Film deposition apparatus, film deposition method, and method for manufacturing electronic devices

Abstract

This technology provides a way to suppress the discrepancy between the desired film deposition position on the substrate and the actual film deposition position. [Solution] A film deposition apparatus having an alignment means for aligning a substrate and a mask using a substrate mark provided on the substrate and a mask mark provided on the mask, an adhesion means for bringing the aligned substrate and mask into close contact, and a film deposition means for depositing a film on the substrate via the mask in close contact with the substrate, wherein the film deposition apparatus uses an imaging means for photographing at least one of the substrate mark and the mask mark after film deposition by the film deposition means has started.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

Background Art

[0002] Flat panel display devices such as organic EL display devices and liquid crystal display devices are used. For example, an organic EL display device includes a multilayer organic EL element in which a functional layer having a light-emitting layer, which is an organic layer that causes light emission, is formed between two opposing electrodes. The functional layer and the electrode layer of the organic EL element are formed by attaching a film forming material to a substrate such as glass through a mask in a chamber of a film forming apparatus. In order to improve the quality of the panel to be manufactured, it is required to accurately align (position adjustment) and adhere the substrate and the mask before attaching the film forming material to the substrate.

[0003] Patent Document 1 (Japanese Patent Application Laid-Open No. 2019-083311) discloses that before adhering the substrate and the mask, the substrate and the marks of the mask are photographed using a camera to align the substrate and the mask. Further, Patent Document 2 (Japanese Patent Application Laid-Open No. 2011-190536) discloses moving a patterned mask relative to a substrate while also moving a film forming source.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] It is known that, especially when using an evaporation source that generates high heat as the film deposition source, the mask and substrate may undergo thermal expansion within the film deposition apparatus. As a result, even if the marks on the substrate and mask are photographed with a camera before deposition and the substrate and mask are aligned, the positional relationship between the mask and substrate may shift due to the effects of thermal expansion during deposition, and the actual film deposition location may deviate from the desired planned deposition location.

[0006] This invention has been made in view of the above problems. The object of this invention is to provide a technique for suppressing the discrepancy between the desired film deposition position on the substrate and the actual film deposition position that may occur after alignment of the substrate and the mask. [Means for solving the problem]

[0007] This invention employs the following configuration: An alignment means for aligning the substrate and the mask using substrate marks provided on the substrate and mask marks provided on the mask, A contact means for bringing the substrate and the mask, which have been aligned by the alignment means, A film-forming means for forming a film on the substrate via the mask which is in close contact with the substrate by a pre-contacting means, A film deposition apparatus having, The system includes a photographing means for photographing at least one of the substrate mark and the mask mark after the film formation by the aforementioned film formation means has begun. This is a film deposition apparatus characterized by the following features.

[0008] The present invention also employs the following configuration: namely, A film deposition method using a film deposition apparatus comprising an alignment means, an adhesion means, a film deposition means, and an imaging means, The alignment means includes an alignment step of aligning the substrate and the mask using substrate marks provided on the substrate and mask marks provided on the mask, The aforementioned adhesion means includes an adhesion step of bringing the substrate and the mask into close contact after the alignment, The film-forming means includes a film-forming step in which, after bringing the substrate and the mask into close contact, a film is formed on the substrate via the mask, It has, The imaging means captures at least one of the substrate mark and the mask mark after the film formation process has started. This is a film formation method characterized by the following: [Effects of the Invention]

[0009] The present invention provides a technique for suppressing the discrepancy between the desired film deposition position on the substrate and the actual film deposition position, which may occur after alignment of the substrate and the mask. [Brief explanation of the drawing]

[0010] [Figure 1] Schematic diagram of an electronic device manufacturing line including the film deposition apparatus of Example 1. [Figure 2] Cross-sectional view showing the internal configuration of the film deposition apparatus in Example 1. [Figure 3] Perspective view showing the configuration for supporting the substrate in Example 1 [Figure 4] Plan view showing the arrangement of the substrate and substrate mark in Example 1 [Figure 5] Plan view showing the arrangement of the mask and mask marks in Example 1 [Figure 6] This figure shows the relationship between the substrate mark and mask mark and the imaging area in Example 1. [Figure 7] Flowchart illustrating the correction in Example 1 [Figure 8] Diagram illustrating the expansion and deformation of the substrate S in Example 1. [Figure 9] Diagram illustrating the calculation of the displacement amount in Example 1 [Figure 10] Flowchart illustrating the correction in Example 2 [Figure 11] A diagram illustrating the configuration of an electronic device. [Figure 12] A diagram illustrating the conventional ideal film deposition process. [Figure 13] A diagram illustrating the effect of thermal expansion on film formation. [Figure 14] Figure for explaining the state of correcting the influence of thermal expansion [Figure 15] Flow chart for explaining the correction of thermal expansion assumed in the prior art

Mode for Carrying Out the Invention

[0011] Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments merely exemplarily show the preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Also, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus are not intended to limit the scope of the present invention only to those unless specifically described.

[0012] The present invention is suitable for a film forming apparatus that forms a thin film of a film forming material on the surface of a film forming object such as a substrate by vapor deposition or sputtering. The present invention can be regarded as a film forming apparatus, a film forming method, and a control method for a film forming apparatus. The present invention can also be regarded as a manufacturing apparatus for an electronic device, its control method, and a manufacturing method for an electronic device. The present invention can also be regarded as a program for causing a computer to execute an alignment method, a film forming method, and a control method, and a storage medium storing the program. The storage medium may be a non-temporary storage medium readable by a computer.

[0013] The present invention is preferably applicable to a film deposition apparatus that forms a thin film with a desired pattern on the surface of a substrate via a mask. Any substrate material can be used, such as glass, resin, metal, or silicon. Any film deposition material can be used, such as organic materials or inorganic materials (metals, metal oxides). In the following description, "substrate" includes substrate materials on which one or more films have already been deposited. The technology of the present invention is typically applied to manufacturing apparatuses for electronic devices and optical components. In particular, it is suitable for organic electronic devices such as organic EL displays equipped with organic EL elements and organic EL display devices using them. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0014] <Example 1> [Device configuration] (Manufacturing line for electronic devices) Figure 1 is a schematic plan view of the configuration of an electronic device manufacturing line. Such a manufacturing line can be called a film deposition system, including film deposition equipment. Here, we will describe a manufacturing line for an organic EL display. When manufacturing an organic EL display, a substrate of a predetermined size is brought into the manufacturing line, and after the organic EL and metal layers are deposited, post-processing steps such as cutting the substrate are performed.

