Package structure

Abstract

The present invention provides a package structure that includes a light-transmitting sheet, an annular support layer, and a substrate, while meeting the requirements for miniaturization and having low light transmittance and anti-glare function. [Solution] In the package structure, the annular support layer 102 is placed on the lower surface of the light-transmitting sheet 101 and has an upper surface facing the light-transmitting sheet, a lower surface opposite the upper surface, an inner surface, and an outer surface opposite the inner surface. The light-transmitting sheet and the annular support layer are placed on the substrate to form a sealing space. The annular support layer has a height T (μm) and a width L at T / 2. A The particle size is 8-400 μm, and the ratio is 0.05 ≤ T / L. A The value is ≤25. When the annular support layer is characterized by ultraviolet-visible spectroscopy along the direction perpendicular to the upper and lower surfaces of the annular support layer, the obtained spectrum is the absorbance A at 355 nm. 355 It has and 0.003 355 / T ≤ 0.03.​

Description

[Technical Field]

[0001] This application claims the interests of China Patent Application No. 202411867180.3, filed on 18 December 2024, and Taiwan Patent Application No. 113149451, filed on 18 December 2024, the subject matter thereof incorporated herein in its entirety by reference.

[0002] The present invention provides a package structure, in particular a package structure having low light transmittance and anti-glare function. The package structure of the present invention is applicable to semiconductor device packages, especially sensor chip packages. [Background technology]

[0003] CMOS (Complementary Metal-Oxide-Semiconductor) image sensors are semiconductor devices used to capture digital images. Due to their advantages such as high resolution, high speed, and low-light performance, they are widely used in various fields that require image capture, including smartphones, digital cameras, webcams, surround view systems, and advanced driver-assistance systems (ADAS).

[0004] Generally, the package structure of a CMOS image sensor involves a glass plate being placed on the sensor chip via ribs formed by curing a photosensitive resin layer or adhesive. These ribs are positioned around the sensing area of ​​the sensor chip. However, light passing through the glass plate can be partially reflected by the ribs, affecting the sensing area and potentially causing glare problems. This glare problem poses a significant safety risk in automotive applications such as surround view systems and advanced driver-assistance systems. Therefore, there is an urgent need for package structures with low light transmittance and anti-glare functionality.

[0005] Furthermore, as the CMOS image sensor is miniaturized, the package structure must also be miniaturized. As a result, the materials used in the package structure are required to have a high aspect ratio, strong adhesiveness, and high precision.

Summary of the Invention

Problems to be Solved by the Invention

[0006] In view of the above technical problems, an object of the present invention is to provide a package structure that satisfies the requirement of miniaturization and has a low light transmittance and an anti-glare function.

Means for Solving the Problems

[0007] Therefore, the object of the present invention is a light-transmissive sheet having an upper surface and a lower surface, an annular support layer disposed on the lower surface of the light-transmissive sheet, having an upper surface facing the light-transmissive sheet, a lower surface opposite to the upper surface, an inner surface, and an outer surface opposite to the inner surface, a base material, and the light-transmissive sheet and the annular support layer are disposed with the lower surface of the annular support layer on the base material to form a sealed space, the annular support layer has a height T (μm) along a direction perpendicular to the light-transmissive sheet, and a corresponding width L at T / 2 A having a width L A in the range of 8 μm to 400 μm, and 0.05 ≦ T / L A ≦ 25, preferably 0.4 ≦ T / L A ≦ 3, and when the annular support layer is characterized and evaluated by ultraviolet-visible spectroscopy along a direction perpendicular to the upper and lower surfaces of the annular support layer, the obtained spectrum has an absorbance A at 355 nm 355 having, and 0.003 < A 355 / T ≦ 0.03, to provide a package structure.

[0008] In one embodiment of the present invention, the annular support layer has a transmittance TT for light with a wavelength of 550 nm 550is 50% or less, and the transmittance TT 550 is measured in a state where the incident light direction is perpendicular to the upper and lower surfaces of the annular support layer.

[0009] In one embodiment of the present invention, the spectrum has at least one point within the wavelength range of more than 450 nm and 780 nm or less, where the first derivative is equal to 0 and the second derivative is less than 0. Each of the points is independently A w1 / T value, w1 represents the corresponding wavelength of the point, and A w1 represents the corresponding absorbance, and 0.003 ≤ A w1 / T.

[0010] In one embodiment of the present invention, the annular support layer has a width L1 (μm) on the lower surface of the annular support layer and a width L2 (μm) on the upper surface of the annular support layer. L1 is not equal to L2, and the width L2 may be larger or smaller than the width L1.

[0011] In one embodiment of the present invention, the inner surface of the annular support layer is a scattering surface that scatters incident light.

[0012] In one embodiment of the present invention, the light-transmissive sheet is a glass sheet.

[0013] In one embodiment of the present invention, the substrate is a silicon-containing substrate.

[0014] In one embodiment of the present invention, the package structure further includes a sensor chip, and the sensor chip is electrically connected to the substrate and disposed within the sealing space.

Brief Description of the Drawings

[0015] [Figure 1] It is a schematic cross-sectional view of an embodiment of the package structure of the present invention. [Figure 2] It is a schematic cross-sectional view of an embodiment of the package structure of the present invention. [Figure 3] It is a schematic cross-sectional view of an embodiment of the package structure of the present invention. [Modes for carrying out the invention]

[0016] Several embodiments of the present invention will be described in detail below. However, the present invention can be implemented in various embodiments and is not limited to those described herein.

[0017] Unless otherwise stated, expressions such as "a" and "the" used in this specification and the claims include both singular and plural forms.

[0018] Unless otherwise specified, in this specification and the claims, when an element is described as being "on" another element, this includes cases where the element is directly positioned on top of the other element, as well as cases where there is an intervening element between the two elements.

[0019] In this specification and in the claims, expressions such as “First,” “Second,” etc., are used solely to distinguish between the illustrated elements or components, unless otherwise specified, and have no special meaning. These expressions are not used to indicate priority.

