Component, component manufacturing method, and semiconductor manufacturing-related equipment

Abstract

A member having excellent chemical resistance, a manufacturing method thereof, and semiconductor manufacturing-related equipment are provided. A member in which at least a portion of the surface of a material (a) is laminated with a carbon material, The component is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

Description

[Technical Field]

[0001] The present disclosure relates to a component, a method for manufacturing the component, and a semiconductor manufacturing-related device. [Background technology]

[0002] BACKGROUND ART Techniques have been proposed for coating substrates in semiconductor manufacturing equipment to prevent contamination, etc. (see, for example, Patent Documents 1 to 3). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-21369 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-239151 [Patent Document 3] Japanese Patent Application Laid-Open No. 2011-23563 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment. [Means for solving the problem]

[0005] The present disclosure (1) is a member in which at least a part of the surface of a material (a) is laminated with a carbon material, The member is at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials.

[0006] The present disclosure (2) is the member according to the present disclosure (1), wherein the carbon material is at least one selected from the group consisting of DLC (diamond-like carbon) and diamond.

[0007] The present disclosure (3) is the member according to the present disclosure (1), wherein the carbon material is DLC (diamond-like carbon).

[0008] The present disclosure (4) is a member in any combination with any of the present disclosures (1) to (3), wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

[0009] The present disclosure (5) is a member in any combination with any of the present disclosures (1) to (4), wherein the material (a) is at least one selected from the group consisting of resin and rubber.

[0010] The present disclosure (6) is a member of any combination with any of the present disclosures (1) to (5), wherein the material (a) is at least one selected from the group consisting of polyether ether ketone resin and polyphenylene sulfide.

[0011] The present disclosure (7) is a member of any combination with any of the present disclosures (1) to (6), wherein the material (a) has a temperature of 560° C. or less when it loses 1% by mass through thermal decomposition.

[0012] The present disclosure (8) is a member in any combination with any of the present disclosures (1) to (7), wherein the coating containing the carbon material has a thickness of 0.01 to 100 μm.

[0013] The present disclosure (9) is a member in any combination with any of the present disclosures (1) to (8), wherein the coating containing the carbon material has a thickness of 0.1 to 10 μm.

[0014] The present disclosure (10) is a component in any combination with any of the present disclosures (1) to (9), wherein the component is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0015] The present disclosure (11) is a member that can be arbitrarily combined with any of the present disclosures (1) to (10) in which the member is a member for semiconductor manufacturing related equipment.

[0016] The present disclosure (12) is the member according to the present disclosure (11), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0017] The present disclosure (13) provides that the drug is TMAH([(CH3)4N] + [OH] - ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid.

[0018] The present disclosure (14) is the member according to the present disclosure (12), wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0019] The semiconductor manufacturing-related equipment member of the present disclosure (15) is a member of any combination with any of the present disclosures (12) to (14), in which at least a part of the surface that comes into contact with the chemical is laminated with the carbon material.

[0020] The semiconductor manufacturing related equipment component of the present disclosure (16) is a semiconductor manufacturing related equipment component in which chemicals are used within the equipment, and is a component in any combination with any of the present disclosures (11) to (15), in which at least a portion of the surface that comes into contact with the chemicals is laminated with the carbon material.

[0021] The present disclosure (17) is a member that can be arbitrarily combined with any of the present disclosures (1) to (16), in which the mass change rate in the following chemical resistance evaluation is 50.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0022] The present disclosure (18) is a member that can be arbitrarily combined with any of the present disclosures (1) to (17) and has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 2 mm, thickness of coating: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0023] The present disclosure (19) is a method for producing a member in any combination with any of the present disclosures (1) to (18), in which the member is produced under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

[0024] The present disclosure (20) is a method for producing a member according to the present disclosure (19), comprising a step of depositing the carbon material on a surface of the material (a) by using CVD, sputtering, ion vapor deposition, or arc ion plating.

[0025] The present disclosure (21) is a semiconductor manufacturing-related device equipped with any combination of members of the present disclosures (1) to (18).

[0026] The present disclosure (22) is a semiconductor manufacturing related device of the present disclosure (21), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0027] The present disclosure (23) is directed to the semiconductor manufacturing apparatus, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography process apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a CVD apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus; The semiconductor manufacturing-related device of the present disclosure (22) is at least one selected from the group consisting of a pure water / chemical liquid device, a gas device, a clean room device, and manufacturing-related devices.

