CMP slurry composition for polishing copper films and method for polishing copper films using the same

Abstract

The present invention provides a CMP slurry composition for polishing copper films that enables a high polishing speed of the copper film, suppresses the degree of dishing and corrosion of the polished copper film, ensures a low etching speed of the copper film, and thereby increases the flatness of the polished copper film surface. [Solution] The CMP slurry composition for polishing copper films comprises one or more polar solvents and non-polar solvents, an abrasive, and a dishing and corrosion improving agent, wherein the dishing and corrosion improving agent comprises a copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds of chemical formula 1.

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a CMP slurry composition for polishing copper films and a method for polishing copper films using the same. [Background technology]

[0002] With the increasing integration and performance of semiconductor integrated circuits in recent years, chemical mechanical polishing (CMP) has gained prominence as a microfabrication technology. It is frequently used in the planarization of interlayer insulating films, metal plug formation, and embedded wiring formation. Furthermore, copper and copper alloys are among the conductive materials used as wiring materials in recent years. Copper and copper alloys have lower resistance values ​​than aluminum and other metallic materials, offering the advantage of significantly improving the performance of integrated circuits.

[0003] CMP compositions for copper film polishing generally involve oxidizing the film using an oxidizing agent, polishing the film with an abrasive, and removing the eluted copper ions in the form of a ligand or chelator complex. To adjust the degree of this process, corrosion is controlled using a corrosion inhibitor. Colloidal silica is used as the abrasive particle. High polishing speeds are required to improve semiconductor productivity. To obtain high polishing speeds using CMP slurry compositions, methods include increasing the number of physical collisions by increasing the abrasive content, or increasing the elution rate by increasing the chelator content. However, the former increases the number of scratch defects, and the latter negatively affects the flatness of the polished surface when a large amount of chelator is included, and there are limitations to the amount that can be used due to the solubility of the chelator. [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] One object of the embodiments of the present invention is to provide a CMP slurry composition for polishing copper films that enables a high polishing speed of the copper film, reduces dishing and corrosion of the polished copper film, ensures a low etching speed of the copper film, and thereby increases the flatness of the polished copper film surface. [Means for solving the problem]

[0005] The present invention provides a CMP slurry composition for polishing copper films, comprising one or more polar and non-polar solvents, an abrasive, and a dishing and corrosion improving agent, wherein the dishing and corrosion improving agent comprises a copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds represented by the following chemical formula 1.

[0006] [ka]

[0007] In chemical formula 1, R 1 , R 2 , and R 3 Each of these is independently a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or is represented by the following chemical formula 1-1 or chemical formula 1-2.

[0008] [ka]

[0009] In chemical formula 1-1, * represents the linking site of an element. M is an alkali metal or NH4.

[0010] [ka]

[0011] In chemical formula 1-2, * represents the linking site of an element. m is an integer of 1 or more, R 4 is a linear or branched alkylene group having 1 to 20 carbon atoms, which may be substituted or unsubstituted, R 5 is an aryl group having 6 to 20 carbon atoms which may be substituted or unsubstituted or an arylalkyl group having 7 to 20 carbon atoms which may be substituted or unsubstituted.

[0012] The copper film polishing method of the present invention includes a step of polishing a copper film using the CMP slurry composition for polishing a copper film of the present invention.

Advantages of the Invention

[0013] One embodiment of the present invention can provide a CMP slurry composition for polishing a copper film, which has a high polishing rate of the copper film, suppresses dishing and corrosion of the polished copper film, ensures a low etching rate of the copper film, and thereby increases the flatness of the surface of the polished copper film.

Modes for Carrying Out the Invention

[0014] Hereinafter, specific embodiments will be described in detail so that those having ordinary knowledge in the technical field can easily implement them. However, the present invention can be implemented in various different forms and is not limited to the embodiments described here.

[0015] The terms used herein are for the purpose of describing exemplary embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly has a different meaning.

[0016] In this specification, "substituted" in "substituted or unsubstituted" means that one or more hydrogen atoms in the functional group are substituted with one of the following: a hydroxyl group, a C1 to C10 alkyl group or haloalkyl group, a C2 to C10 alkenyl group or haloalkenyl group, a C2 to C10 alkynyl group or haloalkynyl group, a C3 to C10 cycloalkyl group, a C3 to C10 cycloalkenyl group, a C6 to C10 aryl group, a C7 to C10 arylalkyl group, a C1 to C10 alkoxy group, a C6 to C10 aryloxy group, an amino group, a halogen group, a cyano group, and a thiol group.