[0020] The advantages of the present invention over the prior art lie, in particular, in that by controlling the absorbance of the support layer of the package structure to light of a specific wavelength, high adhesion and high precision (with respect to the cross-sectional shape of the pattern) can be obtained for the support layer, and the package structure is given low light transmittance and anti-glare function. Details of the package structure of the present invention and its applications will be described later.

[0021] 1. Package structure Figure 1 is a schematic cross-sectional view showing one embodiment of the package structure of the present invention. As shown in Figure 1, the package structure of the present invention includes a light-transmitting sheet 101, an annular support layer 102, and a substrate 103. The annular support layer 102 is placed on the lower surface of the light-transmitting sheet 101, and the light-transmitting sheet 101 and the annular support layer 102 form a sealing space by placing the lower surface of the annular support layer on the substrate. A sensor chip 104 electrically connected to the substrate is sealed within this sealing space. Examples of the sensor chip 104 include, but are not limited to, an image sensor chip, and more specifically, a CMOS image sensor chip.

[0022] As shown in Figure 1, the package structure may further include a package body 105 formed on a substrate, and the sensor chip 104 and annular support layer 102 are embedded within the package body 105, thereby protecting the sensor chip 104 from the effects of environmental factors (e.g., dust, moisture, chemicals, mechanical shock). The material of the package body 105 is not particularly limited and may be, for example, a cured resin, but the present invention is not limited thereto.

[0023] 1.1. Light-transmitting sheet The material of the light-transmitting sheet 101 is not particularly limited and can be any material that can transmit light of the target wavelength (e.g., visible light) to reach the sensor chip 104. Examples of materials for the light-transmitting sheet 101 include, but are not limited to, glass, crystalline inorganic materials, and non-photosensitive resin materials. Examples of non-photosensitive resin materials include, but are not limited to, transparent plastic materials. In one embodiment of the present invention, the light-transmitting sheet is a glass sheet, and examples include low-alkali glass sheets, alkali-free glass sheets, quartz glass sheets, and borosilicate glass sheets. The thickness of the glass sheet may be, for example, 50 μm to 2000 μm.

[0024] The light-transmitting sheet 101 has a lower surface facing the annular support layer 102 and an upper surface opposite to the lower surface. As shown in Figure 2, in one embodiment of the present invention, the lower surface of the light-transmitting sheet is further provided with an annular roughened area 1011 that conforms to the shape of the annular support layer, and the setting range does not cover the area of ​​the light-transmitting sheet located directly above the sensing area 1041 of the sensor chip 104. The annular roughened area 1011 scatters the light passing through the light-transmitting sheet 101, thereby preventing the light from being reflected back to the sensing area 1041 of the sensor chip and further reducing glare generated within the package structure. The roughness of the annular roughened area 1011 is not particularly limited as long as the desired scattering effect is obtained.

[0025] 1.2. Ring-shaped support layer 1.2.1.Structural properties

[0026] The annular support layer 102 is positioned on the lower surface of the light-transmitting sheet 101 and has an upper surface facing the light-transmitting sheet, a lower surface opposite the upper surface, an inner surface, and an outer surface opposite the inner surface, with the inner surface facing the sealing space. The outer surface of the annular support layer 102 may be roughened or have a surface microstructure (e.g., a sawtooth microstructure) to improve adhesion with the package body 105. The inner surface of the annular support layer 102 may also be roughened or have a surface microstructure (e.g., a sawtooth microstructure) to have a light-scattering surface function. This causes light irradiated onto the inner surface to scatter. This scattering prevents light from being reflected to the sensing area 1041 of the sensor chip 104, further reducing glare generated within the package structure.

[0027] The annular support layer 102 has an annular structure. The term "annular" can be any shape that conforms to the shape of the object to be sealed, and examples include, but are not limited to, a circular ring, an elliptical ring, a rectangular ring, and a polygonal ring other than a rectangular ring.

[0028] As shown in Figure 1, in the package structure of the present invention, the annular support layer has a height T (μm) along the direction perpendicular to the light-transmitting sheet, and a corresponding width L at T / 2. AIt has a width L. A The range is 8 μm to 400 μm, and 0.05 ≤ T / L A ≤25, preferably 0.4 ≤T / L A The limit is 3. For example, width L A This may be within the range of 8 μm, 10 μm, 20 μm, 50 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm, 220 μm, 230 μm, 240 μm, 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, 360 μm, 370 μm, 380 μm, 390 μm, or 400 μm, or any two values ​​between which specified. T / L A This may be within the range of 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, or 25, or any two values ​​listed herein.

[0029] The annular support layer may have a uniform or non-uniform thickness along the direction of height T. For example, the annular support layer may have a thickness that increases or decreases along the direction of height T, or the annular support layer may have a thickness that first increases and then decreases, or first decreases and then increases along the direction of height T. In one embodiment of the present invention, the annular support layer has a width L1 (μm) on the lower surface of the annular support layer and a width L2 (μm) on the upper surface of the annular support layer, where L1 is not equal to L2.

[0030] 1.2.2. Light Absorption Characteristics [A 355 / T] In the present invention, when the annular support layer 102 is characterized by ultraviolet-visible spectroscopy along a direction perpendicular to the upper and lower surfaces of the annular support layer, the obtained spectrum is the absorbance A at 355 nm. 355 It has and 0.003 355 / T ≤ 0.03. For example, A 355 The values ​​of / T are 0.0035, 0.004, 0.0045, 0.005, 0.0055, 0.006, 0.0065, 0.007, 0.0075, 0.008, 0.0085, 0.009, 0.0095, 0.01, 0.0105, 0.011, 0.0115, 0.012, 0.0125, 0.013, 0.0135, 0.014, 0.0145, 0.015, 0.0155, 0.016, 0.0165, 0.017, 0.0175, 0.018, 0.0185, 0.019, 0.0195, 0.02, 0.0205, 0.021, 0.0215, 0.022, 0.0225, 0.023, 0.0235, 0.024, 0.0245, 0.025, 0.0255, 0.026, 0.0265, 0.027, 0.0275, 0.028, 0.0285, 0.029, 0.0295, or 0.03, or within the range of any two values ​​described herein. A of the annular support layer 355 When the value of / T falls within the above range, it exhibits particularly high adhesion.

