Retaining member

Abstract

This suppresses variations in the physical properties of the resistor formed inside the retaining member. [Solution] The holding member 10 is made of an insulator and comprises a main body 11 having a first surface 10A and a second surface 10B located on the opposite side of the first surface 10A, a plurality of resistors 50 formed inside the main body 11 divided into a plurality of zones 12, and an electrode portion 60 located near the resistors 50 in a first direction perpendicular to the first surface 10A. A layered region extending parallel to the first surface 10A, including the electrode portion 60 and a part of the insulator, is defined as the electrode region 70, and a portion of the electrode region 70 corresponding to one zone 12 is defined as the electrode zone region 71. When the electrode zone region 71 is divided into a plurality of divided regions 72, and a plurality of divided regions 72 are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portion 60 within one divided region 72 to the area of ​​one divided region 72 when viewed from the first direction, and the electrode ratio of each of the plurality of divided regions 72 falls within a predetermined range.

Description

Technical Field

[0001] The present disclosure relates to a holding member.

Background Art

[0002] As a holding device for holding a wafer when manufacturing a semiconductor, an electrostatic chuck described in Japanese Patent No. 6571880 (hereinafter referred to as Patent Document 1) is known. This electrostatic chuck includes a ceramic plate, a heating resistor provided inside the ceramic plate, and a driver for the heating resistor that constitutes a power supply path for the heating resistor. The upper surface of the ceramic plate is an adsorption surface for adsorbing a wafer. The ceramic plate is partitioned into a plurality of segments in a direction parallel to the adsorption surface. A heating resistor is arranged in each segment.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the holding device as described above, when the heating resistor is arranged close to the layer provided with the driver for the heating resistor in the vertical direction, the formation conditions of the heating resistor may be different between the portion of the heating resistor that overlaps with the driver for the heating resistor and the portion that does not overlap with the driver for the heating resistor (that is, the portion that overlaps with the ceramic). The formation conditions referred to here include, for example, the degree of shrinkage during firing and the state of volatilization of the organic solvent. As a result, in one heating resistor within one segment, physical properties such as resistivity may become non-uniform, and there is a possibility of temperature deviation within one segment. 6]

[0005] This disclosure was completed based on the circumstances described above, and aims to suppress variations in the physical properties of the resistor formed inside the retaining member. [Means for solving the problem]

[0006] The retaining member of this disclosure comprises a main body made of an insulator and having a first surface and a second surface disposed on the opposite side of the first surface; a plurality of resistors formed inside the main body in a plurality of zones; and an electrode portion disposed near the resistors in a first direction perpendicular to the first surface. The retaining member comprises a layered region extending parallel to the first surface, including the electrode portion and a part of the insulator, which is defined as the electrode region, and a portion of the electrode region corresponding to one of the zones is defined as the electrode zone region. When the electrode zone region is divided into a plurality of division regions, and a plurality of division regions are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portion in one of the division regions to the area of ​​one of the division regions when viewed from the first direction, and the electrode ratio of each of the plurality of division regions falls within a predetermined range. [Effects of the Invention]

[0007] According to this disclosure, it is possible to suppress variations in the physical properties of the resistor formed inside the holding member. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic perspective view showing the external configuration of the electrostatic chuck according to Embodiment 1. [Figure 2] Figure 2 is a schematic cross-sectional view of an electrostatic chuck. [Figure 3] Figure 3 is a plan view of the electrode region. [Figure 4] Figure 4 is a plan view of the electrode zone region. [Figure 5] Figure 5 is a schematic cross-sectional view of the electrostatic chuck according to Embodiment 2. [Figure 6] Figure 6 is a schematic cross-sectional view of the electrostatic chuck according to Embodiment 3. [Figure 7] Figure 7 is a schematic cross-sectional view of the electrostatic chuck according to Embodiment 4. [Modes for carrying out the invention]

