Indication device

Abstract

The frame area provides a small display device. [Solution] The display device 10 has a first layer and a second layer. The first layer has a source driver and a part of a sensor Sen, and the second layer has a gate driver, a plurality of pixels and the remaining part of the sensor. The plurality of pixels include pixels that emit light from a light-emitting element and pixels that have the function of a gate driver. The upper surface of the first layer has an opening in which a part of the sensor is formed and a first terminal connected to the source driver, and the side of the second layer opposite to the side where the pixels are arranged has a second terminal. The first terminal is electrically connected by bonding with the second terminal, and the sensor is formed. Since the output signal of the source driver is supplied directly to the wiring to which the plurality of pixels are connected via the first terminal, it is not necessary to provide the source driver and gate driver on the outer periphery of the display area 110 where the plurality of pixels are provided.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. The technical field relates to a product, a method, or a method of manufacture. Or, one aspect of the present invention. This refers to a process, machine, manufacture, or composition. This concerns (the tar).

[0003] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This refers to the whole. Therefore, it includes semiconductor elements such as transistors and diodes, and semiconductor elements. The circuit is a semiconductor device. It is also used in display devices, light-emitting devices, lighting devices, electro-optical devices, and communications. Devices and electronic equipment may include semiconductor elements and semiconductor circuits. Therefore, display devices Lighting devices, illumination devices, electro-optical devices, imaging devices, communication devices, and electronic equipment are also included. It is sometimes called a conductive device. [Background technology]

[0004] Smartphones, smartwatches (registered trademark), tablet devices, eyeglasses-type displays i, or a head-mounted display such as a goggle-type display (head-mounted display) The opportunities to use wearable electronic devices that are easy to carry and worn on the body are increasing. It's increasing.

[0005] Wearable electronic devices are characterized by miniaturization of the device's casing, reduction of the device's weight, and Furthermore, there is a demand for display performance with high resolution. For example, goggle-type displays are... By displaying the information, the sense of presence can be improved, so a display device with high definition is required. In addition, if the electronic device is small and lightweight, the burden on the body and fatigue during wearing can be reduced.

[0006] With the development of information technologies such as IoT (Internet of Things) that connect electronic devices other than information terminals (for example, in-vehicle electronic devices, household electrical appliances, houses, buildings, or wearable devices, etc.) to the Internet, the amount of data handled by electronic devices tends to increase. In addition, an improvement in communication speed is required for electronic devices such as information terminals.

[0007] To realize IoT, since the number of electronic devices newly connected to the Internet increases, it is required to increase the number of electronic devices that can be connected at one time. In addition, since many electronic devices are connected to the Internet at one time, a communication time lag (which may also be referred to as a delay) occurs. Therefore, in order to support various information technologies including IoT, a new communication standard called the 5th generation mobile communication system (5G) that realizes a communication speed faster than 4G, many simultaneous connections, a short delay time, etc. is being studied. In 5G, for example, communication frequencies in the 3.7 GHz band, 4.5 GHz band, and 28 GHz band are used.

[0008] In Patent Document 1, a display device is disclosed in which a pixel includes a part of a gate driver circuit, so that the layout area of the gate driver can be reduced. [Prior Art Documents] [Patent Documents]

[0009] [Patent Document 1] International Publication No. 2014-069529 [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] Wearable electronic devices utilize display devices of various shapes depending on the purpose. However, the electronic device in question is not limited to a shape enclosed by opposite sides; for example, it can be a circle, an ellipse, or anything else. The display must also support shapes other than those enclosed by opposite sides, such as triangles. There are challenges. Also, when wearing the electronic device for extended periods, the device is large and heavy. There is a problem that it places a heavy burden on the body and increases fatigue. Furthermore, the electronic device in question has a large number of components. In this case, there is the challenge of increased power consumption and larger casings for electronic devices.

[0011] Furthermore, electronic devices connected to 5G networks, including IoT devices, have excellent portability. Furthermore, it is required to be small. Also, when using 5G for communication, different frequencies are required. One challenge is the need to install antennas that can transmit and receive signals using multiple frequency bands.

[0012] One aspect of the present invention aims to provide a display device with a novel configuration. Alternatively, one of the objectives is to provide a display device having a display area of ​​any shape. Alternatively, one of the challenges is to provide a display device with a configuration suitable for miniaturization. One of the challenges is to provide display devices and other equipment that offer good productivity.

[0013] Alternatively, one aspect of the present invention aims to provide an electronic device with a novel configuration. Alternatively, a display device having a display area that is not limited to a shape enclosed by opposite sides. One of the challenges is to provide electronic devices and other equipment that are suitable for miniaturization. One of the challenges is to provide electronic devices with display devices, etc. Alternatively, to improve productivity. One of the objectives is to provide electronic devices with good display capabilities.

[0014] Furthermore, the description of these problems does not preclude the existence of other problems. One embodiment does not need to solve all of these problems. Other problems are addressed in the details. This will become clear from the description in the document, drawings, and claims, etc. It is possible to extract other issues from the descriptions in the sections and other documents. [Means for solving the problem]

[0015] One aspect of the present invention is a display device having a first layer and a second layer. The first layer is It comprises a source driver and a first element of the sensor. The second layer is a gate driver. It has a base, multiple pixels, and a second element of the sensor. The pixels also have light-emitting elements. The sensor is formed in the region that overlaps with the source driver. The first layer has an opening. and has a first terminal. The opening is provided with the first element of the sensor. First terminal It is electrically connected to the source driver. Pixels are provided on the first surface of the second layer, A second terminal is provided on the second face opposite to the first face. The second terminal is electrically connected to the pixel. The first terminal is electrically connected to the second terminal, and the output signal of the source driver is connected. This can be supplied to wiring to which multiple pixels are connected via the first terminal. Then, a source driver and a gate driver are placed at the outer edge of the display area where multiple pixels are provided. This is a display device that does not require a sensor. The sensor is a MEMS (Microelectronics). (ro Mechanical Systems)

[0016] A different aspect of the present invention is a display device having a first layer and a second layer. The first layer has a source driver. The second layer has a gate driver, multiple pixels, and an ante It has a gate driver and a plurality of pixels, either one or both of which are anchored. It is formed in the region overlapping with Na. The first layer has a first terminal and a third terminal. The terminal is electrically connected to the source driver. Pixels are provided on the first surface of the second layer. Furthermore, a second terminal is provided on the second surface opposite to the first surface. The second terminal is connected to the pixel and electricity. They are electrically connected. The first terminal is electrically connected to the second terminal. The third terminal is A It is electrically connected to the end of the antenna. The output signal of the source driver is transmitted via the first terminal. It can be supplied to wiring where multiple pixels are connected.

[0017] In each of the above configurations, the second layer has a larger area than the first layer, and the second layer is It is preferable that the layer has an overlapping region with the first layer.

[0018] The above-mentioned pixels include a first pixel and a second pixel. The first pixel and the second pixel are Each has a light-emitting element. The second pixel further has a gate driver element. This is preferable. Furthermore, the light-emitting element preferably contains organic material. Alternatively, LED( It is preferable that the light emitting diode is a light-emitting diode or a micro-LED. It's nice.

[0019] In each of the above configurations, the first terminal is electrically connected to the second terminal via a conductive bump. It is preferable to connect them precisely.

[0020] A different aspect of the present invention is a display device having a first layer and a second layer. The first layer has a first transistor and a first element of the sensor. Also, the second The layer has a second transistor, a light-emitting element, and a second element of the sensor. The transistor is formed in the region overlapping with the first transistor. The first layer has an opening and the A terminal 1 is provided. The opening is provided with the first element of the sensor. The first terminal is, It is electrically connected to the first transistor. A light-emitting element is provided on the first surface of the second layer. On the second surface opposite the first surface, the second terminal of the second transistor is provided. Terminal 1 is electrically connected to terminal 2.

[0021] In the above configuration, it is preferable that the semiconductor layer of the second transistor has a metal oxide. stomach. The second transistor preferably has a back gate. [Effects of the Invention]

[0022] One aspect of the present invention can provide a display device with a novel configuration, or, To provide a display device having a display area that is not limited to a shape enclosed by opposing edges. Yes, it is possible. Or, a display device with a configuration suitable for miniaturization can be provided. Or, We can provide display devices and other equipment that offer good productivity.

[0023] Alternatively, one aspect of the present invention can provide an electronic device with a novel configuration. An electronic device having a display device having a display area that is not limited to a shape enclosed by opposite sides. We can provide equipment, etc., or electronic devices having a display device with a configuration suitable for miniaturization. We can provide equipment, etc. Or, electronic devices with a display device that has good productivity. We can provide these.

[0024] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0025] [Figure 1] Figure 1 is a diagram illustrating electronic equipment. [Figure 2] Figures 2A to 2D illustrate the display device. [Figure 3] Figure 3 is a circuit diagram illustrating the display device. [Figure 4] Figures 4A and 4B illustrate the display device. [Figure 5] Figures 5A and 5B illustrate the display device. [Figure 6] Figures 6A and 6B illustrate the sensor. [Figure 7] Figure 7 is a block diagram illustrating the gate driver. [Figure 8] Figure 8A is a block diagram illustrating the gate driver. Figure 8B is a circuit diagram illustrating the gate driver. [Figure 9] Figures 9A to 9D are circuit diagrams illustrating pixels. [Figure 10] Figures 10A and 10B illustrate the display device. [Figure 11] Figure 11 is a diagram illustrating an antenna. [Figure 12] Figure 12 illustrates an example of the configuration of a wireless transceiver. [Figure 13] Figure 13 illustrates an example of a wireless transceiver configuration. [Figure 14] Figures 14A and 14B show examples of transistor configurations. [Figure 15] Figures 15A to 15C show examples of transistor configurations. [Figure 16] Figures 16A to 16C show examples of transistor configurations. [Figure 17] Figure 17A illustrates the classification of IGZO crystal structures. Figure 17B illustrates the XRD spectrum of a CAAC-IGZO film. Figure 17C illustrates the micro-electron diffraction pattern of a CAAC-IGZO film. [Figure 18] Figures 18A to 18D show examples of electronic devices. [Figure 19] Figures 19A to 19D show examples of electronic devices. [Figure 20] Figures 20A to 20F show examples of electronic devices. [Modes for carrying out the invention]

[0026] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may vary. Those skilled in the art will readily understand that modifications are possible. Therefore, the present invention is as described below. The description of the form is not to be interpreted in isolation. In this context, the same reference numeral is used for identical parts or parts having similar functions across different drawings. We will use it and omit the repetition of its explanation.

[0027] Furthermore, the position, size, and range of each component shown in the drawings, etc., are intended to facilitate understanding of the invention. Therefore, the actual location, size, and range may not be represented. The invention is not necessarily limited to the position, size, scope, etc. disclosed in the drawings, etc. However, in the actual manufacturing process, the resist mask and other materials may be removed due to processes such as etching. While there may be some reduction in volume, this is sometimes not reflected in the diagram for the sake of easier understanding.

[0028] Furthermore, to make drawings easier to understand, such as top views (also called "plan views") and perspective views. Therefore, the description of some components may be omitted.

[0029] Furthermore, in this specification, the terms "electrode" and "wiring" refer to these components functionally. It is not limited to this. For example, "electrode" can be used as part of "wiring". And the reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and This includes cases where the wiring is formed as an integrated unit.

[0030] Furthermore, in this specification, the resistance value of "resistance" may be determined by the length of the wiring. Alternatively, the resistance value is determined by connecting to a conductive layer having a different resistivity than the conductive layer used in the wiring. In some cases, the resistance can be determined by doping the semiconductor layer with impurities. There are times when a decision needs to be made.

[0031] Furthermore, in this specification, etc., "terminal" in an electrical circuit means an input or output of current, This refers to the part where voltage is input or output, or where signals are received or transmitted. In some cases, a portion of the wiring or electrodes may function as a terminal.

[0032] In this specification, the terms "upper," "above," "down," or "below" refer to the composition of This does not limit the relative positions of the elements to being directly above or below each other and in direct contact. For example, the expression "electrode B on insulating layer A" means that electrode B is in direct contact with insulating layer A. It is not necessary for them to be formed, and excludes those that include other components between insulating layer A and electrode B. No. Also, if the expression is "conductive layer D above conductive layer C", then conductive layer D is on top of conductive layer C. They do not need to be formed in direct contact, and other components may be included between conductive layer C and conductive layer D. Do not exclude items. Also, "above" or "below" are places that are positioned diagonally. We will not exclude combinations either.

[0033] Furthermore, the source and drain functions may differ when using transistors with different polarities, In circuit operation, the direction of current changes, and depending on the operating conditions, they can be swapped. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be considered as such.

[0034] Furthermore, in this specification, "electrically connected" refers to both a direct connection and a connection without any other means. This includes cases where it is connected via "something that has an electrical effect". Here, "anything" "A device that has electrical properties" is one that enables the exchange of electrical signals between connected objects. If so, there are no particular restrictions. Therefore, even when it is expressed as "electrically connected" In real-world circuits, there are cases where there are no physical connections, and only wiring extends. Furthermore, "direct connection" involves wiring formed by different conductive layers, which are connected via contacts. This includes cases where they are connected and function as a single wire.

[0035] Furthermore, in this specification and elsewhere, "parallel" means, for example, two straight lines that are at an angle of -10° or more. This refers to a state where the objects are positioned at an angle of -° or less. Therefore, it also includes cases where the angle is between -5° and 5°. Furthermore, "perpendicular" and "orthogonal" refer to, for example, two lines that are at an angle of 80° or more and 100° or less. This refers to a state where objects are positioned at a certain angle. Therefore, it also includes cases where the angle is between 85° and 95°.

[0036] In this specification and other documents, the terms "identical," "same," and "equivalent" are used in relation to count values ​​and measured values. When using terms like "uniform" or "same," unless otherwise specified, it refers to plus or minus 2. Assume a 0% margin of error.

[0037] Furthermore, voltage is the potential difference between a certain potential and a reference potential (e.g., ground potential or source potential). It often refers to the difference. Therefore, voltage and potential can sometimes be used interchangeably. Many. In this specification, unless otherwise specified, voltage and potential can be used interchangeably. It shall be assumed that...

[0038] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently low, it can be referred to as an "insulator." It possesses the following characteristics. Therefore, it is also possible to use it by replacing "semiconductor" with "insulator". Yes, in this case, the boundary between "semiconductors" and "insulators" is ambiguous, and a strict distinction between the two is difficult. Therefore, the terms "semiconductor" and "insulator" as used in this specification may be interpreted interchangeably. It is sometimes possible.

[0039] Also, even when the term "semiconductor" is used, for example, if the conductivity is sufficiently high, it can be referred to as a "conductor." It possesses the following characteristics. Therefore, it is also possible to use it by replacing "semiconductor" with "conductor". Yes, in this case, the boundary between "semiconductors" and "conductors" is ambiguous, and a strict distinction between the two is difficult. Therefore, the terms "semiconductor" and "conductor" as used herein may be interpreted interchangeably. It is sometimes possible.

[0040] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. It is added for the purpose of indicating the order or sequence of processes or stacking order, or any other kind of order or ranking. No. Furthermore, even if a term is not given an ordinal number in this specification, the constituent elements may be mixed. To avoid ambiguity, ordinal numbers may be used in the claims. Even if a term is given an ordinal number in the patent claims, if a different ordinal number is used in the patent claims... In some cases, an ordinal number may be attached. Also, even if a term is used with an ordinal number in this specification, In some cases, ordinal numbers may be omitted in patent claims and other documents.

[0041] In this specification, the "on state" of a transistor refers to the source of the transistor. This refers to a state where the drain can be considered electrically short-circuited (also called a "conductive state"). Furthermore, the "off state" of a transistor means that the source and drain of the transistor are electrically separated. This refers to a state that can be considered disconnected (also called a "non-conductive state").

[0042] Furthermore, in this specification, "on-current" refers to the current when the transistor is in the ON state. Sometimes, "off-current" refers to the current that flows between the transistor and the drain. It can sometimes refer to the current flowing between the source and drain when the device is in the off state.

[0043] Furthermore, in this specification, etc., the high power supply voltage VDD (hereinafter simply referred to as "VDD", "H voltage") Or also called "H") is the low power supply voltage VSS (hereinafter simply referred to as "VSS" or "L voltage"). It indicates a power supply voltage higher than VDD (also called "L"). Also, VSS is a power supply voltage higher than VDD. It indicates a power supply voltage that is even lower. Also, the ground voltage (hereinafter simply referred to as "GND" or "GN") The voltage (also called "D voltage") can also be used as VDD or VSS. For example, if VDD is connected In the case of ground voltage, VSS is a voltage lower than the ground voltage, and if VSS is the ground voltage... VDD is a voltage higher than the ground voltage.

[0044] Furthermore, in this specification, the term "gate" refers to a gate electrode and part or all of the gate wiring. It refers to the gate. Gate wiring is the gate electrode of at least one transistor and another This refers to wiring used to electrically connect electrodes or other wiring.

[0045] Furthermore, in this specification, the term "source" refers to the source region, source electrode, and source wiring. This refers to a part or all of the source region. The source region is the part of the semiconductor layer whose resistivity is below a certain value. This refers to the region. The source electrode is the conductive layer of the part connected to the source region. Source wiring refers to the connection between the source electrode of at least one transistor and another electrode or another wiring. This refers to the wiring used to electrically connect wires.

[0046] Furthermore, in this specification, the term "drain" refers to the drain region, drain electrode, and drain This refers to part or all of the in-wiring. The drain region is the part of the semiconductor layer where resistivity This refers to the region below a certain value. The drain electrode is the part of the electrode connected to the drain region. This refers to the electrochemical layer. Drain wiring refers to the drain electrode of at least one transistor and This refers to wiring used to electrically connect another electrode or another wire.

