Light-emitting device

Abstract

To realize a light-emitting device that can reduce power consumption when adjusting the output of light emitted from the device. [Solution] The light-emitting device 1 comprises one or more first semiconductor laser elements, a number of second semiconductor laser elements that emit light of the same color as the first semiconductor laser elements and are greater than the number of first semiconductor laser elements, a substrate on which the first semiconductor laser elements and the second semiconductor laser elements are arranged, a plurality of wiring sections provided on the substrate, and a plurality of wires that electrically connect the first semiconductor laser elements and the second semiconductor laser elements to the plurality of wiring sections. The plurality of wiring sections and the plurality of wires provide a first current path that drives only the first semiconductor laser elements, a second current path that drives only the second semiconductor laser elements, and a third current path that drives both the first and second semiconductor laser elements.

Description

Technical Field

[0001] The present invention relates to a light-emitting device.

Background Art

[0002] Patent Document 1 discloses a light-emitting device in which a plurality of semiconductor laser elements are electrically connected in series by wire wiring. In the light-emitting device described in Patent Document 1, when adjusting the output of the light emitted from the light-emitting device, the current value is adjusted.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] To realize a light-emitting device capable of reducing power consumption when adjusting the output of the light emitted from the light-emitting device.

Means for Solving the Problems

[0005] The light-emitting device disclosed in the embodiment includes one or more first semiconductor laser elements, one or more second semiconductor laser elements, a substrate on which the one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged, a plurality of wiring portions provided on the substrate, and a plurality of wirings for electrically connecting the one or more first semiconductor laser elements and the one or more second semiconductor laser elements to the plurality of wiring portions, and is provided with the one or more first semiconductor laser elements and the one or more second semiconductor laser elements emit light of the same color, The number of the one or more second semiconductor laser elements arranged on the substrate is one or more greater than the number of the one or more first semiconductor laser elements arranged on the substrate. The plurality of wiring sections and the plurality of wirings, A first current path that drives only the one or more first semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A second current path that drives only the one or more second semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A third current path for driving the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A system is in place.

[0006] In at least one of the one or more inventions disclosed by the embodiments, a light-emitting device can be realized that can reduce power consumption when adjusting the output of light emitted from the light-emitting device. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a perspective view of a light-emitting device according to an embodiment. [Figure 2] Figure 2 is a side view corresponding to Figure 1. [Figure 3] Figure 3 is a cross-sectional view of the light-emitting device along line III-III in Figure 1. [Figure 4] Figure 4 is a perspective view of the package according to the embodiment. [Figure 5] Figure 5 is a cross-sectional view of the package along the VV line in Figure 4. [Figure 6] Figure 6 is a top view of the substrate according to the embodiment. [Figure 7] Figure 7 is a bottom view of the substrate according to the embodiment. [Figure 8] Figure 8 is a cross-sectional view of the substrate along the line VIII-VIII in Figure 6. [Figure 9] FIG. 9 is a perspective view for explaining the internal structure of the light-emitting device according to the embodiment. [Figure 10] FIG. 10 is a top view for explaining the internal structure of the light-emitting device according to the embodiment. [Figure 11] FIG. 11 is a top view of the periphery of the semiconductor laser element according to the embodiment. [Figure 12] FIG. 12 is a side view of the periphery of the semiconductor laser element according to the embodiment. [Figure 13A] FIG. 13A is a top view for explaining the state of wire bonding with respect to the light-emitting device according to the first example. [Figure 13B] FIG. 13B is an electrical circuit diagram corresponding to FIG. 13A. [Figure 14A] FIG. 14A is a top view for explaining the state of wire bonding with respect to the light-emitting device according to the second example. [Figure 14B] FIG. 14B is an electrical circuit diagram corresponding to FIG. 14A. [Figure 15A] FIG. 15A is a top view for explaining the state of wire bonding with respect to the light-emitting device according to the third example. [Figure 15B] FIG. 15B is an electrical circuit diagram corresponding to FIG. 15A.

MODE FOR CARRYING OUT THE INVENTION

[0008] In this specification or the claims, with respect to polygons such as triangles and quadrilaterals, those having shapes subjected to processing such as rounding, chamfering, corner rounding, and rounding at the corners of the polygon are also referred to as polygons. Further, not limited to the corners (ends of the sides), those having shapes subjected to processing in the middle part of the sides are also similarly referred to as polygons. That is, shapes subjected to partial processing while leaving the polygon as a base are included in the interpretation of the "polygon" described in this specification and the claims.

[0009] Furthermore, the same applies not only to polygons, but also to words describing specific shapes such as trapezoids, circles, and concave shapes. The same also applies when dealing with each side that forms such a shape. In other words, even if a side has been processed at a corner or in the middle, the interpretation of "side" includes the processed part. When distinguishing a "polygon" or "side" without partial processing from a processed shape, the term "strictly" should be added, for example, "strictly quadrilateral."

[0010] Furthermore, in this specification or the claims, descriptions such as up and down (up / down), left and right, front and back, front and back (front / back), and front and back merely describe relative positions, orientations, and directions, and do not necessarily correspond to the relationships during use.

[0011] Furthermore, directions such as the X, Y, and Z directions may be indicated in the drawings using arrows. The direction of these arrows is consistent across multiple drawings representing the same embodiment. In the drawings, the direction of arrows marked X, Y, and Z is considered the positive direction, and the opposite direction is considered the negative direction. For example, the direction indicated by an X at the end of the arrow is the X direction and is also the positive direction. In this specification, the direction that is both the X direction and the positive direction will be referred to as the "positive X direction," and the opposite direction will be referred to as the "negative X direction." When referring to the "X direction," both the positive and negative directions are included. The same applies to the Y and Z directions.

[0012] Furthermore, in this specification, when an object is identified as "one or more" and described accordingly, the form in which there is one object and the form in which there are multiple objects are described together. Accordingly, the description identifying an object as "one or more" supports any of the embodiments comprising one or more objects, embodiments comprising at least one object, and embodiments comprising multiple objects.

[0013] Furthermore, in this specification, descriptions describing "one or each" of an object are a combined description of one object in an embodiment having one object, one object in an embodiment having multiple objects, and each of the multiple objects in an embodiment having multiple objects. Accordingly, descriptions describing "one or each" of an object support any of the following: in an embodiment having one object, this one object provides the description; in an embodiment having multiple objects, at least one of these objects provides the description; in an embodiment having multiple objects, each of these multiple objects provides the description; and in an embodiment having one or more objects, all objects provide the description.

[0014] Furthermore, in this specification, the terms "component" and "part" may be used when describing components, for example. "Component" refers to an object that is treated as a single physical unit. An object that is treated as a single physical unit can also be an object that is treated as a single part in the manufacturing process. On the other hand, "part" refers to an object that does not necessarily have to be treated as a single physical unit. For example, "part" is used when considering a part of one component, or when considering multiple components together as a single object.

