Embedding with a pattern formed on a narrow-strip single-mode transverse laser.
A modified narrow-stripe laser design with varying strain levels in its embedding structures addresses strain-induced performance issues, enhancing optical output and reliability by maintaining single-mode operation.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- II VI DELAWARE INC
- Filing Date
- 2025-07-30
- Publication Date
- 2026-06-18
AI Technical Summary
Conventional lateral laser designs face issues with stress or strain affecting the optical mode performance, particularly in narrow-stripe single-mode lasers, leading to suboptimal operation and reduced optical output.
Implementing a modified design with two embedding-based structures containing different strain levels along the laser device, using materials like AlGaAs/InGaAs for cladding and InGaAs for the quantum well, and employing techniques such as plasma-enhanced chemical vapor deposition (PECVD) or pulsed laser deposition (PLD) to pattern the embedded portions, ensuring strain varies longitudinally to maintain single-mode operation.
The modified design enhances the laser's optical output by minimizing strain-induced performance degradation, allowing for higher linear output and improved reliability across varying temperatures.
Smart Images
Figure 2026099722000001_ABST
Abstract
Description
Technical Field
[0001]
[0001] Aspects of the present disclosure relate to optical communication based solutions. More specifically, certain embodiments of the present disclosure relate to methods and systems for implementing and utilizing an embedding formed on a narrow stripe single mode lateral laser.
Background Art
[0002]
[0002] The limitations and drawbacks of conventional solutions regarding the design, embodiments, and usage of lateral lasers will become apparent to those skilled in the art by comparing such systems with some aspects of the present disclosure described in the remainder of this application while referring to the drawings.
Summary of the Invention
[0003]
[0003] Systems and methods for an embedding formed on a narrow stripe single mode lateral laser are provided, which are substantially shown in at least one of the figures and / or described in relation to at least one of the figures, and are more fully described in the claims.
[0004]
[0004] These advantages, aspects, and novel features of the present disclosure, as well as other advantages, aspects, and novel features, and the details of the illustrated embodiments of the present disclosure will be more fully understood from the following description and the drawings.
Brief Description of the Drawings
[0005] [Figure 1A]
[0005] A cross-sectional view of an exemplary high-power narrow stripe (NS) laser device. [Figure 1B]
[0006] A top view in the form of a ridge of an exemplary high-power narrow stripe (NS) laser device of FIG. 1A with various sections of the laser for maximum single mode output. [Figure 2A]
[0007] This diagram shows a cross-section of an exemplary high-power narrow-stripe (NS) laser device and illustrates the potential forces acting on the semiconductor material. [Figure 2B]
[0008] This figure shows the relative change in refractive index caused by stress in the ridge area of an exemplary high-power narrow-stripe (NS) laser device. [Figure 3A]
[0009] This is a schematic diagram of two exemplary embedded narrow-stripe (NS) laser devices, showing an exemplary process flow for obtaining the desired layer. [Figure 3B] This is a schematic diagram of two exemplary embedded narrow-stripe (NS) laser devices, showing an exemplary process flow for obtaining the desired layer. [Figure 3C] This is a schematic diagram of two exemplary embedded narrow-stripe (NS) laser devices, showing an exemplary process flow for obtaining the desired layer. [Figure 4]
[0010] This is a schematic diagram of two exemplary embedded narrow-stripe (NS) laser devices, showing an exemplary process flow for obtaining the desired layer. [Figure 5]
[0011] This graph shows an exemplary alternative embodiment using the pulsed laser deposition (PLD) technique. [Figure 6]
[0012] This is an optical microscope image of the transition area between two patterned implants in an exemplary narrow-stripe (NS) laser device with two implants. [Modes for carrying out the invention]
[0006]
[0013] This disclosure relates to optical devices (e.g., laser emitters) and solutions for improving the operation and / or performance of optical devices. The solutions according to this disclosure relate, in particular, to improving the maximum single-mode lateral output of laser devices, especially narrow-striped (NS) laser devices. In this regard, the techniques described may be applicable to all semiconductor lateral single-mode lasers. Such techniques may be used to enable the generation of higher optical output using a device used as a laser pump, such as an erbium-doped fiber amplifier (EDFA).
