Semiconductor equipment

Abstract

Oxide semiconductors containing indium (In), gallium (Ga), and zinc (Zn). In thin-film transistors using a film, the contact resistance of the source electrode or drain electrode One of the objectives is to provide a thin-film transistor with reduced noise and a method for manufacturing the same. [Solution] Between the source electrode layer and the drain electrode layer and the IGZO semiconductor layer, Ohmic properties are achieved by intentionally providing a buffer layer with a higher carrier concentration than the conductor layer. To form contact.

Description

[Technical Field]

[0001] This invention relates to a thin-film transistor (hereinafter referred to as TFT) using an oxide semiconductor film in the channel formation region. The present invention relates to a semiconductor device having a circuit composed of (for example, liquid crystal). Light-emitting display devices, such as electro-optical devices represented by display panels and light-emitting devices having organic light-emitting elements, are used as components. Regarding the installed electronic equipment.

[0002] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This term encompasses a wide range of electronic devices, including electro-optical devices, semiconductor circuits, and electronic equipment. [Background technology]

[0003] In recent years, switching elements made of TFTs have been provided for each display pixel arranged in a matrix. Active matrix display devices (liquid crystal displays, light-emitting displays, and electrophoretic displays) Active-matrix display devices are being actively developed. A switching element is provided for each of the pixels, increasing the pixel density compared to a simple matrix system. This is advantageous because it allows for low-voltage operation.

[0004] Furthermore, thin-film transistors (TFTs) and the like can be fabricated using an oxide semiconductor film in the channel formation region. The technology for manufacturing and applying these materials to electronic and optical devices is attracting attention. For example, oxide semiconductors TFTs that use zinc oxide (ZnO) as the body membrane, and InGaO3(ZnO) m T using FTs are one example. These oxide semiconductor films are used to create TFTs on a translucent substrate. Patent Documents 1 and 2 describe technologies for forming and using these elements in switching elements of image display devices. It is disclosed in [the document]. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2007-123861 [Patent Document 2] Japanese Patent Publication No. 2007-96055 [Overview of the project] [Problems that the invention aims to solve]

[0006] Thin-film transistors that use an oxide semiconductor film in the channel formation region have a high operating speed and are manufactured The manufacturing process is relatively simple, and sufficient reliability is required.

[0007] When forming a thin-film transistor, the source electrode and drain electrode are made of a low-resistance metal material. Materials are used. In particular, when manufacturing display devices that display large areas, the resistance of the wiring affects the signal. Delay problems become more pronounced. Therefore, gold, which has low electrical resistance, is used as the material for wiring and electrodes. It is desirable to use a material of the same type. On the other hand, a source electrode made of a metal material with low electrical resistance and If we consider a thin-film transistor structure in which the drain electrode and the oxide semiconductor film are in direct contact, There is a risk of increased tact resistance. The cause of increased contact resistance is the source electrode and the drive. This is due to the formation of a Schottky junction at the contact surface between the rain electrode and the oxide semiconductor film. It can be considered one possibility.

[0008] In addition, capacitance is present in the portion where the source electrode and drain electrode are in direct contact with the oxide semiconductor film. This results in a low frequency response (called the f-response), hindering the high-speed operation of thin-film transistors. It may interfere.

[0009] Using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn) In a thin film transistor, reducing the contact resistance of a source electrode or a drain electrode is one of the problems to provide a thin film transistor and a method for manufacturing the same.

[0010] In addition, improving the operating characteristics and reliability of a thin film transistor using an oxide semiconductor film containing In, Ga, and Zn is also one of the problems.

[0011] In addition, reducing the variation in electrical characteristics of a thin film transistor using an oxide semiconductor film containing In, Ga, and Zn is also one of the problems. In particular, in a liquid crystal display device, when the variation between individual elements is large, display unevenness may occur due to the variation in TFT characteristics .

[0012] In addition, in a display device having a light emitting element, a TFT (a TFT that supplies current to a light emitting element arranged in a driving circuit or a pixel) arranged so that a constant current flows through a pixel electrode when the variation in drain current (I ) is large, there is a risk of unevenness in luminance on the display screen on .

[0013] As described above, one aspect of the present invention aims to solve at least one of the above problems.

Means for Solving the Problems

[0014] One aspect of the present invention uses an oxide semiconductor film containing In, Ga, and Zn as a semiconductor layer, and includes a thin film transistor in which a buffer layer is provided between the semiconductor layer and a source electrode layer and a drain electrode layer. is the gist.

[0015] ​In this specification, semiconductors formed using oxide semiconductor films containing In, Ga, and Zn The body layer is also referred to as the "IGZO semiconductor layer."

[0016] The source electrode layer and the IGZO semiconductor layer require ohmic contact, and furthermore, It is desirable to minimize the contact resistance as much as possible. Similarly, the drain electrode layer and IGZO The semiconductor layer requires ohmic contact, and furthermore, the contact resistance is extremely high. It is desirable to reduce the force.

[0017] Therefore, between the source electrode layer and the drain electrode layer and the IGZO semiconductor layer, the IGZO semiconductor By intentionally creating a buffer layer with a higher carrier concentration than the layer, ohmic properties can be controlled. Form contact.

[0018] The buffer layer is an oxide semiconductor film containing In, Ga, and Zn having an n-type conductivity. The following is used. The buffer layer may contain impurity elements that impart n-type properties. For example, magnesium, aluminum, titanium, iron, tin, calcium, germanium, Scandium, yttrium, zirconium, hafnium, boron, thallium, lead, etc. It can be used. Magnesium, aluminum, titanium, etc., can be included in the buffer layer. Furthermore, there is an oxygen blocking effect, and the oxygen in the semiconductor layer is affected by post-deposition heat treatment. The concentration can be maintained within the optimal range.

[0019] The buffer layer functions as an n+ layer and can also be called the drain region or source region. ru.

[0020] To reduce variations in the electrical characteristics of thin-film transistors, the IGZO semiconductor layer is made of amorphous material. It is preferable that it be in a fast state.

[0021] One embodiment of a semiconductor device disclosed herein comprises a gate electrode layer and a gate on the gate electrode layer. An insulating layer, a source electrode layer and a drain electrode layer on the gate insulating layer, and the source electrode layer and A buffer layer having an n-type conductivity is placed on the drain electrode layer, and a semiconductor layer is placed on the buffer layer. A thin-film transistor is included, and a portion of the semiconductor layer overlapping the gate electrode layer is on the gate insulating layer. It is in contact with and provided between the source electrode layer and the drain electrode layer, and consists of a semiconductor layer and a buffer layer This is an oxide semiconductor layer containing indium, gallium, and zinc, and the buffer layer is a carrier The concentration is higher than the carrier concentration in the semiconductor layer, and the semiconductor layer, source electrode layer and drain electrode layer This is electrically connected via a buffer layer.

[0022] One embodiment of the present invention solves at least one of the above problems.

[0023] In the above configuration, furthermore, the carrier concentration between the semiconductor layer and the buffer layer is greater than that of the semiconductor layer. A second buffer layer may be provided, which is higher and lower than the buffer layer. The second buffer layer is n - layer It functions as such.

[0024] Oxide semiconductor films containing In, Ga, and Zn (IGZO films) have high carrier concentrations. Consequently, it also has the characteristic of having high hole mobility. Therefore, it contains In, Ga, and Zn. The relationship between carrier concentration and hole mobility in an oxide semiconductor film is shown in Figure 25. (This invention...) In this context, the carrier concentration range of the IGZO film suitable as a channel in the semiconductor layer (for channel use) The concentration range 1) is 1 × 10 17 atoms / cm 3 Less than (more preferably 1 × 10) 11at oms / cm 3 (above), the carrier concentration range of the IGZO film suitable as the buffer layer (buffer layer concentration range 2) is 1×10 18 atoms / cm 3 or more (more preferably 1×10 2 2 atoms / cm 3 or less) is preferable. The carrier concentration of the above IGZO film is the semiconductor layer and when used as, at room temperature, the value in the state where no source, drain, and gate voltages are applied is there.

[0025] If the carrier concentration range of the IGZO for the channel exceeds the above range, there is a risk of becoming normally on as a thin film transistor. Therefore, by using an IGZO film within the above carrier concentration range as the channel of the semiconductor layer, a highly reliable thin film transistor can be obtained.

[0026] Also, it is preferable to use a titanium film for the source electrode layer and the drain electrode layer. For example, the use of a stack of a titanium film, an aluminum film, and a titanium film results in low resistance and it is difficult for hillocks to occur in the aluminum film.

[0027] Also, the side surface of the source electrode layer and the side surface of the drain electrode layer facing the side surface are covered with the buffer layer. Therefore, the channel length L of the thin film transistor corresponds to the interval between the first buffer layer covering the source electrode layer and the second buffer layer covering the drain electrode layer.

[0028] Also, the configuration of the invention for realizing the above structure is to form a gate electrode layer on a substrate, form a gate insulating layer on the gate electrode layer, and form a source electrode layer and a drain electrode on the gate insulating layer. - form a gate insulating layer on the gate electrode layer, and form a source electrode layer and a drain electrode on the gate insulating layer. A polar layer is formed, and a buffer layer having an n-type conductivity is placed on the source electrode layer and the drain electrode layer. A buffer layer is formed, and a semiconductor layer is formed on the buffer layer, and the semiconductor layer and the buffer layer are made of indium Formed using an oxide semiconductor layer containing gallium and zinc, the carrier concentration of the buffer layer The carrier concentration is higher than that of the semiconductor layer, and the semiconductor layer, source electrode layer and drain electrode layer are different. This is a method for manufacturing a semiconductor device characterized by electrical connection via a buffer layer.

[0029] In the above manufacturing method, a portion of the semiconductor layer is on the gate insulating layer that overlaps with the gate electrode layer. It is in contact with the source electrode layer and formed between the source electrode layer and the drain electrode layer.

[0030] The semiconductor layer, the buffer layer having n-type conductivity, the source electrode layer and the drain electrode layer are spa The layers should be formed by sputtering. The gate insulating layer and semiconductor layer should be formed under an oxygen atmosphere. (or oxygen 90% or more, noble gas (argon) 10% or less) and a battery with n-type conductivity The fa layer is preferably deposited under a rare gas (argon) atmosphere.

[0031] Sputtering methods include RF sputtering, which uses a high-frequency power supply for sputtering, and DC sputtering. There is also the pulsed DC sputtering method, which applies a pulsed bias. RF sputtering The method is mainly used when depositing insulating films, while the DC sputtering method is mainly used when depositing metal films. It is used for this purpose.

[0032] There are also multi-point sputtering systems that can set up multiple targets made of different materials. The apparatus can deposit multiple layers of different material films in the same chamber, or multiple types of materials in the same chamber. It is also possible to deposit films by simultaneously discharging electrical currents from similar materials.

[0033] Furthermore, a sputtering apparatus that uses the magnetron sputtering method, which has a magnetic mechanism inside the chamber. Alternatively, ECR sputtering uses plasma generated with microwaves instead of glow discharge. There are sputtering machines that use this method.

[0034] Furthermore, as a film deposition method using the sputtering method, the target material and sputtering gas components are deposited during film deposition. Reactive sputtering is a method that uses chemical reactions to form thin films of these compounds, and during film formation... There is also a bias sputtering method that applies voltage to the circuit board.

[0035] These various sputtering methods are used to create semiconductor layers, buffer layers with n-type conductivity, and source power A polar layer and a drain electrode layer are formed. [Effects of the Invention]

[0036] The present invention provides a thin-film transistor with low photocurrent, low parasitic capacitance, and a high on / off ratio. This allows us to obtain a thin film transistor with good dynamic characteristics. This makes it possible to provide a semiconductor device having a thin-film transistor with high thermal characteristics and high reliability. . [Brief explanation of the drawing]

[0037] [Figure 1] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 2] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 3] A diagram illustrating a method for manufacturing one embodiment of the present invention. [Figure 4] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 5] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 6] A diagram illustrating the block diagram of a semiconductor device. [Figure 7] A diagram illustrating the configuration of a signal line drive circuit. [Figure 8] A timing chart illustrating the operation of a signal line drive circuit. [Figure 9] A timing chart illustrating the operation of a signal line drive circuit. [Figure 10] A diagram illustrating the configuration of a shift register. [Figure 11] Figure 10 illustrates the connection configuration of the flip-flops shown. [Figure 12] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 13] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 14] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 15] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 16] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 17] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 18] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 19] A diagram illustrating one embodiment of the present invention: a semiconductor device. [Figure 20] A diagram illustrating examples of how electronic paper can be used. [Figure 21] An external view showing an example of an e-book. [Figure 22] External view showing examples of television equipment and digital photo frames. [Figure 23] An external view showing an example of a gaming machine. [Figure 24] An external view showing an example of a mobile phone. [Figure 25] A diagram illustrating the relationship between hole mobility and carrier concentration. [Modes for carrying out the invention]

[0038] Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention will not be described in the following description. The present invention is not limited to, and its form and details may vary without departing from the spirit and scope of the present invention. Those skilled in the art will readily understand that this can be changed. Therefore, the present invention can be implemented as follows: The description of the form is not to be interpreted as being limited to the content of the description. Furthermore, the structure of the present invention described below In the design, the same reference numeral is used for identical parts or parts with similar functions across different drawings. It is used in this way, and the explanation of its repetition is omitted.

