Workpiece holding device, laser processing device, and annealing method

The workpiece holding device with a gas blowing mechanism on the chuck table's side surface addresses the structural complexity and temperature rise issues in laser annealing systems, ensuring consistent annealing effects and simplified device design.

JP2026109141APending Publication Date: 2026-07-01SUMITOMO HEAVY IND LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SUMITOMO HEAVY IND LTD
Filing Date
2024-12-19
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Existing laser annealing systems for semiconductor wafers have a complex structure due to the need for a cooler, chuck mechanism, and moving mechanism, which complicates the arrangement and leads to temperature rise issues during the annealing process.

Method used

A workpiece holding device with a chuck table and gas blowing mechanism that directs gas towards the side surface of the chuck table to suppress temperature rise, combined with a laser processing apparatus that uses a laser beam to activate dopants on the semiconductor wafer.

Benefits of technology

The temperature rise of the semiconductor wafer is suppressed, maintaining consistent annealing effects and reducing structural complexity, while also simplifying the device configuration and reducing equipment costs.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026109141000001_ABST
    Figure 2026109141000001_ABST
Patent Text Reader

Abstract

The present invention provides a workpiece holding device, a laser processing apparatus, and an annealing method that can suppress the temperature rise of the workpiece with a simple structure. [Solution] The workpiece holding device 10 has a chuck table 11 which has an upper surface 11A for holding the workpiece 60 and a side surface 11B extending downward from the edge of the upper surface. The gas blowing mechanism 12 blows gas toward the side surface 11b of the chuck table 11. This can suppress the temperature rise of the workpiece 60 held by the chuck table 11. Even when annealing is performed while blowing gas onto the semiconductor wafer to be annealed, the temperature rise of the semiconductor wafer can be suppressed.
Need to check novelty before this filing date? Find Prior Art