[0031] [TT 550 ] In one preferred embodiment of the present invention, 0.003 355 In addition to satisfying the condition / T ≤ 0.03, the annular support layer has a transmittance TT for light with a wavelength of 550 nm. 550 The transmittance TT of the annular support layer for light with a wavelength of 550 nm is 50% or less, preferably 36% or less. 550 The transmittance may be within the range of 50%, 45%, 42%, 40%, 38%, 36%, 35%, 34%, 32%, 30%, 28%, 26%, 25%, 24%, 22%, 20%, 18%, 16%, 15%, 14%, 12%, 10%, 8%, 6%, 5%, 4%, 2%, 1%, or any two values ​​listed herein. The above transmittances are measured in the direction of incident light perpendicular to the upper and lower surfaces of the annular support layer. ​​

[0032] [A w1 / T] In one preferred embodiment of the present invention, the annular support layer is characterized by ultraviolet-visible spectroscopy, and has a coefficient of 0.003 355 In addition to satisfying the condition / T ≤ 0.03, the resulting spectrum has at least one point within the first wavelength range where the first derivative is equal to 0 and the second derivative is less than 0. That is, the resulting spectrum has at least one absorption peak within the first wavelength range. Each of the aforementioned points is independently A w1 / T value, where w1 represents the corresponding wavelength at that point, A w1 This represents the corresponding absorbance, where 0.003 ≤ A w1 The value is / T. The first wavelength range is from 450 nm to 780 nm, and especially from 480 nm to 730 nm. A w1 The relationship between and height T (unit: μm) is 0.003 ≤ A w1 Satisfying / T, preferably 0.003 ≤ A w1 / T ≤ 0.08, more preferably 0.003 ≤ A w1 / T ≤ 0.03 is satisfied. For example, A w1 The values ​​of / T are 0.0035, 0.004, 0.0045, 0.005, 0.0055, 0.006, 0.0065, 0.007, 0.0075, 0.008, 0.0085, 0.009, 0.0095, 0.01, 0.0105, 0.011, 0.0115, 0.012, 0.0125, 0.013, 0.0135, 0.014, 0.0145, 0.015, 0.0155, 0.016, 0.0165, 0.017, 0.0175, The values ​​may be within the range of 0.018, 0.0185, 0.019, 0.0195, 0.02, 0.0205, 0.021, 0.0215, 0.022, 0.0225, 0.023, 0.0235, 0.024, 0.0245, 0.025, 0.0255, 0.026, 0.0265, 0.027, 0.0275, 0.028, 0.0285, 0.029, 0.0295, or 0.03, or any two values ​​listed herein. Within the above preferred range, it is possible to achieve both low light transmittance and anti-glare effect while minimizing the impact on the adhesion of the annular support layer. ​

[0033] [A 450 / T] In one preferred embodiment of the present invention, the annular support layer is characterized by ultraviolet-visible spectroscopy, and has a coefficient of 0.003 355 / T ≤ 0.03 and 0.003 ≤ A w1 In addition to satisfying the / T condition, there is no light absorption at 450 nm, substantially no light absorption, or very little light absorption. Specifically, when the annular support layer is characterized by ultraviolet-visible spectroscopy, the resulting spectrum is such that the absorbance A at 450 nm is satisfied. 450 It has A 450 The relationship between and height T (unit: μm) is 0 ≤ A 450 / T ≤ 0.0035, preferably 0 ≤ A 450 / T ≤ 0.0025 is satisfied. For example, A 450 / T may be in the range of 0, 0.0005, 0.001, 0.0015, 0.002, or 0.0025, or any two values ​​listed herein. Within the above preferred range, the adhesion and pattern accuracy of the annular support layer can be improved.

[0034] [A w2 / T] In one preferred embodiment of the present invention, the annular support layer is characterized by ultraviolet-visible spectroscopy, and has a coefficient of 0.003 355 In addition to satisfying the condition / T ≤ 0.03, the spectrum must be within the first wavelength range of over 480 nm and under 730 nm, and 0.003 ≤ A w1 It possesses the aforementioned technical characteristics of / T, and has no, virtually no, or very little light absorption in the second wavelength range. The second wavelength range is 440 nm to 470 nm. Specifically, when the annular support layer is characterized by ultraviolet-visible spectroscopy, the absorbance of the spectrum at each wavelength in the second wavelength range is independently A w2 It can be expressed as, 0≦A w2 The condition / T ≤ 0.0035 is satisfied. Here, w2 represents the wavelength of the corresponding absorbance. For example, A w2 ​​ / T may independently be within the range of 0, 0.0005, 0.001, 0.0015, 0.002, 0.0025, or 0.003, or any two values ​​described herein. Within the above preferred range, the adhesion and pattern accuracy of the annular support layer can be improved.

[0035] In the present invention, the above ultraviolet-visible spectroscopy is measured using an ultraviolet-visible spectrophotometer under the following conditions: The annular support layer is positioned such that its upper and lower surfaces are perpendicular to the direction of the incident light. That is, the incident light travels along a direction perpendicular to the upper and lower surfaces of the annular support layer. The diffraction grating is configured as an optical splitter. The test temperature is 25°C, the test pressure is 1 atm, and the analysis mode is absorbance. The scanning wavelength range is 190 nm to 1100 nm, the blank sample is air, and the scanning speed is 2200 nm / min. The switch wavelength at which the light source switches from a deuterium lamp to a tungsten lamp is 340.8 nm, the sampling interval is 0.2 nm, and the slit width is 2.0 nm. Under the above test conditions, the annular support layer sample used for analysis is obtained by cutting the annular support layer into 5 cm × 3 cm pieces at any position in the transverse (TD) and mechanical (MD) directions. To accurately measure the absorbance of the annular support layer, it is necessary to position the annular support layer so that its upper and lower surfaces are perpendicular to the direction of the incident light. The wavelength of the tungsten lamp used as the incident light source was 340.8 nm. The "sampling interval" means that data points are acquired every 0.2 nm within the scanning wavelength range of 190 nm to 1100 nm, and the values ​​are recorded.

