Pattern forming body, method for manufacturing a pattern forming body, wiring structure, and method for manufacturing a wiring structure

Abstract

To provide a pattern-forming body that allows for easy manufacturing and processing of wiring structures. [Solution] The pattern forming body 200 comprises a main body portion 201 made of a light-transmitting material, a pillar structure portion 202, and a light-shielding pattern 203. The light-shielding pattern 203 is provided on the first surface 201A of the main body portion 201. The pillar structure portion 202 protrudes from a second surface 201B facing the first surface 201A and is composed of a plurality of pillars 202A made of a light-transmitting material. The shape and arrangement of the light-shielding pattern 203 when viewed from a direction perpendicular to the first surface 201A corresponds to the shape and arrangement of the wiring 407 in the wiring structure 400. The shape and arrangement of the pillars 202A when viewed from the same direction corresponds to the shape and arrangement of the vias 406 in the wiring structure 400.

Description

Technical Field

[0001] The present disclosure relates to a pattern forming body, a method for manufacturing the pattern forming body, a wiring structure, and a method for manufacturing the wiring structure.

Background Art

[0002] In recent years, miniaturization, high functionality, and multifunctionality of electronic components and devices have progressed. In order to meet these needs, higher density of elements and narrower pitch of wirings in semiconductor chips mounted on electronic components and the like have been demanded.

[0003] For example, an interposer, which is a wiring substrate inserted between a semiconductor chip and a mounting substrate, plays a role of effectively connecting semiconductor devices and modules with different shapes and pitches. Therefore, by using an interposer in electronic components and the like, high-density circuit formation becomes possible. There are glass interposers, organic interposers, etc. depending on the material of the base material of the interposer. When forming vias in an interposer, for example, after forming via holes inside the base material by etching, photolithography, or the like, metal plating or the like is applied inside the via holes to form vias. Also, when forming wirings in an interposer, a mask pattern is formed on the front surface and / or the back surface of the interposer. After applying metal plating or the like inside the mask pattern, the mask pattern is removed to form wirings. Vias connect wirings in different layers to each other or connect a wiring to land electrodes provided on the front surface and / or the back surface of the interposer.

[0004] On the other hand, in recent years, an imprint method has been attracting attention as a wiring formation method alternative to etching and photolithography. The imprint method is a method of forming a mask pattern or a via hole by transferring a pattern to an insulating resist made of an insulating material using a pattern forming body on which a fine pattern is formed and curing the insulating resist. In this case, the cured insulating resist is not removed and becomes a part of the base material of the interposer.

[0005] Furthermore, there are two types of imprinting methods: thermal imprinting and UV imprinting. Thermal imprinting involves applying an insulating resist to a substrate, applying heat to increase the fluidity of the insulating resist, and then pressing a pattern forming body onto the surface of the substrate under pressure to form a mask pattern and via holes in the insulating resist before releasing the pattern forming body. UV imprinting involves applying a UV-curable insulating resist to a substrate, pressing a pattern forming body onto the surface of the substrate coated with the insulating resist, and then irradiating it with UV light to cure the insulating resist and form a mask pattern and via holes. These imprinting methods allow for the formation of fine patterns with high precision.

[0006] Furthermore, in recent years, the development of multi-stage pattern forming bodies for imprinting has progressed, and various methods for forming them have been proposed (see, for example, Patent Document 1). In this imprinting method using a multi-stage pattern forming body, vias and wiring patterns can be formed simultaneously, and a three-dimensional multilayer wiring structure can be efficiently formed by stacking multiple conductive layers. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2012-23242 [Overview of the project] [Problems that the invention aims to solve]

[0008] However, in the method disclosed in Patent Document 1, alignment and processing of the first and second steps formed on the pattern-forming body are difficult. Therefore, it is difficult to ensure the alignment accuracy of fine patterns of 1 μm or less, and there is a risk that the desired pattern cannot be obtained. In addition, in the method disclosed in Patent Document 1, since multiple steps are formed on the substrate, the manufacturing cost of the pattern-forming body increases.

[0009] Furthermore, when imprinting is performed using a multi-stage pattern form, the total aspect ratio of the steps, that is, the ratio of the width to the height of the steps, becomes higher compared to when imprinting is performed using a pattern form with a single step. In this case, immediately after imprinting, the hardened insulating material adheres to the entire surface of the multi-stage steps in the pattern form, resulting in poor release properties of the pattern form.

[0010] This disclosure has been made in view of the foregoing, and its purpose is to provide a pattern forming body that can be easily manufactured and processed, a method for manufacturing a pattern forming body, a wiring structure, and a method for manufacturing a wiring structure. [Means for solving the problem]

[0011] To achieve the above objective, a pattern forming body according to one aspect of the present disclosure is a pattern forming body used to form a wiring structure having wiring and vias connecting the wiring of different layers, comprising at least a main body made of a light-transmitting material, a light-shielding pattern made of a light-shielding material and provided on a first surface of the main body, and a pillar structure protruding from a second surface of the main body facing the first surface and composed of a plurality of pillars made of the light-transmitting material, wherein the shape and arrangement of the light-shielding pattern as viewed from a direction perpendicular to the first surface corresponds to the shape and arrangement of the wiring, and the shape and arrangement of the plurality of pillars as viewed from a direction perpendicular to the first surface corresponds to the shape and arrangement of the vias.

[0012] A method for manufacturing a patterned body according to one aspect of the present disclosure is a method for manufacturing a patterned body used to form a wiring structure having wiring and vias connecting the wiring of different layers, and is characterized by comprising at least the steps of: forming a first hard mask layer on the back surface of a substrate made of a light-transmitting material; forming a first resist film on the first hard mask layer and processing the first resist film to form a first resist pattern; etching the first hard mask layer using the first resist pattern as a mask to form a first hard mask pattern; etching the substrate using the first hard mask pattern as a mask to form a pillar structure having a plurality of pillars; removing at least the first resist pattern; and forming a light-shielding pattern made of a light-shielding material on the surface of the substrate.

[0013] A wiring structure according to one aspect of the present disclosure comprises a first substrate, an insulating structure having a first insulating layer and a second insulating layer laminated together, and wiring and vias provided on the insulating structure, wherein the second insulating layer is provided on the surface of the first substrate, the first insulating layer is provided on the surface of the second insulating layer, the side surface of the wiring is in contact with the first insulating layer, and the side surface of the via is in contact with at least the second insulating layer, the first insulating layer is a cured product of a photosensitive material, and the second insulating layer is a cured product of a non-photosensitive material.

