Semiconductor manufacturing equipment and method for manufacturing semiconductor devices

Abstract

The objective is to provide a technology that can suppress vibrations in the outer periphery of semiconductor wafers. [Solution] The semiconductor manufacturing apparatus includes a chuck table having a porous chuck for adsorbing the surface protective layer of a semiconductor wafer. The chuck table is provided with multiple outlets for discharging water to the outer periphery of the semiconductor wafer, each partially covered by the adsorbed surface protective layer. The area of ​​the outlets not covered by the adsorbed surface protective layer is larger than the area of ​​the outlets covered by the surface protective layer.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device.

Background Art

[0002] Regarding wafer grinding apparatuses that adsorb (fix) a semiconductor wafer to a porous chuck by sucking air in the pores (porous members) of the porous chuck during grinding of the back surface of the semiconductor wafer, various techniques have been proposed. For example, Patent Document 1 proposes a configuration in which pure water is discharged from a chuck table to the outer peripheral portion of the porous chuck, that is, to the outer peripheral portion of the semiconductor wafer. According to such a configuration, since a pure water film is formed between the lower portion of the outer peripheral portion of the semiconductor wafer and the wafer holder, it becomes possible to suppress the adverse effects on the porous chuck by the abrasive slurry and grinding debris.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in a configuration such as that of Patent Document 1, there are problems such that the outer peripheral portion of the semiconductor wafer vibrates due to the pure water discharged to the outer peripheral portion of the semiconductor wafer during grinding, and the outer peripheral portion comes into contact with the grindstone and chips off.

[0005] Therefore, the present disclosure has been made in view of the above problems, and an object thereof is to provide a technique capable of suppressing vibration of the outer peripheral portion of a semiconductor wafer.

Means for Solving the Problems

[0006] The semiconductor manufacturing apparatus according to this disclosure comprises a chuck table having a porous chuck for adsorbing a surface protection layer provided on a first surface of a semiconductor wafer, and a spindle having a grinding wheel for grinding a second surface of the semiconductor wafer opposite to the first surface on which the surface protection layer is adsorbed. Each of these comprises a plurality of outlets for discharging water to the outer periphery of the semiconductor wafer, while being partially covered by the adsorbed surface protection layer, provided on the chuck table along the circumferential direction of a circle surrounding the porous chuck in a plan view, wherein the area of ​​the outlets not covered by the adsorbed surface protection layer is larger than the area of ​​the outlets covered by the surface protection layer. [Effects of the Invention]

[0007] According to this disclosure, the area of ​​the outlet not covered by the adsorbed surface protective layer is larger than the area of ​​the outlet covered by the surface protective layer. With this configuration, vibrations of the outer periphery of the semiconductor wafer can be suppressed. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view showing the configuration of a wafer grinding apparatus according to Embodiment 1. [Figure 2] This is a plan view showing the configuration of the chuck table according to Embodiment 1. [Figure 3] This is a perspective view showing a part of the configuration of the chuck table according to Embodiment 1. [Figure 4] This is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to Embodiment 1. [Figure 5] This is a flowchart showing the operation of the wafer grinding apparatus according to Embodiment 1. [Figure 6] This is a plan view showing the configuration of a chuck table according to Modification 1. [Figure 7] This is a cross-sectional view showing the configuration of a wafer grinding apparatus according to modified example 1. [Figure 8] This is a plan view showing the configuration of a chuck table according to Modification 1. [Figure 9]This is a cross-sectional view showing a part of the configuration of a chuck table according to Modification Example 1. [Figure 10] This is a cross-sectional view showing a part of the configuration of a chuck table according to Modification Example 1. [Figure 11] This is a plan view showing the configuration of the chuck table according to the modified example 2. [Figure 12] This is a plan view showing the configuration of the chuck table according to the modified example 2. [Figure 13] This is a perspective view showing a part of the configuration of the chuck table according to Modification 3. [Figure 14] This is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to Embodiment 2. [Figure 15] This is a plan view showing the configuration of the chuck table according to Embodiment 3. [Figure 16] This is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to Embodiment 4. [Figure 17] This is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to Embodiment 5. [Modes for carrying out the invention]

[0009] The embodiments will be described below with reference to the attached drawings. The features described in each of the embodiments below are illustrative, and not all features are necessarily required. In addition, in the descriptions below, the same or similar reference numerals are used for similar components in multiple embodiments, and the different components are mainly described. Also, in the descriptions below, specific positions and directions such as "top," "bottom," "left," "right," "front," or "back" do not necessarily have to coincide with the positions and directions in actual implementation.