[0009] [Description of Embodiments in this Disclosure] First, embodiments of this disclosure will be listed and described. (1) The holding member of the present disclosure comprises a main body made of an insulator and having a first surface and a second surface disposed on the opposite side of the first surface, a plurality of resistors formed inside the main body in a plurality of zones, and an electrode portion disposed near the resistors in a first direction perpendicular to the first surface, wherein a layered region extending parallel to the first surface, including the electrode portion and a part of the insulator, is defined as an electrode region, and a portion of the electrode region corresponding to one of the zones is defined as an electrode zone region, and when the electrode zone region is divided into a plurality of division regions and a plurality of division regions are set, the electrode ratio of each of the plurality of division regions is defined as the electrode ratio, and the electrode ratio of each of the plurality of division regions is within a predetermined range.

[0010] With this configuration, the electrode ratio between the divided regions falls within a predetermined range, making it easier to homogenize the resistivity formation conditions within a single zone. Therefore, it becomes easier to suppress variations in physical properties, such as resistivity, within each resistor formed in each zone.

[0011] (2) In the holding member described in (1), the electrode ratio may be 90% or less.

[0012] (3) In the holding member described in (1) or (2), the electrode portion is preferably a driver that is electrically connected to the resistor.

[0013] With this configuration, by bringing the resistor driver closer in the first direction, it becomes easier to miniaturize the retaining member in the first direction.

[0014] (4) In the holding member according to any one of (1) to (3), it is preferable that the electrode portion includes a first electrode portion disposed on one side of the resistor in the first direction and a second electrode portion disposed on the other side of the resistor in the first direction.

[0015] According to such a configuration, since the area of the electrode portion can be adjusted on one side and the other side in the first direction, it becomes easier to make the electrode rates between the divided regions closer.

[0016] (5) The holding member according to any one of (1) to (4) further includes a high-frequency electrode formed inside the main body portion and a driver for the high-frequency electrode formed inside the main body portion and electrically connected to the high-frequency electrode. The driver for the high-frequency electrode may be disposed near the resistor in the first direction.

[0017] (6) In the holding member according to (5), it is preferable that the driver for the high-frequency electrode is included in the electrode portion.

[0018] According to such a configuration, a part of the conductive layer included in the electrode portion can be effectively utilized as a driver for the high-frequency electrode.

[0019] [Details of Embodiment 1 of the Present Disclosure] A specific example of Embodiment 1 of the present disclosure will be described while referring to FIGS. 1 to 4. Note that the present disclosure is not limited to these examples, and is shown by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims. In the following description, for a plurality of identical members, only some members may be labeled with reference numerals, and the reference numerals of other members may be omitted. In this specification, the positive direction of the Z axis is the upward direction, the negative direction of the Z axis is the downward direction, and the XY plane direction is the horizontal direction. The configurations of the holding member and the holding device will be described, but in the actual usage mode of the holding member and the holding device, they may be arranged differently. Also, in this specification, "orthogonal" and "parallel" include arrangements in a manner that are substantially recognized as orthogonal and parallel.

[0020] <Electrostatic chuck> The holding device including the holding member 10 of the present disclosure is an electrostatic chuck 1 that can adsorb and hold an object such as a semiconductor wafer or a glass substrate (hereinafter referred to as "wafer W"). The electrostatic chuck 1 is attached to a processing chamber of a semiconductor manufacturing apparatus (not shown), for example, and is used to perform various processes (film formation, etching, etc.) on the wafer W using plasma.

[0021] As shown in FIG. 1, the electrostatic chuck 1 includes a holding member 10 and a base member 20. The holding member 10 and the base member 20 are joined by a joining portion 30. The joining portion 30 is formed of an adhesive such as a silicone-based resin, an acrylic-based resin, or an epoxy-based resin, for example. The electrostatic chuck 1 is configured to be able to adsorb and hold the wafer W by electrostatic attraction.

[0022] The base member 20 is a disk-shaped member and can be formed into a shape having a diameter of about 340 mm and a thickness of about 35 mm, for example. The material mainly forming the base member 20 is a conductive material such as aluminum or an aluminum alloy. Here, the "material mainly forming" means the main component and means the material having the highest content ratio (weight ratio) (the same applies hereinafter). As shown in FIG. 2, the upper surface 20A of the base member 20 is disposed on the side of the holding member 10. The upper surface 20A of the base member 20 is joined to the second surface 10B of the holding member 10 described later by the joining portion 30.

