Indication device

Abstract

To provide a highly reliable display device. [Solution] A flexible display having at least a first display area and a second display area. In a display device, at least a portion of the wiring provided in the first display area or the second display area The wiring shall be meander-shaped or chain-shaped. By making the wiring meander-shaped or chain-shaped, the display device This reduces the likelihood of short circuits or disconnections in the wiring due to curvature or bending of the wires. Alternatively, by making it in a chain shape, malfunctions and reduced reliability of the display device can be prevented.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a product In processes, machines, manufactures, or compositions of matter This relates to semiconductor devices, display devices, light-emitting devices, lighting devices, and energy storage devices. The present invention relates to a device, a storage device, a processor, a method for driving them, or a method for manufacturing them.

[0002] In this specification, a semiconductor device is defined as a device that can function by utilizing semiconductor properties. This refers to semiconductor devices in general, such as diodes, transistors, and semiconductor circuits. These can be called semiconductor devices. Display devices, light-emitting devices, lighting devices, photoelectric converters, memory devices, cameras Imaging devices and electronic equipment may have semiconductor devices. [Background technology]

[0003] In recent years, portable electronic devices such as smartphones and tablet devices have become widespread. In Document 1, a flexible display device (flexible display) is bent to form multiple surfaces An electronic device equipped with a display unit is shown.

[0004] Furthermore, as a display device, each pixel has a transistor for driving the display element. A type of display device called a liquid crystal display is known. For example, one using liquid crystal elements as the display element. Active-matrix liquid crystal display devices, and light-emitting elements such as organic EL elements as display elements. Active matrix type light-emitting display devices using these are known. Compared to simple matrix displays, matrix displays offer larger screens and higher resolution. It is easy to miniaturize, which is advantageous in terms of reducing power consumption, etc. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Special Publication No. 2014-535086 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] In recent years, there has been a demand for miniaturization of portable electronic devices. For example, as shown in Patent Document 1. To achieve miniaturization of electronic devices, the radius of curvature of the bent portion of a flexible display must be reduced. It is necessary to do so. However, in the electronic device shown in Patent Document 1, the flexible d Because display elements and wiring are located in the curved portion of the display, the radius of curvature of the curved portion is Making it smaller can lead to malfunctions caused by short circuits or breaks in the wiring and electrodes located in the bent sections. However, this can lead to problems such as a decrease in reliability.

[0007] Furthermore, portable electronic devices are required to reduce power consumption. In particular, mobile phones and smartphones... Smartphones, tablet devices, smartwatches, notebook personal computers, etc. In devices that use batteries as a power source, the proportion of the power consumption of the display device to the total power consumption is... Due to the large size of the display devices, there is a need for lower power consumption.

[0008] Furthermore, portable electronic devices are used in environments with high ambient light and environments with low ambient light. High visibility is required in both cases.

[0009] Also, portable electronic devices can be damaged if they are dropped or placed in a pants pocket, etc. Sometimes, the display device may crack. Therefore, as a display device provided in an electronic device, it is required to be resistant to impact and difficult to break.

[0010] One aspect of the present invention is to provide a display device with good display quality as one of the problems. Or, to provide a display device with high reliability as one of the problems. Or, to provide a display device with low power consumption as one of the problems. Or, to provide a display device with high impact resistance as one of the problems. Or, to provide a display device that is difficult to break as one of the problems. Or, to provide a lightweight display device as one of the problems. Or, to provide a display device with high productivity as one of the problems. Or, to provide a novel display device as one of the problems.

[0011] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not need to solve all of these problems. Note that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0012] One aspect of the present invention is a display device having a first display area, a second display area, a third display area, a first area, and a second area, and having a function of bending in the first area and the second area, wherein the first display area and the second display area are adjacent via the first area, the second display area and the third display area are adjacent via the second area, and in the first area ​​​​​​​​​​​Furthermore, it does not have electrodes that electrically connect the first display area and the second display area, and in the second area Furthermore, it is a display device that does not have electrodes that electrically connect the second display area and the third display area. .

[0013] One aspect of the present invention is a first display area, a second display area, a third display area, and a first area A display having a first region and a second region, and having the function of bending in the first region and the second region. The apparatus comprises a first display area and a second display area adjacent to each other via the first area, and The second display area and the third display area are adjacent to each other via the second area, and in the first area , has a first wiring that electrically connects the first display area and the second display area, and the second area In this, there is a second wiring that electrically connects the second display area and the third display area, and the first The wiring and the second wiring are characterized by being meander-shaped. It is placed there.

[0014] One aspect of the present invention has a first display area, a second display area, and a first area, The first display area and the second display area are adjacent to each other via the first area, and the first display area is the first The display device is characterized by having the following wiring, the first wiring being meander-shaped. The display area may have a curved surface.

[0015] One aspect of the present invention has a first display area, a second display area, and a first area, The first display area and the second display area are adjacent to each other via the first area, and the first display area is the first The first area has wiring, the second display area has second wiring, the first area has third wiring, and Wiring 1 is electrically connected to wiring 3, and wiring 2 is electrically connected to wiring 3. The table is characterized in that at least one of the first or third wiring is meander-shaped. This is a display device. The first display area may have a curved surface.

[0016] Alternatively, one aspect of the present invention is the above-mentioned display device having a first substrate and a second substrate. That is, the first display area, the second display area, and the first area, or the first display area The second display area, the third display area, the first area, and the second area are located on the first substrate. It is sandwiched between the first and second substrates. The first and second substrates are preferably flexible. stomach.

[0017] Each of the first to third display regions includes a first display element and a second display element. The first display element has the function of reflecting visible light, and the second display element emits visible light. It has a function.

[0018] The first display element can be, for example, a liquid crystal element. The second display element can be, for example, Organic EL elements can be used.

[0019] Alternatively, one aspect of the present invention includes the above-mentioned display device, a touch sensor, an antenna, a battery, and a housing. It is an electronic device having a body, speaker, microphone, or operating switch. [Effects of the Invention]

[0020] According to one aspect of the present invention, it is possible to provide a display device with good display quality. This can provide highly reliable display devices, or low-power display devices. We can provide a stand or other similar device. Alternatively, we can provide a shock-resistant display device or similar device. Alternatively, a durable display device can be provided. Alternatively, a lightweight display device can be provided. We can provide a place to put things, or we can provide a highly productive display device, etc. It is possible to do so. Or, it is possible to provide novel display devices, etc.

[0021] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the descriptions in the drawings and claims, and the specification, drawings, and claims will be clear from the description, drawings, and claims. It is possible to extract other effects from any of these descriptions. [Brief explanation of the drawing]

[0022] [Figure 1] A diagram illustrating electronic devices. [Figure 2] A diagram illustrating electronic devices. [Figure 3] A block diagram illustrating electronic devices. [Figure 4] A diagram illustrating one embodiment of the present invention. [Figure 5] A diagram illustrating one embodiment of the present invention. [Figure 6] A diagram illustrating one embodiment of the present invention. [Figure 7] A diagram illustrating one embodiment of the present invention. [Figure 8] A diagram illustrating one embodiment of the present invention. [Figure 9] A diagram illustrating one embodiment of the present invention. [Figure 10] A diagram illustrating one embodiment of the present invention. [Figure 11] A diagram illustrating one embodiment of the present invention. [Figure 12] A diagram illustrating one embodiment of the present invention. [Figure 13] A diagram illustrating one embodiment of the present invention. [Figure 14] A diagram illustrating one embodiment of the present invention. [Figure 15] A diagram illustrating one embodiment of the present invention. [Figure 16]A diagram illustrating one embodiment of the present invention. [Figure 17] A diagram illustrating one embodiment of the present invention. [Figure 18] A diagram illustrating one embodiment of the present invention. [Figure 19] A diagram illustrating one embodiment of the present invention. [Figure 20] A diagram illustrating one embodiment of the present invention. [Figure 21] A diagram illustrating one embodiment of the present invention. [Figure 22] A diagram illustrating one embodiment of the present invention. [Figure 23] A diagram illustrating one embodiment of the present invention. [Figure 24] A diagram illustrating one embodiment of the present invention. [Figure 25] A diagram illustrating one embodiment of the present invention. [Figure 26] A diagram illustrating one embodiment of the present invention. [Figure 27] A diagram illustrating one embodiment of the present invention. [Figure 28] A diagram illustrating one embodiment of the present invention. [Figure 29] A diagram illustrating an example of a light-emitting element configuration. [Figure 30] A diagram illustrating an example of an electronic device. [Modes for carrying out the invention]

[0023] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be changed in various ways. Those skilled in the art will readily understand that further modifications are possible. Therefore, the present invention can be implemented in the following forms. The interpretation is not limited to the description of the state. Furthermore, the structure of the invention described below... Furthermore, the same reference numeral is used across different drawings for parts that are identical or have similar functions. The explanation of its use and repetition may be omitted.

[0024] Furthermore, the position, size, and scope of each component shown in the drawings, etc., are intended to facilitate understanding of the invention. Therefore, the actual location, size, and range may not be represented. The invention is not necessarily limited to the position, size, scope, etc. disclosed in drawings, etc. For example, in the actual manufacturing process, processes such as etching can be used to remove layers and resist masks. While some values ​​may be unintentionally reduced, they are sometimes omitted for the sake of easier understanding.

[0025] Furthermore, especially in top views (also called "plan views") and perspective views, the invention is made easily understandable. Therefore, the description of some components may be omitted. Also, some hidden lines and other elements may be omitted. It may be omitted.

[0026] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is merely a label and does not indicate any order or ranking, such as process sequence or layering sequence. Furthermore, even for terms that do not have ordinal numbers attached in this specification, etc., confusion of constituent elements should be avoided. Therefore, ordinal numbers may be used in the claims. Also, in this specification, etc. Even if a term has an ordinal number attached to it, if a different ordinal number is attached in the claims, In some cases, this may be the case. Also, even if a term is given an ordinal number in this specification, etc., patent Ordinal numbers may be omitted in the scope of claims, etc.

[0027] Furthermore, in this specification, the terms "electrode" and "wiring" do not limit the functionality of these components. It is not fixed. For example, "electrode" can be used as part of "wiring". The reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and "wiring". This also includes cases where the "line" is provided as a single integrated element.

[0028] In this specification, the terms "above" and "below" refer to the relative positions of the constituent elements, specifically whether they are directly above or below. It is not limited to being below and in direct contact. For example, "electrode on insulating layer A" If the expression is "B", then it is not necessary for electrode B to be in direct contact with insulating layer A, Cases containing other components between marginal layer A and electrode B are not excluded.

[0029] Furthermore, the source and drain functions may differ when using transistors with different polarities, or when rotating In circuit operation, the direction of the current changes, and depending on the operating conditions, they can be swapped. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's assume that.

[0030] Furthermore, if it is explicitly stated in this specification, etc., that X and Y are connected. This refers to the case where X and Y are electrically connected, and the case where X and Y are functionally connected. The cases in which X and Y are directly connected are disclosed in this specification, etc. Therefore, the connection relationships are not limited to predetermined relationships, such as those shown in the diagram or text. Connections other than those shown in the diagram or text are also included as those described in the diagram or text. ru.

[0031] Furthermore, in this specification, "electrically connected" means "having some kind of electrical effect." This includes cases where the connection is made via ". Here, "something that has some electrical effect" The term "connection" is not particularly limited as long as it enables the exchange of electrical signals between connected objects. Therefore, even when expressed as "electrically connected," in actual circuits, In some cases, there is no logical connection point, and the wiring simply extends without any apparent purpose.

[0032] Note that channel length refers to, for example, the length of the semiconductor (or transistor) in a top view of a transistor. When the zista is in the ON state, the part of the semiconductor through which current flows and the gate electrode overlap each other. In the region where a channel is formed, the source (source region or source electrode) This refers to the distance from the drain (drain region or drain electrode). In a transistor, the channel length is not necessarily the same across all regions. That is, The channel length of a single transistor may not be fixed to a single value. Therefore, The detailed explanation states that the channel length is any one value, the maximum value, in the region where the channel is formed. , or the minimum value or the average value.

[0033] Channel width refers to, for example, the channel width of a semiconductor (or transistor) in a top view of a transistor. The region where the part of the semiconductor through which current flows when the gate electrode is ON and the gate electrode overlap each other. Alternatively, the length (width) between the source and drain in the region where the channel is formed. This refers to the extension direction of the channel length and the extension direction of the channel width, which are often perpendicular to each other. In a single transistor, the channel width is not necessarily the same across all regions. In other words, the channel width of a single transistor may not be fixed to a single value. In this specification, the channel width is any one value in the region where the channel is formed. This represents the maximum value, minimum value, or average value.

[0034] Furthermore, depending on the transistor structure, the channel may actually be formed in the region where the channel is formed. Channel width (hereinafter also referred to as "effective channel width") and shown in the top view of the transistor. The channel width that is calculated (hereinafter also referred to as the "apparent channel width") may differ from the actual channel width. For example, if the gate electrode covers the side of the semiconductor layer, the effective channel width is, apparently, The channel width may become larger, and its effects may become undeniable. For example, in fine detail. Furthermore, in a transistor where the gate electrode covers the side surface of the semiconductor, a chain formed on the side surface of the semiconductor In some cases, the proportion of the Nell-forming region may become larger. In such cases, the apparent channel width may be larger than The effective channel width becomes larger.

[0035] In such cases, it can be difficult to estimate the effective channel width through actual measurements. For example, in order to estimate the effective channel width from the design value, the shape of the semiconductor is known. An assumption is necessary. Therefore, if the shape of the semiconductor is not precisely known, the effective method is It is difficult to accurately measure channel width.

[0036] Therefore, in this specification, the apparent channel width is referred to as the "enclosed channel width (SCW:Su It is sometimes referred to as "rounded channel width." Also, in this specification... So, when simply referring to channel width, it means the enclosed channel width or apparent channel width It may refer to the channel width. Or, in this specification, when it is simply referred to as channel width, it refers to the actual It may refer to the effective channel width. Note that channel length, channel width, and effective channel Width, apparent channel width, enclosed channel width, etc., can be determined by analyzing cross-sectional TEM images, etc. The value can be determined by factors such as [specific factors].

[0037] Furthermore, the field-effect mobility of the transistor and the current value per channel width are calculated to determine this. In some cases, the calculation may be performed using the enclosed channel width. In that case, the effective channel The values ​​may differ from those obtained when calculating using the channel width.

[0038] Furthermore, "impurities" in semiconductors refer to components other than the main components that make up the semiconductor. For example, Elements with a concentration of less than 0.1 atomic percent can be considered impurities. The presence of impurities can, for example, cause problems. This is due to the increasing Density of State (DOS) of semiconductors and carrier migration. Mobility may decrease, crystallinity may decrease, etc. Semiconductors may undergo oxide processes. In the case of semiconductors, impurities that alter the properties of the semiconductor include, for example, Group 1 elements and Group 1 elements. Oxides of Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals. There are elements other than the main components of semiconductors, such as hydrogen, lithium, sodium, silicon, and hydroxyadiene. These include porcini, phosphorus, carbon, and nitrogen.

[0039] Furthermore, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. This refers to the state in which something is positioned. Therefore, it also includes cases where the angle is between -5° and 5°. Also, "abbreviated "Parallel" refers to a state where two straight lines are positioned at an angle between -30° and 30°. Furthermore, "perpendicular" and "orthogonal" refer to two lines positioned at an angle of 80° to 100°. This refers to a state in which it is in a certain position. Therefore, it also includes cases where the angle is between 85° and 95°. "Straight" refers to a state in which two straight lines are positioned at an angle between 60° and 120°.

[0040] In this specification, etc., the terms "identical," "same," and "equal" are used to refer to count values ​​and measured values. When saying "uniform" or "uniform" (including synonyms for these), unless otherwise specified. The result should include an error margin of plus or minus 20%.

[0041] Furthermore, in this specification, a resist mask is formed by photolithography, If an etching process (removal process) is performed later, unless otherwise specified, the resist must be removed. The scum shall be removed after the etching process is completed.

