Nozzle, substrate processing apparatus, and substrate processing method

Abstract

Efficiently mixing a fluid and a treatment solution in liquid treatment using a mixed fluid. [Solution] The nozzle is a nozzle that mixes and discharges a fluid containing pressurized pure water vapor or mist with a processing liquid containing at least sulfuric acid. The nozzle comprises a first discharge port, a second discharge port, and an outlet passage. The first discharge port discharges the fluid. The second discharge port discharges the processing liquid. The outlet passage communicates with the first and second discharge ports and discharges the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. In addition, the first or second discharge port is positioned offset from the central axis of the outlet passage in a plan view.

Description

Technical Field

[0001] The present disclosure relates to a nozzle, a substrate processing apparatus, and a substrate processing method.

Background Art

[0002] In the manufacturing process of semiconductor devices, a technique is known in which an object to be removed, such as a resist film, is removed from a substrate by supplying a processing liquid to the substrate such as a semiconductor wafer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently mixing a fluid and a processing liquid in liquid processing using a mixed fluid of a fluid and a processing liquid.

Means for Solving the Problems

[0005] A nozzle according to an aspect of the present disclosure is a nozzle that mixes and discharges a fluid containing pressurized pure water vapor or mist and a processing liquid containing at least sulfuric acid. The nozzle includes a first discharge port, a second discharge port, and a guiding path. The first discharge port discharges the fluid. The second discharge port discharges the processing liquid. The guiding path communicates with the first discharge port and the second discharge port, and guides out a mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Further, the first discharge port or the second discharge port is arranged to face a position deviated from the central axis of the guiding path in a plan view.

Effects of the Invention

[0006] According to this disclosure, in liquid treatment using a mixed fluid of a fluid and a treatment liquid, the fluid and the treatment liquid can be efficiently mixed. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment. [Figure 2] Figure 2 is a schematic side view of the substrate processing apparatus according to the first embodiment. [Figure 3] Figure 3 is a cross-sectional view of the nozzle according to the first embodiment, obtained by cutting it with a plane perpendicular to the longitudinal direction. [Figure 4] Figure 4 is a cross-sectional view taken along the line IV-IV shown in Figure 3. [Figure 5] Figure 5 is a cross-sectional view taken along the VV line shown in Figure 3. [Figure 6] Figure 6 is a schematic plan view of the nozzle according to the first embodiment, viewed from below. [Figure 7] Figure 7 is a flowchart showing the processing steps performed by the substrate processing apparatus according to the first embodiment. [Figure 8] Figure 8 is a cross-sectional view of the nozzle according to the second embodiment, obtained by cutting it with a plane perpendicular to the longitudinal direction. [Figure 9] Figure 9 is a cross-sectional view taken along the line IX-IX shown in Figure 8. [Figure 10] Figure 10 is a cross-sectional view taken along the line XX shown in Figure 8. [Figure 11] Figure 11 is a schematic plan view of the nozzle according to the second embodiment, viewed from below. [Figure 12] Figure 12 is a cross-sectional view of a nozzle according to Modification 1 of the First Embodiment, cut by a plane perpendicular to the longitudinal direction. [Figure 13] Figure 13 is a cross-sectional view of a nozzle according to a modified example 2 of the first embodiment, cut by a plane perpendicular to the longitudinal direction. [Figure 14] Figure 14 is a flowchart showing the procedure for the SPM processing according to Modification 2 of the First Embodiment. [Figure 15]Figure 15 is a cross-sectional view of a nozzle according to Modification 1 of the second embodiment, cut by a plane perpendicular to the longitudinal direction. [Modes for carrying out the invention]

[0008] The following describes in detail, with reference to the drawings, embodiments for carrying out the nozzle, substrate processing apparatus, and substrate processing method according to this disclosure (hereinafter referred to as "embodiments"). However, this disclosure is not limited by these embodiments. Furthermore, each embodiment can be combined as appropriate, provided that the processing content is not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant descriptions are omitted.

[0009] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not require strict adherence to "constant," "orthogonal," "perpendicular," or "parallel" conditions. In other words, each of the above expressions allows for deviations, for example, in manufacturing accuracy or installation accuracy.

[0010] Furthermore, in the drawings referenced below, for the sake of clarity, mutually orthogonal X, Y, and Z axis directions are sometimes defined, and a Cartesian coordinate system is shown with the positive Z axis as the vertically upward direction. Also, the direction of rotation with the vertical axis as the center of rotation is sometimes referred to as the θ direction.

[0011] In the semiconductor device manufacturing process, a resist film is formed in a predetermined pattern on a substrate such as a semiconductor wafer. This resist film is then used as a mask to perform processes such as etching and ion implantation on the target film. After processing, the unwanted resist film is removed from the wafer.

[0012] As a method for removing a resist film, SPM treatment is used. The SPM treatment is performed by supplying a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution obtained by mixing sulfuric acid and hydrogen peroxide solution to the resist film. In addition, in this SPM treatment, it has been studied to use a mixed fluid of pressurized pure water (deionized water) vapor (hereinafter referred to as "vapor") and SPM solution.

[0013] In the following embodiments, a substrate processing apparatus that can efficiently mix vapor and SPM solution in the SPM treatment using a mixed fluid of vapor and SPM solution will be described.

[0014] Note that the substrate processing apparatus according to the present disclosure can also be applied to liquid treatments other than SPM treatment. Specifically, the substrate processing apparatus according to the present disclosure can be applied to liquid treatments using a treatment liquid containing at least sulfuric acid.

[0015] Examples of the "treatment liquid containing at least sulfuric acid" other than the SPM solution include, for example, a treatment liquid that reacts (temperature rises or the etchant increases) when mixed with sulfuric acid, specifically, dilute sulfuric acid (a mixed solution of sulfuric acid and water), a mixed solution of sulfuric acid and ozone water, and the like. Further, the "treatment liquid containing at least sulfuric acid" may be sulfuric acid.

[0016] (First Embodiment) <Configuration of Substrate Processing Apparatus> First, the configuration of the substrate processing apparatus according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment. FIG. 2 is a schematic side view of the substrate processing apparatus according to the first embodiment. In FIG. 2, the second supply mechanism 105 and the nozzle cleaning mechanism 106 are shown omitted.

[0017] As shown in Figures 1 and 2, the substrate processing apparatus 1 comprises a chamber 101, a substrate holding section 102, a cup section 103, a first supply mechanism 104, a second supply mechanism 105, and a nozzle cleaning mechanism 106. The substrate processing apparatus 1 also comprises a vapor supply section 201, an SPM supply section 202, a rinse liquid supply section 203, and a displacement liquid supply section 204. This substrate processing apparatus 1 removes a resist film formed on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as "wafer W").

[0018] Conventionally, SPM treatment is known as a method for removing resist films. SPM treatment is performed by supplying a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution, obtained by mixing sulfuric acid and hydrogen peroxide, to the resist film.

