Display panel

Abstract

To provide a novel display panel that is highly convenient and reliable. To provide a novel information processing device with excellent reliability. and a method for manufacturing a display panel. a first insulating film; and a first connecting portion disposed in a first opening of the first insulating film. a pixel circuit electrically connected to the first connection portion; and a second a connecting portion, a first display element electrically connected to the first connecting portion, and a second display element electrically connected to the second connecting portion; a pixel including a second display element connected to the pixel circuit; and a terminal electrically connected to the pixel circuit. The first insulating film includes a region sandwiched between the first display element and the second display element. The inventors have come up with a configuration in which the terminal has a surface that can function as a contact point.

Description

[Technical Field]

[0001] One embodiment of the present invention is a display panel, a data processing device, a method for manufacturing a display panel, or a semiconductor device. Regarding.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Examples include their driving methods and their manufacturing methods. [Background technology]

[0003] The light-collecting means and the pixel electrodes are provided on the same side of the substrate, and the visible light of the pixel electrodes is transmitted along the optical axis of the light-collecting means. and a liquid crystal display device having a light-collecting direction X and a non-light-collecting direction Y. The non-light-collecting direction Y and the long axis direction of the visible light transmitting region of the pixel electrode are A liquid crystal display device having a configuration in which the directions are aligned is known (Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-191750 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide a novel display panel that is highly convenient or reliable. Alternatively, the present invention aims to provide a novel information processing device that is highly convenient and reliable. Another object of the present invention is to provide a method for manufacturing a novel display panel that is highly convenient and reliable. Alternatively, a novel display panel, a novel information processing device, a novel An object of the present invention is to provide a method for manufacturing a display panel or a novel semiconductor device.

[0006] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0007] (1) One embodiment of the present invention is a display panel including a pixel and a terminal.

[0008] The pixel includes a first insulating film and a first connector disposed in a first opening of the first insulating film. a pixel circuit electrically connected to the first connection portion; and a second connection portion electrically connected to the pixel circuit. a second connection portion, a first display element electrically connected to the first connection portion, and a second display element electrically connected to the second connection portion. and a second display element electrically connected to the first display element.

[0009] The first insulating film has a region sandwiched between the first display element and the second display element. The first display element includes a reflective film having a function of reflecting incident light and a second opening; and a function for controlling the intensity of reflected light.

[0010] The second display element has a region overlapping with the second opening, and the region overlapping with the second opening has a function of emitting light toward the second opening.

[0011] The terminal is electrically connected to the pixel circuit, and the terminal can function as a contact point. It has a surface.

[0012] (2) Another aspect of the present invention is the display panel, wherein the pixel circuit includes a switching element. is.

[0013] The display panel according to one embodiment of the present invention includes a first insulating film and a first opening of the first insulating film. a pixel circuit electrically connected to the first connection portion; a second connection portion electrically connected to the first connection portion; and a first display element electrically connected to the first connection portion. a pixel including a second display element electrically connected to the second connection portion; The first insulating film is formed of a first display element and a terminal electrically connected to the first insulating film. and a region sandwiched between the first display element and the second display element, and the terminal can function as a contact point. It has a cuttable surface.

[0014] As a result, for example, a pixel circuit connected to the terminal is arranged so as to sandwich the first insulating film. The first display element and the second display element can be driven in a manner that is convenient. Alternatively, a novel display panel with excellent reliability can be provided.

[0015] (3) In one embodiment of the present invention, a pixel circuit includes a transistor, and the transistor is an The current flowing in the off state is suppressed by a transistor that uses amorphous silicon as a semiconductor. The display panel has a function of controlling the brightness of the display panel.

[0016] The display panel according to one embodiment of the present invention can suppress a current flowing in a pixel circuit in an off state. This allows the display to be displayed while suppressing flicker. This reduces the frequency with which selection signals are supplied to the pixel circuits, resulting in lower power consumption. It is possible to provide a novel display panel with reduced noise and excellent convenience and reliability.

[0017] (4) In one embodiment of the present invention, the first display element includes a layer containing a liquid crystal material and a layer of the liquid crystal material. The first conductive film and the second conductive film are disposed so that the direction of the conductive film can be controlled. The first conductive film is electrically connected to the first connection portion, which is the display panel.

[0018] (5) In one embodiment of the present invention, the second display element includes a third conductive film and a second conductive film overlapping the third conductive film. a fourth conductive film having a region including a light-emitting organic layer and a light-emitting layer disposed between the third conductive film and the fourth conductive film; and a layer containing a compound. The third conductive film is electrically connected to the second connection portion. The third conductive film is a light-transmitting film in the display panel.

[0019] The display panel according to one embodiment of the present invention uses a reflective liquid crystal element as the first display element and an organic E The L element is used as the second display element.

[0020] This allows, for example, to use external light and reflective liquid crystal elements in bright environments, and In dimly lit environments, the light emitted by the organic EL element can be used to display images. Under this condition, the display can be achieved by utilizing external light and the light emitted by the organic EL element. As a result, a novel display panel capable of displaying images with excellent visibility can be provided. It is possible to provide a novel display panel that can reduce power consumption. It is possible to provide a novel display panel that is excellent in convenience and reliability.

[0021] (6) In one embodiment of the present invention, the first display element has a function of reflecting external light, and a reflective film The ratio of the total area of ​​secondary openings to the total area of ​​non-secondary openings is 0.052 or greater. 6 or less, and the area of ​​one second opening is 3 μm 2 More than 25μm 2 Below is the table above This is a display panel.

[0022] The display panel according to one embodiment of the present invention includes a second element having a function of reflecting external light and a 3 μm 2 More than 25μm 2 The total surface area of ​​the reflective film that does not have one or more of the following openings The ratio of the total area of ​​the openings to the product is 0.052 or more and 0.6 or less.

[0023] This can prevent, for example, the alignment of the liquid crystal material from becoming disordered. In addition, in a dark environment, the organic EL element emits light. As a result, a display with excellent visibility can be produced. It is possible to provide a novel display panel that can reduce power consumption. It is possible to provide a display panel. Alternatively, it is possible to provide a novel display panel that is highly convenient and reliable. A panel can be provided.

[0024] (7) In one aspect of the present invention, the reflective film is formed in a region embedded in the first insulating film and in a region embedded in the first insulating film. The display panel has an area exposed from the insulating film.

[0025] The display panel according to one embodiment of the present invention has a region buried in the first insulating film and an exposed region. This reduces the step that occurs at the edge of the reflective film, It is possible to prevent alignment defects due to the step. As a result, a novel display panel with excellent convenience and reliability can be obtained. can be provided.

[0026] (8) In addition, in one embodiment of the present invention, the surface capable of functioning as a contact is used for display purposes. The display panel is oriented in the same direction as the surface of the reflective film that reflects light. The insulating film has a region buried in the first insulating film and a region exposed from the second insulating film.

[0027] The display panel according to one embodiment of the present invention has a region buried in the first insulating film and an exposed region. This exposes the surface of the terminal that functions as a contact point. As a result, a novel display panel with excellent convenience and reliability can be provided. can be done.

[0028] (9) In another aspect of the present invention, the pixel is provided with a second insulating film. The first insulating film has a region where the reflective film is sandwiched between the first insulating film and the second insulating film, and the second insulating film is It has an area that covers the reflective film.

[0029] (10) Another embodiment of the present invention is a data processing device including an arithmetic device and an input / output device. be.

[0030] The computing device is provided with the function of receiving the position information and supplying the image information and the control information. can.

[0031] The input / output device also has a function of supplying position information, and is supplied with image information and control information. It also has a display unit that displays image information and an input unit that supplies position information. Prepare.

[0032] The display unit includes the display panel. The input unit detects the position of the pointer and The device has a function of supplying location information determined based on the above.

[0033] The computing device has a function of determining the moving speed of the pointer based on the position information, and It has the function of determining contrast or brightness based on the pointer movement speed.

[0034] The information processing device according to the aspect of the present invention is an input / output device that supplies position information and receives image information. and a computing device that receives the position information and provides the image information, The device determines the contrast or brightness of the image information based on the speed of the pointer movement. This reduces the strain on the user's eyes when moving the display position of image information. This allows for a display that is easy on the eyes of the user, resulting in increased convenience and reliability. It is possible to provide a novel information processing device with excellent performance.

[0035] (11) In one embodiment of the present invention, the input unit is a keyboard, a hardware button, a pointer, or the like. touch sensor, illuminance sensor, imaging device, voice input device, viewpoint input device , a posture detection device.

[0036] This reduces power consumption and ensures excellent visibility even in bright places. As a result, a novel information processing device that is highly convenient and reliable can be provided.

[0037] (12) Furthermore, one aspect of the present invention is a method for producing the above-mentioned display panel, which comprises the following 11 steps: This is the manufacturing method.

[0038] In the first step, a first insulating film is formed on a process substrate.

[0039] Then, in the second step, a reflective film and a terminal are formed.

[0040] Next, in the third step, a second insulating film is formed to cover the reflective film and the terminals.

[0041] Next, in the fourth step, a first connection portion and a terminal electrically connected to the reflective film are A third connection portion is formed that is electrically connected to the

[0042] Then, in the fifth step, a wiring electrically connected to the first connection portion and the third connection portion is formed. A pixel circuit is formed.

[0043] Then, in the sixth step, a second connection portion that connects to the pixel circuit is formed.

[0044] Next, in the seventh step, a second display element electrically connected to the second connection portion is Form.

[0045] Then, in the eighth step, the substrates are laminated.

[0046] Then, in the ninth step, the process substrate is separated.

[0047] Next, in the tenth step, the first insulating film is removed to expose the reflective film and the terminals. Can.

[0048] Then, in an eleventh step, a first display element is formed.

[0049] The manufacturing method of the display panel according to one embodiment of the present invention includes a step of separating a substrate for processing and a second step of forming a display panel. and removing the insulating film 1 to expose the reflective film and the terminals. This reduces the step that occurs at the edge of the reflective film, making it difficult for alignment defects and the like to occur due to the step. In addition, the surface that functions as the contact point of the terminal can be exposed. As a result, a novel method for producing a display panel that is highly convenient and reliable can be provided. .

[0050] In the drawings accompanying this specification, components are classified by function and are shown as independent blocks. However, it is difficult to completely separate the components by function in reality. It is possible that one component may be involved in multiple functions.

[0051] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the level of the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the The terminal to which the voltage is applied is called the drain. The terminal to which a high potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. However, in reality, the source and drain are connected according to the above potential relationship. The way they are handled changes.

[0052] In this specification, the source of a transistor is a part of a semiconductor film that functions as an active layer. The source region connected to the semiconductor film or the source electrode connected to the semiconductor film. The drain of the transistor is a drain region that is a part of the semiconductor film, or a region that is part of the semiconductor film. "Gate" means the gate electrode.

[0053] In this specification, the state in which transistors are connected in series means, for example, Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. The other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0054] In this specification, connection means an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to the state where the signal can be supplied or transmitted. does not necessarily refer to the state in which a current, voltage, or potential is available or transferable. The signals are transmitted through circuit elements such as wires, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0055] In this specification, when components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a Cases in which one conductive film has the functions of multiple components are also included in this category.

[0056] In this specification, either the first electrode or the second electrode of a transistor is a source the other refers to the drain electrode. [Effects of the Invention]

[0057] According to one embodiment of the present invention, a novel display panel that is highly convenient or reliable can be provided. Alternatively, a novel information processing device with excellent convenience and reliability can be provided. Alternatively, a method for manufacturing a novel display panel with excellent reliability can be provided. It is possible to provide a novel information processing device, a display panel manufacturing method, or a novel semiconductor device. .

[0058] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0059] [Figure 1] 1A and 1B are a top view and a circuit diagram illustrating a structure of a display panel according to an embodiment. [Figure 2] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 3] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 4] 1A and 1B are cross-sectional views illustrating a cross-sectional configuration of a terminal of a display panel according to an embodiment. [Figure 5] 1A and 1B are cross-sectional views illustrating a cross-sectional configuration of a terminal of a display panel according to an embodiment. [Figure 6] FIG. 2 is a top view illustrating a structure of a pixel according to an embodiment. [Figure 7] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 8] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 9] FIG. 2 is a circuit diagram illustrating a configuration of a display unit according to an embodiment. [Figure 10] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 11] 1A and 1B are cross-sectional views illustrating a cross-sectional structure of a display panel according to an embodiment. [Figure 12] 1 is a flowchart illustrating a manufacturing method of a display panel according to an embodiment. [Figure 13] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 14] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 15] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 16] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 17] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 18] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 19] 1A to 1C illustrate a method for manufacturing a display panel according to an embodiment. [Figure 20] 1A to 1C illustrate a structure of a transistor according to an embodiment. [Figure 21] 1A to 1C illustrate a structure of a transistor according to an embodiment. [Figure 22] 1A and 1B illustrate a configuration of an input / output device according to an embodiment. [Figure 23] 1A and 1B are a block diagram and a projection diagram illustrating a configuration of an information processing device according to an embodiment. [Figure 24] 1A and 1B are a block diagram and a circuit diagram illustrating a configuration of a display unit according to an embodiment. [Figure 25] 4 is a flowchart illustrating a program according to an embodiment. [Figure 26] 5A to 5C are schematic diagrams illustrating image information according to the embodiment. [Figure 27] 1A and 1B are a cross-sectional view and a circuit diagram illustrating a structure of a semiconductor device according to an embodiment. [Figure 28] FIG. 2 is a block diagram illustrating the configuration of a CPU according to the embodiment. [Figure 29] FIG. 1 is a circuit diagram illustrating a configuration of a memory element according to an embodiment. [Figure 30] 1A to 1C illustrate a structure of an electronic device according to an embodiment. [Figure 31] 5 is a photograph illustrating the display quality of the display panel according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0060] The display panel according to one embodiment of the present invention includes a second insulating film and a second insulating film disposed in an opening of the second insulating film. a pixel circuit electrically connected to the first connection portion; a second connection portion electrically connected to the first connection portion; a first display element electrically connected to the second connection portion; a pixel including a second display element electrically connected to the connection portion; and a pixel circuit electrically connected to the second display element. The second insulating film is configured to include a terminal connected to the first display element and the second display element. The terminal has a surface that can function as a contact point. can.

[0061] As a result, for example, a pixel circuit connected to the terminal is arranged so as to sandwich the second insulating film. The first display element and the second display element can be driven in a manner that is convenient. Alternatively, a novel display panel with excellent reliability can be provided.

[0062] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0063] (Embodiment 1) In this embodiment, a structure of a display panel according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. He explains while doing so.

[0064] FIG. 1 illustrates a structure of a display panel according to one embodiment of the present invention. 1( a ) and 1 ( b ) are top and bottom views of an embodiment of a display panel 700, 700B, or 700C; 1(A) is a top view of the pixel 702(i, j). In some cases, a variable whose value is an integer greater than or equal to 1 is used as a code. For example, The variable p is used as part of the code to identify any of the maximum p components. For example, it may include variables m and n that take integer values ​​of 1 or more (m, n) may be used as part of a code to identify any of up to m × n components.

[0065] FIG. 2 illustrates a structure of a display panel according to one embodiment of the present invention. 10 shows the display panel 70 along the cutting lines X1-X2, X3-X4, and X5-X6. 2(B) is a cross-sectional view of the transistor M shown in FIG. 2(A), and FIG. 2(C) is a cross-sectional view of the transistor M shown in FIG. 2C is a cross-sectional view of the transistor MD shown in FIG.

[0066] <Display panel configuration example 1.> The display panel 700 described in this embodiment includes a pixel 702(i, j), a substrate 770, and The display panel has the following structure (see FIG. 1(A)).

[0067] The substrate 770 has an area that overlaps with the pixel 702(i,j) (see FIG. 2).

[0068] The pixel 702(i, j) is a pixel including a first display element 750 and an area overlapping the first display element 750. and a second display element 550 including the first display element 750 and the second display element 550. A functional layer 520 is provided between them.

[0069] The functional layer 520 includes a first connection portion 704C that is electrically connected to the first display element 750, and a second connection portion 704B that is electrically connected to the first display element 750. a second connection portion 504C electrically connecting to the second display element 550, and a first connection portion 704C and a pixel circuit 730(i,j) electrically connected to the second connection portion 504C. (See Figure 1(C) and Figure 2(A)).

[0070] The first display element 750 has a reflective film that reflects incident light and a transparent film that reflects incident light. It should be noted that, for example, the first conductive film 751 may be used as a reflective film. (See Figure 2(A)).

[0071] The reflective film has an opening 751H, and the second display element 550 has an area overlapping the opening 751H. For example, when the first conductive film 751 is used as a reflective film, the first conductive film 75 1 has an opening 751H.

[0072] The area of ​​the second display element 550 that overlaps with the opening 751H is irradiated with light toward the opening 751H. The light emitted from the second display element 550 passes through the opening 751H. The light passes through the display panel 700 and is then taken out from the display surface of the display panel 700.

[0073] Furthermore, the pixel circuit 730(i,j) of the display panel 700 includes a switching element (e.g., The switch SW1 or switch SW2 is included (see FIG. 1(C)).

[0074] The display panel 700 includes a first display element 750 and an area overlapping the first display element 750. The second display element 550 is electrically connected to the first display element 750 through a first connection portion 760. 504C, a second connection portion 504C electrically connected to the second display element 550, and a first connection portion 504B. Pixel circuits 730(i,j) electrically connected to the connection portion 704C and the second connection portion 504C and

[0075] This allows, for example, pixel circuits that can be formed in the same process to be used in one functional layer. Therefore, the first display element and the second display element can be driven. It is possible to provide a novel display panel with excellent reliability.

[0076] Furthermore, the pixel circuit 730(i,j) of the display panel 700 can be used as a switch. The transistor includes a transistor that uses amorphous silicon as a semiconductor. It has a function to suppress the current flowing from the starter in the off state (Fig. 1(C) reference).

[0077] The display panel 700 suppresses the current flowing through the pixel circuit 730(i, j) in the off state. This allows for suppression of flickering while still maintaining the Therefore, the frequency with which a selection signal is supplied to the pixel circuit can be reduced. It is possible to provide a novel display panel with reduced noise and excellent convenience and reliability.

[0078] The first display element 750 of the display panel 700 includes a layer 753 containing a liquid crystal material and a layer 754 containing a liquid crystal material. a first conductive film 751 and a second conductive film 752 disposed so as to control the orientation of the material; The first conductive film 751 is electrically connected to the first connection portion 704C. .

[0079] The second display element 550 of the display panel 700 includes a third conductive film 551 and a third conductive film 552. a fourth conductive film 552 having an area overlapping with the third conductive film 551; A layer 553 containing a light-emitting organic compound is provided between the conductive films 552. The conductive film 551 is electrically connected to the second connection portion 504C, and the third conductive film 551 is a light-transmitting film. To have sexuality.

[0080] The display panel 700 uses a reflective liquid crystal element as the first display element 750 and an organic EL element as the second display element. It is configured to be used for the second display element 550.

[0081] This allows, for example, to use external light and reflective liquid crystal elements in bright environments, and The display can be made using the light emitted by the organic EL element. Alternatively, a novel display panel with excellent reliability can be provided.

[0082] Preferably, the second display element 550 has a function of reflecting external light. The fourth conductive film 552 can be made of a material that reflects visible light.

[0083] And, the ratio of the total area of ​​the openings including the opening 751H to the total area of ​​the non-openings of the reflective film is The value is 0.052 or more and 0.6 or less, and the area of ​​one opening 751H is 3 μm 2 More than 25μ m 2 When the first conductive film 751 is used as a reflective film, The ratio of the total area of ​​the openings, including the opening 751H, to the total area of ​​the non-openings is 0.052 and 0.6 or less (see Figure 1(B)).

[0084] In addition, if the area of ​​a pixel is 1, the area of ​​the reflective film relative to the area of ​​the pixel should be 0.5 to 0.9. 5 or less. In addition, the area of ​​the opening 751H in the pixel area can be set to 0.05 It can be between 2 and 0.3.

[0085] This allows the display to be made using external light in a bright environment. In a dim environment, the light emitted by the organic EL element can be used for display. In a bright environment, the display can be achieved by utilizing external light and the light emitted by the organic EL element. In addition, the size of the opening is small enough to prevent, for example, the alignment of the liquid crystal element from being disturbed and display is possible. As a result, a novel display panel with excellent convenience and reliability can be provided. It is possible.

[0086] The pixel 702(i, j) of the display panel 700 is formed by an insulating film 501A covering the first conductive film 751. and an insulating film 501B between the first conductive film 751 and the pixel circuit 730(i, j). .

[0087] The first conductive film 751 is disposed between the insulating film 501A and the insulating film 501B. The conductive film 751 is embedded in the insulating film 501B.

[0088] The display panel 700 includes a first conductive film 751 embedded in an insulating film 501B. This reduces the step that occurs at the end of the first conductive film, and prevents alignment defects due to the step. As a result, a novel display panel with excellent convenience and reliability can be provided. can be provided.

[0089] The display panel 700 may have one or more pixels. The pixel array has n pixels 702(i,j) in the direction perpendicular to the row direction and m pixels in the column direction intersecting the row direction. Here, i is an integer between 1 and m, j is an integer between 1 and n, and m and n is an integer of 1 or greater.

[0090] In addition, the pixels 702(i,1) to 702(i,n) arranged in the row direction are electrically connected to It is possible to have a scanning line G1(i) and a scanning line G2(i) connected to each other (see FIG. 1(C)). ).

[0091] In addition, the pixels 702(1,j) to 702(m,j) arranged in the column direction are electrically connected to The signal line S(j) may be connected to the signal line S(j).

[0092] Furthermore, the pixel 702(i, j) of the display panel 700 overlaps with the first display element 750. and a light-shielding film B having an opening in an area overlapping with the first display element 750. M, an insulating film 771 between the colored film CF1 or the light-shielding film BM and the layer 753 containing a liquid crystal material, (see FIG. 2A). As a result, the insulating film 771 has a thickness based on the thickness of the colored film CF1. Alternatively, the liquid crystal material can be removed from the light-shielding film BM or the colored film CF1. This can suppress the diffusion of impurities into the layer 753 containing the material.

[0093] The display panel 700 also includes an alignment film AF between the substrate 770 and the layer 753 containing the liquid crystal material. 2, and an alignment film AF1 is provided between the layer 753 containing a liquid crystal material and the insulating film 501A.

[0094] The display panel 700 is surrounded by the substrate 770, the insulating film 501A, and the sealing material 705. The region includes a layer 753 containing a liquid crystal material. The sealing material 705 is formed by sealing the substrate 770 and the insulating film 50. It has the function of bonding 1A.

[0095] The display panel 700 also includes a substrate 770 and an insulating film 501A between the substrate 770 and the insulating film 501A. The insulating film 501A includes a structure KB1 that controls the gap between the insulating film 501A.

[0096] The display panel 700 also includes an optical film 701 having an area overlapping with the pixel 702(i, j). The display panel 700 includes an optical film 770P and a layer 770P containing a liquid crystal material. 53, a substrate 770 is provided.

[0097] The display panel 700 also includes a functional layer 520. The functional layer 520 includes an insulating film 501A, an insulating film 501B, an insulating film 501C, an insulating film 501D, an insulating film 501E, an insulating film 501F, an insulating film 501G, an insulating film 501H ... The insulating film 501B, the insulating film 501C, the insulating film 521B, the insulating film 521A, and the insulating film 528 Has.

[0098] The insulating film 501B and the insulating film 501C are provided with an opening in which the first connecting portion 704C is disposed. Note that the following description will be given taking as an example a configuration in which the insulating film 501C is stacked on the insulating film 501B. It is also possible to use only the insulating film 501B without using the insulating film 501C.

[0099] The insulating film 521B has a region overlapping with the insulating film 501C.

[0100] The insulating film 521A is disposed between the insulating film 501C and the insulating film 521B.

[0101] The insulating film 521A also has an opening in which the second connecting portion 504C is disposed.

[0102] The insulating film 528 has an opening in which the second display element 550 is disposed.

[0103] The display panel 700 also has a colored film CF2 formed between an opening 751H in the reflective film and a second It is provided between the display elements 550.

[0104] The display panel 700 also includes a substrate 570 having an area overlapping with the functional layer 520, and a substrate 570 having an area overlapping with the functional layer 520. 20 and a bonding layer 505 that bonds the substrate 570 together.

[0105] The second display element 550 of the display panel 700 is disposed between the functional layer 520 and the substrate 570. are arranged in.

[0106] The display panel 700 also includes a structure KB2 between the functional layer 520 and the substrate 570. This allows a predetermined gap to be provided between the functional layer 520 and the substrate 570.

[0107] The display panel 700 also includes a driving circuit GD. The driving circuit GD includes, for example, a transistor. The driving circuit GD includes a selection signal MD (see FIG. 1(A) and FIG. 2(A)). It has the function of supplying to the scanning line G1(i) or the scanning line G2(i).

[0108] The display panel 700 also includes wiring 511 electrically connected to the pixel circuit 730(i, j). The display panel 700 also has a terminal for electrically connecting to the pixel circuit 730(i, j). 519. The display panel 700 also includes a wiring ANO, a wiring VCOM1, and a wiring V COM2 (see Figure 1(C) and Figure 2).

[0109] For example, the conductive material ACF1 is used to connect the flexible printed circuit board FPC1 and the terminal 5 19 can be electrically connected to the display panel 700 using a conductive material. The circuit SD can be electrically connected.