[0042] Furthermore, in this specification, the high power supply potential VDD (also referred to as "VDD" or "H potential") is used. ) is a potential higher than the low power supply potential VSS (also called "VSS" or "L potential"). This indicates the power supply potential. Furthermore, the low power supply potential VSS refers to a power supply with a potential lower than the high power supply potential VDD. It indicates the electric potential. It also refers to the ground potential (also called "GND" or "GND potential") as VDD. Alternatively, it can be used as VSS. For example, if VDD is at ground potential, VSS is at ground potential. If the potential is lower than the ground potential and VSS is the ground potential, then VDD is a potential higher than the ground potential. It is that rank.

[0043] Note that the words "membrane" and "layer" may differ in some cases or depending on the situation. Therefore, they can be interchanged. For example, the term "conductive film" can be replaced with "conductive layer." In some cases, it may be possible to change the term to "insulating film". Alternatively, for example, the term "insulating film" may be used. In some cases, it may be possible to change the term to "insulating layer."

[0044] Furthermore, in this specification, the term "transistor" includes a gate, a drain, and a source. It is an element having at least three terminals. And, drain (drain terminal, drain Between the region (or drain electrode) and the source (source terminal, source region, or source electrode) It has a channel region, through which current flows between the source and drain. This is possible. In this specification, the channel region is defined as a region where current is mainly present. It refers to the area in which something flows.

[0045] Furthermore, unless otherwise specified, the transistors described herein are enhancement type (no -A field-effect transistor (of the -Marie-off type) is used. Also, the transistors shown in this specification, etc. Unless otherwise specified, it is assumed to be an n-channel transistor. Therefore, its threshold voltage Voltage (also called "Vth") is assumed to be greater than 0V unless otherwise specified.

[0046] In this specification, the Vth of a transistor having a back gate is defined as follows: If not available, Vth refers to the value obtained when the back gate potential is the same potential as the source or gate. .

[0047] Furthermore, unless otherwise specified in this specification, off-current refers to the state in which a transistor is in the off state. This refers to the drain current when the device is in a non-conductive state (also called a "non-conductive state" or "interrupted state"). The "off" state, unless otherwise specified, refers to the state where the gate and source are... When the voltage between the channels Vgs is lower than the threshold voltage Vth, in a p-channel transistor, This refers to a state where the voltage Vgs between the gate and source is higher than the threshold voltage Vth. For example, The off-current of an n-channel transistor is defined as the threshold voltage Vgs between the gate and source. Sometimes, this refers to the drain current when it is lower than the voltage value Vth.

[0048] The off-current of a transistor may depend on Vgs. Therefore, the off-current of the transistor The statement that the current is less than or equal to I means that there exists a value of Vgs such that the transistor's off-current is less than or equal to I. It is sometimes said that the off-current of a transistor is the off-state at a given Vgs. An off state within a predetermined Vgs range, or a sufficiently reduced off current, can be obtained. This can sometimes refer to the off-current in the off state of Vgs, etc.

[0049] As an example, consider a drain with a threshold voltage Vth of 0.5V and Vgs of 0.5V. Current is 1 × 10 -9 A is such that the drain current at Vgs = 0.1V is 1 × 10⁻¹⁰ -13 A is such that the drain current at Vgs = -0.5V is 1 × 10⁻¹⁰ -19 A and Vgs The drain current at -0.8V is 1 × 10⁻⁶ -22 n-channel transistor such that A Let's assume a transistor. The drain current of this transistor is, when Vgs is -0.5V, Alternatively, in the range where Vgs is between -0.8V and -0.5V, 1 × 10 -19 Below A Therefore, the off-current of the transistor is 1 × 10⁻⁶ -19 When it is less than or equal to A, Yes, the drain current of the transistor is 1 × 10⁻⁶. -22 There exists a Vgs that is less than or equal to A. Therefore, the off-current of the transistor is 1 × 10⁻⁶ -22 Sometimes it is said that it is less than or equal to A.

[0050] The off-current of a transistor may be temperature-dependent. In this specification, the off-current is Unless otherwise specified, room temperature (RT) is 60°C, 8 This may represent the off-current at 5°C, 95°C, or 125°C. Alternatively, it may refer to the transistor. The temperature at which the reliability of semiconductor devices containing a transistor is guaranteed, or the transistor At temperatures in which the included semiconductor devices are used (for example, temperatures between 5°C and 35°C) It can sometimes represent the off-current. When the off-current of a transistor is less than or equal to I, it means that RT, 6 At 0°C, 85°C, 95°C, and 125°C, the reliability of the semiconductor device containing the transistor is maintained. The temperature at which the transistor is proven, or the temperature at which the semiconductor device containing the transistor is used (e.g.) For example, at temperatures between 5°C and 35°C, the off-current of the transistor is less than or equal to I. This can sometimes refer to the existence of a value for gs.

[0051] The off-current of a transistor may depend on the voltage Vds between the drain and source. In this specification, unless otherwise specified, the off-current is defined as Vds of 0.1V, 0.8V, and 1 V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or This may represent the off-current at 20V, or the semiconductor containing the transistor. Vds that guarantees the reliability of the device, or semiconductor device containing the transistor. It can sometimes represent the off-current at Vds used in a transistor. The current is less than or equal to I, meaning that Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2V. 0.5V, 3V, 3.3V, 10V, 12V, 16V, 20V, the transistor in question is included. The reliability of the semiconductor device is guaranteed by Vds, or the semiconductor containing the transistor. In devices and other equipment, the off-current of the transistor at Vds is less than or equal to I at Vg. This can sometimes refer to the existence of a value for s.

[0052] In the above explanation of off-current, you may substitute "drain" for "source." That is, off-current This can also refer to the current flowing through the source when the transistor is in the off state.

[0053] Furthermore, in this specification, the term "leakage current" may be used interchangeably with "off current." In this specification, etc., off-current means, for example, when a transistor is in the off state. It can sometimes refer to the current flowing between the source and the drain.

[0054] In this specification and elsewhere, "metal oxide" refers to a broad term for metals. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS) They are classified into the following categories. For example, when a metal oxide is used in the active layer of a transistor, the metal acid These oxides are sometimes called oxide semiconductors. In other words, metal oxides have amplification and rectification effects. And if it has at least one switching action, the metal oxide is a metal oxide semi A conductor (metal oxide semiconductor), abbreviated as OS. This is possible. Also, when referred to as OS FET, it refers to metal oxide or oxide semiconductor. It can be rephrased as a transistor with a body.

[0055] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0056] Furthermore, in this specification, etc., CAAC (c-axis aligned crystal ), and CAC (cloud-aligned composite) are sometimes used. Yes. Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or material composition. It represents.

[0057] Furthermore, in this specification, CAC-OS or CAC-metal oxide means Some parts of the material have conductive properties, and some parts have insulating properties, and the material as a whole has It has semiconductor properties. Note that it is either CAC-OS or CAC-metal oxid When e is used in the active layer of a transistor, its conductive function is due to the electrons that act as carriers (and The function of (holes) is to allow electrons to flow, while the insulating function is to prevent the flow of electrons, which act as carriers. By making the conductive and insulating functions work complementaryly, a switch is created. The function to turn it on / off is CAC-OS or CAC-metal It can be applied to oxides such as CAC-OS or CAC-metal oxid In e, by separating each function, it is possible to maximize the performance of both functions. Cut.

[0058] Furthermore, in this specification, CAC-OS or CAC-metal oxide is defined as a conductive It has an electrically conductive region and an insulating region. The conductive region has the conductive function described above, and the insulating region The region has the insulating function described above. Furthermore, within the material, there are conductive regions and insulating regions. The regions may be separated at the nanoparticle level. Furthermore, there are conductive regions and insulating regions. These can be unevenly distributed within the material. Also, the conductive areas appear blurred around the edges, creating a cloudy appearance. They may sometimes be observed connected in a specific way.

[0059] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0060] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is used in the channel region of the transistor. In this case, the transistor has a high current driving force in the ON state, that is, a large ON current, and High field-effect mobility can be obtained.

[0061] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite (metal It can also be called a matrix composite.

[0062] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to the drawings.

[0063] <Electronic equipment 100> Figure 1(A) is a perspective view of a portable electronic device 100 including a display device according to one embodiment of the present invention. Figure 1(B) shows the left side of the electronic device 100, and Figure 1(C) shows the front of the electronic device 100. Figure 1(D) shows the right side of the electronic device 100. Also, Figure 2(A) is a comparison of Figure 1(A). Figure 2(B) is a cross-sectional view of the region indicated by the dashed line X1-X2. This is a cross-sectional view of the region indicated by the dashed line Y1-Y2.

[0064] The electronic device 100 includes a housing 101, an audio output device 102, an operation switch 103, and an audio It has an input device 104, an imaging device 105, a display device 110, etc. The display device 110 is , a display area 111 that overlaps the front of the electronic device 100, and a display area that overlaps the left side of the electronic device 100 It has a display area 112 and a display area 113 that overlaps the right side of the electronic device 100.

[0065] In addition, the electronic device 100 includes a circuit board 160, a battery 170, an antenna 180, etc. (See Figures 2(A) and (B)). Also, the arithmetic unit 161 is located on the circuit board 160. The signaling device 162, the storage device 163, and the display unit control device 164, the attitude detection unit 165, etc. It is provided. Furthermore, other semiconductor devices may be provided in area 151 within the housing 101. i. Also, in region 151, there are heat dissipation members, electromagnetic wave absorbing or shielding members, and / or Alternatively, functional components such as magnetic shielding members may be provided.

[0066] [Example Hardware Configuration] The following describes an example of a hardware configuration applicable to the electronic device 100.

[0067] Figure 3 is a block diagram showing an example configuration applicable to the electronic device 100.

[0068] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although a block diagram is shown as an example, the actual components are not completely separated by function. This is difficult because one component can be involved in multiple functions, or one function can be involved in multiple components. It could also be involved in that.

[0069] Furthermore, the configuration of the electronic device 100 illustrated in Figure 3 is just one example, and it is not necessary to include all components. No. The electronic device 100 only needs to have the necessary components from among the components shown in Figure 3. Furthermore, it may have components other than those shown in Figure 3.

[0070] The electronic device 100 includes a display device 110, a processing unit 161, a touch sensor 131, and a storage device 1 63, Display unit control device 164, Touch sensor controller 132, Battery controller 171, Power receiving unit 172, Battery 170, Sound controller 169, Audio input device 1 04, audio output device 102, communication device 162, antenna 180, attitude detection unit 165, external Interface 168, imaging device 105, vibration device 166, sensor module 167, It can have, among other things.

[0071] Storage device 163, display unit control device 164, touch sensor controller 132, battery cord Controller 171, sound controller 169, communication device 162, attitude detection unit 165, External interface 168, imaging device 105, vibration device 166, sensor module 16 Each of the seven components is connected to the arithmetic unit 161 via the bus line 141.

[0072] The touch sensor 131 may be mounted on top of the display device 110. Function 1 may be added to the display device 110.

[0073] The arithmetic unit 161 is, for example, a central processing unit (CPU). It can function as a g Unit. The arithmetic unit 161 can function as, for example, a touch sensor. Controller 132, Battery controller 171, Sound controller 169, Communication Device 162, attitude detection unit 165, external interface 168, imaging device 105, vibration device It has the function of controlling each component such as the 166 and the sensor module 167. The device 161 may also be equipped with additional functions such as a storage device 163 and a display control device 164. stomach.

[0074] Signals are transmitted between the arithmetic unit 161 and each component via the bus line 141. The arithmetic unit 161 receives input from each component connected via the bus line 141. Functions for processing the signals, and functions for generating signals to output to each component, etc. It has the capability to comprehensively control each component connected to the bus line 141. .

[0075] Furthermore, channels are formed in the arithmetic unit 161 and in ICs and other components. By using an oxide semiconductor, a type of metal oxide, in the semiconductor layer, an extremely low off-current is achieved. A transistor can also be used. This transistor has an extremely low off-current. Therefore, the transistor retains the charge (data) that has flowed into the capacitive element that functions as a memory element. By using it as a switch to maintain data, it is possible to ensure a long-term data retention period. This can be achieved. By using this characteristic in the registers and cache memory of the arithmetic unit 161, The arithmetic unit 161 is operated only when necessary, and otherwise the information of the previous processing is stored in the memory element By having the child device take over, normally-off computing becomes possible, and electronic devices It is possible to reduce power consumption by 100.

[0076] The arithmetic unit 161 interprets and executes instructions from various programs via the processor. Then, it performs various data processing and program control. Programs that can be executed by the processor. It may be stored in the memory area of ​​the processor, or it may be stored in the storage device 163. It's okay if it's not allowed.

[0077] In addition to the CPU, the arithmetic unit 161 also includes a DSP (Digital Signal Processor). Processors, GPUs (Graphics Processing Units), etc. Other microprocessors can be used individually or in combination. Microprocessor FPGA (Field Programmable Gate A rray) and FPAA (Field Programmable Analog Array) PLDs (Programmable Logic Devices) such as ay This configuration can also be considered as having been achieved through this method.

[0078] The arithmetic unit 161 may have main memory. The main memory is RAM (Randomized Memory). Volatile memory such as ROM (Read-On Memory) and ROM (Read-On Memory) It can be configured to include non-volatile memory such as (ly Memory).

[0079] Examples of RAM provided in main memory include DRAM (Dynamic Random). (Virtual Access Memory) is used, and a virtual workspace is used for the arithmetic unit 161. Memory space is allocated and used accordingly. The operation stored in the storage device 163 Program systems, application programs, program modules, program data, etc. These are loaded into RAM for execution. The RAM, or program module, is directly accessed and operated by the arithmetic unit 161.

[0080] On the other hand, ROM does not require rewriting of the BIOS (Basic Input / Output). It can store the ut System and firmware, etc. As for ROM, SCRROMs and OTPROMs (One Time Programmable Read) Only Memory), EPROM (Erasable Programmability) e Read Only Memory, etc., can be used. UV-EPROM (Ultra-Vi) allows for the erasure of stored data by ultraviolet irradiation. olet Erasable Programmable Read Only Mem ory), EEPROM (Electrically Erasable Program Examples include (read-only memory) and flash memory. ru.

[0081] The storage device 163 could be, for example, flash memory, MRAM (Magnetores istive Random Access Memory), PRAM (Phase change RAM), ReRAM (Resistance RAM), FeRAM ( Memory devices using non-volatile memory elements such as Ferroelectric RAM. , or DRAM (Dynamic RAM) or SRAM (Static RAM), etc. A storage device or the like using a volatile memory element may also be used. For example, a hard disk Hard Disc Drive (HDD) and Solid State Drive (S You can also use a storage media drive such as an SSD. stomach.

[0082] Additionally, an HDD or SS can be attached and detached via a connector through the external interface 168. Storage devices such as D, and recording media such as flash memory, Blu-ray discs, and DVDs. The media drive can also be used as the storage device 163. A storage device 163 is not built into the electronic device 100 but is located outside the electronic device 100. It may also be used as such. In that case, it is connected via the external interface 168, The system may also be configured to exchange data wirelessly using the communication device 162.

[0083] The display control unit 164 is connected to the arithmetic unit 161 via the bus line 141. The display unit control device 164 is connected to the display device 110. The display unit control device 164 is connected to the arithmetic unit In response to drawing instructions input from 161, the display device 110 is controlled to display the information on the display device 110. It has the function of displaying a fixed image.

[0084] The touch sensor 131 is connected to the touch sensor controller 132. The controller 132 is connected to the arithmetic unit 161 via the bus line 141.

[0085] Furthermore, the touch sensor controller 132 is connected to the processing unit 161 via the bus line 141. The touch sensor 131 is controlled according to their requests. Also, the signal received by the touch sensor The data received by the touch sensor is output to the arithmetic unit 161 via the bus line 141. The touch sensor controller 132 has a function to calculate touch position information from the signal. It may be calculated by the arithmetic unit 161, or it may be calculated by the arithmetic unit 161.

[0086] Furthermore, the touch sensor 131 is based on a signal supplied from the touch sensor controller 132. Then, it detects when an object to be detected, such as a finger or stylus, approaches or comes into contact with it, and adjusts its position The location information can be output to the touch sensor controller 132.