[0047] Furthermore, in drawings and other diagrams, the voltage of wiring and electrodes is made easier to understand. When adding "H" to indicate an H voltage or "L" to indicate an L voltage adjacent to electrodes, etc. There is also a symbol "H" or "L" enclosed in the text for wiring and electrodes where voltage changes occur. Sometimes it is noted in writing. Also, if the transistor is in the off state, the transistor Sometimes, an "×" symbol is added in addition to it.

[0048] (Embodiment 1) A display device according to one aspect of the present invention will be described with reference to the drawings. Figure 1 shows an electronic device 1 This is a diagram illustrating the configuration of the display device 10 owned by 00.

[0049] Note that the configuration of the display device described herein is an example and does not include all components. It is not necessary. The display device has the necessary components among the components shown in this specification, etc. It is fine if it has components other than those shown in this specification.

[0050] The electronic device 100 includes, for example, a display device 10, a circuit board 100A, an FPC 100B, and The device 10 has a control unit 100C. The display device 10 is connected to the FP via, for example, a bump 101A. It is electrically connected to C100B. Also, FPC100B is controlled via bump 101B. It is electrically connected to device 100C. Therefore, the display device 10 is connected via FPC100B. It is then electrically connected to the control device 100C.

[0051] In one aspect of the present invention, the display device 10 has a layer L1 and a layer L2. Layer L1 is a so Layer L2 has a gate driver and a part of the sensor Sen, and layer L2 has a gate driver and multiple pixels It has a primary element and the remaining part of the sensor Sen. Multiple pixels include a first pixel and a second It has a pixel and a first pixel and a second pixel which have light-emitting elements. The second pixel is Furthermore, it also has some of the functions of a gate driver. Note that the second pixel is a plurality of second images The gate driver function is realized by the collection of elements. In other words, the gate driver is It is composed of multiple second pixels. The second pixels are explained in detail in Figure 3. To clarify, the upper surface of layer L1 has an opening where part of the sensor Sen is formed, and a sourced A first terminal connected to the driver is provided, and on the back surface of the surface where the pixels of layer L2 are arranged A second terminal is provided.

[0052] The first terminal is electrically connected to the second terminal by being bonded together, and the sensor S en is formed. The first terminal is connected via a conductive bump (hereinafter referred to as bump). The first terminal and the second terminal may be electrically connected via a bump. Direct connection is called InFO (Integrated Fan-Out wave It is sometimes called r-level packaging technology. Alternatively, the first terminal and A direct joining method can be used to directly connect the second terminal. When used, it is preferable that the first terminal and the second terminal have a conductive film containing copper (Cu). Alternatively, if either the first terminal or the second terminal is a conductive film containing tungsten (W) That's fine.

[0053] The output signal of the source driver on layer L1 is transmitted via the first and second terminals. A number of pixels are given to the wiring to which they are connected. In other words, the source driver has multiple pixels. It is located below the display area. Therefore, the source driver is located on the outer edge of the display area. Alternatively, a gate driver may not be required. The display device of the electronic device has a smaller bezel area. This allows for a wider display area. Also, the source driver... Alternatively, if the gate driver is not located on the outer edge of the display area, the display area is surrounded by opposite edges. Shapes, symmetrical shapes combining straight lines and curves, shapes combining straight lines and curves Asymmetrical shapes, such as circles, ellipses, or triangles, that do not have opposite sides. Even for display areas of shapes enclosed by edges (hereafter referred to as free shapes), a gate driver or saw can be used. It is not necessary to provide an area for placing the source driver or game driver. This eliminates the need to consider the placement of the FPC that provides signals to the driver, allowing for display in any shape. This will enable the provision of display devices or electronic devices having a region.

[0054] Note that substrate 100A has a larger area than layer L2, and layer L2 has a larger area than layer L1. It is preferable that it is large. However, the substrate 100A may have the same area as layer L2. Furthermore, layer L2 may have the same area as layer L1. Note that substrate 100A is heavy with layer L2. It is preferable to position it in such a location. Also, layer L2 is positioned to overlap with layer L1. It is preferable that the display area 110 of the display device 10 is an area of ​​the same size as layer L2. It is preferable that this is the case, or that it is a region smaller than layer L2.

[0055] The light-emitting element of the first or second pixel preferably contains organic material. A light-emitting element having an object is an organic light-emitting element (OLED). It can be called an (lighting device). Alternatively, a light-emitting element is made of inorganic material. It is also acceptable to use an LED (light emitter) as a display element that has an inorganic material. Examples include ding (false) or micro-LEDs.

[0056] Furthermore, the first terminal is electrically connected to the second terminal, so that it does not overlap with the first terminal. A sensor Sen can be formed at any position. For example, the sensor Sen is at the first end A conductive layer containing the same elements as the child forms part of the sensor Sen, and the second terminal contains the same elements It is preferable that the remaining portion of the sensor Sen is formed by a conductive layer containing an element. The sensor Sen is preferably a MEMS. As a different example, the sensor Sen is the It is constructed using a conductive film containing elements from either terminal 1 or terminal 2, and elements from a different terminal. It is possible.

[0057] As an example, it is preferable that the sensor Sen of the display device 10 is an accelerometer. However, the sensor Sen is not limited to an accelerometer. For example, the sensor Sen could be a stabilization sensor. By changing the design, it can be used as a pressure sensor, gyroscope, or bolometer-type infrared sensor. What functions can it have?

[0058] The substrate 100A has a protective function for the display device. For example, the substrate 100A has glass, Quartz or plastic can be used. Note that the substrate 100A is a flexible substrate. You may use this. A flexible substrate is a substrate that can be bent (flexible). For example, plastics made from polycarbonate, polyarylate, and polyethersulfone. Examples include plastic substrates. Also, polypropylene, polyester, and polyvinyl fluoride are examples. Alternatively, films made of polyvinyl chloride or the like, or inorganic vapor-deposited films can be used. .

[0059] Figures 2A to 2D illustrate the display device 10. To simplify the explanation, the substrate 100A is not shown and its description is omitted. Also, the large size of layer L1 and layer L2 The size will not be considered. The display device 10 has pixel Pix1, pixel Pix2 ( (Having the function of a gate driver GD), gate driver GD, source driver SD, sensor Sensor Sen formed by Sensor Sen1 and Sensor Sen2, and Antenna A It has one or more of the NTs. In the case of a display device 10 having pixels Pix2 In total, pixel Pix2 functions as a gate driver. Display device 1 without pixel Pix2 If the value is 0, it is preferable that the gate driver GD exists independently.

[0060] Layer L1 has a first transistor, and layer L2 has a second transistor. The first semiconductor layer of the first transistor is the second semiconductor layer of the second transistor. It is preferable that the conductor layer contains elements different from those in the conductor layer. For example, the first semiconductor layer may contain silicon (S i) The second semiconductor layer contains oxygen, and further contains indium (In) and zinc (Zn It contains one or more of the following: ), gallium (Ga), or tin (Sn).

[0061] Therefore, it can be said that the second semiconductor layer has an oxide semiconductor. Oh, the second semiconductor layer where the transistor channel is formed is an oxide, which is a type of metal oxide. A transistor containing an oxide semiconductor (OS) is called "O It is called an "S transistor" or "OS-FET". Note that OS transistors are sensitive to temperature changes. It is known that the variation in electrical characteristics due to this is small. Also, OS transistors are semiconductors. Due to the large energy gap between the layers, several yA / μm (current value per 1 μm channel width) ) can exhibit extremely low off-current characteristics. Therefore, OS transistors It is preferable to apply it to a memory device. Note that the OS transistor is as follows: This will be described in detail in Embodiment 3 or Embodiment 4.

[0062] Furthermore, OS transistors exhibit almost no increase in off-current even in high-temperature environments. Specifically, The off-current hardly increases even at ambient temperatures between room temperature and 200°C. The on-current does not decrease easily even at lower values. Also, OS transistors have isolation between the source and drain. High voltage resistance. By using OS transistors in the transistors that make up the semiconductor device, high This enables the realization of semiconductor devices that operate stably and reliably even in high-temperature environments.

[0063] Furthermore, OS transistors form the wiring of semiconductor devices. It can be formed using the sputtering method during the process (of line). Therefore, different A single display device 10 can be formed using transistors with transistor characteristics. In other words, by using OS transistors, SOC (System on Chip) p) can be easily formed.

[0064] Figure 2A is a diagram illustrating the configuration of the display device 10 described in Figure 1, as an example. Layer L Layer 1 has source driver SD and sensor Sen1. Layer L2 has pixel Pix1, pixel It has Pix2 and sensor Sen2. Sensor Sen2 overlaps with sensor Sen1. By being positioned, it forms the sensor Sen. Note that pixel Pix1 or pixel Pi The light-emitting elements of x2 are preferably OLED, LED, or microLED. stomach.

[0065] Here, we will describe a display device 10 having a display area capable of displaying high-resolution images. For example, the display device 10 can be applied to a head-mounted display, etc. preferable.

[0066] The resolution of pixels Pix formed in layer L2 is determined by the manufacturing equipment in the transistor fabrication process. It is determined by the processing resolution. For example, the number of transistors that can be formed on a silicon substrate The gate length is an order of magnitude shorter than the smallest gate length of a transistor that can be formed on a glass substrate. It can be made smaller. Therefore, a high-resolution display area can be shaped on a silicon substrate. It is preferable to do so.

[0067] As an example, pixel Pix1 and pixel Pix2 which has the function of a gate driver GD The layer L2 has each pixel formed on the silicon substrate, and then the silicon substrate is peeled off. They are formed separately. The peeled silicon substrate can be used again as a substrate when forming layer L2. It can be used. Therefore, by reusing the substrate for forming layer L2, the material Costs can be reduced.

[0068] Next, it is preferable that layer L1 be formed on a silicon substrate. Layer L1 is at least It has a source driver SD. The source driver SD converts digital signals to analog signals. Because it has a function to replace, it is required to operate at high speed. Also, the source driver SD is Multiple pixels are connected to the wiring provided within the display area to be connected. In other words, The wiring has a large capacitive load with added parasitic capacitance. Therefore, the source driver SD requires a high current supply capacity to charge and discharge the capacitive load in question.

[0069] Furthermore, the source driver SD of layer L1 is composed of multiple pixels of layer L2. Functionality can be achieved in an area smaller than the display area. For example, a free-form design When a layer L1 having the same size and shape as layer L2, which has a display area, is processed as a chip, This presents a challenge: the number of pieces that can be cut from a single silicon substrate decreases, leading to higher material costs. The area of ​​the source driver SD in layer L1 is larger than the area of ​​the display area in layer L2. Often the amount is small. Therefore, layer L1 is formed independently of layer L2 and then bonded together. This can reduce material costs.

[0070] Furthermore, layer L1 allows for the placement of sensor Sen1 above source driver SD. Furthermore, the sensor Sen2 in layer L2 is positioned to overlap with the sensor Sen1. By bonding layer L1 and layer L2, sensor Sen becomes sensor Sen1 and sensor Sen It is formed by 2. The sensor Sen is preferably a MEMS.

[0071] The sensor Sen will be explained in detail in Figures 6A and 6B, but as an example, Sen The case where sensor Sen1 has first to third electrodes will be described. The change in capacitance formed between the first electrode and the third electrode is detected, and the second electrode and the third electrode The change in capacitance formed between the electrode is detected. Note that a portion of the third electrode is formed in layer L2. It is preferable that the sensor Sen2 is formed in layer L2, so that the sensor Sen is , not only lateral motion or acceleration, but also vertical motion, acceleration, or pressure such as pressing. It can be detected.

[0072] Figure 2B illustrates a display device 10A with a different configuration from the display device 10 described in Figure 2A. This is a diagram. The display device 10A has a gate driver GD and a source driver SD on layer L1. The points formed are different from those of the display device 10. Therefore, layer L2 has multiple pixels P A sensor Sen2 is provided on the opposite side of layer L2, where the pixels Pix1 of layer L2 are located, and which has ix1. By electrically connecting the first terminal and the second terminal, a position that does not overlap with the first terminal is achieved. A sensor is formed at this location.

[0073] Figure 2C illustrates a display device 10B with a different configuration from the display device 10A described in Figure 2B. This is a diagram showing that the display device 10B displays that layer L1 has layers L1A and L1B. It differs from device 10A. A source driver SD is formed in layer L1A, and in layer L1B The difference is that the gate driver GD and sensor Sen1 are formed. Layer L1A has a first transistor, and layer L1B has a second transistor. Therefore, since layer L1B is bonded to layer L2, the first transistor and the second transistor The ZISTA will have a layered structure.

[0074] Figure 2D illustrates a display device 10C with a different configuration from the display device 10A described in Figure 2B. This is a diagram. Display device 10C differs from display device 10A in that it has an antenna ANT. It is. Also, the display device 10C displays that layer L2 has layers L2A and L2B. It differs from device 10A. An antenna ANT is formed in layer L2A, and in layer L2B, Pixel Pix1 is formed. Layer L2B has a second transistor. It is preferable that multiple antennas ANT be formed there. Each antenna ANT is It is electrically connected to the third terminal of layer L1, and the third terminal is the same as the first terminal. It is preferable that it contains an element.

[0075] Figure 3 is a circuit diagram that explains in detail layer L2 of the display device 10. Multiple pixels 40, multiple pixels 40A, multiple pixels 40B, multiple wiring 45, multiple wiring It has 46, wiring 48, and multiple wirings 49. Note that the pixel 40 is described in the display device 10. The revealed pixel Pix1 corresponds to pixel Pix2, and the function of the gate driver GD is distributed and included It is preferable to do so. Therefore, pixels 40A and 40B are described in the display device 10. This corresponds to pixel Pix2. Note that the gate driver GD is shown in Figures 7, 8A and This will be explained in detail in Figure 8B.

[0076] For example, each wiring 49 has multiple pixels 40, pixels 40A, and pixels 40B They are electrically connected. Pixel 40A is a circuit that has some of the functions of the gate driver GD. Pixel 40D1 has the remaining function of the gate driver GD, and the circuit 40D2 has the remaining function of the gate driver GD. It has. Therefore, it is gated by circuits 40D1 and 40D2 connected to wiring 49. The circuit for one stage of the gate driver GD is formed. Figure 3 shows the function of one stage of the gate driver GD. The image shows an example where the elements are distributed across two pixels, but it includes the functionality of the gate driver GD. The number of primes is not limited. For example, the function of one stage of a gate driver (GD) is equivalent to three or more pixels. They can be distributed and arranged in a manner.

[0077] First, let's discuss the gate driver composed of circuits 40D1 and 40D2. To clarify, circuit 40D1 has input terminals LIN, CK1, and output terminal NDO. The circuit 40D2 has input terminal CK2, input terminal NDI, output terminal FO, and output terminal It has SROUT.

[0078] As an example, wiring 48 connects to at least input terminal LIN, input terminal CK1, or input terminal It is electrically connected to one of the child CK2s. Output terminal NDO is electrically connected to input terminal NDI. It is connected to the output terminal FO. The output terminal FO is electrically connected to wiring 49(n-1). n-1) is electrically connected to pixel 40, pixel 40A, and pixel 40B. Output terminal SROUT is the circuit 40D1 of pixel 40A which is electrically connected to wiring 49(n) It is electrically connected to the input terminal LIN. Note that n is a positive integer.

[0079] Input terminals LIN, CK1, and CK2 are connected to circuit 40D1 via wiring 48. And a signal is given to drive circuit 40D2. The signal given to output terminal NDO The signal is the output signal of circuit 40D1. This output signal is connected to the input terminal NDI of circuit 40D2. The output signal supplied to the output terminal FO corresponds to the scanning signal in the display device. The output terminal SROUT has a pixel 40A that is electrically connected to wiring 49(n). A carry signal is provided to drive circuit 40D1.

[0080] Next, we will explain pixel 40, pixel 40A, and pixel 40B. Pixel 40, pixel Pixels 40A and 40B have light-emitting elements and control the intensity of the light emitted by the light-emitting elements. This is possible. Pixel 40 will be explained in detail in Figures 9A to 9D.

[0081] Here, as an example, we will explain pixel 40(m, n). Pixel 40(m, n) is It is electrically connected to wiring 45(m), wiring 46(m), and wiring 49(n). At 45(m), the first terminal and the second terminal are connected from the source driver SD of layer L1. Image data is provided via this. The wiring 46(m) contains the source driver S of layer L1. A reset signal is supplied from D via the first and second terminals. Note that pixel 40 (m, n) is the threshold fluctuation amount of the second transistor in pixel 40(m, n), or Wiring a monitor signal to monitor changes in the electrical characteristics of pixels, such as the amount of brightness degradation of the optical element. The output can be 46(m), where m is a positive integer.

[0082] The output terminal of the source driver SD is located at one of the positions within the display area, with wiring 45 and wiring It is electrically connected to 46. The display area is defined as the area where the pixels 40 electrically connected to the wiring 45 are This refers to the direction of extension. Outside the display area means that there are no pixels 40 electrically connected to the wiring 45. It means the direction.

[0083] Furthermore, the source driver SD is positioned along a direction perpendicular to the multiple wires 45. This is preferable. Therefore, the source driver wires through the first terminal and the second terminal. When electrically connected to 45 or wiring 46, the shortest distance connection is possible.

[0084] Furthermore, some of the wiring 48 may be routed outside the display area. The reason is as follows: Circuits 40D1 and 40D2, located at the edges of the indicated area, are connected to circuit 4 via wiring 48. It is necessary to provide control signals to drive 0D1 and circuit 40D2. The signal is provided by the timing controller of layer L1. The controller will be explained in detail in Figure 4A.