[0007]
[0014] Figure 1A shows a cross-section of an exemplary high-power narrow-stripe (NS) laser device. What is shown in Figure 1A is narrow-stripe (NS) laser device 100 (or a cross-section thereof).
[0008]
[0015] The NS laser device 100 may comprise a doped p-type cladding (p-cladding) 102, a doped n-type cladding (n-cladding) 104, an active region 106, an embedded portion 108, and a metal contact layer 110, as shown in Figure 1A.
[0009]
[0016] In this regard, in various embodiments, providing a high single transverse mode output (i.e., linear output) at 980 nm or higher may be achieved by fabricating a relatively long (e.g., more than 1 mm in length) narrow stripe laser (e.g., a waveguide less than 15 mm in width) which may be fabricated using aluminum gallium arsenide (AlGaAs) / (for the QW) indium gallium arsenide (InGaAs) material for the cladding. The cladding may also be fabricated from AlInGaP material (when grown on a GaAs substrate), or AlGaInAs, AlGaInP (when grown on an InP substrate), or AlGaN (when grown on an AlN substrate), and the QW may be fabricated from AlGaInP, GaAsN, InGaN, etc. In a single-mode design, a one-dimensional (1D) optical waveguide may be formed during epitaxial growth, comprising two claddings (p-cladding 102 and n-cladding 104) and an active region 106 between the two claddings. The active region 106 may include a quantum well (QW) made of, for example, InGaAs, which emits light at around 980 nm.
[0010]
[0017] During the exemplary formation process, after epitaxial growth, a two-dimensional (2D) optical waveguide may be formed, for example, by etching the ridge waveguide (in the central part of the NS laser device 110) as shown in Figure 1A. The etching depth of the waveguide may be defined to ensure single-mode operation. For example, the etching depth may be calculated, and / or details related to the etching depth may be analytically elucidated using suitable approximations and limiting values for some basic geometry, such as step-index optical fibers. The geometry of the ridge may also result in current confinement. The embedded portion 108 may be deposited in all locations except the top surface of the ridge, and then, as shown in Figure 1A, a metal contact layer 110 may be deposited on the top surfaces of the ridge and embedded portion 108 to ensure electrical contact.
[0011]
[0018] The embedded portion 108 can serve various purposes, including 1) insulating the laser sidewall from the metal contact layer 110 on the upper surface, and 2) reliably and more strongly confining the laser light modes and reducing mode overlap with the metal contact layer 110 on the upper surface, thereby minimizing optical loss. The embedded portion 108 may contain a material suitable for achieving these purposes. In various embodiments, the embedded portion 108 may contain, for example, an oxide, a dielectric, or a metal that provides a large strain field. Furthermore, as shown in Figure 1A, the embedded portion 108 may be asymmetric with respect to the ridge. In this regard, such asymmetry may be beneficial (for example, optimizing the reliability of wafers containing various miscuts). Nevertheless, this disclosure is not limited to embodiments in which the embedded portion 108 is asymmetric with respect to the ridge, as shown, and therefore in some embodiments, the embedded portion 108 may be symmetric.
[0012]
[0019] In some embodiments, additional layers (either conductive or insulating) may be added to and patterned on the wafer for other purposes (e.g., heat dissipation, mechanical protection, current blocking, wavelength selectivity, etc.) without significantly affecting the overall behavior of the underlying layers as described above.
[0013]
[0020] Although the laser device 100 is shown and described herein as a narrow-stripe (NS) laser device, this disclosure is not limited to such a type of laser, and solutions similar to those described herein may be used in other types of laser devices. For example, in some embodiments, similar structures similar to those described herein may be used in distributed feedback (DFB) laser-based devices or distributed Bragg reflector (DBR) laser-based devices.