[0028] The present disclosure (24) is directed to the photolithography process apparatus, wherein the photolithography process apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a descum apparatus, the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; The inspection and evaluation device and manufacturing device are defect repair devices, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, and an ashing device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, the cleaning / drying device is at least one selected from the group consisting of a wet cleaning device, a scrub cleaning device, and a drying device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial growth apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus, the processing device is a bump plating device, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; the inspection device is a life test device, the pure water / chemical device is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; the clean room device is at least one selected from the group consisting of a thermal chamber and an environmental testing device; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a measuring device for liquids and gases, which is a semiconductor manufacturing-related equipment of the present disclosure (23). [Effects of the Invention]

[0029] According to the present disclosure, it is possible to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment. DETAILED DESCRIPTION OF THE INVENTION

[0030] The present disclosure will be specifically described below.

[0031] The present disclosure provides a member in which at least a portion of the surface of a material (a) is laminated with a carbon material, The component is at least one selected from the group consisting of construction materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials. The members of the present disclosure have excellent chemical resistance.

[0032] In the member of the present disclosure, at least a portion of the surface of the material (a) is laminated with a carbon material.

[0033] The material (a) is not particularly limited, and known organic or inorganic materials can be used, specifically, resin, rubber, metal, ceramic, etc. The material (a) is preferably an organic material. The material (a) is preferably at least one selected from the group consisting of resin, rubber, metal, and ceramic, and more preferably at least one selected from the group consisting of resin and rubber.

[0034] The resin is not particularly limited, and known resins can be used. Examples include polyolefin resins, polyester resins, polyamide (PA) resins, fluororesins, etc. Heat-resistant resins such as engineering plastic resins and super engineering plastic resins can also be suitably used.

[0035] As the resin, from the viewpoint of improving adhesion to the carbon material, a non-fluorine-containing resin (a resin that does not contain fluorine) or a heat-resistant resin is preferred, and a heat-resistant resin that does not contain fluorine is more preferred.

[0036] The heat-resistant resin may be any resin that is generally recognized as having heat resistance, but it is preferable to use a heat-resistant resin other than a fluorine-containing ethylenic polymer (an ethylenic polymer containing fluorine). In this specification, "heat resistance" means the property of being able to be used continuously at temperatures of 150°C or higher.

[0037] Examples of the heat-resistant resin include polyamideimide resin (PAI), polyimide resin (PI), polyethersulfone resin (PES), polyetherimide resin, aromatic polyetherketone resin (PAEK), aromatic polyester resin, and polyarylene sulfide resin (PAS), and one type may be used alone or two or more types may be used in combination.

[0038] PAI is a resin made of a polymer having amide and imide bonds in its molecular structure. The PAI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by various reactions, such as the reaction of an aromatic diamine having an amide bond in its molecule with an aromatic tetracarboxylic acid such as pyromellitic acid; the reaction of an aromatic tricarboxylic acid such as trimellitic anhydride with a diamine such as 4,4-diaminophenyl ether or a diisocyanate such as diphenylmethane diisocyanate; and the reaction of a dibasic acid having an aromatic imide ring in its molecule with a diamine. From the viewpoint of excellent heat resistance, the PAI is preferably made of a polymer having an aromatic ring in its main chain. PAI features include high thermal stability, abrasion resistance, and creep resistance that is resistant to deformation even under load. Furthermore, it is thermoplastic and has excellent melt processability, allowing it to be molded by extrusion or compression molding. Furthermore, the MFR (melt flow rate) is preferably in the range of 10 to 80 g / 10 min.

[0039] PI is a resin made of a polymer having an imide bond in its molecular structure. The PI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by the reaction of aromatic tetracarboxylic anhydrides such as pyromellitic anhydride. From the viewpoint of excellent heat resistance, the PI is preferably made of a polymer having an aromatic ring in the main chain. PIs are characterized by high heat resistance, insulating properties, low dielectric constant, low dielectric loss, radiation resistance, etc., and are classified into non-thermoplastic polyimides, thermoplastic polyimides, thermosetting polyimides, and soluble polyimides. Furthermore, the MFR (melt flow rate) is preferably in the range of 0.1 to 50 g / 10 min.