[0039] (Embodiment 1) In this embodiment, the thin-film transistor and its fabrication process are described using Figures 1 and 2. explain.

[0040] A thin film to a type of bottom gate structure (also called a bottom contact structure) of this embodiment Rangistas 171a and 171b are shown in Figures 1 and 2. Figure 1(A) is a plan view, and Figure 1 (B) is a cross-sectional view along the line A1-A2 in Figure 1(A).

[0041] In Figure 1, a gate electrode layer 101, a gate insulating layer 102, and a source electrode are arranged on the substrate 100. Layers or drain electrode layers 105a, 105b, buffer layer 104a having an n-type conductivity, A thin-film transistor 171a having 104b and a semiconductor layer 103 is provided.

[0042] An oxide semiconductor film containing In, Ga, and Zn is used as the semiconductor layer 103, and the source electrode layer or between drain electrode layers 105a, 105b and semiconductor layer 103 which is an IGZO semiconductor layer Furthermore, buffer layers 104a and 104b with higher carrier concentrations than semiconductor layer 103 are intentionally placed. By providing this, an ohmic contact is formed.

[0043] The buffer layers 104a and 104b are In, Ga, and Zn, which have n-type conductivity. An oxide semiconductor film containing impurities is used. It may contain elements. For example, magnesium, aluminum, titanium, Iron, tin, calcium, germanium, scandium, yttrium, zirconium, HAF Aluminum, boron, thallium, lead, etc. can be used. Magnesium, aluminum When titanium or other materials are included in the buffer layer, it has an oxygen blocking effect, and after film formation... The oxygen concentration of the semiconductor layer can be maintained within an optimal range through heat treatment or other methods.

[0044] In this invention, the carrier concentration range of the semiconductor layer is 1 × 10 17 atoms / cm 3 less than( Better 1 × 10 11 atoms / cm 3 (The above) Buffer layer carrier concentration range is 1 × 10 18 atoms / cm 3 (1 x 10) 22 atoms / cm 3 The following are preferred It seems so.

[0045] When the carrier concentration range of the IGZO film for the channel exceeds the above range, the thin-film transistor and This could lead to the normal-on state. Therefore, half of the IGZO film within the carrier concentration range mentioned above. By using it as a channel in the conductive layer, a highly reliable thin-film transistor can be created. .

[0046] Furthermore, between the semiconductor layer and the buffer layer, the carrier concentration is higher than that of the buffer layer which functions as an n-layer. If a second buffer layer is provided, which has a lower carrier concentration than the semiconductor layer, the second buffer If the carrier concentration of the A layer is set to the concentration range between the carrier concentrations of the semiconductor layer and the buffer layer, then... stomach.

[0047] Buffer layers 104a and 104b function as n+ layers, and are either drain or source regions. It can also be called that.

[0048] The method for fabricating the thin-film transistor 171a shown in Figures 1(A) and 1(B) is shown in Figures 3(A) to 3(E). ) will be used to explain.

[0049] A gate electrode layer 101, a gate insulating layer 102, and a conductive film 117 are formed on the substrate 100 (Figure See 3(A). The substrate 100 is made of barium borosilicate glass, aluminoborosilicate glass. Made from materials such as glass or aluminosilicate glass, produced by fusion or float processes. In addition to alkali-free glass substrates and ceramic substrates, heat resistance that can withstand the processing temperature of this manufacturing process is also required. Plastic substrates and the like can be used. Also, metal substrates such as stainless steel alloys can be used. A substrate with an insulating film on its surface may also be used. The size of substrate 100 is 320mm x 4 00mm, 370mm×470mm, 550mm×650mm, 600mm×720mm 680mm x 880mm, 730mm x 920mm, 1000mm x 1200mm, 1 100mm x 1250mm, 1150mm x 1300mm, 1500mm x 1800mm , 1900mm x 2200mm, 2160mm x 2460mm, 2400mm x 2800 You can use mm, or dimensions such as 2850mm x 3050mm.

[0050] Alternatively, an insulating film may be formed on the substrate 100 as an underlayer. The underlayer can be formed using methods such as CVD or Using sputtering or similar methods, silicon oxide film, silicon nitride film, silicon oxide nitride film, or silicon oxide nitride It can be formed as a single layer or a stack of films.

[0051] The gate electrode layer 101 is made of titanium, molybdenum, chromium, tantalum, tungsten, and aluminum. It is formed using a metallic material such as nium or an alloy material thereof. The gate electrode layer 101 is made of A conductive film is formed on the substrate 100 by the putter method or vacuum deposition method, and photolithography is applied to the conductive film. A mask is formed by phi technology or inkjet method, and a conductive film is applied using the mask. It can be formed by etching. Also, conductive nanoparticles such as silver, gold, and copper can be used. The gate electrode layer 101 is formed by extruding and firing using an inkjet method. This can be done. Furthermore, the adhesion of the gate electrode layer 101 and the substrate of the gate electrode layer 101 material As a barrier metal to prevent diffusion into the underlying film, a nitride film of the above-mentioned metal material is applied to the substrate 100 and It may be provided between the gate electrode layers 101. Also, the gate electrode layer 101 may have a single-layer structure. A laminated structure is also possible; for example, a molybdenum film and an aluminum film can be laminated from the substrate 100 side. Lamination of molybdenum film and aluminum and neodymium alloy film, titanium film and aluminum Lamination with films, lamination with titanium films, aluminum films, and titanium films can be used. .

[0052] Furthermore, since semiconductor films and wiring are formed on the gate electrode layer 101, the edges are designed to prevent breaks. It is desirable to process it so that it becomes tapered.

[0053] The gate insulating layer 102 is formed using methods such as CVD or sputtering, and consists of silicon oxide film, silicon nitride film, and acid It can be formed with a silicon nitride film or a silicon oxide nitride film. The thin film transient shown in Figure 2 Model 171b is an example in which the gate insulating layer 102 is laminated.

[0054] The gate insulating layer 102 consists of a silicon nitride film or a silicon nitride oxide film, and a silicon oxide film or an oxide film. It can be formed by laminating a silicon nitride film in that order. Note that the gate insulating layer does not need to be two layers. From the substrate side, a silicon nitride film or silicon nitride oxide film, a silicon oxide film or silicon oxide nitride film, and nitrogen It can be formed by laminating three layers in the order of silicon dioxide film or silicon nitride oxide film. The insulating layer is a single layer of silicon oxide film, silicon nitride film, silicon oxide nitride film, or silicon nitride oxide film. It can be formed.

[0055] Furthermore, the gate insulating layer 102 is exposed to an oxygen atmosphere (or an atmosphere with 90% or more oxygen, a noble gas (argon, or It is preferable to form the film with helium (10% or less).

[0056] Furthermore, as the gate insulating layer 102, a nitrided layer is formed on the gate electrode layer 101 by plasma CVD. A silicon film may be formed, and a silicon oxide film may be laminated on the silicon nitride film by sputtering. By the CVD method, a silicon nitride film and a silicon oxide film are sequentially laminated on the gate electrode layer 101, and silicon oxide film is deposited. A silicon oxide film may be further laminated on the substrate film by sputtering.

[0057] In this specification, a silicon oxide nitride film is defined as a film whose composition contains more oxygen than nitrogen. It is a method called Rutherford Backscattering (RBS). Cattering Spectrometry and Hydrogen Forward Scattering (HFS) When measured using rogen (forward scattering), the concentration range The composition is approximately 50-70 atomic percent oxygen, 0.5-15 atomic percent nitrogen, and 25-35 atomic percent silicon. This refers to materials containing hydrogen in the range of 0.1 to 10 atomic percent. Furthermore, silicon nitride oxide film is... Its composition is such that the nitrogen content is higher than the oxygen content, and RBS and HFS are used. When measured, the concentration range is 5-30 atomic percent for oxygen, 20-55 atomic percent for nitrogen, and S This refers to substances containing 25-35 atomic percent of i and 10-30 atomic percent of hydrogen. However, acid When the total amount of atoms constituting the silicon nitride film or silicon nitride oxide film is taken as 100 atomic%, The content ratios of element, oxygen, silicon, and hydrogen shall be within the above range.

[0058] Furthermore, the gate insulating layer 102 is made of an oxide of aluminum, yttrium, or hafnium. A substance, nitride, oxidized nitride, or a type of nitride oxide or a compound thereof, containing at least two of these. Compounds containing the above components can also be used.

[0059] Furthermore, the gate insulating layer 102 may contain halogen elements such as chlorine and fluorine. The concentration of halogen elements in the insulating layer 102 is 1 × 10⁻⁶ at the concentration peak. 15 atoms / cm 3 The above 1 x 10 20 atoms / cm 3 The following is correct.

[0060] The conductive film 117 is made of aluminum, or copper, silicon, titanium, neodymium, or scandium. Aluminum to which heat-resistant elements such as molybdenum or hillock-preventing elements have been added. It is preferable to form it as a single layer or laminate of the alloy. Also, the n-type formed in a later process. The film in contact with the conductive semiconductor film is made of titanium, tantalum, molybdenum, or tungsten. Formed from aluminum, or nitrides of these elements, with aluminum or aluminum alloy on top. It may also be a layered structure formed from gold. Furthermore, on top of aluminum or an aluminum alloy... The front and bottom surfaces are made of titanium, tantalum, molybdenum, tungsten, or nitrogen of these elements. A laminated structure sandwiched between oxides may also be used. Here, the conductive film 117 is a titanium film, aluminum A laminated conductive film of a nium film and a titanium film is used.

[0061] Using a layered structure of titanium film, aluminum film, and titanium film results in low resistance, and aluminum Hillocks are less likely to form in the membrane.

[0062] The conductive film 117 is formed by sputtering or vacuum deposition. The conductive film 117 is made of silver, gold, Using conductive nanopastes such as copper, the material is printed using screen printing, inkjet printing, etc. It can also be formed by firing it out of the oven.

[0063] Next, a mask 118 is formed on the conductive film 117, and etching is performed using the mask 118. The film 117 is processed to form the source electrode layer or drain electrode layer 105a, 105b. See Figure 3(B).

[0064] Next, remove the mask 118 and on the source electrode layer or drain electrode layers 105a, 105b The n-type conductivity is an oxide semiconductor film containing In, Ga, and Zn having an n-type conductivity. A semiconductor film having the following characteristics is formed. For example, using IGZO as the first target, an n-type conductive film is formed. A material having the following properties is used as the second target, and simultaneously, a film is deposited using the sputtering method (co-sputtering). A mixed film may be formed by taring and used as a buffer layer. Here, The top and side surfaces of the source electrode layer or drain electrode layer 105a, 105b are of type n conductivity. A semiconductor film having n-type conductivity is covered with a semiconductor film having an n-type conductivity, and the source electrode layer or drain The electrode layers 105a and 105b can be protected.

[0065] Next, a mask 116 is formed on a semiconductor film having an n-type conductivity, and the mask 116 is used A semiconductor film having an n-type conductivity is processed by etching, and an n-type semiconductor layer 115a, 1 Form 15b (see Figure 3(C)). Here, the source electrode layer or drain electrode layer 1 To protect 05a and 105b, the source electrode layer or The pattern shape covers the drain electrode layers 105a and 105b. However, see Figure 3(C). The pattern shape is not limited to the one shown, but also applies to the source electrode layer or drain electrode layer 105a, 105b In this configuration, at least the side closest to the gate electrode is covered with a semiconductor film having an n-type conductivity. It is necessary, but the side furthest from the gate electrode does not necessarily need to be covered. Source electrode layer or In the drain electrode layers 105a and 105b, the side surface closer to the gate electrode is of the n-type conductivity. If not covered with a semiconductor film having channels, the sides are in direct contact with the IGZO film that forms channels. This can lead to the formation of a Schottky junction, potentially increasing contact resistance.