[0017] A CMP slurry composition for polishing copper films according to one embodiment comprises one or more polar solvents and non-polar solvents, an abrasive, and a dishing and corrosion improving agent, wherein the dishing and corrosion improving agent comprises a copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds of chemical formula 1, which will be described later.

[0018] A copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds of chemical formula 1, can significantly increase the polishing rate of copper films and significantly decrease dishing and corrosion of polished copper films, as well as the etching rate of copper films. Therefore, this mixture can increase the polishing rate of copper films and increase the flatness of polished copper films.

[0019] The following describes in detail each component of the CMP slurry composition according to one embodiment.

[0020] solvent One or more of the polar and nonpolar solvents can reduce friction when polishing the copper film with abrasive particles. The one or more of the polar and nonpolar solvents may be water (e.g., ultrapure water or deionized water), organic amines, organic alcohols, organic alcoholamines, organic ethers, organic ketones, etc. Preferably, ultrapure water or deionized water can be used.

[0021] One or more polar and nonpolar solvents may be included in the CMP slurry composition in an amount of, for example, 30% to 99% by weight.

[0022] Abrasive The abrasive may include conventional abrasives used for polishing. For example, the abrasive may be metallic or nonmetallic oxide abrasive particles. The abrasive may include one or more of silica, alumina, ceria, titania, and zirconia, including, for example, colloidal silica and fumed silica. According to one embodiment, the abrasive may be, but is not limited to, silica (e.g., colloidal silica).

[0023] The abrasive consists of spherical or non-spherical particles, with an average particle size (D50) of primary particles ranging from 10 nm to 150 nm, for example, 20 nm to 70 nm. By meeting this range, a high polishing speed for copper films can be achieved, scratch formation can be prevented, and the flatness after polishing can be increased. "Average particle size (D50)" refers to a typical particle size known to those skilled in the art, and means the particle size corresponding to 50% by volume when the abrasive is distributed from minimum to maximum volume.

[0024] The abrasive particles may or may not be surface-modified. Surface-modified particles can further increase the dispersion stability in the CMP composition or further increase the polishing speed.

[0025] Surface modification can be performed by treating the abrasive with a surface modification compound. In one embodiment, a silane compound can be used as the surface modification compound. When the abrasive is silica, the silane compound can easily perform surface modification. The silane compound may contain, but is not limited to, one or more of the following: mercapto group-containing alkoxysilane, amino group-containing alkoxysilane, tetraalkoxysilane, and alkyl group-containing alkoxysilane having an alkyl group with 1 to 10 carbon atoms. In another embodiment, silica may be first surface modified with a compound having a sulfonate group or a phosphate group, and then secondarily surface modified with an alkoxysilane (e.g., tetraethoxysilane).

[0026] The abrasive may be included in the CMP slurry composition in an amount of 0.001% to 20% by weight, preferably 0.005% to 10% by weight, more preferably 0.01% to 5% by weight, and most preferably 0.05% to 3% by weight. By satisfying this range, the copper film can be polished at a sufficient polishing speed, the occurrence of scratches can be prevented, and the dispersion stability of the composition can be improved.

[0027] Dishing and corrosion correctors When a copper film is polished using a CMP slurry composition, dishing and corrosion may occur on the polished copper film. Dishing is a phenomenon in which metal grooves become depressed over a wide area due to excessive removal of copper during the polishing process of the copper film. Corrosion is a phenomenon in which metal grooves become depressed when surrounding materials are polished along with the copper during the polishing process of the copper film.

[0028] The dishing and corrosion improver comprises a copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds of chemical formula 1, as described later.

[0029] CMP slurry compositions containing only an acrylic acid-acrylamide copolymer as a dishing and corrosion corrector may cause a deterioration in overall wafer performance due to the high degree of dishing and corrosion. Furthermore, in CMP slurry compositions containing only the phosphorus-based compound of chemical formula 1, as described later, a decrease in polishing speed may occur depending on the content.

[0030] The copolymer of acrylic acid and acrylamide may also be a copolymer of monomer mixtures consisting of acrylic acid and acrylamide, as shown in Chemical Formula 2 below.

[0031] [ka]

[0032] In chemical formula 2, * represents the linking site of an element. n and m are the number of moles in each repeating unit.