[0040] PES has the following general formula:

[0041] [ka]

[0042] It is a resin made of a polymer having a repeating unit represented by the formula: PES is not particularly limited, and examples thereof include resins made of a polymer obtained by polycondensation of dichlorodiphenyl sulfone and bisphenol. PES is characterized by being an amorphous plastic with a high heat resistance, a glass transition temperature (Tg) of 225°C, and in addition to high heat resistance, it has excellent properties such as dimensional stability, high fluidity, and flame retardancy, and is used in a wide range of industrial fields, such as housings for electric and electronic components and automotive parts. In addition, the MFR (melt flow rate) is preferably in the range of 5 to 60 g / 10 min.

[0043] The aromatic polyetherketone resin is a resin containing a repeating unit composed of an arylene group, an ether group [-O-], and a carbonyl group [-C(=O)-]. Examples of the aromatic polyetherketone resin include polyetherketone resin (PEK), polyetheretherketone resin (PEEK), polyetherketoneketone resin (PEKK), polyetheretherketoneketone resin (PEEKK), and polyetherketoneester resin. The aromatic polyetherketone resins can be used alone or in combination of two or more. The aromatic polyether ketone resin is preferably at least one selected from the group consisting of PEK, PEEK, PEKK, PEEKK, and polyether ketone ester resins, more preferably at least one selected from the group consisting of PEEK and PEKK, and more preferably PEEK. PEEK has a high continuous use temperature of 260°C and excellent heat resistance, hot water resistance, flame retardancy, mechanical properties, and electrical properties, and is used in the fields of aerospace, automobiles, medical devices, 3D printers, food, and semiconductors. Furthermore, the melt flow rate (MFR) is preferably in the range of 1 to 20 g / 10 min.

[0044] PAS has the following general formula:

[0045] [ka]

[0046] (wherein Ar represents an arylene group). The PAS is a resin made of a polymer having a repeating unit represented by the formula: (wherein Ar represents an arylene group). The PAS is not particularly limited, and examples thereof include polyphenylene sulfide (PPS). PPS is characterized by being a thermoplastic resin with a normal heat resistance temperature of 220 to 240°C and cold resistance down to -20°C. It has excellent fatigue properties and creep resistance, and also has good weather resistance and hydrolysis resistance. It is a flame-retardant material without the addition of a flame retardant, and also has heat shock resistance. It also has good moldability and a high degree of freedom in the shape of molded products, so it is used in the electrical and electronic parts field for connectors, various electronic parts, and automotive parts. Furthermore, the MFR (melt flow rate) is preferably in the range of 10 to 50 g / 10 min.

[0047] The heat-resistant resin is preferably at least one selected from the group consisting of PAI, PI, PES, aromatic polyether ketone resin, and PAS, more preferably at least one selected from the group consisting of aromatic polyether ketone resin and PAS, and even more preferably an aromatic polyether ketone resin.

[0048] The rubber may be either fluororubber or non-fluororubber (rubber not containing fluorine). Specific examples include diene rubbers such as fluororubber, acrylonitrile-butadiene rubber (NBR) or its hydride (HNBR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), butadiene rubber (BR), natural rubber (NR), isoprene rubber (IR), and cyclopentene rubber (CPR), ethylene-propylene-termonomer copolymer rubber, silicone rubber, butyl rubber, epichlorohydrin rubber, acrylic rubber, chlorinated polyethylene (CPE), chlorosulfonated ethylene rubber (CSM), polyblends of acrylonitrile-butadiene rubber and vinyl chloride (PVC-NBR), ethylene propylene diene rubber (EPDM), and ethylene propylene rubber (EPM). Among these, non-fluororubber is preferred from the viewpoint of improving adhesion to carbon materials.

[0049] The metal is not particularly limited, and known metals can be used, including iron, steel, non-ferrous metals, etc. Examples of steel include SPC material, SS material, SC material, SK material, stainless steel, chromium-molybdenum high-tensile steel, white cast iron, gray cast iron, and spheroidal graphite cast iron. Examples of non-ferrous metals include aluminum-aluminum alloy, copper-copper alloy, zinc-zinc alloy, titanium-titanium alloy, magnesium-magnesium alloy, and nickel-nickel alloy.

[0050] The ceramic is not particularly limited, and known ceramics can be used, such as alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, silicon nitride, forsterite, steatite, cordierite, sialon, machinable ceramics, barium titanate, lead zirconate, ferrite, and mullite.

[0051] Alumina has the characteristics of excellent electrical insulation, heat resistance, abrasion resistance, mechanical strength, and relatively high thermal conductivity, making it highly versatile.