[0110] The display panel 700 may also have a terminal 719 (see FIG. 4A). For example, the terminal 719 is electrically connected to the second conductive film 752. The flexible printed circuit board FPC2 and the terminal 719 can be electrically connected using the The material that can be used for the terminal 519 can be used for the terminal 719, and the conductive material ACF The materials that can be used for the conductive material ACF1 can be used for the conductive material ACF2.

[0111] The display panel 700 also includes a conductive portion that electrically connects the second conductive film 752 and the terminal 519. For example, conductive particles can be used as conductive particles (see FIG. 4(B) or FIG. 5). It can be used for materials.

[0112] The driver circuit SD has a function of supplying an image signal based on image information.

[0113] The individual elements that make up the display panel 700 will be described below. are not clearly separable, and one component may also contain other components or parts of other components. be.

[0114] For example, when a conductive film that reflects visible light is used as the first conductive film 751, 1 can be used as a reflective film, and the first conductive film 751 is a reflective film, and the reflective film is It is also a conductive film 751.

[0115] <Configuration> The display panel 700 has a substrate 570 or a substrate 770, and the display panel 700 has wiring 511 Or it has a terminal 519.

[0116] The display panel 700 has a sealing material 705 or a bonding layer 505, and the display panel 700 has a structure KB1 or structure KB2.

[0117] The display panel 700 has a pixel 702(i,j), and the display panel 700 has a first display element 7 50 or a second display element 550.

[0118] The display panel 700 includes a first conductive film 751, a second conductive film 752, and a layer 753 containing a liquid crystal material. , has an opening 751H or a reflective film.

[0119] The display panel 700 includes a third conductive film 551, a fourth conductive film 552, and a light-emitting element containing an organic compound. The layer 553 includes a layer 553 .

[0120] The display panel 700 includes a functional layer 520. The display panel 700 includes pixel circuits 730(i,j ), has a first connection portion 704C or a second connection portion 504C.

[0121] The display panel 700 includes a switching element, a transistor M or a transistor MD, The display panel 700 includes an insulating film 501A, an insulating film 501B, an insulating film 501C, and an insulating film 521A. , insulating film 521B or insulating film 528.

[0122] The display panel 700 includes a colored film CF1, a colored film CF2, a light-shielding film BM, an insulating film 771, an alignment film A, and a F1, alignment film AF2 or optical film 770P.

[0123] The display panel 700 includes a driving circuit GD or a driving circuit SD.

[0124] "Board 570" A material having heat resistance enough to withstand heat treatment during the manufacturing process can be used for the substrate 570. Cut.

[0125] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 Large glass substrates such as 10th generation (2950mm x 3400mm) 570. This allows a large display device to be manufactured.

[0126] The substrate 570 may be made of organic material, inorganic material, or a composite material of organic and inorganic materials. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 570. can be done.

[0127] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, stone Quartz or sapphire can be used for the substrate 570. Specifically, inorganic oxides, Materials including inorganic nitrides or inorganic oxynitrides can be used for the substrate 570. For example, materials containing silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc. The substrate 570 may be made of stainless steel or aluminum. It can be used for the substrate 570.

[0128] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a silicon A compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the substrate 570. This allows semiconductor elements to be formed on the substrate 570.

[0129] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film or the like. Composite materials such as fibrous or particulate metals, gases, etc. may be used for the substrate 570. A composite material in which glass or inorganic materials are dispersed in a resin film is used for the substrate 570. For example, a fibrous or particulate resin or organic material can be dispersed in an inorganic material. A composite material can be used for the substrate 570 .

[0130] Additionally, a single layer of material or a multi-layered material can be used for the substrate 570. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material is called a substrate. 570. Specifically, it prevents the diffusion of impurities contained in glass. One or more layers selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc. A material in which several films are laminated can be used for the substrate 570. Alternatively, a material in which resin and resin are laminated can be used. Silicon oxide film, silicon nitride film, silicon oxynitride film, etc. that prevents diffusion of impurities A laminated material can be used for the substrate 570.

[0131] Specifically, polyester, polyolefin, polyamide (nylon, aramid, etc.), Polyimide, polycarbonate, acrylic resin, urethane resin, epoxy resin or A material containing a resin having a siloxane bond, such as silicone, can be used for the substrate 570. Or a film, plate or laminate containing one or more resins selected from these. etc. can be used for the substrate 570.

[0132] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES), acrylic, etc. may be used for the substrate 570. can.

[0133] Alternatively, the substrate 570 may be made of paper or wood.

[0134] For example, a flexible substrate can be used for the substrate 570 .

[0135] Note that a method of directly forming a transistor or a capacitor on a substrate can be used as a manufacturing method. Also, a transistor or a capacitor element can be formed on a heat-resistant substrate for a process. A method of transferring a formed transistor or capacitor element to a substrate can be used as a manufacturing method. As a result, for example, the substrate 570 included in the display panel of one embodiment of the present invention can be The heat treatment temperature during the process can be suppressed. As a result, the transfer to a flexible substrate is possible. A transistor, a capacitor, or the like can be formed.

[0136] <<Board 770>> A light-transmitting material can be used for the substrate 770. For example, The substrate 770 can be made of a material selected from materials that can

[0137] {Wiring 511, Terminal 519} A conductive material can be used for the wiring 511 and the terminal 519 .

[0138] For example, inorganic conductive materials, organic conductive materials, etc. may be used for the wiring 511 or the terminal 519. This can be done.

[0139] Specifically, metal or conductive ceramics may be used for the wiring 511 or the terminal 519. For example, aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, Selected from iridium, tungsten, nickel, iron, cobalt, palladium or manganese The metal elements can be used for the wiring 511 or the terminal 519. An alloy containing the metal element can be used for the wiring 511 or the terminal 519. In particular, an alloy of copper and manganese is suitable for microfabrication using a wet etching method.

[0140] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium nitride film, Two-layer structure with a tungsten film laminated on a titanium nitride film, two-layer structure with a tungsten film laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium film or a tungsten nitride film; A three-layer structure in which an aluminum film is layered on top of the titanium film, and a titanium film is then formed on top of that. The wiring 511 or the terminal 519 can be made of the same material as the wiring 511 or the terminal 519 .

[0141] For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium Conductive oxides such as zinc oxide doped with ammonium may be used for the wiring 511 or the terminal 519. This can be done.

[0142] Specifically, a film containing graphene or graphite is used for the wiring 511 or the terminal 519. You can be there.

[0143] For example, a film containing graphene oxide is formed and reduced to obtain a graphene oxide film. Specifically, a method of applying heat or a method of forming a graphene-containing film can be used. A method using a reducing agent or the like can be used as the reduction method.

[0144] For example, a conductive polymer can be used for the wiring 511 or the terminal 519 .

[0145] <<First connecting portion 704C, second connecting portion 504C>> A conductive material may be used for the first connecting portion 704C and the second connecting portion 504C. For example, a material that can be used for the wiring 511 or the terminal 519 can be used. can.

[0146] 《Joining layer 505, sealing material 705》 Inorganic material, organic material, or composite material of inorganic material and organic material, etc. is used as a bonding layer 505 or a sealing material Can be used for 705.

[0147] For example, an organic material such as a heat-melting resin or a hardening resin is used as the bonding layer 505 or the sealing material. Can be used for 705.

[0148] For example, reactive curing adhesives, light curing adhesives, heat curing adhesives and / or anaerobic adhesives. An organic material such as an adhesive can be used for the bonding layer 505 or the sealant 705 .

[0149] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing Ethylene Vinyl Acetate (EVA) resin, etc. are used as the bonding layer 505 or can be used as the sealing material 705.

[0150] 《Structure KB1, Structure KB2》 For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material may be used as the structure KB1 or This can be used for the structure KB2. The body KB2 can be provided between the sandwiching structures.

[0151] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of a plurality of resins selected from these. A composite material or the like can be used for the structure KB1 or the structure KB2. A material formed using a material that can be used.

[0152] 《Pixel 702(i,j)》 The pixel 702(i,j) is a pixel including the first display element 750, the second display element 550, or the functional layer 5 Equipped with 20.

[0153] The pixel 702(i, j) includes a colored film CF1, a light-shielding film BM, an insulating film 771, and an alignment film AF. 1. It may have an alignment film AF2 or a coloring film CF2.

[0154] First display element 750 For example, a display element having a function of controlling reflection or transmission of light may be used as the first display element 750. For example, it can be used in a configuration in which a liquid crystal element and a polarizing plate are combined, or in a shutter A reflective type MEMS display element can be used. Specifically, the reflective liquid crystal display element can reduce the power consumption of the display panel. It can be used for the first display element 750.

[0155] Specifically, IPS (In-Plane-Switching) mode, TN (Twis ted Nematic) mode, FFS (Fringe Field Switching ng) mode, ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB (Optically Compensated Bi refringence mode, FLC (Ferroelectric Liquid Crystal Crystal) mode, AFLC (AntiFerroelectric Liquor) mode, A liquid crystal element that can be driven using a driving method such as a liquid crystal (LCD) mode It can be used.

[0156] Furthermore, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Orthogonal Alignment mode, ECB (Electrically Co ntrolled Birefringence) mode, CPA(Continuouou) mode Pinwheel Alignment mode, ASV (Advanced Su The liquid crystal element can be driven using a driving method such as a (per-View) mode. It is possible.

[0157] For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, etc. can be used. Cholesteric phase, smectic phase, chiral phase, etc. Liquid crystal materials that exhibit a cubic phase, a chiral nematic phase, an isotropic phase, etc. can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

[0158] For example, a layer 753 containing a liquid crystal material is arranged so that an electric field can be applied to control the alignment of the liquid crystal material. The first conductive film 751 and the second conductive film 752 are used for the first display element 750. It is possible.

[0159] A conductive material can be used for the first conductive film 751 and the second conductive film 752. do.

[0160] For example, the material used for the wiring 511 is used for the first conductive film 751 or the second conductive film 752. It is possible.

[0161] 《Reflective film》 For example, a material that reflects light transmitted through the layer 753 containing the liquid crystal material may be used as the reflective film. This allows the first display element 750 to be a reflective liquid crystal element.

[0162] Furthermore, for example, a material having an uneven surface can be used for the reflective film. It can reflect incident light in various directions to produce a white display.

[0163] The first conductive film 751 made of a material that reflects visible light can be used as a reflective film. .

[0164] The first conductive film 751 is not limited to a structure in which it is used as a reflective film. A reflective film made of a material that reflects visible light is used between the layer 753 and the first conductive film 751. Alternatively, a reflective film using a material that reflects visible light and a layer 753 containing a liquid crystal material can be used. A first conductive film 751 made of a light-transmitting and conductive material can be used between the first conductive film 751 and the second conductive film 752. can.

[0165] Note that the second conductive film 752 is formed using a material that transmits visible light and has conductivity. You can be there.

[0166] For example, a conductive oxide or a conductive oxide containing indium is used for the second conductive film 752. Alternatively, a metal film thin enough to transmit light can be used as the second conductive film 752. It is possible.

[0167] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, The second conductive film 752 can be formed using zinc oxide doped with gallium, or the like.

[0168] 《Opening 751H》 The ratio of the area of ​​the openings 75 provided in one pixel to the total area of ​​the non-openings of the reflective film provided in one pixel The ratio of the total area of ​​the opening 751H to the total area of ​​the opening 751H is preferably 0.052 or more and 0.6 or less. If the ratio of the total area of ​​the first display element 750 to the total area of ​​the second display element 750 is too large, the display using the first display element 750 will be too dark. In addition, if the ratio of the total area of ​​the opening 751H is too small, the second display element 550 may not be used. The display becomes dark.

[0169] When the first conductive film 751 is used as a reflective film, the area of ​​one opening 751H is 3 μ m 2 More than 25μm 2 The area of ​​the opening 751H provided in the first conductive film 751 is large. If it is too large, for example, the electric field applied to the layer 753 containing the liquid crystal material becomes non-uniform, and the first display element The display quality of the element 750 is degraded. If the product is too small, the light used for display cannot be extracted from the light emitted by the second display element 550. The rate will decrease.

[0170] The shape of the opening 751H may be polygonal, rectangular, elliptical, circular, or cross. In addition, thin stripes, slits, and checkered patterns can be created by changing the shape of the opening 751H. (See FIG. 1(B) and FIG. 6(A)). 751H may be arranged close to each other (see FIG. 6(B)). The second display element 5 is arranged close to other pixels that have the function of displaying the same color. This is a phenomenon in which light emitted from a pixel 50 is incident on a colored film arranged in an adjacent pixel (crosstalk). This can suppress the phenomenon known as 'k'.

[0171] Preferably, the opening 751H is connected to a colored film CF1 that transmits light of a different color. This prevents the light emitted by the second display element 550 from overlapping the adjacent seams. As a result, a display panel with excellent color reproducibility can be provided. do.

[0172] Second display element 550 For example, a light-emitting element can be used as the second display element 550. Specifically, an organic element electroluminescent element, inorganic electroluminescent element or light-emitting diode The second display element 550 may be a liquid crystal display (LCD) or a liquid crystal display (LCD).

[0173] For example, a laminated body laminated so as to emit white light is formed by adding a layer 5 containing a light-emitting organic compound. Specifically, a luminescent material containing a fluorescent material that emits blue light can be used. a layer containing an organic compound and a layer containing a material other than a fluorescent material that emits green and red light, or and a layer including a material other than the fluorescent material that emits yellow light. It can be used for the layer 553 containing the compound.

[0174] For example, the material used for the wiring 511 is used for the third conductive film 551 or the fourth conductive film 552. It is possible.

[0175] For example, a material that transmits visible light and has conductivity is used for the third conductive film 551. It can be used.

[0176] For example, a material that is reflective to visible light and conductive is used for the fourth conductive film 552. It can be used.

[0177] Specifically, conductive oxides or conductive oxides containing indium, indium oxide, indium Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. , can be used for the third conductive film 551.

[0178] Alternatively, the third conductive film 551 can be formed using a metal film that is thin enough to transmit light.

[0179] <<Functional Layer 520>> The functional layer 520 includes a pixel circuit 730(i,j), a first connection portion 704C, or a second connection portion 704D. The functional layer 520 includes an insulating film 501A, an insulating film 501B, an insulating film 504C, and an insulating film 504D. 01C, insulating film 521A, insulating film 521B, and insulating film 528.

[0180] Pixel circuit 730(i,j) For example, the scanning line G1(i), the scanning line G2(i), the signal line S(j), the wiring ANO, and the wiring VC A circuit electrically connected to OM1 and wiring VCOM2 is used for pixel circuit 730(i, j). (See Figure 1(C)).

[0181] Specifically, the switch SW1, the capacitance element C1, the switch SW2, the capacitance element C2, or the transistor A transistor M can be used in pixel circuit 730(i,j).

[0182] The switch SW1 has a control electrode electrically connected to the scanning line G1(i) and a signal line S(j ) and a first electrode electrically connected to the transistor. You can be there.

[0183] The capacitance element C1 has a first electrode electrically connected to the second electrode of the switch SW1 and a wiring The second electrode is electrically connected to the line VCOM1.

[0184] The first conductive film 751 of the first display element 750 is electrically connected to the second electrode of the switch SW1. The second conductive film 752 of the first display element 750 is electrically connected to the wiring VCOM1. It can continue.

[0185] The switch SW2 has a control electrode electrically connected to the scanning line G2(i) and a signal line S(j ) and a first electrode electrically connected to the transistor SW2. You can be there.

[0186] The transistor M has a gate electrode electrically connected to the second electrode of the switch SW2; The first electrode is electrically connected to the wiring ANO.

[0187] The capacitance element C2 has a first electrode electrically connected to the second electrode of the switch SW2 and a transistor. The second electrode is electrically connected to the second electrode of the transistor M.

[0188] The third conductive film 551 of the second display element 550 is electrically connected to the second electrode of the transistor M. The fourth conductive film 552 of the second display element 550 is electrically connected to the wiring VCOM2. It can continue.

[0189] "Transistor M" The transistor M includes a semiconductor film 508 and a conductive film 509 having an area overlapping the semiconductor film 508. 04 (see FIG. 2B). The transistor M includes a conductive film 512A and a conductive The transistor M has an insulating film 512B between the semiconductor film 508 and the conductive film 504. Equipped with 506.

[0190] The conductive film 504 functions as a gate electrode, and the insulating film 506 functions as a gate insulating film. The conductive film 512A has either a function of a source electrode or a function of a drain electrode. The conductive film 512B has the other of the source electrode function and the drain electrode function.

[0191] The functional layer 520 includes an insulating film 516 or an insulating film 518 that covers the transistor M. This makes it possible to suppress the diffusion of impurities into the transistor M.

[0192] For example, a bottom-gate or top-gate transistor is used as the transistor M. It is possible.

[0193] For example, a transistor using a semiconductor containing a group 4 element can be used. For example, a semiconductor containing silicon can be used for the semiconductor film. , polysilicon, microcrystalline silicon, amorphous silicon, etc. are used as semiconductor films. A transistor can be used.

[0194] For example, a transistor including an oxide semiconductor can be used. an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc; It can be used for body membranes.

[0195] For example, the leakage current in the off state is Specifically, a transistor smaller than the semiconductor film can be used. A transistor including an oxide semiconductor can be used for the gate insulating film.

[0196] This allows the time that the pixel circuit can hold an image signal to be extended by the amorphous silicon The time that can be maintained by a pixel circuit using a transistor having a semiconductor film is longer than the time that can be maintained by a pixel circuit using a transistor having a semiconductor film. Specifically, it is possible to suppress the occurrence of flicker while keeping the selection signal at 30H. The frequency of the pulses may be less than 1 Hz, preferably less than 1 Hz, and more preferably less than once per minute. As a result, fatigue accumulated in the user of the information processing device can be reduced. The power consumption associated with driving can be reduced.

[0197] For example, a transistor using a compound semiconductor can be used. A semiconductor containing arsenic can be used for the semiconductor film.

[0198] For example, a transistor using an organic semiconductor can be used. Organic semiconductors including cesene or graphene can be used for the semiconductor film.

[0199] <Switch SW1, Switch SW2> A transistor can be used for switch SW1 or switch SW2.

[0200] For example, a transistor that can be formed in the same process as the transistor M is called a switch S It can be used for W1 or switch SW2.

[0201] Insulating Film 501A Inorganic oxide film, inorganic nitride film, inorganic oxynitride film, etc., or a plurality of films selected from these The insulating film 501A can be made of a laminated material. silicon oxynitride, silicon oxynitride, aluminum oxide, or the like, or a plurality of layers selected from these. The laminated material can be used for the insulating film 501A.

[0202] Specifically, a 600 nm silicon oxynitride film and a 200 nm silicon nitride film are stacked. A film containing the laminated material can be used for the insulating film 501A.

[0203] Specifically, a silicon oxynitride film having a thickness of 600 nm, a silicon nitride film having a thickness of 200 nm, and a silicon nitride film having a thickness of 20 0 nm thick silicon oxynitride film, 140 nm thick silicon nitride oxide film and 100 nm thick oxide A film containing a laminated material in which silicon nitride films are laminated in this order can be used as the insulating film 501A. Cut.

[0204] Furthermore, a material containing a resin such as polyimide can be used for the insulating film 501A.

[0205] After forming the insulating film on the substrate for processing, it is separated from the substrate for processing, and the insulating film 501A is formed. This allows the thickness of insulating film 501A to be 5 μm or less, preferably 1. It can be made 5 μm or less, more preferably 1 μm or less.

[0206] <Insulating film 501B, insulating film 501C> For example, insulating inorganic materials, insulating organic materials, or insulating materials containing inorganic and organic materials. The composite material can be used for the insulating film 501B or the insulating film 501C.

[0207] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a film selected from these may be used. A laminated material obtained by laminating a plurality of the above-mentioned materials can be used for the insulating film 501B or the insulating film 501C. For example, a silicon oxide film, a silicon nitride film, an aluminum oxide film, or a silicon oxynitride film can be used. Alternatively, a film containing a laminated material in which a plurality of materials selected from these are laminated may be used as the insulating film 501B or the insulating film 501C. It can be used for the veneer 501C.

[0208] For example, the material that can be used for the insulating film 501A can be used for the insulating film 501C. do.

[0209] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of multiple resins selected from these A layer material or a composite material can be used for the insulating film 501B or the insulating film 501C. Furthermore, a material formed using a photosensitive material can be used.

[0210] <<Insulating film 521A, insulating film 521B, insulating film 528>> The materials that can be used for the insulating film 501B or the insulating film 501C are the insulating film 521A, the insulating film 521B, and the insulating film 521C. It can be used for the insulating film 521B or the insulating film 528.

[0211] This allows, for example, the steps resulting from various structures overlapping the insulating film 521A to be flattened. Alternatively, the insulating film 521B disposed between the plurality of wirings can be used to separate the plurality of wirings. Alternatively, the wiring can be formed by forming an opening that overlaps with the third conductive film 551. The insulating film 528 is used to prevent the third conductive film 551 and the fourth conductive film from being short-circuited. This can be prevented at the end of 51.

[0212] 《Colored film CF1, colored film CF2》 A material that transmits light of a predetermined color can be used for the colored film CF1. CF1 can be used, for example, in color filters.

[0213] For example, a material that transmits blue light, a material that transmits green light, a material that transmits red light, A material that transmits yellow light or a material that transmits white light is used for the colored film CF1. can be done.

[0214] For example, the material that can be used for the colored film CF1 can be used for the colored film CF2. Specifically, a material that transmits light that passes through the colored film CF1 can be used for the colored film CF2. As a result, a part of the light emitted from the second display element 550 is reflected by the colored film CF2, the opening The light can be extracted to the outside of the display panel by passing through 751H and the colored film CF1. In addition, a material having a function of converting irradiated light into light of a predetermined color is used for the colored film CF2. Specifically, quantum dots can be used for the colored film CF2. Therefore, a display with high color purity can be achieved.

[0215] 《Light blocking film BM》 A material that blocks light transmission can be used for the light-shielding film BM. For example, it can be used for a black matrix.

[0216] "Insulating Film 771" For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. do.

[0217] <<Alignment film AF1, Alignment film AF2>> For example, a material containing polyimide or the like can be used for the alignment film AF1 or AF2. Specifically, the liquid crystal is shaped using a rubbing treatment or optical alignment technology so that it is aligned in a predetermined direction. The material can be used.

[0218] Optical Film 770P For example, a polarizing plate, a retardation plate, a diffusion film, an anti-reflection film, a light-collecting film, etc. Alternatively, a polarizing plate containing a dichroic dye can be used for the optical film 770P. Can be used for 70P.

[0219] In addition, it has an anti-static film that prevents dust from adhering, a water-repellent film that makes it difficult for dirt to adhere, and a film that improves the appearance of the surface as it is used. Hard coating films that suppress the occurrence of scratches can be used on the optical film 770P. do.

[0220] <Drive circuit GD> Various sequential circuits such as shift registers can be used for the driving circuit GD. For example, A transistor MD, a capacitor element, etc. can be used in the driver circuit GD. A transistor having a semiconductor film that can be formed in the same process as the transistor M is used. It is possible.

[0221] Alternatively, a transistor having a different configuration from that of the transistor M is used as the transistor MD. Specifically, a transistor having a conductive film 524 can be used as the transistor MD. The semiconductor film 508 is disposed between the conductive film 524 and the conductive film 504, and the conductive film 524 is An insulating film 516 is disposed between the conductive film 524 and the semiconductor film 508, and an insulating film 516 is disposed between the semiconductor film 508 and the conductive film 5 For example, an insulating film 506 is provided between the conductive film 504 and the wiring that supplies the same potential as the conductive film 504. The conductive film 524 is electrically connected.

[0222] The same structure as that of the transistor M can be used for the transistor MD.

[0223] <Drive circuit SD> For example, an integrated circuit can be used for the driver circuit SD. A formed integrated circuit can be used.

[0224] For example, the drive circuit SD is connected to a pad formed on the insulating film 501C by COG (chip on glass). Specifically, the pads can be mounted using an anisotropic conductive film. The pads are electrically connected to the pixel circuits 730(i, j). can be.

[0225] <Display panel configuration example 2.> Another structure of a display panel according to one embodiment of the present invention will be described with reference to FIG.

[0226] FIG. 3 shows the main components along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. FIG. 3B is a cross-sectional view illustrating a cross-sectional structure of a display panel 700B according to one embodiment of the present invention. 3B is a cross-sectional view of the transistor MB or the transistor MDB shown in FIG.

[0227] Here, the configuration different from the display panel explained in the display panel configuration example 1 will be explained in detail. However, the above description is used for parts where a similar configuration can be used.

[0228] Specifically, the colored film CF2 is not provided, and the first light emitting element emitting blue, green, red, or other light is provided. 2 display element 550B, a top-gate type transistor MB and a transistor The terminal 519B is electrically connected to the wiring 511 by using a through electrode. The point that the insulating film 570B is provided instead of the substrate 570 will be described with reference to FIG. This is different from the display panel 700.

[0229] Second display element 550B A second display element that emits a different color from the second display element disposed in another pixel (also called a sub-pixel) For example, the second display element 550B that emits blue light is used for one pixel. 50B is used as one pixel, and a second display element that emits green or red light is used as another pixel. There are.

[0230] Specifically, an organic EL device including a layer 553B containing a light-emitting organic compound that emits blue light. The element is used as the second display element 550B. an organic EL element having a layer containing a substance or a layer containing a light-emitting organic compound that emits red light; is used for other pixels.

[0231] The method for forming the layer containing the light-emitting organic compound includes evaporation using a shadow mask, Ink jet or printing methods can be used, which allows for the formation of a pixel that is located at another pixel. forming a layer containing a light-emitting organic compound that emits light of a color different from that of the second display element; can be done.