[0033] In one embodiment, the molar ratio of acrylic acid to acrylamide in the monomer mixture may be 1:30 to 30:1. Within this range, the polishing rate of the copper film is not reduced, and dishing and corrosion improvement effects can be observed. For example, the above molar ratio may be 5:95 to 95:5, for example, 10:90 to 80:20, 50:50 to 80:20, or 70:30, based on a total of 100 moles of acrylic acid and acrylamide.

[0034] In one embodiment, the copolymer of acrylic acid and acrylamide may have a weight-average molecular weight (Mw) of 600,000 to 2,000,000 g / mol, for example, 1,000,000 to 2,000,000 g / mol or 1,000,000 to 1,500,000 g / mol. By satisfying this range, it is possible to avoid reducing the polishing rate of the copper film while also exhibiting dishing and corrosion improvement effects.

[0035] Here, the "weight-average molecular weight" may be determined using gel permeation chromatography with pullulan as the molecular weight standard reagent and an aqueous mobile phase.

[0036] The copolymer of acrylic acid and acrylamide may be included in the CMP slurry composition in amounts of 0.0001% to 1% by weight, for example, 0.0001% to 0.5% by weight, 0.0005% to 0.1% by weight, or 0.0005% to 0.01% by weight. Within this range, the polishing rate of the copper film is not reduced, and dishing and corrosion improvement effects can be observed.

[0037] Phosphorus compounds are represented by the following chemical formula 1. A CMP slurry composition may contain one or more phosphorus compounds represented by the following chemical formula 1.

[0038] [ka]

[0039] In chemical formula 1, R 1 , R 2 , and R 3 Each of these is independently a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or is represented by the following chemical formula 1-1 or chemical formula 1-2.

[0040] [ka]

[0041] In chemical formula 1-1, * represents the linking site of an element. M is an alkali metal or NH4.

[0042] [ka]

[0043] In Chemical Formula 1-2, * represents the linking site of elements, m is an integer of 1 or more, R 4 is a substituted or unsubstituted linear or branched alkylene group having 1 to 20 carbon atoms, R 5 is a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms.

[0044] In Chemical Formula 1, the alkali metal may be lithium, sodium, potassium, rubidium, cesium, or francium.

[0045] In one embodiment, in Chemical Formula 1, R 1 , R 2 , and R 3 may each independently be a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 4 to 15 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or may be represented by Chemical Formula 1-1 or Chemical Formula 1-2.

[0046] In one embodiment, the phosphorus compound can include one or more of the following Chemical Formulas 1-3 to 1-7. Here, n is an integer of 0 to 3.

[0047]

Chemical Formula

[0048] In Chemical Formula 1-7, R 4 , R 5 and m are as defined in Chemical Formula 1-2 respectively, R 6 is a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or is represented by Chemical Formula 1-1.

[0049] The phosphorus-based compound of chemical formula 1 may be included in the CMP slurry composition in amounts of 0.0001% to 1% by weight, for example, 0.0001% to 0.5% by weight, 0.0005% to 0.1% by weight, or 0.001% to 0.01% by weight. By satisfying this range, the polishing rate of the copper film is not reduced, and dishing and corrosion improvement effects can be observed.

[0050] The copolymer and the phosphorus compound of chemical formula 1 must be present in an appropriate ratio. In one embodiment, the weight ratio of copolymer to phosphorus compound of chemical formula 1 may be 1:1 to 1:10, for example, 1:2 to 1:7 or 1:3 to 1:6. By satisfying this range, the polishing speed of the copper film is not reduced, and a defect improvement effect can be demonstrated.

[0051] The dishing and corrosion improvers may be included in the CMP slurry composition in amounts of 0.0001% to 1% by weight, for example, 0.0001% to 0.5% by weight, 0.0005% to 0.1% by weight, or 0.001% to 0.01% by weight. Within this range, the polishing rate of the copper film will not decrease, and a defect improvement effect may be achieved.

[0052] Other ingredients The CMP slurry composition may further contain one or more of the following: an oxidizing agent, a complexing agent, a corrosion inhibitor, and a pH adjuster.

[0053] The oxidizing agent facilitates the polishing of the copper film by oxidizing it, and ensures a good surface roughness after polishing by making the surface of the copper film uniform.

