Substrate processing apparatus and substrate processing method

Abstract

In a transport mechanism having a vertical articulated arm, the transport state of the substrate is appropriately corrected when the vertical articulated arm undergoes thermal expansion. [Solution] A substrate processing apparatus for processing substrates, comprising a transport mechanism for transporting the substrates and a control unit for controlling the transport mechanism, wherein the transport mechanism comprises a holding arm for holding the substrates and a vertical articulated arm that supports the holding arm and moves at least vertically, and the control unit performs control to correct the reference position of the holding arm and the horizontality of the holding surface of the holding arm when the vertical articulated arm undergoes thermal expansion.

Description

[Technical Field]

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate transport mechanism. The transport mechanism includes a holding arm for holding the substrate and a vertical articulated arm that moves in a vertical plane including a horizontal direction and a vertical direction. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-56064 [Overview of the project] [Problems that the invention aims to solve]

[0004] The technology disclosed herein provides for appropriately correcting the transport state of a substrate when the vertical articulated arm undergoes thermal expansion in a transport mechanism having a vertical articulated arm. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a transport mechanism for transporting the substrate; and a control unit for controlling the transport mechanism, wherein the transport mechanism comprises: a holding arm for holding the substrate; and a vertical articulated arm that supports the holding arm and moves at least vertically, and the control unit performs control to correct the reference position of the holding arm and the horizontality of the holding surface of the holding arm when the vertical articulated arm undergoes thermal expansion. In this disclosure, the holding surface of the holding arm refers to the surface on which the substrate held by the holding arm is positioned. [Effects of the Invention]

[0006] According to this disclosure, in a transport mechanism having a vertical articulated arm, the transport state of the substrate can be appropriately corrected when the vertical articulated arm undergoes thermal expansion. [Brief explanation of the drawing]

[0007] [Figure 1] This is a plan view showing a schematic configuration of the wafer processing apparatus according to this embodiment. [Figure 2] This is a perspective view showing the general configuration of the transport mechanism. [Figure 3] This is an explanatory diagram showing how a horizontally articulated arm moves within a horizontal plane. [Figure 4] This is an explanatory diagram showing how a vertically articulated arm moves within a vertical plane. [Figure 5] This is an explanatory diagram illustrating the operation of a transport mechanism through the coordinated movement of a horizontal articulated arm and a vertical articulated arm. [Figure 6] This is an explanatory diagram showing a conventional method for compensating for thermal expansion of a transport mechanism as a comparative example. [Figure 7] This is an explanatory diagram showing a method for correcting the thermal expansion of a transport mechanism according to this embodiment. [Figure 8] This is an explanatory diagram showing how the horizontality of a wafer held by a holding arm changes. [Figure 9] This is an explanatory diagram showing a model of the transport mechanism. [Figure 10] This is an explanatory diagram showing a method for correcting the thermal expansion of a transport mechanism according to the first embodiment. [Figure 11] This is an explanatory diagram illustrating the process of transporting a wafer by a transport mechanism in the first embodiment. [Figure 12] This is an explanatory diagram showing the temperature change of the first vertical arm in the second embodiment. [Figure 13] This is an explanatory diagram showing how the first vertical arm and the second vertical arm are imaged using the imaging unit in the second embodiment. [Figure 14] This is an explanatory diagram showing a method for correcting the thermal expansion of a transport mechanism according to the third embodiment. [Figure 15]It is an explanatory diagram showing a method for thermal expansion correction of a transport mechanism according to the fourth embodiment.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, a wafer processing apparatus as a substrate processing apparatus and a wafer processing method as a substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0009] <Wafer Processing Apparatus> FIG. 1 is a plan view showing an outline of the configuration of a wafer processing apparatus 1 according to the present embodiment. The wafer processing apparatus 1 is an example of a semiconductor manufacturing apparatus. In the following, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis orthogonal to each other in a three-dimensional space are defined. The X-axis and the Y-axis are each a horizontal axis, and the Z-axis is a vertical axis.

[0010] In the present embodiment, a case where the wafer processing apparatus 1 includes various processing modules for performing COR (Chemical Oxide Removal) processing, PHT (Post Heat Treatment) processing, CST (Cooling Storage) processing, and aligner processing on a wafer W as a substrate will be described. Note that the module configuration of the wafer processing apparatus 1 of the present embodiment is not limited to this and can be arbitrarily selected.

[0011] As shown in FIG. 1, the wafer processing apparatus 1 has a configuration in which an atmospheric pressure section 2 (for example, an atmospheric section) and a reduced pressure section 3 (for example, a vacuum section) are integrally connected. In the present embodiment, as will be described later, load lock modules 10a and 10b for transferring the wafer W between an atmospheric pressure atmosphere (for example, an atmospheric atmosphere) and a reduced pressure atmosphere (for example, a vacuum atmosphere) are installed inside the atmospheric pressure section 2. Further, the load lock modules 10a and 10b may be provided in two or more stages so as to overlap in a plan view, that is, so as to overlap in the Z-axis direction.

[0012] The atmospheric pressure section 2 includes a loader module 20. The loader module 20 consists of a rectangular housing, and the inside of the housing is maintained in an atmospheric pressure environment. The load lock modules 10a and 10b are located inside the loader module 20. Therefore, in this embodiment, unless otherwise specified, the load lock modules 10a and 10b are treated as components of the atmospheric pressure section 2.

[0013] The load lock module 10a has an upper stocker (not shown) and a lower stocker (not shown) that hold two wafers W vertically in order to temporarily hold the wafers W.

[0014] A gate 11a is formed in the load lock module 10a within the atmospheric pressure section 2 for transferring wafers W to the transport mechanism 30, which will be described later. The gate 11a is provided on the horizontal side (negative X-axis direction) of the load lock module 10a inside the loader module 20. A gate valve 12a is provided in the gate 11a to seal the inside of the load lock module 10a when not transferring wafers W, in order to maintain airtightness inside the load lock module 10a.

[0015] The load lock module 10a has a gate 13a on the side connected to the pressure reduction section 3 (the side on the positive Y-axis direction) that has the same function as the gate 11a. The gate 13a is provided with a gate valve 14a that has the same function as the gate valve 12a.

[0016] The load lock module 10a is connected to an air supply section (not shown) for supplying gas and an exhaust section (not shown) for discharging gas, and the internal environment can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere by the air supply section and the exhaust section. In other words, the load lock module 10a is configured to allow for the proper transfer of wafers W between the atmospheric pressure section 2, which maintains an atmospheric pressure atmosphere, and the reduced pressure section 3, which maintains a reduced pressure atmosphere.

[0017] The load lock module 10b has the same configuration as the load lock module 10a. Specifically, the load lock module 10b includes an upper stocker and a lower stocker, a gate 11b and a gate valve 12b on the normal pressure section 2 side, a gate 13b and a gate valve 14b on the pressure reduction section 3 side, and an air supply section and an exhaust section.

[0018] It should be noted that at least a portion of the load lock modules 10a and 10b are provided inside the loader module 20, and their other arrangements and numbers are not limited to this embodiment and can be set arbitrarily. For example, a portion of the load lock modules 10a and 10b may be provided inside the loader module 20, while the other portion is provided outside the loader module 20, between it and the pressure reduction unit 3.