[0036] The light absorption properties of the annular support layer can be adjusted by adjusting the composition and process conditions. For example, when preparing an annular support layer using a photosensitive resin film, as shown in the following examples, the composition of the photosensitive resin film can be adjusted by selecting the type and amount of additives or by adjusting the drying conditions of the photosensitive resin film, thereby adjusting the light absorption properties of the annular support layer. Examples of additives include, but are not limited to, photopolymerization initiators, light absorbers, and dyes. Those skilled in the art can prepare the package structure of the present invention having an annular support layer with the above-described light absorption properties by referring to this specification, in particular to the specific descriptions of the examples.

[0037] 1.2.3. Composition of the annular support layer A 355 Assuming that / T satisfies the above range, the composition of the annular support layer can be adjusted as needed. In one embodiment of the present invention, the annular resin layer is formed by exposing and developing a photosensitive resin composition. Here, the photosensitive resin composition is an epoxy resin-based photosensitive resin composition containing an epoxy resin and optionally containing an ethylenically unsaturated compound, a photopolymerization initiator, and other additives.

[0038] [Epoxy resin] Examples of epoxy resins include, but are not limited to, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol A novolac type epoxy resin, novolac type epoxy resin, alkyl novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, alicyclic epoxy resin, biphenyl epoxy resin, aralkyl epoxy resin, naphthalene ring epoxy resin, naphthol epoxy resin, biphenyl aralkyl epoxy resin, fluorene epoxy resin, xanthene epoxy resin, dicyclopentadiene epoxy resin, triglycidyl polyisocyanate, oxygen heterocyclic epoxy resin, etc. The above epoxy resins can be used individually or in combination of two or more. In one embodiment of the present invention, bisphenol A type epoxy resin, bisphenol A novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, aliphatic epoxy resin, or oxetane type epoxy resin is used.

[0039] In the above photosensitive resin composition, the amount of epoxy resin may be 50% to 99% by weight, particularly 55% to 98% by weight, and more particularly 60% to 95% by weight, based on the total weight of the photosensitive resin composition. For example, the amount of epoxy resin may be 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68%, 69%, 70%, 71%, 72%, 73%, 74%, 7 It may be 5% by weight, 76% by weight, 77% by weight, 78% by weight, 79% by weight, 80% by weight, 81% by weight, 82% by weight, 83% by weight, 84% by weight, 85% by weight, 86% by weight, 87% by weight, 88% by weight, 89% by weight, 90% by weight, 91% by weight, 92% by weight, 93% by weight, 94% by weight, 95% by weight, 96% by weight, 97% by weight, 98% by weight, or 99% by weight, or within the range of any two values ​​specified herein.

[0040] [Ethylene-unsaturated compounds] Ethylene-unsaturated compounds refer to compounds having at least one reactive ethylene functional group, such as difunctional compounds having two reactive ethylene functional groups. Examples of ethylenically unsaturated compounds include, but are not limited to, ethoxylated trimethylolpropane triacrylate, ethoxylated bisphenol A diacrylate, ethoxylated bisphenol A dimethacrylate, tripropylene glycol diacrylate, 1,6-hexanediol diacrylate, polypropylene glycol diacrylate, tris((meth)acryloxyisocyanate)hexamethylene isocyanurate, ethoxylated urethane di(meth)acrylate, propoxylated urethane di(meth)acrylate, ethoxylated / propoxylated urethane di(meth)acrylate, ethoxylated tris(methacryloxyisocyanate)hexamethylene isocyanurate, acrylated tris(methacryloxyisocyanate)hexamethylene isocyanurate, and ethoxylated / propoxylated tris(methacryloxyisocyanate)hexamethylene isocyanurate. The above ethylenically unsaturated compounds can be used individually or in combination of two or more. In one embodiment of the present invention, ethoxylated trimethylolpropane triacrylate is used.

[0041] In the above-described photosensitive resin composition, the amount of ethylenically unsaturated compound may be 0% to 70% by weight based on the total weight of the photosensitive resin composition. For example, the amount of ethylenically unsaturated compound may be 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, or 70% by weight, or within the range of any two values ​​described herein, based on the total weight of the photosensitive resin composition.

[0042] [Photopolymerization initiator] Examples of photopolymerization initiators include, but are not limited to, imidazole compounds, ketone compounds, quinone compounds, benzoin or benzoin ether compounds, polyhalogenated compounds, triazine compounds, organic peroxide compounds, and onium salt compounds. The above photopolymerization initiators can be used alone or in combination of two or more. In one embodiment of the present invention, an onium salt compound is used. Examples of the onium salt compounds mentioned above include, but are not limited to, diaryliodonium salts and triarylsulfonium salts obtained from combinations of diphenyliodonium, 4,4'-dichlorodiphenyliodonium, 4,4'-dimethoxydiphenyliodonium, 4,4'-di-tert-butyldiphenyliodonium, 4-methyl-4'-isopropyldiphenyliodonium, or 3,3'-dinitrodiphenyliodonium with chlorides, bromides, tetrafluoroborate, hexafluorophosphate, hexafluoroarsenate, hexafluoroantimonate, tetrakis(pentafluorophenyl)borate, or trifluoromethanesulfonic acid.

[0043] In the above-described photosensitive resin composition, the amount of photopolymerization initiator may be 0.5% to 10% by weight, more particularly 1% to 5% by weight, based on the total weight of the photosensitive resin composition. For example, the amount of photopolymerization initiator may be 0.5% by weight, 1% by weight, 1.5% by weight, 2% by weight, 2.5% by weight, 3% by weight, 3.5% by weight, 4% by weight, 4.5% by weight, 5% by weight, 5.5% by weight, 6% by weight, 6.5% by weight, 7% by weight, 7.5% by weight, 8% by weight, 8.5% by weight, 9% by weight, 9.5% by weight, or 10% by weight, or within the range of any two values ​​described herein.

