Micro LED panel with re-grown layer and method for manufacturing same

Abstract

A micro LED panel with a micro LED array and a system and method for manufacturing the micro LED panel are provided. The micro LED array includes at least one micro LED structure. The micro LED structure includes at least a mesa structure and a re-growth layer (04). The re-growth layer (04) is grown on at least a portion of the sidewalls of the first type of epitaxial layer (01) and on the entire sidewall of the light emitting layer (03), thereby reducing non-radiative recombination on the sidewalls of the mesa structure and improving the light emitting efficiency.

Description

[Technical field]

[0001] Technical Field The present disclosure relates generally to light emitting diode (LED) technology, and more particularly to micro LED panels and methods for manufacturing micro LED structures. [Background technology]

[0002] background

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in large stationary screens, such as liquid crystal display televisions (LCD TVs) and organic light emitting diode televisions (OLED TVs), as well as in portable electronic devices, such as laptop personal computers, smartphones, tablets, and wearable electronic devices.

[0003]

[0003] Inorganic micro light-emitting diodes are gaining importance as they are used in a variety of applications, including self-luminous microdisplays, visible light communication, and optogenetics. Micro LEDs exhibit higher power performance than conventional LEDs due to better strain relief, improved light extraction efficiency, and uniform current spreading. Micro LEDs also exhibit improved thermal effects, and operate at higher current densities, faster response speeds, wider operating temperature ranges, higher resolutions, color gamuts, and contrasts, and lower power consumption compared to conventional LEDs.

[0004]

[0004] To achieve higher pixel density, the size of micro-LEDs is scaled down to less than 200 nm. However, the efficiency and carrier lifetime of devices based on micro-LED arrays degrades significantly with the reduction in size of micro-LEDs due to surface recombination and poor p-type conduction caused by top-down etching. The performance of micro-LEDs also suffers greatly from the quantum confined Stark effect, especially due to strain-induced polarization fields, which causes unstable operation and significant variation in emission wavelength with increasing current. In addition, as the diameter of micro-LEDs decreases, inductively coupled plasma (ICP) etching creates a large number of surface states and defects on the surface of the micro-LED structure, which increases non-radiative recombination at the surface of the micro-LED structure.

[0005]

[0005] In addition, the light emitted by the conventional micro LED structure is mainly dispersed in random directions, exhibiting poor directional light emission and reducing the light intensity along the vertical direction. In order to realize the directional light emission of the micro LED structure, an additional reflective structure is configured around the mesa and at the bottom of the mesa of the micro LED structure to reflect the emitted light in the same direction, which causes a complex manufacturing process and increases the cost of the micro LED.

[0006]

[0006] Furthermore, in micro-LED array-based devices, one micro-LED has traditionally been used as one pixel, as in monolithic micro-LED array panels, but the small diameter micro-LED structures exhibit low external quantum efficiency (EQE), reducing the light efficiency of each pixel.

[0007]

[0007] The above contents are only used to assist in understanding the technical solutions of the present application, and are not acknowledged as being prior art. Summary of the Invention [Problem to be solved by the invention]

[0008] overview

[0008] There is a need for improved display designs that help to ameliorate and address the shortcomings of conventional display systems such as those discussed above. In particular, there is a need for display panels that have improved efficiency and better images. [Means for solving the problem]

[0009]

[0009] To overcome the above drawbacks, the present invention provides a micro LED panel to improve luminous efficiency, avoid crosstalk, minimize surface carrier loss, and optimize the sidewall area of ​​the quantum well.

[0010]

[0010] In order to achieve the above objectives, some example embodiments of the present disclosure provide a micro LED panel having a micro LED array, which includes: at least one micro LED structure, wherein the micro LED structure has at least a mesa structure, wherein the mesa structure has, from bottom to top, a first type of epitaxial layer and a light emitting layer; A second type of epitaxial layer is formed continuously on the top of the light emitting layer and is formed continuously on the entire area of ​​the micro LED panel; a regrowth layer grown on at least a portion of the sidewalls of the first type epitaxial layer and on the entire sidewall of the light emitting layer; has.

[0011]

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the upper end of the re-grown layer extrudes further along the upper surface of the dielectric layer, and a second type of epitaxial layer is formed on top of the light emitting layer and on top of the re-grown layer.

[0012]

[0012] In some example embodiments or any combination of example embodiments of the micro LED panel, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0013]

[0013] In some example embodiments or any combination of example embodiments of the micro LED panel, the inclination angle of the re-grown layer on the sidewall of the light-emitting layer is between 30 degrees and 90 degrees relative to the extension direction of the light-emitting layer, and the re-grown layer extruded along the dielectric layer is parallel to the upper surface of the dielectric layer.

[0014]

[0014] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer extruded along the top of the dielectric layer connects to the adjacent light emitting layer and the first type of epitaxial layer.

[0015]

[0015] In some example embodiments or any combination of example embodiments of the micro LED panel, a re-growth layer is further formed on the entire sidewall of the first type epitaxial layer and the light emitting layer.

[0016]

[0016] In some example embodiments or any combination of example embodiments of the micro LED panel, a re-growth layer is further formed on the bottom surface of the first type epitaxial layer.

[0017]

[0017] In some example embodiments or any combination of example embodiments of the micro LED panel, the diameter of the mesa structure is 3 μm or less.

[0018]

[0018] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer has a top surface, an edge surface, and a bottom surface, and the re-growth layer is grown on the edge surface of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

[0019]

[0019] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer has multiple pairs of quantum wells, and the regrown layers on the sidewalls of the light emitting layer are not parallel to each of the multiple pairs of quantum wells.

[0020]

[0020] In some example embodiments or any combination of example embodiments of the micro LED panel, the light emitting layer has a linear shape without any bends.

[0021]

[0021] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the regrown layer having intrinsic doping ions is identical to the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional external doping ions.

[0022]

[0022] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0023]

[0023] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0024]

[0024] In some example embodiments or any combination of example embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0025]

[0025] In some example embodiments or any combination of example embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0026]

[0026] In some example embodiments of the micro LED panel or any combination of example embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0027]

[0027] In some example embodiments or any combination of example embodiments of the micro LED panel, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0028]

[0028] In some example embodiments or combinations of example embodiments of the micro LED panel, the re-grown layer is not electrically conductive.

[0029]

[0029] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0030]

[0030] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0031] Some example embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer from top to bottom; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3, forming a regrowth layer on the sidewalls of the light emitting layer and on at least a portion of the sidewalls of the first type epitaxial layer by an epitaxial material regrowth process; Step 4, forming a dielectric layer on the regrowth layer, forming an opening in the dielectric layer on the first type epitaxial layer, and forming a bottom contact in the opening on a surface of the first type epitaxial layer; Step 5: forming a bottom connection structure in the opening; Step 6: bonding the first type epitaxial layer and the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; has.

[0032]

[0032] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, a re-growth layer is further formed on the entire sidewall and top of the first type epitaxial layer, and in step 4, an opening is further formed in the re-growth layer on the first type epitaxial layer, the temperature in the re-growth process is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds.

[0033]

[0033] In some example embodiments or any combination of example embodiments, the method for manufacturing a micro LED panel further includes, in step 3, forming a mask pattern covering a top and a portion of a sidewall of the first type epitaxial layer before forming the re-growth layer, and removing the mask pattern after forming the re-growth layer.

[0034] Some example embodiments of the present disclosure provide a micro LED panel, which includes: a micro LED structure array having at least two micro LED structures, wherein each of the micro LED structures comprises: A mesa structure is provided, in which the mesa structure is, from the bottom upward, a first type of epitaxial layer and a light emitting layer; a second type of epitaxial layer formed successively on the top of the light emitting layer and on the top of the regrown layer, the second type of epitaxial layer being formed successively on the entire area of ​​the micro LED panel; a regrowth layer grown on the entire sidewall of the first type epitaxial layer and the entire sidewall of the light emitting layer, the regrowth layer being fully filled between adjacent mesa structures; has.

[0035]

[0035] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the top width of the regrown layer is the same as the top width of the space between adjacent light emitting layers of adjacent micro LED structures.

[0036]

[0036] In some example embodiments or any combination of example embodiments of the micro LED panel, the diameter of the mesa structure is 3 μm or less.

[0037]

[0037] In some example embodiments or any combination of example embodiments of the micro LED panel, the light emitting layer has a top surface, an edge surface, and a bottom surface, and the re-growth layer is grown on the edge surface of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

[0038]

[0038] In some example embodiments or any combination of example embodiments of the micro LED panel, the light emitting layer has multiple pairs of quantum wells.

[0039]

[0039] In some example embodiments or any combination of example embodiments of the micro LED panel, the light emitting layer has a linear shape without any bends.

[0040]

[0040] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the regrown layer having intrinsic doping ions is identical to the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional external doping ions.

[0041]

[0041] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0042]

[0042] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0043]

[0043] In some example embodiments or any combination of example embodiments of the micro LED panel, the band gap of the regrown layer is greater than the band gap of the light emitting layer.

[0044]

[0044] In some embodiments or any combination of the exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0045]

[0045] In some example embodiments of the micro LED panel or any combination of example embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0046]

[0046] In some example embodiments or any combination of example embodiments of the micro LED panel, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0047]

[0047] In some example embodiments of the micro LED panel or any combination of example embodiments, the re-grown layer is not electrically conductive.

[0048]

[0048] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0049]

[0049] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a bottom connection structure is formed within the lower re-grown layer and electrically connected to the first type of epitaxial layer.

[0050] Some example embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer from top to bottom; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer, and forming a bottom contact at the top of the mesa structure; Step 3: forming a fully filled regrowth layer in the space of the adjacent mesa structure and on the entire sidewall of the light emitting layer and on the entire sidewall of the first type epitaxial layer by an epitaxial material regrowth process; Step 4, forming an opening in the regrowth layer on the first type epitaxial layer; Step 5: forming a bottom connection structure in the opening; Step 6: bonding the bottom connection structure with the IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; has.

