Power supply control device, switching power supply, signal transmission device, electronic device, and vehicle

Abstract

To softly start an output voltage without depending on a power-on sequence.SOLUTION: A power-supply control device 410 controls a primary current Ip of an insulated switching power source 400 which generates an output-voltage V0 from an input-voltage V2. A power source control device 410 includes an overcurrent protection circuit 412 for limiting a current feedback signal CS corresponding to a primary current Ip to an overcurrent limit Vth or less, and a soft start circuit 413 for raising the overcurrent limit Vth from an initial 0 to a first set level VssH after a power source voltage V1 is applied to the power source control device 410. The soft start circuit 413 repeats raising the overcurrent limit Vth and lowering the overcurrent limit Vth to the initial level 0 or a second setting level VssL (0 <VssL <VssH), or temporarily stops raising the overcurrent limit Vth at a third setting level VssM (0 <VssM <VssH), until the feedback signal FB corresponding to the voltage V2 is detected.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present disclosure relates to, for example, a power supply control device, a switching power supply, a signal transmission device, an electronic device, and a vehicle. [Background technology]

[0002] Conventionally, signal transmission devices that transmit signals between a primary circuit system and a secondary circuit system while electrically insulating the primary circuit system from the secondary circuit system have been used in various applications (such as power supply devices or motor drive devices).

[0003] An example of the prior art related to the above is Patent Document 1 by the applicant of the present application. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2022 / 070944

[0005] [overview] However, conventional switching power supplies, particularly power supply control devices that control them, have room for improvement in terms of soft starting the output voltage.

[0006] For example, a power supply control device according to the present disclosure is configured to control the primary current of a switching power supply that generates an output voltage for a secondary circuit system from an input voltage for the primary circuit system while isolating the primary circuit system from a secondary circuit system, and includes an overcurrent protection circuit configured to limit the primary current to an overcurrent limit value or less, and a soft start circuit configured to increase the overcurrent limit value from an initial value to a first set value after a power supply voltage is applied to the power supply control device, and the soft start circuit repeatedly increases the overcurrent limit value and decreases it to the initial value or a second set value set between the initial value and the first set value, or temporarily suspends the increase of the overcurrent limit value at a third set value set between the initial value and the first set value, until a feedback signal corresponding to the output voltage is detected. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing the basic configuration of a signal transmission device. [Figure 2] FIG. 2 is a diagram showing the basic structure of a transformer chip. [Figure 3] FIG. 3 is a perspective view of a semiconductor device used as a two-channel transformer chip. [Figure 4] FIG. 4 is a plan view of the semiconductor device shown in FIG. [Figure 5] FIG. 5 is a plan view showing a layer in which a low potential coil is formed in the semiconductor device of FIG. [Figure 6] FIG. 6 is a plan view showing a layer in which a high-potential coil is formed in the semiconductor device of FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VIII-VIII shown in FIG. [Figure 8] FIG. 8 is an enlarged view (isolation structure) of region XIII shown in FIG. [Figure 9] FIG. 9 is a diagram schematically illustrating an example of the layout of a transformer chip. [Figure 10] FIG. 10 is a diagram showing a first embodiment of a switching power supply. [Figure 11] FIG. 11 is a diagram showing a second embodiment of the switching power supply. [Figure 12] FIG. 12 is a diagram showing an example of successful soft start operation (V0→V1). [Figure 13] FIG. 13 is a diagram showing an example of a failed soft start operation (V1→V0). [Figure 14] FIG. 14 is a diagram showing a third embodiment of the switching power supply. [Figure 15] FIG. 15 is a diagram (flow) showing a first example of the soft start operation. [Figure 16] FIG. 16 is a diagram (timing) showing a first example of the soft start operation. [Figure 17] FIG. 17 is a diagram (flow) showing a second example of the soft start operation. [Figure 18] FIG. 18 is a diagram (timing) showing a second example of the soft start operation. [Figure 19] FIG. 19 is a diagram illustrating an example of the configuration of the detection circuit. [Figure 20] FIG. 20 is a diagram illustrating an example of the detection operation. [Figure 21] FIG. 21 is a diagram showing a fourth embodiment of the switching power supply. [Figure 22] FIG. 22 is a diagram showing the exterior of the vehicle.

[0008] [Detailed explanation] <Signal transmission device (basic configuration)> 1 is a diagram showing the basic configuration of a signal transmission device. The signal transmission device 200 of this configuration example is a semiconductor integrated circuit device (a so-called insulated gate driver IC) that transmits a pulse signal from the primary circuit system 200p to the secondary circuit system 200s while insulating the primary circuit system 200p (VCC1-GND1 system) from the secondary circuit system 200s (VCC2-GND2 system) and drives the gate of a switch element (not shown) provided in the secondary circuit system 200s. For example, the signal transmission device 200 is configured by sealing a controller chip 210, a driver chip 220, and a transformer chip 230 in a single package.

[0009] The controller chip 210 is a semiconductor chip that operates by receiving a supply of power supply voltage VCC1 (for example, up to 7 V with respect to GND1). The controller chip 210 has integrated therein, for example, a pulse transmission circuit 211 and buffers 212 and 213.

[0010] The pulse transmitting circuit 211 is a pulse generator that generates transmission pulse signals S11 and S21 in response to the input pulse signal IN. More specifically, when the pulse transmitting circuit 211 notifies that the input pulse signal IN is at a high level, it pulse-drives the transmission pulse signal S11 (outputting a single or multiple transmission pulses), and when it notifies that the input pulse signal IN is at a low level, it pulse-drives the transmission pulse signal S21. That is, the pulse transmitting circuit 211 pulse-drives either the transmission pulse signals S11 or S21 in response to the logic level of the input pulse signal IN.

[0011] The buffer 212 receives the transmission pulse signal S11 from the pulse transmission circuit 211 and pulse-drives the transformer chip 230 (specifically, the transformer 231).

[0012] The buffer 213 receives the transmission pulse signal S21 from the pulse transmission circuit 211 and pulse-drives the transformer chip 230 (specifically, the transformer 232).

[0013] The driver chip 220 is a semiconductor chip that operates by receiving a supply of power supply voltage VCC2 (for example, up to 30 V with respect to GND2). The driver chip 220 has buffers 221 and 222, a pulse receiving circuit 223, and a driver 224 integrated therein.

[0014] The buffer 221 shapes the waveform of the received pulse signal S12 induced in the transformer chip 230 (specifically, the transformer 231) and outputs the result to the pulse receiving circuit 223.

[0015] The buffer 222 shapes the waveform of the received pulse signal S22 induced in the transformer chip 230 (specifically, the transformer 232) and outputs the result to the pulse receiving circuit 223.

[0016] The pulse receiving circuit 223 generates the output pulse signal OUT by driving the driver 224 in response to the received pulse signals S12 and S22 input via the buffers 221 and 222. More specifically, the pulse receiving circuit 223 drives the driver 224 so that the output pulse signal OUT rises to a high level in response to the pulse driving of the received pulse signal S12, and the output pulse signal OUT falls to a low level in response to the pulse driving of the received pulse signal S22. In other words, the pulse receiving circuit 223 switches the logic level of the output pulse signal OUT in response to the logic level of the input pulse signal IN. Note that an RS flip-flop, for example, can be suitably used as the pulse receiving circuit 223.

[0017] The driver 224 generates an output pulse signal OUT based on the drive control of the pulse receiving circuit 223 .

[0018] The transformer chip 230 provides DC insulation between the controller chip 210 and the driver chip 220 using transformers 231 and 232, and outputs transmission pulse signals S11 and S21 input from the pulse transmission circuit 211 as reception pulse signals S12 and S22, respectively, to the pulse reception circuit 223. In this specification, "DC-insulated" means that the objects to be insulated are not connected by a conductor.

[0019] More specifically, the transformer 231 outputs a reception pulse signal S12 from the secondary coil 231s in response to a transmission pulse signal S11 input to the primary coil 231p, while the transformer 232 outputs a reception pulse signal S22 from the secondary coil 232s in response to a transmission pulse signal S21 input to the primary coil 232p.

[0020] In this way, due to the characteristics of the spiral coil used for insulated communication, the input pulse signal IN is separated into two transmission pulse signals S11 and S21 (corresponding to the rise signal and fall signal), and then transmitted from the primary circuit system 200p to the secondary circuit system 200s via two transformers 231 and 232.

[0021] In addition, the signal transmission device 200 of this configuration example has an independent transformer chip 230 equipped with only transformers 231 and 232, in addition to the controller chip 210 and the driver chip 220, and these three chips are sealed in a single package.

[0022] With this configuration, the controller chip 210 and the driver chip 220 can both be formed using a general low to medium voltage withstand process (withstand voltage of several volts to several tens of volts), eliminating the need to use a dedicated high voltage withstand process (withstand voltage of several kV), thereby enabling reduction in manufacturing costs.

[0023] The signal transmission device 200 can be suitably used, for example, in a power supply device or a motor drive device for on-board equipment mounted in a vehicle. The above-mentioned vehicles include not only engine vehicles but also electric vehicles (battery electric vehicles (BEVs), hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs) / plug-in hybrid vehicles (PHVs), or xEVs such as fuel cell electric vehicles (FCEVs) / FCVs (fuel cell electric vehicles)).

[0024] <Trans chip (basic structure)> Next, the basic structure of transformer chip 230 will be described. Fig. 2 is a diagram showing the basic structure of transformer chip 230. In transformer chip 230 shown in this figure, transformer 231 includes primary coil 231p and secondary coil 231s that face each other in the vertical direction. Transformer 232 includes primary coil 232p and secondary coil 232s that face each other in the vertical direction.

[0025] The primary coils 231p and 232p are both formed on a first wiring layer (lower layer) 230a of the transformer chip 230. The secondary coils 231s and 232s are both formed on a second wiring layer (upper layer in this figure) 230b of the transformer chip 230. The secondary coil 231s is disposed directly above the primary coil 231p and faces the primary coil 231p. The secondary coil 232s is disposed directly above the primary coil 232p and faces the primary coil 232p.

[0026] The primary coil 231p is laid spirally, starting from a first end connected to the internal terminal X21, so as to surround the periphery of the internal terminal X21 in a clockwise direction, and its second end corresponding to its end point is connected to the internal terminal X22. Meanwhile, the primary coil 232p is laid spirally, starting from a first end connected to the internal terminal X23, so as to surround the periphery of the internal terminal X23 in a counterclockwise direction, and its second end corresponding to its end point is connected to the internal terminal X22. The internal terminals X21, X22, and X23 are linearly arranged in the order shown in the figure.

[0027] The internal terminal X21 is connected to the external terminal T21 on the second layer 230b via a conductive wiring Y21 and a via Z21. The internal terminal X22 is connected to the external terminal T22 on the second layer 230b via a conductive wiring Y22 and a via Z22. The internal terminal X23 is connected to the external terminal T23 on the second layer 230b via a conductive wiring Y23 and a via Z23. The external terminals T21 to T23 are arranged linearly and are used for wire bonding with the controller chip 210.

[0028] The secondary coil 231s is laid in a spiral shape, starting from a first end connected to the external terminal T24 and surrounding the external terminal T24 in a counterclockwise direction, with a second end corresponding to the end point connected to the external terminal T25. Meanwhile, the secondary coil 232s is laid in a spiral shape, starting from a first end connected to the external terminal T26 and surrounding the external terminal T26 in a clockwise direction, with a second end corresponding to the end point connected to the external terminal T25. The external terminals T24, T25, and T26 are arranged linearly in the order shown in the figure, and are used for wire bonding with the driver chip 220.

[0029] The secondary coils 231s and 232s are AC-connected to the primary coils 231p and 232p by magnetic coupling, and are DC-insulated from the primary coils 231p and 232p, respectively. That is, the driver chip 220 is AC-connected to the controller chip 210 via the transformer chip 230, and is DC-insulated from the controller chip 210 by the transformer chip 230.

[0030] <Transformer chip (2-channel type)> FIG. 3 is a perspective view showing a semiconductor device 5 used as a two-channel transformer chip. FIG. 4 is a plan view of the semiconductor device 5 shown in FIG. 3. FIG. 5 is a plan view showing a layer in which a low-potential coil 22 (corresponding to the primary coil of the transformer) is formed in the semiconductor device 5 shown in FIG. 3. FIG. 6 is a plan view showing a layer in which a high-potential coil 23 (corresponding to the secondary coil of the transformer) is formed in the semiconductor device 5 shown in FIG. 3. FIG. 7 is a cross-sectional view taken along line VIII-VIII shown in FIG. 6. FIG. 8 is an enlarged view of region XIII shown in FIG. 7, showing an isolation structure 130.

