Semiconductor equipment

Abstract

To provide a semiconductor device that can retain its stored data even when power is not supplied and has no limitations on the number of write cycles. [Solution] The semiconductor device includes a first wiring, a second wiring, a third wiring, and a fourth wiring, a first transistor 160 having a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor 162 having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided on a substrate containing a semiconductor material, and the second transistor is composed of an oxide semiconductor layer. The first gate electrode is electrically connected to either the second source electrode or the second drain electrode, the first wiring is electrically connected to the first source electrode, the second wiring is electrically connected to the first drain electrode, the third wiring is electrically connected to either the second source electrode or the other of the second drain electrode, and the fourth wiring is electrically connected to the second gate electrode.

Claims

1. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. A semiconductor device in which the source or drain of the second transistor is electrically connected to the gate of the first transistor, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second insulating film having a region positioned above the second conductive film and functioning as a gate insulating film of the second transistor, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, It comprises a third insulating film having a region positioned above the oxide semiconductor film, In a plan view, the first conductive film does not have a region that overlaps with the second channel-forming region. Semiconductor equipment.

2. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. A semiconductor device in which the source or drain of the second transistor is electrically connected to the gate of the first transistor, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second insulating film having a region positioned above the second conductive film and functioning as a gate insulating film of the second transistor, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, It comprises a third insulating film having a region positioned above the oxide semiconductor film, In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. The second insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. The third insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. Semiconductor equipment.

3. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. A semiconductor device in which the source or drain of the second transistor is electrically connected to the gate of the first transistor, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second insulating film having a region positioned above the second conductive film and functioning as a gate insulating film of the second transistor, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film, A third conductive film having a region positioned above the third insulating film, The first conductive film is electrically connected to the oxide semiconductor film via the third conductive film. In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. In a plan view, the maximum length of the oxide semiconductor film in the channel length direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. In a plan view, the maximum length of the third conductive film in the channel length direction of the second transistor is greater than the maximum length of the third conductive film in the channel width direction of the second transistor. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the region in the channel width direction of the second transistor in which the third conductive film overlaps with the first conductive film. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. Semiconductor equipment.

4. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. A semiconductor device in which the source or drain of the second transistor is electrically connected to the gate of the first transistor, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second insulating film having a region positioned above the second conductive film and functioning as a gate insulating film of the second transistor, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film, A third conductive film having a region positioned above the third insulating film, The first conductive film is electrically connected to the oxide semiconductor film via the third conductive film. In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. In a plan view, the maximum length of the oxide semiconductor film in the channel length direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. In a plan view, the maximum length of the third conductive film in the channel length direction of the second transistor is greater than the maximum length of the third conductive film in the channel width direction of the second transistor. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the region in the channel width direction of the second transistor in which the third conductive film overlaps with the first conductive film. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. The second insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. The third insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. Semiconductor equipment.

5. In claim 3 or claim 4, A fourth insulating film having a region positioned above the third insulating film and a region positioned below the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to the silicon semiconductor layer having the first channel-forming region, A constant potential is applied to the fourth conductive film. When the constant potential is applied to either the source or the drain of the first transistor, the potential of the other source or drain of the first transistor is controlled according to the charge held at least at the gate of the first transistor. The third conductive film and the fourth conductive film have regions that are in contact with the fourth insulating film. Semiconductor equipment.

6. In any one of claims 1 to 5, In a plan view, the channel formation region of the first transistor has a region in which current flows in a direction intersecting the channel length direction of the second transistor. Semiconductor equipment.

7. In any one of claims 1 to 6, The charge held at the gate of the first transistor corresponds to three or more potentials, Semiconductor equipment.

8. In any one of claims 1 to 7, The first insulating film comprises nitrogen and silicon, Semiconductor equipment.

9. In any one of claims 1 to 8, A signal is input to the gate of the first transistor via the second transistor. Semiconductor equipment.

10. In any one of claims 1 to 9, The second transistor has an off-current of 1 × 10⁻⁶ －１８ It is less than or equal to A / μm. Semiconductor equipment.

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