Asymmetrical side-gap writer fabricated by ion beam etching (IBE) / ion beam deposition (IBD) process for improved spatial density capability (ADC).

Abstract

The present invention provides a write head having an asymmetrical side gap (SG) that offers a narrower side gap (SG) width while mitigating any limitations or constraints on write capability that may arise from reducing the side gap SG. [Solution] In the asymmetrical writing head 600, the main pole 602 is positioned offset with respect to the central axis A1 of the writing head such that it is closer to the first SS 606A portion than to the second side shield (SS) 606B portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to the field of electromechanical data storage devices. More specifically, embodiments of the present invention relate to a write head having an asymmetric side gap design. [Background technology]

[0002] Magnetic recording media (e.g., magnetic disks) can store magnetic bits that represent digital data. A magnetoresistive writer may be part of a hard disk drive (HDD) for writing digital data to a magnetic recording medium.

[0003] As the total amount of digital data stored on HDD devices increases, the demand for increased data capacity in HDD devices is growing. One technology for increasing HDD data capacity may include heat-assisted magnetic recording (HAMR) or microwave-assisted magnetic recording (MAMR). HAMR and MAMR technologies increase the density of the HDD by manipulating a portion of the magnetic recording medium, thereby improving the write performance of the write head to the magnetic recording medium. [Overview of the Initiative]

[0004] This embodiment relates to a write head having an asymmetric side gap (SG) design. In an asymmetric design, the main electrode may be positioned offset with respect to the central axis of the write head such that the main electrode is closer to the first side shield (SS) portion than to the second side shield (SS) portion. The asymmetric design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process. The asymmetric design can provide a narrower side gap width while mitigating any limitations or constraints on write capability that may arise from reducing the SG.

[0005] In a first exemplary embodiment, a write head is provided. The write head may include a magnetic main pole (MP) and a magnetic trailing shield adjacent to the MP, including at least a hot seed (HS) layer. The write head may also include a first side shield (SS) portion located on a first side of the central axis and a second SS portion located on a second side of the central axis. The center of the MP may be offset from the central axis such that the distance between the center of the MP and the first SS portion is less than the distance between the center of the MP and the second SS portion.

[0006] In some examples, the HS layer is configured to collect magnetic flux from the MP and increase the downtrack gradient, while the first SS portion and the second SS portion are configured to confine magnetic flux in the crosstrack direction to increase the crosstrack gradient.

[0007] In some examples, the write head may also include a first dielectric layer positioned adjacent to a first SS portion, a second dielectric layer positioned adjacent to a second SS portion, a first metal layer positioned between the MP and the first dielectric layer, and a second metal layer positioned between the MP and the second dielectric layer.

[0008] In some examples, the second dielectric layer is milled to a thickness less than that of the first dielectric layer by applying directional etching to the first and / or second dielectric layer using an ion beam etching (IBE) process.

[0009] In some examples, directional etching is performed at an angle ranging from 0 to 20 degrees parallel to the air-bearing surface (ABS) and at an inclination angle ranging from 45 to 75 degrees perpendicular to the write head.

[0010] In some examples, the thickness of the first metal layer is greater than the thickness of the second metal layer, based on an ion beam deposition (IBD) process that provides directional deposition on the first and / or second metal layer.

[0011] In some cases, directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the air bearing surface (ABS) direction and at an inclination angle in the range of 10 to 30 degrees perpendicular to the write head. In some examples, the first dielectric layer and / or the second dielectric layer are made of aluminum oxide (AlO x ), silicon oxide (SiO x ), aluminum nitride (AlN x Includes insulating material containing ).

[0012] In some examples, the first metal layer and / or the second metal layer include a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer. In some examples, the width of the side gap (SG) between the first SS portion and the second SS portion is in the range of 5 to 100 nanometers (nm) on each side of the central axis.