[0015] The film deposition cluster 1 of the manufacturing line includes a transport chamber 130 located in the center, and film deposition chambers 110 and a mask stock chamber 120 arranged around the transport chamber 130. The film deposition chamber 110 includes a film deposition apparatus and performs the film deposition process on the substrate S. The mask stock chamber 120 stores masks before and after use. Multiple film deposition chambers 110 may be equipped with different film deposition materials so that multiple films can be formed on the substrate in one film deposition cluster 1. Alternatively, the same film deposition material may be equipped in multiple film deposition chambers 110 so that film deposition can be performed on multiple substrates S in parallel.

[0016] A transport robot 140 installed in the transport chamber 130 loads substrates S and masks M into and out of the transport chamber 130. The transport robot 140 is, for example, a robot with a robot hand attached to a multi-jointed arm for holding substrates S and masks M. Each chamber, such as the deposition chamber 110, mask stock chamber 120, transport chamber 130, pass chamber 150, buffer chamber 160, and swivel chamber 170, is maintained in a high vacuum state during the manufacturing process of organic EL display panels.

[0017] The deposition cluster 1 includes a pass chamber 150 that transports substrates S flowing from the upstream side in the substrate transport direction to a transport chamber 130, and a buffer chamber 160 that transports substrates S after the deposition process in the transport chamber 130 to other deposition clusters downstream. When the transport robot 140 of the transport chamber 130 receives a substrate S from the pass chamber 150, it transports it to one of the multiple deposition chambers 110. The transport robot 140 also receives the substrate S after the deposition process is complete from the deposition chamber 110 and transports it to the buffer chamber 160. Further upstream of the pass chamber 150 and further downstream of the buffer chamber 160, a turning chamber 170 is provided to change the direction of the substrate S. The manufacturing line may be arranged by connecting as many such deposition clusters 1 as necessary, depending on the number of layers to be stacked on the substrate.

[0018] (Film forming equipment) Figure 2 is a schematic cross-sectional view showing the configuration of the film deposition apparatus. Each of the multiple film deposition chambers 110 is equipped with a film deposition apparatus 108. The film deposition apparatus 108 performs a series of film deposition processes, including the transfer of substrates S and masks M to the transport robot 140, adjustment of the relative positions of the substrates S and masks M (alignment), fixing of the masks and substrates S, and film deposition.

[0019] In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used, but the present invention is not limited thereto. In the XYZ Cartesian coordinate system, when the substrate S is on the horizontal plane during film formation... When fixed parallel to the (XY plane), the longitudinal direction of the rectangular substrate S, which has a long side and a short side, is defined as the X direction, and the short side direction as the Y direction. The rotation angle around the Z axis is represented by θ.

[0020] The film deposition apparatus 108 has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. Inside the vacuum chamber 200 are a substrate support unit 210, a mask M, a mask stand 228, a cooling plate 230, and an evaporation source 240.

[0021] The substrate support unit 210 is a substrate support means that supports the substrate S received from the transport robot 140. The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. As the mask M, for example, a metal mask is used, which has a structure in which a metal foil with an opening pattern is stretched over a highly rigid frame. The mask stand 228, which has a frame-like structure, is a mask support means on which the mask M is placed. In this embodiment, after the substrate S and the mask M are aligned, the substrate S is placed on the mask and film deposition is performed.

[0022] The cooling plate 230 is a plate-shaped member that, during film deposition, contacts the surface of the substrate S opposite to the surface in contact with the mask M, thereby suppressing the temperature rise of the substrate S during film deposition. By cooling the substrate S with the cooling plate 230, alteration and degradation of organic materials are suppressed. The cooling plate 230 can also cool the mask M, which is in contact with the substrate S via the substrate S. The cooling plate 230 may also serve as a magnet plate to improve the adhesion between the substrate S and the mask M during film deposition by attracting the mask M with magnetic force. In addition, to improve the adhesion between the substrate S and the mask M, the substrate support unit 210 may hold both the substrate S and the mask M.

[0023] The evaporation source 240 consists of a crucible, which is a container for the deposition material, a heater for heating the crucible, an openable and closable shutter for controlling the scattering of the deposition material, and an evaporation rate monitor. The film deposition apparatus 108 may be equipped with a drive mechanism for moving the evaporation source 240. By operating the drive mechanism, the evaporation source 240 moves while deposition is performed, making the film thickness on the substrate uniform. The drive mechanism may be configured to retract the evaporation source 240 to a predetermined position (home position) when not in use, and to move the evaporation source 240 when deposition begins. Since the film deposition apparatus in this embodiment is a deposition apparatus, an evaporation source 240 that heats and evaporates the film deposition material (deposition material) is used as the film deposition source. However, the film deposition source is not limited to the evaporation source 240, and may be, for example, a sputtering apparatus using a sputtering target. The evaporation source 240 is a film deposition means that deposits a film on the substrate S via the mask M after the substrate S and the mask M are in close contact. Furthermore, the evaporation source 240 and the control unit 270 together can be considered as a film-forming means.

[0024] On the upper outer surface of the vacuum chamber 200, a substrate Z actuator 250, a clamp Z actuator 251, and a cooling plate Z actuator 252 are provided. Each actuator consists of, for example, a motor and a ball screw, or a motor and a linear guide. An alignment stage 280 is also provided on the upper outer surface of the vacuum chamber 200.

[0025] The substrate Z actuator 250 is a driving means for raising and lowering the entire substrate support unit 210 in the Z-axis direction. The clamp Z actuator 251 is a driving means for opening and closing the clamping mechanism of the substrate support unit 210. The cooling plate Z actuator 252 is a driving means for raising and lowering the cooling plate 230.

[0026] The alignment stage 280 moves the substrate S in the XY direction and rotates it in the θ direction to change its position relative to the mask M. The alignment stage 280 is an alignment means that performs the alignment process, which is the positioning of the substrate S and the mask M. The alignment stage 280 is connected to and fixed to the vacuum chamber 200 by a chamber fixing part 281, XYθ It includes an actuator unit 282 for movement and a connection unit 283 that connects to the substrate support unit 210. The alignment stage 280 and the substrate support unit 210 may be considered together as an alignment means. Alternatively, the alignment stage 280 and the substrate support unit 210 may be further considered as an alignment means by adding a control unit 270.

