Semiconductor equipment

Abstract

The present invention provides a semiconductor device capable of suppressing resonance phenomena that occur when multiple semiconductor elements are operated in parallel. [Solution] The semiconductor device A1 comprises a plurality of first semiconductor elements 11, a power wiring section 311 to which the first electrodes of each first semiconductor element 11 are electrically connected, a power wiring section 313 to which connecting members 51A that conduct to the second electrodes 112 of each first semiconductor element 11 are connected, and a resin member 65 that covers the plurality of first semiconductor elements 11. In any two first semiconductor elements 11 adjacent to each other in the first direction x, the two second electrodes 112 conduct to each other through a first conduction path through a first conductor and a second conduction path through a second conductor. The first conduction path and the second conduction path are in a parallel relationship in at least part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. In such a semiconductor device, in order to secure the allowable current of the semiconductor device, a configuration in which a plurality of power semiconductor elements are connected in parallel is known (for example, Patent Document 1). The configuration (power module) described in Patent Document 1 includes a plurality of first semiconductor elements, a plurality of first connection wirings, a wiring layer, and a signal terminal. The plurality of first semiconductor elements are, for example, composed of MOSFETs. Each first semiconductor element is turned on and off in response to a drive signal input to the gate terminal. The plurality of first semiconductor elements are connected in parallel. The plurality of first connection wirings are, for example, wires, and connect the gate terminals of the plurality of first semiconductor elements and the wiring layer. The wiring layer is connected to the signal terminal. The signal terminal is connected to the gate terminals of each first semiconductor element via the wiring layer and each first connection wiring. The signal terminal supplies a drive signal for driving each first semiconductor element to the gate terminal of each first semiconductor element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] As described in Patent Document 1, when multiple semiconductor elements are connected in parallel, a resonance phenomenon may occur when each semiconductor element is switched (on / off driven). This resonance phenomenon can cause the drive signals of multiple semiconductor elements to vibrate, which can lead to malfunction or destruction of each semiconductor element.

[0005] This disclosure was conceived in view of the above circumstances, and one of its objectives is to provide a semiconductor device capable of suppressing resonance phenomena that occur when multiple semiconductor elements are operated in parallel. [Means for solving the problem]

[0006] The semiconductor device of this disclosure comprises two first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled in accordance with a first drive signal input to the third electrode; a first conductor electrically connecting the second electrodes of each of the two first semiconductor elements; a second conductor electrically connecting the second electrodes of each of the two first semiconductor elements; and a first power terminal electrically connected to the first conductor and conducting to the second electrode of each of the two first semiconductor elements. The two first semiconductor elements are electrically connected in parallel. Between the second electrodes of the two first semiconductor elements, there is a first conduction path through the first conductor and a second conduction path through the second conductor. The first conduction path and the second conduction path are in a parallel relationship, at least in part. The combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. [Effects of the Invention]

[0007] According to the above configuration of this disclosure, resonance phenomena can be suppressed in a semiconductor device. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment. [Figure 2]Figure 2 is a perspective view of Figure 1 with some parts of the case (top panel) and resin components omitted. [Figure 3] Figure 3 is a plan view showing a semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a plan view of Figure 3 with some parts of the case (top panel) and resin components omitted. [Figure 5] Figure 5 is a magnified view of a portion (the right half) of Figure 4. [Figure 6] Figure 6 is a magnified view of a portion (the left half) of Figure 4. [Figure 7] Figure 7 is a front view showing a semiconductor device according to the first embodiment. [Figure 8] Figure 8 is a bottom view showing a semiconductor device according to the first embodiment. [Figure 9] Figure 9 is a cross-sectional view along the line IX-IX in Figure 4. [Figure 10] Figure 10 is a cross-sectional view along line XX in Figure 4. [Figure 11] Figure 11 is a cross-sectional view along the line XI-XI in Figure 4. [Figure 12] Figure 12 is a cross-sectional view along the line XII-XII in Figure 4. [Figure 13] Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 4. [Figure 14] Figure 14 is a plan view showing a semiconductor device according to the second embodiment, in which part of the case (top plate) and resin components are omitted. [Figure 15] Figure 15 is a magnified view of a portion of Figure 14. [Figure 16] Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 14. [Figure 17] Figure 17 is a plan view showing a semiconductor device according to a first modified example of the second embodiment, in which part of the case (top plate) and resin members are omitted. [Figure 18] Figure 18 is a perspective view showing a semiconductor device according to a second modification of the second embodiment. [Figure 19]FIG. 19 is a view in which the sealing member is omitted in the perspective view of FIG. 18. [Figure 20] FIG. 20 is a plan view showing a semiconductor device according to a second modification of the second embodiment, in which the sealing member is shown by an imaginary line (two-dot chain line). [Figure 21] FIG. 21 is a view in which some connection members and the sealing member are omitted in the plan view of FIG. 20. [Figure 22] FIG. 22 is a plan view showing a semiconductor device according to the third embodiment, in which a part (top plate) of the case and the resin member are omitted. [Figure 23] FIG. 23 is an enlarged cross-sectional view of a main part taken along line XXIII-XXIII in FIG. 22. [Figure 24] FIG. 24 is an enlarged cross-sectional view of a main part taken along line XXIV-XXIV in FIG. 22. [Figure 25] FIG. 25 is an enlarged cross-sectional view of a main part taken along line XXV-XXV in FIG. 22. [Figure 26] FIG. 26 is a perspective view showing a semiconductor device according to the third embodiment. [Figure 27] FIG. 27 is a plan view showing a semiconductor device according to the third embodiment, in which the sealing member is shown by an imaginary line (two-dot chain line). [Figure 28] FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 27. [Figure 29] FIG. 29 is a plan view showing a first switching part according to a modification. [Figure 30] ​​​​​​​​​​​​​​Preferred embodiments of the semiconductor devices of this disclosure will be described below with reference to the drawings. Hereafter, identical or similar components will be denoted by the same reference numerals, and redundant descriptions will be omitted. The terms "first," "second," "third," etc., used in this disclosure are used merely as labels and are not necessarily intended to assign a sequence to the objects.

[0010] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed from a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0011] Figures 1 to 13 show a semiconductor device A1 according to the first embodiment. The semiconductor device A1 includes a plurality of first semiconductor elements 11, a plurality of second semiconductor elements 21, an insulating substrate 30, a plurality of power wiring sections 311, 312, 313, a plurality of signal wiring sections 321A, 321B, 322A, 322B, 323, a plurality of power terminals 41, 42, 43, a plurality of signal terminals 44A, 44B, 45A, 45B, 46, 47, a plurality of connecting members, a heat sink 60, a case 61, and a resin member 65. The semiconductor device A1 includes a plurality of connecting members 51A, 51B, 52A, 52B, 531A, 531B, 532A, 532B, 541A, 541B, 542A, 542B, 55, 56. As can be understood from the configuration which will be described in detail later, semiconductor device A1 includes a power wiring section 311 as an example of a "first wiring section", a power wiring section 313 as an example of a "second wiring section", and a power wiring section 312 as an example of a "third wiring section". Semiconductor device A1 also includes a power terminal 43 as an example of a "first power terminal", a power terminal 42 as an example of a "second power terminal", and a power terminal 41 as an example of a "third power terminal". Furthermore, semiconductor device A1 includes a connecting member 51A as an example of a "first connecting member", a connecting member 52A as an example of a "second connecting member", and a connecting member 51B as an example of a "third connecting member".

[0012] For the sake of explanation, the thickness direction of the first semiconductor element 11 will be referred to as the "thickness direction z". Also, in the following explanation, "plan view" refers to a view along the thickness direction z. One direction perpendicular to the thickness direction z will be referred to as the "first direction x". The first direction x is, for example, the left-right direction in the plan view of the semiconductor device A1 (see Figure 3). The direction perpendicular to the thickness direction z and the first direction x will be referred to as the "second direction y". The second direction y is, for example, the up-down direction in the plan view of the semiconductor device A1 (see Figure 3).

[0013] Each of the multiple first semiconductor elements 11 and the multiple second semiconductor elements 21 is, for example, a MOSFET. Instead of MOSFETs, each of the multiple first semiconductor elements 11 and the multiple second semiconductor elements 21 may be other switching elements such as field-effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs) or bipolar transistors including IGBTs. Each of the multiple first semiconductor elements 11 and the multiple second semiconductor elements 21 is constructed using SiC (silicon carbide). The semiconductor material is not limited to SiC, but may also be Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), or Ga2O3 (gallium oxide), etc.

[0014] Each of the multiple first semiconductor elements 11 has a first element main surface 11a and a first element back surface 11b, as shown in Figures 9 and 13. The first element main surface 11a and the first element back surface 11b are spaced apart from each other in the thickness direction z. The first element main surface 11a faces one direction (upwards) in the thickness direction z, and the first element back surface 11b faces the other direction (downwards) in the thickness direction z.

[0015] Each of the multiple first semiconductor elements 11 has a first electrode 111, a second electrode 112, and a third electrode 113, as shown in Figures 5, 6, 9, and 13. In the example where each first semiconductor element 11 is a MOSFET, the first electrode 111 is the drain, the second electrode 112 is the source, and the third electrode 113 is the gate. In each first semiconductor element 11, the first electrode 111 is located on the back surface 11b of the first element, as shown in Figures 9 and 13, and the second electrode 112 and the third electrode 113 are located on the main surface 11a of the first element, as can be understood from Figures 5, 6, 9, and 13.

[0016] Each of the multiple first semiconductor elements 11 has a first drive signal (e.g., gate voltage) input to its third electrode 113 (gate). Each of the multiple first semiconductor elements 11 switches between a conduction state and an interrupted state in response to the input first drive signal. This operation of switching between the conduction state and the interrupted state is called switching operation. In the conduction state, current flows from the first electrode 111 (drain) to the second electrode 112 (source), and in the interrupted state, this current does not flow. In other words, each first semiconductor element 11 is controlled on / off between the first electrode 111 (drain) and the second electrode 112 (source) by the first drive signal (e.g., gate voltage) input to the third electrode 113 (gate). The switching frequency of each first semiconductor element 11 depends on the frequency of the first drive signal.

[0017] Multiple first semiconductor elements 11 are electrically connected to each other at their first electrodes 111 (drains) and to each other at their second electrodes 112 (sources) in a configuration that will be described in detail later. As a result, the multiple first semiconductor elements 11 are electrically connected in parallel. Semiconductor device A1 inputs a common first drive signal to the multiple first semiconductor elements 11 connected in parallel, causing the multiple first semiconductor elements 11 to operate in parallel.

[0018] Multiple first semiconductor elements 11 are arranged in a first direction x, as shown in Figures 2, 4, and 9. Each first semiconductor element 11 is joined to the power wiring section 311 via a conductive bonding material. This conductive bonding material is, for example, solder, metal paste, or sintered metal.

[0019] Each of the multiple second semiconductor elements 21 has a second element main surface 21a and a second element back surface 21b, as shown in Figures 10 and 13. The second element main surface 21a and the second element back surface 21b are spaced apart from each other in the thickness direction z. The second element main surface 21a faces one direction (upwards) in the thickness direction z, and the second element back surface 21b faces the other direction (downwards) in the thickness direction z.

[0020] Each of the multiple second semiconductor elements 21 has a fourth electrode 211, a fifth electrode 212, and a sixth electrode 213, as shown in Figures 5, 6, 10, and 13. In the example where each second semiconductor element 21 is a MOSFET, the fourth electrode 211 is the drain, the fifth electrode 212 is the source, and the sixth electrode 213 is the gate. In each second semiconductor element 21, the fourth electrode 211 is located on the back surface 21b of the second element, as shown in Figures 10 and 13, and the fifth electrode 212 and the sixth electrode 213 are located on the main surface 21a of the second element, as can be understood from Figures 5, 6, 10, and 13.

[0021] Each of the multiple second semiconductor elements 21 has a second drive signal (e.g., gate voltage) input to its sixth electrode 213 (gate). Each of the multiple second semiconductor elements 21 switches between a conduction state and an interrupted state in response to the input second drive signal. In the conduction state, current flows from the fourth electrode 211 (drain) to the fifth electrode 212 (source), and this current does not flow in the interrupted state. In other words, each second semiconductor element 21 is controlled on / off between the fourth electrode 211 (drain) and the fifth electrode 212 (source) by the second drive signal (e.g., gate voltage) input to the sixth electrode 213 (gate). The switching frequency of each second semiconductor element 21 depends on the frequency of the second drive signal.

