Semiconductor equipment

Abstract

One of the objectives is to improve the driving capability of semiconductor devices. [Solution] The semiconductor device has a first transistor and a second transistor, and the first The first terminal of the transistor is electrically connected to the first wiring, and the first transistor The second terminal is electrically connected to the second wiring, and the gate of the second transistor is connected to the third The first terminal of the second transistor is electrically connected to the wiring, and the third terminal is electrically connected to the wiring. The second terminal of the second transistor is electrically connected to the gate of the first transistor. The first and second transistors are connected by an oxide semiconductor to form the channel region. A region is formed, and the channel width of the first transistor and the second transistor is per 1 μm The off-current is 1aA or less.

Claims

[Claim 1] It has a first transistor and a second transistor, The first terminal of the first transistor is electrically connected to the first wiring, and the second terminal of the first transistor is electrically connected to the second wiring. The gate of the second transistor is electrically connected to the third wiring, the first terminal of the second transistor is electrically connected to the third wiring, and the second terminal of the second transistor is electrically connected to the gate of the first transistor. The first transistor and the second transistor have channel regions formed by an oxide semiconductor. A semiconductor device in which the off-currents of the first transistor and the second transistor are 1 aA / μm or less.

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