[0087] Furthermore, the touch sensor 131 and the touch sensor controller 132 are subjected to It is preferable that the system has a function to acquire the height distance to the object being detected. It is preferable that the system has a function to acquire the magnitude of the pressure applied to the detection surface. It is preferable that the system has a function to acquire the size of the surface area in contact with the detection surface.

[0088] The touch sensor 131 is mounted on the display side of the display panel, with the module containing the touch sensor overlapping it. The configuration can be such that a module equipped with a touch sensor is provided. It is preferable that at least a portion of it is flexible and can be bent along the display panel. The module equipped with the touch sensor and the display panel can be bonded together with adhesive or similar. A polarizing plate or buffer material (separator) may also be placed between these. The thickness of the module is preferably less than or equal to the thickness of the display panel.

[0089] Even if the touch sensor 131 is a touch panel in which the display device and touch sensor are integrated, Good. For example, an on-cell type touch panel or an in-cell type touch panel. It is preferable that on-cell or in-cell touch panels be thin and lightweight. Furthermore, on-cell or in-cell touch panels can reduce the number of components. Therefore, costs can be reduced.

[0090] The touch sensor 131 detects when an object to be detected, such as a finger, approaches or comes into contact with it. Various types of sensors can be applied. For example, capacitive, resistive, surface acoustic wave, and infrared sensors. Sensors employing methods such as linear, electromagnetic induction, and optical systems can be used. In addition, optical sensors using photoelectric conversion elements and pressure sensors using pressure-sensitive elements are used. It is also permissible to have two or more different types of sensors, or sensors of the same type. It is acceptable to have two or more of these.

[0091] For example, a capacitive touch sensor has a pair of conductive layers. Capacitive bonding occurs between the pair of conductive layers. They are joined together. When the object to be detected touches, presses against, or approaches a pair of conductive layers, Detection can be performed by utilizing the change in capacitance between a pair of conductive layers.

[0092] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitance systems can be categorized into self-capacitance systems and mutual-capacitance systems, primarily based on differences in their drive mechanisms. Using a mutual capacitance method is preferable because it facilitates simultaneous multi-point detection.

[0093] The battery controller 171 can manage the charge status of the battery 170. The battery controller 171 supplies power from the battery 170 to each component. The power receiving unit 172 receives power supplied from an external source and charges the battery 170. It has the ability to receive power according to the charge state of the battery 170. The operation of unit 172 can be controlled.

[0094] Battery 170 has, for example, one or more primary and secondary batteries. Examples of rechargeable batteries that can be used include lithium-ion rechargeable batteries and lithium-ion batteries. Examples include rechargeable batteries. In addition, Battery 170 is a battery that also... A protective circuit may be provided to prevent overcharging and over-discharging of the battery.

[0095] When used indoors, AC power may be used as the external power source. When using the electronic device 100 disconnected from an external power source, a large charge / discharge capacity is required for extended periods. A battery 170 that enables the use of electronic devices 100 over time is desirable. When charging, a charger capable of supplying power to the electronic device 100 may be used. When doing so, use a USB (Universal Serial Bus) connector, AC adapter, etc. Charging may be performed using the wired method, or by electric field coupling, electromagnetic induction, or electromagnetic resonance (electromagnetic The configuration may also include charging using a wireless power transfer method such as a resonant coupling method.

[0096] The battery controller 171 has, for example, a battery management unit (BMU) It may also be possible. The BMU collects battery cell voltage and cell temperature data, and detects overcharging and over-discharging. Monitoring, cell balancer control, battery degradation status management, battery level (State of Charge) It performs calculations of rge (SOC) and controls fault detection.

[0097] The battery controller 171 receives power from the battery 170 via a power supply line (not shown). The battery controller 171 controls the power supply to each component. This configuration includes, for example, multiple-channel power converters or inverters, protection circuits, etc. It is possible.

[0098] The housing 101 into which the battery 170 is incorporated is flexible and can be bent for use. In configurations where this is possible, at least a portion of the battery 170 may also be flexible. Preferred. A secondary battery applicable to battery 170 is, for example, a lithium-ion secondary battery. Examples include lithium-ion polymer secondary batteries. Furthermore, these batteries have flexibility. To prevent this, it is advisable to use a laminated bag for the battery's outer casing.

[0099] The film used for laminated bags is a metal film (aluminum, stainless steel, nickel steel). (etc.), plastic films made from organic materials, organic materials (organic resins, fibers, etc.) and non- Hybrid material films containing mechanical materials (such as ceramics), carbon-containing inorganic films ( Single-layer films selected from carbon film, graphite film, etc. A laminated film consisting of multiple parts is used. Metal films are easy to emboss, and When boss processing is performed to create recesses or protrusions, the surface area of ​​the film exposed to the outside air increases. Therefore, it has excellent heat dissipation properties.

[0100] In particular, as a laminated bag, a metal film with recessed and raised areas formed by embossing is used. When a laminated bag is used, the strain generated by the stress applied to the laminated bag This can alleviate the problem. As a result, when the secondary battery is bent, the laminated bag will not tear. This is preferable because it can effectively reduce problems such as smudging.

[0101] Furthermore, it is preferable that the battery controller 171 has a low power consumption function. For example, as a low-power consumption function, it detects when there is no input to the electronic device 100 for a certain period of time, and The arithmetic unit 161 reduces the clock frequency or stops the clock input, To stop the operation of the 161 itself, to stop the operation of the auxiliary memory, each component Examples include reducing electricity consumption by decreasing the amount of electricity supplied to the network. These functions are performed by the battery controller 171 alone, or in conjunction with the computing unit 161. It can be executed.

[0102] The audio input device 104 includes, for example, a microphone or an audio input connector. The audio output device 102 also includes, for example, a speaker and an audio output connector. 104 and the audio output device 102 are each connected to the sound controller 169, It is connected to the arithmetic unit 161 via line 141. Sound input to the audio input device 104 The voice data is converted into a digital signal in the sound controller 169, and the sound controller This is processed in the controller 169 and the arithmetic unit 161. Meanwhile, the sound controller 1 69 generates an audible audio signal to the user in response to instructions from the arithmetic unit 161, and outputs audio. The output is sent to the power device 102. The audio output connector of the audio output device 102 is connected to an earphone. Audio output devices such as headphones and headsets can be connected, and the sound controller is connected to the device. The audio generated by the controller 169 is output.

[0103] The communication device 162 can communicate via the antenna 180. For example, the computing device 1 Instructions from 61 to connect electronic device 100 to a computer network It controls the signal and transmits that signal to the computer network. The Internet, intranet, and other infrastructures are the foundation of the Wide Web (WWW). XtraNet, PAN (Personal Area Network), LAN (L) ocal Area Network), CAN(Campus Area Network), CAN(Campus Area Network) rk), MAN (Metropolitan Area Network), WAN (W ide Area Network), GAN (Global Area Network) The electronic device 100 can be connected to a computer network such as k) and communicate with it. Furthermore, if multiple methods are used as the communication method, the antenna 180 will be used for that communication method. You may have multiple depending on the law.

[0104] The communication device 162 can, for example, be equipped with a high-frequency circuit (RF circuit) to transmit and receive RF signals. Good. High-frequency circuits interact with electromagnetic and electrical signals in frequency bands defined by national legislation. A circuit that converts signals and uses those electromagnetic signals to communicate wirelessly with other communication devices. Yes, there is. A practical frequency band generally used is between several tens of kHz and several tens of GHz. The high-frequency circuit connected to antenna 180 has circuit sections that support multiple frequency bands. The circuit section includes an amplifier, mixer, filter, DSP, RF transceiver, etc. It can be configured to include the following: When performing wireless communication, the communication protocol or communication technology and And, LTE (Long Term Evolution), GSM (Global Standard Sprinter) ystem for Mobile Communication (registered trademark), EDG E(Enhanced Data Rates for GSM Evolution) , CDMA2000(Code Division Multiple Access 2000), WCDMA (Wideband Code Division Multi Communication standards such as ple Access (registered trademark), or Wi-Fi (registered trademark), B IEEE communication standards such as LUETOOTH (registered trademark) and ZigBee (registered trademark) Standardized specifications can be used.

[0105] Furthermore, the communication device 162 may also have a function to connect the electronic device 100 to a telephone line. When making a call via a telephone line, the communication device 162 receives instructions from the arithmetic unit 161. Accordingly, the system controls the connection signal for connecting the electronic device 100 to the telephone line, and the signal is transmitted Make a call on the phone line.

[0106] The communication device 162 outputs to the display device 110 from the broadcast radio waves received by the antenna 180. It may have a tuner that generates a video signal. For example, the tuner may have a demodulation circuit The configuration includes an AD conversion circuit (analog-to-digital conversion circuit) and a decoder circuit, etc. It is possible. The demodulation circuit has the function of demodulating the signal input from antenna 180. Furthermore, the AD conversion circuit has the function of converting the demodulated analog signal into a digital signal. The decoder circuit decodes the video data contained in the digital signal and controls the display unit. It has the function of generating a signal to be transmitted to device 164.

[0107] The decoder may also be configured to have a splitter circuit and multiple processors. The splitter circuit is It has the function of spatially and temporally dividing the input video data and outputting it to each processor. Multiple processors decode the input video data and send it to the display unit control device 164. It generates the signal to be transmitted. In this way, as a decoder, multiple processors process the data. By applying a configuration that processes in parallel, it is possible to decode extremely large amounts of video data. This is possible. In particular, when displaying video with a resolution exceeding Full HD, pressure A decoder circuit that decodes the compressed data is a processor with extremely high processing power. It is preferable that it has . Also, for example, the decoder circuit has 4 or more, preferably 8 or more. More preferably, the configuration includes multiple processors capable of 16 or more parallel processing. It is preferable. The decoder also separates the video signal and other signals included in the input signal. It may have a circuit for separating (text information, program information, authentication information, etc.).

[0108] The broadcast signals that can be received by Antenna 180 are those transmitted from terrestrial or satellite sources. Radio waves are one example. Also, among the broadcast radio waves that can be received by antenna 180, analog There are various types of broadcasting, including traditional and digital broadcasting, as well as broadcasts that include both video and audio, or audio only. For example, the UHF band (approximately 300MHz to 3GHz) or the VHF band (30MHz to 300MHz) It is possible to receive broadcast radio waves transmitted in a specific frequency band among (Hz). Also, for example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. As a result, it is possible to display an image having a resolution exceeding full high definition on the display device 110. For example, it is possible to display an image having a resolution of 4K2K, 8K4K, 16K8K, or higher. For example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. As a result, it is possible to display an image having a resolution exceeding full high definition on the display device 110. For example, it is possible to display an image having a resolution of 4K2K, 8K4K, 16K8K, or higher. For example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. As a result, it is possible to display an image having a resolution exceeding full high definition on the display device 110. For example, it is possible to display an image having a resolution of 4K2K, 8K4K, 16K8K, or higher. For example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. As a result, it is possible to display an image having a resolution exceeding full high definition on the display device 110. For example, it is possible to display an image having a resolution of 4K2K, 8K4K, 16K8K, or higher. For example, by using a plurality of data received in a plurality of frequency bands, the transfer rate can be increased, and more information can be obtained. As a result, it is possible to display an image having a resolution exceeding full high definition on the display device 110. For example, it is possible to display an image having a resolution of 4K2K, 8K4K, 16K8K, or higher. 。

[0109] Also, the tuner may be configured to generate a signal to be transmitted to the display unit control device 164 using broadcast data transmitted by a data transmission technology via a computer network. Also, the tuner may be configured to generate a signal to be transmitted to the display unit control device 164 using broadcast data transmitted by a data transmission technology via a computer network. At this time, when the received signal is a digital signal, the tuner may not have a demodulation circuit and an A-D conversion circuit. At this time, when the received signal is a digital signal, the tuner may not have a demodulation circuit and an A-D conversion circuit.

[0110] The posture detection unit 165 has a function of detecting the inclination and posture of the electronic device 100. For example, as the posture detection unit 165, an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a gyro sensor, etc. can be used. Also, a plurality of these sensors may be combined and used. The posture detection unit 165 has a function of detecting the inclination and posture of the electronic device 100. For example, as the posture detection unit 165, an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a gyro sensor, etc. can be used. Also, a plurality of these sensors may be combined and used. The posture detection unit 165 has a function of detecting the inclination and posture of the electronic device 100. For example, as the posture detection unit 165, an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a gyro sensor, etc. can be used. Also, a plurality of these sensors may be combined and used. The posture detection unit 165 has a function of detecting the inclination and posture of the electronic device 100. For example, as the posture detection unit 165, an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a gyro sensor, etc. can be used. Also, a plurality of these sensors may be combined and used.

[0111] As the external interface 168, for example, one or more buttons provided on the housing 101, switches (also referred to as housing switches), and other input components can be connected to the external port. The external interface 168 is connected to the arithmetic device 161 via the bus line 141. As the housing switch, there are a switch associated with turning on / off the power, a button for volume adjustment, a button for camera shooting, etc. As the external interface 168, for example, one or more buttons provided on the housing 101, switches (also referred to as housing switches), and other input components can be connected to the external port. The external interface 168 is connected to the arithmetic device 161 via the bus line 141. As the housing switch, there are a switch associated with turning on / off the power, a button for volume adjustment, a button for camera shooting, etc. As the external interface 168, for example, one or more buttons provided on the housing 101, switches (also referred to as housing switches), and other input components can be connected to the external port. The external interface 168 is connected to the arithmetic device 161 via the bus line 141. As the housing switch, there are a switch associated with turning on / off the power, a button for volume adjustment, a button for camera shooting, etc. As the external interface 168, for example, one or more buttons provided on the housing 101, switches (also referred to as housing switches), and other input components can be connected to the external port. The external interface 168 is connected to the arithmetic device 161 via the bus line 141. As the housing switch, there are a switch associated with turning on / off the power, a button for volume adjustment, a button for camera shooting, etc. As the external interface 168, for example, one or more buttons provided on the housing 101, switches (also referred to as housing switches), and other input components can be connected to the external port. The external interface 168 is connected to the arithmetic device 161 via the bus line 141. As the housing switch, there are a switch associated with turning on / off the power, a button for volume adjustment, a button for camera shooting, etc.

[0112] Furthermore, the external ports on the external interface 168 include, for example, a computer or a PC. It can be configured to connect to external devices such as a linter via a cable. It has USB ports, among others. It also has an external port, LAN (Local Area Network). Network connection terminal, digital broadcast reception terminal, AC adapter connection terminal It may also have the following: In addition to wired connections, it may also use light such as infrared, visible light, and ultraviolet light. The configuration may also include a transceiver for communication.

[0113] The imaging device 105 is connected to the processing unit 161 via the bus line 141. For example, housing When a switch located there is pressed, or in conjunction with a touch operation on the touch sensor 131, It can capture still images or videos. The imaging device 105 also has a light source for shooting. It is permissible to do so. For example, lamps such as xenon lamps, and light-emitting elements such as LEDs and organic ELs. The following can be used. Alternatively, the display device 110 may be used as a light source for photography. In that case, you may use not only white light but also light of various other colors for photography.

[0114] The vibration device 166 includes a vibration element that vibrates the electronic device 100 and a vibration control unit that controls the vibration element. It has a controller and a vibration element such as a vibration motor (eccentric motor) and a resonant actuator. Elements that can convert electrical or magnetic signals into vibrations, such as ethometers, magnetostrictive elements, and piezoelectric elements. The child can be used.

[0115] The vibration device 166 controls the frequency and amplitude of the vibration of the vibration element in response to commands from the arithmetic unit 161. By controlling the duration of the vibration, etc., the electronic device 100 can be vibrated in various vibration patterns. This can be done. For example, vibrations linked to the operation of a housing switch, etc., electronic device 1 Vibration synchronized with the startup of the 00, and synchronized with videos and audio played by the video playback application. Vibration, vibration linked to incoming email, and vibration linked to input operation to touch sensor 131 Various vibration patterns based on the actions performed in various applications, such as vibrations. The vibrations can be generated by the vibration device 166.

