Semiconductor Devices

Abstract

A semiconductor device is provided in which breakage of lead portions due to vibration is unlikely to occur. [Solution] The semiconductor device includes a semiconductor module (1) having a plurality of lead portions (10), a circuit board (2) connected to the plurality of lead portions (10) of the semiconductor module (1), and a heat sink (3) attached to the semiconductor module (1) on the side opposite the circuit board (2). The plurality of lead portions (10) include first lead portions (11) that are lead portions (10) located at both ends and second lead portions (12) that are lead portions (10) located at other ends. The first lead portion (11) is thicker than the second lead portion (12) from a base portion (10a) that protrudes from the semiconductor module (1) to a connection portion (10b) that connects to the circuit board (2).

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] For example, a semiconductor device having a structure in which a semiconductor module equipped with a heat sink is mounted on a circuit board such as a printed circuit board is known as a semiconductor device used for driving an electric motor (for example, Patent Document 1 below). In the semiconductor device of Patent Document 1, protrusions are provided on both end leads of a plurality of leads of the semiconductor module connected to the circuit board to keep the distance between the semiconductor module and the circuit board constant. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-245620 Summary of the Invention [Problem to be solved by the invention]

[0004] Semiconductor devices with the above-described structure have the problem that vibrations during transportation and vibrations from the driving motor are transmitted to the heat sink of the semiconductor module, and the vibrations of the heat sink cause stress in the lead portions of the semiconductor module, making the lead portions more susceptible to breakage.

[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor device in which breakage of the lead portions due to vibrations is unlikely to occur. [Means for solving the problem]

[0006] The semiconductor device according to the present disclosure comprises a semiconductor module having a plurality of lead portions, a circuit board connected to the plurality of lead portions of the semiconductor module, and a heat sink attached to the semiconductor module on the side opposite the circuit board, wherein the plurality of lead portions include first lead portions which are the lead portions located at both ends and second lead portions which are the lead portions located at other than the ends, and the first lead portions are thicker than the second lead portions from the base portion which protrudes from the semiconductor module to the connection portion which connects to the circuit board. [Effects of the Invention]

[0007] According to the semiconductor device according to the present disclosure, breakage of the lead portion due to vibration can be prevented. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a front view showing the configuration of a semiconductor device according to a first embodiment. [Figure 2] 1 is a side view showing the configuration of a semiconductor device according to a first embodiment. [Figure 3] FIG. 10 is a front view showing a modified example of the semiconductor device according to the first embodiment. [Figure 4] FIG. 10 is a front view showing a modified example of the semiconductor device according to the first embodiment. [Figure 5] FIG. 10 is a front view showing a modified example of the semiconductor device according to the first embodiment. [Figure 6] FIG. 10 is a side view showing the configuration of a semiconductor device according to a second embodiment. [Figure 7] FIG. 10 is a side view showing the configuration of a semiconductor device according to a second embodiment. [Figure 8] FIG. 10 is a front view showing the configuration of a semiconductor device according to a third embodiment. [Figure 9] FIG. 10 is a front view showing the configuration of a semiconductor device according to a fourth embodiment. [Figure 10] FIG. 10 is a side view showing the configuration of a semiconductor device according to a fourth embodiment. [Figure 11]FIG. 10 is a side view showing a modified example of the semiconductor device according to the fourth embodiment. [Figure 12] FIG. 10 is a front view showing the configuration of a semiconductor device according to a fifth embodiment. [Figure 13] FIG. 13 is a front view showing a modified example of the semiconductor device according to the fifth embodiment. [Figure 14] FIG. 13 is a front view showing a modified example of the semiconductor device according to the fifth embodiment. [Figure 15] FIG. 13 is a front view showing the configuration of a semiconductor device according to a sixth embodiment. [Figure 16] FIG. 13 is a front view showing the configuration of a semiconductor device according to a seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] <First Embodiment> 1 and 2 are diagrams showing the configuration of a semiconductor device according to embodiment 1. Fig. 1 and Fig. 2 show the configuration of the same semiconductor device when viewed from directions that are 90 degrees apart. For ease of explanation, the diagram corresponding to Fig. 1 will be referred to as a "front view," and the diagram corresponding to Fig. 2 will be referred to as a "side view."