[0022] Multiple second semiconductor elements 21 are electrically connected to each other at their fourth electrodes 211 (drains) and to each other at their fifth electrodes 212 (sources) in a configuration that will be described in detail later. As a result, the multiple second semiconductor elements 21 are electrically connected in parallel. Semiconductor device A1 inputs a common second drive signal to the multiple second semiconductor elements 21 connected in parallel, causing the multiple second semiconductor elements 21 to operate in parallel.

[0023] Multiple second semiconductor elements 21 are arranged in a first direction x, as shown in Figures 2, 4, and 10. Each second semiconductor element 21 is joined to the power wiring section 313 via a conductive bonding material. This conductive bonding material is, for example, solder, metal paste, or sintered metal.

[0024] The heat sink 60 is, for example, a rectangular flat plate in plan view. The heat sink 60 is made of a material with high thermal conductivity, such as copper or a copper alloy. The surface of the heat sink 60 may be nickel-plated. A cooling member (e.g., a heat sink) is attached to the lower surface of the heat sink 60 in the thickness direction z, if necessary. As shown in Figures 9, 10, and 13, the insulating substrate 30 is placed on the heat sink 60.

[0025] Case 61 is, for example, a rectangular parallelepiped, as can be seen from Figures 1-4, 9, 10, and 13. Case 61 is made of a synthetic resin that has electrical insulating properties and excellent heat resistance, for example, PPS (polyphenylene sulfide). Case 61 is rectangular in shape, approximately the same size as the heat sink 60 in plan view. Case 61 includes a frame 62, a top plate 63, and a number of terminal blocks 641-644, as shown in Figures 1-4 and 7-13.

[0026] The frame portion 62 is fixed to the surface of the heat sink 60 on the upper side in the thickness direction z. The top plate 63 is fixed to the frame portion 62. As shown in Figures 1, 3, 9, 10, and 13, the top plate 63 closes the opening on the upper side in the thickness direction z of the frame portion 62. As shown in Figures 9, 10, and 13, the top plate 63 faces the heat sink 60 which closes the lower side in the thickness direction z of the frame portion 62. The top plate 63, the heat sink 60, and the frame portion 62 partition the circuit housing space (a space for housing multiple first semiconductor elements 11 and multiple second semiconductor elements 21, etc.) inside the case 61. Hereafter, this circuit housing space will be referred to as the inside of the case 61.

[0027] The two terminal blocks 641 and 642 are positioned on one side of the frame 62 in the first direction x and are integrally formed with the frame 62. The two terminal blocks 643 and 644 are positioned on the other side of the frame 62 in the first direction x and are integrally formed with the frame 62. The two terminal blocks 641 and 642 are positioned along the second direction y with respect to one side wall of the frame 62 in the first direction x. Terminal block 641 covers a portion of the power terminal 41, and a portion of the power terminal 41 is positioned on the upper surface in the thickness direction z. Terminal block 642 covers a portion of the power terminal 42, and a portion of the power terminal 42 is positioned on the upper surface in the thickness direction z. The two terminal blocks 643 and 644 are positioned along the second direction y with respect to the other side wall of the frame 62 in the first direction x. Terminal block 643 covers a portion of one of the two power terminals 43, and this portion of the power terminal 43 is positioned on the upper surface in the thickness direction z. Terminal block 644 covers a portion of the other of the two power terminals 43, and this portion of the power terminal 43 is positioned on the upper surface in the thickness direction z.

[0028] As shown in Figures 9, 10, and 13, the resin member 65 fills the area enclosed by the top plate 63, the heat sink 60, and the frame 62 (the circuit housing space). The resin member 65 covers a plurality of first semiconductor elements 11 and a plurality of second semiconductor elements 21, etc. The resin member 65 is made of, for example, black epoxy resin. The constituent material of the resin member 65 may be other insulating materials such as silicone gel instead of epoxy resin. The semiconductor device A1 is not limited to a configuration that includes the resin member 65, and may not include the resin member 65.

[0029] The insulating substrate 30 has electrical insulating properties. The constituent material of the insulating substrate 30 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), and Al2O3 (aluminum oxide). The insulating substrate 30 is, for example, in the shape of a flat plate.

[0030] As shown in Figures 9, 10, and 13, the insulating substrate 30 has a main surface 30a and a back surface 30b. The main surface 30a and the back surface 30b are spaced apart in the thickness direction z. The main surface 30a faces one direction (upwards) in the thickness direction z, and the back surface 30b faces the other direction (downwards) in the thickness direction z. Multiple first semiconductor elements 11 and multiple second semiconductor elements 21 are each arranged on the main surface 30a. The back surface 30b faces the heat sink 60.

[0031] Multiple power wiring sections 311-313 and multiple signal wiring sections 321A, 321B, 322A, 322B, 323 are formed on the main surface 30a of the insulating substrate 30, as shown in Figures 4, 9, 10, and 13. Each of the multiple power wiring sections 311-313 and the multiple signal wiring sections 321A, 321B, 322A, 322B, 323 is, for example, a metal layer. This metal layer is made of, for example, copper or a copper alloy, but may be made of aluminum or an aluminum alloy instead of copper or a copper alloy. The multiple power wiring sections 311-313 and the multiple signal wiring sections 321A, 321B, 322A, 322B, 323 are spaced apart from each other.

[0032] Multiple power wiring sections 311, 312, and 313 form the main current conduction path in semiconductor device A1.

[0033] The power wiring section 311 is electrically connected to each first electrode 111 (drain) of the plurality of first semiconductor elements 11. The power wiring section 311 is electrically connected to the power terminal 41. The power wiring section 311 includes two pad sections 311a, 311b and an extension section 311c. The two pad sections 311a, 311b and the extension section 311c are connected to each other and are integrally formed.

[0034] As shown in Figures 4 to 6, 9 and 13, the pad portion 311a is joined to a plurality of first semiconductor elements 11 and is electrically connected to each first electrode 111 (drain) of the plurality of first semiconductor elements 11. The pad portion 311a extends from the pad portion 311b along the first direction x. In a plan view, the pad portion 311a is, for example, a strip with the first direction x as its longitudinal direction. The plurality of first semiconductor elements 11 are arranged on the pad portion 311a along the first direction x.

[0035] As shown in Figures 4, 5, and 9, the power terminal 41 is attached to the pad portion 311b. In a plan view, the pad portion 311b is strip-shaped with the second direction y as its longitudinal direction. The pad portion 311b is connected to one end of the pad portion 311a in the first direction x (the side where the power terminal 41 is located).

[0036] As shown in Figures 4 and 6, the extension portion 311c extends in the second direction y from the other end of the pad portion 311a in the first direction x (opposite the side where the power terminal 41 is located). In the example shown in Figures 4 and 6, the extension portion 311c is located in a plan view between the power wiring portion 312 (the pad portion 312b described later) and the two signal wiring portions 321A and 322A.

[0037] The power wiring section 312 is electrically connected to each of the fifth electrodes 212 (sources) of the multiple second semiconductor elements 21. The power wiring section 312 is electrically connected to the power terminal 42. The power wiring section 312 includes two pad sections 312a and 312b. The two pad sections 312a and 312b are connected to each other and are integrally formed.

[0038] As shown in Figures 5, 6, and 13, the pad portion 312a is joined to a plurality of connecting members 51B, and is electrically connected to each of the fifth electrodes 212 (sources) of the plurality of second semiconductor elements 21 via the plurality of connecting members 51B. The pad portion 312a extends from the pad portion 312b along the first direction x. In a plan view, the pad portion 312a is, for example, a strip with the first direction x as its longitudinal direction. The pad portion 312a is located on the other side of the second direction y (the lower side in Figure 4) relative to the pad portion 311a, and is formed parallel (or approximately parallel) to the pad portion 311a.

[0039] As shown in Figures 4 and 5, a slit 312s is formed in the pad portion 312a. In a plan view, the slit 312s extends along the first direction x, with its base end being the edge on one side of the pad portion 312a in the first direction x (the side where the pad portion 312b is located). The tip of the slit 312s is located in the center of the pad portion 312a in the first direction x.

[0040] As shown in Figures 4, 5, and 10, the power terminal 42 is joined to the pad portion 312b. In a plan view, the pad portion 312b is strip-shaped with the second direction y as its longitudinal direction. The pad portion 312b is connected to one end of the pad portion 312a in the first direction x (the side where the power terminal 42 is located). The pad portion 312b is located on the other side of the pad portion 311b in the second direction y (the lower side in Figure 4).

[0041] The power wiring section 313 is electrically connected to the second electrodes 112 (sources) of each of the multiple first semiconductor elements 11, and also to the fourth electrodes 211 (drains) of each of the multiple second semiconductor elements 21. The power wiring section 313 is electrically connected to two power terminals 43. The power wiring section 313 includes two pad sections 313a and 313b. The two pad sections 313a and 313b are connected to each other and are integrally formed.

[0042] As shown in Figures 5, 6, and 13, the pad portion 313a has multiple connecting members 51A joined to it, and is electrically connected to each second electrode 112 (source) of each of the multiple first semiconductor elements 11 via the multiple connecting members 51A. As shown in Figures 4 to 6, 10, and 13, the pad portion 313a has multiple second semiconductor elements 21 joined to it, and is electrically connected to each fourth electrode 211 (drain) of each of the multiple second semiconductor elements 21. The pad portion 313a extends from the pad portion 313b along the first direction x. In a plan view, the pad portion 313a is, for example, a strip with the first direction x as its longitudinal direction. The multiple second semiconductor elements 21 are arranged on the pad portion 313a along the first direction x. The pad portion 313a is located between the pad portion 311a and the pad portion 312a in the second direction y, and is formed parallel (or approximately parallel) to the pad portions 311a and 312a.

[0043] As shown in Figures 4, 6, 9, and 10, the pad portion 313b has two power terminals 43 joined to it. In a plan view, the pad portion 313b is strip-shaped with the second direction y as its longitudinal direction. The pad portion 313b is connected to the other end of the pad portion 313a in the first direction x (the side where each power terminal 43 is located).

[0044] As shown in Figures 4 to 6, the signal wiring section 321A is connected to multiple connecting members 531A and is electrically connected to each of the third electrodes 113 (gates) of the multiple first semiconductor elements 11 via the multiple connecting members 531A. The signal wiring section 321A transmits the first drive signal. As shown in Figures 4 to 6, the signal wiring section 321B is connected to multiple connecting members 531B and is electrically connected to each of the sixth electrodes 213 (gates) of the multiple second semiconductor elements 21 via the multiple connecting members 531B. The signal wiring section 321B transmits the second drive signal. As shown in Figures 4 to 6, the signal wiring section 321A and the signal wiring section 321B are located on opposite sides of each pad section 311a, 312a, and 313a in the second direction y. The signal wiring section 321A is located on the opposite side of the pad section 313a from the pad section 311a in the second direction y. The signal wiring section 321B is located in the second direction y on the opposite side of the pad section 313a from the pad section 312a.

[0045] As shown in Figures 4 to 6, the signal wiring section 322A is connected to multiple connecting members 541A and conducts to each second electrode 112 (source) of multiple first semiconductor elements 11 via the multiple connecting members 541A. The signal wiring section 322A transmits a first detection signal. The first detection signal is an electrical signal indicating the conduction state of each first semiconductor element 11, and is, for example, a voltage signal corresponding to the current (source current) flowing through each second electrode 112 (source). As shown in Figures 4 to 6, the signal wiring section 322B is connected to multiple connecting members 541B and conducts to each fifth electrode 212 (source) of multiple second semiconductor elements 21 via the multiple connecting members 541B. The signal wiring section 322B transmits a second detection signal. The second detection signal is an electrical signal indicating the conduction state of each second semiconductor element 21, and is, for example, a voltage signal corresponding to the current (source current) flowing through each fifth electrode 212 (source). As shown in Figures 4 to 6, signal wiring section 322A and signal wiring section 322B are located on opposite sides of each pad section 311a, 312a, and 313a in the second direction y. Signal wiring section 322A is located on the same side as signal wiring section 321A with respect to pad section 311a in the second direction y. Signal wiring section 322B is located on the same side as signal wiring section 321B with respect to pad section 312a in the second direction y.

