Cluster tool for production value manufacturing of duran bridge quantum josephson junction devices

Abstract

A deposition system includes a deposition source and a scan stage disposed within a deposition path of the deposition source. The scan stage includes a support platform configured to support a wafer thereon and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scan stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scan stage, the controller configured to control the mechanical actuator to translate the wafer relative to the slit such that a deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is not aligned with the slit from contacting the wafer.

Description

Technical Field

[0001] This invention relates to a tool for manufacturing quantum devices, and more specifically to a cluster tool for manufacturing Dolan bridge Josephson junction devices. Background Technology

[0002] Fabrication of Duranbridge Josephson junction qubits is currently being developed on non-fabrication equipment that processes small wafers rather than entire wafers. The uniformity of this processing is insufficient to achieve image formation with tolerances consistent with those found in quantum chip fabrication. Current fabrication techniques can lead to image size variations due to inconsistent evaporation angles and junction dielectric variations due to insufficient process control. Junction dielectric variations can alter the frequency of quantum devices such as qubits and can also introduce defects that can couple into the junction dielectric, thus shortening the device's coherence time. Therefore, systems and methods for fabricating quantum devices on an all-wafer scale are needed. Summary of the Invention

[0003] According to an embodiment of the invention, a deposition system includes a deposition source and a stage disposed within a deposition path of the deposition source. The stage includes a support platform and a mechanical actuator, the support platform being configured to support a wafer thereon, and the mechanical actuator being coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the stage, the controller being configured to control the mechanical actuator to translate the wafer relative to the slit such that the deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material with a trajectory not aligned with the slit from contacting the wafer. The deposition system provides chemical deposition uniformity capable of producing a complete wafer, enabling the formation of a series of uniform features across the entire surface of the wafer. The wafer can then be diced into individual chips.

[0004] According to embodiments of the invention, the clustering tool includes a plurality of alternative fabrication tools. The plurality of alternative fabrication tools includes a deposition system comprising a deposition source and a scanning stage disposed within a deposition path of the deposition source. The scanning stage includes a support platform and a mechanical actuator, the support platform being configured to support a wafer thereon, the mechanical actuator being coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within a deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scanning stage, the controller being configured to control the mechanical actuator to translate the wafer relative to the slit such that the deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory misaligned with the slit from contacting the wafer. The plurality of alternative fabrication tools also include a dielectric system comprising a dielectric power source configured to form a dielectric layer on the wafer. In addition to providing chemical deposition control provided by the deposition system, the clustering tool is capable of fully processing structures on the wafer without breaking the vacuum.

[0005] According to an embodiment of the present invention, a method for performing angled deposition includes: providing a deposition source; and positioning a proximity mask in a deposition path of the deposition source, the proximity mask having a slit at a first location relative to the deposition source. The method further includes translating a wafer relative to the slit during deposition of a deposition source material such that the deposition angle remains substantially constant and the proximity mask prevents deposition source material with a trajectory deviating from slit alignment from contacting the wafer. This method enables angular evaporation with high uniformity over a large surface area (e.g., a wafer surface). This method achieves image formation with tolerances consistent with those of quantum chip fabrication. Attached Figure Description

[0006] Figure 1 This is a schematic diagram of a deposition system according to an embodiment of the present invention.

[0007] Figure 2 It is according to an embodiment of the present invention having with Figure 1 Schematic diagram of sedimentary systems at different depositional angles.

[0008] Figure 3 This is a schematic diagram of the Durand Bridge Josephson Knot.

[0009] Figure 4A It is a schematic diagram of a plan view of a substrate having a release mask on which a first layer and a second layer are formed.

[0010] Figure 4B It is a schematic diagram of a cross-sectional view of a substrate having a release mask on which a first layer and a second layer are formed.

[0011] Figure 5A It is a schematic plan view of a substrate having a metal layer deposited on a second layer on a stripping mask and on an exposed substrate.

[0012] Figure 5B It is a schematic diagram of a cross-sectional view of a substrate having a metal layer deposited on a second layer on a stripping mask and on an exposed substrate.