[0010] <Embodiment 1> FIG. 1 is a cross-sectional view showing the configuration of a wafer grinding apparatus, which is a semiconductor manufacturing apparatus according to Embodiment 1. The wafer grinding apparatus in FIG. 1 includes a chuck table 3, a flow regulator 6, a water supply source 7, a bubbling mechanism 9, a suction mechanism 11, and a spindle 17. FIG. 2 is a plan view showing the configuration of the chuck table 3, FIG. 3 is a perspective view showing a partial configuration of the chuck table 3, and FIG. 4 is an enlarged cross-sectional view of a part of FIG. 1.

[0011] FIG. 1 also shows the configuration of the semiconductor wafer 1 to be ground by the wafer grinding apparatus. A surface protection layer 2 is provided on the front surface (the lower surface in FIG. 1), which is the first surface of the semiconductor wafer 1. For example, a protective tape or the like is used for the surface protection layer 2.

[0012] The semiconductor wafer 1 may be composed of ordinary silicon (Si), or may be composed of a wide-bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), or diamond. When the semiconductor wafer 1 is composed of a wide-bandgap semiconductor, for the semiconductor device manufactured from the semiconductor wafer 1, stable operation at high temperatures and high voltages, and an increase in the switching speed are possible. The semiconductor device includes, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), an RC-IGBT (Reverse Conducting - IGBT), an SBD (Schottky Barrier Diode), and a PND (PN junction diode).

[0013] Next, the components of the wafer grinding apparatus according to Embodiment 1 will be described in detail. In this wafer grinding apparatus, water is used, and this water may be pure water.

[0014] As shown in Figure 1, the chuck table 3 has a porous chuck 4 made of a porous material. When the surface protection layer 2 is placed on the porous chuck 4, the adsorption mechanism 11 sucks in air or other substances from inside the porous chuck 4, causing the surface protection layer 2 to be adsorbed (fixed) to the porous chuck 4. In this embodiment 1, the central part of the adsorption surface 3a of the chuck table 3 corresponds to the adsorption surface of the porous chuck 4. When the bubbling mechanism 9 discharges water and air into the porous chuck 4, water bubbles that can clean the adsorption surface 3a of the chuck table 3 are formed on the porous chuck 4.

[0015] The spindle 17 is located above the chuck table 3. The spindle 17 has a grinding wheel 18 for grinding the back surface (upper surface in Figure 1), which is the second surface opposite to the first surface of the semiconductor wafer 1 on which the surface protection layer 2 is adsorbed by the porous chuck 4.

[0016] The chuck table 3 is provided with a water passage 5. This water passage 5 has a water supply port provided on the bottom surface of the chuck table 3 and a plurality of water outlets (outlets) 5a provided on the top surface (suction surface 3a) of the chuck table 3. As shown in Figures 2 and 3, the plurality of water outlets 5a are provided on the chuck table 3 along the circumferential direction of the circle surrounding the porous chuck 4 in a plan view. It is preferable that the spacing between the plurality of water outlets 5a is equal, but they may be slightly different.

[0017] As shown in Figure 4, the water supply source 7 supplies water to the water supply port on the bottom of the chuck table 3, causing the water 13a to reach each of the multiple water outlets 5a. Each of the multiple water outlets 5a discharges water 13a to the outer periphery of the semiconductor wafer 1, while being partially covered by the surface protection layer 2 adsorbed on the porous chuck 4. If the shape of the water outlets 5a is circular or otherwise without recesses, there will be approximately two intersection points between the outline of one water outlet 5a partially covered by the surface protection layer 2 and the outline of the surface protection layer 2.

