Method for adjusting a multi-charged particle beam, method for lithography of a multi-charged particle beam, and apparatus for lithography of a multi-charged particle beam.

Abstract

This invention provides a method that can reduce positional misalignment caused by shifts in the linear component of the beam array shape in multibeam lithography. [Solution] The method is characterized by comprising the steps of: obtaining the beam array shape of a multi-charged particle beam from beam measurement or from the positional displacement distribution caused by the beam array shape obtained from drawing results; calculating a rotation correction amount for the beam array shape using the obtained beam array shape and a first coefficient that indicates a displacement component that shifts in a second direction orthogonal to the first direction in proportion to the design coordinates in a first direction orthogonal to the direction in which the drawing is performed while the stage on which the sample is placed is continuously moved; calculating a magnification correction amount for the beam array shape using a second coefficient that indicates a displacement component that shifts in a first direction in proportion to the design coordinates in the first direction of the measured beam array shape; and performing rotation correction of the beam array shape according to the rotation correction amount and magnification correction of the beam array shape according to the magnification correction amount.

Claims

1. A step of obtaining the beam array shape of a multi-charged particle beam from beam measurements or from the positional displacement distribution caused by the beam array shape obtained from the drawing results, A step of calculating a rotation correction amount for the beam array shape using a first coefficient that indicates a displacement component in a second direction perpendicular to the first direction, proportional to the design coordinates in a first direction perpendicular to the direction in which the acquired beam array shape is drawn while the stage on which the sample is placed is continuously moved, A step of calculating a magnification correction amount for the beam array shape using a second coefficient that indicates a displacement component that shifts in the first direction in proportion to the design coordinates of the measured beam array shape in the first direction, A step of performing rotational correction of the beam array shape according to the rotational correction amount and magnification correction of the beam array shape according to the magnification correction amount, A method for adjusting a multi-charged particle beam, characterized by comprising the following:

2. The method for adjusting a multi-charged particle beam according to claim 1, characterized in that a predetermined offset is added to the first coefficient or the second coefficient, respectively, to calculate the rotation correction amount and the magnification correction amount of the beam array shape.

3. The rotational correction is performed by a first electrostatic lens or an electromagnetic lens. The aforementioned magnification correction is performed by the second electrostatic lens. A method for adjusting a multi-charged particle beam according to claim 1 or 2, characterized in that it is the same as described in claim 1 or 2.

4. The method for adjusting a multi-charged particle beam according to claim 3, further comprising the step of adjusting one of the crossover position and focus position of the multi-charged particle beam using a third electrostatic lens.

5. A adjustment step according to the adjustment method for a multi-charged particle beam described in claim 1 or 2, A drawing step of drawing a pattern on a sample while moving continuously relative to the second direction, A multi-charged particle beam lithography method comprising the following features.

6. A stage for placing the sample, A source that emits a multi-charged particle beam, A measuring unit for measuring the beam array shape of the multi-charged particle beam, A rotation correction amount calculation unit calculates a rotation correction amount for the beam array shape using a first coefficient that indicates a shift component in a second direction perpendicular to the first direction, proportional to the design coordinates in a first direction perpendicular to the direction in which the measured beam array shape is drawn while the stage on which the sample is placed is continuously moved, A magnification correction amount calculation unit calculates a magnification correction amount for the beam array shape using a second coefficient that indicates a displacement component that shifts in the first direction in proportion to the design coordinates of the measured beam array shape in the first direction, A first electrostatic lens or electromagnetic lens that performs rotational correction of the beam array shape according to the rotational correction amount, A second electrostatic lens that performs magnification correction of the beam array shape according to the magnification correction amount, A multi-charged particle beam lithography apparatus characterized by being equipped with the following features.

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