[0046] The pair of signal wiring sections 323 are spaced apart from each other in the second direction y, as shown in Figures 4 and 5. A thermistor 91, for example, is bonded to each of the pair of signal wiring sections 323. The thermistor 91 is positioned across the pair of signal wiring sections 323. In an example different from semiconductor device A1, the thermistor 91 may not be bonded to the pair of signal wiring sections 323. As shown in Figures 4 and 5, the pair of signal wiring sections 323 are located near the corners of the insulating substrate 30. In the first direction x, the pair of signal wiring sections 323 are located between the pad section 311a and the two signal wiring sections 321A, 322A.

[0047] Multiple power terminals 41-43 and multiple signal terminals 44A, 44B, 45A, 45B, 46, 47 are partially exposed from the case 61, as shown in Figures 1 and 3. The constituent materials of the multiple power terminals 41-43 and multiple signal terminals 44A, 44B, 45A, 45B, 46, 47 are, for example, copper or a copper alloy, but other metals may also be used.

[0048] As shown in Figures 4, 5, and 9, the power terminal 41 is connected to the power wiring section 311 inside the case 61. The power terminal 41 is electrically connected to each of the first electrodes 111 (drains) of the plurality of first semiconductor elements 11 via the power wiring section 311.

[0049] As shown in Figures 4, 5, and 10, the power terminal 42 is connected to the power wiring section 312 inside the case 61. The power terminal 42 is electrically connected to each of the fifth electrodes 212 (sources) of the multiple second semiconductor elements 21 via the power wiring section 312.

[0050] The two power terminals 43 are connected to the power wiring section 313 inside the case 61, as shown in Figures 4, 6, 9, and 10. The two power terminals 43 are electrically connected to the second electrodes 112 (sources) of each of the multiple first semiconductor elements 11 and to the fourth electrodes 211 (drains) of each of the multiple second semiconductor elements 21 via the power wiring section 313.

[0051] Power terminals 41 and 42 are connected to a power supply and to which a power supply voltage (e.g., DC voltage) is applied. For example, power terminal 41 is the positive terminal (P terminal) and power terminal 42 is the negative terminal (N terminal). Power terminals 41 and 42 are spaced apart from each other and arranged along the second direction y. Two power terminals 43 output voltages (e.g., AC voltages) converted by the switching operations of the plurality of first semiconductor elements 11 and the plurality of second semiconductor elements 21. Each of the two power terminals 43 is a power output terminal (OUT terminal). The two power terminals 43 are spaced apart from each other and arranged along the second direction y. Power terminals 41 and 42 and the two power terminals 43 are located on opposite sides of the insulating substrate 30 in the first direction x. In configurations different from semiconductor device A1, the number of power terminals 43 may be one instead of two. In this case, one power terminal 43 may be located in the center of the second direction y on one side wall of the frame portion 62 in the first direction x. The main current in the semiconductor device A1 is generated by the power supply voltage and the converted voltage.

[0052] As shown in Figure 6, a connecting member 532A is joined to the signal terminal 44A. The signal terminal 44A is electrically connected to the signal wiring section 321A via the connecting member 532A. Since the signal wiring section 321A is electrically connected to each of the third electrodes 113 (gates) of the multiple first semiconductor elements 11, the signal terminal 44A is electrically connected to each of the third electrodes 113 (gates) of the multiple first semiconductor elements 11. The signal terminal 44A is the input terminal for the first drive signal.

[0053] As shown in Figure 5, a connecting member 532B is joined to the signal terminal 44B. The signal terminal 44B is electrically connected to the signal wiring section 321B via the connecting member 532B. Since the signal wiring section 321B is electrically connected to each of the sixth electrodes 213 (gates) of the multiple second semiconductor elements 21, the signal terminal 44B is electrically connected to each of the sixth electrodes 213 (gates) of the multiple second semiconductor elements 21. The signal terminal 44B is the input terminal for the second drive signal.

[0054] As shown in Figure 6, a connecting member 542A is joined to the signal terminal 45A. The signal terminal 45A is electrically connected to the signal wiring section 322A via the connecting member 542A. Since the signal wiring section 322A is electrically connected to each of the second electrodes 112 (sources) of the multiple first semiconductor elements 11, the signal terminal 45A is electrically connected to each of the second electrodes 112 (sources) of the multiple first semiconductor elements 11. The signal terminal 45A is the output terminal for the first detection signal.

[0055] As shown in Figure 5, a connecting member 542B is joined to the signal terminal 45B. The signal terminal 45B is electrically connected to the signal wiring section 322B via the connecting member 542B. Since the signal wiring section 322B is electrically connected to each of the fifth electrodes 212 (sources) of the multiple second semiconductor elements 21, the signal terminal 45B is electrically connected to each of the fifth electrodes 212 (sources) of the multiple second semiconductor elements 21. The signal terminal 45B is the output terminal for the second detection signal.

[0056] Each of the pair of signal terminals 46 is connected to each of the pair of connecting members 55, as shown in Figure 5. The pair of signal terminals 46 are electrically connected to the pair of signal wiring sections 323 via the pair of connecting members 55. As a result, the pair of signal terminals 46 are electrically connected to the thermistor 91. The pair of signal terminals 46 are terminals for detecting the temperature inside the case 61. If the thermistor 91 is not connected to the pair of signal wiring sections 323, the pair of signal terminals 46 are non-connected terminals.

[0057] As shown in Figure 6, a connecting member 56 is joined to the signal terminal 47. The signal terminal 47 is electrically connected to the power wiring section 311 via the connecting member 56. As a result, the signal terminal 47 is electrically connected to each of the first electrodes 111 (drains) of the multiple first semiconductor elements 11. The signal terminal 47 is the output terminal for the third detection signal. The third detection signal is a signal for detecting the voltage applied to the power wiring section 311.

[0058] Multiple connecting members 51A, 51B, 52A, 52B, 531A, 531B, 532A, 532B, 541A, 541B, 542A, 542B, 55, 56 each provide electrical conductivity at two points that are spaced apart from each other. In semiconductor device A1, multiple connecting members 51A, 51B, 52A, 52B, 531A, 531B, 532A, 532B, 541A, 541B, 542A, 542B, 55, 56 are all bonding wires. The constituent material of each of the multiple connecting members 51A, 51B, 52A, 52B, 531A, 531B, 532A, 532B, 541A, 541B, 542A, 542B, 55, 56 may be gold, copper, or aluminum.

[0059] As shown in Figures 4 to 6 and Figure 13, each of the multiple connecting members 51A is joined to the pad portion 313a of each of the multiple second electrodes 112 (sources) of the multiple first semiconductor elements 11, thereby making electrical contact between each second electrode 112 and the power wiring portion 313. In the semiconductor device A1, as shown in Figures 5 and 6, each of the multiple second electrodes 112 has multiple connecting members 51A joined to it. The main current in the semiconductor device A1 flows through the multiple connecting members 51A. In the semiconductor device A1, the connecting members 51A may be metal (for example, copper) plate-shaped members instead of bonding wires. In this case, the number of connecting members 51A joined to each second electrode 112 and pad portion 313a may be as few as one.

[0060] As shown in Figures 4 to 6 and Figure 13, each of the multiple connecting members 51B is joined to each of the fifth electrodes 212 (sources) and pad portions 312a of the multiple second semiconductor elements 21, thereby creating electrical conductivity between each fifth electrode 212 and the power wiring portion 312. In semiconductor device A1, as shown in Figures 5 and 6, each of the multiple fifth electrodes 212 has multiple connecting members 51B joined to it. The main current in semiconductor device A1 flows through the multiple connecting members 51B. In semiconductor device A1, the connecting members 51B may be metal (for example, copper) plate-shaped members instead of bonding wires. In this case, the number of connecting members 51B joined to each of the fifth electrodes 212 and pad portions 312a may be as few as one.

[0061] Each of the multiple connecting members 52A is joined to the second electrodes 112 (sources) of two first semiconductor elements 11 adjacent to each other in the first direction x, as shown in Figures 5, 6, and 9, thereby making these second electrodes 112 electrically conductive. Each of the multiple connecting members 52A extends along the first direction x in a plan view.

[0062] Each of the multiple connecting members 52B is joined to the fifth electrodes 212 (sources) of two second semiconductor elements 21 adjacent to each other in the first direction x, as shown in Figures 5, 6, and 10, thereby making these fifth electrodes 212 electrically conductive. Each of the multiple connecting members 52B extends along the first direction x in a plan view.

[0063] As shown in Figures 5 and 6, each of the multiple connecting members 531A is joined to the signal wiring section 321A and each of the third electrodes 113 (gates) of the multiple first semiconductor elements 11, thereby creating electrical conductivity between each third electrode 113 and the signal wiring section 321A. As shown in Figures 5 and 6, the connecting member 532A is joined to the signal wiring section 321A and the signal terminal 44A, thereby creating electrical conductivity between the signal wiring section 321A and the signal terminal 44A. Therefore, the signal terminal 44A is electrically connected to each of the third electrodes 113 of the multiple first semiconductor elements 11 via the connecting member 532A, the signal wiring section 321A, and the multiple connecting members 531A.

[0064] As shown in Figures 5 and 6, each of the multiple connecting members 531B is joined to the signal wiring section 321B and to each of the sixth electrodes 213 (gates) of the multiple second semiconductor elements 21, thereby creating electrical conductivity between each sixth electrode 213 and the signal wiring section 321B. As shown in Figures 5 and 6, the connecting member 532B is joined to the signal wiring section 321B and the signal terminal 44B, thereby creating electrical conductivity between the signal wiring section 321B and the signal terminal 44B. Therefore, the signal terminal 44B is electrically connected to each of the sixth electrodes 213 of the multiple second semiconductor elements 21 via the connecting member 532B, the signal wiring section 321B, and the multiple connecting members 531B.

[0065] As shown in Figures 5 and 6, each of the multiple connecting members 541A is connected to the signal wiring section 322A and each of the second electrodes 112 (sources) of the multiple first semiconductor elements 11, thereby creating electrical conductivity between each second electrode 112 and the signal wiring section 322A. As shown in Figures 5 and 6, each connecting member 542A is connected to the signal wiring section 322A and the signal terminal 45A, thereby creating electrical conductivity between the signal wiring section 322A and the signal terminal 45A. Therefore, the signal terminal 45A is electrically connected to each of the second electrodes 112 of the multiple first semiconductor elements 11 via the connecting member 542A, the signal wiring section 322A, and the multiple connecting members 541A.

[0066] As shown in Figures 5 and 6, each of the multiple connecting members 541B is joined to the signal wiring section 322B and to each of the fifth electrodes 212 (sources) of the multiple second semiconductor elements 21, thereby creating electrical conductivity between each fifth electrode 212 and the signal wiring section 322B. As shown in Figures 5 and 6, each connecting member 542B is joined to the signal wiring section 322B and the signal terminal 45B, thereby creating electrical conductivity between the signal wiring section 322B and the signal terminal 45B. Therefore, the signal terminal 45B is electrically connected to each of the fifth electrodes 212 of the multiple second semiconductor elements 21 via the connecting member 542B, the signal wiring section 322B, and the multiple connecting members 541B.

[0067] As shown in Figure 5, each of the pair of connecting members 55 is connected to a pair of signal wiring sections 323 and a pair of signal terminals 46, respectively, and they are electrically connected. Therefore, the pair of signal terminals 46 are electrically connected to the thermistor 91 via the pair of connecting members 55 and the pair of signal wiring sections 323. If the thermistor 91 is not connected to the pair of signal wiring sections 323, the pair of connecting members 55 is unnecessary.

[0068] As shown in Figure 6, the connecting member 56 is joined to the extension portion 311c and the signal terminal 47, and makes electrical contact between the power wiring portion 311 and the signal terminal 47. Therefore, the signal terminal 47 is electrically connected to each of the first electrodes 111 (drains) of the plurality of first semiconductor elements 11 via the connecting member 56 and the power wiring portion 311.