[0013] In some examples, the difference between the distance between the center of the MP and the first SS portion and the distance between the center of the MP and the second SS portion is in the range of 1 to 50 nm. In another exemplary embodiment, a method is provided. This method may include the step of providing a write head structure having at least a first side shield (SS) portion located on a first side of the central axis and a second SS portion located on a second side of the central axis. The method may also include the step of arranging a first dielectric layer adjacent to the first SS portion. The method may also include the step of arranging a second dielectric layer adjacent to a second SS portion. The method may also include the step of arranging a first metal layer adjacent to the first dielectric layer. The method may also include the step of arranging a second metal layer adjacent to the second dielectric layer.

[0014] The method may also include the step of performing an ion beam etching (IBE) process by applying directional etching to the first dielectric layer and / or the second dielectric layer to create different thicknesses between the first dielectric layer and the second dielectric layer, or the step of performing an ion beam deposition (IBD) process that provides directional deposition on the first metal layer and / or the second metal layer to create different thicknesses between the first metal layer and the second metal layer. The method may also include the step of positioning a principal electrode (MP) between the first SS portion and the second SS portion. The center of the MP may be positioned offset from the central axis such that the distance between the center of the MP and the first SS portion is less than the distance between the center of the MP and the second SS portion.

[0015] In some examples, directional etching is performed at an angle in the range of 0 to 20 degrees parallel to the air bearing surface (ABS) direction and at an inclination angle in the range of 45 to 75 degrees perpendicular to the write head. In some cases, directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the air bearing surface (ABS) direction and at an inclination angle in the range of 10 to 30 degrees perpendicular to the write head.

[0016] In some examples, the first dielectric layer and / or the second dielectric layer are made of aluminum oxide (AlO x ), silicon oxide (SiOx ), aluminum nitride (AlN x Includes insulating material containing ).

[0017] In some examples, the first metal layer and / or the second metal layer include a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer. In another exemplary embodiment, a device is provided. The device may include a magnetic principal pole (MP), a first metal layer disposed adjacent to a first side of the MP, and a second metal layer disposed adjacent to a second side of the MP. The device may also include a first dielectric layer disposed adjacent to the first metal layer and a second dielectric layer disposed adjacent to the second metal layer.

[0018] The device may also include a first side shield (SS) portion located on a first side of the central axis and adjacent to the first dielectric layer. The device may also include a second SS portion located on a second side of the central axis. The center of the MP may be offset from the central axis such that the distance between the center of the MP and the first SS portion is less than the distance between the center of the MP and the second SS portion.

[0019] In some examples, the second dielectric layer is milled to a thickness less than that of the first dielectric layer by applying directional etching to the first and / or second dielectric layer using an ion beam etching (IBE) process, where the directional etching is performed at an angle in the range of 0 to 20 degrees parallel to the air bearing surface (ABS) direction and at an inclination angle in the range of 45 to 75 degrees perpendicular to the device.

[0020] In some examples, the thickness of the first metal layer is greater than that of the second metal layer, based on an ion beam deposition (IBD) process that provides directional deposition on the first and / or second metal layers, and the directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the air bearing surface (ABS) direction and at an inclination angle in the range of 10 to 30 degrees perpendicular to the device.

[0021] In some examples, the first dielectric layer and / or the second dielectric layer includes an insulating material including aluminum oxide (AlO x ), silicon oxide (SiO x ), aluminum nitride (AlN x ), and the first metal layer and / or the second metal layer includes a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer.

[0022] Other features and advantages of embodiments of the present invention will become apparent from the accompanying drawings and the following detailed description. Embodiments of the present invention are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals indicate like elements.