[0018] When multiple water outlets 5a, which are not completely covered by the surface protective layer 2, discharge water 13a to the outer periphery of the semiconductor wafer 1, the water 13a becomes water 13b that travels through the gap between the outer periphery of the semiconductor wafer 1 and the chuck table 3 to the outside of the chuck table 3. As a result, grinding debris 14 generated by grinding the back surface (top surface in Figure 4) of the semiconductor wafer 1 is moved to the outer periphery of the chuck table 3 by the water 13b. The grinding debris 14 that has moved to the outer periphery of the chuck table 3 is blown to the outside of the chuck table 3 by the centrifugal force generated by the rotation of the chuck table 3 during grinding.

[0019] Furthermore, for one or more water outlets 5a, the area of ​​the water outlet 5a not covered by the surface protection layer 2 adsorbed on the porous chuck 4 is larger than the area of ​​the water outlet 5a covered by the surface protection layer 2. With this configuration, it is possible to suppress vibration of the outer periphery of the semiconductor wafer 1 caused by the water 13a discharged to the outer periphery of the wafer.

[0020] The flow regulator 6 adjusts the flow rate of water supplied from the water supply source 7 to the water supply port of the chuck table 3. This adjustment allows for balancing the flow velocity (force) of the water 13b that moves the grinding chips 14 to the outer periphery of the chuck table 3 with the suppression of vibrations on the outer periphery of the semiconductor wafer 1. However, even with such adjustments, if, for example, multiple water outlets 5a are completely covered by the surface protection layer 2, it is not possible to suppress vibrations on the outer periphery of the semiconductor wafer 1. In contrast, in this embodiment 1, as described above, the area of ​​the water outlets 5a that are not covered by the surface protection layer 2 is larger than the area of ​​the water outlets 5a that are covered by the surface protection layer 2, so vibrations on the outer periphery of the semiconductor wafer 1 can be suppressed.

[0021] Figure 5 is a flowchart showing the operation of the wafer grinding apparatus according to this embodiment 1. In step S1, the surface protection layer 2 is adsorbed onto the porous chuck 4 so that each of the multiple water outlets 5a provided on the chuck table 3 is partially covered with the surface protection layer 2. In step S2, water is discharged from the multiple water outlets 5a to the outer periphery of the semiconductor wafer 1.

[0022] In step S3, the back surface of the semiconductor wafer 1 is ground by the grinding wheel 18 on the spindle 17 by rotating the chuck table 3 and the spindle 17. In a plan view, the water outlet 5a aligns with the outer periphery of the semiconductor wafer 1, causing the grinding debris 14 to move to the outer periphery of the chuck table 3 along with the water discharged from the water outlet 5a. The grinding debris 14 that has moved to the outer periphery of the chuck table 3 is blown to the outside of the chuck table 3 by the centrifugal force generated by the rotation of the chuck table 3. After the semiconductor wafer 1 reaches the desired thickness, steps S3, S2, and S1 are completed in this order.

[0023] <Summary of Embodiment 1> As described above, in the wafer grinding apparatus according to this embodiment 1, each of the multiple water outlets 5a discharges water to the outer periphery of the semiconductor wafer 1 while being partially covered by the adsorbed surface protection layer 2. With this configuration, it is possible to suppress grinding debris 14 from wrapping around the outer periphery of the semiconductor wafer 1 and being sucked into the porous chuck 4. As a result, it is expected that the adsorption will decrease due to clogging of the outer periphery of the porous chuck 4, and the frequency of cleaning the porous chuck 4 will be reduced, thus reducing the manufacturing cost of semiconductor devices. Furthermore, if the spacing between the multiple water outlets 5a is made equal, the uniformity of the water discharged from the multiple water outlets 5a to the outer periphery of the semiconductor wafer 1 can be improved.