[0019] The efficiency of removing the resist film can be improved by increasing the temperature of the SPM solution. One way to increase the temperature of the SPM solution is to increase the temperature of sulfuric acid. However, increasing the temperature of sulfuric acid requires improving the heat resistance and pressure resistance of the piping through which the sulfuric acid flows, which places a heavy burden on the hardware. Another option is to change the mixing ratio of sulfuric acid and hydrogen peroxide, increasing the proportion of hydrogen peroxide. However, increasing the proportion of hydrogen peroxide makes it easier for fumes and bumping to occur. Heating the SPM solution on the wafer W with an infrared heater is also an option, but there are challenges, for example, in terms of temperature stability.

[0020] Therefore, in the substrate processing apparatus 1, pressurized pure water (deionized water) vapor (hereinafter referred to as "vapor") is mixed with the SPM liquid. This allows the temperature of the SPM liquid to be suitably increased.

[0021] Chamber 101 houses the substrate holding section 102, the cup section 103, the first supply mechanism 104, and the second supply mechanism 105. A Fun Filter Unit (FFU) 111 that forms a downflow within the chamber 101 is provided on the ceiling of the chamber 101 (see Figure 2).

[0022] The substrate holding unit 102 comprises a main body 121 with a larger diameter than the wafer W, a plurality of gripping parts 122 provided on the upper surface of the main body 121, a support member 123 that supports the main body 121, and a drive unit 124 that rotates the support member 123. The number of gripping parts 122 is not limited to those shown in the figure.

[0023] The substrate holding portion 102 holds the wafer W by gripping the peripheral edge of the wafer W using a plurality of gripping portions 122. As a result, the wafer W is held horizontally, slightly separated from the upper surface of the main body portion 121. As described above, a resist film is formed on the surface (upper surface) of the wafer W.

[0024] In this example, a substrate holding unit 102 that grips the peripheral edge of the wafer W using multiple gripping units 122 is given. However, the substrate processing apparatus 1 may also be configured to include a vacuum chuck that holds the back surface of the wafer W by suction, instead of the substrate holding unit 102.

[0025] The cup portion 103 is positioned to surround the substrate holding portion 102. At the bottom of the cup portion 103, a drain port 131 for discharging the processing liquid supplied to the wafer W to the outside of the chamber 101 and an exhaust port 132 for exhausting the atmosphere inside the chamber 101 are formed.

[0026] The first supply mechanism 104 includes a nozzle 141, a first arm 142 extending horizontally and supporting the nozzle 141 from above, and a first swivel and lifting mechanism 143 that swivels and raises the first arm 142. The first swivel and lifting mechanism 143 allows the first arm 142 to move the nozzle 141 between a processing position above the wafer W and a standby position outside the wafer W.

[0027] The nozzle 141 is a bar nozzle that extends linearly along the horizontal direction. The nozzle 141 has a length approximately equal to the radius of the wafer W. When positioned in the processing location, the longitudinal tip of the nozzle 141 is positioned above the center of the wafer W, and the longitudinal base of the nozzle 141 is positioned above the peripheral edge of the wafer W.

[0028] Nozzle 141 is connected to vapor supply unit 201 via vapor supply passage 211. Nozzle 141 is also connected to SPM supply unit 202 via SPM supply passage 221. Vapor supply unit 201 supplies vapor, which is pressurized pure water (deionized water), to nozzle 141 via vapor supply passage 211. SPM supply unit 202 supplies SPM liquid, which is a mixture of sulfuric acid and hydrogen peroxide, to nozzle 141 via SPM supply passage 221. Any known technology may be used for the configuration of vapor supply unit 201 and SPM supply unit 202. For example, SPM supply unit 202 includes a sulfuric acid supply source for supplying sulfuric acid, a hydrogen peroxide supply source for supplying hydrogen peroxide, and a mixing unit for mixing sulfuric acid and hydrogen peroxide.

[0029] The nozzle 141 mixes the vapor supplied from the vapor supply unit 201 with the SPM liquid supplied from the SPM supply unit 202 and discharges it onto the wafer W. The specific configuration of the nozzle 141 will be described later.

[0030] The second feeding mechanism 105 includes an auxiliary nozzle 151, a second arm 152 that extends horizontally and supports the auxiliary nozzle 151 from above, and a second swivel and lifting mechanism 153 that swivels and raises the second arm 152. The second swivel and lifting mechanism 153 allows the second arm 152 to move the auxiliary nozzle 151 between a processing position above the wafer W and a standby position outside the wafer W.

[0031] The auxiliary nozzle 151 is connected to the vapor supply unit 201 via the vapor supply passage 212. The vapor supply unit 201 supplies vapor to the auxiliary nozzle 151 via the vapor supply passage 212. The auxiliary nozzle 151 is also connected to the rinse liquid supply unit 203 via the rinse liquid supply passage 231 and to the replacement liquid supply unit 204 via the replacement liquid supply passage 241. The rinse liquid supply unit 203 supplies rinse liquid, in this case pure water (deionized water) as an example, to the auxiliary nozzle 151 via the rinse liquid supply passage 231. The replacement liquid supply unit 204 supplies replacement liquid, in this case IPA (isopropyl alcohol) as an example, to the auxiliary nozzle 151 via the replacement liquid supply passage 241. Any known technology may be used for the configuration of the rinse liquid supply unit 203 and the replacement liquid supply unit 204.

[0032] The auxiliary nozzle 151 discharges vapor supplied from the vapor supply unit 201 via the vapor supply passage 212 onto the wafer W. The auxiliary nozzle 151 also discharges rinse liquid supplied from the rinse liquid supply unit 203 via the rinse liquid supply passage 231 onto the wafer W. The auxiliary nozzle 151 also discharges replacement liquid supplied from the replacement liquid supply unit 204 via the replacement liquid supply passage 241 onto the wafer W.

[0033] The nozzle cleaning mechanism 106 is positioned in the standby position of the nozzle 141. The nozzle cleaning mechanism 106 cleans the nozzle 141.

[0034] Furthermore, the substrate processing apparatus 1 includes a control device 300. The control device 300 is, for example, a computer and comprises a control unit 301 and a storage unit 302. The storage unit 302 stores programs that control various processes performed in the substrate processing apparatus 1. The control unit 301 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 302.

[0035] Such a program may have been recorded on a computer-readable storage medium and installed from that storage medium to the storage unit 302 of the control device 300. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0036] <Nozzle configuration> Next, the configuration of the nozzle 141 will be described with reference to Figures 3 to 6. Figure 3 is a cross-sectional view of the nozzle 141 according to the first embodiment, taken from a plane perpendicular to the longitudinal direction. Figure 4 is a cross-sectional view taken along the line IV-IV shown in Figure 3. Figure 5 is a cross-sectional view taken along the line VV shown in Figure 3. Figure 6 is a schematic plan view of the nozzle 141 according to the first embodiment, taken from below. In Figure 6, the region where the vapor flows is indicated by dots.