[0015] Furthermore, the distinction between "component" and "part" as described above does not indicate an intention to consciously limit the scope of rights in the interpretation of the doctrine of equivalents. In other words, even if a component is described as a "component" in the claims, this alone does not mean that the applicant recognizes that treating this component as a physical unit is indispensable for the application of the present invention.

[0016] Furthermore, in this specification or the claims, when there are multiple components and each is to be expressed separately, the components may be distinguished by adding "1st," "2nd," etc., to their names. Also, the objects being distinguished may differ between this specification and the claims. Therefore, even if a component with the same prefix as in this specification is described in the claims, the objects identified by this component may not be the same in this specification and the claims.

[0017] For example, if there are components designated as “First,” “Second,” and “Third” in this specification to distinguish them, and these components are described in the claims as “First” and “Third” in this specification, then for readability, the components may be distinguished in the claims as “First” and “Second.” In this case, the components designated as “First” and “Second” in the claims refer to the components designated as “First” and “Third” in this specification, respectively. This rule is not limited to components, but can be applied to other subjects in a reasonable and flexible manner.

[0018] The following describes embodiments for carrying out the present invention. Furthermore, specific embodiments for carrying out the present invention will be described with reference to the drawings. However, the embodiments for carrying out the present invention are not limited to these specific embodiments. In other words, the illustrated embodiments are not the only forms in which the present invention is realized. Note that the size and positional relationships of the components shown in each drawing may be exaggerated for the sake of ease of understanding.

[0019] <Embodiment> A light-emitting device 1 according to an embodiment will be described. Figures 1 to 7 are drawings illustrating an exemplary form of the package 10. Figure 1 is a perspective view of the light-emitting device 1 according to an embodiment. Figure 2 is a side view corresponding to Figure 1. Figure 3 is a cross-sectional view of the light-emitting device 1 along line III-III in Figure 1. Figure 4 is a perspective view of the package 10 according to an embodiment. Figure 5 is a cross-sectional view of the package 10 along line VV in Figure 4. Figure 6 is a top view of the substrate 11 according to an embodiment. Figure 7 is a bottom view of the substrate 11 according to an embodiment. Figure 8 is a cross-sectional view of the substrate 11 along line VIII-VIII in Figure 6. Figure 9 is a perspective view illustrating the internal structure of the light-emitting device 1 according to an embodiment. Figure 10 is a top view illustrating the internal structure of the light-emitting device 1 according to an embodiment. Figure 11 is a top view of the area around the semiconductor laser element 20 according to an embodiment. Figure 12 is a side view of the area around the semiconductor laser element 20 according to an embodiment.

[0020] (Light-emitting device 1) The light-emitting device 1 comprises a plurality of components. These plurality of components include a package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflective members 40, one or more protective elements 50, multiple wirings 60, and optical members 70.

[0021] Furthermore, the light-emitting device 1 may have other components. For example, the light-emitting device 1 may have additional semiconductor laser elements in addition to the one or more semiconductor laser elements 20. Also, the light-emitting device 1 may not have some of the components listed here.

[0022] First, let's explain each component.

[0023] (Package 10) Package 10 comprises a base 11 and a lid 14. Package 10 is formed by joining the lid 14 to the base 11. Within package 10, an internal space is defined where other components are arranged. This internal space is a closed space surrounded by the base 11 and the lid 14. Furthermore, this internal space can be a space sealed in a vacuum or airtight state.

[0024] In a top view, the outer edge shape of package 10 is rectangular. This rectangle can have a long side and a short side. In the illustrated package 10, the direction of the long side of this rectangle is the same as the X direction, and the direction of the short side is the same as the Y direction. Note that the outer edge shape of package 10 does not have to be rectangular in a top view.

[0025] In package 10, an internal space is formed where other components are arranged. The first upper surface 11A of package 10 is part of the region that defines the internal space. In addition, each inner surface 11E and the lower surface 14B of package 10 are part of the region that defines the internal space.

[0026] The base 11 has a first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer surfaces 11D. The base 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect with the second upper surface 11C. One or more outer surfaces 11D intersect with the lower surface 11B. One or more inner surfaces 11E intersect with the second upper surface 11C.

[0027] In a top view, the outer edge shape of the base 11 is rectangular. In a top view, the outer edge shape of the base 11 is the same as the outer edge shape of the package 10. In a top view, the outer edge shape of the first top surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The direction of the long side of the first top surface 11A is parallel to the direction of the long side of the outer edge shape of the base 11. Note that in a top view, the outer edge shape of the first top surface 11A does not have to be rectangular.

[0028] In a top view, the first top surface 11A is surrounded by the second top surface 11C. The second top surface 11C is an annular surface that surrounds the first top surface 11A in a top view. The second top surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second top surface 11C is called the inner frame of the second top surface 11C, and the frame defined by the outer edge of the second top surface 11C is called the outer frame of the second top surface 11C.

[0029] The base 11 has a recess surrounded by a frame formed by the second upper surface 11C. The recess defines a portion of the base 11 that is recessed below the second upper surface 11C. The first upper surface 11A is part of the recess. One or more inner surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0030] The base 11 has one or more stepped portions 11F. Each stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, each stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0031] Each of the stepped portions 11F is located inside the inner frame of the second upper surface 11C when viewed from above. Each of the stepped portions 11F is formed along part or all of the inner surface 11E when viewed from above. In the base body 11, the side surface 11H is an inner surface, but side surface 11H and inner surface 11E are different surfaces. Each of the inner surfaces 11E and each of the side surfaces 11H are perpendicular to the first upper surface 11A. Perpendicularity here allows for a difference of ±3 degrees.

[0032] One or more stepped sections 11F may include a first stepped section 11F1 and a second stepped section 11F2. The first stepped section 11F1 and the second stepped section 11F2 are provided at positions where their respective side surfaces 11H face each other. The first stepped section 11F1 and the second stepped section 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0033] One or more inner surfaces 11E may include a first inner surface 11E1 and a second inner surface 11E2 that face each other. The first upper surface 11A is provided between the first inner surface 11E1 and the second inner surface 11E2 in a top view. The first stepped portion 11F1 is provided on the side of the first inner surface 11E1. The second stepped portion 11F2 is provided on the side of the second inner surface 11E2.

[0034] The base 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be made of different materials. The base 11 may be composed of a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0035] The base portion 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0036] The lower surface of the base portion 11M constitutes part or all of the area of ​​the lower surface 11B of the base body 11. If the lower surface of the base portion 11M constitutes part of the area of ​​the lower surface 11B of the base body 11, the lower surface of the frame portion 11N constitutes the remaining area of ​​the lower surface 11B of the base body 11.

[0037] The base body 11 has a plurality of wiring sections 12A. The plurality of wiring sections 12A include one or more wiring sections 12A1 arranged in the internal space of the package 10 and one or more wiring sections 12A2 provided on the outer surface of the package 10.