[0052] Zirconia has excellent thermal properties, a melting point of 2700°C, a maximum operating temperature of approximately 1200°C, a high thermal shock resistance of Δ400°C, and a significantly lower thermal conductivity than other ceramics.

[0053] Aluminum nitride is characterized by its extremely high thermal conductivity, excellent heat dissipation, insulation, and thermal shock resistance, and is used as a substrate material. Aluminum nitride substrates can be metallized.

[0054] Silicon carbide is characterized by its chemical and physical stability, high hardness, extremely high thermal conductivity compared to other ceramics, and semi-conductivity.

[0055] Silicon oxide is characterized by its excellent heat resistance and thermal shock resistance, with a Vickers hardness of 8.6 to 9.8 GPa.

[0056] Silicon nitride is characterized by its low coefficient of thermal expansion, chemical stability, and excellent wear resistance and electrical insulation, making it used in a wide range of industrial fields.

[0057] Forsterite is characterized by its high insulation resistance and is widely used as an electrical insulating material. Its dielectric constant is 6.5 and its dielectric loss tangent (Tan δ) is small, making it useful as a high-frequency insulating material.

[0058] The characteristics of steatite are low high frequency loss, high insulation resistance at high temperatures, and high mechanical strength.

[0059] A characteristic of cordierite is that when heated, the crystals expand in the radial direction and contract in the height direction.

[0060] The characteristics of sialon include excellent heat resistance, mechanical strength in high-temperature environments, thermal shock resistance, and wear resistance, as well as low thermal expansion, high rigidity, and corrosion resistance.

[0061] Machinable ceramics are characterized by their ease of cutting, suitability for fine and precision machining, and low porosity, which reduces outgassing and helium permeation, providing stable performance even in a vacuum.

[0062] Barium titanate is characterized by its extremely high dielectric constant, which makes it widely used as a dielectric material for multilayer ceramic capacitors and the like, and its extremely high refractive index, which makes it also used as an optical material.

[0063] Lead zirconate is characterized by a large piezoelectric charge coefficient, a medium dielectric constant, and a high coupling coefficient.

[0064] The characteristics of ferrite are that it is a magnetic material that can become a strong magnet, is less conductive to electricity than metallic magnetic materials, and because it is a baked oxide (porcelain), it is resistant to rust and chemicals.

[0065] Mullite oxide is characterized by its excellent heat resistance, impact resistance, and abrasion resistance, and can be produced at relatively low cost.

[0066] Among the above ceramics, zirconia, aluminum nitride, silicon oxide, forsterite, steatite, cordierite, and sialon are preferred, with zirconia, aluminum nitride, and silicon oxide being particularly preferred, from the viewpoint of increasing the effect of laminating with a carbon material.

[0067] The material (a) preferably has a temperature at which it loses 1% by mass due to thermal decomposition (hereinafter also referred to as 1% thermal decomposition temperature) of 560° C. or lower. From the viewpoint of improving chemical resistance, the upper limit of the 1% thermal decomposition temperature is more preferably 500°C, and even more preferably 450°C. The lower limit is not particularly limited, but is preferably 150°C, more preferably 200°C, and even more preferably 250°C. The 1% thermal decomposition temperature is measured using a thermal analyzer, STA7200, manufactured by Hitachi High-Tech Science Corporation. Measurements are performed under a nitrogen purge atmosphere at 200 mL / min. 10 mg of sample is placed in an aluminum pan, held at 25°C for 10 minutes, and then heated to 600°C at a rate of 10°C / min. The temperature at which the mass decreases by 1% from the initial mass is defined as the 1% thermal decomposition temperature.

[0068] To enhance adhesion, the material (a) may be degreased in advance, preferably by wiping with ethanol or isopropyl alcohol or ultrasonic cleaning, though not particularly limited thereto. Pretreatments include roughening the surface by sandblasting or the like, or by chemical conversion treatment such as anodizing, or by plasma or corona treatment, with plasma or corona treatment being particularly preferred.

[0069] The material (a) may be surface-treated with any known method to enhance adhesion, although this is not particularly limited. Specifically, the material may be treated with a silane coupling agent, such as an epoxysilane, aminosilane, isocyanatesilane, vinylsilane, acrylicsilane, hydrophobic alkylsilane, phenylsilane, or fluorinated alkylsilane, which has a reactive functional group.

