Light-emitting device

Abstract

To provide a display device with a narrow border. 【Solution means】A display device in which a first layer, a second layer, and a third layer are laminated. The first layer has a gate driver circuit and a data driver circuit. The second layer has a demultiplexer circuit. The third layer has a display portion. Pixels are arranged in a matrix in the display portion. The input terminals of the demultiplexer circuit are electrically connected to the data driver circuit, and the output terminals of the demultiplexer circuit are electrically connected to the pixels. The gate driver circuit and the data driver circuit are provided so as to have a region overlapping with the pixels. Further, the gate driver circuit and the data driver circuit are not clearly separated and have an overlapping region. Five or more gate driver circuits and data driver circuits can be provided respectively.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention disclosed in this specification and the like includes semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, their driving methods, or their manufacturing methods as an example. A semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics.

Background Art

[0003] As a semiconductor material applicable to transistors, an oxide semiconductor using a metal oxide has attracted attention. For example, in Patent Document 1, a semiconductor device is disclosed in which a plurality of oxide semiconductor layers are stacked, and among the plurality of oxide semiconductor layers, the oxide semiconductor layer serving as a channel contains indium and gallium, and by making the ratio of indium larger than the ratio of gallium, the field-effect mobility (sometimes simply referred to as mobility or μFE) is increased. <00*********100> [[ID=*********103]]

[0004] [[ID=*********104]] [[ID=*********105]] [[ID=*********1*********06]] [[ID=*********1*********07]] [[ID=*********1*********08]] [[ID=*********1*********09]] [[ID=*********1*********10]] Since the metal oxide that can be used for the semiconductor layer can be formed by using a sputtering method or the like, it can be used for the semiconductor layer of a transistor constituting a large display device. In addition, since it is possible to improve and use a part of the production equipment of transistors using polycrystalline silicon or amorphous silicon, capital investment can be suppressed. Further, since a transistor using a metal oxide has a higher field-effect mobility than when using amorphous silicon, a high-functional display device provided with a drive circuit can be realized.​​​​​​​​​​

[0005] Furthermore, Augmented Reality (AR) or Virtual Reality (VR) As a display device for real-world reality, a wearable display device, and Stationary display devices are becoming more widespread. Wearable display devices include, for example, Head-mounted displays (HMDs) and Examples include glasses-type display devices. Examples of stationary display devices include head-up displays. Examples include displays (HUD: Head-Up Display).

[0006] Furthermore, the image to be captured is provided in an electronic device having an imaging device, such as a digital camera. An electronic viewfinder is used as a viewfinder to check the image before capturing it. The electronic viewfinder is equipped with a display unit, and the imaging device is used. The resulting image can be displayed as an image on the display unit. For example, in Patent Document 2, An electronic viewfinder that can obtain good diopter from the center to the periphery of the image. Information about the instructor has been disclosed. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2014-7399 [Patent Document 2] Japanese Patent Publication No. 2012-42569 [Overview of the project] [Problems that the invention aims to solve]

[0008] In display devices such as head-mounted displays (HMDs), where the distance between the display surface and the user is close. However, this makes it easier for users to see the pixels, and they may perceive a strong grainy texture, which can hinder immersion in AR and VR. The sense of presence and realism may be diminished. Also, electronic viewfinders have optical viewfinders. Similarly, an eyepiece is provided, and the image displayed on the electronic viewfinder's display unit is the eyepiece. It is visible by bringing the user's eye close to the part. For this reason, the electronic viewfinder The distance between the display unit and the user becomes shorter. As a result, the user can see the pixels on the display unit. Because it is easily visible, the granular texture may be perceived more strongly. For the reasons above, H In MD and electronic viewfinders, the pixels are not visible to the user, and the resolution is fine. A display device equipped with pixels is desired. For example, a pixel density of 1000 ppi or more is desired. Preferably, it is 2000 ppi or more, more preferably 5000 ppi or more. And is even more preferable. Also, for example, in a display device provided in an electronic viewfinder For example, 4K (pixel count: 3840 x 2160), 5K (pixel count: 5120 x 2880), and It is preferable that it can display images with a higher resolution.

[0009] On the other hand, as pixel density increases, the transistors provided in the drive circuits such as data driver circuits It is also necessary to install things like T in a high-density integrated manner. However, due to limitations in high-density integration, etc. This could result in the data driver circuit occupying a larger area compared to the display area. This could potentially increase the size of the frame, which is the area where the display is not located.

[0010] One aspect of the present invention aims to provide a display device with a narrow bezel. One aspect of the present invention aims to provide a small display device. One of the objectives of this invention is to provide a display device with a high degree of layout flexibility. One aspect of this invention aims to provide a display device with high pixel density. One embodiment aims to provide a display device capable of displaying high-definition images. Alternatively, one aspect of the present invention provides a display device capable of displaying high-resolution images. One of the challenges is to display a highly realistic image. One objective of the present invention is to provide a display device that can display high-brightness images. Alternatively, one aspect of the present invention is to provide a display device that can display high-brightness images. One objective is to provide a display device capable of displaying the following. Alternatively, one aspect of the present invention One of the objectives of this invention is to provide a display device that operates at high speed. Alternatively, one aspect of the present invention One of the objectives of this invention is to provide a display device with low power consumption. Alternatively, one aspect of the present invention is One of the objectives is to provide a low-cost display device. Alternatively, one aspect of the present invention is reliability One of the objectives is to provide a display device with high performance. Alternatively, one aspect of the present invention relates to a novel display One objective is to provide a device. Alternatively, one aspect of the present invention relates to the operation method of the above-mentioned display device. One objective is to provide a method. Alternatively, one aspect of the present invention relates to an electric device having the above-mentioned display device. One of the objectives is to provide sub-devices.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. The approach does not need to solve all of these problems. This information can be extracted from descriptions in the specification, drawings, claims, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a display device comprising a first layer, a second layer, and a third layer, which are stacked together. The arrangement is such that the first layer has a gate driver circuit and a data driver circuit, and the second The first layer has a demultiplexer circuit, the third layer has a display unit, and the display unit has pixels. Arranged in a matrix, the input terminals of the demultiplexer circuit are connected to the data driver circuit and the power The output terminal of the demultiplexer circuit is electrically connected to the pixel and the gate. The driver circuit has an area that overlaps with the pixel, and the data driver circuit has an area that overlaps with the pixel. The gate driver circuit is a display device having an area that overlaps with the data driver circuit. .

[0013] Alternatively, in the above embodiment, the demultiplexer circuit may have a region that overlaps with the pixel.

[0014] Alternatively, in the above embodiment, the display device has a D / A conversion circuit, and the D / A conversion circuit has a potential It has a generation circuit and a pass transistor logic circuit, and the potential generation circuit is a data dry The pass transistor logic circuit is located outside the main circuit and is located within the data driver circuit. The number of pass transistor logic circuits provided in the D / A conversion circuit is set in the display unit. The number of potential generation circuits provided in the D / A conversion circuit is less than the number of rows of pixels that can be converted. The number of transistor logic circuits is less than the number of potential generation circuits, and the potential generation circuits are of different sizes. Having the function of generating multiple potentials, the pass transistor logic circuit receives image data. Then, based on the digital values ​​of the image data, one of the potentials generated by the potential generation circuit is selected. It may also have an output function.

[0015] Alternatively, in the above embodiment, the number of pass transistor logic circuits is 1 / 2 the number of pixel rows. The following is also acceptable.

[0016] Alternatively, in the above embodiment, the pixel is a transistor having a metal oxide in the channel formation region. The metal oxide contains In, element M (where M is Al, Ga, Y, or Sn), and Zn. It may have.

[0017] Alternatively, in one aspect of the present invention, a first layer, a second layer, and a third layer are laminated together. A display device, wherein the first layer comprises a gate driver circuit and a first data driver circuit. A second data driver circuit, a third data driver circuit, and a fourth data driver circuit The second layer has a fifth data driver circuit and a first demultiplexer circuit. A second demultiplexer circuit, a third demultiplexer circuit, and a fourth demultiplexer It has a sub-circuit and a fifth demultiplexer circuit, and the third layer has a first display unit and a second It has a display unit, a third display unit, a fourth display unit, and a fifth display unit, and the first display unit In the first part, the first pixels are arranged in a matrix, and in the second display part, the second pixels are arranged in a matrix The third display unit has the third pixels arranged in a matrix, and the fourth display unit has the third pixels arranged in a matrix. In the section, the fourth pixels are arranged in a matrix, and in the fifth display section, the fifth pixels are arranged in a matrix. The input terminals of the first demultiplexer circuit are arranged in a cubic shape, and the input terminal of the first data driver circuit The input terminal of the second demultiplexer circuit is electrically connected to the circuit and the second data drive The input terminal of the third demultiplexer circuit is electrically connected to the third data circuit. The input terminal of the fourth demultiplexer circuit is electrically connected to the driver circuit, and the input terminal of the fourth data The input terminal of the fifth demultiplexer circuit is electrically connected to the driver circuit, and the input terminal of the fifth demultiplexer circuit is The output terminal of the first demultiplexer circuit is electrically connected to the data driver circuit. The output terminal of the second demultiplexer circuit is electrically connected to the first pixel and the second pixel. Electrically connected, the output terminal of the third demultiplexer circuit is electrically connected to the third pixel. The output terminal of the fourth demultiplexer circuit is electrically connected to the fourth pixel, The output terminal of the demultiplexer circuit of 5 is electrically connected to the 5th pixel and the gate driver. The circuit has a region that overlaps with the first pixel, and the first data driver circuit has a region that overlaps with the first pixel. Having an overlapping region, the second data driver circuit has an overlapping region with the second pixel, and the third The data driver circuit has a region that overlaps with the third pixel, and the fourth data driver circuit is The fourth pixel has an overlapping region, and the fifth data driver circuit has an overlapping region with the fifth pixel. The gate driver circuit has a region that overlaps with the first data driver circuit. It is a device.

[0018] Alternatively, in the above embodiment, the first demultiplexer circuit has a region that overlaps with the first pixel. Furthermore, the second demultiplexer circuit has a region that overlaps with the second pixel, and the third demultiplexer The lexer circuit has a region that overlaps with the third pixel, and the fourth demultiplexer circuit has a region that overlaps with the fourth The fifth demultiplexer circuit has a region that overlaps with the pixel, and the fifth demultiplexer circuit has a region that overlaps with the fifth pixel. You may do so.

[0019] Alternatively, in the above embodiment, the display device has a D / A conversion circuit, and the D / A conversion circuit has a potential A generating circuit, a first pass transistor logic circuit, and a second pass transistor logic The circuit, the third pass transistor logic circuit, and the fourth pass transistor logic circuit The circuit has a fifth pass transistor logic circuit and a potential generation circuit, and the first to fifth Located outside the data driver circuit, the first pass transistor logic circuit is the first The second pass transistor logic circuit is provided in the data driver circuit, and the second data A third pass transistor logic circuit is provided in the driver circuit, and the third data driver The fourth pass transistor logic circuit is provided in the circuit and is a fourth data driver circuit. The fifth pass transistor logic circuit is provided in the fifth data driver circuit. The number of first pass transistor logic circuits provided in the D / A conversion circuit is, The number of rows of first pixels provided in the display section is less than the number of rows of second pixels provided in the D / A conversion circuit. The number of pass transistor logic circuits is equal to the number of rows of second pixels provided in the second display section. The number of third pass transistor logic circuits provided in the D / A conversion circuit is, The number of pixels in the third display unit is less than the number of pixels in the third display unit, and the number of pixels in the D / A conversion circuit is less than the number of pixels in the third display unit. The number of pass transistor logic circuits in the fourth display unit is equal to the number of pixels in the fourth row of pixels. The number of fifth pass transistor logic circuits provided in the D / A conversion circuit is less than the number of others. This is less than the number of rows of the fifth pixel provided in the fifth display unit, and is provided in the D / A conversion circuit. The number of potential generation circuits is less than the number of first pass transistor logic circuits, D / The number of potential generation circuits provided in the A conversion circuit is equal to the number of the second pass transistor logic circuit. The number of potential generation circuits provided in the D / A conversion circuit is less than the number of third path transistors. The number of potential generation circuits provided in the D / A conversion circuit is less than the number of ZISTA logic circuits. This is less than the number of fourth pass transistor logic circuits and is provided in the D / A conversion circuit. The number of potential generation circuits is less than the number of fifth pass transistor logic circuits, The generating circuit has the function of generating multiple potentials of different magnitudes, and the first to fifth phases The transistor logic circuit receives image data and uses the digital value of the image data as a basis. The circuit may also have a function to output one of the potentials generated by the potential generation circuit.

[0020] Alternatively, in the above embodiment, the number of first pass transistor logic circuits is equal to the number of first pixels. The number of second pass transistor logic circuits is less than or equal to half the number of columns, and the number of second pixels is less than or equal to the number of second pixels. The number of third pass transistor logic circuits is less than or equal to half the number of columns, and the number of third pixels is less than or equal to the number of third pixels. The number of columns is less than or equal to half, and the number of fourth pass transistor logic circuits is equal to the number of fourth pixels. The number of the fifth pass transistor logic circuits is less than or equal to half the number of columns, and the number of the fifth pixel is The number of columns may be less than or equal to half the number of columns.

[0021] Alternatively, in the above embodiment, the first to fifth pixels have a metal oxide in the channel forming region. The transistor has a metal oxide in which In and element M (where M is Al, Ga, Y, or Sn) ) and Zn may be present. [Effects of the Invention]

[0022] According to one aspect of the present invention, a display device with a narrow bezel can be provided. Alternatively, the present invention In one embodiment, a small display device can be provided. Or, in one embodiment of the present invention, A display device with a high degree of layout flexibility can be provided. Alternatively, according to one aspect of the present invention... This makes it possible to provide a display device with high pixel density. Alternatively, according to one aspect of the present invention, A display device capable of displaying high-resolution images can be provided. Or, the present invention can provide a display device capable of displaying high-resolution images. Depending on the configuration, a display device capable of displaying high-quality images can be provided. According to one aspect of the present invention, a display device capable of displaying highly realistic images is provided. It is possible to display a high-brightness image using a table according to one aspect of the present invention. A display device can be provided. Alternatively, according to one aspect of the present invention, a high-speed operating display device can be provided. It is possible to provide a display device with low power consumption according to one aspect of the present invention. It is possible to provide a low-cost display device according to one aspect of the present invention. It is possible. Alternatively, according to one aspect of the present invention, a highly reliable display device can be provided. According to one aspect of the present invention, a novel display device can be provided. Or, according to one aspect of the present invention Depending on the embodiment, a method for operating the above-mentioned display device can be provided. Or, in one embodiment of the present invention Therefore, an electronic device having the above-mentioned display device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... It is possible to extract this information from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0024] [Figure 1] Figure 1A is a block diagram showing an example of the configuration of a display device. Figure 1B is a schematic diagram showing an example of the configuration of a display device. [Figure 2] Figure 2 is a block diagram showing an example of a display device configuration. [Figure 3]Figure 3 is a block diagram showing an example of a display device configuration. [Figure 4] Figures 4A to 4C are circuit diagrams showing examples of pixel configurations. [Figure 5] Figure 5 is a timing chart showing an example of how the display device operates. [Figure 6] Figure 6 is a block diagram showing an example of a display device configuration. [Figure 7] Figure 7 is a block diagram showing an example of a display device configuration. [Figure 8] Figure 8 is a block diagram showing an example of a display device configuration. [Figure 9] Figure 9 is a block diagram showing an example of a display device configuration. [Figure 10] Figure 10 is a block diagram showing an example of a display device configuration. [Figure 11] Figure 11 is a block diagram showing an example of a display device configuration. [Figure 12] Figure 12 is a block diagram showing an example of a display device configuration. [Figure 13] Figure 13 is a circuit diagram showing an example of a D / A conversion circuit configuration. [Figure 14] Figure 14 is a block diagram showing an example of a gate driver circuit configuration. [Figure 15] Figure 15A is a block diagram showing an example of a register circuit configuration. Figure 15B is a circuit diagram showing an example of a register circuit configuration. [Figure 16] Figure 16 is a schematic diagram showing the arrangement of the gate driver circuit and the data driver circuit. [Figure 17] Figure 17 is a top view showing an example configuration of a gate driver circuit and a data driver circuit. [Figure 18] Figure 18 is a cross-sectional view showing an example of the configuration of a display device. [Figure 19] Figure 19 is a cross-sectional view showing an example of the configuration of a display device. [Figure 20] Figure 20 is a cross-sectional view showing an example of the configuration of a display device. [Figure 21] Figure 21 is a cross-sectional view showing an example of the configuration of a display device. [Figure 22] Figure 22 is a cross-sectional view showing an example of the configuration of a display device. [Figure 23] Figure 23 is a cross-sectional view showing an example of the configuration of a display device. [Figure 24] Figures 24A and 24B are top views showing examples of pixel configurations. [Figure 25] Figure 25 is a top view showing an example of pixel configuration. [Figure 26] Figure 26 is a cross-sectional view showing an example of pixel configuration. [Figure 27] Figures 27A to 27E show examples of the configuration of a light-emitting element. [Figure 28] Figure 28A is a top view showing an example of a transistor configuration. Figures 28B and 28C are cross-sectional views showing an example of a transistor configuration. [Figure 29] Figure 29A is a top view showing an example of a transistor configuration. Figures 29B and 29C are cross-sectional views showing an example of a transistor configuration. [Figure 30] Figure 30A is a top view showing an example of a transistor configuration. Figures 30B and 30C are cross-sectional views showing an example of a transistor configuration. [Figure 31] Figure 31A illustrates the classification of IGZO crystal structures. Figure 31B illustrates the XRD spectrum of a CAAC-IGZO film. Figure 31C illustrates the micro-electron diffraction pattern of a CAAC-IGZO film. [Figure 32] Figures 32A to 32E are perspective views showing examples of electronic devices. [Figure 33] Figures 33A to 33G are perspective views showing examples of electronic devices. [Modes for carrying out the invention]

[0025] The embodiments will be described below with reference to the drawings. However, many of the embodiments differ. It is possible to implement it in any manner, without deviating from its purpose and scope. It will be easily understood by those skilled in the art that the details can be changed in various ways. The Specification shall not be interpreted as being limited to the contents of the following embodiments.

[0026] Furthermore, in each figure described herein, the size of each component, the thickness of the layer, or the area is clearly indicated. It may be exaggerated for illustrative purposes.

[0027] Furthermore, the ordinal numbers "1st," "2nd," and "3rd" used in this specification refer to the combination of constituent elements. This was added to avoid ambiguity and does not limit the number.

[0028] Furthermore, in this specification, terms indicating placement such as "above" and "below" refer to the positional relationship between components. The terms are used for convenience when explaining with reference to the diagrams. Also, the positional relationships between the components are as follows: , and changes appropriately depending on the direction in which each component is described. Therefore, as explained in the specification... It is not limited to the same words or phrases, and can be appropriately rephrased depending on the situation.

[0029] Furthermore, in this specification, the source and drain functions of a transistor are defined as the transistor The polarity of the terminals, or the direction of the current during circuit operation, can be reversed. Therefore, the terms source and drain may be used interchangeably.

[0030] In this specification, terms such as "electrode," "wiring," and "terminal" refer to these components functionally. It is not limited to this. For example, "electrode" can be used as part of "wiring". And the reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and This also includes cases where the "wiring" is formed as an integral part. Furthermore, for example, "terminals" are "wiring". It can also be used as part of an "electrode," and vice versa. Furthermore, it can be used as a "terminal." The term "electrode," "wiring," "terminal," etc., can also be used when multiple electrodes, wires, terminals, etc., are formed as a single unit. This includes, for example, an "electrode" can be part of a "wiring" or "terminal". For example, a "terminal" can be part of a "wiring" or an "electrode." Terms such as "wiring" and "terminals" may be replaced with terms such as "area" depending on the context. ru.

[0031] Furthermore, in this specification, the resistance value of "resistance" may be determined by the length of the wiring. Alternatively, the resistance value may be determined by connecting to a conductor having a different resistivity than the conductor used in the wiring. In some cases, the resistance is determined by [specific method]. Alternatively, the resistance value can be determined by doping the semiconductor with impurities. There are cases where this is the case.

[0032] Furthermore, in this specification, "electrically connected" refers to both a direct connection and a "some kind of connection". This includes cases where the connection is made via "some kind of electric device". "A device that has a gaseous effect" is one that enables the exchange of electrical signals between connected objects. There are no particular restrictions. Therefore, even when it is expressed as "electrically connected," in reality In some circuits, there are no physical connections, and only wiring extends. Furthermore, even when described as "direct connection," different conductors are connected via contacts. This includes cases where different conductors contain one or more of the same element. There are cases where it contains different elements.

[0033] Furthermore, in this specification, the terms "membrane" and "layer" are interchangeable. It is possible to do so. For example, the terms "conductive layer" and "insulating layer" are similar to "conductive film" and " In some cases, the term "insulating film" can be used interchangeably.

[0034] Furthermore, unless otherwise specified in this specification, off-current refers to the state in which a transistor is in the off state. This refers to the drain current when the device is in a non-conductive state (also called a closed state). Unless otherwise specified, in an n-channel transistor, the voltage between the gate and source is V g s The threshold voltage V th Lower than (in p-channel transistors, V th Higher ) refers to a state.

[0035] Furthermore, in drawings, the size, layer thickness, or area may be exaggerated for clarity. There is a possibility of compatibility. Therefore, it is not necessarily limited to that scale. Note that the drawing is modeled after an ideal example. This is a formulaic representation and is not limited to the shapes or values ​​shown in the drawings. For example, in actual manufacturing During the manufacturing process, layers, resist masks, etc., may be unintentionally reduced due to processes such as etching. While this may sometimes be the case, it is not always reflected in the diagrams for the sake of ease of understanding. Also, in the drawings... The same reference numeral is used across different drawings for parts that are identical or have similar functions, materials, etc. It is used in this way, and the explanation of its repetition may be omitted. Also, when referring to similar functions, materials, etc. In some cases, the hatch patterns are the same, and no specific designation is assigned.

[0036] In this specification, metal oxide refers to metals in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called OS) etc. They are classified. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide It is sometimes referred to as an oxide semiconductor. In other words, when it is written as an OS transistor, Therefore, it can be rephrased as a transistor having an oxide or oxide semiconductor.

[0037] (Embodiment 1) This embodiment describes a display device that is one aspect of the present invention.

[0038] One aspect of the present invention is a display device comprising a first layer, a second layer, and a third layer, which are stacked together. Regarding the arrangement, the first layer has a gate driver circuit and a data driver circuit, and the second The first layer has a demultiplexer circuit, and the third layer has a display unit. The display unit has pixels These are arranged in a matrix. The gate driver circuit and data driver circuit are displayed It is provided to have an area that overlaps with the part. This narrows the display device of one aspect of the present invention. It can be framed and miniaturized.

[0039] Furthermore, the gate driver circuit and the data driver circuit are not clearly separated and have overlapping areas. This will further narrow the bezel of the display device compared to the case where the overlapping area does not exist. It can be made smaller and more compact.

[0040] Here, the gate driver circuit and data driver circuit are configured so as not to overlap with the display unit. In this case, the gate driver circuit and the data driver circuit are provided, for example, on the outer periphery of the display unit. In this case, providing more than 2 rows and 2 columns of display space is necessary for the data driver circuit. It is difficult from the standpoint of the installation location, etc. On the other hand, in a display device according to one aspect of the present invention, the gate driver By placing the circuit and data driver circuit on a different layer from the layer on which the display unit is located, Therefore, it can be provided so as to have an area that overlaps with the display section. A display unit can be provided. In other words, a display device according to one aspect of the present invention includes a gate drive Five or more input circuits and five or more data driver circuits can be provided.

[0041] As described above, the gate driver circuit and the data driver circuit have an area that overlaps with the display unit. By providing the gate driver circuit and data driver circuit in such a configuration, they overlap with the display unit. For example, it can operate at a higher speed than a display device with a configuration that does not allow for this. Therefore, the present invention In one embodiment, the pixel density of a display device is determined by a gate driver circuit and a data driver circuit in relation to the display unit. This can be improved compared to display devices with non-overlapping configurations. For example, a display device according to one aspect of the present invention. The pixel density can be set to 1000 ppi or more, and to 2000 ppi or more. Furthermore, it can be set to 5000 ppi or more. Thus, the display device according to one embodiment of the present invention It can display high-resolution images.

[0042] Here, increasing the pixel density of the display device according to one aspect of the present invention increases the performance of the data driver circuit and other components. Transistors and other components in the dynamic circuit also need to be densely integrated. Due to limitations in high-density integration and other reasons, the data driver circuit occupies a large area relative to the display area. The area may increase. This will prevent the data driver circuit from overlapping with the display unit. The area of ​​the non-display portion becomes larger, and therefore the frame, which is the area where the display portion is not provided, becomes larger. It may become worse.

[0043] On the other hand, in one aspect of the present invention, a display device is provided with a demultiplexer circuit in the second layer as described above. The input terminal of the demultiplexer circuit is electrically connected to the data driver circuit. The output terminal of the demultiplexer circuit is electrically connected to the pixel. Specifically, the demultiplexer When a ticplexer circuit has a first output terminal and a second output terminal as output terminals, The first output terminal and the second output terminal are electrically connected to pixels in different rows. As a result, the demultiplexer circuit supplies the image data generated by the data driver circuit. It can have a function to switch the destination. Therefore, the configuration of the data driver circuit can be simplified. It can be made into this. Specifically, for example, the transistors that the data driver circuit has This reduces the number of elements such as TAs. This reduces the area occupied by the data driver circuit. It can be made smaller. Therefore, the portion of the data driver circuit that does not overlap with the display unit. The area can be reduced. This allows for a narrower bezel in one embodiment of the present invention. It is possible.

[0044] The demultiplexer circuit is located in the layer where the data driver circuit is provided, as described above, and the display section It is placed on a layer different from any of the layers where it is placed. This increases the flexibility of the layout. While increasing performance, the demultiplexer circuit can be provided so that it overlaps with the display unit. Therefore, for example, the demultiplexer circuit is placed on the same layer as the data driver circuit. Depending on the circumstances, the display device according to one embodiment of the present invention can be made even narrower and smaller. It is possible.

[0045] <Example configuration of display device 10 1> Figure 1A is a block diagram showing an example configuration of a display device 10, which is a display device according to one aspect of the present invention. The display device 10 includes a gate driver circuit 21, a data driver circuit 22, and a circuit 40. , has . In addition, the display device 10 has a pixel 34 with m rows and n columns (m and n are integers of 1 or more). It has display units 33 arranged in a trix pattern. Furthermore, the display device 10 is a demultiplexer It has a circuit 81.

[0046] In this specification, when the same reference numeral is used for multiple elements, it is particularly necessary to distinguish between them. When there is a symbol, the code may have identifying characters such as "_1", "_2", "[n]", "[m,n]". In some cases, symbols may be added to the notation. For example, pixel 34 in the first row and first column is notated as pixel 34[1,1 ] is written as such, and pixel 34 in the mth row and nth column is written as pixel 34[m,n].

[0047] The data driver circuit 22 connects to the input terminal of the demultiplexer circuit 81 via wiring 82. They are electrically connected. Also, the selection control signal input terminal of the demultiplexer circuit 81 is connected to wiring 8 It is electrically connected to 3. Furthermore, the demultiplexer circuit 81 has multiple output terminals, These multiple output terminals are electrically connected to the pixels 34 via different wiring 32.

