Gas cluster ion beam apparatus
The gas cluster ion beam apparatus efficiently neutralizes ions using a neutralization gas introduction and reflective electrode, addressing the challenges of polyvalent ions and expensive vacuum systems, achieving smooth surface processing with reduced costs and length.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- IIPT INC
- Filing Date
- 2025-11-07
- Publication Date
- 2026-06-12
AI Technical Summary
Conventional gas cluster ion beam apparatuses face challenges in achieving smooth surface processing due to the generation of polyvalent ions, which cause crater-like irradiation marks, and require expensive vacuum systems to maintain high gas pressures for neutralization, leading to apparatus lengthening and increased costs.
A gas cluster ion beam apparatus with a neutralization gas introduction device and a reflective electrode to neutralize cluster ions efficiently, using the same or different gases for neutralization, and a reflective electrode to remove unneutralized ions, without the need for high-pressure regions or expensive vacuum systems.
Enables stable, efficient, and cost-effective neutralization of gas cluster ions, achieving surface roughness of Ra < 1 nm with reduced apparatus length and cost, by using a neutral beam to perform etching and trimming.
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