[0038] The multiple wiring sections 12A1 include one or more wiring sections 12A1 provided on the first inner surface 11E1 side. The multiple wiring sections 12A1 include one or more wiring sections 12A1 provided on the second inner surface 11E2 side.

[0039] One or more wiring sections 12A1 provided on the first inner surface 11E1 side may include a first wiring section 11A11 and a second wiring section 12A12. One or more wiring sections 12A1 provided on the second inner surface 11E2 side may include a third wiring section 12A13 and a fourth wiring section 12A14.

[0040] One or each wiring section 12A1 is provided on the upper surface 11G of the stepped section 11F. The base body 11 has one or more wiring sections 12A1 provided on the upper surface 11G of the first stepped section 11F1. The base body 11 has one or more wiring sections 12A1 provided on the upper surface 11G of the second stepped section 11F2.

[0041] One or each of the wiring sections 12A2 is provided on the lower surface 11B of the package 10. One or each of the wiring sections 12A2 is provided on the lower surface of the frame section 11N. Note that the wiring sections 12A2 may be provided on an outer surface different from the lower surface 11B of the package 10.

[0042] When viewed from above, the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the first stepped portion 11F1 and parallel to this side surface 11H. In the region that includes the upper surface 11G of the first stepped portion 11F1, the base body 11 has one or more wiring portions 12A2 provided on the lower surface 11B of the base body 11.

[0043] When viewed from above, the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the second stepped portion 11F2 and parallel to this side surface 11H. In the region that includes the upper surface 11G of the second stepped portion 11F2, the base body 11 has one or more wiring portions 12A2 provided on the lower surface 11B of the base body 11.

[0044] In the base 11, one or each of the wiring sections 12A1 is electrically connected to a wiring section 12A2. One or more wiring sections 12A1 are electrically connected to different wiring sections 12A2.

[0045] The base body 11 has a joining pattern 13A. The joining pattern 13A is provided on the second upper surface 11C. The joining pattern 13A is provided in an annular shape. The joining pattern 13A is provided in a rectangular annular shape. In a top view, the first upper surface 11A is surrounded by the joining pattern 13A.

[0046] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of ceramics that can be used as the main material for the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0047] Here, the main material refers to the material that accounts for the largest proportion in mass or volume of the object being considered. Furthermore, if the object is formed from a single material, that material is the main material. In other words, for a material to be the main material includes the possibility of that material accounting for 100% of the total.

[0048] The base body 11 may be formed using a base member and a frame member formed using different main materials. The base member can be formed using, for example, a metal or a composite containing a metal, graphite, diamond, or other material with excellent heat dissipation properties as the main material. Examples of metals that can be used as the main material of the base member include copper, aluminum, or iron. Examples of composites containing a metal that can be used as the main material of the base member include copper molybdenum or copper tungsten. The frame member can be formed using, for example, a ceramic as the main material, as mentioned above as the main material of the base body 11.

[0049] The wiring section 12A can be formed, for example, using a metal material as the main material. Examples of the metal material that serves as the main material for the wiring section 12A include elemental metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring section 12A can be composed of, for example, one or more metal layers.

[0050] The bonding pattern 13A can be formed, for example, using a metallic material as the main material. Examples of metallic materials that can be used as the main material for the bonding pattern 13A include elemental metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of, for example, one or more metallic layers.

[0051] The lid 14 has an upper surface 14A and a lower surface 14B. The lid 14 also has one or more side surfaces 14C. The lid 14 is constructed in the shape of a rectangular parallelepiped. However, the shape of the lid 14 does not have to be a rectangular parallelepiped.

[0052] The lid 14 is joined to the base 11. The lower surface 14B of the lid 14 is joined to the second upper surface 11C of the base 11. The lid 14 is joined to the joining pattern 13A of the base 11. The lid 14 is joined to the base 11 via adhesive.

[0053] The lid 14 is translucent, meaning it transmits light. Here, translucency means that the transmittance of light incident on the lid 14 is 80% or more. The lid 14 may also have a non-translucent region (a region that does not transmit light) in part.

[0054] The lid 14 can be formed, for example, using glass as the main material. The lid 14 can also be formed, for example, using sapphire as the main material.

[0055] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle with a long side and a short side. The external shape of the semiconductor laser element 20 when viewed from above is a rectangle with a long side and a short side. However, the shape of the upper surface 21A and the external shape of the semiconductor laser element 20 when viewed from above are not limited to these.

[0056] The semiconductor laser element 20 has a light-emitting surface 22 that emits light. For example, the side surface 21C can be the light-emitting surface 22. The side surface 21C that becomes the light-emitting surface 22 intersects with the short side of the top surface 21A. Alternatively, for example, the top surface 21A can be the light-emitting surface 22.

[0057] The semiconductor laser element 20 can be a single-emitter semiconductor laser element consisting of one emitter. Alternatively, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element consisting of multiple emitters.

[0058] The semiconductor laser element 20 emits light with an emission peak wavelength in the range of 320 nm to 530 nm. Alternatively, the semiconductor laser element 20 emits light with an emission peak wavelength in the range of 430 nm to 480 nm. Examples of semiconductor laser elements 20 that emit light with such emission peak wavelengths include semiconductor laser elements containing nitride semiconductors. As nitride semiconductors, for example, GaN-based semiconductors such as GaN, InGaN, and AlGaN can be used. Note that the light emitted from the semiconductor laser element 20 is not limited to the above wavelength range.

[0059] The semiconductor laser element 20 emits directional laser light. Divergent light with a broad spread is emitted from the light-emitting surface 22 (emission end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light-emitting surface 22. FFP is the shape and light intensity distribution of the emitted light at a position away from the light-emitting surface of the semiconductor laser element.

[0060] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the FFP's light intensity distribution, is referred to as light traveling along the optical axis, or light passing through the optical axis. Furthermore, in the FFP's light intensity distribution, 1 / e is applied to the peak intensity value. 2 Light with the above intensity will be referred to as the main part of the light.

[0061] The shape of the FFP (Fiber Focused Plane) of the light emitted from the semiconductor laser element 20 is an ellipse, with the stacking direction being longer than the direction perpendicular to the stacking direction, in a plane parallel to the light emission surface 22. The stacking direction refers to the direction in which multiple semiconductor layers, including the active layer, are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. Furthermore, the major axis direction of the elliptical shape of the FFP can be called the speed axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0062] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2 The angle at which light of intensity 7 spreads is defined as the light divergence angle of the semiconductor laser element 20. Here, the light divergence angle is calculated by dividing the light of peak intensity (light passing through the optical axis) by 1 / e of the peak intensity. 2 The angle of light divergence is expressed as the angle formed by light of intensity 1 / e of the peak light intensity. 2 In addition to the light intensity, it can also be determined from, for example, the light intensity at half the peak light intensity. In this specification, when we simply refer to the "angle of light divergence," we mean 1 / e of the peak light intensity. 2 This refers to the angle of light divergence at a given light intensity.