[0070] Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltriethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino silanes such as aminopropyltriethoxysilane and N-phenylaminopropyltrimethoxysilane, isocyanate silanes such as 3-isocyanatepropyltrimethoxysilane, vinyl silanes such as vinyltrimethoxysilane, and acrylic silanes such as acryloxytrimethoxysilane, with 3-aminopropyltriethoxysilane, vinyltrimethoxysilane, and 3-methacryloxypropyltriethoxysilane being preferred.

[0071] In this specification, the carbon material is a material containing carbon, and desirably contains at least one selected from the group consisting of fullerene, carbon nanotube, graphite, amorphous carbon, and carbyne containing no hydrogen. The carbon material can be any material that can form a carbon-containing coating on the surface of the material (a) without any particular limitations. Among them, from the viewpoint of chemical resistance, the carbon material is preferably at least one selected from the group consisting of DLC (diamond-like carbon) and diamond, and more preferably DLC.

[0072] Examples of the carbon-containing film formed on the surface of the material (a) include thin films containing carbon as a main component, such as diamond-like carbon films (DLC films), carbon nitride films (CN films), and amorphous carbon films. Of these, DLC films are preferred.

[0073] The carbon-containing film can be formed by a known deposition film forming method. For example, carbon-containing coatings can be formed by CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition). Examples of CVD include plasma CVD, thermal CVD, and photo-CVD. Examples of PVD include sputtering, arc ion plating, ion vapor deposition, ion beam, and laser ablation. Of these, CVD, sputtering, ion vapor deposition, and arc ion plating are preferred.

[0074] When forming a carbon film by CVD, the source gas is, for example, C X H Y (C represents carbon, H represents hydrogen, and X and Y represent integers of 1 or more). In this case, the carbon film may contain hydrogen atoms as impurity atoms. On the other hand, when a carbon film is formed by PVD, the carbon film often contains hydrogen atoms as impurity atoms. Therefore, a carbon-containing film formed by CVD or PVD may contain hydrogen atoms as impurity atoms.

[0075] The carbon-containing film can also be formed by carrying out a composite surface treatment. The composite surface treatment is a technique in which two or more surface treatments are performed on a substrate (material (a)). By performing composite surface treatments, it is possible to improve the properties compared to when only one surface treatment is performed.

[0076] As the composite surface treatment, for example, PHN (nitriding) and PH coating can be used to form a carbon film on the substrate (material (a)). For example, by using "PHN (nitriding)" and "PH coating (DLC)" as the composite surface treatment, it is possible to improve the adhesion of DLC. Nitriding is a technology that hardens the area around the substrate surface by diffusing and penetrating nitrogen (N) into the substrate surface. Among these, PHN (nitriding) is a nitriding method that uses plasma in a vacuum. The PH coating is a technique for forming a film on a substrate using the arc ion plating method, sputtering method, or the like, which are part of the PVD method.

[0077] In the member of the present disclosure, from the viewpoint of chemical resistance, the coating containing the carbon material preferably has a thickness of 0.01 to 100 μm. The lower limit of the film thickness is more preferably 0.05 μm, and even more preferably 0.1 μm. The upper limit of the film thickness is more preferably 50 μm, and even more preferably 10 μm.

[0078] The coating containing the carbon material preferably has a carbon material content of 90 to 100 mass % in the coating (100 mass %). The lower limit of the content is more preferably 95% by mass, and even more preferably 98% by mass. The upper limit of the purity of the carbon material is not particularly limited, and may be 100% by mass.

[0079] The member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials. As the member, a semiconductor material is preferred because of its excellent chemical resistance, and a semiconductor manufacturing-related equipment member (semiconductor manufacturing-related equipment article) is more preferred.

[0080] Examples of the building materials (construction materials) include interior building materials such as baseboards, ceiling materials, and plumbing materials, and exterior building materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, etc. Examples of the aerospace members include exterior and interior materials for aircraft, rockets, etc., electric wire covering materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the semiconductor materials include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related devices. Examples of the information communication members include parts of devices such as wireless LAN transmission / reception circuits, circuit boards, and parts of devices such as optical communication devices.

[0081] The member of the present disclosure is suitable for at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, as they require chemical resistance, and is particularly suitable for use in the piping, nozzles, tubes, and the like in semiconductor manufacturing equipment.

[0082] The piping is not particularly limited, but examples of its shape include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, a bellows pipe with a large diameter that can be bent, etc. The inside of the piping may be polished with high precision so as not to generate dust and not to disturb the liquid flow or gas flow.

