer 01. The material of the reflective mirror layer is a combination of a dielectric material and a metallic material. Furthermore, the dielectric material is SiO2 or SiNx, where x is a positive integer, and preferably the metallic material is Au or Ag. In some embodiments, multiple reflective mirror layers 011 are horizontally formed on the first type epitaxial layer 01, one at a time at different horizontal levels, thereby dividing the first type epitaxial layer 01 into multiple layers.

[0119]

[0131] In some embodiments, a top contact 09 is formed on the top surface of the second type epitaxial layer 02. The conductivity type of the top contact 09 is the same as the type of the second type epitaxial layer 02, e.g., if the second type is n-type, the top contact 09 is an n-type top contact, or if the second type is p-type, the top contact 09 is a p-type top contact. In some embodiments, the top contact 09 is made of a metal or alloy, such as AuGe, AuGeNi, etc. The top contact 09 is used to form an ohmic contact between the top conductive layer 08 and the second type epitaxial layer 02 to optimize the electrical properties of the micro-LED. The diameter of the top contact 09 is about 20 nm to 50 nm, and the thickness of the top contact 09 is about 10 nm to 20 nm. In some embodiments, the top conductive layer 08 is transparent and conductive, for example, indium tin oxide (ITO), fluorine doped tin oxide (FTO), or the like.

[0120]

[0132] In some embodiments, the bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 01. The conductivity type of the bottom contact 06 is the same as that of the first type epitaxial layer 01, for example, if the first type epitaxial layer 01 is P type, the bottom contact 06 is also P type. Furthermore, since light is emitted upwards or downwards from the LED mesa structure consisting of or including the first type epitaxial layer 01, the second type epitaxial layer 02, and the light emitting layer 03, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09. The diameter of the top contact 09 can be as small as possible, so that the top contact 09 is as small as a dot on the top surface of the second type epitaxial layer 02. For example, the width of the top contact 09 is less than 1 / 5, 1 / 6, 1 / 10, or 1 / 20 of the width of the second type epitaxial layer 02 or mesa. In some embodiments, the diameter of the bottom contact 06 can also be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed below the bottom contact 06. The bottom connection structure 07 is used to connect with a bottom electrode, such as a contact pad of an IC backplane. Furthermore, the diameter of the bottom connection structure 07 is between 20 nm and 1 μm. Preferably, the diameter of the bottom connection structure 07 is between 800 nm and 1 μm. Furthermore, the center of the bottom contact 06 is vertically aligned with the center of the top contact 09. In some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is a transparent, conductive material, such as ITO or FTO, and so on. In addition, in some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is not transparent. The material of the bottom contact 06 and the bottom connection structure 07 may be a conductive metal. Preferably, the material of the bottom contact 06 may be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 may be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0121]

[0133] 1, the center of the bottom contact 06 is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact 06 is not vertically aligned with the center of the first type epitaxial layer 01.

[0122]

[0134] In some embodiments, to avoid surface carrier losses and non-radiative recombination at the sidewalls of the mesa structure, a regrown layer 04 is formed on the sidewalls of the light emitting layer 03 by a re-growth process, and even on the sidewalls of the first type epitaxial layer 01 and the second type epitaxial layer 02. For example, the regrown layer can be grown on a portion of the sidewall of the light emitting layer 03 or on the entire sidewall of the light emitting layer. "Entirely" means a substantial portion or all portions. Furthermore, the regrown layer 04 can be further formed on a portion of the first type epitaxial layer 01 or the entire sidewall of the first type epitaxial layer 01, and / or the regrown layer 04 can be further formed on a portion of the second type epitaxial layer 02 or the entire sidewall of the second type epitaxial layer 02.

[0123]

[0135] In some embodiments, the re-grown layer 04 is grown on at least a portion of the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and at least a portion of the sidewall of the second type epitaxial layer 02. In some embodiments, the re-grown layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In another embodiment, the re-grown layer 04 is grown on a portion of the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In some embodiments, the re-grown layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In another embodiment, the regrown layer 04 is grown on part of the sidewalls of the first type epitaxial layer 01, the entire sidewalls of the light emitting layer 03, and part of the sidewalls of the second type epitaxial layer 02.

[0124]

[0136] The regrown layer 04 on the sidewalls of the light-emitting layer 03 is not parallel to the horizontal direction in which the light-emitting layer 03 extends, as shown in FIG. 1. Furthermore, the light-emitting layer 03 includes a top surface, an end surface, and a bottom surface, and the regrown layer 04 is grown only on the end surfaces of the light-emitting layer 03, but not on the top and bottom surfaces of the light-emitting layer 03. Preferably, the inclination angle of the regrown layer 04 on the sidewalls of the light-emitting layer is 30 degrees to 90 degrees with respect to the horizontal direction of the light-emitting layer 03. That is, the regrown layer 04 is grown on the end surfaces of the light-emitting layer 03, but not on the top and bottom surfaces of the light-emitting layer 03. In addition, the light-emitting layer 03 includes a plurality of quantum well pairs. The regrown layer 04 is not parallel to the surfaces of each of the plurality of quantum well pairs. Here, the light-emitting layer 03 has a straight shape without bending. Preferably, the diameter of the mesa structure is 3 μm or less.

[0125]

[0137] Here, the material of the regrown layer 04 with intrinsic doped ions is the same as the material of the first type epitaxial layer 01 and / or the material of the second type epitaxial layer 02, but without intentional extrinsic doping ions. For example, when the material of the first type epitaxial layer 01 and the material of the second type epitaxial layer 02 are the same and the level of intentional ion doping of the material of the first type epitaxial layer 01 and the material of the second type epitaxial layer 02 are different, the material of the regrown layer 04 can be the same as the material of the underlying first type epitaxial layer 01 and the material of the second type epitaxial layer 02, but without intentional extrinsic doping ions. In another example, when the material of the first type epitaxial layer 01 and the material of the second type epitaxial layer 02 are not the same and the level of intentional ion doping of the material of the first type epitaxial layer 01 and the material of the second type epitaxial layer 02 are different, the material of the regrown layer 04 can be the same as the material of the first type epitaxial layer 01 or the material of the second type epitaxial layer 02, but without the intentional extrinsic doping ions. The light emitting layer is the active region of the PN junction formed by the first type epitaxial layer 01 and the second type epitaxial layer 02, and can be considered to be composed of two materials, the first type epitaxial layer 01 and the second type epitaxial layer 02. In some embodiments, the part of the material of the regrown layer covering the first type epitaxial layer 01 is the same material as the underlying first type epitaxial layer 01 but without the extrinsic intentional doping of the first type epitaxial layer 01, and the part of the material of the regrown layer covering the second type epitaxial layer 02 is the same material as the underlying second type epitaxial layer 02 but without the extrinsic intentional doping of the second type epitaxial layer 02. In some embodiments, the regrown layer 04 can have any intrinsic doping level or no doping level.In some embodiments, the parameters of the material growth, such as ambient / gas pressure, power, and materials for the regrowth process, are the same or similar to the parameters of the first type epitaxial layer 01 and / or the second type epitaxial layer 02. The material of the regrowth layer 04 should be lattice matched to the light emitting layer 03, the first type epitaxial layer 01, and / or the second type epitaxial layer 02. Preferably, the material of the regrowth layer 04 is single crystalline, the material of the first epitaxial layer 01 is single crystalline, and the material of the second epitaxial layer 02 is single crystalline. Furthermore, the material of the regrown layer 04 is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, or any combination thereof. In another embodiment, the material of the regrown layer 04 is free of intentional doping ions and is not the same as the material of the first type epitaxial layer or the material of the second type epitaxial layer 02.

[0126]

[0138] The resistance of the re-grown layer 04 is greater than the resistance of the light-emitting layer 03, and the re-grown layer 04 is not conductive, thereby ensuring the normal operation of the micro LED structure and preventing the carriers from spreading outside the light-emitting layer 03. Preferably, the band gap of the re-grown layer 04 is greater than the band gap of the light-emitting layer 03. Furthermore, the thickness of the re-grown layer 04 is less than the thickness of the light-emitting layer 03, preferably the thickness of the re-grown layer 04 is less than 10 nm or 100 nm. In another embodiment, the thickness of the re-grown layer 04 is equal to or greater than the thickness of the light-emitting layer 03.