[0085] Figures 4A and 4B illustrate the display device 10. Figure 4A shows the display device 10. This diagram uses a perspective view for explanation, and Figure 4B uses a schematic cross-sectional view of the display device 10 for explanation. This is the figure. Furthermore, the explanation of layer L2 can be found in the explanation in Figure 3. Therefore, In the configuration of the invention described below, identical parts or parts having similar functions are identical The same symbols are used across different drawings, and their explanations are omitted if they are repeated.

[0086] Figure 4A shows source driver 20A, where layer L1 functions as source driver SD, source It has a driver 20B and a timing controller 30. The source driver 20A is It has the function of outputting image data. The source driver 20B outputs a reset signal. It has the function of monitoring changes in the electrical characteristics of the pixel 40. It has a monitoring function.

[0087] As an example, the output terminal 20A1 of the source driver 20A is a first terminal and a second terminal It is electrically connected to the wiring 45(m) within the display area via the child. Source driver 20B Output terminal 20B1 is connected to the first and second terminals via wiring 46(m) within the display area. It is electrically connected to it.

[0088] The timing controller has an output terminal 30a that connects to the first terminal and the second terminal via a layer It is electrically connected to the wiring 48 of L2. A portion of the wiring 48 is located on the outer edge of the display area. It is positioned and, in part, electrically connected to multiple circuits 40D1 and multiple circuits 40D2 within the display area. It will continue.

[0089] Figure 4B shows a portion of a schematic cross-sectional view of the display device 10. As an example, layer L1 is so It has a source driver 20A and a source driver 20B, and layer L2 has pixels 40. Note that in Figure 4B, the illustration of pixels 40A and 40B is omitted. Element 40 is, as an example, a light-emitting element 41, a transistor 42, a transistor 43, a transistor The diagram shows the st 44. The light-emitting element 41 emits light in the direction of the substrate 100A. The pixel circuit of pixel 40 will be explained in detail in Figures 9A to 9D.

[0090] Furthermore, the source driver 20A of layer L1 is connected via plug 57b and electrode 61b. It is electrically connected to the wiring 45. Also, the source driver 20B is plugged with plug 57a and This indicates that the wiring 46 is electrically connected via electrode 61a. Note that plug 57a and Plug 57b corresponds to the first terminal, and electrodes 61a and 61b correspond to the second terminal. It corresponds to.

[0091] Figures 5A and 5B illustrate a different display device 10 from those shown in Figures 4A and 4B. Figure 5A is a diagram illustrating the display device 10 using a perspective view, and Figure 5B is a diagram illustrating the display device 1 This diagram explains the concept using a schematic cross-sectional view of layer 0. Note that the explanation of layer L2 is provided in Figures 4A and 4B. The explanation can be taken into consideration. Therefore, in the configuration of the invention described below, the same The same reference numeral is used in common across different drawings for parts or parts having similar functions. I will omit repeating the explanation.

[0092] Figure 5A shows the table explained in Figures 4A and 4B, which shows that the display device 10 has a sensor 20C. This differs from the shown device 10. Figure 5A illustrates that layer L1 has sensor 20C1. Sensor 20C1 is sandwiched between source driver 20A and source driver 20B. It is positioned as such. However, the position in which sensor 20C1 is placed is not limited.

[0093] Figure 5B shows a portion of a schematic cross-sectional view of the display device 10. Layer L1 contains the sensor 20C. A sensor 20C1, which is part of the structure, is provided in layer L2. Sensor 20C2 is provided above sensor 20C1. Sensor 20C is provided above sensor 20C1. This MEMS functions when 20C2 is placed in place. For details on sensor 20C, see Figure 6A. This will be explained in detail in Figure 6B.

[0094] Furthermore, Figure 5B shows the bump 59 (bump 59a) for bonding layer L1 and layer L2 together. and has bump 59b). Bump 59 is used to bond layer L1 and layer L2. Between layer L1 and layer L2, there is a distance equal to the height of bump 59 between sensor 20C1 and sensor 20C2. A space is formed between them. This space provides a capacitive component between sensor 20C1 and sensor 20C2. Forms. Therefore, the capacitance component receives acceleration from the same direction as the display direction of the display device. It is suitable for detecting degrees or pressure.

[0095] Figures 6A and 6B are diagrams illustrating the sensor 20C described in Figure 5B in detail. Sa20C is composed of electrodes 51a to 51c and electrode 61c.

[0096] Furthermore, around the sensor 20C, as an example, the source driver 20A of layer L1 Alternatively, the source driver 20B may be electrically connected to wiring 45 and wiring 46 of layer L2. Bump 59a or bump 59b is placed for this purpose. Bump 59 is located in layer L1 and It is preferable to use multiple layers to electrically connect to layer L2.

[0097] Figure 6A shows a schematic cross-sectional view of sensor 20C along the dashed line X1-X2. In the schematic diagram, the sensor 20C is shown as the center, and therefore the source driver of layer L1 is shown. 20A, source driver 20B, and pixels 40 of layer L2 are not shown due to space limitations on the page. Therefore, below plug 55a or plug 55e is the source driver 20A. The source driver 20B is electrically connected, and furthermore, plugs 63a to 63c The explanation continues by stating that pixel 40 is electrically connected to the upper part of the image.

[0098] First, let's explain layer L1. The insulating layer 72 has multiple conductive plugs 55a to 5 5d is formed. The insulating layer 74 is formed on the insulating layer 72. The insulating layer 74 has openings. It has a part and has a sensor 20C1 inside the opening. When forming an opening for, an opening for forming plug 57a, plug 57b Next, a conductive film is formed, thereby forming plug 57a, plug 57b, and the opening The opening can be filled with a conductive film.

[0099] Next, CMP (Chemical Mechanical Polishing): Using a mechanical polishing method, the conductive film is polished and flattened until the insulating layer 74 is exposed. The conductive film formed at the opening is processed by dry etching to form electrodes 51a to 51c The plugs 57a and 57b are topped with bumps 59a and 59b. A timing cord is formed in layer L1. It is electrically connected to the controller, etc. by the detection circuit included in the timing controller. The sensor 20C1 detects changes in the capacitance values ​​(first capacitance and second capacitance). ru.

[0100] By forming electrodes 51a to 51c, a space 58 is formed in the sensor 20C1. The first capacitance is generated by the space 58 sandwiched between electrodes 51a and 51c. The first capacity is due to the space 58 sandwiched between electrodes 51b and 51c. This is the generated volume. The third volume is determined by the heights of bumps 59a and 59b. The space generated by the formed electrode 61c and the space between electrodes 51a and 51c This is capacity. The third capacity is in the same direction as the light emission direction of the light-emitting element of the display device, or This is suitable for detecting acceleration received from the opposite direction. Note that electrode 51a is plug 55c It is electrically connected to the plug 55d. Electrode 51c is It is electrically connected to plug 55e. Electrode 61c is electrically connected to plug 63c.

[0101] Next, let's explain layer L2. Layer L2 has electrodes 61a on the back surface of the surface where the pixels are arranged, and electrodes Electrodes 61b and 61c are exposed. Note that electrodes 61a and 61b, and The electrode 61c is formed by embedding it in the insulating film 76. On top of the insulating film 76 is the insulating film 78 A plug 63a and a plug 63b are formed in the insulating film 78. Plug 63a is electrically connected to electrode 61a. Plug 63b is electrically connected to electrode 61b. They are connected by air.

[0102] Bumps 59a and 59b are used to electrically connect layer L2 to layer L1. It has a function. In other words, bump 59a electrically connects plug 57a and electrode 61a. Next, the output signals of the source driver SD, etc., of layer L1 are sent to the pixels of layer L2. It can be provided. Also, bump 59b electrically connects plug 57b and electrode 61b. The output signals such as the source driver SD of layer L1 are then applied to the pixels of layer L2. It is possible to obtain it.

[0103] Figure 6B is a diagram illustrating a cross-section of sensor 20, different from that shown in Figure 6A. Figure 6B shows electrode 6 1c is electrically connected to electrode 51c via bump 59c. Electrode 61c is Preferably, the electrode 6 is electrically connected to the electrode 51c via a plurality of bumps 59c. 1c is electrically connected to electrode 51c, so that the same direction as the light emission direction of the light-emitting element is also Alternatively, the strain on electrode 61c due to acceleration received from the opposite direction is transmitted to electrode 51c, and electrode 5 The change due to the strain of 1c is detected as a change in the capacitance value of the first to third capacitances. Therefore, Therefore, the display device 10 does not need to have multiple acceleration sensors to receive signals from all directions. It is possible to detect acceleration from that point.

[0104] <Example configuration of gate driver GD> Figure 7 shows circuits 40D1 and 4, which are distributed and arranged in pixels 40A and 40B. This is a block diagram that extracts and explains only 0D2. The gate driver GD is an n-channel type gate It has multiple circuits 40D composed of transistors. Note that the circuits 40D are shown in Figure 3. The circuit 40D1 and circuit 40D2 described are included. For circuit 40D, see Figure 8A. This will be explained in detail in Figure 8B.

[0105] The gate driver GD receives signal SP via wiring 48a, and wiring 48b to wiring 48e. Signals CLK[1] to CLK[4] via the wiring 48f, signal PWC via the wiring, and wiring Signal RES is applied via 48g. Signal SP is the start pulse signal. Signal R ES is a reset signal, and by setting the signal RES to a high potential, for example, the output of circuit 40D All can be set to low potential. The signal PWC is a pulse width control signal. The control unit has the function of controlling the pulse width of the signal that circuit 40D outputs to wiring 49. Signal C LK[1], signal CLK[2], signal CLK[3], and signal CLK[4] are clock signals The circuit 40D has, for example, two of the signals CLK[1] to CLK[4]. Gives a signal.

[0106] For example, in the configuration shown in Figure 7, the circuit 40D is electrically connected to other wiring, This can also be applied to the source driver SD.

[0107] FIG. 8A is a diagram for explaining circuit 40D. Circuit 40D includes circuit 40D1 and circuit 40D2. Circuit 40D has an input terminal LIN, an input terminal CK1, an input terminal CK 2, an input terminal PWC, an input terminal RES, an output terminal FO, and an output terminal SROUT.

[0108] For circuit 40D1, a signal SP or a carry signal is provided via the output terminal SROUT of the previous-stage circuit 40D2 through the input terminal LIN. Also, a clock signal is provided to circuit 40D1 through the input terminal CK1. Further, a reset signal is provided to circuit 40D1 through the input terminal RES. Circuit 40D1 has an output terminal NDO, and an intermediate signal generated by circuit 40D1 is output to the output terminal NDO.

[0109] Circuit 40D2 has an input terminal NDI, and the intermediate signal generated by circuit 40D1 is provided to the input terminal NDI. A clock signal is provided to circuit 40D2 through the input terminal CK2. Also, a pulse-width control signal is provided to circuit 40D2 through the input terminal PWC. Circuit 40D2 provides a carry signal to the input terminal LIN of the next-stage circuit 40D1 through the output terminal SROUT. Further, circuit 40D2 provides a scanning signal to the wire 49 through the output terminal FO.

[0110] FIG. 8B is a circuit diagram for explaining circuit 40D in detail. Circuit 40D includes transistors 81 to 91 and capacitors 94 to 96.

[0111] One of the source or drain of transistor 81 is connected to one of the source or drain of transistor 82. ​​​​​​​​​​​One side of the input, one side of the source or drain of transistor 86, and the source of transistor 89. It is electrically connected to either the drain or the casing. The gate of transistor 82 is connected to the casing. One of the sources or drains of transistor 83, and one of the sources or drains of transistor 84. On the other hand, either the source or drain of transistor 85, and the gate of transistor 88, The gate of the zista 91 and one electrode of the capacitor 94 are electrically connected. The source or drain of transistor 86 is connected to the gate of transistor 87, and the other to capacitor 95. It is electrically connected to the electrodes. The source or drain of transistor 89 is connected to the other side. The gate of the transistor 90 and one electrode of the capacitor 96 are electrically connected. Either the source or drain of transistor 90 is connected to either the source or drain of transistor 91. One side, and the other side of the capacitance 96, and are electrically connected to the wiring 49 via the output terminal FO. ru.

[0112] The gates of transistor 81 and transistor 85 are input to the signal LIN. The signal CLK[3] is input to the gate of transistor 83. The signal RES is input to the gate of transistor 4. One of the source or drains of transistor 87. The signal CLK[1] is input to either the source or drain of transistor 90. A signal PWC is input to it. The other side of the source or drain of transistor 87, From one electrode of the zista 88 (source or drain) and the other electrode of the capacitance 95, the signal SRO UT is output.

[0113] The other side of the source or drain of transistor 81, and the source or drain of transistor 83 On the other side of transistor 84, the source or drain of transistor 84, the gate of transistor 86, And the potential VDD is supplied to the gate of transistor 89. The other side of the source or drain of transistor 85, transistor The other side of the source or drain of transistor 88, the other side of the source or drain of transistor 91, and The other electrode, with a capacitance of 94, is supplied with a potential VSS.

[0114] Circuit 40D1 has transistors 81 through 85 and a capacitor 94. Circuit 40D2 consists of transistors 86 through 91, capacitor 95, and capacitor 96. It has either the source or the drain of transistor 81 and the source or the drain of transistor 86. For explanatory purposes, we will refer to the wiring to which one side of the drain is electrically connected as node ND2. Furthermore, the gate of transistor 82 and the gate of transistor 88 are electrically connected. Let's call the line node ND3 for explanatory purposes.

[0115] The input terminal NDI is electrically connected to the output terminal NDO via nodes ND2 and ND3. The process continues. In Figure 8B, the signal CLK[3] is applied to the input terminal CK1, and the input terminal This example shows the signal CLK[1] being applied to CK2.

[0116] <Example of Pix configuration> Figures 9A to 9D are circuit diagrams that explain pixel 40 in detail.

[0117] The pixel 40 in Figure 9A consists of a light-emitting element 41, transistors 42 to 44, and a capacitor C It has 1. One of the electrodes of the light-emitting element 41 is one of the source or drain of the transistor 43. One of the source or drain of the transistor 44, and one of the electrodes of the capacitor C1 are electrically connected. The gate of the transistor 43 is electrically connected to the other electrode of the capacitor C1 and one of the source or drain of the transistor 4 2. The other of the source or drain of the transistor 42 is electrically connected to the wiring 45. The gate of the transistor 42 is electrically connected to the wiring 4 9a. The other of the source or drain of the transistor 43 is electrically connected to the wiring An o. The gate of the transistor 44 is electrically connected to the wiring 49b . The other of the source or drain of the transistor 44 is electrically connected to the wiring 46. The other electrode of the light-emitting element 41 is electrically connected to the wiring Cath.

[0118] The transistors 42 to 44 are preferably OS transistors. However, the transistors 42 to 44 are not limited to OS transistors. For example, silicon can be used for the semiconductor layer. As an example, amorphous silicon, poly crystalline silicon, low-temperature polysilicon (LTPS: Low Temperature Pol y-Silicon), or single-crystalline silicon can be used.

[0119] FIG. 9B shows that the transistors included in the pixel 40 are different from those in FIG. 9A. As an example, the trans istors 42 to 44 each have a back gate. The back gate is arranged so as to sandwich the channel formation region of the second semiconductor layer between the gate and the back gate. The back gate can function in the same manner as the gate. Also, by changing the voltage of the back gate, the threshold voltage of the transistor can be changed. The back gate The voltage may be the same as the gate voltage, or it may be GND or any other voltage.

[0120] Furthermore, since the gate and back gate are generally formed by conductive layers, the outside of the transistor A function to prevent the electric field generated from acting on the semiconductor layer in which the channel is formed (especially electrostatic) It has an electrostatic shielding function against air. That is, it is affected by the influence of external electric fields such as static electricity. This prevents fluctuations in the electrical characteristics of the transistor.

[0121] Figure 9C is a diagram illustrating a different pixel 40 from that in Figure 9A. Figure 9C further illustrates the transient Pixel 42a differs from pixel 40 in Figure 9A in that it has a capacitance C2. Further details are provided below. In the configuration of the invention, parts identical to or having a similar function as those in Figure 9A are indicated by the same reference numerals. We will use the same term in common and omit repeating its explanation.

[0122] The gate of transistor 42a is electrically connected to wiring 49b. Transistor 42 Either the source or drain of transistor a is electrically connected to wiring 45b. Transistor 42 The other end of the source or drain of a is electrically connected to one of the electrodes of capacitance C2. Capacitance C The other end of electrode 2 is electrically connected to the gate of transistor 43.

[0123] The voltage applied to the gate of transistor 43 is the voltage applied to capacitor C1, and the voltage applied to capacitor C It is determined by the capacitive coupling of the voltage applied to 2. Therefore, the output of the source driver A voltage value greater than the maximum voltage can be assigned to a pixel as image data.

[0124] Pixel 40, as explained in Figure 9C, is the first image data to be given to capacity C1 and the first image data to be given to capacity C2. The second image data is then processed by capacitive coupling to generate a third image data. Yes, it's possible. This is a selector switch using an OS transistor, which has the characteristic of having a low off-current. This can be achieved by using it as such. As shown in pixel 40, the pixel has computational capabilities. This can be called Pixel AI technology.