[0083] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0084] The tube is not particularly limited, but the diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. A material having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) is used.

[0085] The tank or container is not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0086] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 to 40.0 mm, more preferably in the range of Φ3.2 to 12.7 mm.

[0087] The pump is not particularly limited, but may be required to have retractability.

[0088] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0089] Although there are no particular limitations on O-rings and sealing materials, the material properties required may include excellent elasticity, good compression set, excellent wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore may require high heat resistance, chemical resistance, and plasma resistance.

[0090] The packing and gasket are not particularly limited, but may be required to have a low coefficient of friction and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage.

[0091] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0092] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor Conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonder These include equipment such as bonding equipment, outer lead bonding equipment, flip chip bonding equipment, packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (probers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment). Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0093] Among these, from the perspective of laminating carbon materials and taking advantage of their chemical resistance properties, we offer photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (wet cleaning equipment, Preferred are scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life test equipment). Preferred examples of equipment related to semiconductor manufacturing equipment include pure water and chemical liquid equipment (chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0094] As described above, the components of the present disclosure can be suitably used as components for semiconductor manufacturing-related equipment (articles for semiconductor manufacturing-related equipment), but due to their excellent chemical resistance, they are more suitable as components constituting semiconductor manufacturing-related equipment in which chemicals are used within the equipment.

[0095] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0096] Specific examples of the chemical include TMAH([(CH3)4N] + [OH] - ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid. Among them, TMAH([(CH3)4N] + [OH] - ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid are preferred, with a mixed acid of hydrofluoric acid and nitric acid, SPM, and hydrofluoric acid being more preferred, and a mixed acid of hydrofluoric acid and nitric acid being even more preferred.

[0097] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0098] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic fluoride (III), arsenic fluoride (V), arsenic chloride (III), and arsenic chloride (V). Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0099] In order to ensure chemical resistance, it is preferable that at least a portion of the surface of the semiconductor manufacturing-related equipment member (semiconductor manufacturing-related equipment article) that comes into contact with the chemicals is laminated with the carbon material, and it is more preferable that the entire surface that comes into contact with the chemicals is laminated with the carbon material.

[0100] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0101] The upper limit of the mass change rate is more preferably 35.0% by mass, even more preferably 25.0% by mass, and even more preferably 10.0% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0102] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0103] The upper limit of the mass change rate is more preferably 15.0% by mass, even more preferably 10.0% by mass, and even more preferably 5.0% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0104] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in SPM (a volumetric mixture of concentrated sulfuric acid and hydrogen peroxide solution at a ratio of 1:0.25 to 1) and kept at 80°C for one day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0105] The upper limit of the mass change rate is more preferably 30.0% by mass, even more preferably 20.0% by mass, and even more preferably 18.0% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0106] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 2 mm, thickness of coating: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0107] The upper limit of the mass change rate is more preferably 3.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0108] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 2 mm, thickness of coating: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0109] The upper limit of the mass change rate is more preferably 3.0% by mass, even more preferably 2.0% by mass, and even more preferably 1.0% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0110] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 28.0 mass % or less in the chemical resistance evaluation described below. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 2 mm, thickness of coating: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in SPM (a volumetric mixture of concentrated sulfuric acid and hydrogen peroxide solution at a ratio of 1:0.25 to 1) and kept at 80°C for one day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0111] The upper limit of the mass change rate is more preferably 20.0% by mass, even more preferably 15.0% by mass, and even more preferably 12.0% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0112] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 10.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] - ) (25% concentration), completely immersed in 80°C and kept for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0113] The upper limit of the mass change rate is more preferably 5.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0114] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 10.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm × 50 mm × 2 mm, thickness of coating: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] - ) (25% concentration), completely immersed in 80°C and kept for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0115] The upper limit of the mass change rate is more preferably 5.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0116] The member of the present disclosure can be manufactured by a manufacturing method including a step of forming a coating containing the carbon material on the surface of the material (a) using, for example, the above-mentioned CVD, sputtering, ion vapor deposition, arc ion plating, or other method, to produce a member in which at least a portion of the surface of the material (a) is laminated with a carbon material. In the above manufacturing method, a DLC film or the like can be formed using the above-mentioned CVD, sputtering, ion vapor deposition, arc ion plating, or other method. The present disclosure also relates to a manufacturing method for manufacturing the member under conditions at or below the temperature at which the material (a) loses 1% by mass due to thermal decomposition. The manufacturing method of the present disclosure preferably includes a step of laminating the carbon material on the surface of the material (a) using CVD, sputtering, ion vapor deposition, or arc ion plating.