[0024] Furthermore, in this embodiment 1, the area of ​​the water outlet 5a that is not covered by the adsorbed surface protection layer 2 is larger than the area of ​​the water outlet 5a that is covered by the surface protection layer 2. With this configuration, it is possible to suppress vibration of the outer periphery of the semiconductor wafer 1 due to the water discharged from the water outlet 5a. As a result, it is possible to suppress chipping of the outer periphery of the semiconductor wafer 1 by the grinding wheel 18 and non-uniformity of the back surface that is ground by the semiconductor wafer 1, and similarly, it is possible to suppress the suction of grinding debris 14 into the porous chuck 4.

[0025] Furthermore, as shown in the examples in Figures 1 and 4, by not providing the surface protection layer 2 on the outer periphery of the semiconductor wafer 1, the gap between the outer periphery of the semiconductor wafer 1 and the chuck table 3 can be widened. As a result, the water discharged from the water outlet 5a can be easily moved to the outer periphery of the chuck table 3.

[0026] <Example 1> In this modified example 1, it is possible to optimize the positional relationship between the semiconductor wafer 1 and the water outlet 5a such that the area of ​​the water outlet 5a not covered by the surface protective layer 2 adsorbed on the porous chuck 4 is larger than the area of ​​the water outlet 5a covered by the surface protective layer 2.

[0027] In the configurations shown in Figures 6 and 7, a projection 19a having the same shape as the notch on the semiconductor wafer 1 is provided on the outer circumference of the chuck table 3 as a notch guide. The height of the projection 19a is lower than the finished grinding thickness of the semiconductor wafer 1.

[0028] During the manufacturing process, when the semiconductor wafer 1 is transported to the chuck table 3, the notches (not shown) on the semiconductor wafer 1 engage with the projections 19a on the chuck table 3. With this configuration, the semiconductor wafer 1 can be placed at the desired position on the chuck table 3, and the positional relationship between the semiconductor wafer 1 and the water outlet 5a can be optimized so that the above-mentioned area relationship holds true.

[0029] In the configuration shown in Figures 8 to 10, the chuck table 3 is provided with a movable guide 20 that can move up and down. As shown in Figure 8, the shape of the movable guide 20 in plan view includes a ring facing the outer periphery of the semiconductor wafer 1 and a notch guide 19b facing a notch (not shown) on the semiconductor wafer 1. As shown in Figures 9 and 10, the chuck table 3 includes an operating mechanism that can switch the destination of the water in the water passage 5 between the water outlet 5a and the space 5b below the movable guide 20.

[0030] As shown in Figure 9, before transporting the semiconductor wafer 1, the movable mechanism switches the destination of the water in the water passage 5 to space 5b, and uses the water stored in space 5b to raise the movable guide 20. The semiconductor wafer 1 is transported onto the suction surface of the chuck table 3, which is surrounded by the raised movable guide 20, and is adsorbed by the porous chuck 4.

[0031] As shown in Figure 10, the movable mechanism discharges the water stored in space 5b after adsorbing the semiconductor wafer 1. This causes the movable guide 20 to descend to a position where the height of the upper surface of the movable guide 20 is approximately the same as the height of the upper surface of the chuck table 3 other than the movable guide 20. Then, the movable mechanism switches the destination of the water in the water passage 5 to the water outlet 5a and discharges the water from the water outlet 5a to the outer periphery of the semiconductor wafer 1. After that, the semiconductor wafer 1 is ground by the spindle 17.

[0032] Although the configuration of the chuck table 3 in Figures 8 to 10 is more complex than the configuration of the chuck table 3 in Figures 6 and 7, it allows for a more appropriate positional relationship between the semiconductor wafer 1 and the water outlet 5a compared to the configurations in Figures 6 and 7.

[0033] <Modification 2> In Embodiment 1, the water outlet 5a had a circular shape in plan view, but it is not limited to this. For example, as shown in Figure 11, the water outlet 5a may have a triangular shape in plan view, with its base located on the outer periphery side of the chuck table 3 and its apex located on the center side of the chuck table 3.

[0034] With this configuration, it is easy to make the area of ​​the water outlet 5a that is not covered by the surface protective layer 2 adsorbed on the porous chuck 4 larger than the area of ​​the water outlet 5a that is covered by the surface protective layer 2. Furthermore, by positioning the base of the triangle on the outer circumference side where the circumference is longer than the center side of the chuck table 3, as many water outlets 5a as possible can be provided on the chuck table 3. As a result, it is expected that the total amount of water discharged from the multiple water outlets 5a will increase, and it is expected that grinding debris 14 will be further suppressed from being sucked into the porous chuck 4.