[0014] A method for manufacturing a wiring structure according to one aspect of the present disclosure is a method for manufacturing a wiring structure using the pattern forming body, comprising the steps of: applying a non-photosensitive resist to the surface of a first substrate and then heating it at a first temperature; applying a photosensitive resist to the surface of the non-photosensitive resist after heating; heating the first substrate at a second temperature after applying the photosensitive resist to reduce the fluidity of the non-photosensitive resist and the photosensitive resist; reducing the fluidity of the non-photosensitive resist and pressing the pattern forming body toward the first substrate with the tip of the pillar in contact with the photosensitive resist; and pressing the pattern forming body toward the first The method is characterized by comprising the steps of: forming an uncured portion in the photosensitive resist by irradiating it with UV light from a surface; demolding a pattern forming body from the non-photosensitive resist and the photosensitive resist; removing the uncured photosensitive resist by washing; heating the first substrate at a third temperature after performing the demolding step of the pattern forming body or after performing the removal step of the uncured photosensitive resist to fully cure at least the non-photosensitive resist; and forming the vias and wiring in a single step by plating recesses formed in a laminate of the cured photosensitive resist and the cured non-photosensitive resist. [Effects of the Invention]

[0015] According to this disclosure, wiring structures having wiring and vias can be easily manufactured and processed. Furthermore, the release properties of pattern forming bodies during the manufacturing of wiring structures can be improved. In addition, the yield reduction of wiring structures can be suppressed, thereby reducing manufacturing costs. [Brief explanation of the drawing]

[0016] [Figure 1A] This is a schematic cross-sectional view of a pattern-forming body according to the first embodiment. [Figure 1B] This is a schematic diagram of the pattern-forming body according to the first embodiment, viewed from a direction perpendicular to the first surface. [Figure 1C] This is a perspective view of a pattern-forming body according to the first embodiment. [Figure 2A] It is a schematic diagram for explaining the manufacturing process of a pattern forming body according to the first embodiment. [Figure 2B] It is a schematic diagram for explaining the subsequent manufacturing process shown in FIG. 2A. [Figure 3A] It is a schematic diagram for explaining another manufacturing process of a pattern forming body according to the first embodiment. [Figure 3B] It is a schematic diagram for explaining the subsequent manufacturing process shown in FIG. 3A. [Figure 4] It is a schematic diagram for explaining the manufacturing process of a wiring structure according to the first embodiment. [Figure 5] It is a perspective view of a wiring structure according to the first embodiment. [Figure 6A] It is a schematic cross-sectional view of a pattern forming body according to the second embodiment. [Figure 6B] It is a schematic diagram of a pattern forming body according to the second embodiment viewed from a direction orthogonal to the first surface. [Figure 6C] It is a perspective view of a pattern forming body according to the second embodiment. [Figure 7] It is a schematic diagram for explaining the manufacturing process of a wiring structure according to the second embodiment. [Figure 8A] It is a schematic cross-sectional view of a pattern forming body according to the third embodiment. [Figure 8B] It is a schematic diagram of a pattern forming body according to the third embodiment viewed from a direction orthogonal to the first surface. [Figure 8C] It is a perspective view of a pattern forming body according to the third embodiment. [Figure 9A] It is a schematic diagram for explaining the manufacturing process of a pattern forming body according to the third embodiment. [Figure 9B] It is a schematic diagram for explaining the subsequent manufacturing process shown in FIG. 9A. [Figure 10] It is a schematic diagram for explaining the manufacturing process of a wiring structure according to the third embodiment. [Figure 11] It is a schematic diagram for explaining the manufacturing process of another pattern forming body.

Embodiments for Carrying Out the Invention

[0017] Embodiments of the present disclosure will be described below with reference to the drawings. The following description of preferred embodiments is illustrative in nature and is not intended to limit the present disclosure, its applications, or its uses.

[0018] (First embodiment) [Structure of pattern-forming organisms] The structure of the pattern-forming body will be described below with reference to the drawings.

[0019] Figure 1A is a schematic cross-sectional view of the pattern-forming body according to this embodiment. Figure 1B is a schematic view of the pattern-forming body as seen from a direction perpendicular to the first surface. Figure 1C is a perspective view of the pattern-forming body.

[0020] Note that Figure 1A corresponds to the cross-section along the IA-IA line in Figure 1C. Furthermore, in each of the subsequent drawings, all cross-sectional views correspond to the cross-section along the same dashed line, the IA-IA line.

[0021] The pattern-forming body 200 shown in Figures 1A to 1C has a main body 201, a pillar structure 202, and a light-shielding pattern 203. As will be described later, the main body 201 and the pillar structure 202 are obtained by processing a base material 301 (see Figures 2A and 2B) made of a light-transmitting material. In other words, the main body 201 and the pillar structure 202 are formed integrally. The pattern-forming body 200 is a component used to manufacture the wiring structure 400 (see Figures 4 and 5), which will be described later, and is a so-called imprint mold.

[0022] The material of the base material 301, that is, the main body portion 201 and the pillar structure portion 202, is preferably an inorganic material such as quartz glass from the viewpoint of robustness and thermal stability, but it may also be a light-transmitting resin. Furthermore, as will be described later, the base material 301 may be any material that transmits UV light, for example, light with a wavelength of 380 μm or less. In the following description, the material of the base material 301 is quartz glass.

[0023] The main body portion 201 is a rectangular parallelepiped, and a light-shielding pattern 203 is provided on the first surface 201A. Further, a plurality of pillars 202A project from the second surface 201B facing the first surface 201A at intervals from each other. The pillar structure portion 202 is a collection of a plurality of pillars 202A. In addition, the height of the pillar 202A in the present embodiment is about several μm, and the diameter is about 1 μm, but it is not particularly limited thereto and can be appropriately changed respectively. For example, the height of the pillar 202A may be 10 μm, or the diameter may be about 0. several μm to several μm. That is, the pitch of the pillars 202A on the second surface 201B may be about 1 μm to several μm.

[0024] The light-shielding patterns 203 are each made of a light-shielding material. The light-shielding material may be any material that shields the aforementioned UV light. For example, chromium (Cr), aluminum (Al), silicon oxide (SiOx), silicon nitride (SiNx), etc. can be used. In addition, from the viewpoint of having high light-shielding properties against UV light, it is preferable to select chromium as the light-shielding material.

[0025] The shape and arrangement of the light-shielding pattern 203 as viewed from a direction orthogonal to the first surface 201A correspond to the shape and arrangement of the wiring 407 (see FIGS. 4 and 5) in the wiring structure 400. Further, the shape and arrangement of the pillar structure portion 202, that is, the plurality of pillars 202A as viewed from a direction orthogonal to the first surface 201A correspond to the shape and arrangement of the via 406 in the wiring structure 400.

[0026] [Manufacturing method of pattern forming body] FIG. 2A is a schematic diagram for explaining the manufacturing process of the pattern forming body according to the first embodiment. FIG. 2B is a schematic diagram for explaining the subsequent manufacturing process shown in FIG. 2A. FIG. 3 is a schematic diagram for explaining another manufacturing process of the pattern forming body according to the first embodiment. FIG. 3B is a schematic diagram for explaining the subsequent manufacturing process shown in FIG. 3A.

[0027] <a: Formation of the first hard mask layer> As shown in FIG. 2A, after preparing the substrate 301, a first hard mask layer 302 is formed on the back surface of the substrate 301. The back surface of the substrate 301 corresponds to the second surface 201B of the main body 201. The method for forming the first hard mask layer 302 is appropriately selected from a sputtering method, an electron beam evaporation method, a CVD (chemical vapor deposition) method, or the like.

[0028] The first hard mask pattern 305 obtained by processing the first hard mask layer 302 is used as an etching mask for the substrate 301, which will be described later. Therefore, the first hard mask layer 302 is selected from a material that has high corrosion resistance against the etching of the substrate 301 made of quartz glass and has an etching selectivity ratio with quartz glass that is higher than a predetermined value. For example, the material of the first hard mask layer 302 is selected from chromium, aluminum, silicon oxide, silicon nitride, or the like. Among these, from the viewpoints of corrosion resistance and etching selectivity ratio with quartz glass, it is preferable that the material of the first hard mask layer 302 be chromium.

[0029] <b: Formation of the first resist film> Next, a first resist film 303, which is a photosensitive resist, is formed on the first hard mask layer 302. The method for forming the first resist film 303 in the present embodiment is a coating method. For example, a spin coating method or a die coating method is used.