Brief Description of the Drawings

[0023] [Figure 1] 0]A perspective view of a head arm assembly according to an embodiment of the prior art. [Figure 2] A side view of a head stack assembly according to an embodiment of the prior art. [Figure 3] A plan view of a magnetic recording device according to an embodiment of the prior art. [Figure 4] An exemplary symmetric write head according to one embodiment is shown. [Figure 5] An exemplary graphical representation of magnetic field (Hc) lines of a symmetric write head according to one embodiment is shown. [[ID=!34]] [Figure 6] An exemplary asymmetric write head according to one embodiment is shown. [Figure 7] An exemplary graphical representation of magnetic field (Hc) lines of an asymmetric write head according to one embodiment is shown. )]] [Figure 8A] An exemplary top view for generating an asymmetric MP write head according to one embodiment is shown. [Figure 8B] An exemplary air bearing surface (ABS) view of an asymmetric write head formed by an IBE approach according to one embodiment is shown. <( [Figure 8C]This is an exemplary air bearing surface (ABS) diagram of an asymmetrical writing head formed by an IBD approach according to one embodiment. [Figure 9] This shows a graph of the magnetic field (Hy) as a function of Ew according to one embodiment. [Figure 10] A graph of the DT gradient / CT gradient nSG / CT gradient wSG as a function of EW according to one embodiment is shown. [Figure 11] This is an exemplary graph display showing exemplary EBi and Ebo for each of several exemplary write head models according to one embodiment. [Figure 12] This is an exemplary graph of the maximum TAA SMR for each of several regions according to one embodiment. [Figure 13] This shows an exemplary graph of the maximum TAA average relative to EW for a write head design according to one embodiment. [Modes for carrying out the invention]

[0024] A disk drive may include a write head that interacts with a magnetic recording medium to read and write digital data to the magnetic recording medium. As the amount of digital data that needs to be stored increases and the data space density of a hard disk drive (HDD) increases, both the write head and the digital data written to the magnetic recording medium can generally be made smaller.

[0025] Figure 1 is a perspective view of a prior art head arm assembly 100 according to several embodiments of the present disclosure. Referring to Figure 1, the head arm assembly (or head gimbal assembly, HGA) 100 includes a magnetic recording head 101 consisting of a slider and a PMR writer structure formed thereon, and a suspension that elastically supports the magnetic recording head. The suspension has a leaf spring-shaped load beam 222 made of stainless steel, a flexure 104 provided at one end of the load beam, and a base plate 224 provided at the other end of the load beam. The slider portion of the magnetic recording head is joined to the flexure, thereby giving the magnetic recording head a suitable degree of freedom. A gimbal portion (not shown) is provided at the portion of the flexure to which the slider is attached for maintaining the attitude of the magnetic recording head at a steady level.

[0026] The HGA100 is mounted on an arm 230 formed on a head arm assembly 103. The arm moves the magnetic recording head 101 in the cross-track direction y of the magnetic recording medium 140. One end of the arm is attached to a base plate 224. A coil 231, which is part of a voice coil motor, is attached to the other end of the arm. A bearing section 233 is provided in the middle of the arm 230. The arm is rotatably supported using a shaft 234 attached to the bearing section 233. The arm 230 and the voice coil motor that drives the arm constitute an actuator.

[0027] Next, a side view 200 of the head stack assembly (Figure 2) and a top view 300 of the magnetic recording device incorporating the magnetic recording head 101 (Figure 3) are shown. The head stack assembly 250 is a component in which multiple HGAs (HGA 100-1 and the second HGA 100-2 are located on the outside, and HGA 100-3 and HGA 100-4 are located on the inside) are attached to arms 230-1 and 230-2 on the carriage 251, respectively. The HGAs are mounted on each arm at intervals so that they are aligned vertically (in a direction perpendicular to the magnetic medium 140). The coil portion of the voice coil motor (231 in Figure 1) is mounted on the opposite side of each arm of the carriage 251. The voice coil motor has permanent magnets 263 positioned opposite the coil 231.

[0028] Referring to Figure 3, the head stack assembly 250 is incorporated into the magnetic recording device 260. The magnetic recording device has a plurality of magnetic media 140 attached to a spindle motor 261. Each magnetic recording medium is provided with two magnetic recording heads positioned opposite each other across the magnetic recording medium. The head stack assembly and actuators, excluding the magnetic recording head 101, constitute a positioning device that supports the magnetic recording head and positions it relative to the magnetic recording medium. The magnetic recording head moves in the cross-track direction of the magnetic recording medium by the actuator. The magnetic recording head records information on the magnetic recording medium using a PMR writer element (not shown) and reproduces the information recorded on the magnetic recording medium using a magnetoresistive (MR) sensor element (not shown).