[0027] The actuator unit 282 may be an actuator in which X actuators, Y actuators, and θ actuators are stacked. Alternatively, a UVW type actuator in which multiple actuators cooperate may be used. Regardless of the type of actuator unit 282, it is driven according to the control signals transmitted from the control unit 270, moving the substrate S in the X and Y directions and rotating it in the θ direction. The control signals indicate the amount of movement of each XYθ actuator in the case of a stacked type actuator, and the amount of movement of each UVW actuator in the case of a UVW type actuator.

[0028] The alignment stage 280 moves the substrate support unit 210 in the X, Y, and θ directions. In this embodiment, the configuration is used to adjust the position of the substrate S, but it is sufficient to adjust the relative positional relationship between the substrate S and the mask M in a plane. Therefore, a configuration that adjusts the position of the mask M, or a configuration that adjusts the positions of both the substrate S and the mask M, would also be acceptable.

[0029] Referring to the perspective view in Figure 3, an example of the configuration of the substrate support unit 210 will be described. The substrate support unit 210 has a support frame 301 provided with a plurality of support members 300 that support each side of the substrate S, and a clamp member 303 provided with a plurality of pressing members 302. The plurality of pressing members 302 and the plurality of support members 300 sandwich and fix the substrate S between them. A pair of support members 300 and pressing members 302 constitute one clamping mechanism 305. However, the number and arrangement of the clamping mechanism 305 are not limited to this. Alternatively, instead of the clamping method, the substrate S may be placed on the support members. Or, an electrostatic chuck that attracts the substrate S by electrostatic force may be used.

[0030] The alignment stage 280 transmits driving force to the substrate support unit 210, which holds the substrate S, thereby fine-tuning the relative position of the substrate S with respect to the mask M. During Z-direction movement of the substrate S, the substrate Z actuator 250 drives the substrate support unit 210 to raise and lower the substrate S. This brings the substrate S and the mask M closer together or further apart. By further lowering the substrate S, the substrate S and the mask M can be brought into close contact, so the substrate Z actuator 250 is a means for bringing the substrate S and the mask M into close contact. It can also be considered that the substrate Z actuator 250 and the control unit 270 together are a means for bringing the substrate S into close contact. During XYθ movement of the substrate S, the alignment stage 280 moves the substrate S translationally in the XY direction or rotates it in the θ direction. During alignment, the substrate S moves within the XY plane on which the substrate is placed, and this XY plane is approximately parallel to the plane on which the mask M is placed. In other words, when the substrate S moves in the XYθ direction, the distance between the substrate S and the mask M in the Z direction does not change, but the position of the substrate S changes in the XY plane. This causes the substrate S and the mask M to be aligned in the plane.

[0031] Multiple cameras are provided on the upper outer side of the vacuum chamber 200 as imaging means, which generate image data by performing optical imaging. The multiple cameras include four first cameras 260 (alignment cameras) whose imaging areas are the four corners of the substrate S and mask M, and two second cameras 261 (additional cameras, cameras for imaging during film deposition) whose imaging areas are the central parts of two sides in the Y-axis direction (longitudinal direction) of the substrate S and mask M. The first cameras 260 are used for aligning the substrate S and mask M. The second cameras 261 are added after film deposition has started (after film deposition has begun) to photograph the process of film deposition of the substrate marks and mask marks. However, the first cameras 260 may also be used for imaging during film deposition in addition to the second cameras 261. Also, the second cameras 261 may be used for alignment in addition to the first cameras 260.

[0032] The first camera 260 and the second camera 261 perform imaging through a window provided on the top plate of the vacuum chamber 200. In this embodiment, the alignment of the substrate S and the mask M is a one-stage alignment using the first camera 260. However, a two-stage alignment may be performed, consisting of a rough alignment and a fine alignment. When performing a two-stage alignment, it is preferable to provide the film deposition apparatus 108 with a camera for rough alignment that has a low resolution but a wide field of view, and a camera for fine alignment that has a narrow field of view but a high resolution.

[0033] The control unit 270 obtains positional information of the first substrate mark 103 and the first mask mark 223 by analyzing image data captured by the first camera 260. The control unit 270 calculates the distance and angle between the first substrate mark 103 and the first mask mark 223 and determines whether they are within a predetermined tolerance range. If the distance and angle exceed the predetermined tolerance range, it calculates the amount of movement required to move the substrate S in-plane. Then, it calculates the control amount of the alignment stage 280 based on the amount of movement and moves the substrate S in-plane.

[0034] The control unit 270 performs various control processes, including controlling the operation of each actuator in the actuator unit 282, controlling the camera 261's image capture and analyzing image data, controlling the loading and unloading of the substrate S and mask M and aligning them, controlling the film deposition source, controlling the film deposition process, and other various control steps. The control unit 270 can be configured by a computer having, for example, a processor, memory, storage, and I / O. In this case, the functions of the control unit 270 are realized by the processor executing a program stored in memory or storage. A general-purpose personal computer may be used as the computer, or an embedded computer or PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by circuits such as ASICs or FPGAs. Note that a control unit 270 may be provided for each film deposition apparatus, or one control unit 270 may control multiple film deposition apparatuses.

[0035] Referring to Figures 4 to 6, the relationship between the marks placed on the substrate S and the mask M and the imaging area of ​​each camera will be explained. Figure 4 shows the arrangement of substrate marks provided on the substrate S. The first substrate marks 103 in this embodiment are provided at the four corners of the substrate S, and if it is necessary to distinguish them by location, they are denoted as 103a to 103d, with subscripts a to d. The first substrate marks 103 in this embodiment include two types: adjacent marks (shown as a cross shape in the figure) that are positioned adjacent to the first mask mark 223 when correctly aligned, and angle marks (shown as a rectangle in the figure) that are mainly used to calculate the angle deviation. If it is necessary to distinguish between them, the adjacent marks are denoted as 103a1, 103b1, etc., and the angle marks are denoted as 103a2, 103b2, etc. However, it is not always necessary to use two types of substrate marks; a configuration in which either one of the substrate marks and the mask mark are in a predetermined positional relationship is also acceptable.

[0036] The circuit board S also has two second circuit board marks 104 located in the center of the long side (the side in the longitudinal direction) of the circuit board S. When it is necessary to distinguish between the two, they are denoted as 104a and 104b. The second circuit board marks 104 also include two types: adjacent marks (104a1, 104b1) and angle marks (104a2, 104b2).