[0069] The effects and benefits of semiconductor device A1 are as follows:

[0070] The semiconductor device A1 comprises a plurality of first semiconductor elements 11, which are connected in parallel to each other. The semiconductor device A1 also comprises a first conductor and a second conductor, which are electrically interposed between the second electrodes 112 (sources) of two first semiconductor elements 11 adjacent to each other in a first direction x. For example, each of the first and second conductors constitutes a conductive path extending between two second electrodes 112, electrically connecting the two second electrodes 112 to each other. In the semiconductor device A1, the first conductor consists of a connecting member 51A joined to the second electrode 112 of one first semiconductor element 11, a connecting member 51A joined to the second electrode 112 of the other first semiconductor element 11, and a portion of the pad portion 313a (power wiring portion 313) interposed between the respective joined connecting members 51A. The second conductor is a connecting member 52A that is directly connected to each second electrode 112 of the two first semiconductor elements 11. In any two first semiconductor elements 11 adjacent to each other in the first direction x, the two second electrodes 112 conduct through a first conduction path through the first conductor and a second conduction path through the second conductor. The first conduction path is the conduction path between the second electrodes 112 that are connected when the main current path is formed. The first conduction path and the second conduction path are in a parallel relationship, at least in part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. With this configuration, in any two first semiconductor elements 11 adjacent to each other in the first direction x, the inductance between the second electrodes 112 (sources) is reduced by the first conduction path formed when the main current path is formed and the second conduction path which is in a parallel relationship, at least in part. In other words, semiconductor device A1 can reduce the inductance between the second electrodes 112 (sources) compared to when there is no second conduction path. According to the inventor's research, it has been found that when two first semiconductor elements 11 are operated in parallel, the smaller the inductance between each second electrode 112 (source), the more the occurrence of resonance phenomena can be suppressed. Therefore, semiconductor device A1 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0071] In semiconductor device A1, the inductance of the second conduction path is smaller than the inductance of the first conduction path. In semiconductor device A1, since the first conduction path and the second conduction path are in parallel, when the inductance of the first conduction path is the same, the smaller the inductance of the second conduction path, the smaller the combined inductance. In other words, when the inductance of the first conduction path is the same, the smaller the inductance of the second conduction path, the smaller the ratio of the combined inductance to the inductance of the first conduction path. Therefore, semiconductor device A1 can reduce the inductance between the second electrodes 112.

[0072] In semiconductor device A1, the second conduction path is shorter than the first conduction path. Inductance varies depending on the material, shape, and size (length, diameter, thickness, etc.) of the conductor; for example, the shorter the length, the smaller the inductance. Therefore, semiconductor device A1 can make the inductance of the second conduction path smaller than the inductance of the first conduction path.

[0073] In semiconductor device A1, the connecting member 52A is directly joined to the second electrodes 112 of two first semiconductor elements 11 adjacent to each other in the first direction x. With this configuration, the length of the second conduction path can be made shorter than the length of the first conduction path in the conduction between the second electrodes 112 of two first semiconductor elements 11 adjacent to each other in the first direction x.

[0074] The semiconductor device A1 comprises a plurality of second semiconductor elements 21, which are connected in parallel to each other. The semiconductor device A1 also comprises a third conductor and a fourth conductor, which are electrically interposed between the fifth electrodes 212 (sources) of two second semiconductor elements 21 adjacent to each other in the first direction x. In the semiconductor device A1, the third conductor is the portion interposed between a plurality of connecting members 51B connected to the fifth electrodes 212 of a pair of second semiconductor elements 21, a plurality of connecting members 51A connected to the fifth electrode 212 of the other second semiconductor element 21, and the portion of the pad portion 312a (power wiring portion 312) where these connecting members 51A are joined. The fourth conductor is a connecting member 52B directly connected to the fifth electrodes 212 of the two second semiconductor elements 21. Furthermore, in any two second semiconductor elements 21 adjacent to each other in the first direction x, the two fifth electrodes 212 conduct through a third conduction path through the third conductor and a fourth conduction path through the fourth conductor. The third conduction path is the conduction path between the fifth electrodes 212 that are connected when the main current path is formed. The third conduction path and the fourth conduction path are at least partially in parallel, and the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. With this configuration, in any two second semiconductor elements 21 adjacent to each other in the first direction x, the inductance between the fifth electrodes 212 (sources) is reduced by the third conduction path formed when the main current path is formed and the fourth conduction path which is at least partially in parallel. In other words, semiconductor device A1 can reduce the inductance between the fifth electrodes 212 (sources) compared to when there is no fourth conduction path. Therefore, the semiconductor device A1, like the multiple first semiconductor elements 11, can suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel.

[0075] In semiconductor device A1, the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. In semiconductor device A1, since the third and fourth conduction paths are in parallel, when the inductance of the third conduction path is the same, the smaller the inductance of the fourth conduction path, the smaller the combined inductance. In other words, when the inductance of the third conduction path is the same, the smaller the inductance of the fourth conduction path, the smaller the ratio of the combined inductance to the inductance of the third conduction path. Therefore, semiconductor device A1 can reduce the inductance between the fifth electrodes 212.

[0076] In semiconductor device A1, the fourth conduction path is shorter than the third conduction path. This configuration makes it possible to make the inductance of the fourth conduction path smaller than the inductance of the third conduction path in semiconductor device A1.

[0077] In semiconductor device A1, the connecting member 52B is directly joined to the fifth electrodes 212 of two second semiconductor elements 21 adjacent to each other in the first direction x. With this configuration, the length of the fourth conduction path can be made shorter than the length of the third conduction path in conducting between the fifth electrodes 212 of two second semiconductor elements 21 adjacent to each other in the first direction x.

[0078] In semiconductor device A1, each connecting member 52A may be a metal (for example, copper) plate-shaped member instead of a bonding wire. In this case, the inductance in the connecting member 52A can be reduced, and thus the inductance of the second conduction path can be further reduced. Similarly, each connecting member 52B may be a metal (for example, copper) plate-shaped member instead of a bonding wire. In this case, the inductance in the connecting member 52B can be reduced, and thus the inductance of the fourth conduction path can be further reduced.

[0079] Figures 14 to 16 show a semiconductor device B1 according to a second embodiment. The semiconductor device B1 differs from the semiconductor device A1 mainly in the following respects: First, it is equipped with a connecting member 57A instead of the multiple connecting members 51A and 52A. Second, it is equipped with a connecting member 57B instead of the multiple connecting members 51B and 52B.

[0080] The pair of connecting members 57A and 57B are each metal plate-shaped members. The metal is not particularly limited, but for example, it may be copper or a copper alloy.

[0081] As shown in Figures 14 and 15, the connecting member 57A includes a plurality of strip-shaped portions 571A and a plurality of connecting portions 572A. Each of the plurality of strip-shaped portions 571A is joined to each of the second electrodes 112 (sources) and pad portions 313a (power wiring portions 313) of the plurality of first semiconductor elements 11, similar to the plurality of connecting members 51A, thereby making them electrically conductive. Each of the plurality of strip-shaped portions 571A is a strip with the second direction y as its longitudinal direction in a plan view. Each of the plurality of strip-shaped portions 571A is partially bent, as shown in Figure 16. The plurality of connecting portions 572A are sandwiched between two adjacent strip-shaped portions 571A in the first direction x and connected to them. In the example shown in Figures 14 and 15, each connecting portion 572A is connected to the portion of the strip-shaped portion 571A that is interposed between the portion joined to the second electrode 112 and the portion joined to the pad portion 313a. Multiple strip-shaped portions 571A are electrically connected to each other via multiple connecting portions 572A.

[0082] As shown in Figures 14 and 15, the connecting member 57B includes a plurality of strip-shaped portions 571B and a plurality of connecting portions 572B. Each of the plurality of strip-shaped portions 571B, like the plurality of connecting members 51B, is joined to each of the fifth electrodes 212 (sources) and pad portions 312a (power wiring portions 312) of the plurality of second semiconductor elements 21, making them electrically connected. Each of the plurality of strip-shaped portions 571B is strip-shaped with the second direction y as the longitudinal direction in a plan view. Each of the plurality of strip-shaped portions 571B is partially bent, as shown in Figure 16. The plurality of connecting portions 572B are sandwiched between two adjacent strip-shaped portions 571B in the first direction x and are connected to them. The plurality of strip-shaped portions 571B are electrically connected to each other via the plurality of connecting portions 572B. In the examples shown in Figures 14 and 15, each strip-shaped portion 571B extends in both directions in the second direction y from the portion joined to the fifth electrode 212 in a plan view. Each connecting portion 572B is connected to the portion of the strip-shaped portion 571B that is opposite to the portion joined to the pad portion 312a. In this example, the dimension of each strip-shaped portion 571B along the second direction y from the portion joined to the fifth electrode 212 to the portion connected to the connecting portion 572B is smaller than the dimension along the second direction y from the portion joined to the fifth electrode 212 to the portion joined to the pad portion 312a.

[0083] The effects and benefits of semiconductor device B1 are as follows:

[0084] The semiconductor device B1, like the semiconductor device A1, also includes a first conductor and a second conductor. In the semiconductor device B1, the first conductor is the portion of the connecting member 57A that is interposed between the strip-shaped portion 571A connected to the second electrode 112 of one first semiconductor element 11, the strip-shaped portion 571A connected to the second electrode 112 of the other first semiconductor element 11, and the portion of the pad portion 313a (power wiring portion 313) where these strip-shaped portions 571A are joined. The second conductor is the portion of the connecting portion 572A and the portion of each of the two strip-shaped portions 571A connected to the connecting portion 572A that is from the second electrode 112 to the connecting portion 572A. In any two of the multiple first semiconductor elements 11, the two second electrodes 112 (sources) are conductive through the first conductive path passing through the first conductor and the second conductive path passing through the second conductor. In semiconductor device B1, as in semiconductor device A1, the first conduction path is the conduction path between the second electrodes 112 that are connected when the main current path is formed. The first conduction path and the second conduction path are in parallel, at least in part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. With this configuration, in semiconductor device B1, as in semiconductor device A1, the inductance between the second electrodes 112 (sources) of any two first semiconductor elements 11 is reduced by the second conduction path. Therefore, semiconductor device B1 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0085] In semiconductor device B1, the connecting member 57A includes a connecting portion 572A that connects to two adjacent strip-shaped portions 571A. Each connecting portion 572A is connected to the portion of each strip-shaped portion 571A that is joined to the second electrode 112 and the portion that is joined to the pad portion 313a. With this configuration, the length of the second conduction path can be made shorter than the length of the first conduction path in the conduction between the second electrodes 112 of the two first semiconductor elements 11. Furthermore, because the length of the second conduction path is shorter than the length of the first conduction path, the inductance of the second conduction path can be reduced compared to the inductance of the first conduction path in semiconductor device B1.

[0086] The semiconductor device B1, like the semiconductor device A1, also includes a third conductor and a fourth conductor. In the semiconductor device B1, the third conductor is the portion of the connecting member 57B that is interposed between the strip-shaped portion 571B connected to the fifth electrode 212 of one of the second semiconductor elements 21, the strip-shaped portion 571B connected to the fifth electrode 212 of the other second semiconductor element 21, and the portion of the pad portion 312a (power wiring portion 312) that is interposed between the portions where the two aforementioned strip-shaped portions 571B are joined. The fourth conductor is the portion of each of the connecting portion 572B and the two strip-shaped portions 571B connected to the connecting portion 572B, from the fifth electrode 212 to the portion connected to the connecting portion 572B. In any two of the multiple second semiconductor elements 21, the two fifth electrodes 212 (sources) are conductive through the third conductive path passing through the third conductor and the fourth conductive path passing through the fourth conductor. In semiconductor device B1, as in semiconductor device A1, the third conduction path is the conduction path between the fifth electrodes 212 that are connected when the main current path is formed. The third conduction path and the fourth conduction path are in parallel, at least in part, and the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. With this configuration, in semiconductor device B1, as in semiconductor device A1, the inductance between the fifth electrodes 212 (sources) of any two second semiconductor elements 21 is reduced by the fourth conduction path. Therefore, semiconductor device B1 can suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel.

