Magnetic sensor

Abstract

To increase the number of magnetoresistance effect elements while suppressing deterioration in high-frequency noise characteristics and suppressing an increase in size.SOLUTION: The magnetic sensor 1 includes a plurality of MR elements 20 and a plurality of element rows 60. Each of the plurality of element trains 60 includes a plurality of MR elements 20. The plurality of device rows 60 are connected in parallel by the first terminals 11a and the second terminals 11b. Each of the plurality of device rows 60 includes a first partial 60a1, a second partial 60b, and a third partial 60a2. Each of the first partial 60a1 and the third partial 60a2 extends in the first direction. The second partial side 60b extends in the second direction. The number of MR elements 20 included in the first partial 60a1 and the third partial 60a2 varies from one row of elements 60 to another. The number of MR elements 20 included in the second portion 60b is the same regardless of the row of elements 60.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor including an element array including a plurality of magnetoresistive effect elements. [Background technology]

[0002] In recent years, magnetic sensors have been used in a variety of applications. A known magnetic sensor uses a spin-valve magnetoresistive element provided on a substrate. A spin-valve magnetoresistive element has a fixed magnetization layer with a fixed magnetization direction, a free layer with a magnetization direction that can change depending on the direction of an applied magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer.

[0003] Patent Document 1 discloses a magnetic sensor device having multiple TMR (tunnel magnetoresistance) elements connected in series by multiple upper and lower metal layers. The TMR elements have a free layer with a disk-shaped structure. A magnetization pattern with a closed magnetic flux, also known as a vortex state, is spontaneously formed in the free layer. In this magnetic sensor device, the multiple upper and lower metal layers are arranged so that the direction of current flowing through the path passing through the multiple serially connected TMR elements is the Y direction in some parts and the X direction in others. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2023 / 324477 Summary of the Invention [Problem to be solved by the invention]

[0005] In a magnetic sensor equipped with a magnetoresistive element including a free layer with a vortex structure as described in Patent Document 1, it is desirable to reduce the diameter of the magnetoresistive element in order to widen the range in which the magnetoresistive element linearly responds to changes in the target magnetic field. However, doing so poses problems such as a decrease in the sensitivity of the magnetoresistive element and an increase in noise contained in the detection signal generated by the magnetic sensor.

[0006] Increasing the number of magnetoresistive elements is an effective way to suppress noise. However, the resistance value of a magnetoresistive element increases as the diameter of the element decreases. Therefore, when magnetoresistive elements with small diameters are connected in series, Johnson noise increases, resulting in a problem of deterioration of high-frequency noise characteristics.

[0007] In general, the larger the number of magnetoresistive effect elements, the larger the magnetic sensor. As a result, the number of magnetic sensors that can be manufactured from one wafer decreases, and the cost of the magnetic sensor increases. Therefore, it is desirable to increase the number of magnetoresistive effect elements while preventing the magnetic sensor from becoming larger.

[0008] The present invention has been made in consideration of such problems, and its purpose is to provide a magnetic sensor that can increase the number of magnetoresistive effect elements while suppressing deterioration of high-frequency noise characteristics and preventing an increase in size. [Means for solving the problem]

[0009] The magnetic sensor of the present invention includes a plurality of magnetoresistive effect elements, a plurality of element arrays each including a plurality of magnetoresistive effect elements connected in series by wiring, a first terminal, and a second terminal. The plurality of element arrays are connected in parallel with each other via the first terminal and the second terminal. The plurality of magnetoresistive effect elements are arranged in a first direction and a second direction intersecting the first direction. Each of the plurality of element arrays includes a first portion, a second portion, and a third portion provided in this order from the first terminal side. Each of the first portion and the third portion extends in the first direction. The second portion extends in the second direction. The number of elements included in the first portion among the plurality of elements varies depending on the element array to which the first portion belongs. The number of elements included in the second portion among the plurality of elements is the same regardless of the element array to which the second portion belongs. The number of elements included in the third portion among the plurality of elements varies depending on the element row to which the third portion belongs among the plurality of element rows. [Effects of the Invention]

[0010] In the magnetic sensor of the present invention, the number of elements included in the first portion varies depending on the element row to which the first portion belongs, the number of elements included in the second portion is the same regardless of the element row to which the second portion belongs, and the number of elements included in the third portion varies depending on the element row to which the third portion belongs. This makes it possible to increase the number of magnetoresistive effect elements while suppressing deterioration of high-frequency characteristics and size increase. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view showing a magnetic sensor according to a first embodiment of the present invention. [Figure 2] 1 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a first embodiment of the present invention. [Figure 3] FIG. 2 is a plan view showing first to fourth resistor portions in the first embodiment of the present invention. [Figure 4]FIG. 2 is a plan view showing a first resistor portion in the first embodiment of the present invention. [Figure 5] FIG. 1 is a plan view showing an element array according to a first embodiment of the present invention. [Figure 6] 1 is a plan view showing a plurality of magnetoresistive effect elements, a plurality of lower electrodes, and a plurality of upper electrodes in a first embodiment of the present invention. [Figure 7] FIG. 2 is a side view showing a part of an element array in the first embodiment of the present invention. [Figure 8] FIG. 2 is a side view showing an inactive magnetoresistive effect element according to the first embodiment of the present invention. [Figure 9] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 10] FIG. 2 is a plan view showing a free layer of the magnetoresistive element according to the first embodiment of the present invention. [Figure 11] 2 is a plan view showing a free layer when a target magnetic field is applied to the magnetoresistive element according to the first embodiment of the present invention. FIG. [Figure 12] 2 is a plan view showing a free layer when a target magnetic field is applied to the magnetoresistive element according to the first embodiment of the present invention. FIG. [Figure 13] FIG. 10 is a plan view showing a first resistor portion in a first modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 14] FIG. 10 is a plan view showing a first resistor portion in a second modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 15] FIG. 10 is a plan view showing a first resistor portion in a third modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 16] FIG. 10 is a plan view showing a first resistor portion in a fourth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 17] FIG. 13 is a side view showing a part of an element array in a fifth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 18]FIG. 13 is a plan view showing a resistor portion and an electrode layer in a sixth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 19] FIG. 13 is a plan view showing a resistor portion and an electrode layer in a seventh modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 20] FIG. 6 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a second embodiment of the present invention. [Figure 21] FIG. 10 is a plan view showing first and second resistor portions according to a second embodiment of the present invention. [Figure 22] FIG. 10 is a plan view showing a magnetic sensor according to a third embodiment of the present invention. [Figure 23] FIG. 10 is a plan view showing a first resistor portion in a third embodiment of the present invention. [Figure 24] FIG. 11 is a plan view showing a first resistor portion in a modified example of the magnetic sensor according to the third embodiment of the present invention. [Figure 25] FIG. 10 is a plan view showing a magnetic sensor according to a fourth embodiment of the present invention. [Figure 26] FIG. 10 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a fourth embodiment of the present invention. [Figure 27] FIG. 10 is a plan view showing first and second sub-resistance portions in a fourth embodiment of the present invention. [Figure 28] FIG. 13 is a plan view showing a first sub-resistance portion of a first resistance portion in a fourth embodiment of the present invention. [Figure 29] FIG. 10 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a fifth embodiment of the present invention. [Figure 30] FIG. 13 is a plan view showing first and second resistor portions in a fifth embodiment of the present invention. [Figure 31] FIG. 10 is a plan view showing a magnetic sensor according to a sixth embodiment of the present invention. [Figure 32] FIG. 10 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a sixth embodiment of the present invention. [Figure 33] FIG. 20 is a plan view showing first to eighth resistor portions in a sixth embodiment of the present invention. [Figure 34] FIG. 13 is a cross-sectional view showing a magnetic sensor according to a seventh embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0012] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a schematic configuration of a magnetic sensor according to a first embodiment of the present invention will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a plan view showing a magnetic sensor 1 according to this embodiment. Fig. 2 is a circuit diagram showing a circuit configuration of the magnetic sensor 1 according to this embodiment.

[0013] The magnetic sensor 1 in this embodiment includes a plurality of magnetoresistive elements (hereinafter referred to as MR elements) 20. Each of the MR elements 20 is configured so that its resistance value changes in response to a target magnetic field, which is a magnetic field to be detected by the magnetic sensor 1. The MR elements 20 are shown in FIG. 3 and other figures, which will be described later.

[0014] The magnetic sensor 1 further includes a power supply terminal V1, a ground terminal G1, a first output terminal E11, a second output terminal E12, a first resistor unit R11, a second resistor unit R12, a third resistor unit R13, and a fourth resistor unit R14. The power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12 are each formed of an electrode layer made of a conductive material. Each of the first to fourth resistor units R11 to R14 includes a plurality of MR elements 20 from the plurality of MR elements 20.

[0015] As shown in FIG. 2, the first resistor element R11 is provided between the power supply terminal V1 and the first output terminal E11 in the circuit configuration. The second resistor element R12 is provided between the ground terminal G1 and the first output terminal E11 in the circuit configuration. The third resistor element R13 is provided between the ground terminal G1 and the second output terminal E12 in the circuit configuration. The fourth resistor element R14 is provided between the power supply terminal V1 and the second output terminal E12 in the circuit configuration. In this application, the expression "in the circuit configuration" is used to refer to the arrangement on a circuit diagram, not the arrangement in a physical configuration.

[0016] A voltage or current of a predetermined magnitude is applied to the power supply terminal V1, and the ground terminal G1 is connected to the ground.

[0017] The magnetic sensor 1 further includes diodes D1, D2, D3, and D4. The cathode of the diode D1 is connected to the power supply terminal V1. The cathode of the diode D2 is connected to the ground terminal G1. The cathode of the diode D3 is connected to the first output terminal E11. The cathode of the diode D4 is connected to the second output terminal E12. The anodes of the diodes D1, D2, D3, and D4 are connected to ground.

[0018] The magnetic sensor 1 further includes a substrate 5. The power supply terminal V1, the ground terminal G1, the first and second output terminals E11, E12, the first to fourth resistors R11 to R14, and the diodes D1 to D4 are provided on the substrate 5.

[0019] Here, the X direction, Y direction, and Z direction are defined as shown in FIG. 1. The X direction, Y direction, and Z direction are perpendicular to one another. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. In this embodiment, the direction perpendicular to the surface of the substrate 5 is defined as the Z direction.

[0020] In the following, a position further in the Z direction than the reference position will be referred to as "above," and a position on the opposite side of "above" than the reference position will be referred to as "below." Furthermore, with regard to the components of the magnetic sensor 1, the surface located at the end in the Z direction will be referred to as the "top surface," and the surface located at the end in the -Z direction will be referred to as the "bottom surface." Furthermore, the expression "when viewed from a specified direction (e.g., the Z direction)" means viewing an object from a position away from the specified direction or in one direction parallel to the specified direction.

[0021] 1 shows an example of the arrangement of the first to fourth resistor portions R11 to R14. The first resistor portion R11 and the third resistor portion R13 are positioned such that, when viewed from the Z direction, the first resistor portion R11 overlaps the third resistor portion R13 when rotated 180° about a predetermined point C1 on the substrate 5. The second resistor portion R12 and the fourth resistor portion R14 are positioned such that, when viewed from the Z direction, the second resistor portion R12 overlaps the fourth resistor portion R14 when rotated 180° about the predetermined point C1. The predetermined point C1 may be the center of gravity of the surface of the substrate 5 when viewed from the Z direction.

[0022] The second resistor R12 is arranged symmetrically with the first resistor R11 about the XZ plane including the predetermined point C1, and the fourth resistor R14 is arranged symmetrically with the third resistor R13 about the XZ plane including the predetermined point C1.

[0023] The power supply terminal V1 is located near the fourth resistor R14, near a corner located at the intersection of a side surface of the substrate 5 located at the end in the X direction and a side surface of the substrate 5 located at the end in the Y direction. The ground terminal G1 is located near the second resistor R12, near a corner located at the intersection of a side surface of the substrate 5 located at the end in the -X direction and a side surface of the substrate 5 located at the end in the -Y direction. The first output terminal E11 is located near the first resistor R11, near a corner located at the intersection of a side surface of the substrate 5 located at the end in the -X direction and a side surface of the substrate 5 located at the end in the Y direction. The second output terminal E12 is located near the third resistor R13, near a corner located at the intersection of a side surface of the substrate 5 located at the end in the X direction and a side surface of the substrate 5 located at the end in the -Y direction.