[0013] Figure 6A It is a schematic diagram of a planar dielectric layer formed on a portion of a metal layer deposited on a substrate.

[0014] Figure 6B This is a schematic diagram of a cross-sectional view of a dielectric layer formed on a portion of a metal layer deposited on a substrate.

[0015] Figure 7A This is a schematic diagram of the plan view of the second metal layer formed by directional deposition.

[0016] Figure 7B This is a schematic diagram of a cross-sectional view of the second metal layer formed by directional deposition.

[0017] Figure 8 This is a schematic diagram of directional deposition.

[0018] Figure 9 This is a schematic diagram of setting up a material deposition source on a wafer.

[0019] Figure 10 This is a schematic diagram of a wafer with a mask formed on it.

[0020] Figure 11 This is a schematic diagram of a deposition source and a proximity mask according to some embodiments of the present invention.

[0021] Figure 12 This is a schematic diagram of a deposition source and a proximity mask according to some embodiments of the present invention.

[0022] Figure 13 This is a schematic diagram of a deposition system in which the angle of the support platform relative to the deposition path is selectable.

[0023] Figure 14 This is a schematic diagram of a deposition system including deposition chambers.

[0024] Figure 15 This is a schematic diagram of a clustering tool according to some embodiments of the present invention.

[0025] Figure 16 This is a schematic diagram of a method for performing angled deposition according to some embodiments of the present invention. Detailed Implementation

[0026] Figure 1 This is a schematic diagram of a deposition system 100 according to an embodiment of the present invention. The deposition system 100 includes a deposition source 102 and a scanning stage 104 disposed within a deposition path 106 of the deposition source 102. The scanning stage 104 includes a support platform 108 configured to support a wafer 110 thereon. The scanning stage 104 also includes a mechanical actuator 112 coupled to the support platform 108. The mechanical actuator 112 is configured to translate the support platform 108 relative to the deposition source 102. The deposition system 100 includes a proximity mask 114 disposed within the deposition path 106 of the deposition source 102 between the deposition source 102 and the scanning stage 104. The proximity mask 114 defines a slit 116. The deposition system 100 includes a controller 118 in communication with the scanning stage 104. The controller 118 is configured to control the mechanical actuator 112 to translate the wafer 110 relative to the slit 116 such that a deposition angle 120 remains substantially constant. During operation, the proximity mask 114 prevents deposited source material with a trajectory that is off-aligned with the slot 116 from contacting the wafer 110.

[0027] The term "substantially constant" is intended to mean that the deposition angle can vary by ±10° or less. According to some implementations, the deposition angle can vary by ±5° or less.

[0028] Figure 2 This is a schematic diagram of a deposition system 200 according to an embodiment of the present invention. Figure 2 In this embodiment, the proximity mask 202 is configured such that the slit 204 is located directly below the deposition source 206. In this embodiment, the deposition angle 208 is 90°. According to some embodiments of the invention, the deposition angle is defined as the angle between the deposition surface 210 of the wafer 212 and a line 214 that connects the deposition source 206 to the wafer 212 and passes through the center of the slit 204.

[0029] Figure 1 and Figure 2 The deposition system illustrated schematically can be used to form uniform structures on a wafer. For example, this system can be used to form Duran-bridged Josephson junctions. Figure 3 This is a schematic diagram of a Duran bridge Josephson junction 300. The Duran bridge Josephson junction 300 includes a first lead 302 formed on a substrate 304. The Duran bridge Josephson junction 300 includes a second lead 306 formed on the first lead 302, and has a dielectric layer formed between the first lead 302 and the second lead 306.

[0030] Figure 4A-7B An example process for forming the Durand-Josephson knot is illustrated schematically. Figure 4A and 4BThis is a schematic illustration of a plan view and a cross-sectional view of a substrate 400 having a release mask having a first layer 402 and a second layer 404 formed thereon. The first layer 402 and the second layer 404 are patterned, for example, using photolithography to expose portions 406, 408 of the substrate 400 on which a Duran bridge Josephson junction will be formed. The first layer 402 and the second layer 404 can be selected such that the portion of the exposed substrate 400 etched is larger than the opening area in the second layer 404. The first layer 402 may comprise, for example, an organic polymer or a material soluble in an organic solvent. The second layer 404 may comprise, for example, titanium or silicon. For example, reactive ion etching can be used to etch the first layer 402 and the second layer 404. The etching can be performed on the first layer 402 faster than on the second layer 404.