[0116] The sensor module 167 includes a sensor unit and a sensor controller. The controller supplies power to the sensor unit from the battery 170, etc. The controller receives input from the sensor unit, converts it into a control signal, and sends it to bus line 141. The output is sent to the arithmetic unit 161 via the sensor controller. You may perform sensor management or perform calibration processing on the sensor unit. The controller may be configured to include multiple controllers that control the sensor unit.

[0117] The sensor module 167 can measure, for example, force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance Separation, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation Various sensors capable of measuring line, flow rate, humidity, gradient, vibration, odor, or infrared radiation. It may also be configured to include these features.

[0118] The above is a description of an example of a hardware configuration applicable to the electronic device 100.

[0119] <Display device 110> Figure 4(A) is a perspective view of the display device 110. Figure 4(B) is a plan view of the display device 110. It is as described above. As described above, the display device 110 includes a display area 111, a display area 112, and a display area 113. The display area 111, the display area 112, and the display area 113 each have a plurality of pixels 230 arranged in a matrix.

[0120] When the pixels 230 are arranged in a 1920×1080 matrix, a display device 110 capable of displaying at a so-called full high vision (also referred to as "2K resolution", "2K1K", "2K", etc.) resolution can be realized. Also, for example, when the pixels are arranged in a 3840×2160 matrix, a display device 110 capable of displaying at a so-called ultra high vision (also referred to as "4K resolution", "4K2 K", "4K", etc.) resolution can be realized. Also, for example, when the pixels are arranged in a 7680×4320 matrix, a display device 110 capable of displaying at a so-called super high vision (also referred to as "8K resolution", "8K4K", "8K", etc.) resolution can be realized. By increasing the number of pixels, it is also possible to realize a display device 110 capable of displaying at resolutions such as 16K and 32K.

[0121] Also, the display device 110 has input terminals 121, input terminals 122, and input terminals 123. The input terminal 121 is electrically connected to the display area 111. The input terminal 122 is electrically connected to the display area 112. The input terminal 123 is electrically connected to the display area 113.

[0122] Also, the input terminal 121, the input terminal 122, and the input terminal 123 are electrically connected to the display unit control device 16 4. The display unit control device 164 is connected to the display area 111, the display area 112, ​​​​​​​and each of the display areas 113 has the function of supplying signals for displaying an image. .

[0123] The signal for displaying an image in the display area 111 is transmitted via the input terminal 121 to the display area 111. The signal for displaying an image in the display area 112 is supplied via the input terminal 122. The signal for displaying an image in display area 113 is supplied to the display area 112. It is supplied to the display area 113 via 123.

[0124] Input terminals 121, 122, and 123 are bent within the housing 101, and the circuit It is electrically connected to the display control device 164 provided on the circuit board 160.

[0125] Furthermore, the display device 110 has a bent region 114 between the display region 111 and the display region 112. Furthermore, a bent region 115 is located between the display region 111 and the display region 113. Display device 110 By bending it in the bending region 114 and bending region 115 and placing it inside the housing 101, The display area 111 can be placed on top of the front of the electronic device 100. The display area 112 can be placed on top of the left side of 100. Also, the electronic device 100 The display area 113 can be placed on top of the right side of the display area 113.

[0126] In addition, the bending region 114 and the bending region 115 include the display region 111, the display region 112, and No wiring or electrodes are provided for transmitting signals to and / or the display area 113. In particular, bend In area 114, wiring and electrodes for electrically connecting display area 111 and display area 112 are provided. Not provided. Also, the display area 111 and the display area 113 are electrically connected in the bending area 115. No wiring or electrodes are provided for this purpose.

[0127] Figure 5 shows a perspective view of the display device 110 in the state of being bent in the bending region 114 and bending region 115. The figure shows that by not providing wiring or electrodes in the bending region 114 and bending region 115, the bending part Even if the radius of curvature R is reduced, the display device 11 may still malfunction due to short circuits or open circuits in the wiring or electrodes. No malfunctions or reduced reliability will occur. Specifically, the radius of curvature R is 1 mm or less. It is possible to make the radius of curvature R 0.5 mm or less. Alternatively, the curve The radius of incidence R can be set to 0.1 mm or less.

[0128] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0129] (Embodiment 2) In this embodiment, a more specific configuration example of a display device 110 according to one aspect of the present invention will be described. do.

[0130] Figure 6(A) is a block diagram illustrating an example configuration of the display device 110. The display device 110 is Furthermore, there may be a circuit 232a between the input terminal 121 and the display area 111. A circuit 233a may be provided between terminal 121 and display area 111. Also, input terminal 1 There may be a circuit 232b between 22 and the display area 112. Also, the input terminal 122 and A circuit 233b may be located between the display area 112. Also, the input terminal 123 and the display area There may be a circuit 232c between region 113. Also, input terminal 123 and display area 11 Circuit 233c may be present between 3.

[0131] Circuits 232a, 232b, and 232c function, for example, as scan line driving circuits. Circuits 233a, 233b, and 233c are, for example, signal line driving circuits. Circuits 232a, 232b, 232c, 233a, and 233b function accordingly. The drive circuit section is sometimes referred to as the drive circuit section, along with circuit 233c. It may be placed within the domain.

[0132] Alternatively, part or all of the drive circuit section may be implemented as an IC and mounted on the display device 110. Figure 7(A) shows IC373a and I using the COF (Chip On Film) method, etc. A perspective view of the display device 110 with C373b and IC373c mounted is shown.

[0133] Furthermore, the configuration may be configured without providing at least one of the display area 112 or the display area 113. This is also possible. Figure 7(B) shows a perspective view of the display device 110 without the display area 113.

[0134] Next, we will describe the configuration examples of the display area 111, circuit 232a, and circuit 233a. Note that display area 112, circuit 232b, and circuit 233b, and display area 11 3. Circuits 232c and 233c, as well as display area 111, circuit 232a, and circuit A configuration similar to that of 233a can be used.

[0135] <Configuration Example 1> Figure 6(B) illustrates an example configuration of the display area 111, circuit 232a, and circuit 233a. This is a block diagram.

[0136] Furthermore, the display area 111 has m wires 235 and n wires 236. The wiring 235 is arranged approximately parallel to each other, and its potential is controlled by circuit 232a. The n wires 236 are arranged approximately parallel to each other, and their potential is controlled by circuit 233a. It is controlled. Furthermore, the display area 111 has a plurality of pixels 230 arranged in a matrix. .

[0137] Each wiring 235 is among the pixels 230 arranged in m rows and n columns in the display area 111, It is electrically connected to n pixels 230 arranged in any row. Also, each wiring 236 is Of the m pixels 230 arranged in m rows and n columns, m pixels 230 are located in any of the columns. They are electrically connected. m and n are both integers greater than or equal to 1.

[0138] Pixel 230 has a pixel circuit 237 and a display element 225. Pixel circuit 237 is a display element This is a circuit that drives the sub-element 225. The transistor in the drive circuit section drives the pixel circuit 237. It can be formed simultaneously with the constituent transistors. That is, as disclosed herein, A part or all of the drive circuit is integrally formed on the same substrate as the pixel section using a transistor. A system-on-panel configuration can be formed.

[0139] Furthermore, part or all of the drive circuit section is formed on another substrate, and the display device 110 is electrically connected to it. They may be connected. For example, part or all of the drive circuit section may be formed using a single crystal substrate. The display device 110 may be electrically connected.

[0140] Additionally, there are 230 pixels that emit or reflect red light, and 2 pixels that emit or reflect green light. 30, and 230 pixels that emit or reflect blue light function together as a single pixel. By controlling the amount of light emitted by each pixel, full-color display can be achieved. Therefore, these three pixels function as subpixels. Furthermore, the three subpixels emit... The reflected light colors are not limited to a combination of red, green, and blue, but also include yellow, cyan, and magenta. That's good too.

[0141] Alternatively, the four subpixels may be combined and function as a single pixel. For example, red light, green light. Three subpixels that emit or reflect colored light and blue light respectively, and three subpixels that emit or reflect white light. Sub-pixels that emit or reflect light may be added. By adding sub-pixels that emit or reflect white light, the surface The brightness of the display area can be increased. By increasing the number of subpixels that function as a single pixel, Subpixels that emit or reflect light, such as red, green, blue, yellow, cyan, and magenta, as appropriate. By using them in combination, the reproducible color gamut can be expanded.

[0142] [Display element] A display device according to one aspect of the present invention may use various forms or have various display elements It is possible. An example of a display element is an electroluminescent (EL) element (organic EL elements including materials and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, Red LEDs, green LEDs, blue LEDs, etc.), transistors (transistors that emit light according to the current). (Electron emission elements, liquid crystal elements, electronic inks, electrophoretic elements, grating lights) Using GLV (Global Valve) and MEMS (Micro-Electro-Mechanical Systems) Display elements, digital micromirror devices (DMDs), digital micro-shutter DMS, MIRASOL (registered trademark), Interferometric Modulation IMOD elements, shutter-type MEMS display elements, optical interference type MEMS display elements Display element, electrowetting element, piezoelectric ceramic display, carbon nanochip Display elements using tubes, etc., where contrast, brightness, etc. are controlled by electrical or magnetic forces. There are display media whose reflectivity, transmittance, etc. change. Also, quantum dots are used as display elements. It is also possible. An example of a display device using EL elements is an EL display. An example of a display device using a sub-emission element is a field emission display (F ED) or Surface Conductive Electron Emission Display (SED: Surface-conduction electron emission element display) Examples include quantum electron-emitter displays. An example of a display device using dots is a quantum dot display. An example of a display device using this method is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display). LCD displays, reflective LCD displays, direct-view LCD displays, projection LCD displays Examples include displays. Electronic ink, electronic powder fluid (registered trademark), or electrophoretic elements. Examples of display devices used include electronic paper. In addition, plasma displays are also used. A display panel (PDP) may also be used.

[0143] Furthermore, when realizing semi-transmissive or reflective liquid crystal displays, pixel power The poles should be designed so that some or all of them function as reflective electrodes. For example, The pixel electrodes may be made of aluminum, silver, or the like, either partially or entirely. Furthermore, in that case, it is also possible to install memory circuits such as SRAM below the reflective electrode. This further reduces power consumption.

[0144] Furthermore, when using LEDs, graphene or graphite is placed under the LED electrodes or nitride semiconductor. Threads may be placed. Graphene and graphite can be layered to form multilayer films. This is also good. In this way, by providing graphene or graphite, nitrides can be placed on top of it. Semiconductors, such as n-type GaN semiconductor layers having crystals, can be easily deposited. Furthermore, an LED is constructed by providing a p-type GaN semiconductor layer having crystals on top of it. This can be done. Furthermore, the relationship between graphene or graphite and the n-type GaN semiconductor layer having crystals An AlN layer may be provided in between. Note that the GaN semiconductor layer of the LED is MOCVD ( Metal Organic Chemical Vapor Deposition) The film may be formed using this method. However, by providing graphene, the GaN semiconductor of the LED can be modified. The body layers can also be deposited using the sputtering method.

[0145] Figures 8(A) and 8(B) show examples of circuit configurations that can be used for pixel 230. ru.

[0146] [An example of a pixel circuit for a light-emitting display device] The pixel circuit 237 shown in Figure 8(A) consists of a transistor 431, a capacitive element 438, and a transistor It has a zista 433 and a transistor 434. Furthermore, the pixel circuit 237 is a display element. It is electrically connected to 225. In Figure 8(A), a light-emitting element is used as the display element 225. This shows the pixel circuit 237 in this case.

[0147] One of the source and drain of transistor 431 is connected to the wiring to which the data signal is applied ( Below, it is electrically connected to the signal line DL_n. Furthermore, the gateway of transistor 431 The gate is electrically connected to the wiring to which the gate signal is applied (hereinafter referred to as scan line GL_m). ru.

[0148] Transistor 431 has the function of controlling the writing of data signals to node 435. .

[0149] One of the pair of electrodes of the capacitive element 438 is electrically connected to node 435, and the other is connected to node 435. It is electrically connected to transistor 437. In addition, the source and drain of transistor 431 This is electrically connected to node 435.

[0150] Capacitive element 438 functions as a holding capacitor to hold the data written to node 435. It has.

[0151] One of the sources and drains of transistor 433 is electrically connected to the potential supply line VL_a. The other end is electrically connected to node 437. Furthermore, the gate of transistor 433 The terminal is electrically connected to node 435.

[0152] One of the sources and drains of transistor 434 is electrically connected to the potential supply line V0. The other end is electrically connected to node 437. Furthermore, the gate of transistor 434 is It is electrically connected to the scan line GL_m.

[0153] One of the light-emitting element (display element 225), either the anode or the cathode, is connected to the potential supply line VL_b. One end is electrically connected to node 437.

[0154] Examples of light-emitting elements include organic electroluminescent elements (also known as "organic EL elements"). ) and the like can be used. However, the light-emitting element is not limited to this, for example, Inorganic EL elements made of mechanical materials may also be used. The light-emitting element depends on the material used for the light-emitting element. In addition to visible light, it can also emit infrared and ultraviolet light.

[0155] For example, one of the potential supply lines VL_a or VL_b has a high power supply potential VDD. One side is given, and the other side is given a low power supply potential VSS.

[0156] In the display device having the pixel circuit 237 shown in Figure 8(A), for example, the pixel of each row is generated by circuit 232a. The basic circuit 237 is selected sequentially, and transistors 431 and 434 are turned ON. Then, the data signal is written to node 435.

[0157] The pixel circuit 237, on which data has been written to node 435, has transistor 431 and The state is maintained when the transistor 434 is turned off. Furthermore, it writes to node 435. Current flows between the source and drain of transistor 433 in accordance with the potential of the data it contains. The amount is controlled, and the light-emitting element emits light with brightness corresponding to the amount of current flowing through it. This is done sequentially row by row. By doing so, the image can be displayed.

[0158] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 237 shown in Figure 8(B) includes a transistor 431 and a capacitive element 438. Figure 8(B) shows the pixel circuit 237 when a liquid crystal element is used as the display element 225. They are doing it.

[0159] The potential of one of the pair of electrodes of the display element 225 (liquid crystal element) is determined according to the specifications of the pixel circuit 237. The settings are adjusted as appropriate. The display element 225 (liquid crystal element) receives data written to node 436. The orientation state is set by the display element of each of the multiple pixel circuits 237. A common potential may be applied to one of the pair of electrodes in 225. Also, each row A different potential may be applied to one of the pair of electrodes of the display element 225 for each pixel circuit 237.

[0160] Driving methods for display devices equipped with liquid crystal elements include, for example, TN mode, STN mode, V A mode, ASM (Axially Symmetric Aligned Micro -cell) mode, OCB (Optically Compensated Bire fringence) mode, FLC (Ferroelectric Liquid C (rystal) mode, AFLC (AntiFerroelectric Liquid) Crystal mode, MVA mode, PVA (Patterned Vertical) Alignment) mode, IPS mode, FFS mode, or TBA (Tr You may also use modes such as the (Ansverse Bend Alignment) mode. In addition to the above-mentioned driving methods, the display device can also be driven by ECB (Electric All y Controlled Birefringence) mode, PDLC (Poly mer Dispersed Liquid Crystal) mode, PNLC (Po Lymer Network Liquid Crystal) mode, guest host mode These include, however, there are various liquid crystal elements and their driving methods. It is possible to use things.

[0161] Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The display element 225 (liquid crystal element) may be configured from the above. The liquid crystal that shows the blue phase has a response speed Because the time interval is short (less than 1 msec) and optically isotropic, orientation processing is unnecessary, and it is not dependent on the field of view. It has little chance of survival.

[0162] In the pixel circuit 237 of the mth row and nth column, one of the source and drain of transistor 431 One end is electrically connected to signal line DL_n, and the other end is electrically connected to node 436. The gate of transistor 431 is electrically connected to scan line GL_m. 31 has the function of controlling the writing of data signals to node 436.

[0163] One of the pair of electrodes of the capacitive element 438 is connected to a wiring (capacitive line CL) to which a specific potential is supplied. One is electrically connected to node 436, and the other is electrically connected to node 436. Also, display element 225( The other electrode of the pair of electrodes of the liquid crystal element is electrically connected to node 436. The potential value is set appropriately according to the specifications of the pixel circuit 237. The capacitive element 438 is, It functions as a storage capacity for holding data written to D436.

