Thin film deposition apparatus, thin film deposition method, and manufacturing method

Abstract

It provides new technologies that are advantageous in supporting masks. [Solution] A film deposition apparatus for depositing a pattern on the film deposition surface of a substrate, comprising: a mask including a membrane portion including a pattern region in which an opening defining the pattern is formed; a frame member on which the membrane portion is disposed; and a support member that supports the mask from the side of the frame member via at least a part of the frame member, wherein the support member has a cross-sectional structure in which the area of ​​a first surface parallel to the pattern region, at a first distance from the mask, is smaller than the area of ​​a second surface parallel to the pattern region, at a second distance from the mask that is longer than the first distance.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method.

Background Art

[0002] Organic EL display devices (organic EL displays) have been applied to VR HMD (Virtual Reality Head Mount Display) and the like in addition to smartphones, TVs, and automotive displays. In the process of manufacturing an organic EL display element, a film forming apparatus is generally used when forming an organic light emitting element (organic EL element: OLED) on a substrate. The film forming apparatus adheres the deposited substance (film forming material) released from the evaporation source to the substrate through a mask on which a pattern corresponding to the pixel pattern is formed, thereby forming (film forming) a film such as an organic film or a metal film.

[0003] In a film forming apparatus, an alignment process for aligning the mask and the substrate and a film forming process for forming a film on the substrate are performed inside a chamber maintained in a vacuum. Therefore, in a film forming apparatus, it is necessary to support the mask and the substrate inside the chamber, that is, in a vacuum atmosphere, and technologies related thereto have been proposed conventionally (Patent Document 1). Patent Document 1 proposes a film forming apparatus including a mask main body portion having a mask member disposed on a base member and including a mask opening portion having a predetermined pattern, and a support means for supporting at least a part of the base member from the side of the base member.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in recent years, due to the increasing size of displays and the need to improve productivity, substrates have become larger, and consequently, masks have also tended to become larger. Therefore, conventional technology may not adequately support the masks. In particular, particles generated when supporting the masks can affect the vacuum atmosphere and contaminate the inside of the chamber, so there is room for improvement from the perspective of suppressing particle generation.

[0006] This invention has been made in view of the problems of the prior art and aims to provide a novel technology that is advantageous for supporting a mask. [Means for solving the problem]

[0007] To achieve the above objective, a film deposition apparatus as one aspect of the present invention is a film deposition apparatus for depositing a pattern on the film deposition surface of a substrate, comprising: a mask including a membrane portion including a pattern region in which an opening defining the pattern is formed; a frame member on which the membrane portion is disposed; and a support member that supports the mask from the side of the frame member via at least a part of the frame member, wherein the support member has a cross-sectional structure in which the area of ​​a first surface parallel to the pattern region, at a first distance from the mask, is smaller than the area of ​​a second surface parallel to the pattern region, at a second distance from the mask that is longer than the first distance.

[0008] Further objects or other aspects of the present invention will be revealed by embodiments described below with reference to the accompanying drawings. [Effects of the Invention]

[0009] According to the present invention, for example, it is possible to provide a novel technology that is advantageous for supporting a mask. [Brief explanation of the drawing]

[0010] [Figure 1] This figure schematically shows the configuration of a manufacturing line to which a film deposition apparatus, as one aspect of the present invention, can be applied. [Figure 2] This figure schematically shows the configuration of a film deposition apparatus as one aspect of the present invention. [Figure 3] This figure shows an example of the configuration of the substrate and mask. [Figure 4] This is a plan view showing an example of the configuration of a mask support member. [Figure 5] This is a diagram illustrating the film deposition process in a film deposition apparatus. [Figure 6] This is a diagram illustrating the film deposition process in a film deposition apparatus. [Figure 7] This is a schematic cross-sectional view showing an example of the configuration of the mask support member in this embodiment. [Figure 8] Figure 7 is a cross-sectional view showing an enlarged view of the mask support member. [Figure 9] This is a cross-sectional view showing an enlarged example of the configuration of a mask support member. [Figure 10] This is a diagram illustrating an organic EL display device as an electronic device. [Modes for carrying out the invention]

[0011] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims, and not all combinations of features described in the embodiments are essential to the invention. Two or more features from the multiple features described in the embodiments may be combined arbitrarily. Furthermore, identical or similar configurations will be given the same reference numeral, and redundant descriptions will be omitted.

[0012] Figure 1 is a schematic diagram showing the configuration (layout) of a manufacturing line 100 to which a film deposition apparatus, as one aspect of the present invention, can be applied. The manufacturing line 100 is configured as a manufacturing line that includes a system for performing a film deposition process on substrates that are brought in and for unloading the substrates after the film deposition process has been performed. The manufacturing line 100 is suitable as a line for manufacturing electronic devices, in particular organic photoelectric conversion elements such as organic light-emitting elements such as OLEDs and organic thin-film solar cells. In each figure, arrow Z indicates the vertical direction (direction of gravity), and arrows X and Y indicate mutually orthogonal horizontal directions.