[0048] In this specification, etc., when we refer to the "output terminal of the demultiplexer circuit", we mean the demultiplexer This may refer to one of the multiple output terminals of a circuit. For example, "The wiring is a hoax." In the case where it is electrically connected to the output terminal of the lutiplexer circuit, the wiring is multiple It may be electrically connected to one of the output terminals.

[0049] The gate driver circuit 21 is electrically connected to the pixel 34 via wiring 31. Circuit 40 is electrically connected to the data driver circuit 22. It may be electrically connected to circuits, etc.

[0050] In Figure 1A, pixels 34 in the same column are electrically connected to the same wiring 32, and pixels 34 in the same row This shows a configuration in which the same wiring 31 is electrically connected. In this specification, for example, The wiring 32 electrically connected to the first row of pixels 34 is denoted as wiring 32[1], and the nth row of pixels The wiring 32 that is electrically connected to element 34 is denoted as wiring 32[n]. Also, for example, the first line The wiring 31 electrically connected to the pixel 34 is denoted as wiring 31[1], and the pixel 34 of the mth row The wiring 31 that is electrically connected to it will be described as wiring 31[m].

[0051] The data driver circuit 22 has the function of generating image data. The image data is routed through wiring 8 It is supplied to the demultiplexer circuit 81 via 2.

[0052] The demultiplexer circuit 81 processes the image data input from the input terminal into the selection control signal input. Depending on the signal input to the terminal, that is, depending on the potential of the wiring 83, of the multiple output terminals It has the function of outputting from one of the following. For example, the demultiplexer circuit 81 is the first output It has a power terminal and a second output terminal, and the selection control signal is a 1-bit digital signal. In addition, if the selection control signal is at a high potential, the input image data is output from the first output terminal. This is possible. On the other hand, if the selection control signal is at a low potential, the demultiplexer circuit 81 The image data input to the second output terminal can be output from the second output terminal. If the voltage is low, the image data input to the demultiplexer circuit 81 is output to the first output Output can be output from the terminal, and if the potential is high, output may be output from the second output terminal.

[0053] As described above, the image data input to the demultiplexer circuit 81 is output to wiring 32. It is then supplied to the pixel 34. Therefore, the wiring 32 has the function of a data line. can.

[0054] As mentioned above, the demultiplexer circuit 81 has multiple output terminals, and each output terminal It can be electrically connected to a single wire 32. Therefore, the display device 10 has a dem The number of ticplexer circuits 81 can be less than n, which is the number of rows of pixels 34. For example The demultiplexer circuit 81 has a first output terminal and a second output terminal as output terminals. If it has this feature, the display device 10 can have n / 2 demultiplexer circuits 81. Furthermore, the demultiplexer circuit 81 has a first output terminal and a second output terminal as output terminals. If it has a child and a third output terminal, the display device 10 has n / 3 demultiplexer cycles. It may have a path 81. Also, the demultiplexer circuit 81 may have a first output terminal. If the display device 10 has output terminals up to the kth (where k is an integer between 2 and n), then n / k units It can have a demultiplexer circuit 81.

[0055] The number of bits in the selection control signal corresponds to the number of output terminals of the demultiplexer circuit 81. It can be a number of . For example, the demultiplexer circuit 81 is the first to fourth output terminal If there are children, the selection control signal can be a 2-bit digital signal. For example, If the demultiplexer circuit 81 has output terminals from the first to the kth, the selection control signal is lo It can be expressed as a g2(k) bit digital signal.

[0056] In Figure 1A, the demultiplexer circuit 81 has a first output terminal and a second output terminal as output terminals. This shows the case where there are power terminals. In this case, as mentioned above, the display device 10 has n / 2 units. It can have a demultiplexer circuit 81.

[0057] In this specification, a plurality of demultiplexer circuits 81 are defined as demultiplexer circuits 81[ 1], demultiplexer circuit 81[2], etc. are used to distinguish them. For example, n / 2 The demultiplexer circuit 81 is connected to the demultiplexer circuit 81[1] or the demultiplexer circuit They are distinguished from each other by being labeled as path 81[n / 2]. For example, demultiplexer circuit 8 Wiring 82 that is electrically connected to the input terminal of 1[1] is denoted as wiring 82[1], and demulti Wiring 83 is electrically connected to the selection control signal input terminal of the Plexor circuit 81[1]. It is written as 3[1]. Also, for example, the input terminal of the demultiplexer circuit 81[n / 2] and The wire 82 that is electrically connected is denoted as wire 82[n / 2], and the demultiplexer circuit 81[ The wiring 83 is electrically connected to the n / 2] selection control signal input terminal and wiring 83[n / 2] To include.

[0058] The gate driver circuit 21 receives the data corresponding to the image data generated by the data driver circuit 22. It has a function to select the pixel 34 on which the position is written. For example, the gate driver circuit 21 A selection signal can be generated and supplied to the pixels 34 of a specific row. A potential corresponding to the image data can be written to the pixel 34 to which the selection signal is supplied.

[0059] Here, the gate driver circuit 21, for example, selects the pixels 34 of the first row, and then the pixels of the second row. Select 34, then sequentially select pixels 34 in row m, and then select pixel 34 in row 1 again. In other words, the gate driver circuit 21 has the function of scanning the pixels 34. Furthermore, the selection signal is supplied from the gate driver circuit 21 to the pixel 34 via wiring 31. Therefore, it can be said that wiring 31 has the function of a scanning line. Note that when performing interlaced drive, after selecting pixel 34 in the first row, then the pixels in the second row... Instead of selecting 34, select pixel 34 in the 3rd row, or the 4th row or later. For example, m is even To select a number, sequentially select pixels 34 in odd-numbered rows, then sequentially select pixels 34 in even-numbered rows. It is possible.

[0060] Circuit 40, for example, processes the data that forms the basis of the image data generated by the data driver circuit 22. It has the function of receiving data and supplying the received data to the data driver circuit 22. 40 has the function of a control circuit that generates a start pulse signal and a clock signal, etc. In addition, circuit 40 has a gate driver circuit 21 and a data driver circuit 22. It can be made into a circuit that has no function.

[0061] The display unit 33 has the function of displaying an image corresponding to the image data supplied to the pixels 34. Specifically, by emitting light with a brightness corresponding to the image data from pixel 34, the display is displayed. An image is displayed in section 33.

[0062] The color of the light emitted from pixel 34 can be, for example, red, green, blue, etc. For example, a pixel 34 that emits red light, a pixel 34 that emits green light, and a pixel 34 that emits blue light By providing the output pixels 34 on the display unit 33, the display device 10 performs full-color display. It is possible to do so. In this case, pixel 34 can be said to be a sub-pixel.

[0063] Figure 1B is a schematic diagram showing an example configuration of the display device 10. As shown in Figure 1B, the display device 1 Layer 0 can be a stacked structure consisting of layer 20, layer 80, and layer 30. In Figure 1B, layer 2 This shows a configuration in which layer 80 is provided above layer 0, and layer 30 is provided above layer 80. An interlayer insulating layer can be provided between layers 80 and between layer 80 and layer 30. The stacking order of layer 0, layer 80, and layer 30 is not limited to that shown in Figure 1B. For example, on top of layer 30 A layer 80 may be provided on one side, and a layer 20 may be provided above the layer 80.

[0064] Layer 20 includes, for example, a gate driver circuit 21, a data driver circuit 22, and a circuit 40. For example, a demultiplexer circuit 81 can be provided in layer 80. Layer 30 can be provided with, for example, a display unit 33. Here, layer 20 is provided The gate driver circuit 21, data driver circuit 22, and circuit 40, etc., control the display device 10. These are the circuits necessary to drive the device. Therefore, these circuits can be called drive circuits. The demultiplexer circuit 81 may also be called the drive circuit.

[0065] Figure 2 shows an example of the configuration of layers 20, 80, and 30 shown in Figure 1B. In Figure 2, The positional relationship between layer 20 and layer 30 is shown by a dashed line and a white circle, and the dashed line connects them. The white circle in layer 20 and the white circle in layer 30 overlap each other. However, the same notation is used.

[0066] The display device 10 includes a gate driver circuit 21 and a data driver circuit 2 provided in layer 20. 2 has an area that overlaps with the display unit 33. For example, the gate driver circuit 21 and data The gate driver circuit 22 has an area that overlaps with the pixel 34. The data driver circuit 22 and the display unit 33 are stacked so that they have overlapping regions. By providing it in this way, the area of ​​the frame, which is the area where the display unit 33 is not provided, can be reduced. This is possible. Therefore, the display device 10 can have a narrow bezel. Also, the display device 10 By narrowing the bezel, the display device 10 can be made smaller.

[0067] Furthermore, the gate driver circuit 21 and the data driver circuit 22 are not clearly separated, but overlap. It has a region. This region is called region 23. Having region 23 allows the gate drive The combined area occupied by the driver circuit 21 and the data driver circuit 22 can be reduced. Even if the area of ​​the display unit 33 is small, the gate driver circuit 21 and the data driver The IBA circuit 22 can be provided without protruding from the display unit 33. Alternatively, gated The area of ​​the driver circuit 21 and the data driver circuit 22 that do not overlap with the display unit 33 is reduced. This can be done. Therefore, the display device 10 can be made even narrower than when it does not have area 23. It can be framed and miniaturized.

[0068] Here, by configuring the display device 10 to have a demultiplexer circuit 81, the data The driver circuit 22 simultaneously supplies image data to pixels 34 in the first to nth rows. It becomes unnecessary to generate it. For example, the demultiplexer circuit 81 has a first output terminal. It has an output terminal and a second output terminal, and odd-numbered wiring 32 is connected to the first output terminal. When they are connected in a specific way, and the wiring 32 in an even-numbered row is electrically connected to the second output terminal. Let's consider this. In this case, the data driver circuit 22 supplies image data to the odd-numbered pixels 34. After generating the data, you just need to generate the image data to supply to the even-numbered pixels 34. Therefore, the amount of data generated at one time by the data driver circuit 22 can be reduced, The configuration of the data driver circuit 22 can be simplified. Specifically, for example, This allows for a reduction in the number of transistors and other elements in the driver circuit 22. This reduces the area occupied by the data driver circuit 22. Therefore, the table Even if the area of ​​the display unit 33 is small, the data driver circuit 22 does not extend beyond the display unit 33. The output can be suppressed. Alternatively, the data driver circuit 22 overlaps with the display unit 33. The area of ​​the unused region can be reduced. Therefore, the display device 10 can be made with a narrower bezel. This allows for miniaturization.

[0069] Furthermore, the demultiplexer circuit 81 is located on the layer where the data driver circuit 22 is provided, and the display It is provided on a layer different from any of the layers on which section 33 is provided. This allows for flexible layout. While increasing flexibility, the demultiplexer circuit 81 is configured to have an area that overlaps with the display unit 33. For example, the demultiplexer circuit 81 has an area that overlaps with the pixel 34. It can be configured in this way. For this reason, for example, the demultiplexer circuit 81 is used in the data drive By providing the circuit 22 in the layer 20, the bezel of the display device 10 can be made even narrower. This allows for miniaturization. Furthermore, the resistance of wiring 82 and the resistance of wiring 32 are From the perspective of suppressing signal delays caused by these delays, the lengths of wiring 82 and wiring 32 should be as short as possible. It is preferable that it be as short as possible. For this reason, the demultiplexer circuit 81 is connected to the data driver circuit 2 It is preferable to provide it so as to have an area that overlaps with 2.

[0070] The circuit 40 can be installed so as not to overlap with the display unit 33. It may be provided so as to have an area that overlaps with the indicator 33.

[0071] Furthermore, the gate driver circuit 21 and / or circuit 40 may be provided in layer 80. When the driver circuit 21 is provided in layer 80, the gate driver circuit 21 and the demultiplexer Circuit 81 and the other may have overlapping regions that are not clearly separated.

[0072] <Example configuration of circuit 40 and data driver circuit 22> Figure 3 is a block diagram showing an example configuration of circuit 40 and data driver circuit 22. In Figure 3, as shown in Figures 1A and 2, the demultiplexer circuit 81 has two output terminals. This shows the case where the display device 10 has n / 2 demultiplexer circuits 81.

[0073] Circuit 40 includes a receiving circuit 41, a serial-to-parallel conversion circuit 42, and a potential generation circuit 46a. , has. Note that circuit 40 can be equipped with various other circuits besides the above circuit. For example, The circuit 40 has a function to generate a start pulse signal and a clock signal, etc. A circuit can be installed.

[0074] The data driver circuit 22 includes a buffer circuit 43, a shift register circuit 44, and a latch circuit. It has a path 45, a pass transistor logic circuit 46b, and an amplifier circuit 47. Then, the latch circuit 45, the pass transistor logic circuit 46b, and the amplifier circuit 47 are The same number of multiplexer circuits 81 can be provided. Figure 3 shows the data driver circuit 22 has one shift register circuit 44, a latch circuit 45, and a pass transistor logic This shows the case where there are n / 2 of each of the circuit 46b and the amplifier circuit 47. In the specification, for example, n / 2 latch circuits 45, pass transistor logic circuit 4 6b and the amplifier circuit 47 are connected to latch circuit 45[1] to latch circuit 45[n / 2], pass transistor logic circuit 46b[1] or pass transistor logic circuit 4 6b[n / 2], and amplifier circuits 47[1] to 47[n / 2] are used to distinguish them. Here, for example, the data driver circuit 22 passes through the transistor logic circuit 46b. When there are n / 2 of them, the potential generation circuit 46a and the pass transistor logic circuit 46b[ 1) A pass transistor logic circuit 46b[n / 2] and a D / A (Digit An analog to analog conversion circuit 46 is formed.

[0075] The receiving circuit 41 receives the data that forms the basis of the image data generated by the data driver circuit 22. It has the function of doing so. The data can be single-ended digital data. The receiving circuit 41 is LVDS (Low Voltage Differential S When receiving data using data transmission signals such as ignition, internal processing is possible. It may also have a function to convert to a signal standard.

[0076] The serial-to-parallel conversion circuit 42 receives the single-ended data output by the receiving circuit 41. It has a function to perform parallel conversion. A serial-to-parallel conversion circuit 42 is provided in circuit 40. As a result, the load during data transmission from circuit 40 to data driver circuit 22, etc. is large. Furthermore, it becomes possible to transmit data, etc., from circuit 40 to data driver circuit 22, etc. ru.

[0077] The buffer circuit 43 can be, for example, a unity-gain buffer. Buffer circuit 43 outputs the same data as the data output from the serial-to-parallel conversion circuit 42. It has the function. By providing a buffer circuit 43 in the data driver circuit 22, serial The potential corresponding to the data output from the parallel conversion circuit 42 is transmitted from the circuit 40. Even if the signal level drops due to wiring resistance etc. when transmitted to the driver circuit 22, the reduced amount will be recovered. This allows data to be transmitted from circuit 40 to data driver circuit 22, etc. Even when the load during transmission is high, the reduction in the driving capability of the data driver circuit 22, etc. is suppressed. It is possible.

[0078] The shift register circuit 44 has the function of generating signals to control the operation of the latch circuit 45. The latch circuit 45 holds or outputs the data output by the buffer circuit 43. It has the ability to either hold or output data in the latch circuit 45. The selection is made based on the signal supplied from the shift register circuit 44.

[0079] The D / A conversion circuit 46 converts the digital data output by the latch circuit 45 into analog image data. It has the function of converting to data. The potential generation circuit 46a has the function of converting bits of data that can be converted to D / A. This function generates different types of potentials according to the number of units and supplies them to the pass transistor logic circuit 46b. It has. For example, the D / A conversion circuit 46 converts 8-bit digital data to analog image data. If it has the function of converting to a certain type, the potential generation circuit 46a has 256 types of different sizes It can generate a type of potential.

[0080] The pass transistor logic circuit 46b receives data from the latch circuit 45, and the received Based on the digital values ​​of the data, one of the potentials generated by the potential generation circuit 46a is analyzed. It has the function of outputting as a log signal. For example, the larger the digital value of the data, the more likely it is to pass. The potential output by the transistor logic circuit 46b can be increased.

[0081] As shown in Figure 3, in the display device 10, the circuits constituting the D / A conversion circuit 46 are data drives The Iba circuit can be configured to be distributed between circuit 22 and circuit 40. Specifically, Past It is preferable to provide one for each data driver circuit, such as the Rangitor logic circuit 46b. The circuit is provided in the data driver circuit 22, and is a data driver such as the potential generation circuit 46a. Circuits that do not need to be provided in each circuit can be provided in circuit 40. For example, the number of potential generation circuits 46a in the display device 10 is determined by the pass transistor logic The number of circuits 46b can be reduced. Therefore, the data driver circuit 22 has less space. The area can be reduced. Therefore, when the area of ​​the display unit 33 is small, Furthermore, it is possible to suppress the data driver circuit 22 from protruding from the display unit 33. This reduces the area of ​​the data driver circuit 22 that does not overlap with the display unit 33. Yes, it is possible. Therefore, the display device 10 can be made with a narrower bezel and also miniaturized. Here, in circuits other than the D / A conversion circuit 46, the components of the said circuit are also used as data. The driver circuit can be configured to be distributed between the driver circuit 22 and the circuit 40.

[0082] The amplifier circuit 47 amplifies the analog signal output by the pass transistor logic circuit 46b. It has the function of outputting to wiring 82. By providing the amplifier circuit 47, The image data represented by the signal is to be stably supplied to the demultiplexer circuit 81. Yes, it is possible. For the amplifier circuit 47, a voltage follower circuit with an operational amplifier, etc., can be used. It can be used. Furthermore, when using a circuit with a differential input circuit as the amplifier circuit, It is preferable that the offset voltage of the differential input circuit be as close to 0V as possible.

[0083] If the display device 10 does not have a demultiplexer circuit 81, the data driver circuit 22 is an example For example, the latch circuit 45, the pass transistor logic circuit 46b, and the amplifier circuit 47 are used. It is necessary to have a configuration with n of each. On the other hand, the display device 10 is a demultiplexer circuit If 81 is present, as shown in Figure 3, the data driver circuit 22 is, for example, a latch circuit 45, It has n / 2 pass transistor logic circuits 46b and n / 2 amplifier circuits 47. This configuration can be achieved. As a result, the latch circuit 4 of the data driver circuit 22 5. The number of pass transistor logic circuits 46b and amplifier circuits 47 can be reduced. Specifically, the latch circuit 45 and pass transistor of the data driver circuit 22. The number of logic circuits 46b and amplifier circuits 47 is made less than the number of rows n of pixels 34. This makes it possible to, for example, the elements such as transistors in the data driver circuit 22 This reduces the number of components, thereby reducing the occupied area of ​​the data driver circuit 22. Therefore, even if the area of ​​the display unit 33 is small, the data driver circuit This can prevent 22 from protruding from the display unit 33. Alternatively, the data driver circuit The area of ​​the region 22 that does not overlap with the display unit 33 can be reduced. The device 10 can be made with a narrower bezel and also miniaturized.

[0084] Here, Figure 3 shows the case where the demultiplexer circuit 81 has two output terminals. If the lutiplexer circuit 81 has three or more output terminals, the data driver circuit 22 has The number of latch circuits 45, pass transistor logic circuits 46b, and amplifier circuits 47 This can be reduced even further. This will further reduce the area occupied by the data driver circuit 22. It can be cut.

[0085] <Example of a 34-pixel configuration> Figures 4A and 4B are circuit diagrams showing example configurations of pixel 34. Pixel 34 configuration shown in Figure 4A 4 comprises a liquid crystal element 570, a transistor 550, and a capacitive element 560. In the pixel 34 with the configuration shown in Figure 4A, if the capacitance of the liquid crystal element 570 etc. is sufficiently large, Therefore, it is not necessary to provide the capacitive element 560.

[0086] Either the source or drain of transistor 550 is electrically connected to one electrode of liquid crystal element 570. They are connected electrically. One electrode of the liquid crystal element 570 is electrically connected to one electrode of the capacitive element 560. The source or drain of transistor 550 is electrically connected to wiring 32. The gate of transistor 550 is electrically connected to wiring 31. Capacitive element The other electrode of the capacitor 560 is electrically connected to the wiring 35. Note that one of the source or drain of the transistor 550, one of the electrodes of the liquid crystal element 570, and one of the electrodes of the capacitor 560 are connected to a node called node FD. The potential of the other electrode of the liquid crystal element 570 is appropriately set according to the specifications of the pixel 34. The liquid crystal element 570 has its alignment state set by the image data written into the pixel 34. Note that a common potential (common potential ) may be supplied to the other electrodes of the liquid crystal elements 570 each pixel 34 has. Also, different potentials may be supplied to the other electrodes of the liquid crystal elements 570 of the pixels 34 in each row.

[0087] The potential of the other electrode of the liquid crystal element 570 is appropriately set according to the specifications of the pixel 34. The liquid crystal element 570 has its alignment state set by the image data written into the pixel 34. Note that a common potential (common potential ) may be supplied to the other electrodes of the liquid crystal elements 570 each pixel 34 has. Also, different potentials may be supplied to the other electrodes of the liquid crystal elements 570 of the pixels 34 in each row. The potential of the other electrode of the liquid crystal element 570 is appropriately set according to the specifications of the pixel 34. The liquid crystal element 570 has its alignment state set by the image data written into the pixel 34. Note that a common potential (common potential ) may be supplied to the other electrodes of the liquid crystal elements 570 each pixel 34 has. Also, different potentials may be supplied to the other electrodes of the liquid crystal elements 570 of the pixels 34 in each row. The potential of the other electrode of the liquid crystal element 570 is appropriately set according to the specifications of the pixel 34. The liquid crystal element 570 has its alignment state set by the image data written into the pixel 34. Note that a common potential (common potential

[0088] Also, the pixel 34 with the configuration shown in FIG. 4B has a transistor 552, a transistor 554, a capacitor element 562, and a light emitting element 572. Note that if the gate capacitance etc. of the transistor 554 is large enough, the capacitor element 562 may not be provided. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b.

[0089] One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring ------------- 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 32. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. One of the source or drain of the transistor 552 is electrically connected to the gate of the transistor 554. The gate of the transistor 554 is electrically connected to one of the electrodes of the capacitor element 562. One of the source or drain of the transistor 554 is electrically connected to one of the electrodes of the light emitting element ******** 572. The other of the source or drain of the transistor 552 is electrically connected to the wiring 3"2. The gate of the transistor 552 is electrically connected to the wiring 31. The other of the source or drain of the transistor 554 and the other electrode of the capacitor element 562 are electrically connected to the wiring 35a. The other electrode of the light emitting element 572 is the wiring 35b. And it is electrically connected. Here, one of the source or drain of transistor 552 and The gate of the transistor 554 and one electrode of the capacitive element 562 are electrically connected. The code will be designated as Node FD.

[0090] In the pixel 34 with the configuration shown in Figure 4B, for example, a low potential can be supplied to the wiring 35a. For example, a high potential can be supplied to wiring 35b.

[0091] In the pixel 34 with the configuration shown in Figure 4B, current flows to the light-emitting element 572 in accordance with the potential of node FD. The luminescence brightness from the light-emitting element 572 is controlled by controlling the current.

[0092] For the light-emitting element 572, for example, an EL element that utilizes electroluminescence can be applied. This is possible. An EL element has a layer containing a light-emitting compound between a pair of electrodes (hereinafter referred to as the EL layer). It also has a potential difference greater than the threshold voltage of the EL element between a pair of electrodes. When this process is initiated, holes are injected into the EL layer from the anode side, and electrons are injected from the cathode side. The electrons and holes that were created recombine in the EL layer, causing the light-emitting material contained in the EL layer to emit light.

[0093] Furthermore, EL elements are distinguished by whether the light-emitting material is an organic compound or an inorganic compound. Generally speaking, the former are called organic EL elements, and the latter are called inorganic EL elements.

[0094] Organic EL elements, when a voltage is applied, release electrons from one electrode and holes from the other electrode. These are each injected into the EL layer. Then, these carriers (electrons and holes) recombine. As a result, the luminescent organic compound forms an excited state, and when that excited state returns to the ground state... It emits light. Because of this mechanism, such a light-emitting element is a current-excited type light-emitting element. It is called [name].

[0095] In this specification, the voltage supplied to a display element such as a light-emitting element or a liquid crystal element refers to the voltage supplied to the display element. The potential applied to one electrode of the element and the potential applied to the other electrode of the display element, This shows the difference.

[0096] In addition to luminescent compounds, the EL layer also contains materials with high hole injection potential and materials with high hole transport potential. , hole-blocking materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar properties It may contain substances (substances with high electron transport and hole transport properties), etc.

[0097] The EL layer is produced by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed by the following method.

[0098] Inorganic EL elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their device configuration. It is classified as follows: Dispersed inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. It has a donor level and an acceptor level, and the luminescence mechanism utilizes donor levels. - Acceptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism is the inner-shell electron transition of metal ions. This is a localized emission type that utilizes [a specific technology / feature].

[0099] A light-emitting element only needs to have at least one of its pair of electrodes transparent in order to extract light. Then, a transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. Top emission structure that emits light from the top surface, bottom emission structure that extracts light from the substrate side. Tom emission) structure, and dual emission that extracts light emission from both sides ) There is a light-emitting element with a structure, and the light-emitting element of any emission structure can be applied.

[0100] A modification of pixel 34 having the configuration shown in FIG. 4B is shown in FIG. 4C. In pixel 34 having the configuration shown in FIG. 4C One of the source or drain of transistor 554 is, in addition to one electrode of light-emitting element 572 Electrically connected to the other electrode of capacitor element 562. On the other hand, wiring 35a can be configured not to be electrically connected to the other electrode of capacitor element 562. In pixel 34 having the configuration shown in FIG. 4C For example, a high potential can be supplied to wiring 35a, and a low potential can be supplied to wiring 35 b.

[0101] <An example of the operation method of display device 10> FIG. 5 is a timing chart for explaining an example of the operation method of display device 10 having pixel 34 with the configuration shown in FIGS. 4A to 4C In the timing chart shown in FIG. 5, for example, the demultiplexer circuit 81 has two output terminals, and an example of the operation method of display device 10 when display device 10 has n / 2 demultiplexer circuits 81 Is shown. In FIG. 5, an example of the operation method of pixel 34[i,j-1] and pixel 34[i,j] (i is an integer from 1 to m, j is an even number from 2 to n Is shown. Specifically, the potential of wiring 31[i], the potential of wiring 83[j / 2], the potential of wiring 82[j / 2], the potential of wiring 32[j-1], wiring 3 2[j], the potential of node FD[j-1], and the change over time of the potential of node FD[j] Are shown. Here, node FD[j-1] is the node F of pixel 34 in the j-1th column ​​​D is shown, and node FD[j] indicates the node FD of pixel 34 in column j.

[0102] In the timing chart shown in Figure 5, the data driver circuit 22 generates image data, This shows the operations performed to display the image corresponding to the image data on the display unit 33. The analog signal of the potential corresponding to data D[i,j-1] is input to pixel 34[i,j-1]. It supplies an analog signal of the potential corresponding to data D[i,j] to pixel 34[i,j]. This shows the supply operation. Also, the selection control input from wiring 83 to the demultiplexer circuit 81 The signal is converted to a 1-bit digital signal. Then, the potential of wiring 83[j / 2] is high. In this case, the demultiplexer circuit 81[j / 2] receives the above analog input from the input terminal. The signal is to be output to wiring 32[j-1]. On the other hand, the potential of wiring 83[j / 2] is low. If the potential is present, the demultiplexer circuit 81[j / 2] receives the above input from the input terminal. The analog signal will be output to wiring 32[j].