[0010] As shown in FIGS. 1 and 2, the semiconductor device according to the first embodiment includes a semiconductor module 1, a circuit board 2, and a heat sink 3.

[0011] The semiconductor module 1 has a plurality of lead portions 10. The circuit board 2 is connected to the plurality of lead portions 10 of the semiconductor module 1. The heat sink 3 is attached to the surface of the semiconductor module 1 opposite to the circuit board 2 side. The semiconductor module 1 is, for example, a semiconductor module for power control (a so-called power module). The circuit board 2 is, for example, a printed circuit board (PCB).

[0012] Here, of the multiple lead portions 10 of the semiconductor module 1, the lead portions 10 arranged at both ends are defined as "first lead portions 11," and the lead portions 10 arranged at other ends are defined as "second lead portions 12." In the following description, "lead portions 10" refers to both the first lead portion 11 and the second lead portion 12.

[0013] Furthermore, in each of the multiple lead portions 10 (first lead portion 11 and second lead portion 12), the portion protruding from the semiconductor module 1 is defined as the "root portion 10a," the portion connecting to the circuit board 2 is defined as the "connection portion 10b," and the bent portion between the root portion 10a and the connection portion 10b is defined as the "bent portion 10c."

[0014] In the semiconductor device according to the first embodiment, the first lead portion 11 is thicker than the second lead portion 12. In this embodiment, the thickness of the first lead portion 11 and the thickness of the second lead portion 12 are the same, so the width of the first lead portion 11 is made wider than the width of the second lead portion 12, thereby making the first lead portion 11 thicker than the second lead portion 12.

[0015] The thicker the first lead portion 11, the higher its resistance to stress and the less likely it is to break. Furthermore, because the first lead portions 11 arranged at both ends are thick, vibrations of the heat sink 3 caused by vibrations during transportation or vibrations of the driving motor can be suppressed from being transmitted to the second lead portion 12, and breakage of the second lead portion 12 due to stress caused by vibrations can also be prevented. Therefore, the semiconductor device according to this embodiment has the effect of making breakage of the lead portion 10 less likely to occur due to vibrations.

[0016] The first lead portion 11 may be a lead portion that is actually used to control the semiconductor module 1, or may be a dummy lead portion that is provided solely for the purpose of holding the circuit board 2.

[0017] The first lead portion 11 only needs to be thicker than the second lead portion 12 at least from the base portion 10a to the connection portion 10b. For example, as shown in the front view of FIG. 3, the first lead portion 11 may have the same thickness (width) as the second lead portion 12 in the portion beyond the connection portion 10b. In other words, the first lead portion 11 may have a wide portion from the base portion 10a to the connection portion 10b and a narrow portion beyond the connection portion 10b. Hereinafter, the wide portion of the lead portion 10 (first lead portion 11 and second lead portion 12) will be referred to as the "wide portion," and the narrow portion will be referred to as the "narrow portion."

[0018] In FIG. 3, not only the first lead portion 11 but also the second lead portion 12 has a wide portion and a narrow portion. The wide portion has a higher stress resistance than the narrow portion. On the other hand, stress tends to concentrate at the bent portion 10c. Therefore, it is preferable that the bent portion 10c of each lead portion 10 is located in the wide portion.

[0019] 3, the step formed at the boundary between the wide and narrow portions of first lead portion 11 can be used as a protrusion that keeps the distance between semiconductor module 1 and circuit board 2 constant. In other words, by adjusting the position of the boundary between the wide and narrow portions of first lead portion 11, the distance between semiconductor module 1 and circuit board 2 can be adjusted.

[0020] However, stress is likely to occur at the step at the boundary between the wide and narrow portions of the lead portion 10. To alleviate this concentration of stress, a slope where the width of the lead portion 10 gradually changes may be provided at the boundary between the wide and narrow portions, as shown in Figure 4.

