Inspection apparatus, film deposition apparatus, inspection method, and method for manufacturing electronic devices

Abstract

To provide a technology that improves the convenience of measuring the film thickness of a deposited film on a substrate. [Solution] The film deposition apparatus of the present invention comprises a measuring means for optically measuring the film thickness by irradiating a film deposited on a substrate with light, and a substrate holding means for holding the substrate during measurement by the measuring means. A predetermined range of the surface of the substrate holding means facing the substrate, located in the direction of light irradiation, is subjected to a reflection reduction treatment such that the reflection of light irradiated from the measuring means toward the measuring means is reduced compared to the surface of the substrate holding means facing the substrate, which is outside the predetermined range.

Description

Technical Field

[0001] The present invention relates to an inspection apparatus, a film forming apparatus, an inspection method, and a method for manufacturing an electronic device for measuring the film thickness of a material vapor-deposited on a substrate.

Background Art

[0002] In the manufacture of an organic EL display device (organic EL display) or the like, a vapor deposition material may be vapor-deposited on a substrate held by an electrostatic chuck (ESC). Patent Document 1 discloses measuring the film thickness of a film vapor-deposited on a substrate in an inspection chamber.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Here, in measuring the film thickness of a film formed on a substrate, light transmitted through the substrate to be measured may be reflected by the ESC, which may affect the measurement accuracy.

[0005] In view of the above problems, an object of the present invention is to provide a technique for improving the convenience in measuring the film thickness of a film-formed substrate.

Means for Solving the Problems

[0006] To solve the above problems, an inspection apparatus according to the present invention includes: measurement means for optically measuring the film thickness by irradiating light onto a film formed on a substrate; substrate holding means for holding the substrate during measurement by the measurement means; and A predetermined area of ​​the surface of the substrate holding means facing the substrate, located in the direction of the light irradiation, is subjected to a reflection reduction treatment such that the reflection of light irradiated from the measuring means toward the measuring means is reduced compared to a surface of the substrate holding means facing the substrate that is different from the predetermined area. [Effects of the Invention]

[0007] This provides a technology that improves the convenience of measuring the film thickness of a deposited substrate. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic diagram showing part of the configuration of a film deposition apparatus according to one embodiment. [Figure 2] A schematic diagram illustrating the components of the handover room. [Figure 3] Diagram illustrating film thickness measurement. [Figure 4] Perspective view of the adsorption unit. [Figure 5] A diagram showing the adsorption surface of the adsorption unit. [Figure 6] A diagram showing an example of the configuration of the measurement unit. [Figure 7] This figure shows an example of the measurement results of reflectance for different film thicknesses. [Figure 8] A diagram showing the reflected light from the measuring head. [Figure 9] Figures (A) to (C) show examples of reflection reduction processing according to this embodiment. [Figure 10] Figures (A) to (C) show examples of reflection reduction processing according to this embodiment. [Figure 11] A flowchart illustrating an example of control for an inspection device. [Figure 12] (A) is an overall diagram of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of a single pixel. [Modes for carrying out the invention]

[0009] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims, and not all combinations of features described in the embodiments are essential to the invention. Two or more features from the multiple features described in the embodiments may be combined arbitrarily. Furthermore, identical or similar configurations will be given the same reference numeral, and redundant descriptions will be omitted.

[0010] In each figure, the XY direction indicates the horizontal direction, and the Z direction indicates the vertical direction. Furthermore, for the sake of clarity, some reference numerals may be omitted when multiple identical elements are shown.

[0011] <Film forming equipment> Figure 1 is a schematic diagram showing the configuration of a film deposition apparatus 1 according to one embodiment. The film deposition apparatus 1 is an apparatus for depositing a film on a substrate 100. The film deposition apparatus 1 is used, for example, in the manufacture of display panels for organic EL display devices for smartphones, in which the substrate 100 is sequentially transported to the film deposition block 301, and organic EL is deposited on the substrate 100.

[0012] The deposition block 301 has a transport chamber 302 which has an octagonal shape in plan view, surrounded by multiple deposition chambers 303a to 303d where the deposition process on the substrate 100 takes place, and a mask storage chamber 305 where masks before and after use are stored. A transport robot 302a is positioned in the transport chamber 302 to transport the substrate 100. The transport robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand horizontally. In other words, the deposition block 301 is a cluster-type deposition unit (cluster-type deposition apparatus) in which multiple deposition chambers 303a to 303d are arranged to surround the transport robot 302a. In the following description, when the deposition chambers 303a to 303d are not specifically distinguished, they may be referred to as deposition chamber 303. In this embodiment, in the deposition chamber 303, the substrate 100 is positioned with the deposition surface facing downwards, and a deposition unit located below the substrate 100 performs deposition by depositing the deposition material upwards.

[0013] In the conveyance direction (arrow direction) of the substrate 100, a buffer chamber 306, a turning chamber 307, and a transfer chamber 308 are arranged upstream and downstream of the film formation block 301, respectively. In the manufacturing process, each chamber is maintained in a vacuum state. Although only one film formation block 301 is shown in FIG. 1, the film formation apparatus 1 according to the present embodiment has a plurality of film formation blocks 301, and the plurality of film formation blocks 301 have a configuration connected by a connecting device composed of a buffer chamber 306, a turning chamber 307, and a transfer chamber 308. Note that the configuration of the connecting device is not limited to this, and for example, it may be composed of only the buffer chamber 306 or the transfer chamber 308.