[0019] The atmospheric pressure section 2 comprises a plurality of atmospheric pressure modules that perform desired processing on the wafer W under atmospheric pressure. The atmospheric pressure section 2 has a transport mechanism 30 for transporting the wafer W inside the loader module 20. The atmospheric pressure section 2 also has a load port 41 on which a hoop 40 capable of storing the wafer W is placed, a CST module 42 for cooling the wafer W, and an aligner module 43 for adjusting the horizontal orientation of the wafer W, located outside the loader module 20.

[0020] A transport mechanism 30 is provided inside the loader module 20. The transport mechanism 30 includes holding arms 31a and 31b, a horizontal articulated arm 32, a vertical articulated arm 33, and a support member 34. The holding arms 31a and 31b hold and move the wafer W. The tip of the horizontal articulated arm 32 is connected to the holding arms 31a and 31b, and the base is connected to the vertical articulated arm 33, and it moves in a horizontal plane (XY plane). The tip of the vertical articulated arm 33 is connected to the base of the horizontal articulated arm 32, and the base is supported by the support member 34, and it moves in a vertical plane (ZX plane) that includes both a horizontal direction (X axis direction) and a vertical direction (Z axis direction). Further details of the transport mechanism 30 will be described later.

[0021] As described above, the loader module 20 consists of a rectangular enclosure, and the inside of the enclosure is maintained in an atmospheric pressure environment. Multiple load ports 41, for example, five, are arranged side by side on one side (outer surface) that constitutes the long side of the loader module 20 enclosure. Load lock modules 10a and 10b are arranged side by side on the other side (inner surface) that constitutes the long side of the loader module 20 enclosure. A CST module 42 is provided on one side (outer surface) that constitutes the short side of the loader module 20 enclosure. An aligner module 43 is provided on the other side (outer surface) that constitutes the short side of the loader module 20 enclosure.

[0022] The number and arrangement of the load ports 41, CST modules 42, and aligner modules 43 are not limited to this embodiment and can be set arbitrarily. In addition, the loader module 20 may be provided with other atmospheric pressure modules, such as a wafer cleaning module or an optical film thickness measuring device.

[0023] The hoop 40 accommodates multiple layers of wafers W, for example, 25 wafers per lot, stacked at equal intervals. The inside of the hoop 40 placed on the load port 41 is sealed by filling it with, for example, air or nitrogen gas.

[0024] The CST module 42 can accommodate multiple wafers W, for example, more than the number of wafers that can be accommodated in the hoop 40, in multiple stages at equal intervals, and performs cooling processing on the multiple wafers W.

[0025] The aligner module 43 rotates the wafer W to adjust its horizontal orientation. Specifically, when performing wafer processing on multiple wafers W, the aligner module 43 adjusts the orientation from the horizontal relative to the reference position (e.g., the notch position) for each wafer W processing so that it is the same.

[0026] The pressure reduction unit 3 includes a transfer module 50. The transfer module 50 consists of a rectangular housing inside, and the inside of the housing is maintained in a reduced-pressure atmosphere. The pressure reduction unit 3 includes a plurality of pressure reduction modules that perform desired processing on the wafer W under reduced-pressure conditions. The pressure reduction unit 3 has a transport mechanism 60 for transporting the wafer W inside the transfer module 50. The pressure reduction unit 3 also includes a COR module 70 for performing COR processing on the wafer W and a PHT module 71 for performing PHT processing on the wafer W outside the transfer module 50.

[0027] As described above, the transfer module 50 is connected to the load lock modules 10a and 10b via gates 13a and 13b and gate valves 14a and 14b. In the depressurization section 3, the wafer W loaded into the load lock module 10a is sequentially loaded into one COR module 70 and one PHT module 71 for COR processing and PHT processing, and then transported to the atmospheric pressure section 2 via the load lock module 10b.

[0028] A transport mechanism 60 is provided inside the transfer module 50. The transport mechanism 60 has the same configuration as the transport mechanism 30. Specifically, the transport mechanism 60 includes holding arms 61a and 61b that hold and move the wafer W, a horizontal articulated arm 62 whose tip is connected to the holding arms 61a and 61b and moves in a horizontal plane (XY plane), a vertical articulated arm 63 whose tip is connected to the base end of the horizontal articulated arm 62 and moves in a vertical plane (ZY plane) including a horizontal direction (Y axis direction) and a vertical direction (Z axis direction), and a support member 64 that supports the base end of the vertical articulated arm 63.

[0029] Multiple COR modules 70 are arranged side by side on one side (outer surface) that constitutes the long side of the housing of the transfer module 50. Multiple PHT modules 71 are arranged side by side on the other side (outer surface) that constitutes the long side of the housing of the transfer module 50. The interiors of the COR modules 70 and the PHT modules 71 are maintained in a reduced-pressure atmosphere, respectively.

[0030] The COR module 70 performs COR processing on one or more wafers W. The COR module 70 is connected to an air supply section (not shown) for supplying processing gas and purge gas, and an exhaust section (not shown) for discharging gas. A gate 72 is formed in the COR module 70, and a gate valve 73 is provided in the gate 72. The COR module 70 is connected to the transfer module 50 via the gate 72 and the gate valve 73.

[0031] The PHT module 71 performs PHT processing on one or more wafers W. The PHT module 71 is connected to an air supply section (not shown) for supplying processing gas and purge gas, and an exhaust section (not shown) for discharging gas. A gate 74 is formed in the PHT module 71, and a gate valve 75 is provided in the gate 74. The PHT module 71 is connected to the transfer module 50 via the gate 74 and the gate valve 75.

[0032] The wafer processing apparatus 1 described above is provided with at least one control unit 80. The control unit 80 processes computer-executable instructions that cause the wafer processing apparatus 1 to perform the various processes described herein. The control unit 80 may be configured to control each element of the wafer processing apparatus 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 80 may be included in the wafer processing apparatus 1. The control unit 80 may include a processing unit, a storage unit, and a communication interface. The control unit 80 is implemented, for example, by a computer. The processing unit may be configured to read a program from the storage unit that provides logic or routines that enable various control operations, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or it may be retrieved via a medium when needed. The retrieved program is stored in the storage unit and read from the storage unit and executed by the processing unit. The medium may be various storage media readable by a computer, or it may be a communication line connected to a communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit), or it may be one or more circuits. The storage unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing device 1 via a communication line such as a LAN (Local Area Network).

[0033] <Wafer Processing Method> Next, we will describe the wafer processing in the wafer processing apparatus 1.

[0034] First, a hoop 40 containing multiple wafers W is placed on the load port 41. Next, the transport mechanism 30 removes the wafers W from the hoop 40 and transports them to the aligner module 43. In the aligner module 43, the orientation of the wafers W from the horizontal direction relative to a reference position (e.g., a notch position) is adjusted.

[0035] Next, the wafer W is transported to the load lock module 10a by the transport mechanism 30. Subsequently, the gate valve 12a is closed, sealing the inside of the load lock module 10a and reducing the pressure. After that, the gate valve 14a is opened, and the inside of the load lock module 10a and the inside of the transfer module 50 are connected.

[0036] Next, the wafer W is transported from the load lock module 10a to the transfer module 50 by the transport mechanism 60. Once the wafer W is removed from the load lock module 10a, the gate valve 14a is closed.

