Micro LED panel with re-grown layer and method for manufacturing same

Abstract

The present disclosure provides a micro LED panel having a micro LED array, and systems and methods for manufacturing the micro LED panel. The micro LED array includes at least one micro LED structure. The micro LED structure includes at least a mesa structure and a regrowth layer. In some embodiments, the mesa structure includes a light emitting layer. In some embodiments, the regrowth layer is grown on at least a sidewall of the light emitting layer. The regrowth layer is not parallel to the extension direction of the light emitting layer.

Description

[Technical field]

[0001] Technical Field The present disclosure relates generally to light emitting diode (LED) technology, and more particularly to micro LED panels and methods for manufacturing micro LED structures. [Background technology]

[0002] background

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in large stationary screens, such as liquid crystal display televisions (LCD TVs) and organic light emitting diode televisions (OLED TVs), as well as in portable electronic devices, such as laptop personal computers, smartphones, tablets, and wearable electronic devices.

[0003]

[0003] Inorganic micro light-emitting diodes are gaining importance as they are used in a variety of applications, including self-luminous microdisplays, visible light communication, and optogenetics. Micro LEDs exhibit higher power performance than conventional LEDs due to better strain relief, improved light extraction efficiency, and uniform current spreading. Micro LEDs also exhibit improved thermal effects, and operate at higher current densities, faster response speeds, wider operating temperature ranges, higher resolutions, color gamuts, and contrasts, and lower power consumption compared to conventional LEDs.

[0004]

[0004] To achieve higher pixel density, the size of micro-LEDs is scaled down to less than 200 nm. However, the efficiency and carrier lifetime of devices based on micro-LED arrays degrades significantly with the reduction in size of micro-LEDs due to surface recombination and poor p-type conduction caused by top-down etching. The performance of micro-LEDs also suffers greatly from the quantum confined Stark effect, especially due to strain-induced polarization fields, which causes unstable operation and significant variation in emission wavelength with increasing current. In addition, as the diameter of micro-LEDs decreases, inductively coupled plasma (ICP) etching creates a large number of surface states and defects on the surface of the micro-LED structure, which increases non-radiative recombination at the surface of the micro-LED structure.

[0005]

[0005] In addition, the light emitted by the conventional micro LED structure is mainly dispersed in random directions, exhibiting poor directional light emission and reducing the light intensity along the vertical direction. In order to realize the directional light emission of the micro LED structure, an additional reflective structure is configured around the mesa and at the bottom of the mesa of the micro LED structure to reflect the emitted light in the same direction, which causes a complex manufacturing process and increases the cost of the micro LED.

[0006]

[0006] Furthermore, in micro-LED array-based devices, one micro-LED has traditionally been used as one pixel, as in monolithic micro-LED array panels, but the small diameter micro-LED structures exhibit low external quantum efficiency (EQE), reducing the light efficiency of each pixel.

[0007]

[0007] The above contents are only used to assist in understanding the technical solutions of the present application, and are not acknowledged as being prior art.

[0008] overview

[0008] There is a need for improved display designs that help to ameliorate and address the shortcomings of conventional display systems such as those discussed above. In particular, there is a need for display panels that have improved efficiency and better images.

[0009]

[0009] To overcome the above drawbacks, the present invention provides a micro LED panel to improve luminous efficiency, avoid crosstalk, minimize surface carrier loss, and optimize the sidewall area of ​​the quantum well. Summary of the Invention [Means for solving the problem]

[0010]

[0010] To achieve the above objectives, in one aspect of some exemplary embodiments, the present disclosure provides a micro LED panel having a micro LED array including at least one micro LED structure, the micro LED structure including at least a mesa structure including, from bottom to top, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer, and a re-growth layer grown on at least a sidewall of the light emitting layer.

[0011]

[0011] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a re-growth layer is grown on the entire sidewall of the light emitting layer and on a portion of the second type of epitaxial layer.

[0012]

[0012] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the re-grown layer is not parallel to the extension direction of the light emitting layer.

[0013]

[0013] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the inclination angle of the regrown layer relative to the extension direction of the light emitting layer is between 30 degrees and 90 degrees.

[0014]

[0014] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0015]

[0015] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer grows only on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0016]

[0016] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes multiple pairs of quantum wells and the regrown layer is not parallel to the surfaces of each of the multiple pairs of quantum wells.

[0017]

[0017] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0018]

[0018] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional doping ions.

[0019]

[0019] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the re-grown layer is at least one selected from the group consisting of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and InN.

[0020]

[0020] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0021]

[0021] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0022]

[0022] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0023]

[0023] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0024]

[0024] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0025]

[0025] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the re-grown layer is not conductive.

[0026]

[0026] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a dielectric layer is further formed between adjacent mesa structures and on the surface of the regrown layer.

[0027]

[0027] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a bottom connection structure is formed at the bottom of the mesa structure and electrically connected to the first type of epitaxial layer, and an upper conductive layer is formed on the second type of epitaxial layer and electrically connected to the second type of epitaxial layer.

[0028]

[0028] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc.

[0029]

[0029] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0030] In another aspect of some exemplary embodiments, the present disclosure provides a method for manufacturing a micro LED panel, including: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2, forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to expose a sidewall of the light emitting layer; Step 4, forming a regrowth layer on the sidewall of the light emitting layer through a regrowth process of epitaxial material; Step 5: removing the mask pattern; Step 6, depositing a dielectric layer on the regrown layer and forming an opening in the dielectric layer on the surface of the first type epitaxial layer, and then forming a bottom contact in the opening; Step 7, forming a bottom connection structure in the opening; Step 8: turning the semiconductor substrate upside down to bond the bottom connection structure with the IC backplane, and then removing the semiconductor substrate; and Step 9. Forming a top contact and a top conductive layer on the second type epitaxial layer.

[0031]

[0031] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 3, the mask pattern includes a first mask pattern covering the first type of epitaxial layer and a second mask pattern covering the semiconductor substrate and sidewalls of the second type of epitaxial layer.

[0032]

[0032] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 4, a regrowth process of epitaxial material includes growing a regrowth layer on the sidewalls of the light-emitting layer and depositing epitaxial material on the surfaces of the first mask pattern and the second mask pattern.

[0033]

[0033] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, step 8 further includes removing the epitaxial material on the second mask pattern by etching the epitaxial material.

[0034]

[0034] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 4, in the re-growth process, the temperature is 400°C to 1000°C and the re-growth time is 5 seconds to 1000 seconds.

[0035]

[0035] In some exemplary embodiments of the method for manufacturing a micro LED panel, or any combination of the preceding exemplary embodiments, the top conductive layer is formed continuously over the entire micro LED panel.

[0036]

[0036] In another aspect of some exemplary embodiments, the present disclosure provides a micro LED panel including a micro LED structure array including at least two micro LED structures, each micro LED structure including, from bottom to top, a mesa structure including a first type of epitaxial layer and a light emitting layer, a second type of epitaxial layer formed continuously on top of the light emitting layer and on top of the re-grown layer and formed continuously on the entire micro LED panel, and a re-grown layer grown on entire sidewalls of the light emitting layer and completely filling between adjacent light emitting layers of adjacent micro LED structures.

[0037]

[0037] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the bottom width of the regrown layer is the same as the space width between adjacent light emitting layers.

[0038]

[0038] In some exemplary embodiments or any combination of the preceding exemplary embodiments, the micro LED panel further includes a dielectric layer formed on the bottom of the re-grown layer between adjacent mesa structures of adjacent micro LED structures.

[0039]

[0039] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc.

[0040]

[0040] In some exemplary embodiments or any combination of the preceding exemplary embodiments, the micro LED panel further includes a bottom connection structure formed in the underlying dielectric layer and electrically connected to the first type of epitaxial layer.

[0041]

[0041] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0042]

[0042] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0043]

[0043] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes multiple pairs of quantum wells.

[0044]

[0044] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0045]

[0045] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional doping ions.

[0046]

[0046] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the re-grown layer is selected from at least one of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0047]

[0047] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0048]

[0048] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0049]

[0049] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0050]

[0050] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0051]

[0051] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0052]

[0052] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the re-grown layer is not conductive.

[0053]

[0053] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, etc., and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, etc.

[0054] In another aspect of some exemplary embodiments, the present disclosure provides a method for manufacturing a micro LED panel, including: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3, forming a regrowth layer on the entire sidewall of the light emitting layer through a regrowth process of epitaxial material; Step 4, forming a dielectric layer on the regrown layer, forming an opening in the dielectric layer on the first type epitaxial layer, and then forming a bottom contact in the opening on the surface of the first type epitaxial layer; Step 5, forming a bottom connection structure in the opening; Step 6: turning the semiconductor substrate upside down to bond the bottom connection structure with the IC backplane, and then removing the semiconductor substrate; Step 7. Forming a top contact and a top conductive layer on the second epitaxial layer.

[0055]

[0055] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 3, in the re-growth process, the temperature is 400°C to 1000°C and the re-growth time is 5 seconds to 1000 seconds.

[0056]

[0056] In another aspect of some exemplary embodiments, the present disclosure provides a micro LED panel including a micro LED structure array including at least one micro LED structure, the micro LED structure including: a mesa structure including, from bottom to top, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; a regrowth layer grown on at least a sidewall of the light emitting layer; and a dielectric layer formed between adjacent mesa structures of adjacent micro LED structures, wherein an upper end of the regrowth layer is further extruded into the dielectric layer.

[0057]

[0057] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a re-growth layer is grown on the sidewalls of the light emitting layer and on a portion of the second type of epitaxial layer.