[0014] The transfer robot 302a performs loading of the substrate 100 from the upstream transfer chamber 308 to the transfer chamber 302, transfer of the substrate 100 between the film formation chambers 303, transfer of the mask between the mask storage chamber 305 and the film formation chamber 303, and unloading of the substrate 100 from the transfer chamber 302 to the downstream buffer chamber 306.

[0015] The buffer chamber 306 is a chamber for temporarily storing the substrate 100 according to the operating status of the film formation apparatus 1. The buffer chamber 306 is provided with a multi-stage substrate storage shelf (also called a cassette) capable of storing a plurality of substrates 100 while keeping the processed surface (film formation surface) of the substrate 100 facing downward in the gravitational direction in a horizontal state, and a lifting mechanism for raising and lowering the substrate storage shelf to align the stage for loading or unloading the substrate 100 with the transfer position. Thereby, a plurality of substrates 100 can be temporarily accommodated and retained in the buffer chamber 306.

[0016] The rotating chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the rotating chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot 307a provided in the rotating chamber 307. The transport robot 307a provided in the rotating chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and hands it over to the transfer chamber 308, thereby swapping the front and rear ends of the substrate 100 in the transport direction (arrow direction) between the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is brought into the deposition chamber 303 is the same in each deposition block 301, so that the scanning direction and mask orientation for deposition on the substrate 100 can be matched in each deposition block 301. This configuration allows for the masks to be placed in the mask storage chamber 305 in the same orientation in each film deposition block 301, simplifying mask management and improving usability.

[0017] The transfer chamber 308 is a room for transferring the substrate 100, which has been brought in by the transfer robot 307a of the rotating chamber 307, to the transfer robot 302a of the downstream film deposition block 301. In this embodiment, as will be described later, the film thickness of the film deposited on the substrate 100 is measured in the transfer chamber 308. In other words, the transfer chamber 308 can be said to be an inspection room for inspecting the film formed on the substrate 100.

[0018] The control system of the film deposition apparatus 1 includes a host computer, a higher-level device 300 that controls the entire line, and control devices 309, 310, 311, 313a to 313d that control each component, which can communicate via a wired or wireless communication line 300a. The control devices 313a to 313d are provided corresponding to the film deposition chambers 303a to 303d and control the film deposition apparatus 1, which will be described later. Control device 309 controls the transport robot 302a. Control device 310 controls the transport robot provided in the swivel chamber 307. Control device 311 controls the equipment that performs alignment and film thickness measurement in the transfer chamber 308. The higher-level device 300 transmits information about the substrate 100 and instructions such as transport timing to each control device 309, 310, 311, 313a to 313d, and each control device 309, 310, 311, 313a to 313d controls each component based on the received instructions.

[0019] <Inspection equipment> Figure 2 is a schematic diagram of an inspection apparatus 110 according to one embodiment of the present invention, and in particular, is an inspection apparatus for forming a transfer chamber 308 downstream of a film deposition block 301. In each figure, including Figure 2, the X and Y directions are horizontal directions, and the Z direction is vertical direction. The inspection apparatus 110 includes a chamber 10, a suction unit 11, a moving unit 12, a suction assist unit 13, a positioning unit 14, a substrate support unit 15, and an inspection unit 16.

[0020] Chamber 10 has a box-like shape and forms a transfer chamber 308. The inside of Chamber 10 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, Chamber 10 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state.

[0021] In this embodiment, the pre-filmed substrate 100 to be inspected is transported into the chamber 10 by a transport robot 307a in the rotating chamber 307 through an entrance (not shown) formed in the chamber 10. The inspected substrate 100 is then transported out of the chamber 10 through an exit (not shown) formed in the chamber 10 by a transport robot (not shown) downstream of the transfer chamber 308.

[0022] In this embodiment, the inspection unit 16 performs an inspection that measures the film thickness of the film deposited on the substrate 100. The measurement results are used to control the film deposition apparatus in the deposition chamber 303, thereby improving the quality of the deposited film.

[0023] Figure 3 is an explanatory diagram for film thickness measurement. In the illustrated example, a film 101 such as an organic EL is deposited on the lower surface of a substrate 100, and the film 101 is deposited in a film deposition area which is the manufacturing area for electronic devices. An inspection film 103 for film thickness measurement is deposited in an inspection area 102 adjacent to the film deposition area of ​​film 101. The inspection area 102 is set at a predetermined position (in this embodiment, the edge of the substrate 100). In this embodiment, the inspection area 102 is distinguished from the film deposition area (manufacturing area), but the inspection area 102 may be part of the film deposition area. Film thickness measurement is performed by moving the measuring head 161 of the inspection unit 16 along the lower surface of the substrate 100 and reading the inspection film 103 with the measuring head 161. Also, in the example of Figure 1, three inspection films 103 are shown to be deposited in the inspection area 102, but it is sufficient and not limited to the generation of one or more inspection films. Furthermore, in the inspection area 102, no layer with a higher reflectivity than the inspection film 103 to be measured is formed. For example, if a metal layer with a higher reflectivity than the inspection film 103 is formed as the underlying reflective layer, the intensity of light reflection at the interface between the thin film and the underlying layer may change depending on the state of the interface between the thin film and the underlying layer, as well as the thickness and quality of the underlying layer, making it impossible to accurately measure the film thickness. Therefore, by not placing the underlying reflective layer in the inspection area 102, it is possible to prevent a decrease in the accuracy of film thickness measurement.