[0021] 5, a stepped portion whose width changes stepwise may be provided at the boundary between the wide and narrow portions of first lead portion 11. In this case, the distance between semiconductor module 1 and circuit board 2 can be adjusted by changing the position and size of the through-hole in circuit board 2 into which first lead portion 11 is inserted.

[0022] <Embodiment 2> 6 and 7 are side views showing the configuration of a semiconductor device according to embodiment 2. The front view of the semiconductor device according to embodiment 2 is the same as FIG. 1. The configuration of the semiconductor device according to embodiment 2 is different from the configuration of embodiment 1 in that the shape of the bent portion 10c of the lead portion 10 is changed.

[0023] As described above, stress tends to concentrate at the bent portion 10c of the lead portion 10. Therefore, in the second embodiment, the bent portion 10c of the lead portion 10 is bent in a stepwise manner as shown in Fig. 6. Alternatively, the bent portion 10c of the lead portion 10 may be bent in an arc shape as shown in Fig. 7.

[0024] By forming the bent portions 10c in an arc shape or a stepped bent shape in this way, stress concentration at the bent portions 10c is alleviated, improving the effect of preventing breakage of the lead portions 10. In this embodiment as well, it is preferable that the bent portions 10c of each lead portion 10 are located in the wide portion.

[0025] <Third Embodiment> 8 is a front view showing the configuration of a semiconductor device according to embodiment 3. The configuration of the semiconductor device according to embodiment 3 is different from the configuration of embodiment 1 in that a resin material 4 that covers a plurality of leads 10 is added.

[0026] The resin material 4 does not have to cover the entire plurality of lead portions 10, but only needs to cover at least a portion of them. In other words, there may be lead portions 10 that are not covered with the resin material 4, or a portion of the lead portions 10 (for example, the tip portions) may be exposed from the resin material 4. Furthermore, the resin material 4 may cover the entire semiconductor module 1 and the circuit board 2.

[0027] In the semiconductor device according to the third embodiment, vibration of the lead portions 10 is suppressed by the resin material 4, and therefore breakage of the lead portions 10 is prevented more effectively.

[0028] <Fourth Embodiment> 9 and 10 are a front view and a side view showing the configuration of a semiconductor device according to embodiment 4. The configuration of the semiconductor device according to embodiment 4 is different from the configuration of embodiment 1 in that there is no gap between semiconductor module 1 and circuit board 2.

[0029] In the first to third embodiments, a gap is provided between the semiconductor module 1 and the circuit board 2, but in the fourth embodiment, no gap is provided between the semiconductor module 1 and the circuit board 2. That is, in the fourth embodiment, the circuit board 2 is joined to a plurality of leads 10 in contact with the upper surface of the semiconductor module 1 (i.e., the surface facing the circuit board 2).

[0030] According to the semiconductor device of the fourth embodiment, the contact between the semiconductor module 1 and the circuit board 2 suppresses vibration of the lead portions 10, thereby improving the effect of preventing breakage of the lead portions 10.

[0031] 9 and 10 show an example in which the top surface of the semiconductor module 1 is flat and the entire top surface of the semiconductor module 1 is in contact with the circuit board 2. However, as shown in the side view of FIG. 11, for example, the top surface of the semiconductor module 1 may be uneven and only part of the top surface of the semiconductor module 1 may be in contact with the circuit board 2.

[0032] In addition, Figures 9 and 10 show an example in which the molding resin that forms the outer shape of the semiconductor module 1 is thickened to eliminate the gap between the semiconductor module 1 and the circuit board 2, but if the circuit board 2 can be brought into contact with the top surface of the semiconductor module 1, there is no need to thicken the molding resin.

[0033] <Fifth Embodiment> 12 is a front view showing the configuration of a semiconductor device according to embodiment 5. The configuration of the semiconductor device according to embodiment 5 is different from the configuration of embodiment 1 in that semiconductor module 1 is provided with a third lead portion 13 separate from lead portion 10.