[0058]

[0058] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0059]

[0059] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the inclination angle of the regrown layer on the sidewall of the light emitting layer is 30 degrees to 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer extruded into the dielectric layer is parallel to the bottom surface of the second type of epitaxial layer.

[0060]

[0060] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the regrown layer extruded into the dielectric layer connects to adjacent light emitting layers and adjacent second type epitaxial layers of adjacent micro LED structures.

[0061]

[0061] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0062]

[0062] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the re-grown layer is grown on the edge surfaces of the light emitting layer and not on the top and bottom surfaces of the light emitting layer.

[0063]

[0063] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes multiple pairs of quantum wells, and the regrown layers on the sidewalls of the light emitting layer are not parallel to the surfaces of each of the multiple pairs of quantum wells.

[0064]

[0064] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0065]

[0065] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional doping ions.

[0066]

[0066] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the re-grown layer is selected from at least one of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0067]

[0067] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second type of epitaxial layer is single crystalline.

[0068]

[0068] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0069]

[0069] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0070]

[0070] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0071]

[0071] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0072]

[0072] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the regrown layer is not conductive.

[0073]

[0073] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a dielectric layer is further formed between adjacent mesa structures and on the surface of the regrown layer.

[0074]

[0074] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc.

[0075]

[0075] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0076] In another aspect of some exemplary embodiments, the present disclosure provides a method for manufacturing a micro LED panel, including: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2, forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover the sidewall of the first type epitaxial layer and the sidewall of the light emitting layer; Step 4, depositing a first dielectric layer on the substrate between adjacent mesa structures, where the top of the first dielectric layer is not higher than the bottom of the light emitting layer, and then removing the first mask pattern; Step 5: forming a second mask pattern on the semiconductor substrate to cover at least a portion of the sidewall and top of the first type epitaxial layer, and forming a regrowth layer on the sidewall of the light emitting layer and on the top of the first dielectric layer by a regrowth process of epitaxial material; Step 6, removing the second mask pattern; Step 7, forming a second dielectric layer on the regrown layer and on the top and sidewalls of the first type of epitaxial layer, forming an opening in the second dielectric layer on the surface of the first type of epitaxial layer, and then forming a bottom contact in the opening; Step 8, forming a bottom connection structure in the opening; Step 9: turning the semiconductor substrate upside down to bond the first type epitaxial layer and the bottom connection structure with the IC backplane, and then removing the semiconductor substrate; Step 10. Forming a top contact and a top conductive layer on the second epitaxial layer.

[0077]

[0077] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 5, a regrowth process of epitaxial material includes growing an epitaxial layer on the sidewalls of the light-emitting layer and depositing epitaxial material on the surface of the mask pattern.

[0078]

[0078] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 5, the temperature in the re-growth process is 400°C to 1000°C, and the re-growth time is 5 seconds to 1000 seconds.

[0079]

[0079] In another aspect of some exemplary embodiments, the present disclosure provides a micro LED panel including a micro LED structure array including at least one micro LED structure, the micro LED structure including a mesa structure including, from bottom to top, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer, and a re-growth layer grown on the entire sidewall of the second type of epitaxial layer and on the entire sidewall of the light emitting layer.

[0080]

[0080] In some exemplary embodiments or any combination of the preceding exemplary embodiments, the micro LED panel further includes a dielectric layer formed between adjacent micro LED structures, and an upper end of the regrown layer is further extruded along an upper surface of the dielectric layer.

[0081]

[0081] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the regrown layer on the sidewalls of the light emitting layer is not parallel to the extension direction of the light emitting layer.

[0082]

[0082] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the inclination angle of the regrown layer on the sidewall of the light emitting layer is 30 degrees to 90 degrees with respect to the extension direction of the light emitting layer, and the regrown layer extruded along the dielectric layer is parallel to the top surface of the dielectric layer.

[0083]

[0083] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a regrown layer extruded along the top of the dielectric layer connects to the adjacent light emitting layer and the second type of epitaxial layer.

[0084]

[0084] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the diameter of the mesa structure is 3 μm or less.

[0085]

[0085] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top and bottom surfaces of the light emitting layer.

[0086]

[0086] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer includes multiple pairs of quantum wells, and the regrown layer on the sidewalls of the light emitting layer is not parallel to the surfaces of each of the multiple pairs of quantum wells.

[0087]

[0087] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the light emitting layer has a linear shape without any bends.

[0088]

[0088] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer having intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but does not have intentional doping ions.

[0089]

[0089] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the re-grown layer is selected from at least one of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN.

[0090]

[0090] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the regrown layer is single crystalline, the material of the first epitaxial layer is single crystalline, and the material of the second epitaxial layer is single crystalline.

[0091]

[0091] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the band gap of the regrown layer is larger than the band gap of the light emitting layer.

[0092]

[0092] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than the thickness of the light emitting layer.

[0093]

[0093] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the thickness of the re-grown layer is less than or equal to 100 nm.

[0094]

[0094] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the resistance of the regrown layer is higher than the resistance of the light emitting layer.

[0095]

[0095] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the regrown layer is not conductive.

[0096]

[0096] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, a dielectric layer is formed between adjacent micro LED structures and further formed on the surface of the re-grown layer.

[0097]

[0097] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc.

[0098]

[0098] In some exemplary embodiments of the micro LED panel or any combination of the preceding exemplary embodiments, the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

[0099]

[0099] In another aspect of some exemplary embodiments, the present disclosure provides a method for manufacturing a micro LED panel, including: Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2, forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to cover the first type epitaxial layer; Step 4, forming a regrowth layer on the sidewall of the light emitting layer and the sidewall of the second type epitaxial layer by a regrowth process of epitaxial material; Step 5: removing the mask pattern; Step 6, forming a bottom contact on a surface of the first type epitaxial layer and forming a dielectric layer on the regrown layer and on top and sidewalls of the first type epitaxial layer between adjacent mesa structures, the dielectric layer having an opening exposing a top of the bottom contact; Step 7, forming a bottom connection structure in the opening; Step 8: turning the semiconductor substrate upside down to bond the first type epitaxial layer and the bottom connection structure with the IC backplane, and then removing the semiconductor substrate; and Step 9. Forming a top contact and a top conductive layer on the second epitaxial layer.

[0100]

[0100] In some exemplary embodiments of the method for manufacturing a micro LED panel or any combination of the preceding exemplary embodiments, in step 4, a regrowth layer is further formed on the semiconductor substrate between adjacent mesa structures, and the temperature in the regrowth process is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds.

[0101]

[0101] The micro LED panel provided by the present disclosure can avoid non-radiative recombination on the sidewall of the micro LED structure. Moreover, compared with the conventional micro LED, the micro LED structure of the present disclosure has a highly directional emission without other reflective structures, thereby simplifying the micro LED structure and reducing the cost. Furthermore, the present disclosure can also suppress non-radiative recombination on the surface of the micro LED structure, thereby improving the image quality and enhancing the EQE of the pixel.

[0102]

[0102] It should be noted that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described herein are not all-inclusive, and many additional features and advantages will be apparent to those skilled in the art, especially in light of the drawings, the present specification, and the claims. Furthermore, it should be noted that the language used in this specification is primarily selected for readability and for explanatory purposes, and may not be selected to define or limit the content of the present invention.

[0103] BRIEF DESCRIPTION OF THE DRAWINGS

[0103] In order that the present disclosure may be more fully understood, a more particular description may be had by reference to the features of the various embodiments, some of which are illustrated in the accompanying drawings, which are merely illustrative of the relevant features of the present disclosure and therefore should not be considered limiting, as the present description may admit of other useful features.

[0104]

[0104] For convenience, "up" is used to mean away from the substrate of the light-emitting structure as shown, and "down" means toward the substrate, and other directional terms such as top, bottom, above, below, under, below, etc. are to be interpreted accordingly. [Brief description of the drawings]

[0105] [Figure 1]

[0105] FIG. 1 is a cross-sectional view of a micro LED structure according to some embodiments (eg, the first embodiment) of the present disclosure. [Diagram 2]

[0106] 2 illustrates steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (e.g., the first embodiment) of the present disclosure. [Diagram 3]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 4]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Diagram 5]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 6]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 7]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 8]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 9]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 10]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 11]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 12]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 13]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 14]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 15]

[0106] Steps of a method for manufacturing the micro LED structure of FIG. 1 according to some embodiments (eg, the first embodiment) of the present disclosure are shown. [Figure 16]

[0107] FIG. 2 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., the second embodiment) of the present disclosure. [Figure 17]

[0108] 17 illustrates steps of a method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (e.g., the second embodiment) of the present disclosure. [Figure 18]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Figure 19]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Figure 20]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Figure 21]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Figure 22]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Diagram 23]

[0108] A method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (eg, the second embodiment) of the present disclosure is shown. [Figure 24]

[0109] FIG. 1 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., the third embodiment) of the present disclosure. [Diagram 25]

[0110] 25 illustrates steps of a method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (e.g., the third embodiment) of the present disclosure. [Figure 26]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Figure 27]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Figure 28]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Figure 29]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 30]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 31]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 32]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 33]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 34]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 35]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Diagram 36]

[0110] A method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure is shown. [Figure 37]

[0111] FIG. 1 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (e.g., the fourth embodiment) of the present disclosure. [Figure 38]

[0112] 38 illustrates method steps for manufacturing the micro LED panel of FIG. 37. [Figure 39]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 40]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 41]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 42]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 43]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 44]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 45]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Diagram 46]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Figure 47]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. [Figure 48]

[0112] FIG. 37 shows steps of a method for manufacturing the micro LED panel. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0106]

[0113] According to common practice, the various features illustrated may not be drawn to scale. Accordingly, dimensions of various features may be arbitrarily increased or decreased for clarity. In addition, some of the drawings may not depict all of the components of a given system, method, or apparatus. Finally, like reference numerals are used throughout the specification and drawings to denote like features.