[0066] Furthermore, n-type semiconductors formed by etching, which processes semiconductor films having n-type conductivity. The spacing between layers 115a and 115b becomes the channel length of the thin-film transistor. n-type semiconductor layer 1 If the distance between 15a and 115b is constant, and that distance is located above the gate electrode, Because nearly the same electrical characteristics can be obtained even if misalignment occurs, thin-film transistors This can reduce the amount of etching. Also, the spacing between the n-type semiconductor layers 115a and 115b is etched. It can be freely determined by the conditions. Conventional thin-film transistors have a source electrode layer and The spacing between the drain electrode layers determines the channel length, but this can easily lead to the formation of highly conductive metal films or hillocks. Because a metal film is used, if the gap between the source electrode layer and the drain electrode layer is narrow, There was a risk of it happening.

[0067] Next, the mask 116 is removed, and the semiconductor film 111 is placed on the n-type semiconductor layers 115a and 115b. It forms (see Figure 3(D)).

[0068] As the semiconductor film 111, an oxide semiconductor film containing In, Ga, and Zn is formed. For example, as the semiconductor film 111, an oxide semiconductor containing In, Ga, and Zn is produced using the sputtering method. A conductive film should be formed with a thickness of 50 nm. The semiconductor film 111 is formed under an oxygen atmosphere (or oxygen 90 It is preferable to form the film with a concentration of % or more and a noble gas (such as argon or helium) of 10% or less. .

[0069] Other methods for oxide semiconductor films, such as semiconductor film 111 and semiconductor films with n-type conductivity, besides sputtering. Other film deposition methods include pulsed laser deposition (PLD) and electron beam deposition. The following gas-phase method can be used. Among gas-phase methods, the following is particularly useful for controlling the composition of the material system: From the perspective of mass production, the sputtering method is more suitable than the PLD method, as mentioned above.

[0070] As an example of specific film deposition conditions for the semiconductor film 111, a film with a diameter of 8 inches made of In, Ga, and Zn... Using an oxide semiconductor target, the distance between the substrate and the target is 170 mm, and pressure The film is deposited under a force of 0.4 Pa, a DC power supply of 0.5 kW, and in an argon or oxygen atmosphere. This is possible. Furthermore, using a pulsed DC power supply can reduce dust and ensure a uniform film thickness distribution. This is preferable.

[0071] Next, a mask 113 is formed for processing the semiconductor film 111 (see Figure 3(E)). By etching the semiconductor film 111 using the squeegee 113, a semiconductor layer 103 is formed. It is possible.

[0072] Furthermore, using the same mask 113, the buffer layers 104a and 104b are formed by etching. Therefore, as shown in Figure 1, the edges of the semiconductor layer 103 and the buffer layers 104a, 10 The edges of 4b will have a nearly identical shape. Note that the semiconductor film 111 and the n-type semiconductor layer 115a, For etching IGZO semiconductor films such as 115b, organic acids such as citric acid and oxalic acid are used. It can be used as an etchant. For example, a 50nm semiconductor film 111 is ITO07N Etching can be done in 150 seconds using (manufactured by Kanto Chemical Co., Ltd.).

[0073] Furthermore, by etching the edges of the semiconductor layer 103 into a tapered shape, a stepped shape can be created. This prevents the wiring from being interrupted at the steps.

[0074] Next, the mask 113 is removed. Through the above steps, the thin-film transistor 171a is formed. This is possible. Note that the channel length L of the thin-film transistor 171a is the n-type semiconductor layer 1 This corresponds to the spacing between 15a and 115b (the spacing between buffer layers 104a and 104b). Therefore, Without changing the spacing between the n-type semiconductor layers 115a and 115b, the source electrode layer or drain electrode layer 1 The spacing between 05a and 105b can be widened. Source electrode layer or drain electrode layer 10 By widening the gap between 5a and 105b, hillocks are generated and the source electrode layer and drain This prevents short circuits from occurring between the electrode layers. Also, the source electrode layer or drain By widening the gap between the in electrode layers 105a and 105b, the area overlapping with the gate electrode is increased. Because it can be reduced in size and the parasitic capacitance with the gate electrode can be reduced, good dynamic characteristics can be achieved, for example, high Thin-film transistors with a high frequency response (called the f-response) can be realized.

[0075] Furthermore, an insulating film may be formed on the thin-film transistor 171a as a protective film. It can be formed in the same way as the gate insulating layer. The protective film is suspended in the atmosphere. It is intended to prevent the intrusion of contaminants such as organic matter, metals, and water vapor, and a dense film is preferred. For example, a silicon oxide film and a silicon nitride film as protective films on a thin-film transistor 171a A layered structure can be formed.

[0076] Furthermore, the oxide semiconductor films such as the semiconductor layer 103 and buffer layers 104a and 104b are formed. It is preferable to perform a heat treatment afterward. The heat treatment can be performed at any step after film formation. However, this can be done immediately after film formation, after the protective film has formed, etc. It can also be performed in conjunction with other heat treatments. It is also acceptable to do so. Furthermore, the heating temperature should be between 300°C and 400°C, preferably 350°C. The heat treatment is performed multiple times in separate processes for the semiconductor layer 103 and the buffer layers 104a and 104b. That's good too.

[0077] Furthermore, the fabrication process for the thin-film transistor 171b shown in Figure 2 will be explained using Figure 3. The fabrication process for the thin-film transistor 171b shown in Figure 2 is the same as that for the thin-film transistor 171b shown in Figure 1(B). Since the manufacturing process differs only slightly from 1a, those differences will be explained below.

[0078] In Figure 2, the difference from Figure 1(B) is that the gate insulating layer 102 has two layers, and the buffer layer The difference lies in the fact that the position of the edges differs from the position of the edges of the semiconductor layer.

[0079] When etching using the mask 113 shown in Figure 3(E), only the semiconductor layer 103 is selectively etched. When etched, leaving the n-type semiconductor layers 115a and 115b intact, the thin film transistor shown in Figure 2 is obtained. ZISTA 171b can be obtained. In Figure 2, n-type semiconductor layers 115a and 115b This functions as a buffer layer. In addition, an interlayer insulating film is further applied on the thin-film transistor 171b. When forming and creating wiring on the interlayer insulating film, an n-type semiconductor layer is formed at the bottom of the contact hole. Even if 115a and 115b remain, the wiring and the source electrode layer and drain electrode layer This allows for a good electrical connection.

[0080] In this embodiment, the gate electrode layer, gate insulating layer, source electrode layer and drain electrode layer, A buffer layer (an oxide semiconductor layer containing In, Ga, and Zn and having an n-type conductivity), semiconductor Thin film transient having a stacked structure of layers (oxide semiconductor layers containing In, Ga, and Zn) As a base, it is an oxide semiconductor layer having an n-type conductivity, containing In, Ga, and Zn. By using a buffer layer with a high carrier concentration, the thickness of the semiconductor layer can be kept thin. Furthermore, parasitic capacitance can be suppressed. Note that even if the buffer layer is a thin film, the gate insulating layer... Because the proportion is sufficient, the parasitic capacity is adequately suppressed.

[0081] This embodiment provides a thin-film transistor with low photocurrent, low parasitic capacitance, and a high on / off ratio. This allows us to obtain transistors and fabricate thin-film transistors with good dynamic characteristics. Therefore, to provide a semiconductor device having a thin-film transistor with high electrical characteristics and good reliability. can.

[0082] (Embodiment 2) This embodiment is an example of a thin-film transistor with a multi-gate structure according to one embodiment of the present invention. The rest can be carried out in the same manner as in Embodiment 1, and the same parts or similar mechanisms as in Embodiment 1 can be used. The explanation of the functional parts and the repetition of the process will be omitted.

[0083] In this embodiment, the thin-film transistor used in the semiconductor device is shown in Figure 4(A)(B This will be explained using Figures 5(A) and 5(B).

[0084] Figure 4(A) is a plan view showing a thin-film transistor, and Figure 4(B) is a plan view of Figure 4(A) This corresponds to a cross-sectional view showing the thin-film transistor 172a along line E1-E2.

[0085] As shown in Figures 4(A) and 4(B), gate electrode layers 151a, 151b, and gate electrode layers are placed on the substrate 150. Insulating layer 152, source electrode layer or drain electrode layer 155a, 155b, buffer layer 1 54a, 154b, 154c, including the channel formation regions 153a, 153b of the semiconductor layer A thin-film transistor 172a with a lutigate structure is provided. In the thin-film transistor 172a, the first channel length L1 is defined as the buffer layer 154a. Corresponding to an interval of 154c, the second channel length L2 is between buffer layers 154b and 154c. It corresponds to a distance.

[0086] The channel formation regions 153a and 153b of the semiconductor layer are oxides containing In, Ga, and Zn. It is a semiconductor layer, and the buffer layers 154a, 154b, and 154c have an n-type conductivity. This is an oxide semiconductor layer containing Ga and Zn. Source region or drain region (n+ layer) The buffer layers 154a and 154b, which function as buffer layers, are located in the channel formation region 153a of the semiconductor layer. The carrier concentration is higher than that of 153b.

[0087] The channel formation region 153a of the semiconductor layer and the channel formation region 153b of the semiconductor layer are electrically They are connected in a specific way. Also, the channel formation region 153a of the semiconductor layer is connected to the buffer layer 154a. The source electrode layer or drain electrode layer 155a and the channel formation region 153 of the semiconductor layer are connected via b is electrically connected to the source electrode layer or drain electrode layer 155b via the buffer layer 154b. It continues.

[0088] Figure 5 shows thin-film transistor 172b with a multi-gate structure in a different configuration. Figure 5(A) is This is a plan view of thin-film transistor 172b, and Figure 5(B) shows the line F in Figure 5(A). This corresponds to a cross-sectional view showing thin-film transistor 172b of 1-F2. Thin-film transistor in Figure 5 In 172b, the semiconductor layer is divided into multiple layers, including a source electrode layer or a drain electrode layer. A wiring layer 156 is provided, which is formed in the same process as 155a and 155b, and a semiconductor layer 153c and The semiconductor layer 153d is electrically connected to the wiring layer 156 via buffer layers 154c and 154d. They are connected.

[0089] In addition, in the thin-film transistor 172b with a multi-gate structure, the first channel length L1 is This corresponds to the spacing between buffer layers 154a and 154c, and the second channel length L2 is the buffer layer This corresponds to the interval between 154b and 154d.

[0090] Thus, in one embodiment of the present invention, a thin-film transistor with a multi-gate structure, each gate The semiconductor layer formed on the electrode layer may be arranged continuously, or a buffer layer and a wiring layer may be provided. Multiple semiconductor layers may be electrically connected and provided via such means.

[0091] One embodiment of the present invention is a thin-film transistor with a multi-gate structure that has low off-current, and Semiconductor devices containing thin-film transistors can be provided with high electrical characteristics and high reliability. ru.

[0092] In this embodiment, the multi-gate structure is an example of a double-gate structure with two gate electrode layers. However, one embodiment of the present invention is a triple gate structure having more gate electrode layers, etc. This can also be applied.

[0093] This embodiment can be implemented in appropriate combination with other embodiments.

[0094] (Embodiment 3) In this embodiment, in a display device which is an example of a semiconductor device according to one embodiment of the present invention, the same base This is an example of fabricating at least part of the driving circuit and thin-film transistors to be placed in the pixel area on a plate. This will be explained below.

[0095] The thin-film transistors placed in the pixel area are formed according to Embodiment 1 or Embodiment 2. Furthermore, the thin-film transistor shown in Embodiment 1 or Embodiment 2 is an n-channel type TF. Since T, among the drive circuits, the drive circuits that can be constructed with n-channel TFTs A portion of it is formed on the same substrate as the thin-film transistors in the pixel section.

[0096] Block of an active matrix liquid crystal display device, which is an example of a semiconductor device according to one embodiment of the present invention An example of the diagram is shown in Figure 6(A). The display device shown in Figure 6(A) has a display element on the substrate 5300. A pixel section 5301 having multiple pixels with children, and a scan line driving circuit 530 that selects each pixel. It comprises 2 and a signal line driving circuit 5303 that controls the input of a video signal to the selected pixel. ru.

[0097] Furthermore, the thin-film transistor shown in either Embodiment 1 or Embodiment 2 is n-channel. Figure 7 shows a signal line driving circuit that is a Nell-type TFT and consists of n-channel TFTs. I will explain.

