Power module

Abstract

To provide a power module that can be miniaturized. [Solution] The power module includes a first semiconductor element 100 provided with a first electrode 111 and a second electrode 112, a second semiconductor element 200 provided with a third electrode 211 and a fourth electrode 212, first insulating substrates 411 and 421 to which the first and second semiconductor elements are bonded, a first conductive member 416 that penetrates the first insulating substrate, is electrically connected to the first electrode and laminated on the first insulating substrate, a second conductive member 426 that penetrates the first insulating substrate, is electrically connected to the third electrode and laminated on the first insulating substrate, a third conductive member 610 electrically connected to the second electrode, a fourth conductive member 620 electrically connected to the fourth electrode, a fifth conductive member 510 that electrically connects the first conductive member and the fourth conductive member, a first terminal 41 electrically connected to the third conductive member, a second terminal 42 electrically connected to the second conductive member, and an insulating film 50 provided between the first terminal and the second terminal.

Description

Technical Field

[0001] The present disclosure relates to a power module.

Background Art

[0002] A power module has been proposed in which the P terminal and the N terminal overlap in a plan view.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, there has been an increasing demand for miniaturization of power modules.

[0005] An object of the present disclosure is to provide a power module that can be miniaturized.

Means for Solving the Problems

[0006] According to one embodiment of the present disclosure, a first semiconductor element having a first surface and a second surface opposite to the first surface, with a first electrode provided on the first surface and a second electrode provided on the second surface; a second semiconductor element having a third surface and a fourth surface opposite to the third surface, with a third electrode provided on the third surface and a fourth electrode provided on the fourth surface; a first insulating substrate having a fifth surface to which the first semiconductor element and the second semiconductor element are bonded, and a sixth surface opposite to the fifth surface; a first conductive member penetrating the first insulating substrate, electrically connected to the first electrode, and laminated on the sixth surface of the first insulating substrate; and the first insulating substrate A power module is provided, comprising: a second conductive member that penetrates the material and is electrically connected to the third electrode and laminated on the sixth surface of the first insulating substrate; a third conductive member electrically connected to the second electrode; a fourth conductive member electrically connected to the fourth electrode; a fifth conductive member electrically connecting the first conductive member and the fourth conductive member; a first terminal electrically connected to the third conductive member; a second terminal electrically connected to the second conductive member; and an insulating film having a seventh surface facing the first terminal and an eighth surface facing the second terminal, provided between the first and second terminals. [Effects of the Invention]

[0007] According to the disclosed technology, power modules can be miniaturized. [Brief explanation of the drawing]

[0008] [Figure 1] This is a perspective view (part 1) showing a power module according to the first embodiment. [Figure 2] This is a perspective view (part 2) showing a power module according to the first embodiment. [Figure 3] This is a front view showing a part of the power module according to the first embodiment. [Figure 4] This is a perspective view (part 1) showing a part of the power module according to the first embodiment. [Figure 5] This is a perspective view (part 2) showing a part of the power module according to the first embodiment. [Figure 6] This is a perspective view (part 3) showing a part of the power module according to the first embodiment. [Figure 7] This is a perspective view (part 4) showing a part of the power module according to the first embodiment. [Figure 8] This is a perspective view (part 5) showing a part of the power module according to the first embodiment. [Figure 9] This is a schematic cross-sectional view showing a power module according to the first embodiment. [Figure 10] This is a schematic cross-sectional view showing a part of the power module according to the first embodiment. [Figure 11] This is a schematic top view showing a part of the power module according to the first embodiment. [Figure 12] This is a circuit diagram showing a power module according to the first embodiment. [Figure 13] This is a perspective view (part 1) showing a power module according to the second embodiment. [Figure 14] This is a perspective view (part 2) showing a power module according to the second embodiment. [Figure 15] This is a perspective view (part 1) showing a part of the power module according to the second embodiment. [Figure 16] This is a perspective view (part 2) showing a part of the power module according to the second embodiment. [Figure 17] This is a schematic cross-sectional view showing a part of the power module according to the second embodiment. [Modes for carrying out the invention]

[0009] Hereinafter, embodiments will be specifically described with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configuration may be denoted by the same reference numerals, and redundant descriptions may be omitted. In the present disclosure, the X-axis (X1-X2 direction), Y-axis (Y1-Y2 direction), and Z-axis (Z1-Z2 direction) are orthogonal to each other. The plane including the X-axis and Y-axis is referred to as the XY plane, the plane including the Y-axis and Z-axis is referred to as the YZ plane, and the plane including the Z-axis and X-axis is referred to as the ZX plane. For convenience, the Z1-Z2 direction is the vertical direction, the Z1 side is the upper side, and the Z2 side is the lower side. In addition, a plan view means viewing an object from the Z1 side, and a planar shape means the shape of the object viewed from the Z1 side. However, the power module can be used in an upside-down state or arranged at an arbitrary angle.