[0024] In this embodiment, the measuring head 161 optically measures the thickness of the inspection film 103. The measuring head 161 includes a light source that irradiates light onto the substrate 100 and a light receiving unit that receives reflected light from the substrate 100. The light received by the light receiving unit is spectrally analyzed, and the light intensity for each wavelength band is calculated. The thickness can be calculated by fitting the measured light intensity for each wavelength to an analysis model. Note that the method of measuring the thickness is not limited to this example, and the inspection content by the inspection unit 16 may be properties of the film other than thickness. In one example, white light in the ultraviolet to near-infrared region (200 to 800 nm) is transmitted from the light source and used for measurement.

[0025] The suction unit 11 will be described with reference to Figures 4 and 5. Figure 4 is a perspective view of the suction unit 11. Figure 5 is a diagram showing the suction surface of the suction unit 11. The suction unit 11 in this embodiment is a unit that attracts the substrate 100 by electrostatic force. However, the attraction method is not limited to this, and for example, a method that uses negative pressure for attraction or a method that uses adhesive force for attraction may also be used.

[0026] The suction unit 11 includes a frame 111 and a suction plate (electrode placement section) 112. The frame 111 is a rectangular member that forms the outer shape of the suction unit 11. For example, the frame 111 forms a frame that is equal to or larger than the size of the substrate 100 to be adsorbed by the suction unit 11. Components of the moving unit 12 and the positioning unit 14, which will be described later, are provided on the side surface of the frame 111.

[0027] The suction plate 112 is an electrostatic chuck that attracts the substrate 100 by electrostatic force. For example, the suction plate 112 has a structure in which an electrical circuit such as a metal electrode is embedded inside a matrix (also called a base) made of ceramic material. Multiple electrodes 115a to 115l (collectively referred to as electrodes 115) that generate electrostatic force are arranged on the lower surface 112a of the suction plate 112, and these each constitute an adsorption part. The lower surface 112a forms a horizontal adsorption surface that attracts the substrate 100. When positive (+) and negative (-) voltages are applied to the electrodes 115, polarization charges are induced in the substrate 100 through the ceramic matrix, and the substrate 100 is attracted to and held by the electrostatic force between the substrate 100 and the suction plate 112. In this embodiment, multiple electrodes 115a to 115l are arranged in a matrix, and the application of voltage can be controlled individually.

[0028] The lower surface 112a includes a portion 114 corresponding to the inspection area 102 (see Figure 3). When the substrate 100 is adsorbed, portion 114 overlaps with the inspection area (see Figure 3).

[0029] The suction plate 112 is also provided with a plurality of sensors 113 for detecting the adsorption and release of the substrate 100 from the lower surface 112a. The sensors 113 are, for example, touch sensors that detect contact with the substrate 100. In this embodiment, the plurality of sensors 113 are arranged in the Y direction at the center of the lower surface 112a in the X direction. However, the arrangement of the sensors 113 is not limited to this, and they may be at the periphery of the lower surface 112a. Furthermore, the detection of the adsorption and release of the substrate 100 may be carried out by, for example, a capacitance sensor using electrodes 115, a camera that photographs the position of the substrate 100 and the suction plate 112, or a laser displacement meter that detects the position of the substrate 100.

[0030] Refer to Figures 2 and 4. The moving unit 12 is a mechanism for moving the suction unit 11. In this embodiment, the moving unit 12 is a lifting unit that raises and lowers the suction unit 11 in the vertical direction. The moving unit 12 includes a movable part 121, a fixed part 122, and a drive part 123.

[0031] The movable part 121 supports the suction unit 11 and is provided to be movable together with the suction unit 11. The movable part 121 includes a lifting member 1211, a plurality of connecting members 1212, and a plurality of lifting shafts 1214. The lifting shafts 1214 are shaft members that extend in the Z direction so as to be suspended from the lifting member 1211, and only their lower ends are shown in Figure 4. The connecting members 1212 are members that are connected to the suction unit 11. The lifting shafts 1214 and the connecting members 1212 are connected via a joint 1213 equipped with a spherical bearing, and the connecting members 1212 are pivotable relative to the lifting shafts 1214.

[0032] The fixed part 122 is fixed to the upper wall 10a of the chamber 10. The drive unit 123 includes a drive source that generates a driving force to move the movable part 121, and a mechanism that converts the driving force of the drive source into translational motion. For example, the rotational driving force of an electric motor is converted into translational motion by a ball screw mechanism and transmitted to the movable part 121, causing the movable part 121 to move up and down. This causes the suction unit 11 to move up and down.

[0033] The suction assist unit 13 corrects the substrate 100 during suction by the suction unit 11, reducing the curvature of the substrate 100 so that it is adsorbed in a flatter position. The substrate 100 is supported at its periphery by the substrate support unit 15. As a result, the central part curves downward. The suction assist unit 13 corrects this curvature by pressing the periphery of the substrate 100 downward.