[0054] The oxidizing agent may include one or more of the following: inorganic per compounds, organic per compounds, bromate or its salts, nitric acid or its salts, chloric acid or its salts, chromic acid or its salts, iodic acid or its salts, iron or its salts, copper or its salts, rare earth metal oxides, transition metal oxides, and potassium dichromate. A "per compound" is a compound containing one or more peroxide groups (-OO-) or an element in its highest oxidation state. Preferably, a per compound can be used as the oxidizing agent. For example, the per compound may be one or more of hydrogen peroxide, potassium periodate, calcium persulfate, and potassium ferricyanide, and preferably hydrogen peroxide.

[0055] The oxidizing agent may be included in the CMP slurry composition in an amount of 0.01% to 5% by weight, preferably 0.05% to 4% by weight, and more preferably 0.1% to 3% by weight. By satisfying this range, the polishing selectivity ratio of the copper film can be improved.

[0056] The complexing agent can further increase the polishing rate of the copper film.

[0057] The complexing agent may include common complexing agents known to those skilled in the art. For example, complexing agents include amino acids (e.g., glycine), imidazole, ammonia, amino alcohols, polyamines, polyalcohols (e.g., dialcohols, trialcohols or polyalcohols, ethylene glycol, pyrocatechol, pyrogallol, etc.), carbonyl compounds (e.g., acetylacetonate, etc.), simple carboxylic acids and their salts (e.g., acetic acid and its salts, aryl carboxylic acids and their salts, etc.), carboxylic acids and their salts containing one or more hydroxyl groups (e.g., glycolic acid and its salts, lactic acid and its salts, gluconic acid and its salts, gallic acid and its salts, etc.), di-, tri-, poly-carboxylates This may include, but is not limited to, sulfonic acids and their salts (e.g., oxalic acid and its salts, phthalic acid and its salts, citric acid and its salts, succinic acid and its salts, tartaric acid and its salts, malic acid and its salts, EDTA and its salts (e.g., dipotassium EDTA), mixtures thereof, etc.), carboxylic acids and their salts containing one or more sulfonic acids and / or phosphonic acid groups, di-, tri-, or polyalcohols (e.g., ethylene glycol, pyrocatechol, pyrogallol, tannic acid, etc.), and amine-containing compounds (e.g., ammonia, amino acids, amino alcohols, di-, tri-, and polyamines, etc.).

[0058] The complexing agent may be included in the CMP slurry composition in an amount of 0.01% to 5% by weight, preferably 0.05% to 5% by weight, and more preferably 0.1% to 5% by weight. By satisfying this range, the polishing speed and dispersion stability of the slurry are improved, and good surface properties of the copper film can be obtained.

[0059] A corrosion inhibitor is a substance that delays the chemical reaction of an oxidizing agent, thereby suppressing corrosion in low-step areas where physical abrasion does not occur, and acting as an abrasive modifier that enables abrasive polishing in high-step areas where polishing occurs by being removed by the physical action of the abrasive.

[0060] A nitrogen-containing compound may be used as a corrosion inhibitor. For example, the corrosion inhibitor may include one or more of ammonia, alkylamines, amino acids, imines, and azoles.

[0061] In one embodiment, the corrosion inhibitor may include one or more azole compounds, such as triazole compounds and tetraazole compounds.

[0062] The triazole may be benzotriazole, methylbenzotriazole (tolyltriazole) including 5-methyl-1H-benzotriazole, methylbenzotriazole (tolyltriazole) including 4-methylbenzotriazole, benzotriazole compounds including ethylbenzotriazole, propylbenzotriazole, butylbenzotriazole, pentylbenzotriazole, hexylbenzotriazole, hydroxybenzotriazole, etc., 1,2,4-triazole, 1,2,3-triazole, etc. The triazole may be included in the CMP slurry composition as triazole itself or as a salt of triazole.

[0063] The tetraazole may contain one or more of 5-aminotetrazole, 5-methyltetrazole, and 5-phenyltetrazole. The tetraazole may be included in the CMP slurry composition as tetraazole itself or as a salt of tetraazole.

[0064] The corrosion inhibitor may be included in the CMP slurry composition in an amount of 0.001% to 5% by weight, preferably 0.005% to 1% by weight, and more preferably 0.01% to 0.1% by weight. By satisfying this range, it is possible to achieve a sufficient polishing rate for the copper film while suppressing dishing in the copper film during polishing.

[0065] The CMP slurry composition may have a pH of 5 to 9, preferably 6 to 8. Maintaining this range helps prevent corrosion of the copper film.