[0051]

[0051] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0052] Some example embodiments of the present disclosure provide a micro LED panel, which includes: a micro LED structure array having at least one micro LED structure, wherein the micro LED structure comprises: A mesa structure, in which the mesa structure is, from bottom to top, a first type of epitaxial layer and a light emitting layer; A second type of epitaxial layer is formed continuously on the top of the light emitting layer and the re-grown layer, and is formed continuously on the entire area of ​​the micro LED panel. a regrowth layer grown on a portion of the sidewalls of the first type epitaxial layer and on the entire sidewall of the light emitting layer, filling between adjacent mesa structures; has.

[0053]

[0053] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top width of the regrown layer is the same as the top space width between adjacent light emitting layers.

[0054]

[0054] In some exemplary embodiments or any combination of exemplary embodiments, the micro LED panel further includes a dielectric layer formed on the bottom of the regrown layer.

[0055]

[0055] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0056]

[0056] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a bottom connection structure is formed in the lower dielectric layer and electrically connected to the first type of epitaxial layer.

[0057]

[0057] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is 3 μm or less.

[0058]

[0058] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer grows on the edge surfaces of the light emitting layer and does not grow on the top and bottom surfaces of the light emitting layer.

[0059]

[0059] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes multiple pairs of quantum wells.

[0060]

[0060] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer has a linear shape without any bends.

[0061]

[0061] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional external doping ions.

[0062]

[0062] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0063]

[0063] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0064]

[0064] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0065]

[0065] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0066]

[0066] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0067]

[0067] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0068]

[0068] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the regrown layer is not conductive.

[0069]

[0069] In some example embodiments or any combination of example embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0070] Some example embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer from top to bottom; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3, forming a regrowth layer on the entire sidewall of the light emitting layer and on a portion of the sidewall of the first type epitaxial layer by an epitaxial material regrowth process; Step 4, forming a dielectric layer on the regrowth layer, forming an opening in the dielectric layer on the first type epitaxial layer, and forming a bottom contact in the opening on a surface of the first type epitaxial layer; Step 5: forming a bottom connection structure in the opening; Step 6: bonding the bottom connection structure with the IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; has.

[0071]

[0071] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0072] Some example embodiments of the present disclosure provide a micro LED panel, which includes: a micro LED structure array having at least one micro LED structure, wherein the micro LED structure comprises: The mesa structure has, from bottom to top, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer, and a regrown layer grown on at least a portion of the sidewalls of the first type of epitaxial layer and on the entire sidewall of the light emitting layer.

[0073]

[0073] In some example embodiments or any combination of example embodiments of the micro LED panel, a dielectric layer is formed between adjacent mesa structures and the upper end of the regrown layer extrudes further into the dielectric layer.

[0074]

[0074] In some example embodiments or any combination of example embodiments of the micro LED panel, the regrown layer extruded into the dielectric layer is connected to an adjacent light emitting layer and an adjacent first type epitaxial layer.

[0075]

[0075] In some example embodiments or any combination of example embodiments of the micro LED panel, the re-growth layer is grown on the entire sidewall of the light emitting layer and the entire sidewall of the first type of epitaxial layer.

[0076]

[0076] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0077]

[0077] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the inclination angle of the regrown layer on the sidewall of the light emitting layer is 30 degrees to 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer extruded into the dielectric layer is parallel to the bottom surface of the second type of epitaxial layer.

[0078]

[0078] In some example embodiments or any combination of example embodiments of the micro LED panel, the diameter of the mesa structure is 3 μm or less.

[0079]

[0079] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer grows on the edge surfaces of the light emitting layer and does not grow on the top and bottom surfaces of the light emitting layer.

[0080]

[0080] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer includes multiple pairs of quantum wells and the regrown layers on the sidewalls of the light emitting layer are not parallel to each of the multiple pairs of quantum wells.

[0081]

[0081] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light emitting layer has a linear shape without any bends.

[0082]

[0082] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional external doping ions.

[0083]

[0083] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0084]

[0084] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0085]

[0085] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0086]

[0086] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0087]

[0087] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0088]

[0088] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0089]

[0089] In some exemplary embodiments of the micro LED panel or any combination of exemplary embodiments, the regrown layer is not conductive.

[0090]

[0090] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is formed between adjacent mesa structures and on the surface of the regrown layer.

[0091]

[0091] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0092]

[0092] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0093] Some example embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: A first step is to provide a semiconductor substrate having an epitaxial structure, the epitaxial structure including a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer from top to bottom; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover a sidewall of the first type epitaxial layer and a sidewall of the light emitting layer; Step 4. Depositing a first dielectric layer on the substrate between adjacent mesa structures, where an upper portion of the first dielectric layer is aligned with a lower portion of the light emitting layer; Step 5: removing the first mask pattern; Step 6, forming a regrowth layer on the entire sidewall of the light emitting layer and on at least a portion of the sidewall of the first epitaxial layer by an epitaxial material regrowth process; Step 7, forming a second dielectric layer on the regrown layer and forming an opening on the first type epitaxial layer and filling the bottom contact in the opening; Step 8: forming a bottom connection structure in the opening; Step 9: bonding the first type epitaxial layer and the bottom connection structure with the IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 10. Forming a top contact and a top conductive layer on the second epitaxial layer; has.

[0094]

[0094] In some example embodiments or any combination of example embodiments, the method for manufacturing a micro LED panel further includes, in step 6, forming a second mask pattern covering an upper portion and a portion of a sidewall of the first type of epitaxial layer before forming the regrowth layer, wherein the regrowth layer is formed on the entire sidewall of the light emitting layer and a portion of the sidewall of the first type of epitaxial layer, and removing the second mask pattern after forming the regrowth layer.

[0095]

[0095] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, a re-growth layer is formed directly on the entire sidewall of the light-emitting layer, on the entire sidewall of the first type epitaxial layer, and on top of the first type epitaxial layer.

[0096]

[0096] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0097] Some example embodiments of the present disclosure provide a method for manufacturing a micro LED panel, comprising: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer from top to bottom; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover the sidewall of the second type epitaxial layer, where the top of the first mask pattern is not higher than the bottom of the light emitting layer; Step 4, forming a regrowth layer on the sidewalls of the light emitting layer and on at least a portion of the sidewalls of the first epitaxial layer by an epitaxial material regrowth process; Step 5, forming a first dielectric layer on the regrown layer, forming an opening on the first type epitaxial layer, and filling the bottom contact in the opening; Step 8: forming a bottom connection structure in the opening; Step 9: bonding the first type epitaxial layer and the bottom connection structure with the IC backplane by flipping the semiconductor substrate upside down, and removing the semiconductor substrate; Step 10, forming a second dielectric layer on the regrowth layer between adjacent mesa structures; Step 11. forming a top contact and a top conductive layer on the second epitaxial layer; has.

[0098]

[0098] In some example embodiments or any combination of example embodiments, the method for manufacturing a micro LED panel further includes, in step 4, forming a second mask pattern covering an upper portion and a portion of a sidewall of the first type of epitaxial layer before forming the regrowth layer, wherein the regrowth layer is formed on the entire sidewall of the light emitting layer and a portion of the sidewall of the first type of epitaxial layer, and removing the mask pattern after forming the regrowth layer.

[0099]

[0099] In some example embodiments or any combination of example embodiments of the method for manufacturing a micro LED panel, the material of the first mask pattern is different from the material of the second mask pattern.

[0100]

[0100] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, a regrowth layer is formed directly on the entire sidewall of the light emitting layer, on the entire sidewall of the first type epitaxial layer, and on top of the first type epitaxial layer.

[0101]

[0101] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0102]

[0102] The micro LED panel provided by the present disclosure can avoid non-radiative recombination on the sidewall of the micro LED structure. Moreover, compared with the conventional micro LED, the micro LED structure of the present disclosure has a highly directional emission without other reflective structures, thereby simplifying the micro LED structure and reducing the cost. Furthermore, the present disclosure can also suppress non-radiative recombination on the surface of the micro LED structure, thereby improving the image quality and enhancing the EQE of the pixel.

[0103]

[0103] It should be noted that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described herein are not all-inclusive, and many additional features and advantages will be apparent to those skilled in the art, especially in light of the drawings, the present specification, and the claims. Furthermore, it should be noted that the language used in this specification is primarily selected for readability and for explanatory purposes, and may not be selected to define or limit the content of the present invention.

[0104] BRIEF DESCRIPTION OF THE DRAWINGS

[0104] In order that the present disclosure may be more fully understood, a more particular description may be had by reference to the features of the various embodiments, some of which are illustrated in the accompanying drawings, which are merely illustrative of the relevant features of the present disclosure and therefore should not be considered limiting, as the present description may admit of other useful features.