[0029] To achieve higher area density capability (ADC), many write heads were designed to record longitudinal magnetic recording (LMR), and then transitioned to perpendicular magnetic recording (PMR) writers. Furthermore, the introduction of trailing shields (TS), leading shields (LS), and side shields (SS) provides improved down-track and cross-track gradients, which can be used to achieve higher track-per-inch (TPI) and bit-per-inch (BPI) values.

[0030] As TPI increases, not only the media granularity but also the MP size may need to be further reduced. However, reducing the MP size, along with smaller writer gaps (WG) and side gaps (SG), weakens the write head's writing capability to such an extent that the writer can no longer write to the media with constant thermal stability without losing signal-to-noise ratio (SNR). This is the so-called trilemma in recording physics, which limits further improvements to PMR writer heads.

[0031] One potential path to further improve aerial data capability (ADC) is to reduce the size of the writer structure. Due to the limitations of the preamplifier, the data rate may be close to its limit, which further limits BPI improvement. Rather, efforts can be concentrated on improving TPI. The side shield (SS) can be one of the more important components that affect the final TPI performance of the write head, as it can significantly affect how much magnetic flux enters the side track and the confinement of the side track flux.

[0032] Reducing the side gap (SG) may be the primary factor in improving SS confinement and obtaining a better cross-track gradient. However, due to a trilemma in recording physics, further reducing the SG can lead to problems with the write head's write capability due to increased flux leakage in the SS. Furthermore, higher magnetic moments in the SS can further reduce the write head's write capability.

[0033] This embodiment relates to a system and method for manufacturing a write head with an asymmetric side gap (asySG) design that can provide a narrower side gap without the write capability problems that arise from reducing the overall size of the write thread (SG).

[0034] In such a design, two separate approaches (ion beam etching (IBE) or ion beam deposition (IBD)) can achieve an asySG structure without the need for additional masks for IBE or IBD. This design also maintains similar erase width (EW) / full width at half maximum (FWHM) without losing maximum signal track intensity, while also benefiting conventional magnetic recording (CMR) write modes. This design can also provide the advantage of erase bandwidth (EB) on the narrow SG side. Furthermore, by allocating the narrow SG side to the outside diameter (OD) write area, single magnetic recording (SMR) ADC gain can be achieved. Such a design can also be adapted to various write head designs (e.g., conventional tunable pole protrusion (cTPP), tunable pole protrusion (TPP), giant magnetoresistance (GMAC / GMR3B)).

[0035] Figure 4 shows an exemplary symmetrical write head 400. As shown in Figure 4, the symmetrical write head 400 may include an MP 402 positioned adjacent to a hot seed (HS) 404, SS portions (e.g., a first or "left" SS 406A, a second or "right" SS 406B), and a reading shield (LS) 408.

[0036] The central axis A1 can divide the central portion of the write head 400. In the example in Figure 4, the main pole 402 may be positioned directly through axis A1 such that the distance between the center of the main pole 402 and the first SS406A (indicated by D1) is approximately the same as or equal to the distance between the center of the main pole 402 and the second SS406B (indicated by D2).

[0037] Figure 5 shows an exemplary graph representation of the magnetic field (Hc) lines of a symmetric write head 400. The representation in Figure 5 shows an exemplary symmetric magnetic field profile generated from the head cross-track (CT) position and down-track (DT) position of the write head 400 in Figure 4.

[0038] A key feature of asymmetric SG designs, compared to symmetric SG designs, is the inclusion of MP shifts, which can provide different SG distances between the left and right SGs. Figure 6 shows an exemplary asymmetric write head 600. A write head 600 as shown in Figure 6 may include a main pole 602 shifted relative to a first SS606A and a second SS606B, with HS604 and LS608 positioned adjacent to the main pole 602.

[0039] In asymmetric designs such as the one shown in Figure 6, the principal pole (MP) 602 can be shifted so that it is no longer positioned on axis A1 but rather on axis A2 (for example, shifted to the left). This shift can result in a difference in the gap distance between the MP and each SS section. For example, the distance from the center of MP602, defined as D1, to the first (or "left") SS606A can be smaller than the distance D2 from the center of MP602 to the second (or "right") SS606B. The difference between D1 and D2 can represent the difference in the gap distance between the shifted MP602 and each SS section 606A, 606B.