[0037] Figure 5 shows the arrangement of mask marks on the mask M. The mask M has a frame 221, which is a mask frame made of a highly rigid metal material, on which a foil 222 made of metal foil is stretched. The foil 222 has openings according to the film deposition pattern. The frame 221 is provided with struts shaped to follow the cutting lines when the panel is cut apart. This is also beneficial, and as a result, an improvement in strength can be expected.

[0038] In this embodiment, the first mask marks 223 are provided at the four corners of the mask M, and subscripts a to d are added if it is necessary to distinguish them by location. The mask M also has two second mask marks 224 (224a, 224b) provided in the center of the long side of the mask M.

[0039] Figure 6 is a transparent view showing the substrate S and mask M superimposed. In this embodiment, the substrate S and mask M are the same size in plan view, but this is not limited to this. In this embodiment, four first cameras 260 are placed, one above each of the four corners of the substrate S and mask M, and are distinguished by subscripts 260a to 260d as needed. In addition, one second camera 261 (261a, 261b) is placed above the center of the long side of the substrate S and mask M.

[0040] The dashed circles indicate the imaging area of ​​each camera. The imaging area of ​​the first camera 260a to 260d is the first imaging area 263a to 263d. The imaging area of ​​the second camera 261a to 261b is the second imaging area 264a to 264b. When the substrate S and mask M are correctly aligned, as shown in the figure, the first imaging area 263 contains one adjacent mark and angle mark of the first substrate mark 103, and one first mask mark 223. The second imaging area 264 contains one adjacent mark and angle mark of the second substrate mark 104, and one second mask mark 224.

[0041] In this embodiment, the first substrate mark 103 and the second substrate mark 104 are formed on the substrate by photolithography. The first mask mark 223 is formed on the frame 221 of the mask M by machining. The second mask mark 224 is formed on the foil 222 portion of the mask M by printing. However, the method and position of mark formation are not limited to these and can be appropriately selected depending on the material, etc. The shape and size of the marks can also be appropriately set depending on the camera performance and image analysis capabilities.

[0042] However, the number and location of alignment marks, as well as the number, location, and type of cameras, are not limited to this example.

[0043] (The effects of thermal expansion and an example of a conventional offset correction) The inventors of this application have found that there is room for improvement in conventional film deposition methods. Specifically, even when the substrate S and mask M are aligned before deposition, there is a problem in that the actual deposition position deviates from the desired planned deposition position due to thermal expansion of at least one of the substrate S and mask M during deposition.

[0044] This study investigates the effect of thermal expansion of at least one of the substrate and mask during film formation on the film formation process. Figure 12(a) is a transmission view showing the relationship between the marks on the substrate S and mask M and the imaging area of ​​the camera. The figure shows that the substrate S and mask M are the same size and are aligned and overlapping. The substrate S has substrate marks 103 (103a to 103d), and the mask M has mask marks 223 (223a to 223d). Four cameras are capturing the imaging area 263 (263a to 263d). The mask M is divided into a frame 221 and a foil 222 by the inner edge 221a of the frame 221. The foil 222 is divided by a boundary line 222b, shown by a dotted line, into an outer margin area 222a and an inner pattern formation area 222c, which has an opening through which the film formation material passes.

[0045] Figure 12(b) shows the completed substrate S when no thermal expansion occurs in the substrate S or mask M during film formation. The surface of the completed substrate S has a pattern formation region 222c A film 11 is formed according to the opening.

[0046] On the other hand, Figure 13(a) shows how the substrate S expanded significantly in the lower right direction on the plane of the paper due to heating from the evaporation source during film formation. Such directionally biased expansion can occur, for example, due to the relative positional relationship between the heat source (film formation source) and the substrate S. In this case, even if a precise alignment as shown in Figure 12(a) is performed before film formation, as film formation progresses and thermal expansion increases, the positional relationship between the substrate mark 103 and the mask mark 223 within the imaging area 263 will no longer meet the predetermined criteria, as shown in Figure 13(a).

[0047] Figure 13(b) shows the substrate S(b) and film 11(b) when deposition is performed in this thermally expanded state. In this hypothetical example, the mask M does not undergo thermal expansion, so the position and size of the pattern formation region 222c remain unchanged. Consequently, as the substrate S(b) expands downward and to the right, the relative position of the film 11(b) on the substrate S(b) shifts. Figure 13(c) shows the substrate S(b) from Figure 13(b) after it has cooled. The size of the substrate S(c) has shrunk due to cooling and returned to its original size. At this time, the position where the film 11(c) is formed is shifted from the desired planned film formation position.

[0048] Thus, differences in the thermal expansion coefficients of the substrate S and the mask M can cause misalignment of the thin film formed on the substrate S. Furthermore, if the expansion tendency differs from one deposition chamber to another, misalignment of the patterns may occur between the layers formed on the substrate. In other words, even if alignment is performed as shown in Figure 12(a), ideal film deposition as shown in Figure 12(b) is not guaranteed. Due to the effects of thermal expansion as shown in Figure 13(a), film deposition as shown in Figures 13(b) to 13(c) may occur.

[0049] The inventors of this application focused on offset correction to reduce the effects of such thermal expansion. The problems expected to occur with conventional offset correction are described below. The following diagrams, with reference to the drawings, illustrate the effects of thermal expansion that may occur under the assumption of film deposition, and the flowchart for explaining the offset correction for that thermal expansion, as expected from the state of the art. The inventors have found through their studies that the thermal expansion coefficient of the substrate S tends to be higher than that of the mask M. However, the present invention can also be applied even when the thermal expansion coefficient of the mask M is higher than that of the substrate S.

[0050] Figure 14 illustrates the corrections assumed under conventional technology. Figure 14(a) shows the same substrate S(c) as shown in Figure 13(c), but the position of the film 11(c) is shifted from the planned film deposition position. Figure 14(b) shows the same substrate S(i) as shown in Figure 12(b), with an ideal film 11(i) deposited, assuming no thermal expansion occurs. The flowchart in Figure 15, described below, shows a method for reducing the effects of thermal expansion under conventional technology.