[0037] Next, the gate valve 73 is opened, and the wafer W is transported to the COR module 70 by the transport mechanism 60. After that, the gate valve 73 is closed, and the COR process is performed on the wafer W in the COR module 70.

[0038] When the COR process in the COR module 70 is completed, the gate valve 73 is opened and the wafer W is discharged by the transport mechanism 60. After that, the gate valve 73 is closed.

[0039] Next, the gate valve 75 is opened, and the wafer W is transported to the PHT module 71 by the transport mechanism 60. After that, the gate valve 75 is closed, and the wafer W undergoes PHT processing in the PHT module 71.

[0040] When the PHT process in the PHT module 71 is completed, the gate valve 75 is opened and the wafer W is ejected by the transport mechanism 60. After that, the gate valve 75 is closed.

[0041] Next, the gate valve 14b is opened, and the wafer W is transported to the load lock module 10b by the transport mechanism 60. Subsequently, the gate valve 14b is closed, sealing the inside of the load lock module 10b and opening it to the atmosphere. After that, the gate valve 12b is opened, and the inside of the load lock module 10b and the inside of the loader module 20 are connected.

[0042] Next, the wafer W is transported to the CST module 42 by the transport mechanism 30. In the CST module 42, the wafer W undergoes a cooling process.

[0043] Next, the wafer W is placed in the hoop 40 on the load port 41 by the transport mechanism 30. Then, the series of wafer processing operations in the wafer processing apparatus 1 is completed.

[0044] <Conveying mechanism> Figure 2 is a perspective view showing a schematic configuration of the transport mechanism 30 according to this embodiment. Since the transport mechanism 60 has the same configuration as the transport mechanism 30, a detailed explanation and illustration of it are omitted.

[0045] As described above, the transport mechanism 30 includes holding arms 31a, 31b, a horizontal articulated arm 32, a vertical articulated arm 33, and a support member 34. The holding arms 31a and 31b hold and move the wafer W. The horizontal articulated arm 32 has its tip connected to the holding arms 31a and 31b and its base connected to the vertical articulated arm 33, and moves in a horizontal plane (XY plane, hereinafter simply referred to as the horizontal plane). The vertical articulated arm 33 has its tip connected to the base of the horizontal articulated arm 32, and moves in a vertical plane (ZX plane, hereinafter simply referred to as the vertical plane) that includes both a horizontal direction (X-axis direction) and a vertical direction (Z-axis direction). In this disclosure, the term "horizontal plane" includes a substantially horizontal plane, that is, a plane slightly inclined from the horizontal plane. Similarly, the term "vertical plane" includes a substantially vertical plane, that is, a plane slightly inclined from the vertical plane.

[0046] Each holding arm 31a and 31b has a pick 100a and 100b at its tip, which serves as a holding part for holding the wafer W. The method of holding the wafer W with the picks 100a and 100b in an atmospheric pressure environment is arbitrary. For example, the picks 100a and 100b may hold the wafer W by vacuum suction, i.e., vacuum chuck. Alternatively, for example, the picks 100a and 100b may hold the wafer W by gripping its edge, i.e., edge grip. In the following description, the surface on which the wafer W is placed (the back surface of the wafer W) held by the picks 100a and 100b of the holding arms 31a and 31b is referred to as the holding surface.

[0047] Furthermore, the holding arms 61a and 61b of the transport mechanism 60 also have picks 100a and 100b at their tips, which serve as holding parts for holding the wafer W. However, since the holding arms 61a and 61b hold the wafer W in a reduced-pressure atmosphere, they hold the wafer W by, for example, frictional force.

[0048] The horizontal articulated arm 32 has multiple, for example, two first horizontal arms 110 and a second horizontal arm 111. The first horizontal arm 110 and the second horizontal arm 111 are arranged in this order from the tip end (holding arm 31a, 31b side) to the base end (vertical articulated arm 33 side) of the horizontal articulated arm 32.

[0049] The horizontal articulated arm 32 has a first horizontal joint 120, a second horizontal joint 121, and a third horizontal joint 122 as pivot axes. The first to third horizontal joints 120 to 122 have a drive unit (not shown), such as a motor. The first horizontal joint 120 connects the holding arms 31a, 31b and the first horizontal arm 110 so that they can rotate independently in the horizontal plane. The second horizontal joint 121 connects the first horizontal arm 110 and the second horizontal arm 111 so that they can rotate in the horizontal direction. The third horizontal joint 122 connects the second horizontal arm 111 and the tip of the vertical articulated arm 33 so that they can rotate in the horizontal direction.

[0050] The first horizontal joint 120, the second horizontal joint 121, and the third horizontal joint 122 are provided with a first temperature measuring unit 130, a second temperature measuring unit 131, and a third temperature measuring unit 132. For example, temperature sensors are used in the first to third temperature measuring units 130 to 132, and the first to third temperature measuring units 130 to 132 measure the temperature of the first to third horizontal joints 120 to 122.

[0051] The vertical articulated arm 33 has a connecting member 140 and a plurality of, for example, two first vertical arms 150 and a second vertical arm 151. The connecting member 140, the first vertical arm 150 and the second vertical arm 151 are arranged in this order from the tip end (vertical articulated arm 33 side) to the base end (support member 34 side) of the vertical articulated arm 33.

[0052] The vertical articulated arm 33 has a first vertical joint 160, a second vertical joint 161, and a third vertical joint 162 as pivot axes. The first to third vertical joints 160 to 162 have a drive unit (not shown), for example, a motor. The first vertical joint 160 connects the first vertical arm 150 to a connecting member 140 to which the second horizontal arm 111 is connected, so as to be rotatable in the vertical plane. The second vertical joint 161 connects the first vertical arm 150 and the second vertical arm 151 so as to be rotatable in the vertical plane. The third vertical joint 162 connects the second vertical arm 151 and a support member 34 so as to be rotatable in the vertical plane.

[0053] The first vertical joint 160, the second vertical joint 161, and the third vertical joint 162 are provided with a first temperature measuring unit 170, a second temperature measuring unit 171, and a third temperature measuring unit 172. For example, temperature sensors are used in the first to third temperature measuring units 170 to 172, and the first to third temperature measuring units 170 to 172 measure the temperature of the first to third vertical joints 160 to 162.

[0054] In this embodiment, the horizontal articulated arm 32 moves in a horizontal plane, but as the connecting member 140 to which the base end of the second horizontal arm 111 is connected moves in the vertical direction (Z-axis direction), the horizontal plane moves in the vertical direction.

[0055] As described above, by coordinating the movement of the horizontal articulated arm 32 and the vertical articulated arm 33, the holding arms 31a and 31b, which are the tips of the transport mechanism 30, can move freely in three-dimensional space (XYZ space) within the range permitted by the length of each arm. This allows the wafer W to be freely transported within any device. Furthermore, since both the horizontal articulated arm 32 and the vertical articulated arm 33 are responsible for movement in the same direction (X-axis direction), the wafer W can be transported over a sufficient distance in that same direction (X-axis direction) within any device (e.g., from one end to the other within the device).

[0056] <Operation of the conveying mechanism> Figure 3 is an explanatory diagram showing the movement of the horizontal articulated arm 32 in a horizontal plane, and Figure 4 is an explanatory diagram showing the movement of the vertical articulated arm 33 in a vertical plane. Figure 5 is an explanatory diagram showing the operation of the transport mechanism 30 by the coordinated movement of the horizontal articulated arm 32 and the vertical articulated arm 33.