[0087] In semiconductor device B1, the connecting member 57B includes a connecting portion 572B that connects to two adjacent strip-shaped portions 571B. In each strip-shaped portion 571B, the dimension along the second direction y from the portion joined to the fifth electrode 212 to the portion connected to the connecting portion 572B is smaller than the dimension along the second direction y from the portion joined to the fifth electrode 212 to the portion joined to the pad portion 312a. With this configuration, the length of the fourth conduction path can be made shorter than the length of the third conduction path in the conduction between the fifth electrodes 212 of the two second semiconductor elements 21. Furthermore, in semiconductor device B1, because the length of the fourth conduction path is shorter than the length of the third conduction path, the inductance of the fourth conduction path can be reduced compared to the inductance of the third conduction path.

[0088] Figure 17 shows a semiconductor device B2 according to the first modification of the second embodiment. Compared to semiconductor device B1, semiconductor device B2 has a different shape for the connecting member 57A.

[0089] The connecting member 57A of the semiconductor device B2 has each connecting portion 572A connected to the portion of each strip-shaped portion 571A that overlaps with each first semiconductor element 11 in a plan view (the portion bonded to the second electrode 112). With this configuration, the multiple first semiconductor elements 11 are arranged so that, in a plan view, the third electrode 113 is located on one side of the second direction y (the side where the signal wiring portion 321A is located). In a plan view, each third electrode 113 does not overlap with the connecting member 57A, enabling wire bonding to the third electrode 113.

[0090] The semiconductor device B2 exhibits the same effects as the semiconductor device B1. Furthermore, in the semiconductor device B2, the second conduction path, that is, the conduction path via the connecting portion 572A, is shorter than in the semiconductor device B1, so the inductance of the second conduction path is reduced compared to the semiconductor device B1. Therefore, the semiconductor device B2 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel more effectively than the semiconductor device B1.

[0091] Figures 18 to 21 show a semiconductor device B3 according to a second modification of the second embodiment. The semiconductor device B3 differs from the semiconductor device B1 in its module structure. The semiconductor device B1 has a case-type module structure in which a plurality of first semiconductor elements 11 and a plurality of second semiconductor elements 21 are housed in a case 61, while the semiconductor device B3 has a mold-type module structure in which a plurality of first semiconductor elements 11 and a plurality of second semiconductor elements 21 are covered by a sealing member 7.

[0092] As shown in Figures 18 to 21, the semiconductor device B3 comprises a plurality of first semiconductor elements 11, a plurality of second semiconductor elements 21, an insulating substrate 30, a pair of conductive substrates 33A, 33B, a pair of insulating layers 34A, 34B, a plurality of signal wiring sections 321A, 321B, 322A, 322B, 324, 329, a plurality of power terminals 41 to 43, a plurality of signal terminals 44A, 44B, 45A, 45B, 47, 48, a plurality of connecting members 531A, 531B, 541A, 541B, 56, a pair of connecting members 57A, 57B, and a sealing member 7. As can be understood from the configuration which will be described in detail later, the semiconductor device B3 comprises a conductive substrate 33A as an example of a "first wiring section" and a conductive substrate 33B as an example of a "second wiring section".

[0093] The sealing member 7 covers a plurality of first semiconductor elements 11 and a plurality of second semiconductor elements 21, etc. The sealing member 7 is made of, for example, a black epoxy resin. The sealing member 7 may be made of other insulating resins. The sealing member 7 is, for example, rectangular in plan view.

[0094] The sealing member 7 includes a resin main surface 71, a resin back surface 72, a pair of resin side surfaces 73, and a pair of resin side surfaces 74. The resin main surface 71 and the resin back surface 72 are spaced apart in the thickness direction z. The resin main surface 71 faces upward in the thickness direction z, and the resin back surface 72 faces downward in the thickness direction z. The pair of resin side surfaces 73 and the pair of resin side surfaces 74 are sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z, and are connected to them. The pair of resin side surfaces 73 are spaced apart in a first direction x and face opposite each other in the first direction x. The pair of resin side surfaces 74 are spaced apart in a second direction y and face opposite each other in the second direction y.

[0095] As shown in Figure 18, multiple signal terminals 44A, 44B, 45A, 45B, 47, and 48 protrude from the main resin surface 71. The back surface 30b of the insulating substrate 30 is exposed from the back surface 72 of the resin. The back surface 30b may be covered by the sealing member 7 without being exposed from the back surface 72 of the resin. As shown in Figures 18 and 20, a power terminal 41 and two power terminals 42 protrude from one of the pair of resin side surfaces 73, and two power terminals 43 protrude from the other of the pair of resin side surfaces 73.

[0096] A pair of conductive substrates 33A and 33B are each placed on an insulating substrate 30. Each pair of conductive substrates 33A and 33B is made of a metal. This metal is copper or a copper alloy, or aluminum or an aluminum alloy, etc.

[0097] The conductive substrate 33A has multiple first semiconductor elements 11 mounted on it. The conductive substrate 33A faces the back surface 11b of each of the multiple first semiconductor elements 11. The first electrodes 111 of each of the multiple first semiconductor elements 11 are electrically connected to the conductive substrate 33A. The first electrodes 111 of the multiple first semiconductor elements 11 are electrically connected via the conductive substrate 33A.

[0098] The conductive substrate 33B has multiple second semiconductor elements 21 mounted on it. The conductive substrate 33B faces the back surface 21b of each of the multiple second semiconductor elements 21. The conductive substrate 33B is electrically connected to the fourth electrodes 211 of each of the multiple second semiconductor elements 21. The fourth electrodes 211 of the multiple second semiconductor elements 21 are electrically connected via the conductive substrate 33B.

[0099] The insulating layer 34A is placed on the conductive substrate 33A. Multiple signal wiring sections 321A, 322A, and 329 are placed on the insulating layer 34A. The insulating layer 34A is made of, for example, ceramics.

[0100] The insulating layer 34B is placed on the conductive substrate 33B. Multiple signal wiring sections 321B, 322B, and 329 are placed on the insulating layer 34B. The insulating layer 34B is made of, for example, ceramics.

[0101] The multiple signal wiring sections 329 are arranged on either of the pair of insulating layers 34A or 34B. None of the multiple connecting members are joined to the multiple signal wiring sections 329, and they do not conduct electricity to any of the multiple first semiconductor elements 11 or the multiple second semiconductor elements 21.

[0102] The power terminal 41 is integrally formed with the conductive substrate 33A. The power terminal 41 has a smaller dimension in the thickness direction z than the conductive substrate 33A. The power terminal 41 extends from the conductive substrate 33A to one side in a first direction x. This one side in the first direction x is opposite to the side of the conductive substrate 33A where the conductive substrate 33B is located. The power terminal 41 is electrically connected to the first electrode 111 (drain) of a plurality of first semiconductor elements 11.

[0103] The two power terminals 42 are spaced apart from the conductive substrate 33A. In the second direction y, the two power terminals 42 are positioned on opposite sides of the power terminal 41. The two power terminals 42 are positioned on one side of the conductive substrate 33A in the first direction x. This side of the first direction x is the side of the conductive substrate 33A where the power terminal 41 is located. A connecting member 57B is joined to each of the two power terminals 42. Each of the two power terminals 42 is electrically connected to the fifth electrode 212 (source) of the plurality of second semiconductor elements 21.

[0104] Each of the two power terminals 43 is integrally formed with the conductive substrate 33B. Each of the two power terminals 43 has a smaller dimension in the thickness direction z than the conductive substrate 33B. Each of the two power terminals 43 extends from the conductive substrate 33B to the other side in the first direction x. This other side in the first direction x is the side opposite to the side of the conductive substrate 33B where the conductive substrate 33A is located. Each of the two power terminals 43 is electrically connected to the second electrode 112 (source) of the plurality of first semiconductor elements 11 and the fourth electrode 211 (drain) of the plurality of second semiconductor elements 21.

[0105] Signal terminal 44A is mounted on the signal wiring section 321A. Signal terminal 44A is electrically connected to the signal wiring section 321A. Signal terminal 44B is mounted on the signal wiring section 321B. Signal terminal 44B is electrically connected to the signal wiring section 321B. As shown in Figure 19, each pair of signal terminals 44A and 44B includes a holder 441 and a metal pin 442.

[0106] The holder 441 is made of a conductive material. The holder 441 for signal terminal 44A is joined to the signal wiring section 321A, and the holder 441 for signal terminal 44B is joined to the signal wiring section 321B. The holder 441 is cylindrical. The metal pin 442 is press-fitted into the holder 441 and extends in the thickness direction z. The metal pin 442 protrudes upward in the thickness direction z from the resin main surface 71 of the sealing member 7, and a portion of it is exposed from the sealing member 7.

[0107] Signal terminal 45A is mounted on the signal wiring section 322A. Signal terminal 45A is electrically connected to the signal wiring section 322A. Signal terminal 45B is mounted on the signal wiring section 322B. Signal terminal 45B is electrically connected to the signal wiring section 322B. As shown in Figure 19, each pair of signal terminals 45A and 45B includes a holder 451 and a metal pin 452. The holder 451 and metal pin 452 are configured similarly to the holder 441 and metal pin 442, respectively. The holder 451 of signal terminal 45A is connected to the signal wiring section 322A, and the holder 451 of signal terminal 45B is connected to the signal wiring section 322B.

[0108] The signal terminal 47 is erected on the signal wiring section 324. The signal terminal 47 is electrically connected to the signal wiring section 324. The signal wiring section 324 is electrically connected to the conductive substrate 33A via the connecting member 56. As shown in Figure 19, the signal terminal 47 includes a holder 471 and a metal pin 472. The holder 471 and the metal pin 472 are configured similarly to the holder 441 and the metal pin 442, respectively. The holder 471 is joined to the signal wiring section 324.

[0109] Multiple signal terminals 48 are erected on the signal wiring section 329. The multiple signal terminals 48 do not conduct to any of the multiple first semiconductor elements 11 or the multiple second semiconductor elements 21. Each of the multiple signal terminals 48 is a non-connected terminal.

[0110] In semiconductor device B3, similar to semiconductor device B1, in any two of the multiple first semiconductor elements 11, the two second electrodes 112 (sources) are electrically connected to each other via the first and second conduction paths, respectively. In semiconductor device B3, the first conductor is the portion of the connecting member 57A that is interposed between the strip-shaped portion 571A connected to the second electrode 112 of one first semiconductor element 11, the strip-shaped portion 571A connected to the second electrode 112 of the other first semiconductor element 11, and the portion of the conductive substrate 33B where these strip-shaped portions 571A are joined. The second conductor is the portion of the connecting portion 572A and the portion of each of the two strip-shaped portions 571A connected to the connecting portion 572A that extends from the second electrode 112 to the connecting portion 572A. Furthermore, the first conduction path and the second conduction path are in parallel, at least in part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. With this configuration, in semiconductor device B3, similar to semiconductor device B1, the inductance between the second electrodes 112 (sources) of any two first semiconductor elements 11 is reduced by the second conduction path. Therefore, semiconductor device B3 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0111] In semiconductor device B3, each connecting portion 572A is connected to the portion of each strip-shaped portion 571A that is joined to the second electrode 112 and the portion that is joined to the conductive substrate 33B. With this configuration, the length of the second conduction path can be made shorter than the length of the first conduction path in the conduction between the second electrodes 112 of the two first semiconductor elements 11. Furthermore, because the length of the second conduction path in semiconductor device B3 is shorter than the length of the first conduction path, the inductance of the second conduction path can be reduced compared to the inductance of the first conduction path.

[0112] Figures 22 to 25 show a semiconductor device C1 according to the third embodiment. The semiconductor device C1 differs from the semiconductor device A1 in the following respects. First, a plurality of first semiconductor elements 11 are covered by a resin member 12, constituting a first switching section 1. Second, a plurality of second semiconductor elements 21 are covered by a resin member 22, constituting a second switching section 2.