[0098] The signal line drive circuit shown in Figure 7 consists of driver IC 5601 and switch group 5602_1~560 2_M, first wiring 5611, second wiring 5612, third wiring 5613 and wiring 562 It has 1_1~5621_M. Each of the switch groups 5602_1~5602_M is The first thin-film transistor 5603a, the second thin-film transistor 5603b, and the third thin-film transistor It has a Rangista 5603c.

[0099] Driver IC 5601 has the first wire 5611, the second wire 5612, and the third wire 5613 And it is connected to wiring 5621_1~5621_M. And the switch group 5602_1~ Each of the 5602_M components is the first wiring 5611, the second wiring 5612, and the third wiring 561 Wiring 5621_1~5 corresponding to 3 and switch groups 5602_1~5602_M It is connected to 621_M. And each of the wires 5621_1~5621_M is the first Thin-film transistor 5603a, second thin-film transistor 5603b and third thin-film transistor It is connected to three signal lines via the ZISTA 5603c. For example, wiring 5621 in column J. _J (any one of the wirings 5621_1 to 5621_M) is for switch group 5602 _J possesses the first thin-film transistor 5603a, the second thin-film transistor 5603b and And via the third thin-film transistor 5603c, signal line Sj-1, signal line Sj, signal line S Connects to j+1

[0100] Furthermore, the first wiring 5611, the second wiring 5612, and the third wiring 5613 are each connected to a signal The number is entered.

[0101] Furthermore, it is preferable that the driver IC 5601 be formed on a single-crystal substrate. The switch groups 5602_1 to 5602_M are formed on the same substrate as the pixel section. This is desirable. Therefore, the driver IC 5601 and the switch group 5602_1~5602_ It is best to connect to M via an FPC or similar device.

[0102] Next, regarding the operation of the signal line drive circuit shown in Figure 7, refer to the timing chart in Figure 8. Let me explain. Note that in the timing chart of Figure 8, the scan line Gi of the i-th row is selected. The timing chart for the case is shown. Furthermore, the selection period for scan line Gi in the i-th row is the The period is divided into three sub-selection periods: the first sub-selection period T1, the second sub-selection period T2, and the third sub-selection period T3. Furthermore, the signal line driving circuit in Figure 7 is also shown when other rows of scan lines are selected. It performs the same function as 8.

[0103] Note that in the timing chart of Figure 8, wiring 5621_J in column J is the first thin-film transient. Transistor 5603a, second thin-film transistor 5603b, and third thin-film transistor 5603 This shows the case where the signal lines Sj-1, Sj, and Sj+1 are connected via c. They are doing it.

[0104] Note that the timing chart in Figure 8 shows the timing at which the scan line Gi of the i-th row is selected, and the first The on / off timing of the thin-film transistor 5603a, 5703a, and the second thin-film transistor On / off timing of transistor 5603b, 5703b, third thin-film transistor 560 The signal input to the wiring of column J, 5621_J, controls the on / off timing of 3c 5703c and J. This indicates item number 5721_J.

[0105] Note that wiring 5621_1 to wiring 5621_M have a first sub-selection period T1 and a second sub-selection period. During the selection period T2 and the third sub-selection period T3, different video signals are input. For example, the video signal input to wiring 5621_J during the first sub-selection period T1 is It is input to signal line Sj-1 and input to wiring 5621_J during the second sub-selection period T2. The video signal is input to signal line Sj, and during the third sub-selection period T3, wiring 5621 The video signal input to _J is input to signal line Sj+1. Furthermore, the first sub-selection period During interval T1, the second sub-selection period T2, and the third sub-selection period T3, wiring 5621_ The video signals input to J are Data_j-1, Data_j, and Data_j+ respectively. Let's set it to 1.

[0106] As shown in Figure 8, during the first subselection period T1, the first thin-film transistor 5603a When it turns on, the second thin-film transistor 5603b and the third thin-film transistor 5603c Turn it off. At this time, Data_j-1 input to wiring 5621_J is the first thin film The signal is input to signal line Sj-1 via transistor 5603a. During the second sub-selection period T2... This turns on the second thin-film transistor 5603b, and the first thin-film transistor 5603a and The third thin-film transistor 5603c turns off. At this time, the input to wiring 5621_J is The data_j is input to the signal line Sj via the second thin-film transistor 5603b. During the third subselection period T3, the third thin-film transistor 5603c is turned on, and the first Thin-film transistor 5603a and the second thin-film transistor 5603b are turned off. The Data_j+1 input to wiring 5621_J is then transmitted to the third thin-film transistor 560 It is input to signal line Sj+1 via 3c.

[0107] From the above, the signal line drive circuit in Figure 7 divides the 1-gate selection period into three parts, During the 1-gate selection period, input the video signal to three signal lines from one wiring 5621. Therefore, the signal line driving circuit in Figure 7 is formed on the base where the driver IC 5601 is located. The number of connections between the board and the substrate on which the pixels are formed should be reduced to approximately 1 / 3 of the number of signal lines. This is possible. By reducing the number of connections to approximately 1 / 3, the signal line drive circuit in Figure 7 improves reliability and speed. It can improve things like staying put.

[0108] Furthermore, as shown in Figure 7, the 1-gate selection period is divided into multiple sub-selection periods, and multiple sub-selection During each period, a video signal is input to multiple signal lines from a single wiring harness. If this is possible, the arrangement, number, and driving method of the thin-film transistors are not limited.

[0109] For example, in each of three or more sub-selection periods, three or more signal lines are routed from one wire. When a video signal is input to each, the thin-film transistor and the thin-film transistor are controlled. You just need to add some wiring for that. However, if you divide the 1-gate selection period into 4 or more sub-selection periods... When divided, the duration of one sub-selection period becomes shorter. Therefore, the duration of one gate selection period is two or It is desirable to divide the period into three sub-selection periods.

[0110] As another example, as shown in the timing chart in Figure 9, one selection period is precharged. Period Tp, first sub-selection period T1, second sub-selection period T2, third sub-selection period T3 It may also be divided into. Furthermore, in the timing chart of Figure 9, the scan line Gi of the i-th row is selected. The timing of the on / off of the first thin-film transistor 5603a, 5803 a. On / off timing of the second thin-film transistor 5603b 5803b, third thin On / off timing of film transistor 5603c, 5803c and wiring in column J 562 This shows the signal 5821_J input to 1_J. As shown in Figure 9, pre-charge period At the interval Tp, the first thin-film transistor 5603a and the second thin-film transistor 5603b And the third thin-film transistor 5603c turns on. At this time, the input is connected to wiring 5621_J. The precharge voltage Vp is applied to the first thin-film transistor 5603a and the second thin-film transistor Signal line Sj-1 is transmitted via transistor 5603b and the third thin-film transistor 5603c, respectively. The signal is input to signal line Sj and signal line Sj+1. In the first sub-selection period T1, the first thin The film transistor 5603a turns on, and the second thin-film transistor 5603b and the third thin film... Transistor 5603c turns off. At this time, the data input to wire 5621_J is _j-1 is input to signal line Sj-1 via the first thin-film transistor 5603a. During the second subselection period T2, the second thin-film transistor 5603b is turned on, and the first thin film Transistor 5603a and the third thin-film transistor 5603c are turned off. At this time, Data_j input to wiring 5621_J is transmitted via the second thin-film transistor 5603b. This is then input to the signal line Sj. During the third subselection period T3, the third thin-film transistor 5 603c turns on, and the first thin-film transistor 5603a and the second thin-film transistor 56 03b turns off. At this time, Data_j+1 input to wiring 5621_J becomes the third The signal is input to the signal line Sj+1 via the thin-film transistor 5603c.

[0111] Based on the above, the signal line drive circuit in Figure 7 to which the timing chart in Figure 9 is applied is subselective. By establishing a pre-charge selection period before the selection period, the signal lines can be pre-charged. Therefore, video signals can be written to pixels at high speed. Note that in Figure 9, Similar components to those in Figure 8 are indicated using the same reference numerals, signifying the same part or similar function. Detailed explanations of the parts will be omitted.

[0112] Furthermore, the configuration of the scan line driving circuit will be explained. The scan line driving circuit consists of a shift register and a It has a faucet. It may also have a level shifter in some cases. Scan line drive In the circuit, the shift register receives the clock signal (CLK) and the start pulse signal (SP). A selection signal is generated when the input ) is received. The generated selection signal is buffered It is buffered and amplified and supplied to the corresponding scan line. The scan line contains the pixels for one line. The gate electrode of the transistor is connected. And the transistor for one line of pixels Since they all need to be turned ON at once, the buffer must be capable of handling a large current. It is used.

[0113] Figures 10 and 11 illustrate one form of a shift register used in part of a scan line driving circuit. I will explain.

[0114] Figure 10 shows the circuit configuration of the shift register. Flip-flop 5701_i (any of flip-flops 5701_1 to 5701_n) It consists of a first clock signal, a second clock signal, and a start pulse. It operates when a signal and a reset signal are input.

[0115] The connection relationship of the shift register in Figure 10 will be explained. The shift register in Figure 10 is i-stage Flip-flop 5701_i (Flip-flop 5701_1~5701_n Either (i) is that the first wiring 5501 shown in Figure 11 connects to the seventh wiring 5717_i-1. The second wiring 5502 shown in Figure 11 is connected to the seventh wiring 5717_i+1. The third wiring 5503 shown in Figure 11 is connected to the seventh wiring 5717_i, as shown in Figure 11. The sixth wire 5506 is connected to the fifth wire 5715.

[0116] Furthermore, the fourth wiring 5504 shown in Figure 11 is the second wiring for odd-numbered flip-flops. It is connected to 5712, and in even-numbered flip-flops, it is connected to the third wire 5713. The fifth wiring 5505 shown in Figure 11 is connected to the fourth wiring 5714.

[0117] However, the first wiring 5501 shown in Figure 11 of the first stage flip-flop 5701_1 is Connected to wiring 5711, the nth flip-flop 5701_n shown in Figure 11 Wiring 2, 5502, is connected to wiring 6, 5716.

[0118] Note that the first wiring 5711, the second wiring 5712, the third wiring 5713, and the sixth wiring 57 Even if we call 16 the first signal line, the second signal line, the third signal line, and the fourth signal line, Good. Furthermore, the fourth wire 5714 and the fifth wire 5715 are connected to the first power line and the second power line, respectively. You could also call it the power line 2.

[0119] Next, the details of the flip-flop shown in Figure 10 are shown in Figure 11. The flop consists of a first thin-film transistor 5571, a second thin-film transistor 5572, The third thin-film transistor 5573, the fourth thin-film transistor 5574, and the fifth thin-film transistor Zistor 5575, the sixth thin-film transistor 5576, the seventh thin-film transistor 5577 and It also has an eighth thin-film transistor 5578. Furthermore, the first thin-film transistor 5571, The second thin-film transistor 5572, the third thin-film transistor 5573, and the fourth thin-film transistor Zistor 5574, fifth thin-film transistor 5575, sixth thin-film transistor 5576, The seventh thin-film transistor 5577 and the eighth thin-film transistor 5578 are n-channel type It is a transistor, and when the gate-source voltage (Vgs) exceeds the threshold voltage (Vth) It is assumed that a conductive state is achieved when this occurs.

[0120] Next, the connection configuration of the flip-flops shown in Figure 10 is described below.

[0121] The first electrode (either the source electrode or the drain electrode) of the first thin-film transistor 5571 This is connected to the fourth wiring 5504 and the second electrode (saw) of the first thin-film transistor 5571. The other electrode (either the drain electrode or the other) is connected to the third wiring 5503.

[0122] The first electrode of the second thin film transistor 5572 is connected to the sixth wiring 5506, and the second electrode of the thin film transistor 5572 is connected to the third wiring 5503.

[0123] The first electrode of the third thin film transistor 5573 is connected to the fifth wiring 5505, and the third electrode of the thin film transistor 5573 is connected to the gate electrode of the second thin film transistor 5572 and the gate electrode of the third thin film transistor 5573 is connected to the fifth wiring 5505.

[0124] The first electrode of the fourth thin film transistor 5574 is connected to the sixth wiring 5506, and the fourth electrode of the thin film transistor 5574 is connected to the gate electrode of the second thin film transistor 5572 and the gate electrode of the fourth thin film transistor 5574 is connected to the gate electrode of the first thin film transistor 5 571.