[0014]
[0021] Figure 1B shows a top view of the ridge configuration of the exemplary high-power narrow-stripe (NS) laser device of Figure 1A, with various sections of the laser for maximum single-mode output. What is shown in Figure 1B is the NS laser device 100, in particular its top view, i.e., a longitudinal view as seen from above.
[0015]
[0022] The NS laser device 100, when viewed from above, may be functionally divided into three zones: 1) a filter mode (region) 150, 2) a transition region 160, and 3) an amplifier region 170. In this regard, the filter mode (region) 150 corresponds to the rear section of the NS laser device 100, where the waveguide is narrower and therefore the waveguide can support exactly one mode, i.e., it is a modal filter. The amplifier region 170 corresponds to the front section of the NS laser device 100, where the waveguide is wider and therefore the waveguide can support essentially fewer modes. The transition region 160 corresponds to an intermediate section where there is a transition between two different optical mode morphologies, i.e., between the optical mode morphology in the narrow section and the optical mode morphology in the wide section. The transition region 160 can function as a mode coupler between the narrow mode filter and the wide amplifier section. The transition region 160 may be designed to minimize optical loss.
[0016]
[0023] In various embodiments, an NS laser device, such as NS laser device 100, can provide a single-mode output of 1.5 W (e.g., kink-free output or linear output) within a specific temperature range (e.g., between 20°C and 80°C). The linear output may also depend heavily on the reflectivity of the front mirror, or, in the case of an external cavity laser, on effective feedback.
[0017]
[0024] In some examples, in the design used to implement an NS laser device (e.g., similar to that shown in FIG. 1A), a certain amount of stress may be applied to the semiconductor, which may affect the performance or operation of the NS laser device. This is shown in FIGS. 2A-2B and is described in more detail in connection with FIGS. 2A-2B.
[0018]
[0025] FIG. 2A shows a cross-section of an exemplary high-power narrow stripe (NS) laser device and shows the forces that may be applied to the semiconductor material. What is shown in FIG. 2A is the NS laser device 100 described in connection with FIGS. 1A-1B.
[0019]
[0026] In this regard, as shown in FIG. 2A, in some examples, the embedded portion 108 may apply a force to the semiconductor material (e.g., a combination of the p-clad 102, the n-clad 104, and the active region 106), particularly in the ridge area or in the vicinity thereof. This force may appear as stress (or mechanical strain) and may adversely affect the performance of the NS laser device. Such stress may, for example, affect (e.g., change) the optical mode of the NS laser device. In this regard, mechanical strain may result in a variation of the bandgap as a function of the position within the semiconductor. The change in the bandgap changes the dielectric function of the semiconductor, and this change in the bandgap may be converted into a position-dependent variation of the refractive index by the Kramers-Kronig relations. Since the embedded layer 108 is deposited directly on the semiconductor, it is relatively close to the active region (e.g., approximately several hundred nm from the QW), and thus its influence may be large enough to result in a measurable difference in the form of the optical mode. This is shown in FIG. 2B.
[0020]
[0027] FIG. 2B shows the relative change in the optical refractive index caused by stress in the ridge area of an exemplary high-power narrow stripe (NS) laser device. What is shown in FIG. 2B is a graph 220 showing the relative change in the optical refractive index caused by stress at the base of the ridge in an NS laser device such as NS laser device 100. In this regard, the data used to create graph 200 can be obtained by measuring the etching depth such that the single-mode operation of the waveguide is reliably shifted by about 50 nm each time a strain of 1 GPa is applied by the implant 108. As shown in graph 220, the stress applied by the implant in the ridge or in the vicinity thereof, particularly at the base of the ridge, can reduce performance.