[0010] (First Embodiment) The first embodiment will be described. The first embodiment relates to a power module. FIGS. 1 and 2 are perspective views showing the power module according to the first embodiment. FIG. 3 is a front view showing a part of the power module according to the first embodiment. FIGS. 4 to 8 are perspective views showing a part of the power module according to the first embodiment. FIG. 9 is a cross-sectional view schematically showing the power module according to the first embodiment. FIG. 10 is a cross-sectional view schematically showing a part of the power module according to the first embodiment. FIG. 11 is a top view schematically showing a part of the power module according to the first embodiment.

[0011] As shown in FIGS. 1 to 11, the power module 1 according to the first embodiment includes a semiconductor package 10, a housing 20, a heat sink 30, external terminals 41, external terminals 42, external terminals 43, an insulating film 50, and four male screws 60.

[0012] As shown in FIGS. 1, 9, and 11, the semiconductor package 10 includes four semiconductor elements 100, four semiconductor elements 200, a flexible wiring board 410, a flexible wiring board 420, a shim 510, a shim 520, lead terminals 610, lead terminals 620, control terminals 71, control terminals 72, and a mold 700.

[0013] The semiconductor elements 100 and 200 are formed using, for example, silicon (Si) or silicon carbide (SiC). The semiconductor elements 100 and 200 may be formed using gallium nitride (GaN) or gallium arsenide (GaAs). For example, the semiconductor elements 100 and 200 are insulated gate bipolar transistors (IGBTs) or metal-oxide-semiconductor field-effect transistors (MOSFETs). The planar shape of the semiconductor elements 100 and 200 is, for example, rectangular. The thickness of the semiconductor elements 100 and 200 is, for example, about 50 μm to 500 μm.

[0014] As shown in FIG. 9, the semiconductor element 100 has one surface 101 and the other surface 102 on the opposite side of the one surface 101. The semiconductor element 100 also has a main body portion 110, an electrode 111, an electrode 112, and an electrode 113. The electrodes 111 and 113 are provided on the one surface 101, and the electrode 112 is provided on the other surface 102. For example, the electrodes 111, 112, and 113 are a source electrode, a drain electrode, and a gate electrode, respectively. The semiconductor element 100 is an example of a first semiconductor element, the one surface 101 is an example of a first surface, and the other surface 102 is an example of a second surface. The electrode 111 is an example of a first electrode, and the electrode 112 is an example of a second electrode.

[0015] As shown in Figure 9, the semiconductor element 200 has one surface 201 and the other surface 202 opposite to the surface 201. The semiconductor element 200 also has a main body 210, electrodes 211, 212, and 213. Electrodes 211 and 213 are provided on one surface 201, and electrode 212 is provided on the other surface 202. For example, electrodes 211, 212, and 213 are the source electrode, drain electrode, and gate electrode, respectively. The semiconductor element 200 is an example of a second semiconductor element, one surface 201 is an example of a third surface, and the other surface 202 is an example of a fourth surface. Electrode 211 is an example of a third electrode, and electrode 212 is an example of a fourth electrode.

[0016] Electrodes 111, 112, 113, 211, 212, and 213 (hereinafter collectively referred to as "electrodes") can be made from materials such as aluminum (Al) or copper (Cu), or alloys containing at least one metal selected from these metals. If necessary, a surface treatment layer may be formed on the surface of the electrodes. Examples of surface treatment layers include a gold (Au) layer, a nickel (Ni) layer / Au layer (a metal layer formed by stacking Ni and Au layers in that order), and a Ni / palladium (Pd) layer / Au layer (a metal layer formed by stacking Ni, Pd, and Au layers in that order). For these Au, Ni, and Pd layers, for example, metal layers formed by electroless plating (electroless plated metal layers) can be used. Furthermore, the Au layer is a metal layer made of Au or an Au alloy, the Ni layer is a metal layer made of Ni or a Ni alloy, and the Pd layer is a metal layer made of Pd or a Pd alloy.

[0017] Shims 510 and 520 are metal plates, such as copper plates. The thickness of shims 510 and 520 is approximately the same as the thickness of semiconductor elements 100 and 200.