[0105]

[0105] For convenience, "up" is used to mean away from the substrate of the light-emitting structure as shown, and "down" means toward the substrate, and other directional terms such as top, bottom, above, below, under, below, etc. are to be interpreted accordingly. [Brief description of the drawings]

[0106] [Figure 1]

[0106] A cross-sectional view of a micro LED panel according to some embodiments (e.g., embodiment 1) of the present disclosure. [Diagram 2]

[0107] 2 illustrates steps of a method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (e.g., embodiment 1) of the present disclosure. [Diagram 3]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 4]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Diagram 5]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 6]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 7]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 8]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 9]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 10]

[0107] A method for manufacturing the micro LED panel of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure is shown. [Figure 11]

[0108] FIG. 2 is a cross-sectional structural diagram of a micro LED structure according to some embodiments of the present invention (e.g., embodiment 2). [Figure 12]

[0109] 12 illustrates steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (e.g., embodiment 2) of the present disclosure. [Figure 13]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 14]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 15]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 16]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 17]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 18]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 19]

[0109] Steps of a method for manufacturing the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure are shown. [Figure 20]

[0110] FIG. 2 is a cross-sectional structural diagram of a micro LED structure according to some embodiments of the present invention (e.g., embodiment 3). [Figure 21]

[0111] 21 illustrates steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (e.g., embodiment 3) of the present disclosure. [Figure 22]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Figure 23]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Figure 24]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Diagram 25]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Figure 26]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Figure 27]

[0111] Steps of a method for manufacturing the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure are shown. [Figure 28]

[0112] FIG. 1 is a cross-sectional view of a micro LED structure according to some embodiments of the present invention (e.g., embodiment 4). [Figure 29]

[0113] 29 illustrates method steps for manufacturing the micro LED structure of FIG. 28. [Diagram 30]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 31]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 32]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 33]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 34]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 35]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 36]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 37]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 38]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 39]

[0113] Steps of a method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 40]

[0114] 11 is a cross-sectional structure of another alternative step 6 according to embodiment 4 of the present invention. [Diagram 41]

[0115] FIG. 13 is a cross-sectional structural diagram of another micro LED structure according to some embodiments of the present invention (e.g., Alternative Embodiment 4). [Diagram 42]

[0116] 29 illustrates steps of another alternative method for manufacturing the micro LED structure of FIG. [Diagram 43]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 44]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Diagram 45]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 46]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 47]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 48]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 49]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. [Figure 50]

[0116] Steps of another alternative method for manufacturing the micro LED structure of Figure 28 are shown. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0107]

[0117] According to common practice, the various features illustrated may not be drawn to scale. Accordingly, dimensions of various features may be arbitrarily increased or decreased for clarity. In addition, some of the drawings may not depict all of the components of a given system, method, or apparatus. Finally, like reference numerals are used throughout the specification and drawings to denote like features.

[0108] Detailed Description

[0118] Numerous details are described herein to provide a thorough understanding of the examples illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the claims are limited only by the features and aspects specifically recited in the claims. Moreover, well-known processes, components, and materials have not been described in exhaustive detail so as not to unnecessarily obscure relevant aspects of the implementations described herein.

[0109]

[0119] In order to solve the problems in the related art as discussed above, in some embodiments, a micro LED panel including a plurality of micro LED structures is disclosed in the present disclosure. The micro LED panel has a dimension of 1 cm or less. The micro LED structure is formed by an array of micro LED panels, and the micro LED panel has a diameter of 720 mm. * 480, 640 * 480, 1920 * 1080, 1280 * 720, 2k, or 4k etc. The diameter of the micro LED structure is at the nanometer level, such as 20nm to 100nm.

[0110]

[0120] FIG. 1 is a cross-sectional view of a micro LED structure according to some embodiments of the present invention. Referring to FIG. 1, the micro LED structure is formed by, from the bottom up, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The first type and the second type are of different conductivity types, for example, the first type is P-type and the second type is N-type. In another example, the first type is N-type while the second type is P-type. In some embodiments, the material of the first type of epitaxial layer 01 is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof. and the material of the second type of epitaxial layer 03 can be one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof.

[0111]

[0121] In some embodiments, the light emitting layer 03 is formed by multiple pairs of quantum well layers. The material of the quantum well layers can be one of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, etc. In addition, the thickness of the first type of epitaxial layer 01 is greater than the thickness of the second type of epitaxial layer 02, and the thickness of the light emitting layer 03 is less than the thickness of the first type of epitaxial layer 01. Preferably, the thickness of the first type of epitaxial layer 01 is 700 nm to 2 μm, and the thickness of the second type of epitaxial layer 02 is 100 nm to 200 nm. Preferably, the thickness of a single quantum well layer is 30 nm or less. In some examples, the light emitting layer 03 includes three or less pairs of quantum well layers.

[0112]

[0122] In some embodiments, the first type epitaxial layer 01 may have multiple stacked first type semiconductor underlayers and the second type epitaxial layer 02 may have multiple stacked second type semiconductor underlayers. For example, to prevent damage to the quantum well layer, the top layer of the first type epitaxial underlayer is a P-cap layer connected to the bottom of the light emitting layer 03 and the bottom layer of the second type epitaxial underlayer is an N-cap layer connected to the top of the light emitting layer 03.

[0113]

[0123] Furthermore, the first type epitaxial layer 01 includes one or more reflective mirror layers 011 (not shown in FIG. 1). The reflective mirror layer 011 can be formed on the bottom surface of the first type epitaxial layer 01 or can be formed inside the first type epitaxial layer 01. The material of the reflective mirror layer is a combination of a dielectric material and a metallic material. Furthermore, the dielectric material is SiO2 or SiNx, where x is a positive integer, and preferably the metallic material is Au or Ag. In some embodiments, the multiple reflective mirror layers 011 are formed horizontally at different horizontal levels one by one in the first type epitaxial layer 01, thereby dividing the first type epitaxial layer 01 into multiple layers.

[0114]

[0124] In some embodiments, a top contact 09 is formed on the top surface of the second type of epitaxial layer 02. The conductivity type of the top contact 09 is the same as the conductivity type of the second type of epitaxial layer 02, such as the second type being n-type and the top contact 09 being an n-type top contact, or the second type being p-type and the top contact 09 being a p-type top contact. In some embodiments, the top contact 09 is made of a metal or metal alloy, such as AuGe, AuGeNi, etc. The top contact 09 is used to form an ohmic contact between the top conductive layer 08 and the second type of epitaxial layer 02 to optimize the electrical properties of the micro-LED. The diameter of the top contact 09 is about 20 nm to 50 nm, and the thickness of the top contact 09 is about 10 nm to 20 nm. In some embodiments, the top conductive layer 08 is transparent and conductive, such as indium tin oxide (ITO), fluorine doped tin oxide (FTO), etc.

[0115]

[0125] In some embodiments, the bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 01. The conductivity type of the bottom contact 06 is the same as the conductivity type of the first type epitaxial layer 01, such as the first type epitaxial layer 01 being P-type and the bottom contact 06 also being P-type. Furthermore, since the LED mesa structure consisting of or including the first type epitaxial layer 01 and the light emitting layer 03 emits light upwards or downwards, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, so that the top contact 09 is also as a point on the top surface of the second type epitaxial layer 02. For example, the width of the top contact 09 is less than 1 / 5, 1 / 6, 1 / 10, or 1 / 20 of the width of the second type epitaxial layer 02. In some embodiments, the diameter of the bottom contact 06 may be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is used to connect with a bottom electrode such as a conductor pad in an IC backplane. Furthermore, the diameter of the bottom connection structure 07 is 20 nm to 1 μm. Preferably, the diameter of the bottom connection structure 07 is 800 nm to 1 μm. Furthermore, the center of the bottom contact 06 is vertically aligned with the center of the top contact 09. In some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is a transparent conductive material such as ITO or FTO. Additionally, in some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is not transparent. The material of the bottom contact 06 and the bottom connection structure 07 can be a conductive metal. Preferably, the material of the bottom contact 06 can be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 can be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0116]

[0126] 1, in some embodiments, the center of the bottom contact 06 is vertically aligned with the center of the first type of epitaxial layer 01. However, in other embodiments, the center of the bottom contact 06 is not vertically aligned with the center of the first type of epitaxial layer 01.

[0117]

[0127] In some embodiments, to avoid surface carrier losses and non-radiative recombination at the sidewalls of the mesa structure, a re-growth layer 04 is formed on the sidewalls of the light emitting layer 03 by a regrowth process on the sidewalls of the first type of epitaxial layer 01 and even on the sidewalls of the second type of epitaxial layer 02. For example, the re-growth layer can be grown on a part of the sidewall of the light emitting layer 03 or on the entire sidewall of the light emitting layer. "Entirely" means a substantial part or the entirety. Furthermore, the re-growth layer 04 can be further formed on a part of the first type of epitaxial layer 01 or on the entire sidewall of the first type of epitaxial layer 01 and / or on a part of the second type of epitaxial layer 02 or on the entire sidewall of the second type of epitaxial layer 02.

[0118]

[0128] As shown in FIG. 1, the regrown layer 04 on the sidewall of the light-emitting layer 03 is not parallel to the horizontal direction in which the light-emitting layer 03 extends. Furthermore, the light-emitting layer 03 includes a top surface, an edge surface, and a bottom surface, and the regrown layer 04 grows only on the edge surface of the light-emitting layer 03, but not on the top and bottom surfaces of the light-emitting layer 03. Preferably, the inclination angle of the regrown layer 04 on the sidewall of the light-emitting layer is 30° to 90° with respect to the horizontal direction of the light-emitting layer 03. That is, the regrown layer 04 grows on the edge surface of the light-emitting layer 03, but not on the top and bottom of the light-emitting layer 03. In addition, the light-emitting layer 03 includes multiple pairs of quantum wells. The regrown layer 04 is not parallel to each surface of the multiple pairs of quantum wells. Here, the light-emitting layer 03 has a straight shape without any bend. Preferably, the diameter of the mesa structure is 3 μm or less.

[0119]

[0129] Here, the material of the regrown layer 04 with intrinsic doping ions is the same as the material of the first type of epitaxial layer 01 and / or the material of the second type of epitaxial layer 02, but without intentional extrinsic doping ions. For example, if the materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02 are the same, but the intentional ion doping levels of the materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02 are different, the material of the regrown layer 04 may be the same as the underlying materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02, but without intentional extrinsic doping ions. In another example, if the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are not the same and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regrown layer 04 may be the same as the material of the first type epitaxial layer 01 or the second type epitaxial layer 02 but without the intentional extrinsic doping ions. The light emitting layer is the active region of the PN junction formed by the first type epitaxial layer 01 and the second type epitaxial layer 02, and can be considered as being composed of two materials, the first type epitaxial layer 01 and the second type epitaxial layer 02. In some embodiments, the portion of the material of the regrown layer overlying the first type of epitaxial layer 01 is the same as the underlying first type of epitaxial layer 01, but without the extrinsic intentional doping of the first type of epitaxial layer 01, and the portion of the material of the regrown layer overlying the second type of epitaxial layer 02 is the same as the underlying second type of epitaxial layer 02, but without the extrinsic intentional doping of the second type of epitaxial layer 02. In some embodiments, the regrown layer 04 may have some intrinsic doping level or no doping level. In some embodiments, the material growth parameters such as ambient / gas pressure, power, and materials for the re-growth process are the same or similar to those of the first type of epitaxial layer 01 and / or the second type of epitaxial layer 02.The material of the regrown layer 04 must be lattice-matched to the light emitting layer 03, the first type of epitaxial layer 01, and / or the second type of epitaxial layer 02. Preferably, the material of the regrown layer 04 is monocrystalline, the material of the first epitaxial layer 01 is monocrystalline, and the material of the second epitaxial layer 02 is monocrystalline. Furthermore, the material of the regrown layer 04 is selected from one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, or any combination thereof. In another embodiment, the material of the regrown layer 04 does not have intentional doping ions and is not the same as the material of the first type of epitaxial layer or the material of the second type of epitaxial layer 02 .