[0024] The arrangement of the power supply terminal V1, the ground terminal G1, the first output terminal E11, the second output terminal E12, and the first to fourth resistor units R11 to R14 is not limited to the example shown in Fig. 1. For example, the first to fourth resistor units R11 to R14 may be arranged in a predetermined order in a direction parallel to the X direction or in a direction parallel to the Y direction.

[0025] Next, the specific structure of the magnetic sensor 1 will be described in detail with reference to Fig. 1, Fig. 3, and Fig. 4. Fig. 3 is a plan view showing the first to fourth resistor sections R11 to R14. Fig. 4 is a plan view showing the first resistor section R11. In Fig. 3 and Fig. 4, multiple circles represent multiple MR elements 20.

[0026] Each of the first to fourth resistor sections R11 to R14 includes a plurality of element arrays 60, a first terminal, and a second terminal. Each of the element arrays 60 includes a wiring 40 and a plurality of MR elements 20 connected in series by the wiring 40 from among the plurality of MR elements 20.

[0027] In each of the first to fourth resistor sections R11 to R14, the element arrays 60 are connected in parallel to one another via first and second terminals. Hereinafter, the first and second terminals of the first resistor section R11 will be denoted by reference numerals 11a and 11b, respectively, the first and second terminals of the second resistor section R12 will be denoted by reference numerals 12a and 12b, respectively, the first and second terminals of the third resistor section R13 will be denoted by reference numerals 13a and 13b, respectively, and the first and second terminals of the fourth resistor section R14 will be denoted by reference numerals 14a and 14b, respectively.

[0028] The first terminal 11a of the first resistor element R11 and the first terminal 14a of the fourth resistor element R14 are electrically connected to the power supply terminal V1. The first terminal 12a of the second resistor element R12 and the first terminal 13a of the third resistor element R13 are electrically connected to the ground terminal G1. The second terminal 11b of the first resistor element R11 and the second terminal 12b of the second resistor element R12 are electrically connected to the first output terminal E11. The second terminal 13b of the third resistor element R13 and the second terminal 14b of the fourth resistor element R14 are electrically connected to the second output terminal E12.

[0029] The magnetic sensor 1 further includes a plurality of wiring layers 44 each made of a conductive material. The plurality of wiring layers 44 includes a wiring layer 44 connecting the first terminals 11a, 14a to the power supply terminal V1, a wiring layer 44 connecting the first terminals 12a, 13a to the ground terminal G1, a wiring layer 44 connecting the second terminals 11b, 12b to the first output terminal E11, and a wiring layer 44 connecting the second terminals 13b, 14b to the second output terminal E12.

[0030] As will be described later, the plurality of MR elements 20 includes, in addition to the plurality of MR elements 20 that constitute the plurality of element arrays 60, a plurality of MR elements 20 that do not constitute the plurality of element arrays 60. In Fig. 3, only the plurality of MR elements 20 that constitute the plurality of element arrays 60 are shown.

[0031] Next, the arrangement of the multiple MR elements 20 and the configuration of the element array 60 will be described in detail with reference to Figures 4 and 5. Here, the first resistor section R11 will be used as an example. Figure 5 is a plan view showing one element array 60 included in the first resistor section R11.

[0032] On the substrate 5, the MR elements 20 are arranged in a first direction and in a second direction intersecting the first direction. In particular, in this embodiment, the MR elements 20 are arranged in a direction parallel to the Y direction and a direction parallel to the X direction.

[0033] The multiple MR elements 20 include multiple first MR elements 20A connected to the first terminal 11a and multiple second MR elements 20B connected to the second terminal 11b. The multiple first MR elements 20A are aligned in a row along the first direction or the second direction. The multiple second MR elements 20B are aligned in a row along the first direction or the second direction. In this embodiment in particular, both the multiple first MR elements 20A and the multiple second MR elements 20B are aligned in a row along a direction parallel to the X direction.

[0034] The first resistor section R11 may include, as the plurality of element arrays 60, element arrays 60 that satisfy predetermined requirements and element arrays 60 that do not satisfy the predetermined requirements. First, the plurality of element arrays 60 that satisfy the predetermined requirements will be described. In the following description, the element arrays 60 are element arrays 60 that satisfy the predetermined requirements unless otherwise specified.

[0035] Each of the element arrays 60 includes a first portion 60a1, a second portion 60b, and a third portion 60a2, which are arranged in this order from the first terminal 11a side. The first portion 60a1 includes the first MR element 20A. The third portion 60a2 includes the second MR element 20B.

[0036] The first portion 60a1 and the third portion 60a2 each extend in a first direction, i.e., a direction parallel to the Y direction. The second portion 60b extends in a second direction, i.e., a direction parallel to the X direction. In the first resistor portion R11, the first portion 60a1 extends in the -Y direction from the first terminal 11a toward the second portion 60b. The second portion 60b extends in the -X direction from the first portion 60a1 toward the third portion 60a2. The third portion 60a2 extends in the -Y direction from the second portion 60b toward the second terminal 11b.

[0037] In each of the first portion 60a1 and the third portion 60a2, the multiple MR elements 20 are aligned in a direction parallel to the Y direction. In the second portion 60b, the multiple MR elements 20 are aligned in a direction parallel to the X direction.

[0038] As shown in FIG. 5, the MR element 20 located at one end of the second portion 60b belongs to both the first portion 60a1 and the second portion 60b. Therefore, in this embodiment, the first portion 60a1 and the second portion 60b partially overlap each other. Furthermore, the MR element 20 located at the other end of the second portion 60b belongs to both the second portion 60b and the third portion 60a2. Therefore, in this embodiment, the second portion 60b and the third portion 60a2 partially overlap each other.

[0039] The number of MR elements 20 included in the first portion 60a1 differs depending on the element array 60 to which the first portion 60a1 belongs. Now, let us focus on any two adjacent element arrays 60 spaced apart in Fig. 4. The difference between the number of MR elements 20 included in the first portion 60a1 belonging to one of the two element arrays 60 and the number of MR elements 20 included in the first portion 60a1 belonging to the other of the two element arrays 60 is one.

[0040] The number of MR elements 20 included in the third portion 60a2 differs depending on the element array 60 to which the third portion 60a2 belongs. Here, attention is focused on any two adjacent element arrays 60 spaced apart in Fig. 4. The difference between the number of MR elements 20 included in the third portion 60a2 belonging to one of the two element arrays 60 and the number of MR elements 20 included in the third portion 60a2 belonging to the other of the two element arrays 60 is one.

[0041] The sum of the number of MR elements 20 included in the first portion 60a1 and the number of MR elements 20 included in the third portion 60a2 is the same regardless of the element array 60 to which both the first portion 60a1 and the third portion 60a2 belong. Furthermore, the number of MR elements 20 included in the second portion 60b is the same regardless of the element array 60 to which the second portion 60b belongs. Particularly in this embodiment, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60. Note that each of the multiple element arrays 60 does not include an MR element 20 that does not belong to any of the first portion 60a1, the second portion 60b, and the third portion 60a2.

[0042] 4, the sum of the number of MR elements 20 included in the first portion 60a1 and the number of MR elements 20 included in the third portion 60a2 is 25. The number of MR elements 20 included in the second portion 60b is 13.

[0043] Next, an element array 60 that does not satisfy the predetermined requirement will be described. The element array 60 that does not satisfy the predetermined requirement includes the second portion 60b but does not include either the first portion 60a1 or the third portion 60a2. In the example shown in FIG. 4, one element array 60 that includes the first MR element 20A located furthest in the X direction and the second MR element 20B located furthest in the X direction does not include the third portion 60a2. Therefore, this one element array 60 is the element array 60 that does not satisfy the predetermined requirement. The number of MR elements 20 included in this one element array 60 is the same as the number of MR elements 20 included in each of the other multiple element arrays 60. Furthermore, the number of MR elements 20 included in the second portion 60b of this one element array 60 is the same as the number of MR elements 20 included in the second portion 60b of each of the other multiple element arrays 60.

[0044] 6 and 7, the manner in which the MR elements 20 are connected in each of the first portion 60a1, the second portion 60b, and the third portion 60a2 will be described. Fig. 6 is a plan view showing the MR elements 20, the lower electrodes, and the upper electrodes. Fig. 7 is a side view showing a portion of the element array 60.

[0045] The wiring 40 includes a plurality of lower electrodes 41 and a plurality of upper electrodes 42. Each lower electrode 41 has an elongated shape. A gap is formed between two adjacent lower electrodes 41 with a gap therebetween. An MR element 20 is disposed on the upper surface of each lower electrode 41 near both ends of the lower electrode 41 in the longitudinal direction. Each upper electrode 42 has an elongated shape and is disposed on two adjacent lower electrodes 41 with a gap therebetween so as to overlap with the two adjacent MR elements 20 when viewed from the Z direction.

[0046] 7, the multiple upper electrodes 42 are arranged at intervals from the multiple MR elements 20 in the Z direction. The wiring 40 further includes multiple via electrodes 43 each made of a conductive material. Each of the multiple via electrodes 43 connects the MR element 20 to the upper electrode 42. With this configuration, each of the multiple element rows 60 includes multiple MR elements 20 connected in series by the multiple lower electrodes 41, the multiple upper electrodes 42, and the multiple via electrodes 43.

[0047] In the first portion 60a1 and the third portion 60a2, each of the plurality of lower electrodes 41 and the plurality of upper electrodes 42 extends in a direction parallel to the Y direction. In the second portion 60b, each of the plurality of lower electrodes 41 and the plurality of upper electrodes 42 extends in a direction parallel to the X direction.

[0048] 7, the dimension of each of the plurality of upper electrodes 42 in a direction parallel to the Z direction may be larger than the dimension of each of the plurality of lower electrodes 41 in a direction parallel to the Z direction. In this case, the resistance value of each of the plurality of upper electrodes 42 may be smaller than the resistance value of each of the plurality of lower electrodes 41.

[0049] Note that first terminal 11a may be arranged in the same position as the plurality of lower electrodes 41 in a direction parallel to the Z direction, or may be arranged in the same position as the plurality of upper electrodes 42 in a direction parallel to the Z direction. When first terminal 11a is arranged in the same position as the plurality of upper electrodes 42 and the dimension of each of the plurality of upper electrodes 42 in a direction parallel to the Z direction is larger than the dimension of each of the plurality of lower electrodes 41 in a direction parallel to the Z direction, the resistance value of first terminal 11a is smaller than when first terminal 11a is arranged in the same position as the plurality of lower electrodes 41.

[0050] The above description of the first terminal 11a also applies to the second terminal 11b. The second terminal 11b may be disposed at the same position as the first terminal 11a in a direction parallel to the Z direction, or may be disposed at a different position from the first terminal 11a in a direction parallel to the Z direction.

[0051] Furthermore, the number of MR elements 20 included in each of the multiple element arrays 60 may be an even number. When the number of MR elements 20 is an even number, in each of the multiple element arrays 60, the first MR element 20A and the MR element 20 adjacent to the first MR element 20A can be connected by the lower electrode 41, and the second MR element 20B and the MR element 20 adjacent to the second MR element 20B can be connected by the lower electrode 41. This allows the first terminal 11a to be arranged above the first MR element 20A, and the second terminal 11b to be arranged above the second MR element 20B.

[0052] Up to this point, the first resistor section R11 has been described as an example. The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. As shown in FIG. 3, the first terminal 12a, the second terminal 12b, and the multiple element arrays 60 of the second resistor section R12 may be symmetrical to the first terminal 11a, the second terminal 11b, and the multiple element arrays 60 of the first resistor section R11 with respect to the XZ plane.

[0053] 3, the first terminal 13a, the second terminal 13b, and the multiple element rows 60 of the third resistor section R13 may be symmetrical with the first terminal 12a, the second terminal 12b, and the multiple element rows 60 of the second resistor section R12, with respect to the YZ plane. The first terminal 13a, the second terminal 13b, and the multiple element rows 60 of the third resistor section R13 may also be symmetrical (rotationally symmetrical) with the first terminal 11a, the second terminal 11b, and the multiple element rows 60 of the first resistor section R11, with respect to a predetermined point C1 (see FIG. 1).