[0057] As shown in Figure 3, the horizontal articulated arm 32 has angles φ at the first to third horizontal joints 120 to 122. 1a , φ 1b As φ2 and φ3 change, it moves within the horizontal plane. 1a , φ 1b These are the angles between the holding arms 31a and 31b and the first horizontal arm 110, respectively, and these can change independently. Angle φ2 is the angle between the first horizontal arm 110 and the second horizontal arm 111. Angle φ3 is the angle between the second horizontal arm 111 and the connecting member 140. For example, Figure 3(a) shows the horizontal articulated arm 32 in a shortened position with each arm folded. From this position, angle φ 1a By driving the rotation of each joint so that angle φ2 increases and angle φ3 decreases, the holding arm 31a can be extended as shown in Figures 3(b) and 3(c).

[0058] As shown in Figure 4, the vertical articulated arm 33 moves within the vertical plane as angles θ1, θ2, and θ3 at the first to third vertical joints 160 to 162 change. Angle θ1 is the angle between the connecting member 140 and the first vertical arm 150. Angle θ2 is the angle between the first vertical arm 150 and the second vertical arm 151. Angle θ3 is the angle between the second vertical arm 151 and the support member 34. For example, from the state shown in Figure 4(a), by driving the rotation of each joint so that angle θ1 decreases, angle θ2 remains unchanged, and angle θ3 decreases, the posture shown in Figure 4(b), that is, the posture in which the connecting member 140 moves horizontally (in the X-axis direction), can be achieved.

[0059] Furthermore, for example, from the state shown in Figure 4(b), the rotation of each joint can be driven so that angle θ1 does not change, while angles θ2 and θ3 increase, thereby achieving the posture shown in Figure 4(c), that is, a posture in which the connecting member 140 has moved vertically. Thus, in this embodiment, the vertical articulated arm 33 may be configured such that the connecting member 140 can move downward (in the negative Z-axis direction) from the connection portion between the second vertical arm 151, which is the base end, and the support member 34.

[0060] As shown in Figure 5, the transport mechanism 30 can change its posture from the posture shown by the solid line in Figure 5(a) to the posture shown by the dashed line by moving both the horizontal articulated arm 32 and the vertical articulated arm 33 in the negative direction of the X axis. In other words, in this embodiment, since both the horizontal articulated arm 32 and the vertical articulated arm 33 of the transport mechanism 30 are configured to move in the X axis direction, they both carry out movement in the same direction in the X axis direction, allowing the holding arms 31a and 31b, which are the tips of the transport mechanism 30, to move a sufficient distance in that same direction.

[0061] Furthermore, as shown in Figure 4(c), in the vertical articulated arm 33, the connecting member 140 is configured to move downward (in the negative Z-axis direction) from the connection point between the second vertical arm 151, which is the base end, and the support member 34. As shown in Figure 5(b), the horizontal articulated arm 32 connected to the connecting member 140 can move downward from the connection point. This makes it possible to transport wafers W even with a sufficient height difference (Z-axis distance) within any device.

[0062] <Method for compensating for thermal expansion of conveying mechanisms> Next, we will explain how to compensate for thermal expansion of the conveying mechanisms 30 and 60. The following explanation will focus on the thermal expansion compensation method for conveying mechanism 30 operating under normal pressure, but the same method applies to conveying mechanism 60 operating under reduced pressure.

[0063] Figure 6 is an explanatory diagram showing a thermal expansion correction method for a conventional transport mechanism 30 as a comparative example. Figure 7 is an explanatory diagram showing a thermal expansion correction method for a transport mechanism 30 according to this embodiment. In Figures 6 and 7, only one of the holding arms 31a and 31b is shown and described as the holding arm 31, and only one of the picks 100a and 100b is shown and described as the pick 100.

[0064] As shown in Figure 6(a), the transport mechanism 30 expands thermally from its initial state, as shown in Figure 6(b). For example, in the transport mechanism 30, the first vertical arm 150 and the second vertical arm 151 of the vertical articulated arm 33 expand thermally in the vertical plane (ZX plane). There are various causes of thermal expansion; for example, the drive units in the first to third vertical joints 160 to 162 of the transport mechanism 30 generate heat, causing the vertical articulated arm 33 to expand thermally. Alternatively, the vertical articulated arm 33 may also expand thermally due to changes in the surrounding environment. When the vertical articulated arm 33 expands thermally in this way, the center position of the wafer W held by the holding arm 31 moves from the initial state shown in Figure 6(a), as shown in Figure 6(b). The amount of movement of the holding arm 31 is the amount of thermal expansion E in the X-axis direction of the vertical articulated arm 33.

[0065] In conventional thermal expansion correction methods, as shown in Figure 6(c), the angles θ1 to θ3 of the first to third vertical joints 160 to 162 are adjusted to correct the center position of the wafer W to its initial state. However, while conventional thermal expansion correction methods can correct the center position of the wafer W, the wafer W becomes tilted.

[0066] Therefore, in this embodiment, as shown in Figure 7, when the vertical articulated arm 33 undergoes thermal expansion, the center position of the wafer W is corrected, as well as the horizontality of the wafer W. Figure 7(a) shows the initial state of the transport mechanism 30, and Figure 7(b) shows the case when the transport mechanism 30 undergoes thermal expansion. Figures 7(a) and 7(b) are the same as Figures 6(a) and 6(b) described above, respectively, and in the transport mechanism 30, the first vertical arm 150 and the second vertical arm 151 of the vertical articulated arm 33 undergo thermal expansion in the vertical plane (ZX plane). When the vertical articulated arm 33 undergoes thermal expansion, as shown in Figure 7(b), the reference position of the holding arm 31, that is, the center position of the wafer W held by the holding arm 31, moves from the initial state shown in Figure 7(a) by the amount of thermal expansion E in the X-axis direction of the vertical articulated arm 33. In this embodiment, the reference position of the holding arm 31 is set to the center position of the wafer W, but this reference position can be set arbitrarily.

[0067] In the thermal expansion correction method according to this embodiment, as shown in Figure 7(c), the center position of the wafer W is corrected by adjusting at least one of the angles θ1 to θ3 of the first to third vertical joints 160 to 162. That is, the center position of the wafer W is corrected so that it moves back by the amount of thermal expansion E in the X-axis direction. At the same time, the horizontality of the wafer W is also corrected by adjusting at least one of the angles θ1 to θ3 of the first to third vertical joints 160 to 162. The horizontality of the wafer W corresponds to the horizontality of the holding surface (transport surface) of the holding arm 31 in this disclosure. The specific method for adjusting the angles θ1 to θ3 of the first to third vertical joints 160 to 162 will be described later.

[0068] Figure 8 is an explanatory diagram showing how the horizontality of the wafer W held by the holding arm 31 changes. Figure 8(a) shows the state of the wafer W when the conventional thermal expansion correction method shown in Figure 6(c) is performed, and the wafer W is tilted. That is, the apparent thickness T1 of the wafer W projected onto the ZY plane becomes larger.

[0069] In contrast, Figure 8(b) shows the state of the wafer W when the thermal expansion method according to this embodiment shown in Figure 7(c) is performed, and the wafer W is maintained horizontally. In this case, the apparent thickness T2 of the wafer W projected onto the ZY plane becomes smaller than the apparent thickness T1 described above.