[0044] [Additives] A 355Assuming that / T satisfies the above range, the photosensitive resin composition may further contain additives to specifically improve the properties of the annular support layer. Examples of additives include, but are not limited to, light absorbers, dyes, pigments, radical inhibitors, surfactants, reinforcing agents, and plasticizers. Each of the above additives can be used alone or in combination of two or more. In one embodiment of the present invention, the photosensitive resin composition may further contain a silane coupling agent, a light absorber, and a dye.

[0045] In a photosensitive resin composition, the amount of additive is preferably less than 20% by weight, based on the total weight of the photosensitive resin composition. For example, the amount of additive may be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, or 19% by weight, based on the total weight of the photosensitive resin composition, or within the range of any two values ​​described herein.

[0046] 1.3. Base material The type of substrate 103 is not particularly limited, and any substrate known in the packaging field can be used. In one embodiment of the present invention, the substrate 103 is a silicon-containing substrate electrically connected to the sensor chip 104, and may be a silicon wafer, a silicon carbide wafer, or a glass substrate.

[0047] 1.4. Optional elements In addition to the light-transmitting sheet, the annular support layer, and the substrate, the package structure of the present invention may further include other elements as necessary to specifically improve the properties of the package structure or to impart specific functions.

[0048] As shown in Figure 3, in one embodiment of the present invention, the package structure further includes an annular shielding layer 107 disposed between the light-transmitting sheet 101 and the annular support layer 102, wherein the installation area of ​​the annular shielding layer 107 does not cover the area of ​​the light-transmitting sheet directly above the sensing area 1041 of the sensor chip 104. The annular shielding layer 107 can at least partially shield the light incident on the sensing area 1041 of the sensor chip through the light-transmitting sheet, thereby further reducing glare generated within the package structure.

[0049] 2. Creating the package structure The method for manufacturing the package structure of the present invention is not particularly limited. Those skilled in the art can manufacture the package structure based on the disclosures herein, in particular on the specific embodiments of the following examples. In the following examples, a photosensitive resin film of a selected composition is placed on a light-transmitting sheet, the photosensitive resin film is cured by exposure and development to form an annular support layer, and then the light-transmitting sheet and the annular support layer are placed on a substrate with the annular support layer on the underside to obtain the package structure. The specific manufacturing method is shown in the following examples.

[0050] 3. Examples 3.1. Test Method The present invention will be further described by the following specific embodiments, the test equipment and methods used herein being as follows:

[0051] [Height of the ring-shaped support layer] A 5cm x 3cm section of the annular support layer is cut out to serve as a sample. This annular support layer is placed on the base (MS-11C base) of a film thickness gauge (model: Nikon Digimicro MFC-101 + MS-11C, manufactured by Nikon), and measured under a pressure of 140gf using the MFC-101 meter. The thickness of the annular support layer is measured at 10 different points, and the average value is calculated. This average value is defined as the height T of the annular support layer.

[0052] [Width and cross-sectional shape of the annular support layer] Using a glass cutter, the annular support layer is cut along with the light-transmitting sheet at the outer edge of the linear space, and the cross-sectional shape of the annular support layer is observed using a scanning electron microscope. The specimen is tilted at 75 degrees and observed at 200x magnification. A cross-section of the annular support layer is randomly selected, and a width L corresponding to half the height of the annular support layer (i.e., T / 2) is measured. A Measure.

[0053] Furthermore, the width L1 on the lower surface of the annular support layer is obtained by measuring the width of the annular support layer at positions that are 1 / 25, 2 / 25, 3 / 25, 4 / 25, and 5 / 25 of the total thickness of the annular support layer, starting from the lower end of the annular support layer (opposite the low-alkali glass), and averaging the width values ​​measured at these five locations to obtain the value of the width L1 on the lower surface of the annular support layer. Similarly, the width L2 on the upper surface of the annular support layer is obtained by measuring the width of the annular support layer at positions that are 1 / 25, 2 / 25, 3 / 25, 4 / 25, and 5 / 25 of the total thickness of the annular support layer, starting from the upper end of the annular support layer (the side in contact with the low-alkali glass), and averaging the width values ​​measured at these five locations to obtain the value of the width L2 on the upper surface of the annular support layer. If the value of "|(L2-L1)| / T" is less than 0.04, it is recorded as "○", indicating that the cross-sectional shape of the annular support layer is good. If the value of "|(L2-L1)| / T" is 0.04 or greater, it is recorded as "×" to indicate that the cross-sectional shape of the annular support layer is defective. In the formula, "|(L2-L1)|" means that the absolute value is taken.

[0054] [Footing length of the ring-shaped support layer] Using a glass cutter, the annular support layer is cut along with a light-transmitting sheet (low-alkali glass) at the outer edge of the linear space. Using a scanning electron microscope, the specimen is tilted at 75 degrees, and the cross-sectional shape of the annular support layer is observed at 5000x magnification. A cross-section of the annular support layer is randomly selected, and the side whose lower surface protrudes more toward the linear space is chosen to calculate the footing length. Specifically, a reference point is taken from the top surface of the annular support layer to the position of the side wall of the annular support layer, which is 1 / 5 of the total thickness of the annular support layer. A reference line perpendicular to the low-alkali glass surface is extended from this reference point to the low-alkali glass, and the length from the intersection of this reference line and the low-alkali glass surface to the intersection of the side wall of the annular support layer and the low-alkali glass surface is calculated as the footing length.

[0055] [Absorbance of the ring-shaped support layer] The annular support layer is cut into 5cm x 3cm pieces to be used as samples. The absorbance of this annular support layer is measured using a UV-Vis spectrophotometer (model: Shimadzu UV-1601, manufactured by Shimadzu) in the following manner. The annular support layer is positioned using a fixture so that its top and bottom surfaces are perpendicular to the direction of incident light, and then analyzed to obtain the absorbance spectrum under the following conditions: the diffraction grating is configured as an optical splitter, the test temperature is 25°C, the test pressure is 1 atm, the analysis mode is absorbance, the scanning wavelength range is 190nm to 1100nm, the blank sample is air, the scanning speed is 2200nm / min, the switch wavelength for switching the light source from a deuterium lamp to a tungsten lamp is 340.8nm, the sampling interval is 0.2nm, the slit width is 2.0nm, and Shimadzu UV Probe V1.11 software is used.