[0018] The flexible wiring board 410 comprises an insulating substrate 411, an insulating adhesive layer 412, and a wiring layer 415. The insulating substrate 411 has one surface 413 and another surface 414 opposite to the first surface 413. The adhesive layer 412 is provided on the first surface 413, and the wiring layer 415 is provided on the other surface 414. The adhesive layer 412 may be provided over the entire surface 413. The wiring layer 415 is laminated on the other surface 414. The insulating substrate 411 is an example of a second insulating substrate. The first surface 413 is an example of a ninth surface, and the other surface 414 is an example of a tenth surface.

[0019] The insulating substrate 411 is, for example, a resin film. As the material for the resin film, insulating resins such as polyimide resins, polyethylene resins, and epoxy resins can be used. The insulating substrate 411 is, for example, flexible. Here, flexibility refers to the property of being able to be bent or flexed. The planar shape of the insulating substrate 411 is, for example, rectangular. The thickness of the insulating substrate 411 is, for example, about 50 μm to 100 μm.

[0020] Four semiconductor elements 100 and shims 510 are bonded to one surface 413 of an insulating substrate 411 by an adhesive layer 412. One surface 101 of the semiconductor elements 100 faces the one surface 413 of the insulating substrate 411. Through holes 418 reaching the electrodes 111, through holes 419 reaching the shims 510, and through holes (not shown) reaching the electrodes 113 are formed in the insulating substrate 411 and the adhesive layer 412. Multiple through holes 418 or multiple through holes 419 may be formed. The shim 510 is an example of a fifth conductive member.

[0021] For example, epoxy, polyimide, or silicone adhesives can be used as the material for the adhesive layer 412. The thickness of the adhesive layer 412 is, for example, about 20 μm to 40 μm.

[0022] As shown in Figures 9 and 11, the wiring layer 415 has wiring 416 connected to electrode 111 through through hole 418 and wiring 417 connected to electrode 113 through through hole (not shown). Wiring 416 is also connected to shim 510 through through hole 419. Wiring 416 is an example of a first conductive member.

[0023] The wiring 416 includes via wiring filled in through-hole 418, via wiring filled in through-hole 419, and a wiring pattern formed on the other surface 414 of the insulating substrate 411. The wiring 417 includes via wiring filled in through-hole (not shown) and a wiring pattern formed on the other surface 414 of the insulating substrate 411.

[0024] The flexible wiring board 420 comprises an insulating substrate 421, an insulating adhesive layer 422, and a wiring layer 425. The insulating substrate 421 has one surface 423 and another surface 424 opposite to the first surface 423. The adhesive layer 422 is provided on the first surface 423, and the wiring layer 425 is provided on the other surface 424. The adhesive layer 422 may be provided over the entire surface 423. The wiring layer 425 is laminated on the other surface 424. The insulating substrate 421 is an example of a third insulating substrate. The first surface 423 is an example of an eleventh surface, and the other surface 424 is an example of a twelfth surface.

[0025] Four semiconductor elements 200 and shims 520 are bonded to one surface 423 of an insulating substrate 421 by an adhesive layer 422. One surface 201 of the semiconductor elements 200 faces the one surface 423 of the insulating substrate 421. Through holes 428 reaching the electrode 211 and through holes (not shown) reaching the electrode 213 are formed in the insulating substrate 421 and the adhesive layer 422. Multiple through holes 428 may be formed.

[0026] The material and thickness of the insulating substrate 421 are, for example, the same as the material and thickness of the insulating substrate 411. The material and thickness of the adhesive layer 422 are, for example, the same as the material and thickness of the adhesive layer 412.

[0027] As shown in Figures 9 and 11, the wiring layer 425 has wiring 426 connected to electrode 211 through through hole 428 and wiring 427 connected to electrode 213 through through hole (not shown). Wiring 426 and shim 520 are electrically insulated from each other. Wiring 426 is an example of a second conductive member.

[0028] The wiring 426 includes via wiring filled in through holes 428 and a wiring pattern formed on the other surface 424 of the insulating substrate 421. The wiring 427 includes via wiring filled in through holes (not shown) and a wiring pattern formed on the other surface 424 of the insulating substrate 421.

[0029] A lead terminal 610 is bonded to the electrode 112 of the semiconductor element 100 by a conductive adhesive layer 611. A lead terminal 620 is bonded to the electrode 212 of the semiconductor element 200 by a conductive adhesive layer 621. A shim 520 is also bonded to the lead terminal 620 by a conductive adhesive layer 621. A shim 510 is bonded to the lead terminal 620 by a conductive adhesive layer 622. The lead terminals 610 and 620 are formed from, for example, lead frames made of Cu. The conductive adhesive layers 611, 621 and 622 are, for example, solder layers or sintered metal layers. The conductive adhesive layers 611, 621 and 622 may be composed of conductive paste. The lead terminal 610 is an example of a third conductive member, and the lead terminal 620 is an example of a fourth conductive member.