[0113] The first switching unit 1 is constructed by using rewiring technology to form multiple first semiconductor elements 11 in a single component. The first switching unit 1 has a main surface 10a and a back surface 10b. The main surface 10a and the back surface 10b are spaced apart in the thickness direction z. The main surface 10a faces one direction (upwards) in the thickness direction z. The back surface 10b faces the other direction (downwards) in the thickness direction z and faces the pad portion 311a (power wiring portion 311). The first switching unit 1 includes multiple first semiconductor elements 11, a resin member 12, a wiring layer 13, a main surface terminal portion 14, a back surface terminal portion 15, and multiple interlayer electrodes 161-164. As can be understood from the configuration which will be described in detail later, the semiconductor device C1 includes a resin member 12, a wiring layer 13, and a main surface terminal portion 14.

[0114] The resin member 12 covers a plurality of first semiconductor elements 11, a wiring layer 13, and a plurality of interlayer electrodes 161-164. The resin member 12 is made of, for example, an insulating resin material.

[0115] The wiring layer 13 is a strip-shaped structure that extends along the alignment direction (first direction x) of the multiple first semiconductor elements 11 in a plan view. In a plan view, the wiring layer 13 overlaps the multiple first semiconductor elements 11. However, as can be seen from Figure 25, the wiring layer 13 is formed to avoid the third electrode 113 in a plan view.

[0116] The main surface terminal portion 14 is located on the main surface 10a and is exposed from the resin member 12. The main surface terminal portion 14 includes a plurality of first pad portions 141 and a plurality of second pad portions 142. Each of the plurality of first pad portions 141 is electrically connected to each second electrode 112 (source) of a plurality of first semiconductor elements 11 via a wiring layer 13 and two interlayer electrodes 161, 162. The number of first pad portions 141 is, for example, the same as the number of first semiconductor elements 11 (second electrodes 112). Each of the plurality of second pad portions 142 is electrically connected to each third electrode 113 (gate) of a plurality of first semiconductor elements 11 via an interlayer electrode 163. The number of second pad portions 142 is, for example, the same as the number of first semiconductor elements 11 (third electrodes 113).

[0117] The rear terminal portion 15 is located on the rear surface 10b and is exposed from the resin member 12. The rear terminal portion 15 includes a plurality of pad portions 151. Each of the plurality of pad portions 151 is electrically connected to each first electrode 111 (drain) of the plurality of first semiconductor elements 11 via an interlayer electrode 164.

[0118] Each of the multiple interlayer electrodes 161 to 164 extends in the thickness direction z. Each of the multiple interlayer electrodes 161 connects each of the multiple second electrodes 112 of the multiple first semiconductor elements 11 to the wiring layer 13. Each of the multiple interlayer electrodes 162 connects each of the multiple wiring layer 13 to each of the multiple first pad portions 141. Each of the multiple interlayer electrodes 163 connects each of the multiple third electrodes 113 of the multiple first semiconductor elements 11 to each of the multiple second pad portions 142. Each of the multiple interlayer electrodes 164 connects each of the multiple first electrodes 111 of the multiple first semiconductor elements 11 to each of the multiple pad portions 151.

[0119] The second switching unit 2, like the first switching unit 1, is constructed by using rewiring technology to form multiple second semiconductor elements 21 in a single component. The second switching unit 2 has a main surface 20a and a back surface 20b. The main surface 20a and the back surface 20b are spaced apart in the thickness direction z. The main surface 20a faces one direction (upwards) in the thickness direction z. The back surface 20b faces the other direction (downwards) in the thickness direction z and faces the pad portion 313a (power wiring portion 313). The second switching unit 2 includes multiple second semiconductor elements 21, a resin member 22, a wiring layer 23, a main surface terminal portion 24, a back surface terminal portion 25, and multiple interlayer electrodes 261 to 264.

[0120] The resin member 22 covers a plurality of second semiconductor elements 21, a wiring layer 23, and a plurality of interlayer electrodes 261-264. The resin member 22 is made of, for example, an insulating resin material.

[0121] The wiring layer 23 is a strip-shaped structure that extends along the alignment direction (first direction x) of the multiple second semiconductor elements 21 in a plan view. In a plan view, the wiring layer 23 overlaps the second semiconductor elements 21. However, as can be seen from Figure 25, the wiring layer 23 is formed to avoid the sixth electrode 213 in a plan view.

[0122] The main surface terminal portion 24 is located on the main surface 20a and is exposed from the resin member 22. The main surface terminal portion 24 includes a plurality of first pad portions 241 and a plurality of second pad portions 242. Each of the plurality of first pad portions 241 is electrically connected to each fifth electrode 212 (source) of a plurality of second semiconductor elements 21 via a wiring layer 23 and two interlayer electrodes 261, 262. The number of first pad portions 241 is, for example, the same as the number of second semiconductor elements 21 (fifth electrodes 212). Each of the plurality of second pad portions 242 is electrically connected to each sixth electrode 213 (gate) of a plurality of second semiconductor elements 21 via an interlayer electrode 263. The number of second pad portions 242 is, for example, the same as the number of second semiconductor elements 21 (sixth electrodes 213).

[0123] The rear terminal portion 25 is located on the rear surface 20b and is exposed from the resin member 22. The rear terminal portion 25 includes a plurality of pad portions 251. Each of the plurality of pad portions 251 is electrically connected to the fourth electrode 211 (drain) of each of the plurality of second semiconductor elements 21 via the interlayer electrode 264.

[0124] Each of the multiple interlayer electrodes 261 to 264 extends in the thickness direction z. Each of the multiple interlayer electrodes 261 connects each of the fifth electrodes 212 of the multiple second semiconductor elements 21 to the wiring layer 23. Each of the multiple interlayer electrodes 262 connects each of the wiring layer 23 to each of the multiple first pad portions 241. Each of the multiple interlayer electrodes 263 connects each of the sixth electrodes 213 of the multiple second semiconductor elements 21 to each of the multiple second pad portions 242. Each of the multiple interlayer electrodes 264 connects each of the fourth electrodes 211 of the multiple second semiconductor elements 21 to each of the multiple pad portions 251.

[0125] The effects of semiconductor device C1 are as follows:

[0126] The semiconductor device C1 also includes a first conductor and a second conductor, similar to semiconductor devices A1 and B1. In semiconductor device C1, the first conductor consists of the portion from the second electrode 112 of one first semiconductor element 11 to the first pad portion 141 on the second electrode 112 (the two interlayer electrodes 161, 162 and a part of the wiring layer 13), a connecting member 51A joined to the first pad portion 141, the portion from the second electrode 112 of the other first semiconductor element 11 to the first pad portion 141 on the second electrode 112 (the two interlayer electrodes 161, 162 and a part of the wiring layer 13), a connecting member 51A joined to the first pad portion 141, and the portion of the pad portion 313a (power wiring portion 313) interposed between the portions to which each of the aforementioned connecting members 51A is joined. The second conductor is the interlayer electrode 161 in contact with the second electrode 112 of one first semiconductor element 11, the interlayer electrode 161 in contact with the second electrode 112 of the other first semiconductor element 11, and the portion of the wiring layer 13 interposed between the aforementioned interlayer electrodes 161. In any two of the multiple first semiconductor elements 11, the two second electrodes 112 (sources) conduct through the first conduction path through the first conductor and the second conduction path through the second conductor. In semiconductor device C1, as in semiconductor devices A1 and B1, the first conduction path is the conduction path between the second electrodes 112 that are connected when the main current path is formed. The first conduction path and the second conduction path are in parallel in at least part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. In this configuration, similar to semiconductor device A1, the inductance between the second electrodes 112 (sources) of any two first semiconductor elements 11 is reduced by the second conduction path in semiconductor device C1. Therefore, semiconductor device C1 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0127] In the semiconductor device C1, the first switching unit 1 includes a wiring layer 13. The wiring layer 13 connects the second electrodes 112 of each of the multiple first semiconductor elements 11 inside the resin member 12. With this configuration, the length of the second conduction path between the second electrodes 112 of two first semiconductor elements 11 can be made shorter than the length of the first conduction path. Furthermore, because the length of the second conduction path is shorter than the length of the first conduction path, the inductance of the second conduction path can be reduced compared to the inductance of the first conduction path in the semiconductor device C1.

[0128] In semiconductor device C1, as in semiconductor devices A1 and B1, a third conductor and a fourth conductor are also provided. In semiconductor device C1, the third conductor is the portion from the fifth electrode 212 of one second semiconductor element 21 to the first pad portion 241 on the fifth electrode 212 (the two interlayer electrodes 261, 262 and a part of the wiring layer 23), a connecting member 51B joined to the first pad portion 241, the portion from the fifth electrode 212 of the other second semiconductor element 21 to the first pad portion 241 on the fifth electrode 212 (the two interlayer electrodes 261, 262 and a part of the wiring layer 23), a connecting member 51B joined to the first pad portion 241, and a portion of the pad portion 312a (power wiring portion 312) interposed between the portions to which each of the aforementioned connecting members 51B is joined. The fourth conductor is the interlayer electrode 261 in contact with the fifth electrode 212 of one second semiconductor element 21, the interlayer electrode 261 in contact with the fifth electrode 212 of the other second semiconductor element 21, and the portion of the wiring layer 23 that is in contact with each of the aforementioned interlayer electrodes 261. In any two of the multiple second semiconductor elements 21, the two fifth electrodes 212 (sources) conduct through the third conduction path through the third conductor and the fourth conduction path through the fourth conductor. In semiconductor device C1, as in semiconductor devices A1 and B1, the third conduction path is the conduction path between the fifth electrodes 212 that are connected when the main current path is formed. The third conduction path and the fourth conduction path are in parallel in at least part, and the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. In this configuration, similar to semiconductor device A1, the inductance between the fifth electrode 212 (source) of any two second semiconductor elements 21 in semiconductor device C1 is reduced by the fourth conduction path. Therefore, semiconductor device C1 can suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel.

[0129] In the semiconductor device C1, the second switching unit 2 includes a wiring layer 23. The wiring layer 23 provides electrical conductivity between each of the fifth electrodes 212 of a plurality of second semiconductor elements 21 within the resin member 22. With this configuration, the length of the fourth conductivity path can be made shorter than the length of the third conductivity path in the conductivity between the fifth electrodes 212 of two second semiconductor elements 21. Furthermore, because the length of the fourth conductivity path is shorter than the length of the third conductivity path, the inductance of the fourth conductivity path can be reduced compared to the inductance of the third conductivity path in the semiconductor device C1.

[0130] Figures 26 to 28 show a semiconductor device C2 according to a modified example of the third embodiment. The semiconductor device C2 has a different module structure compared to the semiconductor device C1.

[0131] As shown in Figures 26 to 28, the semiconductor device C2 comprises a first switching unit 1, a second switching unit 2, an insulating substrate 30, a pair of conductive substrates 33A, 33B, a pair of insulating layers 34A, 34B, a plurality of signal wiring units 321A, 321B, 322A, 322B, a plurality of power terminals 41 to 43, a plurality of signal terminals 44A, 44B, 45A, 45B, 48, a plurality of connecting members 531A, 531B, 532A, 532B, 541A, 541B, 542A, 542B, and a sealing member 7. As can be understood from the configuration which will be described in detail later, the semiconductor device C2 comprises a conductive substrate 33A as an example of a "first wiring unit" and a conductive substrate 33B as an example of a "second wiring unit".

[0132] In the semiconductor device C2, the first switching unit 1 is mounted on a conductive substrate 33A, as shown in Figure 27. The back surface 10b faces the conductive substrate 33A. The back surface terminal portion 15 (multiple pad portions 151) of the first switching unit 1 is joined to the conductive substrate 33A, and is electrically connected to each first electrode 111 of the multiple first semiconductor elements 11. The first electrodes 111 of the multiple first semiconductor elements 11 are electrically connected via the conductive substrate 33A.

[0133] In the semiconductor device C2, the second switching unit 2 is mounted on a conductive substrate 33B, as shown in Figure 27. The back surface 20b faces the conductive substrate 33B. The back surface terminal portion 25 (multiple pad portions 251) of the second switching unit 2 is joined to the conductive substrate 33B, and is electrically connected to each of the fourth electrodes 211 of the multiple second semiconductor elements 21. The fourth electrodes 211 of the multiple second semiconductor elements 21 are electrically connected via the conductive substrate 33B.