[0031] 3 to 7, semiconductor device 5 includes a rectangular parallelepiped semiconductor chip 41. Semiconductor chip 41 includes at least one of silicon, a wide bandgap semiconductor, and a compound semiconductor.

[0032] The wide bandgap semiconductor is a semiconductor with a bandgap greater than that of silicon (approximately 1.12 eV). The bandgap of the wide bandgap semiconductor is preferably 2.0 eV or greater. The wide bandgap semiconductor may be silicon carbide (SiC). The compound semiconductor may be a III-V compound semiconductor. The compound semiconductor may include at least one of AlN (aluminum nitride), InN (indium nitride), GaN (gallium nitride), and GaAs (gallium arsenide).

[0033] In this embodiment, the semiconductor chip 41 includes a silicon semiconductor substrate. The semiconductor chip 41 may also be an epitaxial substrate having a layered structure including a silicon semiconductor substrate and a silicon epitaxial layer. The conductivity type of the semiconductor substrate may be n-type or p-type. The epitaxial layer may be n-type or p-type.

[0034] The semiconductor chip 41 has a first main surface 42 on one side, a second main surface 43 on the other side, and chip sidewalls 44A to 44D connecting the first main surface 42 and the second main surface 43. The first main surface 42 and the second main surface 43 are formed in a quadrangular shape (rectangular in this embodiment) in a plan view seen from their normal direction Z (hereinafter simply referred to as "plan view").

[0035] The chip sidewalls 44A to 44D include a first chip sidewall 44A, a second chip sidewall 44B, a third chip sidewall 44C, and a fourth chip sidewall 44D. The first chip sidewall 44A and the second chip sidewall 44B form the long sides of the semiconductor chip 41. The first chip sidewall 44A and the second chip sidewall 44B extend along the first direction X and face the second direction Y. The third chip sidewall 44C and the fourth chip sidewall 44D form the short sides of the semiconductor chip 41. The third chip sidewall 44C and the fourth chip sidewall 44D extend in the second direction Y and face the first direction X. The chip sidewalls 44A to 44D are made of ground surfaces.

[0036] The semiconductor device 5 further includes an insulating layer 51 formed on the first main surface 42 of the semiconductor chip 41. The insulating layer 51 has an insulating main surface 52 and insulating side walls 53A to 53D. The insulating main surface 52 is formed in a quadrangular shape (rectangular in this embodiment) that matches the first main surface 42 in a plan view. The insulating main surface 52 extends parallel to the first main surface 42.

[0037] The insulating side walls 53A to 53D include a first insulating side wall 53A, a second insulating side wall 53B, a third insulating side wall 53C, and a fourth insulating side wall 53D. The insulating side walls 53A to 53D extend from the periphery of the insulating main surface 52 toward the semiconductor chip 41 and are continuous with the chip side walls 44A to 44D. Specifically, the insulating side walls 53A to 53D are formed flush with the chip side walls 44A to 44D. The insulating side walls 53A to 53D form ground surfaces that are flush with the chip side walls 44A to 44D.

[0038] The insulating layer 51 has a multilayer insulating laminate structure including a bottom insulating layer 55, a top insulating layer 56, and a plurality of (11 in this embodiment) interlayer insulating layers 57. The bottom insulating layer 55 is an insulating layer that directly covers the first main surface 42. The top insulating layer 56 is an insulating layer that forms the insulating main surface 52. The plurality of interlayer insulating layers 57 are insulating layers interposed between the bottom insulating layer 55 and the top insulating layer 56. In this embodiment, the bottom insulating layer 55 has a single-layer structure containing silicon oxide. In this embodiment, the top insulating layer 56 also has a single-layer structure containing silicon oxide. The thickness of the bottom insulating layer 55 and the top insulating layer 56 may each be 1 μm or more and 3 μm or less (for example, about 2 μm).

[0039] Each of the multiple interlayer insulating layers 57 has a stacked structure including a first insulating layer 58 on the side of the bottom insulating layer 55 and a second insulating layer 59 on the side of the top insulating layer 56. The first insulating layer 58 may contain silicon nitride. The first insulating layer 58 is formed as an etching stopper layer for the second insulating layer 59. The thickness of the first insulating layer 58 may be 0.1 μm or more and 1 μm or less (for example, approximately 0.3 μm).

[0040] The second insulating layer 59 is formed on the first insulating layer 58. It contains an insulating material different from that of the first insulating layer 58. The second insulating layer 59 may contain silicon oxide. The thickness of the second insulating layer 59 may be 1 μm or more and 3 μm or less (for example, approximately 2 μm). The thickness of the second insulating layer 59 is preferably greater than the thickness of the first insulating layer 58.

[0041] The total thickness DT of the insulating layers 51 may be 5 μm or more and 50 μm or less. The total thickness DT of the insulating layers 51 and the number of stacked interlayer insulating layers 57 are arbitrary and are adjusted according to the dielectric strength voltage (dielectric breakdown resistance) to be achieved. Furthermore, the insulating materials of the bottom insulating layer 55, the top insulating layer 56, and the interlayer insulating layers 57 are arbitrary and are not limited to a specific insulating material.

[0042] The semiconductor device 5 includes a first functional device 45 formed on an insulating layer 51. The first functional device 45 includes one or more (in this embodiment, multiple) transformers 21 (corresponding to the aforementioned transformers). In other words, the semiconductor device 5 is a multi-channel device including multiple transformers 21. The multiple transformers 21 are formed inside the insulating layer 51 at intervals from the insulating side walls 53A to 53D. The multiple transformers 21 are formed at intervals in the first direction X.

[0043] Specifically, the multiple transformers 21 include a first transformer 21A, a second transformer 21B, a third transformer 21C, and a fourth transformer 21D, which are formed in this order from the insulating side wall 53C side toward the insulating side wall 53D side in a plan view. The multiple transformers 21A to 21D each have a similar structure. The following description will be given using the structure of the first transformer 21A as an example. The description of the structure of the first transformer 21A applies mutatis mutandis to the structures of the second transformer 21B, third transformer 21C, and fourth transformer 21D, and will be omitted.

[0044] 5 to 7, the first transformer 21A includes a low-potential coil 22 and a high-potential coil 23. The low-potential coil 22 is formed in an insulating layer 51. The high-potential coil 23 is formed in the insulating layer 51 so as to face the low-potential coil 22 in the normal direction Z. In this embodiment, the low-potential coil 22 and the high-potential coil 23 are formed in a region sandwiched between a lowermost insulating layer 55 and an uppermost insulating layer 56 (i.e., a plurality of interlayer insulating layers 57).

[0045] The low-potential coil 22 is formed on the side of the lowest insulating layer 55 (semiconductor chip 41) within the insulating layer 51, and the high-potential coil 23 is formed on the side of the highest insulating layer 56 (insulating main surface 52) relative to the low-potential coil 22 within the insulating layer 51. In other words, the high-potential coil 23 faces the semiconductor chip 41 with the low-potential coil 22 sandwiched between them. The low-potential coil 22 and the high-potential coil 23 may be disposed in any desired locations. Furthermore, it is sufficient that the high-potential coil 23 faces the low-potential coil 22 with one or more interlayer insulating layers 57 sandwiched between them.

[0046] The distance between the low-potential coil 22 and the high-potential coil 23 (i.e., the number of layers of the interlayer insulating layers 57) is adjusted appropriately depending on the dielectric strength and electric field strength between the low-potential coil 22 and the high-potential coil 23. In this embodiment, the low-potential coil 22 is formed on the third interlayer insulating layer 57 counting from the bottom insulating layer 55 side. In this embodiment, the high-potential coil 23 is formed on the first interlayer insulating layer 57 counting from the top insulating layer 56 side.

[0047] The low-potential coil 22 is embedded in the interlayer insulating layer 57, penetrating the first insulating layer 58 and the second insulating layer 59. The low-potential coil 22 includes a first inner end 24, a first outer end 25, and a first spiral portion 26 that is wound in a spiral shape between the first inner end 24 and the first outer end 25. The first spiral portion 26 is wound in a spiral shape that extends in an elliptical shape (oval shape) in a plan view. The portion that forms the innermost periphery of the first spiral portion 26 defines a first inner region 66 that is elliptical in a plan view.

[0048] The number of turns of the first helical portion 26 may be 5 or more and 30 or less. The width of the first helical portion 26 may be 0.1 μm or more and 5 μm or less. The width of the first helical portion 26 is preferably 1 μm or more and 3 μm or less. The width of the first helical portion 26 is defined by the width in a direction perpendicular to the helical direction. The first winding pitch of the first helical portion 26 may be 0.1 μm or more and 5 μm or less. The first winding pitch is preferably 1 μm or more and 3 μm or less. The first winding pitch is defined by the distance between two adjacent portions of the first helical portion 26 in a direction perpendicular to the helical direction.

[0049] The winding shape of the first spiral portion 26 and the planar shape of the first inner region 66 are arbitrary and are not limited to the shapes shown in Fig. 5 etc. The first spiral portion 26 may be wound in a polygonal shape such as a triangular shape or a quadrangular shape, or a circular shape in a planar view. The first inner region 66 may be partitioned into a polygonal shape such as a triangular shape or a quadrangular shape, or a circular shape in a planar view, depending on the winding shape of the first spiral portion 26.

[0050] The low-potential coil 22 may include at least one of titanium, titanium nitride, copper, aluminum, and tungsten. The low-potential coil 22 may have a layered structure including a barrier layer and a body layer. The barrier layer defines a recess space in the interlayer insulating layer 57. The barrier layer may include at least one of titanium and titanium nitride. The body layer may include at least one of copper, aluminum, and tungsten.

[0051] The high-potential coil 23 is embedded in the interlayer insulating layer 57, penetrating the first insulating layer 58 and the second insulating layer 59. The high-potential coil 23 includes a second inner end 27, a second outer end 28, and a second spiral portion 29 wound in a spiral shape between the second inner end 27 and the second outer end 28. The second spiral portion 29 is wound in a spiral shape that extends in an elliptical (oval) shape in a planar view. In this embodiment, the portion forming the innermost periphery of the second spiral portion 29 defines a second inner region 67 that is elliptical in a planar view. The second inner region 67 of the second spiral portion 29 faces the first inner region 66 of the first spiral portion 26 in the normal direction Z.

[0052] The number of turns of the second helical portion 29 may be 5 or more and 30 or less. The number of turns of the second helical portion 29 relative to the number of turns of the first helical portion 26 is adjusted according to the voltage value to be boosted. The number of turns of the second helical portion 29 preferably exceeds the number of turns of the first helical portion 26. Of course, the number of turns of the second helical portion 29 may be less than the number of turns of the first helical portion 26 or may be equal to the number of turns of the first helical portion 26.

[0053] The width of the second helical portion 29 may be 0.1 μm or more and 5 μm or less. The width of the second helical portion 29 is preferably 1 μm or more and 3 μm or less. The width of the second helical portion 29 is defined by the width in a direction perpendicular to the helical direction. The width of the second helical portion 29 is preferably equal to the width of the first helical portion 26.

[0054] The second winding pitch of the second helical portion 29 may be 0.1 μm or more and 5 μm or less. The second winding pitch is preferably 1 μm or more and 3 μm or less. The second winding pitch is defined by the distance between two adjacent portions of the second helical portion 29 in a direction perpendicular to the helical direction. The second winding pitch is preferably equal to the first winding pitch of the first helical portion 26.

[0055] The winding shape of the second spiral portion 29 and the planar shape of the second inner region 67 are arbitrary and are not limited to the form shown in Fig. 6 etc. The second spiral portion 29 may be wound in a polygonal shape such as a triangular shape or a quadrangular shape, or a circular shape in a planar view. The second inner region 67 may be partitioned into a polygonal shape such as a triangular shape or a quadrangular shape, or a circular shape in a planar view, depending on the winding shape of the second spiral portion 29.

[0056] The high-potential coil 23 is preferably formed from the same conductive material as the low-potential coil 22. That is, like the low-potential coil 22, the high-potential coil 23 preferably includes a barrier layer and a main body layer.

[0057] 4, the semiconductor device 5 includes a plurality of (12 in this figure) low potential terminals 11 and a plurality of (12 in this figure) high potential terminals 12. The plurality of low potential terminals 11 are electrically connected to the low potential coils 22 of the corresponding transformers 21A to 21D, respectively. The plurality of high potential terminals 12 are electrically connected to the high potential coils 23 of the corresponding transformers 21A to 21D, respectively.