[0030] The mold 700 seals the semiconductor element 100, the semiconductor element 200, the flexible wiring board 410, the flexible wiring board 420, the shim 510, the shim 520, the lead terminal 610, and the lead terminal 620. The lower surface (Z2 side) of the lead terminal 610 and the lower surface (Z2 side) of the lead terminal 620 are exposed from the mold 700. In addition, the mold 700 has an opening 701 that reaches the upper surface (Z1 side) of the lead terminal 610, an opening 702 that reaches the upper surface (Z1 side) of the wiring 426, and an opening 703 that reaches the upper surface (Z1 side) of the lead terminal 620.

[0031] As shown in Figures 6 and 9, the semiconductor package 10 is mounted on the heat sink 30. As shown in Figures 7 and 9, the semiconductor elements 100 and 200 are placed on the heat sink 30. A thermal interface material (TIM) 31 is provided between the semiconductor package 10 and the heat sink 30. The TIM 31 is in contact with the lead terminals 610 and 620 and the heat sink 30.

[0032] As shown in Figures 6, 7, and 10, four holes 35 into which male screws 60 are inserted are formed on the upper surface of the heat sink 30. Female screws are formed on the walls of the holes 35. In a plan view, one hole 35 is formed on the Y1 side of the lead terminal 610, one hole 35 is formed on the Y2 side of the lead terminal 610, one hole 35 is formed on the Y1 side of the lead terminal 620, and one hole 35 is formed on the Y2 side of the lead terminal 620. The heat sink 30 is an example of a heat dissipation member.

[0033] The housing 20 has a lower case 21 and an upper case 22. The housing 20 is mounted on a heat sink 30, houses semiconductor elements 100 and 200, and secures external terminals 41, 42, and 43. The lower case 21 is mounted on the heat sink 30 and surrounds the semiconductor package 10 in a plan view. The upper case 22 is mounted on top of the lower case 21. The lower case 21 is an example of a first case, and the upper case 22 is an example of a second case.

[0034] External terminals 41 and 42 are formed from, for example, metal plates. As shown in Figures 3 and 9, an insulating film 50 is provided between external terminals 41 and 42. The insulating film 50 has one surface 51 facing external terminal 41 and another surface 52 on the opposite side of surface 51 facing external terminal 42. For example, external terminal 41 contacts one surface 51 of the insulating film 50, and external terminal 42 contacts the other surface 52 of the insulating film 50. The material of the insulating film 50 is, for example, polyimide. One surface 51 is an example of a seventh surface, and the other surface 52 is an example of an eighth surface.

[0035] As shown in Figure 3, the external terminal 41 has a flat portion 41A and a curved portion 41B. The flat portion 41A has its thickness in the Z-axis direction and extends along the X-axis. The curved portion 41B is connected to the X2-side end of the flat portion 41A and protrudes toward the Z2 side. For example, in a cross-sectional view perpendicular to the Y-axis, the flat portion 41A has a roughly U-shape or a roughly J-shape. The external terminal 42 has a flat portion 42A and a curved portion 42B. The flat portion 42A has its thickness in the Z-axis direction and extends along the X-axis. The curved portion 42B is connected to the X2-side end of the flat portion 42A and protrudes toward the Z2 side. For example, in a cross-sectional view perpendicular to the Y-axis, the flat portion 42A has a roughly U-shape or a roughly J-shape. The external terminal 41 is an example of a first terminal, and the external terminal 42 is an example of a second terminal.

[0036] The insulating film 50 is provided between the external terminal 41 and the flat plate portion 42A. The laminate of the flat plate portion 41A, the insulating film 50, and the flat plate portion 42A is placed on top of the lower case 21. The external terminal 41 is on top of the lower case 21, the insulating film 50 is on top of the external terminal 41, and the external terminal 42 is on top of the insulating film 50.

[0037] The curved portion 41B extends inside the opening 701 and is joined to the lead terminal 610 by the conductive adhesive layer 631. The curved portion 42B extends inside the opening 702 and is joined to the wiring 426 by the conductive adhesive layer 632. The insulating film 50 covers the opening 701 and extends beyond the X2 side end of the opening 701 towards X2.