[0107] Detailed Description

[0114] Numerous details are described herein to provide a thorough understanding of the examples illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the claims are limited only by the features and aspects specifically recited in the claims. Moreover, well-known processes, components, and materials have not been described in exhaustive detail so as not to unnecessarily obscure relevant aspects of the implementations described herein.

[0108]

[0115] In order to solve the problems in the related art as discussed above, in some embodiments, a micro LED panel including a plurality of micro LED structures is disclosed in the present disclosure. The micro LED panel has a dimension of 1 cm or less. The micro LED structure is formed by an array of micro LED panels, and the micro LED panel has a diameter of 720 mm. * 480, 640 * 480, 1920 * 1080, 1280 * 720, 2k, or 4k etc. The diameter of the micro LED structure is at the nanometer level, such as 20nm to 100nm.

[0109]

[0116] FIG. 1 is a cross-sectional view of a micro LED structure according to some embodiments of the present invention. Referring to FIG. 1, the micro LED structure is formed by, from the bottom up, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The first type and the second type are of different conductivity types, for example, the first type is P-type and the second type is N-type. In another example, the first type is N-type while the second type is P-type. In some embodiments, the material of the first type of epitaxial layer 01 is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof. and the material of the second type of epitaxial layer 03 can be one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, or any combination thereof.

[0110]

[0117] In some embodiments, the light emitting layer 03 is formed by multiple pairs of quantum well layers. The material of the quantum well layers can be one of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, etc. In addition, the thickness of the first type of epitaxial layer 01 is greater than the thickness of the second type of epitaxial layer 02, and the thickness of the light emitting layer 03 is less than the thickness of the first type of epitaxial layer 01. Preferably, the thickness of the first type of epitaxial layer 01 is 700 nm to 2 μm, and the thickness of the second type of epitaxial layer 02 is 100 nm to 200 nm. Preferably, the thickness of a single quantum well layer is 30 nm or less. In some examples, the light emitting layer 03 includes three or less pairs of quantum well layers.

[0111]

[0118] In some embodiments, the first type epitaxial layer 01 may have multiple stacked first type epitaxial underlayers and the second type epitaxial layer 02 may have multiple stacked second type epitaxial underlayers. For example, to prevent damage to the quantum well layer, the top layer of the first type epitaxial underlayer is a P-cap layer connected to the bottom of the light emitting layer 03 and the bottom layer of the second type epitaxial underlayer is an N-cap layer connected to the top of the light emitting layer 03.

[0112]

[0119] Furthermore, the first type epitaxial layer 01 includes one or more reflective mirror layers 011 (not shown in FIG. 1). The reflective mirror layer 011 can be formed on the bottom surface of the first type epitaxial layer 01 or can be formed inside the first type epitaxial layer 01. The material of the reflective mirror layer is a combination of a dielectric material and a metallic material. Furthermore, the dielectric material is SiO2 or SiNx, where x is a positive integer, and the metallic material is preferably Au or Ag. It is noted that the multiple reflective mirror layers 011 are horizontally formed at different horizontal levels one by one in the first type epitaxial layer 01, thereby dividing the first type epitaxial layer 01 into multiple layers.

[0113]

[0120] In some embodiments, a top contact 09 is formed on the top surface of the second type of epitaxial layer 02. The conductivity type of the top contact 09 is the same as the conductivity type of the second type of epitaxial layer 02, such as the second type being n-type and the top contact 09 being an n-type top contact, or the second type being p-type and the top contact 09 being a p-type top contact. In some embodiments, the top contact 09 is made of a metal or metal alloy, such as AuGe, AuGeNi, etc. The top contact 09 is used to form an ohmic contact between the top conductive layer 08 and the second type of epitaxial layer 02 to optimize the electrical properties of the micro-LED. The diameter of the top contact 09 is about 20 nm to 50 nm, and the thickness of the top contact 09 is about 10 nm to 20 nm. In some embodiments, the top conductive layer 08 is transparent and conductive, such as indium tin oxide (ITO), fluorine doped tin oxide (FTO), etc.

[0114]

[0121] In some embodiments, the bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 01. The conductivity type of the bottom contact 06 is the same as the conductivity type of the first type epitaxial layer 01, such as the first type epitaxial layer 01 being P-type and the bottom contact 06 also being P-type. Furthermore, since the LED mesa structure consisting of or including the first type epitaxial layer 01, the second type epitaxial layer 02, and the light emitting layer 03 emits light upwards or downwards, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, so that the top contact 09 is also as a point on the top surface of the second type epitaxial layer 02. For example, the width of the top contact 09 is less than 1 / 5, 1 / 6, 1 / 10, or 1 / 20 of the width of the second type epitaxial layer 02. In some embodiments, the diameter of the bottom contact 06 may be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is used to connect with a bottom electrode such as a conductor pad in an IC backplane. Furthermore, the diameter of the bottom connection structure 07 is 20 nm to 1 μm. Preferably, the diameter of the bottom connection structure 07 is 800 nm to 1 μm. Furthermore, the center of the bottom contact 06 is aligned with the center of the top contact 09 in the vertical direction. In some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is a transparent conductive material such as ITO or FTO. Additionally, in some embodiments, the material of the bottom contact 06 and the bottom connection structure 07 is not transparent. The material of the bottom contact 06 and the bottom connection structure 07 may be a conductive metal. Preferably, the material of the bottom contact 06 may be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 can be selected from at least one of Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0115]

[0122] 1, the center of the bottom contact 06 is vertically aligned with the center of the first type epitaxial layer 01. However, in other embodiments, the center of the bottom contact 06 is not vertically aligned with the center of the first type epitaxial layer 01.

[0116]

[0123] In some embodiments, to avoid surface carrier losses and non-radiative recombination at the sidewalls of the mesa structure, a re-growth layer 04 is formed on the sidewalls of the light emitting layer 03 by a regrowth process on the sidewalls of the first type of epitaxial layer 01 and even on the sidewalls of the second type of epitaxial layer 02. For example, the re-growth layer can be grown on a part of the sidewall of the light emitting layer 03 or on the entire sidewall of the light emitting layer. "Entirely" means a substantial part or the entirety. Furthermore, the re-growth layer 04 can be further formed on a part of the first type of epitaxial layer 01 or on the entire sidewall of the first type of epitaxial layer 01 and / or on a part of the second type of epitaxial layer 02 or on the entire sidewall of the second type of epitaxial layer 02.

[0117]

[0124] As shown in FIG. 1, the regrown layer 04 on the sidewall of the light-emitting layer 03 is not parallel to the horizontal direction in which the light-emitting layer 03 extends. Furthermore, the light-emitting layer 03 includes a top surface, an edge surface, and a bottom surface, and the regrown layer 04 grows only on the edge surface of the light-emitting layer 03, but not on the top and bottom surfaces of the light-emitting layer 03. Preferably, the inclination angle of the regrown layer 04 on the sidewall of the light-emitting layer is 30° to 90° with respect to the horizontal direction of the light-emitting layer 03. That is, the regrown layer 04 grows on the edge surface of the light-emitting layer 03, but not on the top and bottom of the light-emitting layer 03. In addition, the light-emitting layer 03 includes multiple pairs of quantum wells, and the regrown layer 04 is not parallel to each surface of the multiple pairs of quantum wells. Here, the light-emitting layer 03 is a straight line without any bend. Preferably, the diameter of the mesa structure is 3 μm or less.

[0118]

[0125] Here, the material of the regrown layer 04 with intrinsic doping ions is the same as the material of the first type of epitaxial layer 01 and / or the material of the second type of epitaxial layer 02, but without intentional extrinsic doping ions. For example, if the materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02 are the same, but the intentional ion doping levels of the materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02 are different, the material of the regrown layer 04 may be the same as the underlying materials of the first type of epitaxial layer 01 and the second type of epitaxial layer 02, but without intentional extrinsic doping ions. In another example, if the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are not the same and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regrown layer 04 may be the same as the material of the first type epitaxial layer 01 or the second type epitaxial layer 02 but without the intentional extrinsic doping ions. The light emitting layer is the active region of the PN junction formed by the first type epitaxial layer 01 and the second type epitaxial layer 02, and can be considered as being composed of two materials, the first type epitaxial layer 01 and the second type epitaxial layer 02. In some embodiments, the portion of the material of the regrown layer overlying the first type of epitaxial layer 01 is the same as the underlying first type of epitaxial layer 01, but without the extrinsic intentional doping of the first type of epitaxial layer 01, and the portion of the material of the regrown layer overlying the second type of epitaxial layer 02 is the same as the underlying second type of epitaxial layer 02, but without the extrinsic intentional doping of the second type of epitaxial layer 02. In some embodiments, the regrown layer 04 may have some intrinsic doping level or no doping level. In some embodiments, the material growth parameters such as ambient / gas pressure, power, and materials for the re-growth process are the same or similar to those of the first type of epitaxial layer 01 and / or the second type of epitaxial layer 02.The material of the regrown layer 04 must be lattice-matched to the light emitting layer 03, the first type of epitaxial layer 01, and / or the second type of epitaxial layer 02. Preferably, the material of the regrown layer 04 is monocrystalline, the material of the first epitaxial layer 01 is monocrystalline, and the material of the second epitaxial layer 02 is monocrystalline. Furthermore, the material of the regrown layer 04 is selected from one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, etc., or any combination thereof, preferably one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, or any combination thereof. In another embodiment, the material of the regrown layer 04 does not have intentional doping ions and is not the same as the material of the first type of epitaxial layer or the material of the second type of epitaxial layer 02 .