[0134] In the semiconductor device C2, the multiple connecting members 51A and 51B are each metal plate-shaped members, as can be seen from Figure 27. Each connecting member 51A is joined to each first pad portion 141 and the conductive substrate 33B, as shown in Figure 27. Each connecting member 51B is joined to each first pad portion 241 and a part of the power terminal 42 (each of the comb-shaped portions), as shown in Figure 27.

[0135] Power terminal 41 is joined to the conductive substrate 33A and is electrically connected to the first electrodes 111 of the multiple first semiconductor elements 11. Power terminal 42 is stacked on power terminal 41 with an insulating plate 49 in between, as shown in Figure 28. Power terminal 42 is electrically connected to the fifth electrodes 212 of the multiple second semiconductor elements 21 via each connecting member 51B. Power terminal 43 is joined to the conductive substrate 33B and is electrically connected to the fourth electrodes 211 of the multiple second semiconductor elements 21. Power terminal 43 is also electrically connected to the second electrodes 112 of the multiple first semiconductor elements 11 via the conductive substrate 33B and each connecting member 51A.

[0136] Similar to semiconductor device C1, in semiconductor device C2, in any two of the multiple first semiconductor elements 11, the two second electrodes 112 (sources) conduct through the first conduction path and the second conduction path, respectively. In semiconductor device C2, the first conductor includes a part of the conductive substrate 33B instead of a part of the pad portion 313a. The first conduction path and the second conduction path are in parallel for at least a portion of their respective parts, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. With this configuration, in semiconductor device C2, similar to semiconductor device C1, the inductance between the second electrodes 112 (sources) in any two of the first semiconductor elements 11 is reduced by the second conduction path. Therefore, semiconductor device C2 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0137] In semiconductor device C2, similar to semiconductor device C1, in any two of the multiple second semiconductor elements 21, the two fifth electrodes 212 (sources) conduct through the third conduction path and the fourth conduction path, respectively. In semiconductor device C2, the third conductor includes a part of the power terminal 42 instead of a part of the pad portion 312a. The third conduction path and the fourth conduction path are in parallel, at least in part, and the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. With this configuration, in semiconductor device C2, similar to semiconductor device C1, the inductance between the fifth electrodes 212 (sources) in any two of the second semiconductor elements 21 is reduced by the fourth conduction path. Therefore, semiconductor device C2 can suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel.

[0138] In each semiconductor device C1, C2, the first switching unit 1 may have a configuration as shown in Figures 29 to 31, for example. Figures 29 to 31 show an example of a first switching unit 1 including, for example, four first semiconductor elements 11. In the example shown in Figures 29 to 31, the main surface terminal portion 14 of the first switching unit 1 includes one first pad portion 141 instead of multiple first pad portions 141. The first pad portion 141 is formed on the surface (upper surface in the thickness direction z) of the wiring layer 13 connected to each of the second electrodes 112 of the multiple first semiconductor elements 11, as shown in Figure 30. Also, in the example shown in Figures 29 to 31, the back surface terminal portion 15 of the first switching unit 1 includes one pad portion 151 instead of multiple pad portions 151. The pad portion 151 is formed on the surface (lower surface in the thickness direction z) of the wiring layer 13 connected to each of the first electrodes 111 of the multiple first semiconductor elements 11, as shown in Figure 30. Furthermore, the rear terminal portion 15 may not consist of a single pad portion 151, but may consist of multiple pad portions 151, similar to the semiconductor devices C1 and C2. Even with such a configuration for the first switching unit 1, multiple second electrodes 112 conduct to each other via the wiring layer 13, thereby forming a conductive path through the second conductor. This configuration is applicable not only to the first switching unit 1 but also to the second switching unit 2.

[0139] Figure 32 shows a semiconductor device D1 according to the fourth embodiment. As shown in the figure, the semiconductor device D1 differs from the semiconductor device A1 mainly in the plan view shape of each power wiring section 311 to 313.

[0140] The power wiring section 312 of semiconductor device D1 differs from the power wiring section 312 of semiconductor device A1 in that it further includes a plurality of protrusions 312c. Furthermore, the power wiring section 313 of semiconductor device D1 differs from the power wiring section 313 of semiconductor device A1 in that it further includes a plurality of protrusions 313c.

[0141] Each of the multiple protrusions 312c extends from each of the pad portions 312a to one side in the second direction y (the side where the multiple second semiconductor elements 21 are located). Each of the multiple protrusions 312c is positioned between two adjacent second semiconductor elements 21 in the first direction x when viewed from above. Two connecting members 52B are joined to each of the multiple protrusions 312c. These connecting members 52B are joined to the fifth electrodes 212 of each second semiconductor element 21 located on either side of the first direction x when viewed from above.

[0142] Each of the multiple protrusions 313c extends from each of the pad portions 313a to one side in the second direction y (the side where the multiple first semiconductor elements 11 are located). Each of the multiple protrusions 313c is positioned between two adjacent first semiconductor elements 11 in the first direction x when viewed from above. Two connecting members 52A are joined to each of the multiple protrusions 313c. These connecting members 52A are joined to the second electrodes 112 of each first semiconductor element 11 located on either side of the first direction x when viewed from above.

[0143] The effects of semiconductor device D1 are as follows:

[0144] The semiconductor device D1, like semiconductor devices A1, B1, and C1, also includes a first conductor and a third conductor. In the semiconductor device D1, the first conductor, like semiconductor device A1, consists of a connecting member 51A joined to the second electrode 112 of one first semiconductor element 11, a connecting member 51A joined to the second electrode 112 of the other first semiconductor element 11, and a portion of the pad portion 313a (power wiring portion 313) interposed between the respective joined connecting members 51A. The second conductor consists of a protrusion 313c positioned between the two first semiconductor elements 11 and two connecting members 52A joined to the protrusion 313c. In any two first semiconductor elements 11 adjacent to each other in the first direction x, the two second electrodes 112 conduct through a first conduction path through the first conductor and a second conduction path through the second conductor, respectively. In semiconductor device D1, as with semiconductor devices A1, B1, and C1, the first conduction path is the conduction path between the second electrodes 112 that are connected when the main current path is formed. The first conduction path and the second conduction path are in parallel, at least in part, and the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. With this configuration, in semiconductor device D1, as with semiconductor device A1, the inductance between the second electrodes 112 (sources) of any two first semiconductor elements 11 adjacent in the first direction x is reduced by the second conduction path. Therefore, semiconductor device D1 can suppress the occurrence of resonance phenomena when multiple first semiconductor elements 11 are operated in parallel.

[0145] In the semiconductor device D1, the power wiring section 313 includes a protruding portion 313c that extends from the pad section 313a and is positioned between two adjacent first semiconductor elements 11 in the first direction x. Each connecting member 52A, which is joined to the second electrode 112 of the two first semiconductor elements 11, is joined to the protruding portion 313c. With this configuration, the length of the second conduction path can be made shorter than the length of the first conduction path in the conduction between the second electrode 112 of two adjacent first semiconductor elements 11 in the first direction x. Furthermore, because the length of the second conduction path is shorter than the length of the first conduction path, the inductance of the second conduction path can be reduced compared to the inductance of the first conduction path in the semiconductor device D1.

[0146] In semiconductor device D1, a protrusion 313c is positioned between two first semiconductor elements 11 adjacent to each other in the first direction x. For example, in semiconductor device A1, the first electrodes 111 of two first semiconductor elements 11 adjacent to each other in the first direction x are conductive through a linear path connecting these first electrodes 111 at the pad portion 311a. However, in semiconductor device D1, the first electrodes 111 of two first semiconductor elements 11 adjacent to each other in the first direction x are conductive through a path avoiding the protrusion 313c at the pad portion 311a. In other words, in semiconductor device D1, the protrusion 313c is positioned to obstruct the conductive path that linearly connects two first electrodes 111 adjacent to each other in the first direction x. As a result, the conductive path between the first electrodes 111 is extended compared to semiconductor device A1. Consequently, the inductance between the first electrodes 111 in semiconductor device D1 is increased compared to semiconductor device A1. In the present inventor's research, it was found that the greater the inductance of the conduction path between the first electrodes 111 of each first semiconductor element 11, the more the resonance phenomenon is suppressed. Therefore, semiconductor device D1 can further suppress the occurrence of resonance when multiple first semiconductor elements 11 are operated in parallel compared to semiconductor device A1.

[0147] The semiconductor device D1, like semiconductor devices A1, B1, and C1, also includes a third conductor and a fourth conductor. In semiconductor device D1, the third conductor, like semiconductor device A1, consists of a connecting member 51B joined to the fifth electrode 212 of one second semiconductor element 21, a connecting member 51B joined to the fifth electrode 212 of the other second semiconductor element 21, and a portion of the pad portion 312a (power wiring portion 312) interposed between the respective joined connecting members 51B. The fourth conductor consists of a protrusion 312c positioned between the two second semiconductor elements 21 and two connecting members 52B joined to the protrusion 312c. In any two second semiconductor elements 21 adjacent to each other in the first direction x, the two fifth electrodes 212 are electrically connected through a third conductive path passing through the third conductor and a fourth conductive path passing through the fourth conductor. In semiconductor device D1, as with semiconductor devices A1, B1, and C1, the third conduction path is the conduction path between the fifth electrodes 212 that are connected when the main current path is formed. The third conduction path and the fourth conduction path are in parallel, at least in part, and the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. With this configuration, in semiconductor device D1, as with semiconductor device A1, the inductance between the fifth electrodes 212 (sources) of any two second semiconductor elements 21 adjacent in the first direction x is reduced by the fourth conduction path. Therefore, semiconductor device D1 can suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel.

[0148] In the semiconductor device D1, the power wiring section 312 includes a protruding portion 312c that extends from the pad section 312a and is positioned between two adjacent second semiconductor elements 21 in the first direction x. Each connecting member 52B, which is joined to the fifth electrode 212 of the two second semiconductor elements 21, is joined to the protruding portion 312c. With this configuration, the length of the fourth conduction path can be made shorter than the length of the third conduction path for any two second semiconductor elements 21 adjacent in the first direction x. Furthermore, because the length of the fourth conduction path is shorter than the length of the third conduction path, the inductance of the fourth conduction path can be reduced compared to the inductance of the third conduction path in the semiconductor device D1.

[0149] In semiconductor device D1, a protrusion 312c is positioned between two second semiconductor elements 21 adjacent to each other in the first direction x. For example, in semiconductor device A1, the fourth electrodes 211 of two second semiconductor elements 21 adjacent to each other in the first direction x conduct electricity through a linear path connecting these fourth electrodes 211 at the pad portion 313a. However, in semiconductor device D1, the fourth electrodes 211 of two second semiconductor elements 21 adjacent to each other in the first direction x conduct electricity through a path avoiding the protrusion 312c at the pad portion 313a. In other words, in semiconductor device D1, the protrusion 312c is positioned to obstruct the linear conduction path connecting two fourth electrodes 211 adjacent to each other in the first direction x, thus extending the conduction path between the fourth electrodes 211 compared to semiconductor device A1. As a result, the inductance between the fourth electrodes 211 in semiconductor device D1 is increased compared to semiconductor device A1. Therefore, semiconductor device D1 can further suppress the occurrence of resonance phenomena when multiple second semiconductor elements 21 are operated in parallel, compared to semiconductor device A1.