[0013] As shown in Figure 1, the manufacturing line 100 has a transport chamber 120 that has an octagonal shape in plan view. Substrates 101 to be subjected to film deposition are transported into the transport chamber 120 via a transport path 110 (input path). After film deposition, the substrates 101 are transported out of the transport chamber 120 to a transport path 111 (output path).

[0014] Multiple film deposition apparatuses 1, which perform film deposition on substrates 101, are arranged around the transport chamber 120. Adjacent to each film deposition apparatus 1 is a transport chamber 130, which has an octagonal shape in plan view. A storage chamber 140 for storing masks 102 is arranged around the transport chamber 130.

[0015] The transport chamber 120 is equipped with a transport unit 121 for transporting the substrate 101. In this embodiment, the transport unit 121 includes a horizontal articulated robot and transports the substrate 101 while holding it in a horizontal position. The transport unit 121 performs an loading operation to transport the substrate 101 to the film deposition apparatus 1 from the transport path 110, and an unloading operation to transport the substrate 101, after the film deposition process has been completed, from the film deposition apparatus 1 to the transport path 111.

[0016] In each of the transfer rooms 130, a transfer unit 131 for transferring the mask 102 is provided. In this embodiment, the transfer unit 131 includes a horizontally articulated robot and holds and transfers the mask 102 in a horizontal posture. The transfer unit 131 performs an operation of transferring the mask 102 from the storage chamber 140 to the film forming apparatus 1 and an operation of transferring the mask 102 from the film forming apparatus 1 to the storage chamber 140.

[0017] FIG. 2 is a diagram schematically showing the configuration of the film forming apparatus 1 as one aspect of the present invention. The film forming apparatus 1 is embodied, for example, as an evaporation apparatus used in the manufacture of an organic EL display device. The film forming apparatus 1 performs a film forming process of depositing (evaporating) a deposition material on the substrate 101 to form a film. In this embodiment, the film forming apparatus 1 forms a thin film of a deposition material having a predetermined pattern on the film forming surface 101A of the substrate 101 through the mask 102. Hereinafter, an example in which the film forming apparatus 1 performs a film forming process on the substrate 101 by vacuum evaporation will be described, but the present invention is not limited thereto, and various film forming processes (film forming methods) such as sputtering and CVD can be applied.

[0018] As the material of the substrate 101, glass, resin, metal, etc. can be appropriately selected. In particular, in this embodiment, the substrate 101 includes a glass substrate on which a TFT (Thin Film Transistor) is formed and a silicon wafer on which a semiconductor element is formed. The mask 102 is made of a magnetic material such as metal. As the deposition material, organic materials, inorganic materials (metals, metal oxides, etc.) are used.

[0019] The film forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown) in order to maintain its internal space in a vacuum atmosphere. Note that "vacuum" means a state filled with a gas having a pressure lower than the atmospheric pressure, that is, a reduced pressure state.

[0020] The film deposition apparatus 1 has a deposition unit 10 arranged in the internal space of a vacuum chamber 2. The deposition unit 10 includes a deposition source 10A, a shutter 10B, and an anti-adhesion plate 10C. The deposition source 10A releases a deposition material upward to be deposited on the film deposition surface 101A of the substrate 101. The shutter 10B is provided above the deposition source 10A and is a mechanism for restricting and releasing the release of deposition material from the deposition source 10A. The shutter 10B is opened and closed by an opening / closing mechanism (not shown). Figure 2 shows the state in which the shutter 10B is open and the restriction on the release of deposition material from the deposition source 10A is released. The anti-adhesion plate 10C is provided above the deposition source 10A and the shutter 10B and suppresses (prevents) the deposition material from unnecessarily adhering to units (components) provided in the upper part of the internal space of the vacuum chamber 2.

[0021] The film deposition apparatus 1 is provided in the internal space of the vacuum chamber 2 and has a substrate holding section 3 that holds the substrate 101 in a horizontal position. In this embodiment, the substrate holding section 3 is configured as an adsorption plate, a so-called electrostatic chuck, that attracts the substrate 101 by electrostatic force. Specifically, the substrate holding section 3 attracts the back surface 101B, which is the surface of the substrate 101 opposite to the film deposition surface 101A, thereby holding the substrate 101 with the film deposition surface 101A facing downward (-Z direction), and more specifically, facing the mask 102. The substrate holding section 3 may also be provided with a cooling plate (not shown) including, for example, a cooling mechanism. The cooling plate cools the substrate 101 via the substrate holding section 3 during the film deposition process.

[0022] The substrate holder 3 is supported (suspended) by the magnetic plate 5 via a support part (not shown). The magnetic plate 5 is a plate that attracts the mask 102 by applying magnetic force to it. In the film deposition process, the substrate 101 is sandwiched between the magnetic plate 5 and the mask 102 attracted by the magnetic plate 5. The magnetic plate 5 is provided to bring the substrate 101 and the mask 102 closer together, or to make the substrate 101 and the mask 102 tightly attached (to improve adhesion).