[0119]

[0126] The resistance of the regrown layer 04 is higher than the resistance of the light emitting layer 03, and the regrown layer 04 is not conductive, thereby ensuring the normal operation of the micro LED structure and preventing transport spreading outside the light emitting layer 03. Preferably, the band gap of the regrown layer 04 is larger than the band gap of the light emitting layer 03. Furthermore, the thickness of the regrown layer 04 is less than the thickness of the light emitting layer 03, and preferably the thickness of the regrown layer 04 is less than 10 nm or 100 nm. In another embodiment, the thickness of the regrown layer 04 is equal to or greater than the thickness of the light emitting layer 03.

[0120]

[0127] The details of the micro LED panel and the manufacturing method of the micro LED panel will be described below with reference to the drawings.

[0121]

[0128] EMBODIMENT 1

[0129] To solve the problems in the prior art, an embodiment of the present disclosure provides a micro LED panel.

[0122]

[0130] The micro LED panel includes an array of micro LED structures. Referring to FIG. 1, the micro LED structures in the micro LED panel include mesa structures including 01, 02, and 03, a re-grown layer 04, a top contact 09, a top conductive layer 08, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, and a dielectric layer 05 between adjacent mesa structures.

[0123]

[0131] The mesa structure includes, from bottom to top, a first type of epitaxial layer 01, a light emitting layer 02, and a second type of epitaxial layer 03. A regrown layer 04 is grown on the entire sidewall of the light emitting layer 03. In some embodiments, the regrown layer 04 can be grown on at least some or all of the sidewall of the second type of epitaxial layer 02 and on the entire sidewall of the light emitting layer 03. Furthermore, the regrown layer 04 is very thin, such as 5 nm or less, such that in some embodiments the regrown layer 04 is transparent.

[0124]

[0132] A dielectric layer 05 is formed between adjacent mesa structures and on the surface of the regrown layer 04 .

[0125]

[0133] A dielectric layer 05 is further formed at the bottom of the mesa structure. Here, a bottom contact 06 is formed at the bottom of the first type epitaxial layer 01, and a bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is connected to an IC backplane 00. The IC backplane 00 controls the turning on or off of each micro LED separately, and controls the gray value of each micro LED separately. The IC backplane 00 is a conventional IC backplane and will not be described in detail herein. Preferably, the dielectric layer 05 can be transparent. The material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc., or any combination thereof. In addition, in some embodiments, the material of the dielectric layer 05 is transparent.

[0126]

[0134] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel of this embodiment. In other embodiments, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0127]

[0135] In some embodiments, a method for manufacturing the aforementioned micro LED panel comprises the steps of:

[0128]

[0136] 2-15 show steps of a method for fabricating the micro LED structure of FIG. 1 according to some embodiments (eg, embodiment 1) of the present disclosure.

[0129]

[0137] Referring to FIG. 2, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure.

[0130]

[0138] Here, the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc. The epitaxial structure is grown on the substrate 00'.

[0131]

[0139] Referring to FIG. 3, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0132]

[0140] Here, the epitaxial structure is etched from the top down by a conventional plasma etching process.

[0133]

[0141] Referring to FIG. 4, step 3 includes forming mask patterns R1, R2 on the semiconductor substrate 00' to expose the sidewalls of the light emitting layer 03.

[0134]

[0142] Here, the mask pattern includes a first mask pattern R1 covering the sidewalls and top of the first type epitaxial layer 01, and a second mask pattern R2 covering at least a part of the sidewalls of the semiconductor substrate 00' and the second epitaxial layer 02. The first mask pattern R1 and the second mask pattern R2 can be formed by controlling the exposure time in an exposure process. In some embodiments, the material of the first mask pattern R1 and the second mask pattern R2 is photoresist, and R1 and R2 are formed by a photolithography method. In another embodiment, the material of the first mask pattern R1 and the second mask pattern R2 can be another material, such as a dielectric material.

[0135]

[0143] Referring to FIG. 5, step 4 involves forming a regrowth layer 04 on the sidewalls of the light emitting layer 03 by a regrowth process of epitaxial material.

[0136]

[0144] Here, a regrowth layer 04 is grown on the sidewalls of the light emitting layer 03 and a layer of epitaxial material is deposited on the surface of the first mask pattern R1 and / or the second mask pattern R2. In this regrowth process, the temperature is between 400° C. and 1000° C. and the regrowth time is between 5 and 1000 seconds. The material of the regrowth process is the same as the material of the first type of epitaxial layer 01 and / or the material of the second type of epitaxial layer 02, but without intentional doping ions.

[0137]

[0145] In another embodiment, the bottom of the first mask pattern R1 is higher than the top of the light emitting layer 03, so that the regrown layer 04 is further formed on a part of the first type epitaxial layer 01. Thus, the position of the regrown layer 04 is determined by the bottom position of the first mask pattern R1.

[0138]

[0146] In yet another embodiment, the top of the second mask pattern R2 is lower than the bottom of the light emitting layer 03, so that the regrown layer 04 is further grown on at least a part of the second type of epitaxial layer 02. Thus, the position of the regrown layer 04 is further determined by the position of the top of the second mask pattern R2.

[0139]

[0147] Referring to FIG. 6, step 5 involves removing the mask patterns R1 and R2.

[0140]

[0148] Here, the first mask pattern R1 is removed by a conventional chemical etching process, the second mask pattern R2 cannot be etched in chemicals as it is covered by the regrown layer 04.

[0141]

[0149] 7, step 6 includes depositing a first dielectric layer 05' on the semiconductor substrate 00', and, referring to FIG 8, step 6 also includes forming an opening in the first dielectric layer 05' on the surface of the first type epitaxial layer 01. Step 6 further includes forming a bottom contact 06 in the opening.

[0142]

[0150] Here, a first dielectric layer 05' is first deposited on the regrown layer 04 by a chemical vapor deposition process. Then, an opening is formed in the first dielectric layer 05' above the first type epitaxial layer 01. Then, a bottom contact 06 is deposited in the opening and connected to the first type epitaxial layer 01.

[0143]

[0151] In some embodiments, step 6 includes the following steps: first, deposit an initial dielectric layer on the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. Then, planarize the top of the initial dielectric layer to the top of the first type epitaxial layer 01, and deposit a bottom contact 06 on the first type epitaxial layer 01. Then, deposit another dielectric layer on the initial dielectric layer and the sidewalls and top of the mesa structure to cover the bottom contact 06, forming a first dielectric layer 05'. Then, form an opening in the first dielectric layer 05' to expose the bottom contact 06.

[0144]

[0152] In another embodiment, the bottom contact 06 can be formed before depositing the regrown layer 04. The regrown layer 04 is then deposited. Next, a first dielectric layer 05' is formed on the regrown layer 04. Finally, an opening is formed in the first dielectric layer 05' to expose the bottom contact 06.

[0145]

[0153] Referring to FIG. 9, step 7 includes forming a bottom connection structure 07 in the opening.

[0146]

[0154] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional evaporation process.

[0147]

[0155] 10, step 8 includes bonding the bottom connection structure 07 to the IC backplane 00 after turning the semiconductor substrate 00' upside down. Then the semiconductor substrate 00' is removed.

[0148]

[0156] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0149]

[0157] 11, in step 9, the second mask pattern R2 is removed by chemical etching. Here, after the semiconductor substrate 00' is removed, the second mask pattern R2 is exposed to air, so that the second mask pattern R2 can be removed.

[0150]

[0158] Referring to FIG. 12, in step 10, the epitaxial material formed by the regrowth process on the first dielectric layer 05' is removed by a dry etching method.

[0151]

[0159] Referring to FIG. 13, in step 11, a second dielectric layer 05'' is formed on the first dielectric layer 05', and the top of the second dielectric layer 05'' is planarized by a chemical mechanical polishing process.

[0152]

[0160] 14-15, step 12 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0153]

[0161] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas, and then the mask is removed. Finally, a top conductive layer 08 is deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0154]

[0162] Referring to FIG. 1, the dielectric layer 05 in FIG. 1 is formed by a first dielectric layer 05' and a second dielectric layer 05''.

[0155]

[0163] EMBODIMENT 2

[0164] The micro LED panel of embodiment 2 includes a micro LED structure array. Figure 16 is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure.

[0156]

[0165] Referring to FIG. 16 , the micro LED structure in the micro LED panel includes a mesa structure, a succession of a second type epitaxial layer 02, a regrown layer 04, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0157]

[0166] The mesa structure in this embodiment includes, from the bottom up, a first type of epitaxial layer 01, a light emitting layer 03, but does not include a second type of epitaxial layer 02. The second type of epitaxial layer 02 is continuously formed on the entire micro LED panel. Furthermore, the second type of epitaxial layer 02 is continuously formed on the light emitting layer 03 and on the regrown layer 04.

[0158]

[0167] In some embodiments, the regrown layer 04 is like a ring surrounding the mesa structure. The regrown layer 04 is grown on the entire sidewall of the light emitting layer 03, and further the regrown layer 04 is completely filled between adjacent light emitting layers 03. That is, the regrown layer 04 is completely filled in the space between adjacent light emitting layers 03. In some embodiments, the regrown layer 04 can be formed on the entire sidewall of the light emitting layer 03 herein or on a portion of the sidewall of the light emitting layer 03. Preferably, the regrown layer 04 can be formed on the entire sidewall of the light emitting layer 03. Furthermore, the bottom of the regrown layer 04 is aligned with the bottom of the light emitting layer 03, and the top of the regrown layer 04 is aligned with the top of the light emitting layer 03. Furthermore, the top width of the regrown layer 04 is the same as the top space width between adjacent light emitting layers 03. Furthermore, the regrown layer 04 is very thin, such as 5 nm, so that in some embodiments the regrown layer 04 is transparent.