[0030] <c: Formation of the first resist pattern> Next, the first resist film 303 is processed into a first resist pattern 304 by photolithography technology. That is, using an exposure mask (not shown), the first resist film 303 is exposed and developed to form the first resist pattern 304. By using a photosensitive resist as the first resist film 303 and photolithography technology, which is widely used in semiconductor manufacturing technology, a fine and highly dimensionally accurate first resist pattern 304 can be formed.

[0031] <d: Formation of the first hard mask pattern> Next, by means of an etching technique, the first hard mask layer 302 is processed into a first hard mask pattern 305 using the first resist pattern 304 as an etching mask. As the etching technique, dry etching using plasma, wet etching using an acidic or alkaline solution, or the like is used.

[0032] <e: Substrate etching> Next, the first resist pattern 304 is removed, and the remaining first hard mask pattern 305 is used as an etching mask to anisotropically etch the substrate 301 to form the pillar structure portion 202. In this case, the substrate 301 is anisotropically etched so that the height of the pillar 202A is the same as the sum of the thickness of the wiring 407 and the height of the second via 406B described later. For example, the substrate 301 is anisotropically etched so that the height of the pillar 202A is about 5 μm to 6 μm.

[0033] The etching method can use either of the above-described dry etching or wet etching. However, when the diameter of the pillar 202A is 1 μm or less, or when the distance between adjacent pillars 202A is equal to or less than the height of the pillar 202A, it is preferable to use dry etching. Note that the first resist pattern 304 may be removed after the substrate 301 is anisotropically etched.

[0034] Also, the first resist pattern 304 is removed by a known resist strip process. There are a wet process and a dry process as the resist strip process, and either can be used. In the wet process, an alkaline solution, an amine-based solution, or a stripping solution based on an organic solvent is brought into contact to remove the first resist pattern 304. In the dry process, the first resist pattern 304 made of an organic substance is ashed by exposing the first resist pattern 304 in a gas containing oxygen plasma or ozone. Note that the residue of the first resist pattern 304 may be removed with a cleaning solution or the like after ashing.

[0035] <f: Removal of the first hard mask pattern> After forming the pillar structure portion 202, the first hard mask pattern 305 is removed.

[0036] In the removal of the first hard mask pattern 305, there are a wet process and a dry process using an acidic solution, and either may be used. As the dry process, for example, plasma etching using a mixed gas of a chlorine-based gas and a gas containing oxygen is used.

[0037] <g: Formation of the second hard mask layer> Next, as shown in FIG. 2B, a second hard mask layer 306 is formed on the surface of the substrate 301. The surface of the substrate 301 corresponds to the first surface 201A of the main body portion 201. The method of forming the second hard mask layer 306 is the same as that of the first hard mask layer 302. Further, since the light-shielding pattern 203 is obtained by processing the second hard mask layer 306, the material of the second hard mask layer 306 is preferably chromium as described above.

[0038] <h: Formation of the second resist film> Next, a second resist film 307 is formed on the second hard mask layer 306. The method of forming the second resist film 307 is the same as that of the first resist film 303. Also, for the reasons described above, the second resist film 307 is also a photosensitive resist.

[0039] <i: Formation of the second resist pattern> Next, the second resist film 307 is processed into a second resist pattern 308 by photolithography technology. The method of forming the second resist pattern 308 is the same as that of the first resist pattern 304. Since the main body portion 201 is made of a light-transmissive material, the shape of the pillar structure portion 202 can be optically recognized when viewed from the first surface 201A. An exposure mask (not shown) for forming the second resist pattern 308 is aligned with the corner portion or the like of the pillar structure portion 202 and then the second resist film 307 is exposed. By doing so, the alignment accuracy between the second resist pattern 308, and thus the second hard mask pattern 309 and the pillar structure portion 202, can be improved.

[0040] <j: Formation of the second hard mask pattern> Next, by means of an etching technique, the second hard mask layer 306 is processed into a second hard mask pattern 309 using the second resist pattern 308 as an etching mask. The processing method of the second hard mask pattern 309 is the same as that of the first hard mask pattern 305.

[0041] <k: Completion> Finally, the second resist pattern 308 is removed, and the pattern formation body 200 is completed. Note that the removal method of the second resist pattern 308 is the same as that of the first resist pattern 304.

[0042] Also, after removing the second resist pattern 308, by subjecting the surface of the pattern formation body 200 to a release treatment, the releasability of the pattern formation body 200 can be improved during the manufacture of a wiring structure body 400 described later. For example, a release agent containing a fluorine-based material such as silicone or a fluororesin is applied and fixed, etc., to subject the surface of the pattern formation body 200 to a release treatment.

[0043] Note that the method of forming the light-shielding pattern 203 is not limited to the method described above, that is, the method of processing the second hard mask layer 306 formed on the surface of the base material 301 to obtain the second hard mask pattern 309 as the light-shielding pattern 203.

[0044] For example, a light-shielding pattern 203 may be obtained by selectively applying a light-reflecting material to the surface of the base material 301. In this case, a resist pattern (not shown; for the shape and arrangement of the opening pattern, refer to FIGS. 6A to 6C) having an opening pattern is formed on the surface of the base material 301. This resist pattern is an inverted pattern of the second hard mask pattern 309. It is formed using a known photolithography technique similar to the first resist pattern 304 and the second resist pattern 308. After forming the resist pattern, the light-reflecting material is applied over the entire surface. After performing a process of fixing the applied light-reflecting material to the surface of the base material 301, the resist pattern is removed to obtain the light-shielding pattern 203. The light-reflecting material is, for example, a substance that reflects UV light dispersed in a solvent having a predetermined viscosity. Note that although it is preferable that the light-reflecting material remains only inside the opening pattern, since it is removed together when the resist pattern is removed, the light-reflecting material may remain on the upper surface of the resist pattern.

[0045] Note that a resist may be applied to the surface of the base material 301, and an opening pattern may be formed in the resist using an imprint mold having the same structure as the pattern forming body 200 shown in FIGS. 1A to 1C. In this case, as will be described later, the imprint mold is pressed against the resist and pressurized in a state where the fluidity of the resist is reduced. By separating the imprint mold from the resist, an opening pattern is obtained.

[0046] [Configuration and Manufacturing Method of Wiring Structure] FIG. 4 is a schematic diagram for explaining the manufacturing process of the wiring structure according to the first embodiment. FIG. 5 is a perspective view of the wiring structure according to the first embodiment.

[0047] Hereinafter, a method for manufacturing the wiring structure 400 using the pattern forming body 200 shown in FIGS. 1A to 1C will be described with reference to FIG. 4.

[0048] [Resin Coating]< First, a non-photosensitive resist 402 is applied to the surface of a first substrate 401 made of an insulating material. After applying the non-photosensitive resist 402, the first substrate 401 is heated to pre-bake the non-photosensitive resist 402. The non-photosensitive resist 402 is an insulating resist such as polyimide, and hardens when heated above a predetermined temperature.

[0049] When applying the non-photosensitive resist 402, it is preferable to use the spin coating method or die coating method described above. This improves the controllability and uniformity of the film thickness of the non-photosensitive resist 402.

[0050] The final film thickness of the non-photosensitive resist 402 varies depending on the amount of solvent that evaporates after pre-baking. Therefore, the non-photosensitive resist 402 is applied so that the film thickness after pre-baking reaches the target film thickness. In this embodiment, the target film thickness after pre-baking is approximately 3 μm to 5 μm. However, this target film thickness can be appropriately changed depending on the design value of the via height 406 and the subsequent manufacturing process.

[0051] In this embodiment, the pre-bake temperature is approximately 90 to 120°C, and the pre-bake time is approximately 1 to 5 minutes. However, these pre-bake conditions may be appropriately changed depending on the type of non-photosensitive resist 402, the thermal imprinting conditions described later, and the type of equipment used.