[0021]
[0028] The solution according to the present disclosure can overcome the limitations and / or problems that may occur in existing designs, particularly the presence of stress or strain that may affect the operation (e.g., optical mode) of an NS laser device. In particular, in various embodiments based on the present disclosure, a modified design / structure may be used, where the implanted layer may be modified and / or additional patterning of the layer may be introduced. In this regard, one feature of such embodiments is that the strain caused and / or applied by the modified implanted layer varies according to the longitudinal position. This enables fine-tuning of the characteristics of the waveguide. For example, in some embodiments, an implanted portion with a greater compressive strain (hereinafter referred to as "strain level A" or simply "strain A") may be introduced at the front of the device compared to an implanted portion at the rear of the device (hereinafter referred to as "strain level B" or simply "strain B"). Such a design is different from a conventional design that uses a uniform implanted portion having a single strain implanted portion (e.g., similar to strain B) and a standard etching depth over the entire laser length. Exemplary embodiments based on the present disclosure, and the predicted effects of the embodiments, are illustrated and described in more detail below.
[0022]
[0029] Figures 3A–3C show schematic diagrams of two exemplary embedded narrow-stripe (NS) laser devices, along with exemplary process flows for obtaining the desired layers. Figures 3A–3C show two embedded narrow-stripe (NS) laser devices 300 realized under this disclosure, as well as various cross-sections of the devices and exemplary processes for forming the devices.
[0023]
[0030] The NS laser device 300 comprises an optical waveguide made of semiconductor material (for example, a p-cladding, an n-cladding, and an active material between the two claddings, as described with respect to the NS laser device 100 in Figure 1A), as shown in Figures 3A to 3C, the optical waveguide may be arranged in the form of a ridge 302. The NS laser device 300 further comprises a reference embedding section 304 and a strain embedding section 306, along with a transition zone 308 between the two embedding sections. The NS laser device 300 further comprises a metal contact layer (identified as “resist” in the figure) 310 covering at least a portion of the upper surface of the NS laser device 300, although not shown in Figure 3A.
[0024]
[0031] In this regard, as mentioned above, the Narrow Stripe (NS) Laser Device may be realized using a modified design / structure that addresses problems that would otherwise affect the device performance due to stresses that may occur in areas near the semiconductor layer (particularly near the ridge waveguide). For example, in various embodiments, the Narrow Stripe (NS) Laser Device according to the Disclosure may utilize two embedding-based structures, each containing two different embedding materials configured to accommodate different strains (e.g., strain A embedding and strain B embedding).
[0025]
[0032] In the rear section of the laser device, the waveguide is unaffected by any changes in strain, and therefore, as long as only one mode is confined within the waveguide, the laser device can maintain single-mode behavior. In the front section of the laser device, conversely, a waveguide that is not monomode in a standard device can support only one mode. This may be achieved by incorporating adaptively configured embeddings to address problems otherwise caused by the applied stress, such as by selecting an appropriate value for this extra compressive stress, which can weaken the waveguide characteristics until the waveguide supports only one mode. For example, the reference embedding 304 may include a strain level B-based embedding material, while the strain embedding 306 may include a strain level A-based embedding material.
[0026]
[0033] Therefore, by using such a two-burial design, the waveguide can become single-mode at each longitudinal position along the entire resonator length by designing the distortion to be suppressed as a function of the waveguide width. Doing so makes it possible to push the linear output to a higher value.
[0027]
[0034] A transition zone 308 may exist between the two intervals. In this regard, the transition between optical modes is necessary because the difference in strain, which may cause parasitic reflections in the waveguide, can cause a correction of the waveguide. Various measures may be used to realize this mode transition (and thus the transition zone 308). The transition zone 308 may include a combination of both embedding materials. In some examples, the relative amounts of the two embedding materials may change so that they gradually change from one end of the laser device to the other, as shown in and described in more detail in relation to Figure 5.