[0125] The first electrode of the fifth thin film transistor 5575 is connected to the fifth wiring 5505, and the fifth electrode of the thin film transistor 5575 is connected to the gate electrode of the first thin film transistor 5571 and the gate electrode of the fifth thin film transistor 5575 is connected to the first wiring 5501.

[0126] The first electrode of the sixth thin film transistor 5576 is connected to the sixth wiring 5506, and the sixth electrode of the thin film transistor 5576 is connected to the gate electrode of the first thin film transistor 5571 and the gate electrode of the sixth thin film transistor 5576 is connected to the gate electrode of the second thin film transistor 5 572.

[0127] The first electrode of the seventh thin film transistor 5577 is connected to the sixth wiring 5506, and the seventh​​ The second electrode of thin-film transistor 5577 is the gate electrode of the first thin-film transistor 5571. The gate electrode of the seventh thin-film transistor 5577 is connected to the second wiring 5502. The first electrode of the eighth thin-film transistor 5578 is connected to the sixth wiring 5506. The second electrode of the eighth thin-film transistor 5578 is connected to the second thin-film transistor 5572. The gate electrode of the eighth thin-film transistor 5578 is connected to the first wiring 550. It connects to 1.

[0128] Note that the gate electrode of the first thin-film transistor 5571 and the fourth thin-film transistor 5574 The gate electrode of the fifth thin-film transistor 5575, the second electrode of the sixth thin-film transistor The connection point between the second electrode of transistor 5576 and the second electrode of thin-film transistor 5577 is Let's call it code 5543. Furthermore, the gate electrode of the second thin-film transistor 5572, and the third thin-film transistor The second electrode of film transistor 5573, the second electrode of the fourth thin film transistor 5574, The gate electrode of the sixth thin-film transistor 5576 and the gate electrode of the eighth thin-film transistor 5578 The connection point of electrode 2 is designated as node 5544.

[0129] Furthermore, the first wiring 5501, the second wiring 5502, the third wiring 5503 and the fourth wiring 5 Let's call 504 the first signal line, the second signal line, the third signal line, and the fourth signal line, respectively. This is also fine. Furthermore, the fifth wire 5505 is the first power line, and the sixth wire 5506 is the second power line. You could call it a line.

[0130] Furthermore, the signal line drive circuit and the scan line drive circuit are shown in Embodiment 1 or Embodiment 2. It is also possible to fabricate it using only channel-type TFTs. As shown in Embodiment 1 or Embodiment 2. Since the mobility of the transistors in the n-channel type TFT is high, the driving frequency of the driving circuit can be increased. In addition, the n-channel type TFT shown in Embodiment 1 or Embodiment 2 has a low parasitic capacitance due to the buffer layer which is an oxide semiconductor layer containing indium, gallium, and zinc having an n-type, and thus has high frequency characteristics (referred to as f characteristics). For example, the scanning line driving circuit using the n-channel type TFT shown in Embodiment 1 or Embodiment 2 can be operated at high speed, so that it is possible to increase the frame frequency or to realize black screen insertion. Furthermore, by increasing the channel width of the transistors in the scanning line driving circuit or by arranging a plurality of scanning line driving circuits, a higher frame frequency can be realized. When arranging a plurality of scanning line driving circuits, the scanning line driving circuit for driving the scanning lines of even rows is arranged on one side, and the scanning line driving circuit for driving the scanning lines of odd rows is arranged on the opposite side, thereby realizing an increase in the frame frequency. Also, when manufacturing an active matrix type light-emitting display device which is an example of the semiconductor device of one form of the present invention, since a plurality of thin film transistors are arranged in at least one pixel, it is preferable to arrange a plurality of scanning line driving circuits. An example of the block diagram of the active matrix type light-emitting display device is shown in FIG. 6(B). The light-emitting display device shown in FIG. 6(B) has a pixel portion 5401 having a plurality of pixels provided with display elements on a substrate 5400, a first scanning line driving circuit 5402 for selecting each pixel, and a second scanning line driving circuit.

[0131]

[0132]

[0133] The motor circuit 5404 and the signal line drive circuit 54 control the input of the video signal to the selected pixel. It has 03.

[0134] When the video signal input to the pixels of the light-emitting display device shown in Figure 6(B) is converted to a digital format. The pixels become either emitting or not emitting light by switching the transistor on and off. Therefore, gradation can be displayed using area gradation or time gradation. The grayscale method divides one pixel into multiple subpixels and drives each subpixel independently based on the video signal. This is a driving method that performs gradation display by causing the pixels to emit light. In addition, the time gradation method is a method where pixels emit light. This is a driving method that performs grayscale display by controlling the duration of the display.

[0135] Because light-emitting elements have a higher response speed compared to liquid crystal elements, they are more suitable for time-gradation methods than liquid crystal elements. Specifically, when displaying using time gradation, one frame period is divided into multiple subframes. The video signal is divided into subframes. Then, according to the video signal, the light-emitting element of each pixel in each subframe period To make the child emit light or not emit light. By dividing it into multiple subframe periods, The total length of time during which a pixel actually emits light during one frame is controlled by the video signal. It can be controlled and grayscale can be displayed.

[0136] In the light-emitting display device shown in Figure 6(B), each pixel has a switching TFT and a current When two TFTs are placed, including a control TFT, the gate wiring of the switching TFT is the first The signal input to the scan line is generated by the first scan line drive circuit 5402, and the current control TFT is generated. The signal input to the second scan line, which is a wired connection, is generated by the second scan line drive circuit 5404. The example shows the signal input to the first scan line and the signal input to the second scan line. The signal and the scan line drive circuit may both be generated by a single scan line drive circuit. Alternatively, for example, The operation of the switching element is controlled by the number of transistors in the switching element. The first scan line used for this purpose may be provided multiple times for each pixel. In this case, multiple The signals input to the first scan line of the number can all be generated by a single scan line drive circuit, It may also be generated by multiple scan line drive circuits.

[0137] Furthermore, in light-emitting display devices, the drive circuit is composed of n-channel TFTs. A portion of the drive circuit can be formed on the same substrate as the thin-film transistors in the pixel section. Furthermore, the signal line drive circuit and the scan line drive circuit are shown in Embodiment 1 or Embodiment 2. It is also possible to fabricate the system using only channel-type TFTs.

[0138] Furthermore, the above-mentioned drive circuit is not limited to liquid crystal displays or light-emitting displays, but also includes switching elements and It may also be used in electronic paper, which drives electronic ink using electrically connected elements. Electronic paper is also called an electrophoretic display device (electrophoretic display), and is the same as paper. Advantages include readability, lower power consumption compared to other display devices, and the ability to create a thin and light form factor. It has a point.

[0139] Electrophoretic displays can take various forms, but one involves a first particle with a positive charge. A microcapsule containing a child and a second particle having a negative charge is placed in a solvent or solute. It is a dispersed substance, and by applying an electric field to the microcapsules, micro Move the particles inside the capsule in opposite directions and display only the color of the particles that have gathered on one side. It is such that the first or second particle contains dye and, in the absence of an electric field, It does not move. Also, the color of the first particle and the color of the second particle are different (colorless). (Includes)

[0140] Thus, electrophoretic displays show that substances with high dielectric constants move to regions with high electric fields. This is a display that utilizes the so-called electrophoretic effect. Electrophoretic displays are liquid crystal displays. The polarizing plate and opposing substrate required for the display device are not needed for the electrophoresis display device, and the thickness and weight are halved. Reduce.

[0141] When the above microcapsules are dispersed in a solvent, it is called an electronic ink. This electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. Color display is also possible by using color filters or particles containing pigments.

[0142] Furthermore, the microphone is placed on the active matrix substrate, appropriately sandwiched between the two electrodes. By arranging multiple microcapsules, an active-matrix type display device can be completed. By applying an electric field to the cell, a display can be created. For example, Embodiment 1 or the embodiment An active matrix substrate obtained by a thin-film transistor of state 2 can be used. ru.

[0143] Furthermore, the first and second particles in the microcapsules are made of conductive material, insulating material, Semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, electro A type of material selected from trochromic materials, magnetophoretic materials, or a composite material thereof Use it.

[0144] Through the above process, a highly reliable display device can be manufactured as a semiconductor device.

[0145] This embodiment can be put into practice by appropriately combining it with the configuration described in Embodiment 1 or Embodiment 2. It is possible to do so.

[0146] (Embodiment 4) A thin-film transistor of one embodiment of the present invention is fabricated, and the thin-film transistor is used in the pixel portion, and furthermore, It is possible to manufacture a semiconductor device (also called a display device) that has a display function by using it in a dynamic circuit. Furthermore, a part or all of a drive circuit using a thin-film transistor according to one embodiment of the present invention may be used. It can be integrally formed on the same substrate as the base components to create a system-on-panel.

[0147] A display device includes display elements. Display elements include liquid crystal elements (also called liquid crystal display elements) and light-emitting elements. A light-emitting element (also called a light-emitting display element) can be used. The light-emitting element is activated by current or voltage. This category includes elements whose brightness is controlled, specifically inorganic EL (Electrical LEDs). This includes Luminescence elements, organic EL elements, etc. Also, electronic inks. Furthermore, display media in which the contrast changes due to electrical effects can also be applied.

[0148] Furthermore, the display device includes a panel in which the display elements are sealed, and a controller on the panel. The present invention includes a module on which ICs and the like are mounted. Furthermore, one embodiment of the present invention is the table Regarding the element substrate, which is a form of the display element before it is completed in the process of manufacturing a display device. Furthermore, the element substrate is provided with means for supplying current to the display element in each of the multiple pixels. Specifically, the substrate may be in a state where only the pixel electrodes of the display elements are formed, or the pixels This is the state after the conductive film that will serve as the electrode has been deposited, but before etching to form the pixel electrode. It's fine if it exists, and all forms are applicable.

[0149] In this specification, the term "display device" refers to an image display device, a display device, or an optical display device. This refers to the power source (including lighting equipment). It also refers to connectors, such as FPC (Flexible Printed Circuit). (inted circuit) or TAB (Tape Automated Bon (ding) tape or TCP (Tape Carrier Package) Modules that have a printed circuit board attached to the end of the TAB tape or TCP. The display element or IC (integrated circuit board) is integrated using the COG (Chip On Glass) method. Modules in which the road is directly implemented are also included in the display device.

[0150] In this embodiment, an example of a liquid crystal display device is shown as a semiconductor device according to one embodiment of the present invention.

[0151] Figures 12(A) and 12(B) show an active-matrix liquid crystal display device to which the present invention is applied. Figure 12(A) is a plan view of the liquid crystal display device, and Figure 12(B) shows the lines in Figure 12(A). This is a cross-sectional view of VX. As a thin-film transistor 201 used in a semiconductor device, It can be fabricated in the same way as the thin-film transistor shown in Form 2, and the IGZO semiconductor layer and n-type conductivity type This is a highly reliable thin-film transistor containing an IGZO semiconductor layer. Furthermore, in its implemented form... The thin-film transistor shown in Form 1 can also be applied as the thin-film transistor 201 in this embodiment. Cut.

[0152] The liquid crystal display device of this embodiment shown in Figure 12(A) has a source wiring layer 202 and a multi-gate structure. It includes a thin-film transistor 201, a gate wiring layer 203, and a capacitive wiring layer 204.

[0153] Furthermore, in Figure 12(B), the liquid crystal display device of this embodiment is a thin film with a multi-gate structure. Transistor 201, insulating layer 211, insulating layer 212, insulating layer 213, and used in display elements A substrate 2 is provided with an electrode layer 255, an insulating layer 261 that functions as an alignment film, and a polarizing plate 268. 00, an insulating layer 263 that functions as an alignment film, an electrode layer 265 used for the display element, and a color film A substrate 266 on which a colored layer 264 that functions as a filter and a polarizing plate 267 are provided is the liquid crystal layer 2 62 is sandwiched between them and facing each other, and has a liquid crystal display element 260.

[0154] Alternatively, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases. Yes, as the temperature of a cholesteric liquid crystal is increased, it transitions from the cholesteric phase to the isotropic phase. This is the phase that appears earlier. The blue phase only appears within a narrow temperature range, so improving the temperature range is necessary. To achieve this, a liquid crystal composition containing 5% or more by weight of a chiral agent is used in the liquid crystal layer 262. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs to 1 With a short duration of 00 μs and optical isotropy, orientation processing is unnecessary, and it exhibits low dependence on the viewing angle. .

[0155] Although Figure 12 shows an example of a transmissive liquid crystal display device, one embodiment of the present invention is a reflective liquid crystal display device. This can also be applied to semi-transmissive liquid crystal display devices.