[0063] The divergence angle in the speed axis direction of the light emitted from the semiconductor laser element 20 may be between 15 degrees and less than 40 degrees. Furthermore, the divergence angle in the slow axis direction may be greater than 0 degrees and less than or equal to 10 degrees. Additionally, the divergence angle in the speed axis direction is greater than the divergence angle in the slow axis direction.

[0064] (Submount 30) The submount 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered the mounting surface on which other components are mounted. The shape of the upper surface 31A is rectangular. This rectangle of the upper surface 31A may have a short side and a long side. However, the shape of the upper surface 31A does not have to be rectangular.

[0065] The external shape of the submount 30 in a top view is rectangular. This rectangle of the submount 30 may have a short side and a long side. However, the external shape of the submount 30 in a top view does not have to be rectangular. In a top view, the submount 30 may have an external shape in which the length in one direction (hereinafter referred to as the short side direction of the submount 30) is smaller than the length in the direction perpendicular to it (hereinafter referred to as the long side direction of the submount 30). In the illustrated submount 30, the short side direction is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0066] The submount 30 may be composed of a substrate 32A and an upper metal member 32B. The submount 30 may also be composed of a lower metal member 32C. The upper metal member 32B is provided on the upper side of the substrate 32A. The lower metal member 32C is provided on the lower side of the substrate 32A. The submount 30 may also have a wiring layer 33. The wiring layer 33 is provided on top of the upper metal member 32B.

[0067] The substrate 32A is insulating. The substrate 32A is formed from, for example, silicon nitride, aluminum nitride, or silicon carbide. For the main material of the substrate 32A, it is preferable to select a ceramic with relatively good heat dissipation (high thermal conductivity).

[0068] The main material of the upper metal member 32B is a metal such as copper or aluminum. The upper metal member 32B has one or more metal layers. The upper metal member 32B may have multiple metal layers, each primarily made of a different metal.

[0069] The main material of the lower metal member 32C is a metal such as copper or aluminum. The lower metal member 32C has one or more metal layers. The lower metal member 32C may have multiple metal layers, each primarily made of a different metal.

[0070] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0071] For example, the length of the submount 30 in the short side direction is between 700 μm and 1200 μm. Also, the length of the submount 30 in the long side direction is between 1000 μm and 2500 μm. Furthermore, the difference between the length in the long side direction and the length in the short side direction of the submount 30 is between 200 μm and 1800 μm.

[0072] For example, the thickness of the submount 30 (width in the direction perpendicular to the top surface 31A) is 200 μm or more and 400 μm or less. Also, for example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. Also, for example, the thickness of the upper metal member 32B is 30 μm or more and 100 μm or less. Also, for example, the thickness of the lower metal member 32C is 30 μm or more and 100 μm or less. Also, for example, the thickness of the wiring layer 33 is 1 μm or more and 10 μm or less.

[0073] (Reflective member 40) The reflective member 40 has a lower surface 41A and a light-reflecting surface 41B that reflects light. The light-reflecting surface 41B is inclined with respect to the lower surface 41A. The straight line connecting the lower end and upper end of the light-reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined with respect to the lower surface 41A is called the inclination angle of the light-reflecting surface 41B.

[0074] The light-reflecting surface 41B is flat. However, the light-reflecting surface 41B may be curved. The inclination angle of the light-reflecting surface 41B is 45 degrees. However, the inclination angle of the light-reflecting surface 41B does not have to be 45 degrees.

[0075] The main material of the reflective member 40 can be glass or metal. It is preferable to use a heat-resistant material as the main material of the reflective member 40. For example, the main material can be glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflective member 40 can also be formed using Si as the main material.

[0076] If the main material is a reflective material such as Al, the light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B with the main material, the general shape of the reflective member 40 may be formed with the main material, and the light-reflecting surface 41B may be formed on the surface of the general shape. In this case, the light-reflecting surface 41B can be formed using, for example, a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0077] The light-reflecting surface 41B has a reflectance of 90% or more with respect to the peak wavelength of light irradiated onto it. This reflectance may also be 95% or more. Furthermore, this reflectance may be 99% or more. The light reflectance is 100% or less, or less than 100%.

[0078] (Protection element 50) The protective element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The protective element 50 is shaped like a rectangular parallelepiped. However, the protective element 50 does not have to be shaped like a rectangular parallelepiped.

[0079] The protective element 50 is designed to prevent excessive current from flowing through a specific element (such as a semiconductor laser element) and causing it to be damaged. An example of the protective element 50 is a Zener diode. Furthermore, a Zener diode made of silicon can be used.

[0080] (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become connection points with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. The metal can be, for example, gold, aluminum, silver, copper, etc.

[0081] (Optical component 70) The optical member 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 exerts an optical effect on the light incident upon it. Examples of optical effects exerted on light by the optical component 70 include focusing, collimation, diffusion, polarization, diffraction, multiplexing, light guidance, reflection, and wavelength conversion.

[0082] The optical member 70 has an optical surface that provides an optical effect. The upper surface 71A, the lower surface 71B, or the side surface 71C can be the optical surface. Alternatively, the optical surface may be located at a position different from the upper surface 71A, the lower surface 71B, and the side surface 71C. For example, the optical surface may be formed inside the optical member 70 rather than on its surface.

[0083] The optical component 70 may have one or more lens surfaces 71D. The lens surface 71D is the optical working surface of the optical component 70. The optical component 70 having a lens surface 71D may also be called a lens component. Light that passes through the lens surface 71D and is emitted from the optical component 70 is subjected to optical effects such as focusing, diffusion, or collimation by the optical component 70. For example, the optical component 70 is a collimating lens that emits collimated light after light incident on the optical component 70.

[0084] One or each lens surface 71D is located on the upper surface 71A side. Alternatively, the lens surface 71D may be located on the lower surface 71B side. The upper surface 71A and the lower surface 71B are flat. One or each lens surface 71D intersects with the upper surface 71A. In a top view, one or each lens surface 71D is surrounded by the upper surface 71A.

[0085] In a top view, the outer shape of the optical element 70 is rectangular. However, the outer shape of the optical element 70 in a top view does not have to be rectangular. The bottom surface 71B is flat. No lens surface 71D is formed on the bottom surface 71B side of the optical element 70. The shape of the bottom surface 71B is rectangular. However, the shape of the bottom surface 71B does not have to be rectangular.

[0086] In the optical member 70, the portion that overlaps with the lens surface 71D when viewed from above is defined as the lens portion 72A. In the optical member 70, the portion that overlaps with the upper surface 71A when viewed from above is defined as the non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or each of the lens portions 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0087] The optical member 70 may have a plurality of lens surfaces 71D formed in a continuous line in one direction. In a top view, the direction in which the plurality of lens surfaces 71D are aligned is called the lens connection direction. In the illustrated optical member 70, the connection direction is the same direction as the X direction.