[0040] Figure 7 shows an exemplary graphical representation of the magnetic field (Hc) line of an asymmetric write head 600. The representation in Figure 7 shows an exemplary symmetric magnetic field profile generated from the head crosstrack (CT) position and downtrack (DT) of the asymmetric write head 600 in Figure 6. Figure 7 can show the resulting magnetic field profile of an asymmetric SG, which can be tilted toward the narrower SG side.

[0041] Different manufacturing processes can be employed to produce a write head with an asymmetric SG design. A first exemplary design may include an ion beam etching (IBE) approach. After the formation of the side shields, IBE can be applied to mill a portion of the field dielectric material.

[0042] Applying IBE can include selecting different IBE angles in the range of 0 to 20 degrees parallel to the ABS direction, and tilt angles of 45 to 75 degrees perpendicular to the substrate. Furthermore, the etching time can be adjusted during the IBE process, and different amounts of insulating material can be formed on the left and right sides of the side shield. Once the insulator is formed, the ruthenium (Ru) SG deposition and MP plating processes follow to fabricate the MP structure.

[0043] A second approach may involve using ion beam deposition (IBD). After side shield and symmetric insulator formation by the IBE process, a metal layer can be deposited. This metal layer may include materials such as tantalum (Ta), ruthenium (Ru), or other suitable metallic materials.

[0044] The IBD process can include adjusting the deposition angle to 0-20 degrees parallel to the ABS direction, or the tilt angle to 10-30 degrees perpendicular to the substrate. Furthermore, the deposition time can be adjusted to deposit different amounts of metal on the left and right sides of the side shield. After the metal deposition is complete, an MP plating process can be performed to form the MP structure.

[0045] Figure 8A is an exemplary top view 800A for generating an asymmetric MP write head. As shown in Figure 8A, the side shield portions 802A-B may be positioned adjacent to the dielectric material 806. The IBE or IBD process described herein can mill a portion of the dielectric material 806 in the direction indicated by the arrow.

[0046] Figure 8B is an exemplary air bearing surface (ABS) diagram of an asymmetric writing head formed by the IBE approach 800B. As shown in Figure 8B, portions of dielectric materials 806A, 806B can be milled differently to provide asymmetric MP material. For example, the first dielectric material 806A may be milled less than the second dielectric material 806B. Furthermore, metallic materials 808A, 808B may be placed on top of the dielectric materials 806A, 806B, and MP material 804 may be formed on top of the metallic materials 808A, 808B.

[0047] Figure 8C is an exemplary air bearing surface (ABS) diagram of an asymmetric writing head formed via the IBD approach 800C. As shown in Figure 8C, portions of dielectric material 806A and 806B may be placed on top of the respective SS portions 802A and 802B. Furthermore, metallic material portions 808A and 808B may be placed on top of the dielectric materials 806A and 806B by the IBD process. The metallic materials 808A and 808B may be deposited differently such that more material is placed on the first metallic material portion 808A than on the second metallic material portion 808B. The thickness of the first metallic material portion 808A may be greater than the thickness of the second metallic material portion 808B. MP material 804 may be placed on top of the metallic material portions 808A and 808B using any of the various processes.

[0048] In some cases, conventional magnetic recording (CMR) writing can have a fixed track pitch for all areas, as signal tracks do not need to overlap. In some cases, single magnetic recording (SMR) writing modes may have limitations in write capability compared to CMR. Several factors can be important parameters for CMR and SMR writing modes. In CMR mode, the gating factor for achieving a higher ADC usually arises from the skew angle. In the inner disk / outer disk (ID / OD) area, the skew angle can lead to an increase in the erase width (EW), while a smaller EW results in a higher TPI. However, a smaller EW can lead to weaker write capability. This can be particularly noticeable when the MP width is reduced to less than 40 nanometers (nm). Therefore, in CMR mode, further reducing the EW without losing signal strength and write capability can be a challenge. In SMR mode, the smaller the erase bandwidth (EB), the stronger the signal becomes after a single write; therefore, EB can be a deterministic factor in obtaining an SMR ADC.