[0054] 3, the first terminal 14a, the second terminal 14b, and the multiple element rows 60 of the fourth resistor section R14 may be symmetrical with the first terminal 13a, the second terminal 13b, and the multiple element rows 60 of the third resistor section R13, with respect to the XZ plane. The first terminal 14a, the second terminal 14b, and the multiple element rows 60 of the fourth resistor section R14 may be further symmetrical with the first terminal 11a, the second terminal 11b, and the multiple element rows 60 of the first resistor section R11, with respect to the YZ plane. The first terminal 14a, the second terminal 14b, and the multiple element rows 60 of the fourth resistor section R14 may be further symmetrical (rotationally symmetrical) with the first terminal 12a, the second terminal 12b, and the multiple element rows 60 of the second resistor section R12, with respect to a predetermined point C1 (see FIG. 1).

[0055] Next, the inactive MR element 20 will be described with reference to Fig. 8. Fig. 8 is a side view showing the inactive MR element 20. The inactive MR element 20 means an MR element 20 that is not involved in the detection signal generated by the magnetic sensor 1. The inactive MR element 20 is provided in an area other than the area for forming the first to fourth resistor portions R11 to R14, and does not constitute the first to fourth resistor portions R11 to R14.

[0056] Here, among the plurality of MR elements 20, the plurality of elements that are arranged on the plurality of lower electrodes 41 and electrically connected to the plurality of upper electrodes 42 are referred to as the plurality of first-type elements. Also, among the plurality of MR elements 20, the plurality of elements that are arranged on the plurality of lower electrodes 41 and are not electrically connected to the plurality of upper electrodes 42 are referred to as the plurality of second-type elements. The plurality of second-type elements are an example of inactive MR elements 20. The inactive MR element 20 shown in FIG. 8 is also a second-type element.

[0057] It should be noted that the lower electrode 41 does not need to be provided below the inactive MR element 20 as long as the requirement that it is not related to the detection signal generated by the magnetic sensor 1 is satisfied.

[0058] A wiring layer 44 may be arranged in regions other than the regions for forming the first to fourth resistor portions R11 to R14. The wiring layer 44 is arranged at intervals from the plurality of MR elements 20 in a direction parallel to the Z direction. The wiring layer 44 may overlap with a portion of the plurality of second-type elements (inactive MR elements 20) when viewed from the Z direction.

[0059] Next, the configuration of the MR element 20 will be described with reference to Fig. 9 and Fig. 10. Fig. 9 is a perspective view showing the MR element 20. Fig. 10 is a plan view showing the free layer of the MR element 20.

[0060] The MR element 20 includes a magnetization fixed layer 21 having a magnetization 21m with a fixed direction, a free layer 23, and a gap layer 22 disposed between the magnetization fixed layer 21 and the free layer 23. The material and shape of the free layer 23 are selected so as to have a magnetic vortex structure (also called a vortex structure). The gap layer 22 is a tunnel barrier layer or a nonmagnetic conductive layer.

[0061] The free layer 23 has a cylindrical or nearly cylindrical shape. The free layer 23 has a vortex magnetization 23m centered at a center 23c of the magnetic vortex structure. When no magnetic field is applied to the MR element 20, the center 23c of the magnetic vortex structure coincides with or nearly coincides with the axis of the cylinder. The center 23c of the magnetic vortex structure moves in response to the target magnetic field MF. In the examples shown in FIGS. 9 and 10, the entire MR element 20 has a cylindrical shape.

[0062] The center 23c of the magnetic vortex structure moves when a component of the target magnetic field MF perpendicular to the Z direction is applied to the free layer 23. It is preferable that the free layer 23 does not saturate within the range of change in the intensity of this component.

[0063] In this embodiment, the magnetization 21m of the magnetization fixed layer 21 includes a component in a direction parallel to the X direction. When the magnetization 21m of the magnetization fixed layer 21 includes a component in a specific direction, the component in the specific direction may be the main component of the magnetization 21m of the magnetization fixed layer 21. Alternatively, the magnetization 21m of the magnetization fixed layer 21 may not include a component in a direction perpendicular to the specific direction. In this embodiment, when the magnetization 21m of the magnetization fixed layer 21 includes a component in a specific direction, the direction of the magnetization 21m of the magnetization fixed layer 21 becomes a specific direction or approximately a specific direction.

[0064] The MR element 20 may further include an antiferromagnetic layer. The antiferromagnetic layer is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixed layer 21 to fix the direction of the magnetization 21m of the magnetization fixed layer 21. Alternatively, the magnetization fixed layer 21 may be a so-called self-pinned type fixed layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type fixed layer has a synthetic ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled.

[0065] Here, the resistance value of the MR element 20 will be described taking as an example the case where the direction of the magnetization 21m of the magnetization fixed layer 21 is the −X direction. Figures 11 and 12 show the free layer 23 when a magnetic field component MFx in a direction parallel to the X direction of the target magnetic field MF is applied to the free layer 23.

[0066] 11 shows the free layer 23 when the direction of the magnetic field component MFx is the X direction. In this case, the magnetic field component MFx moves the center 23c of the magnetic vortex structure, and the amount of magnetization 23m oriented in the X direction becomes greater than the amount of magnetization 23m oriented in the −X direction. In this case, the resistance value of the MR element 20 increases.

[0067] 12 shows the free layer 23 when the direction of the magnetic field component MFx is the −X direction. In this case, the magnetic field component MFx moves the center 23c of the magnetic vortex structure, and the amount of magnetization 23m oriented in the −X direction becomes greater than the amount of magnetization 23m oriented in the X direction. In this case, the resistance value of the MR element 20 decreases.

[0068] The amount of change in the resistance value of the MR element 20 depends on the strength of the magnetic field component MFx. When the direction of the magnetic field component MFx is the X direction, as the strength of the magnetic field component MFx increases, the amount of magnetization 23m oriented in the X direction increases. The resistance value of the MR element 20 increases as the amount of magnetization 23m oriented in the X direction increases. Also, when the direction of the magnetic field component MFx is the −X direction, as the strength of the magnetic field component MFx increases, the amount of magnetization 23m oriented in the −X direction increases. The resistance value of the MR element 20 decreases as the amount of magnetization 23m oriented in the −X direction increases. As the strength of the magnetic field component MFx increases, the resistance value of the MR element 20 changes in a direction in which its increase or decrease increases. As the strength of the magnetic field component MFx decreases, the resistance value of the MR element 20 changes in a direction in which its increase or decrease decreases decreases. In particular, in this embodiment, the relationship between the strength of the magnetic field component MFx and the resistance value of the MR element 20 is linear or approximately linear as long as the requirement that the free layer 23 is not saturated is satisfied.

[0069] Next, the direction of the magnetization 21m of the magnetization fixed layer 21 in each of the first to fourth resistance sections R11 to R14 will be described with reference to FIG. 2. The magnetization 21m of each of the magnetization fixed layers 21 of the multiple MR elements 20 in the first resistance section R11 includes a component in a first magnetization direction. The magnetization 21m of each of the magnetization fixed layers 21 of the multiple MR elements 20 in the second resistance section R12 includes a component in a second magnetization direction opposite to the first magnetization direction. The magnetization 21m of each of the magnetization fixed layers 21 of the multiple MR elements 20 in the third resistance section R13 includes a component in the first magnetization direction. The magnetization 21m of each of the magnetization fixed layers 21 of the multiple MR elements 20 in the fourth resistance section R14 includes a component in the second magnetization direction. In Fig. 2, two arrows drawn near the first and third resistors R11 and R13 indicate the first magnetization direction. In Fig. 2, two arrows drawn near the second and fourth resistors R12 and R14 indicate the second magnetization direction. In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the -X direction.

[0070] Next, at least one detection signal generated by the magnetic sensor 1 will be described with reference to Fig. 2. When the direction of the magnetic field component MFx is the X direction, the resistance value of each of the multiple MR elements 20 in the first and third resistor units R11, R13 decreases, and the resistance value of each of the multiple MR elements 20 in the second and fourth resistor units R12, R14 increases, compared to a state in which the magnetic field component MFx does not exist. As a result, the resistance value of each of the first and third resistor units R11, R13 decreases, and the resistance value of each of the second and fourth resistor units R12, R14 increases.

[0071] When the direction of the magnetic field component is the −X direction, the change in the resistance value of each of the first to fourth resistor parts R11 to R14 is opposite to that when the direction of the magnetic field component MFx is the X direction.

[0072] In this way, when the direction and intensity of the magnetic field component MFx change, the resistance values ​​of the first to fourth resistor elements R11-R14 change such that the resistance value of each of the first and third resistor elements R11, R13 increases while the resistance value of each of the second and fourth resistor elements R12, R14 decreases, or the resistance value of each of the first and third resistor elements R11, R13 decreases while the resistance value of each of the second and fourth resistor elements R12, R14 increases. This causes a change in the potential at the junction of the first and second resistor elements R11, R12, i.e., the potential of the first output terminal E11, and the potential at the junction of the third and fourth resistor elements R13, R14, i.e., the potential of the second output terminal E12. The magnetic sensor 1 may generate, as detection signals, a signal corresponding to the potential at the first output terminal E11 and a signal corresponding to the potential at the second output terminal E12. Alternatively, the magnetic sensor 1 may generate, as the first detection signal, a signal corresponding to the potential difference between the first output terminal E11 and the second output terminal E12. In this case, the magnetic sensor 1 may further include a differential amplifier (differential detector) that outputs, as the detection signal, a signal corresponding to the potential difference between the first output terminal E11 and the second output terminal E12.

[0073] Next, a brief description will be given of a manufacturing method of the magnetic sensor 1 according to this embodiment. The manufacturing method of the magnetic sensor 1 includes a step of forming a plurality of MR elements 20 on a substrate 5. In the step of forming the plurality of MR elements 20, first, a plurality of initial MR elements that will later become the plurality of MR elements 20 are formed. Each of the plurality of initial MR elements includes at least an initial magnetization fixed layer that will later become a magnetization fixed layer 21, a free layer 23, and a gap layer 22.

[0074] Next, the magnetization direction of the initial magnetization pinned layer is pinned in the predetermined direction using a laser beam and an external magnetic field of a predetermined direction. For example, for the initial MR elements that will later become the MR elements 20 of the first and third resistor units R11 and R13, the initial MR elements are irradiated with laser beam while applying an external magnetic field of the first magnetization direction (X direction). If the initial MR elements include an antiferromagnetic layer, the laser beam is irradiated so that the temperature of the initial MR elements irradiated with the laser beam is equal to or higher than the blocking temperature of the antiferromagnetic layer. The temperature of the initial MR elements can be adjusted, for example, by the intensity and pulse width of the laser beam. After the laser beam irradiation, when the temperature of the initial MR elements drops below the blocking temperature, the magnetization direction of the initial magnetization pinned layer is pinned in the first magnetization direction. As a result, the initial magnetization pinned layer becomes the magnetization pinned layer 21, and the initial MR elements become the MR elements 20 of the first and third resistor units R11 and R13.

[0075] Furthermore, in the other initial MR elements that will later become the MR elements 20 of the second and fourth resistance units R12 and R14, the direction of the external magnetic field is set to the second magnetization direction (-X direction), thereby fixing the magnetization direction of the initial magnetization pinned layer of each of the other initial MR elements to the second magnetization direction. In this way, the MR elements 20 of the second and fourth resistance units R12 and R14 are formed.

[0076] In addition, for the inactive MR element 20, the direction of magnetization of the initial magnetization fixed layer may or may not be fixed in the above-mentioned predetermined direction.

[0077] Next, the effects of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, each of the first to fourth resistor sections R11 to R14 includes a plurality of element arrays 60 connected in parallel to one another. Here, the number of MR elements included in one element array 60 is represented by n, the number of element arrays 60 included in one resistor section is represented by m, and the resistance value of one MR element 20 is represented by r. The resistance value R of any one resistor section among the first to fourth resistor sections R11 to R14 is expressed by the following equation (1):

[0078] R=nr / m …(1)

[0079] As can be seen from equation (1), when comparing the same number of MR elements 20, according to this embodiment, the resistance value of each of the first to fourth resistor units R11 to R14 can be made smaller than when all of the MR elements 20 are connected in series in each of the first to fourth resistor units R11 to R14. As a result, according to this embodiment, the number of MR elements 20 can be increased while suppressing Johnson noise and suppressing deterioration of high-frequency noise characteristics.

[0080] Furthermore, according to this embodiment, even if one of the element arrays 60 is broken, it is possible to continue using the magnetic sensor 1. In this case, the resistance value R is expressed by the following equation (2).