[0127]

[0139] Hereinafter, the details of the micro LED panel and the method for manufacturing the micro LED panel will be described in conjunction with the drawings.

[0128]

[0140] EMBODIMENT 1

[0141] The micro LED panel of embodiment 1 includes a micro LED structure array. Referring to Figure 1, the micro LED structure in the micro LED panel includes mesa structures including 01, 02 and 03, a re-grown layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09 and a top conductive layer 08. A dielectric layer 05 is formed between adjacent mesa structures.

[0129]

[0142] The mesa structure includes, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. A regrowth layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, on the entire sidewall of the light emitting layer 03, and on a part of the sidewall of the second type epitaxial layer 02. Furthermore, the regrowth layer 04 is very thin, such as 5 nm, and therefore, in some embodiments, the regrowth layer 04 is transparent.

[0130]

[0143] A dielectric layer 05 is formed between adjacent mesa structures. Furthermore, the dielectric layer 05 is formed on the surface of the regrown layer 04 between adjacent mesa structures. The top end of the regrown layer 04 further protrudes into the dielectric layer 05. Preferably, the top end of the regrown layer 04 is connected to the adjacent light emitting layer 03 and the adjacent first type epitaxial layer 01. In addition, the top end of the regrown layer 04 protruding into the dielectric layer 05 is parallel to the bottom surface of the second type epitaxial layer 02. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, and so on. In addition, in some embodiments, the material of the dielectric layer 05 is transparent.

[0131]

[0144] Here, the top of the regrown layer 04 is higher than the top of the light emitting layer 03, the bottom of the regrown layer 04 is aligned with the bottom of the first type epitaxial layer 01, and the regrown layer 04 is formed below the first type epitaxial layer 01. An opening is formed in the regrown layer 04 and in the dielectric layer 05. A bottom contact 06 is formed in the opening at the bottom of the first type epitaxial layer 01. A bottom connection structure 07 is also formed in the opening and below the bottom contact 06.

[0132]

[0145] In another embodiment, referring to Fig. 2, a regrown layer 04 is grown on a part of the sidewall of the first type epitaxial layer 01, on the entire sidewall of the light emitting layer 03, and on a part of the sidewall of the second type epitaxial layer 02. The top of the regrown layer 04 is higher than the top of the light emitting layer 03, and the bottom of the regrown layer 04 is lower than the bottom of the light emitting layer 03. An opening is formed in the dielectric layer 05. A bottom contact 06 is formed in the opening at the bottom of the first type epitaxial layer 01. A bottom connection structure 07 is also formed in the opening and at the bottom of the bottom contact 06.

[0133]

[0146] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously over the entire micro LED panel in this embodiment. In another embodiment, referring to FIG. 16, the top conductive layer 08 is formed over the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0134]

[0147] In some embodiments, the method for manufacturing the micro LED panel described above in this embodiment 1 includes the following steps:

[0135]

[0148] Referring to FIG. 3, step 1 involves providing an epitaxial structure on a semiconductor substrate 00'.

[0136]

[0149] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc. The epitaxial structure is grown on the substrate 00'.

[0137]

[0150] Referring to FIG. 4, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0138]

[0151] Here, the epitaxial structure is etched from top to bottom by a conventional plasma etching process.

[0139]

[0152] Referring to FIG. 5, step 3 includes forming a first mask pattern R1 on the semiconductor substrate 00' to cover the sidewall of the first type epitaxial layer 01 and the sidewall of the light emitting layer 03.

[0140]

[0153] Here, the first mask pattern R1 is formed by a conventional photolithography process, covering the sidewalls of the light emitting layer 03, the top and sidewalls of the first type epitaxial layer 01, and a part of the second type epitaxial layer 02.

[0141]

[0154] Referring to FIG. 6, step 4 includes depositing a first dielectric layer 05′ on the substrate 00′ between adjacent mesa structures, where the top of the first dielectric layer 05′ is lower than the bottom of the light emitting layer 03.

[0142]

[0155] Here, a first dielectric layer 05' is deposited by a conventional vapor deposition process on the semiconductor substrate 00' protected by the first mask pattern R1 and on the surface of the first mask pattern R1. The top of the first dielectric layer 05' is lower than the bottom of the light emitting layer 03.

[0143]

[0156] The bottom of the first mask pattern R1 is lower than the bottom of the light emitting layer 03, and therefore the top of the first dielectric layer 05' is lower than the top of the second type epitaxial layer 02, and then the re-grown layer 04 can be formed on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and part of the sidewall of the second type epitaxial layer 02. Thus, the position of the re-grown layer 04 is determined by the bottom of the first mask pattern R1.

[0144]

[0157] Then, step 4 additionally includes removing the first mask pattern R1.

[0145]

[0158] Here, the first mask pattern R1 is removed by a chemical etching process.

[0146]

[0159] Referring to FIG. 7, step 5 involves forming a regrowth layer 04 on the entire sidewall of the light emitting layer 03 and on at least a portion of the sidewall of the first epitaxial layer 01 by an epitaxial material regrowth process.

[0147]

[0160] Here, the re-growth layer 04 is directly grown on the entire sidewall of the light emitting layer 03, on the top and entire sidewall of the first type epitaxial layer 01, on a part of the sidewall of the second type epitaxial layer 02, and deposited on the top surface of the first dielectric layer 01. In this re-growth process, the temperature is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds. The material for the re-growth process is the same as the material of the first type epitaxial layer 01 and / or the material of the second type epitaxial layer 02, but without intentional doping ions. In some embodiments, the re-growth layer 04 is further formed on at least a part of the sidewall of the second type epitaxial layer 02 when the top of the first dielectric layer 01 is lower than the bottom of the light emitting layer 03.

[0148]

[0161] In another embodiment, referring to FIG. 15, in step 5, before growing the regrown layer, step 5 further includes forming a second mask pattern R2 covering the top and part of the sidewall of the first type epitaxial layer 01, and the regrown layer 04 is formed on the entire sidewall of the light emitting layer 03 and part of the sidewall of the first type epitaxial layer 01. After forming the regrown layer 04, step 5 further includes removing the second mask pattern R2. Thus, referring to FIG. 2, the regrown layer 04 can be formed on part of the first type epitaxial layer 01, on the entire sidewall of the light emitting layer 03, and on part of the sidewall of the second type epitaxial layer 02. Therefore, the position of the regrown layer 04 is determined by the position of the bottom of the second mask pattern R2.

[0149]

[0162] Referring to FIG. 10, step 7 includes forming a bottom contact 06 in the regrown layer 04 on the top surface of the first type epitaxial layer 01, and forming a second dielectric layer 02 on the regrown layer 04 having an opening exposing a top of the bottom contact 06.

[0150]

[0163] Now, referring to FIG. 8, an opening is formed in the regrown layer 04 on the top surface of the first type epitaxial layer 01 by a plasma etching process. Then, referring to FIG. 9, the bottom contact 06 is first deposited in the opening while covering the other areas except the first opening with a mask, connecting the bottom contact 06 to the first type epitaxial layer 01 and removing the mask. Then, referring to FIG. 10, a second dielectric layer 05″ is deposited on the surface of the regrown layer 04 by a conventional chemical vapor deposition process. Then, another opening is formed in the second dielectric layer 05″ to expose the top of the bottom contact 06.

[0151]

[0164] In another embodiment, step 7 includes forming a second dielectric layer 05'' on the regrown layer 04, forming an opening in the second dielectric layer 05'' on the first type epitaxial layer 01, and filling the bottom contact 06 in the opening. Here, the second dielectric layer 05'' is deposited on the surface of the regrown layer 04 by a conventional chemical vapor deposition process. An opening is then formed in the second dielectric layer 02 and in the regrown layer 04 on top of the first type epitaxial layer 01. Then the bottom contact 06 is deposited in the opening and connected to the first type epitaxial layer 01.

