Multi-charged particle beam device

Abstract

To provide a multi-charged particle beam apparatus that can obtain a sufficient amount of beam deflection. [Solution] The multi-charged particle beam apparatus of the embodiment includes an emission unit that emits a charged particle beam; a first substrate having a plurality of first apertures through which a portion of the charged particle beam passes, thereby forming a multi-charged particle beam; a plurality of second apertures through which the multi-charged particle beam passes; a plurality of electrode pairs provided at each of the plurality of second apertures; an electric field generator that generates an electric field by applying a voltage to the electrode pairs; a magnetic field generator that generates a magnetic field parallel to the optical axis of the multi-charged particle beam with respect to the multi-charged particle beam that has passed through the plurality of second apertures; and a second substrate having a third aperture at the focal plane of the charged particle beam downstream of the magnetic field generator, which allows the multi-charged particle beam to pass through or be blocked.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to a multi-charged particle beam apparatus. [Background technology]

[0002] Charged particle beam devices, particularly those using electron beams, are used as mask and wafer drawing devices in lithography.

[0003] Furthermore, charged particle beam systems are also used as microscopes for observing the surface shape of materials, such as scanning electron microscopes and helium ion microscopes. In addition, these microscopic functions of charged particle beam systems are utilized as defect inspection equipment to observe defects occurring in semiconductor wafer products, masks used in semiconductors, liquid crystal displays, and the like.

[0004] Conventionally, the above-mentioned charged particle beam apparatus uses a single beam, which offers good accuracy but suffers from the drawback of being time-consuming. Recently, multi-beam apparatuses capable of using multiple beams have come into use to improve speed. In such multi-beam apparatuses, for example, a method has been proposed in which multiple beams are formed by passing an electron beam emitted from an electron gun through a shaping aperture. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2000-252198 [Patent Document 2] Patent No. 5675249 [Non-patent literature]

[0006] [Non-Patent Document 1] H. Yasuda et.al.: Jpn. J. Appl. Phys. 32 (1993) 6012. [Non-Patent Document 2] Fraunhofer Achievements and Results Annual Report 2015. [Non-Patent Document 3] Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 5, 469-495 (1987) [Overview of the project] [Problems that the invention aims to solve]

[0007] The problem that this invention aims to solve is to provide a multi-charged particle beam apparatus that can obtain a sufficient amount of beam deflection. [Means for solving the problem]

[0008] The multi-charged particle beam apparatus of the embodiment includes an emission unit that emits a charged particle beam; a first substrate having a plurality of first apertures through which a portion of the charged particle beam passes, thereby forming a multi-charged particle beam; a plurality of second apertures through which the multi-charged particle beam passes; a plurality of electrode pairs provided at each of the plurality of second apertures; an electric field generator that generates an electric field by applying a voltage to the electrode pairs; a magnetic field generator that generates a magnetic field parallel to the optical axis of the multi-charged particle beam with respect to the multi-charged particle beam that has passed through the plurality of second apertures; and a second substrate having a third aperture at the focal plane of the charged particle beam downstream of the magnetic field generator, which allows the multi-charged particle beam to pass through or be blocked. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic cross-sectional view of a multi-electron beam lithography apparatus according to the first embodiment. [Figure 2] This is a schematic diagram illustrating the principle of the blanking aperture array of the first embodiment. [Figure 3]It is a schematic diagram showing an example of a top view of a blanking aperture array. [Figure 4] It is a schematic cross-sectional view taken along the line A-A' of the blanking aperture array shown in FIG. 3. [Figure 5] It is a schematic diagram showing another example of a top view of a blanking aperture array. [Figure 6] It is a schematic cross-sectional view of a comparative multi-electron beam lithography apparatus. [Figure 7] It is a schematic diagram showing the deflection of an electron beam formed by a shaping aperture array by the multi-electron beam lithography apparatus of the first embodiment. [Figure 8] It is a schematic diagram showing Fleming's left-hand rule. [Figure 9] It is a schematic diagram when viewing an electron beam and a magnetic field applying device from the upper part of an electron lens barrel. [Figure 10] It is a schematic diagram showing the trajectory of electrons deflected in the -X direction by an electric field in a magnetic field. [Figure 11] It is a schematic diagram of an example of a magnetic field lens. [Figure 12] It is a schematic cross-sectional view of a multi-charged particle beam apparatus of the second embodiment. [Figure 13] It is a schematic cross-sectional view of a multi-charged particle beam apparatus of the second embodiment.

Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments will be described with reference to the drawings. In the drawings, the same or similar parts are denoted by the same or similar reference numerals.

[0011] In this specification, the same or similar members may be denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0012] In this specification, in order to indicate the positional relationship of components and the like, the upward direction of the drawing is described as "up" and the downward direction of the drawing is described as "down". In this specification, the concepts of "up" and "down" are not necessarily terms indicating the relationship with the direction of gravity.

[0013] (First Embodiment) The multi-charged particle beam apparatus of this embodiment includes an emission unit that emits a charged particle beam; a first substrate having a plurality of first apertures through which a portion of the charged particle beam passes, thereby forming a multi-charged particle beam; a plurality of second apertures through which the multi-charged particle beam passes; a plurality of electrode pairs provided in each of the plurality of second apertures; an electric field generator that generates an electric field by applying a voltage to the electrode pairs; a magnetic field generator that generates a magnetic field parallel to the optical axis of the multi-charged particle beam with respect to the multi-charged particle beam that has passed through the plurality of second apertures; and a second substrate having a third aperture at the focal plane of the charged particle beam downstream of the magnetic field generator, which allows the multi-charged particle beam to pass through or is shielded.

[0014] Figure 1 is a schematic cross-sectional view of the multi-electron beam lithography apparatus 160 of this embodiment. The multi-electron beam lithography apparatus 160 is an example of a multi-charged particle beam apparatus. The electron beam is an example of a charged particle beam.

[0015] The multi-electron beam lithography apparatus 160 comprises an electron tube 102 (multi-electron beam column) and a lithography chamber 103. Inside the electron tube 102 are an electron gun (an example of an emission unit) 201, an illumination lens 202, a shaping aperture array (an example of a first substrate) 203, an electric field generator 106 (e.g., a blanking aperture array), a magnetic field generator 107, a reduction lens 205, a limiting aperture member (an example of a second substrate) 206, an objective lens 207, a main deflector 208, and a secondary deflector 209.

[0016] Here, we define the X-axis, the Y-axis perpendicular to the X-axis, and the Z-axis perpendicular to both the X and Y axes. The electron gun 201 is assumed to emit an electron beam 200 in the direction opposite to the Z-axis direction. The sample 101 is assumed to be positioned in a plane parallel to the XY plane.

[0017] The electron beam 200 emitted from the electron gun 201 illuminates the molded aperture array 203 almost vertically through the illumination lens 202. A multibeam 111 is formed as a portion of the electron beam 200 passes through the first apertures 203a, 203b, 203c, 203d, 203e, and 203f of the molded aperture array 203. The multibeam 111 has electron beams 109a, 109b, 109c, 109d, 109e, and 109f. The shape of each electron beam 109 reflects the shape of the aperture of the molded aperture array 203, for example, a rectangular shape. In Figure 1, six apertures of the molded aperture array 203 are shown, but this is not the only option. For example, the first apertures of the molded aperture array 203 are arranged in a matrix of 512 in each of the X and Y directions.

[0018] The electric field generator 106 is located below the shaped aperture array 203. The electric field generator 106 has second apertures 106a, 106b, 106c, 106d, 106e, and 106f. The electron beams 109a, 109b, 109c, 109d, 109e, and 109f pass through the second apertures 106a, 106b, 106c, 106d, 106e, and 106f, respectively. The electron beam 109g, shown as a dotted line in the figure, is an electron beam deflected by the electric field generator 106.

[0019] Figure 2 is a schematic diagram illustrating the principle of the electric field generator 106 of this embodiment. Figure 2 is a schematic cross-sectional view showing one of the second apertures 106a to 106f of the electric field generator 106 of this embodiment and its surroundings. In the electric field generator 106, for example, a pair of electrodes 520a and 520b are arranged on a substrate 500. A predetermined voltage is applied between electrode 520b and electrode 520a. The predetermined voltage is, for example, several volts, but is not particularly limited. In addition, one electrode, for example 520a, may be grounded by wiring not shown. As a result, an electric field is generated between electrode 520a and electrode 520b, and electrons passing through the second aperture 106a are deflected.

[0020] Voltage is applied, for example, by a semiconductor element (switching element, not shown) provided within the substrate 500. Electrodes 502a and 502b are connected to the semiconductor element (not shown) via via 507 and wiring 506. The semiconductor element is electrically connected by wiring, such as multilayer wiring, to a pad (not shown) provided on the electric field generator 106. This pad is electrically connected to an external power supply (not shown).