[0058] The plurality of low potential terminals 11 are formed on the insulating main surface 52 of the insulating layer 51. Specifically, the plurality of low potential terminals 11 are formed in an area on the insulating sidewall 53B side at intervals in the second direction Y from the plurality of transformers 21A to 21D, and are arranged at intervals in the first direction X.

[0059] The plurality of low potential terminals 11 include a first low potential terminal 11A, a second low potential terminal 11B, a third low potential terminal 11C, a fourth low potential terminal 11D, a fifth low potential terminal 11E, and a sixth low potential terminal 11F. In this embodiment, two of each of the plurality of low potential terminals 11A to 11F are formed. The number of the plurality of low potential terminals 11A to 11F is arbitrary.

[0060] The first low potential terminal 11A faces the first transformer 21A in the second direction Y in plan view. The second low potential terminal 11B faces the second transformer 21B in the second direction Y in plan view. The third low potential terminal 11C faces the third transformer 21C in the second direction Y in plan view. The fourth low potential terminal 11D faces the fourth transformer 21D in the second direction Y in plan view. The fifth low potential terminal 11E is formed in a region between the first low potential terminal 11A and the second low potential terminal 11B in plan view. The sixth low potential terminal 11F is formed in a region between the third low potential terminal 11C and the fourth low potential terminal 11D in plan view.

[0061] The first low potential terminal 11A is electrically connected to the first inner end 24 of the first transformer 21A (low potential coil 22). The second low potential terminal 11B is electrically connected to the first inner end 24 of the second transformer 21B (low potential coil 22). The third low potential terminal 11C is electrically connected to the first inner end 24 of the third transformer 21C (low potential coil 22). The fourth low potential terminal 11D is electrically connected to the first inner end 24 of the fourth transformer 21D (low potential coil 22).

[0062] The fifth low potential terminal 11E is electrically connected to the first outer end 25 of the first transformer 21A (low potential coil 22) and the first outer end 25 of the second transformer 21B (low potential coil 22). The sixth low potential terminal 11F is electrically connected to the first outer end 25 of the third transformer 21C (low potential coil 22) and the first outer end 25 of the fourth transformer 21D (low potential coil 22).

[0063] The plurality of high potential terminals 12 are formed on the insulating main surface 52 of the insulating layer 51 at intervals from the plurality of low potential terminals 11. Specifically, the plurality of high potential terminals 12 are formed in an area on the insulating sidewall 53A side at intervals from the plurality of low potential terminals 11 in the second direction Y, and are arranged at intervals in the first direction X.

[0064] The multiple high potential terminals 12 are each formed in an area close to the corresponding transformer 21A to 21D in a plan view. The high potential terminals 12 being close to the transformers 21A to 21D means that the distance between the high potential terminal 12 and the transformer 21 in a plan view is less than the distance between the low potential terminal 11 and the high potential terminal 12.

[0065] Specifically, the multiple high potential terminals 12 are formed at intervals along the first direction X so as to face the multiple transformers 21A to 21D along the first direction X in a plan view. More specifically, the multiple high potential terminals 12 are formed at intervals along the first direction X so as to be located in the second inner region 67 of the high potential coil 23 and in a region between adjacent high potential coils 23 in a plan view. As a result, the multiple high potential terminals 12 are arranged in a line with the multiple transformers 21A to 21D in the first direction X in a plan view.

[0066] The plurality of high potential terminals 12 include a first high potential terminal 12A, a second high potential terminal 12B, a third high potential terminal 12C, a fourth high potential terminal 12D, a fifth high potential terminal 12E, and a sixth high potential terminal 12F. In this embodiment, two of each of the plurality of high potential terminals 12A to 12F are formed. The number of the plurality of high potential terminals 12A to 12F is arbitrary.

[0067] The first high potential terminal 12A is formed in the second inner region 67 of the first transformer 21A (high potential coil 23) in a plan view. The second high potential terminal 12B is formed in the second inner region 67 of the second transformer 21B (high potential coil 23) in a plan view. The third high potential terminal 12C is formed in the second inner region 67 of the third transformer 21C (high potential coil 23) in a plan view. The fourth high potential terminal 12D is formed in the second inner region 67 of the fourth transformer 21D (high potential coil 23) in a plan view. The fifth high potential terminal 12E is formed in the region between the first transformer 21A and the second transformer 21B in a plan view. The sixth high potential terminal 12F is formed in the region between the third transformer 21C and the fourth transformer 21D in a plan view.

[0068] The first high potential terminal 12A is electrically connected to the second inner end 27 of the first transformer 21A (high potential coil 23). The second high potential terminal 12B is electrically connected to the second inner end 27 of the second transformer 21B (high potential coil 23). The third high potential terminal 12C is electrically connected to the second inner end 27 of the third transformer 21C (high potential coil 23). The fourth high potential terminal 12D is electrically connected to the second inner end 27 of the fourth transformer 21D (high potential coil 23).

[0069] The fifth high potential terminal 12E is electrically connected to the second outer end 28 of the first transformer 21A (high potential coil 23) and the second outer end 28 of the second transformer 21B (high potential coil 23). The sixth high potential terminal 12F is electrically connected to the second outer end 28 of the third transformer 21C (high potential coil 23) and the second outer end 28 of the fourth transformer 21D (high potential coil 23).

[0070] 5 to 7, the semiconductor device 5 includes a first low potential wiring 31, a second low potential wiring 32, a first high potential wiring 33, and a second high potential wiring 34, each formed in an insulating layer 51. In this embodiment, a plurality of first low potential wirings 31, a plurality of second low potential wirings 32, a plurality of first high potential wirings 33, and a plurality of second high potential wirings 34 are formed.

[0071] The first low-potential wiring 31 and the second low-potential wiring 32 fix the low-potential coil 22 of the first transformer 21A and the low-potential coil 22 of the second transformer 21B to the same potential. The first low-potential wiring 31 and the second low-potential wiring 32 also fix the low-potential coil 22 of the third transformer 21C and the low-potential coil 22 of the fourth transformer 21D to the same potential. In this embodiment, the first low-potential wiring 31 and the second low-potential wiring 32 fix all of the low-potential coils 22 of the transformers 21A to 21D to the same potential.

[0072] The first high-potential wiring 33 and the second high-potential wiring 34 fix the high-potential coil 23 of the first transformer 21A and the high-potential coil 23 of the second transformer 21B to the same potential. The first high-potential wiring 33 and the second high-potential wiring 34 also fix the high-potential coil 23 of the third transformer 21C and the high-potential coil 23 of the fourth transformer 21D to the same potential. In this embodiment, the first high-potential wiring 33 and the second high-potential wiring 34 fix all the high-potential coils 23 of the transformers 21A to 21D to the same potential.

[0073] The plurality of first low potential wirings 31 are electrically connected to the corresponding low potential terminals 11A-11D and the first inner ends 24 of the corresponding transformers 21A-21D (low potential coils 22), respectively. The plurality of first low potential wirings 31 have the same structure. In the following, the structure of the first low potential wiring 31 connected to the first low potential terminal 11A and the first transformer 21A will be described as an example. The description of the structure of the first low potential wiring 31 connected to the first transformer 21A applies mutatis mutandis to the structure of the other first low potential wirings 31, and will not be repeated here.

[0074] The first low-potential wiring 31 includes a through wiring 71, a low-potential connection wiring 72, a lead-out wiring 73, a first connection plug electrode 74, a second connection plug electrode 75, one or more (multiple in this embodiment) pad plug electrodes 76, and one or more (multiple in this embodiment) substrate plug electrodes 77.

[0075] The through wiring 71, the low-potential connecting wiring 72, the drawing wiring 73, the first connecting plug electrode 74, the second connecting plug electrode 75, the pad plug electrode 76, and the substrate plug electrode 77 are preferably formed from the same conductive material as the low-potential coil 22, etc. In other words, the through wiring 71, the low-potential connecting wiring 72, the drawing wiring 73, the first connecting plug electrode 74, the second connecting plug electrode 75, the pad plug electrode 76, and the substrate plug electrode 77 preferably include a barrier layer and a main body layer, similar to the low-potential coil 22, etc.

[0076] The through wiring 71 penetrates the multiple interlayer insulating layers 57 in the insulating layer 51 and extends in a columnar shape along the normal direction Z. In this embodiment, the through wiring 71 is formed in the region of the insulating layer 51 between the lowermost insulating layer 55 and the uppermost insulating layer 56. The through wiring 71 has an upper end on the uppermost insulating layer 56 side and a lower end on the lowermost insulating layer 55 side. The upper end of the through wiring 71 is formed in the same interlayer insulating layer 57 as the high-potential coil 23 and is covered by the uppermost insulating layer 56. The lower end of the through wiring 71 is formed in the same interlayer insulating layer 57 as the low-potential coil 22.

[0077] In this embodiment, the through wiring 71 includes a first electrode layer 78, a second electrode layer 79, and a plurality of wiring plug electrodes 80. In the through wiring 71, the first electrode layer 78, the second electrode layer 79, and the wiring plug electrodes 80 are each formed from the same conductive material as the low-potential coil 22, etc. In other words, the first electrode layer 78, the second electrode layer 79, and the wiring plug electrodes 80 each include a barrier layer and a main body layer, similar to the low-potential coil 22, etc.

[0078] The first electrode layer 78 forms the upper end of the through wiring 71. The second electrode layer 79 forms the lower end of the through wiring 71. The first electrode layer 78 is formed in an island shape and faces the low potential terminal 11 (first low potential terminal 11A) in the normal direction Z. The second electrode layer 79 is formed in an island shape and faces the first electrode layer 78 in the normal direction Z.

[0079] The plurality of wiring plug electrodes 80 are embedded in the plurality of interlayer insulating layers 57 located in the region between the first electrode layer 78 and the second electrode layer 79. The plurality of wiring plug electrodes 80 are stacked from the lowermost insulating layer 55 to the uppermost insulating layer 56 so as to be electrically connected to one another, and electrically connect the first electrode layer 78 and the second electrode layer 79. The plurality of wiring plug electrodes 80 each have a planar area that is less than the planar area of ​​the first electrode layer 78 and the planar area of ​​the second electrode layer 79.

[0080] The number of stacked wiring plug electrodes 80 corresponds to the number of stacked interlayer insulating layers 57. In this embodiment, six wiring plug electrodes 80 are embedded in each interlayer insulating layer 57, but the number of wiring plug electrodes 80 embedded in each interlayer insulating layer 57 is arbitrary. Of course, one or more wiring plug electrodes 80 may be formed penetrating the interlayer insulating layers 57.

[0081] The low-potential connecting wiring 72 is formed in the first inner region 66 of the first transformer 21A (low-potential coil 22) in the same interlayer insulating layer 57 as the low-potential coil 22. The low-potential connecting wiring 72 is formed in an island shape and faces the high-potential terminal 12 (first high-potential terminal 12A) in the normal direction Z. The low-potential connecting wiring 72 preferably has a planar area that exceeds the planar area of ​​the wiring plug electrode 80. The low-potential connecting wiring 72 is electrically connected to the first inner end 24 of the low-potential coil 22.

[0082] The lead-out wiring 73 is formed in the interlayer insulating layer 57 in a region between the semiconductor chip 41 and the through wiring 71. In this embodiment, the lead-out wiring 73 is formed in the first interlayer insulating layer 57 counting from the bottom insulating layer 55. The lead-out wiring 73 includes a first end on one side, a second end on the other side, and a wiring portion connecting the first end and the second end. The first end of the lead-out wiring 73 is located in the region between the semiconductor chip 41 and the lower end of the through wiring 71. The second end of the lead-out wiring 73 is located in the region between the semiconductor chip 41 and the low-potential connecting wiring 72. The wiring portion extends along the first main surface 42 of the semiconductor chip 41 and extends in a strip shape in the region between the first end and the second end.

[0083] The first connection plug electrode 74 is formed in the interlayer insulating layer 57 in a region between the through wiring 71 and the lead-out wiring 73, and is electrically connected to first ends of the through wiring 71 and the lead-out wiring 73. The second connection plug electrode 75 is formed in the interlayer insulating layer 57 in a region between the low potential connection wiring 72 and the lead-out wiring 73, and is electrically connected to second ends of the low potential connection wiring 72 and the lead-out wiring 73.