[0037] As shown in Figure 3, the nozzle 141 comprises a nozzle body 41, two first distribution channels 42, one second distribution channel 43, and multiple outlet channels 44 (see Figures 4 and 5). The nozzle 141 also comprises multiple first discharge ports 45 and multiple first discharge channels 46 (see Figure 4), and multiple second discharge ports 47 and multiple second discharge channels 48 (see Figure 5).

[0038] The first distribution channel 42 and the second distribution channel 43 are formed inside the nozzle body 41. As shown in Figures 4 and 5, the first distribution channel 42 and the second distribution channel 43 extend along the longitudinal direction of the nozzle body 41. The first distribution channel 42 is connected to the vapor supply unit 201 via the vapor supply channel 211. The second distribution channel 43 is connected to the SPM supply unit 202 via the SPM supply channel 221.

[0039] As shown in Figure 3, the second distribution channel 43 is positioned on the midline (the line that bisects the nozzle body 41 horizontally) in a cross-sectional view of the nozzle body 41. The two first distribution channels 42 are positioned one on each side of the midline in a cross-sectional view of the nozzle body 41.

[0040] The multiple outlet passages 44 are located below the second distribution passage 43. As shown in Figures 3 to 5, the multiple outlet passages 44 are flow paths provided at the bottom of the nozzle body 41 and extend vertically downward. The multiple outlet passages 44 are arranged along the longitudinal direction of the nozzle body 41. Adjacent outlet passages 44 are separated by partition walls. The cross-sectional shape of the outlet passages 44 is, for example, rectangular. However, the cross-sectional shape of the outlet passages 44 may be circular or elliptical, etc.

[0041] The first discharge port 45 opens to the inner surface of the outlet passage 44. The second discharge port 47 is positioned above the first discharge port 45 and opens to the upper end surface of the outlet passage 44. As shown in Figures 4 and 5, the multiple first discharge ports 45 and the multiple second discharge ports 47 are arranged along the longitudinal direction of the nozzle body 41.

[0042] As shown in Figures 3 to 6, the nozzle 141 is equipped with a plurality of first discharge ports 45 and a plurality of second discharge ports 47, and a plurality of outlet passages 44 that communicate with two first discharge ports 45 and one second discharge port 47. The number of first discharge ports 45 and second discharge ports 47 that communicate with one outlet passage 44 is not limited to the number shown in Figures 3 to 6. In other words, the nozzle 141 may be equipped with a plurality of outlet passages 44 that communicate with at least one first discharge port 45 and at least one second discharge port 47.

[0043] Multiple first discharge ports 45 are connected to a first distribution channel 42 via multiple first discharge paths 46. Additionally, multiple second discharge ports 47 are connected to a second distribution channel 43 via multiple second discharge paths 48.

[0044] The vapor supplied from the vapor supply unit 201 to the first distribution channel 42 is distributed from the first distribution channel 42 to a plurality of first discharge channels 46, and discharged from a plurality of first discharge ports 45 to a plurality of corresponding outlet channels 44. In addition, the SPM liquid supplied from the SPM supply unit 202 to the second distribution channel 43 is distributed from the second distribution channel 43 to a plurality of second discharge channels 48, and discharged from a plurality of second discharge ports 47 to a plurality of corresponding outlet channels 44.

[0045] The vapor discharged from the first discharge port 45 and the SPM liquid discharged from the second discharge port 47 are mixed near the upper end, which is the entrance to the outlet passage 44, and then discharged toward the wafer W from the lower end, which is the exit of the outlet passage 44.

[0046] If the nozzle 141 does not have an outlet passage 44, the droplets of SPM liquid discharged from the nozzle 141 may diffuse, and the SPM liquid and vapor may not mix properly. In addition, the diffused SPM liquid may adhere to the inner wall of the chamber 101, potentially contaminating the chamber 101 and the wafer W inside the chamber 101.

[0047] In contrast, the nozzle 141 according to the first embodiment, by having an outlet passage 44, can suppress the diffusion of the vapor discharged from the first discharge port 45 and the SPM liquid discharged from the second discharge port 47 without them coming into contact with each other. Therefore, the nozzle 141 can properly mix the vapor and the SPM liquid in the outlet passage 44. Accordingly, the nozzle 141 according to the embodiment can raise the temperature of the SPM liquid to a higher level compared to, for example, a nozzle without an outlet passage 44. Furthermore, contamination of the chamber 101 due to the diffusion of the SPM liquid can be suppressed.

[0048] Furthermore, as shown in Figure 6, the second discharge port 47 is positioned coaxially with the outlet passage 44 in a plan view. The second discharge port 47 discharges the SPM liquid in a direction along the central axis of the outlet passage 44 (i.e., in the Z-axis direction). The first discharge port 45 is positioned offset from the central axis of the outlet passage 44 in a plan view. The first discharge port 45 discharges vapor in a direction offset from the central axis of the outlet passage 44 in a plan view. As a result, the vapor that collides with the inner surface of the outlet passage 44 mixes with the SPM liquid discharged from the second discharge port 47 while forming a swirling vapor flow within the outlet passage 44. In order to form a swirling vapor flow within the outlet passage 44, the vapor discharged from the first discharge port 45 should flow along the inner surface of the outlet passage 44.

[0049] When the first discharge port 45 is positioned toward the central axis of the outlet passage 44 in a plan view, the vapor discharged from the first discharge port 45 collides with the inner surface of the outlet passage 44 and disperses, making it difficult for a swirling vapor flow to form within the outlet passage 44.

[0050] In contrast, the nozzle 141 according to the first embodiment is positioned so that the first discharge port 45 is offset from the central axis of the outlet passage 44 in a plan view, allowing the vapor discharged from the first discharge port 45 to flow along the inner surface of the outlet passage 44. Therefore, the nozzle 141 can easily form a swirling flow of vapor within the outlet passage 44. Consequently, the nozzle 141 according to the first embodiment can mix the vapor and the SPM liquid more efficiently than when the first discharge port 45 is positioned towards the central axis of the outlet passage 44. Furthermore, by efficiently mixing the vapor and the SPM liquid, the temperature of the SPM liquid can be efficiently increased.

[0051] Furthermore, the central axis of the first discharge port 45 is inclined with respect to the direction of the normal N to the inner surface of the outlet passage 44 in a plan view. By inclining the central axis of the first discharge port 45 with respect to the direction of the normal N, it is possible to more easily form a swirling flow of vapor within the outlet passage 44 compared to the case where the central axis of the first discharge port 45 is perpendicular to the inner surface of the outlet passage 44. In addition, since the swirling flow can extend the time that the vapor remains in the outlet passage 44, the amount of vapor used to mix the vapor with the SPM liquid can be reduced.

[0052] <Specific operation of the substrate processing device> Next, the specific operation of the substrate processing apparatus 1 will be described with reference to Figure 7. Figure 7 is a flowchart showing the procedure of processing performed by the substrate processing apparatus 1 according to the first embodiment. The series of processes shown in Figure 7 are executed according to the control of the control unit 301.