[0159]

[0168] In some embodiments, a dielectric layer 05 is formed at the bottom of the regrown layer 04 between adjacent mesa structures. Preferably, the material of the dielectric layer is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. The dielectric layer 05 is further formed at the bottom of the mesa structure. A bottom contact 06 is formed at the bottom of the mesa structure. A bottom connection structure 07 is formed in the dielectric layer 05 at the bottom of the bottom contact 06 and electrically connects to the first type epitaxial layer 01. Additionally, in some embodiments, the material of the dielectric layer 05 is transparent.

[0160]

[0169] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel. In other embodiments, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0161]

[0170] The manufacturing method of the aforementioned micro LED panel in this embodiment 2 includes the following steps:

[0162]

[0171] 17-23 show steps of a method for manufacturing the micro LED panel of FIG. 16 according to some embodiments (e.g., embodiment 2) of the present disclosure.

[0163]

[0172] Referring to FIG. 17, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure, which includes a first type epitaxial layer 01, a light emitting layer 03, and a second type epitaxial layer 02 in order from above.

[0164]

[0173] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0165]

[0174] Referring to FIG. 18, step 2 involves forming a mesa structure by patterning the first type epitaxial layer 01 and the light emitting layer 03.

[0166]

[0175] Here, the first type epitaxial layer 01 and the light emitting layer 03 are etched from top to bottom by a conventional plasma etching process.

[0167]

[0176] In some embodiments, in the etching process of step 2, once the second type epitaxial layer 02 is etched to a certain depth, a re-grown layer 04 may further be formed on a portion of the sidewall of the second type epitaxial layer 02. Thus, the position of the re-grown layer 04 is determined by the etching depth in this step 2.

[0168]

[0177] Referring to FIG. 19, step 3 involves forming a regrowth layer 04 on the entire sidewall of the light emitting layer 03 by a regrowth process of epitaxial material.

[0169]

[0178] Here, a re-growth layer 04 is grown on the sidewalls of the light emitting layer 03 and the top surface of the second type epitaxial layer 02 in FIG. 19, while a mask (not shown in FIG. 19) covers the sidewalls and top surface of the first type epitaxial layer 01. In this re-growth process, the temperature is 400° C. to 1000° C., and the re-growth time is 5 seconds to 1000 seconds. The material of the re-growth process is the same as the material of the first type epitaxial layer 01 and / or the material of the second type epitaxial layer 02, but without intentional doping ions.

[0170]

[0179] Referring to FIG. 20, step 4 includes forming a dielectric layer 05 on the regrown layer 04, forming an opening in the dielectric layer 05 on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening on the surface of the first type epitaxial layer 01.

[0171]

[0180] Here, a dielectric layer 05 is first deposited on the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. An opening is then formed in the dielectric layer 05 on the first type epitaxial layer 01. A bottom contact 06 is then formed in the opening and connected to the first type epitaxial layer 01.

[0172]

[0181] In some embodiments, step 4 includes the following steps: first, deposit an initial dielectric layer 05-01 (not shown) on the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. Then, planarize the top of the initial dielectric layer 05-01 to the top of the first type epitaxial layer 01, and deposit a bottom contact 06 on the first type epitaxial layer 01. Then, deposit another dielectric layer 05-02 (not shown) on the initial dielectric layer and the sidewalls and top of the mesa structure, covering the bottom contact 06, to form a completed dielectric layer 05. Then, form an opening in the dielectric layer 05 to expose the bottom contact 06.

[0173]

[0182] Referring to FIG. 21, step 5 includes forming a bottom connection structure 07 in the opening.

[0174]

[0183] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional evaporation process.

[0175]

[0184] Referring to FIG. 22, step 6 includes turning the semiconductor substrate 00' upside down to bond the bottom connecting structure 07 to the IC backplane 00, and then removing the semiconductor substrate 00'.

[0176]

[0185] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down. Then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00 is removed by a conventional removal process such as laser lift-off.

[0177]

[0186] Referring to FIG. 23, step 7 involves forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0178]

[0187] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas. A top conductive layer 08 is then deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0179]

[0188] EMBODIMENT 3

[0189] The micro LED panel of embodiment 3 includes a micro LED structure array. Figure 24 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (such as embodiment 3) of the present disclosure.

[0180]

[0190] 24, a micro LED structure in a micro LED panel includes a mesa structure, a re-grown layer 04, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08. A dielectric layer 05 is formed between adjacent mesa structures.

[0181]

[0191] The mesa structure is composed of or includes, from the bottom up, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The regrown layer 04 grows on at least the sidewalls of the light emitting layer 03. In yet another embodiment, the regrown layer 04 grows on the entire sidewalls of the light emitting layer 03 and at least a part of the second type of epitaxial layer 02. The top end of the regrown layer 04 is further extruded into the dielectric layer 05. The part of the regrown layer 04 extruded into the dielectric layer 05 is parallel to the bottom surface of the second type of epitaxial layer 02. In addition, the top end of the regrown layer 04 extruded into the dielectric layer 05 is connected to the adjacent light emitting layer 03 and the adjacent second type of epitaxial layer 02. Furthermore, the regrown layer 04 is very thin, such as 5 nm, less than 10 nm, so that in some embodiments the regrown layer 04 is transparent.

[0182]

[0192] Further, a dielectric layer 05 is formed on the surface of the regrown layer 04 between adjacent mesa structures. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. The dielectric layer 05 is further formed at the bottom of the mesa structure. An opening is formed in the dielectric layer 05. A bottom contact 06 is formed in the opening at the bottom of the first type of epitaxial layer 01. A bottom connection structure 07 is formed in the opening and at the bottom of the first type of epitaxial layer 01. Additionally, in some embodiments, the material of the dielectric layer 05 is transparent.

[0183]

[0193] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel. In other embodiments, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0184]

[0194] The manufacturing method of the aforementioned micro LED panel in this embodiment 3 includes the following steps:

[0185]

[0195] 25-36 show steps of a method for manufacturing the micro LED panel of FIG. 24 according to some embodiments (eg, the third embodiment) of the present disclosure.

[0186]

[0196] Referring to FIG. 25, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure.

[0187]

[0197] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0188]

[0198] Referring to FIG. 26, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0189]

[0199] Here, the epitaxial structure is etched from the top down by a conventional plasma etching process.

[0190]

[0200] Referring to FIG. 27, step 3 includes forming a first mask pattern R1 on the semiconductor substrate 00' to cover the sidewalls of the first type epitaxial layer 01 and the light emitting layer 03.

[0191]

[0201] Here, a first mask pattern R1 is formed by photolithography to cover the sidewall of the light emitting layer 03 and the sidewall and top of the first type epitaxial layer 01. The material of the first mask pattern R1 is photoresist. In another embodiment, the material of the first mask pattern R1 can be another material, such as a dielectric material.

[0192]

[0202] Referring to FIG. 28, step 4 includes forming a first mask pattern R1 and depositing a first dielectric layer 05′ on the substrate between adjacent mesa structures;

[0193]

[0203] Now, under the protection of the first mask pattern R1, a first dielectric layer 05' is deposited on the semiconductor substrate 00' and on the surface of the first mask pattern R1 by a conventional deposition process. The top of the first dielectric layer 05' is aligned with the bottom of the light emitting layer 03.

[0194]

[0204] The first mask pattern R1 is then removed by conventional chemical etching methods after depositing the first dielectric layer 05'.

[0195]

[0205] Referring to FIG. 29, step 5 includes forming a second mask pattern R2 on the semiconductor substrate 00' to cover the sidewalls of the first type epitaxial layer 01, and forming a regrowth layer 04 on the sidewalls of the light emitting layer 03 and on the top of the first dielectric layer 05' by a regrowth process of epitaxial material.

[0196]

[0206] Here, a second mask pattern R2 is first formed to cover the sidewall of the first type epitaxial layer 01. Then, a re-growth layer 04 is grown on the sidewall of the light emitting layer 03 and deposited on the first dielectric layer 01. In this re-growth process, the temperature is 400°C to 1000°C and the re-growth time is 5 seconds to 1000 seconds. The material of the re-growth process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentional doping ions.

[0197]

[0207] In another embodiment, referring to Fig. 30, the bottom of the first mask pattern R1 is lower than the bottom of the light emitting layer 03, so that the top of the first dielectric layer 01 is lower than the bottom of the light emitting layer 03, and a regrown layer 04 is further formed on at least a part of the sidewall of the second type epitaxial layer 02. Thus, the top position of the first dielectric layer 05' is determined by the bottom position of the first mask pattern R1, and the position of the regrown layer 04 is determined by the top position of the first dielectric layer 05'.

[0198]

[0208] In some embodiments, when the bottom of the second mask pattern R2 is higher than the top of the light emitting layer 03, a regrown layer 04 is further formed on a part of the sidewall of the first type epitaxial layer 01. Thus, the position of the regrown layer 04 is further determined by the bottom position of the second mask pattern R2.

[0199]

[0209] Referring to FIG. 31, step 6 includes removing the second mask pattern R2.

[0200]

[0210] Here, the second mask pattern R2 is removed by a conventional chemical etching process.