[0120]

[0130] The resistance of the regrown layer 04 is higher than the resistance of the light emitting layer 03, and the regrown layer 04 is not conductive, thereby ensuring the normal operation of the micro LED structure and preventing transport spreading outside the light emitting layer 03. Preferably, the band gap of the regrown layer 04 is larger than the band gap of the light emitting layer 03. Furthermore, the thickness of the regrown layer 04 is less than the thickness of the light emitting layer 03, and preferably the thickness of the regrown layer 04 is less than 10 nm or 100 nm. In another embodiment, the thickness of the regrown layer 04 is equal to or greater than the thickness of the light emitting layer 03.

[0121]

[0131] The details of the micro LED panel and the manufacturing method of the micro LED panel will be described below with reference to the drawings.

[0122]

[0132] EMBODIMENT 1

[0133] To solve the problems in the prior art, an embodiment of the present invention provides a micro LED panel.

[0123]

[0134] The micro LED panel includes an array of micro LED structures. Referring to FIG. 1, the micro LED structures in the micro LED panel include mesa structures including 01 and 03, a re-grown layer 04, a top contact 09, a top conductive layer 08, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, and a dielectric layer 05 between adjacent mesa structures.

[0124]

[0135] The mesa structure here comprises a first type of epitaxial layer 01 and a light emitting layer 03 from bottom to top, but does not comprise a second type of epitaxial layer 02. The second type of epitaxial layer 02 is formed continuously on top of the entire micro LED panel. Moreover, the second type of epitaxial layer 02 is formed continuously on top of the light emitting layer 03 and on top of the regrown layer 04.

[0125]

[0136] The regrown layer 04 is grown on the entire sidewall of the light emitting layer 03 and on the entire sidewall of the first type epitaxial layer 01. Furthermore, the regrown layer 04 is further formed on the bottom surface of the first type epitaxial layer 01. In some embodiments, the regrown layer 04 is grown on a portion of the first type epitaxial layer 01 and is not formed on the bottom surface of the first type semiconductor layer 01. Furthermore, the regrown layer 04 is very thin, not more than 10 nm, such as 5 nm, and therefore the regrown layer 04 is transparent in some embodiments.

[0126]

[0137] A dielectric layer 05 is formed between adjacent mesa structures. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In addition, the material of the dielectric layer 05 is transparent in some embodiments. The top end of the regrown layer 04 further extrudes along the top surface of the dielectric layer 05. The second type epitaxial layer 02 is formed on top of the light emitting layer 03 and on top of the regrown layer 04. The part of the regrown layer 04 extruded along and on the dielectric layer 05 is parallel to the top surface of the dielectric layer 05. Furthermore, the regrown layer 04 extruded along the top of the dielectric layer 05 is connected to the adjacent light emitting layer 03 and the first type epitaxial layer 01. In addition, a bottom contact 06 and a bottom connection structure 07 are formed in the dielectric layer 05 at the bottom of the first type epitaxial layer 01. A top contact 09 and a top conductive layer 08 are formed on top of the second type of epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel of this embodiment. In other embodiments, the top conductive layer 08 is formed on the top contact and a portion of the top surface of the second type of epitaxial layer 02.

[0127]

[0138] In some embodiments, the method for manufacturing the above-mentioned micro LED panel in this embodiment 1 includes the following steps.

[0128]

[0139] 2-15 show steps of a method for fabricating the micro LED structure of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure.

[0129]

[0140] Referring to FIG. 2, step 1 includes providing a semiconductor substrate 00′ having an epitaxial structure, which includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02.

[0130]

[0141] Here, the epitaxial structure includes a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02 from top to bottom. The material of the semiconductor substrate 00' can be GaN, GaAs, etc. The epitaxial structure is grown on the substrate 00'.

[0131]

[0142] Referring to FIG. 3, step 2 involves patterning the first type epitaxial layer 01 and the light emitting layer 03 to form a mesa structure.

[0132]

[0143] Here, the first type epitaxial layer 01 and the light emitting layer 03 are etched from top to bottom by a conventional plasma etching process.

[0133]

[0144] Referring to FIG. 4, step 3 involves forming a regrowth layer 04 on the sidewalls of the light emitting layer 03 and on at least a portion of the sidewalls of the first type epitaxial layer 01 by an epitaxial material regrowth process.

[0134]

[0145] Here, the re-growth layer 04 is grown on the sidewalls of the light emitting layer 03 of FIG. 4, on the sidewalls and top of the first type epitaxial layer 01, and on the top surface of the second type epitaxial layer 02. In this re-growth process, the temperature is 400° C.-1000° C., and the re-growth time is 5 s-1000 s. In some embodiments, the materials for the re-growth process are the same as the materials of the first type epitaxial layer and / or the materials of the second type epitaxial layer, but without intentional external doping ions.

[0135]

[0146] In another embodiment, the mask covers the top and part of the sidewalls of the first type epitaxial layer 01. Thus, the regrown layer 04 is formed on the entire sidewalls of the light emitting layer 03 and part of the sidewalls of the first type semiconductor layer 01.

[0136]

[0147] In some embodiments, in the etching process of step 2, when the second type epitaxial layer 02 is etched to a certain depth, a re-grown layer 04 can further be formed on a portion of the sidewall of the second type epitaxial layer 02. Thus, the position of the re-grown layer 04 is determined by the etching depth in this step 2.

[0137]

[0148] 5-7, step 4 includes forming a dielectric layer 05 on the regrown layer 04, forming an opening in the dielectric layer 05 on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening on the surface of the first type epitaxial layer 01.

[0138]

[0149] Here, first, referring to Fig. 5, a first opening is formed in the regrown layer 04 on top of the mesa structure, then, referring to Fig. 6, a bottom contact 06 is deposited in the first opening on the first type of epitaxial layer 01, then, referring to Fig. 7, a dielectric layer 05 is formed on the surface of the regrown layer 04 and on top of the bottom contact 06, and finally, a second opening is formed in the dielectric layer 05 on the first opening, thereby exposing the bottom contact 06.

[0139]

[0150] In some embodiments, the bottom contact 06 can be formed on top of the mesa structure prior to forming the regrown layer 04. Any other steps for forming a dielectric layer 05 and thereby forming the bottom contact 06 in the opening can be used in the method and are within the scope of the present disclosure.

[0140]

[0151] Referring to FIG. 8, step 5 includes forming a bottom connection structure 07 in the opening.

[0141]

[0152] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional vapor deposition process.

[0142]

[0153] Referring to FIG. 9, step 6 includes bonding the first type epitaxial layer 01 and the bottom connecting structure 07 with the IC backplane 00 by flipping the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0143]

[0154] Here, the semiconductor substrate 00' having an epitaxial structure is first flipped upside down. Then, the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor structure 00' is removed by a conventional removal process such as laser lift-off.

[0144]

[0155] Referring to FIG. 10, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0145]

[0156] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 with a mask protecting other areas. Then a top conductive layer 08 is deposited on the second epitaxial layer 02 by a conventional vapor deposition process.

[0146]

[0157] EMBODIMENT 2

[0158] The micro LED panel of embodiment 2 has a micro LED structure array. Figure 11 is a cross-sectional structural diagram of a micro LED structure according to some embodiments of the present invention (e.g. embodiment 2). Referring to Figure 11, the micro LED structure has a mesa structure, a continuous second type epitaxial layer 02, a re-grown layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0147]

[0159] The mesa structure of this embodiment has a first type of epitaxial layer 00 and a light emitting layer 03 from bottom to top, but does not have a second type of epitaxial layer 02. The second type of epitaxial layer 02 is continuously formed on top of the entire micro LED panel. Moreover, the second type of epitaxial layer 02 is continuously formed on top of the light emitting layer 03 and on top of the regrown layer 04.

[0148]

[0160] The regrown layer 04 is grown on the entire sidewall of the first type epitaxial layer 01 and the entire sidewall of the light emitting layer 03, and is fully filled between adjacent mesa structures. That is, the regrown layer 04 is fully filled in the space between adjacent mesa structures. Preferably, the top of the regrown layer 04 is aligned with the top of the light emitting layer 03. The bottom of the regrown layer 04 is lower than the bottom of the light emitting layer 03. In some embodiments, the bottom of the regrown layer 04 is lower than the bottom of the mesa structure. Moreover, the top width of the regrown layer 04 is the same as the top width of the space width between adjacent light emitting layers 03. Moreover, the regrown layer 04 is very thin, not more than 10 nm, such as 5 nm, and therefore the regrown layer 04 is transparent in some embodiments.

[0149]

[0161] Here, the regrown layer 04 is formed between adjacent micro LED structures without having any dielectric layer therein. The bottom contact 06 and bottom connection structure 07 are formed in the lower regrown layer 04 and electrically connected to the first type epitaxial layer 01. In addition, the top contact 09 and the top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel. In another embodiment, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0150]

[0162] The method for manufacturing the above-mentioned micro LED panel in this embodiment 2 includes the following steps.

[0151]

[0163] 12-19 show steps of a method for fabricating the micro LED structure of FIG. 11 according to some embodiments (eg, embodiment 2) of the present disclosure.

[0152]

[0164] 12, step 1 includes providing a semiconductor substrate 00 having an epitaxial structure. The epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02.