[0066] The CMP slurry composition may further contain a pH adjusting agent to adjust the pH. The pH adjusting agent may include one or more inorganic acids, such as nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid, or one or more organic acids, such as organic acids with a pKa value of 6 or less, such as acetic acid and citric acid. The pH adjusting agent may also include one or more bases, such as sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, and potassium carbonate.

[0067] The CMP slurry composition may further contain one or more insecticides and fungicides to prevent microbial growth and / or contamination. The insecticides and fungicides may each include materials commonly used in CMP slurry compositions.

[0068] The CMP slurry composition may further contain common additives such as surfactants, dispersants, modifiers, and surfactants.

[0069] A copper film polishing method according to an embodiment of the present invention includes the step of polishing a copper film using the copper film polishing CMP slurry composition of the present invention. [Examples]

[0070] The structure and operation of the present invention will be described in more detail below through preferred embodiments of the present invention. However, these are presented as preferred examples of the present invention and should not be construed as limiting the present invention in any way.

[0071] The components used in the following examples and comparative examples, and their specific specifications, are as follows: Abrasive: Colloidal silica (NP60, average particle size: 50 nm) Complexing agent: Glycine Corrosion inhibitor 1:1,2,4-triazole Corrosion inhibitor 2: 5-methyl-1H-benzotriazole Dishing and corrosion improver 1: A copolymer of acrylic acid and acrylamide obtained by copolymerizing acrylic acid and acrylamide in a molar ratio of 7:3, with a weight-average molecular weight of 1,300,000. Dishing and corrosion correcting agent 2 Dishing and corrosion correcting agent 2-1: A compound in which n is 1 in chemical formula 1-3. Dishing and corrosion correcting agent 2-2: Chemical formula 1-4 Dishing and corrosion correcting agents 2-3: Chemical formulas 1-5 Dishing and corrosion correcting agents 2-4: Chemical formula 1-6 Dishing and corrosion improvers 2-5: In chemical formula 1-7, R 4 It is an ethylene group, R 5 is a benzyl group, R 6 ha-O - NH4 + A compound in which m is an integer greater than or equal to 1. Oxidizing agent: Hydrogen peroxide pH adjuster: Nitrate or potassium hydroxide

[0072] Example 1 A CMP slurry composition was prepared by adding 0.2% by weight of abrasive, 1.5% by weight of complexing agent, 0.0033% by weight of corrosion inhibitor 1, 0.0021% by weight of corrosion inhibitor 2, 0.001% by weight of dishing and corrosion improver 1, and 0.005% by weight of dishing and corrosion improver 2-1 to the total weight of the CMP slurry composition, followed by the addition of ultrapure water. The pH of the CMP slurry composition was adjusted to pH 7.3 using a pH adjusting agent. After pH adjustment, 1.00% by weight of hydrogen peroxide (liquid, Dongwoo Finechem) was added as an oxidizing agent to prepare the CMP slurry evaluation compositions shown in Table 1 below. In Table 1 below, "-" means that the component is not included.

[0073] Example 2 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that 0.005% by weight of dishing and corrosion improver 2-2 was included instead of dishing and corrosion improver 2-1.

[0074] Example 3 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that 0.005% by weight of dishing and corrosion improver 2-3 was included instead of dishing and corrosion improver 2-1.

[0075] Example 4 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that 0.005% by weight of dishing and corrosion improver 2-4 was included instead of dishing and corrosion improver 2-1.

[0076] Example 5 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that 0.005% by weight of dishing and corrosion improver 2-5 was included instead of dishing and corrosion improver 2-1.

[0077] Comparative Example 1 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that it did not contain either dishing and corrosion improver 1 or dishing and corrosion improver 2-1.

[0078] Comparative Example 2 A CMP slurry evaluation composition was prepared in the same manner as in Example 1, except that it did not contain dishing and corrosion improver 2-1.

[0079] The following polishing evaluations were performed on the CMP slurry compositions for copper film polishing prepared in the examples and comparative examples.

[0080] (1) Polishing rate of copper film (unit: Å / min) In the polishing evaluation, a copper film was polished using AMAT's 300mm polishing equipment under the following conditions: platen rotation speed of 93 rpm, head rotation speed of 87 rpm, polishing pressure of 1.5 psi, slurry supply flow rate of 150 ml / min, and polishing time of 60 seconds. Rodel's IC1010 was used as the polishing pad. The polishing speed was determined by converting the difference in film thickness before and after polishing from the electrical resistance value.