[0052] After pre-baking the non-photosensitive resist 402, a photosensitive resist 403 is applied to the surface of the non-photosensitive resist 402. In this embodiment, the photosensitive resist 403 is a negative-type insulating resist. That is, the parts irradiated with UV light harden, but the unexposed parts that are not irradiated with UV light do not harden and remain uncured. The uncured parts can be easily removed with a developer. The method of applying the photosensitive resist 403 is the same as the method of applying the non-photosensitive resist 402. Furthermore, the photosensitive resist 403 is applied so that the film thickness after application is approximately 2 μm to 3 μm. However, this film thickness may be appropriately changed depending on the design value of the height of the wiring 407 and the subsequent manufacturing process.

[0053] <b:Thermal imprint> Next, the first substrate 401 coated with the non-photosensitive resist 402 and the photosensitive resist 403 is heated to a predetermined temperature. Usually, a stage (not shown) on which the first substrate 401 is placed is heated to a predetermined temperature.

[0054] By heating the first substrate 401, the fluidity of the non-photosensitive resist 402 and the photosensitive resist 403 can be reduced, and as described later, the molding by the pattern forming body 200 during thermal imprint can be facilitated. The heating temperature in this step depends on the type of the non-photosensitive resist 402, but generally it is about 50°C to 200°C.

[0055] While heating the first substrate 401 at a predetermined temperature, with the tip of the pillar 202A abutted against the photosensitive resist 403, the pattern forming body 200 is pressed against the first substrate 401 to apply pressure. By doing so, the shapes of the plurality of pillars 202A in the pillar structure portion 202 are transferred to the insulating structure composed of the non-photosensitive resist 402 and the photosensitive resist 403. The pressing force for pressing the pattern forming body 200 against the first substrate 401 is about 1.5 MPa to 15 MPa. However, this pressing force can be changed according to the fluidity of the non-photosensitive resist 402.

[0056] After maintaining the state where the pattern forming body 200 is pressed against the first substrate 401 for about 1 minute to 5 minutes, the above-mentioned stage is cooled down to fix the shape of the transferred pattern. It is preferable that the surface of the pattern forming body 200 is previously subjected to the above-mentioned release treatment.

[0057] In addition, when wirings and / or land electrodes, etc. are previously formed on the surface of the first substrate 401, alignment between the wirings, etc. and the light-shielding pattern 203 is performed, and positioning of the pattern forming body 200 with respect to the first substrate 401 is performed. Then, the pattern forming body 200 is abutted against the photosensitive resist 403, and further pressure is applied toward the first substrate 401.

[0058] Note that after heating the first substrate 401 coated with the non-photosensitive resist 402 to reduce the fluidity of the non-photosensitive resist 402, the photosensitive resist 403 may be applied to the surface of the non-photosensitive resist 402. In that case, instead of heating the first substrate 401, the pattern former 200 may be pressed against the first substrate 401 and pressurized. As described above, when the first substrate 401 is heated in a state where the non-photosensitive resist 402 and the photosensitive resist 403 are applied, and further the pattern former 200 is pressed against the first substrate 401 and pressurized, the non-photosensitive resist 402 and the photosensitive resist 403 are softened. Therefore, the formability by the pattern former 200 is improved.

[0059] <c:UV imprint> Next, UV light 404 is irradiated from above the photosensitive resist 403. The photosensitive resist 403 irradiated with the UV light 404 changes into an insulating photocured product 403A. On the other hand, the photosensitive resist 403 located directly below the light-shielding pattern 203 of the pattern former 200 remains uncured. Note that the irradiation of the UV light 404 may be performed simultaneously with the cooling of the stage described above.

[0060] After the photosensitive resist 403 not shielded by the light-shielding pattern 203 is sufficiently cured, the pattern former 200 is held by a vacuum suction nozzle (not shown) or the like, and the nozzle is pulled up to release the pattern former 200 from the insulating structure.

[0061] After the pattern former 200 is released, the first substrate 401 on which the above-described insulating structure is formed is heated again to fully cure the non-photosensitive resist 402 and change it into an insulating thermoset 402A. The full cure temperature varies depending on the type and characteristics of the resin constituting the non-photosensitive resist 402, but is generally about 100°C to 200°C.

[0062] <d: Removal of uncured resist> Next, the photosensitive resist 403 is treated with a developer to remove any uncured portions of the photosensitive resist 403. These uncured portions correspond to the shape and arrangement of the light-shielding pattern 203 when viewed from above. Furthermore, any remaining film of non-photosensitive resist 402 between the tip of the pillar 202A and the first substrate 401 before demolding is removed. The remaining film may be removed by wet cleaning using an acidic or alkaline solution, or by dry etching. Alternatively, organic cleaning using an organic solution may be used.

[0063] Furthermore, the main curing step of the non-photosensitive resist 402 described above may be performed after the uncured resist removal step. Alternatively, post-exposure baking may be performed after irradiation of the photosensitive resist 403 with UV light 404 but before treatment with the developer. By performing post-exposure baking, changes in the shape of the photocured product 403A due to development can be suppressed. In addition, if the non-photosensitive resist 402 is a polyimide-based resin material, the curing state changes depending on the heating temperature. Therefore, by performing post-exposure baking before the main curing of the non-photosensitive resist 402, the thermal curing of the non-photosensitive resist can be promoted, and the main curing time can be shortened.

[0064] By performing the steps described above, multiple recesses can be formed in the insulating structure. These recesses serve as the prototypes for the shapes of vias 406 and wiring 407 in the wiring structure 400.

[0065] <e:めっき> Next, the first substrate 401, which includes the insulating structure, is plated with metal to fill multiple recesses formed in the insulating structure with metal. Of these recesses, the metal filling the through-holes that penetrate the insulating structure in the thickness direction becomes the first via 406A. The metal filling the recesses formed after the uncured photosensitive resist 403 is removed becomes the wiring 407. The metal filling the via holes that reach the first substrate 401 from the bottom surface of the wiring 407 becomes the second via 406B. In other words, the second via 406B is a via that connects the wiring 407 and the wiring structure 400 in the thickness direction. The first via 406A and the second via 406B are collectively referred to as via 406. In short, by performing metal plating, the wiring 407 and vias 406 are formed simultaneously and collectively in multiple recesses formed in the insulating structure.

[0066] When performing metal plating, either electroless plating or electrolytic plating may be used. When performing electrolytic plating, it is preferable to form a seed layer made of a conductive material on the surface of the first substrate 401 before applying the non-photosensitive resist 402. The seed layer is, for example, a thin metal film made of Cu, Ni, or Ti.

[0067] A first substrate 401, which has an insulating structure, is impregnated into an electroplating bath (not shown), and by passing an electric current between an electrode provided in the electroplating bath and a seed layer, metal grows on the surface of the seed layer and fills the aforementioned recesses with metal. The plating solution contains, for example, Cu or Au, and a bottom-up type fill plating is suitable. Even if the shape of the recesses is fine or complex, the injection of the plating solution is easy. In order to perform plating on fine-shaped recesses without generating voids, it is important to appropriately set the type and concentration of additives contained in the plating solution, the metal ion concentration in the plating solution, the circulation method and flow rate of the plating solution, etc. Note that a seed layer is not necessary when charging metal by electroless plating.

[0068] After the metal plating process, the wiring structure shown in Figure 5 is obtained. It is preferable to heat the wiring structure 400 on which the wiring 407 and vias 406 are formed to a predetermined temperature after the plating process. This heat treatment stabilizes the metal constituting the wiring 407 and vias 406, improving the conductivity of the wiring 407 and vias 406. Furthermore, any portion of the metal formed by the plating that extends beyond the surface of the photosensitive resist 403 is removed as appropriate by CMP (Chemical Mechanical Polishing) or the like, as needed.