[0035] Furthermore, as shown in Figure 12, for example, in a plan view, the water outlet 5a may have a trapezoidal shape in which the longer side of the two parallel sides is located on the outer periphery side of the chuck table 3 and the shorter side is located on the center side of the chuck table 3.

[0036] With this configuration, as described above, it is easy to make the area of ​​the water outlet 5a that is not covered by the surface protective layer 2 adsorbed on the porous chuck 4 larger than the area of ​​the water outlet 5a that is covered by the surface protective layer 2. In addition, the area of ​​each of the multiple water outlets 5a in plan view can be increased. As a result, it is expected that the amount of water discharged from all of the multiple water outlets 5a will increase, and thus it is expected that grinding debris 14 will be further suppressed from being sucked into the porous chuck 4.

[0037] <Variation 3> In Embodiment 1, as shown in Figure 3, the extension direction of the water passage 5 was perpendicular to the in-plane direction of the chuck table 3, but this is not the only option. For example, as shown in Figure 13, the extension direction of the water passage 5 may be inclined in the rotation direction of the chuck table 3 (direction of the arrow in Figure 13) and also in the direction of the centrifugal force generated by the rotation of the chuck table 3. With this configuration in which the extension direction of the water passage 5 is inclined, it is expected that the flow velocity of the water 13b will be increased, and thus it is expected that grinding debris 14 will be further suppressed from being sucked into the porous chuck 4.

[0038] <Embodiment 2> Figure 14 is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to this second embodiment. In this second embodiment, a porous member 12a is added, which is provided inside the water outlet 5a and comes into contact with the surface protection layer 2 adsorbed on the porous chuck 4. The porous member 12a is made of a porous material with a relatively low density, or a porous material equivalent to that of the porous chuck 4. For example, the porous member 12a may be made of pumice stone or a melamine sponge. It is preferable that the height of the upper surface of the porous member 12a is approximately the same as the height of the upper surface of the chuck table 3.

[0039] As described above, in this embodiment 2, the flow velocity of the water 13a discharged from the water outlet 5a to the outer periphery of the semiconductor wafer 1 can be reduced, thereby suppressing vibration of the outer periphery of the semiconductor wafer 1 caused by the water discharged from the water outlet 5a. As a result, chipping of the outer periphery of the semiconductor wafer 1 by the grinding wheel 18 and non-uniformity of the back surface ground on the semiconductor wafer 1 can be suppressed, and the suction of grinding debris 14 into the porous chuck 4 can be suppressed. Furthermore, by suppressing the suction of grinding debris 14 into the porous chuck 4, it is expected that the adsorption due to clogging of the outer periphery of the porous chuck 4 will decrease, and the frequency of cleaning the porous chuck 4 can be reduced, thus reducing the manufacturing cost of semiconductor devices.

[0040] Furthermore, since the size of the porous member 12a installed in the water outlet 5a is smaller than the size of the porous chuck 4, the replacement cost of the porous member 12a is lower than the replacement cost of the porous chuck 4. Therefore, a reduction in replacement costs can be expected. In addition, if the porous member 12a is made of melamine sponge, the cost can be reduced and the porous member 12a can be easily replaced compared to when the porous member 12a is made of pumice stone.

[0041] <Embodiment 3> Figure 15 is a plan view showing the configuration of the chuck table 3 of the wafer grinding apparatus according to this third embodiment. In this third embodiment, a single groove 3b, which is connected to a plurality of water outlets 5a and has a ring shape in plan view, is provided on the adsorption surface 3a of the chuck table 3. A porous member 12b is added, which extends within the groove 3b and comes into contact with the surface protection layer 2 adsorbed on the porous chuck 4. The porous member 12b is made of the same material as the porous member 12a described in the second embodiment, for example. Preferably, the height of the upper surface of the porous member 12b is approximately the same as the height of the upper surface of the chuck table 3.