[0081] (2) Disping of copper film and corrosion of copper film (Unit: Å) The AFM values ​​were determined after polishing with the same over-polishing time.

[0082] (3) Etching rate of copper film (unit: Å / min) The polishing solution was held in a high-temperature (60°C) bath for 30 minutes to increase the temperature. After adding hydrogen peroxide solution, the coupon wafer was placed in the bath and exposed for 15 seconds. The etching rate of the thickness was then calculated based on the value from a resistance measuring instrument.

[0083] [Table 1]

[0084] [Table 2]

[0085] As shown in Table 2, the CMP slurry composition according to the embodiment of the present invention has a remarkably high polishing rate for the copper film and a low etching rate for the copper film, thereby increasing the polished flatness of the copper film.

[0086] On the other hand, the comparative example of a copper film polishing composition has a low polishing speed against the copper film, and the degree of copper dishing, copper corrosion, and copper etching is high, resulting in low polishing flatness of the copper film.

[0087] Simple modifications or alterations of the present invention can be readily implemented by those with ordinary skill in the art, and any such modifications or alterations can be considered to fall within the scope of the present invention.

Claims

1. It comprises one or more polar and non-polar solvents, an abrasive, and a dishing and corrosion improving agent. The dishing and corrosion improver comprises a copolymer of acrylic acid and acrylamide, and a mixture of phosphorus compounds represented by the following chemical formula 1. 【Chemistry 1】 In the above chemical formula 1, R １ , R ２ , and R ３ Each of these is independently a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or is represented by the following chemical formula 1-1 or chemical formula 1-2. 【Chemistry 2】 In the above chemical formula 1-1, * indicates a linking site of an element. M is an alkali metal or NH ４ And, 【Transformation 3】 In the aforementioned chemical formula 1-2, * indicates a linking site of an element. m is an integer greater than or equal to 1, R ４ This is a substituted or unsubstituted linear or branched alkylene group having 1 to 20 carbon atoms. R ５ The CMP slurry composition for polishing copper films is a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms.

2. In the above Chemical Formula 1, R １ , R ２ , and R ３ are each independently a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 4 to 15 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or are represented by the above Chemical Formula 1-1 or the above Chemical Formula 1-2. The CMP slurry composition for copper film polishing according to claim 1.

3. The phosphorus-based compound comprises one or more of the following chemical formulas 1-3 to 1-7: 【Chemistry 4】 In the above chemical formulas 1-3, n is an integer from 0 to 3. In the aforementioned chemical formulas 1 and 7, R ４ , R ５ and m are defined as shown in the above chemical formulas 1-2, R ６ The CMP slurry composition for polishing copper films according to claim 1, wherein is a hydroxyl group, a substituted or unsubstituted linear or branched alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 20 carbon atoms, or is represented by the chemical formula 1-1.

4. The CMP slurry composition for polishing copper films according to claim 1, wherein the acrylic acid:acrylamide in the monomer mixture for the copolymer is in a molar ratio of 1:30 to 30:

1.

5. The CMP slurry composition for polishing copper films according to claim 1, wherein the copolymer of acrylic acid and acrylamide has a weight-average molecular weight (Mw) of 600,000 to 2,000,000.

6. The CMP slurry composition for polishing copper films according to claim 1, wherein the copolymer and the phosphorus-based compound of chemical formula 1 are in a weight ratio of 1:1 to 1:

10.

7. The CMP slurry composition for polishing copper films according to claim 1, wherein the copolymer of acrylic acid and acrylamide and the phosphorus compound of chemical formula 1 are each contained in the CMP slurry composition in an amount of 0.0001% to 1% by weight.

8. The CMP slurry composition for polishing copper films according to claim 1, further comprising one or more of an oxidizing agent, a complexing agent, a corrosion inhibitor, and a pH adjusting agent.

9. The abrasive is present in an amount of 0.001% to 20% by weight, The dishing and corrosion improver are provided in an amount of 0.0001% to 1% by weight. The complexing agent is present in an amount of 0.01% to 5% by weight. The corrosion inhibitor is present in an amount of 0.001% to 5% by weight. The CMP slurry composition for polishing copper films according to claim 8, comprising 0.01% to 5% by weight of the oxidizing agent.

10. The CMP slurry composition for polishing copper films according to claim 1, wherein the pH is 5 to 9.

11. A method for polishing a copper film, comprising the step of polishing a copper film using a CMP slurry composition for polishing copper films according to any one of claims 1 to 10.

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