[0125] Figure 9D is a diagram illustrating a pixel 40 having a liquid crystal element. Figure 9D shows a transistor 4 2. It has a capacitor C1 and a liquid crystal element LC. The gate of transistor 42 is connected to wiring 49a. It is electrically connected to the source or drain of transistor 42. They are electrically connected. The source or drain of transistor 42 is connected to the electrode of capacitor C1. On the other hand, it is electrically connected to one of the electrodes of the liquid crystal element LC. The other electrode of capacitance C1 is connected to the wiring. It is electrically connected to 47. The other electrode of the liquid crystal element LC is electrically connected to the wiring Com. The other electrode of capacitance C1 may be electrically connected to the wiring Com.

[0126] Furthermore, Pixel AI technology can be applied to pixel 40 in Figure 9D. For example, By providing a transistor 42a and a capacitor C2 in pixel 40 of Figure 9D, AI technology can be applied.

[0127] For example, it can be incorporated into wearable electronic devices such as head-mounted displays. In the case of display devices, there is a need for devices that are small, lightweight, or capable of displaying high-resolution images. Also, changing the position or direction of the head while wearing a head-mounted display. Therefore, the displayed information also needs to change accordingly. Thus, the display device 10 must include an acceleration sensor. By providing this, information detected by acceleration sensors placed at different locations can be used The display data is updated, resulting in improved responsiveness to the displayed content.

[0128] Therefore, below the L2 layer, which has a display area of ​​any shape, the source driver and the like are included. By bonding layers L1 together, it is possible to provide display devices and other devices of various shapes. The display device 10 provides a display device with a novel configuration by including an acceleration sensor. This is possible. Alternatively, the display device includes MEMS as a component, resulting in a display with good productivity. Display devices and the like can be provided. As described above, the display device 10 has pixels, gated Because it includes drivers, source drivers, and MEMS as components, it is used in electronic devices. The number of components can be reduced. Also, pixels using capacitive coupling are source drivers A voltage greater than the maximum output voltage can be applied to the pixels as image data. Therefore, Therefore, electronic devices having a display device 10 can reduce power consumption.

[0129] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0130] (Embodiment 2) A display device according to one aspect of the present invention will be described with reference to the drawings. Figures 10A and 1 Figure 0B is a diagram illustrating a configuration of the display device 10 that differs from that of Embodiment 1. In the configuration of the invention described, the same part as in Embodiment 1 or a part having a similar function is The same reference numeral is used consistently across different drawings, and its explanation is omitted if repeated.

[0131] The display device 10 described in Figure 10A has layer L1 which further has multiple transmitting and receiving devices, and layer L2A differs from Figure 5A in that it has multiple antenna regions. The container region is a state in which electrodes 61a and 61b are exposed on the back surface of the surface where the pixels are arranged. This is preferable. Furthermore, multiple antennas are provided in the antenna region.

[0132] For example, the antenna region consists of multiple antenna regions ANT1 and multiple antenna regions A It has NT2. The frequency band transmitted and received by antenna region ANT1 is the same as that of antenna region ANT The frequency band used by device 2 for transmission and reception is the same as, or different from, that of device 2.

[0133] For example, the antenna of the antenna region ANT1 and the transceiver 20D1 are located in an overlapping position. It is preferable that the antenna and transceiver 20D are arranged in the antenna region ANT1. 1 is electrically connected to the amplifier circuit of the transceiver 20D1 at the shortest distance. It is preferable. Also, the antenna and the transceiver 20D2 of the antenna region ANT2 are as close together as possible. It is preferable to be electrically connected to the amplifier circuit of the transmitting / receiving device 20D2 at a distance of [specified distance].

[0134] For example, the length of the wiring connecting the antenna and the amplifier circuit is such that It is preferable that the length of the wire connecting the NA to the electrically connected amplifier circuit be the same as the length of the wire connecting the NA to the amplifier circuit. i. The length of the wiring electrically connecting each antenna and amplifier circuit should be the same. This suppresses variations in transmitted and received signals that change depending on the length of the wiring.

[0135] As a different example, consider the length of the wiring that electrically connects each antenna and amplifier circuit. By intentionally using different lengths, the receivable frequency band can be widened. Because the impedance components of the wiring differ due to the difference in length, the wiring is filtered. It can function as part of a larger system.

[0136] Figure 10B shows a portion of a schematic cross-sectional view of the display device 10. Layer L1 contains the transmitting and receiving device. Layer 20D is provided, and furthermore, electrode 61d, which functions as an antenna, is provided in layer L2A. This differs from Figure 5B in several respects. Electrode 61d will be explained in detail in Figure 11.

[0137] Furthermore, between layer L1 and layer L2A, there is a bump 59 (bump) to bond the two together. It has 59a, 59b, and 59c). Electrode 61d is plugged 57c via bump 59c. It is electrically connected to the transmitter / receiver 20D. By using bump 59 to bond layer L1 and layer L2A, a gap is created between layer L1 and layer L2. A space is formed by the height of the bump 59. This space is an insulating film in contact with electrode 61d. It has the effect of reducing the contact area with electrode 61d which functions as an antenna. The edge film functions as a dielectric material during transmission and reception via the antenna. In other words, it acts as an electrode. The presence of many dielectric materials in contact with 61d results in a proportionally added capacitive impedance. Therefore, when designing electrode 61d, the target frequency and the relative induction of the insulating film should be considered. It is preferable to design the system taking the power efficiency into consideration.

[0138] In Figure 10B, layer L1 is electrically connected to layers L2A and L2B via bump 59. While one example was shown, another example is when layer L1 passes through layer L2A and layer L2B without going through bump 59. It can be directly joined to the plug 57a of layer L1 and layer L2A. It is preferable that the electrode 61a of layer L2B is a conductive film containing copper (Cu). Alternatively, either the plug 57a or the electrode 61a may be made of tungsten (W).

[0139] Figure 11 is a diagram that provides a detailed explanation of the antenna described in Figure 10B. The upper part of Figure 11 is This is a top view illustrating antenna regions ANT1 and ANT2. Next, the electrodes 61d that function as multiple antennas are provided within the antenna region ANT2. I will explain about that.

[0140] For example, when communicating using 5G, the frequency bands used are 3.7GHz, 4.5GHz, or 28GHz. Communication can be performed using multiple frequency bands, such as the antenna region (ANT). When electrode 61d, which functions as an antenna on 2, performs communication using 28GHz I will explain about this.

[0141] Furthermore, the electrode 61d of the antenna region ANT2 is a patch antenna (microstrip) This explains the case where it consists of a flat antenna or a microstrip patch antenna. A patch antenna is an array of conductive films processed into multiple squares. It is composed of the following. The distance d between each electrode 61d is determined by the frequency band to be transmitted and received. This is determined. For example, if the frequency band is 28 GHz, the distance d1 will be approximately 5 mm. This can be calculated using the following formula 1.

[0142] Distance d[m] = (speed of light [m / s] / frequency band [s] -1 ]) / twenty one)

[0143] The length of one side of electrode 61d, which functions as an antenna, is the length of the insulating film in contact with the antenna. The relative permittivity has an effect. For example, the length of one side of electrode 61d can be calculated using the following formula 2. It is possible.

[0144] Side length [m] = distance d [m] / √relative permittivity (2)

[0145] For example, if the relative permittivity of a typical insulating film, silicon dioxide, is 3.9, then the electrode The length of one side of 61d is approximately 2.5 mm. However, the distance d and the length of one side are the same for both sending and receiving. It is preferable to appropriately change the frequency band to be transmitted and the relative permittivity in contact with the antenna. For example, the antenna region ANT1 has electrodes 61e that function as multiple antennas. (Figure) As shown in 11, the distance d2 between electrodes 61e is greater than the distance d1. In other words, The frequency band transmitted and received by electrode 61e of the antenna region ANT1 is at least 28 GHz. This means it is smaller than z.

[0146] In other words, antenna regions that transmit and receive in different frequency bands are located adjacent to each other or alternately. By arranging them, it becomes possible to transmit and receive signals in different frequency bands. In 5G communication... Depending on the environment in which the electronic device is placed, the frequency band used may be switched. For example, by arranging antenna regions that transmit and receive in different frequency bands alternately, the target can be... Only the antenna region corresponding to the target frequency band transmits and receives signals, while the other frequency bands are not targeted. The antenna region becomes inactive, thus improving the signal-to-noise ratio.

[0147] The lower part of Figure 11 illustrates a schematic cross-sectional view of electrode 61d along the dashed line X1-X2 in the top view. This is a diagram illustrating the cross-sectional view. Note that in this schematic cross-sectional view, the electrode 61d is shown as the center, so layer L The source driver 20A, source driver 20B, transceiver 20D, and layer L2 of 1 are Pixels 40 and other elements are not shown due to space limitations on the page. Therefore, plugs 55a to Below the plug 55c are the source driver 20A, source driver 20B, and the transceiver unit. The 20D is electrically connected, and furthermore, above plugs 63a and 63b are the pixels 40 is electrically connected. As shown in the lower part of Figure 11, electrode 61d is connected to bump 59c in order. , electrically connected to the transceiver 20D via plugs 57c and 55c over the shortest distance. It is preferable to do so.

[0148] Figure 12 is a diagram illustrating an example configuration of a wireless transceiver 900 as an example of a transceiver 20D. Yes, there is. The wireless transceiver 900 has a low-noise amplifier 901 (LNA: Low Noise A mplifier), Bandpass filter 902 (BPF: Band Pass Filter) ter), mixer 903 (MIX: Mixer), bandpass filter 904, demodulator 9 05 (DEM: Demodulator), Power Amplifier 911 (PA: Power A mplifier), bandpass filter 912, mixer 913, bandpass filter 9 14. Modulator 915 (MOD), Duplexer 921 (DUP) exer), local oscillator 922 (LO), and It has an antenna 931. Note that the antenna 931 is electrode 61d or electrode 61e as shown in Figure 11. It corresponds to this.

[0149] <Received> Signal 941 transmitted from other semiconductor devices or base stations, etc., is received by antenna 931 and The signal is input to the low-noise amplifier 901 as a received signal via the common element 921. Device 1 has the function of transmitting and receiving wireless signals with a single antenna.

[0150] The low-noise amplifier 901 provides a signal strength that allows the wireless transceiver 900 to process weak received signals. It has the function of amplifying the signal. The signal 941 amplified by the low-noise amplifier 901 is band-pass It is supplied to the mixer 903 via the filter 902.

[0151] The bandpass filter 902 selects the necessary frequencies from the frequency components contained in the signal 941. It has the function of attenuating frequency components outside of a certain frequency band and allowing the necessary frequency band to pass through.

[0152] Mixer 903 combines the signal 941 that has passed through bandpass filter 902 with local oscillator 92 It has the function of mixing the signal 943 generated in step 2 using a superheterodyne method. The device 903 mixes signals 941 and 943, and records the frequency components of the difference between the two signals and the frequency components of their sum. A signal with this characteristic is supplied to the bandpass filter 904.

[0153] The bandpass filter 904 is a device that allows one of two frequency components to pass through. It has the ability to pass through the difference frequency components. Also, the bandpass filter 904 It also has the function of removing noise components generated in the mixer 903. Bandpass filter 904 The signal that has passed through is supplied to the demodulator 905. The demodulator 905 controls the supplied signal. It has the function of converting signals and data signals and outputting them. The numbers are supplied to various processing units (arithmetic units, memory devices, etc.).

[0154] <Send> The modulator 915 transmits control signals and data signals from the wireless transceiver 900 to other semiconductor devices. Alternatively, it has the function of generating basic signals for transmission to base stations, etc. The basic signals are band It is supplied to the mixer 913 via the dopass filter 914.

[0155] The bandpass filter 914 generates noise when the modulator 915 generates the fundamental signal. It has a function to remove particles.

[0156] Mixer 913 combines the fundamental signal that has passed through the bandpass filter 914 with the local oscillator 922 It has the function of mixing the generated signal 944 using a superheterodyne method. 913 mixes the fundamental signal and signal 944, and has the frequency components of the difference and the frequency components of the sum of the two. The signal is then supplied to the bandpass filter 912.

[0157] The bandpass filter 912 is a device that allows one of two frequency components to pass through. It has the ability to pass through the sum of frequency components. Also, the bandpass filter 912 It also has the function of removing noise components generated in the mixer 913. Bandpass filter 912 The signal that has passed through is supplied to the power amplifier 911.

[0158] The power amplifier 911 has the function of amplifying the supplied signal to generate the signal 942. Signal 942 is radiated to the outside from antenna 931 via shared device 921.

[0159] Figure 13 shows a modified version of the wireless transceiver 900 described above, the wireless transceiver 900A. I will use it to explain. To reduce repetition in the explanation, I will mainly explain the wireless transmission and reception of the 900A wireless transceiver. I will now explain the differences from the Model 900.

[0160] The wireless transceiver 900A has multiple antennas 931 to support the 5G communication standard. It also includes multiple shared units 921, multiple low-noise amplifiers 901, and multiple power amplifiers. It has a module 911. Also, the wireless transceiver 900A has a decoder circuit 906 (DEC) and It has a decoder circuit 916.

[0161] Figure 13 shows the antenna 931, the common unit 921, the low-noise amplifier 901, and the power amplifier. This shows the case where there are five of each of the antennas 911. Figure 13 shows the first antenna 93 Antenna 1 is denoted as antenna 931[1], and the fifth antenna 931 is denoted as antenna 931[5]. It does. The common unit 921, low-noise amplifier 901, and power amplifier 911 also use antennas. It is written the same way as Na931. Note that antenna 931, shared unit 921, low-noise amplifier 90 1. The number of power amplifiers 911 is not limited to five each.

[0162] Antenna 931[1] is electrically connected to the common unit 921[1]. Common unit 921[ [1] is electrically connected to the low-noise amplifier 901[1] and the power amplifier 911[1]. The antenna 931[5] is electrically connected to the common unit 921[5]. 1[5] is electrically connected to the low-noise amplifier 901[5] and the power amplifier 911[5]. The second to fourth antennas 931 are also the same as antenna 931[1]. It is electrically connected to the eye sharer 921. Also, the second to fourth sharers 921 are connected to the sharer. Similar to 921[1], the second to fourth low-noise amplifiers 901 and the second to fourth power amplifiers It is electrically connected to amplifier 911.

[0163] The decoder circuit 906 is electrically connected to multiple low-noise amplifiers 901. (Figure 13) The decoder has five low-noise amplifiers 901 connected to the decoder circuit 906. Circuit 916 is electrically connected to multiple power amplifiers 911. In Figure 13, five power amplifiers are connected. The power amplifier 911 is connected to the decoder circuit 916.

[0164] Decoder circuit 906 is connected to low-noise amplifier 901[1] or low-noise amplifier 901[5] It has the function to select one or more of the following. In addition, the decoder circuit 906 has a low noise It has a function to sequentially select an isoamp 901[1] to a low-noise amplifier 901[5]. Similarly, the decoder circuit 916 connects to power amplifier 911[1] to power amplifier 911[5] It has the function to select one or more of the following: ]. In addition, the decoder circuit 916 has the function to select one or more of the following: It has a function to sequentially select a warp amplifier 911[1] to a power amplifier 911[5].

[0165] For example, it can be incorporated into wearable electronic devices such as head-mounted displays. In the case of display devices, they should be small, lightweight, have high-speed communication capabilities, or be able to display high-definition images. This is required. Also, if the environment or location in which the head-mounted display is used changes... However, it is necessary to provide stable, high-speed communication. In the case of a device, the challenge is that the amount of image data required for the display device to display high-definition images increases. There is.

[0166] Therefore, below the L2 layer, which has a display area of ​​any shape, the source driver and the like are included. By bonding layers L1 together, it is possible to provide display devices and other devices of various shapes. The display device 10 is a display device with a novel configuration having antennas corresponding to multiple frequency bands. It can provide the following. Alternatively, the display device 10 has an antenna, so productivity A good display device can be provided. As mentioned above, the display device has pixels, games Because it includes a source driver, source driver, and antenna as components, it is used in electronic devices. The number of parts used can be reduced.

[0167] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0168] (Embodiment 3) In this embodiment, the transistor configuration applicable to the display device described in the above embodiment is The components will be explained. Figures 14A and 14B show the transistor 500 that the display device has. This figure shows an example configuration. Figure 14A is a schematic cross-sectional view of transistor 500 in the channel length direction. Figure 14B is a schematic cross-sectional view of transistor 500 in the channel width direction.

[0169] Note that the transistor 500 is just one example, and the circuit configuration and driving method are not limited to it. You should use the appropriate transistor depending on the situation. For example, a semiconductor device can use an OS transistor. Unipolar circuits (using only n-channel transistors, etc., meaning transistors of the same polarity) If this is the case, it can be applied to pixels, gate drivers, source drivers, memory, etc. can.

[0170] As shown in Figures 14A and 14B, transistor 500 is connected to insulator 514 and insulator A conductor 503 is arranged to be embedded in the edge 516, and the insulator 516 and the conductor An insulator 520 placed on top of 503, and an insulator 522 placed on top of insulator 520 , an insulator 524 placed on top of the insulator 522, and an oxide placed on top of the insulator 524. 530a, oxide 530b placed on oxide 530a, and on oxide 530b Conductors 542a and 542b are arranged at a distance from each other, and conductor 542a and conductor It is placed on the conductive body 542b and superimposed between the conductive body 542a and the conductive body 542b to form an opening. The insulator 580, the insulator 545 positioned on the bottom and sides of the opening, and the insulator 54 It has a conductor 560 arranged on the forming surface of 5.

[0171] Furthermore, as shown in Figures 14A and 14B, oxide 530a, oxide 530b, and conductive An insulator 544 is placed between the body 542a, the conductor 542b, and the insulator 580. This is preferable. Also, as shown in Figures 14A and 14B, the conductor 560 is an insulator 5 A conductor 560a is provided inside 45, and is embedded inside the conductor 560a It is preferable to have a conductor 560b provided. Also, Figures 14A and 14B As shown, an insulator 574 is placed on top of an insulator 580, a conductor 560, and an insulator 545. It is preferable that they be arranged in this manner.