[0088] The multiple lens surfaces 71D are formed such that the vertices of each lens surface 71D lie on a straight line. This imaginary line connecting the vertices is parallel to the lower surface 71B of the optical member 70. Note that this parallelism includes a difference of ±5 degrees.

[0089] Some or all of the multiple lens surfaces 71D may have the same curvature, and two or more of these lens surfaces 71D may have the same curvature. All of the multiple lens surfaces 71D may have the same curvature.

[0090] The optical component 70 is translucent. The optical component 70 has a transmittance of 80% or more for the peak wavelength of light incident on it. The optical component 70 may have a translucent region and a non-translucent region (hereinafter referred to as the non-translucent region). In the non-translucent region, the transmittance for the peak wavelength of light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using glass such as BK7, for example.

[0091] Next, the light-emitting device 1 will be described.

[0092] (Light-emitting device 1) In the light-emitting device 1, one or more semiconductor laser elements 20 are arranged on a substrate 11. The one or more semiconductor laser elements 20 are arranged on a first upper surface 11A. The light-emitting device 1 emits light emitted from the one or more semiconductor laser elements 20 to the outside. The one or more semiconductor laser elements 20 may consist of three or more semiconductor laser elements 20. In other words, the light-emitting device 1 may be equipped with three or more semiconductor laser elements 20.

[0093] One or more semiconductor laser elements 20 may include one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B. In the light-emitting device 1, the number of second semiconductor laser elements 20B is greater than the number of first semiconductor laser elements 20A. In other words, the number of one or more second semiconductor laser elements 20B arranged on the substrate 11 is one or more greater than the number of one or more first semiconductor laser elements 20A arranged on the substrate 11. Therefore, one or more second semiconductor laser elements 20B may consist of two or more second semiconductor laser elements 20B.

[0094] In the light-emitting device 1, one or more first semiconductor laser elements 20A emit light of a first color. One or more second semiconductor laser elements 20B emit light of a second color. The light of the first color and the light of the second color may be the same color. The difference between the emission peak wavelength of the light of the first color and the emission peak wavelength of the light of the second color may be 20 nm or less.

[0095] The semiconductor laser elements 20, including one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B, are arranged in a line in one direction. Hereafter, this direction will be referred to as the first direction. In the illustrated light-emitting device 1, the first direction is the same direction as the X direction.

[0096] The first semiconductor laser element 20A and the second semiconductor laser element 20B have the same width in the direction perpendicular to the light-emitting surface 22, in other words, the same width in the direction of the resonator length. Furthermore, the first semiconductor laser element 20A and the second semiconductor laser element 20B have the same external dimensions. Note that "same width" here allows for a difference of up to 30 μm. Also, "same external dimensions" here allows for a difference of up to 10%.

[0097] One or more semiconductor laser elements 20 are arranged on one or more submounts 30. One or more semiconductor laser elements 20 are arranged on the substrate 11 via one or more submounts 30. One or each of the semiconductor laser elements 20 are arranged on the wiring layer 33 of the submount 30.

[0098] Only one semiconductor laser element 20 is placed in each of the 1 or 2 submounts 30. The light-emitting device 1 does not have a submount 30 on which two semiconductor laser elements 20 are placed. However, it may have a submount 30 on which two or more semiconductor laser elements 20 are placed.

[0099] In the light-emitting device 1, one or more reflective members 40 are arranged on the base body 11. The one or more reflective members 40 are arranged on the first upper surface 11A. The one or more reflective members 40 reflect the light emitted from one or more semiconductor laser elements 20. The light reflected by the one or more reflective members 40 travels upward.

[0100] In a top view, the optical axis of the light emitted from one or more semiconductor laser elements 20 is directed onto one or more reflective members 40 along a virtual straight line passing through the light-reflecting surface 41B. When the light-emitting device 1 is equipped with multiple semiconductor laser elements 20, the positions where the optical axis of the light emitted from each semiconductor laser element 20 is directed onto one or more reflective members 40 lie on a single straight line in a top view. The alignment of the optical axis irradiation points on a straight line facilitates optical control.

[0101] In the light-emitting device 1, one or more protective elements 50 are arranged on the substrate 11. The one or more protective elements 50 are arranged on one or more submounts 30. The protective elements 50 arranged on the submounts 30 protect the semiconductor laser element 20 arranged on the submounts 30. One or each of the protective elements 50 are arranged on the wiring layer 33 of the submount 30.

[0102] In the light-emitting device 1, multiple wires 60 are used for the electrical connection of one or more semiconductor laser elements 20. By connecting an appropriate number of wires 60 to the package 10, the semiconductor laser elements 20, or the submount 30, one or more semiconductor laser elements 20 can be electrically connected to the package 10. This allows power to be supplied from an external power supply electrically connected to the package 10 to one or more semiconductor laser elements 20 arranged in the internal space of the package 10.

[0103] The wiring 60 that connects to the package 10 connects to the wiring section 12A1 located in the internal space of the package 10. The multiple wirings 60 include one or more wirings 60 that connect to the wiring section 12A1 provided on the first inner surface 11E1 side, and one or more wirings 60 that connect to the wiring section 12A1 provided on the second inner surface 11E2 side. The first inner surface 11E1 and the second inner surface 11E2 face each other in the first direction.

[0104] The light-emitting device 1 has a current path capable of driving only one or more first semiconductor laser elements 20A out of one or more semiconductor laser elements 20. Hereafter, this current path will be referred to as the first current path. The one or more first semiconductor laser elements 20A are electrically connected in series.

[0105] The light-emitting device 1 has a current path capable of driving only one or more second semiconductor laser elements 20B out of one or more semiconductor laser elements 20. Hereafter, this current path will be referred to as the second current path. The one or more second semiconductor laser elements 20B are electrically connected in series.

[0106] As a result, the light-emitting device 1 can selectively control its operation, including a first drive that emits light only from one or more first semiconductor laser elements 20A, and a second drive that emits light only from one or more second semiconductor laser elements 20B. Furthermore, the light-emitting device 1 can be selectively controlled, including a third drive that emits light from one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0107] When the same optical output as when a single semiconductor laser element 20 is driven at its rated current is achieved by adjusting the output of each of the multiple semiconductor laser elements 20, the power consumption may be higher than when a single semiconductor laser element 20 is driven at its rated current. Therefore, the light-emitting device 1 can reduce the power consumption when adjusting the output of the light emitted from the light-emitting device 1.

[0108] In particular, multiple semiconductor laser elements 20 that emit light of the same color are divided into two or more groups such that each group has a different number of semiconductor laser elements 20. For example, if group 1 consists of N1 semiconductor laser elements 20 and group 2 consists of N2 semiconductor laser elements 20, and N1 ≠ N2, then the optical output of N1 semiconductor laser elements 20, the optical output of N2 semiconductor laser elements 20, and the optical output of N1 + N2 semiconductor laser elements 20 can be achieved solely by selecting the current path. This makes it possible to adjust the optical output with less power consumption than by equally adjusting the optical output of each of the N1 + N2 semiconductor laser elements 20.