[0031] This process may include depositing metal on a mask and an exposed substrate. In one example, 90° deposition is used to deposit the metal. Figure 5A and 5B This is a schematic illustration of a plan view and a cross-sectional view of a substrate 500 having a metal layer 502 deposited on a second layer 504 on a release mask and on an exposed substrate 500. A portion 506 of the metal layer 502 deposited on the substrate 500 forms the first lead of a Duran bridge Josephson junction. The metal layer 502 may include, for example, aluminum, lead, titanium, tantalum, tantalum nitride, titanium nitride, vanadium, or niobium.

[0032] The process may include forming a dielectric layer on a portion of a metal layer deposited on a substrate. This may include depositing a dielectric material on the metal layer, or exposing the metal layer to oxygen to form the dielectric layer. Figure 6A and 6B This is a schematic diagram of a plan view and a cross-sectional view of a dielectric layer 600 formed on a portion 602 of a metal layer 604 deposited on a substrate 608.

[0033] The process may include forming a second metal layer using directional deposition, wherein the deposition angle differs from the deposition angle of the first lead used to form the Durand-Josephson junction. For example, the deposition source may be positioned with a deposition angle between 45° and 60°. Figure 7A and Figure 7B This is a schematic diagram of the plan view and cross-sectional view of the second metal layer 700 formed by directional deposition. A portion 702 of the second metal layer 700 can form the second lead of a Duran-bridge Josephson junction. The overlapping first lead 704, dielectric layer 706, and second lead 702 form a Josephson junction 708. Due to the directional nature of the metal deposition, additional metal features 710 can be deposited on the substrate through a 90° deposition through the opening used to form the first lead 704. Furthermore, as... Figure 7AAs schematically shown, a portion of the dielectric layer 706 formed on the first lead 704 remains exposed. The second metal layer 700 may include, for example, aluminum, lead, titanium, tantalum, tantalum nitride, titanium nitride, vanadium, or niobium.

[0034] Figure 8 This is a schematic diagram of directional deposition. Figure 8 In the diagram, the two lines 800 and 802 representing the trajectory of the deposited material are parallel, enabling controlled feature formation on the substrate 804. A mask 806 prevents substantial deviation of the deposition angle 808. While this setup may be sufficient to deposit features on a single chip, it is insufficient for patterning features across an entire wafer. Classical computer chips are formed on semiconductor wafers, which are then divided into chips. With the advancement of quantum computing, there is a constant push to increase the number of qubits in quantum processors. Fabrication techniques capable of reliably forming qubit chips in large quantities are needed. However, Figure 8 The directional deposition technique shown relies on the ability to control the deposition angle 80°. For example... Figure 9 As shown, when a single deposition source is used to arrange metal over a large area, the deposition angle can be changed.

[0035] Figure 9 This is a schematic diagram of a material deposition point source 900 disposed on wafer 902. As indicated by the three arrows 904, 906, and 908, the deposition angle varies significantly on the surface of wafer 902, which leads to changes in the feature size on wafer 902 and the relative positions of the features. Figure 10 This is a schematic diagram of a wafer 1000 having a mask 1002 formed thereon, such as masks 402 and 404 in Figure 4 used to generate a Durand-Josephson junction. Figure 10 This illustrates how the deposition angle differs for each of the three openings in mask 1002. The change in angle results in variations in the size and relative position of the features formed on wafer 1000. Consequently, when wafer 1000 is diced into chips, the features on the chips will vary from chip to chip.