[0034] The third lead portion 13 protrudes from a side surface of the semiconductor module 1 (i.e., a surface different from the surface from which the lead portion 10 protrudes) and is connected to the circuit board 2. The third lead portion 13 may be a lead portion actually used to control the semiconductor module 1, or may be a dummy lead portion provided solely for the purpose of holding the circuit board 2.

[0035] In the semiconductor device according to the fifth embodiment, the third lead portion 13 suppresses lateral vibration of the lead portion 10, thereby improving the effect of preventing breakage of the lead portion 10.

[0036] The second embodiment may be applied to the third lead portion 13. That is, the bent portion 13c of the third lead portion 13 may be bent in a stepwise manner as shown in Fig. 13, or may be bent in an arc shape as shown in Fig. 14. This can also prevent breakage of the third lead portion 13.

[0037] <Sixth Embodiment> 15 is a front view showing the configuration of a semiconductor device according to embodiment 6. The configuration of the semiconductor device according to embodiment 6 is different from the configuration of embodiment 1 in that the position of base portion 10a of first lead portion 11 is closer to circuit board 2 (farther from heat sink 3) than base portion 10a of second lead portion 12.

[0038] In the sixth embodiment, the distance from the base 10a to the connection portion 10b of the first lead portion 11 is shorter than the distance from the base 10a to the connection portion 10b of the second lead portion 12. This improves the effect of the first lead portion 11 in making it difficult for vibrations of the heat sink 3 to be transmitted to the second lead portion 12, and improves the effect of preventing breakage of the lead portion 10 due to vibrations.

[0039] <Seventh Embodiment> 16 is a front view showing the configuration of a semiconductor device according to embodiment 7. The configuration of the semiconductor device according to embodiment 7 is different from the configuration of embodiment 1 in that the spacing between the leads 10 is changed.

[0040] In the seventh embodiment, the spacing between the leads 10 is narrower on the outside than in the center. In other words, the spacing between the leads 10 arranged on the outside among the multiple leads 10 is narrower than the spacing between the leads 10 arranged in the center.

[0041] The more outer the lead portions 10 are, the more stress caused by vibrations tends to be applied to them. By narrowing the spacing between the outer lead portions 10, it is expected that the stress applied to the outer lead portions 10 will be alleviated.

[0042] It is possible to freely combine the embodiments, and to modify or omit the embodiments as appropriate.

[0043] <Additional Notes> Various aspects of the present disclosure are summarized below as appendices.

[0044] (Appendix 1) a semiconductor module having a plurality of leads; a circuit board connected to the plurality of leads of the semiconductor module; a heat sink attached to the semiconductor module on the side opposite to the circuit board; Equipped with The plurality of lead portions are First lead portions, which are the lead portions arranged on both ends; second lead portions that are the lead portions arranged other than the both ends; Including, the first lead portion is thicker than the second lead portion between a base portion that protrudes from the semiconductor module and a connection portion that connects to the circuit board; Semiconductor device.

[0045] (Appendix 2) The first lead portion has a wide portion from the base portion to the connection portion and a narrow portion beyond the connection portion. 2. The semiconductor device according to claim 1.

[0046] (Appendix 3) The first lead portion has a sloped portion at the boundary between the wide portion and the narrow portion, where the width of the lead portion gradually changes. 3. The semiconductor device according to claim 2.

[0047] (Appendix 4) The first lead portion has a stepped portion at the boundary between the wide portion and the narrow portion, the width of which changes stepwise. 3. The semiconductor device according to claim 2.

[0048] (Appendix 5) The distance from the base of the first lead portion to the connecting portion is shorter than the distance from the base of the second lead portion to the connecting portion. 5. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0049] (Appendix 6) Each of the plurality of lead portions has a wide portion including the base portion and a narrow portion including the connection portion, and has an inclined portion at the boundary between the wide portion and the narrow portion, where the width of the lead portion gradually changes. 6. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0050] (Appendix 7) Each of the plurality of lead portions has a bent portion that is bent in an arc shape or in a stepwise manner. 7. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0051] (Appendix 8) Each of the plurality of lead portions has a wide portion including the base portion and a narrow portion including the connection portion, and has a bent portion in the wide portion. 7. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0052] (Appendix 9) Each of the plurality of lead portions is bent in an arc shape or in a stepwise manner at the bent portion. 9. The semiconductor device according to claim 8.