[0069] Furthermore, in the wiring structure 400 shown in Figure 5, if a land electrode or wiring pattern is provided on either the surface where the wiring 407 is exposed or the surface of the first substrate 401, or both, the first via 406A is connected to the land electrode or wiring pattern. In other words, the first via 406A connects wirings from different layers. Also, if one end of the second via 406B is connected to a land electrode or wiring pattern provided on the surface of the first substrate 401, the second via 406B also connects wirings from different layers. Furthermore, considering the case where three or more wiring structures 400 shown in Figure 5 are stacked in the thickness direction to form an interposer, the first via 406A may connect wirings from different layers in the interposer in the following manner. For example, a land electrode or wiring pattern provided on the surface of another wiring structure 400 stacked below the wiring structure 400 on which the first via 406A is provided may be connected by the first via 406A to a land electrode or wiring pattern provided on the surface of yet another wiring structure 400 stacked above it.

[0070] [Effects, etc.] As described above, the pattern forming body 200 according to this embodiment is used to form a wiring structure 400 having wiring 407 and vias 406 that connect wiring of different layers.

[0071] The pattern-forming body 200 comprises at least a main body portion 201 made of a light-transmitting material, a pillar structure portion 202, and a light-shielding pattern 203.

[0072] The light-shielding pattern 203 is made of a light-shielding material and is provided on the first surface 201A of the main body 201. The pillar structure 202 protrudes from the second surface 201B of the main body 201, which is opposite the first surface 201A, and is composed of multiple pillars 202A made of a light-transmitting material.

[0073] The shape and arrangement of the light-shielding pattern 203, as viewed from a direction perpendicular to the first surface 201A, corresponds to the shape and arrangement of the wiring 407 in the wiring structure 400. The shape and arrangement of the pillar 202A in the pillar structure 202, as viewed from a direction perpendicular to the first surface 201A, corresponds to the shape and arrangement of the via 406 in the wiring structure 400.

[0074] By configuring the pattern forming body 200 in this way, multiple recesses can be formed in the insulating structure of the wiring structure 400 without creating multiple steps. Furthermore, since only the pillar structure 202, which is composed of multiple pillars 202A of the same height, is embedded inside the insulating structure, the release properties when demolding the pattern forming body 200 from the insulating structure can be improved. In addition, since the pattern forming body 200 can be formed by aligning the light-shielding pattern 203 and the pillar structure 202, the alignment accuracy between the wiring 407 and vias 406 formed in the wiring structure 400 can be improved, and defects in the shape and electrical characteristics of the wiring structure 400 can be reduced. As a result, the manufacturing yield of the wiring structure 400 and, consequently, the manufacturing cost can be reduced.

[0075] In the pattern-forming body 200, the light-transmitting material constituting the main body portion 201 and the pillar structure portion 202 is preferably quartz glass. Furthermore, the material of the light-shielding pattern 203 is preferably chromium.

[0076] By configuring the pattern-forming body 200 in this manner, the robustness and thermal stability of the main body 201 and the pillar structure 202 can be ensured. Furthermore, by using chromium as the material for the light-shielding pattern 203, high light-shielding performance against UV light can be achieved.

[0077] Furthermore, the second hard mask layer 306 may contain other substances that include unavoidable impurities, provided that this does not significantly impair the light-shielding properties and does not affect the yield of the wiring structure 400. Therefore, the second hard mask pattern 309 obtained by processing the second hard mask layer 306, i.e., the light-shielding pattern 203, may contain other substances that include unavoidable impurities. In other words, it is preferable that the light-shielding pattern 203 is mainly composed of chromium.

[0078] Preferably, the length of pillar 202A in the direction perpendicular to the first surface 201A is the sum of the thickness of the wiring 407 in the wiring structure 400 and the length of the second via 406B connected to the wiring 407 in the thickness direction. Furthermore, preferably, the length of pillar 202A in the direction perpendicular to the first surface 201A is the same as the length of the first via 406A in the wiring structure 400.

[0079] In this way, it becomes easier to adjust the length of the vias 406 in the wiring structure 400 to the design value.

[0080] Furthermore, the method for manufacturing the patterned body 200 according to this embodiment comprises at least the following steps.

[0081] A first hard mask layer 302 is formed on the back surface of a substrate 301 made of a light-transmitting material.

[0082] A first resist film 303 is formed on the first hard mask layer 302, and the first resist film 303 is processed to form a first resist pattern 304.

[0083] The first hard mask layer 302 is etched using the first resist pattern 304 as a mask to form the first hard mask pattern 305.

[0084] The substrate 301 is etched using the first hard mask pattern 305 as a mask to form a pillar structure 202 having a plurality of pillars 202A. The first resist pattern 304 may be removed before etching the substrate 301 or after etching the substrate 301. In this embodiment, the first hard mask pattern 305 is removed after etching the substrate 301.

[0085] Furthermore, a light-shielding pattern 203 made of a light-shielding material is formed on the surface of the substrate 301.

[0086] According to this embodiment, a pattern-forming body 200 can be obtained that can form recesses corresponding to multiple steps in the wiring structure 400 using a simple manufacturing process without creating multiple steps.

[0087] The process of forming the light-shielding pattern 203 may consist of the following steps.

[0088] A second hard mask layer 306 is formed on the surface of the substrate 301. A second resist film 307 is formed on the second hard mask layer 306, and the second resist film 307 is processed to form a second resist pattern 308. The second hard mask layer 306 is etched using the second resist pattern 308 as a mask to form a second hard mask pattern 309. The second resist pattern 308 is removed. In this case, the second hard mask pattern 309 becomes the light-shielding pattern 203.

[0089] By forming the light-shielding pattern 203 in this manner, the same equipment and methods used to form the first hard mask pattern 305 can be utilized, thereby suppressing an increase in the manufacturing cost of the patterned body 200.

[0090] Furthermore, the process of forming the light-shielding pattern 203 may consist of the following multiple steps.

[0091] A resist pattern having an opening pattern is formed on the surface of the substrate 301. A light-reflective material is formed on the surface of the substrate 301 through the opening pattern. Specifically, the light-reflective material is applied to the surface of the substrate 301 including the resist pattern. The light-reflective material is fixed to the surface of the substrate 301 as a light-shielding pattern 203. The resist pattern is removed.

[0092] Furthermore, the shape and arrangement of the opening pattern, as viewed from a direction perpendicular to the surface of the substrate 301, correspond to the shape and arrangement of the light-shielding pattern 203.

[0093] When forming the first hard mask layer 302 and the second hard mask layer 306, the method described above, i.e., the vapor deposition method, is generally used. However, vapor deposition equipment has a vacuum evacuation system, which increases the equipment cost. On the other hand, coating equipment for applying light-reflective material is less expensive than general vapor deposition equipment. In other words, the manufacturing cost when producing the light-shielding pattern 203 can be reduced.

[0094] Furthermore, in this embodiment, the second hard mask layer 306 is formed after the first hard mask layer 302 is formed, but the step of forming the second hard mask layer 306 may be performed before forming the first hard mask layer 302, or simultaneously with forming the first hard mask layer 302.

[0095] Alternatively, as shown in Figure 3A, the first hard mask layer 302 and the second hard mask layer 306 may be formed first, and then the first resist film 303 may be formed on the first hard mask layer 302.