[0023] The mask 102 includes a membrane portion 1022 that includes a pattern region in which openings defining a pattern to be deposited on the substrate 101 are formed, and a frame member 1024 on which the membrane portion 1022 is disposed and which is thicker than the membrane portion 1022. For example, the frame member 1024 has a thickness of 500 μm or more, and the membrane portion 1022 has a thickness of 5 μm or less. The membrane portion 1022 and the frame member 1024 are provided on the mask 102 in correspondence with the substrate 101, and more specifically, with the arrangement of chip regions provided on the substrate 101.

[0024] Figure 3 shows an example of the configuration of the substrate 101 and the mask 102. The substrate 101 has a circular shape. Multiple chip regions CPR are provided on the film deposition surface 101A of the substrate 101. The mask 102 has a circular shape, similar to the substrate 101. The mask 102 includes multiple pattern regions PTR in the membrane portion 1022, each corresponding to one of the multiple chip regions CPR on the substrate 101. A frame member 1024 is also disposed between the multiple pattern regions PTR. Thus, the frame member 1024 has a shape that surrounds the pattern regions PTR corresponding to the chip regions CPR cut from the substrate 101, and typically has a grid shape, but does not exclude the possibility of other shapes such as a stripe shape. Multiple openings OP (through holes) are formed in each pattern region PTR through which the vapor-deposited material to be attached to the substrate 101 (film deposition surface 101A) passes, and the arrangement of the openings OP defines the pattern to be deposited on the substrate 101.

[0025] The film deposition apparatus 1 has a biasing unit 6 which includes a pressing member 105, a plurality of support members 6a, claw portions F1 formed at the lower ends of the plurality of support members 6a on which the pressing member 105 is placed, and an actuator (not shown) for raising and lowering the plurality of support members 6a. The biasing unit 6 applies a biasing force to the pressing member 105 via the claw portions F1 by raising the plurality of support members 6a. The biasing unit 6 can also perform, for example, the transfer operation of the substrate 101 between the transport unit 121 and the substrate holding unit 3.

[0026] The multiple support members 6a include a pair of support members spaced apart in the X direction (or a pair of support members spaced apart in the Y direction). Each of the multiple support members 6a is raised and lowered in the Z direction by a corresponding actuator (e.g., an electric cylinder or an electric ball screw mechanism).

[0027] The pressing member 105 is placed on the claw portion F1 and extends in a direction along the outer edge of the mask 102 (in this embodiment, the Y direction), and is a member that presses the mask 102, and more specifically, the frame member 1024. During the film formation process, the pressing member 105 deforms the frame member 1024 by pressing it in the Z direction. The force that causes deformation of the frame member 1024 acts as a tensile force in the X direction on the membrane portion 1022 (pattern region), thereby reducing the deflection of the membrane portion 1022 and improving the adhesion between the substrate 101 and the mask 102.

[0028] The film deposition apparatus 1 is provided in the internal space of the vacuum chamber 2 and has a mask support member 20 that supports the mask 102 in a horizontal position. The mask support member 20 supports the mask 102 from the side of the frame member 1024, via at least a portion of the frame member 1024. As shown in Figure 4, the mask support member 20 is provided so as to partition the pattern region PTR along the pattern region PTR of the membrane portion 1022. Specifically, the mask support member 20 has a plurality of openings 202 corresponding to each of the plurality of pattern region PTR of the membrane portion 1022, and each opening 202 exposes each pattern region PTR to the deposition source 10A. Figure 4 is a plan view showing an example of the configuration of the mask support member 20. The mask support member 20 is made of a magnetic material such as metal. By making the mask support member 20 out of a magnetic material, the magnetic force of the magnet plate 5 acts on the mask support member 20, and the mask support member 20 supporting the mask 102 can be attracted. Therefore, the substrate 101 and the mask 102 are sandwiched between the magnetic plate 5 and the mask support member 20 which is attracted by the magnetic plate 5, thus enabling close contact (improved adhesion) between the substrate 101 and the mask 102. The mask support member 20 also includes an electric cylinder and an electric ball screw mechanism, and is connected to an actuator (not shown) that raises and lowers the mask support member 20. The specific configuration of the mask support member 20 will be described in detail later.

[0029] The film deposition apparatus 1 has an alignment unit 8 used for aligning the substrate 101 and the mask 102. The alignment unit 8 includes a drive mechanism 80 and a plurality of measuring units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, and a position adjustment unit 84.

[0030] The distance adjustment unit 81 includes, for example, an electric cylinder or an electric ball screw mechanism, and is a mechanism that raises and lowers the support shaft 82 in the Z direction. A magnetic plate 5 is supported (fixed) to the lower end of the support shaft 82. Therefore, as the distance adjustment unit 81 raises and lowers the support shaft 82, the substrate holding unit 3 is raised and lowered via the magnetic plate 5. By raising and lowering the substrate holding unit 3, the distance between the substrate 101 and the mask 102 is adjusted, bringing the substrate 101 and the mask 102, which are held by the substrate holding unit 3, closer together or further apart (isolated). In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 closer together or further apart in the direction in which they overlap (Z direction). The "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance. Therefore, the distance adjustment unit 81 functions as a unit that adjusts the vertical position of the substrate 101 held by the substrate holding unit 3. The distance adjustment unit 81 is mounted on the position adjustment unit 84 via a frame (not shown).