[0053] (Appendix 10) Further, a resin material is provided to cover at least a part of the plurality of lead portions. 10. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0054] (Appendix 11) the circuit board is joined to the plurality of leads in a state of contact with a surface of the semiconductor module facing the circuit board; 11. The semiconductor device according to claim 1.

[0055] (Appendix 12) the semiconductor module further includes a third lead portion protruding from a surface different from a surface from which the plurality of lead portions protrude, the third lead portion is connected to the circuit board; 12. The semiconductor device according to claim 1.

[0056] (Appendix 13) the third lead portion has a bent portion that is bent in an arc shape or in a stepwise manner; 13. The semiconductor device according to claim 12.

[0057] (Appendix 14) The spacing between the plurality of lead portions is narrower at the outer sides than at the center. 14. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer. [Explanation of symbols]

[0058] 1 semiconductor module, 2 circuit board, 3 heat sink, 4 resin material, 10 lead portion, 11 first lead portion, 12 second lead portion, 13 third lead portion, 10a base portion, 10b connection portion, 10c, 13c bent portion.

Claims

1. a semiconductor module having a plurality of leads; a circuit board connected to the plurality of leads of the semiconductor module; a heat sink attached to the semiconductor module on the side opposite to the circuit board; Equipped with The plurality of lead portions are First lead portions, which are the lead portions arranged on both ends; second lead portions that are the lead portions arranged other than the both ends; Including, the first lead portion is thicker than the second lead portion between a base portion that protrudes from the semiconductor module and a connection portion that connects to the circuit board; Semiconductor device.

2. the first lead portion has a wide portion extending from the base portion to the connection portion and a narrow portion extending beyond the connection portion; The semiconductor device according to claim 1 .

3. The first lead portion has an inclined portion at the boundary between the wide portion and the narrow portion, where the width of the lead portion gradually changes. The semiconductor device according to claim 2 .

4. the first lead portion has a stepped portion at the boundary between the wide portion and the narrow portion, the width of which changes stepwise; The semiconductor device according to claim 2 .

5. a distance from the base of the first lead portion to the connection portion is shorter than a distance from the base of the second lead portion to the connection portion; The semiconductor device according to claim 1 .

6. Each of the plurality of lead portions has a wide portion including the base portion and a narrow portion including the connection portion, and has an inclined portion at the boundary between the wide portion and the narrow portion, where the width of the lead portion gradually changes. The semiconductor device according to claim 1 .

7. Each of the plurality of lead portions has a bent portion that is bent in an arc shape or in a stepwise manner. The semiconductor device according to claim 1 .

8. Each of the plurality of lead portions has a wide portion including the base portion and a narrow portion including the connection portion, and has a bent portion in the wide portion. The semiconductor device according to claim 1 .

9. Each of the plurality of lead portions is bent in an arc shape or in a stepwise manner at the bent portion. The semiconductor device according to claim 8 .

10. Further, a resin material is provided to cover at least a part of the plurality of lead portions. The semiconductor device according to claim 1 .

11. the circuit board is joined to the plurality of leads in a state of contact with a surface of the semiconductor module facing the circuit board; The semiconductor device according to claim 1 .

12. the semiconductor module further includes a third lead portion protruding from a surface different from a surface from which the plurality of lead portions protrude, The third lead portion is connected to the circuit board. The semiconductor device according to claim 1 .

13. the third lead portion has a bent portion that is bent in an arc shape or in a stepwise manner; The semiconductor device according to claim 12.

14. The spacing between the plurality of lead portions is narrower at the outside than at the center. The semiconductor device according to claim 1 .

Images