[0023] A refrigerant flow path 21 is provided inside the base member 20. The refrigerant flow path 21 is connected to a refrigerant circulation device (not shown). The refrigerant circulation device is configured to be able to circulate a refrigerant such as a fluorine-based inert liquid or water through the refrigerant flow path 21. When the refrigerant flows through the refrigerant flow path 21, the base member 20 is cooled, and the holding member 10 is cooled by heat transfer (heat extraction) between the base member 20 and the holding member 10 through the joining portion 30, and the wafer W held on the first surface 10A of the holding member 10 described later is cooled. Thereby, the temperature of the wafer W can be controlled.

[0024] <Retaining member> The holding member 10 is generally disc-shaped and can be formed into a shape with, for example, a diameter of about 300 mm and a thickness of about 5 mm. The holding member 10 comprises a main body 11 made of an insulator, a chuck electrode 40 formed inside the main body 11, a plurality of resistors 50, and an electrode portion 60. The main material forming the main body 11 is, for example, a ceramic such as aluminum nitride (AlN) or alumina (Al2O3). The upper surface of the main body 11 is the first surface 10A. The first surface 10A is perpendicular to the Z-axis direction (an example of a first direction). The first surface 10A is a circular plane and functions as a surface for holding the wafer W. The second surface 10B, which is located on the opposite side of the main body 11 from the first surface 10A, is joined to the base member 20 via a joint 30.

[0025] The chuck electrode 40 is made of a conductive material (for example, tungsten, molybdenum, platinum, etc.). The shape of the chuck electrode 40 in a view along the Z-axis is, for example, approximately circular. When a voltage is applied to the chuck electrode 40 from a power source (not shown), an electrostatic attraction is generated, and this electrostatic attraction causes the wafer W to be attracted and fixed to the first surface 10A of the holding member 10.

[0026] <resistor> Multiple resistors 50 are formed from a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The main body 11 is divided into multiple zones 12 when viewed in the Z-axis direction, and one resistor 50 is placed in each zone 12. The outer peripheral edge of the main body 11, which is located outside the multiple zones 12, is a non-formed zone 13 where no resistors 50 are placed. The resistors 50 are shaped to pass through each position within each zone 12 as evenly as possible when viewed in the Z-axis direction. The resistors 50 are thin wire-like and are formed to meander within each zone 12. The resistors 50 are, for example, heaters or resistance thermometers for measuring temperature.

[0027] <Electrode part> The electrode portion 60 is formed of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The electrode portion 60 is positioned near the resistor 50 in the Z-axis direction. More specifically, the electrode portion 60 is positioned closest to the resistor 50 among the conductive layers arranged above and below the resistor 50, excluding vias 51 and the like that are directly connected to the resistor 50. More specifically, the electrode portion 60 is a conductive layer positioned approximately 0.2 to 0.8 mm away from the resistor 50 in the Z-axis direction. In this embodiment, the electrode portion 60 is located below the resistor 50.

[0028] In this embodiment, the electrode portion 60 is a driver electrically connected to the resistor 50. One end of the electrode portion 60 is connected to a pad portion provided at the end of the resistor 50 via a via 51. The other end of the electrode portion 60 is connected to a terminal 14 via a via 61. The terminal 14 is housed in a terminal hole 22 provided in the electrostatic chuck 1. The terminal hole 22 is formed extending in the Z-axis direction from the lower surface 20B of the base member 20 to the inside of the holding member 10. The terminal 14 is connected to a power supply (not shown).

[0029] The holding member 10 can be manufactured by creating multiple green sheets made of ceramics, processing a predetermined green sheet by forming via holes, filling it with metallizing paste, printing, etc., heat-pressing these green sheets together, cutting or other processing, and then firing them.