[0031] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 in the XY plane by displacing (moving) the substrate holding unit 3 in the horizontal direction. In this way, the position adjustment unit 84 functions as a unit that adjusts the relative horizontal position of the substrate 101 and the mask 102. In this embodiment, the position adjustment unit 84 displaces the substrate holding unit 3 in the rotational direction (θ direction) around the X, Y, and Z axes. In this embodiment, the relative position of the substrate 101 and the mask 102 is adjusted by fixing the position of the mask 102 and displacing the substrate 101, but this is not the only way. For example, the relative position of the substrate 101 and the mask 102 may be adjusted by fixing the position of the substrate 101 and displacing the mask 102, or by displacing both the substrate 101 and the mask 102.

[0032] The measurement unit SR is implemented as an imaging device that captures images of the object to be measured and acquires images, and functions, for example, as a measuring instrument for measuring the position of the object to be measured. The measurement unit SR is provided, for example, on the upper wall of the vacuum chamber 2. In this embodiment, the measurement unit SR detects marks (alignment marks) provided on the substrate 101 and mask 102, which are arranged in the internal space of the vacuum chamber 2, and measures the relative position (positional misalignment) between the substrate 101 and the mask 102 from the positions of these marks. In the alignment of the substrate 101 and the mask 102, the relative positions of the substrate 101 and the mask 102 are adjusted so that the positional misalignment between the substrate 101 and the mask 102 measured by the measurement unit SR falls within an acceptable range.

[0033] The film deposition apparatus 1 has a control unit 9, which is composed of a computer (information processing device). The control unit 9 comprehensively controls each part (each component) of the film deposition apparatus 1 and controls the entire film deposition apparatus 1. The control unit 9 includes a processing unit 90, a storage unit 91, an input / output (I / O) interface 92, and a communication unit 93. The processing unit 90 includes a processor, such as a CPU, and realizes various operations and processes of the film deposition apparatus 1 by executing programs stored in the storage unit 91. The storage unit 91 includes a storage device such as ROM, RAM, or HDD, and stores programs executed by the processing unit 90 and various control information. The I / O interface 92 is an interface for communication (sending and receiving various information and signals) between the processing unit 90 and external devices. The communication unit 93 is a communication device that communicates with higher-level devices and other control devices via a communication line.

[0034] The following describes an example of the control of the film deposition apparatus 1 performed by the control unit 9 (processing unit 90), from loading the substrate 101, through the film deposition process, to unloading the substrate 101.

[0035] First, the substrate 101 is brought into the vacuum chamber 2 (internal space). The substrate 101 is then transported by the transport unit 121 to below the substrate holding unit 3. The substrate 101 that has been transported below the substrate holding unit 3 is then transferred to the substrate holding unit 3. For example, by raising the transport unit 121, the substrate 101 is brought into contact with the substrate holding unit 3 (its suction surface). In this state, the electrostatic chuck function of the substrate holding unit 3 is activated to attract the back surface 101B of the substrate 101, and the substrate holding unit 3 holds the substrate 101.

[0036] Next, the mask 102 is brought into the vacuum chamber 2 (internal space). The mask 102 is transported from the storage chamber 140 to the vacuum chamber 2 by the transport unit 131, and is transported above the mask support member 20 (and the pressing member 105 placed on the claw portion F1 of the support member 6a) and below the substrate 101 held by the substrate holding part 3. Then, the mask 102, which has been transported above the mask support member 20 and below the substrate 101, is transferred to the mask support member 20. For example, the mask support member 20 is raised and the mask 102 is brought into contact with the mask support member 20, thereby holding the mask 102 with the mask support member 20. Furthermore, the mask support member 20 holding the mask 102 is raised further to position the mask 102 in an alignment position for aligning the mask 102 with the substrate 101.

[0037] Next, alignment is performed between the substrate 101 held by the substrate holding unit 3 and the mask 102 held by the mask support member 20. The alignment of the substrate 101 and the mask 102 is performed with the substrate 101 and the mask 102 superimposed. However, the state in which the substrate 101 and the mask 102 are superimposed means that the substrate 101 and the mask 102 are superimposed from a viewpoint in the Z direction, and includes both states in which the substrate 101 and the mask 102 are in physical contact and states in which they are not in contact. Therefore, in the alignment of the substrate 101 and the mask 102, a gap may be provided between the substrate 101 and the mask 102. With the substrate 101 and the mask 102 superimposed, the measurement unit SR detects marks provided on the substrate 101 and the mask 102, and the relative position (positional misalignment) of the substrate 101 and the mask 102 is measured from the positions of those marks. If the misalignment between the substrate 101 and the mask 102 is within the acceptable range, the alignment between the substrate 101 and the mask 102 is completed. On the other hand, if the misalignment between the substrate 101 and the mask 102 is not within the acceptable range, the position adjustment unit 84 displaces the substrate holding unit 3 in the XY plane to reduce the misalignment to within the acceptable range, thereby adjusting the relative position of the substrate 101 with respect to the mask 102.