[0103] In the timing chart shown in Figure 5, high potential is indicated by "H" and low potential by "L". Also, to make the explanation easier, various resistors such as wiring resistance, parasitic capacitance of transistors and wiring, Furthermore, the effects of transistor threshold voltages, etc., are not considered.

[0104] During period T1, the potential of wiring 83 [J / 2] is set to a high potential, and the potential of wiring 82 [J / 2] This is set to the potential corresponding to data D[i,j-1]. This allows the electric potential of wiring 32[j-1] to be set. The position corresponds to the potential of data D[i,j-1]. Also, the potential of wiring 31[i] is set to high voltage. By doing so, the wiring 32[j-1] and node FD[i,j-1] are made conductive. Therefore, the potential of node FD[j-1] corresponds to the potential of data D[i,j-1]. As a result, data D[i,j-1] is written to pixel 34[i,j-1].

[0105] During period T2, the potential of wiring 83[J / 2] is set to a low potential, and the potential of wiring 82[J / 2] This is set to the potential corresponding to data D[i,j]. As a result, the potential of wiring 32[j] is set to the data This corresponds to the potential of D[i,j]. Also, the potential of wiring 31[i] is set to a high potential. This ensures that wiring 32[j] and node FD[i,j] are connected. The potential of FD[j] becomes the potential corresponding to data D[i,j], and data D[i,j] This is written to pixel 34[i,j]. The operation described above is performed, for example, by the display device 10. This is done for all pixels 34. This allows the image to be displayed on the display unit 33.

[0106] <Example configuration of display device 10 2> Figure 6 shows an example of the configuration of the display device 10. The display device 10 with the configuration shown in Figure 6 has layer 3 The point is that multiple display units 33 are provided in layer 0, meaning that the display unit provided in layer 30 is divided. This differs from the display device 10 with the configuration shown in Figure 2. In Figure 6, layer 30 has a 3x3 display section 3 This shows an example of the configuration of the display device 10 when 3 is provided. Note that layer 30 has 2 rows 2 A column display section 33 may be provided, or a display section 33 with 4 rows and 4 columns or more may be provided. This is also acceptable. Furthermore, the number of rows and columns of the display unit 33 provided on layer 30 may be different. Figure 6 In the display device 10 with the configuration shown, for example, all display units 33 are used to display a single image. It is possible.

[0107] Figure 6 omits wiring 31, 32, 82, and 83 for clarity. However, in reality, the display device 10 with the configuration shown in Figure 6 has wiring 31, wiring 32, wiring 82, And wiring 83 is provided. Also, although the electrical connection relationship of circuit 40 is omitted, in reality It is electrically connected to the data driver circuit 22. Note that in other figures, the same applies as in Figure 6. In some cases, certain components may be omitted.

[0108] Layer 20 contains a gate driver circuit 21 and a data driver circuit 22, for example, a display unit 33 The same number can be provided. In this case, the gate driver circuit 21 is the gate driver The circuit 21 is provided so as to overlap with the display unit 33 on which the pixels 34 that supply signals are located. Yes, it is possible. Also, the data driver circuit 22 is used to process the image data. The pixels to be supplied 34 can be provided so as to overlap with the display unit 33.

[0109] Multiple display units 33 are provided, and the gate driver circuit 21 and data driver circuit are provided accordingly. By providing 22, the number of pixels 34 provided in one display unit 33 can be reduced. Yes, it is possible. The multiple gate driver circuits 21 can be operated in parallel. The multiple data driver circuits 22 can be operated in parallel. Therefore, for example, in order to write the image data corresponding to one frame of an image to pixel 34, This allows us to shorten the time required. Therefore, we can shorten the length of one frame. This allows the operation of the display device 10 to be sped up. Therefore, the pixels of the display device 10 The number of 34 elements can be increased, improving the resolution of the image displayed by the display device 10. It is possible to display the resolution of an image using a display device according to one aspect of the present invention. A display device configured such that the gate driver circuit and data driver circuit do not overlap with the display unit. The resolution of the image that can be displayed can be increased. Furthermore, the clock frequency Because the wavenumber can be reduced, the power consumption of the display device 10 can be reduced. .

[0110] In this case, the gate driver circuit and data driver circuit are configured so that they do not overlap with the display unit. In addition, the gate driver circuit and the data driver circuit are provided, for example, on the outer periphery of the display unit. In this case, providing more than 2 rows and 2 columns of display space would be necessary for the data driver circuit. It is difficult from the standpoint of installation location, etc. On the other hand, the display device 10 has a gate driver circuit and data By placing the driver circuit on a different layer from the layer on which the display unit is located, it does not overlap with the display unit. It can be provided to have a region that is larger than 2 rows and 2 columns, as shown in Figure 6. A display unit can be provided. In other words, the display device 10 can have a gate driver circuit and Each data driver circuit can be provided with five or more units.

[0111] Based on the above, the display device 10 has a gate driver circuit and a data driver circuit that overlap with the display unit. For example, it can operate at a higher speed than a display device with a configuration that does not use this. Therefore, display device 1 A pixel density of 0 is achieved by configuring the gate driver circuit and data driver circuit so that they do not overlap with the display unit. The pixel density of the display device can be increased to 1000 ppi. It can be set to above, it can be set to above 2000ppi, and it can be set to above 5000ppi. This allows for the display of high-definition images on the display device 10. Therefore, the display device 10 can display high-quality images with less graininess, creating a sense of realism. It can display high-resolution images. Therefore, the display device 10 is particularly important for the display surface and the user. Devices that are in close proximity, especially portable electronic devices, wearable electronic devices, and It can be suitably used in e-book readers and the like. It can also be suitably used in VR devices and AR devices. It can be used appropriately. Furthermore, it can be used in electronic devices having an imaging device, such as digital cameras. It can also be suitably used in viewfinders such as electronic viewfinders. Cut.

[0112] Furthermore, the resolution of the image that can be displayed by the display device 10 is determined by the gate driver circuit and The data driver circuit can be displayed using a display device configured so that it does not overlap with the display unit. The image resolution can be increased. For example, if the display device 10 is used as a viewfinder... If available, the display device 10 can display images with a resolution of 4K, 5K, or higher. Cut.

[0113] Here, if the pixel density of the display device 10 is increased, the drive circuits such as the data driver circuit 22 will The transistors and other components to be installed also need to be densely integrated. However, high density Due to limitations in integration and other reasons, the data driver circuit 22 occupies a large area relative to the display unit 33. The area may become larger. As a result, the data driver circuit 22 is separated from the display unit 33. There is a possibility of overflow. Or, the area of ​​the data driver circuit 22 that does not overlap with the display unit 33. The area may increase. Therefore, the frame may become larger.

[0114] On the other hand, by providing a demultiplexer circuit 81 in the display device 10, as described above, for example, This allows for a reduction in the number of transistors and other elements in the driver circuit 22. The area occupied by the data driver circuit 22 can be reduced. Therefore, the display device 1 Even when the pixel density of zeros is high, the data driver circuit 22 extends beyond the display unit 33. This can be suppressed. Alternatively, the data driver circuit 22 may not overlap with the display unit 33. The area of ​​the display region can be reduced. Therefore, the display device 10 can be made with a narrow bezel. It can be done, and it can also be made smaller.

[0115] Furthermore, multiple data driver circuits 22, etc., are provided in layer 20, and multiple display units 33 are provided in layer 30. Even with the above configuration, the circuit 40 provided in the display device 10 is the same as in the case shown in Figure 2. The number of can be 1. Therefore, as shown in Figure 6, the circuit 40 is in either table It can also be installed so as not to overlap with the display section 33. It may be provided so as to have an area that overlaps with part 33.

[0116] Figure 6 shows an example configuration in which the same number of gate driver circuits 21 as the number of display units 33 are provided. However, the present invention is not limited to this embodiment. Figure 7 shows a modified configuration of the one shown in Figure 6, and gated This shows an example of the configuration of the display device 10 when the number of driver circuits 21 is the same as the number of columns in the display unit 33. In the display device 10 with the configuration shown in Figure 7, three rows of display units 33 are provided, Three driver circuits 21 are provided. Additionally, a 3-line display unit 33 is provided. Each row and column of the display unit 33 shares one gate driver circuit 21.

[0117] Figure 8 shows a modified configuration of the one shown in Figure 6, in which multiple display units 33 are provided, and the gate driver rotation This shows an example of the configuration of the display device 10 when one path 21 is provided. In the display device 10, the 3x3 display unit 33 shares one gate driver circuit 21. In addition, in the display device 10 with the configuration shown in Figure 8, the gate driver circuit 21 is connected to the display unit 33. It is possible to create a configuration that does not overlap.

[0118] Also, although not shown in the diagram, the data driver circuit 22 is configured to be the same number as the display unit 33. The number of data driver circuits 22 in the display device 10 may be provided in the display device 10. The number of display units 33 may be greater or less than the number of display units 33.

[0119] Figure 2 shows an example configuration in which a circuit 40 is provided on layer 20, but if a circuit 40 is not provided on layer 20 It is not necessary. Figure 9 is a modified example of the configuration shown in Figure 2, in which the circuit 40 is provided in layer 30. This shows an example configuration of the display device 10. Alternatively, a circuit 40 may be provided in layer 80. Oh, the elements that make up circuit 40 are arranged in two or three layers from among layers 20, layer 80, and layer 30. They may be provided in a distributed manner.

[0120] Figure 2 shows an example configuration in which one display unit 33 and one data driver circuit are provided, but The driver circuit 22 may be provided in greater numbers than the display unit 33. Figure 10 shows the configuration shown in Figure 2. This is a modified version, where two data driver circuits are used for one display unit 33 (data driver An example configuration of the display device 10 when circuit 22a and data driver circuit 22b are provided is shown. Yes, they are.

[0121] In the display device 10 with the configuration shown in Figure 10, odd-numbered demultiplexer circuits 81 (demultiplexer The input terminals of the Plexor circuit 81[1], demultiplexer circuit 81[3], etc. are data drives. Electrically connected to the IBA circuit 22a, even-numbered demultiplexer circuits 81 (demultiplexer The input terminals of the LEXA circuit 81[2], demultiplexer circuit 81[4], etc. are data dry It is electrically connected to circuit 22b. Note that in Figure 10, n / 2 is considered an even number.

[0122] The data driver circuit 22a is electrically connected to the output terminals of the odd-numbered demultiplexer circuits 81. It has a function to generate image data representing the image to be displayed using the connected pixels 34. The data driver circuit 22b connects to the output terminals of the even-numbered demultiplexer circuits 81 and electrically It has a function to generate image data representing the image to be displayed using the precisely connected pixels 34. Furthermore, the image data generated by the data driver circuit 22a and the data driver circuit 22 The image data generated by b and the other elements together can be said to represent a single image.

[0123] Data driver circuits 22a and 22b are connected to data driver circuit 22. Similarly, it has an area that overlaps with the display unit 33. For example, the data driver circuit 22a and The data driver circuit 22b, like the data driver circuit 22, operates in the region that overlaps with the pixel 34. It has the following features. Furthermore, the data driver circuit 22a is clearly separated from the gate driver circuit 21. It has a region 23a which is an overlapping region that is not separated. Furthermore, the data driver circuit 22b It has a region 23b that is not clearly separated from the gate driver circuit 21 and overlaps with it.

[0124] As shown in Figure 10, by providing more data driver circuits than the display unit 33, the data This makes it possible to reduce the density of transistors and other components that make up the driver circuit. This increases the flexibility of the layout of the display device 10.

[0125] The configuration of data driver circuits 22a and 22b is as shown in Figure 3. The configuration can be the same as that of the driver circuit 22.

[0126] Figure 2 shows an example configuration in which one display unit 33 and one gate driver circuit are provided. The gate driver circuit may be provided in greater numbers than the display unit 33. Figure 11 shows the configuration shown in Figure 2. This is a modified version, where two gate driver circuits are used for one display unit 33 (gate driver circuit This shows an example configuration of the display device 10 when a path 21a and a gate driver circuit 21b are provided. ru.

[0127] In the display device 10 with the configuration shown in Figure 11, the pixels 34 of the odd-numbered rows are connected via wiring 31a to the gate The driver circuit 21a is electrically connected, and the even-numbered row pixels 34 are connected via wiring 31b. It is electrically connected to the gate driver circuit 21b. Wires 31a and 31b are connected to wire 3 Similar to option 1, it functions as a scan line.

[0128] The gate driver circuit 21a generates signals to control the operation of the odd-numbered row pixels 34. The gate driver circuit has the function of supplying the signal to the pixel 34 via wiring 31a. 21b generates signals to control the operation of pixels 34 in even-numbered rows, via wiring 31b It has the function of supplying the signal to the pixel 34.

[0129] Gate driver circuits 21a and 21b are connected to gate driver circuit 21. Similarly, it has an area that overlaps with the display unit 33. For example, the gate driver circuit 21a and The gate driver circuit 21b overlaps with the pixel 34, similar to the gate driver circuit 21. It has the following features. Furthermore, the gate driver circuit 21a is clearly separated from the data driver circuit 22. It has a region 23c which is an overlapping region that is not separated. Furthermore, the gate driver circuit 21b It has a region 23d that is not clearly separated from the data driver circuit 22 and overlaps with it.

[0130] As shown in Figure 11, by providing more gate driver circuits than the display unit 33, This makes it possible to reduce the density of transistors and other components that make up the driver circuit. This increases the flexibility of the layout of the display device 10.

[0131] Furthermore, in the display device 10 with the configuration shown in Figure 11, the gate driver circuit 21a is operated to make odd After writing image data to all pixels 34 in several rows, the gate driver circuit 21b is activated. This allows image data to be written to all pixels 34 in even-numbered rows. That is, Figure 11 The display device 10 with the configuration shown can be operated using an interlaced method. By operating using an inter-race method, the operation of the display device 10 is accelerated, and the frame The frequency can be increased. Also, the number of pixels on which image data is written in one frame period. The number 34 is set to half the number used when the display device 10 is operated using a progressive method. This is possible. Therefore, when the display device 10 is operated using the interlacing method, the program Because the clock frequency can be reduced compared to when operating using the less-intensive method, The power consumption of the display device 10 can be reduced.

[0132] Figure 2 shows a configuration where only one end of the wiring 32 is connected to the output terminal of the demultiplexer circuit 81. Although it shows that it is complete, multiple points of the wiring 32 are connected to the output terminals of the demultiplexer circuit. It is acceptable. By connecting multiple points of the wiring 32 to the data driver circuit 22, the false information can be distorted. This allows for a shorter wiring distance from the output terminal of the lutiplexer circuit to pixel 34. This makes it possible to suppress signal delays caused by wiring resistance, parasitic capacitance, etc., as shown in the table. The operation of the display device 10 can be made faster. Figure 12 shows that both ends of the wiring 32 are demultiplied. This shows an example configuration of the display device 10 when connected to the output terminal of the XX circuit.

[0133] In Figure 12, the demultiplexer circuit connected to one end of the wiring 32 is demultiplexer The circuit is designated as 81a, and the demultiplexer circuit connected to the other end of wiring 32 is demultiplexer This is referred to as circuit 81b. Also, the input terminal of the demultiplexer circuit 81a is connected to wiring 82a and power The input terminal of the demultiplexer circuit 81b is electrically connected to the wiring 82b. It is stated that the selection control signal input terminal of the demultiplexer circuit 81a is wired 8 Electrically connected to 3a, the selection control signal input terminal of the demultiplexer circuit 81b is wired to 8 It is stated that it is electrically connected to 3b.

[0134] Furthermore, not only one end and the other end of the wiring 32, but also other parts of the wiring 32 constitute the demultiplexer circuit. It may also be connected to the output terminal of the demultiplexer. For example, the center of the wiring 32 is connected to the demultiplexer circuit. It may also be connected to the output terminal of the circuit. Wiring 32 and the output terminal of the demultiplexer circuit By increasing the number of connection points, signal delays and other issues can be further suppressed, and the display equipment The operation of the device 10 can be further accelerated. For example, one end of the wiring 32 and the central part of the wiring 3 2 may be connected to the output terminal of the demultiplexer circuit, and the other end of the wiring 32 does not have to be connected to the output terminal of the demultiplexer circuit.

[0135] A plurality of locations on the wiring 31 may be connected to one gate driver circuit 21. This can also suppress signal delay and the like, and accelerate the operation of the display device 10.

[0136] <Configuration example of the D / A conversion circuit 46> FIG. 13 is a circuit diagram showing a configuration example of a potential generation circuit 46a and a pass transistor logic circuit 46b that constitute the D / A conversion circuit 46. The D / A conversion circuit 46 having the configuration shown in FIG. 13 can convert 8-bit digital data DD into analog image data IS. As shown in FIG. 3, the data driver circuit 22 can have a plurality of pass transistor logic circuits 46b, but in FIG. 13, one pass transistor logic circuit 46b is shown for convenience of explanation.

[0137] Here, for example, when the digital data DD is 8-bit digital data, it can be said that the digital data DD is composed of 8-digit digital values DV. In this specification, etc., for example, 8-digit digital values DV are described and shown in order from the smallest digit as digital values DV<1> to digital values DV<8>. That is, for example, digital values DV<1> to digital values DV<8> each represent a 1-bit value (for example, 0 or 1). [[ID=3%]]

[0138] The potential generation circuit 46a, as shown in Figure 13, has resistive elements 48[1] to 48

[0256] , which are connected in series. In other words, the D / A conversion circuit 46 has a resistive string It can be used as a D / A conversion circuit of type G.

[0139] A potential VDD can be supplied to one terminal of the resistive element 48[1]. A potential VSS can be supplied to one terminal of 8

[0256] . This allows resistance From each terminal of element 48[1] to resistive element 48

[0256] , different potentials V1 to V 256 This can be output. Note that in Figure 13, when the potential V1 is set to potential VDD. The configuration example of the potential generation circuit 46a is shown, but the potential V 256 A configuration in which the potential VSS is Alternatively, the resistive element 48

[0256] may be omitted, and the potential V1 is set to potential VDD, and potential V2 56 This can also be defined as the potential VSS.

[0140] In this specification, the potential VDD can be, for example, a high potential, and the potential VSS can be, for example It can be made to a low potential.

[0141] The pass transistor logic circuit 46b with the configuration shown in Figure 13 has 8 stages of pass transistors 4 It consists of 9. Specifically, the pass transistor logic circuit 46b has 1 stage It has a configuration that branches electrically into two paths, resulting in a total of 256 paths. Therefore, the pass transistor 49 can be electrically connected in a tournament configuration. The source or drain of the 8th stage pass transistor 49, which is the final stage, is It can output analog image data (IS).

[0142] For example, digital value DV <1> This can be supplied to the first-stage pass transistor 49. Digital Value (DV) <2> This can be supplied to the second stage pass transistor 49, digital Value DV <8> This can be supplied to the 8th stage pass transistor 49. Thus, The potential of the image data IS is determined according to the digital data DD, ranging from potential V1 to potential V 256 Noise It can be either. Therefore, digital image data can be converted to analog image data IS It can be converted to [this].

[0143] Furthermore, the pass transistor logic circuit 46b shown in Figure 13 is an n-channel type pass transistor Both a transistor 49 and a p-channel type pass transistor 49 are provided, but n-channel It is also possible to have a configuration that only provides channel-type pass transistors 49. For example, digital Lu value DV <1> Digital Value DV <8> In addition, these complementary data pass transistors By supplying power to the gate of 49, the pass transistor logic circuit 46b is provided. All of the pass transistors 49 can be n-channel type transistors.

[0144] The configuration shown in Figure 13 is a device that performs D / A conversion of digital data (DD) with a bit depth other than 8 bits. It can also be applied to a D / A conversion circuit 46 that has the capability. For example, a potential generation circuit 46a 1024 or 1023 resistor elements 48 are provided, and the pass transistor logic circuit 46b By providing 10 stages of pass transistors 49, the D / A conversion circuit 46 is configured to produce 10 bits. It can have the function of converting digital data (DD) to digital-to-analog (D / A).

[0145] <Example configuration of gate driver circuit 21> Figure 14 is a block diagram showing an example configuration of the gate driver circuit 21. Note that the same diagram is shown in Figure 11. The gate driver circuit 21a and the gate driver circuit 21b can be configured similarly. can.

[0146] The gate driver circuit 21 is a register composed of multiple set-reset flip-flops. It has a register circuit R. The register circuit R has wiring 31 which functions as a scanning line and electrical It is connected to and has the function of outputting a signal to wiring 31.

[0147] The signal RES is a reset signal, and by setting the signal RES to a high potential, for example, a register circuit is created. The output of R can be made to a low potential. Signal SP is the start pulse signal, and By inputting the signal to the gate driver circuit 21, the shift operation by the register circuit R is performed. This can be started. The signal PWC is a pulse width control signal, and the register circuit R is wired. It has a function to control the pulse width of the signal output to 31. Signal CLK[1], signal CLK [2], signal CLK[3], and signal CLK[4] are clock signals, one Regist For example, two signals from among signals CLK[1] to CLK[4] are input to circuit R. It is possible.

[0148] Note that in the configuration shown in Figure 14, the wiring 31 electrically connected to the register circuit R is connected to other wiring. By doing so, the data driver circuit 22 can also be applied to the shift register circuit 44, etc. It is possible.

[0149] Figure 15A shows the signal input to register circuit R and the signal output from register circuit R. This is a diagram. Here, in Figure 15A, the clock signal is the signal CLK[1] and the signal This shows the case where CLK[3] is input.

[0150] Signal FO is an output signal, for example, a signal output to wiring 31. Signal SROUT is This is a shift signal and can be the signal LIN that is input to the next stage register circuit R. Of the signals shown in Figure 15A, the signals RES, PWC, CLK[1], and C LK[3] and the signal LIN are signals input to the register circuit R, and the signals FO and The signal SROUT is the signal output from the register circuit R.

[0151] Figure 15B shows an example of a register circuit R configuration where the input and output signals are the signals shown in Figure 15A. This is a diagram. The register circuit R consists of transistors 51 through 63 and a capacitive element 64. It has a capacitance element 66.

[0152] Either the source or drain of transistor 51 is connected to the source or drain of transistor 52. One side of transistor 56, either the source or the drain of transistor 56, and the source of transistor 59. It is electrically connected to either the drain or the gate of transistor 52. Either the source or drain of transistor 53, either the source or drain of transistor 54, Either the source or drain of transistor 55, the gate of transistor 58, transistor The gate of transistor 61 and one electrode of the capacitive element 64 are electrically connected. Transistor 56 The other of the source or drain is the gate of transistor 57 and one of the capacitive elements 65. The electrodes are electrically connected. The source or drain of transistor 59 is connected to the other side of the transistor The gate of transistor 60 and one electrode of the capacitive element 66 are electrically connected. Either the source or drain of transistor 60 is connected to either the source or drain of transistor 61. The gate of the transistor 62 and the other electrode of the capacitive element 66 are electrically connected.

[0153] The signal LIN is input to the gates of transistor 51 and transistor 55. The signal CLK[3] is input to the gate of transistor 53. Transistor 54 The signal RES is input to the gate of transistor 57. Either the source or the drain of transistor 57. The signal CLK[1] is input to the source or the other of the drain of transistor 60. The signal PWC is input.

[0154] Either the source or the drain of transistor 62, and the source or the drain of transistor 63 One end of the input is electrically connected to wiring 31, and as mentioned above, signal F is received from wiring 31. O is output. The other side of the source or drain of transistor 57, and the source of transistor 58. The signal SROUT is output from one of the electrodes of the drain or socket and the other electrode of the capacitive element 65. It will be done.

[0155] The other source or drain of transistor 51, and the source or drain of transistor 53 On the other hand, the source or drain of transistor 54, the gate of transistor 56, The gate of transistor 59 and the other of the source or drain of transistor 62 have a potential difference. VDD is supplied. Transistor 52's source or drain, the other side, transistor 55 The other side of the source or drain of transistor 58, the other side of the source or drain of transistor 58 The other side of the source or drain of transistor 61, the other side of the source or drain of transistor 63, The potential VSS is supplied to the other electrode of the capacitive element 64.

[0156] Transistor 63 is a bias transistor and functions as a constant current source. The gate of the transistor 63 can be supplied with a bias potential, which is a potential Vbias. ru.

[0157] The source follower circuit 67 is formed by transistors 62 and 63. A source follower circuit can function as a buffer circuit. Therefore, By providing a source follower circuit 67 in the register circuit R, the distribution within the register circuit R is Even if signal attenuation occurs due to line resistance, parasitic capacitance, etc., the resulting signal FO will not be affected. This can suppress a decrease in position. This allows for faster operation of the display device 10. Yes, it is possible. Furthermore, if the source follower circuit 67 has a buffer function, It may be a circuit other than a follower circuit. For example, it may be a common-source circuit.

[0158] <Example configuration of area 23> Figure 16 shows region 2, which is the region where the gate driver circuit 21 and the data driver circuit 22 overlap. This figure shows an example of configuration 3. Note that regions 23a and 23b shown in Figure 10, and Figure 1 Regions 23c and 23d shown in 1 can also be configured similarly.

[0159] As shown in Figure 16, region 23 contains elements that constitute the gate driver circuit 21. The region and the region having elements that constitute the data driver circuit 22 have a certain regularity It is provided. In Figure 16, transistor 7 is used as an element constituting the gate driver circuit 21. The diagram shows 1, and the transistor 72 is shown as an element constituting the data driver circuit 22. .

[0160] In Figure 16, the regions containing the elements that make up the gate driver circuit 21 are set in the first and third rows. The region containing elements that constitute the data driver circuit 22 is provided in the second and fourth rows. This shows the case where the elements constituting the gate driver circuit 21 are located in region 23. A dummy element is provided between each of the regions. Furthermore, a data driver circuit 22 is formed. A dummy element is provided between each region containing the element. Figure 16 shows transistor 7 Dummy transistors 73 are placed on all four sides of transistor 1 and on all four sides of transistor 72 as dummy elements. This shows an example of the configuration of region 23 when it is provided.

[0161] By providing a dummy element such as a dummy transistor 73 in region 23, the dummy element The impurities are absorbed, and the impurities diffuse to transistors 71 and 72, etc. This can be suppressed. This improves the reliability of transistors 71 and 72, etc. This can improve the reliability of the display device 10. (See Figure 16) So, transistors 71 and 72, and dummy transistor 73 are matrix They are arranged in a cubic pattern, but do not necessarily have to be arranged in a matrix pattern.

[0162] Figure 17 is a top view showing an example configuration of region 70, which is part of region 23. Figures 16 and 17 As shown, region 70 contains one transistor 71, one transistor 72, and a dummy Two transistors 73 are provided. As shown in Figure 17, transistor 71 is a channel It has a filament-forming region 110, a source region 111, and a drain region 112. The gate electrode 113 has a region that overlaps with the channel formation region 110.

[0163] Note that in Figure 17, components such as the gate insulator are omitted. Also, in Figure 17, the channel The drain formation region, source region, and drain region are not clearly separated in the description.

[0164] An opening 114 is provided in the source region 111, and the source region 111 is accessible through the opening 114. It is electrically connected to the wiring 115. An opening 116 is provided in the drain area 112. The drain area 112 is electrically connected to the wiring 117 through the opening 116.