[0053] First, the substrate processing apparatus 1 performs the wafer W loading process (step S101). Specifically, the wafer W is loaded into the chamber 101 (see Figure 1) of the substrate processing apparatus 1 by a substrate transport device located outside the substrate processing apparatus 1 and held in the substrate holding section 102. After that, the substrate processing apparatus 1 rotates the substrate holding section 102 at a predetermined rotational speed.

[0054] Next, the substrate processing apparatus 1 performs SPM processing (step S102). First, the first rotating lifting mechanism 143 moves the nozzle 141 from the standby position to the processing position on the wafer W. Then, a mixed fluid of vapor and SPM liquid is discharged from the nozzle 141 onto the surface of the wafer W. This removes the resist film formed on the surface of the wafer W.

[0055] In addition, the substrate processing apparatus 1 may use an auxiliary nozzle 151 in the SPM processing. When using the auxiliary nozzle 151, the second swivel lifting mechanism 153 positions the auxiliary nozzle 151 above the wafer W. Specifically, the auxiliary nozzle 151 is placed in a location where the vapor supply may be insufficient with only the nozzle 141, for example, on the outer periphery of the wafer W. Subsequently, vapor is discharged from the auxiliary nozzle 151 onto the surface of the wafer W.

[0056] In this way, by using the auxiliary nozzle 151, vapor can be supplied more evenly across the entire surface of the wafer W. Therefore, the temperature of the SPM liquid can be raised more evenly across the entire surface of the wafer W.

[0057] After the SPM processing in step S102 is completed, the substrate processing apparatus 1 performs a rinsing process (step S103). In this rinsing process, a rinsing solution (pure water) is supplied to the surface of the wafer W from the auxiliary nozzle 151. The rinsing solution supplied to the wafer W is spread over the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. As a result, any remaining SPM solution on the wafer W is washed away by the rinsing solution.

[0058] Next, the substrate processing apparatus 1 performs a replacement process (step S104). In the replacement process, replacement liquid (IPA) is supplied to the surface of the wafer W from the auxiliary nozzle 151. The replacement liquid supplied to the wafer W is spread over the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. As a result, any remaining rinse liquid on the wafer W is replaced by the replacement liquid.

[0059] Next, the substrate processing apparatus 1 performs a drying process (step S105). In this drying process, the rotation speed of the wafer W is increased. This shakes off any remaining displacement liquid on the wafer W, and the wafer W dries. After that, the rotation of the wafer W stops.

[0060] Next, the substrate processing apparatus 1 performs an unloading process (step S106). In the unloading process, the wafer W held in the substrate holding unit 102 is transferred to an external substrate transport device. Once this unloading process is completed, the substrate processing for one wafer W is complete.

[0061] (Second Embodiment) Next, the configuration of the nozzle according to the second embodiment will be described with reference to Figures 8 to 11. Figure 8 is a cross-sectional view of the nozzle according to the second embodiment, taken from a plane perpendicular to the longitudinal direction. Figure 9 is a cross-sectional view taken along the line IX-IX shown in Figure 8. Figure 10 is a cross-sectional view taken along the line XX shown in Figure 8. Figure 11 is a schematic plan view of the nozzle according to the second embodiment, taken from below. In Figure 11, the region where vapor flows is indicated by dots.

[0062] As shown in Figure 8, the nozzle 141A according to the second embodiment is a so-called internal mixing type two-fluid nozzle. The nozzle 141A comprises a long nozzle body 41A, a first distribution channel 42A (see Figure 9), a second distribution channel 43A (see Figure 10), and a plurality of outlet channels 44A (see Figure 10). The nozzle 141A also comprises a plurality of first discharge ports 45A and a plurality of first supply channels 46A (see Figure 9), and a plurality of second discharge ports 47A and a plurality of second supply channels 48A (see Figure 10).

[0063] The first distribution channel 42A and the second distribution channel 43A are formed inside the nozzle body 41A. As shown in Figures 9 and 10, the first distribution channel 42A and the second distribution channel 43A extend along the longitudinal direction of the nozzle body 41. The first distribution channel 42A is connected to the vapor supply unit 201 via the vapor supply channel 211. The first distribution channel 42A distributes the vapor supplied from the vapor supply unit 201 to a plurality of first supply channels 46A. The second distribution channel 43A is connected to the SPM supply unit 202 via the SPM supply channel 221. The second distribution channel 43A distributes the SPM liquid supplied from the SPM supply unit 202 to a plurality of second supply channels 48A.

[0064] The second supply channel 48A supplies the SPM liquid distributed from the second distribution channel 43A to the second discharge port 47A, which is the outlet. As shown in Figure 8, the second supply channel 48A and the outlet channel 44A extend vertically and are arranged coaxially.

[0065] The second discharge port 47A, which is the outlet of the second supply passage 48A, is positioned close to the inlet of the outlet passage 44A. Preferably, the cross-sectional area of ​​the second supply passage 48A is constant from the inlet to the outlet, and the cross-sectional shape of the second supply passage 48A is preferably circular or elliptical. As shown in the figure, if the cross-sectional area of ​​the second supply passage 48A is constant from the inlet to the outlet, the cross-sectional area (diameter) of the second discharge port 47A, which is the outlet of the second supply passage 48A, is equal to the cross-sectional area (diameter) of the second supply passage 48A.

[0066] Around the second supply channel 48A, an introduction space 49 is formed in a ring shape that surrounds the second supply channel 48A.

[0067] The first supply channel 46A supplies vapor distributed from the first distribution channel 42A to the first discharge port 45A, which is the outlet. Specifically, the first discharge port 45A, which is the outlet of the first supply channel 46A, is connected to the introduction space 49 and is configured to supply vapor to the introduction space 49.

[0068] The second supply passage 48A is positioned to pass inside the introduction space 49. This introduction space 49 is formed in a cylindrical shape with an annular cross-sectional shape. The introduction space 49 has an annular section 491 and a tapered section 492 that narrows in diameter as it goes downwards. The tapered section 492 is formed downstream of the annular section 491, and the outlet of the tapered section 492 opens annularly between the outlet of the second supply passage 48A and the inlet of the outlet passage 44A. Therefore, the vapor introduced into the introduction space 49 is mixed with the SPM liquid discharged from the second discharge port 47A, which is the outlet of the second supply passage 48A, near the inlet of the outlet passage 44A, thereby forming a mixed fluid of SPM liquid (droplets of SPM liquid).