[0038] The external terminal 43 is formed from, for example, a metal plate. The external terminal 43 has a flat portion 43A and a curved portion 43B. The flat portion 43A has its thickness in the Z-axis direction and extends along the X-axis. The curved portion 43B is connected to the X1 end of the flat portion 43A and protrudes towards the Z2 side. For example, in a cross-sectional view perpendicular to the Y-axis, the flat portion 43A has a roughly U-shape or a roughly J-shape. The external terminal 43 is an example of a third terminal.

[0039] The flat portion 43A is positioned on top of the lower case 21. The curved portion 43B fits inside the opening 703 and is joined to the lead terminal 620 by a conductive adhesive layer 633.

[0040] The insulating film 50 may have portions that are separated from the external terminals 41 and 42. For example, the insulating film 50 may have portions that are located above the lower case 21, separated from the external terminals 41 and 42, or portions that are located above the external terminal 43, separated from the external terminals 41 and 42.

[0041] The upper case 22 covers the semiconductor package 10, the external terminals 41, 42, and 43, and the insulating film 50. The X1-side ends of external terminals 41 and 42 are sandwiched between the upper case 22 and the lower case 21 and fixed to the upper case 22 and the lower case 21. On the other hand, the X2-side ends of external terminals 41 and 42 are not fixed to the upper case 22 and the lower case 21. Thus, external terminals 41 and 42 have a fixed end and a free end, like a cantilever beam. Also, the X2-side end of external terminal 43 is sandwiched between the upper case 22 and the lower case 21 and fixed to the upper case 22 and the lower case 21. On the other hand, the X1-side end of external terminal 43 is not fixed to the upper case 22 and the lower case 21. That is, external terminal 43 also has a fixed end and a free end, like a cantilever beam.

[0042] As shown in Figures 8, 9, and 10, the upper case 22 has a surface 25 facing the lower case and protrusions 61, 62, 63, and 64 that project from the surface 25 toward the Z2 side.

[0043] The protrusions 61, 62, and 63 have a rectangular plate shape and extend along the Y axis. Protrusion 63 is on the X2 side of protrusion 62, and protrusion 62 is on the X2 side of protrusion 61. Protrusion 61 contacts the flat plate portion 42A near the curved portion 41B and presses the curved portion 41B toward the lead terminal 610. Protrusion 62 contacts the flat plate portion 42A near the curved portion 42B and presses the curved portion 42B toward the wiring 426. Protrusion 63 contacts the flat plate portion 43A near the curved portion 43B and presses the curved portion 43B toward the lead terminal 620.

[0044] The upper case 22 has four protrusions 64. Each protrusion 64 has a cylindrical protrusion 65 that projects from the surface 25 toward the Z2 side, and a cylindrical protrusion 66 that projects from the protrusion 65 toward the Z2 side. In plan view, the protrusions 64 overlap with the holes 35 formed in the heat sink 30. For example, the central axes of the protrusions 65 and 66 and the holes 35 coincide. In plan view, the diameter of the protrusion 66 is smaller than the diameter of the protrusion 65.

[0045] As shown in Figures 1, 2, 8, and 9, the lower case 21 has an opening 26 that reaches the lower surface of the external terminal 41 and an opening 27 that reaches the lower surface of the external terminal 43, and the upper case 22 has an opening 28 that reaches the upper surface of the external terminal 42 and an opening 29 that reaches the upper surface of the external terminal 43.

[0046] As shown in Figures 4, 5, and 10, a through-hole 23 is formed in the lower case 21 through which the male screw 60 passes. As shown in Figures 8 and 10, a through-hole 24 is formed in the upper case 22 through which the male screw 60 passes. The through-hole 24 passes through the protrusion 64. The through-holes 23 and 24 connect to a hole 35 formed in the heat sink 30. For example, the diameter of the through-hole 24 is larger than the diameter of the hole 35, and the diameter of the through-hole 23 is larger than the diameter of the through-hole 24. The protrusion 66 fits inside the through-hole 23. In a plan view, the through-holes 24 and 23 overlap with the hole 35. For example, the central axes coincide between the through-holes 24 and 23 and the hole 35.

[0047] The male screw 60 passes through the through holes 24 and 23 and is screwed into the hole 35. As shown in Figure 10, there is a projection 66 between the male screw 60 and the inner wall surface of the through hole 23. The head of the male screw 60 contacts the upper surface of the upper case 22. The male screw 60 presses the upper case 22 toward the heat sink 30 and tightens the housing 20 toward the heat sink 30. The male screw 60 is, for example, a bolt. The male screw 60 is an example of a fastening member.

