Resist composition, laminate, and pattern formation method

Abstract

This invention provides a non-chemically amplified resist composition that exhibits excellent sensitivity and critical resolution in photolithography using high-energy rays, particularly EB lithography and EUV lithography, as well as a laminate and pattern formation method using the resist composition. [Solution] A resist composition characterized by comprising at least one hypervalent iodine compound selected from the following formulas (1), (2), and (3), a carboxyl group-containing compound, and a solvent. TIFF2026104178000091.tif34166

Claims

1. A resist composition characterized by comprising at least one hypervalent iodine compound selected from the following formulas (1), (2), and (3), a carboxyl group-containing compound, and a solvent. 【Chemistry 1】 (where n1 is 0, 1, 2 or 3, n2 is 0, 1 or 2, and n3 is 0, 1, 2, 3 or 4. R １１ ~R １６ are each independently a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms which may contain a hetero atom. R ２１ ~R ２４ are each independently a halogen atom or a hydrocarbyl group having 1 to 40 carbon atoms which may contain a hetero atom. When n1 is 2 or more, each R ２１ may be the same as or different from each other, and a plurality of R ２１ may combine with each other to form a ring together with the carbon atoms of the heteroaromatic ring to which they are attached. When n2 is 2, each R ２３ may be the same as or different from each other, and a plurality of R ２３ may combine with each other to form a ring together with the carbon atoms of the heteroaromatic ring to which they are attached. When n3 is 2 or more, each R ２４ may be the same as or different from each other, and a plurality of R ２４ may combine with each other to form a ring together with the carbon atoms of the heteroaromatic ring to which they are attached.)

2. The resist composition according to claim 1, characterized in that the carboxyl group-containing compound is either or both a polymer containing repeating units represented by the following formula (4) and a compound represented by the following formula (5). 【Chemistry 2】 (In the formula, R Ａ X is a hydrogen atom, a halogen atom, a methyl group, or a trifluoromethyl group. Ａ This refers to a single bond, a phenylene group, a naphthylene group, or *-C(=O)-O-X Ａ１ - is true. X Ａ１ This is a saturated hydrocarbylene group, phenylene group, or naphthylene group having 1 to 10 carbon atoms, and the saturated hydrocarbylene group may contain a hydroxyl group, an ether bond, an ester bond, or a lactone ring. * represents the bond with the carbon atoms of the main chain. p is 1, 2, 3, or 4. R ３１ is a p-valent hydrocarbon group having 1 to 40 carbon atoms or a p-valent heterocyclic group having 2 to 40 carbon atoms, and when p is 2, R ３１ This may be an ether bond, a carbonyl group, an azo group, a thioether bond, a carbonate bond, a carbamate bond, a sulfinyl group, or a sulfonyl group. Furthermore, some or all of the hydrogen atoms of the p-valent hydrocarbon group or p-valent heterocyclic group may be substituted with a group containing a heteroatom, and the -CH of the p-valent hydrocarbon group ２ - May be partially substituted with a group containing a heteroatom. ３２ This is a single bond or a hydrocarbylene group having 1 to 20 carbon atoms, and some or all of the hydrogen atoms of the hydrocarbylene group may be substituted with a group containing a heteroatom, and the -CH of the hydrocarbylene group ２ - A portion of it may be substituted with a group containing a heteroatom. When p is 2, 3, or 4, each R ３２ They may be the same or different from each other.

3. A laminate characterized by comprising a substrate and a resist film on the substrate which is a film formed from the resist composition described in claim 1 or claim 2.

4. The laminate according to claim 3, further comprising a resist underlayer film between the substrate and the resist film.

5. The laminate according to claim 3, characterized in that the resist film contains a ligand exchange reaction product between the hypervalent iodine compound and the carboxyl group-containing compound.

6. A pattern forming method characterized by comprising the steps of: forming a resist film on a substrate or on a resist underlayer of a substrate having a resist underlayer laminated thereon using the resist composition according to claim 1 or claim 2; exposing the resist film with a high-energy beam; and developing the exposed resist film using a developer.

7. The pattern formation method according to claim 6, characterized in that i-rays, KrF excimer laser light, ArF excimer laser light, electron beams, or extreme ultraviolet light are used as the high-energy rays.

8. The pattern forming method according to claim 6, characterized in that the developing solution used dissolves the exposed areas but not the unexposed areas.

9. The pattern forming method according to claim 7, characterized in that the developing solution used dissolves the exposed areas but does not dissolve the unexposed areas.

10. The pattern forming method according to claim 6, characterized in that the developing solution used dissolves the unexposed areas but not the exposed areas.

11. The pattern forming method according to claim 7, characterized in that the developing solution used dissolves the unexposed areas but not the exposed areas.

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