[0038] Next, a film deposition process is performed to deposit a pattern on the film deposition surface 101A of the substrate 101 via the mask 102. Once the substrate 101 and the mask 102 are aligned, the substrate 101 and the mask 102 are placed on top of each other. For example, by lowering the substrate holder 3, the entire film deposition surface 101A of the substrate 101 is brought into contact with the mask 102, and the magnetic plate 5, substrate holder 3, substrate 101 and mask 102 are brought into close contact from top to bottom. Then, the shutter 10B is opened and the deposition material is released from the deposition source 10A, causing the deposition material to adhere to the film deposition surface 101A of the substrate 101 via the mask 102, forming a film of the deposition material with a predetermined pattern.

[0039] Next, the mask 102 is removed from the vacuum chamber 2 (internal space). First, the substrate holding section 3 is raised to separate the substrate 101 and the mask 102. Then, the transport unit 131 is positioned below the mask 102, and the mask support member 20 is lowered to transfer the mask 102 from the mask support member 20 to the transport unit 131. Finally, the transport unit 131 transports the mask 102 to the storage chamber 140.

[0040] Next, the substrate 101 that has undergone the film deposition process is removed from the vacuum chamber 2 (internal space). The transport unit 121 is positioned below the substrate 101, and the substrate holding unit 3 is lowered to transfer the substrate 101 from the substrate holding unit 3 to the transport unit 121. The transport unit 121 then transports the substrate 101 to the transport path 111.

[0041] Here, we focus on the film deposition process in which a pattern is deposited on the film deposition surface 101A of the substrate 101 via the mask 102. In the film deposition process, the deposition material DPM released from the deposition source 10A passes through the opening OP formed in the pattern region PTR of the membrane portion 1022 of the mask 102, as shown in Figure 5, and reaches the film deposition surface 101A of the substrate 101. The deposition material DPM that reaches the film deposition surface 101A of the substrate 101 adheres to the film deposition surface 101A and forms a pattern of deposition material DPM. However, not all of the deposition material DPM released from the deposition source 10A reaches the film deposition surface 101A of the substrate 101; a portion of it is blocked by the frame member 1024 of the mask 102. The deposition material DPM blocked by the frame member 1024 of the mask 102 adheres to the frame member 1024, except for the support region SPR (contact area) where the mask support member 20 supports the frame member 1024, as shown in Figure 6. The vapor deposition material (DPM) adhering to the frame member 1024 becomes a particle source that generates particles that contaminate the internal space of the vacuum chamber 2 when it comes into contact with and rubs against the mask support member 20 due to vibration or other reasons (physical interference). Therefore, it is necessary to reduce the amount of vapor deposition material (adhesion amount) adhering to the frame member 1024 to suppress particle generation. Figures 5 and 6 are diagrams illustrating the film deposition process in the film deposition apparatus 1. In relation to the explanation of the film deposition process, Figure 5 shows the magnet plate 5, substrate holding part 3, substrate 101, mask 102 and vapor deposition source 10A, and Figure 6 shows the frame member 1024 of the mask 102 and the mask support member 20.

[0042] In the prior art, the mask support member 20 is generally cylindrical or cylindrical in shape, as shown in Figure 6, having a cross-sectional structure in which the area of ​​the surface parallel to the pattern region PTR of the membrane portion 1022 of the mask 102 is uniform in the vertical direction. In this case, the vapor-deposited material DPM wraps around the mask support member 20 and adheres to it, resulting in a relatively large amount of vapor-deposited material DPM adhering to the frame member 1024, and increasing the possibility of physical interference with the mask support member 20.

[0043] Therefore, in this embodiment, when supporting the mask 102, the generation of particles caused by the vapor-deposited material DPM is suppressed, and a new technology advantageous for supporting the mask 102 is provided. Specifically, by devising the configuration of the mask support member 20 that supports the mask 102, in particular its shape, the amount of vapor-deposited material DPM adhering to the frame member 1024 is reduced, and the possibility of physical interference with the mask support member 20 is also reduced.

[0044] The specific configuration of the mask support member 20 in this embodiment will be described below. Figure 7 is a schematic cross-sectional view showing an example of the configuration of the mask support member 20 that supports the mask 102, more specifically, the frame member 1024 of the mask 102. Figure 8 is an enlarged cross-sectional view of the mask support member 20 shown in Figure 7. Note that in Figures 7 and 8, only a part of the mask support member 20, specifically the part that protrudes toward the mask 102 in order to support the mask 102 (frame member 1024), is shown. Referring to Figures 7 and 8, the mask support member 20 has a cross-sectional structure in which the area of ​​the surface parallel to the pattern region PTR of the membrane portion 1022 of the mask 102 (hereinafter referred to as the mask surface) is not uniform in the vertical direction. For example, as shown in Figure 8, in the mask support member 20, the area of ​​the first surface SF1 parallel to the mask surface, at a distance DT1 from the mask 102 (frame member 1024), is defined as SA1. Furthermore, in the mask support member 20, the area of ​​the second surface SF2 parallel to the mask surface, where the distance from the mask 102 is the second distance DT2, is defined as SA2, and the second distance DT2 is longer than the first distance DT1 (DT2 > DT1). In this embodiment, the mask support member 20 has a cross-sectional structure in which the area SA1 of the first surface SF1 is smaller than the area SA2 of the second surface SF2. The first surface SF1 and the second surface SF2 can be arbitrarily set within the range in which the relationship between the first distance DT1 and the second distance DT2 satisfies DT2 > DT1. Therefore, it can also be said that the mask support member 20 has a cross-sectional structure in which the area of ​​the surface parallel to the mask surface increases as it moves away from the mask 102. Here, the increase in the area of ​​the surface parallel to the mask surface includes the increase in such area continuously or in steps. When the area of ​​the surface parallel to the mask surface increases continuously, the mask support member 20 has a tapered shape in a cross-section along a plane perpendicular to the pattern region PTR (e.g., the XZ plane), as shown in Figures 7 and 8. Furthermore, when the area of ​​the surface parallel to the mask surface increases in stages, the mask support member 20 has a pyramidal shape in a cross-section along a plane perpendicular to the pattern region PTR (e.g., the XZ plane).