[0021] In this context, CMOS (Complementary Metal-Oxide-Semiconductor) elements are often used as switching elements.

[0022] Figure 3 is a schematic diagram showing an example of a top view of the electric field generator 106. Figure 4 is a schematic diagram showing an example of a cross-sectional view of the electric field generator 106 shown in Figure 3 along the line A-A'. The pair of electrodes 520a and 520b may be provided on the substrate 500 as shown in Figure 4(a). Alternatively, the pair of electrodes 520a and 520b may be provided on the side surface of the second opening 106a as shown in Figure 4(b).

[0023] Although Figure 3 only shows electrode pairs 502a and 502b, the area around the second aperture 106a can also be surrounded by a ground electrode 520a to prevent interference between electron beams passing through adjacent apertures. An example of this is shown in Figure 5. Various patterns have been proposed to prevent interference between electron beams passing through adjacent apertures, and this is not the only one.

[0024] To increase switching speed, the voltage used in CMOS elements is being reduced. As a result, the voltage applied between electrode 520a and electrode 520b decreases, and the amount of electron deflection decreases.

[0025] Figure 6 is a schematic cross-sectional view of a comparative multi-electron beam lithography apparatus 1000. The dotted line 109g shows the case where the voltage applied between electrodes 520a and 520b is sufficiently high, deflected sufficiently by the electric field, and shielded by the limiting aperture member 206, while the dashed line 109h shows the case where the voltage applied between electrodes 520a and 520b is low, the amount of deflection by the electric field is small, and the electron beam passes through the limiting aperture 214. The electron beam 109h that passes through reaches the sample 101, resulting in pattern defects due to the unwanted beam.

[0026] One way to avoid this is to reduce the diameter of the aperture 214 of the limiting aperture 206. However, reducing the aperture diameter makes beam adjustment more difficult and narrows the adjustment margin.

[0027] Another way to avoid this is to increase the height of the electrode in the Z direction. However, increasing the electrode height requires increasing the thickness of the resist used for electrode formation. Exposing a thick resist requires the use of an exposure apparatus with a large depth of field. However, in recent semiconductor equipment manufacturing processes, the trend is to thin the resist and use an exposure apparatus with a small depth of field to improve resolution performance. Using a thick resist would require the use of special resists and special exposure apparatus that do not conform to this trend. Therefore, there has been a problem in forming electrodes with a high height in the Z direction.

[0028] Furthermore, when a thick resist film is applied to a semiconductor wafer, cracking of the resist is more likely to occur after application. In addition, after the resist development process, resist residue is more likely to occur at the base of the formed resist. This led to a problem where electrode shape defects were more likely to occur.

[0029] In the comparative example, Figure 6, similar to the electron beam 109h shown by the dashed line, the electron beam 109g shown by the dotted line in Figure 1 is not sufficiently deflected by the electric field alone. It can pass through the limiting aperture 214 and is not shielded by the limiting aperture member 206, resulting in unwanted electron beam irradiation of the sample surface 101.

[0030] Therefore, in this embodiment, only the electron beam deflected by the electric field is further deflected by the magnetic field to increase the amount of deflection.

[0031] The multi-electron beam lithography apparatus 160 has a magnetic field generator 107. The magnetic field generator 107 is capable of applying a magnetic field that is as uniform as possible, parallel to the Z direction, within the magnetic field generator 107. Here, for example, if the optical axis of the electron beam is parallel to the -Z direction, the magnetic field generator 107 applies a magnetic field in the -Z direction or parallel to the Z direction.

[0032] A magnetic field generated by a magnetic field generator 107 is applied to electron beams 109g, 109b, 109c, 109d, 109e, and 109f that have passed through the second apertures 106a, 106b, 106c, 106d, 106e, and 106f. The electron beam 109g, which is deflected by the blanking aperture array 106, an electric field generator shown by a dotted line in the figure, is further deflected by the magnetic field generated by the magnetic field generator 107 and shielded by the limiting aperture member 206.

[0033] In the x-direction of Figure 1, the electron beam, bent by an electric field, then passes through a magnetic field generated by a magnetic field generator 107, a solenoid coil in this example. The magnetic field is applied parallel to the z-direction of the electron beam's optical axis.

