Photoresponsive material, method for manufacturing a photoresponsive material, and photoresponsive device

Abstract

To provide a photoresponsive material that solves at least one of the problems of conventional technology. [Solution] The material has a crystalline structure formed by crosslinking at least one lanthanide with an organic group having 1 to 3 carbon atoms, wherein the organic group contains at least carbon atoms which may be partially or entirely substituted with other nonmetallic carbon group elements, and oxygen atoms which may be partially or entirely substituted with other nonmetallic oxygen group elements. A photoresponsive material having a peak component in the range of 533 eV to 534 eV in the O1s spectrum obtained by hard X-ray photoelectron spectroscopy.

Claims

1. It has a crystalline structure formed by crosslinking at least one lanthanide with an organic group having 1 to 3 carbon atoms, The organic group comprises at least an oxygen atom which may be partially or entirely substituted with another nonmetallic oxygen group element. A photoresponsive material having a peak component in the range of 533.0 eV to 534.0 eV in the O1s spectrum obtained by hard X-ray photoelectron spectroscopy.

2. The photoresponsive material according to claim 1, wherein the crystal structure is reversibly changed by light irradiation.

3. The photoresponsive material according to claim 1 or 2, wherein the lanthanide comprises an element capable of adopting multiple oxidation states.

4. The photoresponsive material according to any one of claims 1 to 3, wherein the crystal structure has space group R3m or R-3m symmetry.

5. The photoresponsive material according to any one of claims 1 to 4, wherein the organic group comprises a carbon atom, an oxygen atom, and a hydrogen atom.

6. The photoresponsive material according to any one of claims 1 to 5, wherein the lattice constants of the crystal structure are 1.0480 nm ≤ a, b ≤ 1.0500 nm and 0.4000 nm ≤ c ≤ 0.4020 nm.

7. The photoresponsive material according to any one of claims 1 to 6, wherein the oxidation state of the lanthanide is divalent and trivalent.

8. The photoresponsive material according to claim 2, wherein the wavelength of the light irradiation is 200 nm or more and less than 700 nm.

9. The ratio of the electrical resistivity before light irradiation to the electrical resistivity after light irradiation is 1.0 × 10⁻⁶ ９ The above 1.0 x 10 １３ The photoresponsive material according to claim 2, which is as follows:

10. In the ATR-FTIR spectrum, at wavenumber 1030 cm⁻¹ －１ More than 1100cm －１ A photoresponsive material according to any one of claims 1 to 9, having an absorption maximum peak in the following areas.

11. A method for producing a photoresponsive material according to any one of claims 1 to 10, comprising solvothermating a solution containing a lanthanide source and an organic element source.

12. The method for producing a photoresponsive material according to claim 11, wherein the lanthanide source comprises a lanthanide halide and / or a lanthanide salt.

13. The method for producing a photoresponsive material according to claim 11 or 12, wherein the organic element source includes benzenehexathiol.

14. A photoresponsive device comprising a photoresponsive material according to any one of claims 1 to 10.

15. A photoresponsive device comprising a pair of electrodes, a photoresponsive layer disposed between the pair of electrodes and containing a photoresponsive material according to any one of claims 1 to 10, and a control circuit connected to the pair of electrodes, wherein at least one of the pair of electrodes is a light-transmitting electrode.

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