[0201]

[0211] 32 and 33, step 7 includes forming a second dielectric layer on the regrown layer 04 and the top and sidewalls of the first type of epitaxial layer 01, and forming an opening in the second dielectric layer on the surface of the first type of epitaxial layer 01. A bottom contact 06 is formed in the opening.

[0202]

[0212] Here, step 7 includes the following steps: first, deposit an initial dielectric layer 0502 on the regrown layer 04 and on the sidewalls and top of the first type epitaxial layer 01. Then, the top of the initial dielectric layer 0502 is planarized to match the top of the first type epitaxial layer 01, see FIG. 33, and a bottom contact 06 is deposited on the first type epitaxial layer 01. Then, another dielectric layer 0503 is deposited on the initial dielectric layer 0502 and on the sidewalls and top of the mesa structure, covering the bottom contact 06 to form a second dielectric layer. Then, an opening is formed in the dielectric layer 0503 to expose the bottom contact 06. The second dielectric layer is formed by the initial dielectric layer 0502 and another dielectric layer 0503.

[0203]

[0213] In some embodiments, the second dielectric layer comprises a single dielectric layer as a combination of 0502 and 0503. The second dielectric layer is deposited by a conventional chemical vapor deposition process on the surface of the regrown layer 04, on the sidewalls and top of the first type epitaxial layer 01, and on the top of the first dielectric layer 05'. An opening is then formed in the second dielectric layer on top of the first type epitaxial layer 01. A bottom contact 06 is then deposited in the opening and connected to the first type epitaxial layer 01.

[0204]

[0214] Referring to FIG. 34, step 8 includes forming a bottom connection structure 07 in the opening.

[0205]

[0215] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional evaporation process.

[0206]

[0216] Referring to FIG. 35, step 9 includes bonding the first type epitaxial layer 01 and the bottom connecting structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0207]

[0217] Here, the semiconductor substrate 00' with epitaxial structure is first turned upside down, and then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off method.

[0208]

[0218] Referring to FIG. 36, step 10 includes forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02 .

[0209]

[0219] Here, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas. A top conductive layer 08 is then deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0210]

[0220] EMBODIMENT 4

[0221] The micro LED panel of embodiment 4 includes a micro LED structure array. Figure 37 is a cross-sectional structural diagram of a micro LED panel according to some embodiments (such as embodiment 4) of the present disclosure.

[0211]

[0222] Referring to Fig. 37, the micro LED structure in the micro LED panel includes a mesa structure, a regrowth layer 04, a bottom contact 06, a bottom connecting structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08. Furthermore, a dielectric layer 05 is formed between adjacent mesa structures, where the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2, etc. In another embodiment, the regrowth layer 04 is filled like a ring surrounding the mesa structure between the adjacent light emitting layer 03 and the second type epitaxial layer 02.

[0212]

[0223] The mesa structure is composed of or includes a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02, in that order from the bottom up. The regrown layer 04 grows on the entire sidewall of the second type of epitaxial layer 02 and on the entire sidewall of the light emitting layer 03. Here, the top end of the regrown layer 04 is further extruded along the top surface of the dielectric layer 05. The inclination angle of the part of the regrown layer 04 on the sidewall of the light emitting layer 03 is 30° to 90° with respect to the horizontal extension direction of the light emitting layer 03. The part of the regrown layer 04 extruded along the dielectric layer 05 is parallel to the top surface of the dielectric layer 05. In addition, the regrown layer 04 extruded along the top surface of the dielectric layer 05 is connected to the adjacent light emitting layer 03 and the second type of epitaxial layer 02. Furthermore, the regrown layer 04 is very thin, such as 5 nm or less, such as 10 nm, so that in some embodiments the regrown layer 04 is transparent. Additionally, in some embodiments the material of the dielectric layer 05 is transparent.

[0213]

[0224] Here, the top of the regrown layer 04 is aligned with the top of the second type of epitaxial layer 02 and the bottom of the regrown layer 04 is aligned with the bottom of the light emitting layer 03. An opening is formed in the dielectric layer 05. A bottom contact 06 is formed in the opening at the bottom of the first type of epitaxial layer 01. A bottom connection structure 07 is formed in the opening and at the bottom of the bottom contact 06. Furthermore, the bottom contact 06 and the bottom connection structure 07 are formed in the dielectric layer 05.

[0214]

[0225] Additionally, a top contact 09 and a top conductive layer 08 are formed on the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is formed continuously on the entire micro LED panel in this embodiment. In other embodiments, the top conductive layer 08 is formed on the top contact 09 and a portion of the top surface of the second type epitaxial layer 02.

[0215]

[0226] The manufacturing method of the above-mentioned micro LED panel in embodiment 4 includes the following steps:

[0216]

[0227] 38-48 show method steps for manufacturing the micro LED panel of FIG. 37.

[0217]

[0228] Referring to FIG. 38, step 1 includes providing a semiconductor substrate 00' having an epitaxial structure.

[0218]

[0229] Here, the epitaxial structure includes, from top to bottom, a first type of epitaxial layer 01, a light emitting layer 03, and a second type of epitaxial layer 02. The material of the semiconductor substrate 00' can be GaN, GaAs, etc., on which the epitaxial structure is grown.

[0219]

[0230] Referring to FIG. 39, step 2 involves forming a mesa structure by patterning the epitaxial structure.

[0220]

[0231] Here, the epitaxial structure is etched from the top down by a conventional plasma etching process.

[0221]

[0232] Referring to FIG. 40, step 3 includes forming a mask pattern R1 on the semiconductor substrate 00' to cover the first type epitaxial layer 01.

[0222]

[0233] Here, a mask pattern R1 is formed by photolithography to cover the sidewall and top of the first type epitaxial layer 01. The material of the mask pattern R1 is photoresist. In another embodiment, the material of the mask pattern R1 can be another material, such as a dielectric material.

[0223]

[0234] In another embodiment, the bottom of the mask pattern R1 is higher than the bottom of the first type epitaxial layer 01, so that the regrown layer 04 is further formed on a part of the first type epitaxial layer 01. Thus, the position of the regrown layer 04 is determined by the bottom position of the mask pattern R1.

[0224]

[0235] Referring to FIG. 41, step 4 involves forming a regrowth layer 04 on the sidewalls of the light emitting layer 03 and the sidewalls of the second type epitaxial layer 02 by a regrowth process of epitaxial material.

[0225]

[0236] Here, a regrowth layer 04 is grown on the sidewalls of the light emitting layer 03, on the sidewalls of the second epitaxial layer 02, and on the exposed top surface of the semiconductor substrate 00'. In this regrowth process, the temperature is 400°C to 1000°C, and the regrowth time is 5 seconds to 1000 seconds. The materials of the regrowth process are the same as the materials of the first type of epitaxial layer and / or the materials of the second type of epitaxial layer, but without intentional doping ions.

[0226]

[0237] In another embodiment, another mask pattern (not shown) is formed on the exposed surface of the semiconductor substrate 00' and on a portion of the sidewalls of the second type of epitaxial layer 02. A regrown layer 04 is then formed on a portion of the sidewalls of the second type of epitaxial layer 02. Thus, the location of the regrown layer 04 is further determined by another mask pattern.

[0227]

[0238] 41 and 42, step 5 includes removing the mask pattern R1.

[0228]

[0239] Here, the mask pattern R1 is removed by a conventional chemical etching process.

[0229]

[0240] 43 and 44, step 6 includes forming a bottom contact 06 on a surface of the first type epitaxial layer 01, and forming a dielectric layer 05 on the regrown layer 04 between adjacent mesa structures and on the top and sidewalls of the first type epitaxial layer 01, the dielectric layer 05 having an opening exposing the top of the bottom contact 06.

[0230]

[0241] Now referring to Figure 43, step 6 includes forming a bottom contact 06 on the surface of the first type epitaxial layer, and then a dielectric layer 05 is deposited by a conventional chemical vapor deposition process on the surface of the regrown layer 04, on the sidewalls and top of the first type epitaxial layer 01, and on top of the bottom contact 06. Then referring to Figure 44, a dry etching process is used to form an opening in the dielectric layer 05 on top of the first type epitaxial layer 01 to expose the bottom contact 06.

[0231]

[0242] In some embodiments, step 6 includes the following steps: first, deposit an initial dielectric layer on the regrown layer and on the sidewalls and top of the first type epitaxial layer; then, planarize the top of the initial dielectric layer to match the top of the first type epitaxial layer, and deposit a bottom contact on the first type epitaxial layer; then, deposit another dielectric layer on the initial dielectric layer and the sidewalls and top of the mesa structure to cover the bottom contact, so as to form a first dielectric layer; then, form an opening in the first dielectric layer to expose the bottom contact; the dielectric layer is formed by the initial dielectric layer and another dielectric layer.

[0232]

[0243] Referring to FIG. 45, step 7 includes forming a bottom connection structure 07 in the opening.

[0233]

[0244] Here, the material of the bottom connection structure 07 is deposited in the openings and on the bottom contacts 06 by a conventional evaporation process.

[0234]

[0245] Referring to FIG. 46, step 8 includes bonding the bottom connecting structure 07 with the IC backplane 00 by turning the semiconductor substrate 00' upside down, and then removing the semiconductor substrate 00'.

[0235]

[0246] Here, the semiconductor substrate 00' with the epitaxial structure is first turned upside down, and then the bottom connection structure 07 is bonded with the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00 is removed by a conventional removal process, such as a laser lift-off method.

[0236]

[0247] 47 and 48, step 9 includes forming a top contact 09 and a top conductive layer 08 on the second epitaxial layer 02.