[0152]

[0165] In another embodiment, the bottom contact 06 can be formed before depositing the regrown layer 04. The regrown layer 04 is then deposited on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type epitaxial layer 01, and on the bottom contact 06. Next, a second dielectric layer 02 is formed on the regrown layer 04. Finally, an opening is formed in the second dielectric layer 02 and the regrown layer 04 to expose the bottom contact 06.

[0153]

[0166] Referring to FIG. 11, step 8 includes forming a lower connection structure 07 in the opening.

[0154]

[0167] Here, the material of the bottom connection structure 07 is deposited in the openings and on top of the bottom contacts 06 by conventional vapor deposition processes.

[0155]

[0168] Referring to FIG. 12, step 9 includes bonding the first type epitaxial layer 01 and the lower connecting structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0156]

[0169] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then, the lower connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process, such as a laser lift-off method.

[0157]

[0170] Referring to FIG. 14, step 10 includes forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0158]

[0171] Now, referring to Figure 13, a top contact 09 is deposited on top of the second type epitaxial layer 02 while protecting other areas with a mask, which is then removed. Next, referring to Figure 14, a top conductive layer 08 is deposited on top of the second epitaxial layer 02 by a conventional vapor deposition process.

[0159]

[0172] In some embodiments, the dielectric layer 05 in FIG. 1 is now formed by a first dielectric layer 05' and a second dielectric layer 05''.

[0160]

[0173] EMBODIMENT 2

[0174] The micro LED panel of embodiment 2 includes a micro LED structure array. Figure 17 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., embodiment 2) of the present disclosure.

[0161]

[0175] Referring to Fig. 17, the micro LED structure includes a mesa structure, a regrowth layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08. A dielectric layer 05 is formed between adjacent mesa structures. Here, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In another embodiment, the regrowth layer 04 is filled between adjacent light emitting layer 03 and second type epitaxial layer 02, like a ring around the mesa structure.

[0162]

[0176] The mesa structure includes, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. A regrowth layer 04 is grown on at least the sidewall of the light emitting layer 03. Furthermore, the regrowth layer 04 is grown on the entire sidewall of the light emitting layer 03, a part of the first type epitaxial layer 01, and the entire sidewall of the second type epitaxial layer 02. The inclination angle of the regrowth layer 04 on the sidewall of the light emitting layer 03 is 30 degrees to 90 degrees with respect to the light emitting layer 03. The top end of the regrowth layer 03 further protrudes along the top surface of the dielectric layer 05. The regrowth layer 04 along the dielectric layer 05 is parallel to the bottom surface of the second type epitaxial layer 02. In addition, the top end of the regrown layer 04 along and protruding above the top of the dielectric layer 05 is connected to the adjacent light emitting layer 03 and to the adjacent second type epitaxial layer 02. Furthermore, the regrown layer 04 is very thin, less than 10 nm, such as 5 nm, and thus in some embodiments the regrown layer 04 is transparent.

[0163]

[0177] Furthermore, the bottom of the regrown layer 04 is lower than the bottom of the light emitting layer 03. Also, the top of the regrown layer 04 is aligned with the top of the epitaxial layer 02 of the second type.

[0164]

[0178] A dielectric layer 05 is further formed at the bottom of the mesa structure. An opening is formed in the dielectric layer 05. A bottom contact 06 is formed in the opening at the bottom of the first type epitaxial layer 01. Also, a bottom connection structure 07 is formed in the opening at the bottom of the bottom contact 06. In addition, in some embodiments, the material of the dielectric layer 05 is transparent.

[0165]

[0179] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously over the entire micro LED panel. In other embodiments, the top conductive layer 08 is formed over the top contact and a portion of the top surface of the second type epitaxial layer 02.

[0166]

[0180] The method for manufacturing the aforementioned micro LED panel in embodiment 2 includes the following steps:

[0167]

[0181] 18-27 illustrate steps of a method for manufacturing the micro LED panel in FIG. 17 according to some embodiments (e.g., embodiment 2) of the present disclosure.

[0168]

[0182] Referring to FIG. 18, step 1 involves providing an epitaxial structure on a semiconductor substrate 00'.

[0169]

[0183] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0170]

[0184] Referring to FIG. 19, step 2 involves patterning the epitaxial structure to form a mesa structure.

[0171]

[0185] Here, the epitaxial structure is etched from top to bottom by a conventional plasma etching process.

[0172]

[0186] Referring to FIG. 20, step 3 includes forming a mask pattern on the semiconductor substrate 00 ′ to cover the first type epitaxial layer 01 .

[0173]

[0187] Here, the mask pattern R1 is formed by photolithography to cover the top and part of the sidewall of the first type epitaxial layer 01. The material of the mask pattern R1 is photoresist. In another embodiment, the material of the mask pattern R1 can be another material, such as a dielectric material.

[0174]

[0188] Here, the bottom of the mask pattern R1 is higher than the bottom of the first-type epitaxial layer 01. Therefore, the regrown layer 04 is further formed on a part of the first-type epitaxial layer 01. Therefore, the position of the regrown layer 04 is determined by the position of the bottom of the mask pattern R1.

[0175]

[0189] Referring to FIG. 21, step 4 includes forming a regrowth layer 04 on the sidewalls of the light emitting layer 03, the sidewalls of the second type epitaxial layer 02, and a portion of the sidewalls of the first type epitaxial layer 01 by an epitaxial material regrowth process.

[0176]

[0190] Here, the regrowth layer 04 is grown on the sidewalls of the light emitting layer 03, on the sidewalls of the second epitaxial layer 02, on a part of the sidewalls of the first epitaxial layer 01, and on the exposed top surface of the semiconductor substrate 00'. In this regrowth process, the temperature is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds. The material for the regrowth process is the same as the material of the first type epitaxial layer and the material of the second type epitaxial layer, but without intentional doping ions.

[0177]

[0191] Referring to FIG. 22, step 5 involves removing the mask pattern R1.

[0178]

[0192] Here, the mask pattern R1 is removed by a conventional chemical etching process.

[0179]

[0193] Referring to FIG. 24, step 6 includes forming a bottom contact 06 on the surface of the first type epitaxial layer 01 and forming a dielectric layer 05 on the regrown layer 04 and on the top and sidewalls of the first type epitaxial layer 01 between adjacent mesa structures, the dielectric layer 05 having an opening exposing the top of the bottom contact 06.

[0180]

[0194] Here, referring to Fig. 23, the bottom contact 06 is first formed on the top of the mesa structure. Then, referring to Fig. 24, a dielectric layer 05 is deposited on the surface of the regrown layer 04, on the sidewalls and on the top of the first type epitaxial layer 01 by a conventional chemical vapor deposition process. An opening is then formed in the dielectric layer 05 on top of the first type epitaxial layer 01 by a dry etching process. Next, an opening is formed by a plasma etching process to expose the bottom contact 06.

[0181]

[0195] In some embodiments, step 6 includes the following steps: first, an initial dielectric layer is deposited on top of the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. Then, the top of the initial dielectric layer is planarized towards the top of the first type epitaxial layer 01, and a bottom contact 06 is deposited on the first type epitaxial layer 01. Then, another dielectric layer is deposited on top of the initial dielectric layer and on the sidewalls and top of the mesa structure to form a dielectric layer 05 covering the top contact 06. Then, an opening is formed in the dielectric layer to expose the bottom contact 06. The dielectric layer 05 is formed by the initial dielectric layer and another dielectric layer.

[0182]

[0196] Referring to FIG. 25, step 7 includes forming a lower connection structure 07 in the opening.

[0183]

[0197] Here, the material of the bottom connection structure 07 is deposited in the openings and on top of the bottom contacts 06 by conventional vapor deposition processes.

[0184]

[0198] Referring to FIG. 26, step 8 includes bonding the first type epitaxial layer 01 and the lower connection structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0185]

[0199] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then, the lower connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process, such as a laser lift-off method.