[0045] Thus, by having a cross-sectional structure in which the mask support member 20 has a large surface area on the side facing the deposition source 10A and a small surface area on the side facing the mask 102, it is possible to suppress the deposition material DPM from wrapping around the mask support member 20 and adhering to the frame member 1024. Specifically, as shown in Figure 8, in the frame member 1024, it is possible to suppress the deposition material DPM from adhering not only to the support region SPR in which the mask support member 20 supports the frame member 1024, but also to the peripheral region PHR around the support region SPR. Therefore, in this embodiment, compared to the conventional technology (Figure 6), the amount of deposition material DPM adhering to the frame member 1024 can be reduced, and the generation of particles caused by the deposition material DPM adhering to the frame member 1024 can be suppressed. Furthermore, in this embodiment, the peripheral region PHR is interposed between the deposition material DPM adhering to the frame member 1024 and the mask support member 20 as a margin region where the deposition material DPM does not adhere. Therefore, the possibility of physical interference between the vapor-deposited material DPM attached to the frame member 1024 and the mask support member 20 is low, which contributes to suppressing the generation of particles caused by the vapor-deposited material DPM.

[0046] Furthermore, it is preferable that the mask support member 20 has a cross-sectional structure in which the surface closest to the mask 102, that is, the surface in contact with at least a part of the frame member 1024 (the surface parallel to the mask surface), has the smallest area. This makes it possible to reduce the support region SPR (contact area), which is the area in contact between the mask support member 20 and the frame member 1024, thereby suppressing the generation of particles caused by sliding between the mask support member 20 and the frame member 1024. On the other hand, focusing on the surface of the mask support member 20 furthest from the mask 102 (the surface parallel to the mask surface), it is preferable that this surface has the largest area. This is from the viewpoint of suppressing the deposition material DPM from wrapping around the mask support member 20 and adhering to the frame member 1024.

[0047] Furthermore, in order to efficiently suppress the deposition material DPM from wrapping around the mask support member 20 and adhering to the frame member 1024, it is advisable to consider the incidence angle of the deposition material DPM emitted from the deposition source 10A to the mask 102. For example, as shown in Figure 8, if the mask support member 20 has a tapered shape, the angle θ1 between the bottom surface 20A and the side surface 20B of the tapered shape should be made larger than the incidence angle θ2 of the deposition material DPM emitted from the deposition source 10A. This efficiently reduces the amount of deposition material DPM that wraps around the mask support member 20 and adheres to the frame member 1024, and expands the peripheral area PHR where the deposition material DPM does not adhere. Therefore, the possibility of physical interference between the deposition material DPM attached to the frame member 1024 and the mask support member 20 is further reduced, and the generation of particles caused by the deposition material DPM can be suppressed. Increasing the angle θ1 expands the peripheral area (PHR) where the deposited material DPM is not attached, but this may affect the deposited material DPM that should reach the pattern area (PTR) of the membrane portion 1022 of the mask 102. Therefore, it is preferable to select an angle θ1 that is greater than the incident angle θ2 of the deposited material DPM and does not affect the deposited material DPM that should reach the pattern area (PTR).

[0048] The cross-sectional structure of the mask support member 20, in which the area of ​​the surface parallel to the mask surface is not uniform, is not limited to the cross-sectional structure shown in Figure 8, but may also have the cross-sectional structure shown in Figure 9. Figure 9 is an enlarged cross-sectional view showing an example of the configuration of the mask support member 20. The cross-sectional structure of the mask support member 20 shown in Figure 9 includes a first portion 210 and a second portion 220 adjacent to the first portion 210, starting from the side of the mask 102. The first portion 210 is a portion within a first distance range from the mask 102, in which the area of ​​the surface parallel to the mask surface is the same area SA11 (first area). The second portion 220 is a portion within a second distance range from the mask 102, which is longer than the first distance, and is different from the first portion 210, but in which the area of ​​the surface parallel to the mask surface is the same area SA22 (second area). Furthermore, the area SA11 of the surface parallel to the mask surface of the first portion 210 is smaller than the area SA22 of the surface parallel to the mask surface of the second portion 220. In other words, as shown in Figure 9, the mask support member 20 has a convex shape in a cross-section along a plane perpendicular to the pattern region PTR (for example, the XZ plane).