[0109] In the light-emitting device 1, a first current path is provided by a plurality of wiring sections 12A1 and a plurality of wirings 60 to drive only one or more first semiconductor laser elements 20A. A second current path is provided by a plurality of wiring sections 12A1 and a plurality of wirings 60 to drive only one or more second semiconductor laser elements 20B. A third current path may be provided by a plurality of wiring sections 12A1 and a plurality of wirings 60 to drive one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0110] Multiple wirings 60 may also be used for the electrical connection of one or more protective elements 50. All wirings 60 provided in the light-emitting device 1 include multiple wirings 60 for electrically connecting one or more semiconductor laser elements 20 to the package 10. Furthermore, all wirings 60 provided in the light-emitting device 1 include multiple wirings 60 for electrically connecting one or more protective elements 50 to the package 10. Furthermore, among the multiple wirings 60 for electrically connecting one or more semiconductor laser elements 20 to the package 10, one or more wirings 60 for electrically connecting one or more protective elements 50 to the package 10 may be included.

[0111] In the light-emitting device 1, the light emitted from one or more semiconductor laser elements 20 is emitted from the top surface 14A of the package 10. Here, the light emitted from one semiconductor laser element 20 is referred to as the light from one element. The light emitted from the light-emitting device 1 includes the light from one or more elements.

[0112] The light from the main portion of one element does not overlap with the light from the main portions of other elements on the upper surface 14A. The light from the main portions of each element does not overlap with each other on the upper surface 14A.

[0113] In the light-emitting device 1, the optical component 70 is fixed to the package 10. The optical component 70 is connected to the package 10. The optical component 70 is bonded to the package 10 via an adhesive. For example, an ultraviolet-curing adhesive can be used as the adhesive.

[0114] The optical element 70 is positioned above the package 10. Light emitted from the top surface 14A enters the optical element 70, is subjected to an optical effect, and then exits from the optical element 70. For example, the optical axes of the light from each element enter different lens surfaces, the light from each element is collimated, and then exits from the optical element 70.

[0115] Next, we will explain the connection configuration of the wiring 60.

[0116] (Connection configuration of the wiring 60 in the light-emitting device 1) Figures 13A to 16B show several connection configurations applicable to the light-emitting device 1. In each connection configuration, one or more first semiconductor laser elements 20A consist of one semiconductor laser element 201, and one or more second semiconductor laser elements 20B consist of three semiconductor laser elements 202, 203, and 204. Note that the configurations consisting of one semiconductor laser element 20 and three semiconductor laser elements 20 are merely examples, and the light-emitting device 1 is not limited to these configurations.

[0117] The light-emitting device 1 has a plurality of semiconductor laser elements 20 and their peripheral parts, and a plurality of wiring sections 12A. For example, the light-emitting device 1 of the first to fourth embodiments has four semiconductor laser elements 20 and their peripheral parts, and four wiring sections 12A. The peripheral parts of the semiconductor laser elements 20 refer to the submount 30 and protective element 50 shown in Figure 12.

[0118] (First connection configuration) Figure 13A is a top view illustrating a first connection configuration of the wiring for the light-emitting device 1. Figure 13B is an electrical circuit diagram corresponding to Figure 13A. In the figures, "+" and "-" indicate the wiring section 12A1 connected to the anode and cathode of the semiconductor laser element 20, respectively.

[0119] The multiple wiring sections 12A1 include a first wiring section 12A11, a second wiring section 12A12, a third wiring section 12A13, and a fourth wiring section 12A14.

[0120] One or more first semiconductor laser elements 20A(201) are electrically connected to a wiring section 12A1 provided on the first inner surface 11E1 side. The semiconductor laser element 201 is electrically connected to the first wiring section 12A11 and the second wiring section 12A12. The semiconductor laser element 201 is not electrically connected to either the third wiring section 12A13 or the fourth wiring section 12A14.

[0121] One or more second semiconductor laser elements 20B (202, 203, 204) are electrically connected to the wiring section 12A1 provided on the second inner surface 11E2 side. The semiconductor laser elements 202, 203, 204 are electrically connected to the third wiring section 12A13 and the fourth wiring section 12A14. The semiconductor laser elements 202, 203, 204 are not electrically connected to either the first wiring section 12A11 or the second wiring section 12A12.

[0122] The multiple wirings 60 include a first wiring 61 joined to the first wiring section 12A11 and electrically connected to the first semiconductor laser element 20A, and a second wiring 62 joined to the second wiring section 12A12 and electrically connected to the first semiconductor laser element 20A. The multiple wirings 60 also include a third wiring 63 joined to the third wiring section 12A13 and electrically connected to the second semiconductor laser element 20B, and a fourth wiring 64 joined to the fourth wiring section 12A14 and electrically connected to the second semiconductor laser element 20B.

[0123] The three semiconductor laser elements 202, 203, and 204 are connected in series. In addition, one or more first semiconductor laser elements 20A are positioned at a distance in the first direction from one or more second semiconductor laser elements 20B.

[0124] The first wiring 61 connects to the semiconductor laser element 201 or the submount 30 on which the semiconductor laser element 201 is located. The second wiring 62 connects to the submount 30 on which the semiconductor laser element 201 is located or to the semiconductor laser element 201. The third wiring 63 connects to the semiconductor laser element 202 or the submount 30 on which the semiconductor laser element 202 is located. The fourth wiring 64 connects to the submount 30 on which the semiconductor laser element 204 is located or to the semiconductor laser element 204.

[0125] The multiple wirings 60 do not include wirings 60 that electrically connect to both one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0126] Thus, in the first connection configuration, the light-emitting device 1 can drive the first semiconductor laser element 20A without driving the second semiconductor laser element 20B by passing current only through the first current path, drive the second semiconductor laser element 20B without driving the first semiconductor laser element 20A by passing current only through the second current path, and drive both the first semiconductor laser element 20A and the second semiconductor laser element 20B by passing current through both the first and second current paths.

[0127] (Second connection method) Figure 14A is a top view illustrating a second wiring configuration for the light-emitting device 1. Figure 14B is an electrical circuit diagram corresponding to Figure 14A. In the figures, "+" and "-" indicate the wiring section 12A1 connected to the anode and cathode of the semiconductor laser element 20, respectively.

[0128] The multiple wiring sections 12A1 include a first wiring section 12A11, a second wiring section 12A12, and a third wiring section 12A13. The package 10 may also have a fourth wiring section 12A14.

[0129] One or more first semiconductor laser elements 20A(201) are electrically connected to a wiring section 12A1 provided on the first inner surface 11E1 side. The semiconductor laser element 201 is electrically connected to the first wiring section 12A11 and the second wiring section 12A12. The semiconductor laser element 201 is electrically connected to a wiring section 12A1 provided on the second inner surface 11E2 side. The semiconductor laser element 201 is electrically connected to a third wiring section 12A13.