[0034] The suction assist unit 13 of this embodiment includes a shaft-shaped pressing part 131 that presses against the substrate 100 and a lifting part 132 that raises and lowers the pressing part 131. The lifting part 132 can appropriately employ known technologies such as an electric motor and a ball screw mechanism.

[0035] In this embodiment, the suction assist unit 13 presses the substrate 100 so that the substrate 100 supported by the substrate support unit 15 is partially separated from the suction unit 11. Specifically, the pressing portion 131 presses the substrate 100 from above through the through hole 1112 formed in the frame 111 of the suction unit 11. In addition, in this embodiment, the suction assist unit 13 uses the four pressing portions 131 to press the four corners of the substrate 100 from above, correcting the substrate 100 to a more horizontal position. Note that another form of the suction unit 11 may be one in which the central part of the substrate 100 is pressed from below upward.

[0036] The positioning unit 14 is a unit that positions the suction unit 11. Specifically, the positioning unit 14 positions the suction unit 11 to the position where inspection will be performed by the inspection unit 16. The positioning unit 14 includes a stopper portion 141 and a receiving portion 142.

[0037] The abutment portion 141 is provided on the side surface of the frame 111 of the suction unit 11. That is, the abutment portion 141 moves together with the suction unit 11 by the moving unit 12. In this embodiment, the abutment portion 141 is formed such that the portion that abuts against the receiving portion 142 is spherical.

[0038] The receiving portion 142 is fixed within the chamber 10 at a position corresponding to the abutment portion 141, and receives the abutment portion 141. Here, the receiving portion 142 is shown as a conical recess opening upward. The position of the suction unit 11 is defined by the fitting of the spherical portion of the receiving portion 142 into the recess of the receiving portion 142. In this embodiment, six abutment portions 141 are provided on the side surface of the frame 111 of the suction unit 11, and six receiving portions 142 are provided at corresponding positions. However, the number of abutment portions 141 and receiving portions 142 can be changed. Also, not all of the receiving portions 142 have to be conical recesses as shown. For example, multiple receiving portions 142 may include V-shaped grooves and flat surfaces. Furthermore, a so-called kinematic mount may be formed by the abutment portions 141 and receiving portions 142.

[0039] The substrate support unit 15 is a unit that supports the substrate 100. The substrate 100 to be inspected, which is brought into the inspection apparatus 110, is supported by the substrate support unit 15, and the inspected substrate 100 is discharged from the substrate support unit 15 to the outside. The substrate support unit 15 supports the substrate 100 from below. The substrate support unit 15 is located in the chamber 10 between the suction unit 11 and the inspection unit 16 in the vertical direction. In this embodiment, the substrate support unit 15 includes a frame 151 and a plurality of support members 152.

[0040] The frame 151 forms the outer shape of the substrate support unit 15 and is supported by the base member via a support column member. The base member is fixed inside the chamber 10. The frame 151 has a rectangular frame shape, and the substrate 100 is supported inside the frame formed by the frame 151.

[0041] The support member 152 is the part of the substrate support unit 15 that directly supports the substrate 100, and is formed, for example, by a leaf spring. In this embodiment, a plurality of support members 152 are supported by the frame 151 so as to extend inward into the frame formed by the frame 151, and the peripheral edge of the substrate 100 is placed on the plurality of support members 152. Because the support members 152 are elastic, the load acting on the substrate 100 when the substrate 100 supported by the plurality of support members 152 comes into contact with the suction unit 11 can be relieved by the elastic deformation of the support members 152.

[0042] The inspection unit 16 comprises a measuring head 161, a slider 162, and a guide rail 163. The guide rail 163 extends in the Y direction on a base member 164. The slider 162 is reciprocable in the Y direction guided by the guide rail 163. The mechanism for moving the slider 162 can be, for example, a ball screw mechanism driven by a motor or a linear motor. The measuring head 161 is mounted on the slider 162 and reciprocates in the Y direction together with the slider 162.

[0043] Refer to Figure 2. The control device 311 controls the inspection device 110. The control device 311 comprises a processing unit 311a, a storage unit 311b, an input / output interface (I / O) 311c, and a communication unit 311d. The processing unit 311a is a processor, such as a CPU, and controls the film deposition apparatus 1 by executing a program stored in the storage unit 311b. The storage unit 311b is a storage device such as a ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit 311a. The I / O 311c is an interface for sending and receiving signals between the processing unit 311a and external devices. External devices include actuators and sensors provided by the inspection device 110. The communication unit 311d is a communication device that communicates with a higher-level device or other control device via a communication line.

[0044] Figure 6 shows an example of the configuration of the inspection unit 16. The inspection unit 16 includes a light source 601, a vacuum flange 602, a light-emitting / receiving unit 603, a spectrometer 604, and a PC 605. The light source 601, the vacuum flange 602, the light-emitting / receiving unit 603, and the spectrometer 604 are connected by an optical fiber 611.

[0045] The light source 601 is a light-emitting device that can switch between outputting and not outputting light by operating a shutter 6011. In one example, the light source 601 includes a deuterium (D2) halogen light source 6012 that emits continuous light of halogen and deuterium from a single output port. In another example, the light source 601 includes a laser-driven plasma light source.