[0084] The plurality of pad plug electrodes 76 are formed in the uppermost insulating layer 56 in a region between the low potential terminal 11 (first low potential terminal 11A) and the through wiring 71, and are electrically connected to the upper ends of the low potential terminal 11 and the through wiring 71, respectively. The plurality of substrate plug electrodes 77 are formed in the lowermost insulating layer 55 in a region between the semiconductor chip 41 and the drawing wiring 73. In this embodiment, the substrate plug electrodes 77 are formed in a region between the semiconductor chip 41 and the first ends of the drawing wiring 73, and are electrically connected to the semiconductor chip 41 and the first ends of the drawing wiring 73, respectively.

[0085] 6 and 7, the plurality of first high-potential wirings 33 are electrically connected to the corresponding high-potential terminals 12A-12D and the second inner ends 27 of the corresponding transformers 21A-21D (high-potential coils 23), respectively. The plurality of first high-potential wirings 33 each have a similar structure. In the following, the structure of the first high-potential wiring 33 connected to the first high-potential terminal 12A and the first transformer 21A will be described as an example. The description of the structure of the first high-potential wiring 33 connected to the first transformer 21A applies mutatis mutandis to the structure of the other first high-potential wirings 33, and will not be repeated here.

[0086] The first high-potential wiring 33 includes a high-potential connection wiring 81 and one or more (multiple in this embodiment) pad plug electrodes 82. The high-potential connection wiring 81 and the pad plug electrode 82 are preferably formed from the same conductive material as the low-potential coil 22, etc. In other words, the high-potential connection wiring 81 and the pad plug electrode 82 preferably include a barrier layer and a main body layer, similar to the low-potential coil 22, etc.

[0087] The high-potential connection wiring 81 is formed in the second inner region 67 of the high-potential coil 23 within the same interlayer insulation layer 57 as the high-potential coil 23. The high-potential connection wiring 81 is formed in an island shape and faces the high-potential terminal 12 (first high-potential terminal 12A) in the normal direction Z. The high-potential connection wiring 81 is electrically connected to the second inner end 27 of the high-potential coil 23. The high-potential connection wiring 81 is formed at an interval from the low-potential connection wiring 72 in a plan view and does not face the low-potential connection wiring 72 in the normal direction Z. Thereby, the insulation distance between the low-potential connection wiring 72 and the high-potential connection wiring 81 is increased, and the breakdown voltage of the insulation layer 51 is enhanced.

[0088] The plurality of pad plug electrodes 82 are formed in the region between the high-potential terminal 12 (first high-potential terminal 12A) and the high-potential connection wiring 81 within the uppermost insulation layer 56 and are electrically connected to the high-potential terminal 12 and the high-potential connection wiring 81, respectively. The plurality of pad plug electrodes 82 each have a planar area less than the planar area of the high-potential connection wiring 81 in a plan view.

[0089] Referring to FIG. 7, it is preferable that the distance D1 between the low-potential terminal 11 and the high-potential terminal 12 exceeds the distance D2 between the low-potential coil 22 and the high-potential coil 23 (D2 < D1). It is preferable that the distance D1 exceeds the total thickness DT of the plurality of interlayer insulation layers 57 (DT < D1). The ratio D2 / D1 of the distance D2 to the distance D1 may be 0.01 or more and 0.1 or less. It is preferable that the distance D1 is 100 μm or more and 500 μm or less. The distance D2 may be 1 μm or more and 50 μm or less. It is preferable that the distance D2 is 5 μm or more and 25 μm or less. The values of the distance D1 and the distance D2 are arbitrary and are appropriately adjusted according to the breakdown voltage to be achieved.

[0090] Referring to FIGS. 6 and 7, the semiconductor device 5 includes dummy patterns 85 embedded in the insulation layer 51 so as to be located around the transformers 21A to 21D in a plan view.

[0091] The dummy pattern 85 is formed in a pattern (discontinuous pattern) different from the high-potential coil 23 and the low-potential coil 22, and is independent of the transformers 21A to 21D. In other words, the dummy pattern 85 does not function as a part of the transformers 21A to 21D. The dummy pattern 85 is formed as a shielding conductor layer that shields the electric field between the low-potential coil 22 and the high-potential coil 23 in the transformers 21A to 21D and suppresses electric field concentration on the high-potential coil 23. In this embodiment, the dummy pattern 85 is routed at a line density per unit area equal to that of the high-potential coil 23. The line density of the dummy pattern 85 being equal to that of the high-potential coil 23 means that the line density of the dummy pattern 85 falls within a range of ±20% of the line density of the high-potential coil 23.

[0092] The depth position of the dummy pattern 85 within the insulating layer 51 is arbitrary and is adjusted according to the electric field intensity to be relaxed. The dummy pattern 85 is preferably formed in a region closer to the high-potential coil 23 than to the low-potential coil 22 in the normal direction Z. Note that the dummy pattern 85 being closer to the high-potential coil 23 in the normal direction Z means that the distance between the dummy pattern 85 and the high-potential coil 23 in the normal direction Z is less than the distance between the dummy pattern 85 and the low-potential coil 22.

[0093] In this case, electric field concentration on the high-potential coil 23 can be appropriately suppressed. The shorter the distance between the dummy pattern 85 and the high-potential coil 23 in the normal direction Z, the more electric field concentration on the high-potential coil 23 can be suppressed. The dummy pattern 85 is preferably formed in the same interlayer insulating layer 57 as the high-potential coil 23. In this case, electric field concentration on the high-potential coil 23 can be further appropriately suppressed. The dummy pattern 85 includes multiple dummy patterns with different electrical states. The dummy pattern 85 may include a high-potential dummy pattern.

[0094] The depth position of the high-potential dummy pattern 86 within the insulating layer 51 is arbitrary and is adjusted according to the electric field intensity to be relaxed. The high-potential dummy pattern 86 is preferably formed in a region closer to the high-potential coil 23 than the low-potential coil 22 in the normal direction Z. The high-potential dummy pattern 86 being closer to the high-potential coil 23 in the normal direction Z means that the distance between the high-potential dummy pattern 86 and the high-potential coil 23 in the normal direction Z is less than the distance between the high-potential dummy pattern 86 and the low-potential coil 22.

[0095] Dummy patterns 85 include floating dummy patterns formed in an electrically floating state within insulating layer 51 so as to be positioned around transformers 21A to 21D.

[0096] In this embodiment, the floating dummy pattern is routed in a dense line shape so as to partially cover and partially expose the area around the high-potential coil 23 in a plan view. The floating dummy pattern may be formed to have ends or to have no ends.

[0097] The depth position of the floating dummy pattern inside the insulating layer 51 is arbitrary and is adjusted according to the electric field intensity to be relaxed.

[0098] The number of floating lines is arbitrary and can be adjusted depending on the electric field to be relaxed. The floating dummy pattern may be made up of a plurality of floating lines.

[0099] 7, the semiconductor device 5 includes a second functional device 60 formed on the first main surface 42 of the semiconductor chip 41 in a device region 62. The second functional device 60 is formed using a surface layer portion of the first main surface 42 of the semiconductor chip 41 and / or a region above the first main surface 42 of the semiconductor chip 41, and is covered with an insulating layer 51 (lowermost insulating layer 55). In FIG. 7, the second functional device 60 is simply shown by a dashed line drawn on the surface layer portion of the first main surface 42.

[0100] The second functional device 60 is electrically connected to the low-potential terminal 11 via a low-potential wiring, and is electrically connected to the high-potential terminal 12 via a high-potential wiring. The low-potential wiring has a structure similar to that of the first low-potential wiring 31 (second low-potential wiring 32), except that it is routed within the insulating layer 51 so as to be connected to the second functional device 60. The high-potential wiring has a structure similar to that of the first high-potential wiring 33 (second high-potential wiring 34), except that it is routed within the insulating layer 51 so as to be connected to the second functional device 60. A detailed description of the low-potential wiring and high-potential wiring related to the second functional device 60 will be omitted.

[0101] The second functional device 60 may include at least one of a passive device, a semiconductor rectifying device, and a semiconductor switching device. The second functional device 60 may include circuitry in which any two or more of the passive devices, the semiconductor rectifying device, and the semiconductor switching device are selectively combined. The circuitry may form part or all of an integrated circuit.

[0102] The passive device may include a semiconductor passive device. The passive device may include either or both of a resistor and a capacitor. The semiconductor rectifying device may include at least one of a pn junction diode, a PIN diode, a Zener diode, a Schottky barrier diode, and a fast recovery diode. The semiconductor switching device may include at least one of a BJT (Bipolar Junction Transistor), a MISFET (Metal Insulator Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Junction Transistor), and a JFET (Junction Field Effect Transistor).

[0103] 5 to 7, the semiconductor device 5 further includes a seal conductor 61 embedded in the insulating layer 51. The seal conductor 61 is embedded in the insulating layer 51 in a wall shape at a distance from the insulating side walls 53A to 53D in a plan view, and divides the insulating layer 51 into a device region 62 and an outer region 63. The seal conductor 61 prevents moisture and cracks from entering the device region 62 from the outer region 63.

[0104] The device region 62 is a region including the first functional device 45 (plurality of transformers 21), the second functional device 60, plural low potential terminals 11, plural high potential terminals 12, first low potential wiring 31, second low potential wiring 32, first high potential wiring 33, second high potential wiring 34, and dummy patterns 85. The outer region 63 is a region outside the device region 62.

[0105] The seal conductor 61 is electrically isolated from the device region 62. Specifically, the seal conductor 61 is electrically isolated from the first functional device 45 (plurality of transformers 21), the second functional device 60, the plurality of low potential terminals 11, the plurality of high potential terminals 12, the first low potential wiring 31, the second low potential wiring 32, the first high potential wiring 33, the second high potential wiring 34, and the dummy pattern 85. More specifically, the seal conductor 61 is fixed in an electrically floating state. The seal conductor 61 does not form a current path leading to the device region 62.

[0106] The seal conductor 61 is formed in a strip shape along the insulating side walls 53 to 53D in plan view. In this embodiment, the seal conductor 61 is formed in a quadrangular ring shape (specifically, a rectangular ring shape) in plan view. As a result, the seal conductor 61 defines a quadrangular (specifically, rectangular) device region 62 in plan view. The seal conductor 61 also defines a quadrangular (specifically, rectangular) outer region 63 surrounding the device region 62 in plan view.

[0107] Specifically, the seal conductor 61 has an upper end on the insulating principal surface 52 side, a lower end on the semiconductor chip 41 side, and a wall extending in a wall shape between the upper and lower ends. In this embodiment, the upper end of the seal conductor 61 is formed at a distance from the insulating principal surface 52 toward the semiconductor chip 41 and is located within the insulating layer 51. In this embodiment, the upper end of the seal conductor 61 is covered by the uppermost insulating layer 56. The upper end of the seal conductor 61 may be covered by one or more interlayer insulating layers 57. The upper end of the seal conductor 61 may be exposed from the uppermost insulating layer 56. The lower end of the seal conductor 61 is formed at a distance from the semiconductor chip 41 toward the upper end.

[0108] Thus, in this embodiment, the seal conductor 61 is embedded in the insulating layer 51 so as to be located on the semiconductor chip 41 side with respect to the plurality of low potential terminals 11 and the plurality of high potential terminals 12. Furthermore, the seal conductor 61 faces the first functional device 45 (plurality of transformers 21), the first low potential wiring 31, the second low potential wiring 32, the first high potential wiring 33, the second high potential wiring 34, and the dummy pattern 85 in the insulating layer 51 in a direction parallel to the insulating principal surface 52. The seal conductor 61 may face a part of the second functional device 60 in the insulating layer 51 in a direction parallel to the insulating principal surface 52.

[0109] The seal conductor 61 includes a plurality of seal plug conductors 64 and one or more (in this embodiment, a plurality) seal via conductors 65. The number of seal via conductors 65 is arbitrary. The uppermost seal plug conductor 64 among the plurality of seal plug conductors 64 forms the upper end portion of the seal conductor 61. The plurality of seal via conductors 65 each form the lower end portion of the seal conductor 61. The seal plug conductor 64 and the seal via conductor 65 are preferably formed from the same conductive material as the low-potential coil 22. In other words, the seal plug conductor 64 and the seal via conductor 65 preferably include a barrier layer and a main body layer, similar to the low-potential coil 22, etc.

[0110] The multiple seal plug conductors 64 are embedded in the multiple interlayer insulating layers 57, respectively, and are each formed in a quadrangular ring shape (specifically, a rectangular ring shape) surrounding the device region 62 in plan view. The multiple seal plug conductors 64 are stacked from the lowermost insulating layer 55 to the uppermost insulating layer 56 so as to be connected to each other. The number of stacked multiple seal plug conductors 64 matches the number of stacked multiple interlayer insulating layers 57. Of course, one or more seal plug conductors 64 may be formed penetrating the multiple interlayer insulating layers 57.