[0070] Here, there is a limit to the height (hereinafter referred to as "slot pitch") of the slot into which the wafer W held by the holding arm 31 enters, such as the entrance / exit of the hoop 40. In such a case, if the wafer W is tilted as shown in Figure 8(a), and the apparent thickness T1 is greater than the slot pitch, the wafer W cannot enter the slot. On the other hand, if the wafer W is kept horizontal as shown in Figure 8(b), the apparent thickness T2 can be made smaller than the slot pitch, and the wafer W can enter the slot.

[0071] Furthermore, in recent years, there has been a tendency for the thickness of objects to be transported held by the holding arm 31 to increase. For example, wafers W may be thicker than normal, for example, two or three times thicker. Also, if the wafer W warps, its apparent thickness increases. In addition, the transport mechanism 30 may transport objects other than wafers W. For example, when the holding arm 31 holds a maintenance jig wafer (jig substrate), the thickness of the maintenance jig wafer may be greater than the thickness of the wafer W. Also, for example, when the holding arm 31 holds parts used in each module, the thickness of those parts may be greater than the thickness of the wafer W. When the apparent thickness of the object to be transported increases in this way and becomes larger than the slot pitch, it becomes difficult to insert the object into the slot. In this respect, according to this embodiment, the object to be transported held by the holding arm 31 can be kept horizontal, so the apparent thickness can be reduced and the object to be transported can be inserted into the slot.

[0072] As described above, the thermal expansion correction method of this embodiment allows for appropriate correction of the center position of the wafer W and the horizontality of the wafer W. As a result, the transport mechanism 30 can appropriately transport the wafer W to the transport destination, improving transport accuracy. For example, the transport of the wafer W from the hoop 40 to the aligner module 43, the transport of the wafer W from the aligner module 43 to the load lock module 10a, the transport of the wafer W from the load lock module 10b to the CST module 42, and the transport of the wafer W from the CST module 42 to the hoop 40 can be performed appropriately.

[0073] Furthermore, since the transport mechanism 30 can properly transport the wafer W from the aligner module 43 to the load lock module 10a, the amount of thermal expansion correction in the transport mechanism 60 can be reduced. As a result, the transport accuracy of the transport mechanism 60 can be improved, and the COR processing in the COR module 70 and the PHT processing in the PHT module 71 can be performed properly.

[0074] The transport mechanism 30 transports the wafer W in an atmospheric pressure environment, and as described above, the holding arm 31 holds the wafer W with a vacuum chuck or edge grip. For example, when edge gripping the wafer W, the holding arm 31 performs the alignment of the wafer W itself, so it is necessary to perform thermal expansion compensation while taking into account the horizontality of the wafer W when edge gripping.

[0075] The thermal expansion correction method of the above embodiment may be applied to the entire transport path of the transport mechanism 30, or it may be applied to two locations, the transport source and the transport destination, or only to the transport destination. This can be arbitrarily selected depending on the required transport accuracy and computational load.

[0076] For example, when the transport mechanism 30 transports a wafer W from the aligner module 43 to the load lock module 10a, the horizontality of the wafer W may be corrected so that the wafer W is always horizontal along the transport path from the aligner module 43 to the load lock module 10a. In this case, the transport accuracy of the transport mechanism 30 described above can be reliably improved.

[0077] Alternatively, for example, when the transport mechanism 30 transports a wafer W from the aligner module 43 to the load lock module 10a, only the horizontality of the wafer W in the aligner module 43 (the source of transport) and the horizontality of the wafer W in the load lock module 10a (the destination) may be corrected. Or, only the horizontality of the wafer W in the load lock module 10a (the destination) may be corrected. In other words, no correction of the horizontality of the wafer W is performed during the transport of the wafer W. In this case, the computational load can be reduced.

[0078] In the embodiments described above, the method for correcting the thermal expansion of the transport mechanism 30 has been explained, but the method for correcting the thermal expansion of the transport mechanism 60 is similar. That is, when the vertical articulated arm 63 undergoes thermal expansion, the center position of the wafer W held by the holding arm 61 is corrected, and the horizontality of the wafer W is also corrected. In this case, the same effects as in the embodiments described above can be enjoyed, and the transport accuracy of the wafer W by the transport mechanism 60 can be improved. As a result, the COR processing in the COR module 70 and the PHT processing in the PHT module 71 can be performed appropriately.

[0079] In the above embodiments, the transport mechanisms 30 and 60 have horizontal articulated arms 32 and 62 and vertical articulated arms 33 and 63. However, some conventional transport mechanisms do not use vertical articulated arms for vertical movement and only have horizontal articulated arms. If such a transport mechanism undergoes thermal expansion, even if the center position of the wafer is corrected, the tilt of the wafer will not change as shown in Figure 6(c). Therefore, the thermal expansion correction method of this embodiment is useful when the transport mechanisms 30 and 60 have vertical articulated arms 33 and 63.

[0080] <Calculation method for thermal expansion correction of conveying mechanism> Next, we will explain the specific adjustment method (calculation method) for the angles θ1 to θ3 of the first to third vertical joints 160 to 162 when implementing the thermal expansion correction method described above. The following explanation will focus on the thermal expansion correction method for the transport mechanism 30, but the method for the thermal expansion correction method for the transport mechanism 60 is similar.

[0081] (First Embodiment) In the first embodiment, we will describe the case where the horizontal articulated arm 32 does not undergo thermal expansion, and the first vertical arm 150 and the second vertical arm 151 of the vertical articulated arm 33 undergo thermal expansion in the vertical plane (ZX plane).

[0082] First, the transport mechanism 30 is modeled. Figure 9 is an explanatory diagram showing the model of the transport mechanism 30. The holding arm 31 and wafer W shown in Figure 9(a) are represented as the wafer center Wc in the model shown in Figure 9(b). The wafer center Wc is the center of the back surface of the wafer W. The horizontal articulated arm 32 shown in Figure 9(a) is represented as one link in the model shown in Figure 9(b), and its length is L1. The first vertical arm 150 shown in Figure 9(a) is represented as one link in the model shown in Figure 9(b), and its length is L2. The second vertical arm 151 shown in Figure 9(a) is represented as one link in the model shown in Figure 9(b), and its length is L3. These first vertical arm 150 and second vertical arm 151 undergo thermal expansion, and their lengths L2 and L3 change. The angles of the first to third vertical joints 160 to 162 are defined as angles θ1 to θ3 as described above. Furthermore, the coordinates of the wafer center Wc are (X1, Z1), the coordinates of the first vertical joint 160 are (X2, Z2), and the coordinates of the second vertical joint 161 are (X3, Z3).

[0083] Next, a method for correcting thermal expansion when the first vertical arm 150 and the second vertical arm 151 undergo thermal expansion will be described. Figure 10 is an explanatory diagram showing a method for correcting thermal expansion of the transport mechanism 30 according to the first embodiment. Figure 10(a) shows the initial state of the transport mechanism 30. Figure 10(b) shows the state in which the transport mechanism 30 has undergone thermal expansion. Figure 10(c) shows the state in which the position of the first vertical joint 160 has been corrected to the initial state. Figure 10(d) shows the state in which the wafer W has been corrected to be horizontal.