[0046] The vacuum flange 602 is positioned at the connection point between the vacuum environment and the atmospheric environment. For example, the light source 601, spectrometer 604, and PC 605 are located outside the chamber 10, which is kept in an atmospheric environment, and a light-emitting / receiving unit 603 is located on the measuring head 161 inside the chamber 10, which can be kept in a vacuum state. Optical fibers connecting the light-emitting / receiving unit 603 to the light source 601 and spectrometer 604 connect the inside and outside of the chamber 10 via the vacuum flange. In another example, a housing kept in an atmospheric environment may be provided inside the chamber 10, and the light source 601, spectrometer 604, and PC 605 may be located inside this housing.

[0047] The light-emitting and light-receiving unit 603 includes a light-emitting unit for emitting light emitted from the light source 601 vertically upward, and a light-receiving unit for receiving reflected light and sending it to the spectrometer 604. The light-emitting and light-receiving unit 603 also includes an aperture and a diaphragm. The aperture and diaphragm limit the amount and angle of light incident on or emitted from the light-emitting and light-receiving unit 603. This prevents, for example, light reflected from a part of the substrate 100 different from the measurement area from entering the spectrometer 604 as noise.

[0048] The spectrometer 604 has an input port for light, and it spectrally analyzes the input light to measure the light intensity for each wavelength band. It then transmits the information regarding the measured light intensity to the PC 605.

[0049] PC605 calculates the film thickness measurement based on the light intensity measured by the spectrometer 604. Known techniques can be used to calculate the film thickness measurement. For example, the relationship between the thickness of the film formed on the substrate 100 and the reflectance of the substrate 100 at a certain wavelength (nm) may be measured in advance, and the film thickness may be calculated from this relationship and the measured reflectance.

[0050] Figure 7 shows an example of the reflectance measurement results for each film thickness. As shown in Figure 7, compared to the reflectance of the substrate when the film thickness is 40 angstroms (Å), the reflectance around wavelengths of 280 and 330-420 nm is higher when the film thickness is 1600 Å. Therefore, the film thickness can be estimated by measuring the reflectance in this wavelength band. Alternatively, the film thickness can be estimated based on the reflectance measured in multiple frequency bands. For example, if the estimated film thickness based on the reflectance measurement results at wavelengths of 280 nm and 330 nm is 400 Å and 600 Å, respectively, the average of the estimated film thickness may be taken, and the film thickness may be considered to be 500 Å. In one embodiment, the measurement unit 29 may be capable of measuring thin films of about 100 to 1000 Å.

[0051] Figure 8 shows a cross-sectional view of the substrate and holding unit in the YZ plane passing through the inspection area 102. Light irradiated from the measuring head 161 at intensity Pt1 is reflected by the inspection film 103, and the reflected light is received by the measuring head 161 at intensity Pr1. This allows for the estimation of the film thickness as shown in Figure 7. In one example, the distance from the substrate 100 to the measuring head 161 is in the range of 5 to 10 mm.

[0052] Here, the irradiation light with intensity Pt2 that has passed through the inspection film 103 may be reflected by the surface of the substrate 100 and the portion 114 of the adsorption unit 11, resulting in reflected light with intensity Pr2. Since the intensity of the reflected light can also change depending on whether or not there is a gap between the substrate 100 and the adsorption plate 112, the accuracy of the film thickness measurement may decrease depending on the condition of the portion 114 facing the substrate surface on the opposite side of the inspection area 102 to which the light for film thickness measurement is irradiated.

[0053] In this embodiment, portion 114 is subjected to a reflection reduction treatment so that the intensity of the reflected light from the measuring head 161 to the measuring head is lower compared to a different region of portion 114 of the adsorption unit 11.

[0054] Figures 9(A) to 9(C) and 10(A) to 10(B) show examples of reflection reduction processing according to this embodiment.

[0055] In Figure 9(A), part 114 is subjected to a blackening treatment. For example, part 114 is blackened by placing at least one of the following micro-textured structures on part 114: a titania thermal spray coating mainly composed of titanium dioxide, an alumina thermal spray coating mainly composed of aluminum oxide, black chromium plating, and a velvet coating. This reduces the reflectivity due to the light-trapping effect of the micro-textured structure on part 114.

[0056] In Figure 9(B), a multilayer film called an AR (Anti-Reflection) coating is placed at site 114. In one example, a thin film is formed using at least one of magnesium fluoride (MgF2), zirconia (ZrO2), alumina (Al2O3), silicon dioxide (SiO2), and titanium oxide (TiO2). This reduces specular reflectivity and prevents light emitted from the measuring head 161 from being reflected back to the measuring head.

[0057] In the examples shown in Figures 9(A) and 9(B), the surface of the suction plate 112 may be ground before coating to prevent it from protruding in the substrate direction (the -Z direction in Figures 9(A) and (B)) due to the coating.

[0058] In Figure 9(C), sandblasting of part 114 allows for diffuse reflection instead of specular reflection, thereby reducing reflectivity. In one example, sandblasting is achieved by grinding the surface of part 114 by blowing an abrasive onto it with compressed air.

