Frequency-based impedance adjustment in a tuning circuit

Abstract

A substrate processing system for processing substrates in a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from an RF generator and impedance matches the input of the matching network to the output of the RF generator. The tuning circuit, unlike the matching network, includes circuit components having a first impedance. The tuning circuit receives the output of the matching network and outputs a second RF signal to a first electrode on the substrate support. The controller determines a target impedance for the circuit components and, based on the target impedance, signals the RF generator to adjust the first frequency of the first RF signal received by the matching network to a second frequency, thereby changing the first impedance of the circuit components to match the target impedance.

Description

[Technical Field]

[0001] Cross-reference of related applications This application claims the benefit of U.S. Provisional Application No. 62 / 935,976, filed November 15, 2019. The entire disclosure of the application referenced above is incorporated herein by reference.

[0002] This disclosure relates to an electrical holding device using electrostatic attraction, and more particularly to a tuning circuit for clamp electrodes and radio frequency (RF) electrodes of an electrical holding device. [Background technology]

[0003] The background information provided herein is intended to provide a general overview of the contents of this disclosure. Any research by the inventors named at this time, as well as any description that is not otherwise considered prior art at the time of filing, within the scope described in this background information section, shall not be recognized as prior art to this disclosure, whether express or implied.

[0004] A substrate processing system can be used to perform etching, deposition, and / or other processing on substrates such as semiconductor wafers. Exemplary processes that can be performed on a substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), ion implantation, and / or other etching, deposition, and cleaning processes. For example, during an etching process, the substrate may be placed on an electrostatic chuck (ESC) within the substrate processing system, and a thin film on the substrate is etched. [Overview of the Initiative]

[0005] A substrate processing system is provided for processing substrates in a processing chamber. The substrate processing system includes a matching network, a first tuning circuit, and a controller. The matching network receives a first radio frequency signal having a first frequency from a radio frequency generator and is configured to impedance match the input of the matching network to the output of the radio frequency generator. The first tuning circuit, unlike the matching network, includes a first circuit component having a first impedance. The first tuning circuit receives the output of the matching network and is configured to output a second radio frequency signal to a first electrode on a substrate support. The controller is configured to determine a target impedance for the first circuit component and, based on the target impedance, to signal the radio frequency generator to adjust the first frequency of the first radio frequency signal received by the matching network to a second frequency, thereby changing the first impedance of the first circuit component to match the target impedance.

[0006] In other features, the substrate processing system further includes a radio frequency generator having a center frequency and configured to generate a first radio frequency signal having a first frequency based on a control signal. A controller is configured to generate the control signal. The first frequency is within a predetermined range of the center frequency.

[0007] In other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuning circuit.

[0008] In other features, the controller is configured to adjust the first frequency to the second frequency independently of impedance matching the input of the matched network to the output of the radio frequency generator.

[0009] In other features, the controller is configured to adjust the first frequency to a second frequency without affecting the impedance matching between the matched network and the radio frequency generator.

[0010] In other features, the matching network is configured to maintain impedance matching between the input of the matching network and the output of the radio frequency generator while the controller adjusts the first frequency to the second frequency.

[0011] In other features, the first tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to a first electrode. The second circuit component is connected to a second electrode on a substrate support. The controller is configured to adjust the first frequency to a second frequency, thereby adjusting the first impedance of the first circuit component and the second impedance of the second circuit component, and changing the power distribution from the first tuning circuit to the first electrode and the second electrode.

[0012] In other characteristics, the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal.

[0013] In other features, the controller is configured to adjust the capacitance or inductance of the first circuit component, in addition to adjusting the first frequency to a second frequency when adjusting the first impedance to match the target impedance.

[0014] In other features, the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value while adjusting the first impedance.

[0015] In other features, the first tuning circuit distributes the total power received from the matching network to the first and second circuit components. The controller is configured to adjust the first frequency to the second frequency and to adjust the first portion of the total power supplied to the first circuit component and the second portion of the total power supplied to the second circuit component.

[0016] In other features, the substrate processing system further includes a source terminal and a substrate support including a first electrode and a second electrode. The first electrode and the second electrode receive power from a matching network via the source terminal. The first tuning circuit is a first impedance set connected in series between the first electrode and the matching network, the first impedance set including at least one of a first impedance set that receives a second radio frequency signal from the matching network via the source terminal, or a second impedance set connected between the output of the matching network and a reference terminal, the second impedance set receiving a second radio frequency signal from the matching network via the source terminal.

[0017] In other features, the first tuning circuit includes a first impedance set and a second impedance set.

[0018] In other features, the substrate processing system further includes a second tuning circuit, a third tuning circuit, and a third electrode. The first tuning circuit is connected to the first electrode to modify the output of the matching network and generate a second radio frequency signal. The second tuning circuit is connected to the second electrode and configured to modify the output of the matching network and generate a third radio frequency signal provided to the second electrode. The third tuning circuit is connected to the third electrode and configured to modify the output of the matching network and generate a fourth radio frequency signal provided to the third electrode.

[0019] In other features, the substrate support is an electrostatic chuck. The first and second electrodes are clamp electrodes, configured to receive a clamp voltage and clamp the substrate to the substrate support. The third electrode is a bias electrode, configured to receive a bias voltage.

[0020] In other features, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second and third electrodes are bias electrodes.

[0021] In other features, a matching network is not connected between (i) the source terminal and (ii) the first electrode and the second electrode.

[0022] In other features, the first circuit component is connected to the first electrode and the second electrode on the substrate support and affects the power distribution to the first electrode and the second electrode.

[0023] In other features, a method of operating a substrate processing system is provided. The method includes selecting a process, determining a recipe including system operation parameters for the selected process, determining a first target impedance value for the frequency of the radio frequency generator and the impedance of the tuning circuit based on the selected process and the system operation parameters, sending a signal to the radio frequency generator to generate a first radio frequency signal, impedance matching the output of the radio frequency generator via a matching network, the matching network being different from the tuning circuit, tuning the signal output of the matching network via the tuning circuit to generate a second radio frequency signal, providing the second radio frequency signal to the first electrode on the substrate support, and adjusting the first frequency of the first radio frequency signal to a second frequency to adjust the impedance of the tuning circuit to match the first target impedance value.

[0024] In other features, the method further includes adjusting the first frequency to the second frequency regardless of impedance matching the input of the matching network to the output of the radio frequency generator.

[0025] In other features, the method further includes adjusting the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

[0026] In other features, the method further includes maintaining impedance matching between the input to the matched network and the output to the radio frequency generator via the matched network while adjusting the first frequency to the second frequency.

[0027] In other features, the method further includes collecting sensor output data, determining a second target impedance value based on the sensor output data, and adjusting the impedance of the tuning circuit by adjusting the first frequency to a third frequency to match the second impedance value.

[0028] In other features, the method further includes adjusting at least one of the capacitance or inductance of the impedance to match the impedance to a first target impedance value.

[0029] In other features, the method further includes adjusting the impedance by adjusting the first frequency to a second frequency without adjusting the capacitance of the impedance, and matching it to a first impedance value.

[0030] In other features, the method further includes adjusting the impedance by adjusting the first frequency to a second frequency without adjusting the impedance inductance, and matching it to a first impedance value.

[0031] In other features, the impedance is connected in parallel to the first and second electrodes on the substrate support and affects the power distribution to the first and second electrodes.

[0032] In other features, the method further includes performing a processing operation for a selected process, which includes placing a substrate on a substrate support in a processing chamber and supplying power from a matching network to a first electrode and a second electrode on the substrate support. The tuning circuit includes at least one of a first impedance set connected in series between the first electrode and the matching network, the first impedance set receiving a second radio frequency signal from the matching network, or a second impedance set connected between the output of the matching network and a reference terminal, the second impedance set receiving a second radio frequency signal from the matching network.

[0033] In other features, the method further includes (i) adjusting a first frequency to a second frequency, and (ii) adjusting at least one of the capacitance or inductance of the first or second impedance set, while performing a processing operation.

[0034] In other features, the method further includes collecting sensor output data while performing a processing operation, determining one or more parameters based on the sensor output data, and adjusting the impedance values ​​of a first impedance set or a second impedance set based on one or more parameters.

[0035] In other features, the method further includes determining the features or characteristics of a processing chamber and setting impedance values ​​for a first impedance set or a second impedance set based on the features or characteristics.