[0036] exist Figure 1 The deposition system schematically illustrated addresses the problem of varying deposition angles. System 100 includes a proximity mask 114 between the deposition source 102 and the wafer 110, and enables the wafer 110 to be scanned across a slit 116 in the proximity mask 114. System 100 ensures that the deposition angle 120 and the distance from the deposition source 102 to the wafer 110 remain substantially constant across the entire wafer 110. Thus, after deposition, the wafer 110 can be diced into substantially identical chips. System 100 eliminates the need for a collimated evaporation source, simplifying system design.

[0037] The distance from deposition source 102 to proximity mask 114 can be relatively short, thereby reducing material loss and tool footprint. The slit 116 can have a width of, for example, about 2 cm or less. Reducing the size of slit 116 enhances angle control but is detrimental to throughput. Conversely, increasing the size of slit 116 allows for faster deposition rates but also leads to deterioration in angle control. The distance D between proximity mask 114 and wafer 110 can be about 2 cm or less. If the distance D is too large, the material will spread out after passing through slit 116. According to some embodiments, the distance D between proximity mask 114 and wafer 110 can be about 1 cm.

[0038] Figure 11 This is a schematic plan view of a deposition source 1100 and a proximity mask 1102 according to some embodiments of the present invention. The deposition source 1100 spans the length of a slit 1104 in the proximity mask 1102. The deposition source 1100 can be a continuous deposition source arranged in a boat or tray, or it can be a series of point sources. Alternatively, the deposition source 1100 can be an ultra-high vacuum (UHV) spray / sputtering source with a degree of directionality. Figure 11 In this embodiment, the deposition source 1100 has a length LD equal to the length LS of the slit 1104 in the mask 1102. In some embodiments, the deposition source 1100 may be shorter or longer than the slit 1104. However, configuring the deposition source 1100 to span the slit 1104 ensures uniform deposition of the source material on the wafer.

[0039] The proximity mask 1102 may include a material capable of withstanding high heat without warping. The proximity mask 1102 may include, for example, metal, ceramic, or thermally stable carbon. The deposition system may include a cooling system configured to cool the sides of the deposition chamber and / or the proximity mask 1102 to help the deposited material adhere to the deposition chamber and the proximity mask 1102, rather than peeling or forming spots that displace the wafer and create defects on the wafer. The proximity mask 1102 may include a heat sink to help cool the proximity mask 1102 to facilitate the adhesion of deposited material with a trajectory not aligned with the slot 1104. According to some embodiments of the invention, the system may include a collimating element between the deposition source 1100 and the proximity mask 1102. For example, a metal support or honeycomb structure may be placed near the deposition source 1100 to capture deposited material with a trajectory deviating from the desired deposition angle.

[0040] Figure 12 This is a schematic plan view of a deposition source 1200 and a proximity mask 1202 according to some embodiments of the present invention. The deposition source 1200 spans a length L across the slit 1204 in the proximity mask 1202. S However, the gap 1204 does not extend across the length L of the mask 1202.P Conversely, the slit 1204 exposes only a portion of the wafer in the vertical direction, allowing for better control of the angle along the slit 1204. Figure 12 The configuration shown can be used to deposit multiple rows of chips across a wafer in a single scan. For example, a wafer can be aligned with slot 1204 to deposit a first set of chip rows across the wafer in a single scan, and then slot 1204 or the wafer can be stepped to another set of rows, and the wafer can be scanned again across slot 1204 to deposit on a second set of chip rows. The proximity mask 1202 may include adjustable portions 1206, 1208 to allow adjustment of the length L of slot 1204. S and location.

[0041] Figure 13 This is a schematic diagram of the deposition system 1300, in which the angle 1302 of the support platform 1304 relative to the deposition path 1306 is selectable. In this embodiment, a mechanical actuator may be configured to translate the support platform 1304 at a tilt angle relative to the deposition surface 1308 of the wafer 1310 in direction 1312. The scanning stage 1314 may include an adjustment mechanism that enables adjustment of the angle 1302. The support platform 1304 may have a first configuration for depositing a first lead of a Duran-bridge Josephson junction, and the angle 1302 may then be adjusted to a second configuration for depositing a second lead of a Duran-bridge Josephson junction. The deposition system 1300 may include an electron gun prior to the slit 1316 to provide collimation of atoms in the beam. An ionized beam may enhance collimation, and a second proximity mask with the slit may be added close to the deposition surface 1308 of the wafer 1310 to further improve collimation. Alternatively, an ion implantation source may be used. To provide collimation, a high current (e.g., plasma immersion injection with an electronic grid above the substrate) can be used to neutralize the beam prior to deposition. Slit 1316 can be a collimation slit. Figure 13 The configuration schematically shown can utilize additional chemical deposition control techniques because the gap varies significantly from wafer 1310 to slot 1316.