[0056] [Light transmittance of the ring-shaped support layer] Cut a 5cm x 3cm section of the annular support layer to use as a sample. Measure the light transmittance of the annular support layer using a UV-Vis spectrophotometer (Model: Shimadzu UV-1601, manufactured by Shimadzu) in the following manner: Place the annular support layer on the analysis stage using a fixture so that its upper and lower surfaces are perpendicular to the direction of the incident light source, and measure the light transmittance (TT) at a wavelength of 550nm. 550 The following conditions are used to measure the following: the analysis mode is transmittance, the scanning wavelength range is 190 nm to 1100 nm, the blank sample is air, the scanning speed is 2200 nm / min, the switch wavelength for switching the light source from a deuterium lamp to a tungsten lamp is 340.8 nm, and the sampling interval is 0.2 nm.

[0057] [Silicone Adhesion Test] Cut the annular support layer and low-alkali glass into 1.73 mm x 1.73 mm pieces to use as samples. 3 mm on the side of the annular support layer not in contact with the low-alkali glass. 2 Place the bare Si substrate and heat at 130°C at 3 kgf / cm². 2 The bonding is performed by applying pressure. Then, the force required to peel off the bare Si substrate is measured using a tensile testing machine. In the test, the direction of force application is parallel to the interface between the bare Si substrate and the annular support layer. The force acts directly on the bare Si substrate, and the specific point of force application is located at the midpoint of the side wall of the bare Si substrate. The unit of adhesion is kgf / 3mm 2 That is the case.

[0058] 3.2. Information on raw materials Table 1 below shows information regarding the raw materials used in the following examples and comparative examples. [Table 1]

[0059] 3.3. Examples 1-7 and Comparative Examples 1 and 2 3.3.1. Preparation of photosensitive resin film

[0060] [Example 1] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 1. The components were 90 parts by weight of BNE200 epoxy resin, 10 parts by weight of BE507 epoxy resin, 25 parts by weight of acetone, 2 parts by weight of triphenylsulfonium hexafluoroantimonate, 5 parts by weight of KBE-403 silane coupling agent, 0.2 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0061] The resin composition of Example 1 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 1. The coating and drying conditions were as follows: a coating thickness of 160 μm, a drying temperature of 100°C, a drying time of 20 minutes, and a thickness of 120 μm after drying.

[0062] [Example 2] The following components were mixed and stirred for 5 hours until homogeneous to obtain the resin composition of Example 2. The components were 20 parts by weight of BNE200 epoxy resin, 60 parts by weight of BE507 epoxy resin, 20 parts by weight of CNE200ELA epoxy resin, 30 parts by weight of acetone, 1.8 parts by weight of triphenylsulfonium tetrakis(pentafluorophenyl) borate, 5 parts by weight of KBE-403 silane coupling agent, 1.2 parts by weight of Oil Blue, and 12 parts by weight of tetrahydrofuran.

[0063] The resin composition of Example 2 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 2. The coating and drying conditions were as follows: a coating thickness of 25 μm, a drying temperature of 100°C, a drying time of 15 minutes, and a thickness of 20 μm after drying.

[0064] [Example 3] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 3. The components were 30 parts by weight of BNE200 epoxy resin, 20 parts by weight of BE507 epoxy resin, 50 parts by weight of PNE177 epoxy resin, 35 parts by weight of acetone, 4 parts by weight of triphenylsulfonium tetrakis(pentafluorophenyl)borate, 5 parts by weight of KBE-403 silane coupling agent, 0.5 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0065] The resin composition of Example 3 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 3. The coating and drying conditions were as follows: a coating thickness of 85 μm, a drying temperature of 90°C, a drying time of 19 minutes, and a thickness of 60 μm after drying.

[0066] [Example 4] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 4. The components were 75 parts by weight of BNE200 epoxy resin, 10 parts by weight of BE507 epoxy resin, 5 parts by weight of BNE220 epoxy resin, 10 parts by weight of 3EO TMPTA (ethylenically unsaturated compound), 25 parts by weight of acetone, 4 parts by weight of triarylsulfonium tetrakis(pentafluorophenyl) borate, 5 parts by weight of KBE-403 silane coupling agent, 0.5 parts by weight of Oil Blue, and 15 parts by weight of tetrahydrofuran.

[0067] The resin composition of Example 4 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 4. The coating and drying conditions were as follows: a coating thickness of 275 μm, a drying temperature of 95°C, a drying time of 30 minutes, and a thickness of 200 μm after drying.

[0068] [Example 5] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 5. The components were 20 parts by weight of BNE200 epoxy resin, 20 parts by weight of BE507 epoxy resin, 20 parts by weight of PNE177 epoxy resin, 20 parts by weight of BNE220 epoxy resin, 10 parts by weight of Celloxide 2021P epoxy resin, 10 parts by weight of TCM201 epoxy resin, 25 parts by weight of acetone, 2 parts by weight of triphenylsulfonium hexafluoroantimonate, 5 parts by weight of KBE-403 silane coupling agent, 0.2 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0069] The resin composition of Example 5 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 5. The coating and drying conditions were as follows: a coating thickness of 130 μm, a drying temperature of 100°C, a drying time of 20 minutes, and a thickness of 100 μm after drying.

[0070] [Example 6] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 6. The components were 50 parts by weight of BNE200 epoxy resin, 40 parts by weight of BE507 epoxy resin, 10 parts by weight of BNE220 epoxy resin, 25 parts by weight of acetone, 1.5 parts by weight of triphenylsulfonium hexafluoroantimonate, 0.5 parts by weight of triarylsulfonium tetrakis(pentafluorophenyl)borate, 4 parts by weight of KBE-403 silane coupling agent, 0.3 parts by weight of Solvent Blue, 0.05 parts by weight of Solvent Yellow, and 12 parts by weight of tetrahydrofuran.