[0059] In Figure 10(A), the surface of part 114 is tapered by being ground at an angle relative to the surface of the adsorption plate 112 that adsorbs the substrate 100. As a result, the light irradiated onto part 114 is reflected in a direction different from that of the measuring head 161, thus preventing reflected light from part 114 from entering the measuring head 161. In the example in Figure 10, the surface of part 114 is shown as being ground to be inclined in the Y direction, but it may also be ground to be inclined in the X direction. In this embodiment, the spot diameter of the light-emitting / receiving part 603 is assumed to be 2 mm, and the inclination angle of part 114 is assumed to be 5 degrees. However, as long as reflected light does not enter the light-emitting / receiving part 603, the inclination angle can be changed as desired.

[0060] Furthermore, as shown in Figure 10(B), instead of oblique grinding, a recess may be provided in part 114, and a tapered structure may be provided in the recess. In this case, as shown in Figure 10(B), the tapered structure may be provided by fixing the tapered member after forming a recess in part 114, or the tapered member may be provided by oblique grinding the recess after forming a recess in part 114. Also, as shown in Figure 10(C), even if an opening is provided in part 114 of the suction plate 112 and a member having a tapered structure is placed in the opening, reflected light can be reduced in the same way as in Figures 10(A) and 10(B).

[0061] Furthermore, as shown in Figures 10(B) and 10(C), the recess provided in part 114 or the opening that penetrates the suction plate 112 in the direction from which light is irradiated should be processed in such a way that the reflection intensity of light irradiated from the measuring head 161 toward the measuring head 161 is reduced, and the arrangement is not limited to that of a tapered member. For example, the recess provided in part 114 may be subjected to blackening treatment as shown in Figures 9(A) to 9(C), AR coating, or sandblasting treatment.

[0062] Furthermore, multiple members may be placed in the recesses or openings provided in part 114. Additionally, a member having a tapered structure may be placed in the recesses or openings provided in part 114 that penetrate the suction plate 112 in the direction from which light is irradiated, and this member may be subjected to blackening treatment, AR coating, or sandblasting treatment.

[0063] As described above, in this embodiment, the inspection apparatus has a reflection reduction treatment applied to the substrate-side surface of the suction plate 112 that holds the substrate during film thickness measurement, in a predetermined area located in the direction of light irradiation for film thickness measurement, which reduces the reflection of light irradiated from the measuring head 161 back to the measuring head 161. This prevents a decrease in the accuracy of film thickness measurement due to reflection of the irradiated light from the surface of the suction plate 112, and improves the convenience of film thickness measurement.

[0064] <Testing Method> The inspection method for measuring film thickness will be explained with reference to Figure 11. The process shown in Figure 11 is performed when the substrate 100, which has been removed from the deposition chamber 303 after film deposition on the substrate in the deposition chamber 303, is brought into the transfer chamber 308.

[0065] In S1, it is determined whether or not the substrate 100 has been loaded into the inspection device 110. The loading of the substrate 100 can be determined by notification from other devices, such as a higher-level device 300 or a control device 310.

[0066] In step S2, the suction assist unit 13 corrects the deflection of the substrate 100. The pressing unit 131 presses the four corners of the substrate 100 from above to correct the substrate 100 to a more horizontal position.

[0067] In step S3, a voltage is applied to the electrode 115 of the adsorption unit 11. An electrostatic force is generated on the adsorption surface 112a.

[0068] In S4, the moving unit 12 lowers the suction unit 11 to the measurement position. As a result, the substrate 100 is attracted to the suction unit 11. The positioning unit 14 also positions the suction unit 11. The suction unit 11 is lowered by the moving unit 12 to the measurement position for film thickness measurement, and this movement by the moving unit 12 presses the suction unit 11 against the substrate 100 supported by the substrate support unit 15. The abutment portion 141 fits into the receiving portion 142, defining the position of the suction unit 11. At this time, the joint 1213 equipped with a spherical bearing allows the suction unit 11 to be slightly displaced and positioned by the positioning unit 14.

[0069] Then, the suction unit 11 attracts the substrate 100 by electrostatic force while the substrate 100 is pressed against the suction unit 11. In particular, at this stage, the same voltage is applied to all electrodes 115a to 115l, and a uniform suction force is generated on the suction surface 112a. As a result, the suction area on which the suction plate 112 of the suction unit 11 is provided and the substrate 100 are in contact without any gaps, and the bending of the substrate 100 due to its own weight is eliminated.

[0070] In S5, the detection result from sensor 113 is obtained to determine whether or not the substrate 100 has been successfully adsorbed. If contact with the substrate 100 is detected by sensor 113, it is determined that the substrate 100 has been successfully adsorbed, and the process in S6 is executed.

[0071] In S6, the substrate 100 is inspected. Here, the film thickness of the inspection film 103 (Figure 3) in the inspection area 102 is measured.

[0072] In S7, the voltage applied to the electrode 115 of the adsorption unit 11 is stopped (0V). The adsorption force of the adsorption surface 112a disappears, and the substrate 100 peels off from the adsorption surface 112a.

[0073] In S8, the detection result from sensor 113 is obtained to determine whether or not the detachment of substrate 100 is complete. If the sensor 113 does not detect contact with substrate 100, it is determined that the detachment of substrate 100 is complete and the process in S9 is executed. In S9, the moving unit 12 raises the suction unit 11 to the retracted position. Substrate 100 is placed on substrate support unit 15, and suction unit 11 is separated from substrate 100.