[0232] The second display element 550B is shaped like a concave mirror, and the emitted light is directed to the opening 751H. This allows the area having the function of emitting light from the second display element 550B to be For example, the opening 751H and the The area of ​​the non-overlapping area can be more than 20% larger than the area of ​​the overlapping area. This reduces the current density flowing through the second display element 550B, thereby suppressing heat generation, for example. Alternatively, the reliability can be improved. The product can be made smaller.

[0233] "Transistor MB" The transistor MB has a conductive film 504 having a region overlapping with the insulating film 501C, and an insulating film 50 1C and a semiconductor film 508 having a region disposed between the conductive film 504. The conductive film 504 functions as a gate electrode (FIG. 3(B)).

[0234] The semiconductor film 508 is divided into a first region 508A that does not overlap with the conductive film 504 and a second region 508B. 8B and a third region overlapping the conductive film 504 between the first region 508A and the second region 508B. The area 508C includes:

[0235] The transistor MB includes an insulating film 506 between the third region 508C and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0236] The first region 508A and the second region 508B have a lower resistance than the third region 508C. and has the function of a source region or a drain region.

[0237] Note that the semiconductor film 508 may be formed by, for example, a method for controlling the resistivity of an oxide semiconductor film, which will be described later. A first region 508A and a second region 508B can be formed. For example, plasma treatment using a gas containing HCl can be applied. When used in a mask, part of the shape of the third region 508C is self-aligned to the shape of the end of the conductive film 704. can be combined.

[0238] The transistor MB includes a conductive film 512A in contact with the first region 508A and a conductive film 512B in contact with the second region 508. The conductive film 512A has a function of a source electrode or a drain electrode. The conductive film 512B has either the function of a source electrode or the function of a drain electrode. It has the other function.

[0239] A transistor that can be formed in the same process as the transistor MB is used for the transistor MDB. Alternatively, it can be used for the switch SW1.

[0240] Terminal 519B For example, the insulating film 501A, the insulating film 501B, and the insulating film 501C are provided with openings. The formed conductive film can be used as a through electrode. A terminal 519B is provided on the side of 501B or insulating film 501C different from the side on which the pixel circuit is formed. In other words, the insulating film 501A and the insulating film 501B can be formed between the pixel circuit and the terminal 519B. 1B or insulating film 501C can be provided.

[0241] Insulating film 570B For example, an insulating film having a thickness of 50 nm or more and less than 10 μm, preferably 100 nm or more and less than 5 μm. Specifically, the insulating film formed on another process substrate can be used as the insulating film 570B. The insulating film can be transposed and used as the insulating film 570B. The thickness can be reduced.

[0242] Specifically, a 600 nm silicon oxynitride film and a 200 nm silicon nitride film are stacked. A film including the laminated material can be used for the insulating film 570B.

[0243] Specifically, a silicon oxynitride film having a thickness of 600 nm, a silicon nitride film having a thickness of 200 nm, and a silicon nitride film having a thickness of 20 0 nm thick silicon oxynitride film, 140 nm thick silicon nitride oxide film and 100 nm thick oxide A film containing a laminated material in which silicon nitride films are laminated in this order can be used as the insulating film 570B. Cut.

[0244] <Display panel configuration example 3.> Another structure of a display panel according to one embodiment of the present invention will be described with reference to FIG.

[0245] FIG. 7 shows the main components along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. FIG. 10 is a cross-sectional view illustrating a cross-sectional configuration of a display panel 700C according to one embodiment of the present invention.

[0246] Here, the configuration different from the display panel explained in the display panel configuration example 1 will be explained in detail. However, the above description is used for parts where a similar configuration can be used.

[0247] Specifically, the colored films CF1 and CF2 are not provided, and the colored films CF1 and CF2 are not provided. The insulating film 501A and the insulating film 501B are provided with the second display element 550B that emits light. The fourth insulating film 501D is provided between the first conductive film 752 and the second conductive film 752. C is provided between the insulating film 501A and the fourth insulating film 501D, and the second conductive film 752C The difference from the display panel 700 described with reference to FIG. 2 is that the display panel 700 has a comb-like shape. do.

[0248] As a result, a liquid crystal material containing the first conductive film 751 and the second conductive film 752C is formed. An electric field is applied to the liquid crystal material of the layer 753 in the direction transverse to the thickness direction of the layer 753 containing the liquid crystal material. As a result, the first display element 750 can be driven using the FFS mode. can be done.

[0249] <<Fourth insulating film 501D>> The material that can be used for the insulating film 501A or the insulating film 501B is used as the fourth insulating film 501. It can be used for D.

[0250] <Method for controlling the resistivity of oxide semiconductors> A method for controlling the resistivity of an oxide semiconductor film will be described.

[0251] The oxide semiconductor film having a predetermined resistivity is formed by stacking the semiconductor film 508, the conductive film 524, and the first region 5 It can be used in either region 508A or second region 508B.

[0252] For example, the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and / or oxygen vacancies in the film The method for controlling the resistivity of an oxide semiconductor can be used to control the resistivity of the oxide semiconductor.

[0253] Specifically, plasma treatment is performed to increase the concentration of impurities such as hydrogen and water and / or oxygen vacancies in the film. It can be used in methods to reduce or eliminate

[0254] Specifically, rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus and nitrogen A plasma treatment using a gas containing one or more selected from the group consisting of: Plasma treatment in a mixed gas atmosphere of Ar and hydrogen, Plasma treatment in a near atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia Alternatively, plasma treatment under a nitrogen atmosphere can be applied. An oxide semiconductor film having high conductivity and low resistivity can be obtained.

[0255] Alternatively, ion implantation, ion doping, or plasma immersion ion implantation may be used. Hydrogen, boron, phosphorus, or nitrogen is implanted into the oxide semiconductor film by an implantation method or the like. As a result, the oxide semiconductor film can have low resistivity.

[0256] Alternatively, an insulating film containing hydrogen may be formed in contact with the oxide semiconductor film, and the insulating film may be This method can be used to diffuse hydrogen into the oxide semiconductor film. The density can be increased and the resistivity can be reduced.

[0257] For example, if the hydrogen concentration in the film is 1×10 22 atoms / cm 3 The above insulating films are made of oxide semiconductors. By forming the oxide semiconductor film in contact with the conductive film, hydrogen can be effectively contained in the oxide semiconductor film. Specifically, a silicon nitride film is used as an insulating film formed in contact with an oxide semiconductor film. can be done.

[0258] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to form water. Oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters, electrons, which act as carriers, may be generated. When bonded to oxygen atoms, electrons can be generated as carriers. As a result, an oxide semiconductor film with high carrier density and low resistivity can be obtained.

[0259] Specifically, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by spectrometry is 8×10 19 atoms / c m 3 or more, preferably 1 × 10 20 atoms / cm 3 More preferably, 5 × 10 2 0 atoms / cm 3 The above oxide semiconductor is used as the conductive film 524, the first region 508A, or the can be suitably used for the second region 508B.

[0260] On the other hand, when an oxide semiconductor with high resistivity is used for the semiconductor film in which the channel of a transistor is formed, It is possible.

[0261] For example, an insulating film containing oxygen, in other words, an insulating film capable of releasing oxygen, is called an oxide semiconductor. The insulating film is formed in contact with a conductor, and oxygen is supplied to the oxide semiconductor film from the insulating film, and the oxide semiconductor film is formed in the film or at the interface. Oxygen vacancies can be compensated for, and thus an oxide semiconductor film with high resistivity can be obtained. can be done.

[0262] For example, a silicon oxide film or a silicon oxynitride film is formed by an insulating film capable of releasing oxygen. It can be used in membranes.

[0263] The oxide semiconductor film in which the oxygen vacancies are filled and the hydrogen concentration is reduced is made into a highly purified intrinsic or substantially intrinsic oxide semiconductor film. Here, the term "substantially intrinsic" refers to an oxide semiconductor film that is substantially highly purified and intrinsic. The carrier density of the conductive film is 8×10 11 pieces / cm 3Less than 1 x 10 11 / cm 3 less than 1×10 10 pieces / cm 3 High purity or genuine Since a highly purified or substantially intrinsic oxide semiconductor film has few carrier generation sources, In addition, the oxide can be made of high-purity intrinsic or substantially high-purity intrinsic material. Since the compound semiconductor film has a low defect state density, the trap state density can be reduced.

[0264] Further, a transistor including a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film is provided. has a significantly smaller off-state current and a channel width of 1×10 6 μm and the channel length L is 10 μm. Even if the element is a transistor, the voltage between the source and drain electrodes (drain voltage) is 1V to 10V. In the range of 1, the off-state current is below the measurement limit of the semiconductor parameter analyzer, that is, 1 x10 -13 It can have characteristics of A or below.

[0265] The above-mentioned high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film is used for the channel region. The transistor using this material has small fluctuations in electrical characteristics and is highly reliable.

[0266] Specifically, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by spectrometry is 2×10 20 atoms / c m 3 Less than or equal to 5 x 10 19 atoms / cm 3 Less than or equal to 1×10 1 9 atoms / cm 3 Below, 5 x 1018 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 Less than or equal to 5 × 10 17 atoms / cm 3 Below, More preferably, 1×10 16 atoms / cm 3 The following oxide semiconductor is used as a transistor: The present invention can be suitably used for semiconductors in which a channel of a capacitor is formed.

[0267] Note that the oxide film has a higher hydrogen concentration and / or oxygen vacancy than the semiconductor film 508 and a lower resistivity. A semiconductor film is used for the conductive film 524 .

[0268] The hydrogen concentration in the conductive film 524 is more than twice the hydrogen concentration in the semiconductor film 508. Preferably, it is 10 times or more.

[0269] The resistivity of the conductive film 524 is 1×10 -8 1×10 times more -1 It is less than double.

[0270] Specifically, the resistivity of the conductive film 524 is 1×10 -3 Ωcm or more 1×10 4 Less than Ωcm, Preferably, 1 x 10 -3 Ωcm or more 1×10 -1 It is less than Ωcm.

[0271] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0272] (Embodiment 2) In this embodiment, a structure of a display panel according to one embodiment of the present invention will be described with reference to FIGS. 1 and 8. He explains while doing so.

[0273] FIG. 1 illustrates a structure of a display panel according to one embodiment of the present invention. 1(B) is a top view of the display panel 700D of the embodiment, and FIG. 1(B) is a top view of the pixel 702 ( i, j).

[0274] 8A and 8B illustrate a structure of a display panel according to one embodiment of the present invention. 10 shows the display panel 70 along the cutting lines X1-X2, X3-X4, and X5-X6. 8B is a cross-sectional view of the transistor M shown in FIG. 8(C) is a cross-sectional view of the transistor MD shown in FIG. 8(A).

[0275] <Display panel configuration example 1.> The display panel 700D described in this embodiment includes a pixel 702(i, j) and a terminal 519D. (1) (see FIG. 1(A)).

[0276] The pixel 702(i, j) is made up of the insulating film 501B and a first insulating film 501B disposed in an opening of the insulating film 501B. the first connection portion 591 and the pixel circuit 730(i,j) electrically connected to the first connection portion 591. a second connection portion 592 electrically connected to the pixel circuit 730(i,j); a first display element 750 electrically connected to the connection portion 591; and a second display element 550 connected thereto (see FIG. 1(C) and FIG. 8(A)).

[0277] The insulating film 501B is an area sandwiched between the first display element 750 and the second display element 550. It has a region.

[0278] The first display element 750 has a function of reflecting incident light and a reflective surface having an opening 751H. The first conductive film 75 has a function of controlling the intensity of the reflected light. 1 can be used as a reflective film.

[0279] The second display element 550 has an area that overlaps with the opening 751H. The region has a function of emitting light toward the opening 751H.

[0280] The terminal 519D(1) is electrically connected to the pixel circuit 730(i,j). (1) has a surface that can function as a contact point, and The surface faces the same direction as the surface of the reflective film that reflects external light used for display.

[0281] Furthermore, pixel circuit 730(i,j) of display panel 700D includes a switching element (e.g., switch SW1 or switch SW2) (see Figure 1(C)).

[0282] The display panel 700D according to one embodiment of the present invention includes an insulating film 501B and an opening in the insulating film 501B. a first connection portion 591 disposed in the pixel circuit; and a pixel circuit electrically connected to the first connection portion 591. a second connection portion 5 electrically connected to the pixel circuit 730(i,j) and the line 730(ij); 92, a first display element 750 electrically connected to the first connection portion 591, and a second connection portion a pixel 702(i,j) comprising a second display element 550 electrically connected to the pixel 592; and a terminal 519D(i,j) electrically connected to the pixel circuit 730(i,j). The insulating film 501B is formed of the first display element 750 and the second display element 5 50, and the terminal 519D(1) can function as a contact. The surface that can function as a contact point is a reflective film that reflects external light used for display. The surface faces in the same direction as the

[0283] As a result, for example, a pixel circuit connected to the terminal is arranged so as to sandwich the second insulating film. The first display element and the second display element can be driven in a manner that is convenient. Alternatively, a novel display panel with excellent reliability can be provided.

[0284] Furthermore, the pixel circuit 730(i,j) of the display panel 700D can be used as a switch. The transistor includes a transistor using amorphous silicon as a semiconductor. It has the function of suppressing the current flowing from the transistor in the off state (Fig. 1(C )reference).

[0285] The display panel 700D suppresses the current flowing through the pixel circuit 730(i, j) in the off state. This allows the display to suppress flickering. Therefore, the frequency with which a selection signal is supplied to the pixel circuit can be reduced. It is possible to provide a novel display panel with reduced noise and excellent convenience and reliability.

[0286] The first display element 750 of the display panel 700D includes a layer 753 containing a liquid crystal material and a liquid crystal A first conductive film 751 and a second conductive film 752 are arranged to control the orientation of the material. The first conductive film 751 is electrically connected to the first connection portion 591. (See Figure 8(A)).

[0287] The second display element 550 of the display panel 700D includes a third conductive film 551 and a third conductive film 552. a fourth conductive film 552 having an area overlapping the third conductive film 551; A layer 553 containing a light-emitting organic compound is provided between the conductive films 552. The conductive film 551 is electrically connected to the second connector 592, and the third conductive film 551 is a light-transmitting film. To have sexuality.

[0288] The display panel 700D uses a reflective liquid crystal element as the first display element 750 and an organic EL element is used as the second display element 550.

[0289] This allows, for example, to use external light and reflective liquid crystal elements in bright environments, and In dimly lit environments, the light emitted by the organic EL element can be used to display images. Under this condition, the display can be achieved by utilizing external light and the light emitted by the organic EL element. As a result, a novel display panel capable of displaying images with excellent visibility can be provided. It is possible to provide a novel display panel that can reduce power consumption. It is possible to provide a novel display panel that is excellent in convenience and reliability.

[0290] Preferably, the second display element 550 has a function of reflecting external light. The fourth conductive film 552 can be made of a material that reflects light.

[0291] And, the number of openings including the opening 751H relative to the total area of ​​the non-openings of the reflective film The ratio of the total area of ​​the opening 751H to the total area of ​​the opening 751H is 0.052 or more and 0.6 or less, and the area of ​​one opening 751H is 3 μm 2 More than 25μm 2 When the first conductive film 751 is used as a reflective film, The ratio of the total area of ​​the openings including the openings 751H to the total area of ​​the non-openings of the conductive film 751 of No. 1 is between 0.052 and 0.6 (see Figure 1(B)).

[0292] In addition, if the area of ​​a pixel is 1, the area of ​​the reflective film relative to the area of ​​the pixel should be 0.5 to 0.9. 5 or less. In addition, the area of ​​the opening 751H in the pixel area can be set to 0.05 It can be between 2 and 0.3.

[0293] This can prevent, for example, the alignment of the liquid crystal material from becoming disordered. In addition, in a dark environment, the organic EL element emits light. As a result, a novel display device with excellent convenience and reliability can be realized. A display panel can be provided.

[0294] The reflective film of the display panel 700D is formed in the region embedded in the insulating film 501B and the region embedded in the insulating film 501 For example, when the first conductive film 751 is used as a reflective film, The conductive film 751 has a region buried in the insulating film 501B, and the side surface and the first connecting portion 591 are Prepare for contact surfaces.

[0295] The terminal 519D(1) is formed in a region buried in the insulating film 501B and in the insulating film 501B. The exposed area is

[0296] This reduces the step that occurs at the end of the first conductive film, and prevents alignment defects due to the step. As a result, a novel display panel with excellent convenience and reliability can be provided. It is possible.

[0297] The display panel 700D may have one or more pixels. The pixel array has n pixels 702(i,j) in the direction perpendicular to the row direction and m pixels in the column direction intersecting the row direction. Here, i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less, m and n are integers of 1 or greater.

[0298] In addition, the pixels 702(i,1) to 702(i,n) arranged in the row direction are electrically connected to It is possible to have a scanning line G1(i) and a scanning line G2(i) connected to each other (see FIG. 1(C)). ).

[0299] In addition, the pixels 702(1,j) to 702(m,j) arranged in the column direction are electrically connected to The signal line S(j) may be connected to the signal line S(j).

[0300] Furthermore, the pixel 702(i, j) of the display panel 700D overlaps with the first display element 750. a colored film CF1 having an opening in a region overlapping with the first display element 750; BM and the colored film CF1 or the light-shielding film BM and the layer 753 containing the liquid crystal material, an insulating film 771 is provided between the colored film CF1 or the light-shielding film BM and the layer 753 containing the liquid crystal material. , (see FIG. 8A). As a result, the insulating film 771 has a thickness based on the thickness of the colored film CF1. Or, the unevenness caused by the light-shielding film BM or the colored film CF1 can be flattened. Diffusion of impurities into the layer 753 containing the material can be suppressed.

[0301] The display panel 700D also includes an alignment film A between the substrate 770 and the layer 753 containing the liquid crystal material. F2, and an alignment film AF1 is provided between the layer 753 containing a liquid crystal material and the insulating film 501B. .

[0302] The display panel 700D is surrounded by a substrate 770, an insulating film 501B, and a sealing material 705. The sealing material 705 is provided between the substrate 770 and the insulating film 5 It has the function of pasting 01B together.

[0303] The display panel 700D also has a substrate 770 and an insulating film 501B between the substrate 770 and the insulating film 501B. and a structure KB1 for controlling the gap between the insulating film 501B.

[0304] The display panel 700D also includes an optical film having an area overlapping with the pixel 702(i, j). The display panel 700D includes an optical film 770P and a liquid crystal material. A substrate 770 is provided between layers 753 .

[0305] The display panel 700D also includes a functional layer 520D. B, an insulating film 501C, an insulating film 521A, an insulating film 521B, and an insulating film 528.

[0306] The insulating film 501B and the insulating film 501C have an opening where the first connecting portion 591 is disposed and a second connecting portion 592. The insulating film 501B has an opening in which the connecting portion 593 of the insulating film 503 is disposed. 1C is stacked on the insulating film 501B. It is also acceptable to use

[0307] The insulating film 521B has a region overlapping with the insulating film 501B.

[0308] The insulating film 521A is disposed between the insulating film 501B and the insulating film 521B.

[0309] The insulating film 521A also has an opening in which the second connecting portion 592 is disposed.

[0310] The insulating film 528 has an opening in which the second display element 550 is disposed.

[0311] The display panel 700D also has a colored film CF2 formed between an opening 751H in the reflective film and a second The display element 550 is disposed between the display element 550.

[0312] The display panel 700D also includes a substrate 570 having an area overlapping with the functional layer 520D, and a functional and a bonding layer 505 that bonds the layer 520D and the substrate 570 together.

[0313] The second display element 550 of the display panel 700D includes a functional layer 520D and a substrate 570D. is disposed between the

[0314] The display panel 700D also includes a structure KB2 between the functional layer 520D and the substrate 570. This allows a predetermined gap to be formed between the functional layer 520D and the substrate 570. Cut.

[0315] The display panel 700D also includes a driving circuit GD. The driving circuit GD includes, for example, a transistor The driver circuit GD includes a select signal MD (see FIG. 1(A) and FIG. 8(A)). to the scanning line G1(i) or the scanning line G2(i).

[0316] The display panel 700D also includes a wiring 511 electrically connected to the pixel circuit 730(i, j). The display panel 700D also has a pixel circuit 730(i, j) electrically connected thereto. The display panel 700D also has a terminal 519D(1). 1 and wiring VCOM2 (see FIG. 1(C) and FIG. 8).

[0317] For example, the conductive material ACF1 is used to connect the flexible printed circuit board FPC1 and the terminal 5 19D(1) can be electrically connected. In addition, for example, a conductive material can be used to electrically connect the display panel 70 OD and the drive circuit SD can be electrically connected.

[0318] The display panel 700D may also have a terminal 519D(2). (2) is formed in the same process as, for example, pixel circuit 730(i, j) or terminal 519D(1). The terminal 519D(2) is electrically connected to another terminal that can be formed as a contact. The surface that can function as a contact point is an external surface used for display. The surface of the reflecting film is oriented in the same direction as the surface of the reflecting film that reflects light. The terminal 519D(2) and the second conductive film 752 can be electrically connected.

[0319] The driver circuit SD has a function of supplying an image signal based on image information.

[0320] The individual elements that make up the display panel 700D will be described below. The components cannot be clearly separated, and one component may also contain other components or parts of other components. There is.

[0321] For example, when a conductive film that reflects visible light is used as the first conductive film 751, 1 can be used as a reflective film, and the first conductive film 751 is a reflective film, and the reflective film is It is also a conductive film 751.

[0322] <Configuration> The display panel 700D has a substrate 570 or a substrate 770, and the display panel 700D has wiring 5 11, has a terminal 519D(1) or a terminal 519D(2) (see FIG. 8(A)).

[0323] The display panel 700D has a sealing material 705 or a bonding layer 505. It has structure KB1 or structure KB2.

[0324] The display panel 700D has a pixel 702(i,j), and the display panel 700D is a first display pixel. The display element 750 has a second display element 550.

[0325] The display panel 700D includes a first conductive film 751, a second conductive film 752, and a layer 75 containing a liquid crystal material. 3. The opening 751H has a reflective film.

[0326] The display panel 700D includes a third conductive film 551, a fourth conductive film 552, and a light-emitting organic compound. The layer 553 includes:

[0327] The display panel 700D includes a functional layer 520D. i, j), having a first connection portion 591, a second connection portion 592 or a third connection portion 593 (See Figure 8(A) and Figure 1(C)).

[0328] The display panel 700D includes a switch SW1, a switch SW2, a transistor M, or a transistor The display panel 700D includes an insulating film 501B, an insulating film 501C, an insulating film 501D, and an insulating film 501E. 21A, insulating film 521B or insulating film 528.

[0329] The display panel 700D includes a colored film CF1, a colored film CF2, a light-shielding film BM, an insulating film 771, and an alignment film. AF1, alignment film AF2 or optical film 770P.

[0330] The display panel 700D includes a driving circuit GD or a driving circuit SD.

[0331] "Board 570" A material having heat resistance enough to withstand heat treatment during the manufacturing process can be used for the substrate 570. For example, the same material as that which can be used for the substrate 570 described in the first embodiment can be used. Fees can be used.

[0332] <<Board 770>> A light-transmitting material can be used for the substrate 770. For example, The substrate 770 can be made of a material selected from materials that can

[0333] Wiring 511, terminal 519D(1), terminal 519D(2) Conductive materials are used for the wiring 511, the terminal 519D(1), and the terminal 519D(2). For example, it can be used for the wiring 511 or the terminal 519 described in the first embodiment. Materials similar to those that can be used for the ion exchange resin can be used.

[0334] <<First connection portion 591, second connection portion 592, third connection portion 593>> A conductive material can be used for the first connecting portion 591 and the second connecting portion 592. For example, it can be used for the wiring 511, the terminal 519D(1), or the terminal 519D(2). Any material that can be used can be used.

[0335] 《Joining layer 505, sealing material 705》 Inorganic material, organic material, or composite material of inorganic material and organic material, etc. is used as a bonding layer 505 or a sealing material For example, it can be used for the bonding layer 505 or the sealing layer 705 described in Embodiment 1. The same materials as those that can be used for the material 705 and the like can be used.

[0336] 《Structure KB1, Structure KB2》 For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material may be used as the structure KB1 or This can be used for the structure KB2. For example, the structure described in the first embodiment can be provided between the structures that sandwich the body KB2. The same materials as those used for KB1 or structure KB2 can be used. .

[0337] 《Pixel 702(i,j)》 The pixel 702(i,j) is a pixel including the first display element 750, the second display element 550, or the functional layer 5 Equipped with 20D.

[0338] The pixel 702(i, j) includes a colored film CF1, a light-shielding film BM, an insulating film 771, and an alignment film AF. 1. It may have an alignment film AF2 or a coloring film CF2.

[0339] First display element 750 For example, a display element having a function of controlling reflection or transmission of light may be used as the first display element 750. For example, it can be used in a configuration in which a liquid crystal element and a polarizing plate are combined, or in a shutter A reflective type MEMS display element can be used. Specifically, the reflective liquid crystal display element can reduce the power consumption of the display panel. It can be used for the first display element 750. For example, The same materials as those that can be used for the display element 750 can be used.

[0340] 《Reflective film》 For example, a material that reflects light transmitted through the layer 753 containing the liquid crystal material may be used as the reflective film. This allows the first display element 750 to be a reflective liquid crystal element. For example, the same material as that which can be used for the reflective film described in the first embodiment is used. It is possible.

[0341] 《Opening 751H》 For example, a configuration similar to that which can be used for the opening described in the first embodiment is used. It is possible.