[0172] In this specification, oxides 530a and 530b are collectively referred to as oxidation. There are cases where the item is listed as 530.

[0173] Furthermore, in transistor 500, in the region where the channel is formed and in its vicinity, acid The present invention describes a configuration in which two layers, oxide 530a and oxide 530b, are stacked, but The possibilities are not limited to this. For example, a single layer of oxide 530b, or a layer of three or more layers. A layered configuration may also be used.

[0174] Furthermore, in transistor 500, the conductor 560 is shown as a two-layer stacked structure, The present invention is not limited thereto. For example, the conductor 560 may have a single-layer configuration. Furthermore, a laminated structure of three or more layers is also acceptable.

[0175] Here, conductor 560 functions as the gate electrode of the transistor, and conductor 542a The conductor 542b functions as either a source electrode or a drain electrode, respectively. Thus, the conductor 560 is located at the opening of the insulator 580, and the conductors 542a and 542b It is formed to be embedded in the region sandwiched between the conductor 560, conductor 542a and The arrangement of the conductor 542b is self-aligned with the opening of the insulator 580. In transistor 500, the gate electrode is placed between the source electrode and the drain electrode. They can be arranged in a self-aligned manner. Therefore, a margin for alignment is provided for the conductor 560. Since it can be formed without any modifications, the occupied area of ​​transistor 500 can be reduced. This makes it possible to miniaturize and highly integrate semiconductor devices.

[0176] Furthermore, the conductor 560 is self-aligned in the region between conductor 542a and conductor 542b. As a result, the conductor 560 is formed in a region that overlaps with the conductor 542a or the conductor 542b. It does not have. As a result, between conductor 560 and conductors 542a and conductor 542b The parasitic capacitance that is formed can be reduced. Therefore, the switching of transistor 500 This allows for improved speed and enhanced frequency response.

[0177] The conductor 560 may function as the first gate (also called the top gate) electrode. Furthermore, the conductor 503 functions as a second gate (also called a bottom gate) electrode. There are cases where this occurs. In that case, the voltage applied to conductor 503 is the same as the voltage applied to conductor 560. By changing them independently and without linking them, the threshold voltage of transistor 500 is controlled. This can be done. In particular, by applying a negative voltage to the conductor 503, the transistor 5 It becomes possible to increase the threshold voltage of 00 to greater than 0V and reduce the off-current. However, Therefore, applying a negative voltage to conductor 503 is better than not applying a negative voltage to conductor 560 The drain current can be reduced when the applied voltage is 0V.

[0178] The conductor 503 is positioned to overlap with the oxide 530 and the conductor 560. Therefore, when a voltage is applied to the conductor 560 and the conductor 503, the conductor 560 produces The electric field generated by the conductor 503 connects with the electric field generated by the conductor 503, and a chain reaction is formed in the oxide 530. It can cover the channel formation region.

[0179] In this specification, etc., a pair of gate electrodes (a first gate electrode and a second gate electrode) The electric field of ) electrically surrounds the transistor configuration that forms the channel formation region, This is called a rounded channel (S-channel) configuration. In this context, the surroundd channel (S-channel) configuration is, Conductors 542a and 542b, which function as a drain electrode and a conduit electrode, are in contact with each other. The sides and periphery of oxide 530 have the same conductivity type as the channel-forming region, i. It has the following characteristics. Also, the oxide 530 in contact with the conductors 542a and 542b Since the surface and surrounding area are in contact with the insulator 544, they become i-shaped, similar to the channel formation region. In this specification, Type i is to be treated the same as the high-purity genuine type described later. This is possible. Furthermore, the S-channel configuration disclosed in this specification, etc., is a Fin-type configuration and This differs from a planar configuration. By adopting an S-channel configuration, the short-channel effect is achieved. To increase resistance to short-channel effects, or in other words, to create transistors that are less susceptible to short-channel effects. It is possible.

[0180] Furthermore, the conductor 503a is formed in contact with the inner wall of the opening of the insulator 514 and the insulator 516. Furthermore, a conductive material 503b is formed on the inside. In transistor 500, The present invention describes a configuration in which an electric body 503a and a conductor 503b are stacked, but this is not the case. It is not limited to this. For example, the conductor 503 may have a single layer or a laminated structure of three or more layers. The configuration may also be such that the insulator 514 is made of aluminum oxide, hafny oxide, etc. It is preferable to use metal oxides such as um or tantalum oxide.

[0181] Here, the conductor 503a diffuses impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing (the above-mentioned impurities are less likely to permeate) It is difficult. Or, it inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material that has the function of (being impermeable to the above-mentioned oxygen). In this specification, the function of suppressing the diffusion of impurities or oxygen means the above-mentioned impurities, and This function suppresses the diffusion of any one or all of the above-mentioned oxygen molecules.

[0182] For example, the conductor 503a has the function of suppressing the diffusion of oxygen, This can suppress the oxidation of b, which reduces its conductivity.

[0183] Furthermore, if the conductor 503 also functions as wiring, the conductor 503b may be tungsten or copper. Alternatively, it is preferable to use a highly conductive material, such as one primarily composed of aluminum. In this embodiment, the conductor 503 is shown as a laminate of conductor 503a and conductor 503b. However, the conductor 503 may have a single-layer configuration.

[0184] Insulators 520, 522, and 524 serve as a second gate insulating film. To have the ability.

[0185] Here, the insulator 524 in contact with the oxide 530 is more abundant than the oxygen that satisfies the stoichiometric composition. It is preferable to use an insulator containing oxygen. This oxygen is released from the film by heating. It is easily released. In this specification, the oxygen released by heating is sometimes referred to as "excess oxygen." In other words, the insulator 524 has a region containing excess oxygen (also called the "excess oxygen region"). It is preferable that such an insulator containing excess oxygen is brought into contact with oxide 530. By providing this, oxygen deficiencies (V) in oxide 530 are eliminated. O :oxygen vacancy This reduces (also known as) and improves the reliability of transistor 500. If hydrogen enters the oxygen vacancy in compound 530, the defect (hereinafter referred to as V) O It is sometimes referred to as H. ) can function as a donor, and electrons, which are carriers, can be generated. Also, hydrogen One part may combine with oxygen that binds to metal atoms to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor rich in hydrogen tends to have a normally-on characteristic. Also, hydrogen in the oxide semiconductor is likely to move due to stresses such as heat and an electric field. Thus, if the oxide semiconductor contains a large amount of hydrogen, the reliability of the transistor may deteriorate. In one aspect of the present invention, VH in the oxide 530 is reduced as much as possible O and preferably made highly pure intrinsic or substantially highly pure intrinsic. In this way, in order to obtain an oxide semiconductor with sufficiently reduced VH, it is important to remove impurities such as moisture and hydrogen in the oxide semiconductor (also referred to as "dehydration" or "dehydrogenation treatment") and supply oxygen to the oxide semiconductor to compensate for oxygen deficiency (also referred to as "oxygen addition treatment"). Using an oxide semiconductor with sufficiently reduced impurities such as VH in the channel formation region of a transistor can impart stable electrical characteristics. As an insulator having an excess oxygen region, specifically, it is preferable to use an oxide material in which some oxygen desorbs upon heating. An oxide that desorbs oxygen upon heating is one in which the desorption amount of oxygen in terms of oxygen atoms is 1.0×10 O or more, preferably 1.0 ×10 or more, more preferably 2.0×10 or more, or 3.0×10 O or more, as determined by TDS (Thermal Desorption Spectroscopy) analysis. Using an oxide semiconductor with sufficiently reduced impurities such as VH in the channel formation region of a transistor can impart stable electrical characteristics.

[0186] As an insulator having an excess oxygen region, specifically, it is preferable to use an oxide material in which some oxygen desorbs upon heating. An oxide that desorbs oxygen upon heating is one in which the desorption amount of oxygen in terms of oxygen atoms is 1.0×10 or more, preferably 1.0 ×10 18 atoms / cm 3 or more, preferably 1.0 ×10 19 atoms / cm 3 or more, more preferably 2.0×10 19 atoms / c m 3 or more, or 3.0×10 20 atoms / cm3 The above describes the oxide film. The surface temperature of the film during the above TDS analysis is 100°C to 700°C, or 1 A temperature range of 00°C to 400°C is preferred.

[0187] Furthermore, the insulator having the above excess oxygen region and oxide 530 are brought into contact and heat treated, One or more of the following processes may be performed: Kuroh wave processing or RF processing. By doing so, water or hydrogen can be removed from oxide 530. For example, oxide At 530, a reaction occurs in which the VoH bond is broken, or in other words, "V O H→Vo+ The reaction H occurs, which can lead to dehydrogenation. Some of the hydrogen produced at this time is It combines with oxygen to form H2O and is removed from oxide 530 or the insulator near oxide 530. In some cases, this may occur. Also, some of the hydrogen is transferred to conductors 542a and 542b. It may be linked.

[0188] Furthermore, the above microwave processing is performed using, for example, an apparatus having a power supply that generates high-density plasma. Alternatively, it is preferable to use a device that has a power supply that applies RF to the substrate side. For example, acid By using a gas containing elements and employing a high-density plasma, high-density oxygen radicals are generated. This can be achieved by applying RF to the substrate side, generating high-density plasma. Efficiently introduce oxygen radicals into oxide 530 or an insulator near oxide 530. This can be done. Furthermore, the above microwave treatment is performed at a pressure of 133 Pa or higher, preferably 200 Pa. The Pa should be Pa or higher, more preferably 400 Pa or higher. For example, oxygen and argon are used as gases introduced into the apparatus, with an oxygen flow rate ratio (O2 The process should be carried out with (O2+Ar) content of 50% or less, preferably between 10% and 30%.

[0189] Furthermore, during the manufacturing process of transistor 500, the surface of oxide 530 is exposed. Therefore, heat treatment is preferable. This heat treatment is, for example, 100°C to 450°C. More preferably, the heating should be carried out at a temperature of 350°C to 400°C. The heat treatment is performed using nitrogen gas. Alternatively, an inert gas atmosphere, or an oxidizing gas at 10 ppm or more, 1% or more, The procedure should be carried out in an atmosphere containing 10% or more of the substance. For example, heat treatment is preferably carried out in an oxygen atmosphere. This supplies oxygen to oxide 530, thus eliminating oxygen deficiency (V O This can help reduce ) Furthermore, the heat treatment may be carried out under reduced pressure. Alternatively, the heat treatment may be carried out under nitrogen gas or After heat treatment in an active gas atmosphere, an oxidizing gas is added at 10 pJ to replenish the desorbed oxygen. The procedure may be carried out in an atmosphere containing 1% or more of the substance, or 10% or more of the substance. Alternatively, an oxidizing gas may be used. After heat treatment in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more, then continuously The heat treatment may be carried out in a nitrogen gas or inert gas atmosphere.

[0190] Furthermore, by performing an oxygenation treatment on oxide 530, the oxygen deficiencies in oxide 530 are supplied. The oxygen used for repair, or in other words, the reaction "Vo + O → null" is promoted. Furthermore, the oxygen supplied reacts with the hydrogen remaining in oxide 530. This allows the hydrogen to be removed as H2O (dehydrated). This eliminates oxidation. The hydrogen remaining in substance 530 recombines with the oxygen vacancy and V O Suppresses the formation of H It is possible.

[0191] Furthermore, if the insulator 524 has an excess oxygen region, the insulator 522 will have oxygen (for example, It has the function of suppressing the diffusion of oxygen atoms, oxygen molecules, etc. (making it difficult for the above-mentioned oxygen to permeate). This is preferable.

[0192] The insulator 522 has the function of suppressing the diffusion of oxygen and impurities, so the oxide 530 The oxygen present does not diffuse towards the insulator 520, which is preferable. Also, the conductor 503 This suppresses the reaction between the insulator 524 and the oxygen present in the oxide 530.

[0193] The insulator 522 is, for example, aluminum oxide, hafnium oxide, aluminum and Humium-containing oxides (hafnium aluminate), tantalum oxide, zirconium oxide, Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or ( A single layer of insulator containing so-called high-k materials such as Ba,Sr)TiO3(BST) Alternatively, it is preferable to use them in a stacked configuration. As transistors become smaller and more integrated, Thinning the gate insulating film can sometimes lead to problems such as leakage current. By using a high-k material as an insulator that functions in this way, the physical film thickness is maintained while transforming This allows for a reduction in the gate voltage during DISTRO operation.

[0194] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the above oxygen does not permeate easily). i) An insulator containing an oxide of either aluminum or hafnium, or both, which are insulating materials. It is recommended to use an insulator containing an oxide of either aluminum or hafnium, or both. aluminum oxide, hafnium oxide, and oxides containing aluminum and hafnium ( It is preferable to use materials such as hafnium aluminate. When 522 is formed, the insulator 522 prevents the release of oxygen from the oxide 530 and the transient It functions as a layer that suppresses the incorporation of impurities such as hydrogen from the peripheral area of ​​T500 into the oxide 530. ru.

[0195] Alternatively, these insulators may be, for example, aluminum oxide, bismuth oxide, germanium oxide. Umium, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added. Alternatively, these insulators may be subjected to nitriding treatment. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated as the insulator. .

[0196] Furthermore, it is preferable that the insulator 520 is thermally stable. For example, silicon oxide Silicon oxide nitride is preferred because it is thermally stable. Also, high-k material By combining the insulator with silicon oxide or silicon oxide nitride, thermal stability can be achieved. This makes it possible to obtain an insulator 520 with a multilayer structure that has a high relative permittivity.

[0197] Note that the transistor 500 in Figures 14A and 14B has a three-layer stacked structure. Insulators 520, 522, and 524 are shown as gate insulating films of the 2. However, the second gate insulating film has a single-layer, two-layer, or four-layer or more stacked structure. In that case, the laminated structure is not limited to one made of the same material, but can also be made of different materials. "Natural" is also acceptable.

[0198] Transistor 500 is an oxide semiconductor in oxide 530 including a channel formation region. A functional metal oxide is used. The oxide semiconductor is made of at least one of In or Zn. It is preferable that it contains. For example, as oxide 530, In-M-Zn oxide (element M stands for aluminum, gallium, yttrium, copper, vanadium, beryllium, boron. Titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium Selected from neodymium, hafnium, tantalum, tungsten, or magnesium, etc. It is preferable to use one or more types of metal oxides.

[0199] The formation of metal oxides that function as oxide semiconductors may be carried out by sputtering. Alternatively, the Atomic Layer Deposition (ALD) method may be used. The metal oxides that function as oxide semiconductors will be described in detail in other embodiments. do.

[0200] Furthermore, the metal oxide that functions as a channel-forming region in oxide 530 is band It is preferable to use a gap of 2 eV or more, preferably 2.5 eV or more. As shown above, by using metal oxides with a large band gap, the off-current of the transistor can be reduced. It can be reduced.

[0201] Oxide 530 has oxide 530a beneath oxide 530b, so oxide 530a The diffusion of impurities from the components formed below to oxide 530b is suppressed. can.

[0202] Furthermore, oxide 530 has a layered structure of multiple oxide layers with different atomic ratios of each metal atom. It is preferable to do so. Specifically, in the metal oxide used in oxide 530a, the constituent elements The atomic ratio of element M in the elementary oxide is the ratio of constituent elements in the metal oxide used in oxide 530b. It is preferable that it is greater than the atomic ratio of element M. Also, the metal oxide used in oxide 530a In the material, the atomic ratio of element M to In is the same as that of the metal oxide used in oxide 530b. It is preferable that the atomic ratio of element M to In is greater than that of In. Also, oxide 530b In the metal oxide used, the atomic ratio of In to element M is used in oxide 530a. It is preferable that the atomic ratio of In to element M in the metal oxide is greater than that of In.

[0203] Furthermore, the energy at the lower end of the conduction band of oxide 530a is equal to the energy at the lower end of the conduction band of oxide 530b. It is preferable that it be higher than the energy. In other words, the electron affinity of oxide 530a. However, it is preferable that it be smaller than the electron affinity of oxide 530b.

[0204] Here, at the junction of oxide 530a and oxide 530b, the energy at the lower end of the conduction band The Ghee level changes smoothly. In other words, the junction of oxide 530a and oxide 530b The energy levels at the lower end of the conduction band at the junction are said to change continuously or form a continuous junction. This can be done. In order to do this, at the interface between oxide 530a and oxide 530b It is desirable to lower the defect level density of the mixed layer that is formed.

[0205] Specifically, oxides 530a and 530b have a common element other than oxygen (main By using it as a component, a mixed layer with a low defect level density can be formed. For example, oxidation If substance 530b is an In-Ga-Zn oxide, then oxide 530a is In-Ga-Zn Oxides, Ga-Zn oxide, and gallium oxide are good choices to use.

[0206] In this case, the main carrier pathway is oxide 530b. Oxide 530a is constructed as described above. By doing so, the defect level density at the interface between oxide 530a and oxide 530b is reduced. This makes it possible. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and traction The 500 inverter can achieve high on-current.