[0165] The gate electrode 113 is provided with an opening 118, and the gate electrode 113 is provided through the opening 118. It is electrically connected to wiring 121. An opening 119 is provided in wiring 115, and opening 1 Wiring 115 is electrically connected to wiring 122 via 19. Wiring 117 has an opening 12 A 0 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. Furthermore, the source region 111 is electrically connected to the wiring 122 via the wiring 115, and the drain Region 112 is electrically connected to wiring 123 via wiring 117.

[0166] Transistor 72 has a channel formation region 130, a source region 131, and a drain region 1 32 and , and also gate such that it has a region that overlaps with the channel formation region 130. It has an electrode 133.

[0167] An opening 134 is provided in the source region 131, and the source region 131 is accessible through the opening 134. It is electrically connected to the wiring 135. An opening 136 is provided in the drain area 132. The drain area 132 is electrically connected to the wiring 137 through the opening 136.

[0168] The gate electrode 133 is provided with an opening 138, and the gate electrode 133 is provided through the opening 138. It is electrically connected to wiring 141. An opening 139 is provided in wiring 135, and opening 1 Wiring 135 is electrically connected to wiring 142 via 39. Wiring 137 has an opening 14 A hole is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. Furthermore, the source region 131 is electrically connected to the wiring 142 via the wiring 135, and the drain Region 132 is electrically connected to wiring 143 via wiring 137.

[0169] Furthermore, channel-forming region 110 and channel-forming region 130 are provided in the same layer. It is possible to do so. Also, the source region 111 and the drain region 112, and the source region 131 The drain region 132 and the gate electrode can be provided in the same layer. 113 and gate electrode 133 can be provided on the same layer. Also, wiring 1 Wiring 15 and wiring 117, and wiring 135 and wiring 137 are provided on the same layer. Yes, it is possible. In other words, transistor 71 and transistor 72 are placed on the same layer. This allows transistor 71 and transistor 72 to be different from each other. Compared to the case where it is provided in layers, the manufacturing process of the display device 10 can be simplified, and the display device 10 It can be made inexpensive.

[0170] The wiring 121 is electrically connected to the transistor 71 that constitutes the gate driver circuit 21. The wiring 123 is provided on the same layer. Furthermore, it constitutes the data driver circuit 22. The wirings 141 to 143 that are electrically connected to the transistor 72 are on the same layer. It is provided in. Furthermore, wiring 121 to wiring 123 is different from wiring 141 to wiring 143. It is provided in the layer. As a result, the transistors that constitute the gate driver circuit 21 The sta 71 and the transistor 72, which is an element constituting the data driver circuit 22, are electrically This can suppress short circuits. Therefore, the gate driver circuit 21 and the data Even if the driver circuit 22 is not clearly separated and has overlapping regions, the gate driver circuit 2 This makes it possible to suppress malfunctions of the display device and the data driver circuit 22. It can increase reliability by 10.

[0171] In this specification, "the same layer as A" means, for example, the same layer formed in the same process as A. This refers to a layer containing a single material.

[0172] In Figure 17, wiring 141 to 143 is provided above wiring 121 to 123. The configuration is shown, but below wiring 121 to wiring 123 there are wirings 141 to wiring 143 It is acceptable to provide this.

[0173] Furthermore, in Figure 17, wiring 121 to wiring 123 extends horizontally, and wiring 141 to wiring 1 Although 43 is shown as being in a vertically extending configuration, one aspect of the present invention is not limited to this. For example If wiring 121 to wiring 123 is extended vertically, and wiring 141 to wiring 143 is extended horizontally. The configuration may extend in that direction. Alternatively, wiring 121 to wiring 123, and wiring 141 to Both of the wires 143 may extend horizontally or vertically.

[0174] The dummy transistor 73 has a semiconductor 151 and a conductor 152. It has a region that overlaps with semiconductor 151. Semiconductor 151 has transistor 71 and transistor It can be formed in the same layer as the channel formation region of sta 72. Also, conductor 152 It can be formed in the same layer as the gate electrodes of transistors 71 and 72. Furthermore, the dummy transistor 73 does not have either the semiconductor 151 or the conductor 152. It can also be used as a composition.

[0175] The semiconductor 151 and the conductor 152 are configured not to be electrically connected to other wiring, etc. Yes, it is possible. A constant potential may be supplied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0176] <Example of cross-sectional configuration of display device 10> Figure 18 is a cross-sectional view showing an example of the configuration of the display device 10. The display device 10 consists of a substrate 701 and It has a substrate 705, and substrates 701 and 705 are bonded together by a sealing material 712. .

[0177] As the substrate 701, a single-crystal semiconductor substrate such as a single-crystal silicon substrate can be used. Note that a semiconductor substrate other than a single-crystal semiconductor substrate may be used as substrate 701.

[0178] Transistors 441 and 601 are provided on substrate 701. Transistor 441 can be a transistor provided in circuit 40. Transistor 60 1 is a transistor provided in the gate driver circuit 21, or a data driver circuit 22 It can be a transistor provided in. That is, transistor 441 and transistor The Zista 601 can be provided in layer 20 as shown in Figure 1B, etc.

[0179] Transistor 441 has a conductor 443 that functions as a gate electrode and a gate insulator It consists of an insulator 445 that functions as a channel forming region and a part of the substrate 701, and A semiconductor region 447 including the region, having a low function as either the source region or the drain region. Resistive region 449a, and low resistance having the other function as either a source region or a drain region. It has region 449b. Transistor 441 is either p-channel or n-channel. But that's fine.

[0180] Transistor 441 is electrically isolated from other transistors by the element isolation layer 403. In Figure 18, transistors 441 and 601 are separated by the element isolation layer 403. This shows the case where the elements are electrically isolated. The element isolation layer 403 is LOCOS(LOCal Oxidation of Silicon (STI) method, or STI (Shallow Tre) method. It can be formed using methods such as the (nch Isolation) method.

[0181] Here, the transistor 441 shown in Figure 18 has a convex shape in the semiconductor region 447. The sides and top surface of the semiconductor region 447 are covered by the conductor 443 via the insulator 445. It is provided. Note that in Figure 18, the conductor 443 covers the side surface of the semiconductor region 447. It is not shown. Furthermore, materials that adjust the work function can be used for the conductor 443.

[0182] Transistors with a convex semiconductor region, such as transistor 441, have a semiconductor substrate. Because it utilizes a protruding part, it can be called a fin-type transistor. Even if it has an insulator that is in contact with the top and functions as a mask for forming a protrusion, Good. Also, Figure 18 shows a configuration in which a part of the substrate 701 is processed to form a protrusion. Alternatively, a semiconductor having a convex shape may be formed by processing the SOI substrate.

[0183] Note that the configuration of transistor 441 shown in Figure 18 is just one example, and is not limited to this configuration. The appropriate configuration should be chosen depending on the path configuration or the operating method of the circuit. For example, 4 transistors 41 may also be a planar transistor.

[0184] Transistor 601 can have the same configuration as transistor 441.

[0185] On the substrate 701 are an element isolation layer 403, and transistors 441 and 60 In addition to 1, insulators 405, 407, 409, and 411 are provided. Conductor 451 in insulator 405, insulator 407, insulator 409, and insulator 411 It is buried. Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0186] Insulators 413 and 415 are provided on the conductor 451 and on the insulator 411. Furthermore, a conductor 457 is embedded in the insulator 413 and the insulator 415. Conductor 45 7 can be provided on the same layer as wiring 121 to 123 shown in Figure 17. The height of the top surface of the conductor 457 and the height of the top surface of the insulator 415 can be made to be approximately the same.

[0187] Insulators 417 and 419 are provided on the conductor 457 and on the insulator 415. Furthermore, a conductor 459 is embedded in the insulator 417 and the insulator 419. Conductor 45 9 can be provided on the same layer as wiring 141 to 143 shown in Figure 17. The height of the top surface of the conductor 459 and the height of the top surface of the insulator 419 can be made to be approximately the same.

[0188] Insulators 821 and 814 are provided on the conductor 459 and on the insulator 419. A conductor 853 is embedded in the edge 821 and in the insulator 814. Here, the conductor 8 The height of the top surface of 53 and the height of the top surface of the insulator 814 can be made to be approximately the same.

[0189] An insulator 816 is provided on the conductor 853 and on the insulator 814. The conductive body 855 is embedded. Here, the height of the top surface of the conductive body 855 and the top of the insulator 816 The surface height can be made to be approximately the same.

[0190] Insulators 822, 824, and 854 are placed on the conductor 855 and the insulator 816. Edge members 844, insulators 880, insulators 874, and insulators 881 are provided. Insulator 82 Insulator 2, insulator 824, insulator 854, insulator 844, insulator 880, insulator 87 A conductor 805 is embedded in 4 and in the insulator 881. Here, on the conductor 805 The height of the surface and the height of the top surface of the insulator 881 can be made to be approximately the same.

[0191] Insulators 421 and 214 are provided on the conductor 817 and on the insulator 881. A conductor 453 is embedded in the edge 421 and in the insulator 214. Here, the conductor 4 The height of the top surface of 53 and the height of the top surface of the insulator 214 can be made to be approximately the same.

[0192] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductive body 455 is embedded. Here, the height of the top surface of the conductive body 455 and the top of the insulator 216 The surface height can be made to be approximately the same.

[0193] Insulators 222, 224, and 254 are placed on the conductor 455 and the insulator 216. Edge members 244, insulators 280, insulators 274, and insulators 281 are provided. Insulator 22 Insulator 2, insulator 224, insulator 254, insulator 244, insulator 280, insulator 27 A conductor 305 is embedded in 4 and in the insulator 281. Here, on the conductor 305 The height of the surface and the height of the top surface of the insulator 281 can be made to be approximately the same.

[0194] An insulator 361 is provided on the conductor 305 and on the insulator 281. The electric body 317 and the conductor 337 are embedded. Here, the height of the upper surface of the conductor 337 and The height of the top surface of the insulator 361 can be made to be approximately the same.

[0195] An insulator 363 is provided on the conductor 337 and on the insulator 361. The electric element 347, the conductor 353, the conductor 355, and the conductor 357 are embedded here. , the height of the upper surfaces of conductor 353, conductor 355, and conductor 357, and the upper surface of insulator 363 The height can be made to be about the same.

[0196] Connecting electrodes 76 are placed on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. A 0 is provided. Also, an anisotropic conductor 780 is electrically connected to the connecting electrode 760. A flexible printed circuit (FPC) is provided to electrically connect to the anisotropic conductor 780. A Printed Circuit (FPC) 716 is provided. The FPC 716 displays Various signals and the like are supplied to the display device 10 from outside the device 10.

[0197] As shown in Figure 18, the source region or drain region of transistor 441 The functional low-resistance region 449b consists of conductors 451, 457, 459, and a conductive material. Body 853, Conductor 855, Conductor 805, Conductor 817, Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 347, Conductor 353, Conductor 35 5. Through the conductor 357, connecting electrode 760, and anisotropic conductor 780, the FPC 716 and They are electrically connected. In Figure 18, the connecting electrode 760 and the conductor 347 are electrically connected. Three conductors having the function of conducting: conductor 353, conductor 355, and conductor 357. The present invention is shown, but is not limited to this. The connecting electrode 760 and the conductor 347 are electrically connected. There may be one, two, or four or more conductors that have the function of connecting to a target. This may also be done. A conductor having the function of electrically connecting the connecting electrode 760 and the conductor 347 By providing multiple connections, contact resistance can be reduced.

[0198] A transistor 800 is provided on the insulator 814. Transistor 800 is a demarcation It can be a transistor provided in the ticplexer circuit 81. The transistor 800 can be a transistor provided in layer 80 as shown in Figure 1B. The ZISTA 800 can be used as an OS transistor.

[0199] Insulator 854, insulator 844, insulator 880, insulator 874, and insulator 881 Conductors 801a and 801b are embedded inside. Conductor 801a is a transistor Electrically connected to either the source or drain of the zista 800, conductor 801b is a tra It is electrically connected to the other side of the source or drain of the conductor 800. Here, conductor 80 The height of the top surface of 1a and the conductor 801b can be made to be approximately the same as the height of the top surface of the insulator 881. .

[0200] A transistor 550 is provided on the insulator 214. As mentioned above, transistor 5 50 can be a transistor provided in pixel 34. In other words, a transistor Transistor 550 can be provided in layer 30 as shown in Figure 1B, etc. Transistor 550 is OS It can be used as a transistor. OS transistors have the characteristic of having extremely low off-current. It has the following characteristics. Therefore, the retention time of image data can be extended, so refresh rate The frequency of operation can be reduced. Therefore, the power consumption of the display device 10 can be reduced.

[0201] Insulator 254, insulator 244, insulator 280, insulator 274, and insulator 281 Conductors 301a and 301b are embedded inside. Conductor 301a is a transistor Electrically connected to either the source or drain of the ZISTA 550, conductor 301b is a tra It is electrically connected to the source or drain of the converter 550. Here, the conductor 30 The height of the upper surface of 1a and the conductor 301b can be made to be approximately the same as the height of the upper surface of the insulator 281. .

[0202] Furthermore, the layer on which transistors 441 and 601 are provided, and transistor 8 An OS transistor or the like may be provided between the layer where 00 etc. is provided. Between the layer where transistors such as sta800 are provided and the layer where transistors such as 550 are provided, OS Transistors and the like may be provided. Furthermore, the layer above the layer in which transistor 550 and the like are provided OS transistors and the like may be provided.

[0203] Insulator 361 contains conductor 311, conductor 313, conductor 331, capacitive element 560, conductor Conductors 333 and 335 are embedded. Conductors 311 and 313 are transient It is electrically connected to the STA 550 and functions as wiring. Conductor 333 and Conductor 3 35 is electrically connected to the capacitive element 560. Here, conductor 331, conductor 333, Furthermore, the height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0204] Conductors 341, 343, and 351 are embedded in the insulator 363. In this way, the height of the top surface of the conductor 351 and the height of the top surface of the insulator 363 can be made to be approximately the same.

[0205] Insulator 405, Insulator 407, Insulator 409, Insulator 411, Insulator 413, Insulator 41 5, Insulator 417, Insulator 419, Insulator 821, Insulator 814, Insulator 880, Insulator 874, Insulator 881, Insulator 421, Insulator 214, Insulator 280, Insulator 274, Insulator The edge 281, insulator 361, and insulator 363 have functions as interlayer films, respectively It may also function as a planarizing film that covers the uneven shape below. For example, insulator 36 The top surface of part 3 is chemically mechanically polished (CMP) to improve flatness. Even if the surface has been flattened by a planarization process using methods such as artificial polishing, good.

[0206] As shown in Figure 18, the capacitive element 560 has a lower electrode 321 and an upper electrode 325. Furthermore, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. In the capacitive element 560, an insulator 323 that functions as a dielectric is sandwiched between a pair of electrodes. It is a laminated structure. Figure 18 shows an example in which a capacitive element 560 is placed on an insulator 281. As shown, the capacitive element 560 may be provided on an insulator different from the insulator 281.

[0207] In Figure 18, conductors 801a, 801b, and 805 are formed in the same layer. This shows an example where conductors 811, 813, and 817 are the same. An example of formation in layers is shown. Also, conductor 301a, conductor 301b, and conductor 3 This shows an example where 05 is formed in the same layer. Also, conductor 311, conductor 313, conductive This shows an example in which the body 317 and the lower electrode 321 are formed in the same layer. Also, the conductor 3 31. An example is shown in which conductors 333, 335, and 337 are formed in the same layer. Furthermore, conductors 341, 343, and 347 are formed in the same layer. Examples are shown. Furthermore, conductors 351, 353, 355, and 35 This shows an example where 7 is formed in the same layer. In this way, multiple conductors can be formed in the same layer. By doing so, the manufacturing process of the display device 10 can be simplified, This can be made to be inexpensive. Furthermore, these can be formed in different layers. They may have different types of materials.

[0208] The display device 10 shown in Figure 18 has a liquid crystal element 570. The liquid crystal element 570 is a conductor 77 2. It has a conductor 774 and a liquid crystal layer 776 between them. The conductor 774 is on the substrate 70 It is provided on side 5 and functions as a common electrode. Also, conductor 772 is conductor 351 Transitions occur via conductors 341, 331, 313, and 301b. It is electrically connected to the other side of the source or drain of sta 550. Conductor 772 is insulator 3 It is formed on 63 and functions as a pixel electrode.

[0209] The conductor 772 can be made of a material that is transparent to visible light or a material that is reflective to visible light. For example, oxide materials containing indium, zinc, tin, etc., can be used as the light-transmitting material. It would be good to do so. As for reflective materials, for example, materials containing aluminum, silver, etc., would be good to use. stomach.

[0210] If a reflective material is used for the conductor 772, the display device 10 becomes a reflective liquid crystal display device. On the other hand, a translucent material is used for the conductor 772, and a translucent material is also used for the substrate 701, etc. Then, the display device 10 becomes a transmissive liquid crystal display device. In that case, a polarizing plate is provided on the viewing side. On the other hand, if the display device 10 is a transmissive liquid crystal display device In this case, a pair of polarizing plates are provided so as to sandwich the liquid crystal element.

[0211] Although not shown in Figure 18, an alignment film in contact with the liquid crystal layer 776 may also be provided. Furthermore, optical components (optical substrates) such as polarizing members, phase difference members, and anti-reflective members, and backlashes Light sources such as sidelights can be provided as appropriate.

[0212] A structure 778 is provided between the insulator 363 and the conductor 774. The structure 778 is a column. A spacer in the shape of a board, which controls the distance (cell gap) between boards 701 and 705. It has the ability to do so. Furthermore, a spherical spacer may be used as the structure 778.

[0213] On the substrate 705 side, there is a light-shielding layer 738, a colored layer 736, and an insulator 734 in contact with these. A light-shielding layer 738 is provided. The light-shielding layer 738 has the function of blocking light emitted from adjacent areas. The light-shielding layer 738 has the function of preventing external light from reaching the transistor 550, etc. The colored layer 736 is provided so as to have an area that overlaps with the liquid crystal element 570.

[0214] The liquid crystal layer 776 contains thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, and polymer dispersed liquid crystal. (PDLC: Polymer Dispersed Liquid Crystal), Polymer Network Liquid Crystal (PNLC) Crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. When employing an electric field method, a liquid crystal exhibiting a blue phase without an alignment layer may be used.

[0215] Furthermore, the modes of the liquid crystal elements include TN (Twisted Nematic) mode and V A (Vertical Alignment) mode, IPS (In-Plane Switch) itching mode, FFS (Fringe Field Switching) mode ASM (Axially Symmetric aligned Micro-c ell) mode, OCB(Optically Compensated Birefr) Ingence mode, ECB (Electrically Controlled) You can use modes such as Birefringence mode and Guest Host mode.

[0216] Furthermore, the liquid crystal layer 776 uses polymer dispersed liquid crystals, polymer network liquid crystals, etc., and scattering A liquid crystal of a certain type can also be used. In this case, a configuration is used to display in black and white without providing a colored layer 736. Alternatively, the configuration may use a colored layer 736 to perform color display.

[0217] Furthermore, as a method for driving liquid crystal elements, color display is performed based on the time-additive color mixing method, A segmentation display method (also known as a field sequential drive method) may be applied. A configuration without a colored layer 736 is possible. When using a time-division display method, for example, For example, it is not necessary to have pixels that exhibit the respective colors R (red), G (green), and B (blue). Therefore, it has advantages such as improving the aperture ratio of pixels and increasing the resolution.

[0218] The display device 10 with the configuration shown in Figure 18 uses a liquid crystal element as a display element, but the present invention The embodiment is not limited to this. Figure 19 is a modified example of the display device 10 shown in Figure 18, and the display elements The difference from the display device 10 shown in Figure 18 is that it uses a light-emitting element as a child element.

[0219] The display device 10 shown in Figure 19 has a light-emitting element 572. The light-emitting element 572 is a conductor 77 2. It has an EL layer 786 and a conductor 788. The EL layer 786 is organically modified as a light-emitting material. It may contain compounds. Or, it may contain inorganic compounds such as quantum dots. Oh, in Figure 19, transistor 554 is shown instead of transistor 550, and the capacitive element 5 Instead of 60, a capacitive element 562 is shown. Transistor 554 as shown in Figure 19. The transistor 550 can have a similar configuration, and the capacitive element 562 is the same as the capacitive element 560. A similar configuration can be adopted.

[0220] Examples of materials that can be used with organic compounds include fluorescent materials or phosphorescent materials. Furthermore, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. It is possible.

[0221] In the display device 10 shown in Figure 19, an insulator 730 is provided on the insulator 363. Here, The insulator 730 can be configured to cover a portion of the conductor 772. Also, the light-emitting element 5 72 has a translucent conductor 788 and is a top-emission type light-emitting element. The optical element 572 has a bottom emission structure that emits light towards the conductor 772, and the conductor 77 A dual emission structure may be used in which light is emitted from both 2 and the conductor 788.

[0222] The light-emitting element 572 may have a microcavity structure, as will be described in detail later. This makes it possible to extract light of a predetermined color (e.g., RGB) without creating a colored layer. The display device 10 can display in color. The configuration does not include a colored layer. This further suppresses light absorption by the colored layer. As a result, the display device 10 has high brightness. It can display images of any degree, and it can also reduce the power consumption of the display device 10. Furthermore, the EL layer 786 is formed in an island-like pattern for each pixel or in a striped pattern for each row of pixels, i.e., in a color-coded manner. Even when forming the structure, it is possible to create a configuration without a colored layer.

[0223] Furthermore, the light-shielding layer 738 is provided so as to have an area that overlaps with the insulator 730. Layer 738 is covered with an insulator 734. Also, between the light-emitting element 572 and the insulator 734 It is filled with a sealing layer 732.

[0224] Furthermore, the structure 778 is provided between the insulator 730 and the EL layer 786. Body 778 is provided between insulator 730 and insulator 734.

[0225] Figure 20 shows a modified version of the display device 10 shown in Figure 19, the difference being that a colored layer 736 is provided. It differs from the display device 10 shown in 19. By providing a colored layer 736, the light-emitting element 572 This allows for an increase in the color purity of the light extracted. This enables the display device 10 to display high-quality light. Images can be displayed. Also, for example, all the light-emitting elements 572 of the display device 10 can be set to white. Since it can be made into a light-emitting element that emits colored light, the EL layer 786 is formed by painting different colors. This is not necessary, and the pixel density of the display device 10 can be increased.

[0226] In Figures 18 to 20, transistors 441 and 601 are located within the substrate 701. A channel formation region is provided in the section, and transistors 441 and 6 Although a configuration in which OS transistors are stacked on top of 01 has been shown, one aspect of the present invention is this It is not limited to these. Figure 21 is a modified version of Figure 18, Figure 22 is a modified version of Figure 19, and Figure 23 is a variation of Figure 20. This is an example, and it is an OS transistor, not transistors 441 and 601. On top of transistors 602 and 603, transistor 800 is stacked, The location where transistor 550 or transistor 554 is provided is shown in Figures 18 to 20. This is different from the display device 10 with the configuration shown in Figures 21 to 23. The OS transistors are arranged in a three-layer stack.

[0227] Insulators 613 and 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A stator 602 and a transistor 603 are provided. The substrate 701 and the insulator 613 are also provided. A transistor or the like may be provided between the substrate 701 and the insulator 61. Between 3 and , transistors 441 and 601 shown in Figures 18 to 20 A transistor with a similar configuration may also be provided. Furthermore, transistor 602 and transistor Between the layer where transistors 603, etc., are provided and the layer where transistors 800, etc., are provided, OS transistor A transistor may be provided. Also, a layer on which a transistor 800 etc. is provided, and a transistor Between the layer on which transistor 550 or transistor 554 is provided, an OS transistor or the like is provided. It may also be provided in the layer where transistor 550 or transistor 554, etc., is provided. An OS transistor or the like may be provided in the upper layer.

[0228] Transistor 602 can be a transistor provided in circuit 40. STA 603 is a transistor or data driver provided in the gate driver circuit 21. This can be a transistor provided in circuit 22. That is, transistor 602 and The transistor 603 can be provided on layer 20 as shown in Figure 1B, etc.

[0229] Transistors 602 and 603 have a configuration similar to that of transistor 550, etc. It can be made into a transistor. Note that transistors 602 and 603 are Also as an OS transistor with a different configuration from transistors 550 and 554, etc. good.

[0230] On the insulator 614 are transistors 602 and 603, as well as insulator 616, Insulator 622, Insulator 624, Insulator 654, Insulator 644, Insulator 680, Insulator 67 4, and an insulator 681 is provided. Among the insulators 654, 644, and 680 Conductive material 461 is embedded in insulator 674 and insulator 681. Here, conductive The height of the top surface of body 461 and the height of the top surface of insulator 681 can be made to be approximately the same.

[0231] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductive body 463 is embedded. Here, the height of the top surface of the conductive body 463 and the top of the insulator 501 The surface height can be made to be approximately the same.

[0232] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductive body 465 is embedded. Here, the height of the top surface of the conductive body 465 and the top of the insulator 503 The surface height can be made to be approximately the same.

[0233] An insulator 505 is provided on the conductor 465 and on the insulator 503. A conductor 467 is embedded inside. The conductor 467 is connected to the wiring 121 to the wiring shown in Figure 19. It can be provided in the same layer as 123. Here, the height of the upper surface of the conductor 467 and the insulator The height of the top surface of the 505 can be made to be about the same.

[0234] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductive body 469 is buried. Here, the height of the top surface of the conductive body 469 and the top of the insulator 507 The surface height can be made to be approximately the same.

[0235] An insulator 509 is provided on the conductor 469 and on the insulator 507. A conductive material 471 is embedded inside. The conductive material 471 is connected to the wiring 141 to the wiring shown in Figure 19. It can be provided in the same layer as 143. Here, the height of the upper surface of the conductor 471 and the insulator The top surface height of the 509 can be made to be about the same.

[0236] Insulators 821 and 814 are provided on the conductor 471 and on the insulator 509. A conductor 853 is embedded in the edge 821 and in the insulator 814. Here, the conductor 8 The height of the top surface of 53 and the height of the top surface of the insulator 814 can be made to be approximately the same.

[0237] As shown in Figures 21 to 23, either the source or the drain of transistor 602 is a guide Electromagnetic material 461, conductor 463, conductor 465, conductor 467, conductor 469, conductor 471 Conductor 853, Conductor 855, Conductor 805, Conductor 817, Conductor 453, Conductor 4 55, Conductor 305, Conductor 317, Conductor 337, Conductor 347, Conductor 353, Conductive FPC7 It is electrically connected to 16.

[0238] Insulator 613, Insulator 614, Insulator 680, Insulator 674, Insulator 681, Insulator 50 1. Insulators 503, 505, 507, and 509 are interlayer films. It may have a function and may also function as a planarizing film that covers the uneven shape below each of them. .

[0239] By configuring the display device 10 as shown in Figures 21 to 23, the display device 10 can be made to have a narrow bezel. In order to miniaturize the device, all of the transistors in the display device 10 will be OS transistors. This makes it possible to create different types of transistors, so the table This reduces the manufacturing cost of the display device 10, making the display device 10 inexpensive. It is possible.

[0240] <Example of sub-pixel configuration> Figures 24A and 24B show subpixels 90 that can be applied to a display device according to one aspect of the present invention. This is a top view showing an example configuration of 1. The sub-pixel 901 can be configured as shown in Figure 4C. In other words, if the pixel 34 has a light-emitting element 572, then the pixel 34 is as shown in Figure 24A. And it can be configured similarly to the sub-pixel 901 shown in Figure 24B. Here, the transient In addition to the gate, the Ta 552 has a back gate, and the back gate is electrically connected to the wiring 31. It continues. In addition, transistor 554 has a back gate in addition to the gate, and the back gate The other electrode is the source or drain of transistor 554, and the other electrode of capacitive element 562. It is electrically connected to one electrode of the light-emitting element 572.