[0342] Second display element 550 For example, a light-emitting element can be used as the second display element 550. Specifically, an organic element electroluminescent element, inorganic electroluminescent element or light-emitting diode The second display element 550 may be a liquid crystal display (LCD) or a liquid crystal display (LCD).

[0343] For example, a laminated body laminated so as to emit white light is formed by adding a layer 5 containing a light-emitting organic compound. Specifically, a luminescent material containing a fluorescent material that emits blue light can be used. a layer containing an organic compound and a layer containing a material other than a fluorescent material that emits green and red light, or and a layer including a material other than the fluorescent material that emits yellow light. It can be used for the layer 553 containing the compound.

[0344] For example, the material used for the wiring 511 is used for the third conductive film 551 or the fourth conductive film 552. It is possible.

[0345] For example, a material that transmits visible light and has conductivity is used for the third conductive film 551. It can be used.

[0346] For example, a material that is reflective to visible light and conductive is used for the fourth conductive film 552. It can be used.

[0347] Specifically, conductive oxides or conductive oxides containing indium, indium oxide, indium Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. , can be used for the third conductive film 551.

[0348] Alternatively, the third conductive film 551 can be formed using a metal film that is thin enough to transmit light.

[0349] "Functional Layer 520D" The functional layer 520D includes a pixel circuit 730(i, j), a first connection portion 591, a second connection portion 59 The functional layer 520D includes a second or third connection portion 593. The functional layer 520D also includes an insulating film 501B, an insulating The insulating film 501C includes an insulating film 521A, an insulating film 521B, and an insulating film 528.

[0350] Pixel circuit 730(i,j) For example, a configuration that can be used for the pixel circuit 730(i,j) described in Embodiment 1 may be A similar configuration can be used.

[0351] "Transistor M" The transistor M includes a semiconductor film 508 and a conductive film 509 having an area overlapping the semiconductor film 508. 04 (see FIG. 8B). The transistor M includes a conductive film 512A and a conductive The transistor M has an insulating film 512B between the semiconductor film 508 and the conductive film 504. 506. For example, it can be used for the transistor M described in the first embodiment. A similar configuration can be used.

[0352] <Switch SW1, Switch SW2> A transistor can be used for switch SW1 or switch SW2.

[0353] For example, a transistor that can be formed in the same process as the transistor M is called a switch S It can be used for W1 or switch SW2.

[0354] <Insulating film 501B, insulating film 501C> In this embodiment, a configuration in which an insulating film 501C is stacked on an insulating film 501B will be described as an example. However, it is also possible to use only the insulating film 501B without using the insulating film 501C. The same materials as those that can be used for the insulating film 501B or the insulating film 501C described in the first embodiment are used. Materials can be used.

[0355] <<Insulating film 521A, insulating film 521B, insulating film 528>> For example, the insulating film 521A, the insulating film 521B, or the insulating film 528 described in the first embodiment may be The same materials as those that can be used can be used.

[0356] 《Colored film CF1, colored film CF2》 For example, it can be used for the colored film CF1 or the colored film CF2 described in the first embodiment. The same materials as those used in the first embodiment can be used.

[0357] 《Light blocking film BM》 A material that blocks light transmission can be used for the light-shielding film BM. For example, it can be used for a black matrix.

[0358] "Insulating Film 771" For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. do.

[0359] <<Alignment film AF1, Alignment film AF2>> For example, a material containing polyimide or the like can be used for the alignment film AF1 or AF2. Specifically, a rubbing treatment or a photo-alignment technique is used to align the liquid crystal in a predetermined direction. The formed material can be used.

[0360] Optical Film 770P For example, the same materials as those that can be used for the optical film 770P described in the first embodiment The following materials can be used.

[0361] <Drive circuit GD> For example, a configuration similar to that which can be used for the driver circuit GD described in the first embodiment may be used. It can be used.

[0362] <Drive circuit SD> For example, an integrated circuit can be used for the driver circuit SD. A formed integrated circuit can be used.

[0363] For example, the drive circuit SD is connected to a pad formed on the insulating film 501B by COG (chip on glass). Specifically, anisotropic conductive films are used to form integrated circuits. The pads are electrically connected to the pixel circuits 730(i,j). do.

[0364] <Display panel configuration example 2.> Another structure of a display panel according to one embodiment of the present invention will be described with reference to FIG.

[0365] FIG. 9 is a circuit diagram illustrating a configuration of a pixel circuit that can be used for a display panel of one embodiment of the present invention. The pixel circuits shown in FIGS. 9A to 9D are the same as the pixel circuit 7 shown in FIG. 30(i,j) can be used instead.

[0366] The pixel circuit 730(i,j) shown in FIG. 9(A) is connected to the signal line S1(j) and the signal line S 2(j) is electrically connected to the pixel circuit 730, which will be described with reference to FIG. 1(C). Differs from (i,j).

[0367] Furthermore, the pixel circuit 730(i,j) shown in FIG. 9(B) is connected to the signal line S1(j) and the signal line S 2(j) and the control electrodes of switches SW1 and SW2 are The point electrically connected to the scanning line G1(i) is a pixel that will be described with reference to FIG. It is different from circuit 730(i,j).

[0368] In addition, in the pixel circuit 730(i, j) shown in FIG. 9C, the second electrode of the capacitance element C1 is connected to the wiring The point electrically connected to CS is the pixel circuit 730 described with reference to FIG. (i, j) is different. Note that a different line from the line VCOM1 can be used for the line CS. Cut.

[0369] In addition, in the pixel circuit 730(i, j) shown in FIG. 9(D), the second electrode of the capacitance element C2 is connected to the wiring A point electrically connected to the wiring ANO, and a second gate electrode electrically connected to the wiring ANO. The fact that the transistor M has a polarity is the pixel circuit 730 which will be described with reference to FIG. (i, j) is different from (i, j). The configuration can be used for transistor M.

[0370] <Display panel configuration example 3.> Another structure of a display panel according to one embodiment of the present invention will be described with reference to FIG.

[0371] FIG. 10 illustrates a structure of a display panel according to one embodiment of the present invention. 1 is an embodiment of the present invention in the section lines X1-X2, X3-X4, and X5-X6 shown in FIG. 10 is a cross-sectional view of a display panel 700E.

[0372] The display panel 700E shown in FIG. 10 includes a first conductive film 751 and a second conductive film 75 2 has a region buried in the insulating film 501B and a region exposed from the insulating film 501B. and the second connection portion 592 contains the same conductive material as the third conductive film 551. This is different from the display panel 700D which will be described with reference to (A).

[0373] Specifically, the first display element 750 of the display panel 700E operates in an IPS mode or the like. The device is equipped with a liquid crystal display element that can

[0374] <Display panel configuration example 4.> Another structure of a display panel according to one embodiment of the present invention will be described with reference to FIG.

[0375] FIG. 11 illustrates a structure of a display panel according to one embodiment of the present invention. 1 is an embodiment of the present invention in the section lines X1-X2, X3-X4, and X5-X6 shown in FIG. 10 is a cross-sectional view of a display panel 700F.

[0376] The display panel 700F shown in FIG. 11 includes an electronic ink layer instead of the layer 753 containing a liquid crystal material. The first conductive film 751 has a layer 753T including the transparent conductive film 753T. The structure KB3 having a light-transmitting property is shown in FIG. The point in the area overlapping with the display element 550 is the display panel described with reference to FIG. It is different from the 700D.

[0377] Specifically, the layer 753T containing electronic ink of the display panel 700F is a layer of an electrophoretic type or the like. This includes rewritable electronic ink, which can be rewritten or erased by electrical control. It has the function to do so.

[0378] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0379] (Embodiment 3) In this embodiment, a manufacturing method of a display panel of one embodiment of the present invention will be described with reference to FIGS. This will be explained with reference to the following.

[0380] FIG. 12 is a flowchart illustrating a method for manufacturing a display panel 700D of one embodiment of the present invention. 13 to 19 are cut along the cutting lines X1-X2, X3-X4, and X5 shown in FIG. 1(A). 10 is a cross-sectional view of the display panel 700D during the manufacturing process at -X6.

[0381] <Display panel manufacturing method> The method for manufacturing the display panel 700D described in this embodiment includes the following 11 steps: do.

[0382] First Step In the first step, an insulating film 501A is formed on a substrate for processing (see FIG. 12(U1)). For example, the insulating film 501A is formed so as to sandwich a peeling film 510W between the insulating film 501A and the substrate 510. do.

[0383] For example, a substrate having a substrate 510 and a release film 510W having an area overlapping with the substrate 510 may be used. The plate can be used as a substrate for processing.

[0384] A material having heat resistance enough to withstand heat treatment during the manufacturing process can be used for the substrate 510. Cut.

[0385] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 Large glass substrates such as 10th generation (2950mm x 3400mm) 510. This allows a large display device to be manufactured.

[0386] The substrate 510 may be made of an organic material, an inorganic material, or a composite material of an organic material and an inorganic material. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 510. can be done.

[0387] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, stone Quartz or sapphire can be used for the substrate 510. Specifically, inorganic oxides, Materials including inorganic nitrides or inorganic oxynitrides can be used for the substrate 510. For example, materials containing silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc. The substrate 510 may be made of stainless steel or aluminum. It can be used for the substrate 510.

[0388] For example, organic materials such as resin, resin film, or plastic may be used for the substrate 510. Specifically, polyester, polyolefin, polyamide, polyimide, poly A resin film or plate such as carbonate or acrylic resin is used as the substrate 510. It is possible.

[0389] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film or the like. A composite material such as a fibrous or particulate metal, a glass, or the like can be used for the substrate 510. A composite material in which glass or inorganic materials are dispersed in a resin film is used for the substrate 510. For example, a fibrous or particulate resin or organic material can be dispersed in an inorganic material. A composite material may be used for the substrate 510 .

[0390] Also, a single layer material or a multi-layer laminated material can be used for the substrate 510. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material is called a substrate. It can be used for 510.

[0391] For example, in the ninth step, the insulating film 501A can be separated from the substrate 510. A material having this function can be used for the release film 510W.

[0392] The insulating film 501A is separated from the substrate 510, leaving the peeling film 510W on the substrate 510 side. Alternatively, the separation film 510W can be separated from the substrate 510 together with the insulating film 501A. It is possible.

[0393] Specifically, a non-alkali glass substrate is used as the substrate 510, and a film containing tungsten or the like is peeled off. The insulating film 501A is made of a film containing an inorganic oxide or an inorganic oxynitride. In this case, the insulating film 501A is separated from the substrate 510, leaving the peeling film 510W on the substrate 510 side. It is possible.

[0394] In addition, a non-alkali glass substrate is used as the substrate 510, and a film containing polyimide is used as the peeling film 510W. When a film containing various materials is used as the insulating film 501A, The release film 510W can be separated from the substrate 510.

[0395] For example, the insulating film 501A is formed so as to be in contact with the peeling film 510W. The method may be a phase growth method, a sputtering method, a coating method, or the like. Unnecessary portions are removed using photolithography or the like to form an insulating film 501A.

[0396] The insulating film 501A is peeled off so that the insulating film 501A comes into contact with the substrate 510 at the periphery thereof. It is preferable to form the insulating film 501A in a shape larger than the insulating film 510W. This can prevent the occurrence of problems such as 501A unintentionally separating from the process substrate. do.

[0397] Specifically, a glass plate having a thickness of 0.7 mm is used as the substrate 510, and the thicknesses of the glass plates are sequentially increased from the substrate 510 side. The laminated material consisting of a 200 nm silicon oxynitride film and a 30 nm tungsten film was peeled off. The release film 510W is then used. From the release film 510W side, a 600 nm thick silicon oxynitride film is The film including the laminated material in which the bare film and silicon nitride with a thickness of 200 nm are laminated is made into the insulating film 501A. It should be noted that the silicon oxynitride film has a higher oxygen content than the nitrogen content, and The silicon oxide film has a higher nitrogen content than oxygen content.

[0398] Specifically, instead of the insulating film 501A, a 600 nm thick film is formed on the peeling film 510W side. silicon oxynitride film, silicon nitride film with a thickness of 200 nm, silicon oxynitride film with a thickness of 200 nm, A laminated material consisting of a 140 nm silicon nitride oxide film and a 100 nm silicon oxynitride film. A film containing the material can be used for the insulating film 501A.

[0399] Second Step In the second step, a reflective film and a terminal are formed (see FIG. 12(U2)). In this embodiment mode, an example in which the first conductive film 751 is used as a reflective film will be described.

[0400] For example, the reflective film has an opening 751H, and the terminals are terminal 519D(1) and terminal 519D (2) is included.

[0401] For example, a film containing a conductive material is formed in contact with the insulating film 501A. The method may be a phase growth method, a sputtering method, a coating method, or the like. The unnecessary portions are removed by photolithography or the like to form a first conductive film to be used as a reflective film. The film 751 forms the terminal 519D(1) and the terminal 519D(2).

[0402] The third step In the third step, an insulating film 501B is formed to cover the reflective film and the terminals (FIG. 12( U3). In addition, the insulating film 501B is followed by an insulating film having a region overlapping the insulating film 501B. A velum 501C may be formed.

[0403] The insulating film 501B and the insulating film 501C have openings.

[0404] For example, a film having a function of suppressing the diffusion of impurities may be formed so as to cover the reflective film and the terminals. Specifically, chemical vapor deposition, sputtering, coating, or the like can be used. This can be done.

[0405] Next, an opening reaching the first conductive film 751 and a An opening reaching the terminal 519D(1) is formed, and the insulating film 501B and the insulating film 501C are Form.

[0406] The Fourth Step In the fourth step, the first connecting portion 591 and the terminal 5 19D(1) (FIG. 12(U4) and 13). The first connection portion 591 and the terminal 519D(1) are connected to the transistor. A transistor that can be used as switch M, transistor MD or switch SW1. A conductive film 504 may be formed to function as a gate electrode.

[0407] For example, a film containing a conductive material is formed as an insulating film 501C, and an opening reaching the first conductive film 751 is formed as an insulating film. The film is formed in contact with the opening that reaches the terminal 519D(1). The deposition method, sputtering method, coating method, etc. can be used.

[0408] Next, unnecessary portions are removed using photolithography or the like to form the first connecting portion 591. Then, a third connection portion 593 and a conductive film 504 are formed.

[0409] The fifth step In the fifth step, the first connecting portion 591 and the third connecting portion 593 are electrically connected. A pixel circuit is formed (see FIG. 12(U5)).

[0410] For example, a film containing a conductive material, a film containing an insulating material, a film containing a semiconductor material, etc. The film is formed by vapor deposition or sputtering. It is removed by using lithography or other methods. It is removed by combining film formation and photolithography or other methods. The transistors M, MD and SW1 function as switches. A pixel circuit including a pixel and the like is formed.

[0411] Next, an insulating film 516 or an insulating film for protecting elements such as transistors included in the pixel circuit is 518, etc. are formed between the insulating film 516 and the insulating film 518. A conductive film 524 is formed to function as a conductive film.

[0412] Next, the colored film CF2 is formed.

[0413] Next, an insulating film 521A is formed, and an opening reaching the pixel circuit is formed between the insulating film 516 and the insulating film 5 18 and insulating film 521A.

[0414] Step 6 In the sixth step, a second connection portion 592 that connects to the pixel circuit is formed (FIG. 12( 14). Note that wiring may be formed together with the second connecting portion 592.

[0415] For example, a film containing a conductive material is formed by chemical vapor deposition, sputtering, etc. A tucking method, a coating method, or the like can be used.

[0416] Next, unnecessary portions are removed using photolithography or the like to form the second connecting portion 592. Form.

[0417] The Seventh Step In the seventh step, the second display element 55 is electrically connected to the second connection portion 592. 0 (see Figure 12 (U7) and Figure 15).

[0418] For example, an insulating film 521B is formed between the second connection portion 592 and the second display element 550.

[0419] Next, a third conductive film 551 is formed so as to be electrically connected to the second connection portion 592. For example, a film containing a conductive material is formed. Specifically, the film is formed by chemical vapor deposition or sputtering. Then, the unnecessary part can be removed by photolithography or the like. A portion is removed to form a third conductive film 551.

[0420] Next, an insulating film 528 having an opening in a region overlapping with the third conductive film 551 is formed. The end portion of the third conductive film 551 is covered with an insulating film 528. For example, Specifically, a coating method or the like can be used. Unnecessary portions are removed using a lithography method or the like to form an insulating film 528 .

[0421] Next, a structure KB2 is formed in contact with the insulating film 528. For example, when the insulating film 528 is formed, The film is formed using a method similar to that used for forming the film.

[0422] Next, a light-emitting organic layer is formed so as to cover the third conductive layer 551 exposed in the opening of the insulating layer 528. A layer 553 containing a compound is formed. Specifically, the layer 553 is formed by evaporation using a shadow mask method or printing method. Alternatively, an ink jet method or the like can be used.

[0423] Next, a layer 553 containing a light-emitting organic compound is formed between the third conductive film 551 and the The fourth conductive film 552 is formed by evaporation using a shadow mask, sputtering, or the like. A fourth wiring 511 is electrically connected to the fourth wiring 512. A conductive film 552 is formed.

[0424] The Eighth Step In the eighth step, a substrate 570 is laminated (see FIG. 12(U8) and FIG. 16).

[0425] For example, a resin having fluidity is applied to form the bonding layer 505. The inkjet method, printing method, inkjet method, etc. can be used. A bonding layer 505 is formed by adhering a resin or the like having fluidity formed in a molded shape.

[0426] Next, the functional layer 520D and the substrate 570 are bonded together using the bonding layer 505.

[0427] The 9th Step In the ninth step, the process substrate 510 is separated (FIG. 12(U9) and FIG. 17 reference).

[0428] For example, a method of piercing the release film 510W from the side of the process substrate 510 using a sharp tip. Alternatively, the peeling film 51 may be removed by a method using a laser or the like (for example, a laser ablation method). A part of OW is separated from the insulating film 501A. This can form a starting point for peeling. Cut.

[0429] Next, the process substrate 510 is gradually separated from the starting point of peeling.

[0430] Ions are irradiated near the interface between the peeling film 510W and the insulating film 501A to remove static electricity. Specifically, the peeling may be performed by irradiating the surface with ions generated by an ionizer. Alternatively, a liquid may be applied to the interface between the peeling film 510W and the insulating film 501A by permeating the interface or by applying the liquid from a nozzle. For example, water, a polar solvent, or a release film 510W may be sprayed onto the surface. The dissolving liquid can be used as the penetrating liquid or the spraying liquid. By doing so, it is possible to suppress the influence of static electricity and the like that occurs during peeling.

[0431] In particular, when a film containing tungsten oxide is used as the peeling film 510W, it is necessary to prevent penetration of liquids containing water. The substrate 510 is separated while being heated or sprayed. can be reduced.

[0432] The Tenth Step In the tenth step, the insulating film 501A is removed to expose the reflective film and the terminals ( See Figure 12 (U10) and Figure 18).

[0433] For example, the insulating film 501A can be removed using an etching method or chemical mechanical polishing. Specifically, a wet etching method or a dry etching method can be used. do.

[0434] The 11th Step In the eleventh step, a first display element is formed (FIG. 12 (U11) and FIG. 19 reference).

[0435] For example, a counter substrate is prepared. Specifically, a light-shielding film BM, a colored film CF1, an insulating film 771, The second conductive film 752, the structure KB1, and the alignment film AF2 are formed on a substrate 770. Prepare the board.

[0436] Next, an alignment film AF1 having a region overlapping the insulating film 501B and the first conductive film 751 is formed. Specifically, the film is formed by using a printing method or a rubbing method.

[0437] Next, a sealing material 705 is formed. Specifically, a sealing material 705 is formed by using a dispenser or a printing method. In addition, a conductive resin is applied to the area overlapping with the terminal 519D(2). A material containing the component CP is applied.

[0438] Next, the liquid crystal material is dropped into the area surrounded by the frame-shaped sealing material 705. etc. are used.

[0439] Next, a substrate 770 is attached to the insulating film 501B using a sealing material 705. The structure KB1 is sandwiched between the film 501B and the terminal 519D(2) using the conductive member CP. The two conductive films 752 are electrically connected.

[0440] The manufacturing method of the display panel 700D described in this embodiment is as follows: and removing the insulating film 501A to expose the reflective film and the terminals. This reduces the step that occurs at the edge of the reflective film, and the alignment based on the step is In addition, the surface that functions as the contact point of the terminal is exposed. As a result, a novel method for producing a display panel that is highly convenient and reliable can be provided. It can be provided.

[0441] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0442] (Fourth embodiment) In this embodiment, a structure of a transistor that can be used for a display panel of one embodiment of the present invention will be described. The structure will be described with reference to FIG.

[0443] <Configuration example of semiconductor device> 20A is a top view of the transistor 100, and FIG. 20C is a top view of the transistor 100 shown in FIG. 20A. 20(A) corresponds to a cross-sectional view of the section taken along the line X1-X2 shown in FIG. 20(D). 20(A) corresponds to a cross-sectional view of the section taken along the line Y1-Y2 shown in FIG. In order to avoid complication, some of the components of the transistor 100 (gate insulator) The illustration omits the insulating film that functions as an insulating film. The channel length direction and the direction of the cutting line Y1-Y2 may be referred to as the channel width direction. In the top view of the transistor, the constituent elements are shown in the following drawings as in FIG. In some cases, some elements may be omitted from the illustration.

[0444] The transistor 100 is used in the display panel described in the first or second embodiment. You can be there.

[0445] For example, when the transistor 100 is used as the transistor M, the substrate 102 is 1C, the conductive film 104 is laminated on the conductive film 504, and the insulating film 106 and the insulating film 107 are laminated. The stacked film is used as the insulating film 506, the oxide semiconductor film 108 is used as the semiconductor film 508, and the conductive film 112a is used as the The conductive film 512A is connected to the conductive film 112b, the conductive film 112b is connected to the conductive film 512B, and the insulating film 114 and the insulating film 11 The laminated film in which the insulating film 118 is laminated is the insulating film 516, and the insulating film 118 is the insulating film 518. It can be replaced.

[0446] The transistor 100 includes a conductive film 104 over a substrate 102, which functions as a gate electrode, and a gate insulating film 106 over a substrate 102. 102 and an insulating film 106 on the conductive film 104, an insulating film 107 on the insulating film 106, and an insulating film The oxide semiconductor film 108 on the gate electrode 107 and the source electrode 108 electrically connected to the oxide semiconductor film 108 The conductive film 112a serving as an electrode and the drain electrically connected to the oxide semiconductor film 108 are The transistor 100 also has a conductive film 112b which functions as a gate electrode. More specifically, an insulating film 114, an insulating film 115, an insulating film 116, an insulating film 117, an insulating film 118, an insulating film 119, an insulating film 120, an insulating film 121a, an insulating film 121b ...c, an insulating film 121d, an insulating film 121e, an insulating film 121f, an insulating film 1 The insulating films 114, 116, and 118 are provided on the transistor. It functions as a protective insulating film for the capacitor 100.

[0447] In addition, the oxide semiconductor film 108 is formed by the first oxide film 104 on the conductive film 104 side, which functions as a gate electrode. a first oxide semiconductor film 108a and a second oxide semiconductor film 108b on the first oxide semiconductor film 108a. The insulating film 106 and the insulating film 107 are formed on the gate electrode of the transistor 100. It functions as an insulating film.

[0448] The oxide semiconductor film 108 may be an In-M (wherein M is Ti, Ga, Sn, Y, Zr, La, In-Zn oxides, In-Mn-Zn oxides, and In-Zn oxides (representing Ce, Nd, or Hf) can be used. In particular, it is preferable to use In-M-Zn oxide for the oxide semiconductor film 108.

[0449] The first oxide semiconductor film 108a has a first oxide semiconductor layer in which the atomic ratio of In is larger than the atomic ratio of M. The second oxide semiconductor film 108b has a region The second region has a lower atomic ratio of In than the first region. It has thinner parts.

[0450] The first oxide semiconductor film 108a has a first region in which the atomic ratio of In is larger than the atomic ratio of M. By doing so, the field effect mobility (simply called mobility, or μFE in some cases) of the transistor 100 can be Specifically, the field-effect mobility of the transistor 100 can be increased. is 10cm 2 / Vs can be exceeded.

[0451] For example, the above-mentioned high field effect mobility transistor is connected to a gate driver that generates a gate signal. driver (especially, the demultiplexer connected to the output terminal of the shift register of the gate driver) By using it in a semiconductor device or display device with a narrow frame width (also called a narrow frame), can be provided.

[0452] On the other hand, a first oxide semiconductor having a first region in which the atomic ratio of In is larger than the atomic ratio of M. By using the film 108a, the electrical characteristics of the transistor 100 are likely to change when irradiated with light. However, in the semiconductor device of one embodiment of the present invention, the first oxide semiconductor film 108 The second oxide semiconductor film 108b is formed on the second oxide semiconductor film 108a. The thickness of the channel region of the first oxide semiconductor film 108b is smaller than the thickness of the first oxide semiconductor film 108a.

[0453] The second oxide semiconductor film 108b contains more In atoms than the first oxide semiconductor film 108a. Since the second region has a smaller molecular weight ratio, Eg is larger than that of the first oxide semiconductor film 108a. Therefore, the first oxide semiconductor film 108a and the second oxide semiconductor film 108 The oxide semiconductor film 108 having a stacked structure with b has high resistance to a negative bias stress test using light irradiation. It will become more expensive.