[0069] The first discharge port 45A, which is the outlet of the first supply passage 46A, is positioned above the second discharge port 47A, which is the outlet of the second supply passage 48A, and opens to the inner wall surface of the annular portion 491 in the introduction space 49. Preferably, the cross-sectional area of ​​the first supply passage 46A is constant from the inlet to the outlet, and the cross-sectional shape of the first supply passage 46A is preferably circular or elliptical. As shown in the figure, if the cross-sectional area of ​​the first supply passage 46A is constant from the inlet to the outlet, the cross-sectional area (diameter) of the first discharge port 45A, which is the outlet of the first supply passage 46A, is equal to the cross-sectional area (diameter) of the first supply passage 46A.

[0070] As described above, the outlet passage 44A is arranged coaxially with the second supply passage 48A and communicates with the second supply passage 48A and the introduction space 49. The outlet passage 44A is formed in a straight line, and it is preferable that the cross-sectional area (diameter) of the outlet passage 44A is constant from the inlet to the outlet, and the cross-sectional shape of the outlet passage 44A is preferably circular or elliptical.

[0071] The vapor introduced from the first supply channel 46A through the introduction space 49 and the SPM liquid introduced from the second supply channel 48A are mixed near the inlet of the outlet channel 44A. As a result, countless droplets of the SPM liquid are formed, and these formed droplets, along with the vapor, are discharged to the outside through the outlet channel 44A.

[0072] Multiple nozzles 442 are provided at the tip of the outlet passage 44A. The nozzles 442 are formed in an orifice shape with a smaller cross-sectional area than the outlet passage 44A. If there were no orifice-shaped nozzles 442 with a smaller cross-sectional area than the outlet passage 44A, droplets that had grown along the inner wall of the outlet passage 44A would be discharged as they were. It is preferable that the cross-sectional area of ​​the nozzles 442 be constant from the inlet to the outlet, and the cross-sectional shape of the nozzles 442 is preferably, for example, circular or elliptical. Droplets that have passed through the outlet passage 44A are atomized again as they pass through the nozzles 442 and then sprayed. Therefore, even if droplets have grown large as they move along the inner wall of the outlet passage 44A, they can be atomized to a sufficiently small particle size and sprayed by passing them through the nozzles 442.

[0073] As shown in Figures 8 to 11, the nozzle 141A according to the second embodiment includes a plurality of first discharge ports 45A and a plurality of second discharge ports 47A, as well as a plurality of outlet passages 44A that communicate with one first discharge port 45A and one second discharge port 47A. The number of first discharge ports 45A and second discharge ports 47A that communicate with one outlet passage 44A is not limited to the number shown in Figures 8 to 11. That is, the nozzle 141A may include a plurality of outlet passages 44 that communicate with at least one first discharge port 45A and at least one second discharge port 47A.

[0074] Furthermore, as shown in Figure 11, the second discharge port 47A is positioned coaxially with the outlet passage 44 and the injection port 442 in a plan view. The second discharge port 47A discharges the SPM liquid in a direction along the central axis of the outlet passage 44A (i.e., in the Z-axis direction). The first discharge port 45A is positioned offset from the central axis of the outlet passage 44A in a plan view. The first discharge port 45A discharges vapor in a position offset from the central axis of the outlet passage 44A in a plan view. As a result, the vapor discharged from the first discharge port 45A and impacting the inner wall surface of the introduction space 49 flows through the outlet passage 44A and, in the process of reaching the injection port 442, forms a swirling vapor flow within the outlet passage 44A and mixes with the SPM liquid discharged from the second discharge port 47A. In order to form a swirling vapor flow within the outlet passage 44A, the vapor discharged from the first discharge port 45A should flow along the inner wall surface of the introduction space 49.

[0075] When the first discharge port 45A is positioned toward the central axis of the outlet passage 44A in a plan view, the vapor discharged from the first discharge port 45A collides with the inner wall surface of the introduction space 49 and disperses, making it difficult for a swirling vapor flow to form within the outlet passage 44A.

[0076] In contrast, the nozzle 141A according to the second embodiment is positioned so that the first discharge port 45A is offset from the central axis of the outlet passage 44A in a plan view, allowing the vapor discharged from the first discharge port 45A to flow along the inner wall surface of the introduction space 49. Therefore, the nozzle 141 can easily form a swirling flow of vapor in the outlet passage 44A which is in communication with the introduction space 49. Consequently, the nozzle 141A according to the second embodiment can mix the vapor and the SPM liquid more efficiently than when the first discharge port 45A is positioned towards the central axis of the outlet passage 44A. Furthermore, by efficiently mixing the vapor and the SPM liquid, the temperature of the SPM liquid can be efficiently increased.

[0077] Furthermore, the central axis of the first discharge port 45A is inclined with respect to the direction of the normal NA to the inner surface of the outlet passage 44A in a plan view. By inclining the central axis of the first discharge port 45A with respect to the direction of the normal NA, it is possible to more easily form a swirling flow of vapor within the outlet passage 44A compared to the case where the central axis of the first discharge port 45A is perpendicular to the inner surface of the outlet passage 44A. In addition, since the swirling flow can extend the time that the vapor remains in the outlet passage 44A, the amount of vapor used to mix the vapor with the SPM liquid can be reduced.

[0078] <Variation> Figure 12 is a cross-sectional view of the nozzle according to Modification 1 of the First Embodiment, cut by a plane perpendicular to the longitudinal direction. In Figure 12, the nozzle 141B according to Modification 1 of the First Embodiment is shown in a state where it is located at a processing position above the wafer W.

[0079] As shown in Figure 12, the nozzle body 41B of the nozzle 141B is provided with an outlet passage 44B. The outlet passage 44B is positioned diagonally with respect to the rotation direction R of the wafer W, which is rotated by the substrate holding part 102. That is, when the nozzle 141B is tilted with respect to the vertical axis (Z axis) and supported from above by the first arm 142B, the outlet passage 44B is positioned diagonally with respect to the rotation direction R of the wafer W. By positioning the outlet passage 44B diagonally in this way, the vapor discharged from the outlet passage 44B can be directed along the surface of the wafer W in the direction of the wafer W's rotation, thereby suppressing the accumulation of fumes near the surface of the wafer W. In the nozzle 141A according to the second embodiment, the outlet passage 44A may also be positioned diagonally with respect to the rotation direction R of the wafer W.

[0080] Figure 13 is a cross-sectional view of a nozzle according to Modification 2 of the First Embodiment, cut in a plane perpendicular to the longitudinal direction. In Figure 13, the nozzle 141C according to Modification 2 of the First Embodiment is supported from above by a first arm 142C so as to be tiltable with respect to the vertical axis (Z axis). That is, the first arm 142C has a tilt adjustment mechanism 52 that adjusts the inclination of the nozzle 141C, and the nozzle 141C can be tilted with respect to the vertical axis (Z axis) by this tilt adjustment mechanism 52.

[0081] Next, the SPM processing using the nozzle 141C will be described with reference to Figure 14. Figure 14 is a flowchart showing the procedure for SPM processing according to Modification 2 of the First Embodiment. The SPM processing shown in Figure 14 is performed according to the control of the control unit 301 (see Figure 1). Furthermore, the SPM processing shown in Figure 14 is performed with the wafer W held in the substrate holding unit 102 in a rotated state.