[0049] As shown in Figure 9, the mask support member 20 has a cross-sectional structure in which the surface area on the deposition source 10A side is large and the surface area on the mask 102 side is small, thereby reducing the amount of deposition material DPM adhering to the frame member 1024, as described above. Specifically, as shown in Figure 9, in the frame member 1024, the mask support member 20 can suppress the adhesion of the deposition material DPM not only to the support region SPR in which the frame member 1024 is supported, but also to the peripheral region PHR around the support region SPR. Therefore, even when the mask support member 20 has a convex shape, the amount of deposition material DPM adhering to the frame member 1024 can be reduced compared to the conventional technology (Figure 6), and the generation of particles caused by the deposition material DPM adhering to the frame member 1024 can be suppressed. Furthermore, a peripheral region PHR in which the deposition material DPM is not adhering is interposed between the deposition material DPM adhering to the frame member 1024 and the mask support member 20. Therefore, the possibility of physical interference between the vapor-deposited material DPM attached to the frame member 1024 and the mask support member 20 is low, which contributes to suppressing the generation of particles caused by the vapor-deposited material DPM.

[0050] Thus, according to this embodiment, when supporting the mask 102, it is possible to suppress the generation of particles caused by the deposited material DPM and provide a new technique that is advantageous for supporting the mask 102. Such a technique is particularly suitable for the manufacture of electronic devices that require the deposition of high-definition patterns, such as microOLEDs in which the pitch between pixels is narrow and the incident angle of the deposited material emitted from the deposition source is high.

[0051] Next, a manufacturing method for producing electronic devices using the manufacturing line 100 (film deposition apparatus 1) in this embodiment will be described. Here, an organic EL display device will be used as an example of the electronic device.

[0052] First, let's explain the organic EL display device. Figure 10(A) shows the overall configuration of the organic EL display device 50. Figure 10(B) shows the cross-sectional structure of one pixel of the organic EL display device 50.

[0053] As shown in Figure 10(A), the organic EL display device 50 has a display area 51 in which pixels 52, each containing a plurality of light-emitting elements, are arranged in a matrix. As will be described later, each of the plurality of light-emitting elements has a structure comprising an organic layer (organic film) sandwiched between a pair of electrodes. In this embodiment, a pixel means the smallest unit that enables the display of a predetermined color in the display area 51. For example, in the organic EL display device 50, the pixels 52 are composed of a combination of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, each enabling the display of different colors. Generally, the pixels 52 are composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but are not limited to this. For example, they may be composed of a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and only need to be composed of at least one color of light-emitting element.

[0054] Figure 10(B) is a partial cross-sectional view along the A-B line shown in Figure 10(A). The pixel 52 consists of an organic EL element on a substrate 53, comprising an anode 54, a hole transport layer 55, one of the light-emitting layers 56R, 56G, and 56B, an electron transport layer 57, and a cathode 58. Of these, the hole transport layer 55, the light-emitting layers 56R, 56G, and 56B, and the electron transport layer 57 correspond to organic layers. In this embodiment, the light-emitting layer 56R is an organic EL layer that emits red light, the light-emitting layer 56G is an organic EL layer that emits green light, and the light-emitting layer 56B is an organic EL layer that emits blue light. The light-emitting layers 56R, 56G, and 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. The anode 54 is formed separately for each light-emitting element. The hole transport layer 55, electron transport layer 57, and cathode 58 may be formed in common with multiple light-emitting layers 56R, 56G, and 56B, or they may be formed for each light-emitting element. In addition, an insulating layer 59 is provided between the electrodes to prevent the anode 54 and cathode 58 from short-circuiting due to foreign matter. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer PL is provided to protect the organic EL element from moisture and oxygen.

[0055] In Figure 10(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but depending on the structure of the organic EL device, they may be formed from multiple layers, including a hole blocking layer and an electron blocking layer. Furthermore, a hole injection layer having an energy band structure may be formed between the anode 54 and the hole transport layer 55 to facilitate the smooth injection of holes from the anode 54 to the hole transport layer 55. Similarly, an electron injection layer may be formed between the cathode 58 and the electron transport layer 57.

[0056] The following describes the manufacturing method for organic EL display devices.

[0057] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and an anode 54 are formed.

[0058] Next, an acrylic resin is formed on the substrate 53 on which the anode 54 is formed by spin coating, and an insulating layer 59 is formed by patterning the acrylic resin in the area where the anode 54 is formed using lithography. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0059] The substrate 53, patterned with the insulating layer 59, is brought into the film deposition apparatus 1 (first film deposition apparatus) of the manufacturing line 100, and a hole transport layer 55 is deposited as a common layer on the anode 54 of the display area 51. The hole transport layer 55 is deposited, for example, by vacuum deposition. Since the hole transport layer 55 is actually formed to a size larger than the display area 51, a high-resolution mask is not required.

