Indication device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-02-25
- Publication Date
- 2026-06-09
AI Technical Summary
【0020】 本発明の一態様は、狭額縁の表示装置を提供することができる。または、デザインの自 由度を向上させる表示装置を提供することができる。または、精細度を高めることができ る画素回路を有する表示装置を提供することができる。または、回路設計の複雑化を回避 できる表示装置を提供することができる。または、低消費電力の表示装置を提供すること ができる。または、新規な表示装置を提供することができる。または上記表示装置(表示 パネル)を備えた電子機器を提供することができる。または、新規な電子機器を提供する ことができる。
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Figure 2026094251000001_ABST
Abstract
Claims
1. The display unit is located on the circuit board. The display unit is a display device having a plurality of pixels having light-emitting elements, The aforementioned display unit is A first conductive layer and A first insulating layer having a region located above the first conductive layer, A first semiconductor layer having a region located above the first insulating layer and having a channel formation region for the first transistor, A second insulating layer having a region located above the first semiconductor layer, A second conductive layer having a region located above the second insulating layer and a region that functions as the gate electrode of the second transistor, A third insulating layer having a region located above the second conductive layer and a region that functions as a gate insulating layer for the second transistor, A second semiconductor layer having a region located above the third insulating layer and having a channel formation region for the second transistor, A third conductive layer having a region in contact with the upper surface of the second semiconductor layer and a region that functions as either the source electrode or the drain electrode of the second transistor, A fourth conductive layer having a region in contact with the upper surface of the second semiconductor layer and a region that functions as the other of the source electrode or drain electrode of the second transistor, A fourth insulating layer having a region located on the third conductive layer and a region located on the fourth conductive layer, The substrate is flexible, The light-emitting element has a region located above the fourth insulating layer, The first conductive layer has a region that overlaps with the first semiconductor layer, The first conductive layer has a region that overlaps with the second semiconductor layer, The second conductive layer is located on a different layer from the gate electrode of the first transistor. The second semiconductor layer does not have a region that overlaps with the first semiconductor layer. A display device wherein the fourth conductive layer has a region that overlaps with the first conductive layer via the first semiconductor layer.
2. The display unit is located on the circuit board. The display unit is a display device having a plurality of pixels having light-emitting elements, The aforementioned display unit is A first conductive layer and A first insulating layer having a region located above the first conductive layer, A first semiconductor layer having a region located above the first insulating layer and having a channel formation region for the first transistor, A second insulating layer having a region located above the first semiconductor layer, A second conductive layer having a region located above the second insulating layer and a region that functions as the gate electrode of the second transistor, A third insulating layer having a region located above the second conductive layer and a region that functions as a gate insulating layer for the second transistor, A second semiconductor layer having a region located above the third insulating layer and having a channel formation region for the second transistor, A third conductive layer having a region in contact with the upper surface of the second semiconductor layer and a region that functions as either the source electrode or the drain electrode of the second transistor, A fourth conductive layer having a region in contact with the upper surface of the second semiconductor layer and a region that functions as the other of the source electrode or drain electrode of the second transistor, A fourth insulating layer having a region located on the third conductive layer and a region located on the fourth conductive layer, The substrate is flexible, The light-emitting element has a region located above the fourth insulating layer, The first conductive layer has a region that overlaps with the first semiconductor layer, The first conductive layer has a region that overlaps with the second semiconductor layer, The second conductive layer is located on a different layer from the gate electrode of the first transistor. The second semiconductor layer does not have a region that overlaps with the first semiconductor layer. A display device wherein the fourth conductive layer has a region that overlaps with the first conductive layer via the channel formation region of the first transistor.
3. In claim 1 or claim 2, The second semiconductor layer comprises indium, gallium, and zinc, in a display device.
4. In any one of claims 1 to 3, The light-emitting element is a display device having a phosphorescent layer.
5. In claim 4, The phosphorescent emitting layer comprises a phosphorescent material and a host material, and is a display device.