[0049] To evaluate asymmetric SG designs, multilayer media modeling can be performed. For example, a model can be based on two symmetric SG designs (e.g., 40 / 40nm and 50 / 50nm SGs), and two models can be based on asymmetric SG designs (e.g., 20 / 60nm and 40 / 60nm). A wider PWA with a narrower SG may also be included (PWA45 / SG20). In Figure 3(a), it can be clearly seen that the asySG design does not show a loss of write capability compared to the conventional approach for further performance improvement (wider PWA with a narrower SG). On the other hand, as shown in Figure 3(b), compared to the conventional design, the asySG design shows a large cross-track (CT) gradient gain on the nSG side, which is favorable for SMR writing.

[0050] Figure 9 shows a graph representation of the magnetic field (Hy) as a function of Ew. As described above, graph representation 900 can show Hy as a function of Ew for each of several models. Hy can be measured using the Oersted method, and Ew can be measured in nanometers (nm).

[0051] Figure 10 shows graph 1000 of the DT gradient / CT gradient nSG / CT gradient wSG as a function of EW. As described above, graph 1000 can show the DT gradient (Oe / nm), CT gradient nSG (Oe / nm), and CT gradient wSG (Oe / nm) as functions of Ew (nm) for each of several models.

[0052] Furthermore, to evaluate the EB and maximum TAA of an asySG design, media modeling can mimic any of various test methods. For example, as shown in Figure 11, a smaller EB benefit can be observed in asySG designs on the narrower SG side, while a slight increase in EB can be provided on the wider SG side. Figure 11 is an exemplary graph representation showing exemplary EBi and Ebo for each of several exemplary write head models. For example, in Figure 11, the inside EB (EBi) and outside EB (EBo) can be shown in the inside diameter (ID), middle diameter (MD), and outer diameter (OD) regions, respectively, for several asymmetric write head designs.

[0053] Furthermore, the maximum TAA gain can be observed on the nSG side. In the case of SMR writing, the head performs a single write on the smallest EB side to obtain the best ADC. Figure 12 is an exemplary graph of the maximum TAA SMA for each of several regions. In Figure 12, display 1200 can show the maximum TAA for SMR recording in the ID, MD, and OD regions.

[0054] Figure 12 also shows a table of EB gain and maximum TAA gain for asySG designs compared to symmetric designs with nominal total SG. As shown in the table in Figure 12, when the best EB side of an asymmetric SG design for SMR writing is selected and allocated to the OD region, the EB can be reduced by at least 1 nm in the OD and 0.8 nm in the MD, while there is a disadvantage of -0.5 nm in the ID, resulting in a better or equal maximum TAA and the best ADC gain for SMR.

[0055] In the case of CMR writing, reducing EW can be a key feature of improved write heads. By modeling single-track writing, the EW and maximum TAA signals can be determined by reading the written track.

[0056] Figure 13 shows an exemplary graphical representation of the average maximum TAA relative to EW for a write head design. As shown in Figure 13, a wider PWA with a narrower SG (PWA45 / SG20) can reduce EW. However, the final maximum TAA signal may be lower than the reference sample (PWA35 / SG40) due to weaker write capability. To overcome this problem, the asySG design (PWA35 / SG20-60) can provide EW reduction without the disadvantage from the maximum TAA signal, as shown in Figure 13. By extracting EW reduction numbers from different zones, it can be seen that CMR may have an advantage, which may mean a smaller EW with equivalent maximum TAA signal strength. Furthermore, the table in Figure 13 can show the EW gain in the asySG design.

[0057] The asymmetric designs described herein can be manufactured by IBE or IBD processes without the use of new masks. These designs can maintain similar EW / FWHM without losing maximum TAA (Signal Track Strength), while also benefiting the CMR write mode. EB can be improved on the narrow SG side, and the overall SMR ADC gain can be achieved if the best EB gain is allocated to the OD write area. This device may be compatible with existing cTPP / TPP / GMAC / GMR3B designs.