[0130] One or more second semiconductor laser elements 20B (202, 203, 204) are electrically connected to the wiring section 12A1 provided on the first inner surface 11E1 side and the wiring section 12A1 provided on the second inner surface 11E2 side. The semiconductor laser elements 202, 203, 204 are electrically connected to the first wiring section A11 and the third wiring section 12A13. The semiconductor laser elements 202, 203, 204 are electrically connected to the second wiring section 12A12 and the third wiring section 12A13.

[0131] The multiple wirings 60 include a first wiring 61 joined to the first wiring section 12A11 and electrically connected to the first semiconductor laser element 20A, and a second wiring 62 joined to the second wiring section 12A12 and electrically connected to the first semiconductor laser element 20A. The multiple wirings also include a third wiring 63 joined to the third wiring section 12A13 and electrically connected to the second semiconductor laser element 20B. The first wiring section 12A11 is further electrically connected to the second semiconductor laser element 20B. The second wiring section 12A12 is further electrically connected to the second semiconductor laser element 20B. The third wiring section 12A13 is further electrically connected to the first semiconductor laser element 20A.

[0132] One or more first semiconductor laser elements 20A can be driven by a first current path with the first wiring section 12A11 as the anode and the second wiring section 12A12 as the cathode. Furthermore, one or more second semiconductor laser elements 20B can be driven by a second current path with the third wiring section 12A13 as the anode and the first wiring section 12A11 as the cathode. Additionally, one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements can be driven by a third current path with the third wiring section 12A13 as the anode and the second wiring section 12A12 as the cathode. Thus, in the second connection configuration, a third current path is established, and the positive and negative polarities of the electrodes provided by the first wiring section 12A11 are reversed between the first and second current paths.

[0133] The three semiconductor laser elements 202, 203, and 204 are connected in series. In addition, one or more first semiconductor laser elements 20A are positioned at a distance in the first direction from one or more second semiconductor laser elements 20B.

[0134] The first wiring 61 connects to the submount 30 on which the semiconductor laser element 201 is located. The second wiring 62 connects to the semiconductor laser element 201. The third wiring connects to the submount 30 on which the semiconductor laser element 204 or semiconductor laser element 202 is located. The multiple wirings 60 include a fourth wiring 64 that electrically connects the adjacent first semiconductor laser element 20A and the second semiconductor laser element 20B.

[0135] The first wiring 61 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The second wiring 62 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The third wiring 63 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The fourth wiring 64 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B.

[0136] (Third connection method) Figure 15A is a top view illustrating a third wiring configuration for the light-emitting device 1. Figure 15B is an electrical circuit diagram corresponding to Figure 15A. In the figures, "+" and "-" indicate the wiring section 12A1 connected to the anode and cathode of the semiconductor laser element 20, respectively.

[0137] The multiple wiring sections 12A1 include a first wiring section 12A11, a third wiring section 12A13, and a fourth wiring section 12A14. The package 10 may also have a second wiring section 12A12. Furthermore, while the positions of the first wiring section 12A11 to the fourth wiring section 12A14 are standardized in relation to other connection configurations, from a technical standardization standpoint, any wiring section 12A1 other than the first wiring section 12A11 can also be considered as the first wiring section.

[0138] For example, if the wiring 60 connected to the first semiconductor laser element 20A and the wiring 60 connected to the submount 30 on which the first semiconductor laser element 20A is arranged are made common with the second connection configuration, then the third wiring section 12A13 and the fourth wiring section 12A14 in the third connection configuration correspond to the first wiring section 12A11 and the second wiring section 12A12 in the second connection configuration, respectively. Therefore, if the first wiring section 12A11 in the third connection configuration is designated as the third wiring section, the third wiring section 12A13 as the first wiring section, and the fourth wiring section 12A14 as the second wiring section, then common technical elements can be identified between the second and third connection configurations. The same can be said if the first inner surface 11E1 and the second inner surface 11E2 are reversed. Based on this premise, any content described in the second connection configuration that also applies to the third connection configuration will not be explained again.

[0139] In the third connection configuration, the semiconductor laser element 201 is not electrically connected to the wiring section 12A1 provided on the first inner surface 11E1 side.

[0140] In the third connection configuration, the semiconductor laser elements 202, 203, and 204 are not electrically connected to the third wiring section 12A13.

[0141] In the third connection configuration, the multiple wirings 60 include a fourth wiring 64 that is joined to the fourth wiring section 12A14 and electrically connects to the second semiconductor laser element 20B. Furthermore, the multiple wirings 60 do not include wiring 60 that electrically connects the adjacent first semiconductor laser element 20A and the second semiconductor laser element 20B.

[0142] The third connection configuration differs from the other configurations in that the fourth wiring section 12A14 is used not only as a wiring section 12A1 to which wiring 60 is joined that is electrically connected to the first semiconductor laser element 20A but not to the second semiconductor laser element 20B, but also as a wiring section 12A1 to which wiring 60 is joined that is electrically connected to the second semiconductor laser element 20B but not to the first semiconductor laser element 20A.

[0143] In the third connection configuration, one or more second semiconductor laser elements 20B can be driven by a second current path in which the first wiring section 12A11 is the anode and the fourth wiring section 12A14 is the cathode. Furthermore, the multiple wirings 60 do not include any wirings 60 that are electrically connected to both one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0144] In the third connection configuration, one or more first semiconductor laser elements 20A are arranged between two second semiconductor laser elements 20B. The multiple wirings 60 include a fifth wiring 65 that electrically connects the two second semiconductor laser elements 20B (semiconductor laser elements 203 and 204) that sandwich the semiconductor laser element 201.

[0145] Although various embodiments of the present invention have been described above, the light-emitting device 1 according to the present invention is not strictly limited to the light-emitting device 1 of each embodiment. In other words, the present invention is not limited to the external form and structure of the light-emitting device 1 disclosed in each embodiment. The present invention can be applied without requiring all components to be present. For example, if some of the components of the light-emitting device 1 disclosed in the embodiment are not described in the claims, a degree of design freedom for those skilled in the art is permitted, such as substitution, omission, modification of shape, or change of material for those components, and the invention described in the claims is then specified to be applicable.