[0030] <Electrode area, electrode zone area, divided area> Here, the layered region extending parallel to the first surface 10A, including the electrode portion 60 and a part of the insulator, is defined as the electrode region 70. Furthermore, as shown in Figure 3, the portion of the electrode region 70 corresponding to one zone 12 is defined as the electrode zone region 71.

[0031] <Split area> Furthermore, as shown in Figure 4, the regions obtained by dividing the electrode zone region 71 into multiple parts are defined as divided regions 72. In Figure 4, the electrode zone region 71 located in the upper left of Figure 3 is divided into four parts. When dividing the electrode zone region 71 into multiple parts, priority is given to dividing it in the radial direction (concentric circles). It is preferable to suppress variations within the circumferential region of the electrode zone region 71. Furthermore, it is preferable that the multiple divided regions 72 be set so that their areas in the Z-axis direction are approximately the same. It is preferable that the area of ​​one divided region 72 be equally divided into 2 to 50% areas of the electrode zone region 71. Also, it is preferable that the multiple divided regions 72 be arranged approximately symmetrically to each other in the horizontal direction.

[0032] <Electrode ratio> Here, the electrode ratio is defined as the ratio of the area of ​​the electrode portion 60 within a divided region 72 to the area of ​​that divided region 72 in a view along the Z-axis. In other words, the electrode ratio is the proportion of the portion of a divided region 72 demarcated by a dashed line in Figure 4 that is occupied by the shaded electrode portion 60. The electrode ratio of each of the multiple divided regions 72 is set to fall within a predetermined range. For example, the predetermined range is preferably 30% or less, and more preferably 20% or less. For example, if the four divided regions 72 in Figure 4 are distinguished as 72A, 72B, 72C, and 72D, the electrode ratios of divided regions 72A, 72B, 72C, and 72D are 62.5%, 72.9%, 64.5%, and 72.1%, respectively, which fall within the 20% range. Although not described in detail, the electrode zone regions 71 other than the electrode zone region 71 shown in Figure 4 are also configured so that the electrode ratio of the divided region 72 falls within a predetermined range.

[0033] The resistor 50 comprises an overlapping portion arranged in the Z-axis direction superimposed on the electrode portion 60, and a non-overlapping portion arranged in the Z-axis direction superimposed on the insulator (main body portion 11). Since the resistor 50 is arranged as evenly as possible within each zone 12, the ratio of the overlapping portion to the resistor 50 in the portion of the zone 12 corresponding to each divided region 72 is considered to be approximately equal to the electrode ratio. In this embodiment, since the electrode ratios of the multiple divided regions 72 fall within a predetermined range, the ratio of the overlapping portion of the resistor 50 in the portion of the zone 12 corresponding to each divided region 72 falls within a predetermined range.

[0034] In the manufacturing process of the holding member 10, when the green sheet laminate is fired, it is conceivable that the formation conditions for the resistor 50 differ between the printed layer of the metallized paste that forms the resistor 50, specifically the portion that overlaps with the printed layer of the metallized paste that forms the electrode portion 60 in the Z-axis direction, and the portion that overlaps with the insulator in the Z-axis direction. Formation conditions include, for example, the degree of shrinkage of the metallized paste and the state of volatilization of the organic solvent in the metallized paste.

[0035] In this embodiment, since the proportion of the superimposed portion of the resistor 50 in the zone 12 corresponding to each divided region 72 falls within a predetermined range, it becomes easier to make the formation conditions substantially the same at each position within the zone 12. Therefore, the physical properties of the resistor 50, such as resistivity, are less likely to vary within the zone 12. As a result, the functionality of the resistor 50 in the holding member 10 can be improved. For example, if the resistor 50 is a heater, the temperature distribution within each zone 12 can be reduced. For example, if the resistor 50 is a resistance thermometer, the accuracy of temperature measurement within each zone 12 can be improved.

[0036] On the other hand, unlike in this embodiment, if the electrode ratio of the divided region does not fall within a predetermined range, multiple regions with different resistor formation conditions may be created within a single zone, and the physical properties of the resistor may vary among these multiple regions. Therefore, the functionality of the resistor may not be fully realized.