[0074] In S10, an instruction to remove the substrate 100 is sent to the higher-level device 300, etc. In response, the inspected substrate 100 is removed from the inspection device 110 by a transport robot (not shown) located downstream of the inspection device 110. This completes one inspection process.

[0075] <Methods for manufacturing electronic devices> Next, an example of a manufacturing method for electronic devices will be described. Below, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of an electronic device. In this example, the film deposition block 301 illustrated in Figure 1 is provided in, for example, three locations on the manufacturing line.

[0076] First, let me explain the organic EL display device that will be manufactured. Figure 12(A) is an overall view of the organic EL display device 50, and Figure 12(B) is a diagram showing the cross-sectional structure of one pixel.

[0077] As shown in Figure 12(A), the display area 51 of the organic EL display device 50 has multiple pixels 52, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes.

[0078] In this context, a pixel refers to the smallest unit that enables the display of a desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is composed of a combination of multiple subpixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit different amounts of light from each other. A pixel 52 is often composed of a combination of three types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. A pixel 52 may contain at least one type of subpixel, preferably two or more types, and more preferably three or more types. For example, the subpixels constituting a pixel 52 may be a combination of four types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0079] Figure 12(B) is a schematic partial cross-sectional view of the line A and B in Figure 12(A). Pixel 52 has multiple subpixels on the substrate 100, each composed of an organic EL element comprising a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, or a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are organic layers. The red layer 56R, green layer 56G, and blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0080] Furthermore, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across multiple light-emitting elements 52R, 52G, and 52B, or they may be formed for each light-emitting element. That is, as shown in Figure 12(B), the hole transport layer 55 may be formed as a common layer across multiple sub-pixel regions, on which the red layer 56R, green layer 56G, and blue layer 56B may be formed separately for each sub-pixel region, and on top of that, the electron transport layer 57 and the second electrode 58 may be formed as a common layer across multiple sub-pixel regions.

[0081] Furthermore, an insulating layer 59 is provided between the first electrodes 54 to prevent short circuits between the adjacent first electrodes 54. In addition, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0082] In Figure 12(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers having hole blocking layers and electron blocking layers. In addition, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0083] Each of the red layer 56R, green layer 56G, and blue layer 56B may be formed as a single light-emitting layer or by stacking multiple layers. For example, the red layer 56R may consist of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. By providing layers below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0084] Although the example shown here is for the red layer 56R, a similar structure may be used for the green layer 56G or the blue layer 56B. Furthermore, the number of layers may be two or more. Additionally, layers of different materials, such as the light-emitting layer and the electron-blocking layer, may be stacked, or layers of the same material may be stacked, for example, by stacking two or more light-emitting layers.

[0085] Next, we will specifically describe an example of a method for manufacturing an organic EL display device. Here, we assume that the red layer 56R consists of two layers, a lower layer 56R1 and an upper layer 56R2, and that the green layer 56G and the blue layer 56B consist of a single light-emitting layer.

[0086] First, a substrate 100 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 100 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate 100 is used in which a polyimide film is laminated on a glass substrate.

[0087] A resin layer such as acrylic or polyimide is coated onto the substrate 100 on which the first electrode 54 is formed by bar coating or spin coating. The resin layer is then patterned by lithography so that an opening is formed in the area where the first electrode 54 is formed, thereby forming an insulating layer 59. This opening corresponds to the light-emitting region where the light-emitting element actually emits light. In this embodiment, the processing is performed on a large substrate until the insulating layer 59 is formed, and after the insulating layer 59 is formed, a division process is performed to divide the substrate 100.

[0088] A substrate 100 with an insulating layer 59 patterned on it is brought into the first deposition chamber 303, and a hole transport layer 55 is deposited as a common layer on the first electrode 54 of the display area. The hole transport layer 55 is deposited using a mask in which an opening is formed for each display area 51 that will ultimately become the panel portion of each organic EL display device.

[0089] Next, the substrate 100, on which the hole transport layer 55 has been formed, is brought into the second deposition chamber 303. The substrate 100 is aligned with the mask, the substrate is placed on the mask, and the red layer 56R is deposited on the portion of the substrate 100 where the red-emitting elements are placed (the region where the red subpixels are formed) above the hole transport layer 55. Here, the mask used in the second deposition chamber is a high-definition mask in which openings are formed only in the multiple regions on the substrate 100 that will become the subpixels of the organic EL display device, specifically in the regions that will become the red subpixels. As a result, the red layer 56R, including the red light-emitting layer, is deposited only in the regions that will become the red subpixels among the multiple regions that will become the subpixels on the substrate 100. In other words, the red layer 56R is not deposited in the regions that will become the blue subpixels or the green subpixels among the multiple regions that will become the subpixels on the substrate 100, but is selectively deposited in the regions that will become the red subpixels.

[0090] Similar to the deposition of the red layer 56R, the green layer 56G is deposited in the third deposition chamber 303, and then the blue layer 56B is deposited in the fourth deposition chamber 303. After the deposition of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth deposition chamber 303. The electron transport layer 57 is formed as a common layer for the three color layers 56R, 56G, and 56B.