[0111] As long as a single annular seal conductor 61 is formed by an assembly of a plurality of seal plug conductors 64, it is not necessary for all of the plurality of seal plug conductors 64 to be formed in an annular shape. For example, at least one of the plurality of seal plug conductors 64 may be formed in an end shape. Also, at least one of the plurality of seal plug conductors 64 may be divided into a plurality of strip-shaped portions with ends. However, in consideration of the risk of moisture and cracks penetrating into the device region 62, it is preferable that the plurality of seal plug conductors 64 be formed in an endless (annular) shape.

[0112] The plurality of seal via conductors 65 are respectively formed in the region between the semiconductor chip 41 and the seal plug conductor 64 in the lowermost insulating layer 55. The plurality of seal via conductors 65 are formed spaced apart from the semiconductor chip 41 and connected to the seal plug conductor 64. The plurality of seal via conductors 65 have a planar area smaller than the planar area of ​​the seal plug conductor 64. When a single seal via conductor 65 is formed, the single seal via conductor 65 may have a planar area equal to or larger than the planar area of ​​the seal plug conductor 64.

[0113] The width of the shield conductor 61 may be 0.1 μm or more and 10 μm or less. The width of the shield conductor 61 is preferably 1 μm or more and 5 μm or less. The width of the shield conductor 61 is defined as the width in a direction perpendicular to the direction in which the shield conductor 61 extends.

[0114] 7 and 8, the semiconductor device 5 further includes an isolation structure 130 that is interposed between the semiconductor chip 41 and the seal conductor 61 and electrically isolates the seal conductor 61 from the semiconductor chip 41. The isolation structure 130 preferably includes an insulator. In this embodiment, the isolation structure 130 is made of a field insulating film 131 formed on the first main surface 42 of the semiconductor chip 41.

[0115] The field insulating film 131 includes at least one of an oxide film (silicon oxide film) and a nitride film (silicon nitride film). The field insulating film 131 is preferably made of a LOCOS (local oxidation of silicon) film, which is an example of an oxide film formed by oxidizing the first main surface 42 of the semiconductor chip 41. The thickness of the field insulating film 131 is arbitrary as long as it can insulate the semiconductor chip 41 and the seal conductor 61. The thickness of the field insulating film 131 may be 0.1 μm or more and 5 μm or less.

[0116] The isolation structure 130 is formed on the first main surface 42 of the semiconductor chip 41, and extends in a strip shape along the seal conductor 61 in plan view. In this embodiment, the isolation structure 130 is formed in a quadrangular ring shape (specifically, a rectangular ring shape) in plan view. The isolation structure 130 has a connection portion 132 to which the lower end portion (seal via conductor 65) of the seal conductor 61 is connected. The connection portion 132 may form an anchor portion where the lower end portion (seal via conductor 65) of the seal conductor 61 bites in toward the semiconductor chip 41. Of course, the connection portion 132 may be formed flush with the main surface of the isolation structure 130.

[0117] The isolation structure 130 includes an inner end 130A on the device region 62 side, an outer end 130B on the outer region 63 side, and a main body 130C between the inner end 130A and the outer end 130B. The inner end 130A defines the region in which the second functional device 60 is formed (i.e., the device region 62) in plan view. The inner end 130A may be formed integrally with an insulating film (not shown) formed on the first main surface 42 of the semiconductor chip 41.

[0118] The outer end 130B is exposed from the chip sidewalls 44A to 44D of the semiconductor chip 41 and is continuous with the chip sidewalls 44A to 44D of the semiconductor chip 41. More specifically, the outer end 130B is formed flush with the chip sidewalls 44A to 44D of the semiconductor chip 41. The outer end 130B forms a flush ground surface between the chip sidewalls 44A to 44D of the semiconductor chip 41 and the insulating sidewalls 53A to 53D of the insulating layer 51. Of course, in other embodiments, the outer end 130B may be formed in the first main surface 42 at a distance from the chip sidewalls 44A to 44D.

[0119] The main body 130C has a flat surface extending substantially parallel to the first main surface 42 of the semiconductor chip 41. The main body 130C has a connection portion 132 to which the lower end portion (seal via conductor 65) of the seal conductor 61 is connected. The connection portion 132 is formed in a portion of the main body 130C spaced apart from the inner end portion 130A and the outer end portion 130B. The isolation structure 130 can take various forms in addition to the field insulating film 131.

[0120] 7, the semiconductor device 5 further includes an inorganic insulating layer 140 formed on the insulating principal surface 52 of the insulating layer 51 so as to cover the seal conductor 61. The inorganic insulating layer 140 may also be referred to as a passivation layer. The inorganic insulating layer 140 protects the insulating layer 51 and the semiconductor chip 41 from above the insulating principal surface 52.

[0121] In this embodiment, the inorganic insulating layer 140 has a laminated structure including a first inorganic insulating layer 141 and a second inorganic insulating layer 142. The first inorganic insulating layer 141 may contain silicon oxide. The first inorganic insulating layer 141 preferably contains USG (undoped silicate glass), which is silicon oxide without added impurities. The thickness of the first inorganic insulating layer 141 may be 50 nm or more and 5000 nm or less. The second inorganic insulating layer 142 may contain silicon nitride. The thickness of the second inorganic insulating layer 142 may be 500 nm or more and 5000 nm or less. By increasing the total thickness of the inorganic insulating layer 140, the dielectric strength voltage on the high-potential coil 23 can be increased.

[0122] When the first inorganic insulating layer 141 is made of USG and the second inorganic insulating layer 142 is made of silicon nitride, the breakdown voltage (V / cm) of USG exceeds the breakdown voltage (V / cm) of silicon nitride. Therefore, when the inorganic insulating layer 140 is thickened, it is preferable to form the first inorganic insulating layer 141 thicker than the second inorganic insulating layer 142.

[0123] The first inorganic insulating layer 141 may contain at least one of BPSG (boron-doped phosphor silicate glass) and PSG (phosphorus silicate glass), which are examples of silicon oxide. In this case, however, since impurities (boron or phosphorus) are contained in the silicon oxide, it is particularly preferable to form the first inorganic insulating layer 141 made of USG in order to increase the dielectric strength voltage on the high-potential coil 23. Of course, the inorganic insulating layer 140 may have a single-layer structure made of either the first inorganic insulating layer 141 or the second inorganic insulating layer 142.

[0124] The inorganic insulating layer 140 covers the entire area of ​​the seal conductor 61, and has a plurality of low potential pad openings 143 and a plurality of high potential pad openings 144 formed in an area outside the seal conductor 61. The plurality of low potential pad openings 143 expose the plurality of low potential terminals 11, respectively. The plurality of high potential pad openings 144 expose the plurality of high potential terminals 12, respectively. The inorganic insulating layer 140 may have overlapping portions that rise up onto the peripheral edges of the low potential terminals 11. The inorganic insulating layer 140 may have overlapping portions that rise up onto the peripheral edges of the high potential terminals 12.

[0125] The semiconductor device 5 further includes an organic insulating layer 145 formed on the inorganic insulating layer 140. The organic insulating layer 145 may include a photosensitive resin. The organic insulating layer 145 may include at least one of polyimide, polyamide, and polybenzoxazole. In this embodiment, the organic insulating layer 145 includes polyimide. The thickness of the organic insulating layer 145 may be 1 μm or more and 50 μm or less.

[0126] The thickness of the organic insulating layer 145 preferably exceeds the total thickness of the inorganic insulating layer 140. Furthermore, the total thickness of the inorganic insulating layer 140 and the organic insulating layer 145 is preferably equal to or greater than the distance D2 between the low-potential coil 22 and the high-potential coil 23. In this case, the total thickness of the inorganic insulating layer 140 is preferably equal to or greater than 2 μm and equal to or less than 10 μm. Furthermore, the thickness of the organic insulating layer 145 is preferably equal to or greater than 5 μm and equal to or less than 50 μm. These structures can prevent the inorganic insulating layer 140 and the organic insulating layer 145 from becoming thicker, and at the same time, the laminated film of the inorganic insulating layer 140 and the organic insulating layer 145 can appropriately increase the dielectric strength voltage on the high-potential coil 23.

[0127] The organic insulating layer 145 includes a first portion 146 covering the region on the low potential side and a second portion 147 covering the region on the high potential side. The first portion 146 covers the seal conductor 61 with the inorganic insulating layer 140 sandwiched therebetween. The first portion 146 has a plurality of low potential terminal openings 148 that expose a plurality of low potential terminals 11 (low potential pad openings 143) in the region outside the seal conductor 61. The first portion 146 may have an overlap portion that rises onto the periphery (overlap portion) of the low potential pad opening 143.

[0128] The second portion 147 is formed at a distance from the first portion 146, and exposes the inorganic insulating layer 140 between the second portion 147 and the first portion 146. The second portion 147 has a plurality of high-potential terminal openings 149 that expose the plurality of high-potential terminals 12 (high-potential pad openings 144), respectively. The second portion 147 may have an overlapping portion that rises onto the periphery (overlapping portion) of the high-potential pad opening 144.

[0129] The second portion 147 collectively covers the transformers 21A to 21D and the dummy pattern 85. Specifically, the second portion 147 collectively covers the plurality of high-potential coils 23, the plurality of high-potential terminals 12, the first high-potential dummy pattern 87, the second high-potential dummy pattern 88, and the floating dummy pattern 121.

[0130] The embodiments of the present disclosure can be implemented in other forms. In the above-described embodiment, an example in which the first functional device 45 and the second functional device 60 are formed has been described. However, a form in which only the second functional device 60 is provided without the first functional device 45 may be adopted. In this case, the dummy pattern 85 may be removed. According to this structure, the second functional device 60 can achieve the same effects as those described in the first embodiment (excluding the effects related to the dummy pattern 85).

[0131] That is, when a voltage is applied to the second functional device 60 via the low potential terminal 11 and the high potential terminal 12, it is possible to suppress undesired conduction between the high potential terminal 12 and the seal conductor 61. Furthermore, when a voltage is applied to the second functional device 60 via the low potential terminal 11 and the high potential terminal 12, it is possible to suppress undesired conduction between the low potential terminal 11 and the seal conductor 61.

[0132] In the above embodiment, an example was described in which the second functional device 60 was formed. However, the second functional device 60 is not necessarily required, and may be removed.

[0133] In the above embodiment, an example was described in which the dummy pattern 85 was formed. However, the dummy pattern 85 is not necessarily required and may be removed.

[0134] In the above embodiment, an example has been described in which the first functional device 45 is a multi-channel type that includes multiple transformers 21. However, a first functional device 45 that is a single-channel type that includes a single transformer 21 may also be employed.

[0135] <Transformer arrangement> 9 is a plan view (top view) schematically showing an example of a transformer arrangement in a two-channel transformer chip 300 (corresponding to the aforementioned semiconductor device 5). The transformer chip 300 in this figure has a first transformer 301, a second transformer 302, a third transformer 303, a fourth transformer 304, a first guard ring 305, a second guard ring 306, pads a1 to a8, pads b1 to b8, pads c1 to c4, and pads d1 to d4.

[0136] In the transformer chip 300, pads a1 and b1 are connected to one end of a secondary coil L1s that forms a first transformer 301, and pads c1 and d1 are connected to the other end of the secondary coil L1s. Pads a2 and b2 are connected to one end of a secondary coil L2s that forms a second transformer 302, and pads c1 and d1 are connected to the other end of the secondary coil L2s.

[0137] Furthermore, pads a3 and b3 are connected to one end of a secondary coil L3s that forms the third transformer 303, and pads c2 and d2 are connected to the other end of the secondary coil L3s. Pads a4 and b4 are connected to one end of a secondary coil L4s that forms the fourth transformer 304, and pads c2 and d2 are connected to the other end of the secondary coil L4s.

[0138] Note that the primary coils forming the first transformer 301, the primary coils forming the second transformer 302, the primary coils forming the third transformer 303, and the primary coils forming the fourth transformer 304 are not shown in this figure. However, the primary coils basically have the same configuration as the secondary coils L1s to L4s, and are arranged directly below the secondary coils L1s to L4s, respectively, so as to face the secondary coils L1s to L4s.