[0036] In other features, the method further includes determining the features or characteristics of a substrate support and setting impedance values ​​for a first impedance set or a second impedance set based on the features or characteristics.

[0037] In other features, the method further includes adjusting the impedance of at least one of the first impedance set or the second impedance set to follow a respective trajectory based on the change in characteristics.

[0038] In other features, the method further includes calculating or determining a trajectory based on features; properties; one or more other features of the substrate, substrate support, or processing chamber; and at least one of the one or more other properties of the substrate, substrate support, or processing chamber.

[0039] In other features, the method further includes determining the features or characteristics of the substrate and setting the impedance value of the tuning circuit based on the features or characteristics.

[0040] In other features, the method further includes supplying a clamp voltage to a first electrode via a matching network to clamp the substrate to a substrate support, supplying a bias voltage to a second electrode, and tuning the clamp voltage and bias voltage via a tuning circuit or another tuning circuit. The substrate support is an electrostatic chuck.

[0041] In other features, a substrate processing system is provided, which includes a matching network, a tuning circuit, and a controller. The matching network receives a first radio frequency signal having a first frequency from a radio frequency generator and is configured to impedance match the input of the matching network to the output of the radio frequency generator. The tuning circuit is separate from the matching network. The tuning circuit is configured to output a second radio frequency signal to a first electrode in the substrate support and a third radio frequency signal to a second electrode in the substrate support, based on the output of the matching network. The controller is configured to send a signal to the radio frequency generator and adjust the power distribution to the first and second electrodes in the substrate support by adjusting the first frequency of the first radio frequency signal received by the matching network to a second frequency.

[0042] In other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuning circuit.

[0043] In other features, the controller is configured to adjust the first frequency to the second frequency independently of impedance matching the input of the matched network to the output of the radio frequency generator.

[0044] In other features, the controller is configured to adjust the first frequency to a second frequency without affecting the impedance matching between the matched network and the radio frequency generator.

[0045] In other features, the matching network is configured to maintain impedance matching between the input of the matching network and the output of the radio frequency generator while the controller adjusts the first frequency to the second frequency.

[0046] In other features, the tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to a first electrode. The second circuit component is connected to a second electrode, and when the first frequency is tuned to the second frequency, the first impedance of the first circuit component and the second impedance of the second circuit component are changed.

[0047] In other features, the tuning circuit supplies total energy to the first and second electrodes. When the first frequency is tuned to the second frequency, the first and second impedances are adjusted, thereby adjusting the first percentage of total energy supplied to the first electrode and the second percentage of total energy supplied to the second electrode.

[0048] In other features, the controller is configured to adjust the capacitance or inductance of the first circuit component while adjusting the first frequency to the second frequency.

[0049] In other features, the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value while adjusting the first frequency to the second frequency.

[0050] Other areas to which this disclosure may apply will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. [Brief explanation of the drawing]

[0051] This disclosure will be better understood from the detailed description and accompanying drawings.

[0052] [Figure 1] Figure 1 is a functional block diagram of an example of a substrate processing system incorporating a frequency controller, electrodes and a corresponding matching network, and one or more tuning circuits, according to one embodiment of the present disclosure.

[0053] [Figure 2] Figure 2 is a functional block diagram of an exemplary capacitive coupling circuit, including tuning circuits for clamp electrodes and bias electrodes, according to one embodiment of the present disclosure.

[0054] [Figure 3] Figure 3 is a functional block diagram of an example of a capacitive coupling circuit, including tuning circuits for two clamp electrodes and a bias electrode, according to one embodiment of the present disclosure.

[0055] [Figure 4] Figure 4 is a functional block diagram of an example of a capacitive coupling circuit, including a tuning circuit for a clamp electrode and two bias electrodes, according to one embodiment of the present disclosure.

[0056] [Figure 5] Figure 5 is a functional block diagram of an example of a capacitive coupling circuit, including a tuning circuit for a clamp electrode and three bias electrodes, according to one embodiment of the present disclosure.

[0057] [Figure 6] Figure 6 is a functional block diagram of an example of a tuning circuit for clamp electrodes and bias electrodes according to one embodiment of the present disclosure.

[0058] [Figure 7] Figure 7 is a schematic functional block diagram of an example of a tuning circuit according to one embodiment of the present disclosure, which is connected to a single RF power supply and includes two clamp electrodes and a series-connected inductor and capacitor for a bias electrode ring.

[0059] [Figure 8] Figure 8 is a schematic functional block diagram of an example of a tuning circuit according to one embodiment of the present disclosure, which is connected to a single RF power supply and includes two clamp electrodes and a shunt inductor and capacitor for a bias electrode ring.

[0060] [Figure 9] Figure 9 is a schematic functional block diagram of an example of a tuning circuit according to one embodiment of the present disclosure, which is connected to a dual RF power supply and includes a series-connected inductor and capacitor for two clamp electrodes and a bias electrode ring, as well as a shunt inductor and capacitor.

[0061] [Figure 10] Figure 10 is a schematic functional block diagram of an example of two tuning circuits according to one embodiment of the present disclosure, each connected to an RF power supply and including a series-connected inductor and capacitor for two clamp electrodes and a bias electrode ring, or a shunt inductor and capacitor.

[0062] [Figure 11] Figure 11 is a schematic functional block diagram of an example of a tuning circuit according to one embodiment of the present disclosure, which includes two clamp electrodes and parallel-connected capacitors and inductors for a bias electrode ring.

[0063] [Figure 12] Figure 12 shows a method for operating a substrate processing system according to one embodiment of the present disclosure, which includes setting and adjusting the RF generator frequency and impedance values ​​for the tuning circuit of the electrodes of an electrostatic chuck.

[0064] [Figure 13] Figure 13 shows an example of a substrate support including an outer ring electrode and two internal electrodes according to one embodiment of the present disclosure.

[0065] In these drawings, reference numbers may be reused to refer to similar and / or identical elements. [Modes for carrying out the invention]

[0066] In a capacitively coupled plasma (CCP) system, an RF voltage signal may be supplied to a showerhead and / or substrate support (e.g., an electrostatic chuck or pedestal) within the processing chamber to generate and maintain plasma (e.g., plasma provided during an etching or deposition process) during substrate processing. For example, the substrate support may include multiple electrodes for receiving the RF voltage. The electrodes may have different sizes and shapes and may be located at different locations within the substrate support.

[0067] Examples described herein include (i) a frequency controller for setting and adjusting the RF generator frequency, and (ii) a tuning circuit for controlling the RF voltage supplied to electrodes of a substrate support. The tuning circuit is distinct from a matching network connected between the RF generator and the tuning circuit. To clarify, the tuning circuit is not included in the matching network and is isolated from it. The frequency controller adjusts the RF generator frequency and adjusts the power distribution within and across the substrate support. The RF generator frequency is adjusted independently of impedance matching and / or minimization of reflected power. The frequency controller adjusts the frequency to effectively adjust the impedance of the tuning circuit, which affects power distribution and on-wafer processing. The disclosed frequency adjustments can be performed without directly changing the variable capacitance and inductance of the circuit components included in the tuning circuit, or can be performed in addition to directly adjusting the capacitance and inductance of the circuit components. In one embodiment, the change in RF generator frequency is within a predetermined frequency range in which no impedance mismatch occurs between the RF generator and the matching network. In another embodiment, the change in RF generator frequency exists over an operating frequency range that may cause one or more impedance mismatches between the RF generator and the matching network. In this latter embodiment, the matching network is configured to actively maintain impedance matching over the operating frequency range of the RF generator.

[0068] Adjusting the RF generator frequency to change the power distribution on the substrate support by adjusting the impedance of the tuning circuit is different from adjusting the RF generator frequency for impedance matching purposes. Adjusting the RF generator frequency can change the impedance of the matching network and match the impedance of the RF generator output. This is done without changing the power distribution on the substrate support and / or wafer uniformity. In contrast, adjusting the RF generator frequency to adjust power distribution and on-wafer processing may be done to provide or change wafer uniformity.

[0069] The tuning circuit includes variable and / or fixed impedances that can be tuned for the substrate processing being performed. The RF voltage and corresponding current supplied to the electrodes can be controlled to alter the characteristics of the generated plasma. During processing, the substrate is placed on a substrate support, and one or more layers of the substrate (e.g., film layers) can be etched or deposited, for example. By adjusting the RF voltage supplied to different electrodes, the parameters of one or more layers can be spatially varied and / or tuned across the wafer according to the electrode locations. For example, the parameters of one or more layers may include measured quantities such as uniformity values, stress values, refractive index, etching rate, deposition rate, thickness values, and / or other intrinsic property values.

