Method for manufacturing a resistive element and a resistive element obtained thereby
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- FUJI TANSHI INDS
- Filing Date
- 2025-11-26
- Publication Date
- 2026-06-16
Smart Images
Figure 2026097757000001_ABST
Abstract
Claims
1. A first metal member made of a copper-manganese-nickel alloy for general electrical resistance and a second metal member made of aluminum are prepared. The first metal member and the second metal member are arranged so that they are in contact with each other. By inserting a rotating tool into the second metal member and moving the rotating tool along the contact portion with the first metal member, the first metal member and the second metal member are joined by friction stir welding. A method for manufacturing a resistive element in which the first metal member described above is a resistor and the second metal member is an electrode, An intermediate layer is formed on at least the surface of the first metal member that is in contact with the second metal member, the intermediate layer being made of a metal whose melting point reduction when alloyed with aluminum is 120°C or less relative to the melting point of aluminum. A method for manufacturing a resistive element, characterized by the following:
2. The metal constituting the above intermediate layer is at least one of Ni, Fe, Co, Cu, Au, Ag, and Mn. A method for manufacturing a resistive element according to claim 1.
3. The metal constituting the above intermediate layer is an alloy mainly composed of Ni. A method for manufacturing a resistive element according to claim 1.
4. A first metal member made of a copper-manganese-nickel alloy for general electrical resistance and a second metal member made of aluminum are prepared. The first metal member and the second metal member are arranged so that they are in contact with each other. By inserting a rotating tool into the second metal member and moving the rotating tool along the contact portion with the first metal member, the first metal member and the second metal member are joined by friction stir welding. A method for manufacturing a resistive element in which the first metal member described above is a resistor and the second metal member is an electrode, An intermediate layer made of a metal with a melting point higher than aluminum is formed on at least the surface of the first metal member that comes into contact with the second metal member. A method for manufacturing a resistive element, characterized by the following:
5. The metal constituting the above intermediate layer is at least one of Ni, Fe, Co, Cu, Au, and Mn. A method for manufacturing a resistive element according to claim 4.
6. The metal constituting the above intermediate layer is an alloy mainly composed of Ni. A method for manufacturing a resistive element according to claim 4.
7. In the second metal member after the friction stir welding described above, there is no eutectic structure near the intermediate layer. A method for manufacturing a resistive element according to claim 1 or 4.
8. The above copper-manganese-nickel alloy consists of Mn: 10-13% by weight, Ni: 1-4% by weight, and the remainder: Cu, where Cu + Ni + Mn constitutes 98% or more by weight. A method for manufacturing a resistive element according to claim 2 or 5.
9. The above copper-manganese-nickel alloy consists of Mn: 10-13% by weight, Ni: 1-4% by weight, and the remainder: Cu, where Cu + Ni + Mn constitutes 98% or more by weight. A method for manufacturing a resistive element according to claim 3 or 6.
10. A resistor made of a copper-manganese-nickel alloy for general electrical resistance, The resistor comprises an electrode portion made of aluminum that is joined to the resistor, An intermediate layer is present at the interface between the resistor and the electrode, made of a metal whose melting point reduction when alloyed with aluminum is 120°C or less. A resistive element characterized by the following features.
11. The metal constituting the above intermediate layer is at least one of Ni, Fe, Co, Cu, Au, Ag, and Mn. The resistive element according to claim 10.
12. The metal constituting the above intermediate layer is an alloy mainly composed of Ni. A method for manufacturing a resistive element according to claim 10.
13. A resistor made of a copper-manganese-nickel alloy for general electrical resistance, The resistor comprises an electrode portion made of aluminum that is joined to the resistor, An intermediate layer made of a metal with a higher melting point than aluminum exists at the interface between the resistor and the electrode. A resistive element characterized by the following features.
14. The metal constituting the above intermediate layer is at least one of Ni, Fe, Co, Cu, Au, and Mn. The resistive element according to claim 13.
15. The metal constituting the above intermediate layer is an alloy mainly composed of Ni. A method for manufacturing a resistive element according to claim 13.
16. In the electrode portion described above, there is no eutectic structure near the intermediate layer described above. The resistive element according to claim 10 or 13.
17. The above copper-manganese-nickel alloy consists of Mn: 10-13% by weight, Ni: 1-4% by weight, and the remainder: Cu, where Cu + Ni + Mn constitutes 98% or more by weight. The resistive element according to claim 11 or 14.
18. The above copper-manganese-nickel alloy consists of Mn: 10-13% by weight, Ni: 1-4% by weight, and the remainder: Cu, where Cu + Ni + Mn constitutes 98% or more by weight. The resistive element according to claim 12 or 15.