[0042] The deposition system may include a deposition chamber. Figure 14 This is a schematic diagram of a deposition system 1400 including a deposition chamber 1402. A deposition source 1404, a scanning stage 1406, and a proximity mask 1408 are disposed in the deposition chamber 1402. The deposition system 1400 includes a proximity mask holder 1410 configured to releasably fix the proximity mask 1408 relative to the deposition source 1404, thereby enabling selection of a deposition angle 1412.

[0043] According to some embodiments of the invention, the deposition source 1404 is a metal evaporation source. According to some embodiments, the deposition source 1404 is a sputtering deposition source. Sputtering deposition sources enable control over film thickness, precise dielectric deposition, and precise atomic composition for multi-element materials. According to some embodiments, the deposition source 1404 is a hollow cathode plasma jet (HCPJ) sputtering deposition source. The deposition chamber 1402 and the support platform 1414 are groundable. According to some embodiments, the deposition system 1400 includes a laser 1416 configured to irradiate the deposition source 1404, and the deposition system 1400 is configured to deposit the source material by pulsed laser deposition. According to some embodiments, the deposition chamber 1402 includes a gas inlet 1418 and a gas outlet 1420, the gas inlet 1418 and the gas outlet 1420 being configured to introduce gas into and remove gas from the deposition chamber 1402, and the deposition system 1400 is configured to deposit the source material by sputtering deposition. Although Figure 14 The deposition chamber 1402 is schematically shown to have each of the aforementioned features, but the deposition chamber 1402 may have all or a subset of the features, depending on the deposition method used. According to some embodiments, the deposition system 1400 includes an electron gun for material ionization and beam control between the deposition source 1404 and the proximity mask 1408. The deposition system 1400 may also include electrode plates to guide the deposited material, potentially resulting in faster film formation and better angle control. Embodiments of the invention are not limited to the deposition methods described herein. The deposition methods described herein are provided as non-limiting examples.

[0044] Figure 15 This is a schematic diagram of a clustering tool 1500 according to some embodiments of the present invention. The clustering tool 1500 includes a plurality of selectable manufacturing tools 1502-1518. Manufacturing tools 1502-1518 include a deposition system 1502. For example, the deposition system 1502 may include... Figure 1 The features of the deposition system 100 are schematically shown in the diagram. The deposition system 1502 can be configured to deposit a deposition source material on a wafer at a first deposition angle. The fabrication tools 1502-1518 also include a dielectric system 1504. The dielectric system 1504 includes a dielectric power source 1522 configured to form a dielectric layer on the wafer. The dielectric power source 1522 can be a source for depositing dielectric material (e.g., using sputtering deposition, molecular beam epitaxy, or chemical vapor deposition). Alternatively, the dielectric power source 1522 can be an oxygen source, and the oxygen source can be used to oxidize metals on the wafer, thereby forming an oxide layer.

[0045] According to some embodiments of the present invention, the clustering tool 1500 further includes a second deposition system 1506. The second deposition system 1506 can be configured to deposit source material onto the wafer at a second deposition angle. The second deposition angle may differ from a first deposition angle. For example, one of the first and second deposition angles may be 90°, while the other may be an angle less than 90°. The second deposition system 1506 may include an evaporation hood and a collimation slit.