[0070] RF power is disclosed as being provided from one or more RF power sources. In one embodiment, RF power is provided by supplying RF power to a common node from a single RF power source. The RF power is then supplied from the common node to different electrodes of a substrate support via respective paths. The paths include tuning circuits and / or impedances that vary the corresponding RF voltage, current level, phase, and / or frequency components. The impedances may include series-connected or shunt-connected impedances. Other embodiments including multiple power sources, multiple nodes, and various paths are disclosed herein.

[0071] The RF voltage and current levels supplied to the electrodes in the substrate support can also be varied by adjusting the size, shape, and pattern of the electrodes. For example, the RF voltage supplied to the plasma from annular and / or circular electrodes, the substrate processing performed using annular and / or circular electrodes, and / or the resulting substrate characteristics can be changed and / or tuned by changing the radius of the electrodes.

[0072] A substrate processing system may have multiple features, characteristics, and / or parameters that provide degrees of freedom and can be set and / or adjusted to control the resulting configuration of the substrate layers during processing. For example, RF power level, chamber shape, use of focusing rings, showerhead hole pattern, showerhead shape, electrode pattern, gas pressure, gas composition, etc., can be set and / or controlled to provide the target layer configuration and profile to the resulting substrate.

[0073] The disclosed examples provide another degree of freedom for tuning the profiles of one or more layers of a substrate. This degree of freedom is provided by setting and / or adjusting the impedance of the tuning circuit (e.g., selection, modification, and / or control of capacitance, inductance, reactance, resistance, layout, etc.). The profile refers to the aforementioned parameters of one or more layers.

[0074] The radial profile of a substrate can be altered, for example, by varying the metallic or dielectric annular elements near the circumferential edge of the substrate. This may involve adjusting parameters such as gas pressure, gas flow rate, gas composition, RF discharge power, frequency of the RF signal supplied to the electrodes of the substrate support, and / or other parameters. Varying these parameters at a particular location to provide a target layer characteristic (e.g., a specific layer thickness or shape at the circumferential edge) may alter other parameters and / or affect other characteristics at the same and / or other locations. Therefore, these parameters do not independently adjust a specific characteristic. As another example, the circumferential edge of a substrate can be altered by using a focusing ring located outside the circumferential edge of the substrate. However, the use of a focusing ring may affect the gas flow rate at the center of the substrate, which may affect the processing and therefore the results at the center of the substrate. Other exemplary layer characteristics include the depth or width of a particular trench, the distance between trenches, the distance between conductive elements, and the composition of the layer.

[0075] The more parameters and degrees of freedom there are in setting and controlling the tuning of the profiles of one or more layers of a substrate, the greater the likelihood of providing specific features without adversely affecting other features. Furthermore, as the number of parameters and degrees of freedom increase, the number, configurations, and layouts (or patterns) of features that can be formed also increase. The examples disclosed herein enhance the design flexibility of substrate layers and the selectivity of location-specific designs, enabling substrate processing systems to provide a diverse set of features.

[0076] Figure 1 shows a substrate processing system 100 incorporating an ESC (or substrate support) 101. The ESC refers to a substrate support including clamp electrodes to which a voltage is applied, generating an attractive force for clamping the substrate to the ESC. ESC 101 can be the same as or similarly configured as any of the ESCs disclosed herein. Although Figure 1 shows a capacitively coupled plasma (CCP) system, the embodiments disclosed herein are applicable to trans-coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems, as well as plasma sources including substrate supports. The embodiments are applicable to PVD processes, PECVD processes, chemically strengthened plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etching processes, and / or other etching, deposition, and cleaning processes.

[0077] ESC101 may include a top plate 102 and a base plate 103. Although ESC101 is shown as having two plates, ESC101 may also include a single plate. Plates 102, 103 may be formed of ceramic and / or other materials. ESCs in Figures 1-5 and 7-11 are each shown having certain features and lacking other features, but each ESC may be modified to include any of the features disclosed herein and in Figures 1-5 and 7-11.

[0078] Although ESC101 is shown mounted at the bottom of the processing chamber and not configured to rotate, ESC101 and other ESCs disclosed herein may be configured as spin chucks mounted at the bottom or top of the processing chamber and rotated during substrate processing. When mounted at the top of the processing chamber, ESC101 may have a configuration similar to that disclosed herein, but may be inverted and may include peripheral substrate holders, clamps, and / or clasp hardware.

[0079] The substrate processing system 100 includes a processing chamber 104. The ESC 101 is enclosed within the processing chamber 104. The processing chamber 104 also encloses other components, such as the upper electrode 105, and contains RF plasma. During operation, the substrate 107 is placed on the top plate 102 of the ESC 101 and is electrostatically clamped.

[0080] As just one example, the upper electrode 105 may include a showerhead 109 for introducing and distributing gas. The showerhead 109 may include a stem portion 111, one end of which is connected to the upper surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from the opposite end of the stem portion 111 at a location spaced apart from the upper surface of the processing chamber 104. The surface facing the substrate or the showerhead 109 includes holes through which process gas or purge gas can pass. Alternatively, the upper electrode 105 may include conductive plates, and the gas may be introduced in another manner. One or both of the plates 102, 103 can function as the lower electrode.

[0081] One or both of plates 102 and 103 may include a temperature control element (TCE). As an example, Figure 1 shows a top plate 102 that includes a TCE 110 and is used as a heating plate. An intermediate layer 114 is placed between plates 102 and 103. The intermediate layer 114 can bond the top plate 102 to the base plate 103. As an example, the intermediate layer may be formed of an adhesive material suitable for bonding the top plate 102 to the base plate 103. The base plate 103 may include one or more gas channels 115 and / or one or more coolant channels 116 for flowing backside gas to the back of the substrate 107 and for flowing coolant through the base plate 103.

[0082] The RF generation system 120 generates an RF voltage and outputs it to the upper electrode 105 and the lower electrode (e.g., one or more of plates 102, 103). One of the upper electrode 105 and ESC 101 can be DC grounded, AC grounded, or at a floating potential. In just one example, the RF generation system 120 may include one or more RF generators 122 (e.g., capacitively coupled plasma RF power generators, bias power generators, and / or other RF power generators) controlled by a system controller 121 that generate an RF voltage, which is supplied to the upper electrode 105 and / or ESC 101 by one or more matching and distribution networks 124. The system controller 121 includes a frequency controller 119 that sets and adjusts the frequency of the RF signals output from the RF generators 123, 125. The frequency can be adjusted to coordinate power distribution within and across ESC 101.

[0083] As an example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide an RF voltage or simply connect the showerhead 109 to the ground reference. The second RF generator 125 and the second RF matching network 129, individually or collectively referred to as power supplies, can provide an RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power to ionize the gas and drive the plasma. One of the RF generators 123, 125 may be a high-power RF generator that generates, for example, 6 to 10 kilowatts (kW) or more of power.

[0084] The second RF matching network 129 provides impedance matching such that the input to the second impedance matching network 129 matches the output impedance of the second RF generator 125. The second RF matching network 129 can (i) maintain fixed capacitance and inductance values ​​of the circuit components (e.g., capacitors and inductors) of the second RF matching network 129 that provide impedance matching over the operating frequency range of the RF generator 125, or (ii) adjust the capacitance and / or inductance values ​​of the impedance 128 of the matching network 129 to maintain impedance matching over the operating frequency range of the RF generator 125. This is done to minimize reflected power returning to the RF generator 125. The second impedance matching network 129 provides impedance matching independently of the frequency of the RF signal output from the second RF generator 125. The second RF matching network 129 includes impedances (e.g., capacitors and inductors) 128 that supply power to RF electrodes such as RF electrodes 131, 133 in plates 102, 103. The RF electrode can be positioned on one or both of plates 102 and 103. For example, when used as a clamp electrode, the RF electrode may be located near the top surface of ESC 101, and / or elsewhere on ESC 101 when used for RF biasing purposes. A portion of the electrode may be used as both a clamp electrode and an RF bias electrode.