[0207] On the oxide 530b are conductors 542, which function as source and drain electrodes. a and conductor 542b are provided. It is aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum Tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium Nium, beryllium, indium, ruthenium, iridium, strontium, lanthanum A metal element selected from the above, or an alloy containing the above metal elements, or the above metal elements It is preferable to use an alloy that combines these elements. For example, tantalum nitride, titanium nitride, t sten, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum , ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum It is preferable to use oxides containing nitriding and nickel. Also, tantalum nitride, titanium nitride Titanium nitrides containing titanium and aluminum, tantalum nitrides containing tantalum and aluminum, oxides Thenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides containing Kel are conductive materials that are resistant to oxidation, or that maintain their conductivity even after absorbing oxygen. It is preferable because it is a material that does so. Furthermore, metal nitride films such as tantalum nitride are hydrogen or It is preferable because it has barrier properties against oxygen.

[0208] Furthermore, Figure 14A shows the conductors 542a and 542b as single-layer structures. However, a laminated structure of two or more layers is also possible. For example, a tantalum nitride film and a tungsten film can be laminated. This is a good idea. Alternatively, a titanium film and an aluminum film may be laminated. Also, a tungsten film may be used. A two-layer structure with an aluminum film laminated on top, and copper on a copper-magnesium-aluminum alloy film. Two-layer structure with stacked films, two-layer structure with a copper film stacked on a titanium film, copper film on a tungsten film A two-layer structure with stacked layers is also possible.

[0209] Furthermore, a titanium film or titanium nitride film, and a layer on top of the titanium film or titanium nitride film. A luminium film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure consisting of a molybdenum film or molybdenum nitride film, and the molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the butene film, and then a molybdenum film is laid on top of that. Alternatively, there are three-layer structures that form a molybdenum nitride film. Furthermore, indium oxide, tin oxide, and A transparent conductive material containing zinc oxide may also be used.

[0210] Furthermore, as shown in Figure 14A, the oxide 530 has conductor 542a (conductor 542b) and At the interface and its vicinity, regions 543a and 543b are formed as low-resistance regions. In some cases, this may occur. In this case, region 543a may be either the source region or the drain region. It functions, and region 543b functions as either the source region or the drain region. A channel-forming region is formed in the region sandwiched between region 543a and region 543b.

[0211] By providing the conductor 542a (conductor 542b) in contact with the oxide 530, The oxygen concentration in region 543a (region 543b) may decrease. Also, region 543a ( In region 543b), the metal contained in conductor 542a (conductor 542b) and oxide 530 A metal compound layer containing the component may be formed. In such cases, region 543a (region The carrier density in region 543b increases, and region 543a (region 543b) becomes a low-resistance region. Yes.

[0212] The insulator 544 is provided so as to cover the conductors 542a and 542b, and is conductive The oxidation of body 542a and conductor 542b is suppressed. At this time, the insulator 544 is oxidized. It may be provided so as to cover the side of object 530 and be in contact with the insulator 524.

[0213] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Umium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum Alternatively, a metal oxide containing one or more metals selected from magnesium, etc., may be used. It can be. Also, as insulator 544, silicon nitride or silicon nitride It can be used in any way.

[0214] In particular, as insulator 544, an oxide of either aluminum or hafnium or both Insulators containing materials, such as aluminum oxide, hafnium oxide, aluminum, and haf It is preferable to use an oxide containing nium (such as hafnium aluminate). In particular, Hafnium aluminate has higher heat resistance than hafnium oxide film. Therefore, in subsequent processes... In heat treatment, it is preferable because it does not easily crystallize. Note that conductor 542a and conductive Body 542b is a material that is oxidation-resistant, or whose conductivity does not significantly decrease even when it absorbs oxygen. In some cases, the insulator 544 is not an essential component. Depending on the desired transistor characteristics, it can be configured as appropriate. Just calculate it.

[0215] The presence of the insulator 544 allows water and other impurities such as hydrogen contained in the insulator 580 to be absorbed. Diffusion to oxide 530b via insulator 545 can be suppressed. The excess oxygen present in the insulator 580 can suppress the oxidation of the conductor 560. ru.

[0216] The insulator 545 functions as the first gate insulating film. The insulator 545 is the insulating film as described above. Similar to body 524, an insulator that contains excess oxygen and releases oxygen upon heating is used. It is preferable to form it.

[0217] Specifically, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon oxide containing excess oxygen silicon dioxide, silicon oxide with added fluorine, silicon oxide with added carbon, carbon, Silicon oxide with added nitrogen and porous silicon oxide can be used. Furthermore, silicon oxide and silicon oxide-nitride are preferred because they are stable to heat.

[0218] By providing an insulator containing excess oxygen as insulator 545, acid is released from insulator 545. It can effectively supply oxygen to the channel-forming region of compound 530b. Also, an insulator Similar to 524, the concentration of impurities such as water or hydrogen in the insulator 545 is reduced. Preferably, the film thickness of the insulator 545 is 1 nm or more and 20 nm or less.

[0219] Furthermore, in order to efficiently supply the excess oxygen contained in the insulator 545 to the oxide 530, A metal oxide may be provided between the edge 545 and the conductor 560. The metal oxide is an insulating material. It is preferable to suppress oxygen diffusion from body 545 to conductor 560. By providing a metal oxide, the diffusion of excess oxygen from the insulator 545 to the conductor 560 is suppressed. This means that the decrease in the amount of excess oxygen supplied to oxide 530 can be suppressed. Furthermore, oxidation of the conductor 560 due to excess oxygen can be suppressed. For the insulator 544, any material suitable for use in the insulator 544 may be used.

[0220] Furthermore, the insulator 545 may be in a laminated configuration, similar to the second gate insulating film. As DISTRS become smaller and more highly integrated, the gate insulating film becomes thinner, reducing leakage current. Because any of these problems may occur, the insulator that acts as the gate insulating film is high-k By creating a laminated structure of one material and a thermally stable material, the physical film thickness is maintained while... This allows for a reduction in gate voltage during transistor operation. Furthermore, it offers thermal stability and a high dielectric constant. A laminated structure can be formed.

[0221] The conductor 560, which functions as the first gate electrode, has a two-layer structure in Figures 14A and 14B. Although shown as a single-layer structure, it may also be a laminated structure of three or more layers.

[0222] Conductor 560a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. Conductive material (such as N2O, NO, NO2, etc.) has the function of suppressing the diffusion of impurities such as copper atoms. It is preferable to use a material with low oxygen content. Alternatively, a small amount of oxygen (for example, oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of (1). Conductor 5 Because 60a has the function of suppressing oxygen diffusion, the oxygen contained in the insulator 545 This suppresses the oxidation of the conductor 560b and the resulting decrease in conductivity. Examples of conductive materials that have the function of suppressing dispersion include tantalum, tantalum nitride, and luteinizing agent. It is preferable to use nium or ruthenium oxide. Also, the conductor 560a is used. Therefore, an oxide semiconductor applicable to oxide 530 can be used. In that case, conductor 5 By depositing 60b using the sputtering method, the electrical resistance of the conductor 560a is reduced. It can be made into a conductor. This is called an OC (Oxide Conductor) electrode. It is possible.

[0223] Furthermore, the conductive material 560b is a conductive material whose main components are tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductive material 560b also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material mainly composed of nium can be used. In addition, the conductive material 560b has a laminated structure. It may also be a laminated structure of titanium or titanium nitride and the above conductive material. good.

[0224] The insulator 580 is connected to the conductors 542a and 542b via the insulator 544. It is provided. The insulator 580 preferably has an excess oxygen region. For example, insulator 5 As 80, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, fluorine silicon oxide with added nitrogen, silicon oxide with added carbon, carbon, and nitrogen Preferably, it has silicon oxide, porous silicon oxide, or a resin. In particular, silicon oxide and silicon oxide-nitride are preferred because they are thermally stable. Silicon oxide, including porous silicon oxide, readily forms excess oxygen regions in subsequent processes. This is preferable because it allows for this.

[0225] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. By providing the insulator 580, oxygen in the insulator 580 is efficiently supplied to the oxide 530. This is possible. Furthermore, the concentration of impurities such as water or hydrogen in the insulator 580 is reduced. It is preferable to do so.

[0226] The opening in the insulator 580 is formed superimposed on the region between the conductor 542a and the conductor 542b. This allows the conductor 560 to communicate with the opening of the insulator 580 and the conductor 542a. It is formed so as to be embedded in the region sandwiched between body 542b.

[0227] When miniaturizing semiconductor devices, it is necessary to shorten the gate length, but the conductor 5 It is necessary to prevent the conductivity of 60 from decreasing. To that end, the film thickness of conductor 560 is increased. As a result, the conductor 560 can have a shape with a high aspect ratio. In this embodiment, In order to embed the body 560 into the opening of the insulator 580, the conductor 560 is aspect ratio Even when forming a shape with a high ratio, it is possible to form the conductive material 560 without causing it to collapse during the process. Cut.

[0228] The insulator 574 is located on the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 545. It is preferable that it be provided in contact with the surface. The insulator 574 is deposited by sputtering. This allows for the creation of excess oxygen regions in insulators 545 and 580. Therefore, oxygen can be supplied to the oxide 530 from the excess oxygen region.

[0229] For example, as insulator 574, hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium It is possible to use metal oxides containing one or more types of metals selected from nesium, etc. Cut.

[0230] In particular, aluminum oxide has high barrier properties and is suitable for thin films of 0.5 nm to 3.0 nm. However, the diffusion of hydrogen and nitrogen can be suppressed. Therefore, sputtering The aluminum oxide film formed by this method serves as an oxygen source and also acts as a barrier against impurities such as hydrogen. It can also function as a membrane.

[0231] Furthermore, it is preferable to provide an insulator 581 that functions as an interlayer film on top of the insulator 574. i. Insulator 581, like insulator 524, has an impurity concentration of water or hydrogen in the film. It is preferable that this is reduced.

[0232] Furthermore, the insulators 581, 574, 580, and 544 are formed Conductors 540a and 540b are placed in the opening. Body 540b is provided opposite the conductor 560, with the conductor in between.

[0233] In particular, aluminum oxide is a source of oxygen and water, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both elements and impurities such as water from passing through the membrane. Therefore, Aluminum oxide is affected by hydrogen, moisture, etc. during and after the transistor fabrication process. This prevents impurities from entering transistor 500. The release of oxygen from the oxides that make up 00 can be suppressed. Therefore, the transient It is suitable for use as a protective film for Ta500.

[0234] Furthermore, after the formation of the transistor 500, an opening is formed to surround the transistor 500. An insulator with high barrier properties against hydrogen or water may be formed to cover the opening. By encasing the transistor 500 in the aforementioned highly barrier-type insulator, moisture from the outside is prevented... And it can prevent hydrogen from entering. Or, multiple transistors 500 They may be encapsulated together in an insulator with high barrier properties against hydrogen or water. When forming an opening to surround the transistor 500, for example, an insulator 522 or an insulator An opening is formed that reaches 514, and the above-mentioned bar is made to contact the insulator 522 or the insulator 514. By forming a highly reflective insulator, it can also serve as part of the manufacturing process for transistor 500. Therefore, it is suitable. Furthermore, an insulator with high barrier properties against hydrogen or water is, for example, Alternatively, the same material as insulator 522 or insulator 514 may be used.

[0235] By using this configuration, semiconductor devices using transistors with oxide semiconductors This allows for miniaturization or high integration.

[0236] Substrates that can be used in a semiconductor device according to one aspect of the present invention include glass substrates and quartz substrates. Plates, sapphire substrates, ceramic substrates, metal substrates (e.g., stainless steel substrates, etc.) Substrates with stainless steel foil, tungsten substrates, and tungsten foil (such as substrates), semiconductor substrates (for example, single-crystal semiconductor substrates, polycrystalline semiconductor substrates, or chemical substrates) (e.g., composite semiconductor substrates), SOI (Silicon on Insulator) substrates, etc. A plastic can be used. In addition, a plastic with heat resistance that can withstand the processing temperature of this embodiment can be used. A plastic substrate may also be used. An example of a glass substrate is barium borosilicate glass. Aluminosilicate glass, or aluminoborosilicate glass, or soda-lime glass Examples include glass crystallized glass.

[0237] Alternatively, the substrate may be a flexible substrate, a laminated film, paper containing fibrous material, A base film can be used. Flexible substrate, laminated film, base film Examples of materials include the following: For example, polyethylene terephthalate. PET, polyethylene naphthalate (PEN), polyethersulfone (PES) ), there are plastics such as polytetrafluoroethylene (PTFE). One example is synthetic resins such as acrylic. Alternatively, another example is polypropylene. Examples include polyester, polyvinyl fluoride, or polyvinyl chloride. Examples include polyamide, polyimide, aramid resin, epoxy resin, and inorganic vapor-deposited film. These include, or paper products. In particular, semiconductor substrates, single crystal substrates, or SOI substrates are used. By manufacturing transistors in this way, variations in characteristics, size, or shape are minimized. This allows for the manufacture of transistors with high current capacity and small size. Using transistors to construct a circuit allows for lower power consumption or higher circuit integration. It is possible to measure this.

[0238] Furthermore, a flexible substrate is used as the base, and transistors, resistors, etc. are directly mounted on the flexible substrate. A rifling and / or capacitance may be formed. Alternatively, a substrate, a transistor, a resistor, and / Alternatively, a release layer may be provided between the capacitors, etc. The release layer is partially supported by the semiconductor device. After all the components are completed, they can be separated from the circuit board and used to transfer them to other circuit boards. In this case, transistors, resistors, and / or capacitors are placed on substrates with poor heat resistance or flexible substrates. It can also be mounted on the substrate. Furthermore, the aforementioned release layer may include, for example, a tungsten film and silica oxide. The structure involves a laminated configuration of an inorganic film with an organic film, or a structure in which an organic resin film such as polyimide is formed on a substrate. For example, a silicon film containing hydrogen can be used.

[0239] In other words, a semiconductor device is formed on one substrate, and then the semiconductor device is transferred to another substrate. This is also acceptable. An example of a substrate on which a semiconductor device is placed is the substrate on which the transistor described above is formed. In addition to substrates that can be used, paper substrates, cellophane substrates, aramid film substrates, and polyimide substrates are also available. Film substrates, stone substrates, wood substrates, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon) (Ron, polyurethane, polyester) or regenerated fibers (acetate, cupro, rayon) These include recycled polyester, leather substrates, or rubber substrates. By using a substrate, it is possible to manufacture flexible semiconductor devices and durable semiconductor devices. It can be constructed to provide heat resistance, reduce weight, or make the material thinner.

[0240] By mounting the semiconductor device on a flexible substrate, the increase in weight can be suppressed and damage can be minimized. We can provide a semiconductor device.

[0241] <Transistor Variation 1> The transistor 500A shown in Figures 15A, 15B, and 15C is the same transistor as in Figure 14A, Figure 1 Figure 15A shows a modified version of transistor 500 with the configuration shown in 4B. This is a top view. Figure 15B is a schematic cross-sectional view of the L1-L2 region shown by the dashed line in Figure 15A. Yes. Figure 15C is a schematic cross-sectional view of the W1-W2 region shown by the dashed line in Figure 15A. In the top view of Figure 15A, some elements have been omitted for clarity. The configuration shown in Figures 15A, 15B, and 15C is a semiconductor device according to one embodiment of the present invention. This can also be applied to other transistors.

[0242] The transistor 500A in the configuration shown in Figures 15A, 15B, and 15C is insulator 5 52, the insulator 513 and the insulator 404 are present in the configuration shown in Figures 14A and 14B. It is different from transistor 500. Also, an insulator 552 is provided in contact with the side surface of the conductor 540a. Furthermore, the insulator 552 is provided in contact with the side surface of the conductor 540b, as shown in Figures 14A and 14A. This differs from the transistor 500 with the configuration shown in B. Furthermore, it does not have an insulator 520, as shown in Figure This differs from transistor 500, which has the configuration shown in Figure 14A and Figure 14B.

[0243] The transistor 500A in the configuration shown in Figures 15A, 15B, and 15C is insulator 5 An insulator 513 is provided on 12. Also, an insulating layer is provided on the insulator 574 and on the insulator 513. A rim 404 is provided.

[0244] In transistor 500A with the configuration shown in Figures 15A, 15B, and 15C, the insulator 514, insulator 516, insulator 522, insulator 524, insulator 544, insulator 580, o The insulator 574 is patterned, and the insulator 404 covers them. In other words, insulator 404 is on the top surface of insulator 574, the side surface of insulator 574, and insulator 58 Side of 0, side of insulator 544, side of insulator 524, side of insulator 522, insulator 51 It is in contact with the side surface of 6, the side surface of insulator 514, and the top surface of insulator 513, respectively. This allows acid The monoxide 530, etc., is isolated from the outside by the insulators 404 and 513.

[0245] Insulators 513 and 404 contain hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that the insulator 51 has a high function of suppressing the diffusion of water molecules. 3 and insulator 404 are materials with high hydrogen barrier properties, such as silicon nitride or nitride It is preferable to use silicon oxide. This allows hydrogen and other elements to diffuse into the oxide 530. Since this can be suppressed, the degradation of the characteristics of the 500A transistor can be suppressed. This can improve the reliability of a semiconductor device according to one aspect of the present invention.

[0246] Insulator 552 is insulator 581, insulator 404, insulator 574, insulator 580, and It is provided in contact with the insulator 544. The insulator 552 suppresses the diffusion of hydrogen or water molecules. It is preferable that the material has a function. For example, the insulator 552 may be a material with high hydrogen barrier properties. Using an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide. Preferably, silicon nitride is a material with high hydrogen barrier properties, so insulator 55 It is preferable to use it as 2. Use a material with high hydrogen barrier properties as the insulator 552. As a result, impurities such as water or hydrogen are transferred from the insulator 580 to the conductor 540a and conductor 5 Diffusion to oxide 530 through 40b can be suppressed. Also, insulator 58 This suppresses the absorption of oxygen contained in 0 by conductors 540a and 540b. This makes it possible to improve the reliability of a semiconductor device according to one aspect of the present invention.