[0081] R=nr / (m-1) …(2)

[0082] Furthermore, according to this embodiment, even if one of the multiple MR elements 20 is short-circuited, the amount of change in the resistance value of each of the first to fourth resistor units R11 to R14 can be made smaller than when all of the MR elements 20 are connected in series in each of the first to fourth resistor units R11 to R14. Note that the resistance value R when one of the multiple MR elements 20 is short-circuited is expressed by the following equation (3):

[0083] R = n(n-1)r / (m(n-1)+1) …(3)

[0084] Incidentally, in order to increase the number of MR elements 20 without increasing the size of the magnetic sensor 1, it is conceivable to match the planar shapes (shapes viewed from the Z direction) of the first to fourth resistor portions R11 to R14 with the shapes and arrangement of the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12. To achieve this, it is conceivable to make the shape of each of the multiple element arrays 60 when viewed from the Z direction a bent shape to match the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12.

[0085] In this embodiment, each of the multiple element arrays 60 includes a first portion 60a1 extending in a direction parallel to the Y direction, a second portion 60b extending in a direction parallel to the X direction, and a third portion 60a2 extending in a direction parallel to the Y direction. The number of MR elements 20 included in the first portion 60a1 varies depending on the element array 60 to which the first portion 60a1 belongs, the number of MR elements 20 included in the second portion 60b is the same regardless of the element array 60 to which the second portion 60b belongs, and the number of MR elements 20 included in the third portion 60a2 varies depending on the element array 60 to which the third portion 60a2 belongs.

[0086] Consider the case where the number of MR elements 20 included in the second portion 60b of each of the multiple element arrays 60 is the same, and the shape and arrangement of the second portion 60b when viewed from the Z direction are the same. If the number of MR elements 20 included in the first portion 60a1 is the same regardless of the element array 60 to which the first portion 60a1 belongs, the multiple first MR elements 20A are aligned along a direction intersecting both the X direction and the Y direction. In the first resistor section R11, the multiple first MR elements 20A are aligned along a direction rotated 45° from the X direction toward the −Y direction. In this case, the MR elements 20 located on the X direction side of each of the multiple first MR elements 20A cannot be used as the MR elements 20 constituting the first resistor section R11. Therefore, in this case, the number of MR elements 20 included in the first resistor section R11 is reduced. Furthermore, in this case, wasted space is generated on the X direction side of the multiple first MR elements 20A.

[0087] The above description of the first portion 60a1 also applies to the third portion 60a2. In the first resistor portion R11, the multiple second MR elements 20B are aligned in a direction rotated 45° from the X direction toward the −Y direction. In this case, the MR elements 20 located on the −X direction side of each of the multiple second MR elements 20B cannot be used as the MR elements 20 constituting the first resistor portion R11. Therefore, in this case, the number of MR elements 20 included in the first resistor portion R11 is reduced. Furthermore, in this case, wasted space is generated on the −X direction side of the multiple second MR elements 20B.

[0088] In contrast, according to the present embodiment, the number of MR elements 20 included in the first portion 60a1 is varied depending on the element row 60 to which the first portion 60a1 belongs, and the number of MR elements 20 included in the third portion 60a2 is varied depending on the element row 60 to which the third portion 60a2 belongs, thereby increasing the number of MR elements 20 included in the first resistance portion R11 while preventing wasted space from being generated near the first resistance portion R11. That is, according to the present embodiment, the number of MR elements 20 can be increased while preventing the magnetic sensor 1 from becoming large.

[0089] The above description of the first resistor portion R11 also applies to the second to fourth resistor portions R12 to R14.

[0090] As described above, according to this embodiment, it is possible to increase the number of MR elements 20 while suppressing deterioration of high-frequency noise characteristics and suppressing an increase in size.

[0091] Furthermore, in this embodiment, both the first terminal and the second terminal extend in a direction parallel to the X direction, and both the plurality of first MR elements 20A and the plurality of second MR elements 20B are aligned in a direction parallel to the X direction. As a result, according to this embodiment, the plurality of element arrays 60 can be directly connected to the first terminal and the second terminal, and wiring for connecting some of the plurality of element arrays 60 to the first terminal and the second terminal can be omitted. Furthermore, according to this embodiment, the number of MR elements 20 in each of the plurality of element arrays 60 can be made the same, and as a result, the magnitude of the voltage applied to each of the plurality of MR elements 20 can be made the same.

[0092] In this embodiment, the first resistor R11 and the second resistor R12 are arranged symmetrically with respect to the XZ plane, the third resistor R13 and the fourth resistor R14 are arranged symmetrically with respect to the XZ plane, the first resistor R11 and the third resistor R13 are arranged symmetrically (rotationally symmetric) with respect to a predetermined point C1, and the second resistor R12 and the fourth resistor R14 are arranged symmetrically (rotationally symmetric) with respect to the predetermined point C1. As a result, according to this embodiment, the influence of stress applied partially to the magnetic sensor 1 can be canceled out between the first to fourth resistors R11 to R14. As a result, according to this embodiment, it is possible to suppress changes in the detection signal of the magnetic sensor 1 due to local stress.

[0093] [Variations] Next, first to seventh modified examples of the magnetic sensor 1 according to the present embodiment will be described. First, the first modified example will be described with reference to FIG. 13. FIG. 13 is a plan view showing a first resistor section R11 in the first modified example. In the first modified example, the structure of the multiple element arrays 60 of the first resistor section R11 is different from the example shown in FIG. 4. That is, in the first modified example, each of the multiple element arrays 60 includes a portion 60a1, a portion 60b1, a portion 60a2, a portion 60b2, and a portion 60a3, which are provided in this order from the first terminal 11a side. The portion 60a1 includes the first MR element 20A. The portion 60a3 includes the second MR element 20B.

[0094] Each of the portions 60a1 to 60a3 extends in a direction parallel to the Y direction. Each of the portions 60b1 and 60b2 extends in a direction parallel to the X direction. In particular, in the first modified example, each of the multiple element rows 60 extends in the -Y direction, -X direction, -Y direction, X direction, and -Y direction from the first terminal 11a to the second terminal 11b, for each portion, so that the position of the second terminal 11b in the direction parallel to the X direction is the same as the position of the first terminal 11a in the direction parallel to the X direction.

[0095] In each of the portions 60a1 to 60a3, the multiple MR elements 20 are aligned in a direction parallel to the Y direction. In each of the portions 60b1 and 60b2, the multiple MR elements 20 are aligned in a direction parallel to the X direction.

[0096] Each of the portions 60a1 to 60a3 satisfies the requirements for the number of MR elements 20 of the first portion 60a1 or the third portion 60a2 described with reference to Fig. 4. The total number of MR elements 20 included in the portions 60a1 to 60a3 is the same regardless of the element column 60 to which all of the portions 60a1 to 60a3 belong.

[0097] The portions 60b1 and 60b2 each satisfy the requirement for the number of MR elements 20 of the second portion 60b described with reference to Fig. 4. In the first modification, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60.

[0098] The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. Furthermore, the description of the first terminal, second terminal, and multiple element rows of each of the first to fourth resistor sections R11 to R14 described with reference to Fig. 3 also applies to the first to fourth resistor sections R11 to R14 of the first modified example.

[0099] Next, a second modified example will be described with reference to FIG. 14. FIG. 14 is a plan view showing a first resistor section R11 in the second modified example. In the second modified example, the structure of the multiple element arrays 60 of the first resistor section R11 is different from the example shown in FIG. 4. That is, in the second modified example, each of the multiple element arrays 60 includes a portion 60a1, a portion 60b1, a portion 60a2, a portion 60c1, a portion 60a3, a portion 60b2, a portion 60a4, a portion 60c2, and a portion 60a5, which are provided in this order from the first terminal 11a side. The portion 60a1 includes the first MR element 20A. The portion 60a5 includes the second MR element 20B.

[0100] Each of the portions 60a1 to 60a5 extends in a direction parallel to the Y direction. Each of the portions 60b1, 60b2, 60c1, and 60c2 extends in a direction parallel to the X direction. In particular, in the second modified example, each of the multiple element rows 60 extends in the −Y direction, −X direction, −Y direction, X direction, Y direction, −X direction, Y direction, X direction, and −Y direction for each portion from the first terminal 11a to the second terminal 11b so that the positions of the multiple second MR elements 20B in the direction parallel to the Y direction are the same as the positions of the multiple first MR elements 20A in the direction parallel to the Y direction.

[0101] In each of the portions 60a1 to 60a5, the multiple MR elements 20 are aligned in a direction parallel to the Y direction. In each of the portions 60b1, 60b2, 60c1, and 60c2, the multiple MR elements 20 are aligned in a direction parallel to the X direction.

[0102] The portions 60a1 to 60a5, 60c1, and 60c2 each satisfy the requirements for the number of MR elements 20 of the first portion 60a1 or the third portion 60a2 described with reference to Fig. 4. The total number of MR elements 20 included in the portions 60a1 to 60a5, 60c1, and 60c2 is the same regardless of the element column 60 to which all of the portions 60a1 to 60a5, 60c1, and 60c2 belong.

[0103] The portions 60b1 and 60b2 each satisfy the requirement for the number of MR elements 20 of the second portion 60b described with reference to Fig. 4. In the second modification, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60.

[0104] The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. Furthermore, the description of the first terminal, second terminal, and multiple element rows of each of the first to fourth resistor sections R11 to R14 described with reference to Fig. 3 also applies to the first to fourth resistor sections R11 to R14 of the second modified example.

[0105] Next, a third modified example will be described with reference to FIG. 15. FIG. 15 is a plan view showing a first resistor section R11 in the third modified example. In the third modified example, the structure of the multiple element arrays 60 of the first resistor section R11 is different from the example shown in FIG. 4. That is, in the third modified example, each of the multiple element arrays 60 includes a portion 60a1, a portion 60c1, a portion 60a2, a portion 60b, a portion 60a3, a portion 60c2, and a portion 60a4, which are provided in this order from the first terminal 11a side. The portion 60a1 includes the first MR element 20A. The portion 60a4 includes the second MR element 20B.

[0106] Each of the portions 60a1 to 60a4 extends in a direction parallel to the X direction. Each of the portions 60b, 60c1, and 60c2 extends in a direction parallel to the Y direction. In the third modification, each of the multiple element arrays 60 extends in the X direction, -Y direction, -X direction, Y direction, -X direction, -Y direction, and X direction, for each portion, from the first terminal 11a to the second terminal 11b.

[0107] In each of the portions 60a1 to 60a4, the multiple MR elements 20 are aligned in a direction parallel to the X direction. In each of the portions 60b, 60c1, and 60c2, the multiple MR elements 20 are aligned in a direction parallel to the Y direction.

[0108] The portions 60a1 to 60a4, 60c1, and 60c2 each satisfy the requirements for the number of MR elements 20 of the first portion 60a1 or the third portion 60a2 described with reference to Fig. 4. Furthermore, the total number of MR elements 20 included in the portions 60a1 to 60a4, 60c1, and 60c2 is the same regardless of the element column 60 to which all of the portions 60a1 to 60a4, 60c1, and 60c2 belong.

[0109] The portion 60b satisfies the requirement for the number of MR elements 20 of the second portion 60b described with reference to Fig. 4. In the third modification, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60.

[0110] The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. Furthermore, the description of the first terminal, second terminal, and multiple element rows of each of the first to fourth resistor sections R11 to R14 described with reference to Fig. 3 also applies to the first to fourth resistor sections R11 to R14 of the third modified example.

[0111] In particular, in the third modified example, the first terminal 11a of the first resistor portion R11 may be arranged to overlap the power supply terminal V1 when viewed from the Z direction. Similarly, the second terminal 11b of the first resistor portion R11 may be arranged to overlap the first output terminal E11 when viewed from the Z direction.

[0112] Next, a fourth modified example will be described with reference to Fig. 16. Fig. 16 is a plan view showing a first resistor portion R11 in the fourth modified example. In the fourth modified example, the first resistor portion R11 further includes a third terminal 11c. The element array 60 includes a portion 60A connected in parallel by the first terminal 11a and the third terminal 11c, and a portion 60B connected in parallel by the second terminal 11b and the third terminal 11c.