[0060] Next, the substrate 53, on which the hole transport layer 55 has been formed, is brought into the film deposition apparatus 1 (second film deposition apparatus) of the manufacturing line 100. The substrate 53 and the mask are aligned, and a red light-emitting layer 56R is deposited on the portion of the substrate 53 that will form the red light-emitting element, via the mask.

[0061] Similar to the deposition of the light-emitting layer 56R, a light-emitting layer 56G that emits green light is deposited in the deposition apparatus 1 (third deposition apparatus) of the manufacturing line 100, and then a light-emitting layer 56B that emits blue light is deposited in the deposition apparatus 1 (fourth deposition apparatus) of the manufacturing line 100. After the light-emitting layers 56R, 56G, and 56B have been deposited, an electron transport layer 57 is deposited over the entire display area 51 in the deposition apparatus 1 (fifth deposition apparatus) of the manufacturing line 100. The electron transport layer 57 is formed as a layer common to the three light-emitting layers 56R, 56G, and 56B.

[0062] Next, the substrate 53, which has the electron transport layer 57 formed on it, is brought into the film deposition apparatus 1 (sixth film deposition apparatus) of the manufacturing line 100, and the cathode 58 is deposited.

[0063] Then, the substrate 53 with the cathode 58 formed is brought into a sealing device, and a protective layer PL is deposited by plasma CVD (sealing process) to complete the organic EL display device 50. Here, the protective layer PL is formed by the CVD method, but it is not limited to this. For example, the protective layer PL may be deposited by the ALD method or the inkjet method.

[0064] Furthermore, if the substrate 53, which has the insulating layer 59 patterned on it, is exposed to an atmosphere containing moisture or oxygen between the time it is brought into the film deposition system 1 and the time the protective layer PL is deposited, the light-emitting layer made of organic EL material may deteriorate. Therefore, it is preferable that the loading and unloading of the substrate 53 between film deposition apparatuses be carried out under a vacuum atmosphere or an inert gas atmosphere.

[0065] The invention is not limited to the embodiments described above, and various modifications and changes are possible within the scope of the gist of the invention. [Explanation of symbols]

[0066] 1: Film deposition apparatus 20: Mask support member 101: Substrate 102: Mask 1022: Membrane part 1024: Frame member PTR: Pattern area OP: Opening

Claims

1. A film deposition apparatus for depositing a pattern on the film deposition surface of a substrate, A mask comprising a membrane portion including a pattern region in which an opening defining the aforementioned pattern is formed, and a frame member on which the membrane portion is disposed, From the side of the frame member, a support member that supports the mask via at least a part of the frame member, It has, The support member has a cross-sectional structure in which the area of ​​a first surface parallel to the pattern region, at a distance of a first distance from the mask, is smaller than the area of ​​a second surface parallel to the pattern region, at a distance of a second distance from the mask that is longer than the first distance. A film deposition apparatus characterized by the following features.

2. The film deposition apparatus according to claim 1, characterized in that the cross-sectional structure has the smallest area of ​​the surface parallel to the pattern region that is in contact with at least a part of the frame member.

3. The film deposition apparatus according to claim 2, characterized in that the cross-sectional structure has the largest area of ​​the surface parallel to the pattern region that is furthest from the mask.

4. The film deposition apparatus according to claim 1, characterized in that the area of ​​the surface parallel to the pattern region increases as the cross-sectional structure moves away from the mask.

5. The cross-sectional structure includes, from the side of the mask, a first portion having the same area as the surface parallel to the pattern region, and a second portion adjacent to the first portion having the same area as the surface parallel to the pattern region. The first area is smaller than the second area. The film deposition apparatus according to feature 1.

6. The film deposition apparatus according to claim 1, characterized in that the support member has a tapered shape in a cross-section along a plane perpendicular to the pattern region.

7. The system further includes a deposition source that releases a deposition material to be deposited on the aforementioned film-forming surface. The angle between the bottom and side surfaces of the tapered shape is greater than the angle of incidence of the deposited material emitted from the deposition source to the mask. The film deposition apparatus according to feature 6.

8. The film deposition apparatus according to claim 1, characterized in that the support member has a convex shape in a cross-section along a plane perpendicular to the pattern region.

9. The film deposition apparatus according to claim 1, characterized in that the support member is provided so as to demarcate the pattern region.

10. Multiple chip regions are provided on the film deposition surface. The membrane portion includes a plurality of pattern regions corresponding to each of the plurality of chip regions, The support member is provided so as to demarcate each of the plurality of pattern regions. The film deposition apparatus according to feature 1.

11. An adsorption plate that adsorbs the surface of the substrate opposite to the film-forming surface, A magnetic plate positioned above the aforementioned suction plate, The support member is made of a magnetic material, The magnetic plate exerts a magnetic force on the support member to attract the support member. The film deposition apparatus according to feature 1.

12. A method for forming a film, characterized by forming a pattern on the film-forming surface of a substrate using a film-forming apparatus according to any one of claims 1 to 11.

13. A manufacturing method characterized by manufacturing an electronic device using a film deposition apparatus described in any one of claims 1 to 11.

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