[0042] As described above, in this embodiment 3, similar to embodiment 2, the flow velocity of the water 13a discharged from the water outlet 5a to the outer periphery of the semiconductor wafer 1 can be reduced, thereby suppressing vibration of the outer periphery of the semiconductor wafer 1 caused by the water discharged from the water outlet 5a. As a result, chipping of the outer periphery of the semiconductor wafer 1 by the grinding wheel 18 and non-uniformity of the back surface ground on the semiconductor wafer 1 can be suppressed, and the suction of grinding debris 14 into the porous chuck 4 can be suppressed. Furthermore, by suppressing the suction of grinding debris 14 into the porous chuck 4, it is expected that the adsorption due to clogging of the outer periphery of the porous chuck 4 will decrease, and the frequency of cleaning the porous chuck 4 can be reduced, thus reducing the manufacturing cost of semiconductor devices.

[0043] Furthermore, even if the spacing between the multiple water outlets 5a is increased, the uniformity of the water discharged from the multiple water outlets 5a to the outer periphery of the semiconductor wafer 1 can be maintained. In addition, increasing the spacing between the multiple water outlets 5a can increase the strength of the chuck table 3. Moreover, when the porous member 12b is made of melamine sponge, the cost can be reduced and the porous member 12b can be easily replaced compared to when the porous member 12b is made of pumice stone.

[0044] <Embodiment 4> Figure 16 is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to this embodiment 4. In this embodiment 4, the area of ​​the water outlet 5a in a plan view increases as it approaches the suction surface 3a of the chuck table 3.

[0045] With this configuration, the flow velocity of the water 13a discharged from the water outlet 5a to the outer periphery of the semiconductor wafer 1 can be reduced, thereby suppressing vibration of the outer periphery of the semiconductor wafer 1 caused by the water discharged from the water outlet 5a. As a result, chipping of the outer periphery of the semiconductor wafer 1 by the grinding wheel 18 and non-uniformity of the back surface ground on the semiconductor wafer 1 can be suppressed, and the suction of grinding debris 14 into the porous chuck 4 can be suppressed. Furthermore, by suppressing the suction of grinding debris 14 into the porous chuck 4, it is expected that the adsorption due to clogging of the outer periphery of the porous chuck 4 will decrease, and the frequency of cleaning the porous chuck 4 can be reduced, thus reducing the manufacturing cost of semiconductor devices. In addition, since the flow velocity of the water 13a can be reduced even without providing the porous members 12a and 12b of Embodiments 2 and 3, costs can be reduced.

[0046] <Embodiment 5> Figure 17 is an enlarged cross-sectional view showing a part of the configuration of the wafer grinding apparatus according to this embodiment 5. In this embodiment 5, the area of ​​the water outlet 5a in plan view decreases as it approaches the suction surface 3a of the chuck table 3.

[0047] With this configuration, the flow velocity of the water 13b discharged from the water outlet 5a to the outer periphery of the semiconductor wafer 1 can be increased, thereby suppressing the grinding debris 14 from circling around the outer periphery of the semiconductor wafer 1 and being sucked into the porous chuck 4. As a result, it is expected that the adsorption due to clogging of the outer periphery of the porous chuck 4 will decrease, and the frequency of cleaning the porous chuck 4 will be reduced, thus reducing the manufacturing cost of semiconductor devices.

[0048] In this disclosure in English, 'a' and 'an' mean one or more. Therefore, 'a', 'an', 'one or more', and 'at least one' can be used interchangeably.

[0049] Furthermore, it is possible to freely combine each embodiment and each variation, and to modify or omit each embodiment and each variation as appropriate.

[0050] The various aspects of this disclosure are summarized below as an appendix.

[0051] (Note 1) A chuck table having a porous chuck for adsorbing a surface protective layer provided on the first surface of a semiconductor wafer, A spindle having a grinding wheel for grinding the second surface of the semiconductor wafer, opposite to the first surface on which the surface protective layer is adsorbed, and Equipped with, Multiple outlets for discharging water to the outer periphery of the semiconductor wafer, each partially covered by the adsorbed surface protective layer, are provided on the chuck table along the circumferential direction of the circle surrounding the porous chuck in a plan view. A semiconductor manufacturing apparatus in which the area of ​​the discharge port not covered by the adsorbed surface protective layer is larger than the area of ​​the discharge port covered by the surface protective layer.

