Indication device

Abstract

The region where the active layer has not formed is effectively utilized. [Solution] The semiconductor device has a first conductive layer and a second conductive layer on an insulating surface, a first insulating layer on the first conductive layer and on the second conductive layer, a first oxide semiconductor layer and a second oxide semiconductor layer on the first insulating layer, a third conductive layer on the first oxide semiconductor layer, a fourth conductive layer on the first oxide semiconductor layer, a second insulating layer on the third conductive layer and on the fourth conductive layer, and a fifth conductive layer on the second insulating layer. The third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region that overlaps with the first conductive layer, the second oxide semiconductor layer has a region that overlaps with the fifth conductive layer, and the second oxide semiconductor layer has a region that intersects with the second conductive layer.

Claims

1. A first conductive layer having the function of a transistor gate electrode and the function of gate wiring, An insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the transistor, A first semiconductor layer having a region in contact with the insulating layer and having a channel formation region for the transistor, A second semiconductor layer having a region in contact with the insulating layer and a region overlapping with the first conductive layer, A second conductive layer having a region in contact with the first semiconductor layer and having the function of either the source electrode or the drain electrode of the transistor, and the function of a source wire, A third conductive layer having a region in contact with the first semiconductor layer and functioning as the other of the source electrode or drain electrode of the transistor, A fourth conductive layer having a region that overlaps with the first conductive layer and a region that is in contact with the second semiconductor layer, The third conductive layer is always electrically connected to the fifth conductive layer, and the fifth conductive layer has the function of a pixel electrode. The area of ​​the region where the first semiconductor layer and the first conductive layer overlap is larger than the area of ​​the region where the second semiconductor layer and the first conductive layer overlap. A display device in which the area of ​​the region where the second semiconductor layer and the first conductive layer overlap is larger than the area of ​​the region where the fourth conductive layer and the first conductive layer overlap.

2. A first conductive layer having the function of a transistor gate electrode and the function of gate wiring, An insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the transistor, A first semiconductor layer having a region in contact with the insulating layer and having a channel formation region for the transistor, A second semiconductor layer having a region in contact with the insulating layer and a region overlapping with the first conductive layer, A second conductive layer having a region in contact with the first semiconductor layer and having the function of either the source electrode or the drain electrode of the transistor, and the function of a source wire, A third conductive layer having a region in contact with the first semiconductor layer and functioning as the other of the source electrode or drain electrode of the transistor, A fourth conductive layer having a region that overlaps with the first conductive layer and a region that is in contact with the second semiconductor layer, The third conductive layer is always electrically connected to the fifth conductive layer, and the fifth conductive layer has the function of a pixel electrode. In the direction extending along the long axis of the first conductive layer, the width of the region where the first semiconductor layer and the first conductive layer overlap is greater than the width of the region where the second semiconductor layer and the first conductive layer overlap. A display device wherein, in the direction extending along the long axis of the first conductive layer, the width of the region where the second semiconductor layer and the first conductive layer overlap is greater than the width of the region where the fourth conductive layer and the first conductive layer overlap.

3. In claim 1 or claim 2, The first to fourth conductive layers are a display device having molybdenum and copper.

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