[0156] Furthermore, in the liquid crystal display device shown in Figure 12, a polarizing plate 267 is provided on the outside (viewing side) of the substrate 266. An example is shown in which a colored layer 264 and an electrode layer 265 used for the display element are arranged in that order on the inside, but polarization The plate 267 may be provided inside the substrate 266. Also, the laminated structure of the polarizing plate and the colored layer is shown in Figure 12. It is not limited to B, and can be set appropriately depending on the materials and manufacturing process conditions of the polarizing plate and colored layer. Additionally, a light-shielding film that functions as a black matrix may be provided.

[0157] Furthermore, in this embodiment, in order to reduce surface irregularities of the thin-film transistor, and thin-film transistor To improve the reliability of the transistor, the thin-film transistor obtained in Embodiment 2 is fitted with a protective film or Covered with insulating layers (insulating layer 211, insulating layer 212, insulating layer 213) that function as a planar insulating film. The structure is as follows. The protective film is designed to protect against organic matter, metallic substances, water vapor, and other substances suspended in the atmosphere. The purpose is to prevent the intrusion of contaminating impurities, and a dense film is preferred. The protective film is made by CVD. Alternatively, using sputtering or similar methods, silicon oxide film, silicon nitride film, silicon oxidnitride film, or nitride acid It can be formed as a single layer or multiple layers of silicon dioxide film. In addition, as a protective film, an organic solvent can be added to the process gas. A silicon oxide film may be formed using plasma CVD with silane gas and oxygen.

[0158] Organic silanes include ethyl silicate (TEOS: chemical formula Si(OC2H5)4) and tetramethyl Silane (TMS: chemical formula Si(CH3)4), tetramethylcyclotetrasiloxane (T MCTS), Octamethylcyclotetrasiloxane (OMCTS), Hexamethyldisil Zan (HMDS), Triethoxysilane (SiH(OC2H5)3), or Trisujime These are compounds such as tylaminosilane (SiH(N(CH3)2)3).

[0159] An insulating layer 211 is formed as the first layer of the protective film. The insulating layer 211 is made of aluminum film. It is effective in preventing corrosion. Here, the insulating layer 211 is oxidized using the plasma CVD method. A silicon film is formed. TEOS and O2 are used as process gases for forming the silicon oxide film. The flow rate is TEOS \O2 = 15 \750 (sccm). Substrate temperature during the film deposition process. It is 300℃.

[0160] Furthermore, an insulating layer 212 is formed as the second layer of the protective film. Here, the insulating layer 212 is: A silicon nitride film is formed using plasma CVD. The process gas for depositing the silicon nitride film is SiH4, N2, NH3, and H2 are used. A silicon nitride film is used as one layer of the protective film. Then, mobile ions such as sodium penetrate into the semiconductor region, changing the electrical properties of the TFT. This can suppress the action.

[0161] Furthermore, after forming the protective film, the IGZO semiconductor layer is annealed (300°C to 400°C). That's fine.

[0162] Furthermore, an insulating layer 213 is formed as a planarizing insulating film. The insulating layer 213 is made of polyimide. heat-resistant organic materials such as acrylic, benzocyclobutene, polyamide, and epoxy. In addition to the above organic materials, low dielectric constant materials (low-k materials) can be used. Use roxane-based resins, PSG (phosphorus glass), BPSG (phosphorus boron glass), etc. This is possible. Siloxane resins can have hydrogen, fluorine, alkyl groups, or other substituents. The material may have at least one of the following groups. Furthermore, insulating films formed from these materials may have these groups. Multiple layers may be stacked to form an insulating layer 213.

[0163] Siloxane-based resins are formed using siloxane-based materials as the starting material for Si-OS. This corresponds to a resin containing i-bonds. Siloxane resins have hydrogen as a substituent, as well as fluorine and alkyl It may have at least one of the following: a ru group or an aromatic hydrocarbon.

[0164] Depending on the material, the insulating layer 213 can be formed using CVD, sputtering, SOG, or spin Coating, dipping, spray coating, droplet ejection (inkjet method, screen printing, etc.) (Flush printing, etc.), doctor knife, roll coater, curtain coater, knife coater - and so on can be used. When forming the insulating layer 213 using a material liquid, the baking process At the same time, the IGZO semiconductor layer may be annealed (300°C to 400°C). By combining the firing process of layer 213 and the annealing of the IGZO semiconductor layer, semiconductor devices can be efficiently manufactured. It becomes possible to manufacture it.

[0165] Electrode layers 255 and 265, which function as pixel electrode layers, are indium containing tungsten oxide. Indium zinc oxide containing oxides, tungsten oxide, and indium acid containing titanium oxide Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO) . ) The light transmittance of indium zinc oxide, silicon oxide-added indium tin oxide, etc. A conductive material can be used.

[0166] Furthermore, the electrode layers 255 and 265 include conductive polymers (also called conductive polymers). It can be formed using an electrically conductive composition. Pixel electrodes formed using a conductive composition are The sheet resistance is 10,000 Ω / □ or less, and the light transmittance at a wavelength of 550 nm is 70% or more. Preferably, the resistivity of the conductive polymer contained in the conductive composition is 0.1 Ω·cm. The following is preferable:

[0167] As the conductive polymer, so-called π-electron conjugated conductive polymers can be used. For example For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene Examples include derivatives thereof, or copolymers of two or more of these.

[0168] Through the above process, a highly reliable liquid crystal display device can be manufactured as a semiconductor device. .

[0169] This embodiment can be put into practice by appropriately combining it with the configuration described in any one of Embodiments 1 to 3. It is possible to do so.

[0170] (Embodiment 5) In this embodiment, an example of an electronic paper is shown as a semiconductor device according to one embodiment of the present invention.

[0171] Figure 13 shows an example of a semiconductor device to which the present invention is applied: an active-matrix type electronic paper —This indicates that the thin-film transistor 581 used in the semiconductor device is shown in Embodiment 2. It can be fabricated in the same way as a thin-film transistor, and has an IGZO semiconductor layer and an n-type conductivity IG This is a highly reliable thin-film transistor containing a ZO semiconductor layer. Furthermore, the thin film shown in Embodiment 1... A film transistor can also be used as the thin-film transistor 581 in this implementation.

[0172] The electronic paper in Figure 13 is an example of a display device using a twist ball display method. The Toball display method is an electrode layer that uses spherical particles painted in white and black as display elements. It is placed between the first electrode layer and the second electrode layer, and a potential difference is applied between the first electrode layer and the second electrode layer. This method of display is achieved by controlling the orientation of spherical particles by generating a phenomenon.

[0173] The thin-film transistor 581 is a type of inverse staggered multi-gate transistor (bottom contact type and A thin-film transistor (also called a thin-film transistor) in which the source electrode layer or drain electrode layer provides a first electrical connection. The pole layer 587 and the insulating layer 585 are in contact and electrically connected through an opening formed in the insulating layer 585. Between the electrode layer 587 and the second electrode layer 588, there are black region 590a and white region 590b. A spherical particle 589 is provided, which has a cavity 594 surrounding it that is filled with liquid. Furthermore, the spherical particles 589 are surrounded by a filler material 595 such as resin (see Figure 13). .

[0174] Alternatively, an electrophoretic element can be used instead of a twist ball. (Transparent liquid) And, positively charged white particles and negatively charged black particles are enclosed in a diameter of 10 μm to 20 Microcapsules of approximately 0 μm are used. They are placed between the first electrode layer and the second electrode layer. The microcapsules, when an electric field is applied, are formed by the first electrode layer and the second electrode layer, and white The white and black particles move in opposite directions, allowing for the display of either white or black. An electrophoretic display element, commonly known as electronic paper, is a display element that applies this principle. Electrophoretic display elements have a higher reflectivity than liquid crystal display elements, so auxiliary lights are not required. Furthermore, it consumes little power and the display can be seen even in dimly lit places. Even if power is not supplied to the display unit, it is possible to retain the image that has been displayed. Therefore, a semiconductor device with a display function (simply a display device, or equipped with a display device) is transmitted from a radio wave source. Even when the semiconductor device (also called a semiconductor device) is moved away, the displayed image is saved. This becomes possible.

[0175] Through the above process, highly reliable electronic paper can be manufactured as a semiconductor device. .

[0176] This embodiment can be put into practice by appropriately combining it with the configuration described in any one of Embodiments 1 to 3. It is possible to do so.

[0177] (Embodiment 6) In this embodiment, an example of a light-emitting display device is shown as a semiconductor device according to one embodiment of the present invention. As for the display elements of the device, here we have a light-emitting element that utilizes electroluminescence. This will be demonstrated using the following. A light-emitting device that utilizes electroluminescence uses an organic compound as its light-emitting material. They are distinguished by whether they are organic or inorganic compounds; generally, the former are organic EL elements, and the latter are It is called an inorganic EL element.

[0178] Organic EL elements emit electrons and holes from a pair of electrodes when a voltage is applied to the light-emitting element. Each of these is injected into a layer containing a luminescent organic compound, and an electric current flows through it. Then, these... The recombination of electrons and holes causes the luminescent organic compound to form an excited state. And when that excited state returns to the ground state, it emits light. From this mechanism, Such light-emitting devices are called current-excited light-emitting devices.

[0179] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0180] Figures 14(A) and (B) show an active-matrix semiconductor device as an example to which the present invention is applied. This shows the light-emitting display device. Figure 14(A) is a plan view of the light-emitting display device, and Figure 14(B) is a plan view. This is a cross-sectional view of line YZ at 14(A). Note that Figure 15 shows the illuminated display device shown in Figure 14. The equivalent circuit of the given location is shown.

[0181] Thin-film transistors 301 and 302 used in semiconductor devices are defined in Embodiment 1 and the actual It can be fabricated in the same way as the thin-film transistor shown in Embodiment 2, and the IGZO semiconductor layer and n-type conductive material This is a highly reliable thin-film transistor containing an IGZO semiconductor layer with a specific type.

[0182] The light-emitting display device of this embodiment, shown in Figures 14(A) and 15, is a thin film with a multi-gate structure. Transistor 301, thin-film transistor 302, light-emitting element 303, capacitive element 304, saw Includes a thin-film transistor 301, a gate wiring layer 305, a gate wiring layer 306, and power lines 307. The 302 is an n-channel thin-film transistor.

[0183] Furthermore, in Figure 14(B), the light-emitting display device of this embodiment has a thin-film transistor 302 Used in insulating layer 311, insulating layer 312, insulating layer 313, partition wall 321, and light-emitting element 303. It has a first electrode layer 320, an electroluminescent layer 322, and a second electrode layer 323.

[0184] The insulating layer 313 is made of an organic resin such as acrylic, polyimide, or polyamide, or siloxane. It is preferable to form it using [a specific material / method].

[0185] In this embodiment, since the pixel thin-film transistor 302 is n-type, the pixel electrode layer is It is preferable to use a cathode as electrode layer 320 of 1. Specifically, as the cathode, work Materials with small function, such as Ca, Al, CaF, MgAg, AlLi, etc., can be used. can.

[0186] The partition wall 321 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. A photosensitive material is used, and an opening is formed on the first electrode layer 320, and the side walls of the opening are connected It is preferable to form the inclined surface with a continuous curvature.

[0187] Even if the electroluminescent layer 322 consists of a single layer, it is configured so that multiple layers are stacked. Either way is fine.

[0188] A second electrode layer 323 is formed using an anode so as to cover the electroluminescent layer 322. The polar layer 323 uses a light-transmitting conductive material as listed in Embodiment 4 as a pixel electrode layer. It can be formed with a translucent conductive film. In addition to the above translucent conductive film, a titanium nitride film or A titanium film may be used. The first electrode layer 320, the electroluminescent layer 322, and the second electrode layer 32 The light-emitting element 303 is formed by the overlapping of 3. After this, the light-emitting element 303 To prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering, the second electrode layer 323 and the partition wall 32 A protective film may be formed on 1. Examples of protective films include silicon nitride film, silicon oxide nitride film, and DLC. It can form membranes, etc.

[0189] Furthermore, once the process up to Figure 14(B) is complete, airtightness is further enhanced to prevent exposure to the outside air. Protective films with high performance and low degassing (laminated films, UV-curing resin films, etc.) It is preferable to package (seal) the contents with a cover material.