[0058] In some examples, the asymmetric SG of a write head may include a magnetic principal pole (MP) that provides a strongly concentrated magnetic field for writing to a magnetic medium. The write head may also include a magnetic trailing shield (TS) consisting of a hot seed (HS) and a write shield (WG) to collect magnetic flux from the MP and increase the downtrack gradient.

[0059] The write head may also include two magnetic side shields (SS) to confine magnetic flux in the crosstrack direction and increase the crosstrack gradient. The SS or MP may be shifted to either the left or the right to create an asymmetric SG structure.

[0060] In some examples, the write head may include a magnetic leading edge taper (LET) to create a taper on the front side of the MP. The write head may also include conductive material in the write gap (WG) and leading gap (LG) to allow current to flow, and an insulating layer to guide and concentrate the bias current.

[0061] The writing head can be manufactured by ion beam etching (IBE) techniques by applying a directional etching strategy during the SS manufacturing process. The writing head can also be manufactured by ion beam deposition (IBD) techniques by directionally depositing either a metal or insulating layer onto the top of the SS. The etching material or deposition material is aluminum oxide (AlO x ), silicon oxide (SiO x ), aluminum nitride (AlN x This could be an insulating material such as ), a metal such as ruthenium (Ru) or nickel / chromium (Ni / Cr) multilayer, or any material having suitable thermal conductivity and electrical conductivity.

[0062] In some examples, the SG width can range from 5 nm to 100 nm on each side, and the difference between distances can range from 1 to 50 nm. The write head can be shifted to the left or right as long as a gap exists between MP and SS, which can be achieved by manufacturing an asymmetric insulating layer or an asymmetric metal layer.

[0063] It will be understood that the terms “top,” “bottom,” “upward,” “downward,” and “x direction,” “y direction,” and “z direction,” as used herein, are convenient terms used to indicate the spatial relationships of parts relative to each other, rather than any specific spatial or gravitational orientation. Therefore, these terms are intended to encompass assemblies of component parts, regardless of whether the assembly is oriented in a specific orientation shown in the drawings and described herein, inverted from that orientation, or in any other rotational direction.

[0064] It will be understood that the term “invention” as used herein should not be construed to mean that only a single invention having a single essential element or set of elements is presented. Similarly, it will be understood that the term “invention” may encompass several distinct innovations, each of which may be considered a distinct invention. Although the invention has been described in detail with respect to preferred embodiments and their drawings, it should be apparent to those skilled in the art that various adaptations and modifications of embodiments of the invention can be achieved without departing from the spirit and scope of the invention. Accordingly, it should be understood that the above detailed description and accompanying drawings are not intended to limit the scope of the invention and should be inferred solely from the following claims and their appropriately interpreted legal equivalents.

Claims

1. Magnetic principal pole (MP), A magnetic trailing shield, comprising at least a hot seed (HS) layer, is positioned adjacent to the MP. It comprises a first side shield (SS) portion located on the first side of the central axis and a second SS portion located on the second side of the central axis, The center of the MP is positioned offset from the central axis such that the distance between the center of the MP and the first SS portion is smaller than the distance between the center of the MP and the second SS portion. Write head.

2. The HS layer is configured to collect magnetic flux from the MP and increase the downtrack gradient. The first SS portion and the second SS portion are configured to confine magnetic flux in the cross-track direction in order to increase the cross-track gradient. The writing head according to claim 1.

3. A first dielectric layer is disposed adjacent to the first SS portion, A second dielectric layer is disposed adjacent to the second SS portion, A first metal layer disposed between the MP and the first dielectric layer, The system further comprises a second metal layer disposed between the MP and the second dielectric layer. The writing head according to claim 1.

4. The second dielectric layer is milled to a thickness less than the thickness of the first dielectric layer by applying directional etching to the first dielectric layer and / or the second dielectric layer using an ion beam etching (IBE) process. The writing head according to claim 3.

5. The directional etching is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 45 to 75 degrees perpendicular to the writing head. The writing head according to claim 4.