[0164] For example, in a display device having the pixel circuit 237 shown in Figure 8(B), for example, circuit 232a Each row of pixel circuit 237 is selected sequentially, and transistor 431 is turned on, and node 436 Write the data signal to it.

[0165] When a data signal is written to node 436, the pixel circuit 237 has transistor 431 turned off. By entering a certain state, it enters a held state. By performing this sequentially for each row, the display area 111 is Images can be displayed.

[0166] <Configuration Example 2> Next, the display element 225 has both a reflective liquid crystal element and a light-emitting element, and transmits moisture An example configuration of the display area 111, which can display both d and reflective modes, is described below.

[0167] Figure 9(A) illustrates an example configuration of the display area 111, circuit 232a, and circuit 233a. This is a block diagram. The display area 111 consists of multiple pixels 230 arranged in a matrix, multiple Wiring G1, multiple wiring G2, multiple wiring ANO, multiple wiring CSCOM, multiple wiring S It has one and more wirings S2. Wirings G1, G2, ANO, and CSC OM is electrically connected to multiple pixels 230 and circuit 232a arranged in direction R. Wiring S Wiring 1 and S2 are electrically connected to a plurality of pixels 230 and circuit 233a arranged in direction C. do.

[0168] Note that Figure 9(A) shows a configuration with one circuit 232a and one circuit 233a. Circuits 232a and 233a for driving liquid crystal elements, and circuit 23 for driving light-emitting elements Circuit 2a and circuit 233a may be provided separately.

[0169] Pixel 230 has a reflective liquid crystal element and a light-emitting element. In pixel 230, The element and the light-emitting element have overlapping portions.

[0170] Figure 9(B1) shows an example of the configuration of the electrode 311 of pixel 230. The electrode 311 is located at pixel 2 It functions as a reflective electrode for the liquid crystal element in 30. An aperture 451 is provided in electrode 311. It's being kicked.

[0171] In Figure 9(B1), the light-emitting element 360 located in the region overlapping with electrode 311 is shown by a dashed line. The light-emitting element 360 is positioned in conjunction with the aperture 451 of the electrode 311. Therefore, the light emitted by the light-emitting element 360 is projected towards the display surface side through the aperture 451.

[0172] In Figure 9(B1), pixels 230 adjacent to direction R are pixels corresponding to different emission colors. At this time, as shown in Figure 9(B1), in two pixels adjacent to each other in direction R, aperture 45 It is preferable that the 1s are placed at different positions on the electrode 311 so that they are not arranged in a single line. This makes it possible to separate the two light-emitting elements 360, and the light emitted by the light-emitting elements 360 This phenomenon occurs when light from an adjacent pixel 230 enters the colored layer of that pixel (also known as "crosstalk"). .) can be suppressed. Also, by arranging two adjacent light-emitting elements 360 apart Therefore, when differentiating the EL layer of the light-emitting element 360 using a shadow mask, etc. However, this makes it possible to create a display device with high resolution.

[0173] Alternatively, the arrangement shown in Figure 9(B2) may also be used.

[0174] If the ratio of the total area of ​​the aperture 451 to the total area of ​​the non-apertures is too large, the liquid crystal elements will be used. The display becomes dim. Also, the ratio of the total area of ​​openings 451 to the total area of ​​non-openings If the value is too small, the display using the light-emitting element 360 will become dim.

[0175] Furthermore, if the area of ​​the opening 451 provided in the electrode 311, which functions as a reflective electrode, is too small, The efficiency of the light that can be extracted from the light emitted by the optical element 360 decreases.

[0176] The shape of the opening 451 may be, for example, a polygon, a square, an ellipse, a circle, or a cross. This can be done. It may also be in the shape of a long, narrow stripe, slit, or checkerboard pattern. The aperture 451 may be positioned close to an adjacent pixel. Preferably, the aperture 451 represents the same color. The pixel is positioned close to the other pixels it indicates. This helps suppress crosstalk.

[0177] [Circuit configuration example] Figure 10 is a circuit diagram showing an example configuration of pixel 230. In Figure 10, two adjacent pixels 2 It shows 30.

[0178] Pixel 230 is switch SW1, capacitive element C1, liquid crystal element 340, switch SW2, and It has an inverter M, a capacitive element C2, and a light-emitting element 360, etc. Furthermore, the pixel 230 has Wiring G1, Wiring G2, Wiring ANO, Wiring CSCOM, Wiring S1, and Wiring S2 are electrically It is connected to the liquid crystal element 340. Also, in Figure 10, the wiring VCOM is electrically connected to the liquid crystal element 340. 1. The wiring VCOM2 is shown, which is electrically connected to the light-emitting element 360.

[0179] Figure 10 shows an example where transistors are used for switches SW1 and SW2. It is showing.

[0180] Switch SW1 has its gate connected to wiring G1, and either its source or drain connected to wiring S Connected to 1, with the source or drain being one electrode of the capacitive element C1, and the liquid crystal element It is connected to one electrode of sub-electrode 340. Capacitive element C1 is connected to the other electrode via wiring CSCOM. It is connected to the other electrode of the liquid crystal element 340, which is connected to the wiring VCOM1.

[0181] Switch SW2 has its gate connected to wiring G2, and either its source or drain connected to wiring S Connected to 2, the other of the source or drain is one electrode of the capacitive element C2, the transistor It is connected to the gate of transistor M. Capacitive element C2 has its other electrode connected to the source of transistor M. Alternatively, one of the drains is connected to wiring ANO. Transistor M is the source Alternatively, the other end of the drain is connected to one electrode of the light-emitting element 360. The other electrode is connected to the wiring VCOM2.

[0182] In Figure 10, transistor M has two gates sandwiching a semiconductor, and these are connected. This shows an example of increasing the current that transistor M can supply. It is possible.

[0183] Wiring G1 is used to provide a signal that controls switch SW1 to a conductive or non-conductive state. This is possible. A predetermined potential can be applied to the wiring VCOM1. The wiring S1 can be liquid crystal A signal can be provided to control the orientation state of the liquid crystal in element 340. (Wiring: CSCO) A predetermined potential can be applied to M.

[0184] Wiring G2 is used to provide a signal that controls switch SW2 to a conductive or non-conductive state. This is possible. A potential difference is generated between wiring VCOM2 and wiring ANO, causing the light-emitting element 360 to emit light. The potentials can be applied to each. Wiring S2 controls the conduction state of transistor M. It can provide signals to control the situation.

[0185] The pixel 230 shown in Figure 10, for example, when displaying in reflection mode, has wiring G1 and wiring It is driven by a signal applied to line S1 and displays using optical modulation by the liquid crystal element 340. This is possible. Also, when displaying in transparent mode, the following is applied to wiring G2 and wiring S2. It can be driven by a signal and illuminate the light-emitting element 360 to display information. When driving with a D, apply to each of the following: wiring G1, wiring G2, wiring S1, and wiring S2. It can be driven by a signal.

[0186] In Figure 10, one pixel 230 contains one liquid crystal element 340 and one light-emitting element 360. An example with one pixel 230 is shown, but it is not limited to this. Figure 11(A) shows one Liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 36 This shows an example having 0w). Pixel 230 shown in Figure 11(A) is different from Figure 10, A pixel capable of displaying full color with a single pixel.

[0187] In Figure 11(A), in addition to the example in Figure 10, wiring G3 and wiring S3 are connected to pixel 230. It is.

[0188] In the example shown in Figure 11(A), for example, there are four light-emitting elements 360, each of which is red (R), Light-emitting elements that emit green (G), blue (B), and white (W) light can be used. As the liquid crystal element 340, a reflective liquid crystal element that exhibits white color can be used. Furthermore, when displaying in reflective mode, a highly reflective white display can be used. Furthermore, when displaying in transmissive mode, high color rendering can be achieved with low power consumption. .

[0189] Figure 11(B) also shows an example of the configuration of pixel 230. Pixel 230 is connected to electrode 311 A light-emitting element 360w that overlaps with the opening of and a light-emitting element 3 arranged around the electrode 311 It has 60r, light-emitting element 360g, and light-emitting element 360b. Light-emitting element 360r, It is preferable that the light-emitting element 360g and the light-emitting element 360b have approximately the same light-emitting area. .

[0190] [Example of cross-sectional structure] Next, an example of the cross-sectional structure of the display device 110 will be explained using Figures 12(A) and (B). Oh, here we will explain display area 111, but display area 112 and display area 113 A similar configuration can be used.

[0191] Figure 12(A) shows a cross-section of the input terminal 121, circuit 233a, and display area 111. Circuit 233a has transistor 4010, and display area 111 has transistor 4 It has transistors 011 and 4012. Transistors 4010 to 4 012 is provided on the insulating layer 4102.

[0192] Figure 12(B) shows a cross-sectional view of transistor 4010. Note that transistor 4010 to Transistors 4012 have a similar configuration to each other. Transistor 4010 has electrode 2 46, electrode 244a, electrode 244b, electrode 223, semiconductor layer 242, and insulating layer 226 The electrode 223 is formed on the insulating layer 4102, and the insulating layer 4103 is on the electrode 223. It is formed. The semiconductor layer 242 is formed on the insulating layer 4103, and an insulating layer is formed on the semiconductor layer 242. An edge layer 226 is formed, and an electrode 246 is formed on the insulating layer 226.

[0193] The electrode 246, insulating layer 226, and semiconductor layer 242 are insulated from insulating layer 4104 and insulating layer 41 It is covered with 05. Electrodes 244a and 244b are provided on the insulating layer 4105. The electrode 244a is an opening provided in part of the insulating layer 4104 and the insulating layer 4105. In this configuration, it is electrically connected to a portion of the semiconductor layer 242. Also, the electrode 244b is an insulating layer In the openings provided in 4104 and other parts of the insulating layer 4105, the semiconductor layer 242 It is electrically connected to other parts.

[0194] The electrode 246 and the semiconductor layer 242 have regions that overlap each other via the insulating layer 226. The electrode 223 and the semiconductor layer 242 have overlapping regions with respect to the insulating layer 4103. Electrode 246 can function as a gate electrode. Electrode 223 can function as a back gate electrode. Yes, it is possible. Electrode 244a can function as either the source electrode or the drain electrode. Electrode 244b can function as either the source electrode or the other of the drain electrode. The insulating layer 226 is It can function as a gate insulating layer. Transistor 4010 shown in Figures 12(A) and (B). In transistor 4012, the region overlapping with electrode 246 in semiconductor layer 242 is channel A channel is formed. The region in the semiconductor layer 242 where the channel is formed is called the "channel formation region". Also said.

[0195] Furthermore, both electrode 246 and electrode 223 can function as gate electrodes. Therefore, the insulating layer Both 226 and the insulating layer 4103 can function as gate insulating layers. Also, electrode 2 One of the electrodes, 46 or 223, is called the "gate" or "gate electrode," and the other is called the "back electrode." It is sometimes called a "gate" or "back gate electrode." Also, one of them is called the "first gate." It is sometimes called the "electrode" and the other the "second gate electrode."

[0196] By providing a gate electrode and a back gate electrode with a semiconductor layer in between, further, the gate electrode By setting the electrode and the back gate electrode to the same potential, the region in the semiconductor layer where carriers flow is Because it becomes larger in the film thickness direction, the amount of carrier movement increases. As a result, The on-current of the zista increases. Therefore, it has a large on-current relative to its occupied area. A transistor can be realized. That is, the transistor's occupancy relative to the required on-current. The area can be reduced. Therefore, it is possible to realize a semiconductor device with a high degree of integration. ru.

[0197] Furthermore, since the gate electrode and back gate electrode are formed of conductive layers, outside the transistor... Function to prevent the generated electric field from acting on the channel formation region (especially against static electricity, etc.) It has an electric field shielding function. Furthermore, the back gate electrode is formed to be larger than the semiconductor layer, By covering the semiconductor layer with the gate electrode, the electric field shielding function can be enhanced.

[0198] Furthermore, the gate electrode and back gate electrode each have the function of shielding against external electric fields. Because of this, the charge of charged particles and other elements generated outside both surfaces casts an shadow on the channel formation region of the semiconductor layer. No resonance. As a result, stress tests (e.g., applying a negative charge to the gate - GBT(M)) Degradation due to inus Gate Bias-Temperature stress test It is suppressed. Also, the gate electrode and back gate electrode are affected by the electric field generated from the drain electrode. The electric field can be blocked so that it does not act on the semiconductor layer. Therefore, the drain voltage This can suppress fluctuations in the on-current rise voltage caused by these fluctuations. The effect is particularly pronounced when potential is supplied to the gate electrode and back gate electrode. It occurs in [location].

[0199] Note that the BT stress test is a type of accelerated stress test, and it tests the transient effects that occur due to long-term use. It allows for the rapid evaluation of changes in the characteristics of sta (changes over time). In particular, BT stress tests. The variation in the transistor's threshold voltage before and after the test is an important indicator for examining reliability. Therefore, the smaller the fluctuation in the threshold voltage, the more reliable the transistor is considered to be. .

[0200] Furthermore, it has a gate electrode and a back gate electrode, and the gate electrode and back gate electrode By setting the poles to the same potential, the fluctuation in threshold voltage is reduced. Therefore, multiple transistors The variation in electrical characteristics between ziters is also reduced at the same time.

[0201] Furthermore, a transistor with a back gate electrode is a +GBT transistor where a positive charge is applied to the gate. The threshold voltage fluctuations before and after stress testing are also observed in transients without back gate electrodes. It's smaller than a star.

[0202] Furthermore, by forming the back gate electrode with a light-shielding conductive film, the back gate electrode This prevents light from entering the semiconductor layer from the side. Therefore, it prevents photodegradation of the semiconductor layer. This prevents degradation of electrical characteristics, such as a shift in the transistor's threshold voltage. .

[0203] Depending on the purpose or application, it may be necessary to omit the electrode 223.

[0204] Furthermore, the display device 110 shown in Figure 12(A) includes capacitive elements 4020a and 402 It has 0b. Capacitive element 4020a is the source electrode or drain of transistor 4012. One part of the electrode has a region where it overlaps with electrode 4021 via the insulating layer 4103. Electrode 4021 is formed of the same conductive layer as electrode 223. Capacitive element 4020b is a capacitance It has the same configuration as element 4020a. Transistor 4012 drives the light-emitting element 360. Transistor 4011 has the function of driving the liquid crystal element 340.

[0205] Transistor 4012 is electrically connected to light-emitting element 360. In this embodiment, light-emitting element An EL element is used as the child 360.

[0206] An EL element has a layer containing a light-emitting compound (also called the "EL layer") between a pair of electrodes. When a potential difference greater than the threshold voltage of the EL element is generated between a pair of electrodes, the EL layer... Holes are injected from the anode side, and electrons are injected from the cathode side. The injected electrons and holes are EL. The layers recombine, causing the light-emitting material in the EL layer to emit light.

[0207] Furthermore, EL elements are distinguished by whether the light-emitting material is an organic compound or an inorganic compound. Generally speaking, the former are called organic EL elements, and the latter are called inorganic EL elements.

[0208] Organic EL elements, when a voltage is applied, release electrons from one electrode and holes from the other electrode. These are each injected into the EL layer. Then, these carriers (electrons and holes) recombine. This causes the luminescent organic compound to form an excited state, and then that excited state returns to the ground state. It emits light at that time. From this mechanism, such a light-emitting element is a current-excited type light-emitting element. They are called children.

[0209] In addition to luminescent compounds, the EL layer also contains materials with high hole injection potential and materials with high hole transport potential. , hole-blocking materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar It may contain substances with high electron transport and hole transport properties.

[0210] The EL layer can be created using vapor deposition (including vacuum deposition), transfer, printing, inkjet, or coating methods. It can be formed by any of the following methods.

[0211] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0212] If at least one of the pair of electrodes is transparent in order to extract light emitted from a light-emitting element Good. Then, a transistor and a light-emitting element are formed on the substrate, and from the side opposite to the substrate... Top emission structures for extracting light, and structures for extracting light from the substrate side. Bottom emission structures and dual emission structures that extract light from both sides. The mission-type structure includes light-emitting elements, and any injection-type light-emitting element can be applied.