[0150] The semiconductor devices relating to this disclosure are not limited to the embodiments described above. The specific configurations of the parts of the semiconductor devices relating to this disclosure can be modified in various ways. For example, this disclosure includes the embodiments described in the following appendix. Note 1. Two first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, whose switching operation is controlled according to a first drive signal input to the third electrode, A first conductor electrically connects the second electrodes of each of the two first semiconductor elements, A second conductor electrically connects the two second electrodes of each of the two first semiconductor elements, A first power terminal electrically connected to the first conductor and conducting to the second electrode of each of the two first semiconductor elements, It is equipped with, The two first semiconductor elements are electrically connected in parallel. Between the second electrodes of each of the two first semiconductor elements, there is a first conduction path through the first conductor and a second conduction path through the second conductor. The first conductive path and the second conductive path are in a parallel relationship, at least in part. A semiconductor device wherein the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path. Note 2. The semiconductor device described in Appendix 1, wherein the inductance of the second conduction path is smaller than the inductance of the first conduction path. Note 3. The semiconductor device described in either Appendix 1 or Appendix 2, wherein the second conduction path is shorter than the first conduction path. Note 4. A first wiring section and a second wiring section that are spaced apart from each other, A first connecting member that conducts to the second electrode of each of the two first semiconductor elements, It also has the following features: The first wiring section is electrically connected to the first electrode of each of the two first semiconductor elements. The second wiring section is joined to the first connecting member and is electrically connected to the second electrode of each of the two first semiconductor elements via the first connecting member. The semiconductor device according to any one of Appendix 1 to Appendix 3, wherein the first conductor includes a part of the first connecting member and a part of the second wiring portion. Note 5. Each of the two first semiconductor elements has a first element main surface and a first element back surface that are spaced apart from each other in the thickness direction of the first semiconductor element. The semiconductor device according to Appendix 4, wherein in each of the two first semiconductor elements, the first electrode is located on the back surface of the first element, and the second electrode and the third electrode are located on the main surface of the first element. Note 6. The semiconductor device described in Appendix 5, wherein each of the two first semiconductor elements has its back surface facing the first wiring portion and is mounted on the first wiring portion. Note 7. The second conductor includes a second connecting member, The semiconductor device according to Appendix 6, wherein the second connecting member is bonded to the second electrode of each of the two first semiconductor elements. Note 8. The semiconductor device described in Appendix 7, wherein the second connecting member is a bonding wire. Note 9. The first connecting member includes two strip-shaped portions spaced apart from each other, and a connecting portion sandwiched between the two strip-shaped portions and connected to the two strip-shaped portions. One of the two strip-shaped portions is joined to the second electrode of one of the two first semiconductor elements and to the second wiring portion. The other of the two strip-shaped portions is joined to the second electrode of the other of the two first semiconductor elements and to the second wiring portion. The first conductor includes a portion interposed between the two strip-shaped portions and the portion of the second wiring portion where each of the two strip-shaped portions is joined, The semiconductor device according to Appendix 6, wherein the second conductor includes the connecting portion and the portion of each of the two strip-shaped portions from the portion joined to the second electrode to the portion connected to the connecting portion. Note 10. The semiconductor device described in Appendix 9, wherein the connecting portion is connected to the portion of each of the two strip-shaped portions that overlaps with each of the two first semiconductor elements when viewed in the thickness direction. Note 11. A resin member covering at least a portion of each of the two first semiconductor elements, A wiring layer is provided above the main surface of each of the two first semiconductor elements and is covered by the resin member, A terminal portion exposed from the resin member and to which the first connecting member is joined, Furthermore, The terminal portion is electrically connected to the second electrode of each of the two first semiconductor elements. The semiconductor device according to Appendix 6, wherein the wiring layer is electrically connected to the second electrode of each of the two first semiconductor elements and overlaps the second electrode of each of the two first semiconductor elements when viewed in the thickness direction. Note 12. The terminal portion includes two pad portions that are spaced apart from each other and to which the first connecting member is joined. One of the two pad portions overlaps the second electrode of one of the two first semiconductor elements when viewed in the thickness direction. The semiconductor device as described in Appendix 11, wherein the other of the two pad portions overlaps the second electrode of the other of the two first semiconductor elements when viewed in the thickness direction. Note 13. Two second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, whose switching operation is controlled according to a second drive signal input to the sixth electrode, A third conductor electrically connects the fifth electrodes of each of the two second semiconductor elements, A fourth conductor electrically connects the fifth electrodes of each of the two second semiconductor elements, A second power terminal electrically connected to the third conductor and conducting to the fifth electrode of each of the two second semiconductor elements, It also has the following features: The two second semiconductor elements are electrically connected in parallel. Between the fifth electrodes of the two second semiconductor elements, there is a third conductive path passing through the third conductor and a fourth conductive path passing through the fourth conductor. The third conduction path and the fourth conduction path are in a parallel relationship, at least in part. The semiconductor device according to any one of the appendices 6 to 12, wherein the combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. Note 14. The semiconductor device described in Appendix 13, wherein the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. Note 15. The semiconductor device described in either Appendix 13 or Appendix 14, wherein the fourth conductive path is shorter than the third conductive path. Note 16. A third wiring section spaced apart from each of the first and second wiring sections, A third connecting member that conducts to the fifth electrode of each of the two second semiconductor elements, It also has the following features: The second wiring section is electrically connected to the fourth electrode of each of the two second semiconductor elements. The third wiring section is joined to the third connecting member and is electrically connected to the fifth electrode of each of the two second semiconductor elements via the third connecting member. The semiconductor device according to any one of Appendix 13 to Appendix 15, wherein the third conductor includes a part of the third connecting member and a part of the third wiring portion. Note 17. The device further comprises a third power terminal connected to the first wiring section, The second power terminal and the third power terminal are DC voltage input terminals, The DC voltage is converted into an AC voltage by the switching operations of the two first semiconductor elements and the two second semiconductor elements. The semiconductor device described in Appendix 16, wherein the first power terminal is the output terminal for the AC voltage. Note 18. Each of the two second semiconductor elements is a MOSFET, The fourth electrode is a drain, The fifth electrode is the source, The semiconductor device according to any one of appendices 13 to 17, wherein the sixth electrode is a gate. Note 19. Each of the two first semiconductor elements is a MOSFET, The first electrode is a drain, The second electrode is the source, The semiconductor device according to any one of the appendices 1 to 18, wherein the third electrode is a gate. [Explanation of symbols]

[0151] A1, B1, B2, B3, C1, C2, D1: Semiconductor equipment 1: First switching section 10a: Main surface 10b: Back surface 11: First semiconductor element 11a: Main surface of the first element 11b: Back surface of the first element 111: 1st electrode 112: 2nd electrode 113: Third electrode 12: Resin component 13: Wiring layer 14: Main surface terminal section 141: First pad section 142: Second pad section 15: Rear terminal section 151: Pad section 161-164: Interlayer electrodes 2: Second switching section 20a: Main surface 20b: Reverse side 21: Second semiconductor element 21a: Main surface of the second element 21b: Back surface of the second element 211: Fourth electrode 212: 5th electrode 213: 6th electrode 22: Resin component 23: Wiring layer 24: Main terminal section 241: First pad section 242: Second pad section 25: Rear terminal section 251: Pad section 261~264: Interlayer electrodes 30: Insulating substrate 30a: Main surface 30b: Back side 311: Power wiring section 311a: Pad section 311b: Pad section 311c: Extension part 312: Power wiring part 312a: Pad section 312b: Pad section 312c: Protrusion 312s: Slit 313: Power wiring section 313a: Pad section 313b: Pad portion 313c: Protruding portion 321A, 321B: Signal wiring section 322A, 322B: Signal wiring section 323: Signal wiring section 324: Signal wiring section 329: Signal wiring section 33A, 33B: Conductive substrate 34A, 34B: Insulating layer 41, 42, 43: Power terminals 44A, 44B, 45A, 45B, 46, 47, 48: Signal terminals 441,451,471: Holder 442,452,472: Metal pins 49: Insulating board 51A, 51B: Connecting members 52A, 52B: Connecting members 531A, 531B: Connecting members 532A, 532B: Connecting members 541A, 541B: Connecting members 542A, 542B: Connecting members 55: Connecting members 56: Connecting member 57A, 57B: Connecting member 571A, 571B: Strip-shaped section; 572A, 572B: Connecting section 60: Heat sink 61: Case 62: Frame 63: Top panel 641~644: Terminal block 65: Resin component 7: Sealing component 71: Main resin surface 72: Back surface of resin 73, 74: Resin side surface 91: Thermistor

Claims

1. A plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, whose switching operation is controlled according to a first drive signal input to the third electrode, A first wiring section in which the first electrodes of each of the plurality of first semiconductor elements are electrically connected, A second wiring section to which a first connecting member is joined, which conducts to the second electrode of each of the plurality of first semiconductor elements, A sealing member covering the plurality of first semiconductor elements, It is equipped with, The plurality of first semiconductor elements are arranged along a first direction and electrically connected in parallel. In any two adjacent first semiconductor elements in the first direction, the two second electrodes are conductive through the first conductive path passing through the first conductor and the second conductive path passing through the second conductor, respectively. The first conductor includes at least a portion of the first connecting member joined to the second electrode of one of the first semiconductor elements, at least a portion of the first connecting member joined to the second electrode of the other first semiconductor element, and a portion of the second wiring portion interposed between the portions to which each of the first connecting members is joined. The second conductor includes a second connecting member that is directly joined to the second electrodes of two adjacent first semiconductor elements in the first direction. The first conductive path and the second conductive path are in a parallel relationship, at least in part. A semiconductor device wherein the combined inductance of the inductance of the first conduction path and the inductance of the second conduction path is smaller than the inductance of the first conduction path.

2. The semiconductor device according to claim 1, wherein the first connecting member is a metal plate-shaped member, and the first connecting member connects at least two or more of the plurality of first semiconductor elements to the second electrodes and the second wiring portion.

3. The semiconductor device according to claim 1, wherein the second connecting member is a bonding wire.

4. The semiconductor device according to claim 1, wherein the inductance of the second conduction path is smaller than the inductance of the first conduction path.

5. The semiconductor device according to claim 1, wherein the second conduction path is shorter than the first conduction path.

6. A plurality of second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, whose switching operation is controlled according to a second drive signal input to the sixth electrode, A third connecting member is joined to the fifth electrode of each of the plurality of second semiconductor elements, and the third wiring portion is spaced apart from each of the first and second wiring portions, Furthermore, The second wiring section is electrically connected to the fourth electrode of each of the plurality of second semiconductor elements. The plurality of second semiconductor elements are arranged along the first direction, covered by the sealing member, and electrically connected in parallel. In any two adjacent second semiconductor elements in the first direction, the two fifth electrodes are conductive through the third conductive path passing through the third conductor and the fourth conductive path passing through the fourth conductor, respectively. The third conductor includes at least a portion of the third connecting member joined to the fifth electrode of one of the second semiconductor elements, at least a portion of the third connecting member joined to the fifth electrode of the other second semiconductor element, and a portion of the third wiring portion interposed between the portions to which each of the third connecting members is joined. The fourth conductor includes a fourth connecting member that is directly joined to the fifth electrodes of two adjacent second semiconductor elements in the first direction. The third conductive path and the fourth conductive path are in a parallel relationship, at least in part. The combined inductance of the inductance of the third conduction path and the inductance of the fourth conduction path is smaller than the inductance of the third conduction path. The third connecting member is a metal plate-shaped member, and the third connecting member connects at least two of the plurality of second semiconductor elements to the third wiring portion. The semiconductor device according to any one of claims 1 to 5, wherein the fourth connecting member is a bonding wire.

7. The semiconductor device according to claim 6, wherein the inductance of the fourth conduction path is smaller than the inductance of the third conduction path.

8. The semiconductor device according to claim 6, wherein the fourth conduction path is shorter than the third conduction path.

9. The first wiring section is a first conductive substrate, The semiconductor device according to claim 6, wherein the second wiring portion is a second conductive substrate.

10. Further equipped with an insulating substrate, The semiconductor device according to claim 9, wherein the first conductive substrate and the second conductive substrate are arranged on the main surface of the insulating substrate.

11. A first power terminal is connected to the first wiring section and protrudes from the sealing member, The second power terminal is connected to the second wiring section and protrudes from the sealing member, A third power terminal is joined to the third wiring section and protrudes from the sealing member, Furthermore, The first power terminal and the third power terminal protrude from the first resin side surface of the sealing member. The semiconductor device according to claim 9, wherein the second power terminal protrudes from the second resin side surface of the sealing member.

12. The semiconductor device according to claim 10, wherein the sealing member includes a resin main surface and a resin back surface on which the back surface of the insulating substrate is exposed, and is made of a resin material.

13. A first insulating layer disposed on the first conductive substrate, A second insulating layer disposed on the second conductive substrate, A plurality of signal wiring sections arranged on at least one of the first insulating layer and the second insulating layer, The semiconductor device according to claim 12, further comprising: a plurality of signal terminals erected on the plurality of signal wiring portions and protruding from the resin main surface of the sealing member.

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