[0091] The substrate with the electron transport layer 57 formed on it is moved to the sixth deposition chamber 303, where the second electrode 58 is deposited. In this embodiment, each layer is deposited by vacuum deposition in the first to sixth deposition chambers 303. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth deposition chamber 303 may be deposited by sputtering. After that, the substrate with the second electrode 58 formed on it is moved to a sealing device, where a protective layer 60 is deposited by plasma CVD (sealing step), and the organic EL display device 50 is completed. Here, the protective layer 60 is formed by the CVD method, but it is not limited to this, and may be formed by the ALD method or the inkjet method.

[0092] In the first to sixth deposition chambers 303, film deposition is carried out using a mask with openings corresponding to the pattern of each layer to be formed. During film deposition, the relative position of the substrate 100 and the mask is adjusted (aligned), and then the substrate 100 is placed on the mask to perform the deposition. The alignment process carried out in each deposition chamber is performed in accordance with the alignment process described above.

[0093] <Variation> In this embodiment, the inspection area 102 is shown as being provided separately from the film 101 for product manufacturing, but the film thickness measurement inspection may be performed using the film 101. In this case, the reflection reduction treatment shown in Figures 9(A) to 10(C) should be performed in a predetermined range including the irradiation direction of the light from the measuring head 161 irradiated to the position where the film thickness measurement inspection of the film 101 is performed.

[0094] Furthermore, multiple inspection areas 102 may be placed on a single substrate 100. For example, they may be placed near both ends of the substrate 100 in the X direction, or an inspection area 102 may be placed in the center of the substrate 100.

[0095] The invention is not limited to the embodiments described above, and various modifications and changes are possible within the scope of the gist of the invention. [Explanation of Symbols]

[0096] 1: Film deposition apparatus, 11: Adsorption unit, 12: Transfer unit, 103: Inspection film, 110: Inspection apparatus, 112: Adsorption plate, 161: Measuring head

Claims

1. An inspection device, A measuring means for optically measuring the film thickness by irradiating a film deposited on a substrate with light, A substrate holding means for holding the substrate during measurement by the measuring means, Equipped with, An inspection apparatus characterized in that a predetermined range of the surface of the substrate holding means facing the substrate, located in the direction of the light irradiation, is subjected to a reflection reduction treatment such that the reflection of light irradiated from the measuring means toward the measuring means is reduced compared to a surface of the substrate holding means facing the substrate that is different from the predetermined range.

2. The inspection apparatus according to claim 1, characterized in that the substrate holding means comprises an electrostatic chuck that attracts the substrate by electrostatic force.

3. The inspection apparatus according to claim 1, characterized in that the predetermined range is subjected to a blackening process.

4. The inspection apparatus according to claim 3, characterized in that the blackening process is performed by forming a fine uneven structure in the predetermined range.

5. The inspection apparatus according to claim 1, characterized in that the predetermined range is subjected to an anti-reflection coating treatment in which a multilayer film is arranged.

6. The inspection apparatus according to claim 1, characterized in that the predetermined range is subjected to sandblasting.

7. The inspection apparatus according to claim 1, characterized in that the predetermined range is subjected to oblique grinding at a different angle from the surface of the substrate holding means facing the substrate, which is different from the predetermined range.

8. The inspection apparatus according to any one of claims 1 to 7, characterized in that the predetermined range is arranged in a recess provided on the surface of the substrate holding means facing the substrate.

9. The inspection apparatus according to any one of claims 1 to 7, characterized in that the predetermined range is arranged in a member provided in the opening of the substrate holding means.

10. The inspection apparatus according to claim 1, characterized in that within the predetermined range, there is no layer with a higher reflectivity than the film to be measured whose film thickness is measured by the measuring means.

11. The substrate holding means holds the substrate downwards, The inspection apparatus according to claim 1, characterized in that the measuring means irradiates the substrate with light from below.

12. A film deposition chamber for depositing a film onto a substrate, The inspection apparatus according to claim 1, A film deposition apparatus characterized by comprising the following features.

13. In the aforementioned film deposition chamber, the substrate is held on the lower side. The film deposition apparatus according to claim 12, characterized in that the film deposition unit deposits onto the substrate from below.

14. The aforementioned film deposition apparatus is a cluster-type deposition apparatus. The film deposition apparatus according to claim 12, characterized in that the inspection device is provided in a transfer room to which substrates discharged from the film deposition chamber are transported.

15. An inspection method performed by an inspection device, A holding step in which the substrate is held by the substrate holding means of the inspection apparatus, The measurement step includes a step in which a measuring means optically measures the film thickness by irradiating light onto a film formed in a predetermined area of ​​the substrate held by the holding step, An inspection method characterized in that a predetermined range of the surface of the substrate holding means facing the substrate, located in the direction of the light irradiation, is subjected to a reflection reduction treatment such that the reflection of light irradiated from the measuring means toward the measuring means is reduced compared to a surface of the substrate holding means facing the substrate that is different from the predetermined range.

16. The film deposition process involves forming a film on the substrate, The inspection step includes inspecting the film formed in the film formation step using the inspection method described in claim 15, A method for manufacturing an electronic device characterized by the following:

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