[0454] By using the oxide semiconductor film having the above structure, the light absorption of the oxide semiconductor film 108 during light irradiation can be improved. Therefore, the current of the transistor 100 when irradiated with light can be reduced. In addition, in the semiconductor device of one embodiment of the present invention, Since the insulating film 114 or the insulating film 116 contains excess oxygen, Fluctuations in the electrical characteristics of the transistor 100 can be further suppressed.

[0455] Here, the oxide semiconductor film 108 will be described in detail with reference to FIG.

[0456] FIG. 20B shows a cross section of the transistor 100 shown in FIG. 20C. FIG. 10 is an enlarged cross-sectional view of the vicinity of a film 108.

[0457] In FIG. 20B, the thickness of the first oxide semiconductor film 108a is t1. The thicknesses of the compound semiconductor film 108b are indicated as t2-1 and t2-2, respectively. Since the second oxide semiconductor film 108b is provided over the first oxide semiconductor film 108a, When the conductive films 112a and 112b are formed, the first oxide semiconductor film 108a is etched. Therefore, the first oxide semiconductor is not exposed to etching gas or etching solution. The thickness of the second oxide film 108a is either not reduced or is very small. In the conductive film 108b, the second oxide The portions of the semiconductor film 108b that do not overlap with the conductive films 112a and 112b are etched to form recesses. That is, the conductive films 112a and 112b of the second oxide semiconductor film 108b are formed. The thickness of the overlapping region is t2-1, and the conductive film 112a of the second oxide semiconductor film 108b The thickness of the region that does not overlap with 112b is t2-2.

[0458] The relationship between the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is t2- It is preferable that t1>t1>t2-2. By making such a film thickness relationship, high A transistor having a high field effect mobility and a small amount of fluctuation in threshold voltage when irradiated with light. It will be possible to make it a star.

[0459] Furthermore, when oxygen vacancies are formed in the oxide semiconductor film 108 of the transistor 100, Therefore, oxide semiconductors tend to have normally-on characteristics. To reduce oxygen vacancies in the film 108, particularly in the first oxide semiconductor film 108a. is also important for obtaining stable transistor characteristics. Therefore, in the configuration of the transistor according to one aspect of the present invention, by introducing excess oxygen into the insulating film on the oxide semiconductor film 108, here, the insulating films 114 and / or 116 on the oxide semiconductor film 108, oxygen is moved from the insulating films 114 and / or 116 into the oxide semiconductor film 108 to compensate for oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. In the configuration of the transistor, the insulating film on the oxide semiconductor film 108, here, the insulating films 114 and / or 116 on the oxide semiconductor film 108 is characterized by introducing excess oxygen into the insulating film 114 and / or the insulating film 116 to move oxygen from the insulating films 114 and / or 116 into the oxide semiconductor film 108 and compensate for oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. Specifically, it is characterized by moving oxygen from the insulating films 114 and / or 116 into the oxide semiconductor film 108 to compensate for oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. In the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a, oxygen vacancies are compensated. This is the feature.

[0460] <00026​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​"substrate" There is no particular restriction on the material of the substrate 102, but it should be strong enough to withstand the subsequent heat treatment. It must be heat resistant. For example, glass substrates, ceramic substrates, quartz substrates, and surface treatment substrates are A fiber substrate or the like may be used as the substrate 102 .

[0464] In addition, single crystal semiconductor substrates, polycrystalline semiconductor substrates, and silicon carbide substrates are also available. Compound semiconductor substrates such as congermanium, SOI substrates, etc. can also be used.

[0465] In addition, a substrate on which a semiconductor element or an insulating film is provided is referred to as a substrate 102. It may also be used.

[0466] When a glass substrate is used as the substrate 102, the sixth generation (1500 mm×1850 mm), 7th generation (1870mm x 2200mm), 8th generation (2200mm x 2400 mm), 9th generation (2400mm x 2800mm), 10th generation (2950mm x 340 By using a large-area substrate such as a 100mm thick substrate, a large display device can be manufactured.

[0467] In addition, a flexible substrate is used as the substrate 102, and the transistor 100 is directly formed on the flexible substrate. Alternatively, a peeling layer may be provided between the substrate 102 and the transistor 100. The release layer is used to separate the semiconductor device from the substrate 102 after a part or all of the semiconductor device is completed thereon. The transistor 100 can be separated and transferred to another substrate. It can also be transferred to less rigid or flexible substrates.

[0468] <Conductive film functioning as gate electrode, source electrode, and drain electrode> The conductive film 104 functions as a gate electrode, and the conductive film 112a functions as a source electrode. The conductive film 112b functioning as the drain electrode is made of chromium (Cr), copper (Cu ), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo ), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel A metal element selected from nickel (Ni), iron (Fe), and cobalt (Co), or the above-mentioned gold The alloys are made of metal elements or alloys that combine the above-mentioned metal elements. It can be achieved.

[0469] The conductive films 104, 112a, and 112b may have a single-layer structure or a stacked structure of two or more layers. For example, a single layer structure of an aluminum film containing silicon, a titanium film on an aluminum film, Two-layer structure with titanium film stacked on titanium nitride film, two-layer structure with titanium film stacked on titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film Two-layer structure with a titanium film and an aluminum film stacked on top of the titanium film. There are three-layer structures, such as a titanium film formed on top of the aluminum. selected from the group consisting of tantalum, tungsten, molybdenum, chromium, neodymium, and scandium An alloy film or a nitride film made by combining one or more of these may also be used.

[0470] The conductive films 104, 112a, and 112b are made of indium tin oxide or tungsten oxide. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide, titanium oxide, indium tin oxide, indium zinc oxide, By using a conductive material with light transmission such as indium tin oxide with added silicon oxide, It can also be done as follows.

[0471] The conductive films 104, 112a, and 112b are made of a Cu-X alloy film (X is Mn, Ni, C r, Fe, Co, Mo, Ta, or Ti) may be used. This allows for processing using a wet etching process, which reduces manufacturing costs. It becomes Noh.

[0472] <Insulating film that functions as a gate insulating film> The insulating films 106 and 107 functioning as gate insulating films of the transistor 100 are Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon oxide is deposited by vapor deposition, sputtering, etc. film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, Hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, titanium oxide film tantalum film, magnesium oxide film, lanthanum oxide film, cerium oxide film and neodymium oxide film The insulating films 106 and 107 may each contain one or more of the following: Instead of a laminated structure, a single layer insulating film selected from the above materials or an insulating film with three or more layers is used. It may be used.

[0473] The insulating film 106 also functions as a blocking film that suppresses oxygen permeation. For example, excess oxygen may be present in the insulating films 107, 114, and 116 and / or the oxide semiconductor film 108. When oxygen is supplied, the insulating film 106 can suppress oxygen permeation.

[0474] Note that the oxide semiconductor film 108, which functions as a channel region of the transistor 100, is in contact with the oxide semiconductor film 108. The insulating film 107 is preferably an oxide insulating film, and has an oxygen content in excess of the stoichiometric composition. In other words, it is more preferable that the insulating film 10 has a region containing oxygen (an oxygen-excess region). The insulating film 107 is an insulating film capable of releasing oxygen. To provide the insulating film 107, for example, the insulating film 107 may be formed in an oxygen atmosphere. Oxygen may be introduced into the insulating film 107 to form an oxygen-excess region. These include ion implantation, ion doping, plasma immersion ion implantation, and plasma Processing such as masking can be used.

[0475] Furthermore, when hafnium oxide is used as the insulating film 107, the following effects are achieved. Silicon has a higher dielectric constant than silicon oxide and silicon oxynitride. The film thickness can be made larger than when using silicon dioxide, so the leakage current due to tunneling current is reduced. In other words, it is possible to realize a transistor with a small off-state current. Furthermore, hafnium oxide having a crystalline structure can be easily formed by oxidizing hafnium oxide having an amorphous structure. It has a higher dielectric constant than silicon, and therefore is a transistor with a small off-state current. For this purpose, it is preferable to use hafnium oxide having a crystalline structure. Examples of the crystal system include a monoclinic system and a cubic system. However, one embodiment of the present invention is not limited to these. It will not be done.

[0476] In this embodiment, a silicon nitride film is formed as the insulating film 106, and a silicon nitride film is formed as the insulating film 107. The silicon nitride film has a lower dielectric constant than the silicon oxide film. The thickness required to obtain the same capacitance as a silicon oxide film is large, so The gate insulating film of STA100 contains a silicon nitride film, which physically thickens the insulating film. Therefore, the decrease in the dielectric strength voltage of the transistor 100 can be suppressed, and further, the dielectric strength By improving the breakdown voltage, electrostatic breakdown of the transistor 100 can be suppressed.

[0477] <Oxide semiconductor film> The oxide semiconductor film 108 can be formed using the above-described materials.

[0478] When the oxide semiconductor film 108 is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The atomic ratio of the metal elements in the sputtering target used for this purpose is In≧M, Zn≧M. It is preferable that the atomic ratio of the metal elements in such a sputtering target is In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn= 2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 are preferred .

[0479] In addition, when the oxide semiconductor film 108 is an In-M-Zn oxide, the sputtering target It is preferable to use a target containing polycrystalline In-M-Zn oxide. By using a target containing the In-M-Zn oxide, a crystalline oxide semiconductor can be obtained. The atomic ratio of the oxide semiconductor film 108 to be formed is The error is the planar atomic ratio of the metal elements contained in the sputtering target. For example, as a sputtering target, the atomic ratio is When In:Ga:Zn=4:2:4.1 is used, the raw material of the oxide semiconductor film 108 is The atomic ratio may be in the vicinity of In:Ga:Zn = 4:2:3.

[0480] For example, as the first oxide semiconductor film 108a, the above-mentioned In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1, etc. may be formed using a sputtering target. Also, as the second oxide semiconductor film 108b, the above-mentioned In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, etc. may be used for formation. Note that, as the atomic ratio of the metal elements of the sputtering target used for the second oxide semiconductor film 108b, it is not necessary to satisfy In≥M and Zn≥M, and a composition satisfying In≥M and Zn<M may also be used. Specifically, In:M:Zn = 1:3:2, etc. can be mentioned.

[0481] Also, the oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. Thus, by using an oxide semiconductor with a wide energy gap, the off-current of the transistor 100 can be reduced. In particular, for the first oxide semiconductor film 108a, an oxide semiconductor film with an energy gap of 2 eV or more, preferably 2 eV or more and 3.0 eV or less is used, and for the second oxide semiconductor film 108b, an oxide semiconductor film with an energy gap of 2.5 eV or more and 3.5 eV or less is used, which is preferable. Also, it is preferable that the energy gap of the second oxide semiconductor film 108b is larger than that of the first oxide semiconductor film 108a.

[0482]

[0483] Also, the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are each 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, more preferably The thickness is preferably 3 nm or more and 50 nm or less. It is preferable that the film thickness relationship described above is satisfied.

[0483] In addition, an oxide semiconductor film with low carrier density is used as the second oxide semiconductor film 108b. For example, the second oxide semiconductor film 108b has a carrier density of 1×10 17 pieces / cm 3 Less than 1 × 10 15 pieces / cm 3 or less, more preferably 1 × 10 13 pcs / c m 3 Less than or equal to 1×10 11 pieces / cm 3 The following applies.

[0484] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use an appropriate composition depending on the required properties (mobility, threshold voltage, etc.). In order to obtain semiconductor characteristics of the transistor, the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are The carrier density, impurity concentration, defect density, number of metal elements and oxygen atoms of the nitride semiconductor film 108b It is preferable to set the ratio, interatomic distance, density, etc. appropriately.

[0485] Note that the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are By using an oxide semiconductor film with a low impurity concentration and a low density of defect states, In this case, it is preferable to fabricate a transistor having excellent electrical characteristics. The low oxygen vacancy and low defect level density (low oxygen vacancy) are called high purity intrinsic or substantially high purity. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film is called a "high purity intrinsic" oxide semiconductor film. Since the number of oxygen generation sources is small, the carrier density can be reduced. A transistor in which a channel region is formed in a film has electrical characteristics in which the threshold voltage is negative. (also called normally-on) is rare. An intrinsic oxide semiconductor film has a low density of defect states, and therefore a low density of trap states. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film may be formed by The current is extremely small, and the channel width is 1×10 6 μm and the channel length L is 10 μm. Even if there is a voltage between the source electrode and the drain electrode (drain voltage), it is in the range of 1V to 10V. The off-state current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 -13 It can achieve a characteristic of A or below.

[0486] Therefore, the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film has a channel region. The transistors in which this region is formed have small fluctuations in electrical characteristics and are highly reliable. Note that charges trapped in the trap states of the oxide semiconductor film are lost. It takes a long time for the charge to reach a certain level, and it may behave as if it were a fixed charge. A transistor in which a channel region is formed in an oxide semiconductor film with a high density of trap states is electrically Impurities include hydrogen, nitrogen, alkali metals, and alkali metals. Examples include alkaline earth metals.

[0487] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to form water. Oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters, electrons, which act as carriers, may be generated. It can bond with oxygen atoms that bond with atomic atoms to generate electrons, which are carriers. A transistor using an oxide semiconductor film containing hydrogen tends to be normally on. Therefore, it is preferable that the amount of hydrogen in the oxide semiconductor film 108 be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor film 108 obtained by SIMS analysis is , 2 × 10 20 atoms / cm 3 Less than or equal to 5 x 10 19 atoms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Less than or equal to 5 × 10 17 atoms / cm 3 or less, more preferably 1 × 10 16 atoms / cm 3 and do.

[0488] In addition, the first oxide semiconductor film 108a contains silicon and carbon, which are Group 14 elements. When the first oxide semiconductor film 108a contains the fluorine atom, oxygen vacancies increase in the first oxide semiconductor film 108a, and the first oxide semiconductor film 108a becomes n-type. Therefore, the concentrations of silicon and carbon in the first oxide semiconductor film 108a and the first The concentrations of silicon and carbon near the interface with the oxide semiconductor film 108a (obtained by SIMS analysis) The concentration that can be measured is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 ato ms / cm 3 The following applies.

[0489] In addition, in the first oxide semiconductor film 108a, alkali metal oxides obtained by SIMS analysis The concentration of alkaline earth metals is 1×10 18 atoms / cm 3 Below, preferably 2×10 16 atoms / cm 3 Alkali metals and alkaline earth metals are When bonded to a carbide semiconductor, carriers may be generated, increasing the off-state current of the transistor. Therefore, the alkali metal or It is preferable to reduce the concentration of alkaline earth metals.

[0490] When the first oxide semiconductor film 108a contains nitrogen, electrons serving as carriers are generated. As a result, the carrier density increases and the oxide semiconductor containing nitrogen becomes more easily n-type. Therefore, a transistor using the oxide semiconductor film tends to have normally-on characteristics. It is preferable that nitrogen is reduced as much as possible in the film. For example, The resulting nitrogen concentration is 5 x 10 18 atoms / cm 3 It is preferable to do the following:

[0491] The first oxide semiconductor film 108a and the second oxide semiconductor film 108b are The non-single crystal structure may be, for example, CAAC-OS (C Axi s Aligned Crystalline Oxide Semiconductor r), polycrystalline structure, microcrystalline structure, or amorphous structure. In non-single crystalline structures, amorphous The CAAC-OS structure has the highest density of defect states, while the CAAC-OS structure has the lowest density of defect states.

[0492] <An insulating film that functions as a protective insulating film for transistors> The insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. The insulating film 118 functions as a protective insulating film for the transistor 100. The insulating film 114 and the insulating film 116 contain oxygen. The insulating film 114 is an insulating film. The insulating film 114 is formed by oxidation when the insulating film 116 is formed later. It also functions as a film for reducing damage to the compound semiconductor film 108 .

[0493] The insulating film 114 has a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm. Silicon oxide, silicon oxynitride, etc. having a thickness of m or less can be used.

[0494] Furthermore, it is preferable that the insulating film 114 has a small number of defects. , the spin density of the signal appearing at g=2.001 due to the silicon dangling bond is 3×10 17 spins / cm 3 This is because the insulating film 114 contains If the density of defects contained in the insulating film 114 is high, oxygen will be bonded to the defects, and the amount of oxygen in the insulating film 114 will increase. The amount of transmission decreases.

[0495] In the insulating film 114, all of the oxygen that has entered the insulating film 114 from the outside is Some oxygen does not move to the outside and remains in the insulating film 114. At the same time, oxygen contained in the insulating film 114 moves to the outside of the insulating film 114, Oxygen may move through the insulating film 114. When the oxide insulating film 116 is formed, the insulating film 114 is separated from the insulating film 116. The released oxygen can be transferred to the oxide semiconductor film 108 through the insulating film 114.

[0496] The insulating film 114 is formed using an oxide insulating film with a low density of states due to nitrogen oxides. Note that the density of states due to the nitrogen oxide can be determined by the valence charge of the oxide semiconductor film. The energy of the upper edge of the electron band (Ev_os) and the energy of the lower edge of the conduction band of the oxide semiconductor film ( The oxide insulating film may be formed between the gate electrode and the gate electrode. Silicon oxynitride film with low nitrogen oxide emission or aluminum oxynitride film with low nitrogen oxide emission A film such as a cellulose nitrate film can be used.

[0497] In addition, a silicon oxynitride film that emits a small amount of nitrogen oxides is This membrane releases more ammonia than nitrogen oxides, and typically The emission amount is 1×10 18 pieces / cm 3 5x10 or more 19 pieces / cm 3 The following is the case. The amount of Nia released is determined when the surface temperature of the film is 50°C or higher and 650°C or lower, preferably 50°C or higher and 550°C or lower. The amount released by heating at or below ℃.

[0498] Nitrogen oxides (NO x , x is greater than 0 and less than or equal to 2, preferably greater than or equal to 1 and less than or equal to 2), typically NO or NO forms a level in the insulating film 114 or the like. Therefore, the nitrogen oxide is located in the energy gap of the insulating film 114 and When the oxide semiconductor film 108 diffuses to the interface, the level attracts electrons on the insulating film 114 side. As a result, the trapped electrons may be trapped in the insulating film 114 and the oxide semiconductor. Since the electrons remain near the interface of the semiconductor film 108, the threshold voltage of the transistor is shifted in the positive direction. It makes me feel unwell.

[0499] Nitrogen oxide reacts with ammonia and oxygen during heat treatment. The nitrogen oxide contained therein reacts with the ammonia contained in the insulating film 116 during the heat treatment. Therefore, nitrogen oxides contained in the insulating film 114 are reduced. Electrons are less likely to be trapped at the interface with the oxide semiconductor film 108.

[0500] By using the oxide insulating film as the insulating film 114, the threshold voltage of the transistor can be reduced. It is possible to reduce the shift and the fluctuation of the electrical characteristics of the transistor. Cut.

[0501] Heat treatment in the manufacturing process of a transistor is typically performed at a temperature of 300° C. or higher and lower than 350° C. By the treatment, the insulating film 114 exhibits the following characteristics in the spectrum obtained by ESR measurement at 100K or less: The first signal has a g value of 2.037 or more and 2.039 or less, and the second signal has a g value of 2.001 or more and 2. A second signal with a g value of 1.964 or greater and a third signal with a g value of 1.966 or less. The split width of the first signal and the second signal and the The split width of the first signal and the third signal is about 5 m in the X-band ESR measurement. T. The first signal has a g value of 2.037 or more and 2.039 or less, and the second signal has a g value of 2.0 A second signal between 01 and 2.003, and a g value between 1.964 and 1.966, The total spin density of a third signal is 1×10 18 spins / cm 3 is less than , typically 1×10 17spins / cm 3 More than 1×10 18 spins / cm 3 less than is.

[0502] In addition, in the ESR spectrum below 100K, the g value is between 2.037 and 2.039. The first signal, the second signal with a g value between 2.001 and 2.003, and the g value between 1. The third signal, between 964 and 1.966, is nitrogen oxide (NO x , x is greater than 0 2 or less, preferably 1 to 2). Examples include nitrogen monoxide and nitrogen dioxide. The first signal, the second signal with a g value of 2.001 or more and 2.003 or less, and the g value of 1 The lower the sum of the spin densities of the third signals, which are between 0.964 and 1.966, This means that the oxide insulating film contains a small amount of nitrogen oxide.

[0503] The oxide insulating film has a nitrogen concentration of 6×10 as measured by SIMS. 20 atoms / cm 3 The following is the result.

[0504] The surface temperature of the membrane is between 220℃ and 350℃, and the membrane is made of PE using silane and nitrous oxide. By forming the oxide insulating film using the CVD method, a dense and hard film can be obtained. can be formed.

[0505] The insulating film 116 is an oxide insulating film containing more oxygen than the oxygen required for the stoichiometric composition. The oxide insulating film containing more oxygen than the oxygen that satisfies the stoichiometric composition is formed by heating. Heat causes some of the oxygen to be released. Acids containing more oxygen than the stoichiometric composition The oxide insulating film has a desorption amount of oxygen of 1.0 x 10 converted to oxygen atoms by TDS analysis. 19 atoms / cm 3 or more, preferably 3.0 × 10 20 atoms / cm 3 Acid that is more than The surface temperature of the film in the above TDS is 100°C or higher and 700°C or lower. °C or lower, or in the range of 100°C to 500°C.

[0506] The insulating film 116 has a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm. Silicon oxide, silicon oxynitride, etc., having a thickness of 00 nm or less can be used.

[0507] Furthermore, it is preferable that the insulating film 116 has a small number of defects. , the spin density of the signal appearing at g=2.001 due to the silicon dangling bond is 1.5×10 18 spins / cm 3 Less than, or even 1×10 18 spins / cm 3 Below Note that the insulating film 116 is preferably made of an oxide semiconductor, as compared with the insulating film 114. Since it is far from the film 108 , it may have a higher defect density than the insulating film 114 .

[0508] In addition, the insulating films 114 and 116 can be made of the same material. In some cases, the interface between the insulating film 114 and the insulating film 116 cannot be clearly confirmed. In this embodiment, the interface between the insulating film 114 and the insulating film 116 is shown by a broken line. In the embodiment, the two-layer structure of the insulating film 114 and the insulating film 116 has been described. For example, the insulating film 114 may have a single-layer structure.

[0509] The insulating film 118 contains nitrogen. The insulating film 118 also contains nitrogen and silicon. The insulating film 118 also acts as a blocking agent for oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. By providing the insulating film 118, oxygen from the oxide semiconductor film 108 can be prevented. The diffusion of oxygen from the insulating films 114 and 116 to the outside and the diffusion of oxygen from the outside The insulating film 118 can prevent hydrogen, water, etc. from entering the compound semiconductor film 108. For example, a nitride insulating film can be used for the insulating film. Silicon nitride oxide, aluminum nitride, aluminum nitride oxide, etc. Nitride insulation with blocking effect for hydrogen, water, alkali metals, alkaline earth metals, etc. Instead of the film, an oxide insulating film having a blocking effect against oxygen, hydrogen, water, etc. may be provided. As an oxide insulating film having a blocking effect against oxygen, hydrogen, water, etc., aluminum oxide is aluminum, aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, Examples include yttrium nitride oxide, hafnium oxide, and hafnium nitride oxide.

[0510] Note that various films such as the conductive film, insulating film, and oxide semiconductor film described above can be formed by sputtering. It can be formed by a method such as PECVD, but other methods such as thermal CVD (Chemical CVD) are also possible. Alternatively, the film may be formed by a thermal vapor deposition (CVD) method. As an example, MOCVD (Metal Organic Chemical Vapor Deposition) Deposition) method and ALD (Atomic Layer Deposition) ) method may also be used.

[0511] The thermal CVD method is a film formation method that does not use plasma, so defects are generated by plasma damage. This has the advantage that it will not be

[0512] In the thermal CVD method, the source gas and oxidant are simultaneously fed into the chamber, and the pressure inside the chamber is increased to atmospheric pressure. The film is formed by reacting the material near or on the substrate under reduced pressure and depositing it on the substrate. It is also possible.

[0513] In the ALD method, the chamber is kept at atmospheric pressure or reduced pressure, and the source gases for the reaction are introduced in sequence. The gas may be introduced into the next chamber, and the film may be formed by repeating this gas introduction sequence. For example, by switching between two or more types of switching valves (also called high-speed valves), The source gases are supplied to the chamber in order, and the first source gas is supplied to the chamber in order to prevent the mixture of the source gases. Simultaneously with or after the gas, an inert gas (argon, nitrogen, etc.) is introduced, and the second When an inert gas is introduced at the same time, the inert gas is used as a carrier gas. The inert gas may be introduced simultaneously with the introduction of the second source gas. Also, instead of introducing an inert gas, the first source gas is discharged by vacuum evacuation, and then A second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer. The second layer is deposited on the first layer by reacting with the second source gas introduced later. This process is repeated several times while controlling the gas introduction order until a desired thickness is achieved. By doing so, a thin film with excellent step coverage can be formed. The thickness of the thin film is determined by the order of gas introduction. The thickness can be precisely adjusted by changing the number of times the process is repeated. This is suitable for fabricating FETs with high conductivity.

[0514] Thermal CVD methods such as MOCVD and ALD can be used to form conductive films, insulating films, and oxide semiconductors in the above-described embodiments. It is possible to form various films such as conductor films and metal oxide films. For example, In-Ga-ZnO When forming a film, trimethylindium, trimethylgallium, and dimethylzinc The chemical formula of trimethylindium is In(CH3)3. The chemical formula for trimethylgallium is Ga(CH3)3. The chemical formula for dimethylzinc is , Zn(CH3)2. In addition, the combination is not limited to these, and trimethylgallium is also usable. Triethylgallium (chemical formula Ga(C2H5)3) can be used instead of gallium, Diethylzinc (chemical formula Zn(C2H5)2) can also be used instead of diethylzinc.