[0096] Furthermore, the wiring structure 400 according to this embodiment includes a first base material 401, an insulating structure in which a first insulating layer and a second insulating layer are laminated, and wiring 407 and vias 406 provided on the insulating structure.

[0097] The second insulating layer is provided on the surface of the first substrate 401. The first insulating layer is provided on the surface of the second insulating layer. In addition, the side surface of the wiring 407 is in contact with the first insulating layer, and the via 406 is in contact with at least the second insulating layer. Specifically, the side surface of the first via 406A is in contact with both the first and second insulating layers. The side surface of the second via 406B is in contact with the second insulating layer.

[0098] The first insulating layer is a photocured product 403A of the photosensitive resist 403, and the second insulating layer is a thermocured product 402A of the non-photosensitive resist 402.

[0099] By configuring the wiring structure 400 in this way, the wiring 407 and vias 406 can be formed together, thereby improving the manufacturing yield of the wiring structure 400 and reducing defects in the shape and electrical characteristics of the wiring structure 400.

[0100] Furthermore, the manufacturing method of the wiring structure 400 according to this embodiment is carried out using the pattern forming body 200 and comprises at least the following steps.

[0101] After applying a non-photosensitive resist 402 to the surface of the first substrate 401, it is heated at a first temperature. After heating, a photosensitive resist 403 is applied to the surface of the non-photosensitive resist 402. After applying the photosensitive resist 403, the first substrate 401 is heated at a second temperature to reduce the fluidity of the non-photosensitive resist 402 and the photosensitive resist 403. With the viscosity of the non-photosensitive resist 402 reduced and the tip of the pillar 202A in contact with the photosensitive resist 403, the pattern forming body 200 is pressed toward the first substrate 401. By irradiating UV light from the first surface 201A of the pattern forming body 200, an uncured portion is formed in the photosensitive resist 403. After demolding the pattern forming body 200 from the photocured product 403A in which the non-photosensitive resist 402 and photosensitive resist 403 have hardened, the first substrate 401 is heated at a third temperature to fully cure the non-photosensitive resist 402. Following this, the uncured photosensitive resist 403 is removed by washing. Vias 406 and wiring 407 are formed simultaneously by plating in the recesses formed in the laminate of the photocured product 403A and the thermocured product 402A. Note that the full curing step of the non-photosensitive resist 402 may be performed after the removal of the uncured photosensitive resist 403.

[0102] In this way, vias 406 and wiring 407 can be formed simultaneously using a simple manufacturing process, thereby reducing the manufacturing cost of the wiring structure 400. Furthermore, recesses for forming wiring 407 and recesses for forming vias 406 can be formed on the first substrate 401 without changing the position of the pattern forming body 200. This improves the alignment accuracy of vias 406 and wiring 407, reducing defects in the shape and electrical characteristics of the wiring structure 400 having wiring 407 and vias 406 with micron-order dimensions. In addition, it reduces the manufacturing yield of the wiring structure 400, and consequently, the manufacturing cost.

[0103] Furthermore, since a portion of the photosensitive resist 403 is released from the pattern forming body 200 while it is still uncured, the area of ​​resist adhering to the pattern forming body 200 is reduced, thereby improving the release properties of the pattern forming body 200.

[0104] Furthermore, the non-photosensitive resist 402 and its thermosetting product 402A, and the photosensitive resist 403 and its photocured product 403A are all insulating materials. Therefore, reliable insulation can be achieved between multiple vias 406, between multiple wirings 407, and between vias 406 and wirings 407 that are spaced apart from each other.

[0105] Furthermore, by appropriately setting the thickness of the photocured material 403A, the thickness of the wiring 407 can be adjusted to the design value. Similarly, by appropriately setting the thickness of the non-photosensitive resist 402, the lengths of the first via 406A and the second via 406B can be adjusted to the design value.

[0106] (Second embodiment) Figure 6A is a schematic cross-sectional view of the patterned body according to the second embodiment. Figure 6B is a schematic view of the patterned body according to the second embodiment as seen from a direction perpendicular to the first surface. Figure 6C is a perspective view of the patterned body according to the second embodiment. Figure 7 is a schematic diagram illustrating the manufacturing process of the wiring structure according to the second embodiment.

[0107] The pattern forming body 600 shown in Figures 6A to 6C differs from the pattern forming body 200 shown in Figures 1A to 1C in that the shape of the light-shielding pattern 603 is as follows. The light-shielding pattern 603 has multiple opening patterns 603A, and the shape and arrangement of the opening patterns 603A viewed from a direction perpendicular to the first surface 601A corresponds to the shape and arrangement of the wiring 407 of the wiring structure 400 shown in Figure 5. The pattern forming body 600 is manufactured in the same way as the pattern forming body 200, following the procedure shown in Figures 2A and 2B.

[0108] By configuring the pattern forming body 600 in this way, it is possible to accommodate the case where the photosensitive resist 403 used in the manufacture of the wiring structure 400 is a positive-type insulating resist. A positive-type resist is a resist whose solubility in the developer increases when exposed to light. In other words, the parts irradiated with UV light remain uncured, and these uncured parts are removed by washing with the developer.

[0109] Therefore, the manufacturing method of the wiring structure 400 shown in Figure 7 differs from the manufacturing method of the wiring structure 400 shown in Figure 4 in the following respects.

[0110] In the UV imprint process, when UV light 404 is irradiated from above the photosensitive resist 403, the photosensitive resist 403 located directly below the light-shielding pattern 603 is not irradiated with UV light. This portion of the photosensitive resist 403 changes into a thermoset product 403B during the subsequent main curing treatment of the non-photosensitive resist 402. The heating temperature at this time is the same as described above, and is generally around 100°C to 200°C. On the other hand, the photosensitive resist 403 located directly below the aperture pattern 603A is irradiated with UV light and remains uncured.

[0111] Therefore, if the uncured resist is removed either before or after the non-photosensitive resist 402 and photosensitive resist 403 are fully cured after the pattern forming body 600 has been demolded, the photosensitive resist 403 located directly beneath the light-shielding pattern 603 will be removed. As a result, recesses are formed in the insulating structure at positions corresponding to the wiring 407, and the wiring 407 and vias 406 can be formed together in the subsequent plating process.

[0112] In other words, according to this embodiment, the same effects as those achieved by the configuration and method shown in the first embodiment can be achieved. Specifically, multiple recesses can be formed in the insulating structure of the wiring structure 400 without creating multiple steps. Furthermore, the release properties when demolding the pattern forming body 600 from the insulating structure can be improved. In addition, the alignment accuracy between the wiring 407 and vias 406 formed on the wiring structure 400 can be improved, reducing defects in the shape and electrical characteristics of the wiring structure 400. As a result, the manufacturing yield of the wiring structure 400, and consequently the manufacturing cost, can be reduced.

[0113] Furthermore, without creating multiple steps, a pattern-forming body 600 can be obtained that can form recesses corresponding to multiple steps in the wiring structure 400 using a simple manufacturing process.

[0114] Furthermore, since the vias 406 and wiring 407 can be formed together using a simple manufacturing process, the manufacturing cost of the wiring structure 400 can be reduced.

[0115] (Third embodiment) Figure 8A is a schematic cross-sectional view of the pattern-forming body according to the third embodiment. Figure 8B is a schematic view of the pattern-forming body according to the third embodiment as seen from a direction perpendicular to the first surface. Figure 8C is a perspective view of the pattern-forming body according to the third embodiment.

[0116] Figure 9A is a schematic diagram illustrating the manufacturing process of a patterned body according to the third embodiment. Figure 9B is a schematic diagram illustrating the subsequent manufacturing process shown in Figure 9A. Figure 10 is a schematic diagram illustrating the manufacturing process of a wiring structure according to the third embodiment.