[0146] Through the information described herein so far, the following technical matters are disclosed: (Section 1) One or more first semiconductor laser elements, One or more second semiconductor laser elements, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements arranged on a substrate, Multiple wiring sections provided on the base, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are electrically connected to the plurality of wiring sections, Equipped with, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements emit light of the same color. The number of the one or more second semiconductor laser elements arranged on the substrate is one or more greater than the number of the one or more first semiconductor laser elements arranged on the substrate. The plurality of wiring sections and the plurality of wirings, A first current path that drives only the one or more first semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A second current path that drives only the one or more second semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A third current path for driving the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, It is provided. Light-emitting device. (Section 2) The aforementioned substrate is The first inner surface and, The first inner surface and the second inner surface facing the first direction, An upper surface provided between the first inner surface and the second inner surface in a top view, It has, The aforementioned plurality of wiring sections are The first wiring section provided on the first inner surface side, The second wiring section provided on the first inner surface side, The third wiring section provided on the second inner surface side, The fourth wiring section provided on the second inner surface side, Includes, The aforementioned multiple wires are, A first wiring is joined to the first wiring section and electrically connects to the first semiconductor laser element, A second wiring is joined to the second wiring section and electrically connects to the first semiconductor laser element, A third wiring is joined to the third wiring section and electrically connected to the second semiconductor laser element, A fourth wiring is joined to the fourth wiring section and electrically connected to the second semiconductor laser element, including The light-emitting device described in item 1. (Section 3) The aforementioned substrate is The first inner surface and, The first inner surface and the second inner surface facing the first direction, An upper surface provided between the first inner surface and the second inner surface in a top view, It has, The aforementioned plurality of wiring sections are The first wiring section provided on the first inner surface side, The second wiring section provided on the first inner surface side, The third wiring section provided on the second inner surface side, Includes, The aforementioned multiple wires are, A first wiring is joined to the first wiring section and electrically connects to the first semiconductor laser element, A second wiring is joined to the second wiring section and electrically connects to the first semiconductor laser element, A third wiring is joined to the third wiring portion and electrically connects to the first semiconductor laser element or the second semiconductor laser element, including The light-emitting device described in item 1. (Section 4) The aforementioned plurality of wirings do not include wiring that electrically connects to both the one or more first semiconductor laser elements and the one or more second semiconductor laser elements. The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged in the first direction, A light-emitting device as described in item 2 or 3. (Section 5) The third wiring is electrically connected to the first semiconductor laser element and the second semiconductor laser element. The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged in the first direction, The light-emitting device described in item 3. (Section 6) The one or more second semiconductor laser elements are composed of two or more of the second semiconductor laser elements and are connected in series. A light-emitting device as described in item 2 or 3. (Section 7) The one or more first semiconductor laser elements are arranged at a position away from the one or more second semiconductor laser elements in the first direction. A light-emitting device as described in item 2 or 3. (Section 8) The one or more second semiconductor laser elements are composed of two or more of the second semiconductor laser elements. The one or more first semiconductor laser elements are arranged between two of the second semiconductor laser elements. A light-emitting device as described in item 2 or 3. [Industrial applicability]

[0147] The light-emitting device 1 described in the embodiment can be used in a projector. In other words, a projector can be considered one application of the present invention. However, the present invention is not limited to this and can be used in various applications such as lighting, exposure, in-vehicle headlights, head-mounted displays, and backlights for other displays. [Explanation of Symbols]

[0148] 1. Light-emitting device 10 packages 11 Base 11A 1st top surface 11B Bottom side 11C 2nd top surface 11D External surface 11E Inside surface 11E1 1st inner surface 11E2 2nd inner surface 11th floor step section 11F1 First step section 11F2 Second step section 11G top surface 11H side 11M base 11N frame 12A, 12A1, 12A2 wiring section 12A11 1st wiring section 12A12 2nd wiring section 12A13 3rd wiring section 12A14 4th wiring section 13A Joint Pattern 14 Lid 14A Top 14B Bottom 14C side 20 Semiconductor laser elements 20A First Semiconductor Laser Element 20B Second Semiconductor Laser Element 21A Top 21B Bottom side 21C side 22 Light exit surface 30 Submount 31A Top 31B Bottom surface 31C side 32A circuit board 32B Upper metal member 32C Lower metal component 33 Wiring layer 40 Reflective material 41A Bottom 41B Light reflective surface 50 protective elements 51A Top 51B Bottom side 51C side 60 Wiring 61 1st wiring 62 2nd wiring 63 3rd wiring 64 4th wiring 70 Optical components (lens components) 71A Top 71B Bottom side 71C side 71D Lens surface (optical surface) 72A Lens section 72B Non-lens section

Claims

1. One or more first semiconductor laser elements, One or more second semiconductor laser elements, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements arranged on a substrate, Multiple wiring sections provided on the base, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are electrically connected to the plurality of wiring sections by a plurality of wirings, Equipped with, The one or more first semiconductor laser elements and the one or more second semiconductor laser elements emit light of the same color. The number of the one or more second semiconductor laser elements arranged on the substrate is one or more greater than the number of the one or more first semiconductor laser elements arranged on the substrate. The plurality of wiring sections and the plurality of wirings, A first current path that drives only the one or more first semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, A second current path that drives only the one or more second semiconductor laser elements among the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, It is provided. Light-emitting device.

2. The aforementioned substrate is The first inner surface and, The first inner surface and the second inner surface facing the first direction, An upper surface provided between the first inner surface and the second inner surface in a top view, It has, The aforementioned plurality of wiring sections are The first wiring section provided on the first inner surface side, The second wiring section provided on the first inner surface side, The third wiring section provided on the second inner surface side, The fourth wiring section provided on the second inner surface side, Includes, The aforementioned multiple wires are, A first wiring is joined to the first wiring portion and electrically connected to the first semiconductor laser element, A second wiring is joined to the second wiring section and electrically connected to the first semiconductor laser element, A third wiring is joined to the third wiring section and electrically connected to the second semiconductor laser element, A fourth wiring is joined to the fourth wiring section and electrically connected to the second semiconductor laser element, including, The light-emitting device according to claim 1.

3. The aforementioned substrate is The first inner surface and, The first inner surface and the second inner surface facing the first direction, An upper surface provided between the first inner surface and the second inner surface in a top view, It has, The aforementioned plurality of wiring sections are The first wiring section provided on the first inner surface side, The second wiring section provided on the first inner surface side, The third wiring section provided on the second inner surface side, Includes, The aforementioned multiple wires are, A first wiring is joined to the first wiring portion and electrically connected to the first semiconductor laser element, A second wiring is joined to the second wiring section and electrically connected to the first semiconductor laser element, A third wiring is joined to the third wiring portion and electrically connects to the first semiconductor laser element or the second semiconductor laser element, including, The light-emitting device according to claim 1.

4. The aforementioned plurality of wirings do not include wiring that electrically connects to both the one or more first semiconductor laser elements and the one or more second semiconductor laser elements. The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged in a line in the first direction. The light-emitting device according to claim 2 or 3.

5. The third wiring is electrically connected to the first semiconductor laser element and the second semiconductor laser element. The one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged in a line in the first direction. The light-emitting device according to claim 3.

6. The one or more second semiconductor laser elements are composed of two or more of the second semiconductor laser elements and are connected in series. The light-emitting device according to claim 2 or 3.

7. The one or more first semiconductor laser elements are arranged at a position away from the one or more second semiconductor laser elements in the first direction. The light-emitting device according to claim 2 or 3.

8. The one or more second semiconductor laser elements are composed of two or more of the second semiconductor laser elements. The one or more first semiconductor laser elements are arranged between two of the second semiconductor laser elements. The light-emitting device according to claim 2 or 3.

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