[0071] The resin composition of Example 6 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 6. The coating and drying conditions were as follows: a coating thickness of 130 μm, a drying temperature of 90°C, a drying time of 25 minutes, and a thickness of 100 μm after drying.

[0072] [Example 7] The following components were mixed and stirred for 5 hours to obtain the resin composition of Example 7. The components were 20 parts by weight of BNE200 epoxy resin, 60 parts by weight of BE507 epoxy resin, 20 parts by weight of PNE177 epoxy resin, 25 parts by weight of acetone, 2 parts by weight of triphenylsulfonium hexafluoroantimonate, 5 parts by weight of KBE-403 silane coupling agent, 0.2 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0073] The resin composition of Example 7 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Example 7. The coating and drying conditions were as follows: a coating thickness of 130 μm, a drying temperature of 100°C, a drying time of 20 minutes, and a thickness of 100 μm after drying.

[0074] [Comparative Example 1] The following components were mixed and stirred for 5 hours to obtain the resin composition of Comparative Example 1. The components were 100 parts by weight of Celloxide 2021P epoxy resin, 25 parts by weight of acetone, 0.3 parts by weight of triphenylsulfonium hexafluoroantimonate, 2 parts by weight of SI-45, 5 parts by weight of KBE-403 silane coupling agent, 0.3 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0075] The resin composition of Comparative Example 1 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Comparative Example 1. The coating and drying conditions were as follows: a coating thickness of 130 μm, a drying temperature of 100°C, a drying time of 20 minutes, and a thickness of 100 μm after drying.

[0076] [Comparative Example 2] The following components were mixed and stirred for 5 hours to obtain the resin composition of Comparative Example 2. The components were 90 parts by weight of BNE220 epoxy resin, 10 parts by weight of TCM201 epoxy resin, 25 parts by weight of acetone, 1 part by weight of triphenylsulfonium tetrakis(pentafluorophenyl) borate, 4 parts by weight of triarylsulfonium tetrakis(pentafluorophenyl) borate, 5 parts by weight of KBE-403 silane coupling agent, and 12 parts by weight of tetrahydrofuran.

[0077] The resin composition of Comparative Example 2 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Comparative Example 2. The coating and drying conditions were as follows: a coating thickness of 85 μm, a drying temperature of 90°C, a drying time of 19 minutes, and a thickness of 60 μm after drying.

[0078] 3.3.2. Fabrication of the annular support layer and package structure A 2mm thick low-alkali glass sheet (model number: No-Alikali Glass 0.4, manufactured by Rocoes), used as a light-transmitting sheet, was preheated in a batch oven at 80°C for 10 minutes, and the surface temperature was maintained at 50°C before lamination. For each of the composite films prepared in Examples 1-7 and Comparative Examples 1-2, the PE protective film was removed, and the resulting photosensitive resin film, along with the PET protective film on top, was placed on the low-alkali glass with the photosensitive resin film facing the low-alkali glass side, and then pressurized using a laminating machine (model number: CSL-M25E, manufactured by C SUN). The laminating machine temperature was 80°C, and the laminating roller pressure was 2.5 kg / cm². 2 The lamination speed was 2.0 m / min. After lamination was complete, the resulting laminate was left to stand for 15 minutes, the PET protective film was removed, and the precursor material for the annular support layer was formed on the low-alkali glass.

[0079] Low-alkali glass and the precursor material for the annular support layer on top were placed on a heating plate at 80°C and heated for 5 minutes, then cooled to room temperature for 15 minutes. The precursor material for the annular support layer was exposed using an exposure apparatus (model: Contact Aligner, manufactured by Deya Optronic). The wavelength of the exposure light source was 365 nm (i-line). The exposure energy was 300 mJ / cm². 2 The process was continued until the target was reached. After exposure was complete, the exposed annular support layer precursor material was calcined at 70°C for 5 minutes.

[0080] Next, the exposed precursor material for the annular support layer was developed under the following conditions: propylene glycol methyl ether acetate (PGMEA) was used as the developer, the solution temperature was set to 24°C to 26°C, and the immersion time for development was 5 minutes. This process formed the annular support layer on low-alkali glass.

[0081] The low-alkali glass and annular support layer were washed with pure water and dried with nitrogen gas. Next, the low-alkali glass and annular support layer were placed on the silicon wafer substrate with the annular support layer facing downwards, and the low-alkali glass, annular support layer, and silicon wafer were heated to 130°C at a rate of 3 kg / cm². 2 The low-alkali glass and annular support layer were bonded to the silicon wafer by pressurizing at a pressure of 5 minutes. After bonding was complete, the resulting structure was heated in a batch oven at 170°C for 4 hours and then cooled at room temperature for 30 minutes to obtain the package structure.

[0082] 3.3.3. Testing of ring-shaped support layers The characteristics of the annular support layers of Examples 1-7 (E1-E7) and Comparative Examples 1-2 (CE1-CE2) were tested according to the test method described above. The results obtained are shown in Tables 2 and 3.

[0083] Table 2: Test results of silicone adhesion and cross-sectional shape of the annular support layer [Table 2]

[0084] Table 3: Other characteristics of the annular support layer [Table 3]

[0085] As shown in Table 2, in Examples 1 to 7, absorbance A at 355 nm 355 0.003 355 Annular support layers satisfying / T ≤ 0.03 were found to have good silicone adhesion, good cross-sectional shape, and short fitting length, demonstrating that annular support layers have excellent cross-sectional shape. Furthermore, the annular support layers of Examples 1 to 7 all have low transmittance at 550 nm, providing a package structure with low light transmittance and good anti-glare function. In contrast, Comparative Examples 1 and 2 have A 355 If the value of / T does not fall within the above range, it indicates that the above-mentioned beneficial effects cannot be provided.