[0082] First, the first swivel lifting mechanism 143 moves the nozzle 141C from the standby position to the processing position on the wafer W. Next, the control unit 301 tilts the nozzle 141C with respect to the vertical axis (Z axis) using the tilt adjustment mechanism 52 of the first arm 142C, and positions the output path 44 diagonally with respect to the rotation direction R of the wafer W (see Figure 13) (step S121).

[0083] Subsequently, a mixed fluid of vapor and SPM liquid is discharged from the nozzle 141C onto the surface of the wafer W (step S122). This removes the resist film formed on the surface of the wafer W. At this time, the outlet passage 44 is positioned obliquely to the rotation direction R of the wafer W. This allows the vapor discharged from the outlet passage 44 to escape along the surface of the wafer W in the direction of the wafer W's rotation, thereby suppressing the accumulation of fumes near the surface of the wafer W. In the second embodiment, the nozzle 141A may be supported from above by the first arm 142C so as to be tiltable with respect to the vertical axis (Z axis). In this case, an SPM process similar to the SPM process shown in Figure 14 may be performed according to the control of the control unit 301.

[0084] Figure 15 is a cross-sectional view of a nozzle according to Modification 1 of the second embodiment, cut by a plane perpendicular to the longitudinal direction. As shown in Figure 15, the nozzle body 41D of the nozzle 141D according to Modification 1 of the second embodiment includes a first distribution channel 42D and a second distribution channel 43D. The nozzle body 41D also includes a plurality of first discharge ports 45D and a plurality of first supply channels 46D, and a plurality of second discharge ports 47D and a plurality of second supply channels 48D.

[0085] In the second embodiment described above, an introduction space 49 is formed around the second supply passage 48A of the nozzle 141A, but in the modified example 1 of the second embodiment, no introduction space 49 is formed around the second supply passage 48D. The second discharge port 47D, which is the outlet of the second supply passage 48D, is in direct communication with the inlet of the outlet passage 44A.

[0086] Furthermore, the first discharge port 45D, which is the outlet of the first supply passage 46D, opens to the inner surface of the outlet passage 44A and is configured to supply vapor to the outlet passage 44D.

[0087] The vapor introduced from the first supply channel 46D and the SPM liquid introduced from the second supply channel 48D are mixed near the upper end, which is the inlet of the outlet channel 44A. As a result, countless droplets of the SPM liquid are formed, and these formed droplets, along with the vapor, are discharged to the outside through the outlet channel 44A.

[0088] Thus, the second supply passage 48D and the second discharge port 47D may communicate directly with the outlet passage 44A without passing through the introduction space 49. Also, the first discharge port 45D may open to the inner surface of the outlet passage 44A. This allows for efficient mixing of the vapor and the SPM liquid even in a simple configuration in which the introduction space 49 is omitted.

[0089] <Other variations> In the embodiments and modifications described above, examples of mixing vapor and SPM liquid were explained, but mist may be used instead of vapor. That is, a mist supply unit that supplies pressurized pure water mist may be provided instead of the vapor supply unit 201.

[0090] In the embodiments and modifications described above, a substrate processing apparatus for removing a resist film formed on the surface of a substrate was used as an example. That is, an example was described in which the object to be removed in the SPM process is a resist film. However, the object to be removed in the SPM process is not limited to a resist film. For example, the object to be removed in the SPM process may be the residue (organic matter) after ashing. Also, the object to be removed in the SPM process may be unwanted material contained in the polishing agent after CMP (chemical mechanical polishing).

[0091] In the first embodiment described above, the positions of the first discharge port 45 and the second discharge port 47 may be reversed. That is, vapor or mist may be discharged from the position of the second discharge port 47 as shown in Figure 3, and SPM liquid may be discharged from the position of the first discharge port 45. Similarly, in the second embodiment, the positions of the first discharge port 45A and the second discharge port 47A may be reversed. That is, vapor or mist may be discharged from the position of the second discharge port 47A as shown in Figure 8, and SPM liquid may be discharged from the position of the first discharge port 45A.

[0092] As described above, the nozzle according to the embodiment (for example, nozzles 141, 141A to 141D) is a nozzle that mixes and discharges a fluid containing pressurized pure water vapor or mist (for example, vapor or mist) and a processing liquid containing at least sulfuric acid (for example, SPM liquid). The nozzle comprises a first discharge port (for example, first discharge ports 45, 45A, 45D), a second discharge port (for example, second discharge ports 47, 47A, 47D), and an outlet passage (for example, outlet passages 44, 44A, 44B). The first discharge port discharges the fluid. The second discharge port discharges the processing liquid. The outlet passage communicates with the first and second discharge ports and discharges the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Furthermore, the first or second discharge port is positioned to be offset from the central axis of the outlet in a plan view.

[0093] According to the nozzle of this embodiment, the vapor discharged from the first discharge port can flow along the inner surface of the outlet passage. This makes it easy to form a swirling flow of vapor within the outlet passage. Therefore, according to the nozzle of this embodiment, the vapor and SPM liquid can be efficiently mixed in an SPM treatment using a mixed fluid of vapor and SPM liquid. As a result, the temperature of the SPM liquid can be efficiently increased according to the nozzle of this embodiment, thereby improving the removal efficiency of the target material in an SPM treatment using a mixed fluid of vapor and SPM liquid.

[0094] The central axis of the first or second discharge port may be inclined with respect to the direction of the normal to the inner surface of the outlet passage (e.g., normal N,NA) in a plan view. This facilitates the formation of a swirling flow of vapor within the outlet passage. Furthermore, the swirling flow extends the time that the vapor remains in the outlet passage, thus reducing the amount of vapor used to mix the vapor with the SPM liquid.

[0095] The nozzle according to the embodiment may include a plurality of first discharge ports and a plurality of second discharge ports, as well as a plurality of outlet passages communicating with at least one first discharge port and at least one second discharge port.

[0096] The first discharge port (for example, the first discharge port 45) may open to the inner surface of the outlet passage (for example, outlet passages 44, 44B). The second discharge port (for example, the second discharge port 47) may open to the upper end surface of the outlet passage. This allows for efficient mixing of the vapor and SPM liquid near the upper end, which is the inlet of the outlet passage.

[0097] The nozzle according to the embodiment (for example, nozzle 141A) may further include a second supply passage (for example, second supply passage 48A) and an introduction space (for example, introduction space 49). The second supply passage may supply the processing liquid to the second discharge port. The introduction space is formed in an annular shape surrounding the second supply passage. The second discharge port and the second supply passage may be arranged coaxially with the outlet passage (for example, outlet passage 44A) and communicate with the outlet passage and the introduction space. The first discharge port (for example, first discharge port 45A) may open to the inner wall surface of the introduction space.