[0085] The RF electrodes can receive power from other power sources. For example, some of the RF electrodes can receive power from a power source 135 instead of, or in addition to, receiving power from the second RF matching network 129. In one embodiment, the power source 135 does not include a matching network, and / or the matching network is not located between the power source 135 and the RF electrodes. Some of the RF electrodes receive power from the second RF matching network 129 and / or the power source 135, and can electrostatically clamp the substrate to the top plate 102. The power source 135 can be controlled by a system controller 121. A tuning circuit 139 may be connected (i) between the second RF matching network 129 and the corresponding electrodes 131, 133, 137, and (ii) between the power source 135 and the corresponding electrodes 131, 133, 137. In one embodiment, the tuning circuit 139 is located downstream from the second RF matching network 129 and outside the processing chamber 104. Examples of the tuning circuit 139 are shown in Figures 2 to 11.

[0086] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas source 132), where N is an integer greater than zero. The gas source 132 supplies one or more precursors and gas mixtures thereof. The gas source 132 may also supply etching gas, carrier gas, and / or purge gas. Vaporized precursors may also be used. The gas source 132 is connected to the manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively referred to as valve 134), as well as mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controller 136). The output of the manifold 140 is supplied to the processing chamber 104. As just one example, the output of the manifold 140 is supplied to the showerhead 109.

[0087] The substrate processing system 100 further includes a cooling system 141 which includes a temperature controller 142 which may be connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown separately from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or more of the plates 102, 103 may include multiple temperature control zones (for example, four zones, each containing four temperature sensors).

[0088] The temperature controller 142 can control the operation of the TCE 110, and therefore the temperature, and thus the temperature of the plates 102, 103 and the substrate (e.g., substrate 107). The temperature controller 142 and / or the system controller 121 can control the flow rate of backside gas (e.g., helium) to the gas channels 115 for cooling the substrate by controlling the flow from one or more of the gas sources 132 to the gas channels 115. The temperature controller 142 also communicates with the coolant assembly 146 and can control the flow of a first coolant (pressure and flow rate of the coolant fluid) through the channels 116. The first coolant assembly 146 can receive the coolant fluid from a reservoir (not shown). For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to flow coolant through the channels 116 to cool the base plate 103. The temperature controller 142 can control the rate at which the coolant flows and the temperature of the coolant. The temperature controller 142 controls the current supplied to the TCE 110, as well as the pressure and flow rate of the gas and / or coolant supplied to channels 115 and 116, based on parameters detected from sensors 143 and 144 in the processing chamber 104. Sensors 143 and 144 may include resistance thermometers, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. Sensors 143, 144, and / or other sensors included in the substrate processing system 100 may be used to detect parameters such as temperature, gas pressure, voltage, and current level. During the etching process, the substrate 107 may be heated to a predetermined temperature (e.g., 120 degrees Celsius (°C)) in the presence of a high-power plasma. The flow of gas and / or coolant through channels 115 and 116 lowers the temperature of the base plate 103, thereby lowering the temperature of the substrate 107 (e.g., cooling from 120°C to 80°C).

[0089] The reaction material can be discharged from the processing chamber 104 using valve 156 and pump 158. The system controller 121 can control the components of the substrate processing system 100, including controlling the supplied RF power level, the pressure and flow rate of the supplied gas, RF matching, etc. The system controller 121 controls the state of valve 156 and pump 158. The robot 170 can be used to feed substrates onto the ESC 101 and to remove substrates from the ESC 101. For example, the robot 170 can transfer substrates between the ESC 101 and the load lock 172. The robot 170 may be controlled by the system controller 121. The system controller 121 can control the operation of the load lock 172.

[0090] Valves, gas and / or coolant pumps, power supplies, RF generators, etc., are sometimes called actuators. TCEs, gas channels, coolant channels, etc., are sometimes called temperature control elements.

[0091] The system controller 121 can control the impedance state of the tuning circuit 139 directly or indirectly via the frequency controller 119 by adjusting the variable capacitance and / or inductance of the circuit components of the tuning circuit 139. The frequency controller 119 can control and / or command the RF generator 125 to output an RF signal having a frequency determined to adjust the impedance of the tuning circuit 139. Alternatively, or in addition to the frequency adjustments described, the system controller 121 can directly adjust the impedance of the tuning circuit 139 by sending a signal to the tuning circuit 139 and adjusting the capacitance and / or inductance values ​​of the capacitors and inductors of the tuning circuit 139. Examples of capacitors and inductors are shown in Figures 7 to 11. The impedance of the tuning circuit 139 can be adjusted based on feedback signals received from sensors 143, 144, 145, and / or other sensors in one or more of the ESC 101, processing chamber 104, second RF matching network 129, and / or power supplies 125, 135. Sensor 145 can detect voltage, current level, and power level in the second RF matching network 129. Sensor 144 is shown on the base plate 103, but one or more sensors may be located on the top plate 102. Sensor 144 can be located anywhere within the ESC 101. Sensor 143 can be located anywhere within the processing chamber 104.

[0092] The system controller 121 can also control the state of the impedance 128. The state of the impedance 128 can be set so that one or more impedances of one or more outputs of the second RF matching network 129 match the impedance found at the input of the tuning circuit 139. The impedance found at the input of the tuning circuit 139 is based on the impedances of the ESC 101 and the tuning circuit 139. When adjusting the impedance of the tuning circuit 139, the system controller 121 can also adjust the impedance of the second RF matching network 129 accordingly.

[0093] Figures 2 to 11, described below, show a specific number of tuning circuits, impedances, clamp electrodes, RF electrodes, and / or other elements, but any number of each can be included. Furthermore, the tuning circuits, impedances, clamp electrodes, and RF electrodes are shown in a specific arrangement and have specific sizes, shapes, and patterns, although the described elements may be in different arrangements and have different sizes, shapes, and patterns.

[0094] Figure 2 shows a capacitive coupling circuit 200 including a clamp tuning circuit 202, an RF tuning circuit 204, a clamp electrode 206, and an RF electrode 208. The impedances of the elements (e.g., capacitors and / or inductors) of the tuning circuits 202, 204 may be frequency-dependent. A cross-sectional view of the showerhead (or upper electrode) 210 and the ESC 212 is shown. The showerhead 210 can be connected to a reference potential or to ground 214. In one embodiment, the showerhead 210 is an RF powered by the first RF matching network 127 of Figure 1. Plasma 216 is provided between the showerhead 210 and the ESC 212. The substrate 218 is placed on the ESC 212.

[0095] The clamp tuning circuit 202 may be used to control the clamp voltage, current level, phase, power level, and / or frequency supplied to the clamp electrode 206. The RF tuning circuit 204 may be used to control the bias voltage, current level, power level, and / or frequency supplied to the RF electrode 208. The tuning circuits 202 and 204 receive power P from, for example, the second RF matching network 129 (or first power supply) and / or power supply 135 (or second power supply) in Figure 1. inner , P outer It can receive and use to adjust the voltage drop across the entire plasma. This may include adjusting the voltage difference between each pair of points on and across the surface of ESC101 in Figure 1. Examples of tuning circuits 202, 204 are shown in Figure 6. Tuning circuits 202, 204 may include one or more impedances, as shown in Figure 6. Tuning circuits 202, 204 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Exemplary parallel and series impedance paths are shown in Figure 6. Examples of impedances that may be included in tuning circuits 202, 204 are shown in Figures 7 to 11. Impedances may be connected in series or parallel, be shunt impedances, and / or include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements (or filters), and / or other impedances. For example, the clamp electrode 206 may be circular, and the RF electrode 208 may be annular.

[0096] Figure 3 shows a capacitive coupling circuit 300 including a first clamp tuning circuit 302, a second clamp tuning circuit 303, an external RF tuning circuit 304, a first clamp electrode 306, a second clamp electrode 307, and an RF electrode 308. The impedances of the elements (e.g., capacitors and / or inductors) of the tuning circuits 302, 303, and 304 may be frequency-dependent. A cross-sectional view of the showerhead (or upper electrode) 310 and the ESC 312 is shown. The showerhead 310 can be connected to a reference potential or to ground 314. In one embodiment, the showerhead 310 is an RF powered by the first RF matching network 127 of Figure 1. Plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is placed on the ESC 312.