[0084] As shown in Figure 10(a), in the initial state before thermal expansion, the coordinates (X2, Z2) of the first vertical joint 160 can be expressed by the following equation (1). (X2,Z2)={L2cos(θ2+θ3)+L3cosθ3,L2sin(θ2+θ3)+L3sinθ3} ···(1)

[0085] Next, as shown in Figure 10(b), suppose the first vertical arm 150 and the second vertical arm 151 undergo thermal expansion, changing their lengths L2 and L3 to L2' and L3'. In this case, as described above, the horizontal articulated arm 32 does not undergo thermal expansion, and its length remains L1. In this case, the coordinates (X2', Z2') of the first vertical joint 160 are calculated using the following equation (2). That is, the amount of displacement Δ of the coordinates of the first vertical joint 160 is given by the following equation (3). (X2',Z2')={L2'cos(θ2+θ3)+L3'cosθ3,L2'sin(θ2+θ3)+L3'sinθ3}...(2) Δ=(X²'-X²,Z²'-Z²) ···(3)

[0086] Next, as shown in Figure 10(c), the angle of the second vertical joint 161 is adjusted to θ2', and the angle of the third vertical joint 162 is adjusted to θ3', thereby correcting the position of the first vertical joint 160 to its initial state. The coordinates (X2", Z2") of the corrected first vertical joint 160 are then calculated using the following equation (4). Note that the angles of the second vertical joint 161 and the third vertical joint 162 may be adjusted together or individually. (X2”,Z2”)={L2'cos(θ2'+θ3')+L3'cosθ3',L2'sin(θ2'+θ3')+L3'sinθ3'} ···(4)

[0087] In this case, the coordinates (X2, Z2) of the corrected first vertical joint 160 can be corrected to the initial coordinates (X2, Z2). Then, the coordinates of the center position of the wafer W become (X1, Z1). However, since the angle θ1 of the first vertical joint 160 does not change, the corrected wafer W is tilted rather than horizontal. The displacement angle Δθ of the wafer center Wc in this case is calculated using the following equation (5). Δθ={(θ2+θ3-θ1)-(θ2'+θ3'-θ1)} ···(5)

[0088] Therefore, as shown in Figure 10(d), the angle of the first vertical joint 160 is adjusted to θ1' to correct the horizontality of the wafer W. That is, the angle θ1' of the first vertical joint 160 is adjusted so that the displacement angle Δθ of the wafer center Wc calculated by equation (5) above becomes zero. At this time, equation (5) above becomes equation (6) below, and the angle θ1' of the first vertical joint 160 is calculated by equation (7) below. 0={(θ2+θ3-θ1)-(θ2'+θ3'-θ1')} ···(6) θ1'=-(θ2+θ3-θ1-θ2'-θ3') ···(7)

[0089] In such cases, the horizontality of the wafer W is corrected so that the wafer W is horizontal. Furthermore, the coordinates of the wafer center Wc after correction can also be corrected to the initial coordinates (X1, Z1).

[0090] As described above, by adjusting the angles θ1 to θ3 of the first to third vertical joints 160 to 162, the center position of the wafer W and the horizontality of the wafer W can be corrected. As a result, the transport accuracy of the wafer W by the transport mechanism 30 can be improved.

[0091] As described above, the thermal expansion correction method of this embodiment may be applied to the entire transport path of the transport mechanism 30, or it may be applied to two locations, the transport source and the transport destination, or only to the transport destination.

[0092] Figure 11 is an explanatory diagram modeling the transport mechanism 30 transporting a wafer W in the first embodiment. As shown in Figure 11, for example, when transporting a wafer W from point A (source) to point B (destination), if the wafer W is always kept horizontal along the transport path from point A to point B, the reference angle θ of the first vertical joint 160 is calculated by the following formula (8). S It is sufficient to maintain a constant angle. That is, even if the angles θ1, θ2, and θ3 of the first to third vertical joints 160 to 162 shown in Figure 11(a) change to angles θ1', θ2', and θ3', the reference angle θ of the first vertical joint 160 remains constant. SIf [a certain value] is fixed, the wafer W can always be kept horizontal. Even if the angles θ1, θ2, and θ3 in the first to third vertical joints 160 to 162 vary with acceleration or speed in an arbitrary pattern, at any given time, the reference angle θ of the first vertical joint 160 S may be kept constant. θ S = θ2 + θ3 - θ1 = θ2’ + θ3’ - θ1’ ···(8)

[0093] Also, if the wafer W is kept horizontal only at points A and B and the flatness of the wafer W is not corrected during conveyance, the flatness correction of the wafer W in the above-described embodiment is performed only at points A and B. Alternatively, even if the wafer W is kept horizontal only at point B and the flatness of the wafer W is not corrected during conveyance, the flatness correction of the wafer W in the above-described embodiment is performed.

[0094] (Second Embodiment) In the above first embodiment, when the first vertical arm 150 and the second vertical arm 151 thermally expand, the lengths L2’ and L3’ after thermal expansion can be derived by any method.

[0095] For example, the first temperature measurement unit 170 measures the temperature T1 of the initial state of the first vertical joint 160 and the temperature T1’ after thermal expansion. Also, the second temperature measurement unit 171 measures the temperature T2 of the initial state of the second vertical joint 161 and the temperature T2’ after thermal expansion. The temperature measurement results of the first temperature measurement unit 170 and the second temperature measurement unit 171 are output to the control unit 80. And in the control unit 80, when the temperature changes ΔT of the first vertical joint 160 and the second vertical joint 161 are the same as shown in Fig. 12(a), the length L2’ of the first vertical arm 150 after thermal expansion is calculated by the following formula (9). L2’ = (ΔTε + 1)L2···(9) However, ΔT = |T1’ - T1| = |T2’ - T2|, ε: coefficient of thermal expansion

[0096] As shown in Figure 12(b), a temperature gradient may exist between the temperature T1' of the first vertical joint 160 and the temperature T2' of the second vertical joint 161 after thermal expansion. In such cases, the average value of temperatures T1 and T2 may be used as the representative temperature, and the temperature change ΔT of the first vertical joint 160 and the second vertical joint 161 may be calculated using the following equation (10). ΔT=|(T1+T2) / 2-(T1'+T2') / 2| ···(10)

[0097] Furthermore, as shown in Figure 12(c), the temperature gradient between the temperature T1' of the first vertical joint 160 and the temperature T2' of the second vertical joint 161 after thermal expansion may not be linear. For example, the temperature of the central part of the first vertical arm 150, which is far from the heat sources, the first vertical joint 160 and the second vertical joint 161, may be low. In such cases, the average value of temperatures T1 and T2 may be used as the representative temperature, and the temperature change ΔT of the first vertical joint 160 and the second vertical joint 161 may be calculated using the following equation (11) by multiplying this representative value by an approximation coefficient α. ΔT=α×|(T1+T2) / 2-(T1'+T2') / 2| ···(11)

[0098] The length L3' of the second vertical arm 151 after thermal expansion can be calculated in the same way as the length L2' of the first vertical arm 150 after thermal expansion. Specifically, the initial temperature T2 of the second vertical joint 161 is measured by the second temperature measuring unit 171, and the temperature T2' after thermal expansion is measured. Also, the initial temperature T3 of the third vertical joint 162 is measured by the third temperature measuring unit 172, and the temperature T3' after thermal expansion is measured. Based on these measured temperatures, the length L3' of the second vertical arm 151 after thermal expansion is calculated using equations (9) to (11) above.