[0117] The semiconductor manufacturing related device of the present disclosure is preferably a semiconductor manufacturing related device equipped with the above-described member. By using the member of the present disclosure, excellent chemical resistance can be imparted to the device.

[0118] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0119] The semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment; The semiconductor manufacturing related equipment is preferably at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

[0120] The photolithography process device is at least one selected from the group consisting of a coating device, a resist stripping device, a developing device (developer), and a descum device; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; The above inspection and evaluation equipment and manufacturing equipment are defect repair equipment, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, and an ashing device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, The cleaning / drying device is at least one selected from the group consisting of a wet cleaning device, a scrub cleaning device, and a drying device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus, the processing device is a bump plating device, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; The inspection device is a life test device, The pure water / chemical device is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; The clean room device is at least one selected from the group consisting of a thermal chamber and an environmental testing device, The manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning / drying equipment, flow rate control equipment, packaging equipment, and liquid / gas measuring equipment.

[0121] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims. [Example]

[0122] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0123] Various physical properties were measured by the following methods.

[0124] <Chemical resistance evaluation 1-1> Chemical Resistance Evaluation 1-1: Chemical resistance to acidic chemicals was evaluated under the test conditions shown in Table 1 or 2 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% and nitric acid concentration 60%) and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0125] <Chemical resistance evaluation 1-2> In the chemical resistance evaluation 1-2, chemical resistance to acidic chemicals was evaluated under the test conditions shown in Table 1 or 2 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% and nitric acid concentration 60%) and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0126] <Chemical resistance evaluation 1-3> Chemical resistance evaluations 1 to 3 were carried out by evaluating the chemical resistance to acidic chemicals under the test conditions shown in Table 1 or 2 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in SPM (a volumetric blend of concentrated sulfuric acid and hydrogen peroxide solution of 1:0.25 to 1) and kept at 80°C for one day (24 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0127] <Chemical resistance evaluation 2> In the chemical resistance evaluation 2, chemical resistance to basic chemicals was evaluated under the test conditions shown in Table 1 or 2 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] - ) (25% concentration), and completely immersed in 80°C and kept for one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0128] The material (a) (substrate) and carbon material used in the examples and comparative examples are shown below. (Material (a)) PPS: Polyphenylene sulfide, MFR 125g / 10min, shape: 10mm x 50mm x 6mm, 1% thermal decomposition temperature 473℃ PEEK: Polyether ether ketone, MFR 10g / 10min, shape: 10mm x 50mm x 2mm, 1% thermal decomposition temperature 553℃ (carbon materials) Carbon material 1: Genius Coat F (DLC film) manufactured by Nippon ITF Corporation Carbon material 2: PH coating (DLC) manufactured by Kohan Kogyosha

[0129] Examples 1, 3, 5, and 7 According to the conditions in Table 1, carbon material 1 (Genius Coat F) was coated onto PPS using plasma CVD (60°C to 80°C) to obtain a test piece (laminated member).

[0130] Examples 2, 4, 6, and 8 Carbon material 2 (PH coating (DLC)) was coated onto PPS using plasma sputtering under the conditions in Table 1 to obtain a test piece (laminate member). The process inside the apparatus was vacuum → heating → cleaning → Ar sputtering → DLC coating → cooling → vacuum release, and the DLC coating was performed at 150°C.

[0131] Examples 9, 11, 13, 15, and 17 According to the conditions in Table 2, carbon material 1 (Genius Coat F) was coated onto PEEK using plasma CVD (60°C to 80°C) to obtain a test piece (laminated member).

[0132] Examples 10, 12, 14, 16, and 18 Carbon material 2 (PH coating (DLC)) was coated onto PEEK using plasma sputtering under the conditions in Table 2 to obtain a test piece (laminate member). The process inside the apparatus was vacuum → heating → cleaning → Ar sputtering → DLC coating → cooling → vacuum release, and the DLC coating was performed at 150°C.

[0133] Comparative Examples 1 to 4 The test specimen was PPS.

[0134] Comparative Examples 5 to 9 The test specimen was made of PEEK.