[0247] <Transistor Variation 2> Figures 16A, 16B, and 16C illustrate an example configuration of transistor 500B. Figure 16A is a top view of transistor 500B. Figure 16B is the same as Figure 16A but with a dashed line. This is a schematic cross-sectional view of the L1-L2 region shown in Figure 16A. Figure 16C shows the W1 region indicated by the dashed line in Figure 16A. -This is a schematic cross-sectional view of section W2. Note that in the top view of Figure 16A, some parts have been altered for clarity. The description of the elements has been omitted.

[0248] Transistor 500B is a modified version of transistor 500, and is a modified version of transistor 500. It is a replaceable transistor. Therefore, to avoid repeating the explanation, mainly the transistor This section explains the differences between the TA500B and the TA500 transistor.

[0249] The conductor 560, which functions as the first gate electrode, is composed of conductor 560a and conductor 56 It has a conductor 560b on 0a. The conductor 560a consists of hydrogen atoms, hydrogen molecules, water molecules, and copper. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as atoms. Alternatively, it may have a function that inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material.

[0250] The conductor 560a has the function of suppressing oxygen diffusion, thus affecting the material of conductor 560b. Selectivity can be improved. In other words, by having the conductor 560a, the conductor 560 The oxidation of b is suppressed, preventing a decrease in conductivity.

[0251] Furthermore, the insulator 54 covers the top and side surfaces of the conductor 560 and the side surfaces of the insulator 545. It is preferable to provide 4. Note that the insulator 544 is free from impurities such as water or hydrogen, and It is preferable to use an insulating material that has the function of suppressing oxygen diffusion. For example, aluminum oxide It is preferable to use magnesium oxide or hafnium oxide. In addition, for example, magnesium oxide is also preferable. Nesium, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, acid Metal oxides such as lanthanum oxide, neodymium oxide or tantalum oxide, silicon nitride or Silicon nitride and other materials can be used.

[0252] By providing the insulator 544, oxidation of the conductor 560 can be suppressed. The presence of the edge body 544 allows impurities such as water and hydrogen present in the insulator 580 to be transmitted. This can suppress diffusion to the ZISTA 500B.

[0253] Transistor 500B has conductor 56 in part of conductor 542a and part of conductor 542b. Because of the overlapping zeros, the parasitic capacitance tends to be larger than that of transistor 500. Therefore, Compared to the 500, the operating frequency tends to be lower. However, the insulator 580 Since there is no need to create openings in such parts and embed conductors 560 and insulators 545, It offers higher productivity compared to the Transistor 500.

[0254] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0255] (Embodiment 4) This embodiment describes an oxide semiconductor, which is a type of metal oxide.

[0256] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, It is preferable that it contains yttrium, tin, etc. Also, boron, silicon, titanium Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, Selected from odymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more types.

[0257] <Classification of crystal structures> First, we will explain the classification of crystal structures in oxide semiconductors using Figure 17A. Figure 17A shows an oxide semiconductor, typically IGZO (containing In, Ga, and Zn). This is a diagram illustrating the classification of the crystal structures of oxides.

[0258] As shown in Figure 17A, oxide semiconductors can be broadly classified into "Amorphous" )」 and 「Crystalline」 and 「Crystal」 and, It is classified. Also, within "Amorphous," there are completely amor It includes phous. Also, within "Crystalline" there is CAAC(ca xis-aligned crystalline), nc(nanocrystall This includes ine, and CAC (cloud-aligned composite). (excluding single crystal and poly crys tal). Note that the classification of "Crystalline" includes single crystal l, polycrystalline, and completely amorphous are excluded. It will be. Also, within "Crystal," there is single crystal, and p Contains oly crystal.

[0259] Note that the structures within the thick frame shown in Figure 17A are "Amorphous" and "Cr It is an intermediate state between "crystal" and a new boundary region (New crystal This structure belongs to the (linear phase). In other words, this structure is energetically It is completely different from the unstable "Amorphous" or "Crystal" forms. This can be rephrased as a structure.

[0260] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). It can be evaluated using the ion spectrum. Here, "Crystalline GIXD (Grazing-Incidence) of CAAC-IGZO film, which is classified as " Figure 17B shows the XRD spectrum obtained by XRD measurement (the vertical axis is the intensity (Intensity)). (sity) is expressed in arbitrary units (au). Note that the GIXD method is a thin-film method or Also known as the Seemann-Bohlin method. Subsequently, the results are obtained using the GIXD measurement shown in Figure 17B. The XRD spectrum shown in Figure 17B will simply be referred to as the XRD spectrum. The composition of the IGZO film is approximately In:Ga:Zn = 4:2:3 [atomic ratio]. The thickness of the CAAC-IGZO film shown in 17B is 500 nm.

[0261] As shown in Figure 17B, the XRD spectrum of the CAAC-IGZO film shows clear crystallinity. A peak indicating this is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film... A peak indicating c-axis orientation is detected near 2θ = 31°. As shown in Figure 17B... Furthermore, the peak near 2θ = 31° is asymmetrical with respect to the angle at which the peak intensity was detected. .

[0262] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely small) It can be evaluated by (also called electron diffraction pattern). The folding pattern is shown in Figure 17C. Figure 17C shows an NB with an electron beam incident parallel to the substrate. This is the diffraction pattern observed by ED. Note that the CAAC-IGZO shown in Figure 17C is also shown. The film composition is approximately In:Ga:Zn=4:2:3 [atomic ratio]. Furthermore, a microelectron beam was used. In diffraction, electron diffraction is performed with a probe diameter of 1 nm.

[0263] As shown in Figure 17C, the diffraction pattern of the CAAC-IGZO film shows a complex c-axis orientation. A number of spots are observed.

[0264] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those shown in Figure 17A when considering their crystal structure. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and non-single-crystal oxide semiconductors, for example, the aforementioned CAAC-OS , and nc-OS. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo Amorphous-like oxide semiconductor (a-like OS) This includes materials such as (e) semiconductors and amorphous oxide semiconductors.

[0265] Here, we will discuss the details of the CAAC-OS, nc-OS, and a-like OS mentioned above. Then, I will give an explanation.

[0266] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the c-axis of these crystalline regions is oriented in a specific direction. It is an oriented oxide semiconductor. The specific direction refers to the thickness direction of the CAAC-OS film. , in the direction normal to the surface on which the CAAC-OS film is formed, or in the direction normal to the surface of the CAAC-OS film Yes, there is. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. Note that the atomic arrangement is categorized If considered as a child arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC- OS has a region in which multiple crystal regions are connected in the ab-plane direction, and this region is strained It may have strain. Note that strain refers to the lattice arrangement in a region where multiple crystal regions are connected. The orientation of the grid arrangement changes between a region with aligned grids and another region with aligned grids. This refers to the location. In other words, CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0267] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10 It is composed of crystals smaller than nm. Furthermore, the maximum diameter of the crystalline region is less than 10 nm. If this occurs, the size of the crystalline region may be around several tens of nanometers.

[0268] Also, In-M-Zn oxide (element M is aluminum, gallium, yttrium, sulfite) In one or more types selected from materials such as titanium, CAAC-OS is an indicator. A layer containing um (In) and oxygen (hereinafter referred to as the In layer), and elements M, zinc (Zn), and A layered crystalline structure (layered structure and) is formed by stacking layers containing oxygen (hereinafter referred to as (M,Zn) layers) and oxygen. It tends to have (also known as) indium and element M are mutually substitutable. The (M,Zn) layer may contain indium. Also, the In layer contains element M. It may be included. Note that the In layer may also contain Zn. The layered structure is an example. For example, it is observed as a grid pattern in high-resolution TEM images.

[0269] For example, when structural analysis of a CAAC-OS film is performed using an XRD device, the θ / 2θ scale is obtained. Out-of-plane XRD measurements using the CANR showed two peaks indicating c-axis orientation. It is detected at θ=31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) ) may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0270] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) (T) is observed. Note that one spot and another spot are separated by the incident electron beam that has passed through the sample. With the spot (also called the direct spot) as the center of symmetry, observations are made at point-symmetric positions. It can be done.

[0271] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, The above distortion may have a grid arrangement such as a pentagon or heptagon. -In OS, clear grain boundaries were confirmed even near the strain. This is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This indicates that CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. This is because, for example, the substitution of metal atoms changes the bond distance between atoms. This is thought to be because it allows for distortion to be tolerated.

[0272] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as a polycrystalline structure. It is called al(al). The grain boundaries become recombination centers, trapping carriers and forming transistors. This is likely to cause a decrease in on-current and a decrease in field-effect mobility. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides that possesses Zn. Furthermore, CAAC-OS requires the presence of Zn. A configuration in which In-Zn oxide and In-Ga-Zn oxide are preferred. It is preferable because it can suppress the generation of grain boundaries more effectively than oxides.

[0273] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to impurities and the formation of defects. Because of this, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies) It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. C-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. It becomes possible to increase the risk.

[0274] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In other words, nc-OS is micro It has small crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, the entire film... No orientation is observed. Therefore, nc-OS is a-like depending on the analytical method. It can sometimes be indistinguishable from OS or amorphous oxide semiconductors. For example, compared to nc-OS films When performing structural analysis using an XRD device, out-of-pl using θ / 2θ scans is obtained. In ane XRD measurements, no peak indicating crystallinity was detected. Furthermore, for nc-OS films... Furthermore, electron beam blasts using electron beams with probe diameters larger than those of nanocrystals (e.g., 50 nm or more) When diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern similar to a halo pattern is obtained. Observed. On the other hand, compared to the nc-OS film, the size is close to or smaller than that of nanocrystals. Electron diffraction (nanobeam) using electron beams with probe diameters (e.g., 1 nm to 30 nm). Also called electron diffraction, when this is performed, a ring-shaped region centered on the direct spot appears. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0275] [a-like OS] a-like OS is an oxide having a structure between nc-OS and amorphous oxide semiconductors. It is a semiconductor. an a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. e OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0276] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding achievement.

[0277] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm. Below, preferably, a structure of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. It is formed. Furthermore, in the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A mixture of particles smaller than or near a m in size is also called a mosaic or patchy appearance. .

[0278] Furthermore, CAC-OS is a material that separates into a first region and a second region. This results in a zigzag-like structure, where the first region is distributed within the film (hereinafter also referred to as a cloud-like structure). ) In other words, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following composition.

[0279] Here, I for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of n, Ga, and Zn are given as [In], [Ga], and [Zn] respectively. To be expressed. For example, in CAC-OS in In-Ga-Zn oxide, the first region This is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. That is. Or, for example, in the first region, [In] is greater than [In] in the second region. It is also a region where the [Ga] is large, and [Ga] is smaller than the [Ga] in the second region. Furthermore, in the second region, [Ga] is greater than [Ga] in the first region, and [I n] is a region where n is smaller than [In] in the first region.

[0280] Specifically, the first region mentioned above mainly consists of indium oxide, indium zinc oxide, etc. This is a region of minutes. Furthermore, the second region mentioned above is gallium oxide, gallium zinc oxide, etc. This is the region in which In is the main component. In other words, the first region described above can be said to be the region in which In is the main component. It can be replaced. Furthermore, the second region described above can be rephrased as the region with Ga as the main component. It is possible.

[0281] Note that a clear boundary may not be observed between the first region and the second region described above. .

[0282] For example, in CAC-OS in In-Ga-Zn oxide, the energy-dispersive X-ray segment Optical method (EDX:Energy Dispersive X-ray spectrosc) EDX mapping obtained using opy revealed the region with In as its main component (the first region) It has a structure in which a region (the second region) and a region mainly composed of Ga are unevenly distributed and mixed. This can be confirmed.

[0283] When CAC-OS is used in a transistor, the conductivity is due to the first region and the second region The insulating properties due to the region work complementarily to enable the switching function (On The function to turn off CAC-OS can be added to it. In other words, CAC-OS and The material has both conductive and insulating properties in parts, and the entire material Then it has the function of a semiconductor. By separating the conductive function and the insulating function, This allows for the maximum enhancement of both functions. Therefore, CAC-OS is used in transistors. This results in a high on-current (I on ), high field-effect mobility (μ), and good switching This enables smooth operation.

[0284] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and C It may have two or more of the following: AC-OS, nc-OS, and CAAC-OS.

[0285] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0286] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility is obtained. This can be achieved. Furthermore, highly reliable transistors can be realized.

[0287] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 c m -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm - 3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, the oxide... The impurity concentration in the semiconductor film can be reduced to lower the defect level density. High-purity intrinsic or substantially high-purity intrinsic refers to a product with a low impurity concentration and a low defect level density. Furthermore, an oxide semiconductor with a low carrier concentration is subjected to high-purity intrinsic or substantially high-purity intrinsic acid. They are sometimes called monstrous semiconductors.

[0288] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0289] Furthermore, the time required for charges trapped in the trap levels of an oxide semiconductor to disappear is... It can behave for a long time, almost like a fixed charge. Therefore, the trap level density is high. Transistors in which a channel formation region is formed in an oxide semiconductor have unstable electrical properties. There are cases where this occurs.

[0290] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is Reducing it is effective. Furthermore, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the adjacent membrane. Examples of impurities include hydrogen, nitrogen, and Examples include potassium metals, alkaline earth metals, iron, nickel, and silicon.

[0291] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0292] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, oxidation occurs. Defect levels are formed in silicon semiconductors. Therefore, in oxide semiconductors, silicon and carbon The concentration of the element and the concentrations of silicon and carbon near the interface with the oxide semiconductor (secondary ion mass spectrometry) (SIMS: Secondary Ion Mass Spectrometry) The concentration obtained is 2 × 10 18 atoms / cm 3 The following is preferably 2 × 10 17 a toms / cm 3 The following applies:

[0293] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals may be present. Transistors using oxide semiconductors tend to exhibit normally-on characteristics. Therefore, the concentration of alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS Degrees, 1 x 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0294] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. As the nitrogen concentration increases, it becomes easier to convert to n-type semiconductors. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, oxide semiconductors Furthermore, when nitrogen is present, trap levels may be formed. As a result, transistor The electrical properties of the oxide semiconductor obtained by SIMS may become unstable. The nitrogen concentration inside is 5 × 10 19 atoms / cm 3 Less than 5 × 10 18 ato ms / cm 3 More preferably 1 × 10 18 atoms / cm 3 The following are even more preferable kuha 5×10 17 atoms / cm 3 Do the following:

[0295] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, an oxygen deficiency may form. When hydrogen enters this oxygen deficiency, the carrier electrons In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons that act as carriers. Therefore, an oxide semiconductor containing hydrogen is used. Transistors with this characteristic tend to exhibit normally-on properties. Therefore, hydrogen in oxide semiconductors It is preferable that the SI is reduced as much as possible. Specifically, in oxide semiconductors, The hydrogen concentration obtained by MS is 1 × 10 20 atoms / cm 3 Less than 1x 10 19 atoms / cm3 Less than 5x10 18 atoms / cm 3 less than More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0296] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor. This allows for the provision of stable electrical characteristics.

[0297] The configurations, structures, and methods shown in this embodiment are similar to those shown in other embodiments. It can be used in appropriate combinations with the above.

[0298] (Embodiment 5) In this embodiment, a display device having a free-form display area according to one aspect of the present invention can be applied. This explains the capabilities of head-mounted displays.

[0299] Applying a display device according to one aspect of the present invention to the display unit of a head-mounted display Yes, it is possible. Therefore, a head-mounted display with high display quality can be realized. Or This enables the creation of extremely high-definition head-mounted displays. Alternatively, a highly reliable head... Mounted displays can be realized.

[0300] Furthermore, the display device of the head-mounted display may also have an antenna. By receiving signals with the antenna, the display unit can display images, information, and other data.

[0301] Furthermore, the head-mounted display uses sensors (force, displacement, position, velocity, acceleration, angular velocity). Degrees, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, electric current, electricity Includes the ability to measure pressure, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation. It may have a sensor. The sensor is preferably a MEMS device.

[0302] Head-mounted displays can have a variety of functions. For example, various information Functions to display information (still images, videos, text images, etc.) on the display unit, touch panel function, Features such as rendering, displaying date or time, and various software (programs) are implemented. Functions that perform actions, wireless communication functions including 5G communication, and programs recorded on the recording medium. Alternatively, it may have a function to read data, etc.

[0303] Furthermore, in a head-mounted display having multiple display units, one display unit A function that primarily displays image information on one display unit and primarily displays text information on another display unit, Alternatively, it can display three-dimensional images by showing images that take parallax into account on multiple display units. It can have a head-mounted display having an image receiving unit. , functions to take still images or videos, functions to automatically or manually correct captured images, A function to save the captured image to a recording medium (external or built into the head-mounted display). The device may have a function to display the captured image on a display unit. (Note: This is one embodiment of the present invention.) The functions of a head-mounted display are not limited to these, and it has a variety of functions. It is possible.

[0304] A display device according to one aspect of the present invention can display extremely high-resolution images. Head-mounted displays are used in VR (Virtual Reality) and AR devices. It can be suitably used in applications such as Augmented Reality.

[0305] Figure 18A shows the external appearance of the head-mounted display 860.

[0306] The head-mounted display 860 consists of a mounting part 861, lenses 862, main body 863, and front It has an indicator part 864, a cable 865, etc. The mounting part 861 also has a battery 866. It is built-in.

[0307] Cable 865 supplies power from battery 866 to main unit 863. Main unit 863 is The device includes a line receiver and displays received video information such as image data on the display unit 864. Yes, it is possible. Furthermore, a camera located on the main unit 863 captures the user's eyeball and eyelid movements, and By calculating the coordinates of the user's gaze based on this information, the user's gaze is used as an input method. It can be used.