[0097] Clamp tuning circuits 302, 303 may be used to control the clamp voltage, current level, power level, and / or frequency supplied to the clamp electrodes 306, 307. RF tuning circuit 304 may be used to control the bias voltage, current level, power level, and / or frequency supplied to the RF electrode 308. Tuning circuits 302, 303, and 304 receive power P from, for example, the second RF matching network 129 (or first power supply) in Figure 1, the power supply 135 (or second power supply) in Figure 1, and / or one or more other power supplies. clamp1 , P clamp2 , and P outer It can receive. Tuning circuits 302, 303, and 304 can be used to adjust the voltage drop across the entire plasma. In one embodiment, P clamp1 P clamp2It is equal to. Examples of tuning circuits 302, 303, and 304 are shown in Figure 6. Tuning circuits 302, 303, and 304 may include one or more impedances, as shown in Figure 6. Tuning circuits 302, 303, and 304 do not have to include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 302, 303, and 304 are shown in Figures 7 to 11. The impedances may be connected in series or in parallel, be shunt impedances, and / or include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements, and / or other impedances. For example, clamp electrodes 306 and 307 may be circular, and RF electrode 308 may be annular.

[0098] Figure 4 shows a capacitive coupling circuit 400 including a clamp tuning circuit 402, an internal RF tuning circuit 404, an external RF tuning circuit 405, a clamp electrode 406, an internal bias electrode 408, and an external bias electrode 409. The impedances of the elements (e.g., capacitors and / or inductors) of the tuning circuits 402, 404, and 405 may be frequency-dependent. A cross-sectional view of the showerhead (or upper electrode) 410 and the ESC 412 is shown. The showerhead 410 can be connected to a reference potential or to ground 414. In one embodiment, the showerhead 410 is an RF powered by the first RF matching network 127 of Figure 1. Plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is placed on the ESC 412.

[0099] The clamp tuning circuit 402 can be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 406. The RF tuning circuits 404, 405 may be used to control the bias voltage, current level, power level, and / or frequency provided to the bias electrodes 408, 409. The tuning circuits 402, 404, 405 can receive power P clamp , P inner , P outer from, for example, the second RF matching network 129 (or the first power source) of FIG. 1, the power source 135 (or the second power source) of FIG. 1, and / or one or more other power sources. The tuning circuits 402, 404, 405 can be used to adjust the voltage drop across the entire plasma. Examples of the tuning circuits 402, 404, 405 are shown in FIG. 6. The tuning circuits 402, 404, 405 can include one or more of the impedances as shown in FIG. 6. The tuning circuits 402, 404, 405 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that can be included in the tuning circuits 402, 404, 405 are shown in FIGS. 7-11. The impedances are connected in series or in parallel, are shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements and / or other impedances. By way of example, the clamp electrode 406 and the internal bias electrode 408 can be circular, and the external bias electrode 409 can be annular.

[0100] Figure 5 shows a capacitive coupling circuit 500 including a clamp tuning circuit 502, a first internal RF tuning circuit 504, a second internal tuning circuit 505, an external RF tuning circuit 506, a clamp electrode 507, a first internal bias electrode 508, a second internal bias electrode 509, and an external bias electrode 510. The impedances of the elements (e.g., capacitors and / or inductors) of the tuning circuits 502, 504, 505, and 506 may be frequency-dependent. A cross-sectional view of the showerhead (or upper electrode) 511 and the ESC 512 is shown. The showerhead 511 can be connected to a reference potential or to ground 514. In one embodiment, the showerhead 511 is an RF powered by the first RF matching network 127 of Figure 1. Plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is placed on the ESC 512.

[0101] The clamp tuning circuit 502 may be used to control the clamp voltage, current level, power level, and / or frequency supplied to the clamp electrode 507. The RF tuning circuits 504, 505, and 506 may be used to control the bias voltage, current level, phase, power level, and / or frequency supplied to the bias electrodes 508, 509, and 510. The tuning circuits 502, 504, 505, and 506 receive power P from, for example, the second RF matching network 129 (or first power supply) in Figure 1, the power supply 135 (or second power supply) in Figure 1, and / or one or more other power supplies. clamp , P inner1 , P inner2 , P outerIt can receive. Tuning circuits 502, 504, 505, and 506 can be used to adjust the voltage drop across the entire plasma. Examples of tuning circuits 502, 504, 505, and 506 are shown in Figure 6. Tuning circuits 502, 504, 505, and 506 may include one or more impedances, as shown in Figure 6. Tuning circuits 502, 504, 505, and 506 do not have to include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 502, 504, 505, and 506 are shown in Figures 7 to 11. Impedances may be connected in series or parallel, be shunt reactances, and / or include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements, and / or other impedances. For example, the clamp electrode 507 and bias electrodes 508, 509 may be circular, and the external bias electrode 510 may be annular.

[0102] Figure 6 shows a tuning circuit 600 for an electrode (or load) 602, such as a clamp electrode or bias electrode. Tuning circuit 600 can replace any of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506 in Figures 2-5. Examples of tuning circuit 600 are shown in Figures 9-10. Tuning circuit 600 can receive RF power from an RF power supply 604, such as one of the power supplies 129, 135 in Figure 1. RF power supply 604 may include a matching network and / or an RF generator such as the matching network 129 and RF generator 125. Tuning circuit 600 may include a series impedance path 605 with a series impedance set 606 and a parallel impedance path 607 with a parallel impedance set 608. The impedances of impedance sets 606, 608 may be frequency-dependent. The series impedance set 606 includes one or more impedances 609 connected in series between the RF power supply 604 and the load 602. The series impedance set 606 and the one or more impedances 609 are connected between the load 602 and the source terminal 610. The source terminal 610 is connected to the RF power supply 604. The parallel impedance set 608 is connected between (i) the source terminal 610 connected between the RF power supply 604 and the series impedance set 606 and (ii) the reference terminal or ground 612. The parallel impedance set 608 may include one or more impedances 613 connected in parallel between the source terminal 610 and the reference terminal 612.

[0103] One or more of the impedances 609, 613 may be fixed impedances. In addition, or instead, one or more of the impedances 609, 613 may be variable impedances, which can be adjusted by the system controller 121 in Figure 1, for example, based on the current processing recipe, current operating parameters, parameters measured and / or determined based on the output of one or more sensors (e.g., sensor 143 in Figure 1), and / or the features and / or characteristics of the processing system, ESC, and substrate.

[0104] Figures 7–11 below show specific impedances, but other impedances may be included. Impedances may include “stray” inductance from wires and / or other conductive circuit elements.

[0105] Figure 7 shows that the tuning circuit 700 may be connected to a single RF power supply 702. The tuning circuit 700 includes inductors L1-L3 and capacitors C1-C3 connected in series for two clamp electrodes 706, 708 and a bias electrode ring 710. The impedances of the inductors L1-L3 and capacitors C1-C3 are frequency-dependent. The RF power supply 702 can operate similarly to the power supplies 129, 135 in Figure 1 and may be connected to a reference terminal or ground 711. The RF power supply 702 may include a matching network and / or an RF generator such as the matching network 129 and RF generator 125. In one embodiment (referred to as a grounded pedestal configuration), the RF power supply 702 is not included, and capacitors C1-C3 are connected to ground 711.

[0106] Figure 7 shows cross-sectional views of electrodes 706, 708, and 710. Electrodes 706, 708, and 710 can be arranged concentrically. L1 and C1 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the first internal clamp electrode 706. L2 and C2 are connected in series between (i) the RF power supply 702 and the common (or source) terminal 712 and (ii) the central terminal 714 connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the second internal clamp electrode 708.

[0107] The inductors L1-L3 and capacitors C1-C3 may have fixed values ​​or may be variable devices controlled by the system controller 121 in Figure 1, as described above. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into the tuning circuit 700.

[0108] Figure 7 provides an example where power is supplied to a common node (or terminal) and then divided to supply power to multiple electrodes. The impedance of each path to each electrode may vary depending on the impedance (or series-connected inductance and capacitance) in the corresponding path.

[0109] Figure 8 shows that the tuning circuit 800 can be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1-L3 and shunt capacitors C1-C3 for two clamp electrodes 804, 806 and a bias electrode ring 808. The impedances of the shunt inductors L1-L3 and shunt capacitors C1-C3 are frequency-dependent. The RF power supply 802 can operate similarly to the power supplies 129, 135 in Figure 1 and can be connected to a reference terminal or ground 811. The RF power supply 802 may include a matching network and / or an RF generator such as the matching network 129 and RF generator 125. The RF power supply 802 is connected to a common (or source) terminal 812 which is connected to the clamp electrodes 804, 806 and the central terminal 814.