[0186]

[0200] Referring to FIG. 27, step 9 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0187]

[0201] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, while protecting other areas with a mask. A top conductive layer 08 is then deposited on top of the second epitaxial layer 02 by a conventional vapor deposition process.

[0188]

[0202] EMBODIMENT 3

[0203] To solve the problems in the related art, a micro LED panel is provided in an embodiment of the present invention.

[0189]

[0204] The micro LED panel of embodiment 3 includes a micro LED structure array. Figure 28 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., embodiment 3) of the present disclosure.

[0190]

[0205] Referring to Fig. 28, the micro LED structure includes a mesa structure, a regrowth layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08. The mesa structure includes, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. Here, the regrowth layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In some embodiments, the regrowth layer 04 is grown on at least a portion of the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and at least a portion of the sidewall of the second type epitaxial layer 02. Furthermore, in some embodiments, the re-grown layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In another embodiment, the re-grown layer 04 is grown on a portion of the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. In some embodiments, the re-grown layer 03 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and a portion of the sidewall of the second type epitaxial layer 02. In another embodiment, the re-grown layer 03 is grown on a portion of the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and a portion of the sidewall of the second type epitaxial layer 02.

[0191]

[0206] A dielectric layer 05 is formed between adjacent mesa structures. The dielectric layer 05 is further formed on the lower part of the mesa structures. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In addition, in some embodiments, the material of the dielectric layer 05 is transparent.

[0192]

[0207] A bottom contact 06 and a bottom connection structure 07 are formed in the dielectric layer 05 below the first type epitaxial layer 01. In addition, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously over the entire micro LED panel in this embodiment. In other embodiments, the top conductive layer 08 is formed over the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0193]

[0208] The top end of the regrown layer 04 further protrudes along the top surface of the dielectric layer 05. Moreover, the regrown layer 04 protruding along the dielectric layer 05 is parallel to the top surface of the dielectric layer 05. Preferably, the regrown layer 04 protruding along the top of the dielectric layer 05 is connected to the adjacent second type epitaxial layer 02. In addition, the regrown layer 04 is further formed on the bottom surface of the first type epitaxial layer 01. A bottom contact 06 is further formed in the regrown layer 04.

[0194]

[0209] The method for manufacturing the aforementioned micro LED panel in this embodiment 3 includes the following steps:

[0195]

[0210] 29-37 illustrate steps of a method for manufacturing the micro LED panel in FIG. 28 according to some embodiments (e.g., embodiment 3) of the present disclosure.

[0196]

[0211] 29, step 1 includes providing an epitaxial structure on a semiconductor substrate 00'. The epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02.

[0197]

[0212] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0198]

[0213] Referring to FIG. 30, step 2 involves forming a mesa structure by patterning the entire epitaxial structure from top to bottom.

[0199]

[0214] Here, the epitaxial structure is etched from top to bottom by a conventional plasma etching process.

[0200]

[0215] Referring to FIG. 31, step 3 includes forming a regrowth layer 04 on the entire sidewall of the light emitting layer 03, on at least a portion of the sidewall of the first type epitaxial layer 01, and on at least a portion of the sidewall of the second type epitaxial layer 02 by an epitaxial material regrowth process.

[0201]

[0216] Here, the regrowth layer 04 is regrown on the entire sidewalls of the light emitting layer 03, the first type epitaxial layer 01, and the second type epitaxial layer 02. Furthermore, the regrowth layer 04 is further formed on the top surface of the first type epitaxial layer 01 and on the exposed top surface of the semiconductor substrate 00'. In this regrowth process, the temperature is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds. The material of the regrowth process is the same as that of the first type epitaxial layer and that of the second type epitaxial layer, but without intentional doping ions.

[0202]

[0217] In another embodiment, the regrown layer 04 is further grown on at least a part of the sidewall of the second type epitaxial layer 02, on the entire sidewall of the fist type epitaxial layer 01, and on the entire sidewall of the light emitting layer 03, but not on the semiconductor substrate 00'. Thus, in step 3, before forming the regrown layer 04, step 3 further comprises forming a mask pattern covering a part of the sidewall of the second type epitaxial layer 02. Then, the regrown layer is grown on the entire sidewall of the light emitting layer 03, the entire sidewall of the first type epitaxial layer 01, and a part of the sidewall of the second type epitaxial layer 02. After forming the regrown layer 04, step 3 further comprises removing the mask pattern.

[0203]

[0218] In another embodiment, the regrown layer 04 is further grown on at least a part of the sidewall of the first type epitaxial layer 01, on the entire sidewall of the light emitting layer 03, and on the entire sidewall of the second type epitaxial layer 02, but not on the top of the first type epitaxial layer 01. Thus, in step 3, before forming the regrown layer 04, step 3 further comprises forming a mask pattern covering the top and part of the sidewall of the first type epitaxial layer 01. Then, the regrown layer 04 is grown on the entire sidewall of the light emitting layer 03, the entire sidewall of the second type epitaxial layer 02, and part of the sidewall of the first type epitaxial layer 01. After forming the regrown layer 04, step 3 further comprises removing the mask pattern.

[0204]

[0219] In some embodiments, the regrown layer 04 is grown on at least a portion of the sidewalls of the first type epitaxial layer 01 and at least a portion of the second type epitaxial layer 02, on the entire sidewalls of the light emitting layer 03, but not on the top of the first type epitaxial layer 01 and on the top of the substrate 00'. Thus, before forming the regrown layer 04, step 3 further includes forming a first mask pattern covering the top and part of the sidewalls of the first type epitaxial layer 01, covering a part of the sidewalls of the second type epitaxial layer 02, and the exposed top surface of the semiconductor substrate 00'. Then, the regrown layer 04 is grown on the entire sidewalls of the light emitting layer 03, the entire sidewalls of the second type epitaxial layer 02, and the sidewalls of the first type epitaxial layer 01. After forming the regrown layer 04, step 3 further includes removing the mask pattern.

[0205]

[0220] 32-24, step 4 includes forming an opening in the regrown layer 04 on top of the first type epitaxial layer 01 and forming a bottom contact 06 on a surface of the first type epitaxial layer 01 in the opening. Then, forming a dielectric layer 05 on top of the regrown layer 04 and forming a second opening in the dielectric layer 05 to expose the bottom contact 06.

[0206]

[0221] Now, referring to Fig. 32, a first opening is formed in the regrown layer 04 on top of the first type epitaxial layer 01. Then, referring to Fig. 33, a bottom contact 06 is deposited in the first opening. Then, referring to Fig. 34, a dielectric layer 05 is deposited on top of the regrown layer 04. Then, a second opening is formed in the dielectric layer 05 on top of the bottom contact 06, exposing the bottom contact 06.

[0207]

[0222] In another embodiment, a dielectric layer is first deposited over the regrowth ring, the sidewalls and the top of the first type epitaxial layer. An opening is then formed in the dielectric layer over the first type epitaxial layer. A bottom contact is then formed in the opening and connected to the first type epitaxial layer.

[0208]

[0223] In some embodiments, step 4 includes the following steps: first, an initial dielectric layer is deposited on the regrowth ring, on the sidewalls and on the top of the first type epitaxial layer. Then, the top of the initial dielectric layer is planarized towards the top of the first type epitaxial layer, and a bottom contact is deposited on the first type epitaxial layer. Then, another dielectric layer is deposited on the initial dielectric layer and the sidewalls and top of the mesa structure, covering the top contact to form a completed dielectric layer. Then, an opening is formed in the dielectric layer to expose the bottom contact.

[0209]

[0224] The opening is formed by a conventional plasma etching process and the bottom contact 06 is formed by a conventional vapor deposition process.

[0210]

[0225] In another embodiment, the bottom contact 06 can be formed before depositing the regrown layer 04. Then, the regrown layer 04 is deposited on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type epitaxial layer 01, and on the bottom contact 06. Next, a dielectric layer 05 is formed on the regrown layer 04. Finally, an opening is formed in the dielectric layer 05 and the regrown layer 04 to expose the bottom contact 06.

[0211]

[0226] Referring to FIG. 35, step 5 includes forming a lower connection structure 07 in the opening.