[0037] The electrode density may be 90% or less. Furthermore, the average electrode density may differ between different electrode zone regions 71. For example, the average electrode density in the electrode zone region 71 shown in Figure 4 is 68.0%, but the average electrode density in other electrode zone regions 71 does not have to be 68.0%.

[0038] <Effects of Embodiment 1> As described above, the holding member 10 of Embodiment 1 comprises a main body 11 made of an insulator and having a first surface 10A and a second surface 10B located on the opposite side of the first surface 10A; a plurality of resistors 50 formed inside the main body 11, divided into a plurality of zones 12; and an electrode portion 60 located near the resistors 50 in a first direction (Z-axis direction) perpendicular to the first surface 10A. A layered region extending parallel to the first surface 10A, including the electrode portion 60 and a part of the insulator, is defined as the electrode region 70, and a portion of the electrode region 70 corresponding to one zone 12 is defined as the electrode zone region 71. When the electrode zone region 71 is divided into a plurality of divided regions 72, and a plurality of divided regions 72 are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portion 60 within one divided region 72 to the area of ​​one divided region 72 when viewed from the first direction, and the electrode ratio of each of the plurality of divided regions 72 falls within a predetermined range.

[0039] With this configuration, the electrode ratios between the divided regions 72 fall within a predetermined range, making it easier to homogenize the formation conditions of the resistor 50 within a single zone 12. Therefore, it becomes easier to suppress variations in physical properties, such as resistivity, within each resistor 50 formed in each zone 12.

[0040] In Embodiment 1, the electrode ratio may be 90% or less.

[0041] In Embodiment 1, the electrode portion 60 is a driver that is electrically connected to the resistor 50.

[0042] With this configuration, by bringing the driver of the resistor 50 closer in the first direction, it becomes easier to miniaturize the holding member 10 in the first direction.

[0043] [Details of Embodiment 2 of this Disclosure] A specific example of Embodiment 2 of this disclosure will be described with reference to Figure 5. Components similar to those in Embodiment 1 will be denoted by the same reference numerals as in Embodiment 1, and their description may be omitted.

[0044] The electrostatic chuck 101 of Embodiment 2 includes a holding member 110. The electrode portion 160 of the holding member 110 includes a first electrode portion 160A positioned above the resistor 50 and a second electrode portion 160B positioned below the resistor 50. According to this embodiment, since the electrode portion 160 has two conductive layers, the design freedom of the electrode portion 160 is improved compared to Embodiment 1. Therefore, it becomes easier to appropriately adjust the electrode ratio.

[0045] The first electrode portion 160A and the second electrode portion 160B may be arranged so that they do not overlap each other in the Z-axis direction. With this configuration, the resistor 50 will overlap with either the first electrode portion 160A or the second electrode portion 160B on only one side in the Z-axis direction, and will not be positioned between the electrode portions 160 from both sides in the Z-axis direction. Therefore, the electrode ratio can be calculated in substantially the same manner as in Embodiment 1, and variations in the formation conditions due to the position of the resistor 50 can be reduced.

[0046] Furthermore, the first electrode portion 160A and the second electrode portion 160B may have portions that overlap each other in the Z-axis direction. However, the formation conditions of the resistor 50 may differ between the portion of the resistor 50 that is sandwiched between the electrode portions 160 on both sides in the Z-axis direction and the portion that overlaps with the electrode portion 160 on only one side in the Z-axis direction. In this case, it is preferable that the electrode ratios in the portions where the first electrode portion 160A and the second electrode portion 160B overlap in each divided region 72 are approximately the same.

[0047] <Effects of Embodiment 2> In the holding member 110 according to Embodiment 2, the electrode portion 160 comprises a first electrode portion 160A disposed on one side (upper) of the resistor 50 in the first direction, and a second electrode portion 160B disposed on the other side (down) of the resistor 50 in the first direction.

[0048] With this configuration, the area of ​​the electrode portion 160 can be adjusted on one side and the other side in the first direction, making it easier to bring the electrode ratio between the divided regions 72 closer together.