[0213] The configuration of the light-emitting element 360 is a stacked structure of electrode 4030, light-emitting layer 4511, and electrode 4031. This is the basic structure, but it is not limited to this configuration. It can be adjusted to match the direction of light extracted from the light-emitting element 360. Therefore, the configuration of the light-emitting element 360 can be changed as appropriate.

[0214] The partition wall 4510 is formed using an organic insulating material or an inorganic insulating material, particularly a photosensitive resin. Using the material, an opening is formed on the electrode 4030, and the side surface of the opening has a continuous curvature. It is preferable to form it so that it becomes an inclined surface.

[0215] Even if the light-emitting layer 4511 consists of a single layer, it is configured so that multiple layers are stacked. Either way is fine.

[0216] To prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting element 360, the electrode 4031 A protective layer may be formed on the partition wall 4510. The protective layer may be silicon nitride, acid nitride, etc. Silicon oxide, aluminum oxide, aluminum nitride, aluminum oxide nitride, aluminum oxide nitride It is possible to form aluminum, DLC (Diamond-Like Carbon), etc. Yes, it is possible. Also, a filler material is placed in the space sealed by the substrate 4006 and the sealing material 4005. 4514 is provided and sealed. In this way, it is highly airtight so as not to be exposed to the outside air. , protective films with less degassing (laminated films, UV-curing resin films, etc.) It is preferable to package (enclose) the contents in bar material.

[0217] In addition to inert gases such as nitrogen and argon, filler material 4514 can also be UV-curing resin. Thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic resin, and Liimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA (Ethylene vinyl acetate) and the like can be used. Also, dried filler 4514 It may contain an agent.

[0218] The sealing material 4005 contains glass materials such as glass frit and two-component resins, etc. Resin materials such as heat-curing resins, photocurable resins, and thermosetting resins can be used. Yes, it is possible. Furthermore, the sealant 4005 may contain a desiccant.

[0219] Furthermore, by using a microcavity structure for the light-emitting element, it is possible to extract light with high color purity. This is possible. In addition, by combining a microcavity structure and a color filter, the image can be improved. This reduces congestion and improves the visibility of the displayed images.

[0220] Electrodes 4030 and 4031 ("pixel electrode layer", "common") apply voltage to the display element. Also called the "electrode layer" or "counter electrode layer." ) In this case, the direction of the extracted light and the electrodes The transparency and reflectivity should be selected based on the location where the layer is made and the pattern structure of the electrode layer. stomach.

[0221] For example, electrodes 4030 and 4031 are indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide indium tin oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Use a light-transmitting conductive material such as indium tin oxide with added silicon dioxide. It is possible.

[0222] Also, for example, electrodes 4030 and 4031 are made of tungsten (W) and molybdenum ( Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) ), tantalum (Ta), palladium (Pd), chromium (Cr), cobalt (Co), nickel Ni (nickel), Titanium (Ti), Platinum (Pt), Aluminum (Al), Copper (Cu), Silver Using one or more metals such as (Ag), their alloys, or metal nitrides thereof, It is possible.

[0223] Also, for example, electrodes 4030 and 4031 may be conductive polymers ("conductive polymers"). It can be formed using a conductive composition containing a conductive polymer and For this purpose, so-called π-electron conjugated conductive polymers can be used. For example, polyaniline Polypyrrole or its derivatives, polythiophene or its derivatives A derivative, or a copolymer consisting of two or more of aniline, pyrrole, and thiophene. Examples include its derivatives.

[0224] When the light-emitting element 360 has a top emission structure, the electrode 4030 has a high light reflectivity. It is formed using a conductive material. Such materials include, for example, Al and Ag. Examples of materials include conductive materials with high light reflectivity and conductive materials with light transmittance. It may be laminated. Alternatively, the electrode 4031 may be formed from a light-transmitting conductive material. stomach.

[0225] Furthermore, if the light-emitting element 360 has a bottom emission structure, the electrode 4030 is made light-transmitting If the conductive material having the properties is formed, and the electrode 4031 is formed from a conductive material with high light reflectivity, good.

[0226] Furthermore, if the light-emitting element 360 is to have a dual emission structure, then electrode 4030 and electrode 4 031 can be formed from a light-transmitting conductive material.

[0227] In this embodiment, the light-emitting element 360 has a bottom emission structure.

[0228] Furthermore, the display device 110 shown in Figure 12(A) has an electrode 311 below the insulating layer 4102, and an insulating layer Layer 4101, electrode 4131, alignment film 4032, liquid crystal layer 4008, alignment film 4033, space SA 4035, electrode 4132, overcoat layer 4133, colored layer 4134, substrate 4001 It has a light-shielding layer 4135 and a polarizing plate 4136.

[0229] In the display device 110 shown in Figure 12(A), the electrode 4015 is an insulating layer 4101, and an insulating layer The electrode 4014 is electrically connected to the opening formed in layer 4102. Electrode 14 is formed simultaneously in the same process as electrode 4022.

[0230] The liquid crystal element 340 includes electrode 4131, electrode 4132, and liquid crystal layer 4008. Alignment films 4032 and 4033 are provided so as to sandwich the liquid crystal layer 4008. Electrodes 4131 and 4132 are superimposed on each other via the liquid crystal layer 4008. Also, electrodes 4131 has a region that overlaps with electrode 311. Also, electrode 4131 overlaps with electrode 4022 and And electrically connected to either the source or drain of transistor 4011 via electrode 311 The process continues. Electrode 311 has the function of reflecting visible light. Electrode 4022 is connected to electrode 402 It can be formed simultaneously using the same process as in step 1.

[0231] Furthermore, spacer 4035 is a columnar spacer obtained by selectively etching the insulating layer. It is provided to control the distance (cell gap) between electrode 4131 and electrode 4132. It is possible to use a spherical spacer as spacer 4035.

[0232] The display device 110 shown in Figure 12(A) is a light-emitting display device with a bottom emission structure. It has the function of a reflective liquid crystal display device. The light 45 generated by the light-emitting element 360 20 is emitted from the substrate 4001 side. Also, light 4521 incident from the substrate 4001 side The light is reflected by electrode 311 and emitted from the substrate 4001 side. Note that light 4521 is colored When light passes through layer 4134, a specific wavelength range is absorbed, resulting in a wavelength range different from that of light 4521. The light becomes 4522. However, the wavelength range of the incident light 4521 is transmitted through the colored layer 4134. If the wavelength range is inside that range, the wavelength range of light 4522 is almost the same as that of light 4521.

[0233] Light 4520 may be white light, or it may be light having a specific wavelength range. For example The light may have wavelengths such as red, green, or blue. Light 4520 is also colored layer 413 When light passes through 4, certain wavelength ranges may be absorbed.

[0234] The display device 110 shown in Figure 12(A) can be operated in three display modes. Mode 1 is a display mode in which images are displayed as a reflective liquid crystal display device. Mode 2 The first mode is a display mode in which an image is displayed as a light-emitting display device. The third mode is the first mode. This is a display mode that operates both the first and second modes simultaneously.

[0235] The first mode is an extremely low-power display mode because it does not require a light source. For example, This method is effective when the ambient light intensity is sufficiently high and the ambient light is white light or near white light. The first mode is a display mode suitable for displaying text information, such as books or documents. Yes. Furthermore, because it uses reflected light, it can provide a display that is easy on the eyes and reduces eye strain. This produces the following effect.

[0236] The second mode is extremely vivid (high contrast and) regardless of ambient light intensity and chromaticity. This is a display mode that can display images with high color reproduction. For example, at night or in a dark room. This is effective in situations where the ambient light intensity is extremely low. Also, when the ambient light intensity is low, Bright displays can sometimes cause glare for users. To prevent this, the second... In this mode, it is preferable to display with reduced brightness. This also reduces glare. In addition, power consumption can also be reduced. The second mode provides vivid images and smooth This mode is suitable for displaying videos and similar content.

[0237] The third mode utilizes both the reflected light from the first mode and the emitted light from the second mode. This is a display mode that displays by using reflected light from the first mode and the second mode. By mixing the light emitted by the LEDs, it is driven to express a single color. (First mode) It can display more vividly while consuming less power than the second mode. For example, when the illuminance of ambient light is relatively low, such as under indoor lighting, or during the morning or evening hours. This is effective when the chromaticity is not white. It also uses light that mixes reflected and emitted light. This makes it possible to display images that give the impression of looking at a painting. .

[0238] Furthermore, as shown in Figure 13, electrode 4015 and FPC4042 (FPC: Flexible The printed circuit is electrically connected via an anisotropic conductive layer 4041. That's fine.

[0239] Furthermore, as shown in Figure 14, the touch sensor 4137 is superimposed on the display area of ​​the display device 110. It is acceptable to provide this.

[0240] [substrate] There are no major restrictions on the materials used for substrates 4001 and 4006. Depending on the purpose, light transmission is possible. The decision should be made by considering factors such as whether or not it has properties and its heat resistance to withstand heat treatment. Glass substrates such as umborosilicate glass and aluminoborosilicate glass, ceramic substrates, A quartz substrate, a sapphire substrate, etc., can be used. Also, substrate 4001 and substrate 4 006 refers to semiconductor substrates, flexible substrates, laminated films, and base Materials such as film may be used.

[0241] For example, semiconductor substrates made of single-component materials such as silicon or germanium. Conductive substrate, or silicon carbide, silicon germanium, gallium arsenide, indium phosphide Examples include compound semiconductor substrates made from materials such as zinc oxide or gallium oxide. The semiconductor substrate may be a single-crystal semiconductor or a polycrystalline semiconductor.

[0242] Examples of materials for flexible substrates, laminated films, and base films include polyethylene. Lenterephthalate (PET), polyethylene naphthalate (PEN), polyethers Polyfluoroethylene (PES), polytetrafluoroethylene (PTFE), polypropylene, poly Esters, polyvinyl fluoride, polyvinyl chloride, polyolefins, polyamides (nylon) Polyimide, polycarbonate, aramid, epoxy resin, acrylic (including aramid) Resins and other materials can be used.

[0243] By using such a material as the substrate, a lightweight display device can be provided. In addition, by using such a material as the substrate, a display device with high impact resistance can be provided. In addition, by using such a material as the substrate, a display device that is difficult to be damaged can be provided. In addition, by using such a material as the substrate, a display device that is difficult to be damaged can be provided.

[0244] The flexible substrates used for the substrate 4001 and the substrate 4006 are preferably those with a lower linear expansion coefficient so that the deformation caused by the environment is suppressed. The flexible substrates used for the substrate 4001 and the substrate 4006, for example, may use a material with a linear expansion coefficient of 1×10 / K or less, 5×10 -3 / K or less, or 1×10 -5 / K or less. In particular, aramid is suitable as the flexible substrate -5 / because of its low linear expansion coefficient.

[0245] [Insulating layer] Insulating layers such as the insulating layer 4101, the insulating layer 4102, the insulating layer 4103, the insulating layer 4104, the insulating layer 4105, and the insulating layer 226 use materials selected from aluminum nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, magnesium oxide, silicon nitride, silicon oxide, silicon oxynitride, silicon nitride oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, aluminum silicate, etc., used singly or in a laminated form. Also, among oxide materials, nitride materials, oxynitride materials, and nitride oxide materials, a material in which a plurality of materials are mixed may be used.

[0246] ​In this specification, nitride oxides refer to compounds in which the nitrogen content is greater than the oxygen content. Furthermore, oxidized nitrides are compounds in which the oxygen content is higher than the nitrogen content. The content can be measured, for example, by the Rutherford backscattering method (RBS). Measurements can be taken using methods such as kscattering (spectrometry). .

[0247] In particular, insulating layers 4102 and 4104 use insulating materials that are resistant to the permeation of impurities. It is preferable to form a compound containing boron, carbon, nitrogen, oxygen, fluorine, magnesium, Aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium Insulating materials including luminous, zirconium, lanthanum, neodymium, hafnium, or tantalum, It can be used in a single layer or in a laminated form. For example, as an insulating material that is resistant to the permeation of impurities, Aluminum oxide, aluminum nitride, aluminum oxide nitride, aluminum oxide nitride, Gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide Examples include neodymium oxide, hafnium oxide, tantalum oxide, and silicon nitride. Furthermore, as insulating layer 4102 or insulating layer 4104, highly insulating indium tin oxide is used. Zinc (In-Sn-Zn oxide) may also be used.

[0248] By using an insulating material that is less permeable to impurities in the insulating layer 4102, from the insulating layer 4101 side... This suppresses the diffusion of impurities and improves the reliability of the transistor. Insulating layer 410 By using an insulating material that is less permeable to impurities in 4, impurities from the insulating layer 4105 side can be prevented. This can suppress diffusion and improve the reliability of transistors.

[0249] Furthermore, the insulating layer 4112 is an insulating layer having a flat surface. The insulating layer 4112 is: In addition to the above insulating materials, polyimide, acrylic resins, benzocyclobutene resins, Heat-resistant organic materials such as riamide and epoxy resins can be used. In addition to the organic materials mentioned above, we also use low-dielectric materials (low-k materials), siloxane resins, and PSG (phosphorus). Glass, BPSG (limboron glass), etc. can be used. Multiple insulating layers formed by this material may be stacked.

[0250] Siloxane-based resins are formed using siloxane-based materials as starting materials. This corresponds to a resin containing Si bonds. Siloxane resins use organic groups (for example, aluminum) as substituents. You may also use chloroform groups (such as aryl groups) or fluoroform groups. Furthermore, the organic group may have a fluoroform group. It's okay to be there.

[0251] Furthermore, CMP treatment may be performed on the surface of the insulating layer, etc. By performing CMP treatment, This reduces surface irregularities in the sample, thereby improving the coverage of the insulating and conductive layers that are formed afterward. ru.

[0252] [Conductive layer] Electrode 4031, Electrode 4030, Electrode 4022, Electrode 4021, Electrode 4014, Electrode 311 , electrodes 223, 244a, 244b, 4131, and 4132, etc. Materials used to form the conductive layer include aluminum, chromium, copper, silver, gold, platinum, and tungsten. Tal, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium One metallic element selected from manganese, magnesium, zirconium, beryllium, etc. Materials containing the above can be used. In addition, polycrystalline silica containing impurity elements such as phosphorus High-electrical-conductivity semiconductors such as CON can be used. Alternatively, high-electrical-conductivity oxides can be used. Monocrystalline semiconductors or nitride semiconductors with high electrical conductivity may be used. Nickel silicide may also be used. You may also use silicides such as these. Multiple conductive layers formed from these materials are stacked. You may use it.

[0253] Furthermore, the conductive material used to form the conductive layer is indium tin oxide (ITO:Indiu m Tin Oxide), indium oxide containing tungsten oxide, tungsten oxide Indium zinc oxide containing titanium oxide, indium oxide containing titanium oxide, titanium oxide containing Indium tin oxide, indium zinc oxide, silicon-added indium tin oxide Which conductive materials containing oxygen, or conductive materials containing nitrogen such as titanium nitride and tantalum nitride are suitable? It can also be used. Furthermore, a combination of the aforementioned metal element-containing material and an oxygen-containing conductive material can be used. It is also possible to create a layered structure by combining materials containing the aforementioned metal elements with nitrogen. It is also possible to create a laminated structure by combining conductive materials that include the aforementioned metal elements. A laminated structure combining a material containing oxygen, a conductive material containing oxygen, and a conductive material containing nitrogen. It can also be done this way.

[0254] In the display device 110 shown in Figure 12(A), the electrodes 311 are made of a conductive material with high light reflectivity. The electrodes 4030, 4131, and 4132 are made of a light-transmitting conductive material. To form.

[0255] [Semiconductor layer] The semiconductor layer 242 is formed using amorphous semiconductors, microcrystalline semiconductors, polycrystalline semiconductors, etc. This is possible. For example, amorphous silicon or microcrystalline germanium can be used. Furthermore, silicon carbide, gallium arsenide, oxide semiconductors (a type of metal oxide), and nitride semiconductors are all examples of these materials. Compound semiconductors such as those mentioned above, and organic semiconductors can be used.