[0212]

[0227] Here, the material of the bottom connection structure 07 is deposited in the openings and on top of the bottom contacts by conventional vapor deposition processes.

[0213]

[0228] Referring to FIG. 36, step 6 includes bonding the first type epitaxial layer 01 and the lower connection structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0214]

[0229] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then, the lower connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process, such as a laser lift-off method.

[0215]

[0230] Referring to FIG. 37, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02.

[0216]

[0231] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02 while protecting other areas with a mask, which is then removed. A top conductive layer 08 is then deposited on the second epitaxial layer 02 by a conventional vapor deposition process.

[0217]

[0232] EMBODIMENT 4

[0233] The micro LED panel of embodiment 4 includes a micro LED structure array. Figure 38 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., embodiment 4) of the present disclosure.

[0218]

[0234] Referring to FIG. 38, the micro LED structure includes a mesa structure, a re-grown layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0219]

[0235] The mesa structure consists of or includes, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. Here, a regrowth layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. Furthermore, the regrowth layer 04 completely fills the space between adjacent mesa structures. That is, the regrowth layer 04 is further used to separate the sidewalls of the mesa structures from each other. The width of the top of the regrowth layer 04 is the same as the width of the top of the space between adjacent mesa structures.

[0220]

[0236] Furthermore, the regrown layer 04 is very thin, less than 10 nm, such as 5 nm, and therefore in some embodiments the regrown layer 04 is transparent. The regrown layer 04 is further formed at the bottom of the mesa structure. A bottom contact 06 and a bottom connection structure 07 are formed in the regrown layer 04 below the mesa structure, and the bottom contact 06 and the bottom connection structure 07 are electrically connected to the first type epitaxial layer 01.

[0221]

[0237] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously over the entire micro LED panel in this embodiment. In another embodiment, referring to FIG. 47, the top conductive layer 08 is formed over the top contact and a portion of the top surface of the second type epitaxial layer 02.

[0222]

[0238] The method for manufacturing the aforementioned micro LED panel in this embodiment 4 includes the following steps:

[0223]

[0239] 39-46 illustrate steps of a method for manufacturing the micro LED panel in FIG. 38 according to some embodiments of the present disclosure (e.g., embodiment 4).

[0224]

[0240] Referring to FIG. 39, step 1 involves providing an epitaxial structure on a semiconductor substrate 00'.

[0225]

[0241] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0226]

[0242] Referring to FIG. 40, step 2 involves forming a mesa structure by patterning the mesa structure from top to bottom.

[0227]

[0243] Here, the epitaxial structure is etched from top to bottom by a conventional plasma etching process.

[0228]

[0244] Referring to FIG. 41, step 3 involves forming a completely filled regrown layer 04 within the spaces of the adjacent mesa structures and over the top of the semiconductor substrate 00'.

[0229]

[0245] Here, the regrowth layer 04 is regrown on the entire sidewalls of the light emitting layer 03, the first type epitaxial layer 01, and the second type epitaxial layer 02. Moreover, the regrowth layer 04 is further formed on the top surface of the first type epitaxial layer 01 and on the exposed top surface of the semiconductor substrate 00'. In this regrowth process, the temperature is 400°C-1000°C, and the regrowth time is 5 seconds-1000 seconds. The material for the regrowth process is the same as the material of the first type epitaxial layer 01 and / or the material of the second type epitaxial layer 02, but without intentional doping ions.

[0230]

[0246] Referring to FIG. 42, step 4 includes forming an opening in the regrown layer 04 over the first type epitaxial layer 01, and referring to FIG. 43, it includes forming a bottom contact 06 on the surface of the first type epitaxial layer 01 in the opening.

[0231]

[0247] Here, the opening is formed by a conventional plasma etching process and the bottom contact 06 is formed by a conventional vapor deposition process.

[0232]

[0248] In another embodiment, the bottom contact 06 can be formed before depositing the regrown layer 04. The regrown layer 04 is then deposited on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type epitaxial layer 01, and on the bottom contact 06. Finally, an opening is formed in the regrown layer 04 to expose the bottom contact 06.

[0233]

[0249] Referring to FIG. 44, step 5 includes forming a lower connection structure 07 in the opening.

[0234]

[0250] Here, the material of the bottom connection structure 07 is deposited in the openings and on top of the bottom contacts by conventional vapor deposition processes.

[0235]

[0251] Referring to FIG. 45, step 6 includes bonding the lower connection structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0236]

[0252] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then, the lower connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process, such as a laser lift-off method.

[0237]

[0253] Referring to FIG. 46, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02.

[0238]

[0254] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02 while protecting other areas with a mask, which is removed after the top contact 09 is formed. A top conductive layer 08 is then deposited on top of the second epitaxial layer 02 by a conventional vapor deposition process.

[0239]

[0255] EMBODIMENT 5

[0256] The micro LED panel of embodiment 5 includes a micro LED structure array. Figure 47 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., embodiment 5) of the present disclosure.

[0240]

[0257] Referring to FIG. 47, the micro LED structure includes a mesa structure, a re-grown layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0241]

[0258] The mesa structure includes, from bottom to top, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. Here, a regrown layer 04 is grown on the entire sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and the entire sidewall of the second type epitaxial layer 02. Moreover, the regrown layer 04 completely fills the space between adjacent mesa structures. The width of the top of the regrown layer 04 is the same as the width of the top of the space between adjacent mesa structures.

[0242]

[0259] Furthermore, the re-grown layer 04 is very thin, less than 10 nm, such as 5 nm, and therefore in some embodiments, the re-grown layer 04 is transparent. A dielectric layer 05 is further formed at the bottom of the mesa structure and at the bottom of the re-grown layer 04. A bottom connection structure 07 is formed in the dielectric layer 05 and is electrically connected to the first type epitaxial layer 01. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In addition, in some embodiments, the material of the dielectric layer 05 is transparent.

[0243]

[0260] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is now formed on the top contact and a portion of the top surface of the second type epitaxial layer 02.

[0244]

[0261] The method for manufacturing the aforementioned micro LED panel in this embodiment 5 includes the following steps:

[0245]

[0262] 48-55 illustrate steps of a method for manufacturing the micro LED panel in FIG. 47 according to some embodiments (e.g., embodiment 5) of the present disclosure.

[0246]

[0263] Referring to FIG. 48, step 1 includes providing an epitaxial structure on a semiconductor substrate 00', which includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02.

[0247]

[0264] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 02, and a second type epitaxial layer 03. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0248]

[0265] Referring to FIG. 49, step 2 involves forming a mesa structure by patterning the epitaxial structure from top to bottom.

[0249]

[0266] Here, the epitaxial structure is etched from top to bottom by a conventional plasma etching process.

[0250]

[0267] Referring to FIG. 50, step 3 involves forming a regrowth layer 04 that completely fills the spaces of the adjacent mesa structures and across the sidewalls of the epitaxial structure by an epitaxial material regrowth process.

[0251]

[0268] Here, the regrown layer 04 is regrown on the entire sidewalls of the light emitting layer 03, the first type epitaxial layer 01, and the second type epitaxial layer 02. Furthermore, the regrown layer 04 is further formed on the top surface of the first type epitaxial layer 01 and on the exposed top surface of the semiconductor substrate 00'. The regrown layer 04 is then etched and stopped on the top of the mesa structure to expose the top of the mesa structure.

[0252]

[0269] In this regrowth process, the temperature is 400° C.-1000° C. and the regrowth time is 5 s-1000 s. The material of the regrowth process is the same as the material of the first type epitaxial layer 01 and / or the material of the second type epitaxial layer 02, but without intentional doping ions.

[0253]

[0270] Referring to FIG. 51, step 4 involves forming a dielectric layer 05 over the top of the first type epitaxial layer 01 and over the top of the regrown layer 04.

[0254]

[0271] Here, a dielectric layer 05 is deposited on top of the first type epitaxial layer 01 and on top of the regrown layer 04 by a conventional chemical vapor deposition process.