[0049] [Details of Embodiment 3 of this Disclosure] A specific example of Embodiment 3 of this disclosure will be described with reference to Figure 6. Components similar to those in Embodiment 1 will be denoted by the same reference numerals as in Embodiment 1, and their description may be omitted.

[0050] The electrostatic chuck 201 of Embodiment 3 comprises a holding member 210 and a base member 220. The holding member 210 comprises a high-frequency electrode 280 and a high-frequency electrode driver 290 formed inside the main body 11.

[0051] <High-frequency electrodes> The high-frequency electrode 280 is positioned with a vertical gap between it and the chuck electrode 40. In this embodiment, the high-frequency electrode 280 is positioned below the chuck electrode 40. The high-frequency electrode 280 is made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The high-frequency electrode 280 does not necessarily have to be divided into multiple zones in view along the Z-axis. The shape of the high-frequency electrode 280 in view along the Z-axis may be, for example, approximately circular or spiral. The high-frequency electrode 280 is electrically connected to a high-frequency power supply (not shown).

[0052] The high-frequency electrode 280 can be used for various purposes depending on the frequency of the high-frequency power supply. For example, when the frequency of the high-frequency power supply is tens to hundreds of MHz, the high-frequency electrode 280 can be used for the purpose of generating plasma. For example, when the frequency of the high-frequency power supply is hundreds of kHz, the high-frequency electrode 280 can be used for the purpose of attracting ions or the like to the wafer W held by the holding member 210.

[0053] <Driver for high-frequency electrodes> The high-frequency electrode driver 290 is a driver electrically connected to the high-frequency electrode 280. The high-frequency electrode driver 290 and the high-frequency electrode 280 are connected via a via 291. The high-frequency electrode driver 290 is also connected to terminal 215 via a via 292. Terminal 215 is housed in a terminal hole 223 provided in the electrostatic chuck 201. Terminal hole 223 is formed extending in the Z-axis direction from the lower surface 20B of the base member 220 to the inside of the holding member 210. Terminal 215 is connected to a high-frequency power supply (not shown).

[0054] The high-frequency electrode driver 290 is positioned near the resistor 50 in the Z-axis direction. More specifically, the high-frequency electrode driver 290 is positioned approximately 0.2 to 0.8 mm away from the resistor 50 in the Z-axis direction. In this embodiment, the high-frequency electrode driver 290 is located above the resistor 50. The high-frequency electrode driver 290 in this embodiment does not necessarily have to be included in the electrode section 60. That is, the high-frequency electrode driver 290 may be a conductive layer that is not considered in the calculation of the electrode ratio.

[0055] The effects of Embodiment 3 are the same as those of Embodiment 1, so their explanation will be omitted.

[0056] [Details of Embodiment 4 of this Disclosure] A specific example of Embodiment 4 of this disclosure will be described with reference to Figure 7. Components similar to those in Embodiment 1 will be denoted by the same reference numerals as in Embodiment 1, and their description may be omitted.

[0057] The electrostatic chuck 301 of Embodiment 4 comprises a holding member 310 and a base member 220. The holding member 310 comprises a high-frequency electrode 280 and a high-frequency electrode driver 390 formed inside the main body 11. The holding member 310 of Embodiment 4 comprises an electrode section 360. The electrode section 360 comprises a resistor driver 362 and a high-frequency electrode driver 390.

[0058] The resistor driver 362 is connected to the resistor 50 via via 51. The resistor driver 362 is also connected to terminal 14 via via 61. The resistor driver 362 is a conductive layer corresponding to the electrode portion 60 of Embodiment 1. The electrode region 370 of Embodiment 4 is composed of a high-frequency electrode driver 390, a resistor driver 362, and a portion of the insulator.

[0059] The high-frequency electrode driver 390 is configured similarly to the high-frequency electrode driver 290 of Embodiment 3, except that it is included in the electrode portion 360. According to Embodiment 4, a portion of the conductive layer of the electrode portion 360 can be effectively utilized as the high-frequency electrode driver 390.