[0048] Control terminal 71 is joined to wiring 417 by a conductive adhesive layer (not shown), and control terminal 72 is joined to wiring 427 by a conductive adhesive layer (not shown). As shown in Figure 4, a through hole 45 is formed in the external terminal 42 through which control terminal 71 passes, and as shown in Figure 6, a through hole 711 is formed in the mold 700 through which control terminal 71 passes, and a through hole 712 is formed through which control terminal 72 passes. As shown in Figures 1 and 8, a through hole 73 is formed in the upper case 22 through which control terminal 71 passes, and a through hole 74 is formed through which control terminal 72 passes. Control terminal 71 extends along the Z-axis on wiring 417, passing through through holes 45, 711, and 73 to the outside of the upper case 22. Control terminal 72 extends along the Z-axis on wiring 427, passing through through holes 712 and 74 to the outside of the upper case 22.

[0049] Here, the circuit configuration of the power module 1 according to the first embodiment will be described. Figure 12 is a circuit diagram showing the power module according to the first embodiment. For simplification, Figure 12 shows one of the four semiconductor elements 100 and one of the four semiconductor elements 200, but the four semiconductor elements 100 are connected in parallel with each other, and the four semiconductor elements 200 are connected in parallel with each other. The power module 1 has the half-bridge circuit shown in Figure 12.

[0050] As shown in Figure 12, the electrode 112 of semiconductor element 100 is electrically connected to the external terminal 41, which is the P terminal, via the lead terminal 610. The electrode 211 of semiconductor element 200 is electrically connected to the external terminal 42, which is the N terminal, via the wiring 426. In addition, the electrode 111 of semiconductor element 100 is electrically connected to the external terminal 43, which is the O terminal, via the wiring 416, shim 520, and lead terminal 620, and the electrode 212 of semiconductor element 200 is electrically connected to the external terminal 43, which is the O terminal, via the lead terminal 620. The P terminal is the positive input terminal, the N terminal is the negative input terminal, and the O terminal is the output terminal. Therefore, currents flow in opposite directions to the external terminals 41 and 42.

[0051] Furthermore, the electrode 113 of semiconductor element 100 is electrically connected to control terminal 71 via wiring 417, and the electrode 213 of semiconductor element 200 is electrically connected to control terminal 72 via wiring 427. Therefore, a control signal is input to the electrode 113 of semiconductor element 100 from control terminal 71, and a control signal is input to the electrode 213 of semiconductor element 200 from control terminal 72.

[0052] Next, a method for manufacturing a power module according to the first embodiment will be described.

[0053] First, prepare the semiconductor package 10, the lower case 21, the upper case 22, the heat sink 30, the external terminals 41, 42, and 43, the insulating film 50, and four male screws 60.

[0054] Next, the semiconductor package 10 is placed on the heat sink 30 via the TIM 31. Then, the lower case 21 is placed on the heat sink 30. Subsequently, while placing the external terminals 41 and 43 on the lower case 21, the curved portion 41B is joined to the lead terminal 610 with a conductive adhesive layer 631, and the curved portion 43B is joined to the lead terminal 620 with a conductive adhesive layer 633. Next, the insulating film 50 is placed on the external terminal 41. Then, while placing the external terminal 42 on the insulating film 50, the curved portion 42B is joined to the wiring 426 with a conductive adhesive layer 632.

[0055] Next, the upper case 22 is placed on top of the lower case 21, and the male screw 60 is screwed into the hole 35. As a result, the male screw 60 presses the upper case 22 toward the heat sink 30, and the laminate of the flat plate portion 41A, the insulating film 50, and the flat plate portion 42A is sandwiched between the upper case 22 and the lower case 21, and the flat plate portion 43A is also sandwiched between the upper case 22 and the lower case 21.

[0056] In this way, in the power module 1, the semiconductor element 100 is bonded to one surface 413 of the insulating substrate 411, wiring 416 is laminated on the other surface 414 of the insulating substrate 411, the electrode 111 of the semiconductor element 100 is electrically connected to the wiring 416, and the electrode 112 of the semiconductor element 100 is electrically connected to the lead terminal 610. In addition, the semiconductor element 200 is bonded to one surface 423 of the insulating substrate 421, wiring 426 is laminated on the other surface 424 of the insulating substrate 421, the electrode 211 of the semiconductor element 200 is electrically connected to the wiring 426, and the electrode 212 of the semiconductor element 200 is electrically connected to the lead terminal 620. Furthermore, the wiring 416 and the lead terminal 620 are electrically connected to each other by a shim 510. In this way, a half-bridge circuit is configured. An insulating film 50 is provided between the external terminal 41 electrically connected to the lead terminal 610 and the external terminal 42 electrically connected to the wiring 426. Therefore, the semiconductor package 10 having a half-bridge circuit can be miniaturized, and the area occupied by the external terminals 41 and 42 can be reduced compared to a configuration where the external terminals 41 and 42 are arranged side by side in a plan view. Accordingly, according to the first embodiment, a compact power module 1 can be obtained. Furthermore, even if the area of ​​the external terminals 41 and 42 in a plan view is increased, the impact on the overall size of the power module 1 is small, so the wiring resistance at the external terminals 41 and 42 can also be reduced by increasing the area of ​​the external terminals 41 and 42 in a plan view. Moreover, since the external terminals 41 and 42 are laminated with an insulating film 50 sandwiched between them, the inductance can be significantly reduced.