[0255]

[0272] Referring to FIG. 52, step 5 includes forming an opening in the dielectric layer 05 over the first type epitaxial layer 01 and forming a bottom contact 06 on the surface of the first type epitaxial layer 01 in the opening.

[0256]

[0273] Here, the opening is formed by a conventional plasma etching process and the bottom contact 06 is formed by a conventional vapor deposition process.

[0257]

[0274] In another embodiment, the bottom contact can be formed before depositing the regrowth layer. Then, a regrowth layer is deposited on the sidewalls of the light emitting layer, on the sidewalls and top of the first type epitaxial layer, and on the bottom contact. Next, a dielectric layer is formed on the regrowth layer. Finally, an opening is formed in the dielectric layer and the regrowth layer to expose the bottom contact.

[0258]

[0275] Referring to FIG. 53, step 6 includes forming a lower connection structure 07 in the opening.

[0259]

[0276] Here, the material of the bottom connection structure 07 is deposited in the openings and on top of the bottom contacts 06 by conventional vapor deposition processes.

[0260]

[0277] Referring to FIG. 54, step 7 includes bonding the lower connection structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0261]

[0278] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then, the lower connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process, such as a laser lift-off method.

[0262]

[0279] Referring to FIG. 55, step 8 involves forming a top contact 09 and a top conductive layer 08 on top of the second type epitaxial layer 02.

[0263]

[0280] Here, the top contact 09 is deposited on top of the second type epitaxial layer 02 while protecting other areas with a mask, which is removed after the top contact 09 is formed. Then, a top conductive layer 08 is formed on top of the second type epitaxial layer 02 and on the top and sidewalls of the top contact 09 while protecting other areas with another mask, which is removed after the top conductive layer 08 is formed. Furthermore, the top conductive layer 08 is formed on a part of the top surface of the second type epitaxial layer 02 without covering the entire second type epitaxial layer 02. The top contact 09 and the top conductive layer 08 are formed by a conventional vapor deposition process.

[0264]

[0281] Those skilled in the art will appreciate that the microdisplay panel is not limited to the structures described above and may include more or fewer components than those shown, or some components may be combined, or different components may be utilized.

[0265]

[0282] Those skilled in the art will understand that all or part of the steps for implementing the above embodiments can be implemented by hardware, or by a program instructing related hardware. The program can be stored in a flash memory, a conventional computer device, a central processing module, a control module, etc.

[0266]

[0283] The above description is merely an embodiment of the present disclosure, and the present disclosure is not limited to those embodiments. Any modifications, equivalent replacements, and improvements made without departing from the concept and principle of the present disclosure shall be within the protection scope of the present disclosure.

[0267]

[0284] Further embodiments also include various subsets of the above embodiments, including the embodiments shown in Figures 1-55 combined or otherwise rearranged in various other embodiments.

[0268]

[0285] Although the detailed description includes many details, these should not be interpreted as limiting the scope of the present invention, but merely as illustrating different examples and aspects of the present invention. It should be understood that the scope of the present invention includes other embodiments not detailed above. For example, the above-described techniques can also be applied to the integration of control circuitry other than pixel drivers for functional devices other than LEDs and OLEDs. Examples of non-LED devices include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuitry include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0269]

[0286] The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variations thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the following claims and the principles and novel features disclosed herein.

[0270]

[0287] Features of the present invention can be implemented in, using, or with the aid of a computer program product, such as a storage medium(s) or computer-readable storage medium(s) having stored therein / within instructions that can be used to program a processing system to perform any of the features presented herein. The storage medium can include high-speed random access memory, such as, but not limited to, DRAM, SRAM, DDR RAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices. The memory optionally includes one or more storage devices located remotely from the CPU. The memory, or alternatively the non-volatile memory devices in the memory, include non-transitory computer-readable storage media.

[0271]

[0288] When stored on any machine-readable medium(s), features of the present invention may be embodied in software and / or firmware to control the hardware of a processing system and to enable the processing system to utilize the results of the present invention and interact with other mechanisms. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0272]

[0289] Although terms such as "first," "second," and the like may be used herein to describe various elements or steps, it will be understood that these elements or steps should not be limited by these terms. These terms are used merely to distinguish one element or step from another.

[0273]

[0290] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the claims. When used in the description of the embodiments and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term "and / or" when used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and / or "comprising" when used herein specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0274]

[0291] As used herein, the term "if" may be interpreted to mean "when" a stated precondition is true or "upon" a stated precondition is true or "in response to determining" a stated precondition is true or "in accordance with a determination" a stated precondition is true or "in response to detecting" a stated precondition is true, depending on the context. Similarly, the phrases "if a stated precondition is determined to be true" or "if a stated precondition is true" or "when a stated precondition is true" may be interpreted to mean "as soon as" a stated precondition is determined to be true or "in response to determining" a stated precondition is true or "in accordance with a determination" a stated precondition is true or "as soon as" a stated precondition is detected to be true or "in response to detecting" a stated precondition is true, depending on the context.

[0275]

[0292] The above description, for purposes of illustration, has been written with reference to specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or to limit the scope of the claims to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. The embodiments have been chosen and described in order to best explain the principles of operation and practical application, and thereby enable others skilled in the art to best utilize the invention and various embodiments.

Claims

1. A micro LED panel having an array of micro LED structures, At least one micro LED structure, comprising at least a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on at least a portion of the sidewalls of the first type epitaxial layer, on all of the sidewalls of the light emitting layer, and on a portion of the sidewalls of the second type epitaxial layer; A micro LED panel comprising a micro LED structure comprising:

2. 10. The micro LED panel of claim 1, wherein a dielectric layer is formed between adjacent mesa structures, and a top end of said re-grown layer protrudes further into said dielectric layer.

3. 3. The micro LED panel of claim 2, wherein the re-grown layer protruding into the dielectric layer is connected to an adjacent light emitting layer and to an adjacent first type epitaxial layer.

4. 2. The micro LED panel of claim 1, wherein the regrowth layer is grown on the entire sidewalls of the first type epitaxial layer and on the entire sidewalls of the light emitting layer and a portion of the first type epitaxial layer.

5. 2. The micro LED panel of claim 1, wherein the regrowth layer is grown on the portion of the sidewalls of the first type epitaxial layer, the entire sidewalls of the light emitting layer, and the portion of the sidewalls of the second type epitaxial layer.

6. 2. The micro LED panel of claim 1, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

7. 7. The micro LED panel of claim 6, wherein an inclination angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer, and the re-grown layer protruding into the dielectric layer is parallel to a bottom surface of the second type epitaxial layer.

8. 2. The micro LED panel of claim 1, wherein the mesa structure has a diameter of 3 μm or less.

9. 10. The micro LED panel of claim 1, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top surface and the bottom surface of the light emitting layer.

10. 10. The micro LED panel of claim 9, wherein the light emitting layer comprises a plurality of quantum well pairs, and the regrown layers on the sidewalls of the light emitting layer are not parallel to a surface of each of the plurality of quantum well pairs.

11. 10. The micro LED panel of claim 1, wherein the light emitting layer has a linear shape without bending.

12. 2. The micro LED panel of claim 1, wherein the material of the re-grown layer with intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

13. 10. The micro LED panel of claim 1, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

14. 10. The micro LED panel of claim 1, wherein a material of the re-grown layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

15. 10. The micro LED panel of claim 1, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

16. 10. The micro LED panel of claim 1 , wherein the re-grown layer has a thickness less than a thickness of the light emitting layer.

17. 17. The micro LED panel of claim 16, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

18. 10. The micro LED panel of claim 1, wherein the re-grown layer has a resistance greater than a resistance of the light emitting layer.

19. 20. The micro LED panel of claim 18, wherein the re-grown layer is not electrically conductive.

20. 10. The micro LED panel of claim 1, wherein the dielectric layer is formed on a surface of the re-grown layer between adjacent mesa structures.

21. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 13. The micro LED panel of claim 1, wherein

22. 2. The micro LED panel of claim 1, wherein the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

23. 2. A method for manufacturing the micro LED panel of claim 1, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 of forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover a sidewall of the first type epitaxial layer, a sidewall of the light emitting layer, and a part of a sidewall of the second type epitaxial layer; Step 4 depositing a first dielectric layer on the substrate between adjacent mesa structures, the first dielectric layer having an upper portion lower than a lower portion of the light emitting layer; Step 5 of removing the first mask pattern; Step 6: forming a regrowth layer on the entire sidewall of the light emitting layer, on a portion of the sidewall of the second type epitaxial layer, and on at least a portion of the sidewall of the first epitaxial layer by an epitaxial material regrowth process; a step 7 of forming a bottom contact in the regrown layer on the top surface of the epitaxial layer of the first type and forming a second dielectric layer on the regrown layer having an opening exposing a top of the bottom contact; Step 8: forming a lower connection structure in the opening; Step 9: bonding the first type epitaxial layer and the lower connection structure with an IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; forming a top contact and a top conductive layer on the second epitaxial layer; The method includes:

24. 24. The method of claim 23, further comprising, in step 6, forming a second mask pattern covering an upper portion and a portion of the sidewall of the first type epitaxial layer before forming the regrowth layer, forming the regrowth layer on the entire sidewall of the light emitting layer, the at least a portion of the sidewall of the first type epitaxial layer, and the portion of the sidewall of the second type epitaxial layer, and removing the second mask pattern after forming the regrowth layer.

25. 24. The method of claim 23, wherein in step 6, the regrowth layer is formed directly on the entire sidewalls of the light emitting layer, on the entire sidewalls of the first type epitaxial layer, and on a top of the first type epitaxial layer.

26. 24. The method of claim 23, wherein in step 6, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

27. A micro LED panel having an array of micro LED structures, At least one micro LED structure, a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on a portion of the sidewalls of the first-type epitaxial layer, on all of the sidewalls of the second-type epitaxial layer, and on all of the sidewalls of the light-emitting layer; A micro LED panel comprising a micro LED structure comprising:

28. 28. The micro LED panel of claim 27, wherein a dielectric layer is formed between adjacent micro LED structures, and a top end of the re-grown layer protrudes further along a top surface of the dielectric layer.

29. 28. The micro LED panel of claim 27, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

30. 30. The micro LED panel of claim 29, wherein a tilt angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer, and the re-grown layer protruding along the dielectric layer is parallel to the top surface of the dielectric layer.

31. 30. The micro LED panel of claim 28, wherein the re-grown layer protruding along the top of the dielectric layer is connected to an adjacent light emitting layer and to the second type epitaxial layer.

32. 28. The micro LED panel of claim 27, wherein the mesa structure has a diameter of 3 μm or less.

33. 30. The micro LED panel of claim 27, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top surface and the bottom surface of the light emitting layer.

34. 34. The micro LED panel of claim 33, wherein the light emitting layer comprises a plurality of quantum well pairs, and the regrown layers on the sidewalls of the light emitting layer are non-parallel to each of the plurality of quantum well pairs.

35. 28. The micro LED panel of claim 27, wherein the light emitting layer has a straight shape without bends.

36. 28. The micro LED panel of claim 27, wherein the material of the regrown layer with intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

37. 37. The micro LED panel of claim 36, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

38. 28. The micro LED panel of claim 27, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

39. 28. The micro LED panel of claim 27, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

40. 28. The micro LED panel of claim 27, wherein the re-grown layer has a thickness less than a thickness of the light emitting layer.

41. 41. The micro LED panel of claim 40, wherein the re-grown layer has a thickness of 100 nm or less.

42. 28. The micro LED panel of claim 27, wherein the resistance of the regrown layer is greater than the resistance of the light emitting layer.

43. 43. The micro LED panel of claim 42, wherein the re-grown layer is not conductive.

44. 30. The micro LED panel of claim 27, wherein a dielectric layer is further formed on a surface of the re-grown layer.

45. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 45. The micro LED panel of claim 44, wherein

46. 28. The micro LED panel of claim 27, wherein the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

47. 28. A method for manufacturing the micro LED panel of claim 27, comprising: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2 of forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to cover an upper portion and a portion of a sidewall of the first type epitaxial layer; Step 4: forming a regrowth layer on the entire sidewall of the light emitting layer, the entire sidewall of the second type epitaxial layer, and a portion of the sidewall of the first type epitaxial layer by an epitaxial material regrowth process; Step 5: removing the mask pattern; forming a bottom contact on a surface of the first type epitaxial layer and forming a dielectric layer on the regrown layer and on the top and sidewalls of the first type epitaxial layer, the dielectric layer having an opening exposing a top of the bottom contact; Step 7 of forming a sub-connection structure in said opening; Step 8: bonding the first type epitaxial layer and the lower connection structure with an IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 9 of forming a top contact and a top conductive layer on the second epitaxial layer; The method includes:

48. 48. The method of claim 47, wherein in step 4, the regrowth layer is further formed on the substrate between adjacent mesa structures, and the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

49. A micro LED panel comprising an array of micro LED structures, At least one micro LED structure, a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown on the entire sidewall of the first type epitaxial layer, the entire sidewall of the light emitting layer, and the entire sidewall of the second type epitaxial layer; A micro LED panel comprising a micro LED structure comprising:

50. 50. The micro LED panel of claim 49, wherein a dielectric layer is formed between adjacent mesa structures.

51. 51. The micro LED panel of claim 50, wherein a top end of the re-grown layer protrudes further along a top surface of the dielectric layer.

52. 52. The micro LED panel of claim 51 , wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

53. 53. The micro LED panel of claim 52, wherein a tilt angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer, and the re-grown layer protruding along the dielectric layer is parallel to a top surface of the dielectric layer.

54. 52. The micro LED panel of claim 51 , wherein the re-grown layer protruding along the top of the dielectric layer is connected to an adjacent epitaxial layer of a second type.

55. 50. The micro LED panel of claim 49, wherein the regrowth layer is further formed on an entire sidewall of the mesa structure.

56. 50. The micro LED panel of claim 49, wherein the regrowth layer is further formed on a bottom surface of the first type epitaxial layer.

57. 50. The micro LED panel of claim 49, wherein the mesa structure has a diameter of 3 μm or less.

58. 50. The micro LED panel of claim 49, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top surface and the bottom surface of the light emitting layer.

59. 50. The micro LED panel of claim 49, wherein the light emitting layer comprises a plurality of quantum well pairs, and the regrown layers on the sidewalls of the light emitting layer are not parallel to a surface of each of the plurality of quantum well pairs.

60. 50. The micro LED panel of claim 49, wherein the light emitting layer has a straight shape without bends.

61. 50. The micro LED panel of claim 49, wherein the material of the regrown layer with intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

62. 62. The micro LED panel of claim 61 , wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

63. 50. The micro LED panel of claim 49, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

64. 50. The micro LED panel of claim 49, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

65. 50. The micro LED panel of claim 49, wherein the re-grown layer has a thickness less than a thickness of the light emitting layer.

66. 66. The micro LED panel of claim 65, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

67. 50. The micro LED panel of claim 49, wherein the resistance of the regrown layer is greater than the resistance of the light emitting layer.

68. 68. The micro LED panel of claim 67, wherein the re-grown layer is not conductive.

69. The dielectric layer is further formed on the lower part of the mesa structure, and the material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 51. The micro LED panel of claim 50, wherein

70. 51. The micro LED panel of claim 50, wherein a bottom connection structure is formed in the dielectric layer.