[0028]
[0035] The two embedded base designs may be implemented in various ways, and this disclosure is not limited to any particular method. Rather, it should be understood that any preferred method may be used. For example, in one exemplary embodiment that can show the simplest embodiment, the two embedded structures may be implemented by lithography patterning two embedded parts having two different strains. In the first step of such a lithographic patterning-based process, a compression-strained embedded part (e.g., strain level A) may be deposited using a plasma-enhanced chemical vapor deposition (PECVD)-based technique or an atomic layer deposition (ALD)-based technique, etc., then a resist layer is deposited and patterned, and then this embedded layer is removed from behind the device (e.g., using lithographic opening, embedded etching, and peeling). In the second step of the process, an embedded area with strain level B is deposited at a different mask level, and the pattern is re-formed using a mask that is the negative of the first mask to remove the embedded area deposited on the front of the device (for example, using lithography for opening, embed etching, and peeling). In other words, the process comprises a primary first step and a secondary step for imparting the embedded area, each of which may include one or more secondary steps. One or more secondary steps may include, for example, depositing an embedding material (either strain embedding material or reference embedding material), then imparting a resist (metal contact) layer, then lithography and opening, then embed etching and peeling.
[0029]
[0036] An alternative, but more complex, process that may be used to deposit the embedded portion is pulsed laser deposition (PLD). In this regard, PLD is a scanning technique, and therefore the deposited thickness may be modulated on a scale of the laser length. A thick layer of the embedded portion with strain A may be deposited at the front of the laser device, and a very thin layer at the back. In the second step, the exact opposite may be done, with the thick embedded portion with strain B at the back and the thin embedded portion with strain A at the front.
[0030]
[0037] Figures 3B and 3C show exemplary cross-sections of a laser device at different process steps. In particular, as shown in Figures 3B and 3C, the cross-sections can correspond to two different cross-sections of the laser device, namely, 1) a first cross-section (XS1) near the rear section of the device, and 2) a second cross-section (XS2) near the front section of the device. The various cross-sections shown in Figures 3B and 3C correspond to different points in time during the formation process. In particular, as illustrated, in the lithography-based pattern formation process described above (including exemplary secondary steps performed during these steps), Figure 3B corresponds to the first step and Figure 3C corresponds to the second step.
[0031]
[0038] Figure 4 shows schematic diagrams of two exemplary embedded narrow-stripe (NS) laser devices, along with an exemplary process flow for obtaining the desired layer. The devices shown in Figure 4 are narrow-stripe (NS) laser devices 400 and 420.
[0032]
[0039] Each of the NS laser devices 400 and 420 incorporates two embedding-based designs realized by this disclosure and may be substantially similar to the NS laser device 300 in Figures 3A-3C. The NS laser device 400 thus comprises a semiconductor / ridge 402, a reference embedding portion 404, and a strain embedding portion 406, while the NS laser device 420 comprises a semiconductor / ridge 422, a reference embedding portion 424, and a strain embedding portion 426, with each of the elements being substantially similar to the similarly named elements of the NS laser device 300.
[0033]
[0040] However, NS laser devices 400 and 420 can exhibit alternative embodiments that differ with respect to the transition between the reference embedding portion and the strain embedding portion. In this regard, NS laser device 400 may have a more gently tapered transition from the reference embedding portion to the strain embedding portion, as shown in Figure 4, which allows for a gradual reduction of strain around the waveguide, such as by patterning the embedding portion. On the other hand, NS laser device 420 may have a steeper transition, which includes a ridge waveguide step that can be fabricated to coincide with the strain transition.