[0135] [Table 1]

[0136] [Table 2]

[0137] The laminated members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A component in which at least a portion of the surface of material (a) is laminated with carbon material, The aforementioned member is at least one member selected from the group consisting of building materials, aerospace materials, process materials used in semiconductor manufacturing, and semiconductor manufacturing-related equipment members. The semiconductor manufacturing-related equipment is at least one selected from the group consisting of semiconductor manufacturing equipment and semiconductor manufacturing equipment-related equipment. The semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus. The semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of pure water / chemical solution equipment, gas equipment, cleanroom equipment, and manufacturing-related equipment. The photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is a wet etching apparatus, The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom apparatus is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The manufacturing-related equipment is a component in which at least one is selected from the group consisting of a jig cleaning and drying device, a flow control device, a packaging device, and a measuring device for liquids and gases.

2. The member according to claim 1, wherein the carbon material is at least one selected from the group consisting of DLC (diamond-like carbon) and diamond.

3. The member according to claim 1, wherein the carbon material is DLC (diamond-like carbon).

4. The member according to any one of claims 1 to 3, wherein the material (a) is a metal.

5. The member according to any one of claims 1 to 3, wherein the coating containing the carbon material has a film thickness of 0.01 to 100 μm.

6. The member according to any one of claims 1 to 3, wherein the coating containing the carbon material has a film thickness of 0.1 to 10 μm.

7. The member according to any one of claims 1 to 3, wherein the member is at least one selected from the group consisting of pipes, nozzles, tubes, tanks, containers, fittings, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

8. The component according to any one of claims 1 to 3, wherein the semiconductor manufacturing-related apparatus is an apparatus in which chemicals are used.

9. The chemical is TMAH ([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ O mixture), phosphoric acid, and hydrochloric acid, and the member according to claim 8 is at least one selected from the group consisting of

10. The member according to claim 8, wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen / halogenated gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

11. The member according to claim 8, wherein at least a portion of the surface that comes into contact with the chemical is laminated with the carbon material.

12. The component according to any one of claims 1 to 3, wherein the mass change rate in the following chemical resistance evaluation is 50.0% by mass or less. (Chemical resistance evaluation) A test specimen of the aforementioned member (a test specimen in which a film containing carbon material is laminated over the entire surface of material (a), size of material (a): 10 mm x 50 mm x 6 mm, film thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion is measured under room temperature (20°C). After measurement, the test specimen is completely immersed in a mixed acid solution with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (50% hydrofluoric acid concentration, 60% nitric acid concentration) and kept at room temperature (20°C) for one week (168 hours). After holding, the test specimen is washed with pure water, any water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours. The mass of the immersed test specimen is then measured under room temperature (20°C) conditions. The percentage change in mass is calculated from the measured mass before and after immersion.

13. The component according to any one of claims 1 to 3, wherein the mass change rate in the following chemical resistance evaluation is 50.0% by mass or less. (Chemical resistance evaluation) A test specimen of the aforementioned member (a test specimen in which a film containing carbon material is laminated over the entire surface of material (a), size of material (a): 10 mm x 50 mm x 2 mm, film thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion is measured under room temperature (20°C). After measurement, the test specimen is completely immersed in a mixed acid solution with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (50% hydrofluoric acid concentration, 60% nitric acid concentration) and kept at room temperature (20°C) for one week (168 hours). After holding, the test specimen is washed with pure water, any water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours. The mass of the immersed test specimen is then measured under room temperature (20°C) conditions. The percentage change in mass is calculated from the measured mass before and after immersion.

14. A method for manufacturing a member according to any one of claims 1 to 3, comprising the step of laminating the carbon material onto the surface of material (a) using CVD, sputtering, ion deposition, or arc ion plating.

15. A semiconductor manufacturing apparatus equipped with the component described in any one of claims 1 to 3.

16. The semiconductor manufacturing-related apparatus according to claim 15, which is at least one selected from the group consisting of semiconductor manufacturing equipment and related equipment for semiconductor manufacturing equipment.

17. The semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus. The semiconductor manufacturing apparatus according to claim 16, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of a pure water / chemical solution apparatus, a gas apparatus, a cleanroom apparatus, and a manufacturing apparatus.

18. The photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is a wet etching apparatus, The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom apparatus is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The semiconductor manufacturing apparatus according to claim 17, wherein the manufacturing apparatus is at least one selected from the group consisting of a jig cleaning and drying apparatus, a flow rate control apparatus, a packaging apparatus, and liquid and gas measuring instruments.