[0153]

[0165] Here, the epitaxial structure comprises from top to bottom a first type of epitaxial layer 01, a light emitting layer 02 and a second type of epitaxial layer 03. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on top of which the epitaxial structure is grown.

[0154]

[0166] Referring to FIG. 13, step 2 involves patterning the first type epitaxial layer 01 together with the light emitting layer 03 to form a mesa structure, and forming a bottom contact 06 at the top of the mesa structure.

[0155]

[0167] Here, a first type of epitaxial layer 01 having a light emitting layer 03 is etched from the top down by a conventional plasma etching process. A bottom contact 06 is deposited on top of the first type of epitaxial layer 01 by a conventional vapor deposition method with a mask covering the other areas.

[0156]

[0168] Then, referring to FIG. 14, a bottom contact 06 is formed on the top surface of the first type epitaxial layer 01 .

[0157]

[0169] In another embodiment, when the second type epitaxial layer 02 is etched to a certain depth in the etching process of step 2, a re-grown layer 04 can be further formed on a portion of the sidewall of the second type epitaxial layer 02. Thus, the position of the re-grown layer 04 is determined by the etching depth in this step 2.

[0158]

[0170] Referring to FIG. 15, step 3 includes forming a fully filled regrowth layer 04 in the spaces of the adjacent mesa structures and on the entire sidewalls of the light emitting layer 03 and on the entire sidewalls of the first type epitaxial layer 01 by an epitaxial material regrowth process.

[0159]

[0171] Here, the re-growth layer 04 is grown on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type semiconductor layer 01, and on the top surface of the second type epitaxial layer 02. In this re-growth process, the temperature is 400°C-1000°C and the re-growth time is 5s-1000s. The materials for the re-growth process are the same as the materials of the first type epitaxial layer and / or the materials of the second type epitaxial layer, but without intentional external doping ions.

[0160]

[0172] Referring to FIG. 16, step 4 involves forming an opening in the regrown layer 04 on the first type epitaxial layer 01 .

[0161]

[0173] Here, an opening is formed in the regrown layer 04 by a conventional plasma etching process.

[0162]

[0174] Referring to FIG. 17, step 5 includes forming a bottom connection structure 07 in the opening.

[0163]

[0175] Here, before forming the bottom connection structure 07, a bottom contact 06 is formed in an opening on the first type of epitaxial layer 01. The material of the bottom connection structure 07 is deposited in the opening and on the bottom contact 06 by a conventional vapor deposition process.

[0164]

[0176] Referring to FIG. 18, step 6 includes bonding the bottom connecting structure 07 to the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0165]

[0177] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0166]

[0178] Referring to FIG. 19, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0167]

[0179] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02, with a mask protecting other areas. A top conductive layer 08 is then deposited on the second epitaxial layer 02 by a conventional vapor deposition process.

[0168]

[0180] EMBODIMENT 3

[0181] The micro LED panel of embodiment 3 includes a micro LED structure array. Figure 20 is a cross-sectional structural diagram of a micro LED structure according to some embodiments (such as embodiment 3) of the present invention.

[0169]

[0182] Referring to FIG. 20 , the micro LED structure includes a mesa structure, a succession of a second type epitaxial layer 02, a regrown layer 04, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0170]

[0183] The mesa structure in this embodiment is composed of or includes, from the bottom up, a first type of epitaxial layer 01, a light emitting layer 03, but does not include a second type of epitaxial layer 02. The second type of epitaxial layer 02 is continuously formed on the entire micro LED panel. Furthermore, the second type of epitaxial layer 02 is continuously formed on the light emitting layer 03 and on the regrown layer 04.

[0171]

[0184] In some embodiments, the regrown layer 04 is grown on the entire sidewall of the light-emitting layer 03 and on a portion of the sidewall of the first type epitaxial layer 01. Moreover, the regrown layer 04 is fully filled between adjacent light-emitting layers 03. That is, the regrown layer 04 is fully filled in the space between adjacent light-emitting layers 03. Preferably, the top of the regrown layer 04 is aligned with the top of the light-emitting layer 03, and the bottom of the regrown layer 04 is lower than the bottom of the light-emitting layer 03. Moreover, the top width of the regrown layer 04 is the same as the top space width between adjacent light-emitting layers 03. Moreover, the regrown layer 04 is very thin, not more than 10 nm, such as 5 nm, and therefore the regrown layer 04 is transparent in some embodiments.

[0172]

[0185] In some embodiments, a dielectric layer 05 is formed between adjacent mesa structures below the regrown layer 04. A dielectric layer 05 is further formed below the mesa structures. A bottom contact 06 and a bottom connecting structure 07 are formed in the dielectric layer 05 at the bottom of the mesa structures and electrically connected to the first type epitaxial layer 01. In addition, the material of the dielectric layer 05 is transparent in some embodiments. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc.

[0173]

[0186] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel. In other embodiments, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0174]

[0187] Referring to FIG. 20, the manufacturing method of the aforementioned micro LED panel in this embodiment 3 includes the following steps:

[0175]

[0188] 21-27 show steps of a method for fabricating the micro LED structure of FIG. 20 according to some embodiments (eg, embodiment 3) of the present disclosure.

[0176]

[0189] Referring to FIG. 21, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure, which includes a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02 in order from above.

[0177]

[0190] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0178]

[0191] Referring to FIG. 22, step 2 involves patterning the first type epitaxial layer 01 and the light emitting layer 03 to form a mesa structure.

[0179]

[0192] Here, the first type epitaxial layer 01 and the light emitting layer 03 are etched from top to bottom by a conventional plasma etching process.

[0180]

[0193] Referring to FIG. 23, step 3 involves forming a regrowth layer 04 on the entire sidewall of the light emitting layer 03 and on a portion of the sidewall of the first type epitaxial layer 01 by an epitaxial material regrowth process.

[0181]

[0194] Here, the re-growth layer 04 is grown on the sidewalls of the light emitting layer 03, on the entire sidewalls and top of the first type semiconductor layer 01, and on the top surface of the second type epitaxial layer 02, with a mask R1 covering a part of the top and sidewalls of the first type epitaxial layer 01. In this re-growth process, the temperature is 400°C-1000°C, and the re-growth time is 5 seconds-1000 seconds. The materials for the re-growth process are the same as the materials of the first type epitaxial layer and / or the materials of the second type epitaxial layer, but without intentional external doping ions.

[0182]

[0195] In some embodiments, in the etching process of step 2, when the second type epitaxial layer 02 is etched to a certain depth, a regrown layer 04 can further be formed on a portion of the sidewall of the second type epitaxial layer 02. Thus, the position of the regrown layer 04 is determined by the etching depth in this step 2.

[0183]

[0196] Referring to FIG. 24, step 4 includes forming a dielectric layer 05 on the regrown layer 04, forming an opening in the dielectric layer 05 on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening on the surface of the first type epitaxial layer 01.

[0184]

[0197] Here, a dielectric layer 05 is first deposited on the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. An opening is then formed in the dielectric layer 05 on the first type epitaxial layer 01. A bottom contact 06 is then formed in the opening and connected to the first type epitaxial layer 01.

[0185]

[0198] In some embodiments, step 4 includes the following steps: First, an initial dielectric layer is deposited on the regrown layer and on the sidewalls and top of the first type of epitaxial layer. Then, the top of the initial dielectric layer is planarized to match the top of the first type of epitaxial layer, and a bottom contact is deposited on the first type of epitaxial layer. Then, another dielectric layer is deposited on the initial dielectric layer and the sidewalls and top of the mesa structure to cover the top contact, so as to form a completed dielectric layer. Then, an opening is formed in the dielectric layer to expose the bottom contact.

[0186]

[0199] Referring to FIG. 25, step 5 includes forming a bottom connection structure 07 in the opening.

[0187]

[0200] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts by a conventional evaporation process.

[0188]

[0201] Referring to FIG. 26, step 6 involves turning the semiconductor substrate 00' upside down to bond the bottom connecting structure 07 to the IC backplane 00, and then removing the semiconductor substrate 00'.

[0189]

[0202] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0190]

[0203] Referring to FIG. 27, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer.

[0191]

[0204] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas. A top conductive layer 08 is then deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0192]

[0205] EMBODIMENT 4

[0206] The micro LED panel of embodiment 4 includes a micro LED structure array. Figure 28 is a cross-sectional structural diagram of a micro LED structure according to some embodiments (such as embodiment 4) of the present invention.

[0193]

[0207] 28, a micro LED structure in a micro LED panel includes a mesa structure, a re-grown layer 04, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08. A dielectric layer 05 is formed between adjacent mesa structures.

[0194]

[0208] The mesa structure is composed of or comprises, from bottom to top, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. A regrown layer 04 is grown on the sidewalls of the first type of epitaxial layer 01 and on the entire sidewalls of the light emitting layer 03. In some embodiments, the regrown layer 04 is grown on a portion of the sidewalls of the first type of epitaxial layer 01 and on the entire sidewalls of the light emitting layer 03. Furthermore, the regrown layer 04 is very thin, such as 5 nm, and thus the regrown layer 04 is transparent in some embodiments.

[0195]

[0209] In some embodiments, the dielectric layer 05 is formed between adjacent mesa structures. Furthermore, the dielectric layer 05 is formed on the surface of the regrown layer 04 between adjacent mesa structures. The top end of the regrown layer 04 further extrudes into the dielectric layer 05. Preferably, the top end of the regrown layer 04 is connected to the adjacent light emitting layer 03 and the adjacent first type epitaxial layer 01. In addition, the top end of the regrown layer 04 extruded into the dielectric layer is parallel to the bottom surface of the second type epitaxial layer 02. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In addition, the material of the dielectric layer 05 is transparent in some embodiments.

[0196]

[0210] Here, the top of the regrown layer 04 is aligned with the top of the light emitting layer 03, the bottom of the regrown layer 04 is aligned with the bottom of the first type of epitaxial layer 01, and furthermore, the regrown layer 04 is formed on the bottom of the first type of epitaxial layer 01. A bottom contact 06 is formed on the bottom of the first type of epitaxial layer 01 in the regrown layer 04, and a bottom connection structure 07 is formed on the bottom of the bottom contact 06 in the dielectric layer 05.