[0110] In one embodiment (referred to as the grounded pedestal configuration), the RF power supply 802 is not included, and terminal 812 is connected to ground 811. When terminal 812 is connected to ground 811, one or more series-connected impedances may be connected (i) between node 820 and ground 811, (ii) between node 822 and ground 811, and / or between node 824 and ground 811. The one or more series-connected impedances described may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is supplied to the corresponding showerhead.

[0111] Cross-sectional views of electrodes 804, 806, and 808 are shown. Electrodes 804, 806, and 808 may be arranged concentrically. L1 and C1 are connected in parallel between node (or first terminal) 820 and ground 811. First terminal 820 is connected between common terminal 812 and first clamp electrode 804. L2 and C2 are connected in parallel between node (or second terminal) 822 and ground 811. Second terminal 822 is connected between common terminal 812 and first clamp electrode 804. L3 and C3 are connected in parallel between node (or third terminal) 824 and ground 811. Third terminal 824 is connected between common terminal 812 and second clamp electrode 806.

[0112] The inductors L1-L3 and capacitors C1-C3 may have arbitrary and / or predetermined fixed values, or they may be variable devices controlled by the system controller 121 in Figure 1, as described above. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into the tuning circuit 800.

[0113] Figure 8 provides another example where power is supplied to a common node and then divided to supply power to multiple electrodes. The impedance of each path to each electrode may be varied by the shunt impedance (or shunt inductance and capacitance) connected to the corresponding path.

[0114] Figure 9 shows a tuning circuit 900 connected to dual RF power supplies 902, 904. The tuning circuit 900 includes series-connected inductors L1-L3 and capacitors C1-C3 for two clamp electrodes 906, 908 and bias electrode ring 910, as well as shunt inductors L4-L6 and capacitors C4-C6. The impedances of inductors L1-L6 and capacitors C1-C6 are frequency-dependent. RF power supplies 902, 904 can operate similarly to power supplies 129, 135 in Figure 1 and can be connected to a reference terminal or ground 911. RF power supplies 902, 904 may include a matching network and / or an RF generator such as the matching network 129 and RF generator 125. RF power supplies 902, 904 are connected to a common (or source) terminal 912 and can provide power at the same or different frequencies.

[0115] In one embodiment (referred to as a grounded pedestal configuration), RF power supplies 902, 904 are not included, and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series-connected impedances may be connected (i) between node 920 and ground 911, (ii) between node 922 and ground 911, and / or between node 924 and ground 911. The one or more series-connected impedances described may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is supplied to the corresponding showerhead.

[0116] Inductor L1 and capacitor C1 are connected in series between the common terminal 912 and the first clamp electrode 906. Inductor L2 and capacitor C2 are connected in series between the central terminal 914 and the common terminal 912. The central terminal is connected to two points on the bias electrode ring 910.

[0117] Cross-sectional views of electrodes 906, 908, and 910 are shown. Electrodes 906, 908, and 910 may be arranged concentrically. L4 and C4 are connected in parallel between node (or first terminal) 920 and ground 911. The first terminal 920 is connected between capacitor C1 and common terminal 912. L5 and C5 are connected in parallel between node (or second terminal) 922 and ground 911. The second terminal 922 is connected between capacitor C2 and common terminal 912. L6 and C6 are connected in parallel between node (or third terminal) 924 and ground 911. The third terminal 924 is connected between capacitor C3 and common terminal 912.

[0118] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values, or they may be variable devices controlled by the system controller 121 in Figure 1, as described above. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into the tuning circuit 900. L4-L6 and C4-C6 may be arbitrary networks that do not include inductors and / or capacitors.

[0119] Figure 10 shows that two tuning circuits 1000 and 1002 can be connected to their respective RF power supplies 1004 and 1006. The first tuning circuit 1000 includes series-connected inductors L1, L3 and capacitors C1, C3 for two clamp electrodes 1010 and 1012, as well as shunt inductors L4, L6 and capacitors C4, C6. The impedances of inductors L1-L6 and capacitors C1-C6 are frequency-dependent. The second tuning circuit 1002 includes series-connected inductor L2 and capacitor C2 for a bias electrode ring 1014, as well as shunt inductor L5 and capacitor C5. The RF power supplies 1004 and 1006 can operate similarly to the power supplies 129 and 135 in Figure 1 and can be connected to a reference terminal or ground 1016. The RF power supplies 1004 and 1006 may include a matching network and / or an RF generator such as the matching network 129 and RF generator 125. RF power supply 1004 is connected to a common (or source) terminal 1018, which is connected to C1, C3, C4, C6, L4, and L6. RF power supply 1006 is connected to a central terminal 1020 via C2 and L2. RF power supplies 1004 and 1006 can provide power at the same frequency or at different frequencies.

[0120] Inductor L1 and capacitor C1 are connected in series between the common terminal 1018 and the first clamp electrode 1010. Inductor L2 and capacitor C2 are connected in series between the central terminal 1020 and the RF power supply 1006. The central terminal 1020 is connected to two points on the bias electrode ring 1014.

[0121] Cross-sectional views of electrodes 1010, 1012, and 1014 are shown. Electrodes 1010, 1012, and 1014 may be arranged concentrically. L4 and C4 are connected in parallel between the first terminal 1030 and ground 1016. The first terminal 1030 is connected between capacitor C1 and common terminal 1018. L5 and C5 are connected in parallel between the second terminal 1032 and ground 1016. The second terminal 1032 is connected between capacitor C2 and common terminal 1018. L6 and C6 are connected in parallel between the third terminal 1034 and ground 1016. The third terminal 1034 is connected between capacitor C3 and common terminal 1018.

[0122] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values, or they may be variable devices controlled by the system controller 121 in Figure 1, as described above. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into the tuning circuit 1000. L4-L6 and C4-C6 may be arbitrary networks that do not include inductors and / or capacitors.

[0123] In one embodiment, the RF power supply 1004 is not included, and terminal 1018 is connected to ground 1016. In another embodiment, the RF power supply 1006 is not included, and terminal 1032 is connected to ground 1016. In yet another embodiment, neither the RF power supplies 1004 nor 1006 are included, and both terminals 1018 and 1032 are connected to ground 1016. When terminals 1018 and / or terminal 1032 are connected to ground 1016, one or more series-connected impedances may be connected (i) between node 1030 and ground 1016, (ii) between node 1034 and ground 1016, and / or between node 1032 and ground 1016. The one or more series-connected impedances described may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is supplied to a corresponding showerhead.

[0124] Figure 11 shows a tuning circuit 1100 including capacitors C1, C2 and inductors L1, L2 connected in parallel for two clamp electrodes 1102, 1104 and a bias electrode ring 1106. The impedances of inductors L1-L2 and capacitors C1-C2 are frequency-dependent. Electrodes 1102, 1104, and 1106 may be arranged concentrically. Capacitors C1 and C2 are connected in series (i) between clamp electrodes 1102, 1104 and (ii) between power supply terminals 1110, 1112. Inductors L1 and L2 are connected in parallel with capacitors C1 and C2, respectively, and in series (i) between clamp electrodes 1102, 1104 and (ii) between power supply terminals 1110, 1112. Center terminals 1114 and 1116 are connected between capacitors C1 and C2 and between inductors L1 and L2, respectively. The central terminals 1114 and 1116 are connected to (i) two points on the bias electrode ring 1106 and (ii) to a third (or central) power terminal 1118. The power terminals 1110 and 1112 are connected to the clamp electrodes 1102 and 1104, respectively. The power terminals 1110, 1112, and 1118 can be connected to their respective power sources, such as any of the power sources disclosed herein. In one embodiment, one or more of the power terminals 1110, 1112, and 1118 are not connected to an RF power source but are connected to a reference terminal or to ground.

[0125] The inductors L1-L2 and capacitors C1-C2 may have arbitrary and / or predetermined fixed values, or they may be variable devices controlled by the system controller 121 in Figure 1, as described above. Although inductors L1-L2 and capacitors C1-C2 are shown, other impedances may be incorporated into the tuning circuit 1100. The inductors L1-L2 and capacitors C1-C2 are coupling elements connected between electrodes, providing power to each electrode at multiple frequencies.

[0126] The tuning circuit 1100 can be used in combination with any of the circuits shown in Figures 3, 5, and 7 to 10. For example, capacitors C1 and C2 and inductors L1 and L2 may similarly be connected to electrodes 306, 307 and electrode ring 308 in Figure 3, electrodes 508, 509 and electrode ring 510 in Figure 5, electrodes 706, 708 and electrode ring 710 in Figure 7, electrodes 804, 806 and electrode ring 808 in Figure 8, electrodes 906, 908 and electrode ring 910 in Figure 9, and electrodes 1010, 1012 and electrode ring 1014 in Figure 10.