[0113] In portion 60A, each of the multiple element arrays 60 includes portions 60a1, 60b1, and 60a2, which are provided in this order from the first terminal 11a side. In portion 60B, portions 60a3, 60b2, and 60a4, which are provided in this order from the third terminal 11c side. Portion 60a1 includes the first MR element 20A. Portion 60a4 includes the second MR element 20B.

[0114] Each of the portions 60a1 to 60a4 extends in a direction parallel to the Y direction. Each of the portions 60b1 and 60b2 extends in a direction parallel to the X direction. In particular, in the fourth modification, each of the multiple element rows 60 extends in the -Y direction, -X direction, -Y direction, X direction, and -Y direction from the first terminal 11a to the second terminal 11b, for each portion, so that the position of the second terminal 11b in the direction parallel to the X direction is the same as the position of the first terminal 11a in the direction parallel to the X direction.

[0115] In each of the portions 60a1 to 60a4, the multiple MR elements 20 are aligned in a direction parallel to the Y direction. In each of the portions 60b1 and 60b2, the multiple MR elements 20 are aligned in a direction parallel to the X direction.

[0116] Each of the portions 60a1 to 60a4 satisfies the requirements for the number of MR elements 20 of the first portion 60a1 or the third portion 60a2 described with reference to Fig. 4. The total number of MR elements 20 included in the portions 60a1 to 60a4 is the same regardless of the element column 60 to which all of the portions 60a1 to 60a4 belong.

[0117] The portions 60b1 and 60b2 satisfy the requirement for the number of MR elements 20 of the second portion 60b described with reference to Fig. 4. In the fourth modification, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60.

[0118] When the number of MR elements 20 included in each of the plurality of element arrays 60 is the same, the fourth modification can reduce the number of MR elements 20 connected in series in each of the plurality of element arrays 60. This can reduce the resistance value of the first resistor unit R11.

[0119] The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. That is, each of the second to fourth resistor sections R12 to R14 further includes a third terminal. In each of the second to fourth resistor sections R12 to R14, the element arrays 60 include a portion connected in parallel by the first terminal and the third terminal, and a portion connected in parallel by the second terminal and the third terminal.

[0120] Next, a fifth modified example will be described with reference to Fig. 17. Fig. 17 is a side view showing a portion of an element array 60 in the fifth modified example. In the fifth modified example, the number of MR elements 20 included in each of the element arrays 60 is odd. Each of the element arrays 60 further includes a through-hole electrode 80. The shape of the through-hole electrode 80 may be the same as the shape of the MR element 20.

[0121] The arrangement of the through-hole electrodes 80 in the element array 60 is the same as that of any one of the MR elements 20 in the element array 60. For example, the through-hole electrodes 80 may be provided so as to be connected to the first terminal or the second terminal instead of the first MR element 20A or the second MR element 20B. Alternatively, the through-hole electrodes 80 may be provided in place of any one of the MR elements 20 between the first MR element 20A and the second MR element 20B.

[0122] The through-hole electrode 80 is connected to one or two adjacent MR elements 20 spaced apart by a lower electrode 41, an upper electrode 42, and a via electrode 43.

[0123] In the fifth modification, the sum of the number of the MR elements 20 and the number of the through-hole electrodes 80 in each of the element arrays 60 is an even number. The number of the through-hole electrodes 80 is not limited to one, but may be any odd number.

[0124] Next, a sixth modified example will be described with reference to Fig. 18. Fig. 18 is a plan view showing resistor portions and electrode layers in the sixth modified example. Here, any of the first to fourth resistor portions R11 to R14 is represented by the reference symbol R10, a first terminal of the resistor portion R10 is represented by the reference symbol 10a, and a second terminal of the resistor portion R10 is represented by the reference symbol 10b. Also, an electrode layer constituting any of the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12 is represented by the reference symbol 45.

[0125] 18, the MR elements 20 that are not connected to the wirings 40, i.e., the MR elements 20 that do not constitute the element arrays 60, represent inactive MR elements 20. The inactive MR elements 20 may be a second type of elements that are arranged on the lower electrodes 41 and are not electrically connected to the upper electrodes 42.

[0126] In the sixth modification, the wiring layer 44 is disposed above the plurality of inactive MR elements 20 (plurality of second-type elements). The electrode layer 45 is disposed above the plurality of inactive MR elements 20 and the wiring layer 44, and is electrically connected to the wiring layer 44. The plurality of inactive MR elements 20 are arranged so as to overlap with the electrode layer 45 when viewed from the Z direction, and pluralities of the inactive MR elements 20 are arranged in each of the X direction and the Y direction.

[0127] The inactive MR elements 20 may not be electrically connected to the wiring layer 44. Alternatively, the inactive MR elements 20 may be electrically connected to the wiring layer 44 through a plurality of via electrodes (not shown). In this case, the inactive MR elements 20 are electrically connected to the electrode layer 45 through the plurality of via electrodes and the wiring layer 44.

[0128] When multiple inactive MR elements 20 are electrically connected to the electrode layer 45, the multiple inactive MR elements 20 may be electrically connected to any one of the diodes D1 to D4 shown in Figure 2 via multiple lower electrodes (not shown) and a connection layer (not shown) made of a conductive material.

[0129] Next, a seventh modified example will be described with reference to Fig. 19. Fig. 19 is a plan view showing the resistor portion and electrode layers in the seventh modified example. The seventh modified example differs from the sixth modified example in the following respects. In the seventh modified example, the magnetic sensor 1 includes a stacked film 200 instead of the multiple inactive MR elements 20 in the sixth modified example that are arranged to overlap with the electrode layers 45 when viewed from the Z direction.

[0130] The laminated film 200 includes a first layer made of the same magnetic layer as the magnetic layer that constitutes the magnetization fixed layer 21 of the MR element 20, a second layer made of the same non-magnetic layer as the non-magnetic layer that constitutes the gap layer 22 of the MR element 20, and a third layer made of the same magnetic layer as the magnetic layer that constitutes the free layer 23 of the MR element 20.

[0131] The wiring layer 44 is disposed above the inactive laminated film 200. The electrode layer 45 is disposed above the laminated film 200 and the wiring layer 44.

[0132] The laminated film 200 does not have to be electrically connected to the wiring layer 44. Alternatively, the laminated film 200 may be electrically connected to the wiring layer 44 through at least one via electrode (not shown). In this case, the laminated film 200 is electrically connected to the electrode layer 45 through at least one via electrode and the wiring layer 44.

[0133] When the laminated film 200 is electrically connected to the electrode layer 45, the inactive MR elements 20 may be electrically connected to any one of the diodes D1 to D4 shown in Figure 2 via a connecting layer (not shown) made of a conductive material.

[0134] [Second embodiment] Next, a second embodiment of the present invention will be described with reference to Fig. 20 and Fig. 21. Fig. 20 is a circuit diagram showing the circuit configuration of a magnetic sensor according to this embodiment. Fig. 21 is a plan view showing first and second resistor portions in this embodiment.

[0135] The configuration of the magnetic sensor 1 according to this embodiment differs from that of the first embodiment in the following respects: In this embodiment, the second output terminal E12, the third resistor R13, and the fourth resistor R14 in the first embodiment are not provided.

[0136] The first resistor R11 includes a first sub-resistor R11A and a second sub-resistor R11B, which are arranged at different positions. The second resistor R12 includes a first sub-resistor R12A and a second sub-resistor R12B, which are arranged at different positions. The first and second sub-resistor R11A and R11B are arranged in this order from the power supply terminal V1 toward the first output terminal E11. The first and second sub-resistor R12A and R12B are arranged in this order from the first output terminal E11 toward the ground terminal G1.

[0137] The configuration and arrangement of the first sub-resistor R11A are the same as those of the first resistor R11 in the first embodiment. The configuration and arrangement of the second sub-resistor R11B are the same as those of the third resistor R13 in the first embodiment. The first and second sub-resistor R11A and R11B are positioned such that, when viewed from the Z direction, the first sub-resistor R11A overlaps the second sub-resistor R11B when rotated 180° around a predetermined point C1 (see FIG. 1) on the substrate 5.

[0138] The configuration and arrangement of the first sub-resistor R12A are the same as those of the second resistor R12 in the first embodiment. The configuration and arrangement of the second sub-resistor R12B are the same as those of the fourth resistor R14 in the first embodiment. The first and second sub-resistor R12A and R12B are positioned such that, when viewed from the Z direction, the first sub-resistor R12A overlaps with the second sub-resistor R12B when rotated 180° around a predetermined point C1 (see FIG. 1) on the substrate 5.

[0139] Hereinafter, the first and second terminals of the first sub-resistor R11A will be designated by reference numerals 11Aa and 11Ab, the first and second terminals of the second sub-resistor R11B will be designated by reference numerals 11Ba and 11Bb, the first and second terminals of the first sub-resistor R12A will be designated by reference numerals 12Aa and 12Ab, and the first and second terminals of the second sub-resistor R12B will be designated by reference numerals 12Ba and 12Bb.

[0140] The multiple wiring layers 44 in this embodiment include a wiring layer 44 connecting the first terminal 11Aa and the power supply terminal V1, a wiring layer 44 connecting the first terminal 12Ba and the ground terminal G1, and a wiring layer 44 connecting the first terminals 11Ba, 12Aa and the first output terminal E11. The multiple wiring layers 44 further include a wiring layer 44 connecting the second terminal 11Ab and the second terminal 11Bb, and a wiring layer 44 connecting the second terminal 12Ab and the second terminal 12Bb.

[0141] The magnetization 21m of the magnetization pinned layer 21 of each of the MR elements 20 in the first and second sub-resistor units R11A and R11B includes a component in a first magnetization direction. The magnetization 21m of the magnetization pinned layer 21 of each of the MR elements 20 in the first and second sub-resistor units R12A and R12B includes a component in a second magnetization direction opposite to the first magnetization direction. In FIG. 20, two arrows drawn near the first and second sub-resistor units R11A and R11B indicate the first magnetization direction. In FIG. 20, two arrows drawn near the first and second sub-resistor units R12A and R12B indicate the second magnetization direction. In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the −X direction.

[0142] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0143] [Third embodiment] Next, a third embodiment of the present invention will be described with reference to Fig. 22 and Fig. 23. Fig. 22 is a plan view showing a magnetic sensor according to this embodiment. Fig. 23 is a plan view showing a first resistor portion in this embodiment.

[0144] Hereinafter, differences in the configuration of the magnetic sensor 1 according to this embodiment from the first embodiment will be described using the first resistor portion R11 as an example. In this embodiment, each of the multiple element arrays 60 of the first resistor portion R11 includes a portion 60a1, a portion 60b, and a portion 60a2, which are provided in this order from the first terminal 11a side. The portion 60a1 includes the first MR element 20A. The portion 60a2 includes the second MR element 20B.

[0145] The portion 60b includes a plurality of portions 60b1 and a plurality of portions 60b2. The portion 60b is configured by alternately connecting the portions 60b1 and the portions 60b2.

[0146] The portions 60a1, 60a2 and the plurality of portions 60b2 each extend in a direction parallel to the Y direction. The plurality of portions 60b1 each extend in a direction parallel to the X direction. Each of the plurality of element arrays 60 extends alternately in the −Y direction and the −X direction from the first terminal 11a to the second terminal 11b.

[0147] In each of the portions 60a1, 60a2 and the plurality of portions 60b2, the plurality of MR elements 20 are aligned in a direction parallel to the Y direction. In each of the plurality of portions 60b1, the plurality of MR elements 20 are aligned in a direction parallel to the X direction. In the example shown in FIG. 23, in each of the plurality of portions 60b1, two MR elements 20 are aligned in a direction parallel to the X direction. Furthermore, in each of the plurality of portions 60b2, two MR elements 20 are aligned in a direction parallel to the Y direction.

[0148] The portion 60a1 satisfies the requirement for the number of MR elements 20 of the first portion 60a1 in the first embodiment. The portion 60a2 satisfies the requirement for the number of MR elements 20 of the third portion 60a2 in the first embodiment. In addition, the total number of MR elements 20 included in the portions 60a1 and 60a2 is the same regardless of the element array 60 to which the portions 60a1 and 60a2 belong.

[0149] The portions 60b1 and 60b2 each satisfy the requirement for the number of MR elements 20 of the second portion 60b in the first embodiment. In the present embodiment, the number of MR elements 20 included in each of the multiple element arrays 60 is the same regardless of the element array 60.