[0034] Figure 7 is a schematic diagram showing the deflection of the electron beam 109 by the magnetic field after passing through the electric field generator in the multi-electron beam lithography apparatus 160 of this embodiment. Figure 8 is a schematic diagram showing Fleming's left-hand rule. Here, it is assumed that the electron beam 109 travels in a straight line in the -Z direction, and a magnetic field is applied in the +Z direction by the magnetic field application device 107. Note that the magnetic field generator 107 may also apply a magnetic field in the -Z direction.

[0035] Figure 7(b) shows the trajectory of the electron beam 109 deflected by the electric field of the electric field generator 106. The electron beam 109 is deflected by the electric field generator 106, for example, by Δx per unit distance in the Z direction. The magnetic field generated by the magnetic field application device 107 causes the X-direction deflection component of the electron beam 109 to be subjected to a force in the Y direction according to Fleming's left-hand rule. The electron beam 109 is deflected in the Y direction, perpendicular to the electron's straight-line direction of propagation, for example, by Δy per unit distance in the Z direction. Therefore, after passing through the magnetic field, the electron beam 109 is deflected by the electric field from the electric field generator 106 and the magnetic field from the magnetic field application device 107, resulting in an overall deflection of Δ=(Δx). 2 +Δy 2 ) 0.5 The beam is deflected by only a certain amount. Because the amount of deflection increases from Δx to Δ due to the magnetic field, if the radius of the limiting aperture 214 is smaller than Δ, it is shielded by the limiting aperture member 206. In this way, the amount of deflection of the electron beam can be increased by applying a magnetic field, so the desired electron beam can be shielded by the limiting aperture member 206 without reducing the diameter of the limiting aperture 214 or increasing the height of the electrodes.

[0036] In the above, assuming that the optical axis coincides with the center of the limiting aperture 214, the conditions for electron beam passage were described based on whether the radius of the limiting aperture 214 is greater than Δ. During optical system adjustment, the center of the limiting aperture 214 and the optical axis may be slightly misaligned. What is important is whether the deflection amount Δ is greater than or less than the distance shielded by the limiting aperture member 206, which determines whether the electron beam can pass through the limiting aperture 214 or not.

[0037] On the other hand, Figure 7(a) shows the trajectory of the electron beam 109, which is not deflected by the electric field of the electric field generator 106.

[0038] The electron beam 109, which is not deflected by the electric field of the electric field generator 106, has no velocity component in a plane perpendicular to the Z direction. Therefore, it is not subject to the force according to Fleming's left-hand rule and is not deflected by the magnetic field. After being reduced by the reduction lens 205, it passes through, for example, a limiting aperture member 206 placed at the focal plane and reaches the sample surface.

[0039] The electron beams 109b-f that have passed through the limiting aperture member 206 are imaged by the objective lens 207 and deflected collectively by the main deflector 208 and the sub-deflector 209. They are then directed onto the respective irradiation positions on the sample 101 placed on the XY stage 105. A mirror 210 for measuring the position of the XY stage 105 is positioned on the XY stage 105.

[0040] This allows the electron beam to be selectively irradiated onto the sample surface, enabling the acquisition of a desired pattern. It is preferable to apply a magnetic field to the all-electron beam as uniformly as possible, parallel to the z-direction, and with a magnetic force of a certain level or higher. Here, an example of generating a magnetic field using a solenoid coil is shown.

[0041] Figure 9 is a schematic diagram showing the electron beam 109 and the solenoid coil 107, which is a magnetic field generator, as viewed from the top of the electron microscope tube 102. The magnetic field generator 107 is positioned to surround the entire electron beam 109 formed by the shaped aperture array 203. When current is passed in the direction of the arrow shown in Figure 9, a magnetic field is generated parallel to the Z direction.

[0042] An example of how to set detailed conditions will be explained using Figure 10. FIG. 10 is a schematic diagram showing the trajectory of electrons deflected in the -X direction by an electric field, projected onto the XY plane in a magnetic field. Assume that the magnetic field is applied to a region S having a length of 2l in the -X direction. When a uniform magnetic field is applied in the XY plane (in a direction perpendicular to the XY plane), the trajectory of the electron beam projected onto the XY plane performs circular motion (however, since the electron beam is traveling straight in the -Z direction, it is actually helical motion). Here, assume that when the electrons contained in the electron beam 109 have advanced 2l in the -X direction, they exit the region where the magnetic field is applied.