[0139] That is, pads a5 and b5 are connected to one end of the primary coil forming first transformer 301, and pads c3 and d3 are connected to the other end of the primary coil. Also, pads a6 and b6 are connected to one end of the primary coil forming second transformer 302, and pads c3 and d3 are connected to the other end of the primary coil.

[0140] Pads a7 and b7 are connected to one end of the primary coil forming third transformer 303, and pads c4 and d4 are connected to the other end of the primary coil. Pads a8 and b8 are connected to one end of the primary coil forming fourth transformer 304, and pads c4 and d4 are connected to the other end of the primary coil.

[0141] However, the pads a5 to a8, pads b5 to b8, pads c3 and c4, and pads d3 and d4 are led out from the inside of the transformer chip 300 to the surface through vias (not shown).

[0142] Of the multiple pads, pads a1 to a8 correspond to first current supply pads, pads b1 to b8 correspond to first voltage measurement pads, pads c1 to c4 correspond to second current supply pads, and pads d1 to d4 correspond to second voltage measurement pads.

[0143] Therefore, with the transformer chip 300 of this configuration example, the series resistance component of each coil can be accurately measured during the defective product inspection. Therefore, it is possible to not only reject defective products in which a break occurs in each coil, but also to appropriately reject defective products in which an abnormal resistance value occurs in each coil (for example, a short circuit between coils), thereby making it possible to prevent defective products from being released onto the market.

[0144] For the transformer chip 300 that has passed the above-mentioned defective product inspection, the above-mentioned plurality of pads may be used as a means for connecting the primary chip and the secondary chip (for example, the above-mentioned controller chip 210 and driver chip 220).

[0145] Specifically, pads a1 and b1, pads a2 and b2, pads a3 and b3, and pads a4 and b4 may be connected to the signal input or output terminals of the secondary chip, respectively, and pads c1 and d1, and pads c2 and d2 may be connected to the common voltage application terminal (GND2) of the secondary chip, respectively.

[0146] On the other hand, pads a5 and b5, pads a6 and b6, pads a7 and b7, and pads a8 and b8 may be connected to the signal input or output terminals of the primary chip, respectively, and pads c3 and d3, and pads c4 and d4 may be connected to the common voltage application terminal (GND1) of the primary chip, respectively.

[0147] Here, the first transformer 301 to the fourth transformer 304 are arranged in a manner that couples them in the respective signal transmission directions, as shown in Fig. 9. Referring to this figure, for example, the first transformer 301 and the second transformer 302 that transmit signals from the primary-side chip to the secondary-side chip are connected as a first pair by a first guard ring 305. Also, for example, the third transformer 303 and the fourth transformer 304 that transmit signals from the secondary-side chip to the primary-side chip are connected as a second pair by a second guard ring 306.

[0148] The reason for such coupling is to ensure a withstand voltage between the primary coil and the secondary coil when the primary coil and the secondary coil that respectively form the first transformer 301 to the fourth transformer 304 are stacked in the vertical direction of the substrate of the transformer chip 300. However, the first guard ring 305 and the second guard ring 306 are not necessarily essential components.

[0149] The first guard ring 305 and the second guard ring 306 may be connected to a low impedance wiring such as a ground terminal via pads e1 and e2, respectively.

[0150] In the transformer chip 300, pads c1 and d1 are shared between the secondary coil L1s and the secondary coil L2s. Pads c2 and d2 are shared between the secondary coil L3s and the secondary coil L4s. Pads c3 and d3 are shared between the primary coil L1p and the primary coil L2p. Pads c4 and d4 are shared between the corresponding primary coils. This configuration reduces the number of pads, making it possible to miniaturize the transformer chip 300.

[0151] 9, the primary coil and secondary coil forming each of the first transformer 301 to the fourth transformer 304 are preferably wound in a rectangular shape (or a track shape with rounded corners) in a plan view of the transformer chip 300. This configuration increases the area where the primary coil and secondary coil overlap, thereby improving the transmission efficiency of the transformer.

[0152] Of course, the transformer arrangement in this figure is merely an example, and the number, shape, and arrangement of the coils, as well as the arrangement of the pads, are arbitrary. Furthermore, the chip structure and transformer arrangement described so far can be applied to all semiconductor devices in which coils are integrated on a semiconductor chip.

[0153] <Switching power supply (first embodiment)> 10 is a diagram showing a first embodiment of a switching power supply 400. The switching power supply 400 of this embodiment is an isolated DC / DC converter that generates an output voltage V2 of the secondary circuit system 200s from an input voltage V0 of the primary circuit system 200p while insulating the primary circuit system 200p from a secondary circuit system 200s.

[0154] The switching power supply 400 may be incorporated into the aforementioned signal transmission device 200 (see FIG. 1). That is, the signal transmission device 200 may include the switching power supply 400 in addition to a signal transmission circuit (such as the aforementioned pulse transmitting circuit 211, pulse receiving circuit 223, and transformers 231 and 232) that transmits signals between the primary circuit system 200p and the secondary circuit system 200s while insulating them from each other. The output voltage V2 may be understood as the aforementioned power supply voltage VCC2.

[0155] Referring to this figure, the switching power supply 400 includes a power supply control device 410, an output circuit 420, and a voltage feedback signal generating circuit 430.

[0156] The power supply control device 410 receives a voltage feedback signal FB and a current feedback signal CS and generates a gate signal G1 to control the primary current Ip flowing through the output circuit 420. The power supply control device 410 may operate by receiving a power supply voltage V1 that is independent of the input voltage V0. The power supply voltage V1 may be understood as the aforementioned power supply voltage VCC1.

[0157] The output circuit 420 is switched by the power supply control device 410 to generate an output voltage V2 from the input voltage V0. The output circuit 420 may be a flyback type including an output transistor M1, a transformer TR, a diode D1, a capacitor C1, a resistor R1, and a snubber circuit SNUB. The output transistor M1 may be, for example, an N-channel type. Some or all of the circuit elements forming the output circuit 420 may be discrete components external to the power supply control device 410.

[0158] The transformer TR includes a primary coil Lp (number of turns Np) and a secondary coil Ls (number of turns Ns) that are magnetically coupled to each other while electrically insulating the primary circuit system 200p from the secondary circuit system 200s. The primary coil Lp and the secondary coil Ls may each be wound around a core FC whose main component is ferrite or the like.

[0159] A first end (e.g., winding end) of the primary coil Lp is connected to a terminal to which the input voltage V0 is applied. A second end (e.g., winding start) of the primary coil Lp is connected to a drain of the output transistor M1. A gate of the output transistor M1 is connected to a terminal to which a gate signal G1 is applied. A source of the output transistor M1 and a first end of the resistor R1 are connected to a terminal to which a current feedback signal CS (=Ip×R1) is applied. A second end of the resistor R1 is connected to a terminal to which a ground voltage GND1 is applied.

[0160] The output transistor M1 connected in this manner functions as a switch element for turning on / off the primary current Ip in response to the gate signal G1. The output transistor M1 is in an on state when the gate signal G1 is at a high level. On the other hand, the output transistor M1 is in an off state when the gate signal G1 is at a low level.

[0161] A first end (e.g., a winding start end) of the secondary coil Ls and an anode of the diode D1 are connected to an application end of the secondary voltage Vs. A cathode of the diode D1 and a first end of the capacitor C1 are connected to an application end of the output voltage V2. A second end (e.g., a winding end) of the secondary coil Ls and a second end of the capacitor C1 are both connected to an application end of the ground voltage GND2.

[0162] The snubber circuit SNUB is connected across the primary coil Lp and absorbs spike noise that occurs when the output transistor M1 is turned off, i.e., when the primary current Ip is cut off.

[0163] Next, a description will be given of the basic operation of the output circuit 420. The output circuit 420 drives a primary current Ip flowing through a primary coil Lp of the transformer TR, and generates an output voltage V2 from a secondary voltage Vs induced in a secondary coil Ls of the transformer TR.

[0164] For example, during the on period of the output transistor M1, a primary current Ip flows from the application terminal of the input voltage V0 via the primary coil Lp and the output transistor M1. Therefore, electrical energy is stored in the primary coil Lp. After that, when the output transistor M1 is turned off, a secondary voltage Vs is induced in the secondary coil Ls, which is magnetically coupled to the primary coil Lp. The secondary voltage Vs is rectified and smoothed via the diode D1 and the capacitor C1. Through this rectification and smoothing operation, an output voltage V2 is generated from the secondary voltage Vs. Thereafter, the output transistor M1 is turned on and off, repeating the same switching operation as described above.

[0165] The primary inductance Lp and secondary inductance Ls of the transformer TR can be arbitrarily adjusted so as to obtain a desired output voltage V2 in consideration of the input voltage V0 and the load.

[0166] The voltage feedback signal generating circuit 430 generates a voltage feedback signal FB according to the output voltage V2. For example, the voltage feedback signal generating circuit 430 may include an isolation circuit ISO that receives the output voltage V2 and outputs the voltage feedback signal FB while insulating the primary circuit system 200p from the secondary circuit system 200s.

[0167] The voltage feedback signal FB may be a pulse signal having a duty (= the ratio of the on-period to the pulse period) according to the output voltage V2. For example, the duty of the voltage feedback signal FB may decrease as the output voltage V2 increases and increase as the output voltage V2 decreases. Note that when the output voltage V2 matches the target value, the duty of the voltage feedback signal FB may be 50%. Also, when the output voltage V2 is 0V, the duty of the voltage feedback signal FB may be 0%.

[0168] In this way, in the switching power supply 400 of this embodiment, feedback control of the output voltage V2 is performed by a so-called direct feedback method.

[0169] <Switching power supply (second embodiment)> 11 is a diagram showing a second embodiment of a switching power supply 400. The switching power supply 400 of this embodiment is based on the first embodiment (FIG. 10) described above, and the internal configuration of a power supply control device 410 is specified.

[0170] Referring to this figure, the power supply control device 410 includes a power supply control circuit 411 , an overcurrent protection circuit 412 , and a soft start circuit 413 .

[0171] The power supply control circuit 411 receives the voltage feedback signal FB and controls the gate signal G1 so that the output voltage V2 coincides with the target value. Also, the power supply control circuit 411 receives the overcurrent protection signal OCP and controls the gate signal G1 so that the primary current Ip is equal to or less than the overcurrent protection value Iocp.

[0172] The overcurrent protection circuit 412 compares a current feedback signal CS corresponding to the primary current Ip with an overcurrent limit value Vth to generate an overcurrent protection signal OCP. The overcurrent protection signal OCP goes high when the current feedback signal CS is higher than the overcurrent limit value Vth. On the other hand, the overcurrent protection signal OCP goes low when the current feedback signal CS is lower than the overcurrent limit value Vth.

[0173] For example, the power supply control circuit 411 may perform a hiccup-type overcurrent protection operation such that, when the overcurrent protection signal OCP rises to a high level (= the logical level when an overcurrent is detected), the output transistor M1 is forcibly turned off until the next on timing in the switching period Tsw of the output transistor M1.

[0174] The soft start circuit 413 has a so-called soft start function, which is a function of gradually raising the overcurrent limit value Vth from the initial value (0 V) to the set value VssH over a predetermined soft start period Tss after the power supply voltage V1 is applied to the power supply control device 410. This function will be described in detail below.

[0175] 12 is a diagram showing a successful example of soft start operation (V0→V1). From the top, the diagram shows the power supply voltage V1, the overcurrent limit value Vth, the input voltage V0, and the output voltage V2.

[0176] In this diagram, after input voltage V0 is applied to output circuit 420 at time t11, power supply voltage V1 is applied to power supply control device 410 at time t12. In this case, as shown from time t12 to t13, output voltage V2 gradually rises from 0 V to the target value over the soft-start period Tss as overcurrent limit value Vth is increased in stages. Note that overcurrent limit value Vth may be increased in stages (discretely) in synchronization with the internal clock as shown in this diagram. Alternatively, overcurrent limit value Vth may be increased continuously.

[0177] Furthermore, after the overcurrent limit value Vth reaches the set value VssH at time t13, the soft-start circuit 413 may raise the overcurrent limit value Vth from the set value VssH to the set value Vocp. The set value VssH may be understood as the overcurrent limit value at the completion of the soft-start operation. On the other hand, the set value Vocp may be understood as the overcurrent limit value in a steady state. Therefore, the set value Vocp may be appropriately set in consideration of the normal range of the primary current Ip that flows in the switching power supply 400 in a steady state.

[0178] In this way, if the power supply voltage V1 rises after the input voltage V0 rises, the soft start operation of the output voltage V2 can be achieved normally. However, the input voltage V0 and the power supply voltage V1 are applied independently and asynchronously. Therefore, the start-up sequence of the input voltage V0 and the power supply voltage V1 is not necessarily limited to the above.