[0190] Next, the configuration of the light-emitting element will be explained using Figure 16. Here, the driving TFT is n Let's take the case of a type as an example to explain the cross-sectional structure of a pixel. Figure 16(A)(B)(C) The TFT7001, 7011, and 7021, which are driver TFTs used in semiconductor devices, are actually It can be fabricated in the same way as the thin-film transistor shown in Embodiment 1, and the IGZO semiconductor layer and n-type conductive material This is a highly reliable thin-film transistor containing an IGZO semiconductor layer having a specific type. The thin-film transistors shown in Form 2 are applied as TFT7001, 7011, and 7021. It can also be done this way.

[0191] A light-emitting element only needs to have at least one of its electrodes, either the anode or the cathode, transparent in order to extract light. Then, a thin-film transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. This includes top-side emission, bottom-side emission which extracts light from the substrate side, and on the substrate side and the opposite side of the substrate. There is a light-emitting element with a double-sided emission structure that extracts light from the side surface, and the pixel configuration shown in Figure 16 is It can also be applied to light-emitting elements in injection-molded structures.

[0192] The light-emitting element with an upper surface injection structure will be explained using Figure 16(A).

[0193] Figure 16(A) shows that the driving TFT, TFT7001, is of the n type, and the light-emitting element 7002 emits This shows a cross-sectional view of a pixel when the light being emitted passes through to the anode 7005 side. In Figure 16(A), The cathode 7003 of the light-emitting element 7002 and the driving TFT, TFT7001, are electrically connected. The cathode 7003 has a light-emitting layer 7004 and an anode 7005 stacked on top of it in that order. 7003 uses a variety of materials as long as the work function is small and the conductive film reflects light. This is possible. For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable. Even if the light-emitting layer 7004 consists of a single layer, it is configured so that multiple layers are stacked. Either way is fine. If it consists of multiple layers, the electron injection layer is on the cathode 7003. The electron transport layer, light-emitting layer, hole transport layer, and hole injection layer are stacked in that order. It is not necessary to provide all of them. The anode 7005 uses a conductive material that is translucent and transmits light. Forms, for example, indium oxide containing tungsten oxide, indium oxide containing tungsten oxide Indium oxide containing zinc oxide, titanium oxide containing indium tin oxide, and titanium oxide containing indium tin oxide. Oxides, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, oxide A transparent conductive film, such as indium tin oxide with added ilium, may also be used.

[0194] The region between the cathode 7003 and the anode 7005, which sandwiches the light-emitting layer 7004, is the light-emitting element 7002. It corresponds to the pixel shown in Figure 16(A), where the light emitted from the light-emitting element 7002 is the arrow. As indicated by the mark, inject towards the anode 7005 side.

[0195] Next, the light-emitting element with a bottom-extrusion structure will be explained using Figure 16(B). Driving TFT7 When 011 is n-type and the light emitted from the light-emitting element 7012 is directed toward the cathode 7013 side, Figure 16(B) shows a cross-sectional view of a pixel. In Figure 16(B), the driving TFT7011 is electrically connected to the pixel. The cathode 7013 of the light-emitting element 7012 is deposited on a light-transmitting conductive film 7017. The light-emitting layer 7014 and the anode 7015 are stacked in order on the cathode 7013. If 015 is translucent, a shielding material to reflect or block light should be used to cover the anode. A film 7016 may be formed. The cathode 7013 is as in the case of Figure 16(A). Various materials can be used if the conductivity function is small. However, the film thickness is The film should be transparent enough to transmit light (preferably around 5 nm to 30 nm). For example, a 20 nm film. A thick aluminum film can be used as the cathode 7013. And the light-emitting layer 7 014, as in Figure 16(A), consists of a single layer, but multiple layers are stacked on top of each other. Either configuration is acceptable. The anode 7015 does not need to transmit light, but as shown in the diagram... Similar to 16(A), it can be formed using a light-transmitting conductive material. The shielding film 7016 can be made of, for example, a light-reflecting metal, but is not limited to a metal film. It's not possible. For example, a resin with black pigment added can be used.

[0196] The region between the cathode 7013 and anode 7015, sandwiching the light-emitting layer 7014, is the light-emitting element 7012. This corresponds to the pixel shown in Figure 16(B), where the light emitted from the light-emitting element 7012 is As indicated by the arrow, the material is injected towards the cathode 7013.

[0197] Next, a light-emitting element with a double-sided injection structure will be explained using Figure 16(C). Figure 16(C) Then, on the light-transmitting conductive film 7027 electrically connected to the driving TFT 7021, The cathode 7023 of the light-emitting element 7022 is formed by depositing a film, and the light-emitting layer 7024 is on the cathode 7023. The anodes 7025 are stacked in order. The cathode 7023 is the same as in Figure 16(A). Various materials can be used if the conductivity function is small. However, the film thickness is ...to the extent that it transmits light. For example, Al with a film thickness of 20 nm is used as cathode 7023. It can be used. The light-emitting layer 7024 is composed of a single layer, as in Figure 16(A). It is acceptable whether it is configured as a single layer or as multiple layers stacked on top of each other. Anode 70 25 is formed using a light-transmitting conductive material, similar to Figure 16(A). It is possible.

[0198] The portion where the cathode 7023, the light-emitting layer 7024, and the anode 7025 overlap is the light-emitting element 70 This corresponds to 22. In the case of the pixel shown in Figure 16(C), the light emitted from the light-emitting element 7022 As indicated by the arrows, the material is injected into both the anode 7025 side and the cathode 7023 side.

[0199] Here, we have discussed organic EL elements as light-emitting elements, but inorganic EL elements can also be used as light-emitting elements. It is also possible to incorporate an L element.

[0200] In this embodiment, a thin-film transistor (driving TFT) controls the driving of the light-emitting element, An example of electrically connected light-emitting elements was shown, but current is currently flowing between the driving TFT and the light-emitting element. A configuration in which a control TFT is connected is also acceptable.

[0201] The semiconductor device shown in this embodiment is not limited to the configuration shown in Figure 16. Various modifications are possible based on the technical concept of this invention.

[0202] Through the above process, a highly reliable light-emitting display device can be manufactured as a semiconductor device. .

[0203] This embodiment can be put into practice by appropriately combining it with the configuration described in any one of Embodiments 1 to 3. It is possible to do so.

[0204] (Embodiment 7) The configuration of a display panel, which is one embodiment of the semiconductor device of the present invention, is shown below. In this state, a liquid crystal display panel is a form of liquid crystal display device having liquid crystal elements as display elements. A liquid crystal panel (also known as a liquid crystal panel) is a type of semiconductor device that has light-emitting elements as display elements. This section explains display panels (also known as light-emitting panels).

[0205] Next, regarding the appearance and cross-section of a light-emitting display panel corresponding to one embodiment of the semiconductor device of the present invention, This will be explained using Figure 17. Figure 17A shows the IGZO semiconductor layer formed on the first substrate and A highly reliable thin-film transistor and light-emitting element containing an IGZO semiconductor layer having n-type conductivity. Figure 17 shows a top view of the panel, where the child is sealed between the second substrate and the second substrate with a sealing material. B) corresponds to the cross-sectional view of HI in Figure 17(A).

[0206] Pixel section 4502, signal line driving circuit 4503a, 450 provided on the first substrate 4501 3b, and the scan line drive circuits 4504a and 4504b are surrounded by a sealing material 4505 A pixel unit 4502, signal line driving circuits 4503a, 4503b, and A second substrate 4506 is provided on the scanning line driving circuits 4504a and 4504b. Thus the pixel portion 4502, the signal line driving circuits 4503a and 4503b, and the scanning line driving circuits 45 04a and 4504b are sealed together with the filling material 4507 by the first substrate 4501, the sealing material 4505, and the second substrate 4506.

[0207] Also, the pixel portion 4502, the signal line driving circuits 4503a and 4 503b, and the scanning line driving circuits 4504a and 4504b provided on the first substrate 4501 have a plurality of thin film transistors. In FIG. 17(B), the thin film transistor 4510 included in the pixel portion 4502 and the thin film transistor 4509 included in the signal line driving circuit 4503a are illustrated.

[0208] The thin film transistors 4509 and 4510 correspond to thin film transistors including an IGZO semiconductor layer and an IGZO semiconductor layer having an n-type conductivity type, and the thin film transistors shown in Embodiment 1 or Embodiment 2 can be applied. In the present embodiment, the thin film transistors 4509 and 4510 are n-channel type thin film transistors.

[0209] Also, 4511 corresponds to a light emitting element, and the first electrode layer 4517, which is a pixel electrode of the light emitting element 4511, is electrically connected to the source electrode layer or the drain electrode layer of the thin film transistor 4510. Note that the configuration of the light emitting element 4511 is not limited to the configuration shown in the present embodiment. The configuration of the light emitting element 4511 can be appropriately changed according to the direction of light extracted from the light emitting element 4511 and the like.

[0210] Also, the signal line driving circuits 4503a and 4503b, and the scanning line driving circuits 4504a and 4504b The various signals and potentials applied to the pixel section 4502 are FPC4518a, 4518 It is supplied by b.

[0211] In this embodiment, the connection terminal 4515 is formed from the same conductive film as the second electrode layer 4512. The wiring 4516 is made from the same conductive film as the first electrode layer 4517 of the light-emitting element 4511. It is formed.

[0212] The connection terminal 4515 is connected to the terminals of the FPC 4518a via the anisotropic conductive film 4519. They are electrically connected.

[0213] The substrate located in the direction of light extraction from the light-emitting element 4511 is a second substrate that is not light-transmitting. It must be. In that case, glass plate, plastic plate, polyester film or This uses a light-transmitting material such as acrylic film.

[0214] Furthermore, in addition to inert gases such as nitrogen and argon, UV-curable resin can also be used as the filler 4507. Oils or thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV A (ethylene vinyl acetate) can be used. In this embodiment, nitrogen is used as a filler. I used a prime element.

[0215] Furthermore, if necessary, a polarizing plate or circular polarizing plate (including elliptical polarizing plate) may be placed on the emission surface of the light-emitting element. You may also appropriately incorporate optical films such as phase difference plates (λ / 4 plate, λ / 2 plate) and color filters. Furthermore, an anti-reflective coating may be provided on the polarizing plate or circular polarizing plate. For example, by the surface irregularities An anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0216] The signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b are Drive turns formed by a single-crystal semiconductor film or polycrystalline semiconductor film on a separately prepared substrate It may be implemented in the circuit. Also, only the signal line drive circuit, or part of it, or the scan line drive circuit The road may be formed separately or partially, and this embodiment is configured as shown in Figure 17. Not limited.

[0217] Next, regarding the appearance and cross-section of a liquid crystal display panel corresponding to one embodiment of the semiconductor device of the present invention, This will be explained using Figure 18. Figure 18(A1)(A2) shows the first substrate 4001 formed on the substrate 4001. A highly reliable thin film comprising an IGZO semiconductor layer and an IGZO semiconductor layer having an n-type conductivity. Transistors 4010, 4011, and liquid crystal element 4013 are placed between the second substrate 4006. Figure 18(B) is a top view of the panel sealed with sealant 4005. This corresponds to the cross-sectional view of MN in (A1)(A2).

[0218] The pixel section 4002 and the scanning line driving circuit 4004 are surrounded on the first substrate 4001. A sealing material 4005 is provided in this manner. Also, the pixel section 4002 and the scan line drive rotation A second substrate 4006 is provided on the path 4004. Therefore, the pixel section 4002 and the scanning The line drive circuit 4004 consists of the first substrate 4001, the sealing material 4005, and the second substrate 4006. It is sealed together with the liquid crystal layer 4008. Also, the seal on the first substrate 4001 A single crystal is placed on a separately prepared substrate in a region different from the area enclosed by material 4005. A signal line driving circuit 4003, formed from a semiconductor film or a polycrystalline semiconductor film, is mounted.

[0219] Furthermore, the method of connecting the separately formed drive circuit is not particularly limited, and COG method, Wire bonding methods or TAB methods can be used. Figure 18(A1) This is an example of implementing the signal line drive circuit 4003 using the COG method, and Figure 18(A2) shows that This is an example of implementing the signal line drive circuit 4003 using the TAB method.

[0220] Furthermore, the pixel section 4002 and the scanning line driving circuit 4004 provided on the first substrate 4001 are, It has multiple thin-film transistors, and in Figure 18(B), the thin film included in the pixel section 4002 Transistor 4010 and thin-film transistor 4011 included in scan line drive circuit 4004 This illustrates the following.

[0221] Thin-film transistors 4010 and 4011 have an IGZO semiconductor layer and n-type conductivity I This corresponds to a thin-film transistor containing a GZO semiconductor layer, and is described in Embodiment 1 or Embodiment 2. The thin-film transistor shown can be applied. In this embodiment, the thin-film transistor The TA4010 and TA4011 are n-channel thin-film transistors.