[0515] For example, when forming a hafnium oxide film using a film formation device that uses ALD, the solvent and Liquids containing hafnium precursor compounds (hafnium alkoxides, tetrakisdimethylamine, etc.) The raw material gas is vaporized hafnium amide (TDMAH) and oxidized Two types of gases are used: tetrakisdimethylamide hafnium (TDA) and ozone (O3). The chemical formula for nium is Hf[N(CH3)2]4. Other material liquids include tetrahydrofuran. Examples include kis(ethylmethylamido)hafnium.

[0516] For example, when forming an aluminum oxide film using a film forming apparatus that uses ALD, the solvent and a liquid containing an aluminum precursor compound (e.g., trimethylaluminum (TMA)) Two types of gases are used: a source gas containing methyltrimethylsilyl methyl ... The chemical formula for aluminum is Al(CH3)3. Other liquid materials include Tris(diisopropyl alcohol). Methylamido) aluminum, triisobutylaluminum, aluminum tris(2, 2,6,6-tetramethyl-3,5-heptanedionate).

[0517] For example, when forming a silicon oxide film using a film forming device that uses ALD, The chlorine contained in the adsorbed material is removed, and the oxidizing gas (O2 , nitrous oxide) radicals are supplied to react with the adsorbate.

[0518] For example, when forming a tungsten film using a film forming device that uses ALD, WF6 gas is used. The initial tungsten film is formed by repeatedly introducing WF6 and B2H6 gases. The tungsten film is formed using SiH gas instead of BH gas. Four gases may also be used.

[0519] For example, an oxide semiconductor film, such as an In-Ga-ZnO film, can be formed by a film formation device using ALD. When forming an In-O film, In(CH3)3 gas and O3 gas are introduced in sequence. Then, a GaO layer is formed using Ga(CH3)3 gas and O3 gas. Then, a ZnO layer is formed using Zn(CH3)2 gas and O3 gas. The order of these gases is not limited to this example. In addition, it is possible to mix these gases to form an In-Ga-O layer or an In-Zn It is also possible to form a mixed compound layer such as a Ga-Zn-O layer or a Ga-Zn-O layer. H2O gas obtained by bubbling water with an inert gas such as Ar may be used. It is preferable to use O3 gas that does not contain In(CH3)3. Alternatively, Ga(CH)3 gas may be used instead of Ga(CH). 5)3 gas may be used. Zn(CH3)2 gas may also be used.

[0520] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0521] (Embodiment 5) In this embodiment, a structure of a transistor that can be used for a display panel of one embodiment of the present invention will be described. The structure will be described with reference to FIG.

[0522] <Configuration example of semiconductor device> 21A is a top view of the transistor 100, and FIG. 21B is a top view of the transistor 100 shown in FIG. 21(A) corresponds to a cross-sectional view of the section taken along the line X1-X2 shown in FIG. 21(C). 21(A) corresponds to a cross-sectional view of the section taken along the line Y1-Y2 shown in FIG. In order to avoid complication, some of the components of the transistor 100 (gate insulator) The illustration omits the insulating film that functions as an insulating film. The channel length direction and the direction of the cutting line Y1-Y2 may be referred to as the channel width direction. In the top view of the transistor, the constituent elements are shown in the following drawings as in FIG. In some cases, some elements may be omitted from the illustration.

[0523] The transistor 100 may be used in a display panel or the like described in the first or second embodiment. It can be used.

[0524] For example, when the transistor 100 is used as the transistor MD, the substrate 102 is In the O1C, the conductive film 104 is laminated on the conductive film 504, and the insulating film 106 and the insulating film 107 are laminated. The stacked film is used as the insulating film 506, the oxide semiconductor film 108 is used as the semiconductor film 508, and the conductive film 112a to the conductive film 512A, the conductive film 112b to the conductive film 512B, and the insulating film 114 and the insulating film 1 The laminated film in which the conductive film 16 is laminated is formed as an insulating film 516, the insulating film 118 is formed as an insulating film 518, and the conductive film 12 0b can be read as the conductive film 524.

[0525] The transistor 100 includes a conductive film 104 over a substrate 102, which functions as a first gate electrode, and a an insulating film 106 on the substrate 102 and the conductive film 104; an insulating film 107 on the insulating film 106; The oxide semiconductor film 108 on the insulating film 107 and the oxide semiconductor film 108 are electrically connected to each other. The conductive film 112a serving as a source electrode and the oxide semiconductor film 108 are electrically connected to each other. the conductive film 112b serving as a drain electrode, the oxide semiconductor film 108, and the conductive film 112 a and 112b, and a conductive film 114 and 116 provided on the insulating film 116. a conductive film 120a electrically connected to the insulating film 112b, and a conductive film 120b on the insulating film 116; The insulating film 116 and the insulating film 118 on the conductive films 120a and 120b are included.

[0526] In the transistor 100, the insulating films 106 and 107 are The insulating films 114 and 116 function as gate insulating films of the transistor 100. The insulating film 118 functions as a second gate insulating film and serves as a protective insulating film for the transistor 100. In this specification and the like, the insulating films 106 and 107 are referred to as the first insulating film. The insulating film, the insulating films 114 and 116 are the second insulating film, the insulating film 118 is the third insulating film, and These may be referred to by different names.

[0527] Note that the conductive film 120b can be used as a second gate electrode of the transistor 100.

[0528] When the transistor 100 is used in a display panel, the conductive film 120a is used as a It can be used for poles, etc.

[0529] In addition, the oxide semiconductor film 108 is formed by oxidizing the conductive film 104 functioning as the first gate electrode. an oxide semiconductor film 108b and an oxide semiconductor film 108c on the oxide semiconductor film 108b; The oxide semiconductor film 108b and the oxide semiconductor film 108c contain In and M (M is A). l, Ga, Y, or Sn) and Zn.

[0530] For example, in the oxide semiconductor film 108b, a region in which the atomic ratio of In is larger than the atomic ratio of M is The oxide semiconductor film 108c preferably has the following structure: It is preferable to have a region in which the number of In atoms is smaller than that of the In atom.

[0531] The oxide semiconductor film 108b has a region in which the atomic ratio of In is higher than the atomic ratio of M. , the field effect mobility (sometimes simply referred to as mobility, or μFE) of the transistor 100 Specifically, the field effect mobility of the transistor 100 can be increased to 10 cm 2 / Vs, and more preferably the field effect mobility of the transistor 100 is greater than 30 cm 2 / Vs can be exceeded.

[0532] For example, the above-mentioned high field effect mobility transistor is connected to a gate driver that generates a gate signal. driver (especially, the demultiplexer connected to the output terminal of the shift register of the gate driver) By using it in a semiconductor device or display device with a narrow frame width (also called a narrow frame), can be provided.

[0533] On the other hand, the oxide semiconductor film 108b has a region where the atomic ratio of In is higher than the atomic ratio of M. In this case, the electrical characteristics of the transistor 100 are likely to change when irradiated with light. In the semiconductor device of one embodiment of the present invention, the oxide semiconductor film 108b is formed on the oxide semiconductor film 108c. The oxide semiconductor film 108c is thicker than the oxide semiconductor film 108b. Since the oxide semiconductor film 108b has a region where the atomic ratio of In is smaller than that of the oxide semiconductor film 108b, the oxide semiconductor film 108b has a larger Eg than that of the oxide semiconductor film 108b. Therefore, the stacked structure of the oxide semiconductor film 108b and the oxide semiconductor film 108c The oxide semiconductor film 108 having this structure can improve resistance to a negative bias stress test using light. It becomes possible.

[0534] In addition, the oxide semiconductor film 108, particularly the channel region of the oxide semiconductor film 108b, Impurities such as hydrogen and moisture are problematic because they affect transistor characteristics. Therefore, impurities such as hydrogen and moisture are present in the channel region of the oxide semiconductor film 108b. The less impurities there are, the more preferable. The oxygen vacancies caused by the oxide semiconductor are problematic because they affect the transistor characteristics. When oxygen vacancies are formed in the channel region of the film 108b, hydrogen bonds to the oxygen vacancies, forming A carrier supply source is generated in the channel region of the oxide semiconductor film 108b. As a result, the electrical characteristics of the transistor 100 including the oxide semiconductor film 108b change, typically Therefore, the threshold voltage of the oxide semiconductor film 108b is shifted. In the region, the fewer oxygen deficiencies the better.

[0535] In view of this, in one embodiment of the present invention, an insulating film in contact with the oxide semiconductor film 108, specifically, , the insulating film 107 formed under the oxide semiconductor film 108 and the insulating film 108 The insulating films 114 and 116 formed above contain excess oxygen. and oxygen or excess oxygen is transferred from the insulating films 114 and 116 to the oxide semiconductor film 108. By doing so, oxygen vacancies in the oxide semiconductor film can be reduced. The electrical characteristics of the transistor 100, particularly the fluctuation of the transistor 100 due to light irradiation, can be suppressed. It becomes possible.

[0536] In one embodiment of the present invention, the insulating film 107 and the insulating films 114 and 116 are formed using an oxygen-containing film. In order to incorporate the compound, there is no increase in the manufacturing process or the increase in the manufacturing process is extremely small. Therefore, the yield of the transistor 100 can be increased.

[0537] Specifically, in the step of forming the oxide semiconductor film 108b, a sputtering method is used. The oxide semiconductor film 108b is formed in an atmosphere containing oxygen gas. Oxygen or excess oxygen is added to the insulating film 107, which is the surface on which the film 108b is to be formed.

[0538] In addition, in the process of forming the conductive films 120a and 120b, a sputtering method is used. The conductive films 120a and 120b are formed in an atmosphere containing nitrogen gas. Oxygen or excess oxygen is added to the insulating film 116, which is the surface on which the insulating film 120b is to be formed. When oxygen or excess oxygen is added to the film 116, the insulating film 1 located below the insulating film 116 Oxygen or excess oxygen may be added to the oxide semiconductor film 14 and the oxide semiconductor film 108 in some cases.

[0539] <Oxide conductor> Next, the oxide conductor will be described. The conductive films 120a and 120b serve as protective layers that suppress the release of oxygen from the insulating films 114 and 116. The conductive films 120a and 120b function as a film. Before the step of forming the insulating film 118, the insulating film 118 functions as a semiconductor. The conductive films 120a and 120b function as conductors.

[0540] In order for the conductive films 120a and 120b to function as conductors, When oxygen vacancies are formed in b and hydrogen is added to the oxygen vacancies from the insulating film 118, As a result, the conductive films 120a and 120b become highly conductive. The conductive films 120a and 120b that have been made conductive are each called oxide conductors. Generally, oxide semiconductors have a large energy gap and are therefore resistant to visible light. On the other hand, oxide conductors are oxide semiconductors that have donor levels near the conduction band. Therefore, oxide conductors are less affected by absorption due to donor levels and are The light-transmitting property is comparable to that of an oxide semiconductor.

[0541] <Components of semiconductor device> The components included in the semiconductor device of this embodiment will be described in detail below.

[0542] The following materials may be the same as those described in the fourth embodiment. can.

[0543] The material that can be used for the substrate 102 described in the fourth embodiment is used for the substrate 102. In addition, materials that can be used for the insulating films 106 and 107 described in the fourth embodiment can be used. The insulating films 106 and 107 can be made of the same material.

[0544] Also, the gate electrode, source electrode, and drain electrode described in the fourth embodiment are formed of The materials that can be used for the conductive film are used for the first gate electrode, the source electrode, and the drain electrode. It can be used for a conductive film that functions as an electrode.

[0545] <Oxide semiconductor film> The oxide semiconductor film 108 can be formed using the above-described materials.

[0546] When the oxide semiconductor film 108b is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The atomic ratio of the metal elements in the sputtering target used for this purpose must satisfy the condition In>M. The atomic ratio of the metal elements in such a sputtering target is preferably In :M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4. 1st place etc.

[0547] In addition, when the oxide semiconductor film 108c is an In-M-Zn oxide, the In-M-Zn oxide is The atomic ratio of the metal elements in the sputtering target used for film formation satisfies In≦M. It is preferable that the atomic ratio of the metal elements in such a sputtering target is , In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1 :3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:6, In:M:Zn =1:4:5, etc.

[0548] When the oxide semiconductor film 108b and the oxide semiconductor film 108c are made of In-M-Zn oxide, In this case, the sputtering target is a target containing polycrystalline In-M-Zn oxide. It is preferable to use a target containing polycrystalline In-M-Zn oxide. Therefore, the oxide semiconductor films 108b and 108c can be easily formed with crystallinity. The atomic ratio of the oxide semiconductor film 108b to the oxide semiconductor film 108c is The error is the atomic ratio of the metal elements contained in the sputtering target. The variation is within ±40%. For example, the sputtering of the oxide semiconductor film 108b When the atomic ratio of In:Ga:Zn=4:2:4.1 is used as the target, the film is formed. When the atomic ratio of the oxide semiconductor film 108b is approximately In:Ga:Zn=4:2:3, There is a match.

[0549] The oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 e V or more, more preferably 3 eV or more. By using a compound semiconductor, the off-state current of the transistor 100 can be reduced. The oxide semiconductor film 108b has an energy gap of 2 eV or more, preferably 2 eV or more. The oxide semiconductor film 108c has an energy It is preferable to use an oxide semiconductor film having a gap of 2.5 eV or more and 3.5 eV or less. In addition, the energy gap of the oxide semiconductor film 108c is larger than that of the oxide semiconductor film 108b. It is preferable to do so.

[0550] The oxide semiconductor film 108b and the oxide semiconductor film 108c each have a thickness of 3 nm. or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, and more preferably 3 nm or less The upper limit is 50 nm or less.

[0551] As the oxide semiconductor film 108c, an oxide semiconductor film with low carrier density is used. For example, the oxide semiconductor film 108c has a carrier density of 1×10 17 pieces / cm 3 Below, I prefer Or 1 x 10 15 pieces / cm 3 or less, more preferably 1 × 10 13 pieces / cm 3 Below, More preferably 1×10 11 pieces / cm 3 The following applies.

[0552] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use an appropriate composition depending on the required properties (mobility, threshold voltage, etc.). In order to obtain semiconductor characteristics of the transistor, the oxide semiconductor film 108b and the oxide semiconductor film Carrier density, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic distance of 108c It is preferable to set the spacing, density, etc. appropriately.

[0553] Note that the oxide semiconductor films 108b and 108c each contain an impurity By using an oxide semiconductor film with low concentration and low density of defect states, the electrical properties are improved. In this case, it is preferable to fabricate a transistor having a low impurity concentration and a defect. A low density of recessed levels (low oxygen vacancies) is called high purity intrinsic or substantially high purity intrinsic. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a small number of carrier generation sources. Therefore, the carrier density can be reduced. The transistor in which the region is formed has electrical characteristics in which the threshold voltage is negative (normal Also, it is rare for the product to be highly pure intrinsic or substantially highly pure intrinsic. Since the oxide semiconductor film has a low density of defect states, the density of trap states may also be low. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a significantly low off-state current. Very small, with a channel width of 1×10 6 Even if the device has a channel length L of 10 μm, When the voltage between the source and drain electrodes (drain voltage) is in the range of 1V to 10V, The off-current is below the measurement limit of the semiconductor parameter analyzer, i.e., 1×10 -13 Below A The following characteristics can be obtained.

[0554] Therefore, the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film has a channel region. The transistors in which this region is formed have small fluctuations in electrical characteristics and are highly reliable. Note that charges trapped in the trap states of the oxide semiconductor film are lost. It takes a long time for the charge to reach a certain level, and it may behave as if it were a fixed charge. A transistor in which a channel region is formed in an oxide semiconductor film with a high density of trap states is electrically Impurities include hydrogen, nitrogen, alkali metals, and alkali metals. Examples include alkaline earth metals.

[0555] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to form water. Oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters, electrons, which act as carriers, may be generated. It can bond with oxygen atoms that bond with atomic atoms to generate electrons, which are carriers. A transistor using an oxide semiconductor film containing hydrogen tends to be normally on. Therefore, it is preferable that the amount of hydrogen in the oxide semiconductor film 108 be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor film 108 obtained by SIMS analysis is , 2 × 10 20 atoms / cm 3 Less than or equal to 5 x 10 19 atoms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Less than or equal to 5 × 10 17 atoms / cm 3 or less, more preferably 1 × 10 16 atoms / cm 3 and do.

[0556] In addition, the oxide semiconductor film 108b has a region with a lower hydrogen concentration than the oxide semiconductor film 108c. The oxide semiconductor film 108b preferably has a higher water content than the oxide semiconductor film 108c. By having a region with a low concentration of element, a highly reliable semiconductor device can be obtained.

[0557] In addition, the oxide semiconductor film 108b contains silicon or carbon, which is one of the Group 14 elements. If the oxide semiconductor film 108b is mixed with the silicon dioxide, oxygen vacancies increase in the oxide semiconductor film 108b, causing the oxide semiconductor film 108b to become n-type. Therefore, the concentrations of silicon and carbon in the oxide semiconductor film 108b and the oxide semiconductor film 108 The concentration of silicon and carbon near the interface with b (concentration obtained by SIMS analysis) is calculated as 2 × 1 0 18 atoms / cm3 Less than or equal to 2 x 10 17 atoms / cm 3 The following .

[0558] In addition, in the oxide semiconductor film 108b, alkali metal or is the concentration of alkaline earth metals, 1×10 18 atoms / cm 3 Below, preferably 2 x 1 0 16 atoms / cm 3 Alkali metals and alkaline earth metals are oxide semiconductors. When they bond with a conductor, carriers may be generated, increasing the off-state current of the transistor. Therefore, the alkali metal or alkaline earth metal in the oxide semiconductor film 108b It is preferable to reduce the concentration of metals.

[0559] When nitrogen is contained in the oxide semiconductor film 108b, electrons serving as carriers are generated, and As a result, the oxide semiconductor film containing nitrogen is easily converted to n-type. The transistor using the oxide semiconductor film tends to be normally on. In this case, it is preferable that the nitrogen content is reduced as much as possible. For example, The nitrogen concentration is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0560] The oxide semiconductor film 108b and the oxide semiconductor film 108c each have a non-single-crystal structure. The non-single crystal structure may be, for example, a CAAC-OS (C Axis Aligned Crystal) structure, which will be described later. ned Crystalline Oxide Semiconductor), polycrystalline The non-single crystalline structure includes the structure, microcrystalline structure, or amorphous structure. The defect density is high in CAAC-OS, and the defect density is lowest in CAAC-OS.

[0561] <An insulating film that functions as a second gate insulating film> The insulating films 114 and 116 function as a second gate insulating film of the transistor 100. In addition, the insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. That is, the insulating films 114 and 116 contain oxygen. The insulating film 114 is an insulating film that can be formed as an insulating film 116 to be formed later. The oxide semiconductor film 108 also functions as a film for reducing damage to the oxide semiconductor film 108 during the etching.

[0562] For example, the insulating films 114 and 116 described in the fourth embodiment are used as the insulating films 114 and 116. It is possible.

[0563] <<Oxide Semiconductor Film Functioning as a Conductive Film and Oxide Semiconductor Film Functioning as a Second Gate Electrode>> Conductive Film》 The conductive film 120a functioning as a conductive film is formed using a material similar to that of the oxide semiconductor film 108 described above. and the conductive film 120b functioning as the second gate electrode.

[0564] That is, the conductive film 120a functions as a conductive film, and the conductive film 120b functions as a second gate electrode. The conductive film 120b is formed on the oxide semiconductor film 108 (the oxide semiconductor film 108b and the oxide semiconductor film 108c) has a metal element contained in the conductive layer that functions as a second gate electrode. The oxide semiconductor film 108b and the oxide semiconductor film 108b are 8c) and 8c) have the same metal element, it is possible to reduce manufacturing costs. It becomes Noh.

[0565] For example, a conductive film 120a serving as a conductive film and a conductive film 120b serving as a second gate electrode are provided. In the case of In-M-Zn oxide, the conductive film 120b is formed by depositing In-M-Zn oxide. The atomic ratio of the metal elements in the sputtering target used for this purpose must satisfy the following condition: In≧M The atomic ratio of the metal elements in such a sputtering target is preferably In: M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 etc.

[0566] In addition, the conductive film 120a functioning as a conductive film and the conductive film 120b functioning as a second gate electrode are The structure of the film 120b can be a single layer structure or a laminated structure of two or more layers. In addition, when the conductive films 120a and 120b have a laminated structure, the above-mentioned sputtering The composition of the target is not limited.

[0567] <An insulating film that functions as a protective insulating film for transistors> The insulating film 118 functions as a protective insulating film for the transistor 100.

[0568] The insulating film 118 contains either hydrogen or nitrogen, or both. The insulating film 118 contains nitrogen and silicon. The insulating film 118 contains oxygen, hydrogen, water, and alkaline metals. The insulating film 118 has a function of blocking metals, alkaline earth metals, etc. The oxygen diffuses from the oxide semiconductor film 108 to the outside, and the oxygen contained in the insulating films 114 and 116 The diffusion of oxygen from the oxide semiconductor film 108 to the outside and the penetration of hydrogen, water, and the like into the oxide semiconductor film 108 from the outside are prevented. You can do this.

[0569] The insulating film 118 is a conductive film 120a that functions as a conductive film and a second gate electrode. a function of supplying either or both of hydrogen and nitrogen to the conductive film 120b, which functions as a In particular, the insulating film 118 contains hydrogen, and the hydrogen is absorbed by the conductive films 120a and 120b. It is preferable that the insulating film 118 has a function of supplying water to the conductive films 120a and 120b. By supplying the element, the conductive films 120a and 120b function as conductors.

[0570] For example, a nitride insulating film can be used as the insulating film 118. Examples include silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide. There is.

[0571] Note that various films such as the conductive film, insulating film, and oxide semiconductor film described above can be formed by sputtering. It can be formed by a method such as PECVD, but other methods such as thermal CVD (Chemical CVD) are also possible. Alternatively, the film may be formed by a thermal vapor deposition (CVD) method. As an example, MOCVD (Metal Organic Chemical Vapor Deposition) Deposition) method and ALD (Atomic Layer Deposition) Specifically, it can be formed by the method described in the fourth embodiment. Cut.

[0572] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0573] (Embodiment 6) In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIGS. explain.

[0574] FIG. 22 is an exploded view illustrating the configuration of the input / output device 800. As shown in FIG.

[0575] The input / output device 800 includes a display panel 806 and a display panel 806 overlapping the display panel 806. The input / output device 800 has a touch sensor 804. The input / output device 800 can be called a touch panel. do.

[0576] The input / output device 800 includes a touch sensor 804 and a drive circuit 806 for driving the display panel 806. 10, a battery 811 that supplies power to the drive circuit 810, a touch sensor 804, a display It has a housing that houses a panel 806 , a drive circuit 810 and a battery 811 .

[0577] "Touch Sensor 804" The touch sensor 804 has an area that overlaps with the display panel 806. It is electrically connected to the touch sensor 804 .

[0578] For example, the touch sensor 8 may be a resistive type, a capacitive type, or a type using a photoelectric conversion element. Can be used for 04.

[0579] The touch sensor 804 may be used as part of the display panel 806 .

[0580] Display Panel 806 For example, the display panel described in the first or second embodiment may be used as the display panel 806. The FPC 805 is electrically connected to the display panel 806.

[0581] <<Drive circuit 810>> For example, a power supply circuit, a signal processing circuit, or the like can be used as the driver circuit 810. The power may be supplied by a battery or an external commercial power source.

[0582] The signal processing circuit has a function of outputting a video signal, a clock signal, and the like.

[0583] The power supply circuit has a function of supplying a predetermined amount of power.

[0584] 《Housing》 For example, an upper cover 801, a lower cover 802 that fits with the upper cover 801, , a frame 809 housed in an area surrounded by an upper cover 801 and a lower cover 802 and can be used for the housing part.

[0585] The frame 809 has a function of protecting the display panel 806 and a function of preventing the display panel 806 from being damaged by the operation of the driving circuit 810. It has the function of blocking electromagnetic waves or acting as a heat sink.

[0586] Metal, resin, elastomer, etc. are used for the upper cover 801, the lower cover 802, or the frame. It can be used for 809.

[0587] Battery 811 The battery 811 has a function of supplying power.

[0588] It should be noted that components such as a polarizing plate, a retardation plate, and a prism sheet may be used in the input / output device 800. can.

[0589] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0590] (Embodiment 7) In this embodiment, a configuration of a data processing device of one embodiment of the present invention will be described with reference to FIGS. The explanation will be given with reference to the above.

[0591] 23A is a block diagram illustrating the configuration of the information processing device 200. 1 is a projection diagram illustrating an example of the appearance of the information processing device 200.

[0592] 24(A) is a block diagram illustrating the configuration of the display unit 230. FIG. 24(C) is a block diagram illustrating the configuration of the display unit 230B. ) is a circuit diagram for explaining the configuration of.

[0593] <Configuration example of information processing device> The information processing device 200 described in this embodiment includes a calculation device 210, an input / output device 220, and (See FIG. 23(A)).

[0594] The calculation device 210 is supplied with the position information P1, and is supplied with the image information V and the control information. It has the function to do this.

[0595] The input / output device 220 has a function of supplying position information P1, and outputs image information V and control information Supplied.

[0596] The input / output device 220 supplies the display unit 230 that displays the image information V and the position information P1. It includes an input unit 240.

[0597] The display unit 230 includes a first display element and an opening in the reflective film of the first display element. a first pixel circuit for driving the first display element; A second pixel circuit is provided to drive the second display element.

[0598] The input unit 240 detects the position of the pointer and outputs position information P1 determined based on the position. It has the function of supplying

[0599] The calculation device 210 has a function of determining the moving speed of the pointer based on the position information P1. .