[0043] At this time, if the radius of the circular motion projected onto the XY plane is R, the deflection amount y1 when it exits the region where the magnetic field is applied is expressed as R - Rcosα. Here, α is the angle of the circular motion of the electrons performed in the region where the magnetic field is applied. 1 - cosα is 2sin 2 (α / 2). When α is sufficiently small, sin(α / 2) ~ α / 2, and α ~ (2l) / R, so y1 becomes 2l 2 / R.

[0044] If the elementary charge is e, the mass of the electron is m, the magnetic field is B, and the deflection electric field is E, then the electron performs circular motion in the magnetic field, and when it enters the magnetic field, the y-component v y of the velocity is 0. Therefore, the velocity v x of the electron in the x direction when it enters the magnetic field is v x 2 ~ (eB / m) 2 R 2 and becomes.

[0045] Also, since the electrons are deflected in the x direction by the electric field, if the height of the electrode is d, from the equation of motion, v x = (2eEd / m) 0.5 and becomes.

[0046] From both equations, R is (1 / B)(2mEd / e) 0.5 and y1 ~ 2l 2 B((e / (2mEd)) 0.5 and becomes. If the acceleration voltage of the electron beam is V acc , then the velocity v z(2eV acc / m) 0.5 Therefore, if Z is the distance over which the magnetic field is applied (length of the coil), then the duration of the magnetic field application is Z / v. z =Z((m / (2eV acc )) 0.5 Therefore, 2l = v x ×(Z / v z )=Z(Ed / V acc ) 0.5 This is the result. From these, the deflection amount y1 in the y direction can be calculated, (BZ 2 / (2V acc ))(eEd / (2m)) 0.5 This is the result. By adjusting the strength of the electric field E and magnetic field B between the BAA electrodes, and the length Z of the coil, the amount of deflection of electrons after passing through the magnetic field B can be determined. Therefore, the limiting aperture member 206 (Figure 1) can be used to shield the electron beam 109g, preventing it from reaching the sample surface.

[0047] Thus, even if the amount of deflection due to the electric field is insufficient, a sufficient amount of deflection can be obtained by applying a magnetic field without increasing the height of the BAA electrode or decreasing the diameter of the limiting aperture 214.

[0048] The method for generating the magnetic field is not limited to the method described above. It is sufficient to generate a magnetic field parallel to the z-direction. While uniformity is desirable, a distribution in the magnetic field is acceptable, as long as a certain level of deflection is obtained, the electron beam can be shielded by the limiting aperture 214.

[0049] As described above, the magnetic field generator 107 is positioned after the electric field generator 106 and before the limiting aperture member 206. Since only electrons deflected by the electric field are further deflected by the magnetic field generator 107, the magnetic field generator 107 is positioned after the electric field generator 106. Also, since it must be shielded by the limiting aperture member 206, it is positioned before the limiting aperture member 206. In this embodiment, the magnetic field generator is placed before the reduction lens 205 (107), but it is also possible to place it after the reduction lens 205 and before the limiting aperture member 206.

[0050] Here, a solenoid coil is given as an example of a magnetic field generator 107, but it is not limited to this, and it is also possible to use a Helmholtz coil, Maxwell coil, etc.

[0051] Magnetic fields are also used in electron optical systems as magnetic lens elements to focus beams. The difference between a lens and the magnetic field in this invention is that the former, being intended to focus a beam, includes a magnetic field component that brings electrons away from the optical axis of the beam closer to the optical axis. Figure 11 illustrates the structure of the magnetic lens 600. Figure 11 shows the magnetic lens 600, pole piece 602, electron beam 604, coil 606, and magnetic field lines 608. Figure 11(a) is a schematic diagram showing an example of the structure of the magnetic lens 600. Figure 11(b) is a schematic cross-sectional view showing the tip and surrounding area of ​​the pole piece 602 of the magnetic lens 600. Since an electron beam cannot be focused with a donut-shaped coil like the one in this invention, the entire coil 606 is surrounded by a soft iron yoke 610 with a notch in part. Furthermore, the pole piece 602 is provided inside the coil 606. The tip of the pole piece 602 becomes the north and south pole, and the magnetic flux generated by the coil 606 is concentrated at the tip of the pole piece 602 (Figure 11(b)). Electrons that are far from the optical axis are drawn towards the optical axis by the magnetic field created by the pole piece 602. This causes the electrons to converge. On the other hand, the present invention aims to generate a magnetic field parallel to the optical axis. In this respect, the two differ.