[0241] Figure 24A shows the conductors that make up the transistors, capacitive elements, wiring, etc. of the sub-pixel 901. Figure 24B shows the semiconductor, in addition to the configuration shown in Figure 24A. This shows a conductor 772 that functions as one of the electrodes. Note that Figures 24A and 2 In either case of 4B, the conductor etc. that functions as the other electrode of the light-emitting element 572 is It is omitted. Here, one electrode of the light-emitting element 572 has the function of a pixel electrode, The other electrode of the optical element 572 functions as a common electrode.

[0242] As shown in Figures 24A and 24B, the sub-pixel 901 is composed of a conductor 911 and a conductor 912. , semiconductor 913, semiconductor 914, conductor 915a, conductor 915b, conductor 91 6a, conductor 916b, conductor 917, conductor 918, conductor 919, conductor 920, conductor 921, conductor 922, conductor 923, conductor 924, conductor 925, conductor 926, conductor 927, conductor 928, conductor 929, conductor It has 930, a conductor 931, and a conductor 772.

[0243] Conductors 911 and 912 can be formed in the same process. Semiconductor 913 and The semiconductor 914 is formed in the same process, and in a process that follows that of the conductors 911 and 912. Conductors 915a and 915b, and 916a and Conductor 916b is formed in the same process, and in a process that follows conductors 911 and conductor 912. Conductors 917 and 918 are formed in the same process, and semiconductors can be formed. 913 and semiconductor 914, as well as conductors 915a, conductor 915b, conductor 916a, and It can be formed in a process after the conductor 916b.

[0244] Conductors 919 to 923 are formed in the same process, and conductors 917 and 918 It can be formed in a later process. Conductor 924 is conductor 919 to conductor 923 It can be formed in a later process. Conductors 925 to 928 are formed in the same process. Conductors 929 to conductors 924 are formed in a later process. 31 is formed in the same process and is formed in a process later than conductors 925 to 928. This can be done. Conductor 772 is formed in a later process than conductors 929 to 931. It is possible.

[0245] In this specification, etc., elements formed in the same process are provided in the same layer. Yes, it is possible. For example, conductor 911 and conductor 912 can be formed in the same process. Therefore, it can be said that conductor 911 and conductor 912 are provided in the same layer. Also, Elements formed in a later process are placed on top of elements formed in an earlier process. This is possible. For example, conductors 929 to 931 are more efficient than conductors 925 to 928. Since they can be formed in a later process, conductors 929 to 931 are conductors 92 It can be said that it is provided in a layer above the conductor 928.

[0246] Conductor 911 functions as the back gate electrode of transistor 552. 913 has a channel-forming region for transistor 552. Conductor 915a is a transistor It functions as either the source electrode or the drain electrode of the ZISTA 552. Conductor 915 b functions as either the source electrode or the drain electrode of transistor 552. Conductor 917 functions as the gate electrode of transistor 552.

[0247] Conductor 912 functions as the back gate electrode of transistor 554. 914 has a channel-forming region for transistor 554. Conductor 916a is a transistor Conductor 916 functions as either the source electrode or the drain electrode of the ZISTA 554. b functions as either the source electrode or the drain electrode of transistor 554. Conductor 918 functions as the gate electrode of transistor 554.

[0248] Conductor 919 functions as one electrode of capacitive element 562. Conductor 924, It functions as the other electrode of the capacitive element 562. The conductor 925 acts as a scanning line. The wiring 31 has the function of a data line. The conductor 929 corresponds to the wiring 3 that has the function of a data line. Corresponds to 2. Conductor 930 corresponds to wiring 35a which functions as a power line. As described above, the electroluminescent element 772 functions as one of the electrodes of the light-emitting element 572.

[0249] Conductor 911 is electrically connected to conductor 920. Conductor 912 is electrically connected to conductor 923. They are electrically connected. Conductor 915a is electrically connected to conductor 921. Conductor 9 15b is electrically connected to conductor 919. Conductor 916a is electrically connected to conductor 922. It connects to the target.

[0250] Conductor 916b is electrically connected to conductor 923. In other words, transistor 554 Conductor 912, which functions as a back gate electrode, and source power of transistor 554 A conductor 916b, which functions as the other of an electrode or drain electrode, is connected via a conductor 923. And they are electrically connected.

[0251] Conductor 917 is electrically connected to conductor 920. In other words, the transistor 552 Conductor 911, which functions as a gate electrode, and the gate electrode of transistor 552 Conductor 917, which has the function of a conductor, is electrically connected to conductor 920.

[0252] Conductor 920 is electrically connected to conductor 925. In other words, the gate of transistor 552 A conductor 917 that functions as a scan electrode and a conductor 92 that functions as a scan line. 5 and are electrically connected via the conductor 920.

[0253] Conductor 918 is electrically connected to conductor 919. Conductor 921 is electrically connected to conductor 926. They are electrically connected. Conductor 922 is electrically connected to conductor 927. Conductor 92 3 is electrically connected to conductor 928. Conductor 924 is electrically connected to conductor 928. It will continue.

[0254] Conductor 926 is electrically connected to conductor 929. In other words, the transistor 552 is connected to conductor 929. A conductor 915a that functions as either a drain electrode or a line electrode, and a data line Conductor 929, which has the function of being electrically connected, is electrically connected via conductors 921 and 926. It will continue.

[0255] Conductor 927 is electrically connected to conductor 930. In other words, the transistor 554 is connected to A conductor 916a having the function of either a drain electrode or a drain electrode, and a power line Conductor 930 having the function of, and electrically connected via conductors 922 and 927. It will continue.

[0256] Conductor 928 is electrically connected to conductor 931. Conductor 931 is electrically connected to conductor 772. It is electrically connected.

[0257] Semiconductors 913 and 914 may, for example, have metal oxides. Therefore, The transistor 552 and transistor 554 can be OS transistors.

[0258] Figure 25 shows an example of the configuration of a pixel 902 composed of sub-pixels 901 with the configuration shown in Figure 24B. This is a top view. In Figure 25, sub-pixel 901R is a sub-pixel that has the function of emitting red light. This indicates pixel 901, and sub-pixel 901G indicates sub-pixel 901 which has the function of emitting green light. Sub-pixel 901B represents sub-pixel 901 which has the function of emitting blue light. As shown in Figure 25. Pixel 902 is composed of sub-pixel 901R, sub-pixel 901G, and sub-pixel 901B. Specifically, the sub-pixels 901R and 901B are provided in the upper section, and the lower section A sub-pixel 901G is provided there, and together with this, one pixel 902 is formed. Also, in the upper row Sub-pixel 901G is provided, and sub-pixels 901R and 901B are provided in the lower row, This constitutes one pixel, 902.

[0259] In Figure 25, the sub-pixels 901R, 901G, and 901B are located in the upper section. The sub-pixels 901R, 901G, and 901B located in the lower section are each The configuration is such that it appears to be horizontally flipped. By using this configuration, the scan lines Sub-pixels 901 of the same color are alternately arranged in the direction of extension of the conductive material 925 which has the function of [unclear]. This allows a single data line to have the function of emitting light of the same color. The sub-pixel 901 can be electrically connected in this configuration. Two or more sub-pixels 901 from sub-pixels 901G and sub-pixels 901B are one data This prevents electrical connection with the power line.

[0260] Figure 26 is a cross-sectional view of the area indicated by the dashed line A1-A2 in Figure 24B. Insulator 1021 Transistors 552 and 554 are provided above. Also, transistor 5 An insulator 1022 is provided on 52 and on transistor 554, and on the insulator 1022 An insulator 1023 is provided. Furthermore, a substrate is provided below the insulator 1021. Furthermore, between the substrate and the insulator 1021, the components of layer 20 shown in Figure 1B, etc. (gate Driver circuit 21, data driver circuit 22, circuit 40, etc.), and components of layer 80 ( A multiplexer circuit (81, etc.) can be provided.

[0261] As shown in Figure 26, conductors located in different layers function as plugs. They are electrically connected via the conductor 990. For example, conductor 915a and conductor 915a The conductor 921, which is located in a higher layer, is electrically connected to the conductor 990. The electrical body 990 consists of conductors 853, 805, 453, and 30 as shown in Figure 18, etc. 5, Conductor 337, Conductor 353, Conductor 355, Conductor 357, Conductor 301a, Conductive Body 301b, conductor 331, conductor 351, conductor 333, conductor 335 have the same configuration. It is possible.

[0262] An insulator 1024 is provided on the conductors 919 to 923 and on the insulator 1023. A conductor 924 is provided on the insulator 1024. Conductor 919 and insulator 10 The capacitive element 562 is composed of 24 and the conductor 924.

[0263] An insulator 1025 is provided on the conductor 924 and on the insulator 1024. Conductor 925 An insulator 1026 is provided on the conductor 928 and on the insulator 1025. An insulator 1027 is provided on conductors 29 to 931 and on insulator 1026.

[0264] A conductor 772 and an insulator 730 are provided on the insulator 1027. Here, the insulator 7 30 can be configured to cover a portion of the conductor 772. The conductor 772 and the EL layer 7 The light-emitting element 572 is composed of 86 and the conductor 788.

[0265] An adhesive layer 991 is provided on the conductive material 788, and an insulator 992 is provided on the adhesive layer 991. The insulator 992 on the adhesive layer 991 can be formed by the following procedure. First An insulator 992 is formed on a substrate separate from the substrate on which the light-emitting elements 572, etc., are formed. Next, the conductor 788 and the insulator 992 are bonded together by the adhesive layer 991. After that, insulation The substrate on which the body 992 is formed is peeled off. Thus, the insulator 992 is formed on the conductor 788. It is possible.

[0266] A colored layer 993 is provided on the insulator 992. In Figure 26, the colored layer 993 is colored. Layer 993a and colored layer 993b are shown. On the colored layer 993, adhesive layer 994 More circuit boards 995 are bonded to it.

[0267] The colored layer 993b has the function of transmitting light of a different color than that of the colored layer 993a. For example, Pixel 902 has a sub-pixel 901R that emits red light and a sub-pixel 901R that emits green light. It consists of a sub-pixel 901G that emits blue light and a sub-pixel 901B that emits blue light, and If layer 993a has the function of transmitting red light, then the colored layer 993b transmits green light or blue light. It has the ability to transmit light.

[0268] By forming a colored layer 993 on the insulator 992, the colored layer 993 and the light-emitting element 572 Alignment can be easily performed. This makes it possible to easily align the pixels of the display device according to one aspect of the present invention. It is possible to increase the density.

[0269] <Example configuration of light-emitting element 572> Figures 27A to 27E show examples of the configuration of the light-emitting element 572. Figure 27A shows conductive This shows a structure (single structure) in which the EL layer 786 is sandwiched between the body 772 and the conductor 788. As described above, the EL layer 786 contains a light-emitting material, for example, an organic compound light-emitting material It is included.

[0270] Figure 27B shows the stacked structure of the EL layer 786. Here, the structure shown in Figure 27B In the optical element 572, the conductor 772 functions as the anode, and the conductor 788 functions as the cathode. It has a function.

[0271] The EL layer 786 consists of a hole injection layer 721, a hole transport layer 722, and an emissive layer 7 on top of the conductor 772. 23. It has a structure in which an electron transport layer 724 and an electron injection layer 725 are sequentially stacked. If body 772 functions as a cathode and conductor 788 functions as an anode, The stacking order will be reversed.

[0272] The light-emitting layer 723 has a combination of light-emitting materials and other materials as appropriate, and emits a desired light color. A configuration can be made that produces fluorescence or phosphorescence. In addition, the light-emitting layer 723 A layered structure with different light colors may also be used. In this case, the light used in each layered light-emitting layer is also important. For each substance and other materials, different materials can be used.

[0273] In the light-emitting element 572, for example, the conductor 772 shown in Figure 27B is used as a reflective electrode, and the conductor 788 is used as a semi-transmissive / semi-reflective electrode, and a micro-optical resonator (microcavity) structure is formed. This causes the light emitted from the light-emitting layer 723 contained in the EL layer 786 to resonate between the two electrodes. This can enhance the light emitted when it passes through the conductor 788.

[0274] Furthermore, the conductor 772 of the light-emitting element 572 is made of a reflective conductive material and a light-transmitting conductive material. In the case of a reflective electrode consisting of a laminated structure with an electrically conductive material (transparent conductive film), the thickness of the transparent conductive film is Optical adjustment can be performed by controlling it. Specifically, it is obtained from the light-emitting layer 723. For a given wavelength λ of light, the distance between the electrodes of conductor 772 and conductor 788 is mλ / 2 (however It is preferable to adjust the coordinates so that m is in a neighborhood of natural numbers.

[0275] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 723, the conductor 77 The optical distance from 2 to the region (emission region) where the desired light is obtained from the light-emitting layer 723, and the conductor 7 The optical distance from 88 to the region (emission region) where the desired light from the light-emitting layer 723 can be obtained, and It is preferable to adjust them so that they are in the vicinity of (2m'+1)λ / 4 (where m' is a natural number). It is important to note that the light-emitting region referred to here is the interaction between holes and electrons in the light-emitting layer 723. This shows the recombination region.

[0276] By performing such optical adjustments, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. By narrowing the torque curve, it is possible to obtain emission with good color purity.

[0277] However, in the above case, the optical distance between conductor 772 and conductor 788 is strictly speaking conductor 772 This can be described as the total thickness from the reflective region in the material to the reflective region in the conductive material 788. However, it is difficult to precisely determine the reflection regions in conductors 772 and 788. Therefore, assuming that any position on the conductors 772 and 788 is a reflection region is sufficient to explain the above. The effect can be obtained. In addition, the conductor 772 and the light-emitting element that produces the desired light The optical distance to the layer is, strictly speaking, the reflection region in conductor 772 and the emission of light from which the desired light is obtained. It can be said that this is the optical distance to the light-emitting region in the layer. However, in the conductor 772 It is difficult to precisely determine the reflective region and the light-emitting region in the light-emitting layer that produces the desired light. Because it is difficult, any position on the conductor 772 is a reflection region, and any position on the light-emitting layer from which the desired light can be obtained. The above-mentioned effect can be sufficiently obtained by assuming that the position is the light-emitting region.

[0278] The light-emitting element 572 shown in Figure 27B has a microcavity structure, and therefore the same EL layer Even if they possess the same properties, it is possible to extract light of different wavelengths (monochromatic light). Therefore, different emission colors This eliminates the need for color separation (e.g., RGB) to obtain the desired result. Therefore, it enables the realization of high resolution. This is easy. Furthermore, it can be combined with a colored layer. Additionally, a specific wavelength can be used in front of it. This makes it possible to increase the light emission intensity in the direction, thereby reducing power consumption.

[0279] Note that the light-emitting element 572 shown in Figure 27B does not necessarily have a microcavity structure. In this case, the light-emitting layer 723 is structured to emit white light, and a colored layer is provided, It is possible to extract light of a specific color (e.g., RGB). Furthermore, it forms an EL layer 786. By applying different paint colors to obtain different emission colors, it is possible to produce light of a predetermined color without creating a colored layer. It can be taken out.

[0280] At least one of the conductor 772 and the conductor 788 can be a light-transmissive electrode (transparent electrode, semi-transparent / semi-reflective electrode, etc.). When the light-transmissive electrode is a transparent electrode, the visible light transmittance of the transparent electrode shall be 40% or more. Also, in the case of a semi-transmissive / semi-reflective electrode, the visible light reflectance of the semi-transmissive / semi-reflective electrode shall be 20% or more and 80% or less, preferably 40% or more and 70% or less. Also, the resistivity of these electrodes shall preferably be 1×10 -2 Ωcm or less.

[0281] When the conductor 772 or the conductor 788 is a reflective electrode, the visible light reflectance of the reflective electrode <​​​​​​​​​​​​​​​​​​​​​​​​​​When a voltage is supplied between the conductor 772 and the conductor 788, the charge generation layer 792 generates EL Electrons are injected into one of the layers 786a and EL layer 786b, and holes are injected into the other. It has the function of entering. Therefore, the potential of conductor 772 becomes higher than the potential of conductor 788. When voltage is supplied in this manner, electrons are injected from the charge generation layer 792 to the EL layer 786a, Holes will be injected from the load generation layer 792 into the EL layer 786b.

[0284] Furthermore, the charge generation layer 792 transmits visible light (specifically, from the viewpoint of light extraction efficiency). It is preferable that the visible light transmittance of the charge generation layer 792 is 40% or more. The conductivity of the generation layer 792 is lower than the conductivity of the conductor 772 or the conductivity of the conductor 788. That's good too.

[0285] The configuration of the light-emitting element 572 may be as shown in Figure 27D. Figure 27D shows a conductor 77 Between 2 and the conductor 788 are three EL layers (EL layer 786a, EL layer 786b, and EL layer 786c) is provided, between EL layer 786a and EL layer 786b, and between EL layer 786b and This shows a light-emitting element 572 with a tandem structure having a charge generation layer 792 between it and the EL layer 786c. Here, EL layer 786a, EL layer 786b, and EL layer 786c are E as shown in Figure 27B. The configuration can be the same as that of the L layer 786. The light-emitting element 572 can be configured as shown in Figure 27D. By doing so, the current efficiency and external quantum efficiency of the light-emitting element 572 can be further increased. Therefore, the display device 10 can display images with even higher brightness. Power consumption can be further reduced by 10.

[0286] The configuration of the light-emitting element 572 may be as shown in Figure 27E. Figure 27E shows a conductor 77 Between 2 and the conductor 788 are n layers of EL (EL layer 786(1) to EL layer 786(n)). A tandem structure is provided, with a charge generation layer 792 between each EL layer 786. The optical element 572 is shown. Here, EL layers 786(1) to EL layers 786(n) are shown in Figure 27B. The same configuration as the EL layer 786 shown in Figure 27E can be used. Of the 6, EL layer 786(1), EL layer 786(m), EL layer 786(m+1), and E The L layer is shown as 786(n). Here, m is an integer between 2 and n, and n is greater than m. Let n be an integer. The larger the value of n, the higher the current efficiency and external quantum efficiency of the light-emitting element 572. This allows for the display of a high-brightness image on the display device 10. Furthermore, The power consumption of the display device 10 can be reduced.

[0287] <Materials of the light-emitting element 572> Next, we will describe the constituent materials that can be used in the light-emitting element 572.

[0288] <<Conductors 772 and 788>> Conductors 772 and 788 can fulfill the functions of an anode and a cathode, respectively, as follows: The materials shown can be used in appropriate combinations. For example, metals, alloys, and electrically conductive compounds. Substances and mixtures thereof can be used as appropriate. Specifically, In-Sn oxide ( ITO (also known as ITO), In-Si-Sn oxide (also known as ITSO), In-Zn oxide, In-W-Zn oxide is one example. Other examples include aluminum (Al), titanium (Ti), Chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) Copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), Molybdenum (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold Metals such as (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd). , and alloys containing these in appropriate combinations can also be used. Other examples not listed above Elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), i Rare earth metals such as terbium (Yb) and alloys containing them in appropriate combinations, and other grains. Fens and the like can be used.

[0289] <<Hole injection layer 721 and hole transport layer 722>> The hole injection layer 721 is transferred from the anode conductor 772 or the charge generation layer 792 to the EL layer 786. This is a hole-injection layer, and it contains a material with high hole-injection potential. Here, EL layer 786 These are EL layer 786a, EL layer 786b, EL layer 786c, and EL layer 786(1) to E The L layer is assumed to include 786(n).

[0290] Materials with high hole injection potential include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples include transition metal oxides such as tungsten oxide and manganese oxide. In addition, Phthalocyanines such as thalocyanine (abbreviated as H2Pc) and copper phthalocyanine (abbreviated as CuPc) Nin compounds, 4,4'-bis[N-(4-diphenylaminophenyl)-N-phen [Diamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylf [phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviation: DNTPD), or poly(3,4-eth Dioxythiophene / Poly(styrene sulfonate) (Abbreviation: PEDOT / PSS) Polymers such as the above can be used.

[0291] Furthermore, materials with high hole injection potential include hole transport materials and acceptor materials (electron acceptors). Composite materials containing (accepting materials) can also be used. In this case, the acceptor material provides a positive result. Electrons are extracted from the pore-transporting material, generating holes in the hole injection layer 721, and the hole transport layer 72 Holes are injected into the light-emitting layer 723 via 2. The hole injection layer 721 is a hole transport material. It may also be formed as a single layer of a composite material containing a material and an acceptor material (electron-accepting material). However, if hole transport material and acceptor material (electron-accepting material) are stacked in separate layers... It may be formed in layers.

[0292] The hole transport layer 722 discharges the holes injected from the conductor 772 by the hole injection layer 721. This is the layer that transports to the light layer 723. The hole transport layer 722 is a layer containing a hole transport material. Yes. The hole transport material used in the hole transport layer 722 is particularly the HOMO standard of the hole injection layer 721. It is preferable to use a device that has the same or a similar HOMO level.

[0293] The acceptor material used in the hole injection layer 721 is from Group 4 of the periodic table. Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, oxide Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Rhenium oxide is one example. In particular, molybdenum oxide is stable even in the atmosphere and absorbs It is preferable because it has low moisture content and is easy to handle. Other options include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. It contains 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane ( Abbreviation: F4-TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1 ,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), etc. are used. It is possible.

[0294] The hole transport material used in the hole injection layer 721 and the hole transport layer 722 is 10 -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. If the substance is suitable, other substances can be used.

[0295] Examples of hole transport materials include π-electron-rich heteroaromatic compounds (for example, carbazole derivatives and Indole derivatives) and aromatic amine compounds are preferred, and a specific example is 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NP) D) N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-bi Phenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9 ,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB) ), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine ( Abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) Riphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9 H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[4 -(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: P CPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2 -yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole] -3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: P CBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole- 3-Iyl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4 '-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PC) BANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol) 9,9-dimethyl-N- Phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]flu Oren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl- 9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (Abbreviation: PCBASF), 4,4',4''-tris(carbazole-9-yl)tri Phenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenylamine) Mino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3 [-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA) Compounds having aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviated) Name: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6 -Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP) ,3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP),3-[N -(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole Bazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole- 3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) ), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino ]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4-( N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl Carbazole (abbreviated as CzPA), such as 9-anthracenyl phenyl carbazole. Compounds having a basol skeleton, 4,4',4''-(benzene-1,3,5-triyl) Tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated) Name: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl] Thio Compounds having a fen skeleton, 4,4',4''-(benzene-1,3,5-triyl) Li(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl- 9H-Fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBF) Examples include compounds having a furan skeleton, such as FLBi-II.

[0296] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphen Nylamine (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl [amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( Abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis High molecular weight compounds such as (phenyl)benzidine (abbreviated as Poly-TPD) can also be used. can.

[0297] However, the hole transport material is not limited to the above, and may be one or more known materials combined. Combined, the hole injection layer 721 and hole transport layer 722 are used as hole transport materials. Yes, it is possible. Furthermore, the hole transport layer 722 may be formed from multiple layers. For example, For example, a first hole transport layer and a second hole transport layer may be stacked on top of each other.

[0298] <<Emitting layer 723>> The luminescent layer 723 is a layer containing luminescent material. The luminescent material can be blue, purple, or blue-violet. Substances that emit light in various colors such as green, yellow-green, yellow, orange, and red are used as appropriate. Here, Figure As shown in Figures 27C to 27E, if the light-emitting element 572 has multiple EL layers, each By using different light-emitting materials in the light-emitting layer 723 provided in the EL layer, different light emission can be achieved. A composition that exhibits color (for example, white light emission obtained by combining complementary colors) and This is possible. For example, if the light-emitting element 572 has the configuration shown in Figure 27C, then the EL layer 7 The light-emitting material used in the light-emitting layer 723 provided in 86a, and the light-emitting material provided in the EL layer 786b By using a different light-emitting material in the light-emitting layer 723, the EL layer 786a exhibits a different characteristic. The emitted color can be made different from the emitted color exhibited by the EL layer 786b. The light-emitting layer may have a laminated structure with different light-emitting materials.

[0299] Furthermore, the light-emitting layer 723 contains one or more organic compounds in addition to the light-emitting substance (guest material). It may also contain (host material, assist material). Furthermore, it may contain one or more types of organic compounds. For this purpose, hole-transporting materials, electron-transporting materials, or both can be used.

[0300] There are no particular limitations on the luminescent material that can be used in the luminescent layer 723, and the singlet excitation energy A light-emitting material that converts energy into visible light emission, or a triplet excitation energy in the visible light region A light-emitting substance that converts light into light can be used. Examples of such light-emitting substances include: The following are some examples.

[0301] Examples of light-emitting materials that convert singlet excitation energy into light include fluorescent materials. Examples include pyrene derivatives, anthracene derivatives, triphenylene derivatives, and ful Orene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives Examples include pyrene derivatives, phenanthrene derivatives, and naphthalene derivatives. In particular, pyrene derivatives are luminescent. It is preferable because it has a high quantum yield. A specific example of a pyrene derivative is N,N'-bis(3-methyl (Tylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N '-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis (Dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation) :1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N' -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diamine) Len-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan) )-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diamine) (Lu)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine]( Abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[( 6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine](abbreviation: Examples include 1,6BnfAPrn-03). Furthermore, pyrene derivatives are used in one embodiment of the present invention. This group of compounds is useful for achieving a blue chromaticity.

[0302] In addition, 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B) Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-Cal Bazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-di Phenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-di Phenyl-N-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazo 4-(10-phenyl-9-anthryl)-4 (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PC) BAPA), 4-[4-(10-phenyl-9-antryl)phenyl]-4'-(9- Phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPBA) ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP) ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- Phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviated) Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-A Nantrillyl]phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N -[4-(9,10-diphenyl-2-antryl)phenyl]-N,N',N'-triphenyl Phenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), etc., can be used. ru.

[0303] Furthermore, examples of light-emitting materials that convert triplet excitation energy into light include phosphorescent materials. The quality (phosphorescent material) and thermally activated delayed fluorescence (Thermally activated delayed fluorescence) Examples include tivated delayed fluorescence (TADF) materials. It can be done.

[0304] Examples of phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. These exhibit different emission colors (emission peaks) depending on the substance, so select as appropriate as needed. Select and use.

[0305] It exhibits a blue or green color, and the peak wavelength of its emission spectrum is between 450 nm and 570 nm. Examples of phosphorescent materials include the following substances:

[0306] For example, Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazole-3-yl-κN2]phenyl-κC}iridium (III) (Abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4) -Diphenyl-4H-1,2,4-Triazolat) Iridium(III) (Abbreviation: [Ir (Mptz)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl Iridium(III) (abbreviation: [Ir(iPrp) Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl]), Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl Iridium(III) (abbreviation: [Ir(iPr5) Organometallic complexes having a 4H-triazole skeleton, such as btz)3]), Tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolate Iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), Tris(1-methicone) Iridium(II) 5-phenyl-3-propyl-1H-1,2,4-triazolato) I) (abbreviation: [Ir(Prptz1-Me)3]) has a 1H-triazole skeleton The organometallic complex, fac-tris[1-(2,6-diisopropylphenyl)-2-f [Enyl-1H-imidazole] Iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] Phenanthridine Iridium (III) (Abbreviation: Ir(dmpimpt-Me)3) Organometallic complexes having an imidazole skeleton such as ]), bis[2-(4',6'-diflu Olophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazo Lyl) Borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)p Riginato-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), S[2-(3,5-bistrifluoromethylphenyl)pyridinate-N,C 2’ Iridi Um(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[ 2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium (III ) acetylacetonate (abbreviation: Fir(acac)) and other compounds that have an electron-withdrawing group Examples include organometallic complexes using nylpyridine derivatives as ligands.