[0237]

[0248] Now, see Fig. 47, a top contact 09 is deposited on top of the second type of epitaxial layer 02 while a mask protects other areas, and then the mask is removed. Finally, see Fig. 48, a top conductive layer 08 is deposited on the second epitaxial layer 02 by a conventional evaporation process.

[0238]

[0249] It will be understood by those skilled in the art that the microdisplay panel is not limited to the structures described above and may include more or fewer components than those shown, or some components may be combined, or different components may be utilized.

[0239]

[0250] It should be understood by those skilled in the art that all or part of the steps for implementing the above-mentioned embodiments may be implemented by hardware, or by a program instructing related hardware. The program may be stored in a flash memory, a conventional computer device, a central processing module, a control module, etc.

[0240]

[0251] The above description is merely an embodiment of the present disclosure, and the present disclosure is not limited to such an embodiment. Any modifications, equivalent replacements, and improvements made without departing from the concept and principle of the present disclosure shall fall within the protection scope of the present disclosure.

[0241]

[0252] Further embodiments include various subsets of the above-described embodiments, including those illustrated in Figures 1-48, which may be combined or rearranged in various other embodiments.

[0242]

[0253] Although the detailed description includes many specifics, they should not be interpreted as limiting the scope of the present invention, but merely as illustrating various examples and aspects of the present invention. It should be understood that the scope of the present invention includes other embodiments not discussed in detail above. For example, the above-described techniques can be applied to integrating functional devices other than LEDs and OLEDs with control circuits other than pixel drivers. Examples of non-LED devices include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuits include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0243]

[0254] The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variations thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the appended claims and the principles and novel features disclosed herein.

[0244]

[0255] Features of the present invention may be implemented by, using, or with the aid of a computer program product, such as a storage medium or computer-readable storage medium having stored thereon / in which instructions usable to program a processing system to perform any of the features described herein. The storage medium may include high-speed random access memory, such as, but not limited to, DRAM, SRAM, DDR RAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices. The memory optionally includes one or more storage devices located remotely from the CPU. The memory or non-volatile memory devices within the memory include non-transitory computer-readable storage media.

[0245]

[0256] Stored on any machine-readable medium, features of the present invention may be embodied in software and / or firmware for controlling the hardware of a processing system and for enabling the processing system to interact with other mechanisms utilizing the results of the present invention. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0246]

[0257] It will be understood that although terms such as "first," "second," etc. may be used herein to refer to various elements or steps, these elements or steps should not be limited by these terms, but are merely used to distinguish one element or step from another.

[0247]

[0258] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of the claims. When used in the description of the embodiments and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural unless the context clearly indicates otherwise. It will also be understood that the term "and / or" as used herein refers to and includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0248]

[0259] As used herein, the term "if" may be interpreted to mean "when" or "upon" or "in response to determining that" or "in response to detecting that" the stated antecedent condition is true, depending on the context. Similarly, the phrases "if it is determined" or "if" or "when the stated antecedent condition is true" may be interpreted to mean "upon determining" or "in response to determining" or "in accordance with a determination" or "upon detecting" or "in response to detecting" the stated antecedent condition is true, depending on the context.

[0249]

[0260] The above description has been set forth for purposes of illustration with respect to specific embodiments. However, the above illustrative discussion is not intended to be exhaustive or to limit the scope of the claims to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. The embodiments have been chosen and described in order to best explain the principles of operation and practical application, thereby enabling others skilled in the art to best utilize the invention and various embodiments.

Claims

1. 1. A micro LED panel having a micro LED array including at least one micro LED structure, the micro LED structure comprising: a mesa structure including, in order from the bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; a regrowth layer grown on at least a sidewall of the light emitting layer; A micro LED panel comprising:

2. 10. The micro LED panel of claim 1, wherein the re-grown layer is grown on the entire sidewalls of the light emitting layer and on a portion of the second type epitaxial layer.

3. 2. The micro LED panel according to claim 1, wherein the re-grown layer is not parallel to an extension direction of the light emitting layer.

4. 4. The micro LED panel according to claim 3, wherein the inclination angle of the re-grown layer with respect to the extending direction of the light emitting layer is between 30 degrees and 90 degrees.

5. 2. The micro LED panel of claim 1, wherein the mesa structure has a diameter of 3 μm or less.

6. 10. The micro LED panel of claim 1, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the re-grown layer is grown only on the edge surfaces of the light emitting layer and not on the top surface and the bottom surface of the light emitting layer.

7. 7. The micro LED panel of claim 6, wherein the light emitting layer comprises pairs of quantum wells, and the regrown layer is non-parallel to a surface of each of the pairs of quantum wells.

8. 7. The micro LED panel of claim 6, wherein the light emitting layer has a linear shape without any bends.

9. 2. The micro LED panel of claim 1, wherein the material of the re-grown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional doping ions.

10. 2. The micro LED panel of claim 1, wherein the material of the re-grown layer is at least one selected from the group consisting of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and InN.

11. 10. The micro LED panel of claim 1, wherein a material of the re-grown layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

12. 10. The micro LED panel of claim 1, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

13. 10. The micro LED panel of claim 1 , wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

14. 14. The micro LED panel of claim 13, wherein the re-grown layer has a thickness of 100 nm or less.

15. 10. The micro LED panel of claim 1, wherein the re-grown layer has a higher resistance than the light emitting layer.

16. 16. The micro LED panel of claim 15, wherein the re-grown layer is not electrically conductive.

17. 10. The micro LED panel of claim 1, wherein a dielectric layer is further formed between adjacent mesa structures and on a surface of the re-grown layer.

18. 20. The micro LED panel of claim 17, wherein a bottom connection structure is formed at a bottom of the mesa structure and electrically connected to the first type of epitaxial layer, and a top conductive layer is formed on the second type of epitaxial layer and electrically connected to the second type of epitaxial layer.

19. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 20. The micro LED panel of claim 17, wherein

20. 2. The micro LED panel of claim 1, wherein the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

21. Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to expose a sidewall of the light emitting layer; Step 4, forming a regrowth layer on the sidewalls of the light emitting layer by a regrowth process of epitaxial material; Step 5: removing the mask pattern; Step 6, depositing a dielectric layer on the regrown layer and forming an opening in the dielectric layer on a surface of the first type epitaxial layer, and then forming a bottom contact in the opening; Step 7: forming a bottom connection structure in the opening; Step 8: turning the semiconductor substrate upside down to bond the bottom connection structure with an IC backplane, and then removing the semiconductor substrate; and Step 9. Forming a top contact and a top conductive layer on the second type epitaxial layer. A method for manufacturing the micro LED panel of claim 1, comprising:

22. 22. The method of claim 21, wherein in step 3, the mask patterns include a first mask pattern covering the first type epitaxial layer and a second mask pattern covering the semiconductor substrate and sidewalls of the second epitaxial layer.

23. 23. The method of claim 22, wherein in step 4, the regrowth process of the epitaxial material includes growing the regrowth layer on the sidewalls of the light emitting layer and depositing epitaxial material on the surfaces of the first mask pattern and the second mask pattern.

24. 24. The method of claim 23, wherein step 8 further comprises removing the epitaxial material on the second mask pattern by etching the epitaxial material.

25. 22. The method of claim 21, wherein in step 4, the temperature in the regrowth process is 400° C. to 1000° C., and the regrowth time is 5 seconds to 1000 seconds.

26. 23. The method of claim 22, wherein the top conductive layer is formed continuously over an entire area of ​​the micro LED panel.

27. 1. A micro LED panel comprising an array of micro LED structures comprising at least two micro LED structures, each of said micro LED structures comprising: a mesa structure including a first type epitaxial layer and a light emitting layer in this order from below; a second type of epitaxial layer formed successively on the light emitting layer and on the re-grown layer, the second type of epitaxial layer being formed successively on an entire area of ​​the micro LED panel; a regrowth layer grown on the entire sidewall of the light emitting layer and completely filling between adjacent light emitting layers of adjacent micro LED structures; A micro LED panel comprising:

28. 28. The micro LED panel of claim 27, wherein a bottom width of the re-grown layer is the same as a space width between adjacent light emitting layers.

29. 30. The micro LED panel of claim 27, further comprising a dielectric layer formed on a bottom of the re-grown layer between adjacent mesa structures of the adjacent micro LED structures.

30. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 30. The micro LED panel of claim 29, wherein

31. 30. The micro LED panel of claim 29, further comprising a bottom connection structure formed in the dielectric layer below and electrically connected to the first type epitaxial layer.

32. 28. The micro LED panel of claim 27, wherein the mesa structure has a diameter of 3 μm or less.

33. 30. The micro LED panel of claim 27, wherein the light emitting layer includes a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top surface and the bottom surface of the light emitting layer.

34. 30. The micro LED panel of claim 27, wherein the light emitting layer comprises pairs of quantum wells.

35. 28. The micro LED panel of claim 27, wherein the light emitting layer has a linear shape without any bends.

36. 28. The micro LED panel of claim 27, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional doping ions.

37. 37. The micro LED panel of claim 36, wherein the material of the re-grown layer is selected from at least one of GaP, AlP, and GaAs.

38. 28. The micro LED panel of claim 27, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

39. 28. The micro LED panel of claim 27, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

40. 28. The micro LED panel of claim 27, wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

41. 41. The micro LED panel of claim 40, wherein the thickness of the re-grown layer is less than or equal to 100 nm.

42. 28. The micro LED panel of claim 27, wherein the regrown layer has a higher resistance than the light emitting layer.

43. 43. The micro LED panel of claim 42, wherein the re-grown layer is not conductive.