[0099] Alternatively, for example, as shown in Figure 13, the first vertical arm 150 and the second vertical arm 151 may be imaged using the imaging unit 200. For example, a CCD camera may be used for the imaging unit 200. The image captured by the imaging unit 200 is output to the control unit 80. The control unit 80 then derives the lengths L2' and L3' of the first vertical arm 150 and the second vertical arm 151 after thermal expansion based on the captured image.

[0100] As described above, the lengths L2' and L3' of the first vertical arm 150 and the second vertical arm 151 after thermal expansion can be derived by any method. Then, using the derived lengths L2' and L3', the thermal expansion correction method of the first embodiment can be executed to correct the center position of the wafer W and the horizontality of the wafer W.

[0101] (Third embodiment) In the first embodiment described above, the case in which the first vertical arm 150 and the second vertical arm 151 of the vertical articulated arm 33 expand thermally in the vertical plane (ZX plane) and the horizontal articulated arm 32 does not expand thermally was explained. In the third embodiment, the case in which the horizontal articulated arm 32 expands thermally in the vertical plane (ZX plane) will be explained. Figure 14 is an explanatory diagram showing a method for correcting thermal expansion of the transport mechanism 30 according to the third embodiment.

[0102] As shown in Figure 14, when the horizontal articulated arm 32 and the vertical articulated arm 33 undergo thermal expansion, the length of the horizontal articulated arm 32 becomes L1', and the lengths of the first vertical arm 150 and the second vertical arm 151 become L2' and L3', respectively. In this case, the angle of the first vertical joint 160 may also change to θ1'.

[0103] The amount of displacement Δ of the coordinates of the first vertical joint 160 due to the change in the length of the horizontal articulated arm 32 to L1' is calculated by equation (12) below. Then, the coordinates (X2', Z2') of the first vertical joint 160 after thermal expansion are calculated by adding the amount of displacement Δ from equation (11) below to equation (2) above, and using equation (13) below. Δ=(L1'-L1)×{cos(θ2'+θ3'-θ1'),sin(θ2'+θ3'-θ1')} ···(12) (X2',Z2')={(L1'-L1)cos(θ2'+θ3'-θ1')+L2'cos(θ2+θ3)+L3'cosθ3,(L1'-L1)sin(θ2'+θ3'-θ1')+L2'sin(θ2+θ3)+L3'sinθ3}...(13)

[0104] In such cases, instead of equation (2) in the first embodiment described above, equation (13) is used to adjust the angle of the second vertical joint 161 to θ2', adjust the angle of the third vertical joint 162 to θ3', and correct the position of the first vertical joint 160 to its initial state. Subsequent correction of the center position of the wafer W and correction of the horizontality of the wafer W are the same as in the first embodiment described above.

[0105] In the second embodiment described above, the center position of the wafer W and the horizontality of the wafer W can be corrected by adjusting the angles θ1 to θ3 of the first to third vertical joints 160 to 162. As a result, the transport accuracy of the wafer W by the transport mechanism 30 can be improved.

[0106] (Fourth Embodiment) In the first embodiment described above, the case in which the first vertical arm 150 and the second vertical arm 151 of the vertical articulated arm 33 undergo thermal expansion in the vertical plane (ZX plane) was explained. In the fourth embodiment, the case in which the first vertical arm 150 and the second vertical arm 151 undergo thermal expansion in both the horizontal plane (XY plane) and the vertical plane (ZX plane) will be explained. Figure 15 is an explanatory diagram showing a method for correcting the thermal expansion of the transport mechanism 30 according to the fourth embodiment.

[0107] Figure 15(a) shows the initial state of the horizontal articulated arm 32. Then, as shown in Figure 15(b), when the first vertical arm 150 and the second vertical arm 151 undergo thermal expansion in the horizontal plane, at least one of the angles φ1, φ2, and φ3 in the first to third horizontal joints 120 to 122 is adjusted as shown in Figure 15(c). Then, the horizontal position of the wafer center Wc is corrected to the initial state.

[0108] Subsequently, similar to the thermal expansion correction method of the first embodiment shown in Figure 10, when the first vertical arm 150 and the second vertical arm 151 undergo thermal expansion in the vertical plane, the angles θ1 to θ3 of the first to third vertical joints 160 to 162 are adjusted to correct the center position of the wafer W and the horizontality of the wafer W.

[0109] In the fourth embodiment described above, the center position of the wafer W and the horizontality of the wafer W can be corrected by adjusting the angles φ1, φ2, and φ3 at the first to third horizontal joints 120 to 122, and further by adjusting the angles θ1 to θ3 at the first to third vertical joints 160 to 162. As a result, the transport accuracy of the wafer W by the transport mechanism 30 can be improved.

[0110] <Other Embodiments> In the transport mechanism 30 of the above embodiment, the vertical articulated arm 33 has two vertical arms 150 and 151, but the number of vertical arms is not limited to this, and there may be one or three or more. In such cases, the center position of the wafer W and the horizontality of the wafer W can be corrected by adjusting the angle of each joint provided on each vertical arm.

[0111] Similarly, in the transport mechanism 30 of the above embodiments, the horizontal articulated arm 32 had two horizontal arms 110 and 111, but the number of vertical arms is not limited to this; there may be one or three or more. In such cases, as in the fourth embodiment, the center position of the wafer W can be corrected by adjusting the angle of each joint provided in each horizontal arm.

[0112] In the transport mechanism 30 of the above embodiment, the first to third vertical joints 160 to 162 of the vertical articulated arm 33 have a drive unit (not shown), for example, a motor. However, the first to third vertical joints 160 to 162 may be driven by a link mechanism using a timing belt, for example. In this case, the center position of the wafer W and the horizontality of the wafer W can be corrected by adjusting the angle θ3 of the third vertical joint 162 at the base end.

[0113] Similarly, in the transport mechanism 30 of the above embodiment, the first to third horizontal joints 120 to 122 of the horizontal articulated arm 32 have a drive unit (not shown), for example, a motor, but the first to third horizontal joints 120 to 122 may also be driven by a link mechanism using a timing belt, for example. In such a case, similar to the fourth embodiment, the center position of the wafer W can be corrected by adjusting the angle φ3 of the third horizontal joint 122 at the base end.

[0114] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0115] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein. [Explanation of symbols]

[0116] 1. Wafer processing equipment 30 Conveying mechanism 31a, 31b Holding arms 33 Vertical multi-joint arm 60 Conveying mechanism 61a, 61b Holding arms 63 Vertical multi-joint arm 80 Control Unit W wafer

Claims

1. A substrate processing apparatus for processing substrates, A transport mechanism for transporting the aforementioned substrate, It includes a control unit that controls the transport mechanism, The aforementioned transport mechanism is A retaining arm for holding the substrate, The holding arm is supported by a vertical articulated arm that moves at least vertically, The control unit performs control to correct the reference position of the holding arm and the horizontality of the holding surface of the holding arm when the vertical articulated arm undergoes thermal expansion, thereby providing a substrate processing apparatus.

2. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The substrate processing apparatus according to claim 1, wherein the tip of the vertical articulated arm is connected to the base end of the horizontal articulated arm and moves in a vertical plane including a horizontal direction and a vertical direction.