[0098] According to the nozzle of this embodiment, the vapor discharged from the first discharge port can flow along the inner wall surface of the introduction space. This makes it easy to form a swirling flow of vapor in the outlet passage that communicates with the introduction space. Therefore, according to the nozzle of this embodiment, the vapor and SPM liquid can be efficiently mixed in an SPM treatment using a mixed fluid of vapor and SPM liquid. As a result, the temperature of the SPM liquid can be efficiently increased according to the nozzle of this embodiment, thereby improving the removal efficiency of the target material in an SPM treatment using a mixed fluid of vapor and SPM liquid.

[0099] The first discharge port (for example, the first discharge port 45A) is positioned above the second discharge port (for example, the second discharge port 47A), and by discharging the fluid towards a position offset from the central axis of the outlet passage (for example, the outlet passage 44A) in a plan view, a swirling flow may be formed within the outlet passage. This allows for efficient mixing of the vapor and the SPM liquid in an SPM treatment using a mixed fluid of vapor and SPM liquid.

[0100] The first discharge port may open to the upper end surface of the outlet passage. The second discharge port may open to the inner surface of the outlet passage.

[0101] The nozzle according to the embodiment may further include a first supply passage and an introduction space. The first supply passage may supply fluid to a first discharge port. The introduction space may be formed in an annular shape surrounding the first supply passage. The first discharge port and the first supply passage may be arranged coaxially with the outlet passage and communicate with the outlet passage and the introduction space. The second discharge port may open to the inner wall surface of the introduction space.

[0102] The second discharge port may be positioned above the first discharge port and discharge the processed liquid towards a position offset from the central axis of the discharge channel in a plan view, thereby forming a swirling flow within the discharge channel.

[0103] A substrate processing apparatus according to an embodiment (for example, substrate processing apparatus 1) comprises a substrate holding unit (for example, substrate holding unit 102), a fluid supply unit (for example, vapor supply unit 201), a processing liquid supply unit (for example, SPM supply unit 202), and nozzles (for example, nozzles 141, 141A to 141D). The substrate holding unit rotatably holds a substrate (for example, wafer W). The fluid supply unit supplies a fluid (for example, vapor or mist) containing pressurized pure water vapor or mist. The processing liquid supply unit supplies a processing liquid (for example, SPM liquid) containing at least sulfuric acid. The nozzles are connected to the fluid supply unit and the processing liquid supply unit, and mix the fluid and the processing liquid before discharging it onto the substrate. The nozzle also includes a first discharge port (for example, first discharge ports 45, 45A, 45D), a second discharge port (for example, second discharge ports 47, 47A, 47D), and an outlet passage (for example, outlet passages 44, 44A, 44B). The first discharge port discharges fluid. The second discharge port discharges processing liquid. The outlet passage communicates with the first and second discharge ports and leads out a mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. In addition, the first or second discharge port is positioned offset from the central axis of the outlet passage in a plan view.

[0104] According to the substrate processing apparatus of the embodiment, the vapor discharged from the first discharge port can flow along the inner surface of the outlet passage. This makes it easy to form a swirling flow of vapor within the outlet passage. Therefore, according to the substrate processing apparatus of the embodiment, the vapor and SPM liquid can be efficiently mixed in an SPM treatment using a mixed fluid of vapor and SPM liquid. As a result, the substrate processing apparatus of the embodiment can efficiently raise the temperature of the SPM liquid, thereby improving the removal efficiency of the target material in an SPM treatment using a mixed fluid of vapor and SPM liquid.

[0105] The discharge path may be positioned obliquely to the direction of rotation of the substrate (for example, rotation direction R) as it is rotated by the substrate holder. This allows the vapor discharged from the discharge path to escape along the surface of the substrate in the direction of the substrate's rotation, thereby suppressing the accumulation of fumes near the surface of the substrate.

[0106] A substrate processing apparatus according to an embodiment (for example, substrate processing apparatus 1) comprises a substrate holding unit (for example, substrate holding unit 102), a fluid supply unit (for example, vapor supply unit 201), a processing liquid supply unit (for example, SPM supply unit 202), nozzles (for example, nozzles 141, 141A to 141D), and a control unit (for example, control unit 301). The substrate holding unit rotatably holds a substrate (for example, wafer W). The fluid supply unit supplies a fluid (for example, vapor or mist) containing pressurized pure water vapor or mist. The processing liquid supply unit supplies a processing liquid (for example, SPM liquid) containing at least sulfuric acid. The nozzles are connected to the fluid supply unit and the processing liquid supply unit, and mix the fluid and the processing liquid before discharging it onto the substrate. The nozzle also includes a first discharge port (for example, first discharge ports 45, 45A, 45D), a second discharge port (for example, second discharge ports 47, 47A, 47D), and an outlet passage (for example, outlet passages 44, 44A, 44B). The first discharge port discharges fluid. The second discharge port discharges processing liquid. The outlet passage communicates with the first and second discharge ports and leads out a mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. In addition, the first or second discharge port is positioned offset from the central axis of the outlet passage in a plan view. Furthermore, the control unit tilts the nozzle while the substrate held in the substrate holder is rotating, positioning the outlet passage diagonally with respect to the direction of rotation of the substrate (for example, the rotation direction R), and discharges the mixed fluid from the nozzle toward the substrate. This allows the vapor discharged from the outlet to escape along the surface of the substrate in the direction of the substrate's rotation, thereby suppressing the accumulation of fumes near the surface of the substrate.

[0107] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0108] 1. Substrate processing apparatus 41, 41A, 41B, 41D Nozzle body 42, 42A, 42D 1st distribution path 46A,46D 1st supply path 43, 43A, 43D 2nd distribution route 48A,48D 2nd supply path 44,44A,44B,44D Lead-out path 45,45A,45D 1st discharge port 46 1st discharge path 47,47A,47D 2nd discharge port 48 2nd discharge path 49 Introduction Space 52 Tilt adjustment mechanism 102 Board holding part 141, 141A, 141B, 141C, 141D Nozzles 142, 142B, 142C First Arm 143 First Swivel Lifting Mechanism 201 Vapor Supply Unit 202 SPM supply section 211,212 vapor supply channels 221 SPM supply path 300 Control device 301 Control Unit 302 Storage section N,NA normal vector R rotation direction W wafer

Claims

1. A nozzle that mixes a fluid containing pressurized pure water vapor or mist with a processing liquid containing at least sulfuric acid and discharges it to a target, A nozzle body having a lower end surface that can face the target of discharge, A first discharge port formed inside the nozzle body for discharging the fluid, A second discharge port is formed inside the nozzle body and discharges the processing liquid, Inside the nozzle body, there is an outlet passage that communicates with the first discharge port and the second discharge port, and for guiding out the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Equipped with, One of the first and second discharge ports is arranged coaxially with the outlet, and the other of the first and second discharge ports is positioned offset from the central axis of the outlet in a plan view. The aforementioned outlet passage communicates with the first discharge port and the second discharge port inside the nozzle body and extends to the lower end surface of the nozzle body, and guides the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port out from the lower end surface of the nozzle body. It comprises a plurality of first discharge ports and a plurality of second discharge ports, and a plurality of outlet passages communicating with at least one first discharge port and at least one second discharge port, A nozzle in which adjacent outlet passages are separated by a partition wall connected to the lower end surface of the nozzle body.