[0127] In the examples described in Figures 2 to 11, if power is supplied at multiple frequencies, the path to a given electrode may include a frequency-dependent filtering element that supplies power to that electrode at a specific frequency. The impedance described above may include a frequency-dependent filtering element. In addition, power supplied to different electrodes may be supplied by separate (or different) power supplies operating at the same or different frequencies, thereby supplying power at the same or different frequencies. Figures 9 to 10 show examples including multiple power supplies. Alternatively, one or more power supplies may not be included, and the corresponding terminals (e.g., terminals 912, 1018, 1032) may be connected to a reference terminal or to ground.

[0128] Figure 12 illustrates an exemplary method for operating a substrate processing system, which includes setting and adjusting the frequency of an RF-generated signal and optionally adjusting the capacitance and inductance values ​​of a tuning circuit for the electrodes of an electrostatic chuck. In one embodiment, the capacitors and inductors of the tuning circuit are kept at fixed values ​​while one or more frequencies are adjusted to adjust the spatial power distribution of the entire ESC (e.g., ESC101 in Figure 1). Spatial power distribution refers to the power distribution of the entire ESC. This may include distribution in the lateral, radial, axial, vertical, and azimuth directions. The following operations are primarily described with respect to the embodiments of Figures 1 to 11, but the operations can be readily modified to apply to other embodiments of the present disclosure. The operations may be performed iteratively. The operations may be performed, for example, by the system controller 121 and / or frequency controller 119 in Figure 1.

[0129] The method can begin at 1200. In 1202, the process to be performed is selected. Exemplary processes include cleaning, etching, deposition, and annealing processes. In 1204, a recipe including system operating parameters is determined for the selected process being performed. Exemplary system operating parameters include: gas pressure and flow rate; processing chamber temperature, ESC temperature, and substrate temperature; center frequency of the RF signal output from the RF generator and the corresponding frequency operating range; total power supplied to each set of one or more electrodes in each of the multiple zones of the electrode; RF bias voltage; clamp voltage; electrode voltage, current level, power level, and / or frequency, etc. For example, the frequency operating range may be ±5% or more of the center frequency. For example, the RF generator may have a center frequency of 13.56 megahertz (MHz), and during processing, the frequency of the RF signal output from the RF generator may be adjusted between 12.882 and 14.238 MHz. As another example, an RF generator may have a center frequency of 20 MHz, and during processing, the frequency of the RF signal output from the RF generator may be adjusted between 18 and 22 MHz. The frequency adjustment is not performed for impedance matching purposes to minimize reflected power, but rather during processing, for example, after the plasma has been struck and the power distribution in the ESC has been adjusted.

[0130] In 1206, the features and / or characteristics of the processing chamber, ESC, and substrate are determined. Illustrative features and characteristics include the shape value of the processing chamber, the configuration of the ESC, the heating and cooling characteristics of the ESC (e.g., heating and cooling rates), the size of the ESC, the configuration of the substrate, and the materials of the ESC and / or substrate. This may also include: the number of electrodes per zone; the number of zones; and the number of clamp electrodes, RF electrodes, and / or combinations of clamp electrodes and RF electrodes. Some of the electrodes in ESC101 can be used for both clamping and RF biasing purposes, thus providing both clamping voltage and RF bias voltage.

[0131] In 1208, system operating parameters may be set by the system controller 121 and / or the frequency controller 119. This may include controlling the operation of the actuators described above. In 1210, the impedance value of the tuning circuit is set based on the selected process, recipe, and system operating parameters. The impedance value may also, or alternatively, be set based on the features and / or characteristics of the processing chamber, ESC, and / or substrate. For example, a lookup table relating the impedance value to other parameters, features, and / or characteristics described herein may be stored in the memory of the system controller 121 and / or accessed by the system controller 121. The system controller 121 may also set the impedance 128 of the second RF matching network 129, as described above.

[0132] In 1212, a substrate may be placed on the ESC. This may include providing a clamping voltage for clamping the substrate to the ESC. In 1214, a processing operation is performed. Exemplary processing operations include cleaning, gas flow, plasma flow and impact, etching, deposition, annealing, post-annealing, and purging of the process chamber.

[0133] Operations 1216, 1218, 1220, and 1222 can be performed while operation 1212 is being performed. In 1216, sensor output signals, including sensor output data from the substrate processing system, are monitored. This may include receiving signals from sensors 143, 144, and 145 in Figure 1.

[0134] In 1218, the parameters may be determined based on sensor output signals, data and / or corresponding measurements from sensors 143, 144, 145 and / or other sensors, such as temperature, gas pressure, frequency, voltage, current level, and power level of the RF signal generated by the RF generator. The frequency can be adjusted while supplying the same amount of total power to the RF and / or clamp electrodes. Referring to Figure 7 as an example, the RF power supply 702 can provide RF signals with specific frequencies to electrodes 706, 708, and 710 via L1-L3 and C1-C3.

[0135] The power distribution to electrodes 706, 708, and 710 depends on the frequency and impedance values ​​of L1-L3 and C1-C3. The frequency of the RF signal can be adjusted to adjust the power distribution. By adjusting the frequency, the effective impedances of L1-L3 and C1-C3 change. The inductance and capacitance values ​​of L1-L3 and C1-C3 can be fixed or adjusted to adjust the power distribution. The amount of power distributed to electrodes 706, 708, and 710 may be the same or different depending on the frequency of the RF signal and the impedance values ​​of L1-L3 and C1-C3. In one embodiment, the total amount of power supplied to electrodes 706, 708, and 710 remains at a fixed level while the frequency and / or impedance, inductance, and / or capacitance of the RF signal supplied to the tuning circuit change.

[0136] In 1220, the system controller 121 and / or frequency controller 119 can determine whether to adjust the frequency of the RF generated signal, the impedance value of the tuning circuit, and / or the capacitance and inductance values ​​of the tuning circuit, based on measured and / or determined parameters. In one embodiment, a target impedance value is determined, and then the frequency is set based on the target impedance value. The capacitance and inductance values ​​of the capacitors and inductors of the tuning circuit can be adjusted based on the target impedance value and the set frequency. These decisions can be based on the selected process, recipe, system operating parameters, and / or the features and / or characteristics of the processing chamber, ESC, and / or substrate. The characteristics may be changed dynamically. In one embodiment, the impedance value is adjusted to follow a predetermined trajectory based on the change in characteristics. The predetermined trajectory may be, for example, a predetermined curve stored in memory. A table relating the impedance value to other values ​​and parameters can be stored in memory. If one or more impedance values ​​are changed, operation 1222 may be performed; otherwise, operation 1216 may be performed. In one embodiment, the power supplied to one or more electrodes is modulated by changing the corresponding impedance value. This can be done to change the substrate's stress, thickness, uniformity, refractive index, etching rate, deposition rate, and / or other inherent values ​​and / or profile parameters.

[0137] In operation 1222, the system controller 121 adjusts one or more impedance values ​​of the tuning circuit, for example, by changing the inductance, capacitance, impedance, and / or resistance of one or more capacitors and inductors of the tuning circuit. The adjustment (or amount of adjustment) may be based on measured and / or determined parameters, selected processes, recipes, system operating parameters, and / or features and / or characteristics of the processing chamber, ESC, and / or substrate. The system controller 121 may also adjust the impedance 128 of the second RF matching network 129, as described above. Operation 1216 may be performed following operation 1222.

[0138] At 1224, the system controller 121 decides whether to modify the current process or execute a different process. Operation 1202 may be performed if the current process is modified or another process is executed. If the current process is not modified and no further processes are executed, the method may terminate at 1226.

[0139] The actions described above are illustrative examples. Actions may be performed sequentially, synchronously, simultaneously, or consecutively, during overlapping periods or in different orders depending on the application. Furthermore, depending on the embodiment and / or the sequence of events, none of the actions may be performed or may not be skipped.