[0256] In particular, it is preferable to use an oxide semiconductor, which is a type of metal oxide, as the semiconductor layer 242. The band gap of the oxide semiconductor is 2 eV or more, so the oxide semiconductor is present in semiconductor layer 242. By using this method, it is possible to realize a transistor with extremely low off-current. Therefore, The retention time of electrical signals such as image signals can be extended, and the writing interval when the power is on It can also be set for a longer period. Therefore, the frequency of refresh operations can be reduced, It has the effect of reducing power consumption.

[0257] Furthermore, the semiconductor layer in which the channel is formed uses an oxide semiconductor, which is a type of metal oxide. A transistor (also called an "OS transistor") has a high dielectric strength between its source and drain. Therefore, it is possible to provide a transistor with good reliability. In addition, it has a large output voltage and high voltage resistance. We can provide transistors. We can also provide reliable semiconductor devices, etc. This makes it possible to provide semiconductor devices with a large output voltage and high voltage resistance.

[0258] Furthermore, OS transistors can achieve relatively high field-effect mobility, enabling high-speed operation. Therefore, by using OS transistors in the pixel section of the display device, high-quality images can be produced. It can be provided. In addition, by using OS transistors, the drive circuit can be placed on the same board. This allows for the separate manufacturing of the main unit and the pixel unit, thereby reducing the number of components in the display device. It is possible.

[0259] Generally, the capacitance of a capacitive element in a display device is determined by the capacitance of the transistors arranged in the pixel area. The capacitance element is set to retain charge for a predetermined period, taking into account the current and other factors. The capacitance should be set considering the transistor's off-current, etc.

[0260] For example, by using OS transistors in the pixel section of a display device, the capacitance of the capacitive element can be reduced. It can be reduced. Also, by using OS transistors in the pixel section of the display device, The formation of capacitive elements can also be omitted.

[0261] [Overcoat layer] Examples of the overcoat layer 4133 include acrylic resin, epoxy resin, polyimide, etc. An organic insulating layer can be used. By forming the overcoat layer 4133 For example, to diffuse impurities contained in the colored layer 4134 into transistors, display elements, etc. This can suppress the occurrence of [unclear]. However, the overcoat layer 4133 is not necessarily provided. It is not necessary, and the structure may not form an overcoat layer 4133.

[0262] [Colored layer] Materials that can be used for the colored layer include metal materials, resin materials, pigments, or dyes. Examples include resin materials.

[0263] [Light blocking layer] Materials that can be used as a light-shielding layer include carbon black, titanium black, and gold. Examples include metal oxides, metal oxides, and composite oxides containing solid solutions of multiple metal oxides. The light-shielding layer is It may be a film containing a resin material, or a thin film of an inorganic material such as a metal. Furthermore, a laminated film containing the material of the colored layer can be used as the light-shielding layer. For example, a light of a certain color A film containing a material used for a colored layer that transmits light, and a material used for a colored layer that transmits light of other colors. A laminated structure with a film containing the material can be used. By using the same material for the colored layer and the light-shielding layer, This is preferable because it allows for the standardization of equipment and simplifies the process.

[0264] [Regarding film deposition methods] Insulating layers, conductive layers for forming electrodes and wiring, or semiconductor layers are formed by sputtering. Spin coating method, CVD (Chemical Vapor Deposition) method (Thermal CVD method, MOCVD (Metal Organic Chemical Vapo r Deposition) method, PECVD (Plasma Enhanced CVD) ) method, High-density plasma CVD method, LPCVD method (low pressure CVD), APCVD method (atmosphere Including ric pressure CVD, etc., ALD (Atomic Layer Deposition method, or MBE (Molecular Beam Epitolite) method. axy) method, or PLD (Pulsed Laser Deposition) method, Dip method, spray coating method, droplet ejection method (inkjet method, etc.), printing method (screen It can be formed using methods such as 3D printing and offset printing.

[0265] Plasma CVD can produce high-quality films at relatively low temperatures. (MOCVD, ALD, etc.) Alternatively, if a film deposition method that does not use plasma during film formation, such as thermal CVD, is used, dust will be deposited on the surface of the film. It is less likely to cause damage. For example, wiring, electrodes, and elements (transistors) included in semiconductor devices. Capacitive elements, etc., can be charged up by receiving electric charge from the plasma. At this time, the accumulated charge can damage the wiring, electrodes, and elements contained in the semiconductor device. It can be damaged. On the other hand, in the case of film deposition methods that do not use plasma, such plasma dust Because no damage occurs, the yield of semiconductor devices can be increased. Also, during film deposition... Because plasma damage does not occur, a film with fewer defects can be obtained.

[0266] CVD and ALD are film deposition methods in which particles emitted from a target or other source are deposited. In contrast, this is a film formation method in which a film is formed by a reaction on the surface of the object being treated. This film formation method is less affected by the shape of the workpiece and has good step-level coverage. The ALD method has excellent step coverage and excellent thickness uniformity, so the aspect ratio It is suitable for coating surfaces with high apertures. However, the ALD method has a relatively slow film deposition rate. Because the deposition rate is slow, it is not suitable for use in combination with other film deposition methods that have a high deposition rate, such as CVD. It can be preferable in some cases.

[0267] The CVD and ALD methods allow control of the composition of the resulting film by adjusting the flow rate ratio of the source gas. This is possible. For example, in the CVD method and ALD method, the flow rate ratio of the raw material gas can be adjusted to any A film of a certain composition can be formed. Also, for example, in the CVD method and ALD method, the film is formed. By changing the flow rate ratio of the raw material gas, a film with a continuously changing composition is formed. This is possible. When forming a film while changing the flow rate ratio of the raw material gas, multiple deposition chambers can be used. Compared to the method used for film deposition, the time required for film deposition is reduced by eliminating the time spent on transport and pressure adjustment. This is possible. Therefore, it may be possible to increase the productivity of semiconductor devices.

[0268] When depositing films using the ALD method, use a gas that does not contain chlorine as the material gas. It is preferable.

[0269] Furthermore, when forming a metal oxide layer by sputtering, the sputtering apparatus The chamber is cryopreserved to remove as much water and other impurities as possible from the metal oxide layer. Using an adsorption-type vacuum pump like a sump, achieve a high vacuum (5 × 10 -7 Pa to 1 × 10 -4 It is preferable to exhaust the air to approximately Pa. In particular, when the sputtering device is in standby mode... The gas molecules equivalent to H2O in the chamber (gas molecules equivalent to m / z=18) Partial pressure 1 × 10 -4 Pa or less, preferably 5 × 10 -5 It is preferable to keep it below Pa. The membrane temperature is preferably between RT and 500°C, more preferably between RT and 300°C, and RT A temperature of 200°C or lower is even more preferable.

[0270] Furthermore, it is necessary to increase the purity of the sputtering gas. For example, as The oxygen gas or argon gas used has a dew point of -40°C or lower, preferably -80°C or lower. Preferably, a gas purified to -100°C or lower, more preferably to -120°C or lower, is used. This prevents moisture and other substances from being absorbed into the metal oxide layer as much as possible.

[0271] Furthermore, when forming insulating layers, conductive layers, or semiconductor layers using the sputtering method, oxygen is used. By using a sputtering gas containing oxygen, oxygen can be supplied to the layer being formed. The higher the oxygen content in the tarring gas, the more oxygen is likely to be supplied to the cambium. .

[0272] <Example 1> As a modified example of the display device 110, Figure 15 shows a cross-sectional view of the display device 110a. To prevent repetition, we will mainly explain the differences from the display device 110.

[0273] The display device 110a has a colored layer 4134e in the region overlapping with the light-emitting element 360. Figure 15 So, the colored layer 4134e is provided between the insulating layer 4105 and the insulating layer 4112, but the colored layer Layer 4134e may be placed on any layer. Furthermore, multiple layers of the colored layer 4134e may be stacked. good.

[0274] Furthermore, in the display device 110a, a colored layer 4134 is provided in the region that overlaps with the light-emitting element 360. not present.

[0275] In the display device 110 shown in Figure 12(A), the light 4520 emitted by the light-emitting element 360 is The light passes through the color layer 4134 only once. Also, the light 4521 incident on the liquid crystal element 340 is the color layer After passing through 4134, it is reflected by electrode 311 and passes through the colored layer 4134 again. The light 4520 emitted by the light-emitting element 360 and the light 4521 reflected by the liquid crystal element 340 are, Each requires passing through the colored layer a different number of times. Therefore, both the transmission mode and the reflection mode are displayed. It is difficult to further enhance the level of dignity.

[0276] In the display device 110a, the colored layer 4134e functions as a colored layer for the light-emitting element 360. Furthermore, in the display device 110a, the colored layer 4134 functions as a colored layer for the liquid crystal element 340. To make someone do it.

[0277] Therefore, the colored layer 4134e can be designed as the optimal colored layer for the light-emitting element 360. Therefore, it is possible to improve color reproduction in transparency mode. Similarly, the colored layer 4 134 can be designed as the optimal coloring layer for the liquid crystal element 340. Therefore, reflective mode This can improve color reproduction in the code. Colored layer 4134 and colored layer 4134e By providing this feature, the display quality of the display device can be improved.

[0278] Furthermore, a colored layer 4134 is provided in the region overlapping with the light-emitting element 360, superimposed on the colored layer 4134e. That's fine.

[0279] Furthermore, as shown in Figure 16, it is not necessary to provide a colored layer 4134 in the region that overlaps with the light-emitting element 360. This is also fine. For example, a light-emitting element 360 that emits red light, a light-emitting element 360 that emits green light, and By using a light-emitting element 360 that emits blue light, the colored layer 4134 can be omitted. can.

[0280] <Modification 2> As a modified example of the display device 110, Figure 17(A) shows a cross-sectional view of the display device 110b. To avoid repetition of explanations, we will mainly explain the differences from the display device 110.

[0281] Figures 12(A) and (B) show that a top-gate transistor was applied to the display device. This illustrates a particular case. However, the structure of the transistor used in the display device according to one aspect of the present invention is particularly It is not limited to this. For example, it may be a planar transistor or a staggered transistor. It can be a zista, or an inverse staggered transistor. It can also be a top-gate type. Alternatively, any bottom-gate type transistor structure may be used. You may use them in combination.

[0282] The display device 110 shown in Figure 12(A) is a top-gate type transistor 4010, It has a zista 4011 and a transistor 4012. The display device shown in Figure 17(A) Placement 110b consists of top-gate type transistors 4010, 4011, and Instead of transistor 4012, use bottom-gate type transistor 4010a, transistor It has a 4011a and a 4012a transistor.

[0283] Figure 17(B) shows a cross-sectional view of transistor 4010a. Transistors 4012a and 4010a have similar configurations. , comprising electrode 246, electrode 244a, electrode 244b, electrode 223, and semiconductor layer 242 The electrode 223 is formed on the insulating layer 4102, and the insulating layer 4103 is formed on the electrode 223. The semiconductor layer 242 is formed on the insulating layer 4103. Electrodes 244a and Electrode 244b is formed on semiconductor layer 242 and insulating layer 4103. Electrode 244a It has a region that is in contact with a part of the semiconductor layer 242. The electrode 244b is in contact with the semiconductor layer 242 as well It has a region that is in contact with a part of it. On semiconductor layer 242, electrode 244a, and electrode 244b An insulating layer 4105 is formed. Furthermore, an electrode 246 is formed on the insulating layer 4105. Furthermore, an insulating layer 4104 is formed on the insulating layer 4105 and the electrode 246.

[0284] The electrode 223 and the semiconductor layer 242 have overlapping regions with respect to the insulating layer 4103. The electrode 246 and the semiconductor layer 242 have overlapping regions with respect to the insulating layer 4105. As mentioned above, both electrode 246 and electrode 223 can function as gate electrodes. Therefore, both insulating layer 4103 and insulating layer 4105 can function as gate insulating layers. ru.

[0285] Furthermore, the bottom-gate type transistors 4010a to (as shown in Figures 17(A) and (B)) In the transistor 4012a, electrode 223 overlaps with electrode 244 when viewed in a plan view. The region in the semiconductor layer 242 sandwiched between a and electrode 244b functions as a channel formation region. do.

[0286] The electrode 246 may be provided on the insulating layer 4104. Depending on the purpose or application, It is not necessary to provide electrode 246.

[0287] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0288] (Embodiment 3) In this embodiment, a modified example of the display device 110 will be described with reference to the drawings. Display device 1 Similar to the display device 110, 50 also has display area 111, display area 112, display area 113, and It has a curved region 114 and a bent region 115. Note that, in order to avoid repetition of the explanation, this is a real object. In terms of the configuration of the device, we will mainly explain the differences from the display device 110. Figure 18 shows the display device 1 Figure 19 is a plan view of the display device 150, which is a modified example of Figure 10. This is a block diagram explaining the concept.

[0289] Display device 150 differs from display device 110 in that it does not have input terminals 122 and 123. This is different. In addition, the display device 150 has meander-like properties in the bent region 114 and the bent region 115. It has wiring 245. The wiring 245 provided in the bending region 114 is connected to the display region 111 and the display region 111. The display area 112 is electrically connected. For example, the wiring 235 in the display area 111 and the display area The wiring 235 in 112 is electrically connected via wiring 245. Also, the bending region 115 The wiring 245 provided there electrically connects the display area 111 and the display area 113. Then, the wiring 235 in display area 111 and the wiring 235 in display area 113, and the wiring 245 They are electrically connected via an intermediary.

[0290] Display area 111, display area 112, and display area 113 are electrically connected by wiring 245. By doing so, display area 111, display area 112, and display area 113 are combined into a single display area It can function as a region. Therefore, circuits 232a, 232b, and 2 Of the 32c, for example, using only circuit 232b, display area 111, display area 112, The display area 113 can be driven. Also, circuits 233a, 233b, and Of the circuits 233c, for example, using only circuit 233a, display area 111, display area 11 2, and the display area 113 can be driven.

[0291] In this way, using wiring 245, display area 111 and display area 112, and the table By electrically connecting the display area 111 and the display area 113, the configuration of the drive circuit section is This simplifies the design and reduces the area occupied by the drive circuit. It also reduces the number of input terminals. This is possible. For example, in the display device 150, compared to the display device 110, the input terminal 122 is The input terminals 123 have been reduced.

[0292] Figure 20 shows the display device 150 in an oblique position, bent at the bending region 114 and bending region 115. A visual view is shown. The wiring 245 provided in the bending region 114 and bending region 115 is meander-shaped and This reduces the likelihood of breakage due to bending. This prevents malfunctions and decreased reliability. Furthermore, it reduces the radius of curvature R of the bent section. Even if this is done, malfunctions and unreliability of the display device 150 due to short circuits or open circuits in the wiring or electrodes may occur. This reduces the likelihood of degradation and other issues. Specifically, the radius of curvature R can be reduced to 1 mm or less. Alternatively, the radius of curvature R can be 0.5 mm or less. It can be less than or equal to mm.

[0293] Note that wiring 245 can be made into various shapes. For example, wiring 245 can be made into a triangular wave It may also be made to meander (see Figure 21(A)). Alternatively, wiring 245 may be made to behave like a sine wave. It may be made to meander (see Figure 21(B)). Alternatively, wiring 245 may be made to meander in an arc. (See Figure 21(C).) Alternatively, the wiring 245 may be made to meander using a combination of straight lines. See Figure 21(D). Alternatively, wiring 245 may be made to meander by combining straight and curved lines. (See Figure 21(E).) Also, as shown in Figure 21(F) or Figure 21(G), wiring 245 It may also be in the form of a chain.

[0294] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0295] (Embodiment 4) In this embodiment, the display device 110a and the display device 150 are modified versions of the display device 110. A modified display device 150a, and a modified display device 150 of display device 150a Regarding point b, we will explain using a drawing.

[0296] [Display device 110a, display device 150a] First, display devices 110a and 150a will be described. (See Figures 22 and 23) This is a plan view of display device 110a, which is a modified example of display device 110. Figure 24 is a plan view of display device This is a plan view of display device 150a, which is a modified example of the device 150. Display device 110a and display Device 150a, like display device 110 and display device 150, has a display area 111, display It has a region 112, a display region 113, a bending region 114, and a bending region 115. To avoid repetition of the explanation, the differences between display device 110 and / or display device 150 are as follows: I will mainly explain that.