[0117] The pattern forming body 700 shown in Figures 8A to 8C differs from the pattern forming body 200 shown in Figures 1A to 1C in that a first hard mask pattern 704 made of light-shielding material is provided at the tip of the pillar 702A.

[0118] The pattern-forming body 700 is manufactured using the same procedure as the pattern-forming body 200. However, as shown in Figures 9A and 9B, after etching the substrate 301, the first hard mask pattern 704 is left on the tip of the pillar 702A, and the subsequent steps are carried out. In addition, the first hard mask layer 302 in this embodiment must be a light-shielding material.

[0119] Furthermore, the manufacturing method of the wiring structure 400 shown in Figure 10 differs from the manufacturing method of the wiring structure 400 shown in Figure 4 in the following respects.

[0120] First, a photosensitive resist 405 is applied to the surface of the first substrate 401, and then a non-photosensitive resist 402 is applied. It is preferable to pre-bake the photosensitive resist 405 before applying the non-photosensitive resist 402 to reduce its fluidity. Depending on the type and viscosity of the photosensitive resist 405, as well as the performance of the coating apparatus, it is preferable that the film thickness of the photosensitive resist 405 be the same as or thinner than the film thickness of the non-photosensitive resist 402 and the photosensitive resist 403.

[0121] Furthermore, by applying a photosensitive resist 405 to the surface of the first substrate 401, irregularities, undulations, and warping that occur on the surface of the first substrate 401 can be mitigated. Moreover, by applying the photosensitive resist 405 to the surface of the first substrate 401 before applying the non-photosensitive resist 402, the irregularities that occur on the surface of the first substrate 401 can be filled in, and the surface of the photosensitive resist 405 can be made flat. As a result, the film thickness of the non-photosensitive resist 402 and the photosensitive resist 403 is stabilized, and the tip of the pillar 702A of the pattern forming body 700 can be reliably penetrated into the non-photosensitive resist 402. From this viewpoint, the film thickness of the photosensitive resist 405 is preferably about 1.3 times the height of the aforementioned irregularities, and in a practical range, the film thickness of the photosensitive resist 405 is preferably 2 μm or less.

[0122] Furthermore, in the UV imprint process, if UV light 404 is irradiated from above the photosensitive resist 403, the photosensitive resist 403 located directly beneath the light-shielding pattern 703 will not be irradiated with UV light and will remain uncured, as described in the first embodiment.

[0123] Furthermore, in this case, the UV light that passes through the main body 701 and propagates to the pillar 702A is blocked by the first hard mask pattern 704. Therefore, the photosensitive resist 405 located directly beneath the first hard mask pattern 704 also remains uncured.

[0124] In other words, when viewed from a direction perpendicular to the first surface 701A of the pattern forming body 700, the parts of the photosensitive resists 403 and 405 that are not covered by the light-shielding pattern 703 and the first hard mask pattern 704 are cured by irradiation with UV light and transformed into photocured products 403A and 405A, respectively. On the other hand, the areas covered by the light-shielding pattern 703 or the first hard mask pattern 704 remain uncured.

[0125] The pattern-forming body 700 is demolded, and an uncured resist removal process is performed either before or after the main curing of the non-photosensitive resist 402. This removal process removes the photosensitive resist 403 located directly beneath the light-shielding pattern 603 and the photosensitive resist 405 located directly beneath the first hard mask pattern 704. With the removal of the photosensitive resist 403, recesses are formed in the insulating structure at positions corresponding to the wiring 407, allowing the wiring 407 and vias 406 to be formed collectively in the subsequent plating process.

[0126] Furthermore, by removing the photosensitive resist 405 located directly beneath the first hard mask pattern 704, residual resist film remaining between the tip of the pillar 702A and the first substrate 401 before demolding, such as residual non-photosensitive resist 402, can be easily removed. The residual non-photosensitive resist 402 is lifted off and removed simultaneously with the removal of the photosensitive resist 405. In addition, the residual film may be reliably removed by wet cleaning, dry etching, or organic cleaning using an organic solution.

[0127] In other words, according to this embodiment, the same effects as those achieved by the configuration and method shown in the first embodiment can be achieved. Specifically, multiple recesses can be formed in the insulating structure of the wiring structure 400 without creating multiple steps. Furthermore, the release properties when demolding the pattern forming body 700 from the insulating structure can be improved. In addition, the alignment accuracy between the wiring 407 and vias 406 formed on the wiring structure 400 can be improved, reducing defects in the shape and electrical characteristics of the wiring structure 400. As a result, the manufacturing yield of the wiring structure 400, and consequently the manufacturing cost, can be reduced.

[0128] Furthermore, without creating multiple steps, a pattern-forming body 700 can be obtained that can form recesses corresponding to multiple steps in the wiring structure 400 using a simple manufacturing process.

[0129] Furthermore, since the vias 406 and wiring 407 can be formed together using a simple manufacturing process, the manufacturing cost of the wiring structure 400 can be reduced.

[0130] Furthermore, according to this embodiment, residual resist film remaining between the tip of the pillar 702A and the first substrate 401 before demolding can be easily and reliably removed. This prevents the interposition of an insulator between the first substrate 401 and the via 406, resulting in good electrical connection between the via 406 and the wiring connected to the via 406, thereby suppressing the occurrence of electrical performance defects. For example, if the first substrate 401 is a substrate having electrodes such as a TGV (Through Glass Vias) substrate, the electrical connection between the electrodes provided on the TGV substrate and the via 406 will be good, reducing electrical performance defects of the TGV substrate including the wiring structure 400. Electrical reliability can also be improved.

[0131] (Other embodiments) In addition, in the first to third embodiments, even when the material of the substrate 301 is a light-transmitting resin, the patterned body 200 can be formed in the same manner as shown in Figures 2A, 2B, 3A, 3B, 9A, and 9B. However, the patterned body 200 can also be formed by the method described below.

[0132] Figure 11 is a schematic diagram illustrating the manufacturing process of another patterned body.

[0133] First, a mold template 900 for resin molding is prepared (a: preparation of mold template). The template 900 is a component in which a hole pattern section 902 is provided on the surface of a substrate 901. The hole pattern section 902 is a mold in which a plurality of through-holes 902A are provided in a predetermined arrangement. Viewed along the extending direction of the through-holes 902A, the shape and arrangement of the plurality of through-holes 902A correspond to the shape and arrangement of vias 406 in the wiring structure 400.

[0134] Next, the light-transmitting resin 200A is dropped onto the hole pattern portion 902 of the master plate 900 (b: resin dropping), and the light-transmitting resin 200A is cured to form the prototype 200B of the pattern forming body 200. In the example shown in Figure 11, since the light-transmitting resin 200A is made of a photocurable material, the light-transmitting resin 200A is cured by irradiation with UV light (c: UV curing). However, this is not particularly limited, and for example, if the light-transmitting resin 200A is a thermosetting material, the light-transmitting resin 200A including the master plate 900 is heated to heat-cur the light-transmitting resin 200A.

[0135] Next, the prototype 200B is released from the original plate 900 (d: release from original plate), and a light-shielding pattern 203 is formed on the first surface of the prototype 200B to obtain the pattern-forming body 200 (e: completion of pattern-forming body).

[0136] Although Figure 11 does not show the details of the method for forming the light-shielding pattern 203, the light-shielding pattern 203 is formed in the same manner as shown in the first embodiment. That is, the light-shielding pattern 203 is obtained by either forming the second hard mask pattern 309 or by fixing the light-reflective material to the first surface of the prototype 200B.