[0046] Deposition system 1502, dielectric system 1504, and second deposition system 1506 can be used to form multiple Duran bridge Josephson junctions on a wafer. For example, deposition system 1502 can form multiple first leads of multiple Duran bridge Josephson junctions, like... Figure 5A and 5B The first lead 506 is then formed on the dielectric system 1504. Subsequently, a dielectric layer can be formed on the first lead, connecting with... Figure 6A and Figure 6B The dielectric layer 600 is similar. Then, the second deposition system 1506 can form multiple second leads for multiple Durand-bridged Josephson junctions, such as... Figure 7A and Figure 7B The second lead 702 in the deposition system. The combination of the proximity mask and the scanning stage in each of the deposition systems 1502 and 1506 enables the formation of multiple uniform features on the surface of the wafer. The wafer can then be diced into individual chips. For example, the wafer can have a diameter of approximately 200 mm and can be divided into 20 mm × 20 mm chips.

[0047] Cluster tool 1500 may include additional manufacturing tools for preparing the wafer. For example, cluster tool 1500 may include an annealing system 1508. Annealing system 1508 may include a heat source 1524 configured to anneal the wafer. Annealing system 1508 may be, for example, a rapid thermal annealing system or a laser annealing system. Cluster tool 1500 may include a cleaning system configured to clean the deposited surface of the wafer. For example, cluster tool 1500 may include a SICONI cleaning system 1510. The SICONI cleaning system may include a system operated via a chemical process that removes oxidized silicon. More specifically, it may refer to a process that uses ammonium fluoride as a mild HF source in a vacuum processing chamber. The HF material reacts with silicon oxide on the wafer surface to produce SiF4 and water as a volatile byproduct that is easily removed from the wafer surface. Cluster tool 1500 may also include a sputtering cleaning system, a reactive ion etching cleaning system, or a plasma cleaning system 1512. Cluster tool 1500 may also include a sputtering metal deposition system or a sputtering encapsulation system 1514.

[0048] Cluster tool 1500 may include a packaging system 1516 configured to place a packaging layer on a wafer. The packaging system 1516 may be, for example, an atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD) packaging system, or a plasma packaging system. The deposition of the packaging material may be oriented and may include, for example, encapsulating the wafer with a film of silicon oxide or aluminum oxide.

[0049] Cluster tool 1500 may include an additional reactive ion etching process and cleaning system 1518. Cluster tool 1500 may include input / output 1520 configured to receive wafers for processing and output wafers once processing is complete. Cluster tool 1500 may include an automated transfer system configured to transfer wafers from one manufacturing tool to another. For example, cluster tool 1500 may receive wafers at input / output 1520 and then process the wafers in a plurality of selectable manufacturing tools 1502-1518. Wafers may be processed in each of the selectable manufacturing tools 1502-1518 or in a subset of the selectable manufacturing tools 1502-1518. According to an embodiment of the present invention, a clustering tool 1500 receives a wafer at input / output 1520, cleans the wafer using a SICONI cleaning system 1510, deposits a first Duran bridge Josephson junction lead using a deposition system 1502, forms a dielectric layer using a dielectric system 1504, and deposits a second Duran bridge Josephson junction lead using a second deposition system 1506. The clustering tool 1500 then anneales the wafer using an annealing system 1508 and outputs the wafer at input / output 1520. This process is provided as a non-limiting example. The clustering tool 1500 may include... Figure 15 The diagram illustrates manufacturing tools with more, fewer, or alternative manufacturing tools, and the position and order of the manufacturing tools may differ. Figure 15 The positions and order of the manufacturing tools are shown in the diagram.

[0050] Cluster tool 1500 can be configured to process multiple wafers simultaneously. For example, each selectable manufacturing tool 1502-1518 can be configured to hold one or more wafers at a given time. Wafers can be passed from one manufacturing tool to the next, allowing multiple wafers to be at different stages of the production process simultaneously. Cluster tool 1500 enables wafer production without disrupting the vacuum.

[0051] Cluster tool 1500 enables process control and in-situ measurements. The thickness of the metal layer can be controlled, and the temperature of the deposition chamber and wafer can be controlled during deposition. For example, deposition systems 1502 and 1506 may include a cooling system to cool the wafer during deposition to prevent the formation of clumps and bumps in the deposited film due to atomic aggregation. For example, the cooling system can cool the wafer to -30°C or lower.