[0179] 13 is a diagram showing an example of a soft-start failure (V1→V0). As with the above-mentioned FIG. 12, this diagram shows, from top to bottom, the power supply voltage V1, the overcurrent limit value Vth, the input voltage V0, and the output voltage V2.

[0180] In this diagram, after power supply voltage V1 is applied to power supply control device 410 at time t21, input voltage V0 is applied to output circuit 420 at time t23. In other words, the start-up order of input voltage V0 and power supply voltage V1 is reversed. In this case, as shown from time t21 to t22, while overcurrent limit value Vth is gradually increased over the soft-start period Tss, output voltage V2 does not rise at all.

[0181] Then, at time t23, when the input voltage V0 is applied and the output circuit 420 is ready to generate the output voltage V2, the overcurrent limit value Vth has already been raised to the set value VssH and even to the set value Vocp, which means that the soft start function described above does not work, and there is a risk that the output voltage V2 will exceed the target value and overshoot.

[0182] In view of the above considerations, a third embodiment will be proposed below that can appropriately achieve a soft start of the output voltage V2 without relying on the startup sequence of the input voltage V0 and the power supply voltage V1.

[0183] <Switching power supply (third embodiment)> 14 is a diagram showing a third embodiment of a switching power supply 400. The switching power supply 400 of this embodiment is based on the second embodiment (FIG. 11) described above, with a modification made to the power supply control device 410. Referring to this figure, the power supply control device 410 further includes a detection circuit 414 in addition to the components 411 to 413 described above.

[0184] The detection circuit 414 detects the voltage feedback signal FB and generates the detection signal Sx. For example, the detection signal Sx may be low when the voltage feedback signal FB is pulse-driven. On the other hand, the detection signal Sx may be high when the voltage feedback signal FB is not pulse-driven.

[0185] The voltage feedback signal generation circuit 430 may be, for example, a circuit that receives the output voltage V2 and pulse-drives the voltage feedback signal FB. In this case, the voltage feedback signal FB is not pulse-driven until the output voltage V2 rises. As described above, the voltage feedback signal generation circuit 430 may set the duty of the voltage feedback signal FB to 0% when the output voltage V2 is 0 V. Regardless of which configuration is adopted, the detection signal Sx is maintained at a low level until the output voltage V2 rises.

[0186] The soft-start circuit 413 repeats or temporarily suspends the soft-start operation of the output voltage V2 until a voltage feedback signal FB corresponding to the output voltage V2 is detected, in other words, until the input voltage V0 is supplied to the output circuit 420 and the output voltage V2 can be generated.

[0187] With this configuration, it is possible to properly realize the soft start operation of the output voltage V2 without depending on the start-up sequence of the input voltage V0 and the power supply voltage V1. The soft start operation will be described in detail below.

[0188] <Soft start operation (first example)> 15 is a diagram (flowchart) showing a first example of soft-start operation. This flow starts when the power supply voltage V1 is turned on. When the UVLO (under voltage lock out) is released in step S11, the soft-start operation described above, i.e., raising of the overcurrent limit value Vth, starts in the following step S12.

[0189] In step S13, it is determined whether the voltage feedback signal FB is detected. Specifically, it is determined whether the voltage feedback signal FB is pulse-driven, and therefore whether the detection signal Sx is at a low level. The detection determination of the voltage feedback signal FB may be performed, for example, when the overcurrent limit value Vth reaches the set value VssH.

[0190] If the determination in step S13 is YES, the above series of soft start operations is completed. On the other hand, if the determination in step S13 is NO, the flow returns to step S12, and the above-mentioned soft start operations are repeated.

[0191] 16 is a timing chart showing a first example of the soft-start operation. From the top, the diagram depicts a power supply voltage V1, an overcurrent limit value Vth, an input voltage V0, an output voltage V2, and a detection signal Sx.

[0192] In this diagram, after power supply voltage V1 is applied to power supply control device 410 at time t31, input voltage V0 is applied to output circuit 420 at time t33. In other words, the start-up order of input voltage V0 and power supply voltage V1 is reversed. In this case, as shown from time t31 to t32, while overcurrent limit value Vth is gradually increased over the soft-start period Tss, output voltage V2 does not rise at all.

[0193] Therefore, when the overcurrent limit value Vth reaches the set value VssH, that is, at time t32, the detection signal Sx is maintained at a high level. At this time, the overcurrent limit value Vth is not raised to the set value Vocp but is lowered to the set value VssL. The set value VssL can be understood as the overcurrent limit value at the time when the soft-start operation is reset. The set value VssL may be set between the initial value (0 V) of the overcurrent limit value Vth and the set value VssH. For example, the set value VssL may be a voltage value obtained by raising the overcurrent limit value Vth by one step from the initial value (0 V). Alternatively, the overcurrent limit value Vth may be lowered to the initial value (0 V) instead of the set value VssL.

[0194] After that, the overcurrent limit value Vth is increased again. However, when the overcurrent limit value Vth reaches the set value VssH again, the detection signal Sx is still maintained at a high level. Therefore, the soft start operation is not completed, and the reduction (resetting) and gradual increase of the overcurrent limit value Vth is repeated once again.

[0195] In this way, if the detection signal Sx is maintained at a high level when the overcurrent limit value Vth reaches the set value VssH, the soft start operation is not completed but is repeated. In other words, the soft start circuit 413 repeatedly raises the overcurrent limit value Vth and lowers it to the initial value (0 V) or the set value VssL.

[0196] On the other hand, when the input voltage V0 is applied at time t33, the output voltage V2 starts to rise. At this time, the output voltage V2 rises gradually to the target value as the overcurrent limit value Vth is increased in stages.

[0197] Furthermore, as the output voltage V2 rises, the detection signal Sx falls from high to low at time t34. Therefore, when the overcurrent limit Vth subsequently reaches the set value VssH, that is, at time t35, the overcurrent limit Vth is raised to the set value Vocp without being reset. As a result, the soft-start operation is completed.

[0198] With this configuration, even if the input voltage V0 rises after the power supply voltage V1 rises, the soft start operation will not be completed before the output voltage V2 starts up. Therefore, the output voltage V2 rises gradually, and overshoot of the output voltage V2 can be suppressed.

[0199] <Soft start operation (second example)> FIG. 17 is a diagram (flowchart) showing a second example of soft-start operation. This flow starts when the power supply voltage V1 is turned on. When the UVLO is released in step S21, the soft-start operation described above, i.e., the increase in the overcurrent limit value Vth, starts in the following step S22. However, when the overcurrent limit value Vth reaches a set value VssM from the initial value (0V), the increase in the overcurrent limit value Vth is temporarily stopped. The set value VssM can be understood as the overcurrent limit value at the time when the soft-start operation is temporarily stopped. The set value VssM may be set between the initial value (0V) and the set value VssH.

[0200] In step S23, it is determined whether the voltage feedback signal FB is detected. Specifically, it is determined whether the voltage feedback signal FB is pulse-driven, and therefore whether the detection signal Sx is at a low level. If the determination here is YES, the flow proceeds to step S24. On the other hand, if the determination here is NO, the flow returns to step S23, and the detection determination of the voltage feedback signal FB is repeated.

[0201] If the determination in step S23 is YES, the process of increasing the overcurrent limit value Vth resumes in step S24. That is, the overcurrent limit value Vth is increased stepwise from the set value VssM to the set value VssH. When the overcurrent limit value Vth reaches the set value VssH, the above-described series of soft-start operations is completed.

[0202] 18 is a timing chart showing a second example of the soft-start operation. As with FIG. 16, the diagram shows, from top to bottom, the power supply voltage V1, the overcurrent limit value Vth, the input voltage V0, the output voltage V2, and the detection signal Sx.

[0203] In this diagram, after power supply voltage V1 is applied to power supply control device 410 at time t41, input voltage V0 is applied to output circuit 420 at time t43. In other words, the start-up order of input voltage V0 and power supply voltage V1 is reversed. In this case, even if overcurrent limit value Vth is increased, output voltage V2 does not rise.

[0204] Therefore, when the overcurrent limit value Vth reaches the set value VssM, that is, at time t42, the detection signal Sx is maintained at a high level. At this time, the increase in the overcurrent limit value Vth is temporarily halted. The set value VssM may be a voltage value obtained by increasing the overcurrent limit value Vth from its initial value (0 V) by n stages (n is an integer equal to or greater than 1, for example, n=2).

[0205] After that, when the input voltage V0 is applied at time t43, the output voltage V2 starts to rise. At this time, the output voltage V2 rises gradually while the current feedback signal CS is limited to the overcurrent limit value Vth (=VssM).

[0206] Furthermore, as the output voltage V2 increases, the detection signal Sx falls from high to low at time t44. Therefore, the overcurrent limit value Vth is increased in stages from the set value VssM to the set value VssH. At this time, the output voltage V2 gradually increases to the target value as the overcurrent limit value Vth is increased in stages.

[0207] Then, when the overcurrent limit value Vth reaches the set value VssH, that is, at time t35, the overcurrent limit value Vth is raised to the set value Vocp, thereby completing the soft start operation.

[0208] With this configuration, even if the input voltage V0 rises after the power supply voltage V1 rises, the soft start operation will not be completed before the output voltage V2 starts up. Therefore, the output voltage V2 rises gradually, and overshoot of the output voltage V2 can be suppressed.

[0209] <Detection circuit> 19 is a diagram showing an example of the configuration of the detection circuit 414. The detection circuit 414 of this example configuration includes an input node 501, a current source 502, a transistor 503, a capacitor 504, a comparator 505, and an output node 506. The transistor 503 may be, for example, an N-channel type.

[0210] An input node 501 receives the voltage feedback signal FB.

[0211] The current source 502 is connected between the power supply terminal and a first terminal (=application terminal of the charging voltage Vc) of the capacitor 504. The current source 502 generates a charging current Ic for the capacitor 504.

[0212] The drain of the transistor 503 is connected to a first end (= application end of the charging voltage Vc) of the capacitor 504. The source of the transistor 503 is connected to a second end (= ground end) of the capacitor 504. The gate of the transistor 503 is connected to the input node 501 (= application end of the voltage feedback signal FB). The transistor 503 is turned on when the voltage feedback signal FB is at a high level. On the other hand, the transistor 503 is turned off when the voltage feedback signal FB is at a low level. In other words, the transistor 503 makes the connection between both ends of the capacitor 504 conductive or cuts off in response to the voltage feedback signal FB.

[0213] Capacitor 504 is charged by charging current Ic when transistor 503 is in the off state, while capacitor 504 is discharged when transistor 503 is in the on state. The voltage across capacitor 504 corresponds to charging voltage Vc.

[0214] The comparator 505 compares the charging voltage Vc input to its non-inverting input terminal (+) with the reference voltage Vref input to its inverting input terminal (-) to generate a detection signal Sx. The detection signal Sx goes high when the charging voltage Vc is higher than the reference voltage Vref. On the other hand, the detection signal Sx goes low when the charging voltage Vc is lower than the reference voltage Vref.

[0215] The output node 506 outputs the detection signal Sx.

[0216] 20 is a diagram showing an example of the detection operation in the detection circuit 414. In this diagram, from the top, the output voltage V2, the voltage feedback signal FB, the charging voltage Vc (solid line), the reference voltage Vref (dashed line), and the detection signal Sx are depicted.

[0217] In particular, for convenience of explanation, this diagram depicts the output voltage V2 repeatedly alternating between 0 V and the target value. Note that the first state φ1 in which the output voltage V2 is 0 V can be understood as a state in which the output voltage V2 is not activated. On the other hand, the second state φ2 in which the output voltage V2 is the target value can be understood as a state in which the activation of the output voltage V2 is completed.

[0218] In the first state φ1, the voltage feedback signal FB is not pulse-driven and is fixed at a low level. Therefore, the transistor 503 is maintained in an off state. At this time, the capacitor 504 is charged by the charging current Ic, and the charging voltage Vc rises. When the charging voltage Vc becomes higher than the reference voltage Vref, the detection signal Sx rises to a high level. The rising timing of the detection signal Sx is delayed by a time Td from the transition timing to the first state φ1.

[0219] On the other hand, in the second state φ2, the voltage feedback signal FB is pulse-driven. Therefore, the transistor 503 is periodically turned on and off. At this time, the capacitor 504 is periodically charged and discharged, so the charging voltage Vc does not exceed the reference voltage Vref. Therefore, the detection signal Sx is maintained at a low level.