[0197]

[0211] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel. In other embodiments, the top conductive layer 08 is formed on the top contact and a portion of the top surface of the second type epitaxial layer 02.

[0198]

[0212] The manufacturing method of the aforementioned micro LED panel in this embodiment 4 includes the following steps:

[0199]

[0213] 29-39 show method steps for manufacturing the micro LED structure of FIG.

[0200]

[0214] Referring to FIG. 29, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure.

[0201]

[0215] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0202]

[0216] Referring to FIG. 30, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0203]

[0217] Here, the epitaxial structure is etched from the top down by a conventional plasma etching process.

[0204]

[0218] Referring to FIG. 31, step 3 includes forming a first mask pattern R1 on the semiconductor substrate 00' to cover the sidewalls of the first type epitaxial layer 01 and the sidewalls of the light emitting layer 03.

[0205]

[0219] Here, the first mask pattern R1 is formed by a conventional photolithography process, and is formed to cover the sidewall of the light emitting layer 03 and the entire sidewall and top of the first type epitaxial layer 01.

[0206]

[0220] Referring to FIG. 32, step 4 includes depositing a first dielectric layer 051 on the semiconductor substrate 00' between adjacent mesa structures, with the top of the first dielectric layer 051 aligned with the bottom of the light emitting layer 03.

[0207]

[0221] Here, a first dielectric layer 051 is deposited on the semiconductor substrate 00' and on the surface of the mask pattern R1 by a conventional vapor deposition process under the protection of the first mask pattern R1. The top of the first dielectric layer 051 is aligned with the bottom of the light emitting layer 03.

[0208]

[0222] In some embodiments, the bottom of the first mask pattern R1 is now aligned with the bottom of the light emitting layer 03, so that a dielectric layer 051 is formed on the entire sidewall of the second type of epitaxial layer 02, and then a regrown layer 04 is formed on the entire sidewall of the light emitting layer 03 and on the sidewall of the first type of epitaxial layer 02.

[0209]

[0223] In another embodiment, the bottom of the first mask pattern R1 is lower than the bottom of the light emitting layer 03, and therefore the top of the first dielectric layer 051 is lower than the top of the second type epitaxial layer 02, so that the regrown layer 04 can be formed on the sidewall of the first type epitaxial layer 01, the entire sidewall of the light emitting layer 03, and a part of the sidewall of the second type epitaxial layer 02. Thus, the position of the regrown layer 04 is determined by the bottom of the first mask pattern R1.

[0210]

[0224] The first mask pattern R1 is then removed by a chemical etching process.

[0211]

[0225] Referring to FIG. 33, step 5 involves forming a regrowth layer 04 on the entire sidewall of the light emitting layer 03 and on at least a portion of the sidewall of the first epitaxial layer 01 by an epitaxial material regrowth process.

[0212]

[0226] Here, the re-growth layer 04 is grown directly on the entire sidewall of the light emitting layer 03 and on the top and entire sidewall of the first epitaxial layer 01, and deposited on the top surface of the first dielectric layer 051. In this re-growth process, the temperature is 400°C-1000°C, and the re-growth time is 5 seconds-1000 seconds. The materials for the re-growth process are the same as the materials of the first type of epitaxial layer and / or the materials of the second type of epitaxial layer, but without intentional external doping ions. In some embodiments, when the top of the first dielectric layer 051 is lower than the bottom of the light emitting layer, the re-growth layer 04 is further formed on at least a portion of the sidewall of the second type of epitaxial layer 02.

[0213]

[0227] FIG. 40 is a cross-sectional structure of another alternative step 6 according to embodiment 4 of the present invention.

[0214]

[0228] FIG. 41 is a cross-sectional structural diagram of another micro LED structure according to some embodiments of the present invention (e.g., Alternative Embodiment 4).

[0215]

[0229] In another embodiment, referring to Fig. 40, in step 6, before forming the regrown layer 04, step 6 further includes forming a second mask pattern R2 covering the top and a part of the sidewall of the first type epitaxial layer 01, forming the regrown layer 04 on the entire sidewall of the light emitting layer 03 and a part of the sidewall of the first type epitaxial layer 01, and removing the second mask pattern R2 after forming the regrown layer 04. Thus, referring to Fig. 41, the regrown layer 04 can be formed on a part of the first type epitaxial layer 01 and on the entire sidewall of the light emitting layer 03. Thus, the position of the regrown layer 04 is determined by the bottom position of the second mask pattern R2.

[0216]

[0230] Referring to FIG. 36, step 7 includes forming a bottom contact 06 in a regrown layer 04 on the upper surface of the first type epitaxial layer 01, and forming a second dielectric layer 02 on the regrown layer 04 with an opening exposing an upper portion of the bottom contact 06.

[0217]

[0231] Now, referring to FIG. 34, a first opening is formed in the regrown layer 04 on the upper surface of the first type of epitaxial layer 01 by a plasma etching process, then, referring to FIG. 35, a bottom contact 06 is first deposited in the opening with a mask covering other areas except the first opening, and the bottom contact 06 is connected to the first type of epitaxial layer 01, then the mask is removed, then, referring to FIG. 36, a second dielectric layer 052 is deposited on the surface of the regrown layer 04 by a conventional chemical vapor deposition process, and then another opening is formed in the second dielectric layer 052 to expose the upper part of the bottom contact 06.

[0218]

[0232] In another embodiment, step 7 includes forming a second dielectric layer on the regrown layer, forming an opening in the second dielectric layer on the first type of epitaxial layer, and filling a bottom contact in the opening, where the second dielectric layer is deposited on a surface of the regrown layer by a conventional chemical vapor deposition process, then an opening is formed in the second dielectric layer and in the regrown layer on top of the first type of epitaxial layer, and then a bottom contact is deposited in the opening and connected to the first type of epitaxial layer.

[0219]

[0233] In another embodiment, step 7 includes forming a bottom contact 06 before depositing the regrown layer 04, then depositing the regrown layer 04 on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type of epitaxial layer 01 and on the bottom contact 06, then forming a second dielectric layer 052 on the regrown layer 04, and finally forming an opening in the second dielectric layer 052 and the regrown layer 04 to expose the bottom contact 06.

[0220]

[0234] Referring to FIG. 37, step 8 includes forming a bottom connection structure 07 in the opening.

[0221]

[0235] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts by a conventional evaporation process.

[0222]

[0236] Referring to FIG. 38, step 9 includes bonding the bottom connecting structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0223]

[0237] Here, the semiconductor substrate 00' with epitaxial structure is first turned upside down, and then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off method.

[0224]

[0238] Referring to FIG. 39, step 10 includes forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0225]

[0239] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas, and then a top conductive layer 08 is deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0226]

[0240] In some embodiments, the dielectric layer of FIG. 28 is now formed by the first dielectric layer 051 and the second dielectric layer 052 of FIG.

[0227]

[0241] Another method for manufacturing the above-mentioned micro LED panel of embodiment 4 includes the following steps.

[0228]

[0242] 42-50 show steps of another alternative method for manufacturing the micro LED structure of FIG.

[0229]

[0243] Referring to FIG. 42, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure.

[0230]

[0244] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0231]

[0245] Referring to FIG. 43, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0232]

[0246] Here, the epitaxial structure is etched from the top down by a conventional plasma etching process.

[0233]

[0247] 44, step 3 includes forming a first mask pattern R1 on the semiconductor body 00′ to cover the sidewall of the second type epitaxial layer 02. The top of the first mask pattern R1 is not higher than the bottom of the light emitting layer 03.

[0234]

[0248] Here, a first mask pattern R1 is formed on the semiconductor substrate 00' by a conventional photolithography process to cover the sidewalls of the second type epitaxial layer 02. The top of the first mask pattern R1 is aligned with the bottom of the light emitting layer 03. In some embodiments, the top of the first mask pattern R1 is lower than the bottom of the light emitting layer 03, and a regrown layer 04 can be formed on a portion of the sidewalls of the second type epitaxial layer 02.

[0235]

[0249] Referring to FIG. 45, step 4 involves forming a regrowth layer 04 on the sidewalls of the light emitting layer 03 and on at least a portion of the sidewalls of the first epitaxial layer 01 by an epitaxial material regrowth process.

[0236]

[0250] Here, the re-grown layer 04 is grown directly on the entire sidewall of the light emitting layer 03 and on the top and entire sidewall of the first type epitaxial layer 01, and deposited on the top surface of the first mask pattern R1. In this re-growth process, the temperature is 400°C-1000°C, and the re-growth time is 5s-1000s. The materials for the re-growth process are the same as the materials of the first type epitaxial layer and / or the materials of the second type epitaxial layer, but without intentional external doping ions. In some embodiments, the re-grown layer 04 is further formed on at least a part of the sidewall of the second type epitaxial layer 02 when the top of the first mask pattern R1 is lower than the bottom of the light emitting layer 03.

[0237]

[0251] In another embodiment, in step 4, before growing the regrown layer 04, step 4 further includes forming a second mask pattern covering the top and a portion of the sidewall of the first type epitaxial layer 01. The regrown layer 04 is formed on the entire sidewall of the light emitting layer 03 and a portion of the sidewall of the first type epitaxial layer 01. After forming the regrown layer 04, step 4 further includes removing the second mask pattern. Thus, the regrown layer 04 can be formed on a portion of the first type epitaxial layer 01 and on the entire sidewall of the light emitting layer 03.

[0238]

[0252] Referring to FIG. 46, step 5 includes forming a dielectric layer 052 on the regrown layer 04, forming an opening on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening.

[0239]

[0253] Here, a dielectric layer 052 is deposited on the surface of the regrown layer 04 by a conventional chemical vapor deposition process, then an opening is formed in the dielectric layer 052 and in the regrown layer 04 on top of the first type of epitaxial layer 01, and then a bottom contact 06 is deposited in the opening and connected to the first type of epitaxial layer 01.