[0086] 3.4. Comparative Examples 3-5 3.4.1. Preparation of photosensitive resin film

[0087] [Comparative Example 3] The following components were mixed and stirred for 5 hours to obtain the resin composition of Comparative Example 3. The components were 20 parts by weight of BNE200 epoxy resin, 60 parts by weight of BE507 epoxy resin, 20 parts by weight of CNE200ELA epoxy resin, 30 parts by weight of acetone, 4 parts by weight of triphenylsulfonium tetrakis(pentafluorophenyl)borate, 5 parts by weight of KBE-403 silane coupling agent, 0.06 parts by weight of Solvent Black, and 15 parts by weight of tetrahydrofuran.

[0088] ​The resin composition of Comparative Example 3 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Comparative Example 3. The coating and drying conditions were as follows: a coating thickness of 160 μm, a drying temperature of 100°C, a drying time of 15 minutes, and a thickness of 120 μm after drying.

[0089] [Comparative Example 4] The following components were mixed and stirred for 5 hours to obtain the resin composition of Comparative Example 4. The components were 30 parts by weight of BNE200 epoxy resin, 20 parts by weight of BE507 epoxy resin, 50 parts by weight of PNE177 epoxy resin, 25 parts by weight of acetone, 2 parts by weight of triphenylsulfonium hexafluoroantimonate, 0.3 parts by weight of diphenyliodonium tetrakis(pentafluorophenyl)borate, 5 parts by weight of KBE-403 silane coupling agent, 0.05 parts by weight of Solvent Blue, and 12 parts by weight of tetrahydrofuran.

[0090] The resin composition of Comparative Example 4 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was superimposed on the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Comparative Example 4. The coating and drying conditions were as follows: a coating thickness of 160 μm, a drying temperature of 100°C, a drying time of 20 minutes, and a thickness of 120 μm after drying.

[0091] [Comparative Example 5] The following components were mixed and stirred for 5 hours to obtain the resin composition of Comparative Example 5. The components were 20 parts by weight of BNE200 epoxy resin, 60 parts by weight of BE507 epoxy resin, 20 parts by weight of CNE200ELA epoxy resin, 25 parts by weight of acetone, 2 parts by weight of triphenylsulfonium hexafluoroantimonate, 5 parts by weight of KBE-403 silane coupling agent, 0.2 parts by weight of Reactive Yellow, 0.01 parts by weight of Solvent Black, and 15 parts by weight of tetrahydrofuran.

[0092] The resin composition of Comparative Example 5 was coated onto a PET film, which served as a protective film, using a Kodaira winding rod, and the coated resin composition was dried in an oven. Subsequently, a PE film, which served as a protective film, was placed over the surface of the dried resin composition to obtain a photosensitive resin film (i.e., a composite film) wrapped with the protective film of Comparative Example 5. The coating and drying conditions were as follows: a coating thickness of 140 μm, a drying temperature of 95°C, a drying time of 20 minutes, and a thickness of 100 μm after drying.

[0093] 3.4.2. Fabrication and testing of annular support layer and package structure The annular support layers and package structures of Comparative Examples 3 to 5 were prepared in the same manner as in Example 1, and the characteristics of the annular support layers of Comparative Examples 3 to 5 were measured according to the method described above. As shown in Table 4, the absorbance of the annular support layer at wavelength w1 was 0.003 ≤ A w1 If the / T condition is not met, the cross-sectional shape of the annular support layer, the silicon adhesion, or the light transmittance at 550 nm will not be satisfactory. [Table 4]

[0094] The above examples are used to illustrate the principles and effectiveness of the present invention and to demonstrate its features, and do not limit the scope of the invention. Those skilled in the art can make various modifications and substitutions based on the disclosures and suggestions of the invention described herein. Therefore, the scope of protection of the present invention is defined in the appended claims.

Claims

1. A package structure comprising a light-transmitting sheet having an upper surface and a lower surface, An annular support layer is disposed on the lower surface of the light-transmitting sheet and has an upper surface facing the light-transmitting sheet, a lower surface opposite to the upper surface, an inner surface, and an outer surface opposite to the inner surface. Includes a base material, The light-transmitting sheet and the annular support layer are arranged so that the lower surface of the annular support layer is placed on the substrate to form a sealing space. The annular support layer has a height T (μm) along the direction perpendicular to the light-transmitting sheet, and a corresponding width L at T / 2. Ａ It has a width L Ａ The range is 8 μm to 400 μm, and 0.05 ≤ T / L Ａ ≤ 25, and When the annular support layer is characterized by ultraviolet-visible spectroscopy along the direction perpendicular to the upper and lower surfaces of the annular support layer, the obtained spectrum is the absorbance A at 355 nm. ３５５ It has and 0.003 < A ３５５ A package structure where T ≤ 0.

03.

2. The annular support layer has a transmittance TT for light with a wavelength of 550 nm. ５５０ The transmittance TT is 50% or less. ５５０ The package structure according to claim 1, wherein the measurement is taken with the direction of the incident light perpendicular to the upper and lower surfaces of the annular support layer.

3. 0.4 ≤ T / L Ａ The package structure according to claim 1, wherein ≤ 3.

4. The spectrum has at least one point within a first wavelength range of more than 450 nm and less than or equal to 780 nm, where the first derivative is equal to 0 and the second derivative is less than 0, and each of the points independently has an A ｗ１ / T value, w1 represents the corresponding wavelength of the point, and A ｗ１ represents the corresponding absorbance, and 0.003 ≦ A ｗ１ / T. The package structure according to claim 1

5. The annular support layer has a width L at its lower surface. １ It has a width of (μm) and a width L on the upper surface of the annular support layer. ２ (μm) has L １ is L ２ A package structure according to any one of claims 1 to 4, which is not equal to the above.

6. The package structure according to any one of claims 1 to 4, wherein the inner surface of the annular support layer is a scattering surface that scatters incident light.

7. The package structure according to any one of claims 1 to 4, wherein the light-transmitting sheet is a glass sheet.

8. The package structure according to any one of claims 1 to 4, wherein the substrate is a silicon-containing substrate.

9. The package structure according to any one of claims 1 to 4, further comprising a sensor chip, wherein the sensor chip is electrically connected to the substrate and disposed within the sealing space.

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