[0307] It exhibits a green or yellow color, and the peak wavelength of its emission spectrum is between 495 nm and 590 nm. Examples of phosphorescent materials include the following substances:

[0308] For example, Tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation) :[Ir(mppm)3]), Tris(4-t-butyl-6-phenylpyrimidinato) Lydium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonate) Iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4) -Phenylpyrimidina) Iridium(III) (Abbreviation: [Ir(tBuppm)2(a (cac)), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato] Iridium(III) (Abbreviation: [Ir(nbppm)2(acac)]) (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Lupyrimidinat] Iridium(III) (Abbreviation: [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl [phenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation) :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( Organometallic iridium complexes having a pyrimidine skeleton such as (acac), (acetylated iridium complexes Setonato)bis(3,5-dimethyl-2-phenylpyradinate)iridium(III) Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -Isopropyl-3-methyl-2-phenylpyradinato) Iridium(III) (abbreviation: Organometallic compounds with a pyrazine skeleton, such as [Ir(mppr-iPr)2(acac)]). Iridium complex, Tris(2-phenylpyridinato-N,C) 2’ Iridium (III) (Abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C) 2’ ) Iridi Um(III)acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), Su(benzo[h]quinolinate)iridium(III)acetylacetonate (abbreviation: [I r(bzq)2(acac)]), Tris(benzo[h]quinolinate) Iridium(II I) (abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C) 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinazole) N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a Organometallic iridium complexes having a pyridine skeleton such as cac), bis(2,4-di) Phenyl-1,3-oxazolato-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluoro) Phenyl)phenyl]pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzo) Thiazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( In addition to organometallic complexes such as bt)2(acac)]), tris(acetylacetonate)(mono) Phenanthroline Terbium(III) (Abbreviation: [Tb(acac)3(Phen)] Examples include rare earth metal complexes such as ).

[0309] Among those mentioned above, those having a pyridine skeleton (especially a phenylpyridine skeleton) or a pyrimidine skeleton Organometallic iridium complexes are useful for achieving the green chromaticity in one aspect of the present invention. It is a composite group.

[0310] It exhibits a yellow or red color, and the peak wavelength of its emission spectrum is between 570 nm and 750 nm. Examples of phosphorescent materials include the following substances:

[0311] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrim [Dinato] Iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), Su[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Zium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (Dipivaloylmethic acid) Thanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III Organic compounds having a pyrimidine skeleton, such as (abbreviation: [Ir(d1npm)2(dpm)]) Metal complex, (acetylacetonato)bis(2,3,5-triphenylpyradinato)iridi Um(III) (abbreviation: [Ir(tppr)2(acac)]), Bis(2,3,5-) Iridium(III) (dipivaloylmethanato) (abbreviation: [Ir (tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl-2)} [Phenyl-5-phenyl-2-pyradinyl-κN]phenyl-κC}(2,6-dimethyl Chil-3,5-heptandionato-κ 2 O,O') Iridium(III) (Abbreviation: [Ir (dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazi [Nyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanediol) Nato-κ 2 O,O') Iridium(III) (Abbreviation: [Ir(dmdppr-dmCP) 2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxali Nato-N,C 2’ Iridium(III) (abbreviation: Ir(mpq)2(acac)) (Acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ ) Iri Dium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonate) )Bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) Organometallic compounds with a pyrazine skeleton, such as (abbreviation: [Ir(Fdpq)2(acac)]) Complexes, or Tris(1-phenylisoquinolinato-N,C) 2’ ) Iridium (III) (abbreviated) Name: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iridi Um(III)acetylacetonate (abbreviation: [Ir(piq)2(acac)]) Organometallic complexes having a pyridine skeleton, 2,3,7,8,12,13,17,18-O The ethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Platinum complex, Tris(1,3-diphenyl-1,3-propanedionato)(monofena Europium(III) (abbreviation: [Eu(DBM)3(Phen)]), RIS[1-(2-tenoyl)-3,3,3-trifluoroacetonate](monophenant) Like Europium(III) (abbreviation: [Eu(TTA)3(Phen)]) Rare earth metal complexes are one example.

[0312] Among those described above, organometallic iridium complexes having a pyrazine skeleton are used in one aspect of the present invention. This is a group of compounds useful for achieving a certain red chromaticity. In particular, [Ir(dmdppr-dm Organometallic iridium complexes having a cyano group, such as CP)2(dpm), have high stability. It is preferable.

[0313] Furthermore, as for blue light-emitting materials, the photoluminescence peak wavelength is 430 nm or higher. A material with a wavelength of 70 nm or less, more preferably 430 nm to 460 nm, may be used. Furthermore, as for green light-emitting materials, the peak wavelength of photoluminescence is 500 nm or higher. A material with a wavelength of 0 nm or less, more preferably 500 nm to 530 nm, may be used. (Red) As for light-emitting materials, those with a photoluminescence peak wavelength of 610 nm to 680 nm More preferably, a material with a wavelength of 620 nm to 680 nm should be used. Luminescence measurements can be performed using either a solution or a thin film.

[0314] By using such compounds in combination with the microcavity effect, the aforementioned colors can be more easily achieved. This degree can be achieved. At this time, the semi-permeable material necessary to obtain the microcavity effect... The film thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm to 40 nm. More preferably... More specifically, it is greater than 25nm and less than or equal to 40nm. Note that efficiency decreases above 40nm. There is a possibility that this will happen.

[0315] The organic compounds (host material, assist material) used in the light-emitting layer 723 include light-emitting substances ( A material having an energy gap larger than the energy gap of the (stock material) Alternatively, multiple types can be selected and used. Furthermore, the hole transport materials mentioned above and the electron transport materials described later are also applicable. The feeding materials can also be used as either host materials or assist materials.

[0316] When the light-emitting material is a fluorescent material, the host material has an energy level of singlet excited state. It is preferable to use an organic compound with a large θ and a low energy level in the triplet excited state. For example, it is preferable to use anthracene derivatives or tetracene derivatives. Specifically, 9 -phenyl-3-[4-(10-phenyl-9-antryl)phenyl]-9H-carb Zole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracol [Cenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl] [nyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis Examples include (biphenyl-2-yl)tetracene.

[0317] When the luminescent material is a phosphorescent material, the host material is the triplet excitation energy of the luminescent material. (The energy difference between the ground state and the triplet excited state) is greater than the triplet excitation energy. You should select the appropriate compound. In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxali Dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, fer In addition to nanthroline derivatives, aromatic amines and carbazole derivatives can also be used. .

[0318] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Ris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq) 2) Bis(2-methyl-8-quinolinolate)(4-phenylphenolate)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq) ), bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviation: ZnPB) O), bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviation: ZnBT) Metal complexes such as Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) -1,3,4-Oxadiazole (abbreviation: PBD), 1,3-Bis[5-(p-tert [-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OX D-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl (Nyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5 (-benzenetriyl)-tris(1-phenyl-1H-benzoimidazole) (abbreviation: T) PBI), vasophenanthroline (abbreviation: BPhen), vasocuproin (abbreviation: BC) P), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phena Botroline (abbreviation: NBphen), 9-[4-(5-phenyl-1,3,4-oxadi Heterocyclic morphology of azole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), etc. Examples include aromatic amine compounds such as compound compounds, NPB, TPD, and BSPB.

[0319] Also, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Examples include condensed polycyclic aromatic compounds such as benzo[g,p]chrysene derivatives, and specifically, 9 ,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-antryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-phenyl-9H-carbazole-3-yl)aminoanthracene (abbreviation: 2PCA) PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -Anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-diph Phenyl-9-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole Lu (abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthrace d(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD) NA), 9,9'-biantril (abbreviation: BANT), 9,9'-(stilbene-3,3 '-Diphenanthrene (abbreviation: DPNS), 9,9'-(Stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviated as TPB3), etc., can be used.

[0320] Furthermore, when multiple organic compounds are used in the light-emitting layer 723, the compounds that form the excitation complex emit light. It is preferable to use it in mixture with other substances. In this case, various organic compounds can be used in appropriate combinations. It can be used, but in order to efficiently form an excited complex, it is necessary to make it easier to accept holes. By combining a composite material (hole-transporting material) with a compound that readily accepts electrons (electron-transporting material) It is particularly preferable to combine them. Furthermore, specific examples of hole-transporting materials and electron-transporting materials are provided below. The materials shown in this embodiment can be used.

[0321] TADF materials are materials that can be converted from a triplet excited state to a singlet excited state by a small amount of thermal energy. It enables reverse intersystem crossing (op-conversion) and efficiently generates light (fluorescence) from the singlet excited state. It refers to materials that exhibit this phenomenon. Furthermore, the conditions under which thermally activated delayed fluorescence can be efficiently obtained are three The energy difference between the doublet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably. One example is that the voltage is between 0 eV and 0.1 eV. Also, regarding delayed fluorescence in TADF materials... Light refers to emission that has a spectrum similar to ordinary fluorescence but with a significantly longer lifetime. Its lifespan is 10 -6 10 seconds or more, preferably 10 -3 It is more than a second.

[0322] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavin. Examples include derivatives and eosin. Also, magnesium (Mg), zinc (Zn), cadmium Um (Cd), tin (Sn), platinum (Pt), indium (In), or palladium Examples of metal-containing porphyrins include those containing (Pd), etc. For example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), meso Porphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin- Tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl Ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethyl Porphyrin-tin fluoride complex (SnF2(OEP)), Ethioporphyrin-tin fluoride SnF2(Etio I) complex, octaethylporphyrin-platinum chloride complex (Pt Examples include Cl2OEP.

[0323] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[ 2,3-a]carbazole-11-yl)-1,3,5-triazine (PIC-TRZ) , 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol [Il-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (PCCz PTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6- Diphenyl-1,3,5-triazine (PXZ-TRZ), 3-[4-(5-phenyl- 5,10-Dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2 ,4-triazole (PPZ-3TPT), 3-(9,9-dimethyl-9H-acrylidine) -10-il)-9H-xanthen-9-on(ACRXTN),bis[4-(9,9- Dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]- π-electron-rich and π-electron-deficient heteroaromatic rings such as 10'-one (ACRSA) Heterocyclic compounds having the above characteristics can be used. Substances directly bonded to a foot-shaped heteroaromatic ring exhibit the characteristics of a donor and π-electron-excess heteroaromatic ring. The acceptor properties of the foot-shaped complex aromatic rings become stronger, and the singlet and triplet excited states are enhanced. This is particularly preferable because it reduces the energy difference.

[0324] Furthermore, when using TADF materials, they can also be used in combination with other organic compounds.

[0325] <<Electron transport layer 724>> The electron transport layer 724 emits electrons injected from the conductor 788 by the electron injection layer 725. This is the layer that transports electrons to the optical layer 723. The electron transport layer 724 is a layer containing an electron transport material. Yes, there is. The electron transport material used in the electron transport layer 724 is 1 × 10 -6 cm 2 / Vs or more A material with electron mobility is preferred. Furthermore, any material with higher electron transport capabilities than hole transport is preferred. Other materials can be used.

[0326] Examples of electron transport materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. , or metal complexes having thiazole ligands, oxadiazole derivatives, triazoles Examples include derivatives, phenanthroline derivatives, pyridine derivatives, and bipyridine derivatives. In addition, π-electron-deficient heteroaromatic compounds, such as nitrogen-containing heteroaromatic compounds, can also be used. can.

[0327] Specifically, Alq3, Tris(4-methyl-8-quinolinolato)aluminum(III )(Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (Abbreviation: BeBq2), BAlq, Zn(BOX)2, bis[2-(2-hydroxyphosphate) Metal complexes such as [zinc(II)(b (4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadi Azole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-Oxadiazole-2-yl]benzene (abbreviation: OXD-7), 3-(4'- tert-butylphenyl)-4-phenyl-5-(4''-biphenyl)-1,2,4 -Triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4- Ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p- EtTAZ), vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviated) Name: Heteroaromatic compounds such as BzOs, 2-[3-(dibenzothiophen-4-yl) [enyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[ 3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h] Noxaline (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl- 9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2 CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibe Nzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(diben Zothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDB) Use quinoxalines or dibenzoquinoxaline derivatives such as TPDBq-II. It is possible.

[0328] Also, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl Fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)(abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' Using polymer compounds such as (-bipyridine-6,6'-diyl) (abbreviation: PF-BPy) It is possible to stay there.

[0329] Furthermore, the electron transport layer 724 is not only a single layer, but also consists of two or more layers made of the above material stacked together. It may also be a structure like that.

[0330] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a material with high electron injection potential. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), Lithium oxide (LiO x Alkali metals, alkaline earth metals, or similar materials such as ) Compounds can be used. Also, rare earth metals such as erbium fluoride (ErF3) can be used. Compounds can be used. Alternatively, electrides may be used in the electron injection layer 725. As an electride, for example, a mixed oxide of calcium and aluminum is used to increase the electron content. Examples include substances added in concentration. Furthermore, the substances constituting the electron transport layer 724 described above are used. It is possible to stay there.

[0331] Furthermore, the electron injection layer 725 is a composite material made by mixing an organic compound and an electron donor. Materials may be used. In such composite materials, electrons are generated in the organic compound by the electron donor. Therefore, it has excellent electron injection and electron transport properties. In this case, as an organic compound, It is preferable that the material is excellent in transporting the generated electrons, specifically, for example, the electrons mentioned above The electron transport material (such as a metal complex or heteroaromatic compound) used in the transport layer 724 is Yes, it is possible. Any substance that exhibits electron-donating properties towards organic compounds can be used as the electron donor. Physically, alkali metals, alkaline earth metals, and rare earth metals are preferred, as are lithium and cesium. Examples include magnesium, calcium, erbium, and ytterbium. Also, Lucalic metal oxides and alkaline earth metal oxides are preferred, as are lithium oxides and calcium acid Examples include nitrides and barium oxides. Additionally, Lewis bases such as magnesium oxide can be used. It is also possible to use organic compounds such as tetrathiafulvalene (abbreviated as TTF). It is also possible to do so.

[0332] <<Charge generation layer 792>> When a voltage is applied between the conductor 772 and the conductor 788, the charge generation layer 792 generates the charge. Of the two EL layers 786 in contact with the charge generation layer 792, the EL layer 7 that is closer to the conductor 772 It has the function of injecting electrons into 86 and injecting holes into the EL layer 786 on the side closer to the conductor 788. For example, in the light-emitting element 572 with the configuration shown in Figure 27C, the charge generation layer 792 is EL It has the function of injecting electrons into layer 786a and holes into EL layer 786b. The generation layer 792 had a configuration in which electron acceptors were added to a hole transport material. However, the configuration may also involve adding an electron donor to the electron transport material. Both of these configurations may be stacked. Furthermore, the charge generation layer 7 may be made using the materials described above. By forming 92, the driving voltage of the display device 10 when the EL layer is stacked is It can suppress the rise.

[0333] In the charge generation layer 792, if an electron acceptor is added to the hole transport material, As an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoro Examples include quinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically These are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, and tartium oxide. Examples include ngsten, manganese oxide, and rhenium oxide.

[0334] In the charge generation layer 792, if an electron donor is added to the electron transport material, As electron donors, alkali metals, alkaline earth metals, rare earth metals, or elements from the periodic table. Metals belonging to groups 2 and 13 in the region, as well as their oxides and carbonates, can be used. Physically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca, ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is preferable to use an organic compound such as tetrathianaphthalene as an electron donor. It may be used as such.

[0335] The light-emitting element 572 was fabricated using vacuum processes such as vapor deposition, as well as spin coating and ink coating. Solution processes such as the jet method can be used. When using the vapor deposition method, sputtering is used. Physical methods such as ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition. Vapor deposition (PVD) and chemical vapor deposition (CVD) methods can be used. In particular, light-emitting elements can be produced. Functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) ) and the charge generation layer are prepared using a vapor deposition method (vacuum deposition method, etc.) and a coating method (dip coating method, etc.) (Inkjet method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet Jet printing, screen printing, offset printing, flexographic printing It can be formed by methods such as the ) method, gravure method, microcontact method, etc.

[0336] In this embodiment, each functional layer constituting the EL layer of the light-emitting element (hole injection layer, hole transport layer) is shown. The layers (luminescent layer, electron transport layer, electron injection layer) and charge generation layer are limited to the materials described above. However, other materials can be used in combination as long as they can fulfill the function of each layer. This is possible. One example is high-molecular-weight compounds (oligomers, dendrimers, polymers, etc.). ), medium-molecular-weight compounds (compounds in the intermediate region between low molecular weight and high molecular weight: molecular weight 400-4000), none Mechanical compounds (such as quantum dot materials) can be used. colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, Core-type quantum dot materials and the like can be used.

[0337] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., are at least partially accurate. This can be implemented in combination with other configuration examples or drawings as appropriate.

[0338] This embodiment can be appropriately combined with other embodiments described herein, at least in part. They can be implemented together.

[0339] (Embodiment 2) In this embodiment, a transistor that can be used in a display device according to one aspect of the present invention is I will explain about this.

[0340] <Transistor Configuration Example 1> Figures 28A, 28B, and 28C can be used in a display device according to one aspect of the present invention. These are a top view and a cross-sectional view of transistor 200A and the area surrounding transistor 200A. A transistor 200A can be applied to a display device according to one aspect of the present invention.

[0341] Figure 28A is a top view of transistor 200A. Figures 28B and 28C are also shown. This is a cross-sectional view of transistor 200A. Here, Figure 28B is a cross-sectional view of A1-A2 in Figure 28A. This is a cross-sectional view of the area indicated by the dashed line, and is also a cross-sectional view of transistor 200A in the channel length direction. Yes. Also, Figure 28C is a cross-sectional view of the area shown by the dashed line A3-A4 in Figure 28A. This is also a cross-sectional view of transistor 200A in the channel width direction. Note that in the top view of Figure 28A... Some elements have been omitted from the diagram for clarity.

[0342] As shown in Figure 28, transistor 200A is placed on a substrate (not shown). Metal oxide 230a, metal oxide 230b disposed on top of metal oxide 230a, and gold Conductors 242a and 242 are arranged on the group oxide 230b at a distance from each other. b and are arranged on the conductors 242a and 242b, and the conductors 242a and 242 An insulator 280 with an opening formed between b, a conductor 260 placed inside the opening, and a metal Oxide 230b, conductor 242a, conductor 242b, and insulator 280, and conductor 260 An insulator 250, metal oxide 230b, conductor 242a, and conductor 2 are positioned between them. 42b, and the metal oxide 230c disposed between the insulator 280 and the insulator 250. , has. Here, as shown in Figures 28B and 28C, the upper surface of the conductor 260 is insulating The upper surfaces of body 250, insulator 254, metal oxide 230c, and insulator 280 are substantially aligned. This is preferable. In the following, metal oxide 230a, metal oxide 230b, and gold The group oxides 230c are sometimes collectively referred to as metal oxides 230. Also, conductor 242a In some cases, the conductor 242b is collectively referred to as conductor 242.

[0343] In the transistor 200A shown in Figure 28, the conductors 242a and 242b The side of the 60 has a roughly vertical shape. Note that transistor 200 is shown in Figure 28. A is not limited to the above, but the side and bottom surfaces of conductors 242a and 242b The angle formed may be 10° or more and 80° or less, preferably 30° or more and 60° or less. Furthermore, the opposing sides of the conductor 242a and conductor 242b may have multiple surfaces. .

[0344] Also, as shown in Figure 28, insulator 224, metal oxide 230a, metal oxide 230b, Between the conductor 242a, conductor 242b, and metal oxide 230c, and the insulator 280, It is preferable that an insulator 254 is provided. Here, the insulator 254 is shown in Figures 28B and 2 As shown in 8C, the side surface of metal oxide 230c, the top and side surfaces of conductor 242a, and conductor 2 The top and side surfaces of 42b, the side surfaces of metal oxide 230a and metal oxide 230b, and the insulator It is preferable that it be in contact with the upper surface of 224.

[0345] In transistor 200A, the channel is formed in the channel formation region (hereinafter referred to as the channel formation region). Also known as ) and in its vicinity, metal oxide 230a, metal oxide 230b, and gold The present invention is not limited to a configuration in which three layers of the 230c oxide are stacked. It is not that. For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure. The above layered structure may also be used. In addition, in transistor 200A, conductor 2 Although 60 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, The conductor 260 may have a single-layer structure or a laminated structure of three or more layers. Furthermore, each of metal oxides 230a, 230b, and 230c is It may have a laminated structure of two or more layers.

[0346] For example, metal oxide 230c is a first metal oxide and a second metal acid on the first metal oxide When it has a layered structure consisting of oxides, the first metal oxide is similar to metal oxide 230b. The second metal oxide has a composition, and it is preferable that the second metal oxide has a composition similar to that of metal oxide 230a. It's nice.

[0347] Here, the conductor 260 functions as the gate electrode of the transistor, and the conductor 242a and The conductor 242b functions as either a source electrode or a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. It is formed to be embedded in the region. Here, conductor 260, conductor 242a and conductor The arrangement of the electric element 242b is selected in a self-aligned manner with respect to the opening of the insulator 280. In transistor 200A, the gate electrode is placed between the source electrode and the drain electrode. They can be arranged in a self-aligned manner. Therefore, a margin for alignment is provided for the conductor 260. Because it can be formed without any modifications, the occupied area of ​​transistor 200A is reduced. This makes it possible to increase the pixel density of the display device. This allows for a narrower bezel.

[0348] Furthermore, as shown in Figure 28, the conductor 260 is a conductor 2 provided inside the insulator 250. 60a and a conductor 260b provided so as to be embedded inside the conductor 260a, It is preferable to have it.

[0349] Furthermore, transistor 200A is connected to an insulator 214 placed on a substrate (not shown) and an insulator 216 placed on top of the insulator 214, and a component arranged to be embedded in the insulator 216. The conductor 205 is placed, and the insulator 216 and the insulator 222 are placed on top of the conductor 205. Preferably, the insulator 224 is disposed on top of the insulator 222. It is preferable that the metal oxide 230a is placed on top of 4.

[0350] Furthermore, on top of the transistor 200A, there is an insulator 274 that functions as an interlayer film, and an insulator 2 It is preferable that 81 is arranged. Here, the insulator 274 is the conductor 260, the insulator 25 0, insulator 254, metal oxide 230c, and are arranged in contact with the upper surface of insulator 280 This is preferable.

[0351] Insulators 222, 254, and 274 contain hydrogen (e.g., hydrogen atoms, hydrogen molecules). It is preferable that the insulator 22 has the function of suppressing the diffusion of at least one of the following. 2. Insulators 254 and 274 are insulators 224, 250 and 28 It is preferable that the hydrogen permeability is lower than 0. Also, insulators 222 and 254 are acid It is preferable that the material has the function of suppressing the diffusion of elements (e.g., oxygen atoms, oxygen molecules, etc.). For example, insulator 222 and insulator 254 are insulator 224, insulator 250, and insulator 2 A lower oxygen permeability than 80 is preferable.

[0352] Here, insulator 224, metal oxide 230, and insulator 250 are insulator 280 and insulating Body 281 is separated by insulator 254 and insulator 274. Therefore, the insulator 224, metal oxide 230, and insulator 250, and insulator 280 and insulator 281 are contained in This can suppress the inclusion of impurities such as hydrogen, as well as excess oxygen.

[0353] Furthermore, the conductor 240 (conductor) is electrically connected to transistor 200A and functions as a plug. It is preferable that an electric element 240a and a conductor 240b are provided. Insulator 241 (insulator 241a, and insulator 241) in contact with the side surface of the functional conductor 240 b) is provided. That is, insulator 254, insulator 280, insulator 274, and insulator 2 An insulator 241 is provided in contact with the inner wall of the opening 81. Also, in contact with the side surface of the insulator 241 A first conductive element of the conductor 240 is provided, and further inside, a second conductive element of the conductor 240 is provided. The configuration may be such that the upper surface of the conductor 240 and the upper surface of the insulator 281 are considered. The surface height can be made to be approximately the same. Note that in transistor 200A, the first conductor of conductor 240 The present invention shows a configuration in which the electrolytic body and the second conductive material of the conductive material 240 are laminated, but the present invention is This is not limited to the above. For example, the conductor 240 may be a single layer or a laminated structure of three or more layers. The structure may be configured to be provided in this way. If the structure has a layered structure, an ordinal number may be assigned in the order of formation, and the section They may be treated differently.

[0354] Furthermore, transistor 200A includes a metal oxide 230 (metal oxide) that contains a channel formation region. 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter also called an oxide semiconductor). For example, gold As for metal oxides that form channel-forming regions of group oxide 230, a band gap of 2 eV is used. In summary, it is preferable to use a voltage of 2.5 eV or higher.

[0355] The above metal oxide preferably contains at least indium (In) or zinc (Zn). It is preferable that it contains indium (In) and zinc (Zn). In addition, it is preferable that element M is included. As element M, aluminum (Al) Gallium (Ga), yttrium (Y), tin (Sn), boron (B), titanium (Ti) ), iron (Fe), nickel (Ni), germanium (Ge), zirconium (Zr), mo Ribdenum (Mo), Lanthanum (La), Cerium (Ce), Neodymium (Nd), Hafniu Hf, tantalum (Ta), tungsten (W), magnesium (Mg), cobalt It can be one or more elements selected from (Co), etc. In particular, element M is aluminum The material must be nium (Al), gallium (Ga), yttrium (Y), or tin (Sn). It is preferable.

[0356] Furthermore, as shown in Figure 28B, the metal oxide 230b is in a region that does not overlap with the conductor 242. The film thickness may be thinner than the film thickness in the region overlapping with the conductor 242. When forming 2a and conductor 242b, a portion of the upper surface of the metal oxide 230b is removed. It is formed by the above. A conductive film that will become a conductor 242 is deposited on the upper surface of the metal oxide 230b. In such cases, a region of low resistance may be formed near the interface with the conductive film. A resistor is located between the conductor 242a and conductor 242b on the upper surface of the metal oxide 230b. By removing the low-level regions, it is possible to prevent channels from forming in those regions. Cut.

[0357] According to one aspect of the present invention, a display device having small transistors and high pixel density is provided. It can be provided. Alternatively, a display device with a transistor that has a large on-current and high brightness. It can provide a device with fast transistors and a fast display device. It can provide a transistor with stable electrical characteristics and high reliability. A display device can be provided. Alternatively, a transistor with a small off-current and low power consumption can be provided. It is possible to provide a display device with low power output.

[0358] Detailed configuration of transistor 200A that can be used in a display device according to one aspect of the present invention I will explain this.

[0359] The conductor 205 is arranged to have an overlapping region with the metal oxide 230 and the conductor 260. It is preferable that the conductor 205 be embedded in the insulator 216. Therefore, it is preferable to ensure good flatness of the upper surface of the conductor 205. For example, conductor 205 The average surface roughness (Ra) of the top surface is 1 nm or less, preferably 0.5 nm or less, more preferably 0 It should be less than 0.3 nm. This will result in the insulator 224 being formed on top of the conductor 205. The aim is to improve the flatness and enhance the crystallinity of metal oxide 230b and metal oxide 230c. It is possible.