[0150] The above description of the first resistor section R11 also applies to the second to fourth resistor sections R12 to R14. Furthermore, the description of the first terminal, second terminal, and multiple element arrays of each of the first to fourth resistor sections R11 to R14 in the first embodiment also applies to the first to fourth resistor sections R11 to R14 in this embodiment.

[0151] [Variations] Next, a modified example of the magnetic sensor 1 according to the present embodiment will be described with reference to Fig. 24. Fig. 24 is a plan view showing a first resistor R11 in the modified example. In the modified example, five MR elements 20 are lined up in a direction parallel to the X direction in each of the multiple portions 60b1. Furthermore, five MR elements 20 are lined up in a direction parallel to the Y direction in each of the multiple portions 60b2.

[0152] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0153] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described. First, a schematic configuration of a magnetic sensor according to this embodiment will be described with reference to Fig. 25 and Fig. 26. Fig. 25 is a plan view showing the magnetic sensor according to this embodiment. Fig. 26 is a circuit diagram showing the circuit configuration of the magnetic sensor according to this embodiment.

[0154] The configuration of the magnetic sensor 1 according to this embodiment differs from that of the first embodiment in the following respects: The first resistor R11 includes a first sub-resistor R11A and a second sub-resistor R11B that are arranged at different positions from each other; The second resistor R12 includes a first sub-resistor R12A and a second sub-resistor R12B that are arranged at different positions from each other; The third resistor R13 includes a first sub-resistor R13A and a second sub-resistor R13B that are arranged at different positions from each other; and The fourth resistor R14 includes a first sub-resistor R14A and a second sub-resistor R14B that are arranged at different positions from each other.

[0155] The first and second sub-resistor units R11A and R11B are provided in this order from the power supply terminal V1 toward the first output terminal E11. The first and second sub-resistor units R12A and R12B are provided in this order from the first output terminal E11 toward the ground terminal G1. The first and second sub-resistor units R13A and R13B are provided in this order from the second output terminal E12 toward the ground terminal G1. The first and second sub-resistor units R14A and R14B are provided in this order from the power supply terminal V1 toward the second output terminal E12.

[0156] The first sub-resistor R11A and the second sub-resistor R11B are positioned such that, when viewed from the Z direction, the first sub-resistor R11A is rotated 180° around a predetermined point C1 on the substrate 5, and the second sub-resistor R12A and the second sub-resistor R12B are positioned such that, when viewed from the Z direction, the first sub-resistor R12A is rotated 180° around a predetermined point C1 on the substrate 5, and the second sub-resistor R13A and the second sub-resistor R13B are positioned such that, when viewed from the Z direction, the first sub-resistor R13A is rotated 180° around a predetermined point C1 on the substrate 5, and the second sub-resistor R13B is rotated 180° around a predetermined point C1 on the substrate 5, and the first sub-resistor R13A is rotated 180° around a predetermined point C1 on the substrate 5, and the second sub-resistor R13B is positioned such that, when viewed from the Z direction, the first sub-resistor R13A is rotated 180° around the predetermined point C1 on the substrate 5, and the second sub-resistor R13B is rotated The first sub-resistor R14A and the second sub-resistor R14B are positioned such that when the first sub-resistor R14A is rotated 180° around a predetermined point C1 on the substrate 5, it overlaps with the second sub-resistor R14B when viewed from the Z direction.

[0157] Next, the configurations of the first sub-resistor units R11A, R12A, R13A, and R14A and the second sub-resistor units R11B, R12B, R13B, and R14B will be described with reference to Fig. 27. Fig. 27 is a plan view showing the first sub-resistor units R11A, R12A, R13A, and R14A and the second sub-resistor units R11B, R12B, R13B, and R14B.

[0158] Like the first to fourth resistor sections R11 to R14 in the first embodiment, each of the first sub-resistor sections R11A, R12A, R13A, and R14A and the second sub-resistor sections R11B, R12B, R13B, and R14B includes a first terminal, a second terminal, and multiple element arrays 60. Hereinafter, the first and second terminals of the first sub-resistor section R11A will be denoted by reference characters 11Aa and 11Ab, respectively, and the first and second terminals of the second sub-resistor section R11B will be denoted by reference characters 11Ba and 11Bb, respectively. Furthermore, the first and second terminals of the first sub-resistor section R12A will be denoted by reference characters 12Aa and 12Ab, respectively, and the first and second terminals of the second sub-resistor section R12B will be denoted by reference characters 12Ba and 12Bb, respectively. The first and second terminals of the first sub-resistor R13A are denoted by 13Aa and 13Ab, respectively, the first and second terminals of the second sub-resistor R13B are denoted by 13Ba and 13Bb, respectively, the first and second terminals of the first sub-resistor R14A are denoted by 14Aa and 14Ab, respectively, and the first and second terminals of the second sub-resistor R14B are denoted by 14Ba and 14Bb, respectively.

[0159] The multiple wiring layers 44 in this embodiment include a wiring layer 44 connecting the first terminals 11Aa, 14Aa to the power supply terminal V1, a wiring layer 44 connecting the first terminals 12Ba, 13Ba to the ground terminal G1, a wiring layer 44 connecting the first terminals 11Ba, 12Aa to the first output terminal E11, and a wiring layer 44 connecting the first terminals 13Aa, 14Ba to the second output terminal E12. The multiple wiring layers 44 further include a wiring layer 44 connecting the second terminals 11Ab and 11Bb, a wiring layer 44 connecting the second terminals 12Ab and 12Bb, a wiring layer 44 connecting the second terminals 13Ab and 13Bb, and a wiring layer 44 connecting the second terminals 14Ab and 14Bb.

[0160] Next, the arrangement of the multiple MR elements 20 and the configuration of the element array 60 will be described in detail with reference to Fig. 28. Fig. 28 is a plan view showing the first sub-resistor portion R11A of the first resistor portion R11. Here, the first sub-resistor portion R11A will be described as an example.

[0161] The multiple element arrays 60 of the first sub-resistor section R11A include a first element array 61 and a second element array 62. Each of the first and second element arrays 61, 62 includes, in this order from the first terminal 11Aa side, a portion 60b1, a portion 60a1, a portion 60b2, a portion 60a2, a portion 60b3, a portion 60a3, a portion 60b4, a portion 60a4, a portion 60b5, a portion 60a5, a portion 60b6, a portion 60a6, a portion 60b7, a portion 60a7, and a portion 60b8. The second element array 62 further includes a portion 60c1 provided between the first terminal 11Aa and the portion 60b1 and a portion 60c2 provided between the second terminal 11Ab and the portion 60b8. The portion 60b1 of the first element array 61 and the portion 60c1 of the second element array 62 each include a first MR element 20A. The portion 60b8 of the first element array 61 and the portion 60c2 of the second element array 62 each include a second MR element 20B.

[0162] Each of the portions 60a1 to 60a7, 60c1, and 60c2 extends in a direction parallel to the Y direction. Each of the portions 60b1 to 60b8 extends in a direction parallel to the X direction. Each of the first and second element columns 61 and 62 extends so that it has a meandering shape when viewed from the Z direction.

[0163] In each of the portions 60a1 to 60a7, 60c1, and 60c2, the MR elements 20 are aligned in a direction parallel to the Y direction. In each of the portions 60b1 to 60b8, the MR elements 20 are aligned in a direction parallel to the X direction.

[0164] Each of the portions 60a1 to 60a7 satisfies the requirement for the number of MR elements 20 of the first portion 60a1 or the third portion 60a2 in the first embodiment. Also, each of the portions 60b1 to 60b8 satisfies the requirement for the number of MR elements 20 of the second portion 60b described with reference to Fig. 4. Also, the number of MR elements 20 in the first element row 61 is the same as the number of MR elements 20 in the second element row 62.

[0165] Up to this point, the first sub-resistor R11A has been used as an example. The above explanation of the first sub-resistor R11A also applies to the first sub-resistors R12A, R13A, and R14A and the second sub-resistors R11B, R12B, R13B, and R14B.

[0166] 27, the first terminal 12Aa, the second terminal 12Ab, and the multiple element rows 60 of the first sub-resistor unit R12A may be symmetrical with the first terminal 11Aa, the second terminal 11Ab, and the multiple element rows 60 of the first sub-resistor unit R11A, with respect to the XZ plane. Also, the first terminal 12Ba, the second terminal 12Bb, and the multiple element rows 60 of the second sub-resistor unit R12B may be symmetrical with the first terminal 11Aa, the second terminal 11Ab, and the multiple element rows 60 of the first sub-resistor unit R11A, with respect to the YZ plane.

[0167] The first sub-resistor R12A and the second sub-resistor R13B may be positioned such that, when viewed from the Z direction, the first sub-resistor R12A overlaps the second sub-resistor R13B when rotated 90° about a predetermined point C1. The second sub-resistor R12B and the first sub-resistor R13A may be positioned such that, when viewed from the Z direction, the second sub-resistor R12B overlaps the first sub-resistor R13A when rotated 90° about a predetermined point C1.

[0168] The first terminal 14Aa, the second terminal 14Ab, and the multiple element rows 60 of the first sub-resistor portion R14A may be symmetrical with the first terminal 13Ba, the second terminal 13Bb, and the multiple element rows 60 of the second sub-resistor portion R13B, about the XZ plane. The first terminal 14Ba, the second terminal 14Bb, and the multiple element rows 60 of the second sub-resistor portion R14B may be symmetrical with the first terminal 13Aa, the second terminal 13Ab, and the multiple element rows 60 of the first sub-resistor portion R13A, about the XZ plane.

[0169] Next, the direction of the magnetization 21m of the magnetization fixed layer 21 in each of the first sub-resistor units R11A, R12A, R13A, and R14A and the second sub-resistor units R11B, R12B, R13B, and R14B will be described with reference to Fig. 26. The magnetization 21m of the magnetization fixed layer 21 of each of the MR elements 20 in the first sub-resistor units R11A and R13A and the second sub-resistor units R11B and R13B includes a component in a first magnetization direction. The magnetization 21m of the magnetization fixed layer 21 of each of the MR elements 20 in the first sub-resistor units R12A and R14A and the second sub-resistor units R12B and R14B includes a component in a second magnetization direction opposite to the first magnetization direction. In Fig. 27, four arrows drawn near the first sub-resistors R11A, R13A and the second sub-resistors R11B, R13B indicate the first magnetization direction. In Fig. 27, four arrows drawn near the first sub-resistors R12A, R14A and the second sub-resistors R12B, R14B indicate the second magnetization direction. In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the -X direction.

[0170] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0171] [Fifth embodiment] Next, a fifth embodiment of the present invention will be described with reference to Fig. 29 and Fig. 30. Fig. 29 is a circuit diagram showing a circuit configuration of a magnetic sensor according to this embodiment. Fig. 30 is a plan view showing first and second resistor portions in this embodiment.

[0172] The configuration of the magnetic sensor 1 according to this embodiment differs from that of the fourth embodiment in the following respects: In this embodiment, the second output terminal E12, the third resistor R13, and the fourth resistor R14 in the fourth embodiment are not provided.

[0173] The first resistor R11 includes a third sub-resistor R11C and a fourth sub-resistor R11D in addition to the first and second sub-resistor R11A and R11B. The first to fourth sub-resistor R11A, R11B, R11C, and R11D are located at different positions. The first to fourth sub-resistor R11A, R11B, R11C, and R11D are arranged in this order from the power supply terminal V1 toward the first output terminal E11.

[0174] The second resistor R12 includes a third sub-resistor R12C and a fourth sub-resistor R12D in addition to the first and second sub-resistors R12A and R12B. The first through fourth sub-resistors R12A, R12B, R12C, and R12D are arranged in different positions from one another. The first through fourth sub-resistors R12A, R12B, R12C, and R12D are arranged in this order from the first output terminal E11 toward the ground terminal G1.

[0175] The configuration and arrangement of the first sub-resistor R11A are the same as those of the second sub-resistor R14B in the fourth embodiment. The configuration and arrangement of the second sub-resistor R11B are the same as those of the first sub-resistor R14A in the fourth embodiment. The configuration and arrangement of the third sub-resistor R11C are the same as those of the first sub-resistor R11A in the fourth embodiment. The configuration and arrangement of the fourth sub-resistor R11D are the same as those of the second sub-resistor R11B in the fourth embodiment.