[0052] In a magnetic lens, the entire coil is enclosed in a yoke, with a notch cut out in a section to form a pole piece inside. Structurally, a magnetic lens differs from a solenoid coil.

[0053] Furthermore, while magnetic field lenses apply a magnetic field to focus a single beam onto the optical axis, this invention applies a magnetic field to multiple beams. This is another point of difference between magnetic field lenses and this invention.

[0054] The multi-charged particle beam apparatus of this embodiment makes it possible to provide a multi-charged particle beam apparatus that can obtain a sufficient amount of beam deflection.

[0055] (Second Embodiment) By inserting a limiting aperture member into the focal plane, the beam can be selected to be shielded or transmitted. In Figure 1, a limiting aperture member 206, including a limiting aperture 214 that determines the transmission or shielding of the multi-charged particle beam, is placed at the focal plane after passing through the reduction lens 205. Depending on the design of the optical system of the device, there may be multiple focal planes, and it is possible to place the limiting aperture in any one of them.

[0056] For example, Figures 12 and 13 show an example of a device in which the acceleration voltage of the electron beam generated by the electron gun is 5 kV, and the acceleration voltage is increased to 50 kV by the subsequent accelerating lens 211. In this case, there are two focal planes. The limiting aperture function can be provided by either the aperture 214a formed on substrate 206a or the aperture 214b formed on substrate 206b.

[0057] The trajectory of the beam 109g, deflected by the electric field formed by the voltage applied to the electrode from the semiconductor device 106 and the magnetic field generated by the solenoid coil 107, is shown by dotted lines in Figures 12 and 13.

[0058] In Figure 12, the limiting aperture function is provided by an aperture 214a formed on the substrate 206a. The multi-charged particle beam 109g, deflected by the electric and magnetic fields, cannot pass through the limiting aperture 214a and is shielded by the substrate 206a. As a result, the charged particle beam is selectively irradiated onto the sample 101.

[0059] In Figure 13, the function of the limiting aperture is provided by the aperture 214b formed on the substrate 206b. The multi-charged particle beam 109g, deflected by the electric and magnetic fields, is deflected less than the diameter of the limiting aperture 214a and can pass through the limiting aperture 214a. However, the deflection is greater than the diameter of the aperture 214b formed on the substrate 206b, and the multi-charged particle beam 109g cannot pass through the limiting aperture 214b and is shielded by the substrate 206b. As a result, the charged particle beam is selectively irradiated onto the sample 101.

[0060] The main point of this application is that, when there are multiple focal planes, any of the focal planes can be used as a limiting aperture member, and is not limited to the above embodiment.

[0061] In addition to electron beams, the charged particle beam in the embodiment may also be an ion beam or a cluster beam. For example, an ion beam using hydrogen ions, helium ions, boron ions, or silicon ions can be used.

[0062] The multi-charged particle beam apparatus of the embodiment includes a multi-charged particle beam lithography apparatus that draws a mask pattern on a mask blank using a charged particle beam including an electron beam; a multi-charged particle beam microscope that observes the pattern by detecting secondary electrons, backscattered electrons, and secondary ions generated by irradiating a sample with a charged particle beam including an electron beam; and a multi-charged particle beam inspection apparatus that inspects the pattern by detecting secondary electrons, backscattered electrons, and secondary ions generated by irradiating a sample with a charged particle beam including an electron beam.

[0063] While several embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents.