[0240]

[0254] In some embodiments, step 5 includes the steps of first forming a first opening in the regrown layer 04 on top of the first type of epitaxial layer 01, then depositing the bottom contact 06 in the first opening with a mask covering other areas except the first opening, removing the mask, then depositing a dielectric layer 052 over the regrown layer 04 and the bottom contact 06, and then forming a second opening in the dielectric layer 052 over the first opening to expose the bottom contact 06.

[0241]

[0255] In another embodiment, step 5 includes forming a bottom contact 06 before depositing the regrown layer 04, then depositing the regrown layer 04 on the sidewalls of the light emitting layer 03, on the sidewalls and top of the first type of epitaxial layer 01 and on the bottom contact 06, then forming a second type of epitaxial layer 02 on the regrown layer 04, and finally forming an opening in the second type of epitaxial layer 02 and the regrown layer 04 to expose the bottom contact 06.

[0242]

[0256] Referring to FIG. 47, step 8 includes forming a bottom connection structure 07 in the opening.

[0243]

[0257] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional evaporation process.

[0244]

[0258] Referring to FIG. 48, step 9 includes bonding the bottom connecting structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0245]

[0259] Here, the semiconductor substrate 00' having an epitaxial structure is first turned upside down, then the bottom connection structure 07 is bonded with the pad of the IC backplane 00, and after the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off method.

[0246]

[0260] Referring to FIG. 49, step 10 involves forming another dielectric layer 051 over the regrown layer 04 and between adjacent mesa structures.

[0247]

[0261] Here, another dielectric layer 051 is deposited on the regrown layer 04 by conventional chemical vapor deposition.

[0248]

[0262] Referring to FIG. 50, step 11 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0249]

[0263] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas, then the mask is removed and finally a top conductive layer 08 is deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0250]

[0264] It will be understood by those skilled in the art that the microdisplay panel is not limited to the structures described above and may include more or fewer components than those shown, or some components may be combined, or different components may be utilized.

[0251]

[0265] It should be understood by those skilled in the art that all or part of the steps for implementing the above-mentioned embodiments may be implemented by hardware, or by a program instructing related hardware. The program may be stored in a flash memory, a conventional computer device, a central processing module, a control module, etc.

[0252]

[0266] The above description is merely an embodiment of the present disclosure, and the present disclosure is not limited to such an embodiment. Any modifications, equivalent replacements, and improvements made without departing from the concept and principle of the present disclosure shall fall within the protection scope of the present disclosure.

[0253]

[0267] Further embodiments include various subsets of the above-described embodiments, including those illustrated in Figures 1-50, which may be combined or rearranged in various other embodiments.

[0254]

[0268] Although the detailed description includes many specifics, they should not be interpreted as limiting the scope of the present invention, but merely as illustrating various examples and aspects of the present invention. It should be understood that the scope of the present invention includes other embodiments not discussed in detail above. For example, the above-described techniques can be applied to integrating functional devices other than LEDs and OLEDs with control circuits other than pixel drivers. Examples of non-LED devices include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuits include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0255]

[0269] The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variations thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the appended claims and the principles and novel features disclosed herein.

[0256]

[0270] Features of the present invention may be implemented by, using, or with the aid of a computer program product, such as a storage medium or computer-readable storage medium having stored thereon / in which instructions usable to program a processing system to perform any of the features described herein. The storage medium may include high-speed random access memory, such as, but not limited to, DRAM, SRAM, DDR RAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices. The memory optionally includes one or more storage devices located remotely from the CPU. The memory or non-volatile memory devices within the memory include non-transitory computer-readable storage media.

[0257]

[0271] Stored on any machine-readable medium, features of the present invention may be embodied in software and / or firmware for controlling the hardware of a processing system and for enabling the processing system to interact with other mechanisms utilizing the results of the present invention. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0258]

[0272] It will be understood that although terms such as "first," "second," etc. may be used herein to refer to various elements or steps, these elements or steps should not be limited by these terms, but are merely used to distinguish one element or step from another.

[0259]

[0273] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of the claims. When used in the description of the embodiments and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural unless the context clearly indicates otherwise. It will also be understood that the term "and / or" as used herein refers to and includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0260]

[0274] As used herein, the term "if" may be interpreted to mean "when" or "upon" or "in response to determining that" or "in response to detecting that" the stated antecedent condition is true, depending on the context. Similarly, the phrases "if it is determined" or "if" or "when the stated antecedent condition is true" may be interpreted to mean "upon determining" or "in response to determining" or "in accordance with a determination" or "upon detecting" or "in response to detecting" the stated antecedent condition is true, depending on the context.

[0261]

[0275] The above description has been set forth for purposes of illustration with respect to specific embodiments. However, the above illustrative discussion is not intended to be exhaustive or to limit the scope of the claims to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. The embodiments have been chosen and described in order to best explain the principles of operation and practical application, thereby enabling others skilled in the art to best utilize the invention and various embodiments.

Claims

1. A micro LED panel having a micro LED array, At least one micro LED structure, the micro LED structure having at least The mesa structure includes, from bottom to top, a first type epitaxial layer and a light emitting layer; a second type of epitaxial layer formed continuously on top of the light emitting layer and continuously on the entire area of ​​the micro LED panel; a regrowth layer grown on at least a portion of the sidewalls of the first type epitaxial layer and on the entire sidewall of the light emitting layer; A micro LED panel having

2. 10. The micro LED panel of claim 1, further comprising a dielectric layer formed between adjacent mesa structures, an upper end of the re-grown layer further extruding along an upper surface of the dielectric layer, and the second type of epitaxial layer formed on top of the light emitting layer and on top of the re-grown layer.

3. 2. The micro LED panel of claim 1, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extending direction of the light emitting layer.

4. 4. The micro LED panel of claim 3, wherein an inclination angle of the re-grown layer on the sidewalls of the light-emitting layer is between 30 degrees and 90 degrees relative to the extending direction of the light-emitting layer, and the re-grown layer extruded along the dielectric layer is parallel to an upper surface of the dielectric layer.

5. 3. The micro LED panel of claim 2, wherein the re-grown layer extruded along the top of the dielectric layer is connected to the adjacent light emitting layer and the first type epitaxial layer.

6. 2. The micro LED panel of claim 1, wherein the re-growth layer is further formed on the entire sidewalls of the first type epitaxial layer and the light emitting layer.

7. 7. The micro LED panel of claim 6, wherein the re-growth layer is further formed on a bottom surface of the first type epitaxial layer.

8. 10. The micro LED panel of claim 1, wherein the mesa diameter is less than or equal to 3 μm.

9. 2. The micro LED panel of claim 1, wherein the light emitting layer has a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

10. 10. The micro LED panel of claim 1, wherein the light emitting layer has pairs of quantum wells, and the regrown layers on the sidewalls of the light emitting layer are non-parallel to each of the pairs of quantum wells.

11. 10. The micro LED panel of claim 1, wherein the light emitting layer has a linear shape without any bends.

12. 2. The micro LED panel of claim 1, wherein the material of the re-grown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional external doping ions.

13. 13. The micro LED panel of claim 12, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

14. 10. The micro LED panel of claim 1, wherein a material of the re-grown layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

15. 10. The micro LED panel of claim 1, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

16. 10. The micro LED panel of claim 1 , wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

17. 17. The micro LED panel of claim 16, wherein the re-grown layer has a thickness of 100 nm or less.

18. 10. The micro LED panel of claim 1, wherein the re-grown layer has a higher resistance than the light emitting layer.

19. 10. The micro LED panel of claim 1, wherein the re-grown layer is not conductive.

20. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 3. The micro LED panel of claim 2, wherein

21. 2. The micro LED panel of claim 1, wherein the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

22. A method for manufacturing a micro LED panel according to claim 1, comprising the steps of: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from top to bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3: forming a regrowth layer on the sidewalls of the light emitting layer and on at least a portion of the sidewalls of the first type epitaxial layer by an epitaxial material regrowth process; Step 4. forming a dielectric layer on the regrown layer, forming an opening in the dielectric layer on the first type epitaxial layer, and forming a bottom contact in the opening on a surface of the first type epitaxial layer; Step 5. Forming a bottom connection structure in the opening; Step 6: bonding the first type epitaxial layer and the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; The method according to claim 1,

23. 23. The method of claim 22, wherein the regrowth layer is further formed on the entire sidewall and top of the first type epitaxial layer, and in step 4, the opening is further formed in the regrowth layer on the first type epitaxial layer, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

24. 23. The method of claim 22, further comprising, in step 3, forming a mask pattern covering an upper portion of the first type epitaxial layer and a portion of the sidewall before forming the regrown layer, and removing the mask pattern after forming the regrown layer.

25. A micro LED panel, a micro LED structure array having at least two micro LED structures, each of the micro LED structures comprising: The mesa structure includes, from bottom to top, a first type epitaxial layer and a light emitting layer; a second type of epitaxial layer formed continuously on top of the light emitting layer and on top of the regrown layer, the second type of epitaxial layer being formed continuously on the entire area of ​​the micro LED panel; a regrowth layer grown on the entire sidewalls of the first type epitaxial layer and the entire sidewalls of the light emitting layer, the regrowth layer being fully filled between adjacent mesa structures; A micro LED panel having

26. 26. The micro LED panel of claim 25, wherein a top width of the re-grown layer is the same as a top width of a space between adjacent light emitting layers of adjacent micro LED structures.

27. 26. The micro LED panel of claim 25, wherein the mesa structure has a diameter of 3 μm or less.

28. 26. The micro LED panel of claim 25, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top surface and the bottom surface of the light emitting layer.

29. 26. The micro LED panel of claim 25, wherein the light emitting layer comprises pairs of quantum wells.

30. 26. The micro LED panel of claim 25, wherein the light emitting layer has a linear shape without any bends.

31. 26. The micro LED panel of claim 25, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional external doping ions.