[0176] The configuration and arrangement of the first sub-resistor R12A are the same as those of the first sub-resistor R12A in the fourth embodiment. The configuration and arrangement of the second sub-resistor R12B are the same as those of the second sub-resistor R12B in the fourth embodiment. The configuration and arrangement of the third sub-resistor R12C are the same as those of the second sub-resistor R13B in the fourth embodiment. The configuration and arrangement of the fourth sub-resistor R12D are the same as those of the first sub-resistor R13A in the fourth embodiment.

[0177] Hereinafter, the first and second terminals of the third sub-resistor R11C will be designated by reference numerals 11Ca and 11Cb, the first and second terminals of the fourth sub-resistor R11D will be designated by reference numerals 11Da and 11Db, the first and second terminals of the third sub-resistor R12C will be designated by reference numerals 12Ca and 12Cb, and the first and second terminals of the fourth sub-resistor R12D will be designated by reference numerals 12Da and 12Db.

[0178] The multiple wiring layers 44 in this embodiment include a wiring layer 44 that connects the first terminal 11Aa and the power supply terminal V1, a wiring layer 44 that connects the second terminal 12Da and the ground terminal G1, and a wiring layer 44 that connects the first terminals 11Da, 12Aa and the first output terminal E11. The multiple wiring layers 44 further include a wiring layer 44 connecting the second terminal 11Ab and the second terminal 11Bb, a wiring layer 44 connecting the first terminal 11Ba and the first terminal 11Ca, a wiring layer 44 connecting the second terminal 11Cb and the second terminal 11Db, a wiring layer 44 connecting the second terminal 12Ab and the second terminal 12Bb, a wiring layer 44 connecting the first terminal 12Ba and the first terminal 12Ca, and a wiring layer 44 connecting the second terminal 12Cb and the second terminal 12Db.

[0179] The magnetization 21m of the magnetization pinned layer 21 of each of the MR elements 20 in the first through fourth sub-resistors R11A, R11B, R11C, and R11D includes a component in the first magnetization direction. The magnetization 21m of the magnetization pinned layer 21 of each of the MR elements 20 in the first through fourth sub-resistors R12A, R12B, R12C, and R12D includes a component in the second magnetization direction opposite to the first magnetization direction. In FIG. 29, four arrows drawn near the first through fourth sub-resistors R11A, R11B, R11C, and R11D indicate the first magnetization direction. In FIG. 29, four arrows drawn near the first through fourth sub-resistors R12A, R12B, R12C, and R12D indicate the second magnetization direction. In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the −X direction.

[0180] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0181] [Sixth embodiment] Next, a sixth embodiment of the present invention will be described with reference to Fig. 31 to Fig. 33. Fig. 31 is a plan view showing a magnetic sensor according to this embodiment. Fig. 32 is a circuit diagram showing a circuit configuration of the magnetic sensor according to this embodiment. Fig. 33 is a plan view showing first to eighth resistor portions in this embodiment.

[0182] The magnetic sensor 101 according to this embodiment includes a first detection circuit 2 and a second detection circuit 3. The configuration of each of the first and second detection circuits 2 and 3 is basically the same as the configuration of the magnetic sensor 1 according to the first embodiment. That is, each of the first and second detection circuits 2 and 3 includes a plurality of MR elements 20.

[0183] The first detection circuit 2 further includes a power supply terminal V2, a ground terminal G2, a first output terminal E21, a second output terminal E22, a first resistor unit R21, a second resistor unit R22, a third resistor unit R23, and a fourth resistor unit R24. The power supply terminal V2, the ground terminal G2, the first output terminal E21, and the second output terminal E22 are each formed of an electrode layer made of a conductive material. Each of the first to fourth resistor units R21 to R24 includes a plurality of MR elements 20 from the plurality of MR elements 20.

[0184] 32, the first resistor element R21 is provided between the power supply terminal V2 and the first output terminal E21 in the circuit configuration. The second resistor element R22 is provided between the ground terminal G2 and the first output terminal E21 in the circuit configuration. The third resistor element R23 is provided between the ground terminal G2 and the second output terminal E22 in the circuit configuration. The fourth resistor element R24 is provided between the power supply terminal V2 and the second output terminal E22 in the circuit configuration.

[0185] A voltage or current of a predetermined magnitude is applied to the power supply terminal V2, and the ground terminal G2 is connected to the ground.

[0186] The first detection circuit 2 may further include four diodes (not shown). The connections between the four diodes and the power supply terminal V2, the ground terminal G2, the first output terminal E21, and the second output terminal E22 are similar to the connections between the four diodes D1 to D4 and the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12 in the first embodiment.

[0187] The second detection circuit 3 further includes a power supply terminal V3, a ground terminal G3, a first output terminal E31, a second output terminal E32, a fifth resistor unit R31, a sixth resistor unit R32, a seventh resistor unit R33, and an eighth resistor unit R34. The power supply terminal V3, the ground terminal G3, the first output terminal E31, and the second output terminal E32 are each formed of an electrode layer made of a conductive material. Each of the fifth to eighth resistor units R31 to R34 includes a plurality of MR elements 20 from the plurality of MR elements 20.

[0188] 32, the fifth resistor R31 is provided between the power supply terminal V3 and the first output terminal E31 in the circuit configuration. The sixth resistor R32 is provided between the ground terminal G3 and the first output terminal E31 in the circuit configuration. The seventh resistor R33 is provided between the ground terminal G3 and the second output terminal E32 in the circuit configuration. The eighth resistor R34 is provided between the power supply terminal V3 and the second output terminal E32 in the circuit configuration.

[0189] A voltage or current of a predetermined magnitude is applied to the power supply terminal V3, and the ground terminal G3 is connected to the ground.

[0190] The second detection circuit 3 may further include four diodes (not shown). The connections between the four diodes and the power supply terminal V3, the ground terminal G3, the first output terminal E31, and the second output terminal E32 are similar to the connections between the four diodes D1 to D4 and the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12 in the first embodiment.

[0191] The magnetic sensor 101 further includes a substrate 105. The power supply terminals V2 and V3, the ground terminals G2 and G3, the first output terminals E21 and E31, the second output terminals E22 and E32, and the first to eighth resistor units R21 to R24, R31 to R34 are provided on the substrate 105.

[0192] 31 shows an example of the arrangement of the first to eighth resistor portions R21 to R24 and R31 to R34. The first resistor portion R21 and the third resistor portion R23 are positioned such that, when viewed from the Z direction, the first resistor portion R21 overlaps the third resistor portion R23 when rotated 180° about a predetermined point C101 on the substrate 105. The second resistor portion R22 and the fourth resistor portion R24 are positioned such that, when viewed from the Z direction, the second resistor portion R22 overlaps the fourth resistor portion R24 when rotated 180° about the predetermined point C101. The predetermined point C101 may be the center of gravity of the surface of the substrate 105 when viewed from the Z direction.

[0193] The second resistor R22 is arranged symmetrically with the first resistor R21 about the XZ plane including the predetermined point C101. The fourth resistor R24 ​​is arranged symmetrically with the third resistor R23 about the XZ plane including the predetermined point C101.

[0194] The fifth resistor portion R31 and the seventh resistor portion R33 are positioned such that, when viewed from the Z direction, the fifth resistor portion R31 overlaps the seventh resistor portion R33 when rotated 180° around a predetermined point C101 on the substrate 105. In addition, the sixth resistor portion R32 and the eighth resistor portion R34 are positioned such that, when viewed from the Z direction, the sixth resistor portion R32 overlaps the eighth resistor portion R34 when rotated 180° around the predetermined point C101.

[0195] The sixth resistor R32 is arranged symmetrically with the fifth resistor R31 about the YZ plane including the predetermined point C101. The eighth resistor R34 is arranged symmetrically with the seventh resistor R33 about the YZ plane including the predetermined point C101.

[0196] Each of the first to eighth resistor sections R21 to R24, R31 to R34 includes a plurality of element arrays 60, a first terminal, and a second terminal, similar to the first to fourth resistor sections R11 to R14 in the first embodiment. Hereinafter, the first and second terminals of the first resistor section R21 will be denoted by reference numerals 21a and 21b, respectively, the first and second terminals of the second resistor section R22 will be denoted by reference numerals 22a and 22b, respectively, the first and second terminals of the third resistor section R23 will be denoted by reference numerals 23a and 23b, respectively, and the first and second terminals of the fourth resistor section R24 will be denoted by reference numerals 24a and 24b, respectively. In addition, the first and second terminals of the fifth resistor R31 are denoted by reference numerals 31a and 31b, the first and second terminals of the sixth resistor R32 are denoted by reference numerals 32a and 32b, the first and second terminals of the seventh resistor R33 are denoted by reference numerals 33a and 33b, and the first and second terminals of the eighth resistor R34 are denoted by reference numerals 34a and 34b.

[0197] The magnetic sensor 101 further includes a plurality of wiring layers 144 each made of a conductive material. The plurality of wiring layers 144 includes a wiring layer 144 connecting the first terminals 21a, 24a to a power supply terminal V2, a wiring layer 144 connecting the first terminals 22a, 23a to a ground terminal G2, a wiring layer 144 connecting the second terminals 21b, 22b to a first output terminal E21, and a wiring layer 144 connecting the second terminals 23b, 24b to a second output terminal E22. The multiple wiring layers 144 further include a wiring layer 144 connecting the first terminals 31a, 34a to a power supply terminal V3, a wiring layer 144 connecting the first terminals 32a, 33a to a ground terminal G3, a wiring layer 144 connecting the second terminals 31b, 32b to a first output terminal E31, and a wiring layer 144 connecting the second terminals 33b, 34b to a second output terminal E32.

[0198] The specific configuration and arrangement of the first resistor R21 are the same as those of the first sub-resistor R11A in the fourth embodiment. The specific configuration and arrangement of the second resistor R22 are the same as those of the first sub-resistor R12A in the fourth embodiment. The specific configuration and arrangement of the third resistor R23 are the same as those of the second sub-resistor R11B in the fourth embodiment. The specific configuration and arrangement of the fourth resistor R24 ​​are the same as those of the second sub-resistor R12B in the fourth embodiment.

[0199] The specific configuration and arrangement of the fifth resistor R31 are the same as those of the first sub-resistor R14A in the fourth embodiment. The specific configuration and arrangement of the sixth resistor R32 are the same as those of the first sub-resistor R13A in the fourth embodiment. The specific configuration and arrangement of the seventh resistor R33 are the same as those of the second sub-resistor R14B in the fourth embodiment. The specific configuration and arrangement of the eighth resistor R34 are the same as those of the second sub-resistor R13B in the fourth embodiment.

[0200] Other configurations, actions, and effects of this embodiment are the same as those of the first or fourth embodiment.

[0201] [Seventh embodiment] Next, a seventh embodiment of the present invention will be described with reference to Fig. 34. Fig. 34 is a cross-sectional view showing a magnetic sensor according to this embodiment.

[0202] The configuration of the magnetic sensor 1 according to this embodiment differs from that of the first embodiment in the following respects. In this embodiment, at least one of the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12 is arranged so as to overlap with a portion of the multiple MR elements 20 when viewed from the Z direction. In Fig. 34, reference numeral 45 denotes an electrode layer that constitutes any one of the power supply terminal V1, the ground terminal G1, the first output terminal E11, and the second output terminal E12.

[0203] The magnetic sensor 1 further includes an insulating layer 65 disposed around the plurality of MR elements 20 on the substrate 5, and an intermediate layer 66 provided between the insulating layer 65 and the electrode layer 45. The intermediate layer 66 is formed of, for example, an insulating material having a Poisson's ratio greater than that of the insulating material forming the insulating layer 65.

[0204] When compared with magnetic sensors 1 having the same planar shape, this embodiment allows a larger number of MR elements 20 to be used than when the electrode layer 45 does not overlap with a portion of the MR elements 20.

[0205] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0206] The present invention is not limited to the above-described embodiments and can be modified in various ways. For example, as long as the requirements of the claims are met, the number of the MR elements 20, the number of the MR elements 20 included in the element arrays 60, and the shape of the element arrays 60 are not limited to the examples shown in the embodiments and can be arbitrarily selected.

[0207] In the fourth modification of the first embodiment, one of the plurality of first MR elements 20A and the plurality of second MR elements 20B may be aligned in a direction parallel to the X direction, and the other may be aligned in a direction parallel to the Y direction. In this case, one of the plurality of MR elements 20 in the portion 60A connected to the third terminal 11c and the plurality of MR elements 20 in the portion 60B connected to the third terminal 11c may be aligned in a direction parallel to the X direction, and the other may be aligned in a direction parallel to the Y direction.