[0034]
[0041] Figure 5 is a graph illustrating an exemplary alternative embodiment using pulsed laser deposition (PLD) technique. Figure 5 shows graph 500, which illustrates the layer thickness of the embedded layer in an exemplary narrow-stripe (NS) laser device having two embedded sections, as realized under this disclosure. In particular, graph 500 shows the configuration of the embedded layer with respect to the material corresponding to the two embedded sections (e.g., a strain embedded section containing strain A, and a reference embedded section containing strain B) over the entire length of the NS laser device. In this regard, as shown in graph 500, there may be a gradual transition (in terms of the proportion to the total thickness) from a state where strain B embedding is dominant on the rear surface of the NS laser device to a state where strain A embedding is dominant on the front surface of the NS laser device. The use of such a gradual transition may be realized by using pulsed laser deposition (PLD) technique. In some examples, various aspects of the layer thickness transition may be tuned to generate a specific required stress field. Graph 500 illustrates exemplary transition modes that can generate such required stress fields.
[0035]
[0042] Figure 6 shows an optical microscope image of the transition area between two patterned implants in an exemplary two-implant narrow-stripe (NS) laser device. Shown in Figure 6 is a narrow-stripe (NS) laser device 600 (or a portion thereof) incorporating two implant-based structures according to the present disclosure, showing the transition area between two implants (602 and 604) within the device.
[0036]
[0043] In this regard, Figure 6 shows a top view of an optical microscope image of such an NS laser device (and a transition region within the device). In particular, as shown in Figure 6, in the first step, careful visual inspection of the device may confirm the patterning of the embedded portions (embedded portions 602 and 604) without removing the metal layer on the top surface of the embedded portions. As shown in the optical microscope image of Figure 6, the transition region 606 between the two embedded portions 602 and 604 may not be completely embedded under the metal. Also shown are a first cross section (XS1) of the front section of the device and a second cross section (XS2) through the transition region. Typically, a change in the color of the embedded layer between different regions is expected and / or may be observed. Such a color step may be visible in most of the configurations of this disclosure, but not necessarily in all configurations. As shown in the illustrative optical microscope image in Figure 6, some surface shape remains at the interface between the two materials, so the boundary between the two embedded parts (between embedded parts 602 and 604) can be identified without even removing the metal contact layer.
[0037]
[0044] In some cases, the improvements brought about by solutions based on this disclosure can be evaluated by testing or other means. In this regard, testing may include measuring the strain caused by the thin film on the fabricated device and confirming that the stress in the NS laser device realized based on this disclosure differs between the front and rear of the laser device. There may be various techniques for measuring the stress of the thin film for this purpose, but this disclosure is not limited to any particular test technique, and therefore any suitable test technique may be used.
[0038]
[0045] An exemplary narrow-striped optical emitter device according to the present disclosure comprises an active region comprising a semiconductor material, a first embedding region located at a first end of the narrow-striped optical emitter device, the first embedding region comprising a first embedding material, and a second embedding region located at a second end of the narrow-striped optical emitter device, the second embedding region comprising a second embedding material, wherein the active region comprises a ridge extending between the first and second ends of the narrow-striped optical emitter device, the first embedding material differing from the second embedding material with respect to one or more properties, the one or more properties comprising at least parameters and / or attributes relating to compressive strain.
[0039]
[0046] In an exemplary embodiment, the narrow-striped optical emitter device further comprises a transition region between a first embedded region and a second embedded region.
[0047] In the exemplary embodiment, the transition region includes both the first embedding material and the second embedding material.
[0040]
[0048] In an exemplary embodiment, the relative amounts of the first and second embedding materials within the transition region vary from the first end to the second end.
[0049] In the exemplary embodiment, the amount of the first embedding material decreases and the amount of the second embedding material increases in the direction from the first end to the second end.
[0041]
[0050] In exemplary embodiments, the combined total amount of the first embedding material decreases from the first end to the second end, while the amount of the second embedding material remains constant. In some examples, only one of the two embedding materials may be patterned (for example, the patterned material is not present at one end of the device but completely covers the other end, and a transition between the two is created by lithography).
[0042]
[0051] In an exemplary embodiment, the first end comprises one of the front and rear sections of the narrow stripe optical emitter device, and the second end comprises the other of the front and rear sections of the narrow stripe optical emitter device.