[0060] In Embodiment 3, the high-frequency electrode driver 290 is provided in a different layer from the electrode portion 60. On the other hand, in Embodiment 4, the high-frequency electrode driver 390 is provided in the same layer as the resistor driver 362. Therefore, compared to Embodiment 3, it is easier to miniaturize the holding member 310 in the vertical direction.

[0061] <Effects of Embodiment 4> In the holding member 310 according to Embodiment 4, the high-frequency electrode driver 390 is included in the electrode portion 360.

[0062] With this configuration, a portion of the conductive layer included in the electrode section 360 can be effectively utilized as a high-frequency electrode driver 390.

[0063] <Other Embodiments> (1) In Embodiment 1, the electrode zone region 71 was divided into four sections, but the number of divided regions formed by partitioning the electrode zone region only needs to be two or more, and may be changed as appropriate based on the area of ​​the electrode zone region, the accuracy of the physical properties required for the resistor, etc.

[0064] (2) In Embodiment 1, the electrode portion 60 was a driver electrically connected to the resistor 50, but the electrode portion does not have to be a driver. For example, the electrode portion may be a float electrode.

[0065] (3) In Embodiment 4, the electrode section 360 comprises a high-frequency electrode driver 390 and a resistor driver 362, and the high-frequency electrode driver 390 and the resistor driver 362 are formed in the same layer. However, when the high-frequency electrode driver is included in the electrode section, the high-frequency electrode driver may be formed in a different layer from the conductive layers other than the high-frequency electrode driver included in the electrode section. [Explanation of Symbols]

[0066] 1: Electrostatic chuck 10: Holding member, 10A: First surface, 10B: Second surface, 11: Main body, 12: Zone, 13: Unformed zone, 14: Terminal 20: Base member, 20A: Top surface, 20B: Bottom surface, 21: Refrigerant flow path, 22: Terminal hole 30: Joint 40: Chuck electrode 50: Resistor, 51: Via 60: Electrode section, 61: Via 70: Electrode region, 71: Electrode zone region, 72, 72A, 72B, 72C, 72D: Divided regions 101: Electrostatic Chuck 110: Retaining member 160: Electrode part, 160A: First electrode part, 160B: Second electrode part 201: Electrostatic Chuck 210: Retaining member, 215: Terminal 220: Base member, 223: Terminal hole 280: High-frequency electrode 290: Driver for high-frequency electrodes, 291: Via, 292: Via 301: Electrostatic Chuck 310: Retaining member 360: Electrode section, 362: Driver for resistor 370: Electrode area 390: Driver for high-frequency electrodes W: wafer

Claims

1. A main body made of an insulator, having a first surface and a second surface located on the opposite side of the first surface, The main body comprises a plurality of resistors formed within a plurality of zones, It comprises an electrode portion arranged near the resistor in a first direction perpendicular to the first surface, A layered region extending parallel to the first surface, including the electrode portion and a part of the insulator, is defined as the electrode region. When the portion of the electrode region corresponding to one of the zones is defined as the electrode zone region, When the electrode zone region is divided into multiple sections and multiple divided sections are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portion within one of the divided sections to the area of ​​one of the divided sections when viewed from the first direction. A holding member in which the electrode ratio of each of the multiple divided regions falls within a predetermined range.

2. The holding member according to claim 1, wherein the electrode ratio is 90% or less.

3. The holding member according to claim 1 or claim 2, wherein the electrode portion is a driver electrically connected to the resistor.

4. The retaining member according to claim 1 or claim 2, wherein the electrode portion comprises a first electrode portion disposed on one side of the resistor in the first direction and a second electrode portion disposed on the other side of the resistor in the first direction.

5. A high-frequency electrode formed inside the main body, The main body further comprises a high-frequency electrode driver formed inside the main body and electrically connected to the high-frequency electrode, The holding member according to claim 1 or claim 2, wherein the high-frequency electrode driver is arranged near the resistor in the first direction.

6. The high-frequency electrode driver is a holding member according to claim 5, which is included in the electrode portion.

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