[0057] Furthermore, the power module 1 can be manufactured primarily by sequentially stacking each component on the heat sink 30 and fastening them with male screws 60. Therefore, alignment is easy, and the power module 1 is easy to manufacture.

[0058] Furthermore, because there is a protrusion 66 between the male screw 60 screwed into the heat sink 30 and the inner wall surface of the through hole 23, high insulation can be obtained between the heat sink 30 and the semiconductor package 10, even if the heat sink 30 is made of metal.

[0059] (Second Embodiment) A second embodiment will now be described. The second embodiment differs from the first embodiment mainly in the configuration of the lower and upper cases. Figures 13 and 14 are perspective views showing the entire power module according to the second embodiment. Figures 15 and 16 are perspective views showing the power module according to the second embodiment. Figure 17 is a schematic cross-sectional view showing a part of the power module according to the second embodiment. In Figures 13 to 17, some parts, such as the external terminal 43, control terminal 71 and control terminal 72, are omitted from the illustration.

[0060] As shown in Figures 13 to 17, the power module 2 according to the second embodiment has a housing 80 instead of a housing 20. Also, there is one male screw 60. The housing 80 has a lower case 81 and an upper case 82.

[0061] As shown in Figure 15, a single hole 35 into which a male screw 60 is inserted is formed on the upper surface of the heat sink 30. In plan view, the hole 35 is formed on the X1 side of the semiconductor package 10.

[0062] As shown in Figures 13 and 14, the lower case 81 is provided on top of the heat sink 30 and the semiconductor package 10. The lower case 81 covers a portion of the semiconductor package 10. The lower case 81 covers the openings 701 and 702 of the mold 700, but the opening 703 is exposed from the lower case 81.

[0063] As shown in Figure 14, a laminate consisting of the flat plate portion 41A of the external terminal 41, the insulating film 50, and the flat plate portion 42A of the external terminal 42 is placed on the lower case 21. The external terminal 41 is on the lower case 21, the insulating film 50 is on the external terminal 41, and the external terminal 42 is on the insulating film 50. The laminate consisting of the flat plate portion 41A, the insulating film 50, and the flat plate portion 42A overlaps with the hole 35 in a plan view.

[0064] The upper case 82 is placed on top of the lower case 81 and covers a part of the semiconductor package 10, the external terminals 41, 42 and 43, and the insulating film 50.

[0065] An opening 86 is formed in the lower case 81 that reaches the lower surface of the external terminal 41, and an opening 88 is formed in the upper case 82 that reaches the lower surface of the external terminal 42.

[0066] As shown in Figure 17, a through-hole 83 is formed in the lower case 81 through which a male screw 60 passes, and a through-hole 84 is formed in the upper case 82 through which a male screw 60 passes. Through-holes 83 and 84 connect to a hole 35 formed in the heat sink 30. For example, the diameters of through-holes 83 and 84 are larger than the diameter of hole 35. The diameters of through-hole 83 and through-hole 84 may be approximately the same. Also, a through-hole 91 is formed in the external terminal 41 through which a male screw 60 passes, a through-hole 92 is formed in the external terminal 43 through which a male screw 60 passes, and a through-hole 93 is formed in the insulating film 50 through which a male screw 60 passes. The diameters of through-holes 91 and 92 are larger than the diameters of through-holes 83 and 84. The diameters of through-hole 91 and through-hole 92 may be approximately the same. The diameter of through-hole 93 is approximately the same as the diameter of hole 35.

[0067] In a plan view, through holes 84, 92, 93, 91, and 83 overlap with hole 35. For example, the central axis coincides between through holes 84, 92, 93, 91, and 83 and hole 35. The male screw 60 passes through through holes 84, 92, 93, 91, and 83 and is screwed into hole 35. The head of the male screw 60 contacts the upper surface of the upper case 82.