[0043]
[0052] In exemplary embodiments, the semiconductor material comprises a doped p-type (p-clad), a doped n-type (n-clad), and an active material. In this regard, the order of the p-clad and n-clad is neither important nor relevant.
[0044]
[0053] In an exemplary embodiment, the active region comprises one or more quantum wells (QWs).
[0054] In exemplary embodiments, the narrow-striped optical emitter device further comprises a metal contact layer covering at least a portion of the upper surface of the narrow-striped optical emitter device.
[0045]
[0055] In exemplary embodiments, the narrow-striped optical emitter device is a narrow-striped single-mode transverse laser device.
[0056] An exemplary method for fabricating a narrow-strip optical emitter device according to the present disclosure includes forming an active region comprising a semiconductor material, wherein forming the active region includes forming a ridge extending between a first end and a second end of the narrow-strip optical emitter device; forming a first embedded region at the first end of the narrow-strip optical emitter device, wherein forming includes adding a first embedded material; and forming a second embedded region at the second end of the narrow-strip optical emitter device, wherein forming includes adding a second embedded material, wherein the first embedded material differs from the second embedded material with respect to one or more properties, the one or more properties include at least a parameter and / or attribute relating to compressive strain.
[0046]
[0057] In an exemplary embodiment, the method further includes forming a transition region between a first embedded region and a second embedded region.
[0058] In an exemplary embodiment, the method further includes forming a transition region such that the transition region includes both the first and second embedding materials.
[0047]
[0059] In an exemplary embodiment, the method further includes forming a transition region such that the relative amounts of the first and second embedding materials within the transition region change from the first end to the second end.
[0048]
[0060] In an exemplary embodiment, the method further includes forming a transition region such that the amount of the first embedding material decreases and the amount of the second embedding material increases in the direction from the first end to the second end.
[0049]
[0061] In exemplary embodiments, the method further includes forming a transition region such that the combined sum of the amounts of the first embedding material decreases from the first end to the second end, while the amount of the second embedding material remains constant. In some examples, only one of the two embedding materials may be patterned (for example, the patterned material is not present at one end of the device but completely covers the other end, and a transition region is created between the two by lithography).
[0050]
[0062] In exemplary embodiments, the method further includes providing a metal contact layer on at least a portion of the upper surface of a narrow-strip optical emitter device.
[0063] In exemplary embodiments, the method further includes performing one or more of the following based on a deposition technique: forming an active region, forming a first embedded region, and forming a second embedded region.
[0051]
[0064] In exemplary embodiments, the deposition technique includes one or more of the following: plasma-excited chemical vapor deposition (PECVD) or atomic layer deposition (ALD), and pulsed laser deposition (PLD).
[0052]
[0065] As used herein, "and / or" means any one or more items in a list connected by "and / or". For example, "x and / or y" means any element of the three-element set {(x), (y), (x,y)}. In other words, "x and / or y" means "one or both of x and y". As another example, "x, y, and / or z" means any element of the seven-element set {(x), (y), (z), (x,y), (x,z), (y,z), (x,y,z)}. In other words, "x, y, and / or z" means "one or more of x, y, and z". As used herein, the term "exemplary" means serving as an unrestricted example, instance, or illustration. As used herein, the terms “for example” and “eg” begin with an enumeration of one or more non-limiting examples, instances, or illustrations.
[0053]
[0066] Although the Method and / or System has been described with reference to specific embodiments, it will be understood by those skilled in the art that various modifications may be made without departing from the scope of the Method and / or System, and equivalents may be used instead. In addition, many modifications may be made without departing from the scope of the Disclosure to adapt the teachings of the Disclosure to specific circumstances or materials. Thus, the Method and / or System is not limited to the specific embodiments disclosed, and the Method and / or System is intended to include all embodiments that fall within the scope of the appended claims.