[0051] First, in step S101, the transport robot 140 carries the mask M into the deposition chamber 110. In step S102, the transport robot 140 carries the substrate S into the deposition chamber 110. In step S103, the substrate Z actuator 250 brings the distance between the substrate S and the mask M in the Z direction closer to a predetermined alignment distance. In step S104, the first camera 260 captures the first imaging area 263 and detects the first substrate mark 103 and the first mask mark 223 by image analysis. In step S105, the control unit 270 calculates the amount of movement of the substrate S in each XYθ direction based on the positional relationship between the first substrate mark 103 and the first mask mark 223.

[0052] Then, in step S106, the control unit 270 corrects the amount of movement based on the offset amount stored in the memory or other storage unit. This offset amount will be described later. If the offset amount has not been calculated, no correction is performed. In step S107, the alignment stage 280 moves the substrate S within the noodle using a control amount that has been corrected by the offset amount. Then, the substrate Z actuator 250 places the substrate S on the mask M and makes it adhere to it. In step S108, the evaporation source 240 starts heating to evaporate the film deposition material and form a film 11 corresponding to the opening of the mask M. In this process, expansion of the substrate S occurs due to the effect of heating. In step S109, the transport robot 104 removes the film-deposited substrate S from the film deposition chamber 110.

[0053] In step S110, the control unit 270 determines whether a predetermined number of substrates S have been processed using a certain mask M. If the predetermined number has not been reached (NO), the process returns to step S102 to process the next substrate S. If the predetermined number has been reached (YES), the process proceeds to step S111, and the transport robot 104 removes the mask M from the deposition chamber 110. In step S112, the control unit 270 determines whether the entire deposition process is complete. If it is complete (YES), the process ends. If it is not complete, the process continues.

[0054] Steps S113 to S115 are processes for calculating the offset amount. In other words, in this hypothetical example, the correction calculation is redone each time the mask M is replaced. In step S113, the control unit 270 uses the first camera 260 to image the actually film-deposited substrate S(c) shown in Figure 14(a) and obtains positional information of the region where the film 11(c) is formed. For example, if the four corners of the film 11(c) are within the imaging areas of each of the four first cameras 260, the range of the film 11(c) may be determined based on the positions of the four corners. Alternatively, a camera capable of capturing the entire substrate S(c) may be used. The control unit 270 analyzes the captured image and calculates the coordinates (A,B) of the center of the range of the film 11(c) based on the coordinates of the four corners.

[0055] In step S114, the control unit 270 calculates the amount of deviation of the film deposition pattern from the assumed position, which in this assumed example is (AC,BD). In step S115, the control unit 270 calculates the offset amount of the substrate S during alignment based on the amount of deviation, and in this assumed example, it gives an offset (CA,DB) to move the substrate S to the lower right to compensate for the deviation to the upper left (arrow F). In this assumed example, for simplicity, the coordinates (C,D) of the center of the film 11(i) in the ideal film deposition pattern shown in Figure 14(b) were compared with the coordinates (A,B) of the center when the film was actually deposited, but it is also preferable to calculate the offset amount considering more complex deformations. In that case, the coordinates of the four corners of the actually formed film 11(c) and the deformation of the edges are analyzed and reflected in the XY direction offset amount. It is also preferable to measure and calculate the rotational component of the substrate S during the expansion process and reflect it in the θ direction offset amount.

[0056] (Problems with the hypothetical example) In the above example based on conventional technology, the film deposition pattern formed on the substrate S was analyzed at the time of mask M replacement to calculate the amount of displacement, which was then reflected in the offset amount during alignment. This attempted to reduce the positional displacement of the film deposition even when the relative position of the substrate S and mask M changed from the measurement taken before film deposition. However, since the timing of mask M replacement was after the deposition of a predetermined number of substrates S had been completed, time elapsed before the amount of positional displacement could be reflected in the offset amount, and there were cases where the correction could not be made in time. Furthermore, since the film deposition pattern could only be analyzed after the deposition was completed in the above flow, it was not possible to measure the thermal expansion that actually occurred during film deposition, leaving room for improvement in the accuracy of the offset.

[0057] Here, it is also conceivable to modify the above example flow to measure the positional displacement of the film deposition pattern each time the substrate S is processed. Specifically, for example, this would involve analyzing the film deposition pattern on the substrate after step S109 of the flow in Figure 15 and reflecting this in the offset amount of the next substrate S. However, in this case, imaging, analysis, and offset would be performed each time a substrate S is deposited. Because each calculation process is required, there is a problem in that the cycle time becomes long. Furthermore, even in this case, it is not possible to measure the thermal expansion during film formation.

[0058] (Offset correction in this embodiment) As a result of the inventor's diligent investigation of the above problems, it was found that by imaging and analyzing the marks on the substrate S and mask M after the start of film deposition, it becomes possible to grasp the positional shift during film deposition, enabling more real-time and accurate offset correction. The offset correction in this embodiment is described below. The relationship between the marks placed on the substrate S and mask M in this embodiment and the imaging area of ​​each camera is as described above using Figures 4 to 6.

[0059] Figure 7 is a flowchart showing the process in this embodiment. The same steps as in the hypothetical example above are given the same step numbers to simplify the explanation. Steps S101 to S108 involve loading the mask M and substrate S into the deposition chamber 110, pre-deposition alignment (imaging at the alignment distance and in-plane movement), and heat deposition in a contact state.

[0060] The imaging means provided by the film deposition apparatus is configured to enable imaging even after film deposition has started. The camera used for imaging after film deposition has started may be the same as the one used for alignment, or it may be a different camera. In addition, both the alignment camera and the camera other than the alignment camera may perform imaging during film deposition. In step S201, the first cameras 260a to 260d image the first imaging regions 263a to 263d, and the second cameras 261a and 261b image the second imaging regions 264a and 264b. Image recognition processing is then performed on the images of each imaging region to detect substrate marks and mask marks.

[0061] In step S202, the control unit 270 analyzes the position of each mark and calculates the amount of deviation between the relative positions of the marks captured during alignment before film deposition and the relative positions of the marks captured during film deposition. It then calculates the degree of thermal expansion and deformation of the substrate S and the mask M. Figure 8 shows the state of the substrate S and mask M during film deposition in this embodiment. Here, the substrate S deforms due to thermal expansion, mainly expanding in the upper left direction, and also undergoing a slight rightward rotation.

[0062] Furthermore, if the evaporation source is gradually heated after the start of film deposition, or if the evaporation source is scanned within the deposition chamber to deposit a film over a wide area, the state may change depending on the timing of imaging. In such cases, methods such as imaging after a sufficient amount of time has elapsed since the start of film deposition, or calculating the average positional displacement by taking multiple images, may be used.