[0208] As described above, the magnetic sensor of the present invention includes a plurality of magnetoresistive effect elements, a plurality of element arrays each including a plurality of magnetoresistive effect elements connected in series by wiring, a first terminal, and a second terminal. The plurality of element arrays are connected in parallel to each other via the first terminal and the second terminal. The plurality of magnetoresistive effect elements are arranged in a first direction and a second direction intersecting the first direction. Each of the plurality of element arrays includes a first portion, a second portion, and a third portion provided in this order from the first terminal side. Each of the first portion and the third portion extends in the first direction. The second portion extends in the second direction. The number of elements included in the first portion among the plurality of elements varies depending on the element array to which the first portion belongs. The number of elements included in the second portion among the plurality of elements is the same regardless of the element array to which the second portion belongs. The number of elements included in the third portion among the plurality of elements varies depending on the element row to which the third portion belongs among the plurality of element rows.

[0209] In the magnetic sensor of the present invention, the plurality of magnetoresistive elements may include a plurality of first elements connected to the first terminal and a plurality of second elements connected to the second terminal. The plurality of first elements may be aligned in a line along the first direction or the second direction. The plurality of second elements may be aligned in a line along the first direction or the second direction. The plurality of first elements and the plurality of second elements may be aligned in the same direction.

[0210] In addition, in the magnetic sensor of the present invention, the sum of the number of elements included in the first portion among the plurality of elements and the number of elements included in the third portion may be the same regardless of the element row to which both the first portion and the third portion belong among the plurality of element rows.

[0211] The magnetic sensor of the present invention may further include a third terminal. The plurality of element arrays may include a portion connected in parallel by the first terminal and the third terminal, and a portion connected in parallel by the second terminal and the third terminal.

[0212] In the magnetic sensor of the present invention, each of the multiple magnetoresistive elements may include a magnetization pinned layer having a magnetization whose direction is fixed and a free layer having a magnetization that can change in response to an applied magnetic field. The free layer may have a magnetic vortex structure, and the center of the magnetic vortex structure may be configured to move in response to a target magnetic field. The magnetic sensor of the present invention may further include a first resistive unit and a second resistive unit connected to the first resistive unit. Each of the first resistive unit and the second resistive unit may include multiple magnetoresistive elements, multiple element arrays, a first terminal, and a second terminal. The magnetization of the magnetization pinned layer of each of the multiple magnetoresistive elements of the first resistive unit may include a component in a first magnetization direction. The magnetization of the magnetization pinned layer of each of the multiple magnetoresistive elements of the second resistive unit may include a component in a second magnetization direction opposite to the first magnetization direction.

[0213] The magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, a first output terminal, a second output terminal, a first resistor provided between the power supply terminal and the first output terminal, a second resistor provided between the ground terminal and the first output terminal, a third resistor provided between the ground terminal and the second output terminal, and a fourth resistor provided between the power supply terminal and the second output terminal. Each of the first resistor, the second resistor, the third resistor, and the fourth resistor may include a plurality of magnetoresistive elements, a plurality of element arrays, a first terminal, and a second terminal. The first resistor and the third resistor may be positioned such that, when viewed from a third direction perpendicular to each of the first direction and the second direction, the first resistor overlaps the third resistor when the first resistor is rotated 180° about a predetermined point. The second resistor portion and the fourth resistor portion may be positioned such that, when viewed from a third direction, the second resistor portion overlaps with the fourth resistor portion when rotated 180° about a predetermined point.

[0214] The magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, an output terminal, a first resistor portion provided between the power supply terminal and the output terminal, and a second resistor portion provided between the ground terminal and the output terminal. Each of the first resistor portion and the second resistor portion may include a first sub-resistance portion and a second sub-resistance portion located at different positions from each other. Each of the first sub-resistance portion of the first resistor portion, the second sub-resistance portion of the first resistor portion, the first sub-resistance portion of the second resistor portion, and the second sub-resistance portion of the second resistor portion may include multiple magnetoresistive elements, multiple element arrays, a first terminal, and a second terminal. In each of the first resistor portion and the second resistor portion, the first sub-resistance portion and the second sub-resistance portion may be positioned so that the first sub-resistance portion and the second sub-resistance portion overlap with the second sub-resistance portion when rotated 180° about a predetermined point when viewed from a third direction perpendicular to each of the first direction and the second direction.

[0215] The magnetic sensor of the present invention may further include a plurality of lower electrodes and a plurality of upper electrodes, each made of a conductive material. The plurality of magnetoresistive elements may be disposed on the plurality of lower electrodes. The plurality of upper electrodes may be disposed at intervals from the plurality of magnetoresistive elements in a third direction perpendicular to each of the first direction and the second direction. The plurality of magnetoresistive elements may include a plurality of first-type elements electrically connected to the plurality of upper electrodes and a plurality of second-type elements not electrically connected to the plurality of upper electrodes. The magnetic sensor of the present invention may further include a wiring layer made of a conductive material and disposed at intervals from the plurality of magnetoresistive elements in the third direction. The wiring layer may overlap a portion of the plurality of second-type elements when viewed from the third direction.

[0216] The magnetic sensor of the present invention may further include an electrode layer made of a conductive material. The plurality of magnetoresistive effect elements may include a plurality of specific elements electrically connected to the electrode layer. The plurality of specific elements may be arranged in a first direction and a second direction. The magnetic sensor of the present invention may further include a plurality of via electrodes made of a conductive material. The plurality of specific elements may be connected to the electrode layer through a plurality of via electrodes. [Explanation of symbols]

[0217] 1...magnetic sensor, 5...substrate, 11a, 12a, 13a, 14a...first terminal, 11b, 12b, 13b, 14b...second terminal, 20...MR element, 20A...first MR element, 20B...second MR element, 21...magnetization fixed layer, 21m...magnetization, 22...gap layer, 23...free layer, 23m...magnetization, 40...wiring, 41...lower electrode, 42...upper electrode, 43...via electrode, 44...wiring layer, 60...element array, 60a1...first portion, 60a2...third portion, 60b...second portion, D1 to D4...diodes, E11, E12...output terminal, G1...ground terminal, MF...target magnetic field, R11 to R14...resistor portion, V1...power supply terminal.

Claims

1. A plurality of magnetoresistive elements; a plurality of element rows each including a wiring and a plurality of elements among the plurality of magnetoresistive effect elements connected in series by the wiring; a first terminal; a second terminal; the plurality of element rows are connected in parallel to one another by the first terminals and the second terminals; the plurality of magnetoresistive effect elements are arranged in a first direction and in a second direction intersecting the first direction, each of the plurality of element rows includes a first portion, a second portion, and a third portion provided in this order from the first terminal side; each of the first portion and the third portion extends in the first direction; the second portion extends in the second direction; the number of elements included in the first portion among the plurality of elements varies depending on the element row to which the first portion belongs among the plurality of element rows; the number of elements included in the second portion among the plurality of elements is the same regardless of the element row to which the second portion belongs among the plurality of element rows; The magnetic sensor according to claim 1, wherein the number of elements included in the third portion among the plurality of elements varies depending on the element row to which the third portion belongs among the plurality of element rows.

2. the plurality of magnetoresistive effect elements include a plurality of first elements connected to the first terminal and a plurality of second elements connected to the second terminal; the plurality of first elements are aligned in a line along the first direction or the second direction, 2. The magnetic sensor according to claim 1, wherein the plurality of second elements are aligned in a line along the first direction or the second direction.

3. 3. The magnetic sensor according to claim 2, wherein the plurality of first elements and the plurality of second elements are aligned in the same direction.

4. 2. The magnetic sensor according to claim 1, wherein the sum of the number of elements included in the first portion and the number of elements included in the third portion among the plurality of elements is the same regardless of the element row to which both the first portion and the third portion belong among the plurality of element rows.

5. Further, a third terminal is provided, 2. The magnetic sensor according to claim 1, wherein the plurality of element arrays include a portion connected in parallel by the first terminal and the third terminal, and a portion connected in parallel by the second terminal and the third terminal.

6. 2. The magnetic sensor according to claim 1, wherein each of the plurality of magnetoresistive elements includes a magnetization fixed layer having a magnetization direction that is fixed, and a free layer having a magnetization that can change in response to an applied magnetic field.

7. 7. The magnetic sensor according to claim 6, wherein the free layer has a magnetic vortex structure, and the center of the magnetic vortex structure is configured to move in response to an object magnetic field.

8. Further, a first resistor portion; a second resistor connected to the first resistor, each of the first resistance unit and the second resistance unit includes the plurality of magnetoresistive effect elements, the plurality of element arrays, the first terminal, and the second terminal; the magnetization of the magnetization fixed layer of each of the plurality of magnetoresistive effect elements of the first resistance unit includes a component in a first magnetization direction, 7. The magnetic sensor according to claim 6, wherein the magnetization of the magnetization fixed layer of each of the plurality of magnetoresistive effect elements of the second resistance section includes a component of a second magnetization direction opposite to the first magnetization direction.

9. Furthermore, a power terminal; A ground terminal, a first output terminal; a second output terminal; and a first resistor portion provided between the power supply terminal and the first output terminal; a second resistor portion provided between the ground terminal and the first output terminal; a third resistor portion provided between the ground terminal and the second output terminal; a fourth resistor portion provided between the power supply terminal and the second output terminal, each of the first resistance unit, the second resistance unit, the third resistance unit, and the fourth resistance unit includes the plurality of magnetoresistive effect elements, the plurality of element arrays, the first terminal, and the second terminal; the first resistance portion and the third resistance portion are in a positional relationship such that, when viewed from a third direction perpendicular to each of the first direction and the second direction, the first resistance portion overlaps the third resistance portion when the first resistance portion is rotated 180° about a predetermined point; 2. The magnetic sensor according to claim 1, wherein the second resistance portion and the fourth resistance portion are positioned such that, when viewed from the third direction, the second resistance portion overlaps with the fourth resistance portion when the second resistance portion is rotated 180 degrees around the specified point.

10. Furthermore, a power terminal; A ground terminal, An output terminal; a first resistor portion provided between the power supply terminal and the output terminal; a second resistor portion provided between the ground terminal and the output terminal, each of the first resistor portion and the second resistor portion includes a first sub-resistance portion and a second sub-resistance portion that are arranged at positions different from each other; the first sub-resistance portion of the first resistance portion, the second sub-resistance portion of the first resistance portion, the first sub-resistance portion of the second resistance portion, and the second sub-resistance portion of the second resistance portion each include the plurality of magnetoresistive elements, the plurality of element arrays, the first terminal, and the second terminal; 2. The magnetic sensor according to claim 1, wherein in each of the first resistance portion and the second resistance portion, the first sub-resistance portion and the second sub-resistance portion are positioned such that when the first sub-resistance portion is rotated 180° about a predetermined point, it overlaps with the second sub-resistance portion when viewed from a third direction perpendicular to each of the first direction and the second direction.

11. Further, a plurality of lower electrodes and a plurality of upper electrodes each made of a conductive material are provided, the plurality of magnetoresistive elements are disposed on the plurality of lower electrodes, the plurality of upper electrodes are arranged at intervals with respect to the plurality of magnetoresistive elements in a third direction orthogonal to each of the first direction and the second direction, 2. The magnetic sensor according to claim 1, wherein the plurality of magnetoresistive elements include a plurality of first-type elements electrically connected to the plurality of upper electrodes and a plurality of second-type elements not electrically connected to the plurality of upper electrodes.

12. further comprising a wiring layer made of a conductive material and arranged at intervals from the plurality of magnetoresistive effect elements in the third direction; 12. The magnetic sensor according to claim 11, wherein the wiring layer overlaps with a portion of the plurality of second-type elements when viewed from the third direction.

13. further comprising an electrode layer made of a conductive material, the plurality of magnetoresistive effect elements include a plurality of specific elements electrically connected to the electrode layers; 2. The magnetic sensor according to claim 1, wherein the plurality of specific elements are arranged in the first direction and in the second direction.

14. Further, a plurality of via electrodes made of a conductive material are provided, 14. The magnetic sensor according to claim 13, wherein the plurality of specific elements are connected to the electrode layer through the plurality of via electrodes.

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