[0360] Here, the conductor 260 functions as the first gate (also called the top gate) electrode. In some cases, the conductor 205 is used as the second gate (also called the bottom gate) electrode. In some cases, it may function as follows: In that case, the potential applied to conductor 205 is applied to conductor 260. By changing the potential independently, without linking it to the other potential, the V of the 200A transistor can be controlled. th Control It can be controlled. In particular, by applying a negative potential to the conductor 205, the transient can be controlled. V of Ta200A th By making it greater than 0V, it becomes possible to reduce the off-current. However, Therefore, applying a negative potential to conductor 205 is better than not applying a negative potential to conductor 260 The drain current can be reduced when the applied potential is 0V.

[0361] Furthermore, the conductor 205 is provided to be larger than the channel formation region in the metal oxide 230. It is desirable to do so. In particular, as shown in Figure 28C, the conductor 205 is a channel of the metal oxide 230. It is preferable that the material extends even in the region outside the end where it intersects with the width direction. On the outer side of the side surface in the channel width direction of the metal oxide 230, the conductor 205 and the conductor It is preferable that the electric element 260 is superimposed on the electric element via an insulator.

[0362] With the above configuration, the electric field of the conductor 260 which functions as the first gate electrode and The electric field of the conductor 205, which functions as a second gate electrode, causes the metal oxide 23 The channel formation region of 0 can be electrically surrounded.

[0363] Furthermore, as shown in Figure 28C, the conductor 205 is extended to function as wiring. However, this is not limited to the case where a conductor that functions as wiring is placed beneath the conductor 205. It may also be configured to include such a feature.

[0364] Furthermore, the conductor 205 is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use this. Although the conductor 205 is shown as a single layer, it may also be a laminated structure. For example, a laminate of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0365] Furthermore, beneath the conductor 205 are hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides. It has the function of suppressing the diffusion of impurities such as molecules (N2O, NO, NO2, etc.) and copper atoms (above) The impurities are less likely to permeate.) A conductor may be used. Alternatively, oxygen (for example, oxygen atoms, acid) may be used. By using a conductor that has the function of suppressing the diffusion of elementary molecules (such as) (i.e., the above oxygen does not easily permeate it). This is preferable. In this specification, the function of suppressing the diffusion of impurities or oxygen is: The function is to suppress the diffusion of one or all of the above-mentioned impurities or oxygen.

[0366] By using a conductor having the function of suppressing oxygen diffusion beneath the conductor 205, This can suppress the oxidation of the electrochemical element 205, which leads to a decrease in conductivity. It also suppresses the diffusion of oxygen. Examples of conductors having this function include tantalum, tantalum nitride, ruthenium, or acid It is preferable to use ruthenium oxide or the like. Therefore, the conductor 205 is the above-mentioned conductive The material can be in a single layer or a laminate.

[0367] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that it functions as a barrier insulating film to suppress this. Therefore, the insulator 214 , hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule (N2O, NO, N It has the function of suppressing the diffusion of impurities such as O2 and copper atoms (the above impurities do not easily permeate). ) It is preferable to use an insulating material. Or, oxygen (e.g., oxygen atoms, oxygen molecules, etc.) It is preferable to use an insulating material that has the function of suppressing the diffusion of (i.e., one that is impermeable to the above-mentioned oxygen). It seems so.

[0368] For example, aluminum oxide or silicon nitride is preferred as the insulator 214. This allows impurities such as water or hydrogen to enter the transistor from the substrate side of the insulator 214. This can suppress diffusion to the 200A side. Alternatively, oxygen contained in the insulator 224, etc. However, diffusion toward the substrate side beyond the insulator 214 can be suppressed.

[0369] Furthermore, the insulators 216, 280, and 281, which function as interlayer films, are insulators It is preferable that the dielectric constant is lower than 214. By using a material with a low dielectric constant as the interlayer film... This can reduce parasitic capacitance between wires. For example, insulator 216, insulator 28 0, and as insulator 281, silicon oxide, silicon oxide nitride, silicon oxide nitride, nitrile Silicon oxide, fluorinated silicon oxide, carbon-added silicon oxide, carbon and nitrogen Silicon oxide with added elements, or silicon oxide with voids, can be used as appropriate.

[0370] Insulators 222 and 224 function as gate insulators.

[0371] Here, the insulator 224 in contact with the metal oxide 230 is preferably one that deoxygenates upon heating. In this specification, oxygen released by heating may be referred to as excess oxygen. For example, The insulator 224 may be silicon oxide or silicon oxide nitride, etc., as appropriate. Contains oxygen. By providing an insulator in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 are eliminated. This can reduce the noise and improve the reliability of the 200A transistor.

[0372] Specifically, as the insulator 224, an oxide material is used from which some oxygen is removed by heating. Preferably, an oxide that desorbs oxygen upon heating is TDS (Thermal Deoxygenate). In sorption spectroscopy analysis, the amount of oxygen converted to oxygen atoms Desorption amount is 1.0 × 10 18 atoms / cm 3 Preferably 1.0 × 10 19 ato ms / cm 3 More preferably 2.0 × 10 19 atoms / cm3 The above, or 3 .0 × 10 20 atoms / cm 3 The above describes the oxide film. Note that during the above TDS analysis... The surface temperature of the film in this case is 100°C to 700°C, or 100°C to 400°C. The following range is preferred.

[0373] Furthermore, as shown in Figure 28C, the insulator 224 does not overlap with the insulator 254, and is metal oxide The film thickness in areas that do not overlap with material 230b may be thinner than the film thickness in other areas. Insulator 224, it does not overlap with insulator 254 and does not overlap with metal oxide 230b. The film thickness in the region is preferably such that it allows sufficient diffusion of the above-mentioned oxygen.

[0374] Insulator 222, like insulator 214, allows impurities such as water or hydrogen to penetrate from the substrate side. It is preferable that it functions as a barrier insulating film to suppress contamination of ZISTA 200A. For example, it is preferable that the insulator 222 has lower hydrogen permeability than the insulator 224. 2. The insulators 254 and 274 separate the insulator 224, the metal oxide 230, and By surrounding the insulator 250, impurities such as water or hydrogen can enter the transistor 200 from the outside. This can prevent intrusion into A.

[0375] Furthermore, the insulator 222 has the function of suppressing the diffusion of oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator has (the above oxygen does not easily permeate). For example, the insulator 222 is an insulator It is preferable that the oxygen permeability is lower than that of 224. The insulator 222 suppresses the diffusion of oxygen and impurities. By having a function that controls the diffusion of oxygen from the metal oxide 230 toward the substrate, This is preferable because it can reduce the amount of heat. Also, the conductor 205 is an insulator 224 and a metal oxide 230. This can suppress the reaction with oxygen present in it.

[0376] The insulator 222 is an oxide of either or both aluminum and hafnium, which are insulating materials. It is preferable to use an insulator containing aluminum and / or hafnium oxides. The insulator includes aluminum oxide, hafnium oxide, aluminum, and hafnium. It is preferable to use an oxide (hafnium aluminate), etc. When an insulator 222 is formed, the insulator 222 releases oxygen from the metal oxide 230 and This suppresses the ingress of impurities such as hydrogen from the peripheral area of ​​transistor 200A into the metal oxide 230. It functions as a layer.

[0377] Alternatively, these insulators may include, for example, aluminum oxide, bismuth oxide, or germanium oxide. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added. Alternatively, these insulators may be nitrided. The above insulation Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated onto the body.

[0378] Furthermore, the insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, acid Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulation containing so-called high-k materials such as O3 or (Ba,Sr)TiO3 (BST). The body may be used in a single layer or a multilayer configuration. As transistors become smaller and more integrated, Thinning of the gate insulator can sometimes lead to problems such as leakage current. By using high-k material as a functional insulator, the physical film thickness is maintained while the transient This allows for a reduction in gate potential during operation.

[0379] Furthermore, the insulators 222 and 224 may have a laminated structure of two or more layers. In this case, the laminated structure is not limited to that made of the same material, but may also be made of different materials. For example, an insulator similar to the insulator 224 may be provided below the insulator 222.

[0380] Metal oxide 230 consists of metal oxide 230a and metal oxide 230 on metal oxide 230a It has b and a metal oxide 230c on the metal oxide 230b. The presence of metal oxide 230a results in a structure formed below the metal oxide 230a. The diffusion of impurities from the material to the metal oxide 230b can be suppressed. Having a metal oxide 230c on material 230b, the shape above the metal oxide 230c The diffusion of impurities from the constructed structure to the metal oxide 230b can be suppressed.

[0381] Furthermore, metal oxide 230 has a layered structure of multiple oxide layers with different atomic ratios of each metal atom. It is preferable that the metal oxide 230 contains at least indium (In) and When element M is included, the total number of atoms of the elements constituting the metal oxide 230a is the same as that of the metal The proportion of atoms of element M contained in oxide 230a is the total number of elements that make up metal oxide 230b. The ratio of the number of element M atoms in metal oxide 230b to the number of elemental atoms is higher than the ratio of elemental atoms in metal oxide 230b. This is preferable. Also, the atomic ratio of element M contained in the metal oxide 230a to In is It is preferable that the atomic ratio of element M in metal oxide 230b is greater than that of In. Here, metal oxide 230c is used in metal oxide 230a or metal oxide 230b. A metal oxide that can be used can be used.

[0382] Furthermore, the energy at the lower end of the conduction band of metal oxide 230a and metal oxide 230c is that of the metal acid It is preferable that the energy is higher than the energy at the lower end of the conduction band of ion 230b. In other words, The electron affinity of metal oxide 230a and metal oxide 230c is such that It is preferable that it is smaller than the electron affinity. In this case, metal oxide 230c is metal oxide 2 It is preferable to use a metal oxide that can be used in 30a. Specifically, metal oxide The number of atoms of element M contained in metal oxide 230c relative to the total number of atoms of all elements that make up substance 230c. The ratio of the number of atoms is the ratio of the total number of atoms of the elements that make up metal oxide 230b to the number of atoms of metal oxide 230b. It is preferable that the proportion of element M atoms in 30b is higher than that. Also, metal oxide 23 The atomic ratio of element M contained in 0c to In is the same as the element contained in metal oxide 230b. It is preferable that the atomic ratio of M to In is greater than that of In.

[0383] Here, at the joint of metal oxide 230a, metal oxide 230b, and metal oxide 230c In this case, the energy level at the lower end of the conduction band changes smoothly. In other words, metal oxide 2 The lower end of the conduction band at the junction of 30a, metal oxide 230b, and metal oxide 230c Energy levels can also be described as continuously changing or continuously joining. For this purpose, the interface between metal oxide 230a and metal oxide 230b, and metal oxide 230b By lowering the defect level density of the mixed layer formed at the interface between the metal oxide 230c and the metal oxide 230c, stomach.

[0384] Specifically, metal oxide 230a and metal oxide 230b, and metal oxide 230b and metal oxide The defect level density of substance 230c is due to the presence of a common element other than oxygen (which is the main component). A mixed layer with low saturation can be formed. For example, if metal oxide 230b is In-Ga-Zn In the case of oxides, metal oxide 230a and metal oxide 230c are given as In-Ga-Zn acid Metal oxides, Ga-Zn oxides, gallium oxide, etc. may also be used. A layered structure may also be used. For example, an In-Ga-Zn oxide and the In-Ga-Zn oxide A layered structure with Ga-Zn oxide on a material, or In-Ga-Zn oxide and the In-Ga -A layered structure with gallium oxide on Zn oxide can be used. In other words, In- A layered structure of Ga-Zn oxide and an in-free oxide is defined as metal oxide 230c. You may use it.

[0385] Specifically, as metal oxide 230a, In:Ga:Zn = 1:3:4 [atomic ratio], Alternatively, a metal oxide in an atomic ratio of 1:1:0.5 may be used. Also, metal oxide 230 Let b be In:Ga:Zn = 4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] A metal oxide can be used. Also, as metal oxide 230c, In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 You may use metal oxides with an atomic ratio of [number of atoms], or Ga:Zn=2:5 [number of atoms]. A specific example of a layered structure using metal oxide 230c is In:Ga:Zn=4: Layered structures of 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio], In:Ga:Z Layered structure of n=4:2:3 [atomic ratio] and Ga:Zn=2:5 [atomic ratio], In: Examples include a layered structure with Ga:Zn=4:2:3 [atomic ratio] and gallium oxide.

[0386] In this case, the main carrier pathway is metal oxide 230b. Metal oxide 230a, gold By configuring the metal oxide 230c as described above, metal oxide 230a and metal oxide 230b Defect level density at the interface with and at the interface between metal oxide 230b and metal oxide 230c This can be made lower. Therefore, the influence of interfacial scattering on carrier conduction becomes smaller. The 200A transistor can achieve high on-current and high frequency characteristics. When the metal oxide 230c is made into a layered structure, the above-mentioned metal oxide 230b and the metal oxide In addition to the effect of lowering the defect level density at the interface with 230c, the metal oxide 230c has It is expected that this will suppress the diffusion of the constituent elements towards the insulator 250. In this structure, metal oxide 230c is used in a layered structure, with an In-free oxide positioned above the layered structure. Therefore, it is possible to suppress In that could diffuse towards the insulator 250. Insulator 250 Because it acts as a gate insulator, if In diffuses, it causes a characteristic defect in the transistor. Therefore, by using a layered structure for the metal oxide 230c, a highly reliable display device can be created. This will make it possible to provide this service.

[0387] On the metal oxide 230b, there is a conductor 242 that functions as a source electrode and a drain electrode. (Conductors 242a and 242b) are provided. The conductor 242 is aluminum nium, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tung Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, be Selected from lylium, indium, ruthenium, iridium, strontium, and lanthanum. A metal element, or an alloy containing the above-mentioned metal elements, or a combination of the above-mentioned metal elements It is preferable to use alloys such as tantalum nitride, titanium nitride, and tungsten. Titanium and aluminum nitrides, tantalum and aluminum nitrides, ruthenium oxide Um, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing [the specified substance]. Also, tantalum nitride, titanium nitride, titanium and [the specified substance] Nitrides containing luminium, nitrides containing tantalum and aluminum, ruthenium oxide, nitrides Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel. The material is a conductive material that is resistant to oxidation, or a material that maintains its conductivity even when it absorbs oxygen. That's good.

[0388] By providing the conductor 242 in contact with the metal oxide 230, the metal oxide 230 In the vicinity of the conductor 242, the oxygen concentration may decrease. Also, the metal oxide 230 Near the conductor 242, the metal contained in the conductor 242 and the components of the metal oxide 230 A metal compound layer containing may be formed. In such cases, the conductivity of the metal oxide 230 In the region near body 242, the carrier density increases, and this region becomes a low-resistance region.

[0389] Here, the region between the conductor 242a and the conductor 242b is superimposed on the opening of the insulator 280. This is formed. This causes the conductor 260 to self-regulate between the conductor 242a and the conductor 242b. They can be arranged harmoniously.

[0390] Insulator 250 functions as a gate insulator. Insulator 250 is made of metal oxide 230c It is preferable to place it in contact with the upper surface. The insulator 250 is silicon oxide, silicon oxide nitride silicon nitride oxide, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon Using silicon oxide, silicon oxide with added carbon and nitrogen, and porous silicon oxide This is possible. In particular, silicon oxide and silicon oxide-nitride are stable to heat. preferable.

[0391] Similar to the insulator 224, the concentration of impurities such as water or hydrogen in the insulator 250 is It is preferable that the amount is reduced. The film thickness of the insulator 250 shall be between 1 nm and 20 nm. It is preferable to do so.

[0392] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable to suppress oxygen diffusion from the insulator 250 to the conductor 260. This makes it possible to suppress the oxidation of the conductor 260 by oxygen in the insulator 250.

[0393] Furthermore, the metal oxide may function as part of the gate insulator. When silicon oxide or silicon oxide nitride is used for the insulator 250, the metal oxide It is preferable to use a metal oxide, which is a high-k material with a high dielectric constant. By making the insulator a laminated structure of insulator 250 and the metal oxide, it becomes stable against heat. Furthermore, a laminated structure with a high dielectric constant can be achieved. Therefore, the physical thickness of the gate insulator can be achieved. While maintaining this property, it becomes possible to reduce the gate potential applied during transistor operation. This makes it possible to thin the equivalent oxide film thickness (EOT) of the insulator that functions as a gate insulator.

[0394] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, tan Choose from gusten, titanium, tantalum, nickel, germanium, or magnesium, etc. One or more metal oxides containing these types can be used. In particular, aluminum Aluminum oxide, acid Hafnium oxide, aluminum, and hafnium-containing oxides (hafnium aluminate), etc. It is preferable to use [this].

[0395] Although the conductor 260 is shown as a two-layer structure in Figure 28, it may also be a single-layer structure or a three-layer structure or more. The above layered structure is also acceptable.

[0396] Conductor 260a contains the above-mentioned hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides. This conductive material has the function of suppressing the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an electrolytic device. Alternatively, the diffusion of oxygen (e.g., oxygen atoms, oxygen molecules, etc.) can be suppressed. It is preferable to use a conductive material that has a controlling function.

[0397] Furthermore, because the conductor 260a has the function of suppressing oxygen diffusion, the insulator 250 contains The presence of oxygen can suppress the oxidation of the conductor 260b, which would otherwise reduce its conductivity. It is possible. Conductive materials that have the function of suppressing oxygen diffusion include, for example, tantalum, nitride. It is preferable to use tantalum, ruthenium, or ruthenium oxide.

[0398] Furthermore, the conductor 260b is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductive material 260 also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material can be used as the main component. In addition, the conductor 260b has a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may also be used.

[0399] Furthermore, as shown in Figures 28A and 28C, if the metal oxide 230b overlaps with the conductor 242 In the region where there is no metal oxide, in other words, in the channel formation region of metal oxide 230, The sides of 30 are arranged to be covered with the conductor 260. This allows the first gate electrode The electric field of the conductor 260, which functions as such, can be easily applied to the side surface of the metal oxide 230. Therefore, by increasing the on-current of the 200A transistor, the frequency characteristics can be improved. It is possible.

[0400] Insulator 254, like insulator 214, etc., can contain impurities such as water or hydrogen from the insulator 280 side. It is preferable that it functions as a barrier insulating film to suppress contamination of transistor 200A. For example, it is preferable that the insulator 254 has lower hydrogen permeability than the insulator 224. Furthermore, as shown in Figures 28B and 28C, the insulator 254 is on the side of the metal oxide 230c , the top and side surfaces of conductor 242a, the top and side surfaces of conductor 242b, metal oxide 230a and It is preferable that the metal oxide 230b is in contact with the side surface and the insulator 224. By using this configuration, the hydrogen contained in the insulator 280 is absorbed by the conductor 242a and conductor 242 b, metal oxide 230a, metal oxide 230b and metal oxide 224 from the top or side surface This can suppress penetration into oxide 230.

[0401] Furthermore, the insulator 254 has the function of suppressing the diffusion of oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator has (the above oxygen does not easily permeate). For example, the insulator 254 is an insulator It is preferable that the oxygen permeability is lower than that of 280 or insulator 224.

[0402] The insulator 254 is preferably formed using a sputtering method. By depositing a film using the sputtering method in an oxygen-containing atmosphere, the insulator 224 Oxygen can be added near the region in contact with 254. This allows the oxygen to escape from that region. Oxygen can be supplied into the metal oxide 230 via the edge 224. Here, an insulator 254 has the function of suppressing the upward diffusion of oxygen, so that oxygen is contained within the metal oxide 230 This prevents diffusion from the insulator 280. Also, the insulator 222 prevents diffusion downwards. By having a function to suppress oxygen diffusion, oxygen diffuses from the metal oxide 230 to the substrate side. This prevents acid from forming in the channel-forming region of the metal oxide 230. The element is supplied. This reduces the oxygen vacancy in the metal oxide 230, and the transistor - It can suppress the transformation into Marion.

[0403] As the insulator 254, for example, an oxide of one or both of aluminum and hafnium is used. It is preferable to form a film containing an insulator. Note that the oxidation of one or both aluminum and hafnium As insulators containing materials, aluminum oxide, hafnium oxide, aluminum and hafnium It is preferable to use an oxide containing um (such as hafnium aluminate).

[0404] The insulator 254, which has barrier properties against hydrogen, provides a barrier to insulators 224 and 250, and By being covered by the metal oxide 230, the insulator 280 is covered by the insulator 254, and the insulator 22 4. It is separated from the metal oxide 230 and the insulator 250. This allows the transistor to function. Because it can suppress the intrusion of impurities such as hydrogen from the outside of 200A, transistor 20 It can provide good electrical characteristics and reliability to 0A.

[0405] The insulator 280 is connected to the insulator 224, the metal oxide 230, and the conductor via the insulator 254. It is provided on 242. For example, as the insulator 280, silicon oxide, silicon oxide nitride , nitride silicon oxide, fluorine-added silicon oxide, carbon-added silicon oxide, carbon It is preferable to have silicon oxide with added elements and nitrogen, or silicon oxide with voids, etc. In particular, silicon oxide and silicon oxide-nitride are preferred because they are thermally stable. In particular, materials such as silicon oxide, silicon oxide-nitride, and silicon oxide with voids are subject to heating. This is preferable because it allows for the easy formation of regions containing more desorbed oxygen.

[0406] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The upper surface of the edge 280 may be flattened.

[0407] Insulator 274, like insulator 214, etc., is susceptible to impurities such as water or hydrogen from above. It is preferable that it functions as a barrier insulating film to suppress mixing with 80. Insulator 274 For example, an insulator that can be used for insulator 214, insulator 254, etc. can be used. Yes.

[0408] Furthermore, it is preferable to provide an insulator 281 that functions as an interlayer film on top of the insulator 274. The insulator 281, like the insulator 224, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that it is.

[0409] Furthermore, openings formed in insulators 281, 274, 280, and 254 Conductors 240a and 240b are placed there. These are provided opposite each other with the conductor 260 in between. Note that the conductors 240a and 240b The height of the top surface may be on the same plane as the top surface of the insulator 281.

[0410] Furthermore, the insulators 281, 274, 280, and 254 are in contact with the inner wall of the opening. Then, an insulator 241a is provided, and the first conductor of the conductor 240a is in contact with its side surface. It is made. A conductor 242a is located in at least a portion of the bottom of the opening, The electric element 240a is in contact with the conductor 242a. Similarly, the insulator 281, insulator 274, and insulator Insulator 241b is provided in contact with the inner wall of the opening of insulator 254, and its side The first conductive material of the conductive material 240b is formed in contact with the opening. A conductor 242b is located in a portion of the material, and conductor 240b is in contact with conductor 242b.

[0411] Conductors 240a and 240b are mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material. Furthermore, conductors 240a and 240b are multiplied A layered structure is also acceptable.

[0412] Furthermore, when the conductor 240 has a layered structure, metal oxide 230a, metal oxide 230b, Conductive material in contact with conductor 242, insulator 254, insulator 280, insulator 274, and insulator 281 The body uses a conductor that has the function of suppressing the diffusion of impurities such as water or hydrogen, as described above. This is preferable. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. Furthermore, the diffusion of impurities such as water or hydrogen is suppressed. A conductive material having the function of being used may be used in a single layer or a laminate. As a result, the oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. This prevents impurities such as water or hydrogen from entering from above the insulator 281. To suppress the mixing of the electrolytic material 240a and the conductor 240b into the metal oxide 230. It is possible.

[0413] Insulators 241a and 241b can be used, for example, as insulator 254, etc. Any suitable insulator should be used. Insulators 241a and 241b are in contact with insulator 254. Because it is provided in such a way, impurities such as water or hydrogen can be released from the insulator 280, etc., into the conductor 240a and the conductor It is possible to suppress the mixing of the electrolytic material 240b into the metal oxide 230. To prevent the oxygen contained in the edge 280 from being absorbed by the conductors 240a and 240b. It is possible.

[0414] Also, although not shown in the diagram, wiring is in contact with the upper surface of the conductor 240a and the upper surface of the conductor 240b. Conductors that function as wiring may be placed. Conductors that function as wiring include tungsten, copper It is preferable to use a conductive material, or a conductive material mainly composed of aluminum. The body may also have a laminated structure, for example, a laminate of titanium or titanium nitride and the conductive material. This may also be done. The conductor may be formed to be embedded in an opening provided in the insulator. .

[0415] <Example of transistor configuration 2> Figures 29A, 29B, and 29C can be used in a display device according to one aspect of the present invention. These are a top view and a cross-sectional view of transistor 200B and the area surrounding transistor 200B. Transistor 200B is a modified version of transistor 200A.

[0416] Figure 29A is a top view of transistor 200B. Figures 29B and 29C are also shown. This is a cross-sectional view of transistor 200B. Here, Figure 29B is a cross-sectional view of the same transistor as in Figure 29A, with the line B1-B2 This is a cross-sectional view of the area indicated by the dashed line, and is also a cross-sectional view of transistor 200B in the channel length direction. Yes. Also, Figure 29C is a cross-sectional view of the area shown by the dashed line B3-B4 in Figure 29A. This is also a cross-sectional view of transistor 200B in the channel width direction. Note that in Figure 29A, the top view is shown. Some elements have been omitted from the diagram for clarity.

[0417] In transistor 200B, conductors 242a and 242b are made of metal oxide 230c It has a region that overlaps with the insulator 250 and the conductor 260. This allows transistor 2 00B can be a transistor with a high on-current. Also, transistor 200B This can be made into an easily controllable transistor.

[0418] The conductor 260, which functions as a gate electrode, consists of a conductor 260a and a conductive material on the conductor 260a. The conductor 260a has body 260b and, conductor 260a has hydrogen atoms, hydrogen molecules, water molecules, copper atoms, etc. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities. Alternatively, oxygen ( For example, using a conductive material that has the function of suppressing the diffusion of oxygen atoms, oxygen molecules, etc. It is preferable.

[0419] The conductor 260a has the function of suppressing oxygen diffusion, thus the material of conductor 260b Selectivity can be improved. In other words, by having the conductor 260a, the conductor 260 The oxidation of b is suppressed, preventing a decrease in conductivity.

[0420] Furthermore, the top and side surfaces of the conductor 260, the side surfaces of the insulator 250, and the side surfaces of the metal oxide 230c It is preferable to provide an insulator 254 so as to cover the surface. Note that the insulator 254 is water or water It is preferable to use an insulating material that has the function of suppressing the diffusion of impurities such as elements and oxygen.

[0421] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By having body 254, impurities such as water and hydrogen in the insulator 280 are absorbed into the transistor 20 This can suppress diffusion to 0B.

[0422] <Transistor Configuration Example 3> Figures 30A, 30B, and 30C can be used in a display device according to one embodiment of the present invention. These are a top view and a cross-sectional view of transistor 200C and the area surrounding transistor 200C. Transistor 200C is a modified version of transistor 200A.

[0423] Figure 30A is a top view of transistor 200C. Figures 30B and 30C are also shown. This is a cross-sectional view of transistor 200C. Here, Figure 30B is a cross-sectional view of C1-C2 in Figure 30A. This is a cross-sectional view of the area indicated by the dashed line, and is also a cross-sectional view of transistor 200C in the channel length direction. Yes. Also, Figure 30C is a cross-sectional view of the area shown by the dashed line C3-C4 in Figure 30A. This is also a cross-sectional view of transistor 200C in the channel width direction. Note that in the top view of Figure 30A... Some elements have been omitted from the diagram for clarity.