[0063] Figure 9 illustrates an example of the analysis method used by the control unit 270 to calculate the displacement amount. Figures 9(a) to 9(d) are enlarged views of the images captured in the first imaging regions 263a to 263d, respectively. Figures 9(e) and 9(f) are enlarged views of the images captured in the second imaging regions 264a and 264b, respectively.

[0064] Taking Figure 9(a) as an example, the first substrate mark 103a is positioned such that the angle mark 103a2 lies at the end of the extended vertical line of the cross shape of the adjacent mark 103a1. Then, a line is drawn from the angle mark 103a2 that intersects with the extended horizontal line of the adjacent mark 103a1 at a 45° angle. The intersection of these two lines is designated as target Ta. If offset correction is not performed, target Ta is the target position where the first mask mark 223a will be during alignment. Similarly, targets Tb~Td are the target positions of the first mask marks 223b~223d during alignment when offset correction is not performed. That is, if there is no offset correction and the alignment is performed with high precision, the positions of the first mask marks 223a~223d will coincide with targets Ta~Td. Therefore, in the case of Figure 9, the position of the first mask marks 223a~223d The amount of deviation from the acquisition position is indicated by arrows Va to Vd.

[0065] In this embodiment, the second substrate mark 104 and the second mask mark 224 can be used not only for offset correction but also for alignment. If offset correction is not performed in this case, targets Te and Tf become the target positions of the second mask marks 224a and 224b, respectively. In this case, the amount of deviation of the second mask marks 224a and 224b from their target positions is indicated by the arrows Ve and Vf.

[0066] Next, we will explain how the control unit 270 calculates the offset amount and updates the value stored in the memory unit in step S203. In one example, the control unit 270 analyzes the targets Ta to Tf and the positions of each mask mark in Figures 9(a) to 9(f). This allows the control unit 270 to calculate the displacement amount (Va to Vf) that reflects the degree of expansion and rotation angle of the substrate S. Then, the control unit 270 moves the substrate S during alignment in the opposite direction to the expansion direction of the substrate S and calculates an XY offset amount that compensates for the calculated displacement amount. In addition, it calculates a θ offset amount that compensates for rotation during thermal expansion.

[0067] The method by which the control unit 270 calculates the offset amount is not limited to the above. For example, the control unit 270 calculates the coordinates of the target Ta to Td where the first mask mark should be located. Then, it calculates the coordinates of the intersection of the line connecting Ta and Td and the line connecting Tb and Tc as the centroid of the substrate S. Next, it calculates the position of the center of the straight line connecting the second mask marks 224a and 224b as the centroid of the mask M. Then, it calculates the offset amount to compensate for the difference between the coordinates of the centroid of the substrate S and the coordinates of the centroid of the mask M. In addition, it is acceptable as long as the camera can photograph at least one of the substrate marks and the mask marks and use this for the calculation of the offset amount by the control unit 270.

[0068] Next, in step S109, the transport robot 140 removes the substrate S from the chamber. Then, in step S110, it is determined whether to continue film deposition with the current mask. If it is to continue (YES), the process returns to S102 and the next substrate S is loaded. The offset amount calculated in S203 above is used when depositing film on this next substrate S. In other words, in this embodiment, the offset amount is calculated sequentially for each substrate S, so alignment that reflects the state inside the deposition chamber in real time can be performed, improving the accuracy of film deposition. In this embodiment, the value calculated from the previous substrate S was used as the offset amount to be applied to a given substrate S. However, it is also possible to use the average value obtained from multiple measurements before a given substrate (for example, three measurements from three substrates before a given substrate (Nth substrate) to the previous measurement (N-3 to N-1 substrates)). Furthermore, if calculating the offset amount takes time, it is not necessary to calculate it for all substrates S, but rather to calculate it every few substrates.

[0069] Next, in step S111, the mask is removed. If processing of all substrates S is not complete (S112=NO), the mask is replaced and processing continues. If processing is complete (S112=YES), the entire process is terminated.

[0070] The types, number, and positions of substrate and mask marks used to understand thermal expansion and deformation in the above description are merely examples and can be appropriately determined according to the configuration of the device and the target alignment accuracy. For example, it is not always necessary to use two types of substrate marks, adjacent marks and angle marks; a one-to-one correspondence between substrate marks and mask marks may be established in each imaging area. Also, during alignment, either the substrate S or the mask M may be moved, or both may be moved. The alignment offset amount may be applied to either the substrate S or the mask M, or both.

[0071] Furthermore, in the above explanation, the first mask mark 223 is set on the frame 221 of the mask M. In addition, the second mask mark 224 is provided on the foil 222 of the mask M. Even if the mark is formed only on the frame, as in a typical mask mark configuration, the offset amount can still be calculated. However, by also providing a mask mark on the foil 222, the thermal expansion and deformation of the foil 222 can be directly measured. As a result, even if the expansion rate and deformation of the frame 221 and the foil 222 differ due to differences in their materials, it becomes possible to accurately grasp the degree of thermal expansion and deformation and reflect it in the offset amount, providing a further advantage.

[0072] (effect) According to the processing flow of this embodiment described above, imaging is started after film deposition begins to determine the amount of misalignment and calculate the offset amount. Therefore, thermal expansion and deformation are measured for each substrate, rather than each time the mask is changed. As a result, even if the amount of misalignment changes over time, highly real-time offset correction can be performed. This allows the offset amount to be changed as needed, even when processing a large number of substrates (for example, dozens) with a single mask, and the effects of changes in the amount of misalignment over time can be suppressed. Furthermore, this embodiment can reflect the thermal expansion and deformation that actually occur during film deposition, rather than after the film deposition is completed. Therefore, even if at least one of the substrate and the mask undergoes thermal expansion during film deposition after alignment in the film deposition apparatus, the discrepancy between the desired film deposition position and the actual film deposition position can be reduced. Moreover, since there is no need to take separate measurements after film deposition, the cycle time is not increased.

[0073] <Example 2> This embodiment describes specific examples of imaging during film deposition, calculation of displacement, and calculation of offset. The apparatus configuration of this embodiment is basically the same as that of Embodiment 1, and the same reference numerals are used for components that are the same as those in Embodiment 1, and their descriptions are omitted.