[0222] Furthermore, the pixel electrode layer 4030 of the liquid crystal element 4013 is connected to the thin-film transistor 4010. They are electrically connected. And the counter electrode layer 4031 of the liquid crystal element 4013 is on the second substrate 40 Formed on 06. Pixel electrode layer 4030, counter electrode layer 4031, and liquid crystal layer 4008 The overlapping portion corresponds to the liquid crystal element 4013. Note that the pixel electrode layer 4030 and the opposite The electrode layer 4031 is provided with insulating layers 4032 and 4033, which function as alignment films. The liquid crystal layer 4008 is sandwiched between insulating layers 4032 and 4033.

[0223] The first substrate 4001 and the second substrate 4006 are made of glass, metal (typically, glass). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, or acrylic resin film Film can be used. Also, aluminum foil can be used with PVF film or polyester. It is also possible to use a sheet with a structure sandwiched between layers of film.

[0224] Furthermore, 4035 is a columnar spacer obtained by selectively etching an insulating film. To control the distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031 It is provided in [location]. A spherical spacer may also be used.

[0225] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 The various signals and potentials supplied to 002 are provided by the FPC4018.

[0226] In this embodiment, the connection terminal 4015 is connected to the pixel electrode layer 4030 of the liquid crystal element 4013. Formed from the same conductive film, wiring 4016 is connected to thin-film transistors 4010 and 4011. It is formed from the same conductive film as the electrode layer.

[0227] The connection terminal 4015 connects to the terminals of the FPC 4018 via the anisotropic conductive film 4019. They are connected by energy.

[0228] Furthermore, in Figure 18, a signal line drive circuit 4003 is formed separately and implemented on the first substrate 4001. Although an example of the configuration is shown, this embodiment is not limited to this configuration. Scan line drive circuit Alternatively, it may be formed and implemented separately, or as part of the signal line drive circuit or part of the scan line drive circuit. It is also acceptable to form and implement the component separately.

[0229] Figure 19 shows a liquid crystal semiconductor device using a TFT substrate 2600 manufactured by applying the present invention. This shows an example of what constitutes a crystal display module.

[0230] Figure 19 shows an example of a liquid crystal display module, in which the TFT substrate 2600 and the opposing substrate 2601 are The pixel portion 2603, which includes a TFT and the like, is fixed in place by a material 2602, and the liquid crystal layer is also included between them. A display element 2604 and a colored layer 2605 are provided to form a display area. Colored layer 2605 This is necessary for color display, and in the case of the RGB method, it corresponds to red, green, and blue. A colored layer is provided corresponding to each pixel. The TFT substrate 2600 and the opposing substrate 2601 Polarizing plates 2606, 2607, and 2613 are arranged on the outside. The light source is cold It consists of a cathode tube 2610 and a reflector 2611, and the circuit board 2612 is flexible The wiring circuit section 2608 of the TFT board 2600 is connected by the wire board 2609, and the control External circuits such as polarizing circuits and power supply circuits are incorporated. Also, between the polarizing plate and the liquid crystal layer The layers may be stacked with a phase difference plate in place.

[0231] The LCD display module has TN (Twisted Nematic) mode and IPS (I n-Plane-Switching) mode, FFS (Fringe Field Switching) (witching) mode, MVA (Multi-domain Vertical A) alignment) mode, PVA(Patterned Vertical Alignment) mode nment) mode, ASM(Axially Symmetric aligned Micro-cell mode, OCB (Optical Compensated B) irefringence) mode, FLC (Ferroelectric Liqui d Crystal) mode, AFLC (AntiFerroelectric Liq. You can use modes such as UID Crystal.

[0232] Through the above process, a display panel with high reliability as a semiconductor device can be manufactured.

[0233] This embodiment can be put into practice by appropriately combining it with the configuration described in any one of Embodiments 1 to 6. It is possible to do so.

[0234] (Embodiment 8) One embodiment of the semiconductor device of the present invention can be applied as electronic paper. —It can be used in electronic devices in any field that display information. For example, e-paper can be used for e-books, posters, and transportation such as trains. This can be applied to in-vehicle advertisements, displays on various cards such as credit cards, etc. Examples of electronic devices are shown in Figures 20 and 21.

[0235] Figure 20(A) shows poster 2631 made with electronic paper. In the case of printed materials, advertisements are changed manually, but with the application of the present invention, electronic Using paper allows you to change the display of advertisements in a short amount of time. Also, the display will not break down. A stable image can be obtained without any problems. Furthermore, the poster can be configured to transmit and receive information wirelessly. good.

[0236] Figure 20(B) also shows in-vehicle advertisements 2632 on trains and other vehicles. In the case of printed paper materials, advertisements are changed manually, but with the application of the present invention, Using sub-papers allows you to change the advertisement display quickly without requiring a lot of manpower. Furthermore, a stable image can be obtained without any display distortion. In addition, information about in-car advertisements is transmitted wirelessly. A configuration that allows for both sending and receiving data is also acceptable.

[0237] Figure 21 also shows an example of eBook 2700. For example, eBook 2700 is, It consists of two enclosures, enclosure 2701 and enclosure 2703. Enclosure 2701 and enclosure The body 2703 is integrated with the shaft portion 2711, and opens and closes around the shaft portion 2711 as an axis. It is possible to perform operations. This configuration makes it possible to operate like a paper book. This is the result.

[0238] The display unit 2705 is incorporated into the housing 2701, and the display unit 2707 is incorporated into the housing 2703. It is included. Display units 2705 and 2707 are configured to display a continuation screen. Alternatively, a configuration that displays different screens is also acceptable. For example, text is displayed on the right-hand display unit (display unit 2705 in Figure 21), and the left-hand display unit An image can be displayed on the display unit 2707 in Figure 21.

[0239] Furthermore, Figure 21 shows an example in which the housing 2701 is equipped with an operating section, etc. For example, housing 2 Unit 701 is equipped with a power supply 2721, operation keys 2723, speaker 2725, and the like. The page can be turned using operation key 2723. Note that the key is located on the same side as the display unit of the casing. It may also be configured to include a board or pointing device. Furthermore, the back of the enclosure or On the side, there are external connection terminals (earphone jack, USB terminal, or AC adapter and USB A configuration that includes terminals that can connect to various cables such as cables, a recording medium insertion section, and so on. It may also be done this way. Furthermore, the eBook 2700 is configured to have the functionality of an electronic dictionary. That's fine.

[0240] Furthermore, the e-book 2700 may be configured to transmit and receive information wirelessly. By wireless means, The system will be configured to allow users to purchase and download desired book data from an e-book server. It is also possible.

[0241] This embodiment is a configuration of any one of Embodiments 1 to 3, or the configuration described in Embodiment 5. It is possible to implement this in appropriate combinations.

[0242] (Embodiment 9) The semiconductor device according to the present invention can be applied to various electronic devices (including amusement machines). Examples of electronic devices include television equipment (televisions or television receivers). (Also known as) Monitors for computers, digital cameras, digital video cameras, etc. Digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples include machines, mobile information terminals, sound playback devices, and large game machines such as pachinko machines.

[0243] Figure 22(A) shows an example of the television equipment 9600. In the case of 00, the display unit 9603 is incorporated into the housing 9601. The display unit 9603 displays It is possible to display an image. Also, here, the stand 9605 is used to display the housing 9601 This shows a configuration that supports this.

[0244] The television unit 9600 is operated using the control switches on the housing 9601 and a separate remote control. This can be done using the control unit 9610. The remote control unit 9610 has control keys 9609 allows you to control the channel and volume, and the information is displayed on the display unit 9603. The video can be controlled. Furthermore, the remote control unit 9610 can be controlled by the remote control unit. A display unit 9607 may be provided to display the information output from 9610.

[0245] The television system 9600 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and can also connect via a modem via wired or wireless connection. By connecting to the communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0246] Figure 22(B) shows an example of the digital photo frame 9700. For example, The photo frame 9700 has a display unit 9703 integrated into the housing 9701. Section 9703 is capable of displaying various images, such as those captured by a digital camera. By displaying the image data, it can function just like a regular photo frame.

[0247] The Digital Photo Frame 9700 includes an operating unit and external connection terminals (USB terminal, USB port). A structure that includes terminals that can connect to various cables such as B cables, a recording medium insertion section, etc. These components may be incorporated on the same surface as the display unit, but may also be on the sides or back. It is desirable to include it as it improves the design. For example, the recording medium of a digital photo frame. A memory device containing image data captured by a digital camera is inserted into the body insertion site. The system can capture data and display the captured image data on the display unit 9703.

[0248] Furthermore, the 9700 digital photo frame may be configured to transmit and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly.

[0249] Figure 23(A) shows a portable gaming machine, which consists of two cabinets, cabinet 9881 and cabinet 9891. It is connected by a connecting part 9893 so that it can be opened and closed. The housing 9881 has a display unit The 9882 is incorporated, and the display unit 9883 is incorporated into the housing 9891. The portable gaming machine shown in 23(A) also includes a speaker section 9884 and a recording medium insertion section 988 6. LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration Equipped with a function to measure motion, odor, or infrared radiation, a microphone (9889), etc. Of course, the configuration of portable gaming machines is not limited to those described above, and at least the present invention includes Any configuration that includes such semiconductor equipment is acceptable, and other auxiliary equipment may be provided as appropriate. This is possible. The portable gaming machine shown in Figure 23(A) has a program recorded on the recording medium. It has functions to read data and display it on the display unit, and to communicate wirelessly with other portable gaming machines. It has the function of sharing information. The functions of the portable gaming machine shown in Figure 23(A) are It is not limited to this and can have a variety of functions.

[0250] Figure 23(B) shows an example of a large-scale gaming machine, the 9900 slot machine. The machine 9900 has a display unit 9903 integrated into the casing 9901. The Machine 9900 also features other operating mechanisms such as a start lever and stop switch, and coins. It is equipped with an input slot, speaker, etc. Of course, the configuration of the slot machine 9900 is as described above. It is not limited to the present invention, and any configuration that includes at least the semiconductor device according to the present invention is sufficient. The configuration may include other auxiliary equipment as appropriate.

[0251] Figure 24 shows an example of a mobile phone 1000. The mobile phone 1000 has a housing 100 In addition to the display unit 1002 incorporated into 1, there are also operation buttons 1003, an external connection port 1004, It is equipped with speaker 1005, microphone 1006, etc.

[0252] The mobile phone 1000 shown in Figure 24 allows information to be entered by touching the display unit 1002 with a finger or the like. It can be powered. Also, operations such as making a phone call or sending an email are performed on the display unit 100. This can be done by touching step 2 with your finger or other object.

[0253] The display unit 1002 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0254] For example, when making a phone call or composing an email, the display unit 1002 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. It seems so.

[0255] Furthermore, the mobile phone 1000 contains sensors that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation (vertical or horizontal) of the mobile phone 1000 can be determined, and the display The display on the display unit 1002 can be automatically switched.

[0256] Furthermore, the screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. This is done by operating button 1003. Also, the type of image displayed on display unit 1002 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0257] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1002 is detected and displayed If there is no input via touch operation on unit 1002 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0258] The display unit 1002 can also function as an image sensor. For example, the display unit 10 By touching the palm or fingers to device 02, the device can capture palm prints, fingerprints, etc., to perform identity verification. It can also be used. In addition, the display unit has a backlight that emits near-infrared light or a sensor that emits near-infrared light. Using a light source designed for imaging, it is also possible to image finger veins, palmar veins, and other veins. [Explanation of symbols]

[0259] 100: Circuit board 101: Grid gate layer 102: Gate Insulation Layer 103: Semiconductor layer 104a, 104b: Buffer layer having n-type conductivity 105a, 105b: Source electrode layer or drain electrode layer 111: Semiconductor film 113, 116, 118: Masks 115a, 115b: n-type semiconductor layer 117: Conductive film 171a, 171b: Thin-film transistors

Claims

[Claim 1] A first conductive layer having a region that functions as a gate electrode, A first insulating layer having a region that functions as a gate insulating film, A second conductive layer having a region that functions as either a source electrode or a drain electrode, A third conductive layer having a region that functions as the other of the source electrode and the drain electrode, It has a first layer containing In, Ga, and Zn, The first layer covers the first side of the second conductive layer that is closer to the gate electrode and the second side that is further away from the gate electrode. Semiconductor equipment.

Images