Light-emitting element

JP2026094326APending Publication Date: 2026-06-09SEMICON ENERGY LAB CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-03-03
Publication Date
2026-06-09

AI Technical Summary

Benefits of technology

【0021】 本発明の一態様により、蛍光材料を有する発光素子において、発光効率が高い発光素子を 提供することができる。または、本発明の一態様により、発光成分のうちTTAによる遅 延蛍光成分の割合が高い発光素子を提供することができる。または、本発明の一態様によ り、発光効率が高く、消費電力が低減された、新規な発光装置を提供することができる。 または、本発明の一態様により、新規な表示装置を提供することができる。

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Abstract

To provide a light-emitting element with high luminescence efficiency, which has a fluorescent material. Alternatively, to provide a light-emitting element in which the proportion of the delayed fluorescence component due to TTA is high among the luminescent components. Alternatively, to provide a novel light-emitting device with high luminous efficiency and reduced power consumption. [Solution] The system has an anode, a cathode, and an EL layer sandwiched between the anode and the cathode, and the EL layer is It has an emissive layer and an electron transport layer in contact with the emissive layer, the emissive layer has a host material and electron transport The layer has a first material, and the LUMO level of the first material is higher than the LUMO level of the host material. Low, and the proportion of the delayed fluorescence component due to TTA in the emission exhibited by the EL layer is 1% of the total. A light-emitting element that is 0% or more. In one embodiment of the present invention, the light emitted by the EL layer The proportion of the delayed fluorescence component due to TTA may be 15% or more of the total.
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Claims

[Claim 1] It has an anode, a cathode, and an EL layer sandwiched between the anode and the cathode, The EL layer comprises an emissive layer and an electron transport layer in contact with the emissive layer. The light-emitting layer has a host material, The electron transport layer has a first material, The LUMO level of the first material is lower than the LUMO level of the host material. A light-emitting element in which the EL layer exhibits light emission in which the delayed fluorescence component due to triplet-triplet annihilation accounts for 10% or more of the total.