[0308] Furthermore, the attachment portion 861 may be provided with multiple electrodes in positions that come into contact with the user. The main unit 863 detects the current flowing through the electrodes in response to the user's eye movements, and then... It may also have a function to recognize the gaze of the person. Furthermore, it may detect the current flowing through the electrode. The device may also have a function to monitor the user's pulse. It may also have various sensors such as temperature sensors, pressure sensors, and acceleration sensors, and the user The system may also have a function to display biometric information on the display unit 864. Furthermore, it may also display the user's head movements. The system may detect such movements and change the image displayed on the display unit 864 to match those movements.

[0309] A display device according to one aspect of the present invention can be applied to the display unit 864.

[0310] Figures 18B and 18C show the external appearance of the head-mounted display 870.

[0311] The head-mounted display 870 consists of a housing 871, two display units 872, and control buttons. It has 873 and a band-shaped fastener 874.

[0312] The head-mounted display 870 has the same features as the head-mounted display 860 described above. In addition to its functions, it is equipped with two display units.

[0313] Having two display units 872 allows the user to view one display unit per eye. This allows for high-resolution display even when using parallax for 3D visualization. An image can be displayed. Furthermore, the display unit 872 is positioned in an arc shape roughly centered on the user's eyes. It is curved. This ensures that the distance from the user's eyes to the display surface of the display unit remains constant. This allows users to see more natural images. In addition, the brightness and color of the light from the display unit can be seen. Even in cases where it changes depending on the angle, the normal direction of the display surface of the display unit is used. Because the viewer's eyes are positioned there, their influence can be practically ignored, resulting in a more realistic view. It can display images.

[0314] Operation button 873 has functions such as a power button. In addition to operation button 873, there is a button They may have tonsils.

[0315] Furthermore, as shown in Figure 18D, a lens 87 is positioned between the display unit 872 and the user's eye position. It may have 5. The lens 875 allows the user to view the display unit 872 in magnification. This allows for a greater sense of realism. At this time, as shown in Figure 18D, diopter adjustment is necessary. It may also have a dial 876 for changing the position of the lens.

[0316] A display device according to one aspect of the present invention can be applied to the display unit 872. Because the display device has extremely high resolution, it is magnified using lens 875 as shown in Figure 18D. Even so, the goal is to display more realistic images without the user being able to see the individual pixels. It is possible.

[0317] Note that the display section 872 in Figures 18B to 18D is not limited to a shape enclosed by two opposing sides. It is not fixed. Depending on the size and structure of the enclosure, the shape of the display unit 872 can be selected from a variety of shapes. It is possible to have an elliptical shape, for example, as shown in Figure 18A. A display device that matches the shape of lens 862 may be provided.

[0318] Figures 19A and 19B show an example where there is one display unit 872. This configuration allows for a reduction in the number of parts.

[0319] The display unit 872 displays two images, one for the right eye and one for the left eye, in two separate areas. Images can be displayed side by side. This allows for the display of stereoscopic images using binocular parallax. It is possible.

[0320] Alternatively, a single image visible to both eyes may be displayed across the entire area of ​​the display unit 872. This makes it possible to display panoramic images across both edges of the field of view, The feeling of realism intensifies.

[0321] Furthermore, the aforementioned lens 875 may be provided. The display unit 872 displays two images side by side. Alternatively, one image may be displayed on the display unit 872 and viewed through the lens 875. It would also be acceptable to have a configuration that allows everyone to view the same image.

[0322] Furthermore, the display unit 872 does not have to be curved, and the display surface may be flat. Figures 19C and 19D show an example where there is a single display unit 872 that does not have a curved surface. It is.

[0323] The configurations, structures, and methods shown in this embodiment are similar to those shown in other embodiments. It can be used in appropriate combinations with the above.

[0324] (Embodiment 6) This embodiment describes an application example of a display device having a display area of ​​a free shape as described above. I will reveal it.

[0325] [Electronic equipment] Next, an electronic device equipped with a display device having a display area of ​​a free shape according to one aspect of the present invention. Let's explain an example.

[0326] As an electronic device using a display device having a display area of ​​any shape according to one aspect of the present invention Televisions, monitors and other display devices, lighting devices, desktop or notebook personal computers Computer, word processor, DVD (Digital Versatile Di Image playback device for playing still images or videos stored on recording media such as SC, portable CD player, radio, tape recorder, headphone stereo, stereo, desk clock, wall Wall clocks, cordless phone handsets, transceivers, mobile phones, car phones, portable game consoles , tablet devices, large game machines such as pachinko machines, calculators, portable electronic devices ("portable" Also called "electronic devices," ) electronic organizers, e-book readers, electronic translators, voice input devices, video Cameras, digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric Rice cooker, electric washing machine, electric vacuum cleaner, water heater, electric fan, hair dryer, air conditioner , humidifiers, dehumidifiers and other air conditioning equipment, dishwashers, dish dryers, clothes dryers, futon dryers, Electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, chainsaws Examples include tools such as smoke detectors and medical equipment such as dialysis machines. Furthermore, emergency lights, Traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems The control unit of industrial equipment such as energy storage devices for power leveling and smart grids is equipped with A display device is one example.

[0327] Furthermore, display devices having a display area of ​​any shape include head-mounted displays and smartphones. Watches, vital sign measurement devices, helmets, clothing, digital signage displays It can be incorporated into wearable electronic devices such as sprays.

[0328] Furthermore, display devices having a display area of ​​any shape can be installed on the interior or exterior walls of a house or building. It can be incorporated into walls or curved surfaces of the interior or exterior of automobiles.

[0329] Furthermore, mobile devices propelled by electric motors using electricity from energy storage devices also fall under the category of electronic equipment. It shall be included in the category. As the above-mentioned mobile devices, for example, electric vehicles (EVs), internal combustion engines and Hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs) that also incorporate electric motors. , tracked vehicles that replace these tire wheels with tracks, and motorized vehicles including electric assist bicycles Bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters Examples include drones, aircraft, rockets, satellites, space probes and planetary probes, and spacecraft. ru.

[0330] Furthermore, the display device of the electronic device described above preferably has an antenna. By receiving signals with the antenna, the display unit can display images, information, etc. Therefore, a display device according to one aspect of the present invention is a communication device built into these electronic devices, etc. It can be used for this purpose.

[0331] Furthermore, the display devices of the electronic devices mentioned above include sensors (force, displacement, position, velocity, acceleration). Degrees, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, A device that measures electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation. It may have features such as (including capabilities). Furthermore, the sensor is preferably a MEMS. stomach.

[0332] Electronic devices can have a variety of functions. For example, they can display various types of information (still images, videos, Features that display text, images, etc. on the display unit, touch panel functionality, calendar, date, and It has functions to display the time, execute various software (programs), and is compatible with 5G. Wireless communication functions, including communication via radio, and reading programs or data recorded on recording media. It can have functions such as outputting.

[0333] Figures 20A to 20F show an example of an electronic device. The following describes the table of the electronic device that is described below. The display device or display unit may be a display device according to one embodiment of the present invention.

[0334] Figure 20A shows an example of a wristwatch-type portable electronic device. The portable electronic device 6100 has a housing 6 It includes 101, a display unit 6102, a band 6103, and operation buttons 6105. The electronic device 6100 contains a secondary battery and a semiconductor device according to one aspect of the present invention or It includes electronic components. A semiconductor device or electronic components according to one aspect of the present invention are included in a portable electronic device 61 By using it in 00, the portable electronic device 6100 can be made to function as an IoT device. ru.

[0335] Figure 20B shows an example of a mobile phone. The mobile phone 6200 is housed in a casing 6201. In addition to the built-in display unit 6202, there are operation buttons 6203, a speaker 6204, and a microphone. It is equipped with the 6205, among other things.

[0336] Furthermore, the mobile phone 6200 is equipped with a fingerprint sensor 6209 in an area that overlaps with the display unit 6202. The fingerprint sensor 6209 may also be an organic light sensor. Fingerprints are different for each individual. Therefore, the fingerprint sensor 6209 can acquire the fingerprint pattern and perform personal authentication. As a light source for acquiring a fingerprint pattern with sensor 6209, the light emitted from display unit 6202 It can use dimly lit light.

[0337] Furthermore, the mobile phone 6200 has a secondary battery and a semiconductor device according to one aspect of the present invention inside it. A semiconductor device or electronic component according to one aspect of the present invention is provided in a mobile phone. By using it in device 6200, the mobile phone 6200 can be made to function as an IoT device. can.

[0338] Figure 20C shows an example of a cleaning robot. The cleaning robot 6300 has a housing 630 1 Display unit 6302 located on the top surface, multiple cameras 6303 located on the side, brush 6 It has 304, operation buttons 6305, various sensors, etc. Although not shown, a cleaning robot The 6300 is equipped with wheels, a suction port, etc. The 6300 cleaning robot is self It moves, detects dust 6310, and sucks up the dust from the suction port located on the bottom. Cut.

[0339] For example, the cleaning robot 6300 analyzes images captured by the camera 6303 to identify walls, furniture, etc. Alternatively, it can determine the presence or absence of obstacles such as steps. Furthermore, image analysis can determine wiring... If an object that may become entangled in brush 6304 is detected, the rotation of brush 6304 will be stopped. It is possible. The cleaning robot 6300 has a secondary battery inside and according to one aspect of the present invention. A semiconductor device or electronic component is provided. A semiconductor device or electronic component according to one aspect of the present invention By using it with the cleaning robot 6300, the cleaning robot 6300 can function as an IoT device. It can be made to happen.

[0340] Figure 20D shows an example of a robot. The robot 6400 shown in Figure 20D is a calculation robot. Device 6409, illuminance sensor 6401, microphone 6402, upper camera 6403, S Peeker 6404, display unit 6405, lower camera 6406 and obstacle sensor 6407, It is equipped with a drive mechanism 6408.

[0341] Microphone 6402 has the function of detecting the user's voice and ambient sounds. Additionally, speaker 6404 has the function of emitting sound. Robot 6400 is micro Using phone 6402 and speaker 6404, communication with the user is performed. This is possible.

[0342] The display unit 6405 has the function of displaying various information. The robot 6400 is used It is possible to display the information desired by the user on the display unit 6405. The display unit 6405 is a touch A control panel may be installed. Also, the display unit 6405 is a removable electronic device. It's also fine to install it in a fixed position on the robot 6400 for charging and data transfer. This makes it possible.

[0343] The upper camera 6403 and the lower camera 6406 image the area around the robot 6400. It has the function of. In addition, the obstacle sensor 6407 uses the moving mechanism 6408 to move the robot 64 Robot 6 can detect the presence or absence of obstacles in the direction of travel as 00 moves forward. The 400 uses an upper camera 6403, a lower camera 6406, and an obstacle sensor 6407. This allows the device to recognize its surroundings and move safely. A light-emitting device according to one aspect of the present invention. This can be used in the display unit 6405.

[0344] The robot 6400 contains a secondary battery and a semiconductor device according to one aspect of the present invention or It comprises electronic components. A semiconductor device or electronic components according to one aspect of the present invention are provided to robot 6400. By using this, the Robot 6400 can be made to function as an IoT device.

[0345] Figure 20E shows an example of an aircraft. The aircraft 6500 shown in Figure 20E has a propeller. It has components such as the 6501, camera 6502, and battery 6503, and is capable of autonomous flight. It holds.

[0346] For example, image data captured by camera 6502 is stored in electronic component 6504. Sub-component 6504 analyzes image data to detect the presence or absence of obstacles during movement. This is possible. Also, the electronic component 6504 can detect changes in the storage capacity of the battery 6503, The remaining amount of fuel can be estimated. The aircraft 6500 has inside it one aspect of the present invention A semiconductor device or electronic component comprising a semiconductor device or electronic component according to one aspect of the present invention. By using this in the aircraft 6500, the aircraft 6500 can function as an IoT device. It is possible.

[0347] Figure 20F shows an example of an automobile. Automobile 7160 has an engine, tires, and brakes. It has a key, steering system, camera, etc. Automobile 7160 has inside one aspect of the present invention The present invention comprises a semiconductor device or electronic component. By using this product in the automobile 7160, the automobile 7160 can function as an IoT device. It is possible.

[0348] The configurations, structures, and methods shown in this embodiment are similar to those shown in other embodiments. It can be used in appropriate combinations with the above. [Explanation of symbols]

[0349] :ANT1: Antenna area, ANT2: Antenna area, C1: Capacitance, C2: Capacitance, CK1 : Input terminal, CK2: Input terminal, d1: Distance, d2: Distance, L1: Layer, L1A: Layer, L1 B: Layer, L2: Layer, L2A: Layer, L2B: Layer, ND2: Node, ND3: Node, Pix 1: Pixel, Pix2: Pixel, Sen1: Sensor, Sen2: Sensor, 10: Display device, 1 0A: Display device, 10B: Display device, 10C: Display device, 20: Sensor, 20A: Source Driver, 20A1: Output terminal, 20B: Source driver, 20B1: Output terminal, 20C : Sensor, 20C1: Sensor, 20C2: Sensor, 20D: Transmitter / Receiver, 20D1: Transmitter / Receiver Signaling device, 20D2: Transmitter / receiver, 30: Timing controller, 30a: Output terminal, 4 0: Pixel, 40A: Pixel, 40B: Pixel, 40D: Circuit, 40D1: Circuit, 40D2: Time Path, 41: light-emitting element, 42: transistor, 42a: transistor, 43: transistor , 44: Transistor, 45: Wiring, 45b: Wiring, 46: Wiring, 48: Wiring, 48a: Wiring, 48g: Wiring, 49: Wiring, 49a: Wiring, 49b: Wiring, 51a: Electrode, 51b : electrode, 51c: electrode, 55a: plug, 55b: plug, 55c: plug, 55d: plug 55e: Plug, 57a: Plug, 57b: Plug, 57c: Plug, 58: Space , 59: bump, 59a: bump, 59b: bump, 59c: bump, 61a: electrode, 6 1b: electrode, 61c: electrode, 61d: electrode, 61e: electrode, 63a: plug, 63b: plug Lug, 63c: Plug, 72: Insulating layer, 74: Insulating layer, 76: Insulating film, 78: Insulating film, 8 1: Transistor, 82: Transistor, 83: Transistor, 84: Transistor, 8 5: Transistor, 86: Transistor, 87: Transistor, 88: Transistor, 8 9: Transistor, 90: Transistor, 91: Transistor, 94: Capacitor, 95: Capacitor 96: Capacity, 100: Electronic equipment, 100A: Circuit board, 100B: FPC, 100C: Control Device, 101A: Bump, 101B: Bump, 110: Display area, 404: Insulator, 50 0: Transistor, 500A: Transistor, 500B: Transistor, 503: Conductor 503a: Conductor, 503b: Conductor, 512: Insulator, 513: Insulator, 514: Insulator Edge material, 516: insulator, 520: insulator, 522: insulator, 524: insulator, 530: acid Oxide, 530a: Oxide, 530b: Oxide, 540a: Conductor, 540b: Conductor, 5 42: Conductor, 542a: Conductor, 542b: Conductor, 543a: Area, 543b: Area , 544: insulator, 545: insulator, 550: transistor, 552: insulator, 560: Conductor, 560a: Conductor, 560b: Conductor, 574: Insulator, 580: Insulator, 58 1: Insulator, 860: Head-mounted display, 861: Mounting part, 862: Lens, 863: Main unit, 864: Display unit, 865: Cable, 866: Battery, 870: Head Mounted display, 871: housing, 872: display unit, 873: operation buttons, 874: Fixing device, 875: Lens, 876: Dial, 900: Wireless transceiver, 900A: Wireless transmitter Receiver, 901: Low-noise amplifier, 902: Bandpass filter, 903: Mixer, 90 4: Bandpass filter, 905: Demodulator, 906: Decoder circuit, 911: Power amplifier P, 912: Bandpass filter, 913: Mixer, 914: Bandpass filter, 91 5: Modulator, 916: Decoder circuit, 921: Commonizer, 922: Local oscillator, 931: A Nentena, 941: signal, 942: signal, 943: signal, 944: signal, 6100: mobile phone Sub-device, 6101: housing, 6102: display unit, 6103: band, 6105: operation buttons 6200: Mobile phone, 6201: Casing, 6202: Display unit, 6203: Operation buttons, 6204: Speaker, 6205: Microphone, 6209: Fingerprint sensor, 6300: Sweep Robot removal, 6301: housing, 6302: display unit, 6303: camera, 6304: brush 6305: Operation button, 6310: Trash, 6400: Robot, 6401: Illuminance sensor , 6402: Microphone, 6403: Top camera, 6404: Speaker, 6405: Display unit, 6406: Lower camera, 6407: Obstacle sensor, 6408: Moving mechanism, 640 9: Computing unit, 6500: Aircraft, 6501: Propeller, 6502: Camera, 6503: Battery, 6504: Electronic components, 7160: Automobile

Claims

[Claim 1] A display device having a first layer and a second layer, The first layer has a source driver, The second layer comprises a gate driver, a plurality of pixels, and an antenna. Either the gate driver or the plurality of pixels, or both, are formed in a region overlapping with the antenna. The first layer has a first terminal and a third terminal, The first terminal is electrically connected to the source driver, The first surface of the second layer is provided with the pixels, A second terminal is provided on the second surface opposite to the first surface. The second terminal is electrically connected to the pixel, The first terminal is electrically connected to the second terminal, The third terminal is a display device that is electrically connected to the end of the antenna.

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