32. 32. The micro LED panel of claim 31 , wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

33. 26. The micro LED panel of claim 25, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

34. 26. The micro LED panel of claim 25, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

35. 26. The micro LED panel of claim 25, wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

36. 36. The micro LED panel of claim 35, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

37. 26. The micro LED panel of claim 25, wherein the re-grown layer has a higher resistance than the light emitting layer.

38. 38. The micro LED panel of claim 37, wherein the re-grown layer is not electrically conductive.

39. 26. The micro LED panel of claim 25, wherein the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

40. 26. The micro LED panel of claim 25, wherein a bottom connection structure is formed in the re-grown layer below and electrically connected to the first type epitaxial layer.

41. 26. A method for manufacturing a micro LED panel according to claim 25, comprising the steps of: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from top to bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer, and forming a bottom contact at the top of the mesa structure; Step 3: forming a fully filled regrowth layer on the entire sidewall of the light emitting layer and on the entire sidewall of the first type epitaxial layer in the space of the adjacent mesa structure by an epitaxial material regrowth process; Step 4, forming an opening in the regrown layer on the first type epitaxial layer; Step 5. Forming a bottom connection structure in the opening; Step 6: bonding the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; The method according to claim 1,

42. 42. The method of claim 41, wherein in step 3, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

43. A micro LED panel, a micro LED structure array having at least one micro LED structure, the micro LED structure comprising: The mesa structure includes, from bottom to top, a first type epitaxial layer and a light emitting layer; a second type of epitaxial layer formed continuously on the top of the light emitting layer and the re-grown layer, the second type of epitaxial layer being formed continuously on the entire area of ​​the micro LED panel; a regrowth layer grown on a portion of the sidewalls of the first type epitaxial layer and on the entire sidewall of the light emitting layer, filling between adjacent mesa structures; A micro LED panel having

44. 44. The micro LED panel of claim 43, wherein a top width of the re-grown layer is the same as a top space width between adjacent light emitting layers.

45. 44. The micro LED panel of claim 43, further comprising a dielectric layer formed underneath the re-grown layer.

46. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 46. ​​The micro LED panel of claim 45, wherein

47. 44. The micro LED panel of claim 43, wherein a bottom connection structure is formed in the underlying dielectric layer and electrically connected to the first type epitaxial layer.

48. 44. The micro LED panel of claim 43, wherein the mesa structure has a diameter of 3 μm or less.

49. 44. The micro LED panel of claim 43, wherein the light emitting layer has a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

50. 44. The micro LED panel of claim 43, wherein the light emitting layer comprises multiple pairs of quantum wells.

51. 44. The micro LED panel of claim 43, wherein the light emitting layer has a straight shape without any bends.

52. 44. The micro LED panel of claim 43, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but has no intentional external doping material.

53. 53. The micro LED panel of claim 52, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

54. 44. The micro LED panel of claim 43, wherein a material of the re-grown layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

55. 44. The micro LED panel of claim 43, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

56. 44. The micro LED panel of claim 43, wherein a thickness of the re-grown layer is less than a thickness of the light emitting layer.

57. 57. The micro LED panel of claim 56, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

58. 44. The micro LED panel of claim 43, wherein the resistance of the re-grown layer is higher than the resistance of the light emitting layer.

59. 60. The micro LED panel of claim 58, wherein the re-grown layer is not electrically conductive.

60. 44. The micro LED panel of claim 43, wherein the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

61. 44. A method for manufacturing a micro LED panel according to claim 43, comprising the steps of: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from top to bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3: forming a regrowth layer on the entire sidewall of the light emitting layer and on a portion of the sidewall of the first type epitaxial layer by an epitaxial material regrowth process; Step 4. forming a dielectric layer on the regrown layer, forming an opening in the dielectric layer on the first type epitaxial layer, and forming a bottom contact in the opening on a surface of the first type epitaxial layer; Step 5. Forming a bottom connection structure in the opening; Step 6: bonding the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 7. forming a top contact and a top conductive layer on the second epitaxial layer; The method according to claim 1,

62. 62. The method of claim 61, wherein the temperature in the regrowth process is between 400° C. and 1000° C., and the regrowth time is between 5 seconds and 1000 seconds.

63. A micro LED panel, a micro LED structure array having at least one micro LED structure, the micro LED structure comprising:

1. A micro LED panel having a mesa structure comprising, from bottom to top, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer, and a re-grown layer grown on at least a portion of a sidewall of the first type of epitaxial layer and on the entire sidewall of the light emitting layer.

64. 64. The micro LED panel of claim 63, wherein a dielectric layer is formed between adjacent mesa structures, and an upper end of the re-grown layer extrudes further into the dielectric layer.

65. 65. The micro LED panel of claim 64, wherein the re-grown layer extruded into the dielectric layer is connected to an adjacent light emitting layer and an adjacent first type epitaxial layer.

66. 64. The micro LED panel of claim 63, wherein the re-grown layer is grown on the entire sidewalls of the light emitting layer and the entire sidewalls of the first type epitaxial layer.

67. 64. The micro LED panel of claim 63, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

68. 65. The micro LED panel of claim 64, wherein a tilt angle of the re-grown layer on the sidewall of the light emitting layer is between 30 degrees and 90 degrees relative to an extension direction of the light emitting layer, and the re-grown layer extruded into the dielectric layer is parallel to a bottom surface of the second type epitaxial layer.

69. 64. The micro LED panel of claim 63, wherein the mesa structure has a diameter of 3 μm or less.

70. 64. The micro LED panel of claim 63, wherein the light emitting layer has a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

71. 71. The micro LED panel of claim 70, wherein the light emitting layer has pairs of quantum wells, and the regrown layers on the sidewalls of the light emitting layer are non-parallel to each of the pairs of quantum wells.

72. 64. The micro LED panel of claim 63, wherein the light emitting layer has a linear shape without any bends.

73. 64. The micro LED panel of claim 63, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but with no intentional external doping ions.

74. 64. The micro LED panel of claim 63, wherein the material of the re-grown layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

75. 64. The micro LED panel of claim 63, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

76. 64. The micro LED panel of claim 63, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

77. 64. The micro LED panel of claim 63, wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

78. 78. The micro LED panel of claim 77, wherein the re-grown layer has a thickness of 100 nm or less.

79. 64. The micro LED panel of claim 63, wherein the regrown layer has a higher resistance than the light emitting layer.

80. 80. The micro LED panel of claim 79, wherein the re-grown layer is not conductive.

81. 64. The micro LED panel of claim 63, wherein the dielectric layer is formed on a surface of the re-grown layer between adjacent mesa structures.

82. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 64. The micro LED panel of claim 63, wherein

83. 64. The micro LED panel of claim 63, wherein the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

84. 64. A method for manufacturing a micro LED panel according to claim 63, comprising the steps of: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from top to bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover a sidewall of the first type epitaxial layer and a sidewall of the light emitting layer; Step 4. depositing a first dielectric layer on the substrate between adjacent mesa structures, the top of the first dielectric layer being aligned with the bottom of the light emitting layer; Step 5: removing the first mask pattern; Step 6. forming a regrowth layer on the entire sidewall of the light emitting layer and on at least a portion of the sidewall of the first epitaxial layer by an epitaxial material regrowth process; Step 7, forming a second dielectric layer on the regrown layer, forming an opening on the first type epitaxial layer, and filling a bottom contact in the opening; Step 8: forming a bottom connection structure in the opening; Step 9: bonding the first type epitaxial layer and the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 10. forming a top contact and a top conductive layer on the second epitaxial layer; The method according to claim 1,

85. 85. The method of claim 84, further comprising: in step 6, forming a second mask pattern covering a top and a portion of a sidewall of the first type epitaxial layer before forming the regrown layer, the regrown layer being formed on the entire sidewall of the light emitting layer and a portion of the sidewall of the first type epitaxial layer; and removing the second mask pattern after forming the regrown layer.

86. 85. The method of claim 84, wherein in step 6, the regrowth layer is formed directly on the entire sidewalls of the light emitting layer, on the entire sidewalls of the first type epitaxial layer, and on top of the first type epitaxial layer.

87. 85. The method of claim 84, wherein in step 6, the temperature in the regrowth process is between 400° C. and 1000° C., and the regrowth time is between 5 seconds and 1000 seconds.

88. 64. A method for manufacturing a micro LED panel according to claim 63, comprising the steps of: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from top to bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover a sidewall of the second type epitaxial layer, and an upper portion of the first mask pattern is not higher than a lower portion of the light emitting layer; Step 4. forming a regrowth layer on sidewalls of the light emitting layer and on at least a portion of sidewalls of the first epitaxial layer by an epitaxial material regrowth process; Step 5. forming a first dielectric layer on the regrown layer, forming an opening on the first type epitaxial layer, and filling a bottom contact in the opening; Step 8: forming a bottom connection structure in the opening; Step 9: bonding the first type epitaxial layer and the bottom connection structure with an IC backplane by flipping the semiconductor substrate upside down, and then removing the semiconductor substrate; Step 10. forming a second dielectric layer on the regrown layer between adjacent mesa structures; Step 11. forming a top contact and a top conductive layer on the second epitaxial layer; The method according to claim 1,

89. In step 4, before forming the regrown layer, a second mask pattern is formed to cover the top and a part of the sidewall of the first type epitaxial layer, and the regrown layer is formed on the entire sidewall of the light emitting layer and a part of the sidewall of the first type epitaxial layer; and after forming the regrown layer, the mask pattern is removed; 89. The method of claim 88, further comprising:

90. 90. The method of claim 88, wherein a material of the first mask pattern is different from a material of the second mask pattern.

91. 90. The method of claim 88, wherein in step 4, the regrowth layer is formed directly on the entire sidewalls of the light emitting layer, on the entire sidewalls of the first type epitaxial layer, and on top of the first type epitaxial layer.

92. 89. The method of claim 88, wherein in step 4, the temperature in the regrowth process is between 400° C. and 1000° C., and the regrowth time is between 5 seconds and 1000 seconds.

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