[0074] Figure 10 is a flowchart illustrating the process in this embodiment. This figure starts from the point where the process corresponding to step S107 in Figure 7 has been completed, and shows a flowchart to explain the method of calculating the offset correction amount from a different perspective than in Embodiment 1.

[0075] In step S301, the control unit 270 starts the first camera 260 and the second camera 261. From this point onward, image data from each camera is input to the control unit 270 as it is captured. In step S302, the control unit 270 determines whether the corresponding substrate marks and mask marks are detected in the images captured by each camera. Ideally, the alignment process shown in the flow of Figure 7 should place each mark within the imaging area, but because misalignment may occur for some reason, this determination is made in S301 to S302. If all marks are detected, the process proceeds to step S303. On the other hand, if any marks are not detected, the control unit attempts detection again. Before attempting re-detection, the control unit 270 may perform position adjustments of the substrate S using the substrate Z actuator 250 or alignment stage 280, or send alarm notifications to the user.

[0076] In step S303, the evaporation source 240 starts heating, and film deposition begins. In this flow, it is assumed that this heating causes expansion of at least one of the substrate S and the mask M, resulting in a shift in the coordinates of the marks. Furthermore, it is assumed that the film deposition in this flow is a process in which the evaporation source 240 scans within the plane at the bottom of the deposition chamber 110 to form a film over a wide area. In step S304, the control unit 270 calculates the coordinate values ​​of each mark (first substrate mark 103, first mask mark 223, second substrate mark 104, second mask mark 224) from the images captured by the first camera 260 and the second camera 261.

[0077] In step S305, the control unit 270 calculates the amount of displacement of each mark and stores it in the memory unit. The amount of displacement is, for example, the coordinate values ​​of the marks in the image captured during alignment and this step The coordinate values ​​of the marks in the captured image at the time of step P may be calculated by comparing them with the coordinate values ​​of the marks. In step S306, the control unit 270 determines whether the amount of displacement of each mark is less than a predetermined threshold, which is a predetermined tolerance range, or greater than or equal to a predetermined threshold. If it is within the tolerance range (less than the threshold), the process proceeds to step S307 and the film deposition continues.

[0078] On the other hand, if the misalignment at any mark is outside the acceptable range (above the threshold), the process proceeds to step S308 to notify the user of a warning. The warning notification can be given by any method, such as an image display, a lamp, or sound. Next, in step S309, the film deposition scan is temporarily stopped. This is expected to allow the cooling plate 230 to function and the temperature conditions in the film deposition chamber to change, bringing the misalignment back within the acceptable range and allowing film deposition to resume. Alternatively, a step to determine the amount of misalignment may be added after this step, and the process may be terminated if the misalignment does not subside. In step S310, the control unit 270 determines whether all areas of the substrate S on which the film should be formed have been deposited. If the determination is NO, the film deposition scan continues, and the calculation and determination of the amount of misalignment continues at predetermined intervals. On the other hand, if film deposition is complete (S310=YES), the process proceeds to step S311 to calculate the offset amount to be applied to the next substrate S. For example, methods for calculating the offset amount include using the maximum value of the misalignment amounts calculated multiple times, or using the average value. According to this flow, similar to Example 1, the effect of thermal expansion during film deposition can be calculated as an offset for the next film deposition, and if the amount of deviation exceeds the allowable limit, film deposition can be temporarily suspended or a warning can be displayed, thereby reducing the effect of thermal expansion of at least one of the substrate and mask on film deposition.

[0079] <Variation> In each of the above embodiments, by imaging the marks during film formation rather than after completion to understand the amount of positional displacement and calculate the offset amount, it was possible to perform highly real-time offset correction that reflects the effect of heating. In particular, by adding a second camera 261 that images a second mask mark 224 provided on the foil portion of the mask M, in addition to the first camera 260 that images a first mask mark 223 provided on the frame of the mask M, which is commonly used in alignment, it became possible to accurately understand the deformation of the foil and use it to calculate the offset amount. The presence of such a second camera 261 can be used not only to understand deformation during film formation but also to understand the displacement when the substrate S and the mask M are in close contact.

[0080] For example, in addition to alignment at the alignment distance as shown in S103 to S106 in Figure 7, pre-deposition measurements may be performed in which, in S107, when the substrate is placed on the mask M and in close contact, imaging is taken again to determine whether any displacement has occurred due to the contact operation. In such pre-deposition measurements, by using the image captured by the added second camera 261, it is possible to grasp the deformation of the foil 222 rather than the frame 221. In other words, even if the foil 222 stretched on the frame 221 deforms in a way that is different from the frame 221 in some parts, this can be grasped by analyzing the image from the second camera 261, and it becomes possible to take measures such as redoing the contact or notifying the user of the abnormality.

[0081] <Method of manufacturing electronic devices> Next, an example of a method for manufacturing an electronic device using the film deposition apparatus according to this embodiment will be described. Below, the configuration of an organic EL display device is shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0082] First, let me explain the organic EL display device that we manufacture. Figure 11(a) is an overall view of the organic EL display device 700, and Figure 11(b) shows the cross-sectional structure of a single pixel.

[0083] As shown in Figure 11(a), the display area 701 of the organic EL display device 700 has multiple pixels 702, each equipped with multiple light-emitting elements, arranged in a matrix. Further details will be explained later. Each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes. Here, a pixel refers to the smallest unit that enables the display of a desired color in the display area 701. In the organic EL display device according to this embodiment, a pixel 702 is composed of a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B, which emit different light. A pixel 702 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as there is at least one color.

[0084] Figure 11(b) is a schematic partial cross-sectional view of the BB line in Figure 11(a). Pixel 702 consists of multiple light-emitting elements, each light-emitting element having a first electrode (anode) 704, a hole transport layer 705, one of the light-emitting layers 706R, 706G, or 706B, an electron transport layer 707, and a second electrode (cathode) 708 on the substrate 703. Of these, the hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 are organic layers. In this embodiment, the light-emitting layer 706R is a red-emitting organic EL layer, the light-emitting layer 706G is a green-emitting organic EL layer, and the light-emitting layer 706B is a blue-emitting organic EL layer. The light-emitting layers 706R, 706G, and 706B are formed in patterns corresponding to the red, green, and blue-emitting light-emitting elements (sometimes described as organic EL elements), respectively.