71. 50. The micro LED panel of claim 49, wherein the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

72. 50. A method of manufacturing the micro LED panel of claim 49, comprising the steps of: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2: forming a mesa structure by patterning the entire epitaxial structure from top to bottom; Step 3: forming a regrowth layer on the entire sidewall of the light emitting layer, on at least a portion of the sidewall of the first type epitaxial layer, and on at least a portion of the sidewall of the second type epitaxial layer by an epitaxial material regrowth process; Step 4: forming an opening in the regrowth layer over an upper portion of the epitaxial layer of the first type and forming a bottom contact on a surface of the epitaxial layer of the first type in the opening, then forming a dielectric layer over the regrowth layer and forming a second opening in the dielectric layer to expose the bottom contact; Step 5: forming a sub-connection structure in the opening; Step 6: bonding the first type epitaxial layer and the lower connection structure with an IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7 of forming a top contact and a top conductive layer on the second epitaxial layer; The method includes:

73. 73. The method of claim 72, wherein in step 3, the regrowth layer is further formed on the entire sidewall and top of the first type epitaxial layer and on the top of the semiconductor substrate, and in step 4, the opening is further formed in the regrowth layer on the first type epitaxial layer, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

74. 73. The method of claim 72, further comprising, in step 3, forming a mask pattern covering an upper portion and a portion of the sidewall of the first type epitaxial layer before forming the regrown layer, and removing the mask pattern after forming the regrown layer.

75. 73. The method of claim 72, further comprising, in step 3, forming a mask pattern covering a portion of the sidewall of the second type epitaxial layer before forming the regrowth layer, and removing the mask pattern after forming the regrowth layer.

76. 73. The method of claim 72, further comprising, in step 3, forming a first mask pattern covering an upper portion and a portion of the sidewall of the first type epitaxial layer before forming the regrowth layer, forming a second mask pattern covering a portion of the sidewall of the second type epitaxial layer, and removing the first mask pattern and the second mask pattern after forming the regrowth layer.

77. A micro LED panel comprising an array of micro LED structures, At least one micro LED structure, a mesa structure including, from bottom to top, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; a regrowth layer grown over the entire sidewalls of the mesa structures to completely fill between adjacent mesa structures; A micro LED panel comprising a micro LED structure comprising:

78. 78. The micro LED panel of claim 77, wherein a width at the top of the re-grown layer is the same as a width at the top of a space between adjacent mesa structures.

79. 78. The micro LED panel of claim 77, wherein the mesa structure has a diameter of 3 μm or less.

80. 78. The micro LED panel of claim 77, wherein the light emitting layer comprises a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top surface and the bottom surface of the light emitting layer.

81. 78. The micro LED panel of claim 77, wherein the light emitting layer comprises a plurality of quantum well pairs.

82. 78. The micro LED panel of claim 77, wherein the light emitting layer has a straight shape without bends.

83. 78. The micro LED panel of claim 77, wherein the material of the regrown layer with intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

84. 84. The micro LED panel of claim 83, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

85. 78. The micro LED panel of claim 77, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

86. 78. The micro LED panel of claim 77, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

87. 78. The micro LED panel of claim 77, wherein the re-grown layer has a thickness less than a thickness of the light emitting layer.

88. 88. The micro LED panel of claim 87, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

89. 78. The micro LED panel of claim 77, wherein the resistance of the regrown layer is greater than the resistance of the light emitting layer.

90. 90. The micro LED panel of claim 89, wherein the re-grown layer is not conductive.

91. 78. The micro LED panel of claim 77, wherein the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

92. 78. The micro LED panel of claim 77, wherein the regrowth layer is further formed on a bottom of the mesa structure, and a bottom connection structure is formed in the regrowth layer and electrically connected to the first type epitaxial layer.

93. 93. The micro LED panel of claim 92, further comprising a dielectric layer formed on the lower portion of the mesa structure and on the lower portion of the re-grown layer, and a lower connection structure formed in the dielectric layer and electrically connected to the first type epitaxial layer.

94. 78. A method for manufacturing a micro LED panel according to claim 77, comprising the steps of: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure from top to bottom; Step 3: forming a completely filled regrowth ring in the space adjacent the mesa structure and on top of the semiconductor substrate; Step 4: forming an opening in the regrowth layer over the first type epitaxial layer and forming a bottom contact on a surface of the first type epitaxial layer in the opening; Step 5: forming a sub-connection structure in the opening; Step 6: bonding the lower connection structure with an IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7 of forming a top contact and a top conductive layer on the second epitaxial layer; The method includes:

95. 95. The method of claim 94, wherein in step 3, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

96. 94. A method for manufacturing a micro LED panel according to claim 93, comprising the steps of: Step 1: providing an epitaxial structure on a semiconductor substrate, the epitaxial structure including, from top to bottom, a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure from top to bottom; Step 3: forming a completely filled regrowth layer on the entire sidewall of the epitaxial structure and the adjacent spaces of the mesa structure by an epitaxial material regrowth process; Step 4 of forming a dielectric layer over an upper portion of the epitaxial layer of the first type and over an upper portion of the regrown layer; Step 5: forming an opening in the dielectric layer over the first type epitaxial layer and forming a bottom contact on a surface of the first type epitaxial layer in the opening; Step 6: forming a lower connection structure in the opening; Step 7: bonding the lower connection structure with an IC backplane by turning the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 8 of forming a top contact and a top conductive layer on top of the second type epitaxial layer; The method includes:

97. 97. The method of claim 96, wherein in step 3, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

98. A micro LED panel having an array of micro LED structures, At least one micro LED structure, comprising at least a mesa structure including, from top to bottom, a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer; a photonic crystal structure array formed on the mesa structure, the photonic crystal structures having gaps between adjacent photonic crystal structures; a regrowth layer formed in the gap on a sidewall of the photonic crystal structure; A micro LED panel comprising a micro LED structure comprising:

99. 99. The micro LED panel of claim 98, wherein the regrowth layer is formed on the sidewalls and under the gaps.

100. 99. The micro LED panel of claim 98, wherein the regrowth layer is grown on at least a portion of the sidewall of the mesa structure.

101. 101. The micro LED panel of claim 100, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

102. 102. The micro LED panel of claim 101, wherein a slope angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to the extension direction of the light emitting layer.

103. 99. The micro LED panel of claim 98, wherein the mesa structure has a diameter of 3 μm or less.

104. 100. The micro LED panel of claim 98, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the re-grown layer is further grown on the edge surfaces of the light emitting layer.

105. 105. The micro LED panel of claim 104, wherein the light emitting layer comprises a plurality of quantum well pairs, and the re-grown layers on the sidewalls of the light emitting layer are not parallel to a surface of each of the plurality of quantum well pairs.

106. 99. The micro LED panel of claim 98, wherein the light emitting layer has a straight shape without bends.

107. 99. The micro LED panel of claim 98, wherein the regrowth layer is further grown on the sidewalls of the second type epitaxial layer and at least a portion of the sidewalls of the light emitting layer.

108. 99. The micro LED panel of claim 98, wherein the regrowth layer is further grown over the entire sidewall of the mesa structure.

109. 99. The micro LED panel of claim 98, wherein the material of the regrown layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

110. 110. The micro LED panel of claim 109, wherein the material of the re-grown layer is selected from at least one of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

111. 99. The micro LED panel of claim 98, wherein the material of the regrowth layer is single crystalline, the material of the first semiconductor layer is single crystalline, and the material of the second semiconductor layer is single crystalline.

112. 99. The micro LED panel of claim 98, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

113. 99. The micro LED panel of claim 98, wherein the re-grown layer has a thickness less than a thickness of the light emitting layer.

114. 114. The micro LED panel of claim 113, wherein the thickness of the re-grown layer is 100 nm or less.

115. 99. The micro LED panel of claim 98, wherein a resistance of the re-grown layer is greater than a resistance of the light emitting layer.

116. 116. The micro LED panel of claim 115, wherein the re-grown layer is not conductive.

117. 99. The micro LED panel of claim 98, wherein a dielectric layer is further formed on a surface of the re-grown layer.

118. 118. The micro LED panel of claim 117, wherein the re-grown layer is transparent and the dielectric layer is transparent.

119. 99. The micro LED panel of claim 98, wherein a top contact is formed on and electrically connected to a top of the mesa structure.

120. 120. The micro LED panel of claim 119, wherein the photonic crystal structure is not formed under the top contact.

121. 99. The micro LED panel of claim 98, wherein a space is between adjacent said micro LED structures.

122. 122. The micro LED panel of claim 121 , wherein the re-grown layer fills the spaces between the adjacent micro LED structures.

123. 122. The micro LED panel of claim 121 , wherein another dielectric layer fills the space between the adjacent micro LED structures.

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