[0140] Figure 13 shows an example of an ESC (or substrate support) 1300 including an outer ring electrode 1302 and two internal electrodes 1304, 1306. Electrodes 1302, 1304, 1306 are provided as examples of two internal electrodes and an outer ring electrode, as shown in Figures 3, 5, and 7-11. The internal electrodes 1304, 1306 are "D" shaped electrodes and may be positioned radially inward of the outer ring electrode 1302. Gaps 1308 and 1310 exist between the internal electrodes 1304, 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linearly shaped central member 1312 extending between the internal electrodes 1304, 1306. Gaps 1314 and 1316 may exist between the internal electrodes 1304, 1306 and the central member 1312. The central member 1312 extends through the central region 1320 of the outer ring 1311 between the internal electrodes 1304 and 1306, and equally branches the central region 1320. In one embodiment, power is supplied to the outer ring electrode 1302 located at the center of the central member 1312. Power can also be supplied to the portion of the internal electrodes 1304 and 1306 near the center of the central member 1312.

[0141] The above examples provide RF tuning systems for indirectly and directly adjusting the impedance of a tuning circuit to change the power distribution to electrodes in an ESC. The power distribution can be changed quickly and significantly using frequency tuning in the RF generator, which affects the on-wafer process results. The RF tuning system can implement power modulation to electrodes through frequency tuning and / or direct physical adjustment of the impedance of the tuning circuit. The use of frequency tuning in combination with direct impedance adjustment can increase the tuning range and / or improve tuning accuracy. The tuning circuit has an impedance for setting and adjusting the parameters of electrodes in an electrostatic chuck and / or other pedestal (or substrate support). The pedestal does not have to be an electrostatic chuck. This provides spatial tuning of the power supplied to the plasma in a processing chamber (e.g., a PECVD reactor). The examples provide novel control parameters for film deposition and uniformity. In examples including external annular electrodes and internal circular electrodes, the relative intensity of the plasma around the periphery of the substrate can be changed by modulating the power supplied to the electrodes. This can be achieved by modulating (or adjusting) the corresponding impedance, as described above. Unlike changing gas parameters or overall power, modulating the power supplied to the electrodes can alter a selected area of ​​the substrate film (e.g., the circumferential edge of the substrate film) rather than altering an overall parameter that affects the entire substrate. This differs from conventional techniques, which involve the use of metal or dielectric rings to alter the outer portion of the plasma, and can result in fluctuations in the gas flow, which in turn have an overall effect that alters more of the substrate film than just the circumferential edge of the film.

[0142] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use in any way. The broad teachings of this Disclosure can be implemented in various forms. Thus, while this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent when considering the drawings, specification, and the claims below. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, while each embodiment is described above as having specific features, it is possible to implement one or more of these features described in relation to any embodiment of this Disclosure in other embodiments and / or combine them with any feature of any other embodiment (even if such combinations are not explicitly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one or more is within the scope of this Disclosure.

[0143] The spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upwards,” “below,” and “positioned.” Furthermore, when a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly described as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the expression “at least one of A, B, and C” should be interpreted in the sense of logic (A or B or C) using non-exclusive logic OR, and not in the sense of “at least one of A, at least one of B, and at least one of C.”

[0144] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment comprising one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes may include supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator settings, setting RF matching circuit settings, setting frequency, setting flow rate, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools, and loading and unloading wafers to and from other transport tools and / or load locks connected to or interlocked with a particular system.

[0145] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0146] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools to which the controller is configured to interact or control. Therefore, as described above, the controller may be distributed, for example, by including one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0147] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0148] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.

Claims

1. A substrate processing system, A matched network, which receives a first radio frequency signal having a first frequency from a radio frequency generator, and is configured to impedance match the input of the matched network to the output of the radio frequency generator, Unlike the matching network, the first tuning circuit comprises a first circuit component having a first impedance, wherein the first tuning circuit is configured to receive the output of the matching network and output a second radio frequency signal to a first electrode on a substrate support, A controller configured to determine a target impedance for the first circuit component, send a signal to the radio frequency generator based on the target impedance to adjust the first frequency of the first radio frequency signal received in the matching network to a second frequency, and change the first impedance of the first circuit component to match the target impedance. A substrate processing system comprising:

2. A substrate processing system according to claim 1, The radio frequency generator having a center frequency is further configured to generate the first radio frequency signal having the first frequency based on a control signal, The controller is configured to generate the control signal, The first frequency is within a predetermined range of the center frequency. PCB processing system.

3. A substrate processing system according to claim 1, The matching network is a substrate processing system that provides the first radio frequency signal to the first tuning circuit without changing the first frequency of the first radio frequency signal.

4. A substrate processing system according to claim 1, A substrate processing system wherein the controller is configured to adjust the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator.

5. A substrate processing system according to claim 1, A substrate processing system wherein the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

6. A substrate processing system according to claim 1, A substrate processing system wherein the matching network is configured to maintain impedance matching between the input of the matching network and the output of the radio frequency generator while the controller adjusts the first frequency to the second frequency.

7. A substrate processing system according to claim 1, The first tuning circuit comprises the first circuit component and the second circuit component, The first circuit component is connected to the first electrode, The second circuit component is connected to the second electrode on the substrate support, The controller is configured to adjust the first frequency to the second frequency, adjust the first impedance of the first circuit component and the second impedance of the second circuit component, and change the power distribution from the first tuning circuit to the first electrode and the second electrode. PCB processing system.

8. A substrate processing system according to claim 1, A substrate processing system in which the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal.

9. A substrate processing system according to claim 1, A substrate processing system wherein the controller is configured to adjust the capacitance or inductance of the first circuit component, in addition to adjusting the first frequency to the second frequency when the first impedance is changed to match the target impedance.

10. A substrate processing system according to claim 1, A substrate processing system wherein the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value while adjusting the first impedance.

11. A substrate processing system according to claim 1, The first tuning circuit distributes the total amount of power received from the matching network to the first and second circuit components. The controller is configured to adjust the first frequency to the second frequency and to adjust the first portion of the total power supplied to the first circuit component and the second portion of the total power supplied to the second circuit component. PCB processing system.

12. A substrate processing system according to claim 1, Source terminal and The substrate support comprising the first electrode and the second electrode, wherein the first electrode and the second electrode receive power from the matching network via the source terminal and Furthermore, The first tuning circuit described above is A first impedance set connected in series between the first electrode and the matching network, wherein the first impedance set receives the second radio frequency signal from the matching network via the source terminal, or A second impedance set connected between the output of the matching network and a reference terminal, wherein the second impedance set receives the second radio frequency signal from the matching network via the source terminal. comprising at least one of the following: PCB processing system.

13. A substrate processing system according to claim 12, The device further comprises a second tuning circuit, a third tuning circuit, and a third electrode. The first tuning circuit is connected to the first electrode and modifies the output of the matching network and generates the second radio frequency signal. The second tuning circuit is connected to the second electrode and configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode. The third tuning circuit is connected to the third electrode and configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode. PCB processing system.

14. A substrate processing system according to claim 1, A substrate processing system in which the first circuit component is connected to the first electrode and the second electrode on the substrate support and affects the power distribution to the first electrode and the second electrode.

15. A substrate processing system, A matched network, which receives a first radio frequency signal having a first frequency from a radio frequency generator, and is configured to impedance match the input of the matched network to the output of the radio frequency generator, A tuning circuit different from the matching network, wherein the tuning circuit is configured to output a second radio frequency signal to a first electrode on a substrate support and a third radio frequency signal to a second electrode on the substrate support, based on the output of the matching network. A controller configured to adjust the power distribution to the first electrode and the second electrode in the substrate support by sending a signal to the radio frequency generator and adjusting the first frequency of the first radio frequency signal received in the matching network to a second frequency, and A substrate processing system comprising:

16. A substrate processing system according to claim 15, The matching network is a substrate processing system that provides the first radio frequency signal to the tuning circuit without changing the first frequency of the first radio frequency signal.

17. A substrate processing system according to claim 15, A substrate processing system wherein the controller is configured to adjust the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator.

18. A substrate processing system according to claim 15, A substrate processing system wherein the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

19. A substrate processing system according to claim 15, A substrate processing system wherein the matching network is configured to maintain impedance matching between the input of the matching network and the output of the radio frequency generator while the controller adjusts the first frequency to the second frequency.

20. A substrate processing system according to claim 15, The tuning circuit includes a first circuit component and a second circuit component, The first circuit component is connected to the first electrode, The second circuit component is connected to the second electrode, When the first frequency is adjusted to the second frequency, the first impedance of the first circuit component and the second impedance of the second circuit component are changed. PCB processing system.

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