[0600] The computing device 210 determines the contrast or brightness of the image information V based on the moving speed. It has the function of

[0601] The information processing device 200 described in this embodiment provides position information P1 and image information. an input / output device 220 that receives position information P1 and outputs image information V; 0, and the calculation device 210 calculates the image information based on the moving speed of the position information P1. It has the function of determining the contrast or brightness of the information V.

[0602] This reduces the strain on the user's eyes when moving the display position of image information. This allows for a display that is easy on the eyes of the user. This provides excellent visibility even in bright places such as in direct sunlight. It is possible to provide a novel information processing device with excellent reliability.

[0603] <Configuration> One aspect of the present invention includes a computing device 210 or an input / output device 220 .

[0604] 《Arithmetic unit 210》 The calculation device 210 includes a calculation unit 211 and a storage unit 212. and an input / output interface 215 (see FIG. 23(A)).

[0605] 《Calculation section 211》 The calculation unit 211 has a function of executing a program, for example. This allows for a significant reduction in power consumption. do.

[0606] 《Storage section 212》 The storage unit 212 stores, for example, a program executed by the calculation unit 211, initial information, setting information, or It has the function of storing images, etc.

[0607] Specifically, a hard disk, a flash memory, or a transistor including an oxide semiconductor A memory using the above method can be used.

[0608] Input / output interface 215, transmission path 214 The input / output interface 215 includes terminals or wiring, and is used to supply information and receive information. For example, it can be electrically connected to the transmission line 214. It can be electrically connected to the device 220 .

[0609] The transmission path 214 has wiring and functions to supply information and receive information. The calculation unit 211 can be electrically connected to the output interface 215. It can be electrically connected to the memory unit 212 or the input / output interface 215.

[0610] Input / output device 220 The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. Prepare.

[0611] 《Display section 230》 The display unit 230 includes a display area 231, a driving circuit GD, and a driving circuit SD (see FIG. 2). For example, when the display panel described in the first or second embodiment is used, This makes it possible to reduce power consumption.

[0612] The display area 231 includes one or more pixels 232(i, j) and pixels arranged in the row direction. 232(i,j) and a scanning line G(i) electrically connected to the row direction. and a signal line S(j) electrically connected to the pixel 232(i,j) on which the pixel is to be mounted. , i is an integer between 1 and m, j is an integer between 1 and n, and m and n are 1 or more. is an integer.

[0613] The pixel 232(i,j) is connected to the scanning line G1(i), the scanning line G2(i), and the signal line S(j). , and are electrically connected to the wiring ANO, the wiring VCOM1, and the wiring VCOM2 (FIG. 24(C )reference).

[0614] The scanning line G(i) includes the scanning line G1(i) and the scanning line G2(i) (see FIG. 24(A)). ) and Figure 24(B)).

[0615] The display unit can also have multiple drive circuits. For example, the display unit 230B has It may have a driving circuit GDA and a driving circuit GDB (see FIG. 24(B)).

[0616] <Drive circuit GD> The driving circuit GD has a function of supplying a selection signal based on control information.

[0617] For example, based on control information, the frequency is 30 Hz or more, preferably 60 Hz or more. This allows smooth display of moving images. It is possible.

[0618] For example, based on control information, the frequency is set to less than 30 Hz, preferably less than 1 Hz, and more preferably less than 1 minute. It has a function to supply a selection signal to one scan line at a frequency of less than once per flip-flop. A still image can be displayed with the car suppressed.

[0619] In addition, for example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal is The frequency at which the driver circuit GDB supplies the selection signal can be made different. , a still image is displayed in a flicker-suppressed state in an area where a moving image is displayed smoothly. The selection signal can be supplied at a higher frequency than the regions.

[0620] <Drive circuit SD> The driving circuit SD has a function of supplying an image signal based on image information V.

[0621] 《Pixel 232(i,j)》 The pixel 232(i,j) is a first display element 235LC and a second display element 235LC. The second display element 235EL is provided so as to overlap with the opening of the reflective film. The pixel circuit includes a pixel circuit for driving the first display element 235LC and the second display element 235EL (FIG. 24(C)). )reference).

[0622] First display element 235LC For example, a display element having a function of controlling light transmission may be used as the display element 235LC. Specifically, a polarizing plate and a liquid crystal element or a shutter-type MEMS display element can be used. etc. can be used.

[0623] Specifically, IPS (In-Plane-Switching) mode, TN (Twis ted Nematic) mode, FFS (Fringe Field Switching ng) mode, ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB (Optically Compensated Bi refringence mode, FLC (Ferroelectric Liquid Crystal Crystal) mode, AFLC (AntiFerroelectric Liquor) mode, A liquid crystal element that can be driven using a driving method such as a liquid crystal (LCD) mode It can be used.

[0624] Furthermore, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Orthogonal Alignment mode, ECB (Electrically Co ntrolled Birefringence) mode, CPA(Continuouou) mode Pinwheel Alignment mode, ASV (Advanced Su The liquid crystal element can be driven using a driving method such as a (per-View) mode. It is possible.

[0625] The first display element 235LC includes a first electrode, a second electrode, and a liquid crystal layer. The liquid crystal display device includes a liquid crystal material whose orientation can be controlled using a voltage between a first electrode and a second electrode. For example, an electric field in the thickness direction (also called the vertical direction), horizontal direction, or oblique direction of the liquid crystal layer is applied to the liquid crystal. It can be used to control the orientation of crystalline materials.

[0626] For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, etc. can be used. Cholesteric phase, smectic phase, chiral phase, etc. Liquid crystal materials that exhibit a cubic phase, a chiral nematic phase, an isotropic phase, etc. can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

[0627] Second display element 235EL For example, a display element having a function of emitting light may be used as the second display element 235EL. Specifically, an organic EL element can be used.

[0628] Specifically, an organic EL element that emits white light is used as the second display element 235EL. Alternatively, an organic EL element that emits blue light, green light, or red light can be used as a second It can be used for the display element 235EL.

[0629] 《Pixel circuit》 A function for driving the first display element 235LC and / or the second display element 235EL is provided. Such a circuit can be used in the pixel circuit.

[0630] For example, the scanning line G1(i), the scanning line G2(i), the signal line S(j), the wiring ANO, and the wiring VC It is electrically connected to OM1 and wiring VCOM2 and drives the liquid crystal element or organic EL element. The pixel circuit will be described (see FIG. 24(C)).

[0631] Also, for example, a switch, a transistor, a diode, a resistor, a capacitor, or an inductor A pixel circuit can be made of a material such as a silicon nitride film.

[0632] For example, one or more transistors can be used as switches. Multiple transistors connected in series, multiple transistors connected in series and parallel Multiple transistors connected in combination can be used in a switch.

[0633] For example, the first electrode of the first display element 235LC and the conductive film having an area overlapping the first electrode are A capacitor element may be formed using a conductive film.

[0634] For example, the pixel circuit has a gate electrode electrically connected to the scanning line G1(i), and a first electrode A transistor is electrically connected to the signal line S(j) and functions as a switch SW1. The first electrode is electrically connected to the second electrode of the transistor, and the second electrode is disposed The first display element 235LC is electrically connected to the line VCOM1. The electrode is electrically connected to the second electrode of the transistor, and the second electrode is electrically connected to the wiring VCOM1. The capacitor C1 is electrically connected to the input terminal of the capacitor.

[0635] In addition, the pixel circuit has a gate electrode electrically connected to the scanning line G2(i), and a first electrode The transistor is electrically connected to the signal line S(j) and functions as the switch SW2. The gate electrode is electrically connected to the second electrode of the transistor functioning as the switch SW2. The first electrode of the transistor M is electrically connected to the wiring ANO. The first electrode is electrically connected to the second electrode of the transistor that functions as the switch SW2. a capacitor C2 whose second electrode is electrically connected to the second electrode of the transistor M; The first electrode is electrically connected to the second electrode of the transistor M, and the second electrode The second display element 235EL has a pole electrically connected to the wiring VCOM2.

[0636] Transistor For example, a semiconductor film that can be formed in the same process can be used as a transistor for a driver circuit and a pixel circuit. It can be used for registers.

[0637] For example, a bottom gate transistor or a top gate transistor is used. It is possible.

[0638] By the way, for example, a bottom gate transistor using amorphous silicon as a semiconductor The production line for bottom-gate transistors uses oxide semiconductors as the semiconductor. It can be easily modified into a production line. The production line for this is a top-gate transistor production line that uses oxide semiconductors as the semiconductor. It can be easily converted into an inn.

[0639] For example, a transistor using a semiconductor containing a group 4 element can be used. For example, a semiconductor containing silicon can be used for the semiconductor film. , polysilicon, microcrystalline silicon, amorphous silicon, etc. are used as semiconductor films. A transistor can be used.

[0640] The temperature required to fabricate a transistor using polysilicon as a semiconductor is This is lower than that of transistors using crystalline silicon.

[0641] In addition, the field effect mobility of transistors that use polysilicon as a semiconductor is This is higher than that of transistors that use silicon as a semiconductor, which improves the aperture ratio of pixels. In addition, the pixels arranged with extremely high resolution, the gate drive circuit and the As a result, the components that make up the electronic device can be easily formed on the same substrate. The number of items can be reduced.

[0642] In addition, the reliability of transistors that use polysilicon as a semiconductor is higher than that of transistors that use amorphous silicon. It is superior to transistors used in semiconductors.

[0643] For example, a transistor including an oxide semiconductor can be used. an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc; It can be used for body membranes.

[0644] For example, the leakage current in the off state is Specifically, a transistor smaller than the semiconductor film can be used. A transistor including an oxide semiconductor can be used for the gate insulating film.

[0645] This allows the time that the pixel circuit can hold an image signal to be extended by the amorphous silicon The time that can be maintained by a pixel circuit using a transistor having a semiconductor film is longer than the time that can be maintained by a pixel circuit using a transistor having a semiconductor film. Specifically, it is possible to suppress the occurrence of flicker while keeping the selection signal at 30H. The frequency of the pulses may be less than 1 Hz, preferably less than 1 Hz, and more preferably less than once per minute. As a result, fatigue accumulated in the user of the information processing device can be reduced. The power consumption associated with driving can be reduced.

[0646] Furthermore, for example, a transistor using a compound semiconductor can be used. A semiconductor containing gallium arsenide can be used for the semiconductor film.

[0647] For example, a transistor using an organic semiconductor can be used. Organic semiconductors including cesene or graphene can be used for the semiconductor film.

[0648] Input section 240 Various human interfaces can be used for the input unit 240 (see FIG. 23 (See (A)).

[0649] For example, a keyboard, a mouse, a touch sensor, a microphone, a camera, or the like is used as the input unit 240. It is possible to use a touch sensor having an area that overlaps the display unit 230. The input / output device is provided with a display unit 230 and a touch sensor having an area overlapping the display unit 230. The force device can be called a touch panel.

[0650] For example, the user can use a finger that touches the touch panel as a pointer to perform various gestures (tabbing). You can move the cursor (click, drag, swipe or pinch in, etc.).

[0651] For example, the computing device 210 analyzes information such as the position or trajectory of a finger touching the touch panel. When the analysis result satisfies a predetermined condition, it can be assumed that a specific gesture has been provided. This allows the user to select a specific gesture that is pre-associated with the specific gesture. Operation instructions can be provided using the gestures.

[0652] For example, the user can issue a "scroll command" to change the display position of image information by tapping. The gesture can be provided by moving a finger along the touch panel. .

[0653] <Detection unit 250> The detection unit 250 has a function of detecting the surrounding conditions and acquiring information P2.

[0654] For example, cameras, acceleration sensors, direction sensors, pressure sensors, temperature sensors, humidity sensors, lighting sensors Temperature sensor or GPS (Global Positioning System) signal receiver A signal receiving circuit or the like can be used for the detection unit 250.

[0655] For example, the arithmetic unit 210 may calculate the ambient brightness detected by the illuminance sensor of the detection unit 250 based on a predetermined If the image information is judged to be sufficiently bright compared with the illuminance of the first display element 235LC, Alternatively, if it is determined that the light is dim, the image information is displayed using the first display element 235L. C and the second display element 235EL. The image information is displayed using the second display element 235EL.

[0656] Specifically, a reflective display element and / or a self-luminous display element are used to detect the surrounding brightness. For example, a liquid crystal element can be used as a reflective display element. The organic EL element can be used as a self-luminous display element.

[0657] This allows, for example, a reflective display element to be used in an environment with strong external light, and a reflective display element to be used in a dimly lit environment. Reflective display elements and self-luminous display elements are used, and the self-luminous display is used in dark environments. Image information can be displayed using the element, resulting in a display with excellent visibility. It is possible to provide a novel display panel that can reduce power consumption. It is possible to provide a novel display panel, or a novel display panel that is excellent in convenience and reliability. An information processing device can be provided.

[0658] For example, a sensor having a function of detecting the chromaticity of ambient light can be used for the detection unit 250. Specifically, a CCD camera or the like can be used. The 50 can compensate for white balance bias based on the chromaticity of the ambient light it detects.

[0659] Specifically, in the first step, the white balance imbalance of the ambient light is detected.

[0660] In the second step, the image displayed by reflecting the ambient light using the first display element is insufficient. Predict the light intensity of the color you want to see.

[0661] In a third step, the first display element is used to reflect ambient light and the second display element is used to The device emits light to compensate for the lack of colored light and displays an image.

[0662] This allows the white balance of the ambient light to be accurately reflected by the first display element and the white balance of the ambient light to be accurately reflected by the second display element. It is possible to display an image with corrected white balance using the light emitted by the display element. As a result, images with reduced power consumption or correct white balance can be captured. To provide a novel information processing device that can display information and is highly convenient or reliable. can be done.

[0663] Communications Department 290 The communication unit 290 has the function of supplying information to the network and acquiring information from the network. Prepare.

[0664] "program" 25 and 26, one embodiment of the present invention will be described. This will be used to explain.

[0665] FIG. 25A is a flowchart illustrating the main processing of a program according to one aspect of the present invention. FIG. 25(B) is a flowchart illustrating the interrupt process.

[0666] FIG. 26 is a schematic diagram illustrating a method for displaying image information on the display unit 230. As shown in FIG.

[0667] A program according to one embodiment of the present invention is a program having the following steps (see FIG. 25(A) )reference).

[0668] In the first step, the settings are initialized (see FIG. 25(A)(S1)).

[0669] For example, predetermined image information and a second mode can be used as the initial setting.

[0670] For example, a still image can be used as the predetermined image information. Alternatively, the selection signal can be 30 Hz. The first mode is a mode in which the power is supplied at a frequency of less than 1 Hz, preferably less than 1 Hz, and more preferably less than once per minute. It can be used in mode 2. For example, when displaying the time in seconds on an information processing device Alternatively, a mode in which a selection signal is supplied at a frequency of 1 Hz can be used as the second mode. Or, if the time is displayed in minutes on an information processing device, a mode that supplies the time once per minute is used. The code can be used in the second mode.

[0671] In the second step, interrupt processing is permitted (see FIG. 25(A)(S2)). The processor that is allowed to process the interrupt can process the interrupt in parallel with the main processing. The processing unit that returns to the main processing from the interrupt processing can This can be reflected in the main processing.

[0672] When the counter value is the initial value, the arithmetic unit is caused to perform an interrupt process. When returning from the program, the counter may be set to a value other than the initial value. After starting up, you can always have the interrupt process run.

[0673] In the third step, the predetermined The image information is displayed in this mode (see FIG. 25(A)(S3)).

[0674] For example, predetermined image information is displayed in the second mode based on the initial setting.

[0675] Specifically, the frequency is less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute. A mode in which a selection signal is supplied to one scanning line is used to display predetermined image information.

[0676] For example, a selection signal is supplied at time T1 to display the first image information PIC1 on the display unit 230. Also, for example, at time T2 after one second, a selection signal is supplied to select predetermined image information. Display.

[0677] Alternatively, if a predetermined event is not supplied in the interrupt process, the second mode is executed. The image information is displayed in a single mode.

[0678] For example, a selection signal is supplied at time T5 to display the fourth image information PIC4 on the display unit 230. Also, for example, one second later at time T6, a selection signal is supplied to display the same image information. The period from time T5 to time T6 is set to be the same as the period from time T1 to time T2. This can be done.

[0679] For example, in an interrupt process, when a predetermined event is supplied, the first mode is started. The specified image information is displayed in the mode.

[0680] Specifically, in interrupt processing, an event associated with the "page turn command" is If supplied, the selection signal is applied to one scan line at a frequency of at least 30 Hz, preferably at least 60 Hz. A mode that provides a signal to switch the display from one image to another. Replace.

[0681] Or, in the interrupt process, an event associated with the "scroll command" is supplied. When the scanning line is connected to the tuner, a selection signal is supplied to the scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more. A part of the first image information PIC1 that was being displayed and the subsequent image information PIC2 are displayed in the same mode. The second image information PIC2 including the part that is the subject of the image is displayed.

[0682] This allows, for example, a video in which the images change gradually in response to a "page turn command" to be displayed smoothly. Or the image can be displayed gradually according to the "scroll command". Moving images can be displayed smoothly.

[0683] Specifically, at time T3 after the event associated with the "scroll command" is supplied, A selection signal is supplied to display the second image information PIC2 whose display position etc. has been changed (see FIG. 26). Also, at time T4, a selection signal is supplied, and a third image, the display position of which is further changed, is displayed. Information PIC3 is displayed. Note that the period from time T2 to time T3, and the period from time T3 to time T The period from time T1 to time T2 and the period from time T4 to time T5 are Shorter than the interval.

[0684] In the fourth step, if a termination command is provided, the process proceeds to the fifth step. If no signal is supplied, the process proceeds to the third step (FIG. 25(A)(S4) reference).

[0685] For example, an end command can be supplied in an interrupt process.

[0686] In the fifth step, the process ends (see FIG. 25(A)(S5)).

[0687] The interrupt process comprises the following sixth to ninth steps (see FIG. 25(B)). .

[0688] In the sixth step, if a predetermined event is provided, the process proceeds to the seventh step; If the predetermined event is not provided, the process proceeds to the eighth step (FIG. 25(B) (S6 )reference).

[0689] For example, whether a specific event is supplied within a specific period can be used as a branching condition. Specifically, it is 5 seconds or less, preferably 1 second or less, more preferably 0.5 seconds or less, and further preferably Preferably, the predetermined period can be 0.1 seconds or less and greater than 0 seconds.

[0690] Furthermore, for example, an event associated with an end command can be included in the predetermined events.

[0691] In the seventh step, the mode is changed (see FIG. 25(B)(S7)). Specifically, If you have selected the first mode, select the second mode, and then select the second mode. If so, select the first mode.

[0692] In the eighth step, the interrupt process ends (see FIG. 25(B)(S8)).

[0693] 《Specified Events》 Different commands can be associated with different events.

[0694] For example, the "page turning" function is used to switch the display from one image information to another. The "remove command" moves the display position of a part of the image information displayed, and There are also "scroll commands" that display other parts of the screen.

[0695] For example, "click" and "drag" operations are performed using a pointing device such as a mouse. Events such as "tap" and "drag" are supplied to the touch panel using a finger as a pointer. Events such as "click" or "swipe" can be used.

[0696] For example, the position of the slider where the pointer is pointing, the swipe speed, the drag speed, etc. It can be used to provide arguments for the command associated with a given event.

[0697] Specifically, it determines the speed at which pages are turned when executing a "page turning command." The arguments to be used and the speed at which the display position is moved when executing the "scroll command" are determined. You can provide an argument to specify the

[0698] Also, for example, the brightness of the display may change depending on the page turning speed and / or scrolling speed. The brightness, contrast or color may be changed.

[0699] Specifically, if the page turning speed or / and scrolling speed is faster than a predetermined speed, In this case, the brightness of the display may be darkened in synchronization with the speed.

[0700] Or, if the page turning speed and / or scrolling speed is faster than a certain speed Alternatively, the contrast may be decreased in synchronization with the speed.

[0701] For example, a speed at which it is difficult for the eyes to follow the displayed image can be used as the predetermined speed. do.

[0702] In addition, the contrast is reduced by moving the bright gradation areas included in the image information closer to dark gradation. The following method can be used.

[0703] In addition, the dark gradation areas in the image information are made closer to the bright gradation areas, reducing the contrast. The following method can be used.

[0704] Specifically, if the page turning speed or / and scrolling speed is faster than a predetermined speed, In this case, the display may be synchronized with the speed and become more yellowish. The image may be displayed with a weaker blue tint.

[0705] By the way, the detection unit 250 is used to detect the usage environment of the information processing device, and the detected information is used to For example, image information may be generated based on a user-selected set of colors. The color can be selected based on the brightness of the detected environment and used as the background for the image information (Figure 1). 23(B)). This provides a suitable environment for the user of the information processing device 200. It can be provided.

[0706] In addition, the communication unit 290 receives information distributed to a specific space, and performs a process based on the received information. For example, image information may be generated based on the image data. It can be received and displayed in textbooks, or it can be distributed in conference rooms at companies, etc. It can receive and display materials.

[0707] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0708] (Embodiment 8) In this embodiment, it is possible to retain the stored contents even when power is not supplied, and writing is possible. This article explains a semiconductor device (memory device) that has no limit on the number of times it can be read, and a CPU that includes it. The CPU described in this embodiment is, for example, the information processing device described in the seventh embodiment. It can be used.

[0709] <Storage device> It is possible to retain memory contents even when power is not supplied, and there is no limit to the number of times it can be written. An example of a semiconductor device (memory device) is shown in FIG. 27. Note that FIG. 27(B) is a circuit diagram of FIG. 27(A). This is shown in the circuit diagram.

[0710] The semiconductor device shown in FIGS. 27A and 27B includes a transistor 3 using a first semiconductor material. 200 and a transistor 3300 using a second semiconductor material, and a capacitor element 3400. is doing.

[0711] The first semiconductor material and the second semiconductor material have different energy gaps. For example, the first semiconductor material is preferably a semiconductor material other than an oxide semiconductor (silicon (strained) (including silicon), germanium, silicon germanium, silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride, organic semiconductors, etc.) The semiconductor material of 2 can be an oxide semiconductor. Transistors using crystalline silicon or the like can easily operate at high speed. A transistor using such a material has a low off-state current.

[0712] The transistor 3300 is a transistor in which a channel is formed in a semiconductor layer including an oxide semiconductor. The transistor 3300 has a small off-state current, so that This means that the memory contents can be retained for a longer period of time without requiring a refresh operation. Alternatively, the semiconductor memory device may be one in which the frequency of refresh operations is extremely low. This makes it possible to sufficiently reduce power consumption.

[0713] In FIG. 27B, a first wiring 3001 is electrically connected to a source electrode of a transistor 3200. The second wiring 3002 is electrically connected to the drain electrode of the transistor 3200. The third wiring 3003 is connected to the source electrode or drain of the transistor 3300. The fourth wiring 3004 is electrically connected to one of the drain electrodes of the transistor 3300. The gate electrode of the transistor 3200 is electrically connected to the The other of the source electrode and the drain electrode of the transistor 3300 is connected to the capacitor 3400. The fifth wiring 3005 is electrically connected to one of the electrodes of the capacitor 3400. are electrically connected.

[0714] In the semiconductor device shown in FIG. 27A, the potential of the gate electrode of the transistor 3200 can be held. By taking advantage of this feature, it is possible to write, store, and read information as follows: do.

[0715] Writing and holding of information will be described. First, the potential of the fourth wiring 3004 is changed by a transistor. The transistor 3300 is turned on by applying a potential to the transistor 3300. As a result, the potential of the third wiring 3003 is applied to the gate electrode of the transistor 3200 and and the capacitance element 3400. That is, the gate electrode of the transistor 3200 is A predetermined charge is applied (write). Here, the charge that gives two different potential levels is (hereinafter referred to as Low level charge and High level charge) After that, the potential of the fourth wiring 3004 is set to a potential at which the transistor 3300 is turned off. By turning off the transistor 3300, the gate of the transistor 3200 The charge applied to the port electrode is retained (retention).

[0716] Since the off-state current of the transistor 3300 is extremely small, the gate voltage of the transistor 3200 The charge on the pole is maintained for a long period of time.

[0717] Next, reading of information will be described. A predetermined potential (constant potential) is applied to the first wiring 3001. In this state, when an appropriate potential (read potential) is applied to the fifth wiring 3005, the transistor The second wiring 3002 is at a different potential depending on the amount of charge held in the gate electrode of the capacitor 3200. In general, if the transistor 3200 is an n-channel type, then the transistor 3200 The apparent threshold voltage Vth_H when a high level charge is applied to the gate electrode of is seen when a low level charge is applied to the gate electrode of transistor 3200. This is because the apparent threshold voltage is lower than the apparent threshold voltage Vth_L. The potential of the fifth wiring 3005 required to turn on the transistor 3200 is Therefore, the potential of the fifth wiring 3005 is set to a value between Vth_H and Vth_L. By setting the potential V0, the charge given to the gate electrode of the transistor 3200 is determined. For example, if a high level charge is applied during writing, When the potential of the wiring 3005 of the fifth line becomes V0 (>Vth_H), the transistor 3200 becomes "ON" When a low level charge is applied, the voltage of the fifth wiring 3005 is Even if the potential becomes V0 (< Vth_L), the transistor 3200 remains in the "off state". Therefore, the stored information can be read by determining the potential of the second wiring 3002.