2. The nozzle according to claim 1, wherein the other central axis of the first discharge port and the second discharge port in each of the aforementioned discharge passages is inclined with respect to the direction of the normal to the inner surface of the discharge passage in a plan view.

3. The first discharge port in each of the aforementioned discharge passages opens to the inner surface of the discharge passage, The nozzle according to claim 1 or 2, wherein the second discharge port in each of the discharge passages opens to the upper end surface of the discharge passage.

4. A second supply path that supplies the processing liquid to the second discharge port in each of the aforementioned discharge paths, The introduction space formed in an annular shape surrounding the second supply path and Furthermore, The second discharge port and the second supply passage in each of the aforementioned discharge passages are arranged coaxially with the discharge passage and communicate with the discharge passage and the introduction space. The nozzle according to claim 1 or 2, wherein the first discharge port in each of the aforementioned discharge passages opens to the inner wall surface of the introduction space.

5. The nozzle according to claim 4, wherein the first discharge port in each of the discharge passages is positioned above the second discharge port, and the fluid is discharged toward a position offset from the central axis of the discharge passage in a plan view, thereby forming a swirling flow within the discharge passage.

6. The first discharge port in each of the aforementioned discharge passages opens to the upper end surface of the discharge passage, The nozzle according to claim 1 or 2, wherein the second discharge port in each of the discharge passages opens to the inner surface of the discharge passage.

7. A first supply passage that supplies the fluid to the first discharge port in each of the aforementioned discharge passages, An introduction space formed in an annular shape surrounding the first supply path and Furthermore, The first discharge port and the first supply passage in each of the aforementioned discharge passages are arranged coaxially with the discharge passage and communicate with the discharge passage and the introduction space. The nozzle according to claim 1 or 2, wherein the second discharge port in each of the aforementioned discharge passages opens to the inner wall surface of the introduction space.

8. The nozzle according to claim 7, wherein the second discharge port in each of the discharge passages is positioned above the first discharge port, and the processed liquid is discharged toward a position offset from the central axis of the discharge passage in a plan view, thereby forming a swirling flow within the discharge passage.

9. A substrate holding section that rotatably holds the substrate, A fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist, A processing liquid supply unit that supplies a processing liquid containing at least sulfuric acid, A nozzle connected to the fluid supply unit and the processing liquid supply unit mixes the fluid and the processing liquid and discharges it onto the substrate. Equipped with, The aforementioned nozzle is A nozzle body having a lower end surface that can face the substrate, A first discharge port formed inside the nozzle body for discharging the fluid, A second discharge port is formed inside the nozzle body and discharges the processing liquid, Inside the nozzle body, there is an outlet passage that communicates with the first discharge port and the second discharge port, and for guiding out the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Equipped with, One of the first and second discharge ports is arranged coaxially with the outlet, and the other of the first and second discharge ports is positioned offset from the central axis of the outlet in a plan view. The aforementioned outlet passage communicates with the first discharge port and the second discharge port inside the nozzle body and extends to the lower end surface of the nozzle body, and guides the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port out from the lower end surface of the nozzle body. The nozzle comprises a plurality of first discharge ports and a plurality of second discharge ports, and a plurality of outlet passages communicating with at least one first discharge port and at least one second discharge port. A substrate processing apparatus in which adjacent outlet passages are separated by a partition wall connected to the lower end surface of the nozzle body.

10. The substrate processing apparatus according to claim 9, wherein the plurality of outlets are arranged obliquely to the direction of rotation of the substrate which is rotated by the substrate holding portion.

11. A substrate holding section that rotatably holds the substrate, A fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist, A processing liquid supply unit that supplies a processing liquid containing at least sulfuric acid, A nozzle connected to the fluid supply unit and the processing liquid supply unit, which mixes the fluid and the processing liquid and discharges it onto the substrate, Control unit that controls each part Equipped with, The aforementioned nozzle is A nozzle body having a lower end surface that can face the substrate, A first discharge port formed inside the nozzle body for discharging the fluid, A second discharge port is formed inside the nozzle body and discharges the processing liquid, Inside the nozzle body, there is an outlet passage that communicates with the first discharge port and the second discharge port, and for guiding out the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Equipped with, One of the first and second discharge ports is arranged coaxially with the outlet, and the other of the first and second discharge ports is positioned offset from the central axis of the outlet in a plan view. The aforementioned outlet passage communicates with the first discharge port and the second discharge port inside the nozzle body and extends to the lower end surface of the nozzle body, and guides the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port out from the lower end surface of the nozzle body. The nozzle comprises a plurality of first discharge ports and a plurality of second discharge ports, and a plurality of outlet passages communicating with at least one first discharge port and at least one second discharge port. The adjacent outlet passages are separated by a partition wall connected to the lower end surface of the nozzle body. The control unit, With the substrate held in the substrate holder rotating, the nozzle is tilted, and the multiple outlet paths are arranged diagonally with respect to the direction of rotation of the substrate. A substrate processing apparatus that discharges the mixed fluid from the nozzle toward the substrate.

12. A substrate holding section that rotatably holds the substrate, A fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist, A processing liquid supply unit that supplies a processing liquid containing at least sulfuric acid, A nozzle connected to the fluid supply unit and the processing liquid supply unit mixes the fluid and the processing liquid and discharges it onto the substrate. Equipped with, The aforementioned nozzle is A nozzle body having a lower end surface that can face the substrate, A first discharge port formed inside the nozzle body for discharging the fluid, A second discharge port is formed inside the nozzle body and discharges the processing liquid, Inside the nozzle body, there is an outlet passage that communicates with the first discharge port and the second discharge port, and for guiding out the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port. Equipped with, One of the first and second discharge ports is arranged coaxially with the outlet, and the other of the first and second discharge ports is positioned offset from the central axis of the outlet in a plan view. The aforementioned outlet passage communicates with the first discharge port and the second discharge port inside the nozzle body and extends to the lower end surface of the nozzle body, and guides the mixed fluid of the fluid discharged from the first discharge port and the processing liquid discharged from the second discharge port out from the lower end surface of the nozzle body. The nozzle comprises a plurality of first discharge ports and a plurality of second discharge ports, and a plurality of outlet passages communicating with at least one first discharge port and at least one second discharge port. In a substrate processing apparatus in which adjacent outlet passages are separated by a partition wall connected to the lower end surface of the nozzle body, With the substrate held in the substrate holder rotating, the nozzle is tilted, and the multiple outlet paths are arranged diagonally with respect to the direction of rotation of the substrate. A substrate processing method comprising discharging the mixed fluid from the nozzle toward the substrate.

Images