3. The aforementioned vertical multi-joint arm is A vertical arm and A first vertical joint is provided at the tip of the vertical arm, It has a second vertical joint provided in a location other than the tip of the aforementioned vertical arm, The control unit, when the vertical articulated arm undergoes thermal expansion in a vertical plane including both the horizontal and vertical directions, Control to adjust the angle of the second vertical joint to correct the position of the first vertical joint in the vertical plane, The substrate processing apparatus according to claim 1, further comprising: adjusting the angle of the first vertical joint to perform control for correcting the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

4. The control unit, A control system that adjusts the angle of the second vertical joint based on the length of the vertical arm after thermal expansion to correct the position of the first vertical joint in the vertical plane, The substrate processing apparatus according to claim 3, comprising: performing control to adjust the angle of the first vertical joint based on the corrected position of the first vertical joint in the vertical plane, thereby correcting the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

5. It has a temperature measuring unit for measuring the temperature of the vertical arm, The substrate processing apparatus according to claim 4, wherein the control unit performs control to derive the length of the vertical arm after thermal expansion based on the temperature of the vertical arm measured by the temperature measuring unit.

6. It has an imaging unit that images the vertical arm, The substrate processing apparatus according to claim 4, wherein the control unit performs control to derive the length of the vertical arm after thermal expansion based on the image captured by the imaging unit.

7. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The vertical articulated arm has its tip connected to the base end of the horizontal articulated arm and moves within the vertical plane. The control unit, A control system that adjusts the angle of the second vertical joint based on the length of the vertical arm after thermal expansion and the length of the horizontal arm in the horizontal articulated arm after thermal expansion to correct the position of the first vertical joint in the vertical plane, The substrate processing apparatus according to claim 3, comprising: performing control to adjust the angle of the first vertical joint based on the corrected position of the first vertical joint in the vertical plane, thereby correcting the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

8. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The aforementioned vertical articulated arm has its tip connected to the base end of the aforementioned horizontal articulated arm, and moves within a vertical plane that includes both a horizontal and a vertical direction. The aforementioned horizontal articulated arm is Horizontal arm and A first horizontal joint is provided at the tip of the horizontal arm, It has a second horizontal joint provided in a location other than the tip of the aforementioned horizontal arm, The aforementioned vertical multi-joint arm is A vertical arm and A first vertical joint is provided at the tip of the vertical arm, It has a second vertical joint provided in a location other than the tip of the aforementioned vertical arm, The control unit, when the vertical articulated arm undergoes thermal expansion in the horizontal plane and the vertical plane, Control to correct the reference position of the holding arm in the horizontal plane by adjusting the angle of at least the first horizontal joint or the second horizontal joint, Control to adjust the angle of the second vertical joint to correct the position of the first vertical joint in the vertical plane, The substrate processing apparatus according to claim 1, further comprising: adjusting the angle of the first vertical joint to perform control for correcting the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

9. The substrate processing apparatus according to any one of claims 3 to 8, wherein the control unit performs control to correct the horizontality of the holding surface of the holding arm by adjusting the reference angle obtained by subtracting the angle of the first vertical joint from the sum of the angles of the second vertical joint while the holding arm is moving, so as the holding arm moves.

10. The substrate processing apparatus according to any one of claims 3 to 8, wherein the control unit, when the holding arm moves from the transport source to the transport destination, performs control to adjust the angle of the first vertical joint at the transport destination to correct the horizontality of the holding surface of the holding arm.

11. A substrate processing method for processing a substrate in a substrate processing apparatus, The substrate processing apparatus has a transport mechanism for transporting the substrate, The aforementioned transport mechanism is A retaining arm for holding the substrate, The holding arm is supported by a vertical articulated arm that moves at least vertically, The substrate processing method includes correcting the reference position of the holding arm and correcting the horizontality of the holding surface of the holding arm when the vertical articulated arm undergoes thermal expansion.

12. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The substrate processing method according to claim 11, wherein the tip of the vertical articulated arm is connected to the base end of the horizontal articulated arm and moves in a vertical plane including a horizontal direction and a vertical direction.

13. The aforementioned vertical multi-joint arm is A vertical arm and A first vertical joint is provided at the tip of the vertical arm, It has a second vertical joint provided in a location other than the tip of the aforementioned vertical arm, The substrate processing method is performed when the vertical articulated arm undergoes thermal expansion in a vertical plane that includes both a horizontal and a vertical direction. Adjusting the angle of the second vertical joint to correct the position of the first vertical joint in the vertical plane, The substrate processing method according to claim 11, further comprising adjusting the angle of the first vertical joint to correct the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

14. Based on the length of the vertical arm after thermal expansion, the angle of the second vertical joint is adjusted to correct the position of the first vertical joint in the vertical plane. The substrate processing method according to claim 13, comprising adjusting the angle of the first vertical joint based on the corrected position of the first vertical joint in the vertical plane to correct the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

15. The substrate processing method according to claim 14, further comprising deriving the length of the vertical arm after thermal expansion based on the temperature of the vertical arm measured by the temperature measuring unit.

16. The substrate processing method according to claim 14, further comprising deriving the length of the vertical arm after thermal expansion based on an image captured by the imaging unit.

17. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The vertical articulated arm has its tip connected to the base end of the horizontal articulated arm and moves within the vertical plane. The substrate processing method is Based on the length of the vertical arm after thermal expansion and the length of the horizontal arm in the horizontal articulated arm after thermal expansion, the angle of the second vertical joint is adjusted to correct the position of the first vertical joint in the vertical plane. The substrate processing method according to claim 13, comprising adjusting the angle of the first vertical joint based on the corrected position of the first vertical joint in the vertical plane to correct the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

18. The transport mechanism has a horizontal articulated arm whose tip is connected to the holding arm and moves in a horizontal plane. The aforementioned vertical articulated arm has its tip connected to the base end of the aforementioned horizontal articulated arm, and moves within a vertical plane that includes both a horizontal and a vertical direction. The aforementioned horizontal articulated arm is Horizontal arm and A first horizontal joint is provided at the tip of the horizontal arm, It has a second horizontal joint provided in a location other than the tip of the aforementioned horizontal arm, The aforementioned vertical multi-joint arm is A vertical arm and A first vertical joint is provided at the tip of the vertical arm, It has a second vertical joint provided in a location other than the tip of the aforementioned vertical arm, The substrate processing method is performed when the vertical articulated arm undergoes thermal expansion in the horizontal plane and the vertical plane. The angle of at least the first horizontal joint or the second horizontal joint is adjusted to correct the reference position of the holding arm in the horizontal plane, Adjusting the angle of the second vertical joint to correct the position of the first vertical joint in the vertical plane, The substrate processing method according to claim 11, further comprising adjusting the angle of the first vertical joint to correct the reference position of the holding arm in the vertical plane and the horizontality of the holding surface of the holding arm.

19. A substrate processing method according to any one of claims 13 to 18, comprising adjusting the reference angle obtained by subtracting the angle of the first vertical joint from the sum of the angles of the second vertical joints while the holding arm is moving, to correct the horizontality of the holding surface of the holding arm.

20. A substrate processing method according to any one of claims 13 to 18, further comprising adjusting the angle of the first vertical joint at the destination when the holding arm moves from the source to the destination, thereby correcting the horizontality of the holding surface of the holding arm.

Images