[0052] The cluster tool 1500 also enables control over the thickness of the dielectric layer and ensures uniformity of metal deposition across gaps in the mask. The cluster tool 1500 provides chemical deposition uniformity capable of full-wafer production and allows for optimization of each processing step. The cluster tool 1500 can use lithography materials compatible with each of the multiple selectable fabrication tools 1502-1518. Furthermore, a release mask, such as the release mask with a first layer 402 and a second layer 404 schematically shown in FIG. 4, can be formed on the wafer before it is fed into the cluster tool 1500.

[0053] Figure 16 This is a schematic diagram of a method 1600 for performing angled deposition according to some embodiments of the present invention. Method 1600 includes providing a deposition source 1602. Method 1600 includes arranging a proximity mask in the deposition path of the deposition source, the proximity mask having a slit 1604 at a first location relative to the deposition source. Method 1600 includes translating the wafer relative to the slit during deposition of the deposition source material such that the deposition angle remains substantially constant and the proximity mask prevents deposition source material with a trajectory deviating from the slit alignment from contacting the wafer 1606.

[0054] According to some embodiments, method 1600 further includes forming a dielectric layer on a deposition source material deposited on a wafer. Method 1600 may further include: changing the position of the slot relative to the deposition source to a second position different from the first position; and translating the wafer relative to the slot during a second deposition of the deposition source material such that the angle of the second deposition remains substantially constant and that a proximity mask prevents deposition source material with a trajectory not aligned with the slot from contacting the wafer.

[0055] According to some embodiments of the invention, the evaporation unit includes a wafer stage capable of scanning during metal deposition and a proximity mask angled to the source. The evaporation unit may include an elongated source material container to allow material to be uniformly supplied across the elongated collimating hood, thereby enabling uniform wafer coating as the wafer is scanned through the elongated evaporation collimating opening. According to some embodiments of the invention, clustering tools can fully process the device module structure in situ without disrupting the vacuum. Clustering tools include tools for wafer cleaning, metal deposition, dielectric deposition, annealing, full-wafer scanning angled metal evaporation (with production-value-added critical size control), and encapsulation.

[0056] Various embodiments of the invention have been described for illustrative purposes, but are not intended to be exhaustive or limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein has been chosen to best explain the principles of the embodiments, their practical application, or technical improvements to technologies found in the market, or to enable those skilled in the art to understand the embodiments disclosed herein.

Claims

1. A sedimentation system, comprising: Sediment source; A scanning stage is disposed within the deposition path of the deposition source. The scanning stage includes a support platform and a mechanical actuator. The support platform is configured to support a wafer thereon, and the mechanical actuator is coupled to the support platform and configured to translate the support platform relative to the deposition source. A proximity mask, disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit, wherein the length of the slit is adjustable, and wherein the proximity mask includes two adjustable portions for defining the length of the slit, the two adjustable portions being configured to adjust the length of the slit and the position of the slit along the length; and A controller, communicating with the scanning stage, is configured to control the mechanical actuator to translate the wafer relative to the slit, such that the deposition angle remains constant. In operation, the proximity mask prevents deposited source material with a trajectory that is not aligned with the gap from contacting the wafer.

2. The deposition system according to claim 1, wherein, The deposition source spans the length of the gap.

3. The deposition system according to claim 1 or 2, wherein, The gap has a length that is less than the length of the approach mask.

4. The deposition system according to claim 1 or 2, wherein, The deposition angle is selectable, and the deposition system further includes a proximity mask fixture configured to releasably fix the position of the proximity mask relative to the deposition source so that the deposition angle can be selected.

5. The deposition system according to claim 1 or 2, wherein, The angle of the support platform relative to the deposition path is selectable.

6. The deposition system according to claim 1 or 2, wherein, The mechanical actuator is configured to translate the support platform in a direction parallel to the deposition surface of the wafer.

7. The deposition system according to claim 1 or 2, wherein, The mechanical actuator is configured to translate the support platform at an angle relative to the deposition surface of the wafer.

8. The deposition system according to claim 1 or 2, wherein, The deposition source is a metal evaporation source.

9. The deposition system according to claim 1 or 2, further comprising a laser configured to irradiate the deposition source. in, The deposition system is configured to deposit the source material by pulsed laser deposition.