[0297] Display devices 110a and 150a have meander-shaped wiring 235 in the display area 113. It has. Also, similar to the display area 113, the display area 112 also has meander-shaped wiring 235. (Not shown) Wiring 235 of display area 112 and display area 113, Wiring 24 Similar to 5, by making it meander-shaped or chain-shaped, display area 112 and display area 113 Even if the wire is bent or curved, it becomes less likely for the wiring 235 to break. This prevents malfunctions and reduced reliability caused by tangles, disconnections, and other issues.

[0298] Furthermore, not only wiring 235, but other wiring may also be meander-shaped or chain-shaped. For example, As shown in Figure 23, the display device 110a may have meander-shaped wiring for the 236.

[0299] Figure 26(A) shows the display area 112 and display area 113 of the display device 150a curved. A perspective view of the state is shown. Note that the display device 110a can also be made to have the same shape as in Figure 26(A). can.

[0300] [Display device 150b] Next, the display device 150b will be described. Figure 25 is a modified example of the display device 150a. This is a plan view of the display device 150b. Note that, to avoid repetition of the explanation, the display device 150a is shown. This section will primarily explain the differences between the two.

[0301] Display device 150b does not have a bent region 114 and a bent region 115, which is different from display device 15. It is different from 0a. Therefore, the display device 150b does not have wiring 245. In other words, display Device 150b has wiring 235 of display area 111 and wiring 235 of display area 112, wiring 2 It is connected without going through 45. Also, the display device 150b is connected to the wiring 23 of the display area 111. Wiring 235 of 5 and display area 113 is connected without going through wiring 245.

[0302] Since the display device 150b does not have a bending region 114 and a bending region 115, the display region 111 Display area 112 and display area 113 are perceived as a single continuous display area. Therefore, it is possible to display a seamless image from display area 111 to display area 113. can.

[0303] Figure 26(B) shows the curved display areas 112 and 113 of the display device 150b. A perspective view of the state is shown.

[0304] [Display device 150c] Next, the display device 150c will be described. Figure 27 shows a modified example of the display device 150b. This is a plan view of the display device 150c. Note that, to avoid repetition of the explanation, display device 150b is shown. This section will primarily explain the differences between the two.

[0305] Like the display device 150c, the wiring 235 of the display area 111 can also be meander-shaped or chain-shaped. Alternatively, the wiring 235 of display areas 111 to 113 may be made meander-shaped or chain-shaped. As a result, even if the display area 111 to the display area 113 is curved or bent, the wiring 23 This reduces the likelihood of disconnections in the circuit. Therefore, malfunctions and reliability issues caused by short circuits or disconnections are reduced. This can prevent a decline.

[0306] Figures 28(A) and 28(B) show the display area 111 to display area 1 of the display device 150c. A perspective view of 13 in a curved state is shown.

[0307] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0308] (Embodiment 5) In this embodiment, a light-emitting element 330 and a light-emitting element that can be used in the light-emitting element 360 An example of the configuration of 331 will be described. Note that the EL layer 320 shown in this embodiment may differ in other embodiments. This corresponds to the light-emitting layer 4511 shown in the diagram.

[0309] <Configuration of light-emitting elements> The light-emitting element 330 shown in Figure 29(A) has an EL between a pair of electrodes (electrode 318, electrode 322). It has a structure in which layer 320 is sandwiched. In the following description of this embodiment, Electrode 318 is used as the anode, and electrode 322 is used as the cathode.

[0310] Furthermore, the EL layer 320 only needs to include at least an emissive layer, and other than the emissive layer... It may be a laminated structure including a functional layer. As functional layers other than the light-emitting layer, layers containing substances with high hole injection properties, substances with high hole transport properties, substances with high electron transport properties, substances with high electron injection properties, ambipolar (substances with high electron and hole transport properties), etc. can be used. Specifically, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc. can be appropriately combined and used. Substances, substances with high hole transport properties, substances with high electron transport properties, substances with high electron injection properties, bipor Larity (substances with high electron and hole transport properties) substances, etc. can be used. Specifically, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc. can be appropriately combined and used. Combined and used.

[0311] In the light-emitting device 330 shown in Fig. 29(A), current flows due to the potential difference applied between the electrode 318 and the electrode 322, and holes and electrons recombine in the EL layer 320 to emit light. That is, it is configured such that a light-emitting region is formed in the EL layer 320.

[0312] In the present invention, the light emitted from the light-emitting device 330 is taken out to the outside from the side of the electrode 318 or the electrode 322. Therefore, either one of the electrode 318 or the electrode 322 is made of a light-transmissive substance.

[0313] Note that the EL layer 320 may be laminated in multiple layers between the electrode 318 and the electrode 322 as in the light-emitting device 331 shown in Fig. 29(B). When having an n-layer (n is a natural number of 2 or more) laminated structure, it is preferable to provide a charge generation layer 320a between the m-th (m is a natural number satisfying 1≦m<n) EL layer 320 and the (m + 1)-th EL layer 320.

[0314] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, etc. As the composite material of an organic compound and a metal oxide, for example, ​​​​​​​​​​For example, organic compounds and metal oxides such as vanadium oxide, molybdenum oxide, and tungsten oxide. It includes. Organic compounds include aromatic amine compounds, carbazole derivatives, and aromatic carbamides. Low molecular weight compounds such as elements, or oligomers, dendrimers, and polymers of these low molecular weight compounds. Various compounds such as Mer can be used. Furthermore, as organic compounds, those with hole transport properties can be used. As a compound, the hole mobility is 10 -6 cm 2 It is preferable to apply the value that is greater than or equal to / Vs. However, if the material has a higher hole transport rate than electron transport rates, then other materials can also be used. Good. Furthermore, these materials used in the charge generation layer 320a have carrier implantation properties and carrier transport properties. Due to its excellent transmission properties, it enables low-current and low-voltage driving of the light-emitting element 330. It is possible.

[0315] Furthermore, the charge generation layer 320a is a composite material of an organic compound and a metal oxide, combined with other materials. They may be formed together. For example, a layer containing a composite material of an organic compound and a metal oxide, and an electron A layer containing one compound selected from among the donating substances and a compound with high electron transport properties is combined. They may also be formed by combining them. Alternatively, a layer containing a composite material of an organic compound and a metal oxide, and a transparent conductive film. They may be formed by combining them.

[0316] A light-emitting element 331 having such a configuration may experience problems such as energy transfer and quenching. This makes it difficult to create light-emitting elements that combine high luminous efficiency and long lifespan by expanding the range of material choices. It is easy to do so. Furthermore, it is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. That is the case.

[0317] The charge generation layer 320a is a layer that generates charge when a voltage is applied to electrodes 318 and 322. It has the function of injecting holes into one of the EL layers 320 that is formed in contact with the generation layer 320a. It also has the function of injecting electrons into the other EL layer 320.

[0318] The light-emitting element 331 shown in Figure 29(B) can be modified by changing the type of light-emitting material used in the EL layer 320. This allows for obtaining various emission colors. In addition, multiple luminescent materials with different emission colors can be used. By using luminescent materials, it is also possible to obtain emission with a broad spectrum or white light emission. ru.

[0319] When obtaining white light emission using the light-emitting element 331 shown in Figure 29(B), a combination of multiple EL layers is used. The combination should be one that emits white light containing red, blue, and green light, for example. For example, a light-emitting layer containing a blue fluorescent material as a light-emitting substance, and a layer containing green and red phosphorescent materials as light-emitting substances. One example is a configuration having a light-emitting layer containing a red light-emitting layer and a green light-emitting layer. It can also be configured to have a light-emitting layer that emits light and a light-emitting layer that emits blue light. White light emission can be obtained even with a configuration that has a light-emitting layer that emits light of complementary colors. In a stacked element with two layers, the light emission color obtained from the light-emitting layer and the light emission from the other light-emitting layer If we want the colors of the light emitted from to be complementary colors, then the complementary colors would be blue and yellow. Alternatively, colors such as blue-green and red could be mentioned.

[0320] Furthermore, in the configuration of the stacked element described above, a charge generation layer is placed between the stacked light-emitting layers. By doing so, it is possible to achieve long-life elements in the high-brightness region while keeping the current density low. Yes, it is possible. Furthermore, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0321] Furthermore, the light-emitting element 330 and / or light-emitting element 331 share the light emitted from the EL layer 320. By creating a vibrating micro-optical resonator (also called a "microcavity") structure, different emission can be achieved. Even when using the same EL layer 320 in the optical element 331, it is possible to narrow and extract light in different wavelength ranges. It is possible.

[0322] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0323] (Embodiment 6) This embodiment describes oxide semiconductors, which are a type of metal oxide. The body preferably contains indium or zinc. In particular, it contains indium and zinc. This is preferable. In addition to those, element M (where M is aluminum, gallium, and yt) Rium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Manium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Ta Contains one or more elements selected from tungsten, magnesium, etc. It's okay if they're born.

[0324] Oxide semiconductors, a type of metal oxide, include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. They can be divided into oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS. (c-axis aligned crystalline oxide semico nductor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline) Oxide semiconductor, pseudo-amorphous oxide semiconductor (a-like OS:amorphous-like oxide semiconductor) Examples include amorphous oxide semiconductors.

[0325] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. Furthermore, it has a distorted crystal structure. Note that distortion refers to the region where multiple nanocrystals are connected. Within the region, between a region with aligned lattice arrangements and another region with aligned lattice arrangements, This refers to the part where the direction has changed.

[0326] Nanocrystals are based on a hexagonal structure, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. Yes, it exists. Furthermore, the distortion may have a grid arrangement such as a pentagon or heptagon. Furthermore, in CAAC-OS, even near strain, clear grain boundaries (grain bounds) are present. It is not possible to confirm the grain boundaries (also known as dally). In other words, due to the distortion of the lattice arrangement, the grain boundaries It can be seen that the formation is suppressed. This is because CAAC-OS is in the ab plane direction The arrangement of oxygen atoms is not dense, and the bond distance between atoms changes due to the substitution of metal elements. This is thought to be because distortion can be tolerated by processes such as transformation.

[0327] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and elements A layered crystalline structure in which layers containing M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a layered structure (also called a structure). Furthermore, indium and element M are substituted for each other. It is possible, and if element M in the (M,Zn) layer is replaced with indium, then (In,M,Zn) It can also be represented as a layer. Furthermore, if the indium in the In layer is substituted with element M, then (In,M It can also be represented as a layer.

[0328] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. Furthermore, nc-OS has different nanometers. No regularity in crystal orientation is observed between crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analysis method, nc-OS can be classified as a-like OS or amorphous oxide semiconductor. It can sometimes be difficult to distinguish between them.

[0329] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0330] Oxide semiconductors, a type of metal oxide, can take on diverse structures, each possessing different properties. The oxide semiconductor that can be used in one aspect of the present invention is an amorphous oxide semiconductor, multi-layered Two or more of the following: crystalline oxide semiconductors, a-like OS, nc-OS, CAAC-OS It may have it. It may also have CAC-OS.

[0331] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0332] (Embodiment 7) This embodiment describes an example of an electronic device using a display device according to one aspect of the present invention. do.

[0333] Electronic devices using a display device according to one aspect of the present invention include display devices such as televisions and monitors. Lighting fixtures, desktop or notebook personal computers, word processors It is stored on recording media such as DVDs (Digital Versatile Discs). Image playback devices that play still images or videos, portable CD players, radios, tape recorders Coda, headphone stereo, stereo, desk clock, wall clock, cordless phone handset, Transceivers, car phones, mobile phones, personal digital assistants, tablet devices, portable games Pachinko machines and other fixed game machines, calculators, electronic organizers, e-books, electronic translators, voice input High-frequency processing equipment such as power tools, video cameras, digital still cameras, electric shavers, and microwave ovens. Heating devices, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, electric fans, hair dryers, air conditioners Air conditioning equipment such as conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, and clothes dryers. Bedding dryer, electric refrigerator, electric freezer, electric refrigerator-freezer, DNA storage freezer, flashlight Examples include tools such as chainsaws, smoke detectors, and medical equipment such as dialysis machines. Furthermore, Emergency lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage Examples include storage systems, power leveling systems, and energy storage devices for smart grids. Furthermore, mobile vehicles are propelled by engines that use fuel or electric motors that use electricity from energy storage devices. Moving objects can also sometimes be included in the category of electronic devices. For example, an electric vehicle is one such moving object. Electric vehicles (EVs), hybrid electric vehicles (HEVs) that combine an internal combustion engine and an electric motor, plug-in hybrid vehicles Hybrid vehicles (PHEV), tracked vehicles that replace these tires and wheels with tracks, electric assist vehicles Motorized bicycles including street bikes, motorcycles, electric wheelchairs, golf carts, small or Large ships, submarines, helicopters, aircraft, rockets, satellites, space probes and planetary exploration vehicles. Examples include aircraft and spacecraft.

[0334] The electronic device shown in this embodiment can be equipped with the display device and the like described above.

[0335] As an example of an electronic device, Figures 30(A), (B), (C), and (D) show electronic device 31 A perspective view of 00 is shown. Figure 30(E) shows the area indicated by the dashed line A1-A2 in Figure 30(A). A cross-sectional view is shown. Figures 30(C) and (D) show the electronic device 3100 folded in half. This is shown. Figure 30(A) shows the electronic device 3100 in the open state. Figure 30(B ) indicates the state of the electronic device 3100 during the opening and closing process.

[0336] The electronic device 3100 consists of a housing 3101, a housing 3102, a hinge part 3103, and a cover material 310. 4. Display device 3110, circuit board 3160, battery 3170a, and battery 317 It has 0b, etc. The circuit board 3160 has a central processing unit, memory, and display control unit. Devices and the like are installed. In addition, other semiconductor devices are installed in area 3151 within the housing 3101. A heat dissipation component and an electromagnetic wave absorber or shielder may be provided in region 3151. Functional components, such as members and / or members that shield against magnetism, may be provided.

[0337] The housing 3101 and housing 3102 are connected by a hinge portion 3103. 3101 and the housing 3102 can rotate relative to each other around the axis of the hinge portion 3103. ru.

[0338] Furthermore, the display device 3110 has a display area 3111 that overlaps with the housing 3101, and housing 3102. It has an overlapping display area 3112. The display device 3110 also has an overlapping display area 3111. Between regions 3112, there is a bending region (not shown). The cover material 3104 is located in the display region 3 It has an area that overlaps with 111 and an area that overlaps with the display area 3112. Also, cover material 3 104 has the function of transmitting visible light.

[0339] The electronic device 3100 may be equipped with a touch sensor or the like as an input device. The 3100 may be equipped with a camera, microphone, speaker, and communication device, etc. Display device As 3110, the display device shown in the above embodiment can be used.

[0340] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case. [Explanation of Symbols]

[0341] 100 Electronic equipment 101 cabinets 102 Audio output device 103 Operation switch 104 Voice input device 105 Imaging device 110 Display device 111 Display area 112 Display area 113 Display area 114 Bend area 115 Bend area 121 Input terminals 122 Input Terminals 123 Input terminals 131 Touch Sensor 132 Touch Sensor Controller 141 Bus Line 150 Display device 151 areas 160 Circuit Boards 161 Arithmetic equipment 162 Communication equipment 163 Storage device 164 Display Unit Control Device 165 Attitude detection unit 166 Vibration device 167 Sensor Module 168 External Interfaces 169 Sound Controller 170 batteries 171 Battery Controller 172 Power receiving section 180 antenna 223 Electrode 225 Display elements 226 Insulating layer 230 pixels 235 Wiring 236 Wiring 237 Pixel Circuit 242 Semiconductor layer 245 Wiring 246 Electrode 311 Electrode 318 Electrode 320 EL layer 322 electrode 330 light-emitting elements 331 Light-emitting element 340 LCD buttons 360 light-emitting elements

Claims

[Claim 1] It has a first display area, a second display area, and a first area, The first display area and the second display area are adjacent to each other via the first area. The first display area has a first wiring, The first wiring is meander-shaped, and the device is a display device.

Images