[0068] Although not shown in the illustration, the external terminal 43 is located on the outside of the housing 80 and is not fixed to the housing 80.

[0069] The other configurations of power module 2 are the same as those of power module 1.

[0070] According to the second embodiment, a compact power module 2 can be obtained. Also, similar to the first embodiment, the wiring resistance at the external terminals 41 and 42 can be reduced, and the inductance can be significantly reduced. Furthermore, the power module 2 is also easy to manufacture.

[0071] The number of semiconductor elements 100 connected between external terminal 41 and external terminal 43 is not limited, and the number of semiconductor elements 200 connected between external terminal 42 and external terminal 43 is not limited. For example, the number of semiconductor elements 100 and 200 may be one or two. Also, the insulating substrate 411 and insulating substrate 421 may be integrated. In this case, the insulating substrate in which insulating substrate 411 and insulating substrate 421 are integrated is an example of the first insulating substrate, one surface 413 and 423 is an example of the fifth surface, and the other surface 414 and 424 is an example of the sixth surface.

[0072] Although preferred embodiments have been described in detail above, this disclosure is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims. [Explanation of Symbols]

[0073] 1, 2 Power Modules 10 Semiconductor Packages 20, 80 cabinets 21, 81 Lower case 22, 82 Upper case 24 Through holes 30 Heatsink 41, 42, 43 External terminals 41A, 42A, 43A flat plate part 41B, 42B, 43B curved section 50 insulating film 60 Male screw 100, 200 semiconductor devices 111, 112, 113, 211, 212, 213 electrode 410, 420 Flexible Wiring Boards 411, 421 Insulating substrate 412, 422 Adhesive layer 415, 425 wiring layer 416, 417, 426, 427 wiring 510, 520 sims 610, 620 lead terminals

Claims

1. A first semiconductor element having a first surface and a second surface opposite to the first surface, wherein a first electrode is provided on the first surface and a second electrode is provided on the second surface, A second semiconductor element having a third surface and a fourth surface opposite to the third surface, wherein a third electrode is provided on the third surface and a fourth electrode is provided on the fourth surface, A first insulating substrate having a fifth surface to which the first semiconductor element and the second semiconductor element are bonded, and a sixth surface opposite to the fifth surface, A first conductive member penetrates the first insulating substrate, is electrically connected to the first electrode, and is laminated on the sixth surface of the first insulating substrate, A second conductive member penetrates the first insulating substrate, is electrically connected to the third electrode, and is laminated on the sixth surface of the first insulating substrate, A third conductive member electrically connected to the second electrode, A fourth conductive member electrically connected to the fourth electrode, A fifth conductive member electrically connects the first conductive member and the fourth conductive member, A first terminal electrically connected to the third conductive member, A second terminal electrically connected to the second conductive member, An insulating film having a seventh surface facing the first terminal and an eighth surface facing the second terminal, provided between the first terminal and the second terminal, A power module having [a certain feature].

2. The first terminal contacts the seventh surface, The power module according to claim 1, wherein the second terminal is in contact with the eighth surface.

3. A heat dissipation member on which the first semiconductor element and the second semiconductor element are mounted, A housing provided on the heat dissipation member, housing the first semiconductor element and the second semiconductor element, and fixing the first terminal and the second terminal, A fastening member for fastening the housing toward the heat dissipation member, A power module according to claim 1 or 2, having the following features.

4. The aforementioned enclosure is The heat dissipation member and the first case that contacts the first terminal, A second case that contacts the second terminal, It has, Between the first case and the second case, the first terminal, the insulating film, and the second terminal are arranged in order. The power module according to claim 3, wherein the fastening member presses the second case toward the heat dissipation member.

5. It has a third terminal electrically connected to the first conductive member, the fourth conductive member, and the fifth conductive member, The power module according to claim 3, wherein the third terminal is fixed to the housing.

6. The power module according to claim 3, having a third terminal provided on the outside of the housing and electrically connected to the first conductive member, the fourth conductive member, and the fifth conductive member.

7. The aforementioned first insulating substrate comprises a second insulating substrate and a third insulating substrate, The second insulating substrate is The ninth surface, which is included in the fifth surface and to which the first semiconductor element is bonded, The sixth surface includes the tenth surface on which the first conductive member is laminated, It has, The third insulating substrate is, The fifth surface includes the eleventh surface to which the second semiconductor element is bonded, The sixth surface includes the twelfth surface on which the second conductive member is laminated, A power module according to claim 1 or 2, having the following features.

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