[0424] In transistor 200C, an insulator 250 is present on the metal oxide 230c, and the insulator 250 It has a metal oxide 252 on top. It also has a conductor 260 on top of the metal oxide 252, and is conductive The body 260 has an insulator 270 on it. Furthermore, the insulator 271 is located on the insulator 270.

[0425] The metal oxide 252 preferably has the function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses oxygen diffusion between the conductor 260 and the conductor, The diffusion of oxygen to 260 is suppressed. In other words, the amount of oxygen supplied to the metal oxide 230 decreases. This can suppress the oxidation of the conductor 260 by oxygen. .

[0426] Furthermore, the metal oxide 252 may also function as part of the gate electrode. For example, gold An oxide semiconductor that can be used as the gen oxide 230 is used as the metal oxide 252. This is possible. In that case, by depositing the conductor 260 using the sputtering method, the metal acid The electrical resistance of oxide 252 can be reduced to make it a conductor. This is called OC(Oxid It can be called an e-conductor electrode.

[0427] Furthermore, metal oxide 252 may function as part of the gate insulator. Therefore, when silicon oxide or silicon oxide nitride is used for the insulator 250, metal oxide 2 For 52, it is preferable to use a metal oxide, which is a high-k material with a high dielectric constant. By adopting this laminated structure, it is possible to create a laminated structure that is stable against heat and has a high dielectric constant. Therefore, the gate potential applied during transistor operation can be maintained while preserving the physical film thickness. This makes it possible to reduce the equivalent oxide film thickness (EO) of the insulating layer that functions as a gate insulator. This makes it possible to thin the film of T).

[0428] In transistor 200C, metal oxide 252 is shown as a single layer, but a stacked structure of two or more layers is also shown. It may also be constructed as follows: For example, a metal oxide that functions as part of the gate electrode and a gate insulator A metal oxide that functions as part of the structure may be layered and provided.

[0429] If the metal oxide 252 is present and it functions as a gate electrode, then the conductor 260 This allows for an improvement in the on-current of transistor 200C without weakening the effect of the electric field. It can be done. Or, if it functions as a gate insulator, the insulator 250 and the metal oxide 252 The physical thickness maintains the distance between the conductor 260 and the metal oxide 230, The leakage current between the electrolytic body 260 and the metal oxide 230 can be suppressed. By providing a laminated structure of insulator 250 and metal oxide 252, the conductor 260 and metal oxide The physical distance between the metal oxide 230 and the conductor 260, and the electric field acting on the metal oxide 230 from the conductor 260. The strength can be easily adjusted.

[0430] Specifically, as metal oxide 252, an oxide semiconductor that can be used in metal oxide 230 A conductor with reduced resistance can be used. Alternatively, hafnium, aluminum, or gallium can be used. Umium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, gel A metal oxide containing one or more metals selected from manium, magnesium, etc. It can be used.

[0431] In particular, an insulating layer containing an oxide of aluminum or hafnium, or both. Aluminum, hafnium oxide, and oxides containing aluminum and hafnium (hafnium It is preferable to use aluminate, etc. In particular, hafnium aluminate is hafnium oxide. It has higher heat resistance than nium. Therefore, it is less likely to crystallize during subsequent heat treatment processes. Therefore, it is preferable. Note that metal oxide 252 is not an essential component. Desired transistor characteristics The design should be adjusted according to the specific requirements.

[0432] The insulator 270 has the function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. It is preferable to use materials such as aluminum oxide or hafnium oxide. This prevents the conductor 260 from being oxidized by oxygen from above the insulator 270. It can be suppressed. Also, impurities such as water or hydrogen coming from above the insulator 270 can be suppressed. The conductor 260 and the insulator 250 suppress the mixing of the material into the metal oxide 230. It is possible.

[0433] The insulator 271 functions as a hard mask. By providing the insulator 271, the conductor 26 During processing of 0, the side surface of the conductor 260 is approximately perpendicular, specifically, the side surface of the conductor 260 and the substrate. The angle formed by the surfaces shall be between 75 degrees and 100 degrees, preferably between 80 degrees and 95 degrees. It is possible.

[0434] Furthermore, the insulator 271 has the function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, it may also function as a barrier layer. In that case, insulation Body 270 does not need to be included.

[0435] Using insulator 271 as a hard mask, insulator 270, conductor 260, metal oxide 2 52, by selectively removing a portion of the insulator 250 and metal oxide 230c, these The sides can be made to roughly coincide, and a portion of the metal oxide 230b surface can be exposed. .

[0436] Furthermore, transistor 200C has a region 243a on a portion of the exposed metal oxide 230b surface. and region 243b. Either region 243a or region 243b is used as the source region. The other of region 243a or region 243b functions as a drain region.

[0437] The formation of regions 243a and 243b is, for example, by ion implantation, ion doping, By using plasma immersion ion implantation or plasma treatment, exposed metal oxides This can be achieved by introducing impurity elements such as phosphorus or boron to the 230b surface. In the context of application methods, "impurity elements" refer to elements other than the principal component elements.

[0438] Furthermore, a metal film is formed after a portion of the surface of the metal oxide 230b is exposed, followed by heat treatment. By doing so, the elements contained in the metal film are diffused into the metal oxide 230b and region 243 It is also possible to form regions a and 243b.

[0439] In the region where impurity elements of metal oxide 230b are introduced, the electrical resistivity decreases. Regions 243a and 243b are sometimes referred to as the "impurity region" or "low resistance region." .

[0440] By using the insulator 271 and / or the conductor 260 as a mask, region 243a and region Region 243b can be formed in a self-aligned manner. Therefore, region To prevent the overlap between region 243a and / or region 243b and the conductor 260, thereby reducing parasitic capacitance. This is possible. Also, the channel formation region and the source-drain region (region 243a or region 243a) b) No offset region is formed between them. Regions 243a and 243b are self-aligned. By forming it in a self-aligned manner, the on-current increases, the threshold voltage decreases, This enables improvements such as increased operating frequency.

[0441] Transistor 200C consists of insulator 271, insulator 270, conductor 260, and metal oxide 25 2. The insulator 250 and the metal oxide 230c have an insulator 272 on their sides. 2 is preferably an insulator with a low dielectric constant. For example, silicon oxide, silicon oxide nitride, Silicon nitride, silicon nitride, silicon oxide with added fluorine, and carbon Silicon oxide, silicon oxide with added carbon and nitrogen, porous silicon oxide, Alternatively, it is preferable that it be a resin or the like. In particular, silicon oxide, silicon oxide nitride, silicon oxide nitride If silicon oxide having voids is used as the insulator 272, in a later process the insulator 272 It is preferable because it allows for the easy formation of an excess oxygen region within it. Also, silicon oxide and silicon oxide nitride Recon is preferred because it is thermally stable. In addition, the insulator 272 has the function of diffusing oxygen. It is preferable that it has

[0442] Furthermore, in order to further reduce the off-current, off-current is controlled between the channel formation region and the source-drain region. A set region may be provided. The offset region is a region with high electrical resistivity, as mentioned above. This is a region where no impurity elements are introduced. The formation of the offset region occurs in insulator 272 This can be achieved by introducing the aforementioned impurity elements after the formation of the insulator 272 It also functions as a mask, similar to insulator 271, etc. Therefore, the insulator of metal oxide 230b No impurity elements are introduced in the region overlapping with 272, and the electrical resistivity in that region remains high. It is possible.

[0443] Furthermore, transistor 200C has an insulator 272 and an insulator 254 on a metal oxide 230. The insulator 254 is preferably deposited using the sputtering method. By using the densification method, it is possible to form an insulating film with fewer impurities such as water or hydrogen. ru.

[0444] Note that oxide films produced by sputtering may extract hydrogen from the structure to which the film is deposited. Therefore, the insulator 254 absorbs hydrogen and water from the metal oxide 230 and the insulator 272. This makes it possible to reduce the hydrogen concentration of the metal oxide 230 and the insulator 272.

[0445] <Materials used in transistors> This section describes the constituent materials that can be used in transistors.

[0446] <<Substrate>> Examples of substrates for forming transistors include insulating substrates, semiconductor substrates, or conductive substrates. A plate can be used. Examples of insulating substrates include glass substrates, quartz substrates, and sapphire substrates. These include plates, stabilized zirconia substrates (such as yttria-stabilized zirconia substrates), and resin substrates. Furthermore, as semiconductor substrates, for example, semiconductor substrates such as silicon and germanium, or carbonized Silicon, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, gallium oxide Examples include compound semiconductor substrates made of lium. Furthermore, insulating regions exist within the aforementioned semiconductor substrates. Semiconductor substrates having a region, for example, SOI (Silicon On Insulator) There are substrates, etc. Conductive substrates include graphite substrates, metal substrates, alloy substrates, conductive resin substrates, etc. There are also substrates containing metallic nitrides, substrates containing metallic oxides, etc. This refers to a substrate in which a conductor or semiconductor is provided on an insulating substrate, and a semiconductor substrate in which a conductor or insulator is provided. There are substrates with semiconductors or insulators provided on them, conductive substrates, etc. A substrate on which elements are provided may also be used. The elements provided on the substrate may include capacitance Examples include elements, resistive elements, switch elements, light-emitting elements, memory elements, etc.

[0447] <<Insulator>> Insulators include insulating oxides, nitrides, oxidized nitrides, nitride oxides, and metal oxides. Examples include metal oxides and nitrides, and metal nitride oxides.

[0448] For example, as transistors become smaller and more integrated, the gate insulator can be made thinner, Problems such as leakage current may occur. The insulator that functions as a gate insulator has high By using HK material, it is possible to lower the voltage during transistor operation while maintaining the physical film thickness. This is the result. On the other hand, for the insulator that functions as an interlayer film, by using a material with a low dielectric constant, Parasitic capacitance between wires can be reduced. Therefore, depending on the function of the insulator, It's a good idea to choose the materials carefully.

[0449] Furthermore, insulators with high dielectric constants include gallium oxide, hafnium oxide, and zirconium oxide. Aluminium, an oxide having aluminum and hafnium, an oxide having aluminum and hafnium Oxiditrides, oxides having silicon and hafnium, silicon and hafnium Examples include oxide nitrides, or nitrides containing silicon and hafnium.

[0450] Furthermore, insulators with low dielectric constants include silicon oxide, silicon oxide nitride, and silicon oxide nitride. Cone, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon Examples include silicon oxide with added elements and nitrogen, silicon oxide with voids, or resins.

[0451] Furthermore, transistors using oxide semiconductors suppress the permeation of impurities such as hydrogen and oxygen. Functional insulators (insulators 214, 222, 254, and 274, etc.) By enclosing it in ), the electrical characteristics of the transistor can be stabilized. Examples of insulators that have the function of suppressing the permeation of pure substances and oxygen include boron, carbon, and nitrogen. Element, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gas Rium, germanium, yttrium, zirconium, lanthanum, neodymium, hafnium Alternatively, an insulator containing tantalum may be used in a single layer or in a multilayer configuration. Specifically, hydrogen, etc. As an insulator that has the function of suppressing the permeation of impurities and oxygen, aluminum oxide, oxide Magnesium, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide Metal oxides such as lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide, nitrogen Aluminum oxide, titanium aluminum nitride, titanium nitride, silicon nitride or silicon nitride Metal nitrides such as CON can be used.

[0452] Furthermore, the insulator that functions as a gate insulator has a region containing oxygen that is released by heating. It is preferable that the insulator is such that it has an acid region containing oxygen that is desorbed by heating. By creating a structure in which silicon oxide or silicon oxidnitride is in contact with metal oxide 230, the metal acid This can compensate for the oxygen deficiency present in compound 230.

[0453] <<Conductive material>> Examples of conductive materials include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and titanium. Molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium Indium, zirconium, beryllium, indium, ruthenium, iridium, strontium A metallic element selected from lanthanum, etc., or an alloy containing the aforementioned metallic elements, or the above It is preferable to use an alloy or the like that, which is a combination of the metal elements. For example, tantalum nitride, nitriding Titanium oxides, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing ruthenium oxide, ruthenium nitride, strontium and ruthenium-containing acids It is preferable to use oxides containing lanthanum and nickel, or similar compounds. Tantalum nitride is also preferable. Titanium nitride, titanium and aluminum nitrides, tantalum and aluminum nitrides substances, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, ran Oxides containing tungsten and nickel are conductive materials that are resistant to oxidation, or that remain conductive even after absorbing oxygen. It is preferable because it is a material that maintains its properties. Furthermore, it is a polycrystalline material containing impurity elements such as phosphorus. Semiconductors with high electrical conductivity, such as silicon, and silicides such as nickel silicide. You may use it.

[0454] Furthermore, multiple conductive materials formed from the above materials may be stacked and used. For example, the aforementioned gold A laminated structure may be formed by combining a material containing a group element with a conductive material containing oxygen. Furthermore, a laminated structure combining the aforementioned metal element-containing material and a nitrogen-containing conductive material. It may also be constructed as follows: a material containing the aforementioned metal element, a conductive material containing oxygen, and nitrogen A laminated structure may be formed by combining a conductive material containing with .

[0455] Furthermore, when a metal oxide is used in the channel formation region of a transistor, The conductor that functions as such includes a material containing the aforementioned metal element and a conductive material containing oxygen, It is preferable to use a laminated structure that combines these. In this case, an oxygen-containing conductive material is used. It is preferable to provide it on the channel formation region side. Provide an oxygen-containing conductive material on the channel formation region side. This makes it easier for oxygen released from the conductive material to be supplied to the channel-forming region.

[0456] In particular, as a conductor that functions as a gate electrode, it is contained in the metal oxide in which the channel is formed. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing nitrogen may be used. For example, titanium nitride, tantalum nitride, etc. Conductive materials containing elements may also be used. In addition, materials containing indium tin oxide and tungsten oxide may be used. Indium oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, silicic acid Indium tin oxide with added nitrogen may also be used. Zinc oxide may also be used. By using such a material, channels are formed in the gold. It may be possible to capture hydrogen contained in the group oxide. Alternatively, from the outer insulator, etc. In some cases, it is possible to capture the hydrogen that is mixed in.

[0457] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., are at least partially accurate. This can be implemented in combination with other configuration examples or drawings as appropriate.

[0458] This embodiment can be appropriately combined with other embodiments described herein, at least in part. They can be implemented together.

[0459] (Embodiment 3) In this embodiment, the OS transistor described in the above embodiment can be used. This section will explain metal oxides (hereinafter also referred to as oxide semiconductors).

[0460] <Classification of crystal structures> First, we will explain the classification of crystal structures in oxide semiconductors using Figure 31A. Figure 31A shows an oxide semiconductor, typically IGZO (a metal containing In, Ga, and Zn). This is a diagram illustrating the classification of the crystal structure of oxides.

[0461] As shown in Figure 31A, oxide semiconductors can be broadly classified into "Amorphous" It is divided into "Crystalline (crystalline)" and "Crystal (crystal)". They are classified as such. Also, among "Amorphous," there are completely amorp It includes hous. Also, within "Crystalline" there is CAAC(c-ax is-aligned crystalline), nc(nanocrystalli This includes ne), and CAC (cloud-aligned composite). Note that the classification of "Crystalline" includes single crystal, pol Y crystals and completely amorphous crystals are excluded. "Crystal" includes single crystal and poly cry It includes "stal".

[0462] The structures within the thick frame shown in Figure 31A are "Amorphous" and "Cry It is an intermediate state between "stal (crystal)" and a new boundary region (New crystal This structure belongs to the line phase. In other words, this structure is energetically in It is completely different from the stable "Amorphous" or "Crystal" forms. This can be rephrased as a structure.

[0463] The crystal structure of the film or substrate is determined by X-ray diffraction (XRD). n) It can be evaluated using a spectrum. Here, "Crystalline" GIXD (Grazing-Incidence X) of CAAC-IGZO membranes that are classified The XRD spectrum obtained by the RD measurement is shown in Figure 31B. Note that the GIXD method is a thin-film method. It is also called the Seemann-Bohlin method. Hereafter, the results obtained by GIXD measurement shown in Figure 31B The obtained XRD spectrum will simply be referred to as the XRD spectrum. Note that the CAA shown in Figure 31B The composition of the C-IGZO film is approximately In:Ga:Zn = 4:2:3 [atomic ratio]. The thickness of the CAAC-IGZO film shown in Figure 31B is 500 nm.

[0464] As shown in Figure 31B, the XRD spectrum of the CAAC-IGZO film clearly shows crystallinity. The peak shown is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film, A peak indicating c-axis orientation is detected near 2θ = 31°. Furthermore, as shown in Figure 31B... The peaks near 2θ = 31° are asymmetrical with respect to the angle at which the peak intensity was detected.

[0465] Furthermore, the crystal structure of the film or substrate is determined by nano-beam electron diffraction (NBED). Diffraction pattern observed by lectron diffraction (microelectron Also called a linear diffraction pattern. It can be evaluated by ( ). Diffraction pattern of CAAC-IGZO film The turn is shown in Figure 31C. Figure 31C shows an NBED with the electron beam incident parallel to the substrate. This is the diffraction pattern observed by the CAAC-IGZO film shown in Figure 31C. The composition is approximately In:Ga:Zn=4:2:3 [atomic ratio]. Furthermore, micro-electron diffraction was performed. In this method, electron diffraction is performed with a probe diameter of 1 nm.

[0466] As shown in Figure 31C, the diffraction pattern of the CAAC-IGZO film shows multiple c-axis orientations. Spots of this nature are observed.

[0467] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those shown in Figure 31A when considering their crystal structure. Yes, there are. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into two parts. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS. And there is nc-OS. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-non-crystalline oxide semiconductors. crystalline oxide semiconductor (a-like OS: amorphous-like oxide) This includes semiconductors, amorphous oxide semiconductors, etc.

[0468] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Give an explanation.

[0469] [CAAC-OS] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions are arranged with their c-axis in a specific direction. It is an oxide semiconductor that is oriented in a particular direction. Note that the specific direction refers to the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed, or the direction normal to the surface of the CAAC-OS film. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. If considered as a series, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS It has a region in the ab-plane direction where multiple crystal regions are connected, and this region is strained. This can occur. Note that strain refers to the misalignment of the lattice arrangement in a region where multiple crystal regions are connected. The region where the orientation of the grid arrangement changes between the aligned region and another region with a different grid arrangement. It points to. In other words, CAAC-OS is c-axis oriented and clearly oriented in the ab-plane direction. It is an oxide semiconductor.

[0470] Each of the above multiple crystalline regions consists of one or more minute crystals (with a maximum diameter of 10 nm). It is composed of crystals that are less than 100. If the crystalline region is composed of one minute crystal, The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous minute crystals. In such cases, the size of the crystalline region may be around several tens of nanometers.

[0471] In addition, In-M-Zn oxide (where M is aluminum, gallium, yttrium, and tin) In a selection of one or more types from titanium, etc., CAAC-OS is indium ( A layer containing In and oxygen (hereinafter referred to as the In layer), and a layer containing element M, zinc (Zn), and oxygen. A layered crystalline structure (also called a layered structure) is formed by stacking layers (hereinafter referred to as (M,Zn) layers). It tends to have. Furthermore, indium and element M are mutually substitutable. Therefore, (M The Zn layer may contain indium. Also, the In layer may contain element M. There is a combination. Furthermore, the In layer may also contain Zn. This layered structure is, for example, high-millimeter In resolving TEM images, it is observed as a grid pattern.

[0472] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, the θ / 2θ skid is observed. Out-of-plane XRD measurements using a champ showed a peak indicating c-axis orientation at 2θ. It is detected at =31° or near thereto. Note that the position of the peak indicating c-axis orientation (value of 2θ) is However, this may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0473] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) may be observed. ) is observed. Note that one spot and another spot are determined by the incident electron beam that has passed through the sample. Observations are made at point-symmetric positions with respect to the spot (also called a direct spot) as the center of symmetry. ru.

[0474] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, In the distortion described, there may be grid arrangements such as pentagons and heptagons. Note that CAAC-O In S, clear grain boundaries can be observed even near the strain. This is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This can be seen. This is because the arrangement of oxygen atoms in CAAC-OS is not dense in the ab-plane direction. Due to factors such as the substitution of metal atoms and the resulting change in the bond distance between atoms, strain occurs. This is thought to be because it allows for such tolerance.

[0475] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as polycrystalline. It is called l). The grain boundaries become recombination centers, where carriers are trapped and the transistor is formed This is highly likely to cause a decrease in current, a decrease in field-effect mobility, etc. Therefore, a clear crystal CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides. Note that CAAC-OS is composed of a structure containing Zn. A composition is preferred. For example, In-Zn oxide and In-Ga-Zn oxide are In oxides. This method is preferable because it can suppress the generation of grain boundaries more effectively.

[0476] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities or the formation of defects. Therefore, CAAC-OS can be considered an oxide semiconductor with few impurities or defects (such as oxygen vacancies). Therefore, oxide semiconductors containing CAAC-OS have stable physical properties. Oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. S is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0477] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. In other words, nc-OS is minute It has crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. In nc-OS, no regularity is observed in the crystal orientation between different nanocrystals. Therefore, across the entire film... No orientation is observed. Therefore, nc-OS is a-like depending on the analytical method. It can sometimes be indistinguishable from OS or amorphous oxide semiconductors. For example, with respect to an nc-OS film, When performing structural analysis using an XRD device, out-of-pla scans using θ / 2θ scans are performed. In ne XRD measurements, no peak indicating crystallinity is detected. Furthermore, compared to nc-OS films... Electron diffraction using electron beams with probe diameters larger than nanocrystals (e.g., 50 nm or larger). When electron diffraction (also called limited-field diffraction) is performed, a diffraction pattern resembling a halo pattern can be observed. It is measured. On the other hand, for the nc-OS film, the size is close to or smaller than that of the nanocrystals. Electron diffraction (nanobeam electron diffraction) using an electron beam with a lobe diameter (e.g., 1 nm to 30 nm) Also called sub-ray diffraction, when this is performed, multiple particles are found within a ring-shaped region centered on the direct spot. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0478] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, it has a-like properties. OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0479] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding.

[0480] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm in size. Preferably, a composition of materials that are unevenly distributed in sizes of 1 nm to 3 nm, or in the vicinity thereof. Yes. In the following, in metal oxides, one or more metal elements are unevenly distributed, and the metal The region containing the element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A mixture of these or similar sizes is also called a mosaic or patchy appearance.

[0481] Furthermore, CAC-OS is a system where the material separates into a first region and a second region, resulting in a mosaic effect. This results in a cloud-like structure, where the first region is distributed within the membrane (hereinafter also referred to as a cloud-like structure). Therefore, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following configuration.

[0482] Here, In for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of , Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is [ This is the region where [In] is greater than [In] in the composition of the CAC-OS film. Also, the second This region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, in the first region, [In] is greater than [In] in the second region. Furthermore, the region in which [Ga] is smaller than the region in the second region. In this region, [Ga] is greater than [Ga] in the first region, and [In] is This is a region smaller than [In] in the first region.

[0483] Specifically, the first region mentioned above is mainly composed of indium oxide, indium zinc oxide, etc. It is a certain region. Furthermore, the second region mentioned above mainly consists of gallium oxides, gallium zinc oxides, etc. This is a region that contains components. In other words, the first region described above can be rephrased as a region whose main component is In. It is possible to do so. Furthermore, the second region described above can be rephrased as a region with Ga as the main component. can.

[0484] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0485] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-ray spectroscopy is used. Law(EDX:Energy Dispersive X-ray spectrosco The EDX mapping obtained using py) shows the region with In as the main component (the first region) It has a structure in which a region mainly composed of ) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed. This can be confirmed.

[0486] When CAC-OS is used in a transistor, the conductivity is due to the first region and the second region The insulating properties resulting from this work in a complementary manner to enable the switching function (On / The function to turn it off can be added to CAC-OS. In other words, CAC-OS is In part of the material, it has conductive properties, and in part of the material, it has insulating properties, and the whole material It has the function of a semiconductor. By separating the conductive function and the insulating function, dual This allows for maximizing the functionality of the transistor. Therefore, CAC-OS is used in transistors. As a result, high on-current (I on ), high field-effect mobility (μ), and good switching It is possible to achieve the desired action.

[0487] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA. It may have two or more of the following: C-OS, nc-OS, and CAAC-OS.

[0488] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0489] By using the above oxide semiconductor in transistors, transistors with high field-effect mobility can be produced. It can be achieved. Furthermore, highly reliable transistors can be realized.

[0490] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15cm -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 c m -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductive film can be reduced to lower the defect level density. In this specification, High-purity intrinsic or substantially high-purity intrinsic refers to a product with...

Claims

1. The pixel portion has a first transistor, a second transistor, a capacitive element, and a light-emitting element. The source electrode or drain electrode of the first transistor is always in electrical contact with the gate electrode of the second transistor. A potential corresponding to the image data is applied to the gate electrode of the second transistor via the first transistor. The second transistor has the function of controlling the current flowing between the power line and the light-emitting element according to the potential, One electrode of the capacitive element is always in electrical contact with either the source electrode or the drain electrode of the first transistor. The other electrode of the capacitive element is in constant electrical contact with the pixel electrode of the light-emitting element in this light-emitting device, A first oxide semiconductor film having the channel region of the first transistor, A second oxide semiconductor film having the channel region of the second transistor, A first insulating film having a region positioned above the first oxide semiconductor film and a region positioned above the second oxide semiconductor film, A first conductive film having a region positioned above the first insulating film and functioning as one electrode of the capacitive element, A second conductive film having a region positioned above the first conductive film and functioning as the other electrode of the capacitive element, A second insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the second insulating film and always being electrically connected to the second conductive film, A third insulating film having a region positioned above the third conductive film, A fourth conductive film having a region positioned above the third insulating film and functioning as a power line, A fifth conductive film having a region positioned above the third insulating film and always being electrically connected to the third conductive film, A sixth conductive film having a region positioned above the fifth conductive film and functioning as a pixel electrode, The region of the second conductive film that overlaps with the first conductive film has a region that overlaps with the fourth conductive film. Light-emitting device.

2. The pixel portion has a first transistor, a second transistor, a capacitive element, and a light-emitting element. The source electrode or drain electrode of the first transistor is always in electrical contact with the gate electrode of the second transistor. A potential corresponding to the image data is applied to the gate electrode of the second transistor via the first transistor. The second transistor has the function of controlling the current flowing between the power line and the light-emitting element according to the potential, One electrode of the capacitive element is always in electrical contact with either the source electrode or the drain electrode of the first transistor. The other electrode of the capacitive element is in constant electrical contact with the pixel electrode of the light-emitting element in this light-emitting device, A first oxide semiconductor film having the channel region of the first transistor, A second oxide semiconductor film having the channel region of the second transistor, A first insulating film having a region positioned above the first oxide semiconductor film and a region positioned above the second oxide semiconductor film, A first conductive film having a region positioned above the first insulating film and functioning as one electrode of the capacitive element, A second conductive film having a region positioned above the first conductive film and functioning as the other electrode of the capacitive element, A second insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the second insulating film and always being electrically connected to the second conductive film, A third insulating film having a region positioned above the third conductive film, A fourth conductive film having a region positioned above the third insulating film and functioning as a power line, A fifth conductive film having a region positioned above the third insulating film and always being electrically connected to the third conductive film, A sixth conductive film having a region positioned above the fifth conductive film and functioning as a pixel electrode, The fourth conductive film does not overlap with the channel-forming region of the first oxide semiconductor film. The region of the second conductive film that overlaps with the first conductive film has a region that overlaps with the fourth conductive film. Light-emitting device.

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