[0137] In addition, in the original plate 900, instead of the substrate 901, the hole pattern portion 902 may be placed on a substrate made of light-transmitting resin. In this case, the light-transmitting resin 200A is filled up to the upper end of the through-hole 902A and not overflowed. Furthermore, during the curing of the light-transmitting resin 200A, or after the curing of the light-transmitting resin 200A and before demolding the prototype 200B from the original plate 900, the aforementioned substrate and the light-transmitting resin 200A or prototype 200B are joined together. The joining method may be thermal bonding or other methods.

[0138] Furthermore, new embodiments can be created by appropriately combining the components shown in the first to third embodiments, including the example shown in Figure 11. For example, the light-shielding pattern 603 shown in Figures 6A to 6C may be applied to the pattern-forming body 200 shown in Figure 11. [Industrial applicability]

[0139] The patterned body of this disclosure can be easily manufactured and processed to produce wiring structures having wiring and vias, and is useful, for example, in manufacturing an interposer having a multilayer wiring structure. [Explanation of Symbols]

[0140] 200, 600, 700 pattern makers 200A light transmitting resin 200B Pattern-forming prototype 201, 601, 701 Main Unit 201A, 601A, 701A 1st page 201B, 601B, 701B 2nd side 202, 602, 702 Pillar structure 202A, 602A, 702A Pillar 203, 603, 703 Light-blocking patterns (second hard mask patterns) 301 Base material 302 First hard mask layer 303 First resist film 304 First Resist Pattern 305 First Hard Mask Pattern 306 Second hard mask layer 307 Second resist film 308 Second Resist Pattern 309 Second Hard Mask Pattern 400 Wiring structure 401 1st base material 402 Non-photosensitive resist 403, 405 Photosensitive Resist 404, 604, 804, 904 UV light 403A, 405A photocured product 402A, 403B thermoset 406 Via 406A Via No. 1 (Via) 406B Second Via (Via) 407 Wiring 704 First Hard Mask Pattern 900 Original version 901 circuit board 902 Hole pattern section 902A Through-hole

Claims

1. A pattern forming body used to form a wiring structure having wiring and vias connecting the wiring of different layers, The main body is made of a light-transmitting material, It consists of a light-shielding material, and a light-shielding pattern is provided on the first surface of the main body, The present invention comprises at least a pillar structure which protrudes from a second surface of the main body facing the first surface and is composed of a plurality of pillars made of the light-transmitting material, The shape and arrangement of the light-shielding pattern, as viewed from a direction perpendicular to the first surface, corresponds to the shape and arrangement of the wiring. A pattern-forming body characterized in that the shape and arrangement of the plurality of pillars, as viewed from a direction perpendicular to the first surface, correspond to the shape and arrangement of the vias.

2. In the pattern-forming body according to claim 1, The aforementioned light-transmitting material is quartz glass. The pattern forming body is characterized in that the light-shielding pattern is mainly composed of chromium.

3. In the pattern-forming body according to claim 1, A pattern forming body characterized in that the length of the pillar in the direction perpendicular to the first surface is the sum of the thickness of the second layer of wiring in the wiring structure and the length of the via connected to the second layer of wiring in the thickness direction of the wiring.

4. In the pattern-forming body according to claim 1, A pattern-forming body characterized in that a first hard mask pattern made of a light-shielding material is provided at the tip of the pillar.

5. A method for manufacturing a pattern forming body used to form a wiring structure having wiring and vias connecting the wiring in different layers, A step of forming a first hard mask layer on the back surface of a substrate made of a light-transmitting material, A step of forming a first resist film on the first hard mask layer, and processing the first resist film to form a first resist pattern, A step of etching the first hard mask layer using the first resist pattern as a mask to form the first hard mask pattern, A step of etching the substrate using the first hard mask pattern as a mask to form a pillar structure having a plurality of pillars, A method for manufacturing a patterned body, comprising at least the step of forming a light-shielding pattern made of a light-shielding material on the surface of the substrate.

6. In the method for manufacturing a patterned body according to claim 5, The step of forming the light-shielding pattern is: A step of forming a second hard mask layer on the surface of the substrate, A step of forming a second resist film on the second hard mask layer, and processing the second resist film to form a second resist pattern, The process involves etching the second hard mask layer using the second resist pattern as a mask to form a second hard mask pattern, The step of removing the second resist pattern is included, A method for manufacturing a patterned body, characterized in that the second hard mask pattern is the light-shielding pattern.

7. In the method for manufacturing a patterned body according to claim 5, The step of forming the light-shielding pattern is: A step of forming a resist pattern having an opening pattern on the surface of the substrate, A step of forming a light-reflective material on the surface of the substrate via at least the aperture pattern, The process includes at least the step of fixing the light-reflecting material to the surface of the substrate as the light-shielding pattern, A method for manufacturing a patterned body, characterized in that the shape and arrangement of the opening pattern, as viewed from a direction perpendicular to the surface of the substrate, corresponds to the shape and arrangement of the light-shielding pattern.

8. In the method for manufacturing a patterned body according to claim 5, The first hard mask layer is made of the light-shielding material, A method for manufacturing a patterned body, characterized by leaving the first hard mask pattern on the tip of the pillar.

9. First substrate and An insulating structure in which a first insulating layer and a second insulating layer are laminated, The insulating structure comprises wiring and vias, The second insulating layer is provided on the surface of the first substrate. The first insulating layer is provided on the surface of the second insulating layer. The side surface of the wiring is in contact with the first insulating layer. The side surface of the via is in contact with at least the second insulating layer. The first insulating layer is a cured product of a photosensitive material, The wiring structure is characterized in that the second insulating layer is a cured product of a non-photosensitive material.

10. A method for manufacturing a wiring structure using a pattern forming body according to any one of claims 1 to 4, The process involves applying a non-photosensitive resist to the surface of a first substrate, and then heating it at a first temperature. A step of applying a photosensitive resist to the surface of the non-photosensitive resist after heating, After applying the photosensitive resist, the first substrate is heated at a second temperature to reduce the fluidity of the non-photosensitive resist and the photosensitive resist. A step of reducing the fluidity of the non-photosensitive resist and pressing the pattern forming body toward the first substrate while the tip of the pillar is in contact with the photosensitive resist, A step of forming an uncured portion in the photosensitive resist by irradiating UV light from the first surface of the pattern forming body, A step of releasing the patterned body from the non-photosensitive resist and the photosensitive resist, A step of removing the uncured photosensitive resist by washing, After performing the demolding step for the patterned body, or after performing the removal step for the uncured photosensitive resist, the first substrate is heated at a third temperature to fully cure at least the non-photosensitive resist, A method for manufacturing a wiring structure, comprising the step of forming the vias and the wiring in a single step by plating recesses formed in a laminate of a cured product of the photosensitive resist and the cured product of the non-photosensitive resist.

11. In the method for manufacturing a wiring structure according to claim 10, A method for manufacturing a wiring structure, characterized in that the non-photosensitive resist and the photosensitive resist are both insulating materials.

12. In the method for manufacturing a wiring structure according to claim 10, A first hard mask pattern made of light-shielding material is provided at the tip of the pillar. The process further includes applying the photosensitive resist to the surface of the first substrate before applying the non-photosensitive resist, A method for manufacturing a wiring structure, characterized in that, when viewed from a direction perpendicular to the first surface, of the photosensitive resist provided between the first substrate and the non-photosensitive resist, the portion not covered by the light-shielding pattern and the first hard mask pattern is cured by irradiation with UV light, and the portion covered by the light-shielding pattern and the first hard mask pattern remains uncured.

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