Claims
1. A narrow-strip optical emitter device, An active region containing semiconductor material, A first embedding region located at the first end of the narrow-striped optical emitter device, wherein the first embedding region includes a first embedding material, A second embedding region located at the second end of the narrow-strip optical emitter device, wherein the second embedding region includes a second embedding material and Includes, The active region includes a ridge extending between the first end and the second end of the narrow-stripe optical emitter device. The first embedding material differs from the second embedding material in respect of one or more properties, The one or more characteristics include at least one or both of the parameters and attributes related to compressive strain. Narrow-strip optical emitter device.
2. A narrow-striped optical emitter device according to claim 1, further comprising a transition region between the first embedded region and the second embedded region.
3. A narrow-strip optical emitter device according to claim 2, wherein the transition region includes both the first embedding material and the second embedding material.
4. A narrow-striped optical emitter device according to claim 3, wherein the relative amount of the first embedding material and the second embedding material in the transition region changes from the first end to the second end.
5. A narrow-strip optical emitter device according to claim 4, wherein the amount of the first embedding material decreases and the amount of the second embedding material increases in the direction from the first end to the second end.
6. A narrow-striped optical emitter device according to claim 3, wherein the combined sum of the amounts of the first embedding material changes spatially from the first end to the second end, and the amount of the second embedding material remains constant.
7. A narrow-striped optical emitter device according to claim 1, wherein the first end includes one of the front section and the rear section of the narrow-striped optical emitter device, and the second end includes the other of the front section and the rear section of the narrow-striped optical emitter device.
8. A narrow-strip optical emitter device according to claim 1, wherein the semiconductor material comprises a doped p-type cladding (p-cladding), a doped n-type cladding (n-cladding), and an active material.
9. A narrow-striped optical emitter device according to claim 1, wherein the active region includes one or more quantum wells (QWs).
10. A narrow-strip optical emitter device according to claim 1, further comprising a metal contact layer covering at least a portion of the upper surface of the narrow-strip optical emitter device.
11. A narrow-striped optical emitter device according to claim 1, wherein the narrow-striped optical emitter device is a narrow-striped single-mode transverse laser device.
12. A method for fabricating a narrow-strip optical emitter device, wherein the method is A step of forming an active region including a semiconductor material, wherein the step of forming the active region includes a step of forming a ridge extending between the first end and the second end of the narrow stripe optical emitter device, A step of forming a first embedded region at the first end of the narrow-striped optical emitter device, wherein the forming step includes a step of adding a first embedded material, A step of forming a second embedded region at the second end of the narrow-striped optical emitter device, wherein the forming step includes a step of adding a second embedded material. Includes, The first embedding material differs from the second embedding material in respect of one or more properties, The one or more characteristics include at least one or both of the parameters and attributes related to compressive strain. method.
13. A method according to claim 12, further comprising the step of forming a transition region between the first embedded region and the second embedded region.
14. A method according to claim 13, further comprising the step of forming the transition region such that the transition region includes both the first embedding material and the second embedding material.
15. A method according to claim 14, further comprising the step of forming the transition region such that the relative amounts of the first embedding material and the second embedding material within the transition region change between the first end and the second end.
16. A method according to claim 15, further comprising the step of forming the transition region such that the amount of the first embedding material decreases and the amount of the second embedding material increases in a direction from the first end to the second end.
17. A method according to claim 14, further comprising the step of forming the transition region such that the combined sum of the amounts of the first embedding material decreases from the first end to the second end, and the amount of the second embedding material becomes constant.
18. A method according to claim 12, further comprising the step of providing a metal contact layer to at least a portion of the upper surface of the narrow stripe optical emitter device.
19. A method according to claim 12, comprising the step of performing one or more of the steps of forming the active region, forming the first embedding region, and forming the second embedding region, based on a deposition technique.
20. A method according to claim 12, wherein the deposition technique comprises one or more of plasma-excited chemical vapor deposition (PECVD) or atomic layer deposition (ALD) and pulsed laser deposition (PLD).