[0085] Furthermore, the first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for multiple light-emitting elements 702R, 702G, and 702B, or they may be formed for each light-emitting element. In addition, an insulating layer 709 is provided between the first electrode 704 and the second electrode 708 to prevent short circuits caused by foreign matter. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0086] In Figure 11(b), the hole transport layer 705 and the electron transport layer 707 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers including hole blocking layers and electron blocking layers. Furthermore, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0087] Next, we will specifically describe an example of a manufacturing method for an organic EL display device.

[0088] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which the first electrode 704 is formed are prepared.

[0089] An acrylic resin is formed on a substrate 703 on which the first electrode 704 is formed by spin coating. The acrylic resin is then patterned by lithography to form an insulating layer 709 in the area where the first electrode 704 is formed. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0090] A substrate 703 patterned with an insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held in place by the adhesive member. It is then transported to a first organic material deposition apparatus, and after inversion, a hole transport layer 705 is deposited as a common layer on the first electrode 704 of the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, since the hole transport layer 705 is formed to a size larger than the display area 701, a high-resolution mask is not required.

[0091] Next, the substrate 703, on which the hole transport layer 705 has been formed, is brought into the second organic material deposition apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and the substrate 703 A red-emitting light-emitting layer 706R is formed in the area where the red-emitting element is to be placed.

[0092] Similar to the deposition of the light-emitting layer 706R, a light-emitting layer 706G that emits green light is deposited using a third organic material deposition apparatus, and then a light-emitting layer 706B that emits blue light is deposited using a fourth organic material deposition apparatus. After the deposition of light-emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is deposited over the entire display area 701 using a fifth deposition apparatus. The electron transport layer 707 is formed as a common layer for the three colored light-emitting layers 706R, 706G, and 706B.

[0093] The substrate, with the electron transport layer 707 formed on it, is moved using a metallic vapor deposition material deposition apparatus to deposit the second electrode 708.

[0094] The material is then moved to a plasma CVD apparatus to deposit a protective layer 710, completing the deposition process on the substrate 703. After inversion, the adhesive material is peeled off the substrate 703, separating it from the substrate carrier. The organic EL display device 700 is then completed after cutting.

[0095] From the time the substrate 703, which has the insulating layer 709 patterned on it, is loaded into the film deposition apparatus until the deposition of the protective layer 710 is completed, exposure to an atmosphere containing moisture or oxygen may cause the light-emitting layer, which is made of organic EL material, to deteriorate due to moisture or oxygen. Therefore, in this embodiment, the loading and unloading of substrates between film deposition apparatuses is performed under a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0096] 103: First substrate mark, 104: Second substrate mark, 223: First mask mark, 224: Second mask mark, 250: Substrate Z actuator, 240: Evaporation source, 260: First camera, 261: Second camera, 270: Control unit, 280: Alignment stage, M: Mask, S: Substrate

Claims

1. An alignment means for aligning the substrate and the mask using substrate marks provided on the substrate and mask marks provided on the mask, A contact means for bringing the substrate and the mask, which have been aligned by the alignment means, A film-forming means for forming a film on the substrate via the mask which is in close contact with the substrate by the aforementioned adhesion means, A film deposition apparatus having, The system includes a photographing means for photographing at least one of the substrate mark and the mask mark after the film formation by the aforementioned film formation means has begun. A film deposition apparatus characterized by the following features.

2. The system includes a control means that analyzes the image captured by the aforementioned imaging means, calculates the offset amount used by the alignment means, and controls the alignment means. The film deposition apparatus according to feature 1.

3. The alignment means adjusts the relative positions of the substrate and the mask so that the substrate mark and the mask mark are in a predetermined positional relationship during the alignment process. The film deposition apparatus according to feature 2.

4. The film deposition apparatus according to claim 3, characterized in that the control means controls the alignment means during the alignment process so that the coordinate values ​​of the substrate mark and the coordinate values ​​of the mask mark are in a predetermined positional relationship.

5. The imaging means, with the substrate and the mask in close contact, photographs at least one of the mask mark and the substrate mark, which are provided in the area inside the mask frame of the mask. The film deposition apparatus according to feature 1.

6. The control means controls the film deposition means to stop film deposition when the amount of misalignment between the substrate and the mask, calculated from the image captured by the imaging means, exceeds a predetermined threshold. The film deposition apparatus according to feature 3.

7. The control means controls the film deposition means to restart film deposition when the amount of misalignment falls below a predetermined threshold after it has exceeded a predetermined threshold. The film deposition apparatus according to feature 6.

8. A film deposition method using a film deposition apparatus comprising an alignment means, an adhesion means, a film deposition means, and an imaging means, The alignment means includes an alignment step of aligning the substrate and the mask using substrate marks provided on the substrate and mask marks provided on the mask, The aforementioned adhesion means includes an adhesion step of bringing the substrate and the mask into close contact after the alignment, The film-forming means includes a film-forming step in which, after bringing the substrate and the mask into close contact, a film is formed on the substrate via the mask, It has, The imaging means captures at least one of the substrate mark and the mask mark after the film formation process has started. A film formation method characterized by the following:

9. The aforementioned film deposition apparatus further includes a control means, The control means further includes a control step of analyzing the image captured by the imaging means, calculating the offset amount used by the alignment means, and controlling the alignment means. The film formation method according to feature 8.

10. In the alignment process, the alignment means adjusts the relative positions of the substrate and the mask so that the substrate mark and the mask mark are in a predetermined positional relationship during the alignment process. The film formation method according to feature 9.

11. The film deposition method according to claim 10, characterized in that, in the alignment step, the control means controls the alignment means so that the coordinate values ​​of the substrate mark and the coordinate values ​​of the mask mark are in a predetermined positional relationship during the alignment process.

12. In the film formation process, the imaging means, with the substrate and the mask in close contact, photographs at least one of the mask mark and the substrate mark, which are located in the area inside the mask frame of the mask. The film formation method according to feature 8.

13. In the film deposition process, the control means controls the alignment means to stop film deposition if the misalignment amount between the substrate and the mask, calculated from the image captured by the imaging means, exceeds a predetermined threshold. The film formation method according to feature 9.

14. In the film deposition process, the control means controls the alignment means to restart film deposition when the amount of misalignment falls below a predetermined threshold after it has exceeded a predetermined threshold. The film formation method according to feature 13.

15. A method for forming an electronic device using the film formation method described in claim 8. A method for manufacturing an electronic device characterized by the following:

Images