[0718] When the memory cells are arranged and used in an array, it is necessary to be able to read only the information of the desired memory cell. For example, in a memory cell from which information is not read, a potential such that the transistor 3200 becomes in the "off state" regardless of the potential applied to the gate electrode, that is, a potential smaller than Vth_H is applied to the fifth wiring 3005, so that only the information of the desired memory cell can be read. Alternatively, in a memory cell from which information is not read, a potential such that the transistor 3200 becomes in the "on state" regardless of the potential applied to the gate electrode, that is, a potential larger than Vth_L is applied to the fifth wiring 3005, so that only the information of the desired memory cell can be read.

[0719] The semiconductor device shown in FIG. 27(C) is different from FIG. 27(A) in that the transistor 3200 is not provided. Also in this case, the writing and holding operations of information are possible by the same operation as described above. [[ID=2J]]

[0720] [[ID=3A]]Next, the reading of information of the semiconductor device shown in FIG. 27(C) will be described. When the transistor 3300 is turned on, the floating third wiring 3003 and the capacitor element 3400 are conductive, and charge is redistributed between the third wiring 3003 and the capacitor element 3400. As a result, the potential of the third wiring 3003 changes. The amount of change in the potential of the third wiring [[ID=3J]] 3003 depends on the capacitance element ​​​​​​​​The potential of one of the electrodes of the capacitor 3400 (or the charge stored in the capacitor 3400) It takes different values.

[0721] For example, the potential of one electrode of the capacitor 3400 is V, the capacitance of the capacitor 3400 is C, and the third The capacitance component of the third wiring 3003 before the charge is redistributed is CB. If the potential is VB0, the potential of the third wiring 3003 after the charge is redistributed is (CB× VB0+C×V) / (CB+C). Therefore, the state of the memory cell is If the potential of one of the electrodes 400 takes two states, V1 and V0 (V1>V0), then the potential V The potential of the third wiring 3003 when 1 is held (=(CB×VB0+C×V1) / ( CB+C) is the potential of the third wiring 3003 when the potential V0 is maintained (=(CB× VB0+C×V0) / (CB+C)).

[0722] Then, the potential of the third wiring 3003 is compared with a predetermined potential, thereby reading out information. can be done.

[0723] In this case, the first semiconductor material is applied to a drive circuit for driving the memory cell. A transistor is used, and a transistor in which a second semiconductor material is applied as the transistor 3300 is used. The transistor may be stacked on the driver circuit.

[0724] In the semiconductor device described in this embodiment, an oxide semiconductor is used in the channel formation region. By using extremely small transistors, memory contents can be retained for an extremely long period of time. In other words, the refresh operation becomes unnecessary or the refresh operation is This allows the frequency of operations to be reduced significantly, resulting in a significant reduction in power consumption. In addition, when there is no power supply (however, it is desirable that the potential is fixed), However, it is possible to retain the stored contents for a long period of time.

[0725] Furthermore, the semiconductor device described in this embodiment mode does not require a high voltage for writing data. There is no problem of degradation of the capacitor. For example, unlike conventional non-volatile memory, the floating gate There is no need to inject electrons into the floating gate or extract electrons from the floating gate. The problem of deterioration of the gate insulating film does not occur at all. The device does not have the limit on the number of times it can be rewritten, which is a problem with conventional non-volatile memory, and Furthermore, the on / off state of the transistor determines the amount of information Since writing is performed, high speed operation can be easily achieved.

[0726] The above storage device may be implemented, for example, by a CPU (Central Processing Unit). In addition to the DSP (Digital Signal Processor), LSI, PLD (Programmable Logic Device) etc. I, RF-ID (Radio Frequency Identification) can also be applied.

[0727] <cpu> A CPU including the above storage device will be described below.

[0728] FIG. 28 is a block diagram showing an example of the configuration of a CPU including the above storage device.

[0729] The CPU shown in FIG. 28 includes an ALU 1191 (ALU: Arithmetic) on a board 1190. ic logic unit, arithmetic circuit), ALU controller 1192, instruction tion decoder 1193, interrupt controller 1194, timing controller 1195, register 1196, register controller 1197, bus interface 1 198 (Bus I / F), rewritable ROM 1199, and ROM interface The substrate 1190 is a semiconductor substrate, an SOI substrate, or the like. The ROM 1199 and the ROM interface 1189 are separately Of course, the CPU shown in FIG. 28 is a simplified version of the configuration. This is just one example, and actual CPUs have a wide variety of configurations depending on their uses. For example, The configuration including the CPU or arithmetic circuit shown in FIG. 28 is regarded as one core, and includes multiple such cores, The CPU may be configured so that each core operates in parallel. The number of bits that can be handled by the data bus is, for example, 8 bits, 16 bits, 32 bits, and 64 bits. It can be something like this.

[0730] The instructions input to the CPU via the bus interface 1198 are After being input to the decoder 1193 and decoded, the ALU controller 1192 Rupture controller 1194, register controller 1197, timing controller It is entered into 1195.

[0731] ALU controller 1192, interrupt controller 1194, register controller The timing controller 1197 and the timing controller 1195 control various Specifically, the ALU controller 1192 controls the operation of the ALU 1191. The interrupt controller 1194 also generates signals for the CPU program. During system execution, interrupt requests from external I / O devices and peripheral circuits are handled according to their priority and mask. The register controller 1197 determines the address of the register 1196 and processes it. It generates a response and reads or writes to register 1196 depending on the state of the CPU.

[0732] The timing controller 1195 controls the ALU 1191 and the ALU controller 119 2, an instruction decoder 1193, an interrupt controller 1194, and It generates a signal that controls the timing of the operation of the register controller 1197. The timing controller 1195 generates an internal clock signal based on the reference clock signal. It is provided with an internal clock generating section, which supplies an internal clock signal to the various circuits mentioned above.

[0733] In the CPU shown in FIG. 28, a register 1196 is provided with a memory cell.

[0734] In the CPU shown in FIG. 28, the register controller 1197 receives the data from the ALU 1191. According to the instruction, the holding operation is selected in register 1196. In the memory cell of 96, data is held by a flip-flop or a capacitance Select whether to hold data by the element. When selected, the power supply voltage is applied to the memory cells in the register 1196. If data retention in the capacitor is selected, rewriting data to the capacitor This allows the supply of power supply voltage to the memory cells in the register 1196 to be stopped. .

[0735] FIG. 29 is an example of a circuit diagram of a storage element that can be used as the register 1196. The memory element 1200 includes a circuit 1201 in which stored data is volatilized when the power is cut off, and a circuit 1202 in which stored data is volatilized when the power is cut off. A non-volatile circuit 1202, a switch 1203, a switch 1204, and a logic element The circuit includes a transistor 1206, a capacitor 1207, and a circuit 1220 having a selection function. 1202 includes a capacitor element 1208, a transistor 1209, a transistor 1210, The memory element 1200 may include a diode, a resistor, an inductor, etc., as needed. It may further include other elements such as a capacitor.

[0736] Here, the above-described memory device can be used for the circuit 1202. When the supply of power supply voltage to the The ground potential (0V) or the potential at which the transistor 1209 is turned off is continuously input. For example, if the gate of the transistor 1209 is grounded via a load such as a resistor, do.

[0737] The switch 1203 uses a transistor 1213 of one conductivity type (for example, n-channel type). The switch 1204 is configured as a transistor of a conductivity type opposite to the one conductivity type (for example, a p-channel type). An example using a transistor 1214 is shown. Here, the first terminal of the switch 1203 The input corresponds to one of the source and drain of the transistor 1213, and the second input of the switch 1203. The terminal of corresponds to the other of the source and drain of the transistor 1213, and the switch 1203 A control signal RD input to the gate of the transistor 1213 switches the first terminal and the second terminal Conduction or non-conduction between the terminals (i.e., the on or off state of transistor 1213) The first terminal of the switch 1204 is connected to the source and drain of the transistor 1214. The second terminal of the switch 1204 corresponds to one of the inputs, and the second terminal of the switch 1204 corresponds to the source of the transistor 1214. The other drain of the switch 1204 is connected to the gate of the transistor 1214. The control signal RD determines whether conduction or non-conduction (i.e., traction) occurs between the first and second terminals. The on or off state of transistor 1214 is selected.

[0738] One of the source and drain of the transistor 1209 is connected to a pair of electrodes of the capacitor 1208. The connecting portion is electrically connected to one of the gate electrodes of the transistor 1210 and the gate of the transistor 1210. One of the source and drain of the transistor 1210 is connected to a low power supply potential. The other is electrically connected to a wiring (for example, a GND line) that can supply a voltage to the switch 1. 203 (one of the source and drain of the transistor 1213) The second terminal of the switch 1203 (as well as the source and drain of the transistor 1213) The first terminal of the switch 1204 (one of the source and drain terminals of the transistor 1214) ) is electrically connected to the second terminal of the switch 1204 (the source of the transistor 1214). The other of the source and drain is electrically connected to the wiring that can supply the power supply potential VDD. The second terminal of the switch 1203 (the other of the source and drain of the transistor 1213) and the first terminal of the switch 1204 (one of the source and drain of the transistor 1214). The input terminal of the logic element 1206 and one of the pair of electrodes of the capacitor 1207 are Here, the connection point is referred to as node M1. The other of the electrodes may be configured to have a constant potential input thereto. For example, A potential (GND, etc.) or a high power supply potential (VDD, etc.) can be input. The other of the pair of electrodes of the capacitor 1207 is connected to a wiring that can supply a low power supply potential. The other of the pair of electrodes of the capacitor 1208 is electrically connected to the other of the pair of electrodes (for example, a GND line). For example, a low power supply potential (GND, etc.) can be input to the Alternatively, a high power supply potential (such as VDD) can be input. The other of the pair of electrodes is a wiring that can supply a low power supply potential (for example, a GND line ) is electrically connected to

[0739] The capacitors 1207 and 1208 are formed by accumulating parasitic capacitances of transistors and wirings. It is possible to omit it by using it sparingly.

[0740] A control signal WE is input to the first gate (first gate electrode) of the transistor 1209. The switches 1203 and 1204 are controlled by a control signal RD that is different from the control signal WE. Therefore, a conductive state or a non-conductive state between the first terminal and the second terminal is selected, and one of the switches When the first terminal and the second terminal of one switch are in a conductive state, the first terminal and the second terminal of the other switch are in a conductive state. There is no conduction between the terminals.

[0741] The other of the source and drain of the transistor 1209 is connected to a data line held in the circuit 1201. In FIG. 29, the signal output from the circuit 1201 is The example shown is input to the other of the source and drain of the switch 1203. The signal output from the second terminal (the other of the source and drain of the transistor 1213) is The logic value is inverted by the logic element 1206 to become an inverted signal, and is output via the circuit 1220. and input to the circuit 1201.

[0742] In FIG. 29, the second terminal of the switch 1203 (the source and drain of the transistor 1213) The signal output from the other of the two trains is passed through logic element 1206 and circuit 1220 to the circuit 1201 is shown as an example, but is not limited to this. The signal output from the other of the source and drain of the transistor 1213 is inverted. For example, the input If there is a node that holds a signal whose logical value is the inverted value of the signal input from the input terminal, , the second terminal of the switch 1203 (the other of the source and drain of the transistor 1213) A signal output from the node can be input to the node.

[0743] In addition, in FIG. 29, among the transistors used in the memory element 1200, The transistors other than the transistor 1209 are formed by a layer or a substrate 119 made of a semiconductor other than an oxide semiconductor. For example, a transistor with a channel formed in a silicon layer or The transistor may have a channel formed in a silicon substrate. All the transistors used in 1200 are transistors whose channels are formed of oxide semiconductor films. Alternatively, the memory element 1200 may be implemented by any other element than the transistor 1209. The other transistors may include a transistor in which a channel is formed using an oxide semiconductor film. The transistor has a channel formed in a layer or substrate 1190 made of a semiconductor other than an oxide semiconductor. The transistor may also be a transistor that is connected to the gate of the transistor.

[0744] The circuit 1201 in FIG. 29 can be, for example, a flip-flop circuit. The logic element 1206 may be, for example, an inverter or a clocked inverter. It is possible.

[0745] In the semiconductor device described in this embodiment, while a power supply voltage is not supplied to the memory element 1200, The data stored in the circuit 1201 is transferred to a capacitor 1208 provided in the circuit 1202. Therefore, it can be retained.

[0746] Further, a transistor in which a channel is formed in an oxide semiconductor film has an extremely small off-state current. For example, the off-state current of a transistor in which a channel is formed in an oxide semiconductor film is The off-state current is significantly lower than that of a transistor whose channel is formed in silicon. Therefore, a transistor in which a channel is formed in an oxide semiconductor film is used as the transistor 1209. By using the capacitor element 1200 as a power supply, the capacitor element 120 The signal held in the storage element 1200 is maintained for a long period of time. It is possible to retain the stored contents (data) even when the supply of power is stopped.

[0747] In addition, by providing the switches 1203 and 1204, the precharge operation Since this is a memory element characterized by performing the above, after the supply of power supply voltage is resumed, the circuit 1201 is restored to its original state. This can shorten the time it takes to re-store the data.

[0748] In the circuit 1202, the signal held by the capacitor 1208 is Therefore, the supply of the power supply voltage to the memory element 1200 is resumed. After that, the signal held by the capacitor element 1208 is transferred to the state ( The state can be converted to an ON state or an OFF state and read out from the circuit 1202. Therefore, even if the potential corresponding to the signal held in the capacitor element 1208 fluctuates slightly, the original signal can be accurately read out.

[0749] Such a storage element 1200 may be used as a register or cache memory of a processor. By using it in a storage device, it is possible to prevent the loss of data in the storage device due to a power supply interruption. In addition, after the supply of power voltage is resumed, the state before the power supply was stopped can be restored in a short time. Therefore, the entire processor, or one or more components of the processor, can stop power supply for a short time in multiple logic circuits, reducing power consumption. It can be suppressed.

[0750] In this embodiment, the storage element 1200 is used as a CPU. The element 1200 is a DSP (Digital Signal Processor), LSI, PLD (Programmable Logic Device) etc. I, RF-ID (Radio Frequency Identification) can also be applied.

[0751] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0752] (Embodiment 9) In this embodiment, a display module and an electronic device including a display panel of one embodiment of the present invention will be described. This will be explained with reference to FIG.

[0753] 30(A) to 30(G) are diagrams showing electronic devices. These electronic devices are 5000, display unit 5001, speaker 5003, LED lamp 5004, operation key 500 5 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( , displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, Sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or one that includes a function for measuring infrared rays), a microphone 5008, etc. Cut.

[0754] FIG. 30(A) shows a mobile computer, which includes, in addition to the above, a switch 5009, It may have an infrared port 5010, etc. FIG. 30(B) shows a portable device equipped with a recording medium. A type of image reproducing device (for example, a DVD reproducing device), which, in addition to the above, also has a second display 30(C) shows a GOG In addition to the above, the display includes a second display unit 5002, a support unit 5012, The game machine may have earphones 5013, etc. FIG. 30(D) shows a portable game machine. In addition to the above, it may have a recording medium reading unit 5011, etc. It is a digital camera with a TV receiving function, and in addition to the above, it has an antenna 5014, a shutter The mobile phone may have a trigger button 5015, an image receiving unit 5016, etc. In addition to the above, it is a type gaming machine that includes a second display unit 5002, a recording medium reading unit 5011, FIG. 30(G) shows a portable television receiver, which can be used with the above-mentioned In addition, it may have a charger 5017 capable of transmitting and receiving signals, etc.

[0755] The electronic devices shown in Figures 30(A) to 30(G) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program The function of controlling processing by the program, wireless communication function, and various computer Functions for connecting to computer networks, and for transmitting or receiving various data using wireless communication functions. The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. Furthermore, in an electronic device having a plurality of display units, One display unit mainly displays image information, and the other display unit mainly displays text information. The function to display images that take into account parallax on multiple displays to create a three-dimensional image. Furthermore, in electronic devices having an image receiving unit, It has the functions of taking still images, taking videos, and correcting the captured images automatically or manually. function to save the captured images to a recording medium (external or built-in to the camera); It can have a function of displaying an image on a display unit, etc. The functions that the electronic device shown in (G) can have are not limited to these, and it can have various functions. It is possible.

[0756] FIG. 30(H) shows a smartwatch, which includes a housing 7302, a display panel 7304, and an operation button. Includes: Tan 7311, 7312, connecting terminal 7313, band 7321, clasp 7322, etc. do.

[0757] A display panel 7304 mounted on a housing 7302 that also serves as a bezel has a non-rectangular display area. The display panel 7304 may have a rectangular display area. The display panel 7304 displays an icon 7305 representing the time, other icons 7306, etc. It can be shown.

[0758] The smartwatch shown in FIG. 30(H) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (programs) It has the functions of controlling processing by RAM, wireless communication functions, and various computers using wireless communication functions. Functions for connecting to computer networks, sending or receiving various data using wireless communication functions The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. It may have the function of:

[0759] In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity) Degrees, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, electricity Includes functions to measure pressure, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared. The smartwatch may have a light-emitting element, a microphone, etc. The display panel 7304 can be manufactured by using the same.

[0760] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. . [Example]

[0761] In this example, a manufactured display panel of one embodiment of the present invention will be described with reference to FIGS. .

[0762] Figure 31 shows photographs for explaining the display state of the manufactured display panel. 31(A-3) and 31(C) are diagrams illustrating the display quality when the first display element is used. 31(B-1) to 31(B-3) are photographs showing the second display element. 10 is a photograph for explaining the display quality in this case.

[0763] The characteristics of the manufactured display panel are shown in the following table.

[0764] [Table 1]

[0765] The manufactured display panel according to one embodiment of the present invention has a field-effect birefringence (ECB) Reflection liquid crystal display using the (fully controlled birefringence) mode A liquid crystal element was used as the first display element. An organic EL element that emitted white light was used as the second display element. It was used in a display element.

[0766] The manufactured display panel has an area overlapping the first display element and the second display element. The liquid crystal display device had a colored layer, and full color display was achieved using light transmitted through the colored layer.

[0767] "evaluation" The first display element was used in a bright room illuminated by fluorescent lights (see FIG. 31). (See Figure 31(A-1), Figure 31(A-2) and Figure 31(A-3)). As a result, a good full-color image could be displayed.

[0768] Moreover, the first display element was used outdoors on a clear day (see FIG. 31(C)). Reflective liquid crystal elements are used to display good full-color images even under strong external light. I was able to do this.

[0769] In a dark place, the second display element was used for display (FIG. 31(B-1), FIG. 31(B-2) ) and Figure 31(B-3). Displaying good full-color images using organic EL elements. I was able to do it.

[0770] For example, in this specification, when it is explicitly stated that X and Y are connected, In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected is also considered to be disclosed in this specification. Therefore, the present invention is not limited to the predetermined connection relationships, for example, the connection relationships shown in the drawings or text. Connections other than those shown in the drawings or text are also treated as if they were described in the drawings or text. do.

[0771] Here, X and Y are the object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.). , etc.).

[0772] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When no external device (such as a diode, display element, light-emitting element, or load) is connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0773] An example of an electrical connection between X and Y is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more devices (such as diodes, display elements, light-emitting elements, and loads) can be connected between X and Y. It is possible. The switch has a function to control on / off. A switch can be in a conducting state (ON state) or a non-conducting state (OFF state), allowing current to flow. The switch has the function of controlling whether or not the current flows. When X and Y are electrically connected, This includes the case where Y is directly connected.

[0774] An example of a functional connection between X and Y is a function that allows the functional connection between X and Y. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (voltage power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the signal potential level, etc.) , voltage source, current source, switching circuit, amplifier circuit (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (e.g., memory circuits, control circuits, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X If X is transmitted to Y, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there is a direct connection between X and Y and a direct connection between X and Y. This also includes the case where the and are electrically connected.

[0775] In addition, if it is explicitly stated that X and Y are electrically connected, are electrically connected (i.e., there is another element or circuit between X and Y) X and Y are functionally connected (i.e., X and Y are functionally connected) and (When there is a functional connection between them via another circuit) and when X and Y are directly connected (i.e., when X and Y are connected without any other element or circuit between them) is considered to be disclosed in the present specification. If it is explicitly stated that it is connected, The same content is considered to be disclosed in the present specification.

[0776] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or (not shown), electrically connected to X, and the drain (or second terminal, etc.) of the transistor is connected to Z 2 (or not), and is electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0777] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor" The terminals of the transistor (or the first terminal) are electrically connected to each other. 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y. It can be expressed as "connected to the source (or the first The first terminal of the transistor is electrically connected to X, and the drain of the transistor is electrically connected to the second terminal of the transistor. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of the transistor. and the drain (or second terminal, etc.) are electrically connected to Y, and X, the source (or first terminal, etc.) of a transistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this order of connection. By specifying the order of connections in the circuit configuration using a simple expression method, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined by the above.

[0778] Alternatively, for example, "the source (or first terminal, etc.) of a transistor" is electrically connected to X through at least a first connection path, and the first connection path is , and the second connection path is a transistor through a transistor. The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the first and second transistors. The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. the third connection path does not have the second connection path, and the third connection path The connection path is the path via Z2. The source (or first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and electrically connected to X, and the first connection path does not have a second connection path; The second connection path has a connection path through a transistor, and (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1. The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , does not have a fourth electrical path, and the fourth electrical path is (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguishing between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0779] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0780] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are different, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film functions as both the wiring and the electrode. Therefore, the electrode in this specification has the functions of both components. The term "electromagnetic connection" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above. [Explanation of symbols]

[0781] ACF1 conductive material ACF2 conductive material AF1 alignment film AF2 alignment film ANO wiring C1 Capacitor element C2 Capacitor element CF1 colored film CF2 colored film CP conductive material CS wiring G scan line G1 scan line G2 scan line GD drive circuit SD drive circuit GDA drive circuit GDB driver circuit KB1 structure KB2 structure KB3 structure M transistor MB Transistor MD transistor MDB transistor M1 node M2 node P1 Location information P2 Information SW1 switch SW2 switch T1 time T2 time T3 time T4 time T5 time T6 time V Image Information V0 potential V1 potential VCOM1 wiring VCOM2 wiring VDD power supply potential FPC1 Flexible Printed Circuit Board FPC2 flexible printed circuit board PIC1 Image Information PIC2 Image Information PIC3 Image Information PIC4 Image Information 100 transistors 102 Circuit Board 104 Conductive film 106 insulating film 107 Insulating film 108 Oxide semiconductor film 108a Oxide semiconductor film 108b Oxide semiconductor film 108c Oxide semiconductor film 112a Conductive film 112b Conductive film 114 insulating film 116 Insulating film 118 insulating film 120a Conductive film 120b Conductive film 200 Information processing device 210 Arithmetic equipment 211 Arithmetic section 212 Storage section 214 Transmission Line 215 Input / Output Interface 220 Input / Output Devices 230 Display section 230B Display section 231 Display area 232 pixels 235EL display element 235LC display element 240 Input section 250 detection unit 290 Communications Department 501A Insulating film 501B insulating film 501C insulating film 501D insulating film 504 Conductive film 504C connection 505 Bonding layer 506 Insulating film 508 Semiconductor film 510 board 510W peeling film 511 Wiring 512A Conductive film 512B Conductive film 516 Insulating film 518 Insulating film 520 Functional Layer 519 terminal 519B terminal 519D Terminal 520D Functional Layer 521A Insulating film 521B insulating film 524 Conductive film 528 Insulating film 550 display element 550B display element 551 Conductive film 552 Conductive film 553 Layer containing luminescent organic compounds 553B Layer containing luminescent organic compound 570 PCB 570B insulating film 591 Connection 592 Connection 593 Connection 700 display panel 700B Display Panel 700C Display Panel 700D display panel 700E display panel 700F display panel 702 pixels 704 Conductive film 704C Connection 705 Encapsulating material 719 terminal 730 pixel circuit 750 display element 751 Conductive film 751T conductive film 751H opening 752 Conductive film 752C conductive film 753 Layer containing liquid crystal material 753T Layer containing electronic ink 770 PCB 770P optical film 771 Insulating Film 800 I / O devices 801 Top cover 802 Lower cover 803 FPC 804 Touch Sensor 805 FPC 806 Display Panel 809 frames 810 Drive circuit 811 Battery 1189 ROM interface 1190 PCB 1191 ALU 1192 ALU controller 1193 Instruction Decoder 1194 Interrupt Controller 1195 Timing Controller 1196 registers 1197 Register Controller 1198 Bus Interface 1199 ROM 1200 memory elements 1201 Circuit 1202 Circuit 1203 Switch 1204 Switch 1206 Logic Elements 1207 Capacitor element 1208 Capacitor 1209 Transistor 1210 transistor 1213 Transistor 1214 transistor 1220 circuits 3001 Wiring 3002 Wiring 3003 Wiring 3004 Wiring 3005 Wiring 3200 transistors 3300 transistors 3400 Capacitor 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 7302 Housing 7304 Display Panel 7305 Icon 7306 Icons 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Clasp< / cpu>

Claims

[Claim 1] a pixel and a terminal; The pixel is a first insulating film; a first connection portion disposed in a first opening of the first insulating film; a pixel circuit electrically connected to the first connection portion; a second connection portion electrically connected to the pixel circuit; a first display element electrically connected to the first connection portion; a second display element electrically connected to the second connection portion, The first insulating film is a region sandwiched between the first display element and the second display element; The first display element is a reflective film having a function of reflecting incident light and a second opening; a function for controlling the intensity of reflected light; The second display element is a region overlapping the second opening, The region overlapping with the second opening has a function of emitting light toward the second opening. the terminal is electrically connected to the pixel circuit, A display panel, wherein the terminal has a surface that can function as a contact point.

Images