[0220] <Switching power supply (fourth embodiment)> 21 is a diagram showing a fourth embodiment of the switching power supply 400. The switching power supply 400 of this embodiment is based on the first embodiment (FIG. 10) described above, with a modification made to the voltage feedback signal generating circuit 430.

[0221] Referring to this figure, the voltage feedback signal generating circuit 430 includes a tertiary coil Lt, a capacitor C2, a diode D2, and a resistor R2 in place of the previously mentioned insulating circuit ISO.

[0222] The tertiary coil Lt may be wound around a core FC so as to be electromagnetically coupled to the primary coil Lp and the secondary coil Ls. A first end (e.g., a winding start end) of the tertiary coil Lt is connected to the anode of a diode D2. The cathode of the diode D2 and the first ends of the capacitor C2 and resistor R2 are connected to an application terminal for a voltage feedback signal FB. A second end (e.g., a winding end) of the tertiary coil Lt and the second ends of the capacitor C2 and resistor R2 are connected to an application terminal for a ground voltage GND1.

[0223] Diode D2 and capacitor C2 correspond to a rectifying and smoothing circuit that generates a voltage feedback signal FB from the signal induced in the tertiary coil Lt. Resistor R2 corresponds to a bleeder resistor that suppresses errors between the output voltage V2 and the voltage feedback signal FB due to the influence of the load.

[0224] As described above, in the switching power supply 400 of this embodiment, feedback control of the output voltage V2 is performed by a so-called indirect feedback method. Even when this feedback control is employed, the power supply control device 410 may employ the third embodiment (FIG. 14) described above. That is, the soft-start operation of the first example (FIGS. 15 and 16) or the soft-start operation of the second example (FIGS. 17 and 18) makes it possible to appropriately achieve soft-start operation of the output voltage V2 without depending on the startup sequence of the input voltage V0 and the power supply voltage V1.

[0225] <Application to vehicles> 22 is a diagram showing the exterior of a vehicle. Vehicle B of this configuration example is equipped with various electronic devices that operate with power supplied from a battery.

[0226] Vehicle B includes not only engine vehicles but also electric vehicles (battery electric vehicles (BEVs), hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs / PHVs), or xEVs such as fuel cell electric vehicles (FCEVs / FCVs)).

[0227] The signal transmission device 200 and the switching power supply 400 described above can be incorporated into any of the various electronic devices A mounted on the vehicle B. In addition to the above, the signal transmission device 200 and the switching power supply 400 can also be widely used in general applications requiring isolated communication and isolated power supplies, such as industrial equipment.

[0228] <Additional Notes> The power supply control device according to the present disclosure can achieve a soft start of the output voltage without relying on a power-on sequence.

[0229] [Appendix 1] A power supply control device (410) configured to control a primary current (Ip) of a switching power supply (400) that generates an output voltage (V2) of a secondary circuit system (200s) from an input voltage (V0) of the primary circuit system (200p) while isolating the primary circuit system (200p) from a secondary circuit system (200s), an overcurrent protection circuit (412) configured to limit the primary current (Ip, CS) to an overcurrent limit value (Vth) or less; a soft start circuit (413) configured to gradually increase the overcurrent limit value (Vth) from an initial value (0V) to a first set value (VssH) after a power supply voltage (V1) is applied to the power supply control device (410); Equipped with The soft-start circuit (413) repeatedly increases the overcurrent limit value (Vth) and decreases it to the initial value (0 V) or a second set value (VssL) set between the initial value (0 V) and the first set value (VssH) until a feedback signal (FB) corresponding to the output voltage (V2) is detected, or temporarily suspends the increase of the overcurrent limit value (Vth) at a third set value (VssM) set between the initial value (0 V) and the first set value (VssH).

[0230] [Appendix 2] 2. The power control device (410) of claim 1, further comprising a detection circuit (414) configured to detect the feedback signal (FB).

[0231] [Appendix 3] The power supply control device (410) of Appendix 2, wherein the detection circuit (414) includes a capacitor (504), a current source (502) configured to generate a charging current (Ic) for the capacitor (504), a transistor (503) configured to turn on / off the capacitor (504) in response to the feedback signal (FB), and a comparator (505) configured to compare the charging voltage (Vc) of the capacitor (504) with a reference voltage (Vref) to generate a detection signal (Sx).

[0232] [Appendix 4] 4. The power supply control device (410) according to any one of appendices 1 to 3, wherein the input voltage (V0) and the power supply voltage (V1) are applied asynchronously.

[0233] [Appendix 5] A power supply control device (410) according to any one of Supplementary Notes 1 to 4; an output circuit (420) configured to be switched by the power supply control device (410) and generate the output voltage (V2) from the input voltage (V0); a feedback signal generating circuit (430) configured to generate the feedback signal (FB); A switching power supply (400).

[0234] [Appendix 6] The switching power supply (400) according to Appendix 5, wherein the feedback signal generating circuit (430) includes an isolation circuit (ISO) configured to receive the output voltage (V2) as an input and output the feedback signal (FB) while providing insulation between the primary circuit system (200p) and the secondary circuit system (200s).

[0235] [Appendix 7] The switching power supply (400) according to Appendix 5, wherein the output circuit (420) includes a primary coil (Lp) configured to allow the primary current (Ip) to flow, and a secondary coil (Ls) configured to be coupled to the primary coil (Lp), and the feedback signal generating circuit (430) includes a tertiary coil (Lt) configured to be coupled to the primary coil (Lp) and the secondary coil (Ls), and a rectifying and smoothing circuit (D2, C2) configured to generate the feedback signal (FB) from a signal induced in the tertiary coil (Lt).

[0236] [Appendix 8] A switching power supply (400) according to any one of Supplementary Notes 5 to 7; a signal transmission circuit (211, 223, 231, 232, etc.) configured to transmit signals while insulating the primary circuit system (200p) and the secondary circuit system (200s); A signal transmission device (200) comprising:

[0237] [Appendix 9] An electronic device (A) comprising a signal transmission device (200) according to any one of appendices 1 to 8.

[0238] [Appendix 10] A vehicle (B) equipped with an electronic device (A) according to Appendix 9.

[0239] <Other> In addition to the above-described embodiments, the various technical features disclosed in this specification can be modified in various ways without departing from the spirit of the technical creation. In other words, the above-described embodiments should be considered to be illustrative and not restrictive in all respects. Furthermore, the technical scope of the present disclosure is defined by the claims, and should be understood to include all modifications that fall within the meaning and scope equivalent to the claims. [Explanation of symbols]

[0240] 5. Semiconductor Devices 11, 11A~11F Low potential terminal 12, 12A~12F high potential terminal 21, 21A~21D Transformer 22 Low potential coil (primary coil) 23 High potential coil (secondary coil) 24 1st medial end 25 First outer end 26 1st spiral part 27 Second medial end 28 Second outer end 29 Second spiral part 31 1st low potential wiring 32 2nd low potential wiring 33 1st high potential wiring 34 2nd high potential wiring 41 Semiconductor chips 42 First main surface 43 Second main surface 44A~44D Chip sidewall 45 First Functional Device 51 Insulating layer 52 Main insulating surface 53A~53D Insulated sidewall 55 Bottom insulating layer 56 Top insulating layer 57 Interlayer insulation layer 58 First insulating layer 59 Second insulating layer 60 Second Function Device 61 Sealed conductor 62 Device Area 63 Outer area 64 Seal plug conductor 65 Seal via conductor 66 1st medial area 67 Second medial area 71 Through-wiring 72 Low-potential connection wiring 73 Lead Wiring 74 First connecting plug electrode 75 Second connecting plug electrode 76 Pad plug electrode 77 PCB plug electrode 78 1st electrode layer 79 Second electrode layer 80 Wiring plug electrode 81 High-potential connection wiring 82 Pad plug electrode 85 Dummy Pattern 86 High-potential dummy pattern 87 First high potential dummy pattern 88 Second high potential dummy pattern 89 First area 90 Second area 91 Third area 92 First connection part 93 First Pattern 94 Second Pattern 95 Third Pattern 96 First Outer Line 97 Second Outer Line 98 First Intermediate Line 99 First connecting line 100 slits 130 Separation structure 140 Inorganic insulating layer 141 First inorganic insulating layer 142 Second inorganic insulating layer 143 Low potential pad opening 144 High potential pad opening 145 Organic insulating layer 146 Part 1 147 Part 2 148 Low potential terminal opening 149 High potential terminal opening 200 Signal Transmission Device 200p primary circuit system 200s Secondary circuit system 210 Controller Chip (1st Chip) 211 Pulse transmitting circuit (pulse generator) 212, 213 buffer 220 Driver Chip (Second Chip) 221, 222 buffer 223 Pulse receiving circuit (RS flip-flop) 224 Driver 230 Transformer Chip (3rd Chip) 230a 1st wiring layer (lower layer) 230b 2nd wiring layer (upper layer) 231, 232 transformer 231p, 232p Primary coil 231s, 232s Secondary coil 300 Trans Chip 301 1st transformer 302 2nd transformer 303 Third Transformer 304 4th Transformer 305 1st Guard Ring 306 Second Guard Ring 400 Switching Power Supply 410 Power supply control device 411 Power supply control circuit 412 Overcurrent protection circuit 413 Soft Start Circuit 414 Detection Circuit 420 Output Circuit 430 Voltage feedback signal generation circuit 501 input nodes 502 Current source 503 Transistor 504 Capacitor 505 Comparator 506 Output Nodes a1 to a8 pads (corresponding to the first current supply pads) b1~b8 pads (corresponding to the first voltage measurement pads) c1 to c4 pads (corresponding to the second current supply pads) d1~d4 pads (corresponding to the second voltage measurement pads) e1, e2 pads A Electronic equipment B vehicle C1, C2 capacitors D1, D2 diodes FC Core ISO isolation circuit L1p, L2p, Lp primary coil L1s, L2s, L3s, L4s, Ls Secondary coil Lt Tertiary coil M1 Output transistor R1, R2 resistance SNUB snubber circuit T21, T22, T23, T24, T25, T26 external terminals TR transformer X 1st direction X21, X22, X23 Internal terminals Y Second direction Y21, Y22, Y23 wiring Z normal direction Z21, Z22, Z23 vias

Claims

1. 1. A power supply control device configured to control a primary current of a switching power supply that generates an output voltage of a secondary circuit system from an input voltage of a primary circuit system while isolating the primary circuit system from a secondary circuit system, an overcurrent protection circuit configured to limit the primary current to an overcurrent limit value; a soft start circuit configured to gradually increase the overcurrent limit value from an initial value to a first set value after a power supply voltage is applied to the power supply control device; Equipped with a soft start circuit that repeatedly raises the overcurrent limit value and lowers it to the initial value or a second set value that is set between the initial value and the first set value, until a feedback signal corresponding to the output voltage is detected, or that temporarily suspends the raising of the overcurrent limit value at a third set value that is set between the initial value and the first set value.

2. The power control device of claim 1 further comprising a detection circuit configured to detect the feedback signal.

3. 3. The power supply control device according to claim 2, wherein the detection circuit includes: a capacitor; a current source configured to generate a charging current for the capacitor; a transistor configured to turn on / off conduction across the capacitor in response to the feedback signal; and a comparator configured to compare a charging voltage of the capacitor with a reference voltage to generate a detection signal.

4. 2. The power supply control device according to claim 1, wherein the input voltage and the power supply voltage are applied asynchronously.

5. The power supply control device according to claim 1 ; an output circuit configured to be switched by the power supply control device to generate the output voltage from the input voltage; a feedback signal generation circuit configured to generate the feedback signal; A switching power supply comprising:

6. 6. The switching power supply according to claim 5, wherein the feedback signal generating circuit includes an isolation circuit configured to receive an input of the output voltage and output the feedback signal while insulating between the primary circuit system and the secondary circuit system.

7. the output circuit includes a primary coil configured to pass the primary current, and a secondary coil configured to be coupled to the primary coil; 6. The switching power supply according to claim 5, wherein the feedback signal generating circuit includes: a tertiary coil configured to be coupled to the primary coil and the secondary coil; and a rectifying and smoothing circuit configured to generate the feedback signal from a signal induced in the tertiary coil.

8. A switching power supply according to claim 5; a signal transmission circuit configured to transmit signals while isolating the primary circuit system from the secondary circuit system; A signal transmission device comprising:

9. An electronic device comprising the signal transmission device according to any one of claims 1 to 8.

10. A vehicle comprising the electronic device according to claim 9.

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