10. The deposition system according to claim 1 or 2, further comprising a gas inlet and a gas outlet, the gas inlet and gas outlet being configured to introduce gas into a chamber provided with the deposition system and to remove gas from the chamber. in, The deposition system is configured to deposit source material via sputter deposition.

11. The deposition system according to claim 1 or 2, further comprising a deposition chamber, in, The deposition source, the scanning stage, and the proximity mask are disposed in the deposition chamber.

12. A clustering tool, the clustering tool comprising a plurality of selectable manufacturing tools, the plurality of selectable manufacturing tools comprising: Deposition systems, including: Sediment source; A scanning stage is disposed within the deposition path of the deposition source. The scanning stage includes a support platform and a mechanical actuator. The support platform is configured to support a wafer thereon, and the mechanical actuator is coupled to the support platform and configured to translate the support platform relative to the deposition source. A proximity mask, disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit, wherein the length of the slit is adjustable, and wherein the proximity mask includes two adjustable portions for defining the length of the slit, the two adjustable portions being configured to adjust the length of the slit and the position of the slit along the length; and A controller, communicating with the scanning stage, is configured to control the mechanical actuator to translate the wafer relative to the slit, such that a first deposition angle remains constant. In operation, the proximity mask prevents deposited source material with a trajectory misaligned with the gap from contacting the wafer; and A dielectric system including a dielectric power source, the dielectric power source being configured to form a dielectric layer on the wafer.

13. The clustering tool of claim 12, further comprising: The second deposition system includes: Second sedimentary source; A second scanning stage is arranged within the deposition path of the second deposition source. The second scanning stage includes a second support platform and a second mechanical actuator. The second support platform is configured to support the wafer thereon, and the second mechanical actuator is coupled to the second support platform and configured to translate the second support platform relative to the second deposition source. A second proximity mask is disposed within the deposition path of the second deposition source between the second deposition source and the second scanning stage, and the second proximity mask defines a second slit; and A second controller, communicating with the second scanning stage, is configured to control the second mechanical actuator to translate the wafer relative to the second slit, such that the second deposition angle remains constant. In operation, the second proximity mask prevents deposited source material with a trajectory misaligned with the second gap from contacting the wafer; and The first deposition angle is different from the second deposition angle.

14. The clustering tool according to claim 12 or 13, further comprising: An annealing system, the annealing system including a heat source configured to anneal the wafer.

15. The clustering tool according to claim 12 or 13, further comprising: A cleaning system configured to clean the deposited surface of the wafer.

16. The clustering tool of claim 15, wherein, The cleaning system includes SICONI cleaning system, sputtering cleaning system, reactive ion etching cleaning system, or plasma cleaning system.

17. The clustering tool according to any one of claims 12, 13 and 16, further comprising a packaging system configured to provide a packaging layer on the wafer.

18. The clustering tool of claim 17, wherein, The packaging system includes a sputtering packaging system, an ALD packaging system, an MOCVD packaging system, or a plasma packaging system.

19. A method for performing angled deposition, comprising: Provide a sediment source; A proximity mask is positioned in the deposition path of the deposition source, the proximity mask having a slit at a first position relative to the deposition source, wherein the length of the slit is adjustable, and wherein the proximity mask includes two adjustable portions for defining the length of the slit, the two adjustable portions being configured to adjust the length of the slit and the position of the slit along the length; and During the deposition of the source material, the wafer is translated relative to the slit such that the first deposition angle remains constant and the proximity mask prevents the source material with an alignment trajectory deviating from the slit from contacting the wafer.

20. The method of claim 19, further comprising: A dielectric layer is formed on the deposition source material deposited on the wafer.

21. The method of claim 20, further comprising: The position of the gap relative to the deposition source is changed to a second position different from the first position; as well as During the second deposition of the source material, the wafer is translated relative to the slit such that the second deposition angle remains constant and the proximity mask prevents source material with a trajectory not aligned with the slit from contacting the wafer.

Images