6. The thickness of the first metal layer is greater than the thickness of the second metal layer, based on an ion beam deposition (IBD) process that provides directional deposition on the first metal layer and / or the second metal layer. The writing head according to claim 3.

7. The directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 10 to 30 degrees perpendicular to the writing head. The writing head according to claim 6.

8. The first dielectric layer and / or the second dielectric layer is made of aluminum oxide (AlO ｘ ), silicon oxide (SiO ｘ ), aluminum nitride (AlN ｘ ) including insulating material, The writing head according to claim 3.

9. The first metal layer and / or the second metal layer comprises a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer. The writing head according to claim 3.

10. The width of the side gap (SG) between the first SS portion and the second SS portion is in the range of 5 to 100 nanometers (nm) on each side of the central axis. The writing head according to claim 1.

11. The difference between the distance between the center of the MP and the first SS portion and the distance between the center of the MP and the second SS portion is in the range of 1 to 50 nm. The writing head according to claim 1.

12. The step of providing a write head structure having at least a first side shield (SS) portion located on the first side of the central axis and a second SS portion located on the second side of the central axis, The steps include: placing a first dielectric layer adjacent to the first SS portion; The steps include: placing a second dielectric layer adjacent to the second SS portion; The steps include: arranging a first metal layer adjacent to the first dielectric layer; The steps include: placing a second metal layer adjacent to the second dielectric layer; The steps include: performing an ion beam etching (IBE) process by applying directional etching to the first dielectric layer and / or the second dielectric layer in order to create different thicknesses between the first dielectric layer and the second dielectric layer; or performing an ion beam deposition (IBD) process by providing directional deposition on the first metal layer and / or the second metal layer in order to create different thicknesses between the first metal layer and the second metal layer; The process includes the step of arranging a main pole (MP) between the first SS portion and the second SS portion, The center of the MP is positioned offset from the central axis such that the distance between the center of the MP and the first SS portion is smaller than the distance between the center of the MP and the second SS portion. method.

13. The directional etching is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 45 to 75 degrees perpendicular to the writing head. The method according to claim 12.

14. The directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 10 to 30 degrees perpendicular to the writing head. The method according to claim 12.

15. The first dielectric layer and / or the second dielectric layer is made of aluminum oxide (AlO ｘ ), silicon oxide (SiO ｘ ), aluminum nitride (AlN ｘ ) including insulating material, The method according to claim 12.

16. The first metal layer and / or the second metal layer comprises a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer. The method according to claim 12.

17. Magnetic principal pole (MP), A first metal layer is positioned adjacent to the first side of the MP, A second metal layer is positioned adjacent to the second side of the MP, A first dielectric layer is disposed adjacent to the first metal layer, A second dielectric layer is disposed adjacent to the second metal layer, A first side shield (SS) portion is located on the first side of the central axis and adjacent to the first dielectric layer, It comprises a second SS portion located on the second side of the central axis, The center of the MP is positioned offset from the central axis such that the distance between the center of the MP and the first SS portion is smaller than the distance between the center of the MP and the second SS portion. device.

18. The second dielectric layer is milled to a thickness less than the thickness of the first dielectric layer by applying directional etching to the first dielectric layer and / or the second dielectric layer using an ion beam etching (IBE) process. The directional etching is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 45 to 75 degrees perpendicular to the device. The device according to claim 17.

19. The thickness of the first metal layer is greater than the thickness of the second metal layer, based on an ion beam deposition (IBD) process that provides directional deposition on the first metal layer and / or the second metal layer. The directional deposition is performed at an angle in the range of 0 to 20 degrees parallel to the direction of the air bearing surface (ABS) and at an inclination angle in the range of 10 to 30 degrees perpendicular to the device. The device according to claim 17.

20. The first dielectric layer and / or the second dielectric layer include an insulating material containing aluminum oxide (AlO ｘ ), silicon oxide (SiO ｘ ), and aluminum nitride (AlN ｘ ). The first metal layer and / or the second metal layer comprises a ruthenium (Ru) material or a nickel / chromium (Ni / Cr) multilayer. The device according to claim 17.

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