[0052] (Note 2) The semiconductor manufacturing equipment described in Appendix 1, A semiconductor manufacturing apparatus further comprising a porous member provided within the discharge port and in contact with the adsorbed surface protective layer.

[0053] (Note 3) The semiconductor manufacturing equipment described in Appendix 1, A single groove, which is connected to the plurality of discharge ports and has a ring shape in plan view, is provided on the suction surface of the chuck table. A semiconductor manufacturing apparatus further comprising a porous member provided within the groove and in contact with the adsorbed surface protective layer.

[0054] (Note 4) A semiconductor manufacturing apparatus described in any one of the items from Appendix 1 to Appendix 3, A semiconductor manufacturing apparatus wherein the area of ​​the discharge port in a plan view increases as it approaches the suction surface of the chuck table.

[0055] (Note 5) A semiconductor manufacturing apparatus described in any one of the items from Appendix 1 to Appendix 3, A semiconductor manufacturing apparatus wherein the area of ​​the discharge port in a plan view decreases as it approaches the suction surface of the chuck table.

[0056] (Note 6) A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus described in any one of the items 1 to 5 of the appendix, A step of adsorbing the surface protective layer onto the porous chuck such that each of the plurality of discharge ports provided on the chuck table is partially covered by the surface protective layer, The process involves grinding the second surface of the semiconductor wafer with the spindle while discharging water from the plurality of discharge ports to the outer periphery of the semiconductor wafer. A method for manufacturing a semiconductor device, comprising: [Explanation of Symbols]

[0057] 1 Semiconductor wafer, 2 Surface protective layer, 3 Chuck table, 3a Adsorption surface, 3b Groove, 4 Porous chuck, 5a Water outlet, 12a, 12b Porous material, 17 Spindle, 18 Grinding wheel.

Claims

1. A chuck table having a porous chuck for adsorbing a surface protective layer provided on the first surface of a semiconductor wafer, A spindle having a grinding wheel for grinding the second surface of the semiconductor wafer, opposite to the first surface on which the surface protective layer is adsorbed, and Equipped with, Multiple outlets for discharging water to the outer periphery of the semiconductor wafer, each partially covered by the adsorbed surface protective layer, are provided on the chuck table along the circumferential direction of the circle surrounding the porous chuck in a plan view. A semiconductor manufacturing apparatus in which the area of ​​the discharge port not covered by the adsorbed surface protective layer is larger than the area of ​​the discharge port covered by the surface protective layer.

2. A semiconductor manufacturing apparatus according to claim 1, A semiconductor manufacturing apparatus further comprising a porous member provided within the discharge port and in contact with the adsorbed surface protective layer.

3. A semiconductor manufacturing apparatus according to claim 1, A single groove, which is connected to the plurality of discharge ports and has a ring shape in plan view, is provided on the suction surface of the chuck table. A semiconductor manufacturing apparatus further comprising a porous member provided within the groove and in contact with the adsorbed surface protective layer.

4. A semiconductor manufacturing apparatus according to claim 1, A semiconductor manufacturing apparatus wherein the area of ​​the discharge port in a plan view increases as it approaches the suction surface of the chuck table.

5. A semiconductor manufacturing apparatus according to claim 1, A semiconductor manufacturing apparatus wherein the area of ​​the discharge port in a plan view decreases as it approaches the suction surface of the chuck table.

6. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus according to any one of claims 1 to 5, A step of adsorbing the surface protective layer onto the porous chuck such that each of the plurality of discharge ports provided on the chuck table is partially covered by the surface protective layer, The process involves grinding the second surface of the semiconductor wafer with the spindle while discharging water from the plurality of discharge ports to the outer periphery of the semiconductor wafer. A method for manufacturing a semiconductor device, comprising:

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