44. 28. The micro LED panel of claim 27, wherein the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

45. Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the first type epitaxial layer and the light emitting layer; Step 3: forming a regrowth layer on the entire sidewall of the light emitting layer by a regrowth process of epitaxial material; Step 4, forming a dielectric layer on the regrown layer, forming an opening in the dielectric layer on the first type epitaxial layer, and forming a bottom contact in the opening on the surface of the first type epitaxial layer; Step 5: forming a bottom connection structure in the opening; Step 6: turning the semiconductor substrate upside down to bond the bottom connection structure with an IC backplane, and then removing the semiconductor substrate; and Step 7. Forming a top contact and a top conductive layer on the second epitaxial layer.

28. A method for manufacturing a micro LED panel according to claim 27, comprising:

46. 46. ​​The method of claim 45, wherein in step 3, the temperature in the regrowth process is between 400° C. and 1000° C., and the regrowth time is between 5 seconds and 1000 seconds.

47. 1. A micro LED panel comprising an array of micro LED structures comprising at least one micro LED structure, the micro LED structure comprising: a mesa structure including, in order from the bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; a regrowth layer growing on at least a sidewall of the light emitting layer; a dielectric layer formed between adjacent mesa structures of adjacent micro LED structures, the top end of the regrown layer being extruded further into the dielectric layer; A micro LED panel comprising:

48. 48. The micro LED panel of claim 47, wherein the regrowth layer is grown on the sidewalls of the light emitting layer and on a portion of the second type epitaxial layer.

49. 48. The micro LED panel of claim 47, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

50. 48. The micro LED panel of claim 47, wherein a tilt angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to an extension direction of the light emitting layer, and the re-grown layer extruded into the dielectric layer is parallel to a bottom surface of the second type epitaxial layer.

51. 48. The micro LED panel of claim 47, wherein the re-grown layer extruded into the dielectric layer connects to adjacent light emitting layers and adjacent second type epitaxial layers of adjacent micro LED structures.

52. 48. The micro LED panel of claim 47, wherein the mesa structure has a diameter of 3 μm or less.

53. 48. The micro LED panel of claim 47, wherein the light emitting layer comprises a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top surface and the bottom surface of the light emitting layer.

54. 54. The micro LED panel of claim 53, wherein the light emitting layer comprises pairs of quantum wells, and the re-grown layers on the sidewalls of the light emitting layer are not parallel to a surface of each of the pairs of quantum wells.

55. 48. The micro LED panel of claim 47, wherein the light emitting layer has a linear shape without any bends.

56. 48. The micro LED panel of claim 47, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional doping ions.

57. 48. The micro LED panel of claim 47, wherein the material of the re-grown layer is selected from at least one of GaP, AlP, and GaAs.

58. 48. The micro LED panel of claim 47, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

59. 48. The micro LED panel of claim 47, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

60. 48. The micro LED panel of claim 47, wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

61. 61. The micro LED panel of claim 60, wherein the re-grown layer has a thickness of 100 nm or less.

62. 48. The micro LED panel of claim 47, wherein the regrown layer has a higher resistance than the light emitting layer.

63. 63. The micro LED panel of claim 62, wherein the re-grown layer is not conductive.

64. 48. The micro LED panel of claim 47, wherein the dielectric layer is further formed on a surface of the re-grown layer between the adjacent mesa structures.

65. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 48. The micro LED panel of claim 47, wherein

66. 48. The micro LED panel of claim 47, wherein the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

67. Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a first mask pattern on the semiconductor substrate to cover the sidewall of the first type epitaxial layer and the sidewall of the light emitting layer; Step 4: depositing a first dielectric layer on the substrate between the adjacent mesa structures, the top of the first dielectric layer being no higher than the bottom of the light emitting layer, and then removing the first mask pattern; Step 5. forming a second mask pattern on the semiconductor substrate to cover at least a portion of the sidewall and top of the first type epitaxial layer, and forming a regrowth layer on the sidewall of the light emitting layer and on the top of the first dielectric layer by a regrowth process of epitaxial material; Step 6: removing the second mask pattern; Step 7, forming a second dielectric layer on the regrown layer and on the top and sidewalls of the first type epitaxial layer, forming an opening in the second dielectric layer on a surface of the first type epitaxial layer, and then forming a bottom contact in the opening; Step 8: forming a bottom connection structure in the opening; Step 9: turning the semiconductor substrate upside down to bond the first type epitaxial layer and the bottom connection structure with an IC backplane, and then removing the semiconductor substrate; and Step 10. Forming a top contact and a top conductive layer on the second epitaxial layer.

48. A method for manufacturing a micro LED panel according to claim 47, comprising:

68. 68. The method of claim 67, wherein in step 5, the regrowth process of the epitaxial material includes growing the epitaxial layer on the sidewalls of the light emitting layer and depositing the epitaxial material on a surface of the mask pattern.

69. 68. The method of claim 67, wherein in step 5, the temperature in the regrowth process is between 400° C. and 1000° C., and the regrowth time is between 5 seconds and 1000 seconds.

70. 1. A micro LED panel comprising an array of micro LED structures comprising at least one micro LED structure, the micro LED structure comprising: a mesa structure including, in order from the bottom, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; a regrowth layer growing on the entire sidewall of the second type epitaxial layer and on the entire sidewall of the light emitting layer; A micro LED panel comprising:

71. 71. The micro LED panel of claim 70, further comprising a dielectric layer formed between adjacent micro LED structures, wherein a top edge of said re-grown layer is further extruded along a top surface of said dielectric layer.

72. 71. The micro LED panel of claim 70, wherein the re-grown layer on the sidewalls of the light emitting layer is not parallel to an extension direction of the light emitting layer.

73. 73. The micro LED panel of claim 72, wherein a slope angle of the re-grown layer on the sidewalls of the light emitting layer is between 30 degrees and 90 degrees with respect to an extension direction of the light emitting layer, and the re-grown layer extruded along the dielectric layer is parallel to a top surface of the dielectric layer.

74. 73. The micro LED panel of claim 72, wherein the re-grown layer extruded along a top of the dielectric layer connects to an adjacent light emitting layer and a second type of epitaxial layer.

75. 71. The micro LED panel of claim 70, wherein the mesa structure has a diameter of 3 μm or less.

76. 71. The micro LED panel of claim 70, wherein the light emitting layer comprises a top surface, an edge surface, and a bottom surface, and the regrowth layer is grown on the edge surfaces of the light emitting layer and is not grown on the top surface and the bottom surface of the light emitting layer.

77. 77. The micro LED panel of claim 76, wherein the light emitting layer comprises pairs of quantum wells, and the re-grown layers on the sidewalls of the light emitting layer are not parallel to a surface of each of the pairs of quantum wells.

78. 71. The micro LED panel of claim 70, wherein the light emitting layer has a linear shape without any bends.

79. 71. The micro LED panel of claim 70, wherein the material of the regrown layer with intrinsic doping ions is the same as the material of the first type of epitaxial layer and / or the material of the second type of epitaxial layer, but without intentional doping ions.

80. 80. The micro LED panel of claim 79, wherein the material of the re-grown layer is selected from at least one of GaP, AlP, and GaAs.

81. 71. The micro LED panel of claim 70, wherein a material of the regrowth layer is single crystalline, a material of the first epitaxial layer is single crystalline, and a material of the second epitaxial layer is single crystalline.

82. 71. The micro LED panel of claim 70, wherein the bandgap of the regrown layer is greater than the bandgap of the light emitting layer.

83. 71. The micro LED panel of claim 70, wherein the thickness of the re-grown layer is less than the thickness of the light emitting layer.

84. 84. The micro LED panel of claim 83, wherein said thickness of said regrowth layer is 10 nm or less.

85. 71. The micro LED panel of claim 70, wherein the regrown layer has a higher resistance than the light emitting layer.

86. 86. The micro LED panel of claim 85, wherein the re-grown layer is not conductive.

87. 71. The micro LED panel of claim 70, wherein a dielectric layer is formed between adjacent micro LED structures and further formed on a surface of the re-grown layer.

88. The material of the dielectric layer is SiO ２ , SiNx, Al ２ O ３ , AlN, HfO ２ , TiO ２ and / or ZrO ２ 88. The micro LED panel of claim 87, wherein

89. 71. The micro LED panel of claim 70, wherein the material of the first type of epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP and the material of the second type of epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and / or AlGaInP.

90. Step 1: providing a semiconductor substrate having an epitaxial structure, the epitaxial structure including, from above, a first type of epitaxial layer, a light emitting layer, and a second type of epitaxial layer; Step 2: forming a mesa structure by patterning the epitaxial structure; Step 3: forming a mask pattern on the semiconductor substrate to cover the first type epitaxial layer; Step 4, forming a regrowth layer on the sidewalls of the light emitting layer and the sidewalls of the second type epitaxial layer by a regrowth process of epitaxial material; Step 5: removing the mask pattern; Step 6. forming a bottom contact on a surface of the first type epitaxial layer and forming a dielectric layer on the regrown layer and on top and sidewalls of the first type epitaxial layer between adjacent mesa structures, the dielectric layer having an opening exposing a top of the bottom contact; Step 7: forming a bottom connection structure in the opening; Step 8: turning the semiconductor substrate upside down to bond the first type epitaxial layer and the bottom connection structure with an IC backplane, and then removing the semiconductor substrate; and Step 9. Forming a top contact and a top conductive layer on the second epitaxial layer.

71. A method for manufacturing a micro LED panel according to claim 70, comprising:

91. 91. The method of claim 90, wherein in step 4, the regrowth layer is further formed on the semiconductor substrate between the adjacent mesa structures, and the temperature in the regrowth process is from 400° C. to 1000° C., and the regrowth time is from 5 seconds to 1000 seconds.

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