[0064] Furthermore, the above embodiments can be summarized in the following technical proposal. (Technical proposal 1) An emission unit that emits a charged particle beam, A first substrate having multiple first openings formed therein, through which a portion of the charged particle beam passes, thereby forming a multi-beam of the charged particle beam, A plurality of second apertures through which each of the multi-charged particle beams passes, A plurality of electrode pairs are provided in each of the plurality of second openings, An electric field generator that generates an electric field by applying a voltage to the electrode pair, A magnetic field generator that generates a magnetic field parallel to the optical axis of the multi-charged particle beam with respect to the multi-charged particle beam that has passed through the plurality of second apertures, A second substrate having a third opening at the focal plane of the charged particle beam downstream of the magnetic field generator, which allows the multi-charged particle beam to pass through or be shielded, A multi-charged particle beam device equipped with the following features. (Technical proposal 2) The application of voltage to the electrode pair is The multi-charged particle beam apparatus according to Technical Proposal 1, characterized in that it is performed using a semiconductor element having a switching function connected to the electrode pair via wiring. (Technical proposal 3) The aforementioned magnetic field generator is The coils are arranged to surround all of the aforementioned multi-charged particle beams, A multi-charged particle beam apparatus according to Technical Proposal 1, characterized in that a magnetic field is generated by passing an electric current through the coil. (Technical proposal 4) The aforementioned magnetic field generator is The multi-charged particle beam apparatus according to Technical Proposal 1, characterized in that it has a solenoid coil, a Helmholtz coil, or a Maxwell coil arranged to surround all of the multi-charged particle beams. (Technical proposal 5) The electric field generated by applying a voltage to the electrode pair causes a portion of the multi-charged particle beam to be deflected. The multi-charged particle beam apparatus according to Technical Proposal 1, characterized in that the multi-charged particle beam, which is deflected by the electric field, is further deflected by the magnetic field generated parallel to the optical axis of the multi-charged particle beam. (Technical proposal 6) The multi-charged particle beam apparatus according to Technical Proposal 1, characterized in that the magnetic field generator is placed between the electric field generator and the second substrate. [Explanation of Symbols]

[0065] 101: Sample 102: Electron beam column (multi-electron beam column) 103:Drawing room 105: XY Stage 106: Electric field generator (blanking aperture array) 106a: 2nd opening 106b: 2nd opening 106c: 2nd opening 106d: Second opening 106e: 2nd opening 107: Magnetic field generator 109: Electron beam 109a: Electron beam 109b: Electron beam 10⁹c: Electron beam 109d: Electron beam 109e: Electron beam 109g: Electron beam 111: Multibeam 160: Multi-electron beam lithography system 170: Multi-electron beam lithography system 200: Electron beam 201: Electron gun (emission unit) 202: Lighting Lens 203: Molded aperture array (first substrate) 203a: 1st opening 203b: 1st opening 203c: 1st opening 203d: 1st opening 203e: 1st opening 205: Reduction lens 206: Restrictive aperture member (second substrate) 206a: Restrictive aperture member 206b: Restrictive aperture member 207: Objective lens 208: Main deflector 209: Sub-deflector 210: Mirror 211: Accelerating Lens 212: Lens 213: Lens 214: Third opening 214a: Third opening 214b: 4th opening 500: Circuit board 505: Semiconductor devices 507: Wiring 520a: Electrode 520b: Electrode 1000: Multi-electron beam lithography system

Claims

1. An emission unit that emits a charged particle beam, A first substrate having multiple first openings formed therein, through which a portion of the charged particle beam passes, thereby forming a multi-beam of the charged particle beam, A plurality of second openings through which each of the multi-charged particle beams passes, A plurality of electrode pairs are provided in each of the plurality of second openings, An electric field generator that generates an electric field by applying a voltage to the electrode pair, A magnetic field generator that generates a magnetic field parallel to the optical axis of the multi-charged particle beam with respect to the multi-charged particle beam that has passed through the plurality of second apertures, A second substrate having a third opening at the focal plane of the charged particle beam downstream of the magnetic field generator, which allows the multi-charged particle beam to pass through or be blocked, A multi-charged particle beam device equipped with the following features.

2. The application of voltage to the electrode pair is The multi-charged particle beam apparatus according to claim 1, characterized in that it is performed using a semiconductor element having a switching function connected to the electrode pair via wiring.

3. The aforementioned magnetic field generator is The coils are arranged to surround all of the aforementioned multi-charged particle beams, The multi-charged particle beam apparatus according to claim 1, characterized in that a magnetic field is generated by passing an electric current through the coil.

4. The aforementioned magnetic field generator is The multi-charged particle beam apparatus according to claim 1, characterized in that it has a solenoid coil, a Helmholtz coil, or a Maxwell coil arranged to surround all of the multi-charged particle beams.

5. The electric field generated by applying a voltage to the electrode pair causes a portion of the multi-charged particle beam to be deflected. The multi-charged particle beam apparatus according to claim 1, characterized in that the multi-charged particle beam, which is deflected by the electric field, is further deflected by the magnetic field generated parallel to the optical axis of the multi-charged particle beam.

6. The multi-charged particle beam apparatus according to claim 1, characterized in that the magnetic field generator is placed between the electric field generator and the second substrate.

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